Silicon wafer processing method, device, processing equipment, program product and medium
By performing 3D morphological scanning and laser power model calculation in the early stage of silicon wafer processing, the problem of silicon wafer traceability was solved, the depth consistency and character recognition of laser marking were achieved, and the risk of mixed materials was reduced.
Patent Information
- Application Number
- CN202510965838.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-14
- Publication Date
- 2025-11-04
AI Technical Summary
In existing silicon wafer processing technology, it is difficult to trace the origin of silicon wafers in the early stages of the process, resulting in a high risk of mixing materials. Furthermore, the depth of the marking pits after laser engraving is inconsistent, making them difficult to identify.
By performing 3D topographic scanning on a silicon wafer to obtain three-dimensional point cloud data, the two-dimensional coordinates and height of the target location point are determined. The laser power is calculated based on the laser power model, and laser marking is performed on the target location point to form a target mark. Laser marking is performed before thinning.
This fulfills the traceability requirement for silicon wafers in the early stages of thinning, ensures the consistency of laser marking depth and the recognizability of characters, and reduces the risk of material mixing.
Smart Images
Figure CN120895461A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a silicon wafer processing method, device, processing equipment, program product and medium. BACKGROUND
[0002] In the process of silicon wafer processing, in order to improve product traceability, identification is performed on the edge of the silicon wafer by laser marking.
[0003] However, in the existing silicon wafer processing process, the marking is usually performed after the silicon wafer is obtained by cutting and thinning the silicon ingot, which leads to the difficulty in tracing the silicon wafer in the early process and the high risk of mixing. If the marking is directly performed before the thinning process, due to the uneven surface and uneven thickness of the silicon wafer after cutting, the depth of the marking hole after thinning will be inconsistent, and there is a problem that the marking cannot be effectively identified. SUMMARY
[0004] The present application provides a silicon wafer processing method, device, processing equipment, program product and medium, which can solve the problem of high risk of mixing caused by the difficulty in tracing the silicon wafer in the early process of processing.
[0005] To achieve the above purpose, the technical scheme adopted by the embodiments of the present application is as follows:
[0006] A silicon wafer processing method, comprising:
[0007] performing 3D topography scanning on the silicon wafer to obtain three-dimensional point cloud data corresponding to the silicon wafer;
[0008] determining two-dimensional coordinates of at least two target position points corresponding to a target mark on the silicon wafer according to the three-dimensional point cloud data;
[0009] determining a height corresponding to each target position point according to the three-dimensional point cloud data and the two-dimensional coordinates of the at least two target position points, the height corresponding to the target position point being the distance between the target position point and a reference plane;
[0010] determining a laser power corresponding to each target position point according to the height corresponding to each target position point;
[0011] performing laser coding on the at least two target position points according to the laser power corresponding to each target position point, to form the target mark on the silicon wafer.
[0012] In some embodiments, before determining the height corresponding to each target position point according to the three-dimensional point cloud data and the two-dimensional coordinates of the at least two target position points, the method further comprises:
[0013] performing plane fitting on the three-dimensional point cloud data based on the least square method to construct a reference plane.
[0014] In some embodiments, the laser power corresponding to each target position point is determined according to the height corresponding to each target position point, including:
[0015] The thinning thickness corresponding to the silicon wafer is obtained;
[0016] According to the thinning thickness and the first height value, the target parameter in the laser power model is determined, and the first height value is the maximum value in the heights corresponding to the at least two target position points;
[0017] The target parameter and the height corresponding to each target position point are input into the laser power model respectively, and the laser power corresponding to each target position point is obtained.
[0018] In some embodiments, before the laser power corresponding to each target position point is determined according to the height corresponding to each target position point, the method further includes:
[0019] The laser power model is constructed;
[0020] The function corresponding to the laser power model is represented as: P(x n ,y n )=a*(H(x n ,y n )-T)+b, wherein a and b are both constants, x n represents the horizontal coordinate of the target position point, y n represents the vertical coordinate of the target position point, H(x n ,y n ) represents the height of the target position point, T represents the target parameter, and P(x n ,y n ) represents the laser power corresponding to the target position point.
