Metal film deposition method and metal film
By performing metal deposition and curing treatment on a substrate, the problem of poor crystal quality of metal thin films prepared by electron beam evaporation is solved, and high-quality metal thin films can be deposited and directly applied on a variety of substrates.
Patent Information
- Application Number
- CN202511004506.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-21
- Publication Date
- 2025-11-11
AI Technical Summary
In the existing technology, the metal thin films prepared by electron beam evaporation have poor crystal quality and small crystal domain size, and there are difficulties in transferring the metal thin films to single-crystal copper substrates, and there is a lack of effective peeling methods.
By employing a method of sequential metal deposition and ripening treatments, and by dynamically controlling atomic adsorption and diffusion behavior, a progressive mechanism of atomic adsorption, diffusion recombination, and preferential growth is designed. Combined with substrate pretreatment and multiple cycles of deposition and ripening operations, the crystal quality is improved.
It significantly improves the crystallinity quality of metal thin films, reduces the density of interface defects, achieves high-quality metal thin film deposition, is suitable for a variety of substrates, eliminates the need for complex stripping processes, and improves process operability.
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Figure CN120924910A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of quantum chip manufacturing technology, and in particular to a metal thin film deposition method and a metal thin film. Background Technology
[0002] In the manufacturing process of superconducting quantum chips, the deposition of metal thin films is a crucial process that directly affects the quality of the metal thin film and, consequently, the performance of the superconducting quantum chip. Therefore, obtaining metal thin films with high crystallinity is of paramount importance. Current technologies primarily employ physical vapor deposition (PVD) to prepare metal thin films. During this process, an electron beam bombards a target, and metal atoms escaping from the surface land on the wafer surface to form the corresponding metal thin film. However, metal thin films deposited using traditional electron beam evaporation (EBD) methods exhibit several significant defects, such as small domain sizes, leading to a marked decrease in the crystallinity of the metal thin film and severely impacting the performance of the superconducting quantum chip. Furthermore, current methods lack suitable stripping techniques for transferring the prepared metal thin film to a suitable substrate, while direct deposition on single-crystal copper substrates presents challenges due to the high difficulty in preparing single-crystal copper substrates and their limited applicability. These issues highlight the continued challenges in metal thin film deposition, making it imperative to develop a metal thin film deposition method that offers high crystallinity and ease of operation. Summary of the Invention
[0003] To address the technical problem of poor crystallinity in the preparation of metal thin films using traditional electron beam evaporation deposition methods, and to overcome the crystallinity defects characterized by small domain size and high grain boundary defect density, this invention proposes a metal thin film deposition method that employs a sequential metal deposition and aging process to prepare metal thin films with high crystallinity.
[0004] The first aspect of the present invention provides a method for depositing a metal thin film, comprising:
[0005] S1, Provide a substrate;
[0006] S2. The substrate is subjected to metal deposition and aging processes in sequence to obtain a metal film of the target thickness on the substrate surface.
[0007] In some implementations, step S2 includes:
[0008] S21. A first metal thin film is deposited on the substrate at a first preset deposition rate within a first time period;
[0009] S22, interrupt deposition and perform aging treatment on the first metal film during the second time period;
[0010] S23. Determine whether the thickness of the metal film after aging treatment has reached the target thickness;
[0011] If so, obtain a metal film of the target thickness and exit;
[0012] If not, return to step S21; that is, obtain a metal film of the target thickness on the substrate surface by cyclically performing metal deposition and curing processes.
[0013] Optionally, the first time period is 2-4 seconds, and the first preset deposition rate is... The deposition temperature is 100-300℃.
[0014] Optionally, the second time period is 1-10 seconds.
[0015] In some implementations, step S2 includes:
[0016] S21. A second metal thin film is deposited on the substrate at a second preset deposition rate during the third time period;
[0017] S22, interrupt deposition and ripen the second metal film during the fourth time period;
[0018] S23. On the second metal film after aging treatment, a metal film is deposited at a third preset deposition rate to make the metal film thickness meet the target thickness; that is, a metal film of the target thickness is obtained on the substrate surface through a first metal deposition treatment, aging treatment and a second metal deposition treatment.
