Solid state disk fault pre-diagnosis and data security self-repairing processing method and device

Abstract

The invention relates to a solid state disk fault pre-diagnosis and data security self-repairing processing method and device, and belongs to the technical field of memorizers. The method comprises the steps that in the running process of a solid state disk, the block erasure time of each storage block is monitored, and when the block erasure time of one or more storage blocks exceeds an early warning threshold value for the first time, the data security self-repairing processing is executed; marking the storage block as an early warning state; continuously monitoring the block erasure time change rate of the storage block marked as the early warning state, and if the block erasure time change rate exceeds an accelerated degradation threshold value, judging that the storage block enters a high-risk state; executing a hot data identification operation on the storage block in the high-risk state, and identifying a data page of which the wear value is higher than a set level in the storage block; directionally migrating the identified high-wear-value data page to a reserved healthy storage block, and after migration is completed, executing write protection locking operation on the storage block in the original high-risk state; and an effect of data security active protection and storage life collaborative optimization is realized.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of memory, in particular to a solid state disk fault pre-diagnosis and data security self-repair processing method and device. BACKGROUND

[0002] As a mainstream storage device, the sudden failure caused by the physical degradation of the storage unit of the solid state disk is the core threat to data security. The current industry solution has a fundamental defect: on the one hand, it relies on static threshold triggering early warning, which cannot identify dynamic degradation characteristics such as the degradation acceleration of the oxide layer of the storage unit, resulting in serious lag of early warning (such as fixed erase time upper limit or bad block quantity threshold); on the other hand, it uses a repair mechanism of full block data migration, which bundles and transfers low-risk cold data and high-wear hot data, not only significantly increasing the effective load and accelerating the wear of healthy blocks, but also causing secondary data damage due to the lack of redundancy verification in the migration process. These problems lead to unacceptable data loss risk of the solid state disk in high reliability scenarios such as finance and medical treatment. SUMMARY

[0003] The main purpose of the present application is to provide a solid state disk fault pre-diagnosis and data security self-repair processing method and device, which realizes active protection of data security and collaborative optimization of storage life by accurately identifying high-wear data pages in high-risk storage blocks and migrating them directionally.

[0004] To achieve the above purpose, the solid state disk fault pre-diagnosis and data security self-repair processing method provided by the present application comprises the following steps: During the operation of the solid state disk, the block erase time of each storage block is monitored, and when the block erase time of one or more storage blocks exceeds the early warning threshold for the first time, the storage block is marked as an early warning state; The change rate of the block erase time of the storage block marked as the early warning state is continuously monitored, and if the change rate of the block erase time exceeds the accelerated degradation threshold, it is determined that the storage block enters a high-risk state; Performing a hot data identification operation on the storage block in the high-risk state to identify data pages with wear values higher than a set level in the storage block; The identified high-wear value data pages are directionally migrated to the reserved healthy storage blocks, and after the migration is completed, a write protection locking operation is performed on the original high-risk state storage block.

[0005] Further, the early warning threshold is 1.5 to 3 times the reference erase time, and the reference erase time is obtained based on the historical failure sample statistics of the same batch of solid state disks.

[0006] Further, the step of performing a hot data identification operation on the storage block in the high-risk state to identify data pages with wear values higher than a set level in the storage block comprises: record the read disturb count and the program cycle count of all data pages in the memory block; compare the read disturb count of each data page with a preset read disturb threshold and the program cycle count with a preset cycle threshold; mark the data pages that exceed both the read disturb threshold and the program cycle threshold as high-wear data pages; generate a hot data identification table containing the physical addresses of all high-wear data pages.

[0007] Further, the step of recording the read disturb count and the program cycle count of all data pages in the memory block comprises: in response to the word line voltage fluctuation signal, convert the read operation that exceeds the voltage stability threshold into a read disturb count increment; capture the injection pulse signal of the charge pump and convert the program operation that completes the charge verification into a program cycle count increment; store the read disturb count in the non-volatile register of the memory block controller and the program cycle count in the physically isolated cycle marking unit.

[0008] Further, the step of directing the identified high-wear value data pages to migrate to the reserved healthy memory block comprises: during the idle period of the solid state disk, load the physical addresses of the high-wear data pages according to the hot data identification table, send a read instruction to the source high-risk memory block, and simultaneously initiate a double redundancy write to the target healthy memory block; only when the target healthy memory block returns two sets of write verification signals that are consistent, trigger the source high-risk memory block to erase the corresponding data pages; update the address mapping table to bind the logical addresses of the migrated data pages to the physical addresses of the healthy memory block, and generate a migration completion log.

