A microwave plasma-enhanced atomic layer deposition (IPD) or microwave plasma-enhanced chemical vapor deposition (CVD) apparatus and process for achieving large-size uniform deposition.

Abstract

This invention relates to a microwave plasma-enhanced atomic layer deposition (IPD) or microwave plasma-enhanced chemical vapor deposition (CVD) apparatus and process for achieving large-size uniform thin film deposition. The apparatus includes a resonant waveguide cavity, a reaction chamber, a gas dispersion ring, a quartz isolation plate, and an antenna mesh ring. The upper cavity of the resonant waveguide cavity features a unique design. The gas dispersion ring is positioned on the outer periphery of the resonant waveguide cavity and is used to inject a uniform annular gas flow into the cavity. The quartz isolation plate is located within the resonant waveguide cavity and above the gas dispersion ring. The quartz isolation plate is used to generate uniformly distributed plasma by the microwave-excited gas ejected from the gas dispersion ring. The antenna mesh ring is located between the resonant waveguide cavity and the reaction chamber, below the quartz isolation plate, and has mesh openings. This design enables efficient coupling and transmission of microwave energy, thereby improving plasma density uniformity and meeting the requirements for high-quality uniform thin film deposition on large-area substrates of 8 inches and above.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor thin film deposition technology, specifically relating to a microwave plasma-enhanced atomic layer deposition or microwave plasma-enhanced chemical vapor deposition equipment and process for achieving large-size uniform deposition. Background Technology

[0002] Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) are both thin film deposition techniques based on gas-phase reactions, widely used in semiconductors, optoelectronic devices, solar cells, and display technologies. ALD achieves atomically precise thin film thickness control through alternating and self-limiting surface reaction processes, while CVD grows thin films through chemical reactions of gaseous precursors on the substrate surface. With the rapid development of the semiconductor and optoelectronic industries, higher demands are being placed on the uniformity and process efficiency of high-quality thin film deposition on large-size substrates.

[0003] Microwave Plasma Enhanced ALD / CVD (microwave ALD / CVD for short) is a novel thin film deposition technique that combines traditional ALD / CVD processes with microwave plasma technology. By generating high-density, highly reactive plasma through microwave field excitation, it effectively lowers the reaction temperature and increases the activity of the reaction precursors and the thin film deposition rate. Due to its significant low-temperature deposition advantage, microwave ALD / CVD is particularly suitable for applications involving heat-sensitive substrates or requiring low-temperature processing conditions, such as flexible electronics, OLEDs, and temperature-sensitive material coatings.

[0004] However, current microwave ALD / CVD technology still suffers from significant technical defects and bottlenecks. Especially when processing large-area substrates (e.g., 8 inches and above), the inherent distribution characteristics of microwave electromagnetic fields and the unreasonable design of waveguide cavity structures make it difficult to maintain uniformity in the thickness and quality of the deposited films on large-area substrates. This non-uniformity manifests primarily in significant differences in deposition rates and film characteristics between the center and edge regions, severely limiting the application scope and effectiveness of microwave ALD / CVD technology in the industrial production of large-size substrates. Furthermore, existing microwave waveguide cavity designs suffer from low microwave energy coupling efficiency, high power loss, and poor process stability, further reducing the production applicability and economic efficiency of microwave ALD / CVD technology.

[0005] Therefore, in order to address the problems of large-area uniform deposition in microwave ALD / CVD technology, it is urgent to develop a novel microwave power supply output structure and waveguide cavity design to overcome the shortcomings of existing technologies and achieve efficient, large-area uniform deposition in microwave ALD / CVD processes. Summary of the Invention

[0006] In view of the shortcomings of the prior art, the technical problem to be solved by the present invention is to provide a microwave plasma enhanced atomic layer deposition or microwave plasma enhanced chemical vapor deposition device for achieving large-size uniform deposition. By making special optimization designs on the microwave power supply output structure and waveguide cavity, it is possible to achieve efficient coupling and transmission of microwave energy, thereby significantly improving the density uniformity and stability of plasma, and meeting the requirements for high-quality uniform thin film deposition on large-area substrates of 8 inches and above.

