Micro LED chip laser-induced forward transfer modeling method

Abstract

The invention relates to the technical field of chip transfer, and discloses a Micro LED chip laser-induced forward transfer modeling method, which comprises the following steps: establishing a Micro LED chip laser-induced forward transfer three-dimensional solid mechanics multi-physical field model and a geometric physical model; according to the mechanical behaviors of all components of the geometric physical model in the three-dimensional space structure of the three-dimensional solid mechanics multi-physics field model under the multi-physics field coupling effect, the geometric physical model of the three-dimensional solid mechanics multi-physics field model is combined, and a target model of Micro LED chip laser-induced forward transfer is obtained; the target model is used for simulating the process of vaporizing the dynamic release layer by the laser to form high-pressure gas and the process of driving the Micro LED chip to be stripped and transferred from the rigid source substrate by the high-pressure gas so as to obtain the dynamic behavior of the Micro LED chip in the laser-induced forward transfer process.

Description

Technical Field

[0001] This invention relates to the field of Micro LED chip transfer technology, and in particular to a method, system, device and medium for modeling laser-induced forward transfer of Micro LED chips. Background Technology

[0002] Micro light-emitting display (Micro LED) is a new type of self-emissive display technology based on inorganic gallium nitride materials. It has advantages such as high brightness, high resolution, low energy consumption, and long lifespan. It has a wide range of applications and extremely high application value, and is the mainstream technology for future new display panels.

[0003] Currently, the manufacturing of Micro LED display devices mainly relies on mass transfer technology. This technology peels red, green, and blue Micro LED chips from different epitaxial substrates, then picks them up and transfers them to a target substrate, achieving a reliable mechanical and electrical connection with the driving circuit. Simultaneously, the alignment accuracy during the transfer process must be controlled within ±1.5μm, with a transfer yield required to reach over 99.9999%. Ensuring the positional accuracy during chip peeling, pick-up, transfer, and rebonding is the core issue and challenge of mass transfer technology, and a bottleneck that urgently needs to be overcome for Micro LED display technology to reach mature mass production and commercial application.

[0004] Among numerous mass transfer technologies, laser-induced forward transfer technology boasts high precision, efficiency, and yield, demonstrating exceptional application performance and development potential, making it one of the main technological routes for future development. However, the process mechanism of laser-induced forward transfer technology involves multiple physicochemical changes, making the process complex. The transfer effect is influenced by various factors, and the temporal and spatial scales of the transfer process are extremely small. Currently, it is difficult to directly conduct experiments to explore the entire process's patterns, which is detrimental to the mass production and development of Micro LED display technology. Summary of the Invention

[0005] The purpose of this invention is to provide a method, system, device and medium for modeling laser-induced forward transfer of Micro LED chips, which can solve the problem of not being able to obtain the law of Micro LED chip transfer process.

[0006] To address the aforementioned technical problems, embodiments of the present invention provide a method for modeling laser-induced forward transfer in Micro LED chips, comprising the following steps: Based on the three-dimensional spatial structure, mechanical behavior, and multiphysics field involved in the laser-induced forward transfer process of Micro LED chips, a three-dimensional solid mechanics multiphysics field model is established. A geometric-physical model is established based on the geometric structure of the laser-induced forward transfer of the Micro LED chip; wherein, the geometric structure includes a rigid source substrate, a dynamic release layer and a Micro LED chip arranged sequentially from top to bottom; Based on the mechanical behavior of each component of the geometric-physical model in the three-dimensional spatial structure of the three-dimensional solid mechanics multiphysics field model under the coupling of multiphysics fields, the geometric-physical model of the three-dimensional solid mechanics multiphysics field model is combined to obtain the target model of laser-induced forward transfer of Micro LED chip. The target model is used to simulate the process of laser vaporizing the dynamic release layer to form high-pressure gas and the process of high-pressure gas driving the Micro LED chip to be peeled and transferred from the rigid source substrate, so as to obtain the dynamic behavior of the laser-induced forward transfer process of the Micro LED chip.

