Infrared full-wave-band uninterrupted irradiation equipment and control method thereof
By combining microcrystalline plate and mica plate components with processor and thyristor control, uninterrupted infrared irradiation across the entire wavelength range is achieved, solving the problem that existing equipment cannot achieve full-wavelength control and improving the therapeutic effect.
Patent Information
- Application Number
- CN202511187492.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-25
- Publication Date
- 2025-10-31
AI Technical Summary
Existing infrared irradiation equipment cannot achieve full-band control of infrared radiation, resulting in poor therapeutic effects. Furthermore, conventional heating plates can only produce far-infrared radiation and cannot produce near-mid-infrared radiation.
By employing microcrystalline plate heating elements and mica plate heating elements, combined with a processor and a thyristor, the output power of infrared rays is controlled through an optocoupler to achieve uninterrupted irradiation across the entire wavelength range.
It achieves uninterrupted irradiation across the entire infrared spectrum, resulting in a true therapeutic effect, and is suitable for various scenarios such as light wave rooms and saunas.
Smart Images
Figure CN120860495A_ABST
Abstract
Description
[Technical Field]
[0001] This invention relates to an infrared full-band uninterrupted irradiation device and its control method. [Background Technology]
[0002] Existing infrared irradiation equipment used in infrared therapy typically employs relays for intermittent temperature control. This control method stops the infrared generator when the set temperature is reached, resulting in no infrared radiation being generated for a relatively long period, thus failing to achieve the desired therapeutic effect. Furthermore, the industry standard for infrared therapy heating plates uses mica, carbon crystal, or graphene plates, all of which can only produce far-infrared radiation and cannot generate near-infrared or mid-infrared radiation. Moreover, they lack control over the infrared wavelength, leaving the therapy merely a warming effect and failing to achieve the true therapeutic benefits of infrared therapy. [Summary of the Invention]
[0003] This invention overcomes the shortcomings of the prior art and provides an infrared full-band uninterrupted irradiation device and its control method.
[0004] To achieve the above objectives, the present invention adopts the following technical solution:
[0005] An infrared full-band uninterrupted irradiation device is characterized by comprising at least one microcrystalline plate heating component for emitting near-, mid-, and far-band infrared rays, at least one mica plate heating component for emitting mid- and far-infrared rays, and a control component for controlling the operation of the microcrystalline plate heating component and the mica plate heating component respectively. The control component includes a processor and multiple thyristors. The processor is connected to multiple optocouplers, and each optocoupler is connected to a control terminal of a thyristor to control the conduction angle of the thyristor. The input terminal of the thyristor is connected to a power supply, and the output terminal of the thyristor is connected to the microcrystalline plate heating component or the mica plate heating component. The processor is also connected to a temperature sensor for detecting the ambient temperature.
[0006] The infrared full-band uninterrupted irradiation device described above is characterized in that: the microcrystalline plate heating component includes a bottom cover, on which, from bottom to top, are arranged a heat insulation layer, a heating layer, a microcrystalline plate component SiC bottom layer, a microcrystalline plate component SiC and SiC composite intermediate layer, a microcrystalline plate component SiO2 surface layer, a crystal plate, and an upper frame.
[0007] The infrared full-band uninterrupted irradiation device described above is characterized in that: the thickness range of the SiC bottom layer of the microcrystalline plate assembly, the SiC and SiC composite intermediate layer of the microcrystalline plate assembly, and the SiO2 surface layer of the microcrystalline plate assembly are all 20-200μm.
[0008] The infrared full-band uninterrupted irradiation device described above is characterized in that: the heating layer is a graphene heating layer or a mica heating layer.
[0009] The infrared full-band uninterrupted irradiation device described above is characterized in that: the SiC content in the SiC bottom layer of the microcrystalline plate assembly is greater than 60%; and the SiO2 content in the SiO2 surface layer of the microcrystalline plate assembly is greater than 70%.
