Chemical mechanical polishing composition and method of polishing copper substrate
By adding a composite surfactant of alkyl chain sulfonate amine and betaine compounds to the chemical mechanical polishing slurry, combined with polishing inhibitors and promoters, the problems of insufficient copper removal rate and surface planarization in the prior art are solved, achieving efficient and stable copper polishing effect and long shelf life.
Patent Information
- Application Number
- CN202510971178.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-15
- Publication Date
- 2025-11-07
AI Technical Summary
Existing chemical mechanical polishing slurries are insufficient in terms of copper removal rate and surface planarization, making it difficult to simultaneously achieve efficient removal of excess copper and maintain surface quality, and they also have a short shelf life.
A composite surfactant is formed by alkyl chain sulfonate amines and betaine compounds, which are combined with polishing inhibitors and polishing accelerators to optimize the composition of the chemical mechanical polishing composition, including liquid carrier, abrasive particles, polishing inhibitors and polishing accelerators. The pH value is controlled at 8-10 to improve the polishing rate and uniformity of copper, and to prolong the stability and dispersibility of the composition.
It achieves high-efficiency copper polishing rate and uniformity, while reducing surface defects and extending the shelf life of the polishing slurry, meeting the requirements of the TSV process for high copper removal rate and surface smoothness.
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Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of chemical mechanical polishing, in particular to a chemical mechanical polishing composition and a method for polishing a copper substrate. BACKGROUND
[0002] Chemical mechanical polishing (CMP) is currently the only practical and core technology that can achieve global planarization of wafers. On the one hand, in the traditional IC industry, in order to improve the integration, reduce the energy consumption and shorten the delay time, the line width is continuously narrowed, and low-k materials with low mechanical strength are applied to the dielectric layer, while the number of wiring layers is continuously increased. Under this background, in order to protect the performance and stability of integrated circuits, it is necessary to reduce the polishing pressure while ensuring the copper removal rate, further improve the surface planarization degree of copper lines, and effectively control the surface defects.
[0003] On the other hand, due to physical limitations, the line width cannot be infinitely narrowed, and the semiconductor industry gradually shifts to multi-chip packaging technology. Through-hole silicon technology (TSV) as a leading technology for chip interconnection, realizes interconnection by making vertical conduction between chips and wafers, maximizes the three-dimensional stacking density of chips, reduces the size, and significantly improves the speed and low-power performance of chips. At present, after filling copper in the opening, the TSV process uses CMP to remove the excess copper to achieve planarization. Unlike traditional IC processes, the thickness of the excess copper layer after filling in TSV can reach several to several tens of microns, which requires the polishing liquid to have extremely high copper removal rate while not damaging the surface quality to ensure the flatness of the polished surface. At the same time, due to the long time of the polishing liquid from production, storage to terminal use, the polishing liquid also needs a longer shelf life. SUMMARY
[0004] The present application provides a chemical mechanical polishing composition and a method for polishing a copper substrate, which forms a composite surfactant with an alkyl chain sulfonic acid amine and a betaine compound to improve the polishing rate and uniformity of copper while improving the stability and dispersibility of the polishing composition to obtain a longer shelf life.
[0005] In a first aspect, the present application provides a chemical mechanical polishing composition, comprising: a liquid carrier; abrasive particles dispersed in the liquid carrier; a polishing inhibitor and a polishing promoter; an anionic surfactant, which is an alkyl chain sulfonic acid amine; a zwitterionic surfactant, which is a betaine compound, the content of the alkyl chain sulfonic acid amine is 0.05-0.45wt%, the content of the betaine compound is 0.05-0.15wt%; and the pH value of the chemical mechanical polishing composition is 8-10.
[0006] In one possible implementation, the alkyl chain sulfonic acid amine is selected from one or more of dodecyl sulfonic acid amine, octadecyl sulfonic acid amine, hexadecyl sulfonic acid amine, ammonium coco-sulfonate; the betaine compound is selected from one or more of cocamidopropyl betaine, cocamidopropyl hydroxysultaine, dodecyl dimethyl betaine, dodecyl dimethyl sulfobetaine, lauryl hydroxysultaine. More preferably, the alkyl chain sulfonic acid amine is dodecyl sulfonic acid amine, and the betaine compound is cocamidopropyl betaine.