[0007] Furthermore, prior to the geometric-physical model of the combined three-dimensional solid mechanics multiphysics model, the following is also included: The geometric physical model is adjusted based on the material parameters of each component in the geometric physical model; The material parameters of the rigid source substrate include: density, Young's modulus, and Poisson's ratio; the material parameters of the dynamic release layer include: density, Young's modulus, Poisson's ratio, tensile strength, shear strength, tensile energy release rate, shear energy release rate, and BK mode mixing index; the material parameters of the Micro LED chip include: density, Young's modulus, and Poisson's ratio.

[0008] Furthermore, prior to the geometric-physical model of the combined three-dimensional solid mechanics multiphysics model, the following is also included: The geometric physical model is adjusted based on the initial state, constraints, and contact relationships between its components. The initial state includes the initial displacement and initial velocity of the Micro LED chip; the constraint conditions include the fixed constraint conditions of the rigid source substrate and the free constraint conditions of the dynamic release layer and the Micro LED chip; the contact relationship includes the contact relationship between the rigid source substrate and the dynamic release layer and the contact relationship between the dynamic release layer and the Micro LED chip.

[0009] Furthermore, the dynamic behavior of the laser-induced forward transfer process of the Micro LED chip includes: Real-time displacement and velocity of the center point of the Micro LED chip, real-time volume and pressure of the high-pressure gas, real-time pressure range of the high-pressure gas, and real-time peeling length and stress distribution of the Micro LED chip.

[0010] Furthermore, the real-time pressure of the high-pressure gas is obtained using the following formula: ; In the formula, , These represent the volumes of the burning gas layer at this moment and the previous moment, respectively. , These represent the pressures of the burning gas layer at this moment and the previous moment, respectively. , These are the constant-pressure heat capacity and constant-temperature heat capacity of the burning gas layer, respectively. It is the distribution of laser power over time; It is the conversion parameter from laser energy to the pressure of the burning gas layer.

[0011] Embodiments of the present invention also provide a Micro LED chip laser-induced forward transfer modeling system, comprising: The first model building module is used to build a three-dimensional solid mechanics multiphysics model based on the three-dimensional spatial structure, mechanical behavior and multiphysics field involved in the laser-induced forward transfer process of Micro LED chips. The second model building module is used to build a geometric physical model based on the geometric structure of the laser-induced forward transfer of the Micro LED chip; wherein, the geometric structure includes a rigid source substrate, a dynamic release layer and a Micro LED chip arranged sequentially from top to bottom; The model combination simulation module is used to combine the three-dimensional solid mechanics multiphysics model and the geometric physical model based on the mechanical behavior of each component of the geometric physical model in the three-dimensional spatial structure of the three-dimensional solid mechanics multiphysics model under the coupling of multiphysics, and obtain the target model of laser-induced forward transfer of Micro LED chip. The target model is used to simulate the process of laser vaporizing the dynamic release layer to form high-pressure gas and the process of high-pressure gas driving the Micro LED chip to be peeled and transferred from the rigid source substrate, so as to obtain the dynamic behavior of the laser-induced forward transfer process of the Micro LED chip.

[0012] Embodiments of the present invention also provide a computer device, including: at least one processor; and a memory communicatively connected to the at least one processor; wherein the memory stores instructions executable by the at least one processor, the instructions being executed by the at least one processor to enable the at least one processor to perform the above-described Micro LED chip laser-induced forward transfer modeling method.

[0013] Embodiments of the present invention also provide a computer-readable storage medium storing a computer program that, when executed by a processor, implements the above-described Micro LED chip laser-induced forward transfer modeling method.

[0014] The laser-induced forward transfer simulation method for Micro LED chips provided by this invention has at least the following beneficial effects: First, based on the three-dimensional spatial structure, mechanical behavior, and multiphysics involved in the laser-induced forward transfer process of Micro LED chips, a three-dimensional solid mechanics multiphysics model is established to obtain the basic simulation environment for the laser-induced forward transfer of Micro LED chips. Then, based on the geometric structure of the laser-induced forward transfer of Micro LED chips, a geometric-physical model is established. Then, based on the mechanical behavior of each component of the geometric-physical model in the three-dimensional spatial structure of the three-dimensional solid mechanics multiphysics model under the coupling effect of multiphysics, the three-dimensional solid mechanics multiphysics model and the adjusted geometric-physical model are combined to realize the simulation of the laser-induced forward transfer process of Micro LED chips. Finally, the dynamic behavior of the laser-induced forward transfer process of Micro LED chips can be obtained through simulation.

