Magnetoresistive random access memory and manufacturing method thereof

Abstract

The invention discloses a magnetoresistive random access memory (MRAM) and a manufacturing method thereof, and the manufacturing method of the magnetoresistive random access memory (MRAM) mainly comprises the following steps: forming a spin-orbit torque (SOT) layer on a substrate, forming a magnetic tunneling junction (MTJ) on the SOT layer, forming a first covering layer beside the MTJ, forming a second covering layer beside the MTJ, and forming a second covering layer beside the MTJ. Wherein the first covering layer has a first thickness and a second thickness.

Description

Technical Field

[0001] This invention relates to a magnetoresistive random access memory (MRAM) device and its fabrication method. Background Technology

[0002] Magnetoresistance (MR) is the effect of a material's resistance changing with the application of a magnetic field. Its physical quantity is defined as the rate of change of resistance, calculated by dividing the resistance difference (with and without a magnetic field) by the original resistance. Currently, the magnetoresistance effect has been successfully applied in hard drive manufacturing and has significant commercial value. Furthermore, utilizing the characteristic that giant magnetoresistance materials have different resistance values ​​under different magnetization states, magnetic random access memory (MRAM) can also be fabricated, which has the advantage of retaining stored data even when no power is applied.

[0003] The aforementioned magnetoresistive effect is also applied in the field of magnetic field sensing, such as in the electronic compass components of mobile phones that integrate with the Global Positioning System (GPS) to provide users with information such as their location. Currently, various magnetic field sensing technologies are available on the market, such as anisotropic magnetoresistive (AMR) sensing elements, giant magnetoresistive (GMR) sensing elements, and magnetic tunneling junction (MTJ) sensing elements. However, these existing technologies typically have drawbacks, including larger chip area, higher manufacturing costs, higher power consumption, insufficient sensitivity, and susceptibility to temperature changes, necessitating further improvements. Summary of the Invention

[0004] One embodiment of the present invention discloses a method for fabricating a magnetoresistive random access memory (MRAM) element, which mainly includes first forming a spinorbit torque (SOT) layer on a substrate, then forming a magnetic tunneling junction (MTJ) on the SOT layer, and then forming a first cover layer next to the MTJ, wherein the first cover layer includes a first thickness and a second thickness.

[0005] Another embodiment of the present invention discloses a magnetoresistive random access memory (MRAM) device, which mainly includes a spin-orbit torque (SOT) layer disposed on a substrate, a magnetic tunneling junction (MTJ) disposed on the SOT layer, and a first cover layer disposed next to the MTJ, wherein the first cover layer includes a first thickness and a second thickness. Attached Figure Description

[0006] Figures 1 to 8 This is a schematic diagram illustrating a method for fabricating an MRAM cell according to an embodiment of the present invention.

[0007] Symbol Explanation

[0008] 12: Base

[0009] 14: MRAM region

[0010] 40: Logical Region

[0011] 16: Interlayer dielectric layer

[0012] 18: Metal interconnect structure

[0013] 20: Metal interconnect structure

[0014] 22: Intermetallic dielectric layer

[0015] 24: Metal interconnects

[0016] 26: Stop Layer

[0017] 28: Intermetallic dielectric layer

[0018] 30: Metal interconnects

[0019] 32: Metal interconnects

[0020] 34: Barrier Layer

[0021] 36: Metal layer

[0022] 40: Logical Region

[0023] 42: Lower electrode

[0024] 44: SOT layer

[0025] 46: Free Layer

[0026] 48: Barrier Layer

[0027] 50: Fixed layer

[0028] 60: Covering layer

[0029] 62: Upper electrode

[0030] 64: Dielectric layer

[0031] 66: MTJ stacked structure

[0032] 70:MTJ

[0033] 72: First covering layer

[0034] 74: First Oxide Layer

[0035] 76: Bottom anti-reflective layer

[0036] 78: Patterned Mask

[0037] 80: Second covering layer

[0038] 84: Second oxide layer

[0039] 86: Metal interconnects

[0040] 88: Stop Layer

[0041] 90: Intermetallic dielectric layer

[0042] 92: Metal interconnects

[0043] 94: Stop Layer

[0044] 96: Stepped section

[0045] 98: Second covering layer Detailed Implementation

[0046] Please refer to Figures 1 to 8 , Figures 1 to 8 This is a schematic diagram illustrating a method for fabricating a semiconductor element, or more specifically, an MRAM cell, according to an embodiment of the present invention in a direction such as the Y direction. Figure 1 As shown, a substrate 12 is first provided, for example, a substrate 12 made of semiconductor material, wherein the semiconductor material may be selected from the group consisting of silicon, germanium, silicon-germanium composite, silicon carbide, gallium arsenide, etc., and an MRAM region 14 and a logic region 40 are preferably defined on the substrate 12.

