System, apparatus, and method for monitoring temperature of plate for semiconductor fabrication

Abstract

The invention relates to a system, an apparatus and a method for monitoring the temperature of a plate for semiconductor fabrication. In one or more embodiments, a system for processing a substrate and suitable for semiconductor manufacturing includes a chamber body including one or more sidewalls. The system includes a lid and a window, the one or more sidewalls, the window, and the lid at least partially defining an interior volume. The system includes one or more heat sources configured to heat the interior volume, a substrate support disposed in the interior volume, and a first optical sensor configured to detect energy having a first wavelength less than 4.0 microns. The system includes a second optical sensor configured to detect energy having a second wavelength less than the first wavelength.

Description

Technical Field

[0001] This disclosure relates to systems, apparatus, and methods for monitoring the temperature of boards used in semiconductor manufacturing. Background Technology

[0002] Semiconductor substrates are processed for a wide range of applications, including the fabrication of integrated devices and microdevices. During processing, various parameters can affect the uniformity of the material deposited on the substrate. For example, substrate temperature and / or the temperature of the processing chamber components can affect deposition uniformity.

[0003] It may be difficult to adjust parameters (such as airflow path, airflow rate, and gas pressure) to achieve uniform deposition. If substrate rotation is used, the rotation itself can increase the difficulty of adjustment. Relatively slow rotation speeds, high pressures, and low flow rates can also increase the difficulty of adjustment. Furthermore, it is difficult to clean the components of the processing chamber.

[0004] Work attempting to overcome these difficulties may involve challenges in monitoring the temperature of the substrate and / or chamber components. The work may also involve challenges in monitoring the coating of the chamber components.

[0005] Therefore, it is necessary to improve the processing chamber and related components in order to adjust process parameters and monitor temperature and coating condition. Summary of the Invention

[0006] This disclosure relates to systems, apparatus, and methods for monitoring the temperature of boards used in semiconductor manufacturing.

[0007] In one or more embodiments, a system for processing a substrate and suitable for semiconductor manufacturing includes a chamber body having one or more sidewalls. The system includes a cover and a window, the one or more sidewalls, the window, and the cover at least partially defining an internal volume. The system includes one or more heat sources configured to heat the internal volume, a substrate support disposed within the internal volume, and a first optical sensor configured to detect energy having a first wavelength of less than 4.0 micrometers. The system includes a second optical sensor configured to detect energy having a second wavelength less than the first wavelength.

[0008] In one or more embodiments, a system for processing a substrate and suitable for semiconductor manufacturing includes a chamber body comprising one or more sidewalls. The system includes a cover and a window, the one or more sidewalls, the window, and the cover at least partially defining an internal volume, and the window comprising a first quartz. The system includes one or more heat sources configured to heat the internal volume, a substrate support disposed within the internal volume, and a plate disposed within the internal volume between the substrate support and the window. The plate comprises a second quartz, and the second quartz has a second hydroxyl concentration greater than 750 ppm.

[0009] In one or more embodiments, a system for processing a substrate and suitable for semiconductor manufacturing includes a chamber body comprising one or more sidewalls. The system includes a cover and a window, the one or more sidewalls, the window, and the cover at least partially defining an internal volume. The system includes one or more heat sources configured to heat the internal volume, a substrate support disposed within the internal volume, and a plate disposed within the internal volume between the substrate support and the window. The system includes a controller including instructions that, when executed, enable a plurality of operations, including: heating a substrate at least partially supported by the substrate support, and flowing one or more process gases over the substrate to form one or more layers on the substrate. The plurality of instructions include: monitoring a first temperature of the substrate or substrate support using a first optical sensor, and monitoring a second temperature of the plate using a second optical sensor. Attached Figure Description

[0010] To gain a more detailed understanding of the features described above, reference can be made to embodiments that are briefly outlined above, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings are merely illustrative and should not be construed as limiting the scope of this disclosure, but rather encompass other equivalent embodiments.

[0011] Figure 1 This is a schematic diagram of a lateral cross-section of a processing chamber according to one or more embodiments.