[0019] Optionally, the second preset deposition rate is less than the third preset deposition rate.
[0020] Further optionally, the second preset deposition rate is The third preset deposition rate is:
[0021] Optionally, the third time period is shorter than the fourth time period.
[0022] Further optionally, the third time period is 2-4 seconds, and the fourth time period is 1-10 minutes.
[0023] By controlling the second preset deposition rate to be less than the third preset deposition rate and the third time period to be less than the fourth time period, the crystallinity quality of the metal thin film is improved. In this embodiment, the deposition process at the second preset deposition rate is equivalent to pre-deposition, and the deposition process at the third preset deposition rate is equivalent to formal deposition. By adopting pre-deposition followed by deposition, lattice defects are reduced, and the quality of the metal thin film is improved.
[0024] In some embodiments, the method of treating the substrate before depositing a metal thin film on the substrate includes:
[0025] Provide a clean substrate;
[0026] The substrate is subjected to a first annealing process.
[0027] Optionally, the conditions for the first annealing treatment include: placing the substrate in an inert gas atmosphere at 1000-1050°C for 0.5-2 hours.
[0028] In some embodiments, after step S2, the deposited gold film undergoes a second annealing treatment.
[0029] Optionally, the conditions for the second annealing treatment include: placing the metal film in an inert gas atmosphere at 200-400°C for 2-3 hours.
[0030] Optionally, metal thin films can be obtained by electron beam evaporation.
[0031] A second aspect of the present invention provides a metal thin film, which is prepared by the metal thin film deposition method described above, wherein the sheet resistance of the metal thin film is less than 0.33Ω.
[0032] Beneficial effects:
[0033] This invention provides a method for depositing metal thin films and a metal thin film, which has the following advantages:
[0034] (1) The present invention performs metal deposition and curing treatment on the substrate in sequence. By dynamically controlling the atomic adsorption and diffusion behavior, a progressive action mechanism of atomic adsorption, diffusion recombination and preferential growth is designed. This transforms the random nucleation of the traditional deposition process into controllable preferential growth, reduces the interface defect density of the metal film, and significantly improves the crystal quality.
[0035] (2) The present invention further optimizes the crystal structure by performing metal deposition and ripening treatment in cycles, through multiple alternating atomic supply (deposition) and atomic recombination (ripening), eliminating local defects in each cycle, avoiding defect accumulation, and realizing the gradual repair of the crystal structure. Short-term deposition and ripening are carried out alternately, and finally the crystal is guided to grow along the low-energy crystal plane through multiple cycles to generate a metal film with high crystal quality.
[0036] (3) The present invention can also improve the orderliness of the crystallization process and improve the crystal quality by first depositing at a second preset deposition rate, then performing a curing treatment, and then performing a deposition treatment at a third preset deposition rate, while controlling the second preset deposition rate to be less than the third preset deposition rate. A high-density atomic adsorption layer is introduced on the substrate surface using low-rate evaporation, then deposition is interrupted to enter the curing stage, activating the diffusion of metal atoms on the substrate surface, and then high-rate evaporation is used to achieve orderly crystal growth, reducing the density of nucleation sites and inhibiting grain boundary formation, thereby improving the crystal quality.
[0037] (4) In this invention, the substrate is pretreated before metal deposition to create a good deposition interface. The substrate is ultrasonically cleaned with an organic solvent, and then the crystal surface morphology is optimized by high-temperature annealing. Clear step flow lines are obtained through high-temperature annealing, which reduces the nucleation barrier of metal atoms and further promotes metal deposition on the substrate surface, providing fundamental support for improving crystal quality.