[0047] The substrate 12 may contain active (active) devices such as metal-oxide-semiconductor (MOS) transistors, passive (passive) devices, conductive layers, and dielectric layers such as interlayer dielectric (ILD) 16 covering it. More specifically, the substrate 12 may contain planar or non-planar (such as fin structure transistors) MOS transistor devices, wherein the MOS transistors may include gate structures (such as metal gates) and source / drain regions, spacers, epitaxial layers, contact hole etch stop layers, and other transistor elements. The interlayer dielectric layer 16 may be disposed on the substrate 12 and cover the MOS transistors, and the interlayer dielectric layer 16 may have multiple contact plugs electrically connecting the gate and / or source / drain regions of the MOS transistors. Since the fabrication processes of planar or non-planar transistors and interlayer dielectric layers are well known in the art, they will not be described in detail here.

[0048] Then, metal interconnect structures 18 and 20 are sequentially formed on the interlayer dielectric layer 16 of the MRAM region 14 to electrically connect the aforementioned contact plugs. The metal interconnect structure 18 includes an intermetallic dielectric layer 22 and metal interconnects 24 embedded in the intermetallic dielectric layer 22. The metal interconnect structure 20 includes a stop layer 26, an intermetallic dielectric layer 28, and multiple metal interconnects 30 and 32 embedded in the stop layer 26 and the intermetallic dielectric layer 28. It should be noted that, compared to the MRAM region 14 having metal interconnects 24, 30, and 32 simultaneously, the logic region 40 at this stage only has metal interconnects 24 within the intermetallic dielectric layer 22, but no metal interconnects within the intermetallic dielectric layer 28.

[0049] In this embodiment, each metal interconnect 24 in the metal interconnect structure 18 preferably includes a trench conductor, and the metal interconnects 30 and 32 in the metal interconnect structure 20 include a via conductor. Furthermore, each metal interconnect 24, 30, and 32 in the metal interconnect structures 18 and 20 can be embedded in the intermetallic dielectric layers 22 and 28 and / or the stop layer 26 using a single damascene fabrication process or a double damascene fabrication process and electrically connected to each other. For example, each metal interconnect 24, 30, and 32 may further include a barrier layer 34 and a metal layer 36. The barrier layer 34 may be selected from the group consisting of titanium (Ti), titanium nitride (TiN), tantalum (Ta), and tantalum nitride (TaN), while the metal layer 36 may be selected from the group consisting of tungsten (W), copper (Cu), aluminum (Al), titanium-aluminum alloy (TiAl), cobalt tungsten phosphide (CoWP), etc., but is not limited to these. Since single-mount or double-mount fabrication processes are well known in the art, they will not be described in detail here. Furthermore, in this example, the metal layer 36 in the metal interconnect 24 preferably contains copper, the metal layer 36 in the metal interconnects 30 and 32 preferably contains tungsten, the intermetallic dielectric layers 22 and 28 preferably contain silicon oxide or an ultra-low dielectric constant dielectric layer, and the stop layer 26 contains a nitrogen-doped carbide (NDC), silicon nitride, or silicon carbon nitride (SiCN), but is not limited thereto.

