Process chamber and semiconductor equipment

Abstract

The invention provides a process chamber and semiconductor equipment, and the process chamber comprises a chamber body, a laser penetrating plate, and a gas control assembly. The laser penetrating plate comprises a plurality of grooves and a plurality of adsorption holes; wherein the plurality of grooves are all arranged at the edge of the laser penetrating plate; at least one adsorption hole is formed in each groove; under the condition that the cavity body abuts against the laser penetrating plate, the grooves make contact with the edge of the cavity body, and a plurality of adsorption cavities are formed. And the gas control assembly is communicated with the plurality of adsorption cavities and is configured to control the gas pressure in the plurality of adsorption cavities. Therefore, under the condition that the laser penetrating plate is desorbed, the pressure in the groove can be rapidly, safely and stably increased to be consistent with the external pressure through the gas control assembly, so that the laser penetrating plate is rapidly desorbed, and the process production efficiency is further improved.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor equipment, and more particularly to a process chamber and semiconductor equipment. Background Technology

[0002] In integrated circuit manufacturing, ion implantation disrupts the crystal lattice structure and introduces defects, necessitating annealing techniques to activate impurities and repair the lattice. Traditional rapid thermal annealing (RTP) relies on overall heating, resulting in high thermal budgets and issues such as substrate impurity diffusion and junction depth shift, making it unsuitable for advanced process requirements. Laser annealing, with its advantages of millisecond to nanosecond-level instantaneous heating and high spatial selectivity, has become a potential alternative to traditional RTP. However, with the continuous development of laser annealing equipment, production efficiency needs further improvement. Summary of the Invention

[0003] In view of this, embodiments of the present disclosure provide a process chamber and a semiconductor device to shorten the production cycle and improve production efficiency.

[0004] The technical solution disclosed herein is implemented as follows:

[0005] This disclosure provides a process chamber, comprising: a chamber body, a laser penetrating plate, and a gas control assembly; wherein the laser penetrating plate includes: multiple grooves and multiple adsorption holes; wherein the multiple grooves are all disposed on the edge of the laser penetrating plate; each groove is provided with at least one adsorption hole; when the chamber body and the laser penetrating plate are in contact with each other, the multiple grooves contact the edge of the chamber body and form multiple adsorption cavities; the gas control assembly is in communication with the multiple adsorption cavities and is configured to control the gas pressure in the multiple adsorption cavities.

[0006] In the above scheme, the gas control component is configured to discharge the gas in the adsorption chamber when the process chamber is in working state, until the pressure difference between the adsorption chamber and the external environment is greater than a first preset value; or, when the process chamber is in non-working state, to fill the adsorption chamber with gas until the pressure difference between the adsorption chamber and the external environment is less than a second preset value.

[0007] In the above scheme, the gas control component is configured to adjust the first inflation rate to a second inflation rate when the pressure difference between the adsorption chamber and the external environment is less than a third preset value; wherein, the first inflation rate is greater than the second inflation rate; and the third preset value is greater than the second preset value and less than the first preset value.

[0008] In the above scheme, the gas control component includes: a first controller, a first gas pipeline, a first control valve, and a first sensor; wherein, the first sensor is disposed in the groove and configured to monitor the pressure difference between the adsorption chamber and the external environment; the first control valve is connected to the adsorption chamber through the first gas pipeline and the adsorption hole; the first controller is connected to the first sensor and the first control valve respectively and is configured to control the inflation rate of the first control valve based on the pressure difference transmitted by the first sensor.

[0009] In the above scheme, the gas control component, which is connected to the chamber body, is also configured to introduce an inert gas into the chamber body, and, when the process chamber is in operation, to introduce the gas in the chamber body into the adsorption hole.

[0010] In the above scheme, the multiple trenches are concentrically distributed; the distance between adjacent trenches is greater than the width of the opening end of the trench.

[0011] In the above scheme, multiple adsorption pores in the multiple trenches are symmetrically distributed.

[0012] This disclosure also provides a semiconductor device, including: a laser and a process chamber as described in any of the above embodiments; wherein the laser emitted by the laser passes through the laser penetration plate into the process chamber and performs laser annealing on the wafer to be annealed in the process chamber.