[0010] The infrared full-band uninterrupted irradiation device described above is characterized in that: the mica plate heating component includes a lower mica layer, and the lower mica layer is provided with an insulating layer, an upper mica layer, a mica plate component SiC bottom layer, a mica plate component SiC middle layer and a mica plate component SiO2 surface layer from bottom to top. A heating element is provided on the lower surface of the insulating layer, an insulating layer shielding element covering the upper surface is provided on the upper surface of the insulating layer, and a mica layer shielding element covering the lower surface and cooperating with the insulating layer shielding element to achieve electromagnetic radiation shielding is provided on the lower surface of the upper mica layer.
[0011] The infrared full-band uninterrupted irradiation device described above is characterized in that the thickness range of the SiC bottom layer of the mica board component, the SiC middle layer of the mica board component, and the SiO2 surface layer of the mica board component are all 20-200μm.
[0012] The infrared full-band uninterrupted irradiation device described above is characterized in that: the SiC content in the SiC bottom layer of the mica board component is greater than 60%; the SiC content in the SiC middle layer of the mica board component ranges from 30% to 60%; and the SiO2 content in the SiO2 surface layer of the mica board component is greater than 70%.
[0013] A control method for the aforementioned infrared full-band uninterrupted irradiation device, characterized in that it includes:
[0014] S11. Set N0 to the actual temperature measured by the temperature sensor and N1 to the preset temperature of the processor; set the uninterrupted infrared therapy mode in the processor, and after starting, the temperature sensor detects the actual temperature N0.
[0015] S12. When the actual temperature measured by the temperature sensor N0 is not less than the processor's preset temperature N1-4℃, the processor controls each optocoupler to adjust the conduction angle of each thyristor, so that the output power of the microcrystalline board heating component and the mica board heating component are both 100%.
[0016] S13. When the actual temperature N0 measured by the temperature sensor reaches the set temperature N1-3℃, the output power of the microcrystalline plate heating component and the mica plate heating component is reduced to 90%.
[0017] S14. When the actual temperature N0 measured by the temperature sensor reaches the set temperature N1-2℃, the output power of the microcrystalline plate heating component and the mica plate heating component is reduced to 70%.
[0018] S15. When the actual temperature N0 measured by the temperature sensor reaches the set temperature N1-1℃, the output power of the microcrystalline plate heating component and the mica plate heating component is reduced to 60%.
[0019] S26. When the actual temperature N0 measured by the temperature sensor is ≥ the set temperature N1, the output power of the microcrystalline plate heating component and the mica plate heating component is reduced to 40%.
[0020] A control method for the aforementioned infrared full-band uninterrupted irradiation device, characterized in that it includes:
[0021] S21. Set multiple preset infrared therapy modes in the processor;
[0022] S22. After selecting one of the preset infrared therapy modes, the processor controls the optocoupler to adjust the conduction angle of the thyristor according to the preset infrared therapy mode, thereby controlling the microcrystalline plate heating component and / or mica plate heating component to work at a preset power for a preset duration.
[0023] The beneficial effects of this invention are:
[0024] This invention features a microcrystalline plate heating element capable of emitting near, mid, and far-wavelength infrared radiation and a mica plate heating element capable of emitting mid and far-wavelength infrared radiation. Simultaneously, a processor controls multiple optocouplers, each controlling the conduction angle of a silicon controlled rectifier (SCR), thereby controlling the output power of the corresponding microcrystalline plate heating element and mica plate heating element. This achieves uninterrupted infrared radiation irradiation across the entire wavelength range, truly realizing the therapeutic effect of infrared radiation. It can be widely applied in light wave rooms, saunas, heaters, sunbathing, physiotherapy equipment, spectrum analyzers, medical aesthetic equipment, and spectrum energy rooms. [Image Description]
[0025] Figure 1 This is a control principle diagram of the present invention;
[0026] Figure 2 This is a circuit diagram of the present invention;
[0027] Figure 3 This is an exploded view of the microcrystalline plate heating component of the present invention;
[0028] Figure 4 This is an exploded view of the mica plate heating component of the present invention;
[0029] Figure 5 This is a schematic diagram illustrating an application scenario of the present invention. [Detailed Implementation]
[0030] The technical solutions in the embodiments of the present invention will now be clearly and completely described in conjunction with the accompanying drawings.