[0007] In one possible implementation, the weight ratio of the alkyl chain sulfonic acid amine and the betaine compound is 1:2-3:1.
[0008] In one possible implementation, the weight ratio of the alkyl chain sulfonic acid amine and the betaine compound is 2:1-3:1, and the total content of the alkyl chain sulfonic acid amine and the betaine compound is 0.3-0.5 wt%.
[0009] In one possible implementation, the molar ratio of the polishing inhibitor and the polishing accelerator is 1:15-1:5, and the total content of the polishing inhibitor and the polishing accelerator is 0.05-0.7 wt%. Preferably, the molar ratio of the polishing inhibitor and the polishing accelerator is 1:10, and the total content of the polishing inhibitor and the polishing accelerator is 0.3-0.5 wt%.
[0010] In one possible implementation, the polishing inhibitor is selected from one or more of pyrazinotriazole and derivatives thereof, amino-1,2,4-triazolopyrazine, hydroxyl-1,2,3-triazolopyrazine; and the polishing accelerator is selected from one or more of propylenediamine, N-hydroxyethyl ethylenediamine, hexanediamine.
[0011] In one possible implementation, the polishing inhibitor is pyrazinotriazole, the polishing accelerator is propylenediamine, the molar ratio of the polishing inhibitor and the polishing accelerator is 1:10, and the total content of the polishing inhibitor and the polishing accelerator is 0.3-0.5 wt%.
[0012] In one possible implementation, the abrasive particles are selected from one or more of alumina, ceria, silica, zirconia, and combinations thereof, and the content of the abrasive particles is 3-5 wt%.
[0013] In one possible implementation, the abrasive particles are a combination of silica and zirconia, the particle size of the silica is 30-50 nm, the particle size of the zirconia is 70-100 nm, and the weight ratio of the silica and the zirconia is 2:3.
[0014] In a second aspect, the present application provides a method of chemical mechanical polishing a substrate having a copper layer, comprising:
[0015] (i) contacting the substrate with a chemical mechanical polishing composition comprising: a liquid carrier; abrasive particles dispersed in the liquid carrier; a polishing inhibitor and a polishing accelerator; an anionic surfactant being an alkyl chain sulfonamide, the content of the alkyl chain sulfonamide being 0.05-0.45 wt%; a zwitterionic surfactant being a betaine compound, the content of the betaine compound being 0.05-0.15 wt%; and the pH value of the chemical mechanical polishing composition being 8-10;
[0016] (ii) moving the chemical mechanical polishing composition relative to the substrate; and
[0017] (iii) abrading at least a portion of the substrate to polish the substrate.
[0018] In the above technical solution, by adding the alkyl chain sulfonamide and the betaine compound to form a composite surfactant, the combination of the two can play a synergistic effect, which can improve the polishing rate and polishing uniformity of copper, and at the same time improve the stability and dispersibility of the polishing composition to obtain a longer shelf life. In addition, the polishing composition also includes a polishing inhibitor and a polishing accelerator, the polishing accelerator preferentially dissolves the oxide film at the protruding position to promote material removal; the polishing inhibitor can be adsorbed at the recessed or flat position to inhibit excessive corrosion and ensure the surface flatness, thereby realizing the combination of low surface defects and high polishing rate. DETAILED DESCRIPTION
[0019] In order to make the purpose, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions in the embodiments of the present application will be clearly and completely described below. If the specific conditions are not specified in the embodiments, the conventional conditions or the conditions recommended by the manufacturer are used. If the reagents or instruments used are not specified by the manufacturer, they are all conventional products that can be purchased on the market.
[0020] It should be understood that the term "and / or" used in the present application specification and the appended claims means any combination of one or more of the associated listed terms and all possible combinations, and includes these combinations.
