Low-temperature plasma technology for improving germination rate and growth and development of radish seeds and application of low-temperature plasma technology
By treating radish seeds with low-temperature plasma technology, the germination and growth of radish seeds are promoted by utilizing active oxygen and active nitrogen components, which solves the problems of low germination rate and slow growth of radish seeds, and improves seed germination rate and growth development.
Patent Information
- Application Number
- CN202511005643.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-16
- Publication Date
- 2025-11-07
AI Technical Summary
Radish seeds have low germination rates and slow growth, which affects yield and quality, and existing technologies have limitations in improving them.
Low-temperature plasma technology is used to treat radish seeds, utilizing active oxygen and active nitrogen components to promote seed metabolism and improve germination rate and growth and development.
It significantly improves the germination rate and growth rate of radish seeds, enhances stress resistance, and improves seed quality and yield.
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Figure CN120898577A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application belongs to the field of physics and biotechnology, and specifically relates to a technology and application for improving the germination rate and growth and development ability of radish seeds. BACKGROUND
[0002] Radish is an important vegetable crop with a wide planting area in China and has high economic and nutritional value. However, in recent years, the germination rate and growth and development status of radish seeds have attracted people's attention. First, the current situation of the germination rate of radish seeds is not optimistic. According to statistics, the germination rate of radish seeds on the market is generally low, and even some varieties have a germination rate of less than 50%. This seriously affects the growth and development and yield of radish, causing great losses to growers. Second, the growth and development status of radish seeds also has problems. Some growers report that even if radish seeds with a high germination rate are planted, the growth process is still slow. This leads to an extension of the growth cycle of radish, and even in some areas, the radish cannot be harvested on time, causing economic losses to farmers. The consequences of low germination rate and slow growth and development of radish seeds are multifaceted. They affect the yield and quality of radish, reduce the income of farmers, and also affect the market supply and the fluctuation of market prices. At the same time, they also affect the confidence of consumers in radish products and reduce their willingness to consume radish. Although we can improve the germination rate of seeds through chemical treatment, temperature control, and humidity management, these methods still have certain limitations and cannot completely solve the problem of low germination rate.
[0003] Low-temperature plasma is a special state of matter with many unique properties. In low-temperature plasma, atoms or molecules lose some or all of their electrons, forming positively charged ions and negatively charged electrons. In this state, matter exhibits high activity and electrical conductivity, which has an important influence on the germination rate and growth and development of seeds. The active ions and free radicals in low-temperature plasma can promote the chemical reaction on the surface of the seed, thereby breaking the dormancy of the seed and promoting the germination of the seed. On the other hand, too high a plasma activity can cause damage to the seed and affect its normal growth and development process. Therefore, in practical applications, the activity of low-temperature plasma needs to be controlled to achieve the effect of promoting seed germination. The possibility of low-temperature plasma is currently being studied, although its mechanism needs to be studied, but it is also a new idea for low-temperature plasma to improve the germination rate and growth and development ability of radish seeds.
[0004] Therefore, in recent years, researchers have been actively seeking an effective and safe way to improve the germination and growth and development ability of radish seeds, and developing a new technology to better promote the germination rate and growth and development of radish seeds. SUMMARY
[0005] The technical problem solved by the present application is to provide a technology and application for improving the germination rate and growth and development capacity of radish seeds by low-temperature plasma.
[0006] To solve the above technical problem, the present application discloses a technology for improving the germination rate and growth and development capacity of radish seeds by low-temperature plasma.
[0007] The low-temperature plasma technology can produce active substances to act on radish seeds. The active substances include active oxygen and active nitrogen and other components, promote the metabolism process of the seeds, stimulate seed respiration and energy metabolism, thereby accelerating the germination process of the seeds. At the same time, it can also improve the stress resistance of the seeds and improve the adaptability of the seeds to environmental stress. The low-temperature plasma technology is characterized by promoting the germination rate of radish seeds and improving the growth and development capacity of radish.