[0015] This simulation process, starting from the physical mechanism, describes two key physical phenomena of laser-induced forward transfer of Micro LED chips: gas dynamics (the process by which the laser vaporizes the dynamic release layer to form high-pressure gas) and interface fracture mechanics (the process by which high-pressure gas drives the Micro LED chip to peel off and transfer from the rigid source substrate). The synergistic effect can completely simulate: laser energy → thermal energy → phase change → gas expansion → pressure increase → interface stress concentration → crack propagation → material separation → chip transfer. This can guide the optimization of high-precision, high-yield chip transfer process windows, replacing the traditional exploratory mode of repeated trials. It can quickly complete the screening and optimization of a large number of process parameters in a virtual environment, significantly reducing the loss of Micro LED chips and equipment, shortening the R&D cycle, and facilitating the mass production and development of Micro LED display technology. Attached Figure Description

[0016] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an undue limitation of the invention. In the drawings:

[0017] Figure 1 A flowchart illustrating a laser-induced forward transfer modeling method for Micro LED chips provided by the present invention; Figure 2 This invention provides a schematic diagram of a simulation process for laser-induced forward transfer of a Micro LED chip. Figure 3 A schematic diagram of a three-dimensional geometric model provided by the present invention; Figure 4 A schematic diagram of grid division provided by the present invention; Figure 5 This is a schematic diagram of the chip center point displacement calculation result provided by the present invention; Figure 6 This is a schematic diagram of the chip center point velocity calculation result provided by the present invention; Figure 7 A schematic diagram of gas volume calculation results provided by the present invention; Figure 8 This is a schematic diagram of gas pressure calculation results provided by the present invention; Figure 9 This is a schematic diagram of the pressure calculation range calculation results provided by the present invention; Figure 10 A schematic diagram of chip stress calculation results provided by the present invention; Figure 11 This is a schematic diagram of chip stress distribution provided by the present invention. Detailed Implementation

[0018] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0019] The technical solutions provided by the various embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0020] One embodiment of the present invention relates to a laser-induced forward transfer modeling method for Micro LED chips. The specific process of the Micro LED chip laser-induced forward transfer modeling method in this embodiment can be as follows: Figure 1 As shown, it includes: Step 101: Based on the three-dimensional spatial structure, mechanical behavior, and multiphysics field involved in the laser-induced forward transfer process of the Micro LED chip, establish a three-dimensional solid mechanics multiphysics field model.

[0021] Step 102: Establish a geometric physical model based on the geometric structure of the laser-induced forward transfer of the Micro LED chip; wherein, the geometric structure includes a rigid source substrate, a dynamic release layer and a Micro LED chip arranged sequentially from top to bottom.

[0022] Step 103: Based on the mechanical behavior of each component of the geometric-physical model in the three-dimensional spatial structure of the three-dimensional solid mechanics multiphysics field model under the coupling effect of multiphysics fields, the geometric-physical model of the three-dimensional solid mechanics multiphysics field model is combined to obtain the target model of laser-induced forward transfer of Micro LED chip; wherein, the target model is used to simulate the process of laser vaporizing the dynamic release layer to form high-pressure gas and the process of high-pressure gas driving Micro LED chip to peel off and transfer from rigid source substrate, so as to obtain the dynamic behavior of the laser-induced forward transfer process of Micro LED chip.

[0023] The following is a detailed description of the implementation details of the Micro LED chip laser-induced forward transfer modeling method in this embodiment. The following content is only for the convenience of understanding and is not necessary for implementing this solution.

[0024] See Figure 2 Assuming that the Micro LED chip laser-induced forward transfer modeling method of this embodiment simulates the Micro LED chip under conditions of a laser radius of 10 μm and a laser energy density of 80 mJ / cm², 2 Laser-induced forward transfer is performed under the operating conditions.