[0038] (5) The process of the present invention is highly operable and has a wide range of substrate selection. It does not rely on substrates with complex preparation processes such as single crystal silicon as epitaxial substrates, nor does it require a stripping process after preparation to transfer to a suitable substrate. It only requires optimizing the process conditions of metal thin film deposition to directly deposit metal on the surface of the required substrate and grow a uniform high-crystal quality metal thin film. It eliminates the cumbersome stripping and transfer process, has high practical value, and has broad application prospects. Attached Figure Description
[0039] Figure 1 A process flow diagram of the metal thin film deposition method provided in Embodiment 1 of the present invention;
[0040] Figure 2 A schematic diagram of the crystallization process of the metal thin film deposition method provided in Embodiment 1 of the present invention;
[0041] Figure 3 A process flow diagram of the metal thin film deposition method provided in Embodiment 2 of the present invention;
[0042] Figure 4 A schematic diagram of the crystallization process of the metal thin film deposition method provided in Embodiment 2 of the present invention. Detailed Implementation
[0043] The first aspect of the present invention provides a method for depositing a metal thin film, comprising:
[0044] S1, Provide a substrate;
[0045] S2. The substrate is subjected to metal deposition and aging processes in sequence to obtain a metal film of the target thickness on the substrate surface.
[0046] This invention improves the crystallinity of metal thin films by sequentially performing metal deposition and ripening treatments on the substrate. The deposition process, as the core driving force for crystal growth, continuously supplies a flux of metal atoms to construct the metal thin film structure. The ripening treatment drives metal atom recombination through surface diffusion, significantly reducing nucleation density and improving crystal order through the migration and merging of small atomic clusters into larger ones. By dynamically controlling atomic adsorption and diffusion behavior, a progressive mechanism of atomic adsorption, diffusion recombination, and preferred growth is designed, transforming the random nucleation of traditional deposition processes into controllable preferred growth. This reduces the interface defect density of the metal thin film and significantly improves crystallinity.
[0047] In some implementations, step S2 includes:
[0048] S21. A first metal thin film is deposited on the substrate at a first preset deposition rate within a first time period;
[0049] S22, interrupt deposition and perform aging treatment on the first metal film during the second time period;
[0050] S23. Determine whether the thickness of the metal film after aging treatment has reached the target thickness;
[0051] If so, obtain a metal film of the target thickness and exit;
[0052] If not, return to step S21; that is, obtain a metal film of the target thickness on the substrate surface by cyclically performing metal deposition and curing processes.
[0053] Optionally, the first time period is 2-4 seconds, and the first preset deposition rate is... The deposition temperature is 100-300℃.
[0054] Optionally, the second time period is 1-10 seconds.
[0055] One core approach of this invention improves crystal quality through cyclic metal deposition and ripening processes. The core involves multiple alternating atomic supply (deposition) and atomic recombination (ripening) to progressively optimize the crystal structure, achieving a "step-by-step" improvement in crystal quality. This approach employs a dynamic mechanism, eliminating local defects through ripening after each metal deposition, thus avoiding a sudden increase in nucleation sites and stress accumulation during a single high-throughput deposition process. During operation, a high evaporation rate is used to rapidly introduce a high flux of metal atoms, forming an adsorption layer on the substrate surface. A relatively short deposition time (first time period of 1-10 s) is then controlled to prevent rapid proliferation of grain boundaries and dislocations, achieving local crystal expansion. Ripening then interrupts deposition, allowing unstable small atomic clusters to migrate and merge with neighboring large atomic clusters, eliminating weak binding sites, reducing nucleation density, and optimizing the crystal structure. Further cycles of deposition and ripening are performed, with each cycle eliminating local defects and preventing defect accumulation, thus achieving gradual repair of the crystal structure. Short-term deposition and ripening are alternated to reduce thermal stress and lattice mismatch stress. Finally, through multiple cycles, the crystal is guided to grow along a low-energy crystal plane to generate a high-crystallinity metal film.