[0021] It should be noted that the following examples are examples of the present application, which are only used to illustrate the present application, but not to limit the present application. Other combinations and various modifications within the concept of the present application can be made without departing from the spirit or scope of the present application.
[0022] The chemical mechanical polishing composition and the method of polishing the copper substrate provided by the present application are described in detail below.
[0023] The chemical mechanical polishing composition of the embodiments of the present application comprises, consists essentially of, or consists of: a liquid carrier; abrasive particles dispersed in the liquid carrier; a polishing inhibitor; a polishing accelerator; an anionic surfactant that is an alkyl chain sulfonic amine; and a zwitterionic surfactant that is a betaine compound.
[0024] In the present application, the pH of the chemical mechanical polishing composition is from 8 to 10. For example, the pH of the polishing composition is about 10 or less, about 9.5 or less, about 9 or less. In addition, the pH of the polishing composition is about 8 or more, about 8.5 or more, about 9 or more.
[0025] Any liquid carrier suitable for use in a chemical mechanical polishing process can be used in the chemical mechanical polishing composition of the present application. The liquid carrier is typically an aqueous carrier, which can be water alone, can include water and a suitable water-miscible solvent, or can be an emulsion. Suitable water-miscible solvents include alcohols such as methanol, ethanol, and the like. Preferably, the aqueous carrier consists of water, more preferably deionized water.
[0026] In the present application, the content of the alkyl chain sulfonic amine is from 0.05 to 0.45 wt% based on the weight of the polishing composition. For example, the content of the alkyl chain sulfonic amine is about 0.05 wt% or more, about 0.1 wt% or more, about 0.15 wt% or more, about 0.2 wt% or more, or about 0.25 wt% or more. In addition, the content of the alkyl chain sulfonic amine is about 0.45 wt% or less, about 0.4 wt% or less, about 0.35 wt% or less, about 0.3 wt% or less.
[0027] The content of the betaine compound is from 0.05 to 0.15 wt% based on the weight of the polishing composition. For example, the content of the betaine compound is about 0.05 wt% or more, 0.06 wt% or more, 0.07 wt% or more, or about 0.08 wt% or more. In addition, the content of the betaine compound is about 0.15 wt% or less, about 0.12 wt% or less, about 0.10 wt% or less, about 0.08 wt% or less, about 0.07 wt% or less.
[0028] The chemical mechanical polishing composition provided by the application can effectively reduce the interfacial tension of the copper surface, promote the contact of the abrasive particles with the copper surface, thereby improving the polishing rate and polishing uniformity of the copper, and at the same time, improving the stability and dispersibility of the polishing composition to obtain a longer shelf life. In addition, the polishing composition further comprises a polishing inhibitor and a polishing accelerator, the polishing accelerator preferentially dissolves the oxide film at the convex position to promote material removal, and the polishing inhibitor can be adsorbed at the concave or flat position to inhibit excessive corrosion and ensure the flatness of the surface, thereby realizing the combination of low surface defects and high polishing rate.
[0029] Preferably, the alkyl chain sulfamate is selected from one or more of dodecyl sulfamate, octadecyl sulfamate, hexadecyl sulfamate and ammonium cocoyl sulfonate; and the betaine compound is selected from one or more of cocamidopropyl betaine, cocamidopropyl hydroxysultaine, dodecyl dimethyl betaine, dodecyl dimethyl sulfobetaine and lauryl hydroxysultaine. More preferably, the alkyl chain sulfamate is dodecyl sulfamate, and the betaine compound is cocamidopropyl betaine.