[0007] To solve the above-mentioned technical problems, the technical solution adopted by the present invention is: a microwave plasma-enhanced atomic layer deposition or microwave plasma-enhanced chemical vapor deposition device for realizing large-size uniform deposition, comprising a resonant waveguide cavity, a reaction chamber, a gas dispersion ring, a quartz isolation plate and an antenna mesh ring, wherein the upper cavity of the resonant waveguide cavity is a cone shape with a smaller upper part and a smaller lower part, or an inner arc shape or a spherical shape that gradually increases in size from top to bottom;

[0008] The gas dispersion ring is disposed on the outer peripheral surface of the resonant waveguide cavity and is used to inject a uniform annular gas flow into the resonant waveguide cavity.

[0009] The quartz isolation plate is located inside the resonant waveguide cavity and above the gas dispersion ring. The quartz isolation plate is used to generate uniformly distributed plasma by the microwave-excited gas ejected from the gas dispersion ring that passes through the quartz isolation plate.

[0010] The antenna mesh ring is located between the resonant waveguide cavity and the reaction chamber and below the quartz isolation plate, and the antenna mesh ring has mesh holes.

[0011] Furthermore, the inner circumferential surface of the gas dispersion ring is formed with a plurality of spaced-apart air outlets, and the larger the diameter of the plurality of air outlets is as far away from the air inlet end of the gas dispersion ring.

[0012] Furthermore, the deposition apparatus also includes an upper body, which has a microwave inlet and an upper chamber. The upper surface of the upper chamber is either a cone shape with a smaller upper surface and a gradually increasing inner arc shape from top to bottom, and the upper chamber extends to the lower surface of the upper body.

[0013] Furthermore, a connecting ring is formed at the lower end of the upper seat, and an installation groove is formed on the lower surface of the upper seat, and the quartz isolation plate is installed in the installation groove.

[0014] Furthermore, the gas dispersion ring is disposed below the quartz isolation plate and its upper surface is sealed to the quartz isolation plate.

[0015] Furthermore, the deposition apparatus also includes an aluminum ring disposed below the gas dispersion ring, the gas dispersion ring and the aluminum ring being sealed together, and the upper surface of the aluminum ring being connected to the connecting ring via a connector.

[0016] Furthermore, a microwave plasma-enhanced atomic layer deposition or microwave plasma-enhanced chemical vapor deposition apparatus for achieving large-size uniform deposition also includes a reaction seat, wherein the reaction chamber is located inside the reaction seat, the reaction chamber has an upper opening, and the lower surface of the aluminum ring is fitted and sealed to the reaction seat.

[0017] Furthermore, a microwave plasma-enhanced atomic layer deposition or microwave plasma-enhanced chemical vapor deposition apparatus for achieving large-size uniform deposition also includes an annular mounting frame, which is fixedly connected to the lower surface of an aluminum ring. The annular mounting frame is located inside the upper opening, and the antenna mesh ring is detachably connected to the lower surface of the annular mounting frame.

[0018] Furthermore, a spectrometer interface is provided on the outer circumferential surface of the aluminum ring.

[0019] Furthermore, a microwave channel is provided at the top of the upper body, and a pre-stage tuning antenna is provided at the connection between the microwave channel and the upper cavity. The inner circumferential surface of the pre-stage tuning antenna changes diameter from top to bottom inward.

[0020] A microwave plasma-enhanced thin film deposition process for achieving large-size uniform deposition is disclosed, which utilizes a microwave plasma-enhanced atomic layer deposition (MPALD) or microwave plasma-enhanced chemical vapor deposition (CCVD) apparatus for large-size uniform deposition, and includes the following steps:

[0021] S1. Microwaves enter the upper chamber of the resonant waveguide cavity to form a uniform and stable field strength distribution;

[0022] S2. The gas dispersion ring uniformly injects the reactive gas into the resonant waveguide cavity to form a uniform annular gas flow layer.

[0023] S3. Microwave energy, after passing through the quartz isolation plate, excites the reactive gas in the annular gas flow layer to form a plasma with uniform spatial distribution.

[0024] S4. Microwave energy is radiated to the substrate at multiple points through the mesh on the antenna ring, achieving substrate thin film deposition of at least 8 inches in size.