[0021] In some embodiments, after the at least two target position points are laser coded according to the laser power corresponding to each target position point, the method further includes:
[0022] The silicon wafer is thinned according to the thinning thickness.
[0023] In some embodiments, before the three-dimensional point cloud data corresponding to the silicon wafer is obtained by scanning the 3D topography of the silicon wafer, the method further includes:
[0024] The thickness and diameter of the silicon wafer are measured to obtain a measurement result;
[0025] According to the measurement result, the edge of the silicon wafer is topographically processed to form a chamfer structure on the edge of the silicon wafer.
[0026] The embodiment of the present application also provides a silicon wafer processing device, including:
[0027] The morphology scanning module is configured to perform 3D morphology scanning on the silicon wafer to obtain three-dimensional point cloud data corresponding to the silicon wafer.
[0028] The first processing module is configured to determine two-dimensional coordinates of at least two target position points corresponding to the target mark on the silicon wafer according to the three-dimensional point cloud data.
[0029] The second processing module is configured to determine a height corresponding to each target position point according to the three-dimensional point cloud data and the two-dimensional coordinates of the at least two target position points, the height corresponding to the target position point being a distance between the target position point and the reference plane.
[0030] The third processing module is configured to determine a laser power corresponding to each target position point according to the height corresponding to each target position point.
[0031] The laser marking module is configured to perform laser coding on the at least two target position points according to the laser power corresponding to each target position point, so as to form the target mark on the silicon wafer.
[0032] In some embodiments, the device further comprises:
[0033] The reference construction module is configured to perform plane fitting on the three-dimensional point cloud data based on a least square method to construct the reference plane.
[0034] In some embodiments, the third processing module comprises:
[0035] The data acquisition unit is configured to acquire a thinning thickness corresponding to the silicon wafer.
[0036] The first processing unit is configured to determine a target parameter in the laser power model according to the thinning thickness and a first height value, the first height value being a maximum value in the heights corresponding to the at least two target position points.
[0037] The second processing unit is configured to input the target parameter and the height corresponding to each target position point into the laser power model respectively to obtain the laser power corresponding to each target position point.
[0038] In some embodiments, the device further comprises:
[0039] The model construction unit is configured to construct the laser power model.
[0040] The function corresponding to the laser power model is represented as: P(x n ,y n )=a*(H(x n ,y n )-T)+b, where a and b are both constants, x n represents an abscissa of the target position point, y n represents an ordinate of the target position point, and H(x n ,yn represents the height of the target position point, Y represents the target parameter, P(x n ,y n represents the laser power corresponding to the target position point.
[0041] In some embodiments, the device further comprises:
[0042] a thinning processing module configured to perform a thinning processing on the silicon wafer according to the thinning thickness.
[0043] In some embodiments, the device further comprises:
[0044] a data measurement module configured to measure the thickness and the diameter of the silicon wafer to obtain a measurement result;
[0045] a topography processing module configured to perform a topography processing on the edge of the silicon wafer according to the measurement result to form a chamfer structure on the edge of the silicon wafer.
[0046] The embodiment of the present application further provides a processing device, including a memory, a processor and a computer program stored in the memory and executable on the processor; the processor executes the computer program to realize the silicon wafer processing method.
[0047] The embodiment of the present application further provides a computer program product, including computer instructions, which are executed by a processor to realize the steps of the silicon wafer processing method.
[0048] To achieve the above-mentioned purpose, the embodiment of the present application provides a readable storage medium, which stores a program or instructions, and the program or instructions are executed by a processor to realize the steps of the silicon wafer processing method.
[0049] The embodiment of the present application has the following beneficial effects:
[0050] In the embodiment, the height of each target position point can be used to determine the laser power used when the target position point is coded by laser, so that the laser coding with adaptive laser power is realized. In this way, on the one hand, the laser coding can be performed before the thinning process, so as to ensure the traceability requirement in the early stage of the silicon wafer production; on the other hand, the consistency of the coding depth of the laser coding after the thinning process can be ensured, and the recognizability of the coded characters can be ensured. BRIEF DESCRIPTION OF DRAWINGS
[0051] Figure 1 Fig. 1 shows a flowchart of the silicon wafer processing method according to an embodiment of the present application;
[0052] Figure 2 Fig. 2 shows a coding coordinate diagram according to an embodiment of the present application;
[0053] Figure 3A schematic diagram of a target marking depth of an embodiment of the present application is shown in FIG. 1.