[0009] Further, the healthy memory block is selected from a reserved pool independent of the user storage area, and the capacity of the reserved pool accounts for 0.5%-1% of the total capacity of the storage unit.

[0010] The present application provides a solid state disk fault pre-diagnosis and data safety self-repair processing device, comprising: a first marking unit for monitoring the block erase time of each memory block during the operation of the solid state disk, and marking the memory block as a pre-warning state when the block erase time of one or more memory blocks exceeds the pre-warning threshold for the first time; a second marking unit for continuously monitoring the block erase time change rate of the memory block marked as a pre-warning state, and determining that the memory block enters a high-risk state if the block erase time change rate exceeds the accelerated degradation threshold; a diagnosis unit for performing a hot data identification operation on the memory block in the high-risk state to identify data pages with wear values higher than a set level in the memory block; a repair unit configured to directively migrate the identified high-wear value data page to a reserved healthy storage block, and perform a write protection locking operation on the original high-risk storage block after the migration is completed.

[0011] Further, the diagnosis unit comprises: a memory subunit configured to record the read disturb count and the program cycle count of all data pages in the storage block; a comparison subunit configured to compare the read disturb count of each data page with a preset read disturb threshold and the program cycle count with a preset cycle threshold; a marking subunit configured to mark the data page that simultaneously exceeds the read disturb threshold and the program cycle threshold as a high-wear data page; a statistics subunit configured to generate a hot data identification table containing the physical addresses of all high-wear data pages.

[0012] Further, the repair unit comprises: a write subunit configured to, during an idle period of the solid state disk, load the physical addresses of high-wear data pages according to the hot data identification table, send a read instruction to the source high-risk storage block, and simultaneously initiate a double redundancy write to the target healthy storage block; an erase subunit configured to trigger the source high-risk storage block to erase the corresponding data page only when the target healthy storage block returns two sets of write verification signals that are consistent; an update subunit configured to update an address mapping table, bind the logical address of the migrated data page to the physical address of the healthy storage block, and generate a migration completion log.

[0013] The application also provides a solid state disk provided with the above device to specifically execute the above method through the device.

[0014] The solid state disk fault pre-diagnosis and data security self-repair processing method and device provided by the application have the beneficial effect of achieving early fault warning by dynamically monitoring the block erase time change rate, accurately positioning the high-wear data page in the high-risk storage block for directed migration, effectively avoiding the additional loss caused by full block migration, simultaneously using a redundancy verification mechanism to guarantee data integrity during the migration process, significantly prolonging the service life of the solid state disk and improving data security. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1 is a flowchart of the solid state disk fault pre-diagnosis and data security self-repair processing method in an embodiment of the application; Figure 2 is a structural block diagram of the solid state disk fault pre-diagnosis and data security self-repair processing device in an embodiment of the application.

[0016] The object, technical solutions and advantages of the present application will be further described in combination with embodiments and with reference to the drawings. DETAILED DESCRIPTION

[0017] In order to make the object, technical solutions and advantages of the present application clearer, the present application will be further described in combination with the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and not used to limit the present application.

[0018] Reference Figure 1 A flowchart of a solid state disk fault pre-diagnosis and data security self-repair processing method according to the present application is shown in the figure, and the method comprises the following steps: S1, during the operation of the solid state disk, the block erase time of each storage block is monitored, and when the block erase time of one or more storage blocks first exceeds a warning threshold, the storage block is marked as a warning state; S2, the change rate of the block erase time of the storage block marked as the warning state is continuously monitored, and if the change rate of the block erase time exceeds an accelerated degradation threshold, it is determined that the storage block enters a high-risk state; S3, a hot data identification operation is performed on the storage block in the high-risk state to identify data pages with a wear value higher than a set level in the storage block; S4, the identified high-wear-value data pages are migrated to a reserved healthy storage block, and after the migration is completed, a write protection locking operation is performed on the storage block in the original high-risk state.

