A method and system for analyzing electrical performance of a gallium oxide device

Abstract

The application discloses a kind of gallium oxide device electrical performance analysis method and system, it is related to electronic component field, solve the problem that gallium oxide device electrical performance analysis method exists monitoring effect is not good, including steps S1: to sample gallium oxide device is carried out multi-scene voltage performance monitoring, obtains scene voltage monitoring data according to monitoring result;Step S2: according to scene voltage monitoring data, the gallium oxide device selected for analysis is divided into first type electrical device and second type electrical device, and first type electrical device is monitored for breakdown voltage, obtains device type preliminary analysis data according to monitoring result;Step S3: according to device type preliminary analysis data, the gallium oxide device selected for analysis is carried out electrical performance early warning.The application can improve the comprehensiveness and pertinence of gallium oxide device electrical performance analysis method.

Description

Technical Field

[0001] This invention belongs to the field of electronic components, specifically, it relates to a method and system for analyzing the electrical performance of gallium oxide devices. Background Technology

[0002] Gallium oxide (GaO) devices, as important electronic components, are widely used in power electronics, high-frequency communications, and energy conversion. The stability and reliability of their electrical performance directly affect the operating efficiency and safety of related equipment. However, existing methods for analyzing the electrical performance of GaO devices have significant shortcomings, mainly in the following aspects: First, existing methods cannot set multiple different temperature scenarios for GaO devices, making it difficult to perform refined analysis of the square wave voltage waveform under each temperature scenario. This results in a lack of comprehensiveness in the monitoring results, failing to accurately reflect the actual performance of the device under complex environmental conditions. Second, existing technologies fail to classify sample GaO devices into different types of electrical devices based on scenario voltage monitoring data, and cannot perform breakdown voltage monitoring for specific types of devices. This makes the monitoring process lack specificity and makes it difficult to effectively distinguish the performance differences and potential risks of the devices.

[0003] Furthermore, existing analytical methods have limitations in evaluating the voltage withstand capability and long-term stability of gallium oxide devices. For example, in breakdown voltage testing, there is a lack of comparative analysis between the initial breakdown voltage and real-time monitoring data, making it impossible to quantify the device's voltage withstand health status. Simultaneously, existing technologies lack a clear early warning mechanism, making it difficult to promptly detect and address device performance anomalies, increasing safety hazards during equipment operation. Therefore, developing a method and system for analyzing the electrical performance of gallium oxide devices that can achieve voltage performance monitoring in multiple scenarios, accurately classify device types, and provide targeted early warnings has significant technical importance and application value. This invention aims to solve the above problems by introducing innovative methods such as dynamic waveform analysis under multiple ambient temperatures, breakdown voltage testing, and calculation of the device voltage withstand health index, providing a scientific basis and technical support for the performance evaluation and reliability verification of gallium oxide devices. Summary of the Invention

[0004] The purpose of this invention is to provide a method and system for analyzing the electrical performance of gallium oxide devices, mainly to solve the problem that existing technologies cannot dynamically monitor and analyze the square wave voltage waveform of gallium oxide devices under multiple temperature scenarios, resulting in a lack of comprehensive monitoring results.

[0005] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0006] A method for analyzing the electrical performance of gallium oxide devices, comprising:

[0007] Step S1: Perform multi-scenario voltage performance monitoring on the sample gallium oxide device, and obtain scenario voltage monitoring data based on the monitoring results;

[0008] Step S2: Based on the scene voltage monitoring data, the selected gallium oxide devices for analysis are divided into first type electrical devices and second type electrical devices. Breakdown voltage monitoring is performed on the first type electrical devices, and preliminary analysis data of device type is obtained based on the monitoring results.

[0009] Step S3: Based on the preliminary analysis data of the device type, provide an early warning of the electrical performance of the selected gallium oxide devices.

[0010] Furthermore, in this invention, step S1 further includes the following specific steps:

[0011] Step S11: Acquire multiple gallium oxide devices present in the power equipment, and arbitrarily select one of the acquired gallium oxide devices as a sample gallium oxide device;

[0012] Step S12: During the voltage performance monitoring of the selected gallium oxide sample device, several different environmental test temperatures are set, and one sample environmental test temperature is selected from the multiple environmental test temperatures obtained.