[0031] It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present invention are only used to explain the relative positional relationship and movement of the components in a specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly. Furthermore, descriptions involving "preferred," "second-best," etc., in this invention are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "preferred" or "second-best" may explicitly or implicitly include at least one of those features.
[0032] like Figure 1-2 As shown, an infrared full-band uninterrupted irradiation device includes at least one microcrystalline plate heating element 1 for emitting near, mid, and far-band infrared rays, at least one mica plate heating element 2 for emitting mid-infrared and far-infrared rays, and a control component for controlling the operation of the microcrystalline plate heating element 1 and the mica plate heating element 2 respectively. The control component includes a processor 3 and multiple silicon controlled rectifiers (SCRs) 4. The processor 3 is connected to multiple optocouplers 5, and each optocoupler 5 is connected to the control terminal of a SCR 4 to control the conduction angle of the SCR 4. The input terminal of the SCR 4 is connected to a power supply 6, and the output terminal of the SCR 4 is connected to either the microcrystalline plate heating element 1 or the mica plate heating element 2. The processor 3 is also connected to a temperature sensor for detecting the ambient temperature. In use, the processor 3 controls the operation of each optocoupler 5, and through each optocoupler 5, controls the conduction angle of the corresponding SCR 4, thereby controlling the output power of the corresponding microcrystalline plate heating element 1 and mica plate heating element 2, realizing the function of uninterrupted infrared full-band irradiation, and truly achieving the therapeutic effect of infrared radiation.
[0033] The infrared full-band uninterrupted irradiation device in this case is equipped with three sets of independent infrared control modules. One set consists of an optocoupler 5, a silicon controlled rectifier 4, and a microcrystalline plate heating element 1; another set consists of an optocoupler 5, a silicon controlled rectifier 4, and a mica plate heating element 2; and yet another set consists of an optocoupler 5, a silicon controlled rectifier 4, and a mica plate heating element 2. These three independent infrared control modules can achieve individual independent control or combined control. The principle is to continuously adjust the conduction angle of the silicon controlled rectifier 4 to control the output power of the microcrystalline plate heating element 1 and the mica plate heating element 2. This change in output power is achieved by adjusting the effective value of the current, i.e., controlling the average value or root mean square (RMS) of the current waveform.
[0034] In this case, the touchscreen serves as the input terminal for function and physiotherapy mode commands; the infrared full-band uninterrupted irradiation device in this case is equipped with two infrared physiotherapy modes, namely uninterrupted infrared control mode and intelligent physiotherapy mode.
[0035] In this case, the intelligent physiotherapy mode has 6 functional modes, namely fat burning and weight loss, beauty and skin care, meridian unblocking, anti-aging, cold and dampness dispelling, and kidney warming and yang tonifying. By preset different infrared wavebands and physiotherapy time and temperature, the 6 functional modes can be used to assist in physiotherapy.
[0036] The control method for the intelligent physiotherapy mode of the equipment in this case includes:
[0037] S21. Set multiple preset infrared therapy modes in processor 3, including fat burning and slimming infrared therapy mode, beauty and skin care infrared therapy mode, meridian clearing infrared therapy mode, anti-aging infrared therapy mode, cold and dampness dispelling infrared therapy mode, and kidney warming and yang tonifying infrared therapy mode.
[0038] S22. After selecting one of the preset infrared therapy modes, the processor 3 controls the optocoupler 5 to adjust the conduction angle of the thyristor 4 according to the preset infrared therapy mode, thereby controlling the microcrystalline plate heating component 1 and / or the mica plate heating component 2 to work at a preset power for a preset duration.