[0013] In the above scheme, the semiconductor device further includes: a temperature control component; the temperature control component is configured to monitor the temperature inside the process chamber in real time; and a gas control component is connected to the temperature control component and configured to adjust the gas pressure difference between the adsorption chamber and the external environment based on the temperature inside the process chamber.

[0014] In the above scheme, the semiconductor device further includes: a carrier component and a driving component; wherein, the carrier component is disposed in the process chamber and configured to carry the wafer to be annealed; the driving component is disposed in the process chamber, connected to the carrier platform, and configured to drive the carrier platform to move in the process chamber and adjust the position of the carrier platform relative to the laser.

[0015] This disclosure creates a negative pressure by evacuating the adsorption chamber through adsorption holes, generating an adsorption force between the laser-penetrating plate and the chamber body. This adsorption force tightly fixes the laser-penetrating plate and the chamber body, preventing movement of the laser-penetrating plate from interfering with the laser annealing process. A gas control component is configured to control the gas pressure within multiple adsorption chambers. Thus, this disclosure can control the adsorption force between the laser-penetrating plate and the chamber body by controlling the gas pressure within multiple adsorption chambers. Therefore, when desorbing the laser-penetrating plate, if the trench cannot reach a normal positive pressure, this embodiment can use the gas control component to rapidly and safely raise the pressure within the trench to match the external pressure, allowing for rapid desorbing of the laser-penetrating plate and further improving process efficiency. Attached Figure Description

[0016] Figure 1 Schematic diagram of the structure of the process chamber provided in the embodiments of this disclosure Figure 1 ;

[0017] Figure 2 Schematic diagram of the structure of the laser penetrating plate provided in the embodiments of this disclosure Figure 1 ;

[0018] Figure 3 Schematic diagram of the structure of the laser penetrating plate provided in the embodiments of this disclosure Figure 2 ;

[0019] Figure 4 This is a schematic diagram of the structure of the gas control assembly provided in the embodiments of this disclosure;

[0020] Figure 5 Schematic diagram of the structure of the laser penetrating plate provided in the embodiments of this disclosure Figure 3 ;

[0021] Figure 6 Schematic diagram of the structure of the process chamber provided in the embodiments of this disclosure Figure 2 ;

[0022] Figure 7 Schematic diagram of the structure of the semiconductor device provided in the embodiments of this disclosure Figure 1 ;

[0023] Figure 8 Schematic diagram of the structure of the semiconductor device provided in the embodiments of this disclosure Figure 2 . Detailed Implementation

[0024] To make the objectives, technical solutions, and advantages of this disclosure clearer, the technical solutions of this disclosure are further described in detail below with reference to the accompanying drawings and embodiments. The described embodiments should not be regarded as limitations on this disclosure. All other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this disclosure.

[0025] In the following description, references are made to “some embodiments,” which describe a subset of all possible embodiments. However, it is understood that “some embodiments” may be the same subset or different subsets of all possible embodiments and may be combined with each other without conflict.

[0026] If the application documents contain similar descriptions such as "first / second", the following explanation shall be added: In the following description, the terms "first / second / third" are used only to distinguish similar objects and do not represent a specific order of objects. It is understood that "first / second / third" may be interchanged in a specific order or sequence where permitted, so that the embodiments of this disclosure described herein can be implemented in an order other than that illustrated or described herein.

[0027] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The terminology used herein is for the purpose of describing embodiments of this disclosure only and is not intended to be limiting of this disclosure.

[0028] Figure 1 This is a schematic diagram of an optional process chamber 100 provided in an embodiment of this disclosure, which will be combined with... Figure 1 The steps shown will be explained. It should be noted that... Figure 1 The example also shows the wafer 40 to be annealed and the wafer chuck 50, which is used to carry and fix the wafer 40 to be annealed.

[0029] In this embodiment of the disclosure, reference is made to Figure 1 The process chamber 100 includes a chamber body 10 and a laser-penetrating plate 20. The chamber body 10 can be used to accommodate the wafer 40 to be annealed. The material of the chamber body 10 can be a metal alloy, ceramic, etc. The material of the laser-penetrating plate 20 can be quartz glass, etc.