[0013] Step S13: Perform voltage waveform analysis on the sample gallium oxide device at the sample environment test temperature, and obtain the voltage waveform time deviation corresponding to the sample environment test temperature based on the analysis results;

[0014] Step S14: Obtain the voltage waveform time deviation corresponding to each environmental test temperature to obtain the scene voltage monitoring data.

[0015] Furthermore, in this invention, step S13 further includes the following specific steps:

[0016] Step S131: Select a voltage history monitoring period within the historical period when the sample gallium oxide device is in operation at the sample environment test temperature;

[0017] Step S132: Obtain the square wave voltage of the sample gallium oxide device in real time during the voltage history monitoring period, obtain the square wave voltage values ​​at multiple different historical moments, obtain the time range corresponding to the voltage history monitoring period, obtain the voltage time period range, use the voltage time period range as the horizontal axis and the square wave voltage value as the vertical axis to create coordinate points for the square wave voltage values ​​at different historical moments, and connect multiple different voltage coordinate points to obtain the square wave voltage change curve during the time period.

[0018] Step S133: Perform waveform rise analysis on the square wave voltage change curve over the time period, and obtain the waveform rise time deviation based on the analysis results;

[0019] Step S134: Perform waveform descent analysis on the square wave voltage change curve over the time period, and obtain the waveform descent time deviation based on the analysis results;

[0020] Step S135: Compare the waveform rise time deviation and waveform fall time deviation. If the waveform rise time deviation is greater than or equal to the waveform fall time deviation, mark the waveform rise time deviation as the voltage waveform time deviation. If the waveform fall time deviation is less than the waveform rise time deviation, mark the waveform fall time deviation as the voltage waveform time deviation.

[0021] Furthermore, in this invention, step S133 further includes the following specific steps:

[0022] The square wave voltage rise curve in the square wave voltage change curve of the time period is extracted, and the steady-state voltage value corresponding to each square wave voltage rise curve is obtained. Based on the steady-state voltage value, a first steady-state voltage rise value and a second steady-state voltage rise value are set for each square wave voltage rise curve segment. The time taken for each square wave voltage rise curve to rise from the first steady-state voltage rise value to the second steady-state voltage rise value is obtained, resulting in multiple square wave voltage rise time values. The average value of the multiple square wave voltage rise values ​​is calculated to obtain the average square wave voltage rise time.

[0023] The voltage rise time reference interval corresponding to the square wave voltage rise curve is obtained, the difference between the average square wave voltage rise time and the voltage rise time reference interval is obtained, and the absolute value of the obtained difference is taken to obtain the square wave voltage rise time deviation.

[0024] The range value corresponding to the voltage rise time reference interval is obtained to obtain the voltage rise time interval range value. The ratio of the square wave voltage rise time deviation to the voltage rise time interval range value is calculated to obtain the waveform rise time deviation degree.

[0025] Furthermore, in this invention, step S134 further includes the following specific steps:

[0026] The square wave voltage drop curves in the time period are extracted, and the steady-state voltage value corresponding to each square wave voltage drop curve is obtained. Based on the steady-state voltage value, a first steady-state voltage drop value and a second steady-state voltage drop value are set for each segment of the square wave voltage drop curve. The time taken for each square wave voltage drop curve to drop from the first steady-state voltage drop value to the second steady-state voltage drop value is obtained, resulting in multiple square wave voltage drop time values. The average value of the multiple square wave voltage drop values ​​is calculated to obtain the average square wave voltage drop time.

[0027] The voltage drop time reference interval corresponding to the square wave voltage drop curve is obtained, the difference between the average square wave voltage drop time and the voltage drop time reference interval is obtained, and the absolute value of the obtained difference is taken to obtain the square wave voltage drop time deviation.

[0028] The range value corresponding to the voltage drop time reference interval is obtained to obtain the voltage drop time interval range value. The ratio of the square wave voltage drop time deviation to the voltage drop time interval range value is calculated to obtain the waveform drop time deviation degree.