[0025] In step 101, the three-dimensional solid mechanics multiphysics model is established using COMSOL software. The model wizard is selected, the spatial dimension is set to three dimensions, the structural mechanics physics field is selected, and the study mode is selected as transient. The model uses the "Solid Mechanics" interface to analyze the contact mechanics process. The momentum balance equations involved in the model are shown below: ; In the formula, For material density, For displacement field, For the second type of Piola-Kirchhoff stress tensor, For the deformation gradient tensor, It is a volume force.

[0026] It should be noted that before establishing the model, it is necessary to analyze the model structure of the MicroLED chip transfer that occurs directly during the laser-induced forward transfer process. To make the established model more intuitive, a three-dimensional model is adopted. Based on the physical field analysis, a solid mechanics multiphysics model is selected to address the force and stress conditions of the MicroLED chip and the dynamic release layer during the laser-induced forward transfer process.

[0027] In step 102, the geometric and physical model of laser-induced forward transfer is shown in the schematic diagram. Figure 3As shown, from top to bottom, the dimensions of the rigid glass source substrate are 150μm×150μm×3μm, the dimensions of the flexible polyimide dynamic release layer are 150μm×150μm×2μm, the dimensions of the initial burning gas layer are 10μm in radius and 0.67μm in height, and the dimensions of the Micro LED chip are 20μm×20μm×2μm.

[0028] Among them, the rigid glass source substrate, the flexible dynamic release layer of polyimide, the burning gas layer and the Micro LED chip are all centrally symmetrical. When the model is built, the z-axis in three-dimensional space is used as the axis of symmetry. Only the part in a single quadrant is built in the part where x is positive and y is positive. When analyzing the results, symmetry is performed twice along the xOz plane and yOz plane in three-dimensional space to realize the construction of the complete model.

[0029] It should be noted that the model size parameters are all set in the global definition parameters of the COMSOL software. When comparative analysis is required, it can be achieved by changing the global definition parameters and remodeling and calculating.

[0030] In practical implementation, the geometric physical model is adjusted according to the material parameters of each component in the geometric physical model, as well as the initial state, constraints, and contact relationships between each component.

[0031] Specifically, the material parameters for each region in the model are first set: the conventional solid mechanical physical parameters of the materials include: adding materials in the COMSOL simulation software, setting the materials of glass (rigid source substrate), polyimide (flexible dynamic release layer) and Micro LED chip according to the laser-induced forward transfer process, and performing calculations and solutions, including the density, Young's modulus and Poisson's ratio of the materials.

[0032] The conventional gas physical parameters of the material include: adding the material in the COMSOL simulation software, setting the material of the burning gas layer according to the laser-induced forward transfer process and performing calculations, and setting the constant volume heat capacity, constant pressure heat capacity, gas molar mass, ideal gas state constant, and laser energy conversion efficiency of the material.

[0033] The physical parameters for material adhesion and peeling include: adding the material in the COMSOL simulation software, setting the contact peeling parameters of polyimide (flexible dynamic release layer) according to the laser-induced forward transfer process, and calculating and solving the parameters, including the tensile strength, shear strength, tensile energy release rate, shear energy release rate, and BK mode mixing index of polyimide.

[0034] The conventional solid mechanical parameters set are shown in Table 1: Table 1 The conventional gas physical parameters set are shown in Table 2: Table 2 The set adhesion and peel physical parameters are shown in Table 3: Table 3 Then set the initial conditions, boundary conditions, and contact pairs: The initial conditions are set as follows: the initial displacement and initial velocity of the glass rigid source substrate, polyimide dynamic release layer, calcination gas layer and Micro LED chip are set to 0, and all are linear elastic materials; the gas layer volume of the calcination gas layer is set to 210.49 μm3.

[0035] Setting boundary conditions includes: setting fixed constraints for the glass rigid source substrate domain and fixed constraints for the boundaries; setting boundary loads on the contact surface between the burning gas layer and the dynamic release layer, i.e., gas layer pressure. .