[0025] Compared with the prior art, the present invention has the following beneficial effects:

[0026] 1. High-efficiency microwave energy coupling: By optimizing the microwave power supply output structure and designing the upper surface of the resonant waveguide cavity with a tapered shape that is larger at the top and smaller at the bottom or with an inner arc shape that gradually increases from top to bottom, unnecessary reflections and energy losses are reduced, achieving efficient transmission and coupling of microwave energy and effectively improving plasma excitation efficiency.

[0027] 2. Large-area uniform deposition: This invention is specifically designed for large-area substrates of 8 inches and above. By optimizing the field distribution in the upper chamber of the resonant waveguide cavity, high-density uniform plasma can be obtained on the surface of large-size substrates, significantly improving the uniformity of film thickness and properties.

[0028] 3. High process stability: After the formation of high-density uniform plasma, the fluctuations in the process are smaller, the film deposition rate and characteristics are more stable, and the production yield can be significantly improved.

[0029] 4. Reduce power loss: A reasonable microwave field distribution and waveguide cavity structure can reduce microwave reflection and resonant mode loss, reduce power waste, and lower process operating costs.

[0030] 5. Adaptable to various deposition processes: This invention is applicable to microwave ALD / CVD processes and can be flexibly adjusted to meet the process requirements of different chemical precursors and substrates, making it widely applicable in multiple application fields such as semiconductors, optoelectronics, and display panels.

[0031] 6. In this design, the gas dispersion ring is positioned between the upper body and the aluminum ring, and is locked to the aluminum ring via a connecting ring on the upper body. This locks the gas dispersion ring, unlike existing thin film deposition equipment which requires a separate flange for the gas dispersion ring. This eliminates the flange structure, significantly reducing the space required for plasma formation. Due to the smaller space, the gas dispersion ring achieves more uniform gas distribution and better performance during gas injection. Attached Figure Description

[0032] Figure 1 This is a three-dimensional structural diagram of the upper seat and the reaction seat in this invention;

[0033] Figure 2 This is a cross-sectional view of the upper seat and the reaction seat in this invention;

[0034] Figure 3 For the present invention Figure 2 A magnified schematic diagram of the local structure at point A;

[0035] Figure 4 This is a three-dimensional structural diagram of the ring mounting bracket and antenna mesh ring in this invention;

[0036] Figure 5This is a three-dimensional structural diagram of the gas dispersion ring in this invention;

[0037] Figure 6 This is a graph showing the intensity data of oxygen and argon spectral lines during plasma excitation in this invention.

[0038] The markings in the diagram are: 1. Upper body; 11. Resonant waveguide cavity; 111. Microwave inlet; 12. Connecting ring; 13. Connector; 14. Pre-stage tuning antenna; 2. Gas dispersion ring; 21. Vent; 3. Quartz isolation plate; 4. Antenna mesh ring; 41. Mesh; 5. Annular mounting bracket; 51. Pressure ring; 6. Response seat; 61. Response chamber; 7. Aluminum ring; 8. Microwave generator. Detailed Implementation

[0039] To make the above features and advantages of the present invention more apparent and understandable, specific embodiments are described below in conjunction with the accompanying drawings for detailed explanation.

[0040] like Figures 1-5 As shown, this embodiment provides a microwave plasma-enhanced atomic layer deposition or microwave plasma-enhanced chemical vapor deposition apparatus for achieving large-size uniform deposition, including an upper body 1, a gas dispersion ring 2, a quartz isolation plate 3, an antenna mesh ring 4, an aluminum ring 7, an annular mounting frame 5, and a reaction seat 6.

[0041] The upper body 1 has a microwave inlet 111 for connecting to the microwave generator 8. The microwave generator 8 is an existing structure and will not be described in detail here. A resonant waveguide cavity 11 is formed inside the upper body 1. The upper surface of the upper cavity of the resonant waveguide cavity 11 is either a cone shape with the upper part smaller than the lower part, or an inner arc shape that gradually increases in size from top to bottom. Either one is acceptable. In this embodiment, the cone shape with the upper part smaller than the lower part is used. The resonant waveguide cavity 11 extends to the lower surface of the upper body 1.