[0054] Figure 4 A simulation diagram of a marking depth of an embodiment of the present application is shown in FIG. 2.
[0055] Figure 5 A schematic diagram of a conventional marking depth is shown in FIG. 3.
[0056] Figure 6 A schematic diagram of a processing flow of an embodiment of the present application is shown in FIG. 4.
[0057] Figure 7 A structural diagram of a processing device of an embodiment of the present application is shown in FIG. 5.
[0058] Figure 8 A structural diagram of a silicon wafer processing device of an embodiment of the present application is shown in FIG. 6. DETAILED DESCRIPTION
[0059] To make the objectives, technical solutions, and advantages of embodiments of the present application clearer, the technical solutions of embodiments of the present application will be described below in detail with reference to the accompanying drawings of the embodiments of the present application. Obviously, the described embodiments are some, but not all, of the embodiments of the present application. Based on the described embodiments of the present application, all other embodiments available to those skilled in the art belong to the scope of protection of the present application.
[0060] To solve the above technical problems, embodiments of the present application provide a silicon wafer processing method, device, processing device, program product, and medium, which can solve the problem of high risk of mixed materials due to difficulty in tracing the silicon wafer in the early processing procedure.
[0061] As shown in FIG. 1, an embodiment of the present application provides a silicon wafer processing method, which comprises the following steps. Figure 1
[0062] Step 101: performing 3D topography scanning on the silicon wafer to obtain three-dimensional point cloud data corresponding to the silicon wafer.
[0063] It should be noted that the three-dimensional point cloud data is a set composed of a large number of discrete three-dimensional coordinate points (x n , y n , z n ), which is obtained by sampling the silicon wafer through laser scanning, photogrammetry, and the like.
[0064] In this step 101, the silicon wafer can be scanned based on a white light confocal technology to perform 3D modeling on the silicon wafer. Here, the purpose is mainly to obtain three-dimensional point cloud data of a laser marking area, i.e., an area on the silicon wafer where a target mark is to be formed by laser marking.
[0065] Step 102: Based on the 3D point cloud data, determine the two-dimensional coordinates of at least two target location points corresponding to the target marker on the silicon wafer.
[0066] Here, the target mark refers to the information to be marked on the silicon wafer using laser marking. Specifically, the target mark can be text, numerical code, or machine-readable code. Examples include traceability information such as chip model, batch number, production date, and manufacturer code; unique identifiers such as serial number and serial number; or high-density QR codes and barcodes. The target location point refers to the location on the silicon wafer where the target mark will be formed by laser marking, i.e., the marking point. In step 102, the coordinates (x, y, x, y) of each target location point on the silicon wafer can be determined according to the marking dot matrix (i.e., the dot matrix corresponding to the target mark). n ,y n )(like Figure 2 (As shown).
[0067] Step 103: Based on the 3D point cloud data and the 2D coordinates of at least two target location points, determine the height corresponding to each target location point. The height corresponding to the target location point is the distance between the target location point and the reference plane 016.
[0068] It should be noted that, as Figures 3-4 As shown, location 015 represents the target marking area on the silicon wafer, and location 016 represents the reference plane. The height H(x) corresponding to the target location point is... n ,y n This refers to the vertical distance from the target location point to the reference plane 016. Here, we can use the least squares method to fit the reference plane 016 of the silicon wafer, that is, to minimize the sum of the squares of the vertical distances from the set of points on the silicon wafer surface to the reference plane 016.
[0069] In some specific examples, before determining the height corresponding to each target location point based on the 3D point cloud data and the 2D coordinates of at least two target location points, the method further includes: performing plane fitting on the 3D point cloud data based on the least squares method to construct a reference plane 016.
[0070] Step 104: Determine the laser power corresponding to each target location point based on the height corresponding to each target location point.
[0071] In other words, different laser powers can be used for laser marking at target locations at different heights to ensure that the depth of the resulting marking pits varies, thereby ensuring that the depth of the marking pits at target locations with different thickness removal amounts during the thinning process is consistent after the thinning process.