[0019] Specifically, during the power-on operation of the solid state disk, the block erase time of each storage block is collected in real time by a physical layer timer; when the main control chip detects that the block erase time of a specific storage block first exceeds a warning threshold, it is immediately marked as a warning state by setting a state register of a storage block controller; thereafter, the firmware starts a high-frequency monitoring mode, and the block erase time of the storage block in the warning state is recorded once every 5 minutes, if the time increment in the continuous three recording periods exceeds the increment threshold and the single increment is greater than 120% of the previous one, it is determined that the storage block enters a high-risk state and triggers an interrupt signal; after the high-risk state is confirmed, the storage block controller calls the read disturbance count in the non-volatile register and the programming cycle number in the cycle marking unit, compares the preset read disturbance threshold and the programming cycle threshold, and writes the physical address of the data page that exceeds the threshold at the same time into a hot data identification table; during the idle period of the hard disk, the double-channel verification migration is initiated according to the hot data identification table: the data pages are read from the source high-risk storage block at the same time, and double redundancy writing is performed to the target healthy storage block, only when the two groups of write verification signals are consistent after being verified by the voltage comparator, the corresponding data pages of the source block are erased and the address mapping table is updated; immediately after the migration is completed, a write-prohibition instruction is sent to the high-risk storage block, a locking identification is written into the mapping table, and the locking time and the high-risk parameter are engraved into the physical marking log area.

[0020] The pre-warning threshold is 1.5 to 3 times of the reference erase time, which is obtained based on historical failure samples of the same batch of solid state disks.

[0021] In one embodiment, the step of performing a hot data identification operation on the storage block in a high-risk state, identifying data pages with a wear value higher than a set level in the storage block, includes: Recording the read disturb count and the number of program cycles of all data pages in the storage block; Comparing the read disturb count of each data page with a preset read disturb threshold, and the number of program cycles with a preset cycle threshold; Marking the data pages that exceed both the read disturb threshold and the program cycle threshold as high-wear data pages; Generating a hot data identification table containing the physical addresses of all high-wear data pages.

[0022] The step of recording the read disturb count and the number of program cycles of all data pages in the storage block includes: In response to the word line voltage fluctuation signal, converting the read operation that exceeds the voltage stability threshold into a read disturb count increment; Capturing the injection pulse signal of the charge pump, and converting the program operation that completes the charge verification into a program cycle count increment; Storing the read disturb count in the non-volatile register of the storage block controller, and storing the number of program cycles in the physically isolated cycle marking unit.

[0023] Specifically, when the storage block is determined to be in a high-risk state, the storage block controller immediately activates the hot data identification process: first, the word line voltage monitoring circuit captures the voltage fluctuation signal in the read operation in real time, if the fluctuation amplitude exceeds the preset voltage stability threshold, the read disturb count increment is triggered and the result is written into the non-volatile register; at the same time, the charge pump current sensor is used to collect the injection pulse signal, and the number of program cycles is accumulated by the pulse counter after each charge verification, and the accumulated value is stored in the cycle marking unit manufactured by deep well isolation process; after completing the parameter collection of all data pages, the hardware comparison module performs two comparisons in parallel: comparing the read disturb count value in the non-volatile register with the preset read disturb threshold, and comparing the number of program cycles in the cycle marking unit with the preset cycle threshold; when both parameters of the same data page exceed the limit, the address latch locks its physical address; finally, the DMA controller arranges all locked addresses in blocks in sequence to generate a hot data identification table and write it into the flash translation layer dedicated cache area.

[0024] Further, the word line voltage monitoring circuit captures the real-time voltage signal in the read operation through the detection pin directly coupled to the word line metal layer of the storage unit, the signal is input into the high-speed comparator after the common-mode noise is eliminated by the differential amplifier; the voltage stability threshold is set to ± 15% of the rated operating voltage of the storage unit by the precision adjustable resistance network, and the single-shot trigger generates a 50ns wide count pulse when the comparator detects that the fluctuation amplitude exceeds the limit; the pulse drives the 12-bit asynchronous counter to perform the accumulation operation, and the count result is written into the partitioned non-volatile register array composed of ferroelectric memories through the tristate buffer, and the register physical address is strictly mapped with the storage block row address; meanwhile, the counter overflow signal triggers the state register to be set, and a read interference event flag is generated for the host chip to poll.

[0025] When the address latch completes the physical address locking of the high-wear data page in the high-risk storage block, channel 0 of the DMA controller receives the 32-bit address sequence output by the latch; the discrete addresses are reorganized by the hardware sorting circuit according to the block continuity to generate a hot data identification table aligned with the 128-byte boundary; the table is transmitted to the flash translation layer dedicated cache area through the double data rate bus of the independent clock domain; the cache area is composed of physically isolated SRAM modules, and the storage controller writes the frame header identification containing the parity check code into the cache area after receiving the DMA transmission completion interrupt signal, and starts the write protection latch to map the cache area as a read-only attribute; finally, the consistency of the written data and the latch source address is compared through the verification circuit, and the verification result is recorded in the bit of the state register.