[0042] The upper surface of the upper chamber adopts a conical, spherical, or multi-arc curvature design, with its radius of curvature R gradually increasing from the center to the outer periphery. Preferably, the radius of curvature R is 50-150 mm at the center of the cavity and 150-600 mm at the outer periphery. The curvature reduction method can be linear, piecewise, or quadratic curve reduction, and the reduction amount (ΔR) is preferably 100-500 mm. Taking linear reduction as an example, the radius of curvature R(x) satisfies: R(x) = R1 + (R2 – R1) × (x / L), where R1 is the central radius of curvature (50-150 mm), R2 is the outer periphery radius of curvature (150-600 mm), L is the cavity radius, and x is the distance from the center to the outer periphery. The above parameter range can ensure that the microwave field strength is uniformly distributed in a large-area (8 inches and above) cavity, effectively improving the plasma excitation efficiency and thin film deposition uniformity.

[0043] A microwave channel is located at the top of the upper body, and a pre-stage tuning antenna 14 is installed at the connection between the microwave channel and the upper cavity. Figure 2 As shown, the pre-stage tuning antenna 14 is part of the resonant waveguide cavity 11. The inner circumferential surface of the pre-stage tuning antenna 14 varies in diameter from top to bottom inwards, and the cavity wall is designed with a ring-shaped variable diameter structure that protrudes radially into the cavity. This variable diameter structure is stepped, arc-shaped, or conical. In this embodiment, it is a stepped ring shape, and its cross-section can be rectangular, arc-shaped, polygonal, or other geometric shapes. It is integrally formed with the cavity body or integrally machined, without the need for additional independent metal parts. The preferred parameters of the variable diameter structure are as follows: protrusion depth (i.e., the distance of the variable diameter protrusion into the cavity): 5–50 mm, preferably 10–40 mm; radial width of the protrusion structure: 10–80 mm, preferably 20–60 mm; inner diameter of the protrusion part: 10–80 mm, preferably 20–60 mm; thickness of the annular protrusion cross-section: 1–10 mm; shape of the variable diameter structure: can be circular, arc-shaped, polygonal, or other regular / irregular structures; material: the same metal as the cavity body, such as stainless steel, aluminum alloy, copper, etc.

[0044] The above structure optimizes microwave reflection, standing wave distribution, and energy coupling by changing the shape of the inner wall of the cavity, thereby effectively improving plasma excitation efficiency and distribution uniformity. All design schemes of the above-mentioned variable diameter structure are within the protection scope of this invention. A connecting ring 12 is formed at the lower end of the upper body 1, and a mounting groove is formed on the lower surface of the upper body 1, in which the quartz isolation plate 3 is installed.

[0045] The quartz isolation plate 3, serving as a microwave-transparent vacuum isolation interface, is made of high-purity quartz material, exhibiting extremely low microwave loss and excellent mechanical strength. In this design, the quartz isolation plate has a diameter of 270 mm (tolerance ±0.2 mm) and a thickness of 12 mm (tolerance ±0.1 mm). The surface of the quartz isolation plate must be chamfered, and both mirror surfaces must be free of scratches. This effectively blocks gas flow and pressure differences between the process cavity and the upper cavity of the resonant waveguide cavity 11, achieving complete vacuum isolation between the upper and lower chambers of the resonant waveguide cavity 11. Simultaneously, the quartz isolation plate 3 has excellent microwave permeability, ensuring that microwave energy can be transferred to the reaction area without loss for plasma excitation. The quartz plate also effectively blocks the impact of plasma, reactive species, and splashes generated in the reaction cavity on the upstream structure, ensuring the cleanliness of the equipment's interior and long-term stable operation.

[0046] The gas dispersion ring 2 is positioned below the quartz isolation plate 3, and its upper surface is sealed to the quartz isolation plate 3. Specifically, an O-groove is formed on the upper surface of the gas dispersion ring 2, and an O-ring is installed in the O-groove for sealing. Multiple spaced-apart air outlets 21 are formed on the inner circumferential surface of the gas dispersion ring 2, with the diameter of the outlets increasing as they are further away from the air inlet end of the gas dispersion ring 2.