[0056] In some implementations, step S2 includes:
[0057] S21. A second metal thin film is deposited on the substrate at a second preset deposition rate during the third time period;
[0058] S22, interrupt deposition and ripen the second metal film during the fourth time period;
[0059] S23. On the second metal film after aging treatment, continue to deposit a metal film at a third preset deposition rate so that the thickness of the metal film meets the target thickness.
[0060] Optionally, the second preset deposition rate is less than the third preset deposition rate.
[0061] Further optionally, the second preset deposition rate is The third preset deposition rate is:
[0062] Optionally, the third time period is shorter than the fourth time period.
[0063] Further optionally, the third time period is 2-4 seconds, and the fourth time period is 1-10 minutes.
[0064] Another core solution of this invention involves first performing short-time deposition (equivalent to pre-deposition treatment) at a second preset deposition rate, followed by curing treatment, and then performing long-time deposition (equivalent to formal deposition) at a third preset deposition rate. This three-step operation of low-speed pre-deposition, curing, and high-speed deposition improves the orderliness of the crystallization process and enhances crystallization quality. This solution primarily addresses the issue that when direct deposition is performed, the initial metal atom distribution on the substrate surface is relatively scattered, easily forming numerous nucleation sites, resulting in high grain boundary defect density and poor crystallization quality during the crystallization process. Low-rate evaporation (deposition rate ≤...) is employed. A high-density atomic adsorption layer is introduced on the substrate surface. At this point, two types of nucleation sites exist simultaneously on the substrate surface: stable large atomic clusters with high binding energy, serving as nuclei for subsequent crystal growth; and unstable small nucleation sites, which are prone to migration or dissociation due to size effects or surface energy differences. Further, deposition is interrupted to enter a ripening stage, promoting metal atom diffusion on the substrate surface. During this stage, atoms in the unstable small nucleation sites migrate to neighboring stable large atomic clusters through surface diffusion. The large atomic clusters achieve size growth by capturing free atoms, reducing surface energy and enhancing structural stability. The atomic clusters merge during the ripening stage, optimizing the nucleation sites. A secondary metal deposition process is then performed, using high-rate evaporation to achieve ordered crystal growth. The pre-optimized large atomic clusters act as "seeds," guiding metal atoms to grow epitaxially along low-energy crystal planes, reducing nucleation site density and suppressing grain boundary formation, thus reducing grain boundary defects and improving crystal quality.
[0065] In some embodiments, the curing operation is achieved by a baffle; for example, when a substrate is placed in a deposition chamber for metal deposition, the baffle of the deposition chamber is opened when curing is required to prevent metal atoms from falling onto the substrate, thereby achieving curing.
[0066] In some embodiments, the method of treating the substrate before depositing a metal thin film on the substrate includes:
[0067] Provide a clean substrate;
[0068] The substrate is subjected to a first annealing process.
[0069] Optionally, the conditions for the first annealing treatment include: placing the substrate in an inert gas atmosphere at 1000-1050°C for 0.5-2 hours.
[0070] Optionally, the clean substrate can be obtained by ultrasonic or plasma cleaning in an organic solvent. For example, the substrate can be immersed in an organic solvent and ultrasonically cleaned, then removed, dried, and then plasma cleaned to obtain a clean substrate.
[0071] Optionally, the organic solvent may include methanol, ethanol, ethyl acetate, methyl acetate, acetonitrile, tetrahydrofuran, N-methylpyrrolidone, acetone, isopropanol, etc.
[0072] In some embodiments, the organic solvent may be a polar organic solvent such as acetone or isopropanol.
[0073] In some embodiments, the step of obtaining the clean substrate includes: immersing the substrate in acetone and sonicating for 5-20 minutes, then immersing it in isopropanol and sonicating for 5-20 minutes, removing it and drying it with nitrogen, and then performing oxygen plasma cleaning to obtain a clean substrate.