[0026] In one embodiment, the step of directing the identified high-wear value data page to the reserved healthy storage block includes: During the idle period of the solid state disk, the physical address of the high-wear data page is loaded according to the hot data identification table, a read instruction is sent to the source high-risk storage block, and a double redundancy write is initiated to the target healthy storage block; Only when the two groups of write verification signals returned by the target healthy storage block are consistent, the corresponding data page of the source high-risk storage block is erased; The address mapping table is updated, the logical address of the migrated data page is bound to the physical address of the healthy storage block, and a migration completion log is generated.

[0027] The above-mentioned healthy storage block is selected from a reserved pool independent of the user storage area, and the capacity of the reserved pool accounts for 0.5%-1% of the total capacity of the storage unit.

[0028] When the solid state disk enters an idle state, the main control chip loads high-wear data page information according to a hot data identification table physical address; a double-channel migration engine is activated synchronously, specifically, a read enable signal is sent to a row decoder of a source high-risk storage block, and two groups of independent charge pumps are driven to perform double-redundancy writing to a target healthy storage block, wherein the first group of writing paths triggers a programming voltage application after completing data temporary storage through a page buffer A, and the second group of paths performs verification read comparison through a page buffer B; only when the verification comparators of the two groups of paths output high levels at the same time, an AND gate circuit generates an erase trigger signal to set the block erase voltage enable line of the source high-risk storage block; after completing charge discharge, a mapping table update engine writes the mapping relationship between the original logical address and the healthy storage block physical address into an address mapping table latch, and engraves a migration completion log containing a timestamp and a migration block fingerprint in a physical marker log area, and the log storage depth priority covers the earliest record item.

[0029] Reference is made to the accompanying drawings Figure 2 A structural block diagram of a solid state disk fault pre-diagnosis and data security self-repair processing device is provided, and the device comprises: A first marking unit is configured to monitor the block erase time of each storage block during the operation of the solid state disk, and mark the storage block as a pre-warning state when the block erase time of one or more storage blocks exceeds a pre-warning threshold for the first time; A second marking unit is configured to continuously monitor the block erase time change rate of the storage block marked as the pre-warning state, and determine that the storage block enters a high-risk state if the block erase time change rate exceeds an accelerated degradation threshold; A diagnosis unit is configured to perform a hot data identification operation on the storage block in the high-risk state to identify data pages with a wear value higher than a set level in the storage block; A repair unit is configured to direct the identified high-wear value data pages to migrate to a reserved healthy storage block, and perform a write protection locking operation on the original high-risk storage block after the migration is completed.

[0030] During the power-on operation of the solid state disk, the block erase time of each storage block is collected in real time by a physical layer timer; when the first marking unit of the master control chip detects that the block erase time of a specific storage block first exceeds a warning threshold, the storage block controller is immediately set to a warning state through the state register; thereafter, the firmware second marking unit starts a high-frequency monitoring mode, and records the block erase time of the storage block in the warning state once every 5 minutes; if the time increment in the continuous three recording periods exceeds the increment threshold and the single increment is greater than 120% of the previous increment, it is determined that the storage block enters a high-risk state and an interrupt signal is triggered; after the high-risk state is confirmed, the storage block controller calls the diagnostic unit in the non-volatile register to read the interference count and the programming cycle number in the cycle marking unit, compares the preset read interference threshold and the programming cycle threshold, and writes the physical address of the data page that exceeds the threshold at the same time into a hot data identification table; during the idle period of the hard disk, the repair unit initiates a dual-channel verification migration according to the hot data identification table: while reading the data page from the source high-risk storage block, a double-redundancy write is performed to the target healthy storage block, and only when the two groups of write verification signals are consistent after being verified by the voltage comparator, the corresponding data page of the source block is erased and the address mapping table is updated; immediately after the migration is completed, a write-prohibition instruction is sent to the high-risk storage block, a locking identification is written into the mapping table, and the locking time and the high-risk parameter are engraved into the physical marking log area.

[0031] Further, the diagnostic unit comprises: a memory subunit configured to record the read interference count and the programming cycle number of all data pages in the storage block; a comparison subunit configured to compare the read interference count and the preset read interference threshold, and the programming cycle number and the preset cycle threshold of each data page; a marking subunit configured to mark the data page that exceeds the read interference threshold and the programming cycle threshold at the same time as a high-wear data page; a statistical subunit configured to generate a hot data identification table containing the physical address of all high-wear data pages.