[0039] In this case, the fat-burning and slimming intelligent therapy mode is set to a constant temperature of 55℃ and a therapy time of 35 minutes, with far-infrared therapy controlled throughout the treatment; the beauty and skin-nourishing intelligent therapy mode is set to a constant temperature of 48℃ and a therapy time of 30 minutes, with near-infrared therapy controlled for 12 minutes first, followed by far-infrared therapy controlled for 18 minutes; the meridian-clearing intelligent therapy mode is set to a constant temperature of 45℃ and a therapy time of 30 minutes, with mid-infrared therapy controlled for 15 minutes first, followed by far-infrared therapy controlled for 15 minutes; and the anti-aging intelligent therapy... The mode is set to a constant temperature of 43℃ and a treatment time of 25 minutes. During the treatment, near-infrared therapy is controlled for 10 minutes, followed by far-infrared therapy for 15 minutes. The cold-dispelling and dampness-removing intelligent therapy mode is set to a constant temperature of 50℃ and a treatment time of 32 minutes. During the treatment, mid-infrared therapy is controlled for 15 minutes, followed by far-infrared therapy for 17 minutes. The kidney-warming and yang-tonifying intelligent therapy mode is set to a constant temperature of 44℃ and a treatment time of 20 minutes. During the treatment, mid-infrared therapy is controlled for 10 minutes, followed by far-infrared therapy for 10 minutes.
[0040] In this case, the uninterrupted infrared control mode is achieved by controlling the device to continuously irradiate infrared rays during the physiotherapy process.
[0041] The control method for the uninterrupted infrared control mode in this case includes:
[0042] S11. Set N0 to the actual temperature measured by the temperature sensor and N1 to the preset temperature of the processor; set the uninterrupted infrared physiotherapy mode in the processor 3, and after starting, the temperature sensor detects the actual temperature N0.
[0043] S12. When the actual temperature measured by the temperature sensor N0 is not less than the processor's preset temperature N1-4℃, the processor 3 controls each optocoupler 5 to adjust the conduction angle of each thyristor 4 so that the output power of the microcrystalline plate heating component 1 and the mica plate heating component 2 are both 100%.
[0044] S13. When the actual temperature N0 measured by the temperature sensor reaches the set temperature N1-3℃, the output power of the microcrystalline plate heating component 1 and the mica plate heating component 2 is reduced to 90%.
[0045] S14. When the actual temperature N0 measured by the temperature sensor reaches the set temperature N1-2℃, the output power of the microcrystalline plate heating component 1 and the mica plate heating component 2 is reduced to 70%.
[0046] S15. When the actual temperature N0 measured by the temperature sensor reaches the set temperature N1-1℃, the output power of the microcrystalline plate heating component 1 and the mica plate heating component 2 is reduced to 60%.
[0047] S26. When the actual temperature N0 measured by the temperature sensor is ≥ the set temperature N1, the output power of the microcrystalline plate heating component 1 and the mica plate heating component 2 is reduced to 40%.
[0048] Among them, during the constant temperature physiotherapy, the power output is automatically adjusted by repeatedly following the control method of the above-mentioned uninterrupted infrared control mode.
[0049] like Figure 3 As shown, the microcrystalline panel heating assembly 1 includes a bottom cover 11, on which, from bottom to top, are arranged a heat insulation layer 12, a heating layer 13, a SiC bottom layer 14, a SiC-SiC composite intermediate layer 15, a SiO2 surface layer 16, a crystal plate 17, and an upper frame 18. The SiC bottom layer 14, the SiC-SiC composite intermediate layer 15, and the SiO2 surface layer 16 form a gradient coating, which, in conjunction with power and temperature regulation, can achieve near-infrared, mid-infrared, and far-infrared radiation generation controlled from 100-400℃. The heating layer 13 is either a graphene heating layer or a mica heating layer.