[0008] The matrix includes active oxygen and active nitrogen. The active oxygen includes superoxide anion, hydrogen peroxide, hydroxyl radical and other substances. The active nitrogen includes ammonia nitrogen, nitrate nitrogen and nitrite nitrogen and other substances.
[0009] The above-mentioned technology for improving the germination rate and growth and development capacity of radish seeds by low-temperature plasma includes the following steps:
[0010] (1) Prepare different types of radish seeds;
[0011] (2) Prepare a low-temperature plasma device;
[0012] (3) Treat the radish seeds; put the radish seeds of step (1) into the low-temperature plasma device of step (2) to obtain treated radish seeds, and put them into an incubator for culture.
[0013] In step (1), ordinary white radish seeds, ordinary green radish seeds and ordinary carrot seeds are included. The surfaces are uniformly sprayed with water for standby.
[0014] In step (2), the low-temperature plasma device needs to be connected to a transformer and an argon gas delivery device.
[0015] In step (3), the prepared radish seeds are treated in the low-temperature plasma device. The low-temperature plasma treatment voltage is 110V, 130V and 150V.
[0016] In step (3), the argon gas is delivered to ensure that the low-temperature plasma device is filled. When adjusting the voltage, it should be done at one step to avoid staying at other voltages.
[0017] The low-temperature plasma can promote the germination rate and growth and development of the radish seeds, and the active oxygen and active nitrogen generated by the low-temperature plasma equipment can improve the germination rate and growth and development capacity of the radish seeds by adjusting the hormone level.
[0018] Due to the quality of radish seeds, planting environment, climate conditions and planting techniques, the germination rate and growth and development of the seeds are affected. Low seed germination rate will also affect market supply, which may lead to insufficient supply of radishes on the market, thereby affecting market prices and consumer purchasing experience. Therefore, it is crucial to improve the germination rate and growth and development of radish seeds.
[0019] Beneficial effects: Compared with the prior art, the present application has the following advantages:
[0020] (1) The low-temperature plasma technology provided by the present application can improve the germination rate and growth and development capacity of radish seeds, improve the metabolism of radish seeds, and improve the stress resistance of radish seeds.
[0021] (2) In the prior art, the warm plasma can activate the biological active substances in the seeds, promote the germination and growth and development of the seeds, accelerate the growth speed, improve the yield, promote the absorption of nutrients by plants, enhance the stress resistance and disease resistance of plants, and improve the quality and yield of crops. However, some technologies may change the genes of seeds and pollute soil and water sources, which is different from the prior art. BRIEF DESCRIPTION OF DRAWINGS
[0022] Figure 1 、 2 , 3 is the measurement of various indexes of green, red and white radishes at three days
[0023] Figure 4 、 5 is the measurement of various indexes of white radishes at the seventh day of water culture and the fourteenth day of soil culture DETAILED DESCRIPTION
[0024] The present application can be better understood according to the following examples.
[0025] Example 1: Process of treating radish seeds by low-temperature plasma
[0026] (1) Preparation of radish seeds: 90 common green radish seeds, 90 red radish seeds and 90 white radish seeds on the market were prepared, soaked in tap water for 10 minutes, and then uniformly placed in glass culture dishes for subsequent treatment.
[0027] (2) Low temperature plasma device preparation: The low temperature plasma device is connected to a valve that can adjust the voltage, and the valve is connected to a power supply and a transformer. At the same time, the low temperature plasma device needs to have an air inlet hole and an air outlet hole, because argon is an inert gas, so the air inlet hole and the air outlet hole are arranged above the low temperature plasma device. The air inlet hole is connected to an argon tank with a hose, and the air outlet hole is connected to the outside air. After preparation, it is used for subsequent experiments.