[0029] Furthermore, in this invention, step S2 further includes the following specific steps:

[0030] Step S21: Obtain scene voltage monitoring data, obtain the voltage waveform time deviation of the sample gallium oxide device at each environmental test temperature based on the scene voltage monitoring data, compare the values ​​of the multiple voltage waveform time deviations, and mark the voltage waveform time deviation with the largest value as the waveform peak time deviation.

[0031] Step S22: Obtain the waveform time deviation reference range. If the waveform peak time deviation is within the waveform time deviation reference range, the sample gallium oxide device is classified as a first type of electrical device. If the waveform peak time deviation is not within the waveform time deviation reference range, the sample gallium oxide device is classified as a second type of electrical device, thus obtaining preliminary classification data of electrical performance.

[0032] Step S23: If the sample gallium oxide device is a type 1 electrical device, then perform a breakdown voltage test on the sample gallium oxide device, and obtain the device withstand voltage health index corresponding to the sample gallium oxide device based on the test results;

[0033] Step S24: Define the preliminary data of device stress health index and electrical performance classification corresponding to the sample gallium oxide device as the preliminary analysis data of device type.

[0034] Furthermore, in this invention, step S23 further includes the following specific steps:

[0035] The sample gallium oxide device is placed on the probe stage, and the probe is used to establish an electrical connection with the positive and negative electrodes of the sample gallium oxide device.

[0036] A reverse voltage was applied to the sample gallium oxide device using a probe station, and the reverse voltage was gradually increased. At the same time, the leakage current of the sample gallium oxide device was monitored, and the real-time leakage current value was obtained.

[0037] Obtain the preset value of leakage current. When the real-time leakage current value is equal to the preset value of leakage current, the probe station delivers a reverse voltage to the sample gallium oxide device to obtain the value, and obtains the test breakdown voltage value corresponding to the sample gallium oxide device.

[0038] Repeat the operation to obtain the test breakdown voltage value corresponding to each operation, and calculate the average value of the multiple test breakdown voltage values ​​to obtain the average test breakdown voltage.

[0039] Obtain the initial breakdown voltage value corresponding to the sample gallium oxide device, and calculate the device stress resistance health index corresponding to the sample gallium oxide device by combining the initial breakdown voltage value and the average test breakdown voltage.

[0040] The device stress resistance health index corresponding to the sample gallium oxide device is calculated using the following formula:

[0041] ;

[0042] in, This refers to the device stress resistance health index corresponding to the sample gallium oxide device. This is the initial breakdown voltage value. To test the average breakdown voltage.

[0043] Furthermore, in this invention, step S3 further includes the following specific steps:

[0044] Step S31: Obtain preliminary analysis data of device type, and obtain device stress resistance health index and preliminary classification data of electrical performance based on the preliminary analysis data of device type;

[0045] Step S32: Obtain the data for the first type of electrical device and the second type of electrical device based on the preliminary classification of electrical performance;

[0046] Step S33: If the sample gallium oxide device is a type I electrical device, analyze the device's stress resistance health index and issue an early warning based on the analysis results;

[0047] Step S34: If the sample gallium oxide device is a type II electrical device, then issue an electrical performance anomaly warning for the sample gallium oxide device.

[0048] Furthermore, in this invention, step S33 further includes the following specific steps:

[0049] The device's stress resistance health index is obtained, and the device's stress resistance health index threshold is obtained;

[0050] If the device's stress resistance health index is greater than or equal to the device's stress resistance health index threshold, an electrical performance abnormality warning will be issued for the sample gallium oxide device.

[0051] If the device's stress resistance health index is less than the device's stress resistance health index threshold, there is no need to issue an electrical performance anomaly warning for the sample gallium oxide device.

[0052] The present invention also provides an electrical performance analysis system for gallium oxide devices, used to implement the above-described method for analyzing the electrical performance of gallium oxide devices, the system comprising:

[0053] Voltage monitoring module: performs voltage performance monitoring of gallium oxide devices in multiple scenarios and obtains scenario voltage monitoring data based on the monitoring results;

[0054] Voltage Analysis Module: Based on the scene voltage monitoring data, the sample gallium oxide devices are divided into Type I electrical devices and Type II electrical devices. Breakdown voltage monitoring is performed on Type I electrical devices, and preliminary analysis data of device type is obtained based on the monitoring results.