[0072] Step 105: Based on the laser power corresponding to each target location point, laser marking is performed on at least two target location points to form target marks on the silicon wafer.
[0073] In this embodiment, the actual height H(x) at each target location point can be used as the basis. n ,y n This involves determining the laser power used for laser marking at the target location. In other words, for target locations with different actual heights, an appropriate laser power is used for laser marking. Generally, target locations with greater heights have a larger thickness removed during the thinning process; therefore, a higher power should be used for these locations to ensure that the depth of the circular pits formed by laser marking remains consistent after the silicon wafer thinning process (e.g., ...). Figure 3 As shown in Figure 017, the location indicated is the target location for laser processing, and the recognizability of the coded characters must be ensured.
[0074] In some embodiments, the laser power corresponding to each target location point is determined based on the height corresponding to each target location point, including:
[0075] Step 1041: Obtain the corresponding thinning thickness of the silicon wafer.
[0076] It should be noted that the thinning thickness can be determined specifically based on the product's production requirements. In other words, the corresponding thinning thickness can be determined based on the thickness of the silicon wafer required by the customer.
[0077] Step 1041: Determine the target parameters in the laser power model based on the thinning thickness and the first height value, wherein the first height value is the maximum value among the heights corresponding to at least two target location points.
[0078] Specifically, such as Figures 3-4 As shown, the laser marking depth requirement D (position shown in 018), the removal amount of the thinning process (i.e., the thinning thickness), and H (x) can be determined based on the laser marking depth requirement D (position shown in 018), the removal amount of the thinning process (i.e., the thinning thickness), and H (x). n ,y n The laser marking depth is modeled. Based on the simulation of silicon wafer removal according to the process design, the actual surface of the silicon wafer after the thinning process (i.e., after removing the thinning thickness) is at position 019. Therefore, the difference between the first height value and the thinning thickness can be used as the target parameter (denoted by T). In other words, Figure 4 The distance between the actual surface 019 of the silicon wafer and the reference plane 016 after the thinning process is completed is the target parameter T.
[0079] It should be noted that this laser power model is a framework based on physical laws and mathematical equations, used to describe, analyze, and predict laser power output and input parameters (such as the actual height of the target location, i.e., the height H(x) corresponding to the target location). n ,y nThe functional relationship between )) is as follows. Therefore, based on this laser power model, the laser power corresponding to each target position point can be obtained, so that laser marking and engraving can be performed at each target position point with appropriate laser power, ultimately ensuring the consistency of marking depth at each target position point after the thinning process.
[0080] In some specific examples, before determining the laser power corresponding to each target location point based on its height, the method further includes constructing a laser power model. The function representing the laser power model is: P(x n ,y n )=a*(H(x n ,y n )-T)+b.
[0081] Where a and b are constants, x n The x-coordinate of the target location point, y n H(x) represents the ordinate of the target location point. n ,y n P(x) represents the height of the target location point, T represents the target parameter, and P(x) represents the height of the target location point. n ,y n ) represents the laser power corresponding to the target location point.
[0082] Step 1041: Input the target parameters and the height corresponding to each target location point into the laser power model to obtain the laser power corresponding to each target location point.
[0083] It should be noted that, in the embodiments of the present invention, as... Figure 5 As shown, because the silicon wafer surface has not yet been thinned by grinding during laser marking, the flatness and thickness differences are relatively large (e.g. Figure 4 The ΔH(x) shown n ,y n If the existing technology is used to mark different locations with the same power, the depth of the resulting marking pits will be consistent, but the height of the bottom of the marking pits will vary, potentially distributing them across different horizontal planes (e.g., ...). Figure 5 In the example shown, the marking pit at position 020 is the lowest relative to the other marking pits. Therefore, after thinning and flattening, the depth of these marking pits will vary, making the markings difficult to identify. In this embodiment of the invention, to achieve a consistent laser engraving depth at each target location after thinning and flattening, the laser power P(x) at different target locations is adjusted. n ,y nThe laser power is designed differently, and the difference in laser power is positively correlated with the difference in height of the target position point, thereby establishing an adaptive laser coding model based on the morphology of the silicon wafer, which can adaptively determine the appropriate laser power for each target position point that needs to be coded.