[0074] The substrate material includes, but is not limited to, silicon substrates (e.g., single-crystal silicon, intrinsic silicon, high-resistivity silicon, silicon carbide, etc.) or sapphire (main component Al2O3); optionally, the substrate material is sapphire.
[0075] Before metal deposition, this invention pre-treats the substrate to establish a good deposition interface. First, the substrate is ultrasonically cleaned using organic solvents such as acetone and isopropanol to remove impurities and prevent particulate contaminants from interfering with subsequent deposition and curing processes. Then, a high-temperature annealing process is employed, placing the substrate at 1000-1050℃ for 0.5-2 hours to optimize the crystal surface morphology. The initial substrate microstructure contains natural atomic-level steps. High-temperature annealing allows surface atoms to diffuse along the step edges through thermal migration, reconstructing the step structure and resulting in clearer step flow patterns. These flow patterns further reduce the substrate surface energy by lowering the surface dangling bond density, and the step edges act as highly active sites, lowering the nucleation barrier for metal atoms and further promoting metal deposition on the substrate surface, providing fundamental support for improving crystal quality.
[0076] In some embodiments, after step S2, the deposited gold film undergoes a second annealing treatment.
[0077] Optionally, the conditions for the second annealing treatment include: placing the metal film in an inert gas atmosphere at 200-400°C for 2-3 hours.
[0078] In some embodiments, after the second annealing treatment, the temperature is lowered to room temperature, the metal film is purged with an inert gas, and then the substrate with the metal film on the surface is transferred to an inert gas atmosphere for storage to avoid contact with air and cause degradation of the film performance.
[0079] In some embodiments, the metal deposition process is performed by electron beam evaporation.
[0080] The present invention does not impose any particular limitation on the container for storing metal thin film samples, as long as it can achieve the storage purpose, such as a glove box.
[0081] Optionally, the metal deposited during the metal deposition process includes aluminum, copper, gold, palladium, nickel, silver, chromium, indium, or tantalum.
[0082] In some embodiments, the metal deposited during the metal deposition process is aluminum.
[0083] In some embodiments, the inert gas involved in the process of the present invention is not particularly limited, as long as it can achieve the purpose of protection, such as argon or nitrogen.
[0084] A second aspect of the present invention provides a metal thin film, which is prepared by the metal thin film deposition method described above, and the sheet resistance of the metal thin film is less than 0.33Ω.
[0085] Optionally, the thickness of the metal thin film is 10-500 nm; more preferably, the thickness of the metal thin film is 50-200 nm; for example: 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm; in some embodiments, the thickness of the metal thin film is 100 nm.
[0086] The thickness of the metal thin film defined in this invention refers to the overall thickness of the metal thin film after processing by the metal thin film deposition method.
[0087] Example 1
[0088] The first aspect of this embodiment provides a method for depositing a metal thin film, including:
[0089] S1. Provide a clean substrate and perform a first annealing treatment on the substrate; the steps include:
[0090] S1.1 The substrate (made of sapphire) is first immersed in acetone and ultrasonically treated for 10 minutes; then immersed in isopropanol and ultrasonically treated for 10 minutes. After removal, the residual solution on the substrate surface is dried with a nitrogen gun, and then transferred to an oxygen plasma machine for cleaning for 10 minutes to obtain a clean substrate.
[0091] S1.2 The substrate is transferred to an annealing furnace, and the temperature is raised to 1025°C under an argon atmosphere to perform a first annealing treatment on the substrate for 1 hour.
[0092] S2. The substrate is subjected to metal deposition and aging processes in sequence to obtain a metal film of the target thickness on the substrate surface.
