Elastic wave device, filter, and multiplexer
By optimizing the ratio of the temperature coefficient adjustment layer and the mass compensation layer in the interdigital transducer, and combining it with a multilayer substrate structure, the frequency temperature coefficient problem of the elastic wave device was solved, achieving frequency stability and performance improvement.
Patent Information
- Application Number
- CN202510970883.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-15
- Publication Date
- 2025-10-28
AI Technical Summary
Existing elastic wave devices have problems with the temperature coefficient of frequency (TCF), which causes frequency drift, affects filter selectivity and insertion loss, and performance degrades especially when temperature changes.
By optimizing the thickness and density ratio of the temperature coefficient adjustment layer and the mass compensation layer in the interdigital transducer, ensuring that 112/574≤h1ρ1/(h1ρ1+h2ρ2)≤64/109, and combining the material of the piezoelectric layer and the structure of the supporting substrate, a multilayer substrate is formed to adjust the frequency temperature coefficient.
It effectively reduces the impact of ambient temperature changes on elastic wave devices, keeps the TCF difference between the resonant frequency and the anti-resonant frequency within a small range, and improves the performance stability of filters and multiplexers.