[0050] Next, a selective lower electrode 42, a spin orbit torque (SOT) layer 44, an MTJ stack structure 66, a cover layer 60, and a patterned upper electrode 62 are formed on the metal interconnect structure 20. In this embodiment, the MTJ stack structure 66 can be formed by sequentially forming a free layer 46, a barrier layer 48, a reference layer (not shown), a spacer layer (not shown), and a pinned layer 50 on the SOT layer 44. The free layer 46 can be made of a ferromagnetic material, such as iron, cobalt, nickel, or their alloys such as cobalt-iron-boron (CoFeB), but is not limited thereto, and the magnetization direction of the free layer 46 can be "freely" changed by an external magnetic field. The barrier layer 48 can be made of an insulating material containing oxides, such as aluminum oxide (AlO). x It can be magnesium oxide (MgO) or magnesium oxide (MgO), but is not limited to these.

[0051] The reference layer is preferably disposed between the barrier layer 48 and the spacer layer, and may contain ferromagnetic materials, such as iron, cobalt, nickel, or their alloys such as cobalt-iron-boron (CoFeB), but is not limited thereto. The spacer layer contains a non-magnetic layer made of a non-magnetic material, such as a group consisting of ruthenium, iridium, and rhodium.

[0052] The fixing layer 50 may contain ferromagnetic materials such as, but not limited to, cobalt-iron-boron (CoFeB), cobalt-iron (CoFe), iron (Fe), and cobalt (Co). Alternatively, the fixing layer 50 may also be composed of antiferromagnetic (AFM) materials, such as iron-manganese (FeMn), platinum-manganese (PtMn), iridium-manganese (IrMn), and nickel oxide (NiO), to fix or restrict the magnetic moment direction of adjacent layers. In detail, the fixing layer 50 may include a lower synthetic antiferromagnetic (SAF) layer, a coupling layer, and an upper synthetic antiferromagnetic layer. The lower and upper synthetic antiferromagnetic layers may contain the same or different materials, and both may contain ferromagnetic materials such as cobalt (Co), nickel (Ni), platinum (Pt), palladium (Pd), or combinations thereof. The coupling layer preferably contains materials that can provide mechanical and / or lattice structure support for the lower and upper synthetic antiferromagnetic layers, such as ruthenium (Ru), tantalum (Ta), gadolinium (Gd), platinum (Pt), hafnium (Hf), or combinations thereof.

[0053] In this embodiment, the selective electrode 42 preferably comprises a conductive material, such as, but not limited to, tantalum (Ta), tantalum nitride (TaN), platinum (Pt), copper (Cu), gold (Au), and aluminum (Al). The SOT layer 44 preferably serves as a channel for a spinorbit torque (SOT) MRAM, therefore its material may include tantalum (Ta), tungsten (W), platinum (Pt), hafnium (Hf), and bismuth selenide (Bi). x Se 1-x The shielding layer 60 preferably contains a metal such as ruthenium, and the upper electrode 62 may contain a conductive or dielectric material such as, but not limited to, tantalum (Ta), tantalum nitride (TaN), titanium (Ti), titanium nitride (TiN), platinum (Pt), copper (Cu), gold (Au), aluminum (Al), or combinations thereof.

[0054] In addition, in this embodiment, the patterned upper electrode 62 can be formed by forming a dielectric layer 64 made of silicon oxide on the unpatterned upper electrode 62, and then using a patterned mask (not shown), such as a patterned photoresist, to remove part of the dielectric layer 64 and the upper electrode 62 by means of, for example, reactive ion etching (RIE) to form a patterned dielectric layer 64 and a patterned upper electrode 62, and then selectively removing the dielectric layer 64 made of silicon oxide.

[0055] like Figure 2 As shown, a patterned dielectric layer 64 or a patterned top electrode 62 can then be used as a mask to remove part of the masking layer 60, part of the MTJ stack structure 66, and even part of the SOT layer 44 of the MRAM region 14 to form the MTJ 70. Then, a first masking layer 72 and a first oxide layer 74 are sequentially formed on the MTJ 70. Preferably, the MTJ stack structure 66 of the logic region 40 is completely removed at this stage, and in this embodiment, the etching process parameters are preferably adjusted in the aforementioned patterning process so that the top surface of the top electrode 62 directly above the MTJ 70 is curved. Since the top surface of the top electrode 62 is curved, the top surface of the first masking layer 72 disposed thereon is also preferably curved.