[0030] In the present application, the weight ratio of the alkyl chain sulfamate to the betaine compound is 1:2 to 3:1, preferably the weight ratio of the alkyl chain sulfamate to the betaine compound is 2:1 to 3:1, and the total content of the alkyl chain sulfamate and the betaine compound in the polishing composition is 0.3 to 0.5 wt%. For example, the weight ratio of the alkyl chain sulfamate to the betaine compound is about 1:2, about 1:1, about 2:3, about 3:2, about 2:1 or about 3:1. When the weight ratio of the alkyl chain sulfamate to the betaine compound is within the above range, the alkyl chain sulfamate and the betaine compound can have a good synergistic effect, the polishing composition has good dispersibility and high polishing performance, the polishing rate is improved, and the shelf life of the polishing composition is prolonged. If the weight ratio of the alkyl chain sulfamate to the betaine compound is too low or too high, the synergistic effect will be destroyed, the adsorption and interaction between the polishing composition and the polished surface will be affected, the polishing rate of the copper will be slowed down, or the dispersibility of the polishing composition will be affected, and the shelf life of the polishing composition will be shortened.
[0031] In the present application, the molar ratio of the polishing inhibitor and the polishing accelerator is 1:15 to 1:5, preferably, the molar ratio of the polishing inhibitor and the polishing accelerator is 1:10. For example, the molar ratio of the polishing inhibitor and the polishing accelerator is about 1:15, about 1:13, about 1:11, about 1:10, about 1:8, about 1:5. When the molar ratio of the polishing inhibitor and the polishing accelerator is within the above range, the polishing inhibitor and the polishing accelerator can have a good synergistic effect, the polishing accelerator can preferentially dissolve the oxide film at the protruding part to promote material removal; the polishing inhibitor can be adsorbed at the recessed or flat part to inhibit excessive corrosion and ensure the surface flatness, thereby controlling the low copper surface roughness.
[0032] The total content of the polishing inhibitor and the polishing accelerator is 0.05 to 0.7 wt%, preferably, the total content of the polishing inhibitor and the polishing accelerator is 0.3 to 0.5 wt% based on the weight of the polishing composition. For example, the total content of the polishing inhibitor and the polishing accelerator is about 0.05 wt% or more, about 0.1 wt% or more, about 0.2 wt% or more, or about 0.3 wt% or more. In addition, the total content of the polishing inhibitor and the polishing accelerator is about 0.7 wt% or less, about 0.6 wt% or less, about 0.5 wt% or less, about 0.4 wt% or less, about 0.3 wt% or less.
[0033] In the present application, the polishing inhibitor is a pyrazinotriazole and its derivative, which is selected from one or more of pyrazinotriazole, amino-1,2,4-triazolopyrazine, hydroxy-1,2,3-triazolopyrazine, and the polishing accelerator is a diamine compound, which is selected from one or more of propylenediamine, N-hydroxyethyl ethylenediamine, hexanediamine. The diamine compound can form a stable complex with copper ions to promote the dissolution and removal of copper; in addition, the pyrazinotriazole and its derivative can be used as a corrosion inhibitor, which is adsorbed at the recessed or flat part to form a protective film on the copper surface, inhibit excessive corrosion, control the dissolution rate of copper, and thus help to maintain a low surface roughness.
[0034] Preferably, the polishing inhibitor is a pyrazinotriazole, the polishing accelerator is propylenediamine, the molar ratio of the polishing inhibitor and the polishing accelerator is 1:10; the total content of the polishing inhibitor and the polishing accelerator is 0.3 to 0.5 wt% based on the weight of the polishing composition.
[0035] In the present application, the abrasive particles are selected from the group consisting of alumina, ceria, silica, zirconia, and combinations thereof. The abrasive particles can have any suitable average particle size between about 35 and 120 nm. For example, the abrasive particles can have an average particle size of about 35 nm or greater, 45 nm or greater, 55 nm or greater, 65 nm or greater. In addition, the abrasive particles can have an average particle size of about 120 nm or less, 100 nm or less, 75 nm or less, 50 nm or less. The alumina is preferably a polymer modified alumina and the silica is preferably a colloidal silica.
[0036] The abrasive particles are present in an amount of 3 to 5 wt%, for example, about 3 wt% or greater, about 3.5 wt% or greater, about 4 wt% or greater, based on the weight of the polishing composition. In addition, the abrasive particles can be suspended in an aqueous medium at a concentration of about 5 wt% or less, about 4.5 wt% or less, about 4 wt% or less.