[0047] Preferably, the number of air outlets is 10-200, uniformly distributed along the circumference of the gas dispersion ring. The diameter of each air outlet ranges from 0.2 mm to 5 mm, preferably from 0.5 mm to 3 mm. The air outlets can be set to a single size or increase in size from the inner radial direction to the outer radial direction of the ring, with an increment of 0.1 mm to 1 mm for each adjacent air outlet diameter. The width (or diameter) of the inner air passage ranges from 2 mm to 20 mm, preferably from 4 mm to 12 mm, to ensure gas flow rate and uniformity. The total open area ratio of the air outlets (total area of ​​air outlets / total area of ​​the inner circumferential surface of the ring) is preferably 3%-40%, and can be adjusted according to actual process requirements.

[0048] The core function of the gas dispersion ring 2 is to uniformly inject the reactant gas or precursor gas into the resonant waveguide cavity 11 through annularly distributed micropores or slits. This design effectively avoids localized excessively high or low gas concentrations within the cavity, ensuring uniform circumferential distribution of the injected gas along the cavity's 360° axis. This results in more consistent plasma generation and chemical reactions, significantly improving the thin film uniformity of 8-inch and larger large-area substrates. The aluminum ring 7 is coaxially assembled with the cavity, and its aperture, spacing, and open area ratio are all optimized to meet different flow rate and reaction requirements.

[0049] An aluminum ring 7 is positioned below the gas dispersion ring 2, and the gas dispersion ring 2 and the aluminum ring 7 are sealed together. Specifically, an O-groove is formed on the lower surface of the gas dispersion ring 2, and an O-ring is placed inside the O-groove for sealing. The inner edge of the aluminum ring 7 has an annular notch, and the gas dispersion ring 2 is fitted into the annular notch. The upper surface of the aluminum ring 7 is connected to the connecting ring 12 via a connector 13, which is a bolt. The connecting ring 13 locks the connecting ring 12 on the upper seat 1 and the aluminum ring 7 together, thereby locking the gas dispersion ring 2. Compared to existing thin film deposition equipment, which requires a separate flange to install the gas dispersion ring 2, this solution eliminates the flange structure, greatly reducing the space required for plasma formation. Due to the smaller space, the gas dispersion ring 2 achieves more uniform gas distribution and better results when injecting gas.

[0050] The reaction chamber 61 is located inside the reaction seat 6. The reaction chamber 61 has an upper opening. The lower surface of the aluminum ring 7 is in contact with the reaction seat 6 and is sealed. An O-groove is formed in the area where the lower surface of the aluminum ring 7 is in contact with the reaction seat 6. An O-ring is provided in the O-groove. The aluminum ring 7 is connected to the upper surface of the reaction seat 6 by screws.

[0051] The annular mounting bracket 5 is fixedly connected to the lower surface of the aluminum ring 7 by screws. The annular mounting bracket 5 is located inside the upper opening of the reaction chamber 61. The antenna mesh ring 4 is detachably connected to the lower surface of the annular mounting bracket 5. Specifically, a pressure ring 51 is formed below the annular mounting bracket 5. The pressure ring 51 is connected to the annular mounting bracket 5 through an extension plate. The antenna mesh ring 4 is installed between the pressure ring 51 and the annular mounting bracket 5.

[0052] The antenna ring 4 is located between the resonant waveguide cavity 11 and the reaction chamber 61 and below the quartz isolation plate 3. The antenna ring 4 has mesh holes 41 formed on it.

[0053] Antenna mesh rings can be made by weaving or punching wires of highly conductive and corrosion-resistant metals such as stainless steel (e.g., SUS304), aluminum, copper, nickel, molybdenum, and tantalum. SUS304 stainless steel is the preferred material, but aluminum, copper and its alloys, and nickel-based alloys can also be used.

[0054] The aperture shape of the antenna mesh ring can be circular, square, hexagonal, or other polygonal. The preferred aperture range is 0.5 mm to 6 mm, more preferably 1 mm to 5 mm. When the antenna mesh ring is made of woven wire, the wire diameter ranges from 0.05 mm to 1 mm, preferably 0.1 mm to 0.8 mm. The mesh opening ratio (open area / transmittance) is preferably 40% to 80%. The mesh density ranges from 2 to 30 meshes / inch, preferably 4 to 20 meshes / inch.