[0056] In this embodiment, the first masking layer 72 preferably comprises silicon nitride, while the first oxide layer 74 comprises silicon oxide such as tetraethoxysilane (TEOS). It should be noted that when forming the MTJ 70 by patterning the MTJ stack structure 66 using the patterned upper electrode 62 in this stage, a portion of the SOT layer 44 can be selectively removed, so that the top surfaces of the remaining SOT layers 44 on both sides of the MTJ 70 are slightly lower than the top surface of the SOT layer 44 directly below the MTJ 70. According to another embodiment of the present invention, if no SOT layer 44 is removed during the formation of the MTJ 70, the top surfaces of the remaining SOT layers 44 on both sides of the MTJ 70 are preferably flush with the top surface of the SOT layer 44 directly below the MTJ 70. Furthermore, the first masking layer 72 and the first oxide layer 74 formed in this stage are preferably simultaneously disposed on the MRAM region 14 and the logic region 40.

[0057] like Figures 3 to 4As shown, a bottom anti-reflective coating (BARC) 76 can be formed on the first oxide layer 74. Then, an etching process is performed using a patterned mask 78, such as a patterned photoresist mask. For example, another RIE process can be used to remove part of the bottom anti-reflective coating 76, part of the first oxide layer 74, and all of the bottom anti-reflective coating 76 and first oxide layer 74 in the logic region 40, exposing the underlying first masking layer 72. This leaves the remaining first oxide layer 74 only in the MRAM region 14, but the underlying first masking layer 72 is still simultaneously located in both the MRAM region 14 and the logic region 40. Then, the bottom anti-reflective coating 76 can be removed to expose the first oxide layer 74 in the MRAM region 14.

[0058] Subsequently, as Figure 5 As shown, an etching process can be performed without forming an additional patterned mask. For example, an ion beam etching (IBE) process, different from the one described above, can be used to remove part of the first oxide layer 74, part of the first masking layer 72, part of the SOT layer 44, part of the lower electrode 42, and even part of the intermetallic dielectric layer 28 of the MRAM region 14, as well as all the first masking layers 72, all the SOT layers 44, all the lower electrodes 42, and part of the intermetallic dielectric layer 28 of the logic region 40. This causes the left and right sidewalls of the first masking layer 72, SOT layer 44, lower electrode 42, and even part of the intermetallic dielectric layer 28 of the MRAM region 14 to be slightly recessed and can be selectively aligned with the sidewalls of the metal interconnect 32. The top surface of the remaining intermetallic dielectric layer 28 of the logic region 40 can be selectively slightly lower than the top surface of the intermetallic dielectric layer 28 of the MRAM region 14.

[0059] It should be noted that during the IBE fabrication process in this stage, when removing part of the first oxide layer 74 and part of the first masking layer 72 in the MRAM region 14, the top surface of the remaining first oxide layer 74 is preferably slightly lower than the top surface of the first masking layer 72. Simultaneously, the first masking layers 72 on both sides of the MTJ 70 form stepped portions 96 comprising a first thickness T1 and a second thickness T2. The first thickness T1 is located above the intermetallic dielectric layers 28 on both sides of the MTJ 70, while the second thickness T2 is located directly above the metal interconnects 30 and 32 near the edge of the MRAM region 14. In this embodiment, the second thickness T2 is slightly smaller than the first thickness T1; for example, the second thickness T2 is approximately 50-80% of the first thickness T1.

[0060] A second masking layer 80 is then formed on the first masking layer 72, the first oxide layer 74, and the intermetallic dielectric layer 28. Preferably, the second masking layer 80 covers the top surface of the first masking layer 72, the top surface of the first oxide layer 74, the sidewalls of the first oxide layer 74, the sidewalls of the first masking layer 72, the sidewalls of the SOT layer 44, the sidewalls of the lower electrode 42, and the top surface of the intermetallic dielectric layer 28. In this embodiment, the first masking layer 72 and the second masking layer 80 preferably contain the same material, for example, both preferably contain silicon nitride. Because the portion of the intermetallic dielectric layer 28 adjacent to the metal interconnects 30 and 32 is simultaneously removed by the IBE fabrication process, the bottom surface of the formed second masking layer 80 is preferably slightly lower than the bottom surface of the first masking layer 72.