[0036] Setting contact pairs includes: setting contact pairs at the interface contact positions between the glass rigid source substrate and the polyimide dynamic release layer, and at the interface contact positions between the polyimide dynamic release layer and the Micro LED chip.

[0037] In the glass-polyimide contact pair, the lower surface of the glass is selected as the source boundary and the upper surface of the polyimide is selected as the target boundary; in the polyimide-Micro LED chip contact pair, the upper surface of the Micro LED chip is selected as the source boundary and the lower surface of the polyimide is selected as the target boundary.

[0038] In step 103, first set the "Event" and "Boundary Ordinary Differentials and Differential Algebraic Equations": "Event" is used to record the gas layer volume at a certain moment during the simulation compared to the previous moment.

[0039] During the simulation, the pressure change of the burning gas layer was discretized and calculated every 1 ns for subsequent calculations. The iterative calculation with a period of 1 ns was performed using mathematical induction:

[0040] ; In the formula, , The volumes of the burning gas layer at this moment and the previous moment are respectively calculated by integrating using a global variable probe; , The pressure of the burning gas layer at this moment and the previous moment are respectively used for iterative calculation with a period of 1ns using the "event" setting; , These are the constant-pressure heat capacity and constant-temperature heat capacity of the burning gas layer, respectively. It is the distribution of laser power over time; It is the conversion parameter from laser energy to gas layer pressure.

[0041] Add a "Discrete State" to the "Event" to represent the volume of the burning gas layer at that moment. and the volume of the burning gas layer at the previous moment Initialize the settings, setting the initial value to the volume of the cylindrical region containing the initial burning gas layer, i.e., 210.49 μm³; and set the pressure of the burning gas layer at the previous moment. Perform initialization settings, setting the initial value to 0.

[0042] Add an "Explicit Event" to the "Events" list and set the event period to 1 ns. When the simulation time reaches the event period, the volume of the burned gas layer from the previous moment will be recorded. Iteration for this period The volume of the burning gas layer at this moment Iterate to the real-time volume at that moment. Calculate and assign the value to the pressure of the burning gas layer at the previous moment. After completing the calculation and assignment, the next event cycle begins.

[0043] "Edge-ordinary differential equations and differential-algebraic equations" are used to calculate the length of the dynamically released layer peeled off from the rigid source substrate during the simulation.

[0044] It should be noted that during the simulation, the pressure range of the scorching gas layer expands as the peeling range increases. The radius of the peeling range is calculated and replaced with the previous pressure range radius. The dependent variable is set as follows in the "Odd Differential and Differential Algebraic Equations". l The number of dependent variables is 1.

[0045] In "Boundary Ordinary Differential Equations and Differential Algebraic Equations", select "Distributed Ordinary Differential Equations" and set the quality coefficient to 0.

[0046] In "Marginal Differentials and Differential Algebraic Equations", select "Initial Values" to set the dependent variable. l and the time derivative of the dependent variable l The initial value of each is 0.

[0047] Next, set the mesh generation. The mesh generation method is to select a free triangular mesh with a normal cell size, and the sequence type is physics-controlled mesh. The mesh generation is as follows: Figure 4 As shown.

[0048] Finally, the simulation results of the laser-induced forward transfer process are calculated and analyzed. The simulation results are as follows: Figures 5-11 As shown. The specific technical steps are as follows:

[0049] In the COMSOL simulation software, add a study. In the "Step 1: Transient" study settings, set the time unit to "ns" and the study time to 0-50ns. Check the coupling solution of the selected physics fields and variables. If there are no errors, click "Calculate" to perform the simulation solution. After the calculation is complete, export the simulation results for subsequent analysis and processing.

[0050] It should be noted that, based on the COMSOL simulation results and the corresponding post-processing, several probe groups are added in the "Definition" section, and "Selection" is added in the "Dataset" section of the "Results" section to record the simulation result data of the probe groups.

[0051] The probe set includes: a point probe for recording and mapping the displacement of the center point of the Micro LED chip; a point probe for recording and mapping the velocity of the center point of the Micro LED chip; a global variable probe set for recording and mapping the real-time volume, current volume, and previous volume of the scorched gas layer; a global variable probe set for recording and mapping the real-time gas pressure of the scorched gas layer and the increase in gas pressure generated by the laser within each step; a global variable probe set for recording and mapping the peeling length and the range of gas pressure action; and a point probe set for recording and mapping the von Mises stress at the center point of the bottom surface and the center point of the bottom edge of the Micro LED chip.