[0028] (3) Low temperature plasma treatment of radish seeds: After placing the prepared radish seeds evenly in a glass culture dish, place the culture dish in the connected low temperature plasma device. In order to avoid gas leakage during the transportation of argon, the low temperature plasma device needs to be completely sealed. Transport argon into the device at a flow rate of 5L / min for 30s to fill the device with argon. Then adjust the valve to use 110V, 130V and 150V voltage to treat radish seeds for 30s. After treatment, remove the power supply and take out the treated radish seeds for standby.
[0029] Example 2: Radish seed germination rate and growth development
[0030] (I) Test seeds
[0031] Seeds are taken from three common radish seeds on the market.
[0032] (II) Experimental method
[0033] Water culture method is adopted. Add appropriate amount of water in the glass culture dish, and pad appropriate amount of filter paper to ensure adequate water and seed fixation. Place the treated radish seeds evenly on the filter paper and put them in the seed germination box. Provide appropriate temperature and adequate water. After three days, observe the germination rate and root length, and observe the seed growth development after seven days. On the seventh day, detect the growth development of white radish, seedling weight, seedling root length and seedling height. At the same time, the soil culture method is used to detect the growth development of white radish. On the fourteenth day, take out and observe the growth development of the seeds, including plant weight, plant height, leaf weight, root length and root weight.
[0034] (III) Test items:
[0035] On the third day, observe the germination rate of the seeds and detect the weight and root length of the seeds. On the seventh day, observe the seed growth development. On the fourteenth day, observe the growth development of soil-cultured white radish.
[0036] Seed weight and root length measurement
[0037] Radish seed weight measurement: On the third day of culture, three kinds of radish seeds were taken out, and clean filter paper was used to absorb the water on the surface of the seeds before measurement. The seeds were placed on the electronic balance to measure the weight of the seeds, and the length measuring ruler was used to record the root length of each kind of seed. Finally, the photos were taken for record. On the seventh day, the seeds were taken out for photography to record the growth and development of the seeds. On the fourteenth day, the white radish seeds were taken out for observation of the growth and development.
[0038] (VI) Experimental results:
[0039] Figure 1 : Water-cultured green radish germination rate and seed growth and development
[0040] The results showed that low temperature plasma improved the germination rate of green radish seeds, and the germination rate of seeds treated with low temperature plasma was significantly higher than that of the con group Figure 1 A). Statistical analysis showed that there was no significant change in the weight of the seeds on the third day Figure 1 B). However, on the third day, the root length of the radish seeds treated with low temperature plasma 130V was significantly higher than that of the con group Figure 1 C). On the seventh day, the growth and development of the radish seeds treated with low temperature plasma were significantly improved compared with the con group Figure 1 D).
[0041] Figure 2 : Water-cultured red radish germination rate and seed growth and development
[0042] The results showed that low temperature plasma improved the germination rate of red radish seeds, and the germination rate of seeds treated with low temperature plasma was significantly higher than that of the con group Figure 2 A). Statistical analysis showed that the weight of the seeds treated with low temperature plasma 150V was significantly higher than that of the con group on the third day Figure 2 B). And on the third day, the root length of the radish seeds treated with low temperature plasma was significantly higher than that of the con group, with the 130V treatment group being the most obvious Figure 2 C). On the seventh day, the growth and development of the radish seeds treated with low temperature plasma were significantly improved compared with the con group Figure 2 D).
[0043] Figure 3 : Water-cultured white radish three-day germination rate and seed growth and development
[0044] The results showed that low temperature plasma improved the germination rate of white radish seeds, and the germination rate of seeds treated with low temperature plasma was significantly higher than that of the con group Figure 3A) The weight of the seeds treated by low-temperature plasma was significantly higher than that of the con group on the third day, with the 130V treatment group showing the most significant increase. Figure 3 B) The root length of the radish seeds treated by low-temperature plasma was significantly higher than that of the con group on the third day, with the 110V treatment group showing the most significant increase. Figure 3 C) Finally, the plant height treated by low-temperature plasma was significantly higher than that of the con group on the third day, with the 130V treatment group showing the most significant increase. Figure 3 D).