[0037] Preferably, the abrasive particles are a combination of silica having a particle size of 35 to 55 nm and zirconia having a particle size of 75 to 95 nm, and the weight ratio of the silica to the zirconia is 2:3. The composite abrasive particles can further enhance the material removal rate while maintaining a low surface roughness.
[0038] In the present application, the chemical mechanical polishing composition can further include additives commonly used in the art, such as oxidizing agents, biocides, and the like.
[0039] In a second aspect, the present application further provides a method of chemically mechanically polishing a substrate having a copper layer, comprising: (i) contacting the substrate with a chemical mechanical polishing composition, the chemical mechanical polishing composition comprising: a liquid carrier; abrasive particles dispersed in the liquid carrier; a polishing inhibitor; a polishing accelerator; an anionic surfactant, which is an alkyl chain sulfonate amine; a zwitterionic surfactant, which is a betaine compound, the alkyl chain sulfonate amine being present in an amount of 0.05 to 0.45 wt%, and the betaine compound being present in an amount of 0.05 to 0.15 wt%; and the chemical mechanical polishing composition having a pH of 8 to 10, (ii) moving the chemical mechanical polishing composition relative to the substrate, and (iii) abrading at least a portion of the substrate to polish the substrate.
[0040] Although the chemical mechanical polishing composition of the present application can be used to polish any substrate (e.g., integrated circuits, metals, ILD layers, semiconductors, and thin films), the chemical mechanical polishing composition is particularly useful for polishing substrates containing copper.
[0041] The technical solutions of the present application will be further described below in combination with specific embodiments.
[0042] In the examples and comparative examples, the physical properties of the chemical mechanical polishing composition were measured according to the following methods.
[0043] (1) Specific polishing conditions: the polishing machine was Ebara F-REX300X, the polishing pad was DH3002, the pressure was 1.8 psi, the rotation speed of the polishing disc / polishing head was 93 / 87 rpm, the polishing liquid flow rate was 300 ml / min, and the polishing time was 1 min. The polished wafer was a blanket wafer coated with copper to a thickness of 10000 A.
[0044] (2) Copper polishing rate: the difference in copper film thickness before and after polishing for 1 min was the copper polishing rate, and the film thickness was measured using a four-probe resistivity tester.
[0045] (3) Aging time: the prepared chemical mechanical polishing composition was divided into different sample bottles and aged at 55°C, and the basic physical properties were detected every 6 days. If the particle size deviated from the initial value by 3%, it was defined as invalid, and the high-temperature aging time was defined as the aging time. The ten times of the aging time could be used as the shelf life of the chemical mechanical polishing composition at room temperature.
[0046] (4) Surface defects: the number of Defects of Cu 0.08 μm was tested by Surfscan SP7.
[0047] Tables 1, 3, and 5 give the components of Examples 1-20 and Comparative Examples 1-12 of the chemical mechanical polishing composition of the present application, wherein the ratio of the two kinds of abrasive particles is by weight, and the ratio of the polishing inhibitor and the polishing accelerator is by mole. According to the components given in Tables 1, 3, and 5, all the components were mixed uniformly, and deionized water was added to make up the mass percentage to 100%. The pH value was adjusted using KOH or HNO3. The oxidizing agent was added before use, and the mixture was mixed uniformly. The chemical mechanical polishing composition of the present application can also be prepared into a concentrated sample, diluted to the concentration in the examples with deionized water before use, and the oxidizing agent is added for use.