[0052] A point probe is placed at the center point of the bottom surface of the Micro LED chip to record and plot the displacement of the center point of the Micro LED chip, which is used to approximate the displacement of the entire Micro LED chip, as shown in the schematic diagram. Figure 5 As shown.

[0053] A point probe is placed at the center point of the bottom surface of the Micro LED chip to record and plot the velocity at the center point of the Micro LED chip, which is used to approximate the velocity of the entire Micro LED chip, as shown in the schematic diagram. Figure 6 As shown.

[0054] Configure a global variable probe group to record and plot the real-time volume of the burning gas layer. Volume at this moment Volume at the previous moment ,like Figure 7 As shown. Real-time volume It keeps increasing, and at this moment the volume Volume at the previous moment The simulation iterates until it reaches an integer nanosecond.

[0055] Set up a global variable probe group to record and plot the real-time gas pressure of the burning gas layer. The laser generates an increase in gas pressure within each step. As shown in the diagram Figure 8 As shown. Real-time gas pressure It reaches its maximum at 9 ns, at 134.04 MPa, and then begins to decay, reaching around 10 MPa.

[0056] A global variable probe group is set up to record and plot the peel length and the range of gas pressure, as shown in the schematic diagram. Figure 9 As shown. When the peeling length is less than the laser radius, the pressure application range remains the same as the laser radius, i.e., 10 μm; when the peeling length exceeds the laser radius, the pressure application range is the same as the peeling length.

[0057] Point probe groups are set at the center point of the bottom surface and the center point of the bottom edge of the MicroLED chip to record and plot the von Mises stress at these points. Figure 10 As shown, the maximum stress at the center point of the bottom surface of the chip is 2406.6 MPa, and the maximum stress at the center point of the bottom edge of the chip is 1802.9 MPa.

[0058] Add a "3D Plotting Group" to the "Results" panel to plot the stress distribution of the Micro LED chip, such as... Figure 11 As shown, the maximum stress on the Micro LED chip occurs at the center point of the bottom surface of the chip, followed by the center line of the ground, while the stress is lower at other locations.

[0059] The Micro LED chip laser-induced forward transfer modeling method of this embodiment has the following beneficial effects: (1) Using COMSOL simulation software, we conducted a comparative analysis of Micro LED chips with different laser energy densities and laser radii under the condition that the chip size, dynamic release layer size and material are the same.

[0060] (2) COMSOL simulation software was used to simulate the laser-induced forward transfer process of Micro LED chips. A three-dimensional model was established to study the distribution of displacement, velocity, stress and other properties of Micro LED chips during the transfer process.

[0061] (3) COMSOL simulation software was used to simulate the laser-induced forward transfer process of Micro LED chips. A three-dimensional model was established to study the volume and pressure changes of the burning gas layer during the transfer process.

[0062] The steps of the various methods described above are only for clarity. In practice, they can be combined into one step or some steps can be split into multiple steps. As long as they include the same logical relationship, they are all within the protection scope of this invention. Adding insignificant modifications or introducing insignificant designs to the algorithm or process, without changing the core design of the algorithm and process, are also within the protection scope of this invention.