[0093] In this embodiment, step S2 includes:
[0094] S21. Within a first time period, a first metal thin film is deposited on the substrate at a first preset deposition rate; specifically: the substrate after the first annealing treatment is placed in the deposition chamber, and the temperature is raised to 150°C to begin deposition. Metal deposition was performed at a first preset deposition rate. The deposited metal was aluminum. The first time period was 3 seconds. The pressure during the deposition process was 1 × 10⁻⁶. -5 torr;
[0095] S22. Interrupt deposition and perform aging treatment on the first metal film during the second time period; specifically: open the baffle of the deposition chamber to interrupt deposition, and the second time period is 3s;
[0096] S23. Determine whether the thickness of the metal film after aging treatment has reached the target thickness;
[0097] If so, obtain a metal film of the target thickness and exit;
[0098] If not, return to step S21; repeat the metal deposition and curing process until the metal film thickness reaches 100 nm, thus completing the metal film deposition.
[0099] S3. Perform a second annealing treatment on the deposited metal film; the steps include:
[0100] The metal film was transferred to the reaction chamber and kept at 300°C in an argon atmosphere for 2.5 hours for a second annealing treatment. After the second annealing treatment, it was cooled to room temperature (25°C), the metal film was purged with nitrogen, and then transferred to a nitrogen atmosphere for storage.
[0101] The second aspect of this embodiment provides a metal thin film, which is prepared by the metal thin film deposition method described above, and the sheet resistance of the metal thin film is 0.24Ω.
[0102] The process flow diagram of the metal thin film deposition method provided in Embodiment 1 of the present invention is shown below. Figure 1 See the schematic diagram of the crystallization process. Figure 2 .
[0103] Example 2
[0104] The first aspect of this embodiment provides a method for depositing a metal thin film, including:
[0105] S1. Provide a clean substrate and perform a first annealing treatment on the substrate; the steps are the same as step S1 in Embodiment 1.
[0106] S2. The substrate is subjected to metal deposition and aging processes in sequence to obtain a metal film of the target thickness on the substrate surface.
[0107] In this embodiment, step S2 includes:
[0108] S21. During the third time period, a second metal thin film is deposited on the substrate at a second preset deposition rate; specifically: the substrate after the first annealing treatment is placed in the deposition chamber, the temperature is raised to 150°C to begin deposition, first at... The second preset deposition rate was used for metal deposition, with aluminum as the deposited metal. The third time period was 3 seconds, and the pressure during deposition was 1×10⁻⁶. -5 torr;
[0109] S22. Interrupt deposition and perform aging treatment on the second metal film within the fourth time period; specifically: open the baffle of the deposition chamber to interrupt deposition and perform aging treatment, the fourth time period is 6 minutes;
[0110] S23. On the second metal film after aging treatment, continue to deposit a metal film at a third preset deposition rate until the metal film thickness meets the target thickness; specifically: close the baffle, so that... Metal deposition was performed at the third preset deposition rate. The deposited metal was aluminum, and the pressure during the deposition process was 1×10⁻⁶. -5 The metal film deposition process is completed by depositing torr until the metal film thickness reaches 100 nm.
[0111] S3. Perform a second annealing treatment on the deposited metal film; the steps are the same as step S3 in Example 1.
[0112] The second aspect of this embodiment provides a metal thin film, which is prepared by the metal thin film deposition method described above, and the sheet resistance of the metal thin film is 0.31Ω.
[0113] The process flow diagram of the metal thin film deposition method provided in Embodiment 2 of the present invention is shown below. Figure 3 See the schematic diagram of the crystallization process. Figure 4 .
[0114] Comparative Example 1
[0115] The first aspect of this comparative example provides a method for depositing a metal thin film, comprising:
[0116] S1. Provide a clean substrate and perform a first annealing treatment on the substrate; the steps are the same as step S1 in Embodiment 1.
[0117] S2. Perform metal deposition on the substrate to obtain a metal thin film of the target thickness on the substrate surface; the steps specifically include:
[0118] The substrate after the first annealing treatment was placed in the deposition chamber, and the temperature was raised to 150°C to begin deposition. Metal deposition was performed at a deposition rate of 1 × 10⁻⁶ m / s. The deposited metal was aluminum, and the pressure during the deposition process was 1 × 10⁻⁶ m / s. -5 torr; deposit until the metal film thickness reaches 100nm, completing the metal film deposition.