[0048] Components of the chemical mechanical polishing composition of Examples 1-5 and Comparative Examples 1-7 in Table 1
[0049]
[0050]
[0051] Evaluation results of the chemical mechanical polishing composition of Examples 1-5 and Comparative Examples 1-7 in Table 2
[0052]
[0053]
[0054] Table 1 provides the components of the chemical mechanical polishing compositions of Examples 1-5 and Comparative Examples 1-7, with the type and content of the surfactant adjusted. As can be seen from Table 2, by comparing Examples 1-5, it can be found that the polishing rate and aging time of Examples 1 and 2 are optimal. As can be seen from Comparative Examples 1-5 and Comparative Examples 1-3, when the weight ratio of the alkyl chain sulfonamide amine and the betaine compound is 1:2-3:1, and the content is within the appropriate range, the polishing rate of Cu is greater than 6500 A / min, and the aging time of the polishing composition is more than 36 days, the alkyl chain sulfonamide amine and the betaine compound can have a good synergistic effect. When the weight ratio of the alkyl chain sulfonamide amine and the betaine compound is too high or too low, the polishing performance of the polishing composition on Cu is general, the aging time is short, and the composite surfactant does not have a synergistic effect. As can be seen from Comparative Examples 1-5 and Comparative Examples 4-5, when a single component surfactant is used, the polishing performance of the polishing composition on Cu is general, and the aging time is short. In Comparative Example 6, the cationic surfactant polyquaternary ammonium salt-10 and the anionic surfactant dodecyl sulfonamide amine are added together into the polishing composition, and the resulting polishing composition flocculates, and cannot be polished. In Comparative Example 7, the cationic surfactant polyquaternary ammonium salt-10 and the zwitterionic surfactant cocamide propyl betaine are added together into the polishing composition, the polishing performance of the polishing composition on Cu is general, the aging time is short, and the composite surfactant does not have a synergistic effect.
[0055] Table 3 provides the components of the chemical mechanical polishing compositions of Examples 6-13 and Comparative Examples 8-12
[0056]
[0057]
[0058] Table 4 provides the evaluation results of the chemical mechanical polishing compositions of Examples 6-13 and Comparative Examples 8-12
[0059]
[0060] Table 3 provides the components of the chemical mechanical polishing compositions of Examples 6-13 and Comparative Examples 8-12, in which the types and contents of the polishing inhibitor and the polishing accelerator were adjusted. As shown in Table 4, by comparing Examples 6-13, it can be found that the polishing effects of Example 7, Example 8 and Example 11 are the best, the polishing rates of Cu are all greater than 7000 A / min, and the surface defects of Cu are all less than 350. By comparing Examples 6-13 and Comparative Examples 8-10, it can be found that when the molar ratio of the polishing inhibitor to the polishing accelerator is 1:15-1:5, and the total content of the polishing inhibitor and the polishing accelerator is 0.05-0.7 wt%, the polishing rates of Cu are all greater than 6500 A / min, and the surface defects of Cu are all less than 600, the polishing inhibitor and the polishing accelerator can have a good synergistic effect. By Comparative Examples 8-10, it can be found that when the total content of the polishing inhibitor and the polishing accelerator is too high, or when the molar ratio of the polishing inhibitor to the polishing accelerator is too high or too low, the polishing performance of the polishing composition on Cu is general, and the polishing inhibitor and the polishing accelerator do not have a synergistic effect. By comparing Examples 6-13 and Comparative Examples 11-12, it can be found that when only the polishing inhibitor or the polishing accelerator is used, the polishing performance of the polishing composition on Cu is general, and it is impossible to simultaneously achieve low surface defects and high polishing rate.
[0061] Table 5 provides the components of the chemical mechanical polishing compositions of Examples 14-20, in which the types and contents of the abrasive particles were adjusted.
[0062]
[0063] Table 6 provides the evaluation results of the chemical mechanical polishing compositions of Examples 14-20.
[0064]
[0065] Table 5 provides the components of the chemical mechanical polishing compositions of Examples 14-20, in which the types and contents of the abrasive particles were adjusted. As shown in Table 6, by comparing Examples 14-20, it can be found that the polishing effects of Examples 14-16 are the best. When the combination of silicon dioxide and zirconium oxide is used, and the weight ratio of silicon dioxide to zirconium oxide is 2:3, the polishing rates of Cu are all greater than 7000 A / min, and the surface defects of Cu are all less than 350. By comparing Examples 15-18, it can be found that when the weight ratio of silicon dioxide to zirconium oxide is too low, the content of zirconium oxide is too high, the polishing rate of Cu is high, but the surface defects of Cu are also high; when the weight ratio of silicon dioxide to zirconium oxide is too high, the content of silicon dioxide is too high, the surface defects of Cu are low, but the polishing rate of Cu is also low. By Examples 19-20, it can be found that when aluminum oxide or cerium oxide is used as the abrasive, the polishing composition cannot simultaneously achieve low surface defects and high polishing rate.