[0084] In some embodiments, after laser coding is performed on at least two target position points according to the laser power corresponding to each target position point, the method further includes thinning the silicon wafer according to the thinning thickness.
[0085] It should be noted that the silicon wafer processing method in the embodiments of the present application is performed after laser coding, and then the thinning process is performed. In this way, by adjusting the existing product processing flow, the laser coding and lettering process is arranged after the multi-wire cutting of the silicon ingot and before the thinning process. Compared with the prior art, the laser coding process is moved forward, and the traceability of the entire silicon wafer process can be achieved.
[0086] It can be understood that when the silicon wafer is thinned, the upper surface and the lower surface of the silicon wafer are processed. As shown in Figure 3 , the upper surface and the lower surface of the silicon wafer after the thinning process are in a symmetrical relationship with respect to the reference plane 016 in the longitudinal cross section.
[0087] In some embodiments, before the 3D morphology scanning of the silicon wafer is performed to obtain the three-dimensional point cloud data corresponding to the silicon wafer, the method further includes measuring the thickness and diameter of the silicon wafer to obtain a measurement result; and performing morphology processing on the edge of the silicon wafer according to the measurement result to form a chamfer structure on the edge of the silicon wafer.
[0088] That is, the thickness and diameter of the silicon wafer can be measured after the silicon ingot is cut into a silicon wafer to obtain a measurement result, and then the edge morphology processing (i.e., chamfering process) is performed on the silicon wafer according to the measurement result, and the silicon wafer is cleaned after the processing is completed. After that, the laser lettering process begins.
[0089] It should be noted that the existing coding process needs to separately configure a laser coding device, and the overall production process takes a long time. In the present application, the silicon wafer chamfering function and the laser coding function can be integrated on a processing device. In this way, the chamfering process and the laser coding process can be completed using one processing device, which effectively improves the utilization efficiency of the device, reduces the use cost of the device, and reduces the production time.
[0090] The scheme provided by the embodiments of the present application will be specifically illustrated below.
[0091] As shown in Figure 6 , the silicon wafer processing method of the embodiments of the present application includes the following steps:
[0092] Step 601: Measure the thickness or diameter of the silicon wafer;
[0093] Step 602: processing the edge profile of the silicon wafer, that is, chamfering process;
[0094] Step 603: cleaning the silicon wafer;
[0095] Step 604: based on the white light confocal technology, 3D profile scanning is performed on the silicon wafer (including the laser coding area) to perform 3D modeling on the silicon wafer;
[0096] Step 605: modeling the laser coding depth;
[0097] Step 606: laser coding power and focus point modeling, mainly to determine the height corresponding to each target position point in the laser coding area, and the laser power corresponding to each target position point;
[0098] Step 607: laser coding of the silicon wafer;
[0099] Step 608: laser code reading, checking whether the target mark formed after the coding in the last step is identifiable.
[0100] As shown in Figure 7 , in the processing device for executing the above-mentioned silicon wafer processing method in the embodiment of the application, the manipulator 001, the manipulator 012 and the manipulator 013 are used to grab the silicon wafer and can move along the linear guide rail 008 (or the linear guide rail 009, the linear guide rail 010) to transport the silicon wafer to different units. Among them, the chamfering processing unit 002 can perform the chamfering process, the silicon wafer cleaning unit 003 can clean the silicon wafer, the silicon wafer thickness diameter measurement unit 004 can measure the diameter and thickness of the silicon wafer, the white light confocal profile measurement unit 005 can perform 3D profile scanning on the silicon wafer to determine the laser power corresponding to each target position point, and the laser coding unit 006 can perform laser coding according to the laser power corresponding to each target position point to form a target mark on the silicon wafer. The laser code reader 007 can read the target mark formed finally to determine whether the target mark is identifiable.
[0101] In the embodiment, laser power adaptive laser coding is realized, so that on the one hand, laser coding is realized before the thinning process to ensure the traceability demand in the early stage of silicon wafer production, and on the other hand, the consistency of coding depth of laser coding in all places after the thinning process is ensured, and the readability of the coded characters is ensured.