[0055] Performance Analysis Module: Provides preliminary analysis data based on device type to provide early warnings on the electrical performance of sample gallium oxide devices.

[0056] Compared with the prior art, the present invention has the following beneficial effects:

[0057] (1) This invention solves the problem that existing technologies cannot cover complex environmental conditions and the monitoring results are one-sided by setting "multi-scenario environmental test temperatures" (such as -40℃, 25℃, 125℃, etc.) and monitoring the voltage waveform time deviation at different temperatures. By obtaining the voltage waveform time deviation at each temperature and extracting the "waveform peak time deviation", the performance stability of the device at extreme temperatures can be comprehensively reflected, making the analysis results more consistent with the actual working scenario and improving the environmental adaptability and data comprehensiveness of the method.

[0058] (2) This invention solves the problem of traditional methods using a uniform testing process for all devices and lacking specificity by classifying devices into "Type 1" (waveform peak time deviation within the reference range) and "Type 2" (device deviation exceeding the reference range) and only performing breakdown voltage testing on Type 1 devices. By quantifying the degree of breakdown voltage decay through the "Device Resistance Health Index" formula, it achieves accurate screening and in-depth evaluation of high-risk devices, reduces invalid testing steps, and significantly improves analysis efficiency and result accuracy.

[0059] (3) This invention constructs a hierarchical early warning logic based on "preliminary analysis data of device type": it directly issues anomaly warnings for second-type devices, and determines whether to issue a warning for first-type devices through the "device withstand voltage health index threshold," thus solving the problem that existing technologies lack a clear early warning mechanism and cannot detect potential risks in a timely manner. This mechanism combines waveform deviation and breakdown voltage attenuation as dual indicators, realizing the transformation from "passive monitoring" to "active early warning," providing a scientific basis for the reliability management of gallium oxide devices in power equipment, and reducing the risk of equipment malfunction. Attached Figure Description

[0060] Figure 1 This is a diagram illustrating the implementation steps of the present invention;

[0061] Figure 2 This is an overall system block diagram of the present invention. Detailed Implementation

[0062] The present invention will be further described below with reference to the accompanying drawings and embodiments. The embodiments of the present invention include, but are not limited to, the following embodiments.

[0063] Please see Figure 1 The present invention provides a method for analyzing the electrical performance of gallium oxide devices. In practical applications, the method of the present invention is mainly applied to the performance analysis of gallium oxide devices in power equipment.

[0064] First, multi-scenario voltage performance monitoring of multiple gallium oxide devices is required to obtain scenario voltage monitoring data. Specifically, multiple gallium oxide devices are extracted from the target power equipment, and one is randomly selected as the sample gallium oxide device. Then, several different environmental test temperatures are set, such as -40℃, 25℃, and 125℃, which typically cover the normal operating range of gallium oxide devices.

[0065] Next, voltage waveform analysis was performed on the sample gallium oxide device at each environmental test temperature to generate scenario voltage monitoring data. To achieve this, a historical voltage monitoring period within the historical operating period of the sample gallium oxide device was selected, and the square wave voltage value during that period was collected in real time, and the square wave voltage variation curve for that period was plotted.

[0066] Specifically, the time range of the historical voltage monitoring period is used as the horizontal axis, and the square wave voltage value is used as the vertical axis. Multiple voltage coordinate points are created and connected to form a curve. Subsequently, waveform characteristic analysis is performed on the rising and falling segments of the curve to calculate the waveform rise time deviation and waveform fall time deviation. The calculation process of the waveform rise time deviation includes extracting the square wave voltage rise curve from the square wave voltage change curve of the time period, and obtaining the first and second steady-state voltage rise values ​​for each segment of the square wave voltage rise curve. These two values ​​are 10% and 90% of the corresponding steady-state voltage value of the square wave voltage rise curve, respectively.

[0067] Next, the time required for each segment of the square wave voltage to rise from the first steady-state value to the second steady-state value is calculated, resulting in multiple square wave voltage rise time values. These values ​​are then averaged to obtain the mean square wave voltage rise time. Furthermore, a reference interval for the square wave voltage rise time is obtained, which consists of the historical average square wave voltage rise time of the sample gallium oxide device under the sample environment test temperature. The square wave voltage rise time deviation is obtained by calculating the difference between the mean square wave voltage rise time and the reference interval and taking the absolute value.