[0055] The mesh arrangement can be either a regular or irregular array. The specific arrangement can be customized based on the cavity diameter, microwave wavelength, and deposition area requirements. The mesh ring can be made detachable for easy replacement and maintenance.

[0056] Antenna mesh rings can be manufactured using various metal processing methods, including but not limited to wire braiding, sheet punching, laser cutting, wire electrical discharge machining (EDM), chemical etching, and expanded metal stamping. Wire braiding can be used to create high-strength, highly flexible mesh structures; sheet punching, laser cutting, EDM, or chemical etching can achieve high-precision regular or irregular array hole shapes. Expanded metal stamping can obtain a continuous, solder-free, integrated mesh structure. All of the above processing methods can be selected or combined according to actual application requirements, and all fall within the scope of this invention.

[0057] The antenna mesh ring 4 is positioned between the resonant waveguide cavity 11 and the reaction cavity. Its main function is to uniformly radiate microwave energy from the main waveguide to the reaction cavity in a multi-point manner, thereby further improving the spatial distribution uniformity of the plasma. The mesh ring is made of stainless steel (SUS304), possessing excellent mechanical strength and corrosion resistance. Through the design of the mesh aperture 41, it ensures smooth transmission of the electromagnetic field while shielding ions and electrons, protecting the quartz plate and other cavity components from direct plasma impact. Furthermore, the antenna mesh ring 4, through its equipotential connection with the cavity, effectively suppresses arc discharge, ensuring the safe and stable operation of the equipment. The mesh ring structure is detachable, facilitating subsequent maintenance and cleaning.

[0058] In this embodiment, as Figure 2 As shown, the area enclosed from the microwave inlet 111 of the upper body 1 to the upper surface of the antenna mesh ring 4 forms the resonant waveguide cavity 11, and the area enclosed between the quartz isolation plate 3 and the upper surface of the antenna mesh ring 4 forms the plasma forming cavity. The substrate is disposed within the reaction chamber 61 and located below the mesh 41.

[0059] In this design, the resonant waveguide cavity 11 provides a space for efficient coupling and uniform distribution of microwave energy. By designing the upper chamber of the resonant waveguide cavity 11 as either a cone shape with a smaller upper section and a gradually increasing inner arc shape from top to bottom, the excitation efficiency and spatial uniformity of the plasma are effectively improved. The electromagnetic field distribution inside the cavity is optimized, significantly reducing the field strength difference from the center to the edge, ensuring plasma density and thin film deposition uniformity on large-area substrates of 8 inches and above. Furthermore, the upper support 1 is made of a highly conductive metal material, which not only reduces microwave energy loss and reflection but also provides mechanical support and vacuum pressure bearing, helping to ensure the overall airtightness and structural strength of the cavity.

[0060] This embodiment also provides a microwave plasma-enhanced thin film deposition process for achieving large-size uniform deposition. The process utilizes a microwave plasma-enhanced atomic layer deposition (MPALD) or microwave plasma-enhanced chemical vapor deposition (CCVD) apparatus for large-size uniform deposition, and includes the following steps:

[0061] S1. Microwaves enter the upper chamber of the resonant waveguide cavity 11 to form a uniform and stable field strength distribution;

[0062] S2. Gas dispersion ring 2 uniformly injects reaction gas into the resonant waveguide cavity 11 to form a uniform annular airflow layer;

[0063] S3. Microwave energy passes through the quartz isolation plate 3 and excites the reactive gas in the annular gas flow layer to form a plasma with uniform spatial distribution.

[0064] S4. Microwave energy is transmitted through the mesh 41 on the antenna ring 4 to radiate the substrate at multiple points, thereby achieving substrate thin film deposition of at least 8 inches in size.

[0065] The specific steps are as follows:

[0066] S1. Microwave energy input: Microwaves are input from the top of the upper body 1, pass through microwave inlet 111, and connect to the external microwave generator 8. The microwave energy passes through the upper cavity of the resonant waveguide cavity 11, exciting the formation of a stable electromagnetic field distribution within the cavity.