[0030] Figure 2 and Figure 3 This is an optional structural diagram of the optional laser-penetrating plate 20 provided in the embodiments of this disclosure. It should be noted that... Figure 2 A top view of the laser-penetrating plate 20 is shown in the example. Figure 3 A frontal sectional view of the laser-penetrating plate 20 is shown in the example. The sectional view is located at... Figure 2 The location of the adsorption pore 22 in the middle. Figure 2 and Figure 3 Only one groove 21 has been shown. The remaining grooves can be understood by referring to the example, and will not be described in detail here.

[0031] In this embodiment of the disclosure, combined with Figure 2 and Figure 3The laser-penetrating plate 20 includes multiple grooves 21 and multiple adsorption holes 22. The multiple grooves 21 are all located on the edge of the laser-penetrating plate 20. Each groove 21 has at least one adsorption hole 22. When the chamber body 10 and the laser-penetrating plate 20 are in contact, the multiple grooves 21 contact the edge of the chamber body 10, forming multiple adsorption cavities. Thus, in this embodiment, the adsorption cavities can be evacuated through the adsorption holes 22 to create a negative pressure, generating an adsorption force between the laser-penetrating plate 20 and the chamber body 10. The laser-penetrating plate 20 and the chamber body 10 can be tightly fixed by the adsorption force generated by the adsorption cavities, preventing the movement of the laser-penetrating plate 20 from interfering with the laser annealing process. Simultaneously, this embodiment can prevent gas leakage within the process chamber 100 or the entry of external environmental impurities into the process chamber 100, ensuring the airtightness of the process chamber 100.

[0032] Figure 4 This is a schematic diagram of another optional process chamber structure provided in this embodiment of the disclosure. It should be noted that... Figure 4 The example illustrates the component composition and connection relationship of the gas control assembly 30. The gas control assembly 30 may also include other types of components, which are not limited here. Figure 4 Only one adsorption chamber of the laser penetrating plate 20 is shown in the example. The connection relationship between the remaining adsorption chambers of the laser penetrating plate 20 and the gas control component 30 can be understood by referring to the example, and will not be repeated here.

[0033] In this embodiment of the disclosure, combined with Figure 2 and Figure 3 Before laser annealing and other processes are performed in the process chamber 100, a gas pump or similar device can draw gas from the groove 21 through the adsorption hole 22 and then close the adsorption hole 22 to create a negative pressure environment for adsorbing the laser penetrating plate 20. After the annealing and other processes are completed, the adsorption hole 22 is opened to desorb the laser penetrating plate 20. However, in actual operation, after the adsorption hole 22 is opened, the groove 21 cannot reach a normal positive pressure. It is necessary to use a hard object to pry it open to increase the communication area between the groove 21 and the external environment to achieve desorption of the laser penetrating plate 20. Prying it open with a hard object can damage the laser penetrating plate 20 and easily introduce impurities into the process chamber 100. At the same time, the process of prying it open with a hard object will prolong the laser annealing process time and affect the process production efficiency.

[0034] In this embodiment of the disclosure, reference is made to Figure 4The process chamber 100 also includes a gas control component 30. The gas control component 30 may include differential pressure sensors, gas control valves, and other devices. The gas control component 30 is connected to multiple adsorption chambers. The gas control component 30 is configured to control the gas pressure within the multiple adsorption chambers. Thus, this embodiment of the present disclosure can control the adsorption force between the laser penetrating plate 20 and the chamber body 10 by controlling the gas pressure within the multiple adsorption chambers, thereby controlling the adsorption and desorption of the laser penetrating plate 20. Therefore, during desorption, if the trench 21 cannot reach a normal positive pressure, this embodiment of the present disclosure can use the gas control component 30 to rapidly and safely raise the pressure within the trench 21 to match the external pressure, allowing the laser penetrating plate 20 to desorb quickly and further improve process production efficiency.