[0068] Finally, the range of the voltage rise time reference interval is obtained, and the ratio of the waveform rise time deviation to the range value is calculated to obtain the waveform rise time deviation. Similarly, the calculation process of the waveform fall time deviation includes extracting the square wave voltage drop curve from the square wave voltage change curve of the time period, and obtaining the first and second steady-state voltage drop values ​​for each segment of the square wave voltage drop curve. These two values ​​are 10% and 90% of the corresponding steady-state voltage value of the square wave voltage drop curve, respectively.

[0069] Subsequently, the time required for each segment of the square wave voltage to decrease from the first steady-state value to the second steady-state value was calculated, resulting in multiple square wave voltage drop time values. These values ​​were then averaged to obtain the mean square wave voltage drop time. A reference interval for the square wave voltage drop time was further obtained, consisting of the historical average square wave voltage drop time of the sample gallium oxide device at the sample environment test temperature. The square wave voltage drop time deviation was obtained by calculating the difference between the mean square wave voltage drop time and the reference interval and taking the absolute value.

[0070] Finally, the range of the voltage fall time reference interval is obtained, and the ratio of the waveform fall time deviation to the range value is calculated to obtain the waveform fall time deviation. The waveform rise time deviation and waveform fall time deviation are compared, and the larger value is taken as the voltage waveform time deviation. The above process is repeated to obtain the voltage waveform time deviation corresponding to each environmental test temperature, forming the scene voltage monitoring data.

[0071] After completing voltage performance monitoring in multiple scenarios, the sample gallium oxide devices were classified according to the scenario voltage monitoring data, and breakdown voltage monitoring was carried out for the first type of electrical devices. Specifically, scenario voltage monitoring data was acquired, and the voltage waveform time deviation of the sample gallium oxide devices at each environmental test temperature was extracted. The values ​​of multiple voltage waveform time deviations were compared, and the maximum value was marked as the waveform peak time deviation.

[0072] Subsequently, a waveform time deviation reference range is obtained, with a lower limit of 0 and an upper limit equal to the minimum waveform peak time deviation of the sample gallium oxide device during its historical operating period. If the waveform peak time deviation falls within the waveform time deviation reference range, the sample gallium oxide device is classified as a first-type electrical device; otherwise, it is classified as a second-type electrical device, forming preliminary electrical performance classification data. If the sample gallium oxide device is a first-type electrical device, a breakdown voltage test is performed. During the test, the sample gallium oxide device is placed on a probe stage, and a probe is used to establish an electrical connection with the positive and negative electrodes of the sample gallium oxide device. While gradually increasing the reverse voltage through the probe stage, the leakage current is monitored in real time. When the leakage current reaches a preset value (e.g., 1 μA / mm), the current reverse voltage value is recorded as the breakdown voltage value for one test. The test is repeated multiple times, and the breakdown voltage value for each test is obtained. The average value of all values ​​is calculated to obtain the average breakdown voltage. Simultaneously, the initial breakdown voltage value of the sample gallium oxide device is obtained, and the device's voltage resistance health index is calculated using the following formula:

[0073] ;

[0074] in, This refers to the device stress resistance health index corresponding to the sample gallium oxide device. This is the initial breakdown voltage value. The average breakdown voltage is used for testing. For example, if the initial breakdown voltage is 2830V and the average breakdown voltage is 2750V, the device's voltage withstand health index can be calculated to be 2.83%. Finally, the device's voltage withstand health index and preliminary electrical performance classification data are defined as preliminary analysis data for device type.

[0075] Finally, based on preliminary analysis data of device type, electrical performance warnings are issued for the sample gallium oxide devices. Specifically, the device's stress resistance health index and preliminary electrical performance classification data are obtained. If the sample gallium oxide device is a type I electrical device, its stress resistance health index is analyzed and compared with a preset threshold. The process of determining the stress resistance health index threshold involves selecting several gallium oxide devices with abnormal stress resistance performance, obtaining their stress resistance health indices for each device, comparing their values, and marking the minimum value as the stress resistance health index threshold. If the stress resistance health index is greater than or equal to the stress resistance health index threshold, an electrical performance abnormality warning is issued; if the stress resistance health index is less than the stress resistance health index threshold, no warning is issued. If the sample gallium oxide device is a type II electrical device, an electrical performance abnormality warning is issued directly.