[0102] As shown in Figure 8 , the embodiment of the application further provides a silicon wafer processing device, which comprises:
[0103] The profile scanning module 810 is configured to perform 3D profile scanning on the silicon wafer to obtain three-dimensional point cloud data corresponding to the silicon wafer.
[0104] The first processing module 820 is configured to determine two-dimensional coordinates of at least two target position points corresponding to the target mark on the silicon wafer according to the three-dimensional point cloud data.
[0105] The second processing module 830 is configured to determine a height corresponding to each target position point according to the three-dimensional point cloud data and the two-dimensional coordinates of the at least two target position points, the height corresponding to the target position point being a distance between the target position point and the reference plane.
[0106] The third processing module 840 is configured to determine a laser power corresponding to each target position point according to the height corresponding to each target position point.
[0107] The laser marking module 850 is configured to perform laser coding on the at least two target position points according to the laser power corresponding to each target position point, so as to form the target mark on the silicon wafer.
[0108] In this embodiment, the laser power used by each target position point during laser coding can be determined according to the height of the target position point, so that laser coding with adaptive laser power is realized. In this way, on the one hand, laser coding can be performed before the thinning process, so as to ensure the traceability requirement in the early stage of silicon wafer production; on the other hand, the coding depth consistency of laser coding in different positions after the thinning process can be ensured, and the readability of the coded characters can also be ensured.
[0109] In some embodiments, the device further includes:
[0110] The reference construction module is configured to perform plane fitting on the three-dimensional point cloud data based on the least square method, and construct a reference plane.
[0111] In some embodiments, the third processing module includes:
[0112] The data acquisition unit is configured to acquire a thinning thickness corresponding to the silicon wafer.
[0113] The first processing unit is configured to determine a target parameter in the laser power model according to the thinning thickness and a first height value, the first height value being a maximum value in the heights corresponding to the at least two target position points.
[0114] The second processing unit is configured to input the target parameter and the height corresponding to each target position point into the laser power model respectively, and obtain the laser power corresponding to each target position point.
[0115] In some embodiments, the device further includes:
[0116] The model construction unit is configured to construct a laser power model.
[0117] The function corresponding to the laser power model is represented as: P(xn ,y n )=a*(H(x n ,y n )-T)+b, where a and b are constants, x n The x-coordinate of the target location point, y n H(x) represents the ordinate of the target location point. n ,y n P(x) represents the height of the target location point, T represents the target parameter, and P(x) represents the height of the target location point. n ,y n ) represents the laser power corresponding to the target location point.
[0118] In some embodiments, the apparatus further includes:
[0119] The thinning module is used to thin the silicon wafer according to the required thickness.
[0120] In some embodiments, the apparatus further includes:
[0121] The data measurement module is used to measure the thickness and diameter of the silicon wafer and obtain the measurement results;
[0122] The topography processing module is used to perform topography processing on the edges of the silicon wafer based on the measurement results, so as to form a chamfer structure on the edges of the silicon wafer.
[0123] This invention also provides a processing device, including a memory, a processor, and a computer program stored in the memory and executable on the processor; when the processor executes the computer program, it implements the silicon wafer processing method described above.
[0124] This application also provides a computer program product, including computer instructions, which, when executed by a processor, implement the above-described... Figure 1 The various processes of the method embodiments shown can achieve the same technical effect, and will not be described again here to avoid repetition.
[0125] This application also provides a readable storage medium storing a program or instructions thereon, which, when executed by a processor, implement the steps in the silicon wafer processing method described above.
[0126] It should be noted that the various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, since the embodiments are basically similar to the product embodiments, the descriptions are relatively simple, and the relevant parts can be referred to the descriptions of the product embodiments.
[0127] Unless otherwise defined, technical terms or scientific terms used in the present disclosure shall have the same meaning as commonly understood by one of ordinary skill in the art to which the present disclosure belongs. The terms "first", "second", and similar terms are used to describe various components, but do not indicate any order, quantity, or importance, and are used only to distinguish the different components. The terms "include", "comprise", and similar terms are intended to mean that the elements or objects listed after the terms encompass the elements or objects listed and equivalents thereof, and do not exclude other elements or objects.