[0067] S2. Gas injection: The reactant gas or precursor gas is input through the gas inlet located on the side of the equipment. It first enters the inner gas channel of the gas dispersion ring 2, and is then injected into the inner cavity of the resonant waveguide cavity 11 in a uniform ring shape through the evenly distributed gas outlets 21, forming a uniform airflow.

[0068] S3. Plasma excitation: Microwave energy passes through the quartz isolation plate 3 and excites the injected gas in the plasma forming cavity between the resonant waveguide cavity 11 and the reaction chamber 61, generating a high-density and uniformly distributed plasma.

[0069] This system supports a wide range of alumina thin film deposition parameters, covering the following process windows: precursor temperature: 20-35℃; substrate temperature: 180-300℃; N2 gas flow rate: 50-200 sccm; TMA pulse time: 0.05-0.2; TMA purge time: 2-6 s; Ar gas flow rate: 50-2000 sccm; O2 gas flow rate: 5-200 sccm; O2 pulse time: 1-10 s; Ar purge time: 2-8 s; plasma power: 200-1500 W; single cycle time: 10-30 s.

[0070] Within the aforementioned process window range, such as Figure 6 As shown, when the oxygen flow rate is 100 sccm, the argon flow rate is 2000 sccm, and the vacuum degree inside the cavity is 8.7 × 10⁻⁶, - At a torr (approximately 1.16 Pa) and a microwave power of 600 W, optical emission spectroscopy (OES) was used for monitoring. The measured OES intensity of the O (oxygen) spectral line was approximately 20,387.93 counts / s, and the OES intensity of the Ar (argon) spectral line was approximately 64,897.21 counts / s. These data represent the actual measured results of this system under typical process windows, demonstrating that the device of this invention can still achieve efficient excitation of high-intensity plasma under conditions of high flow rate and low pressure.

[0071] Thanks to the high oxygen radical intensity, this system can achieve an extremely short single-cycle time for alumina (e.g., 14 s), significantly improving thin film deposition efficiency. Furthermore, the alumina (Al₂O₃) thin films prepared using the above parameters exhibit excellent performance in several aspects. Key performance indicators for typical alumina thin films are as follows: single-cycle time: 14 s; thickness uniformity: 0.88%; O / Al atomic ratio: 1.45; refractive index n: 1.65; film density: 3.3 g / cm³; dielectric constant (k value): 9.3; breakdown electric field strength: 23.6 MV / cm.

[0072] The above characteristics fully demonstrate that the alumina thin film prepared by this system has high density, high uniformity, high dielectric properties, and extremely strong electrical insulation, making it suitable for high-end semiconductor devices, microelectronic components, and advanced displays. At the same deposition rate, the performance of the alumina thin film is superior to that of the conventional PEALD method, with a wide process window and good controllability. S4, Deposition reaction proceeds: The excited plasma undergoes a chemical reaction or physical deposition with the substrate surface in the reaction chamber 61, achieving thin film deposition. Microwaves radiate to the substrate at multiple points through the mesh 41 on the antenna ring 4, further improving the uniformity of the plasma and the consistency of the thin film deposition.

[0073] S5. Exhaust gas discharge: The exhaust gas and unreacted gas generated by the deposition reaction are promptly extracted through the air extraction port or exhaust channel set at the bottom of the reaction chamber 61, so that the entire reaction chamber always maintains the required working pressure and atmosphere environment.

[0074] In summary, this process sequentially includes microwave input → uniform gas injection → plasma excitation → substrate thin film deposition → exhaust gas discharge, thereby achieving efficient and stable uniform thin film deposition on large-size substrates.

[0075] The foregoing has shown and described the basic principles and main features of the present invention, as well as its advantages. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of the present invention. Various changes and modifications can be made to the present invention without departing from its spirit and scope. All such changes and modifications fall within the scope of the present invention as claimed, which is defined by the appended claims and their equivalents.