[0076] At the system level, this invention also provides a gallium oxide device electrical performance analysis system for implementing the above-mentioned method. The system includes a voltage monitoring module, a voltage analysis module, a performance analysis module, and a server. The voltage monitoring module is responsible for monitoring the voltage performance of gallium oxide devices in multiple scenarios, acquiring voltage waveform data in real time under different environmental test temperatures, and calculating the voltage waveform time deviation to form monitoring data. The voltage analysis module is responsible for classifying sample gallium oxide devices based on scenario voltage monitoring data and conducting breakdown voltage monitoring for the first type of electrical devices. Specific functions include classifying first and second type electrical devices, monitoring leakage current by gradually increasing reverse voltage, calculating the average test breakdown voltage, and the device's voltage resistance health index. The performance analysis module is responsible for providing electrical performance warnings for sample gallium oxide devices based on preliminary analysis data of the device type. Specific functions include analyzing the device's voltage resistance health index and issuing an electrical performance anomaly warning when the voltage resistance health index exceeds a preset threshold. The server, as the core control unit of the system, coordinates the work of each module. Its specific functions include controlling the data transmission and processing of the voltage monitoring module, voltage analysis module, and performance analysis module, as well as storing and managing monitoring data, analysis results, and warning information.

[0077] The above embodiments are merely one of the preferred embodiments of the present invention and should not be used to limit the scope of protection of the present invention. Any modifications or refinements made to the main design concept and spirit of the present invention that are not of substantial significance, but solve the same technical problem as the present invention, should be included within the scope of protection of the present invention.

Claims

1. A method for analyzing the electrical performance of gallium oxide devices, characterized in that, The application relates to a method for analyzing the electrical performance of a gallium oxide device. The method comprises the following steps: Step S1: performing multi-scene voltage performance monitoring on a sample gallium oxide device, and obtaining scene voltage monitoring data according to the monitoring result; The specific steps are as follows: Step S11: obtaining a plurality of gallium oxide devices existing in the power equipment, and selecting one of the obtained gallium oxide devices as a sample gallium oxide device; Step S12: in the process of monitoring the voltage performance of the selected sample gallium oxide device, a plurality of different environmental test temperatures are set, and one sample environmental test temperature is selected from the obtained plurality of environmental test temperatures; Step S13: performing voltage waveform analysis on the sample gallium oxide device at the sample environmental test temperature, and obtaining the voltage waveform time deviation degree corresponding to the sample environmental test temperature according to the analysis result; the specific steps are as follows: Step S131: selecting a voltage historical monitoring time period in the historical period when the sample gallium oxide device is in a working state at the sample environmental test temperature; Step S132: obtaining the square wave voltage of the sample gallium oxide device in the voltage historical monitoring time period to obtain a plurality of square wave voltage values at different historical moments, obtaining the time range corresponding to the voltage historical monitoring time period, taking the voltage time range as the abscissa and the square wave voltage value as the ordinate to create coordinate points of the square wave voltage values at different historical moments, and connecting a plurality of different voltage coordinate points to obtain a time period square wave voltage change curve; Step S133: performing curve waveform rising analysis on the time period square wave voltage change curve, and obtaining the waveform rising time deviation degree according to the analysis result; Step S134: performing curve waveform falling analysis on the time period square wave voltage change curve, and obtaining the waveform falling time deviation degree according to the analysis result; Step S135: comparing the waveform rising time deviation degree and the waveform falling time deviation degree in value, if the waveform rising time deviation degree is greater than or equal to the waveform falling time deviation degree, the waveform rising time deviation degree is marked as the voltage waveform time deviation degree, and if the waveform rising time deviation degree is less than the waveform falling time deviation degree, the waveform falling time deviation degree is marked as the voltage waveform time deviation degree; Step S14: obtaining the voltage waveform time deviation degree corresponding to each environmental test temperature respectively to obtain the scene voltage monitoring data; Step S2: dividing the selected and analyzed gallium oxide device into a first type of electrical device and a second type of electrical device according to the scene voltage monitoring data, and performing breakdown voltage monitoring on the first type of electrical device, and obtaining device type preliminary analysis data according to the monitoring result; 2. The method of claim 1, wherein the method is characterized by: Step S3: performing electrical performance early warning on the selected and analyzed gallium oxide device according to the device type preliminary analysis data. In step S133, the following specific steps are further included: The step S134 further includes the following specific steps: The step S134 further includes the following specific steps: The step S134 further includes the following specific steps:

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steps: The step Step S23: If the sample gallium oxide device is a first type electrical device, a breakdown voltage test is performed on the sample gallium oxide device, and a device pressure resistance health index corresponding to the sample gallium oxide device is obtained according to a test result; Step S24: The device pressure resistance health index corresponding to the sample gallium oxide device and the electrical performance preliminary classification data are defined as device type preliminary analysis data.

5. The method of claim 4, wherein the method further comprises: In the step S23, the following specific steps are further included: The sample gallium oxide device is placed on a probe station, and a probe is used to establish electrical connection with the positive and negative electrodes of the sample gallium oxide device; The probe station is used to deliver a reverse voltage to the sample gallium oxide device, and the reverse voltage is gradually increased, and at the same time, the sample gallium oxide device is monitored for leakage current, and a real-time leakage current value is obtained; A leakage current preset value is obtained, and when the real-time leakage current value is equal to the leakage current preset value, the value of the reverse voltage delivered by the probe station to the sample gallium oxide device is obtained, and a test breakdown voltage value corresponding to the sample gallium oxide device is obtained; The operation is repeated to obtain a test breakdown voltage value corresponding to each operation, and an average value of the obtained multiple test breakdown voltage values is calculated to obtain a test breakdown voltage average value; An initial breakdown voltage value corresponding to the sample gallium oxide device is obtained, and the initial breakdown voltage value and the test breakdown voltage average value are calculated to obtain a device pressure resistance health index corresponding to the sample gallium oxide device; The device pressure resistance health index corresponding to the sample gallium oxide device is calculated, and the specific formula is as follows: ； wherein, is the device pressure resistance health index corresponding to the sample gallium oxide device, is the initial breakdown voltage value, is the average value of the breakdown voltage tested.

6. The method of claim 1, wherein the method is characterized by: In the step S3, the following specific steps are further included: Step S31: Obtain the device type preliminary analysis data, and obtain the device pressure resistance health index and the electrical performance preliminary classification data according to the device type preliminary analysis data; Step S32: Obtain the first type electrical device and the second type electrical device according to the electrical performance preliminary classification data; Step S33: If the sample gallium oxide device is a first type electrical device, analyze the device pressure resistance health index, and issue a warning according to the analysis result; Step S34: If the sample gallium oxide device is a second type electrical device, an electrical performance abnormality warning is issued for the sample gallium oxide device.

7. The method of claim 6, wherein the method further comprises: In the step S33, the following specific steps are further included: The device pressure resistance health index is obtained, and a device pressure resistance health index threshold value is obtained; If the device pressure resistance health index is greater than or equal to the device pressure resistance health index threshold value, an electrical performance abnormality warning is issued for the sample gallium oxide device; If the device pressure resistance health index is less than the device pressure resistance health index threshold value, no electrical performance abnormality warning is issued for the sample gallium oxide device.

8. A system for analyzing electrical properties of a gallium oxide device, adapted to the method of any one of claims 1-7, wherein, The analysis system includes: A voltage monitoring module: performing multi-scene voltage performance monitoring on the gallium oxide device, and obtaining scene voltage monitoring data according to the monitoring result; A voltage analysis module: dividing the sample gallium oxide device into a first type electrical device and a second type electrical device according to the scene voltage monitoring data, and performing breakdown voltage monitoring on the first type electrical device, and obtaining device type preliminary analysis data according to the monitoring result; Performance analysis module: preliminary analysis of data on the sample gallium oxide device electrical performance warning.

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