[0050] Specifically, the thicknesses of the SiC bottom layer 14, the SiC-SiC composite intermediate layer 15, and the SiO2 surface layer 16 of the microcrystalline panel assembly are all in the range of 20-200 μm. The SiC bottom layer 14 contains more than 60% SiC, providing high adhesion and substrate thermal stress buffering, achieving full-band high radiation with an emissivity ε≈0.85. The SiC-SiC composite intermediate layer 15, as a transition layer, has the function of regulating mid-infrared radiation, with an emissivity ε=0.6 for thicknesses between 3-5 μm and an emissivity ε<0.4 for thicknesses >5 μm. The SiO2 surface layer 16 contains more than 70% SiO2, providing near-infrared selective enhancement due to photon localization, with an emissivity ε>0.92 for thicknesses between 1-2 μm and an emissivity ε<0.25 for thicknesses >5 μm.
[0051] like Figure 4 As shown, the mica panel heating component 2 includes a lower mica layer 21. From bottom to top, the lower mica layer 21 is provided with an insulating layer 22, an upper mica layer 23, a SiC bottom layer 24, a SiC intermediate layer 25, and a SiO2 surface layer 26. A heating element is located on the lower surface of the insulating layer 22, and an insulating layer shielding element 27 covering the upper surface is provided on the upper surface of the insulating layer 22. A mica layer shielding element is located on the lower surface of the upper mica layer 23, covering the lower surface and cooperating with the insulating layer shielding element 27 to achieve electromagnetic radiation shielding. The SiC bottom layer 24, SiC intermediate layer 25, and SiO2 surface layer 26 of the mica panel constitute a gradient coating. Combined with power and temperature regulation, it can achieve adjustable mid- and far-infrared radiation generation from 100-180℃. The shielding element reduces the impact of electromagnetic radiation on the human body.
[0052] Specifically, the thicknesses of the SiC bottom layer 24, the SiC intermediate layer 25, and the SiO2 surface layer 26 of the mica panel assembly are all in the range of 20-200 μm. The SiC bottom layer 24 contains more than 60% SiC, producing mid-infrared emissivity of 0.88-0.95, exhibiting high adhesion and substrate thermal stress buffering function, achieving a refractive index of 2.6-3.0. The SiC intermediate layer 25 contains 30%-60% SiC, producing mid-infrared emissivity of 0.70-0.85, serving as a transition layer and possessing the function of modulating mid-infrared radiation, achieving a refractive index of 1.8-2.5. The SiO2 surface layer 26 contains more than 70% SiO2, producing mid-infrared emissivity of 0.60-0.75, exhibiting near-infrared selective enhancement function due to photon localization effect, achieving a refractive index of 1.45.
[0053] like Figure 5As shown, one application scenario of the present invention is to install the microcrystalline plate heating component 1 and the mica plate heating component 2 on the wall and realize infrared physiotherapy by inputting control commands through a touch screen.
[0054] The above are merely preferred embodiments of the present invention and do not limit the patent scope of the present invention. All equivalent structural transformations made using the contents of the present invention's specification and drawings under the inventive concept of the present invention, or direct or indirect applications in other related technical fields, are included within the patent protection scope of the present invention.
Claims
1. An infrared full-band uninterrupted irradiation device, characterized in that: It includes at least one microcrystalline plate heating element (1) for emitting near, mid and far infrared radiation, at least one mica plate heating element (2) for emitting mid and far infrared radiation, and a control element for controlling the operation of the microcrystalline plate heating element (1) and the mica plate heating element (2) respectively. The control element includes a processor (3) and multiple thyristors (4). The processor (3) is connected to multiple optocouplers (5), and each optocoupler (5) is connected to the control terminal of a thyristor (4) to control the conduction angle of the thyristor (4). The input terminal of the thyristor (4) is connected to a power supply (6), and the output terminal of the thyristor (4) is connected to the microcrystalline plate heating element (1) or the mica plate heating element (2). The processor (3) is also connected to a temperature sensor for detecting the ambient temperature.
2. The infrared full-band uninterrupted irradiation device according to claim 1, characterized in that: The microcrystalline plate heating assembly (1) includes a bottom cover (11), and the bottom cover (11) is provided with a heat insulation layer (12), a heating layer (13), a microcrystalline plate assembly SiC bottom layer (14), a microcrystalline plate assembly SiC and SiC composite intermediate layer (15), a microcrystalline plate assembly SiO2 surface layer (16), a crystal plate (17) and an upper frame (18) from bottom to top.