[0035] Some embodiments of this disclosure, with reference to Figure 4 Multiple adsorption holes are symmetrically distributed within multiple grooves. For example, multiple adsorption holes are arranged symmetrically in pairs or groups with the center of the laser penetration plate as the axis of symmetry. This ensures that the negative pressure application points are evenly distributed circumferentially, avoiding excessively strong or weak local adsorption forces. This uniform adsorption force allows for a tighter and smoother contact between the laser penetration plate and the edge of the chamber body, reducing gaps caused by uneven stress and thus enhancing overall sealing, preventing leakage of process gases or entry of external environmental impurities. The tensile force generated by the negative pressure is evenly distributed along the edge of the plate, preventing excessive stress in localized areas due to concentrated adsorption holes, and reducing the risk of plate cracking or breakage.

[0036] Some embodiments of this disclosure, with reference to Figure 4 The gas control component 30 is configured to discharge gas from the adsorption chamber when the process chamber 100 is in operation, until the pressure difference between the adsorption chamber and the external environment exceeds a first preset value. For example, the gas control component 30 can actively evacuate gas from the adsorption chamber until the pressure difference between the adsorption chamber and the external environment exceeds the first preset value. The external environment pressure can be atmospheric pressure (approximately 760 Torr). The first preset value can be 100 Torr. Thus, the laser penetrating plate 20 can achieve adsorption and fixation through the negative pressure of the adsorption chamber.

[0037] In this embodiment of the disclosure, reference is made to Figure 4 When the process chamber 100 is not in operation, gas is introduced into the adsorption chamber until the pressure difference between the adsorption chamber and the external environment is less than a second preset value. The first preset value is more than 20 times the second preset value. For example, the second preset value can be 5 Torr. That is to say, the gas control component 30 can reduce the pressure difference between the adsorption chamber and the external environment by actively introducing gas into the adsorption chamber, thereby facilitating the desorption of the laser penetrating plate 20.

[0038] It should be noted that the specific values ​​of the first and second preset values ​​can be determined based on whether parameters such as sealing condition and process flatness / stability requirements are met. For example, the specific setting of the first preset value needs to ensure that the fit between the laser penetrating plate and the underlying support surface (such as the chamber body) meets the requirements of optical flatness and thermal conduction throughout the entire working area, and remains stable during the process without any measurable displacement or vibration. The specific setting of the second preset value needs to ensure that the laser penetrating plate is in a free or easily separable state, in which case the laser penetrating plate can be smoothly detached with slight external force.

[0039] Some embodiments of this disclosure, with reference to Figure 1 The gas control component 30 is configured to adjust the first inflation rate to a second inflation rate when the pressure difference between the adsorption chamber and the external environment is less than a third preset value; wherein the first inflation rate is greater than the second inflation rate; and the third preset value is greater than the second preset value and less than the first preset value. For example, the gas control component 30 can dynamically adjust the valve opening or pump speed by monitoring the pressure difference between the adsorption chamber and the external environment in real time, so that the inflation rate is proportional to the current pressure difference. The first inflation rate can be 50 torr / s, and the second inflation rate can be 10 torr / s. When the internal and external pressure difference is less than the third preset value (e.g., 20 torr), the inflation rate is reduced from 50 torr / s to 10 torr / s. Further, when the internal and external pressure difference is less than or equal to the second preset value (e.g., 5 torr), the inflation rate is reduced from 10 torr / s to 0. In other words, in this embodiment of the present disclosure, during the process of switching from a high pressure difference between the adsorption chamber and the external environment to a pressure balance, the gas control component 30 gradually reduces the inflation rate as the pressure difference decreases. This results in a smoother pressure change curve within the groove 21 of the laser penetration plate 20, effectively suppressing pressure overshoot, reducing stress impact on the laser penetration plate, and significantly extending the service life of the laser penetration plate 20.

[0040] Some embodiments of this disclosure, with reference to Figure 4 The gas control component 30 includes a first controller 31, a first gas pipeline 32, a first control valve 33, and a first sensor 34.