[0061] Then as Figure 6 As shown, an etching process can be performed without forming a patterned mask to remove part of the second masking layer 80 of the MRAM region 14 and all the second masking layers 80 of the logic region 40, exposing the top surface of the intermetallic dielectric layer 28. Preferably, the second masking layer 80 is divided into multiple second masking layers 98 at this stage and disposed on the first thickness T1 and the second thickness T2 of the first masking layer 72 and the sidewall of the first masking layer 74.

[0062] Subsequently, as Figure 7 As shown, a second oxide layer 84 is first formed in the MRAM region 14 and the logic region 40. A planarization process, such as chemical mechanical polishing (CMP), is used to remove part of the second oxide layer 84. Then, a pattern transfer process is performed. For example, a patterned mask can be used to remove part of the second oxide layer 84 and part of the first masking layer 72 in the MRAM region 14, and part of the second oxide layer 84, part of the intermetallic dielectric layer 28, and part of the stop layer 26 in the logic region 40 to form contact holes (not shown) and expose the underlying upper electrode 62 and the metal interconnect 24. Then, the contact holes are filled with the desired conductive material, such as a barrier layer containing titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), etc., and a low-resistance metal layer selected from low-resistance materials or combinations thereof, such as tungsten (W), copper (Cu), aluminum (Al), titanium-aluminum alloy (TiAl), cobalt-tungsten phosphide (CoWP), etc. Next, a planarization process is performed, such as chemical mechanical polishing, to remove some of the conductive material to form a metal interconnect 86 that electrically connects the electrode 62 and the metal interconnect 24 within the contact hole. Then, a stop layer 88 is formed on the metal interconnect 86.

[0063] In this embodiment, the first oxide layer 74 and the second oxide layer 84 preferably have different dielectric constants. The dielectric constant of the second oxide layer 84 is preferably lower than that of the first oxide layer 74. The dielectric constant of the first oxide layer 74 is preferably between 3.2 and 4.2, and the dielectric constant of the second oxide layer 84 is preferably between 2.4 and 2.8, or most preferably about 2.6. The ratio of the dielectric constant of the first oxide layer 74 to the dielectric constant of the second oxide layer 84 is preferably between 1.2 and 1.6. For example, in this embodiment, the first oxide layer 74 preferably comprises TEOS or silicon oxide, while the second oxide layer 84 preferably comprises an ultra-low dielectric constant dielectric layer, such as a porous dielectric material, for example, but not limited to silicon carbide (SiOC) or silicon carbide hydrogen (SiOCH).

[0064] Then as Figure 8 As shown, an intermetallic dielectric layer 90 is first formed on the stop layer 88 of the MRAM region 14 and the logic region 40. Then, a pattern transfer fabrication process is performed, for example, using a patterned mask (not shown) to remove part of the intermetallic dielectric layer 90 and part of the stop layer 88 to form contact holes (not shown) and expose the underlying metal interconnects 86. Next, the contact holes are filled with the desired conductive material, such as a barrier layer material including titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), etc., and a low-resistance metal layer selected from low-resistance materials or combinations thereof, such as tungsten (W), copper (Cu), aluminum (Al), titanium-aluminum alloy (TiAl), cobalt tungsten phosphide (CoWP), etc. Then, a planarization fabrication process is performed, for example, using a chemical mechanical polishing process to remove part of the metal material to form contact plugs or metal interconnects 92 electrically connecting the metal interconnects 86 within the contact holes. Finally, a stop layer 94 is selectively formed on the metal interconnects 92. In this embodiment, the intermetallic dielectric layer 90 preferably includes an ultra-low dielectric constant dielectric layer, which may include, for example, a porous dielectric material such as, but not limited to, silicon carbide (SiOC) or silicon carbide hydrogen (SiOCH).

[0065] In summary, this invention mainly discloses a method for fabricating SOT MRAM devices and its related structures. The method primarily involves first forming an SOT layer 44 and an MTJ 70 on a substrate, then forming a first masking layer 72 and a second masking layer 98 next to the MTJ. Since the upper electrode 62 directly above the MTJ has a curved surface, the first masking layer 72, subsequently disposed on the sidewall of the MTJ, preferably includes at least two different thicknesses: a first thickness T1 located above the intermetallic dielectric layers 28 on both sides of the MTJ 70, and a second thickness T2 located directly above the metal interconnects 30 and 32. Furthermore, the second masking layer 80, originally continuously covering the first masking layer 72 and the first oxide layer 74, is preferably divided into multiple second masking layers 98 during the etching process and disposed on the first thickness T1 and the second thickness T2 of the first masking layer 72. According to a preferred embodiment of this invention, this configuration allows for the subsequent filling of more second oxide layers 84 with lower dielectric constants next to the MTJ, thereby improving the insulation capability between devices.