[0063] Another embodiment of the present invention relates to a simulation system for laser-induced forward transfer of a Micro LED chip. The implementation details of the Micro LED chip laser-induced forward transfer modeling system of this embodiment are described below. The following content is only for ease of understanding and is not essential for implementing this solution. The Micro LED chip laser-induced forward transfer modeling system of this embodiment includes: The first model building module is used to build a three-dimensional solid mechanics multiphysics model based on the three-dimensional spatial structure, mechanical behavior and multiphysics field involved in the laser-induced forward transfer process of Micro LED chips. The second model building module is used to build a geometric physical model based on the geometric structure of the laser-induced forward transfer of the Micro LED chip; wherein, the geometric structure includes a rigid source substrate, a dynamic release layer and a Micro LED chip arranged from top to bottom; The model combination simulation module is used to combine the three-dimensional solid mechanics multiphysics model and the geometric physical model to obtain the target model of laser-induced forward transfer of Micro LED chips, based on the mechanical behavior of each component of the geometric physical model in the three-dimensional spatial structure of the three-dimensional solid mechanics multiphysics model under the coupling effect of multiphysics. The target model is used to simulate the process of laser vaporizing the dynamic release layer to form high-pressure gas and the process of high-pressure gas driving the Micro LED chip to peel off and transfer from the rigid source substrate, so as to obtain the dynamic behavior of the laser-induced forward transfer process of Micro LED chips.

[0064] It is not difficult to see that this embodiment is a system embodiment corresponding to the above method embodiments, and this embodiment can be implemented in conjunction with the above method embodiments. The relevant technical details and technical effects mentioned in the above embodiments are still valid in this embodiment, and will not be repeated here to reduce repetition. Accordingly, the relevant technical details mentioned in this embodiment can also be applied to the above embodiments.

[0065] It is worth mentioning that all modules involved in this embodiment are logical modules. In practical applications, a logical unit can be a physical unit, a part of a physical unit, or a combination of multiple physical units. Furthermore, to highlight the innovative aspects of this invention, this embodiment does not introduce units that are not closely related to solving the technical problem proposed by this invention; however, this does not mean that other units are absent from this embodiment.

[0066] Another embodiment of the present invention relates to a computer device, comprising: at least one processor; and a memory communicatively connected to the at least one processor; wherein the memory stores instructions executable by the at least one processor, the instructions being executed by the at least one processor to enable the at least one processor to perform the Micro LED chip laser-induced forward transfer modeling method of the above embodiments.

[0067] The memory and processor are connected via a bus, which can include any number of interconnecting buses and bridges, connecting various circuits of one or more processors and memories. The bus can also connect various other circuits, such as peripheral devices, voltage regulators, and power management circuits, which are well known in the art and will not be described further herein. The bus interface provides an interface between the bus and the transceiver. The transceiver can be a single element or multiple elements, such as multiple receivers and transmitters, providing a unit for communicating with various other devices over a transmission medium. Data processed by the processor is transmitted over the wireless medium via an antenna, which further receives data and transmits it to the processor.

[0068] The processor manages the bus and general processing, and also provides various functions, including timing, peripheral interfaces, voltage regulation, power management, and other control functions. Memory is used to store data used by the processor during operation.

[0069] Another embodiment of the present invention relates to a computer-readable storage medium storing a computer program. When executed by a processor, the computer program implements the method embodiments described above.

[0070] That is, those skilled in the art will understand that all or part of the steps in the methods of the above embodiments can be implemented by a program instructing related hardware. This program is stored in a storage medium and includes several instructions to cause a device (which may be a microcontroller, chip, etc.) or processor to execute all or part of the steps of the methods described in the various embodiments of the present invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0071] Those skilled in the art will understand that the above embodiments are specific embodiments for implementing the present invention, and in practical applications, various changes can be made to them in form and detail without departing from the spirit and scope of the present invention.

Claims

1. A method for modeling laser-induced forward transfer in Micro LED chips, characterized in that, The method includes: Based on the three-dimensional spatial structure, mechanical behavior, and multiphysics field involved in the laser-induced forward transfer process of Micro LED chips, a three-dimensional solid mechanics multiphysics field model is established. A geometric-physical model is established based on the geometric structure of the laser-induced forward transfer of the Micro LED chip; wherein, the geometric structure includes a rigid source substrate, a dynamic release layer and a Micro LED chip arranged sequentially from top to bottom; Based on the mechanical behavior of each component of the geometric-physical model in the three-dimensional spatial structure of the three-dimensional solid mechanics multiphysics field model under the coupling of multiphysics fields, the geometric-physical model of the three-dimensional solid mechanics multiphysics field model is combined to obtain the target model of laser-induced forward transfer of Micro LED chip. The target model is used to simulate the process of laser vaporizing the dynamic release layer to form high-pressure gas and the process of high-pressure gas driving the Micro LED chip to be peeled and transferred from the rigid source substrate, so as to obtain the dynamic behavior of the laser-induced forward transfer process of the Micro LED chip.