[0041] In this embodiment of the disclosure, reference is made to Figure 4 The first sensor 34, disposed within the groove 21, is configured to monitor the pressure difference between the adsorption chamber and the external environment. The first sensor 34 can be a differential pressure sensor.

[0042] In this embodiment of the disclosure, reference is made to Figure 4The first control valve 33 is connected to the adsorption chamber via the first gas pipe 32 and the adsorption orifice 22. For example, the first control valve 33 can be an MFC (Mass Flow Controller). The first control valve 33 is used to precisely control the mass flow rate of the gas (such as inert gas or reactive gas) entering the adsorption chamber. During the adsorption stage, the first control valve 33 can close the pneumatic valve 35 and work with devices such as a vacuum pump or negative pressure source to establish a negative pressure in the adsorption chamber. During the desorption stage, the first control valve 33 can open the pneumatic valve 35 to charge the adsorption chamber and balance the pressure to achieve desorption.

[0043] In this embodiment of the disclosure, reference is made to Figure 4 The first controller 31 is connected to the first sensor 34 and the first control valve 33. The first controller 31 is configured to control the inflation rate of the first control valve 33 based on the pressure difference transmitted by the first sensor 34. The first controller 31 can be a PID controller. In the pressure control of the adsorption chamber, the first controller 31 receives the real-time pressure difference signal from the first sensor 34, compares it with a first preset value (a second preset value or a third preset value), and adjusts the inflation flow rate of the first control valve 33 or the power of the suction pump to stabilize the pressure difference within the set range, thus preventing seal failure due to pressure fluctuations.

[0044] Figure 5 This is a schematic diagram of another optional laser-penetrating plate 20 provided in this embodiment of the present disclosure. It should be noted that... Figure 5 The laser penetrating plate 20 shown in the example only includes two grooves 21, but the laser penetrating plate 20 may also include a greater number of grooves 21.

[0045] Some embodiments of this disclosure, with reference to Figure 5 Multiple grooves 21 are concentrically distributed. For example, Figure 5 The two grooves 21 are arranged in a concentric rectangle. Thus, the grooves 21 are evenly arranged along the edge of the laser-penetrating plate 20, and after the grooves 21 contact the edge of the chamber body to form adsorption cavities, the positions of each adsorption cavity are symmetrically distributed. Therefore, the negative pressure formed by the vacuuming of the adsorption holes is evenly distributed across the entire contact edge between the laser-penetrating plate 20 and the chamber body, avoiding excessively strong or weak local adsorption forces. This ensures a tighter fit between the laser-penetrating plate 20 and the chamber body 10 when they contact each other, reducing gaps caused by uneven force, and thus preventing air leakage or impurities from entering and affecting process stability.

[0046] In this embodiment of the disclosure, reference is made to Figure 5The spacing between adjacent grooves is greater than the width of the groove opening. If the spacing between adjacent grooves 21 is too small, the distance between adjacent adsorption chambers will be too close, potentially causing airflow interference (such as overlapping negative pressure areas), leading to unstable local negative pressure and affecting the sealing effect. In this embodiment, the spacing between adjacent grooves is greater than the width of the groove opening, thus making the negative pressure field of each adsorption chamber more independent, stably maintaining its own adsorption force and ensuring reliable sealing. Simultaneously, this embodiment avoids the situation where the spacing between adjacent grooves is too small, resulting in excessively narrow groove sidewalls, preventing breakage due to stress during assembly (impact contact) or vacuuming, thus avoiding component damage.

[0047] In other embodiments, the laser-penetrating plate may be circular. Correspondingly, the multiple grooves provided on the edge of the circular laser-penetrating plate 20 may be distributed in a concentric ring pattern.

[0048] Figure 6 This is a schematic diagram of another optional process chamber 100 provided in this embodiment of the disclosure. It should be noted that... Figure 6 The laser penetrating plate 20 shown in the example can be understood with reference to the above embodiments, and will not be repeated here. Figure 4 The example of the first gas conduit 32 includes Figure 6 The gas supply pipes 320 are connected to an adsorption port. Figure 6 The illustrated second gas conduit 36 ​​may include a chamber inlet pipe 321 and a chamber outlet pipe 322. The chamber inlet pipe 321 and the chamber outlet pipe 322 may be connected to... Figure 4 The first control valve 33 in the middle.