[0032] Specifically, when the storage block is determined to be in a high-risk state, the storage block controller immediately activates a hot data identification process: first, the voltage fluctuation signal in the read operation is captured in real time through the word line voltage monitoring circuit, and if the fluctuation amplitude exceeds the preset voltage stability threshold, the read disturbance count is incremented and the result is written to the memory subunit of the non-volatile register; simultaneously, the charge pump current sensor is used to collect the injection pulse signal, and the programming cycle count is accumulated by the pulse counter after each charge verification, and the accumulated value is stored in the cycle marker unit manufactured by deep well isolation process; after completing the collection of all data page parameters, the hardware comparison module performs two comparisons in parallel: comparing the read disturbance count value in the non-volatile register with the preset read disturbance threshold, and comparing the programming cycle count in the cycle marker unit with the preset cycle threshold; when both parameters of the same data page exceed the limit, the address latch locks its physical address; finally, the DMA controller arranges all locked addresses in a block and generates a hot data identification table which is written to the flash translation layer dedicated cache area.

[0033] And the repair unit comprises: a write subunit, configured to load the physical address of the high-wear data page according to the hot data identification table during the idle period of the solid state disk, send a read instruction to the source high-risk storage block, and initiate a double redundancy write to the target healthy storage block; an erase subunit, configured to trigger the source high-risk storage block to erase the corresponding data page only when the target healthy storage block returns two sets of write verification signals that are consistent; an update subunit, configured to update the address mapping table, bind the logical address of the migrated data page to the physical address of the healthy storage block, and generate a migration completion log.

[0034] Specifically, when the solid state disk enters an idle state, the main control chip loads the high-wear data page information according to the physical address of the hot data identification table; a double-channel migration engine is activated synchronously, specifically, a read enable signal is sent to the row decoder of the source high-risk storage block, and two sets of independent charge pumps are driven to perform double redundancy write to the target healthy storage block, wherein the first set of write paths triggers the programming voltage application after completing data storage through the page buffer A, and the second set of paths performs verification read comparison through the page buffer B; only when the verification comparators of the two sets of paths output high level at the same time, an AND gate circuit generates an erase trigger signal to set the block erase voltage enable line of the source high-risk storage block; after completing the charge discharge, the mapping table update engine writes the mapping relationship between the original logical address and the physical address of the healthy storage block into the address mapping table latch, and engraves the migration completion log containing the timestamp and the migration block fingerprint in the physical marker log area, and the log storage depth priority covers the earliest record item.

[0035] The application is applied to a solid state disk which is provided with the above-mentioned device to specifically execute the above-mentioned method.

[0036] In summary, during the operation of the solid state disk, the block erase time of each storage block is monitored, when the block erase time of one or more storage blocks first exceeds the early warning threshold, the storage block is marked as an early warning state; the change rate of the block erase time of the storage block marked as the early warning state is continuously monitored, if the change rate of the block erase time exceeds the accelerated degradation threshold, it is determined that the storage block enters a high-risk state; a hot data identification operation is performed on the storage block in the high-risk state to identify data pages with a wear value higher than a set level in the storage block; the identified high-wear value data pages are migrated to a reserved healthy storage block, and after the migration is completed, a write protection locking operation is performed on the storage block in the original high-risk state; the effect of data security active protection and storage life collaborative optimization is realized.

[0037] The above is only the preferred embodiment of the present application, and does not limit the patent scope of the present application, any equivalent structure or equivalent flow transformation using the content of the specification and drawings of the present application, or direct or indirect application in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A solid state disk fault pre-diagnosis and data security self-repair processing method, characterized in that, The method comprises the steps of: monitoring the block erase time of each storage block during the operation of the solid state disk, and marking the storage block as a pre-warning state when the block erase time of one or more storage blocks first exceeds a pre-warning threshold; continuously monitoring the block erase time change rate of the storage block marked as the pre-warning state, and determining that the storage block enters a high-risk state if the block erase time change rate exceeds an accelerated degradation threshold; performing a hot data identification operation on the storage block in the high-risk state to identify data pages with wear values higher than a set level in the storage block; directing the identified high-wear-value data pages to migrate to a reserved healthy storage block, and performing a write protection locking operation on the storage block in the high-risk state after the migration is completed.