[0066] The above description is only a preferred embodiment of the present invention. All equivalent changes and modifications made in accordance with the claims of the present invention should be included within the scope of the present invention.

Claims

1. A method for manufacturing a magnetoresistive random access memory element, characterized in that, Include: A spin-orbit torque layer is formed on the substrate; A magnetic tunneling junction is formed on the spin-orbit torque layer; and A first shielding layer is formed next to the magnetic tunnel junction, wherein the first shielding layer includes a first thickness and a second thickness.

2. The method of claim 1, wherein the substrate comprises a magnetoresistive random access memory region and a logic region, the method further comprising: An intermetallic dielectric layer is formed on the substrate; A first metal interconnect and a second metal interconnect are formed within the intermetallic dielectric layer; The spin-orbit torque layer is formed on the first metal interconnect and the second metal interconnect; An upper electrode is formed on the magnetic tunnel junction; The first covering layer is formed on the magnetic tunneling junction and the spin-orbit torque layer; A first oxide layer is formed on the first masking layer of the magnetoresistive random access memory region and the logic region; The first etching process is performed to remove the first oxide layer in the logic region; A second covering layer is formed on the first covering layer and the first oxide layer; A second etching process is performed to remove the second masking layer from the logic region; as well as A second oxide layer is formed on the first oxide layer and the second covering layer.

3. The method of claim 2, wherein the top surface of the upper electrode comprises a curved surface.

4. The method of claim 2, wherein the first thickness is located on the intermetallic dielectric layer and the second thickness is located on the first metal interconnect.

5. The method of claim 4, wherein the second thickness is less than the first thickness.

6. The method of claim 2, wherein the bottom surface of the second cover layer is lower than the bottom surface of the first cover layer.

7. The method of claim 2, wherein the first oxide layer and the second oxide layer comprise different dielectric constants.

8. The method of claim 2, wherein the dielectric constant of the second oxide layer is less than the dielectric constant of the first oxide layer.

9. A magnetoresistive random access memory (MRAM) device, characterized in that, Include: A spin orbit torque (SOT) layer is disposed on the substrate; A magnetic tunneling junction (MTJ) is located on the spin-orbit torque layer; as well as A first shielding layer is disposed next to the magnetic tunnel junction, wherein the first shielding layer includes a first thickness and a second thickness.

10. The magnetoresistive random access memory element of claim 9, further comprising: An intermetallic dielectric layer is disposed on the substrate; The first metal interconnect and the second metal interconnect are disposed within the intermetal dielectric layer. The spin-orbit torque layer is disposed on the first metal interconnect and the second metal interconnect; The upper electrode is disposed on the magnetic tunnel junction; The first covering layer is disposed on the magnetic tunneling junction and the spin-orbit torque layer; A first oxide layer is disposed on the first covering layer; The second covering layer is disposed next to the first covering layer; as well as A second oxide layer is disposed on the first oxide layer and the second covering layer.

11. The magnetoresistive random access memory element of claim 10, wherein the top surface of the upper electrode comprises a curved surface.

12. The magnetoresistive random access memory element of claim 10, wherein the first thickness is located on the intermetallic dielectric layer and the second thickness is located on the first metal interconnect.

13. The magnetoresistive random access memory element of claim 12, wherein the second thickness is less than the first thickness.

14. The magnetoresistive random access memory element of claim 10, wherein the bottom surface of the second cover layer is lower than the bottom surface of the first cover layer.

15. The magnetoresistive random access memory element of claim 10, wherein the first oxide layer and the second oxide layer comprise different dielectric constants.

16. The magnetoresistive random access memory element of claim 10, wherein the dielectric constant of the second oxide layer is less than the dielectric constant of the first oxide layer.

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