[0049] In some embodiments of this disclosure, the gas control assembly is connected to the chamber body. The gas control assembly is also configured to introduce an inert gas into the chamber body. For example, as... Figure 6As shown, the chamber inlet pipe 321 and chamber outlet pipe 322 of the gas control component are respectively connected to the chamber body 10, forming a gas flow path within the chamber body 10. After the laser penetrating plate 20 is adsorbed onto the chamber body 10, the gas control component can deliver inert gases such as nitrogen (N2) into the inner cavity 11 of the chamber body 10 through the chamber inlet pipe 321. Subsequently, these inert gases are discharged from the chamber body 10 through the chamber outlet pipe 322. In this way, the embodiments of this disclosure can effectively create and maintain a suitable process environment inside the chamber body 10 through the gas control component. For example, the inert gas can isolate air, preventing the wafer to be annealed from reacting with oxygen in the air and being oxidized during processing, providing reliable environmental support for the smooth progress of processes such as laser annealing. At the same time, the embodiments of this disclosure can reuse the gas control component to maintain a suitable process environment inside the chamber body 10, eliminating the need for additional gas control components to maintain a suitable process environment inside the chamber body 10, reducing costs and improving the production efficiency of the gas control component utilization.

[0050] In this embodiment of the disclosure, reference is made to Figure 6 When the process chamber 100 is not in operation, the gas inside the chamber body 10 is introduced into the adsorption holes. For example, the chamber outlet pipe 322 can be connected to multiple gas supply pipes 320, and the gas control component can introduce the gas inside the chamber body 10 into the adsorption holes. Thus, this disclosure enables the reuse of the gas inside the process chamber 100 for the desorption of the laser penetrating plate 20, reducing gas waste and improving production efficiency.

[0051] Figure 7 This is a schematic diagram of the structure of an optional semiconductor device 200 provided in an embodiment of this disclosure.

[0052] This disclosure provides a semiconductor device 200, with reference to... Figure 7 The semiconductor device 200 includes a laser 210 and a process chamber 100 according to any of the above embodiments. The laser emitted by the laser 210 passes through a laser penetrating plate and enters the process chamber 100 to perform laser annealing on the wafer to be annealed in the process chamber 100.

[0053] Figure 8 This is a schematic diagram of another optional semiconductor structure provided in the embodiments of this disclosure.

[0054] Some embodiments of this disclosure, with reference to Figure 8The semiconductor device 200 also includes a temperature control component 220. The temperature control component 220 is configured to monitor the temperature within the process chamber in real time. A gas control component 30, connected to the temperature control component 220, is configured to adjust the pressure difference between the adsorption chamber and the external environment based on the temperature within the process chamber 100. The pressure difference in the adsorption chamber is the core driving force for fixing the wafer (e.g., through negative pressure adsorption). Laser annealing causes thermal expansion of the gas within the chamber, which may indirectly affect the pressure balance of the adsorption chamber. Therefore, after the temperature control component 220 captures temperature changes in real time, the gas control component adjusts the pressure difference (e.g., appropriately increasing the negative pressure when the temperature rises to offset the decrease in adsorption force caused by thermal expansion), ensuring that the wafer remains tightly attached to the carrier component. This avoids "laser action position shift" caused by loose adsorption (e.g., misalignment of the annealing area caused by minute wafer displacement), thus improving annealing accuracy.

[0055] Some embodiments of this disclosure, with reference to Figure 8 The semiconductor device 200 also includes a carrier component 310 and a driving component 320. The carrier component 310, disposed within the process chamber 100, is configured to carry the wafer 40 to be annealed. The driving component 320, disposed within the process chamber 100 and connected to the carrier component 310, is configured to drive the carrier component 310 to move within the process chamber 100, adjusting the position of the carrier component 310 relative to the laser 210. Laser annealing may require processing a specific area (such as local repair of a chip array) or the entire wafer (such as activation of the entire wafer). The driving component 320 can drive the carrier component 310 to achieve translation, rotation, and other movements. Combined with the optical path control of the laser 210, it can precisely adjust the alignment of the laser's point of action with the target area of ​​the wafer (positioning accuracy down to the micrometer level), avoiding errors from manual adjustments and meeting the requirements of high-precision semiconductor processes. The movement range of the driving component 320 can flexibly adapt to the carrying requirements of wafers of different sizes.