3. The infrared full-band uninterrupted irradiation device according to claim 2, characterized in that: The thickness range of the SiC bottom layer (14), the SiC and SiC composite intermediate layer (15), and the SiO2 surface layer (16) of the microcrystalline panel assembly are all 20-200 μm.
4. The infrared full-band uninterrupted irradiation device according to claim 2, characterized in that: The heating layer (13) is a graphene heating layer or a mica heating layer.
5. The infrared full-band uninterrupted irradiation device according to claim 2, characterized in that: The SiC content in the SiC bottom layer (14) of the microcrystalline panel assembly is greater than 60%; the SiO2 content in the SiO2 surface layer (16) of the microcrystalline panel assembly is greater than 70%.
6. The infrared full-band uninterrupted irradiation device according to claim 1, characterized in that: The mica plate heating component (2) includes a lower mica layer (21). The lower mica layer (21) is provided with an insulating layer (22), an upper mica layer (23), a mica plate component SiC bottom layer (24), a mica plate component SiC middle layer (25), and a mica plate component SiO2 surface layer (26) from bottom to top. The lower surface of the insulating layer (22) is provided with a heating element. The upper surface of the insulating layer (22) is provided with an insulating layer shield (27) covering the upper surface. The lower surface of the upper mica layer (23) is provided with a mica layer shield that covers the lower surface and cooperates with the insulating layer shield (27) to achieve electromagnetic radiation shielding.
7. The infrared full-band uninterrupted irradiation device according to claim 6, characterized in that: The thickness range of the SiC bottom layer (24), SiC middle layer (25), and SiO2 surface layer (26) of the mica board assembly is 20-200 μm.
8. The infrared full-band uninterrupted irradiation device according to claim 6, characterized in that: The SiC content in the SiC bottom layer (24) of the mica board module is greater than 60%; the SiC content in the SiC middle layer (25) of the mica board module ranges from 30% to 60%; and the SiO2 content in the SiO2 surface layer (26) of the mica board module is greater than 70%.
9. A control method for an infrared full-band uninterrupted irradiation device using any one of claims 1-8 above, characterized in that: Including S11. Set N0 to the actual temperature measured by the temperature sensor and N1 to the preset temperature of the processor. Set the uninterrupted infrared therapy mode in the processor (3). After starting, the temperature sensor detects the actual temperature N0. S12. When the actual temperature measured by the temperature sensor N0 is not less than the processor's preset temperature N1-4℃, the processor (3) controls each optocoupler (5) to adjust the conduction angle of each thyristor (4) so that the output power of the microcrystalline plate heating component (1) and the mica plate heating component (2) is 100%. S13. When the actual temperature N0 measured by the temperature sensor reaches the set temperature N1-3℃, the output power of the microcrystalline plate heating component (1) and the mica plate heating component (2) is reduced to 90%. S14. When the actual temperature N0 measured by the temperature sensor reaches the set temperature N1-2℃, the output power of the microcrystalline plate heating component (1) and the mica plate heating component (2) is reduced to 70%. S15. When the actual temperature N0 measured by the temperature sensor reaches the set temperature N1-1℃, the output power of the microcrystalline plate heating component (1) and the mica plate heating component (2) is reduced to 60%. S26. When the actual temperature N0 measured by the temperature sensor is ≥ the set temperature N1, the output power of the microcrystalline plate heating component (1) and the mica plate heating component (2) is reduced to 40%.
10. A control method for an infrared full-band uninterrupted irradiation device using any one of claims 1-8 above, characterized in that: Including S21. Set multiple preset infrared therapy modes in the processor (3); S22. After selecting one of the preset infrared therapy modes, the processor (3) controls the optocoupler (5) to adjust the conduction angle of the thyristor (4) according to the preset infrared therapy mode, thereby controlling the microcrystalline plate heating component (1) and / or the mica plate heating component (2) to work at a preset power for a preset duration.