[0128] In the description of the above-mentioned embodiments, specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner.
[0129] The above description is merely illustrative of the disclosure and does not limit the scope of the disclosure. Any modifications made within the scope of the disclosure disclosed herein should be encompassed by the scope of the disclosure. Therefore, the scope of the disclosure should be based on the scope of the claims.
Claims
1. A silicon wafer processing method, characterized in that, include: A 3D topographic scan of the silicon wafer is performed to obtain the corresponding three-dimensional point cloud data of the silicon wafer. Based on the three-dimensional point cloud data, determine the two-dimensional coordinates of at least two target location points corresponding to the target marker on the silicon wafer; Based on the three-dimensional point cloud data and the two-dimensional coordinates of the at least two target location points, the height corresponding to each target location point is determined, and the height corresponding to the target location point is the distance between the target location point and the reference plane; The laser power corresponding to each target location point is determined based on the height corresponding to each target location point. Based on the laser power corresponding to each target location point, laser marking is performed on the at least two target location points to form the target mark on the silicon wafer.
2. The method according to claim 1, characterized in that, Before determining the height corresponding to each target location point based on the three-dimensional point cloud data and the two-dimensional coordinates of the at least two target location points, the method further includes: Based on the least squares method, the three-dimensional point cloud data is fitted to a plane to construct the reference plane.
3. The method according to claim 1, characterized in that, The step of determining the laser power corresponding to each target location point based on the height corresponding to each target location point includes: Obtain the corresponding thinning thickness of the silicon wafer; Based on the thinning thickness and the first height value, the target parameters in the laser power model are determined, wherein the first height value is the maximum value among the heights corresponding to the at least two target location points; The target parameters and the height corresponding to each target location point are input into the laser power model to obtain the laser power corresponding to each target location point.
4. The method according to claim 3, characterized in that, Before determining the laser power corresponding to each target location point based on the height corresponding to each target location point, the method further includes: Construct the laser power model; The function corresponding to the laser power model is expressed as: P(x n ,y n )=a*(H(x n ,y n )-T)+b, where a and b are constants, x n The x-coordinate of the target location point is represented by y. n H(x) represents the ordinate of the target location point. n ,y n P(x) represents the height of the target location point, T represents the target parameter, and P(x) represents the height of the target location point. n ,y n ) represents the laser power corresponding to the target location point.
5. The method according to claim 3, characterized in that, After laser marking is performed on the at least two target location points according to the laser power corresponding to each target location point, the method further includes: The silicon wafer is thinned according to the stated thinning thickness.
6. The method according to claim 1, characterized in that, Before performing a 3D topographic scan on the silicon wafer to obtain the corresponding three-dimensional point cloud data, the method further includes: The thickness and diameter of the silicon wafer were measured, and the measurement results were obtained. Based on the measurement results, the edges of the silicon wafer are morphologically processed to form a chamfered structure at the edges of the silicon wafer.
7. A silicon wafer processing apparatus, characterized in that, include: The topography scanning module is used to perform 3D topography scanning on the silicon wafer to obtain the three-dimensional point cloud data corresponding to the silicon wafer. The first processing module is used to determine the two-dimensional coordinates of at least two target location points corresponding to the target marker on the silicon wafer based on the three-dimensional point cloud data. The second processing module is used to determine the height corresponding to each of the target locations based on the three-dimensional point cloud data and the two-dimensional coordinates of the at least two target locations, wherein the height corresponding to the target location is the distance between the target location and the reference plane; The third processing module is used to determine the laser power corresponding to each target location point based on the height corresponding to each target location point. A laser marking module is used to laser mark at least two target locations according to the laser power corresponding to each target location, so as to form the target mark on the silicon wafer.
8. A processing apparatus, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor; characterized in that, When the processor executes the computer program, it implements the silicon wafer processing method as described in any one of claims 1 to 6.
9. A computer program product, characterized in that, It includes computer instructions that, when executed by a processor, implement the steps of the silicon wafer processing method as described in any one of claims 1-6.
10. A readable storage medium having a program or instructions stored thereon, characterized in that, When the program or instructions are executed by the processor, they implement the steps of the silicon wafer processing method as described in any one of claims 1-6.