[0056] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0057] The sequence numbers of the embodiments in this application are for descriptive purposes only and do not represent the superiority or inferiority of the embodiments. The methods disclosed in the several method embodiments provided in this application can be arbitrarily combined to obtain new method embodiments without conflict. The features disclosed in the several product embodiments provided in this application can be arbitrarily combined to obtain new product embodiments without conflict. The features disclosed in the several method or device embodiments provided in this application can be arbitrarily combined to obtain new method or device embodiments without conflict.

[0058] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application.

Claims

1. A process chamber, characterized in that, include: The chamber body, the laser penetration plate, and the gas control assembly; among which, The laser penetrating plate includes: multiple grooves and multiple adsorption holes; wherein, all of the multiple grooves are disposed on the edge of the laser penetrating plate; and each groove is provided with at least one adsorption hole; When the chamber body and the laser penetrating plate are in contact with each other, the multiple grooves contact the edge of the chamber body and form multiple adsorption cavities; The gas control component is connected to the plurality of adsorption chambers and is configured to control the gas pressure in the plurality of adsorption chambers.

2. The process chamber according to claim 1, characterized in that, The gas control component is configured to, when the process chamber is in operation, discharge the gas from the adsorption chamber until the pressure difference between the adsorption chamber and the external environment exceeds a first preset value; or... When the process chamber is not in operation, gas is introduced into the adsorption chamber until the pressure difference between the adsorption chamber and the external environment is less than a second preset value.

3. The process chamber according to claim 2, characterized in that, The gas control component is configured to adjust the first inflation rate to a second inflation rate when the pressure difference between the adsorption chamber and the external environment is less than a third preset value; wherein, The first inflation rate is greater than the second inflation rate; the third preset value is greater than the second preset value and less than the first preset value.

4. The process chamber according to claim 1, characterized in that, The gas control assembly includes: a first controller, a first gas pipeline, a first control valve, and a first sensor; wherein, The first sensor, disposed within the trench, is configured to monitor the pressure difference between the adsorption chamber and the external environment; The first control valve is connected to the adsorption chamber through the first gas pipe and the adsorption hole; The first controller, which is connected to the first sensor and the first control valve respectively, is configured to control the inflation rate of the first control valve based on the air pressure difference transmitted by the first sensor.

5. The process chamber according to claim 1, characterized in that, The gas control component, connected to the chamber body, is also configured to introduce an inert gas into the chamber body, and, when the process chamber is in operation, to introduce the gas inside the chamber body into the adsorption pore.

6. The process chamber according to claim 1, characterized in that, The multiple grooves are distributed concentrically; the distance between adjacent grooves is greater than the width of the opening end of the groove.

7. The process chamber according to claim 1, characterized in that, Multiple adsorption pores are symmetrically distributed in the multiple trenches.

8. A semiconductor device, characterized in that, include: The laser and the process chamber according to any one of claims 1 to 7; wherein, The laser emitted by the laser passes through the laser penetration plate and enters the process chamber, where it performs laser annealing on the wafer to be annealed.

9. The semiconductor device according to claim 8, characterized in that, The semiconductor device further includes: a temperature control component; The temperature control component is configured to monitor the temperature inside the process chamber in real time; The gas control component, connected to the temperature control component, is configured to adjust the pressure difference between the adsorption chamber and the external environment based on the temperature inside the process chamber.

10. The semiconductor device according to claim 8, characterized in that, The semiconductor device further includes: a carrier component and a driving component; wherein... The carrier component is disposed within the process chamber and configured to carry the wafer to be annealed; The drive assembly is disposed within the process chamber and connected to the carrier platform. It is configured to drive the carrier platform to move within the process chamber and adjust the position of the carrier platform relative to the laser.

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