[0066] While embodiments of the application have been disclosed in connection with the above specification, it will be understood that it is not intended to limit the application to the particular embodiments disclosed but rather it is intended to cover all modifications and equivalents thereof falling within the scope of the claims and equivalents thereof.
Claims
1. A chemical mechanical polishing composition characterized in that, The chemical mechanical polishing composition comprises: a liquid carrier; abrasive particles dispersed in the liquid carrier; a polishing inhibitor and a polishing accelerator; an anionic surfactant which is an alkyl chain amine sulfonate; a zwitterionic surfactant which is a betaine compound, the content of the alkyl chain amine sulfonate being 0.05-0.45 wt%, and the content of the betaine compound being 0.05-0.15 wt%; and the pH of the chemical mechanical polishing composition being 8-10.
2. The composition of claim 1, wherein The alkyl chain amine sulfonate is selected from one or more of dodecyl amine sulfonate, octadecyl amine sulfonate, hexadecyl amine sulfonate, and ammonium coco-sulfonate; and the betaine compound is selected from one or more of cocamidopropyl betaine, cocamidopropyl hydroxysultaine, dodecyl dimethyl betaine, dodecyl dimethyl sulfobetaine, and lauryl hydroxysultaine.
3. The composition of claim 1, wherein The weight ratio of the alkyl chain amine sulfonate to the betaine compound is 1:2-3:
1.
4. The composition of claim 3, wherein The weight ratio of the alkyl chain amine sulfonate to the betaine compound is 2:1-3:1, and the total content of the alkyl chain amine sulfonate and the betaine compound is 0.3-0.5 wt%.
5. The composition according to any one of claims 1 to 4, wherein The molar ratio of the polishing inhibitor to the polishing accelerator is 1:15-1:5, and the total content of the polishing inhibitor and the polishing accelerator is 0.05-0.7 wt%.
6. The composition of claim 5, wherein The polishing inhibitor is a pyrazinotriazole and derivatives thereof, selected from one or more of pyrazinotriazole, amino-1,2,4-triazolopyrazine, and hydroxyl-1,2,3-triazolopyrazine; and the polishing accelerator is a diamine compound, selected from one or more of propylene diamine, N-hydroxyethyl ethylene diamine, and hexamethylene diamine.
7. The composition of claim 5, wherein The polishing inhibitor is pyrazinotriazole, and the polishing accelerator is propylene diamine, the molar ratio of the polishing inhibitor to the polishing accelerator being 1:10, and the total content of the polishing inhibitor and the polishing accelerator being 0.3-0.5 wt%.
8. The composition according to any one of claims 1 to 4, wherein The abrasive particles are selected from alumina, ceria, silica, zirconia, and combinations thereof, and the content of the abrasive particles is 3-5 wt%.
9. The composition of claim 8, wherein The abrasive particles are a combination of silica and zirconia, the particle size of the silica being 30-50 nm, the particle size of the zirconia being 70-100 nm, and the weight ratio of the silica to the zirconia being 2:
3.
10. A method of chemical mechanical polishing of a substrate having a copper layer, characterized by, The chemical mechanical polishing composition comprises: a liquid carrier; abrasive particles dispersed in the liquid carrier; a polishing inhibitor and a polishing accelerator; an anionic surfactant which is an alkyl chain amine sulfonate; a zwitterionic surfactant which is a betaine compound, the content of the alkyl chain amine sulfonate being 0.05-0.45 wt%, and the content of the betaine compound being 0.05-0.15 wt%; and the pH of the chemical mechanical polishing composition being 8-10; (ii) moving the chemical mechanical polishing composition relative to the substrate; and (iii) abrading at least a portion of the substrate to polish the substrate.