2. The Micro LED chip laser-induced forward transfer modeling method according to claim 1, characterized in that, Prior to the geometric-physical model of the combined three-dimensional solid mechanics multiphysics model, the following is also included: The geometric physical model is adjusted based on the material parameters of each component in the geometric physical model; The material parameters of the rigid source substrate include: density, Young's modulus, and Poisson's ratio; the material parameters of the dynamic release layer include: density, Young's modulus, Poisson's ratio, tensile strength, shear strength, tensile energy release rate, shear energy release rate, and BK mode mixing index; the material parameters of the Micro LED chip include: density, Young's modulus, and Poisson's ratio.

3. The Micro LED chip laser-induced forward transfer modeling method according to claim 2, characterized in that, Prior to the geometric-physical model of the combined three-dimensional solid mechanics multiphysics model, the following is also included: The geometric physical model is adjusted based on the initial state, constraints, and contact relationships between its components. The initial state includes the initial displacement and initial velocity of the Micro LED chip; the constraint conditions include the fixed constraint conditions of the rigid source substrate and the free constraint conditions of the dynamic release layer and the Micro LED chip; the contact relationship includes the contact relationship between the rigid source substrate and the dynamic release layer and the contact relationship between the dynamic release layer and the Micro LED chip.

4. The Micro LED chip laser-induced forward transfer modeling method according to claim 1, characterized in that, The dynamic behavior of the laser-induced forward transfer process of the Micro LED chip includes: Real-time displacement and velocity of the center point of the Micro LED chip, real-time volume and pressure of the high-pressure gas, real-time pressure range of the high-pressure gas, and real-time peeling length and stress distribution of the Micro LED chip.

5. The Micro LED chip laser-induced forward transfer modeling method according to claim 4, characterized in that, The real-time pressure of the high-pressure gas is obtained by the following formula: ； In the formula, , These represent the volumes of the burning gas layer at this moment and the previous moment, respectively. , These represent the pressures of the burning gas layer at this moment and the previous moment, respectively. , These are the constant-pressure heat capacity and constant-temperature heat capacity of the burning gas layer, respectively. It is the distribution of laser power over time; It is the conversion parameter from laser energy to the pressure of the burning gas layer.

6. A micro LED chip laser-induced forward transfer modeling system, characterized in that, The system includes: The first model building module is used to build a three-dimensional solid mechanics multiphysics model based on the three-dimensional spatial structure, mechanical behavior and multiphysics field involved in the laser-induced forward transfer process of Micro LED chips. The second model building module is used to build a geometric physical model based on the geometric structure of the laser-induced forward transfer of the Micro LED chip; wherein, the geometric structure includes a rigid source substrate, a dynamic release layer and a Micro LED chip arranged sequentially from top to bottom; The model combination simulation module is used to combine the three-dimensional solid mechanics multiphysics model and the geometric physical model based on the mechanical behavior of each component of the geometric physical model in the three-dimensional spatial structure of the three-dimensional solid mechanics multiphysics model under the coupling of multiphysics, and obtain the target model of laser-induced forward transfer of Micro LED chip. The target model is used to simulate the process of laser vaporizing the dynamic release layer to form high-pressure gas and the process of high-pressure gas driving the Micro LED chip to be peeled and transferred from the rigid source substrate, so as to obtain the dynamic behavior of the laser-induced forward transfer process of the Micro LED chip.

7. A computer device, characterized in that, include: At least one processor; And a memory communicatively connected to the at least one processor; wherein the memory stores instructions executable by the at least one processor, the instructions being executed by the at least one processor to enable the at least one processor to perform the Micro LED chip laser-induced forward transfer modeling method as described in any one of claims 1 to 5.

8. A computer-readable storage medium storing a computer program, characterized in that, When the computer program is executed by the processor, it implements the Micro LED chip laser-induced forward transfer modeling method as described in any one of claims 1 to 5.

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