Claims

1. A microwave plasma enhanced atomic layer deposition or microwave plasma enhanced chemical vapor deposition apparatus enabling large size uniform deposition, characterized by: The resonant waveguide cavity, the reaction chamber, the gas dispersion ring, the quartz isolation plate and the antenna mesh ring, the upper cavity of the resonant waveguide cavity is tapered from top to bottom or is gradually increased in inner arc surface shape or spherical shape from top to bottom; The gas dispersion ring is arranged on the outer circumferential surface of the resonant waveguide cavity and is used for spraying uniform annular gas flow into the resonant waveguide cavity; The quartz isolation plate is arranged in the resonant waveguide cavity and above the gas dispersion ring, and is used for making the gas sprayed by the gas dispersion ring to form uniform plasma distribution; The antenna mesh ring is arranged between the resonant waveguide cavity and the reaction chamber and below the quartz isolation plate, and the antenna mesh ring is formed with mesh holes.

2. A microwave plasma enhanced atomic layer deposition or microwave plasma enhanced chemical vapor deposition apparatus for achieving large size uniform deposition according to claim 1, characterized in that: The inner circumferential surface of the gas dispersion ring is formed with a plurality of spaced-apart gas outlet holes, and the farther the distance between the gas outlet holes and the gas inlet end of the gas dispersion ring, the larger the aperture.

3. The apparatus of claim 1, wherein: The deposition device further comprises an upper seat body, the upper seat body is formed with a microwave inlet, the upper seat body is formed with an upper chamber, and the upper surface of the upper chamber is tapered from top to bottom or is gradually increased in inner arc surface shape from top to bottom.

4. The apparatus of claim 3, wherein: The lower end of the upper seat body is formed with a connecting ring, the lower surface of the upper seat body is formed with a mounting groove, and the quartz isolation plate is mounted in the mounting groove.

5. A microwave plasma enhanced atomic layer deposition or microwave plasma enhanced chemical vapor deposition apparatus for achieving large size uniform deposition according to claim 4, characterized in that: The gas dispersion ring is arranged below the quartz isolation plate and is sealingly connected with the upper surface of the quartz isolation plate.

6. The apparatus of claim 5, wherein: The deposition device further comprises an aluminum ring, the aluminum ring is arranged below the gas dispersion ring, the gas dispersion ring and the aluminum ring are sealingly connected, and the upper surface of the aluminum ring is connected with the connecting ring through a connecting piece.

7. A microwave plasma enhanced atomic layer deposition or microwave plasma enhanced chemical vapor deposition apparatus for achieving large size uniform deposition according to claim 6, characterized in that: The deposition device further comprises a reaction seat, the reaction chamber is arranged in the reaction seat, the reaction chamber is provided with an upper opening, and the lower surface of the aluminum ring is sealingly connected with the reaction seat.

8. The apparatus of claim 7, wherein: The deposition device further comprises an annular mounting rack, the annular mounting rack is fixedly connected with the lower surface of the aluminum ring, the annular mounting rack is arranged on the inner side of the upper opening, and the antenna mesh ring is detachably connected with the lower surface of the annular mounting rack.

9. The apparatus of claim 3, wherein: the apparatus is a microwave plasma enhanced atomic layer deposition or microwave plasma enhanced chemical vapor deposition apparatus for large area uniform deposition. The top of the upper seat body is provided with a microwave channel, the connecting position between the microwave channel and the upper chamber is provided with a front-stage tuning antenna, and the inner circumferential surface of the front-stage tuning antenna is tapered inward from top to bottom.

10. A process of microwave plasma enhanced atomic layer deposition or microwave plasma enhanced chemical vapor deposition for achieving large size uniform deposition, characterized by: The deposition device is prepared by using the microwave plasma enhanced atomic layer deposition or microwave plasma enhanced chemical vapor deposition device according to any one of claims 1-9, comprising the following steps: S1, the microwave enters the upper chamber of the resonant waveguide cavity to form a uniform and stable field strength distribution; S2, the gas dispersion ring uniformly injects reaction gas into the resonant waveguide cavity to form a uniform annular gas flow layer; S3, the microwave energy excites the reaction gas in the annular gas flow layer to form spatially uniform plasma after penetrating through the quartz isolation plate; S4, the microwave energy penetrates through the mesh holes of the antenna mesh ring to radiate the substrate at multiple points, so that the thin film deposition of a substrate with a size of at least 8 inches is realized.

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