[0119] S3. Perform a second annealing treatment on the metal film; the steps are the same as S3 in Example 1.
[0120] In this comparative example, the substrate was directly subjected to metal deposition to obtain a metal film of the target thickness (i.e., no curing treatment was performed).
[0121] The second aspect of this comparative example provides a metal thin film, which is prepared by the metal thin film deposition method described above, and the sheet resistance of the metal thin film is 0.48Ω.
[0122] Comparative Example 2
[0123] This comparative example provides a metal thin film deposition method, the specific implementation of which is the same as in Example 1; the difference is that, with Metal deposition is performed at the first preset deposition rate.
[0124] The second aspect of this comparative example provides a metal thin film, which is prepared by the metal thin film deposition method described above, and the sheet resistance of the metal thin film is 0.33Ω.
[0125] Comparative Example 3
[0126] This comparative example provides a metal thin film deposition method, with the specific implementation method being the same as in Example 1; the difference is that the first time period and the second time period are both 5s.
[0127] The second aspect of this comparative example provides a metal thin film, which is prepared by the metal thin film deposition method described above, and the sheet resistance of the metal thin film is 0.37Ω.
Claims
1. A method for depositing metal thin films, characterized in that, include: S1, Provide a substrate; S2. The substrate is subjected to metal deposition and aging processes in sequence to obtain a metal film of the target thickness on the substrate surface.
2. The metal thin film deposition method according to claim 1, characterized in that, Step S2 includes: S21. A first metal thin film is deposited on the substrate at a first preset deposition rate within a first time period; S22, interrupt deposition and perform aging treatment on the first metal film during the second time period; S23. Determine whether the thickness of the metal film after aging treatment has reached the target thickness; If so, obtain a metal film of the target thickness and exit; If not, return to step S21.
3. The metal thin film deposition method according to claim 2, characterized in that, The first time period is 2-4 seconds, and the first preset deposition rate is... The deposition temperature is 100-300℃.
4. The metal thin film deposition method according to claim 3, characterized in that, The second time period is 1-10 seconds.
5. The metal thin film deposition method according to claim 1, characterized in that, Step S2 includes: S21. A second metal thin film is deposited on the substrate at a second preset deposition rate during the third time period; S22, interrupt deposition and ripen the second metal film during the fourth time period; S23. On the second metal film after aging treatment, continue to deposit a metal film at a third preset deposition rate so that the thickness of the metal film meets the target thickness.
6. The metal thin film deposition method according to claim 5, characterized in that, The second preset deposition rate is less than the third preset deposition rate.
7. The metal thin film deposition method according to claim 6, characterized in that, The second preset deposition rate is The third preset deposition rate is:
8. The metal thin film deposition method according to claim 5, characterized in that, The third time period is shorter than the fourth time period.
9. The metal thin film deposition method according to claim 8, characterized in that, The third time period is 2-4 seconds, and the fourth time period is 1-10 minutes.
10. The metal thin film deposition method according to claim 1, characterized in that, The method for processing the substrate before depositing a metal thin film on the substrate includes: Provide a clean substrate; The substrate is subjected to a first annealing treatment; The conditions for the first annealing treatment include: placing the substrate in an inert gas atmosphere at 1000-1050°C for 0.5-2 hours.
11. The metal thin film deposition method according to claim 1, characterized in that, After step S2, the deposited gold film is subjected to a second annealing treatment; The conditions for the second annealing treatment include: placing the metal film in an inert gas atmosphere at 200-400°C for 2-3 hours.
12. The metal thin film deposition method according to any one of claims 1-11, characterized in that, Metal thin films are obtained by electron beam evaporation.
13. A metal thin film, prepared by the metal thin film deposition method according to any one of claims 1-12, characterized in that, The sheet resistance of the metal thin film is less than 0.33Ω.