[0045] Figure 4 : Water-cultured white radish seven-day germination rate and seed growth and development
[0046] The results show that low-temperature plasma improves the germination rate of white radish seeds, and the growth and development of seeds treated by low-temperature plasma are significantly better than those of the con group, with the 110V treatment group showing the most significant performance. Figure 4 A) The weight of the seeds treated by low-temperature plasma was significantly higher than that of the con group on the seventh day, with the 110V treatment group showing the most significant increase. Figure 4 B) The root length of the radish seeds treated by low-temperature plasma was significantly higher than that of the con group on the seventh day, with the 150V treatment group showing the most significant increase. Figure 4 C) Finally, the plant height treated by low-temperature plasma was significantly higher than that of the con group on the seventh day, with the 110V treatment group showing the most significant increase. Figure 4 D).
[0047] Figure 5 : Soil-cultured white radish fourteen-day germination rate and seed growth and development
[0048] The results show that low-temperature plasma improves the germination rate of white radish seeds, and the growth and development of seeds treated by low-temperature plasma are higher than those of the con group. Figure 5 A) The weight of the seedlings treated by low-temperature plasma was significantly higher than that of the con group on the fourteenth day. Figure 5 B) And on the fourteenth day, the height of the seedlings treated by low-temperature plasma did not change significantly. Figure 5 C) On the fourteenth day, the leaf weight of the white radish seedlings treated by low-temperature plasma was significantly higher than that of the con group, with the 130V and 150V treatments being the most significant. Figure 5 D) The root length of the low-temperature plasma treatment group was significantly higher than that of the con group, with the 110V and 150V treatment groups showing the most significant increase. Figure 5 E) Finally, on the fourteenth day, the root weight of the seedlings treated by low-temperature plasma was higher than that of the con group. Figure 5 F).
[0049] Conclusion: The low-temperature plasma technology has the effect of improving the radish seed germination rate; the low-temperature plasma technology obviously improves the radish seed seedling growth and development condition. Therefore, the low-temperature plasma technology can be used for promoting the radish seed germination rate and growth and development capacity.
[0050] The application provides a low-temperature plasma technology method and application for improving radish seed germination rate and growth and development capacity.
Claims
1. A low-temperature plasma treatment technology for improving the germination rate and growth and development capacity of radish seeds, comprising the following steps: A. Preparing radish seeds, including common white radish seeds, common green radish seeds and common carrot seeds; B. Preparing a low-temperature plasma device, which is connected to a transformer and an argon gas delivery device; C. Placing the radish seeds into the low-temperature plasma device, and after the device is filled with argon gas, adjusting the input voltage to a range of 80-150 V and treating the radish seeds for a time ranging from 15 s to 2 min.
2. The low-temperature plasma treatment technology according to claim 1, which can produce active substances such as active oxygen and active nitrogen, promote the metabolic process of the seeds, and improve the germination rate and growth and development capacity of the seeds.
3. The low-temperature plasma treatment technology according to claim 1, wherein the radish seeds need to be uniformly sprayed with clean water on the surface before treatment.
4. The low-temperature plasma treatment technology according to claim 1 for improving the germination rate and growth and development capacity of radish seeds, wherein the argon gas delivery amount of the low-temperature plasma device ranges from 1 to 5 L / min, and the delivery time ranges from 10 s to 1 min.
5. The low-temperature plasma treatment technology according to claim 1, wherein the treated radish seeds are placed in an incubator for culture, which can significantly improve the germination rate, promote growth and development, and improve the stress resistance of the seeds.
6. Radish seeds obtained by the method according to any one of claims 1-5.
7. The use of the radish seeds according to claim 6 in improving the germination rate and growth and development capacity of radish seeds.