2. The solid state drive fault pre-diagnosis and data security self-repair processing method of claim 1, wherein, The pre-warning threshold is 1.5 to 3 times the reference erase time, which is obtained based on historical failure samples of the same batch of solid state disks.

3. The solid state drive fault pre-diagnosis and data security self-repair processing method of claim 1, wherein, The step of performing a hot data identification operation on the storage block in the high-risk state to identify data pages with wear values higher than a set level in the storage block comprises: recording the read disturb count and the programming cycle count of all data pages in the storage block; comparing the read disturb count of each data page with a preset read disturb threshold and the programming cycle count with a preset cycle threshold; marking the data pages that simultaneously exceed the read disturb threshold and the programming cycle threshold as high-wear data pages; generating a hot data identification table containing the physical addresses of all high-wear data pages.

4. The solid state drive fault pre-diagnosis and data security self-repair processing method of claim 3, wherein, The step of recording the read disturb count and the programming cycle count of all data pages in the storage block comprises: in response to a word line voltage fluctuation signal, converting a read operation that exceeds a voltage stability threshold into a read disturb count increment; capturing an injection pulse signal of a charge pump to convert a programming operation that completes charge verification into a programming cycle count increment; storing the read disturb count in a non-volatile register of the storage block controller and the programming cycle count in a physically isolated cycle marking unit.

5. The solid state drive fault pre-diagnosis and data security self-repair processing method of claim 3, wherein, The step of directing the identified high-wear-value data pages to migrate to a reserved healthy storage block comprises: during the idle period of the solid state disk, loading the physical addresses of the high-wear data pages according to the hot data identification table, sending a read instruction to the source storage block in the high-risk state, and initiating a double redundancy write to the target healthy storage block; triggering the source storage block in the high-risk state to erase the corresponding data pages only when the target healthy storage block returns two sets of write verification signals that are consistent; updating the address mapping table to bind the logical addresses of the migrated data pages to the physical addresses of the healthy storage block, and generating a migration completion log.

6. The solid state drive fault pre-diagnosis and data security self-repair processing method of claim 5, wherein, The healthy storage block is selected from a reserved pool independent of the user storage area, and the capacity of the reserved pool accounts for 0.5%-1% of the total capacity of the storage unit.

7. A solid state disk fault pre-diagnosis and data security self-repair processing device, characterized in that, The method comprises the steps of: a first marking unit is configured to monitor the block erase time of each storage block during the operation of the solid state disk, and mark the storage block as a pre-warning state when the block erase time of one or more storage blocks first exceeds a pre-warning threshold; a second marking unit is configured to continuously monitor the block erase time change rate of the storage block marked as the pre-warning state, and determine that the storage block enters a high-risk state if the block erase time change rate exceeds an accelerated degradation threshold; A diagnosis unit is configured to perform a hot data identification operation on the high-risk storage block to identify data pages with wear values higher than a set level within the storage block. A repair unit is configured to perform a targeted migration of the identified high-wear data pages to a reserved healthy storage block, and perform a write protection locking operation on the original high-risk storage block after the migration is completed.

8. The solid state drive failure pre-diagnosis and data security self-repair processing apparatus according to claim 7, characterized in that, The diagnosis unit comprises: A memory subunit configured to record the read disturb count and program cycle count of all data pages within the storage block; A comparison subunit configured to compare the read disturb count of each data page with a preset read disturb threshold, and compare the program cycle count with a preset cycle threshold; A marking subunit configured to mark data pages that exceed both the read disturb threshold and the program cycle threshold as high-wear data pages; A statistics subunit configured to generate a hot data identification table containing the physical addresses of all high-wear data pages.

9. The solid state drive failure pre-diagnosis and data security self-repair processing apparatus according to claim 8, characterized in that, The repair unit comprises: A write subunit configured to load the physical addresses of high-wear data pages according to the hot data identification table during the idle period of the solid state disk, send a read instruction to the source high-risk storage block, and initiate a double redundancy write to the target healthy storage block; An erase subunit configured to trigger the source high-risk storage block to erase the corresponding data pages only when the target healthy storage block returns two sets of write verification signals that are consistent; An update subunit configured to update the address mapping table, bind the logical addresses of the migrated data pages to the physical addresses of the healthy storage block, and generate a migration completion log.

10. A solid state drive, comprising: The device of any one of claims 7-8 is deployed to specifically perform the method of any one of claims 1-6.

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