[0012] Figure 2 It is based on one or more implementation methods. Figure 1 An enlarged schematic diagram of the processing chamber is shown.

[0013] Figure 3 The illustrations are based on one or more embodiments. Figure 1 A simplified partial cross-sectional schematic diagram of a portion of the processing chamber is shown.

[0014] Figure 4 It is a graphical schematic diagram of a temperature measurement curve according to one or more embodiments.

[0015] Figure 5 It includes one or more embodiments. Figure 1 A partial schematic diagram of the system for processing chambers is shown.

[0016] Figure 6 It is based on one or more implementation methods. Figure 5 The diagram shows an enlarged cross-sectional view of the sensor element.

[0017] Figure 7A It is based on one or more implementation methods. Figure 5A planar schematic diagram of the optical paths in the sensor elements of the corresponding reflective portions of the first and second beams. In one or more embodiments, the sensor element includes an energy-harvesting lens 701 (such as a collimating lens).

[0018] Figure 7B It is based on one or more implementation methods. Figure 5 A planar schematic diagram of the optical paths in the sensor elements of the corresponding reflective portions of the first, second, and third beams shown.

[0019] Figure 8 It is based on one or more implementation methods. Figure 6 And a side view of the beam splitter shown in Figure 7.

[0020] Figure 9A It is a graphical schematic diagram of the transmission curve according to one or more embodiments.

[0021] Figure 9B It is a graphical schematic diagram of the transmission curve according to one or more embodiments.

[0022] Figure 10 It is a schematic block diagram of a substrate processing method according to one or more embodiments.

[0023] Figure 11 It is a schematic block diagram of a chamber cleaning method according to one or more embodiments.

[0024] For ease of understanding, the same reference numerals are used where possible to indicate common elements in the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated into other embodiments without further description. Detailed Implementation

[0025] This disclosure relates to systems, apparatus, and methods for monitoring the temperature of boards used in semiconductor manufacturing.

[0026] In this disclosure, terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, welding, melting, fusion, interference fit, and / or fastening such as by bolts, threaded connections, pins, and / or screws. In this disclosure, terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, integral formation. In this disclosure, terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, direct coupling and / or indirect coupling, such as indirect coupling through components such as links, blocks, and / or frames.

[0027] Figure 1 This is a schematic side cross-sectional view of a processing chamber 100 according to one or more embodiments. The processing chamber 100 is a deposition chamber. In one or more embodiments, the processing chamber 100 is an epitaxial deposition chamber. An epitaxial film is grown on a substrate 102 using the processing chamber 100. A precursor crossflow is formed on the top surface 150 of the substrate 102 in the processing chamber 100. Figure 1 The processing status of the processing chamber 100 is shown.

[0028] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form the chamber body. A substrate support 106, an upper window 108 (such as an upper dome), a lower window 110 (such as a lower dome), a plurality of upper heat sources 141, and a plurality of lower heat sources 143 are disposed within the chamber body. In one or more embodiments, the upper heat source 141 includes an upper lamp, and the lower heat source 143 includes a lower lamp. This disclosure contemplates that the various heat sources described herein may use other heat sources (supplementary or alternative lamps). For example, the various heat sources described herein may use resistive heaters, light-emitting diodes (LEDs), and / or lasers.

[0029] A substrate support 106 is disposed between the upper window 108 and the lower window 110. The substrate support 106 supports the substrate 102. In one or more embodiments, the substrate support 106 includes a base. Other substrate supports are contemplated in this disclosure (e.g., substrate carriers and / or one or more ring portions that can support one or more external regions of the substrate 102). A plurality of upper heat sources 141 are disposed between the upper window and the cover 154. The plurality of upper heat sources 141 form part of an upper heat source module 155. The cover 154 includes a plurality of sensor elements 196, 197, 198 disposed therein or on it and configured to measure the temperature within the processing chamber 100. A lower sensor element 195 is configured to sense the temperature within the processing chamber 100. In one or more instances, each sensor element 195, 196, 197, 198 is a pyrometer. In one or more instances, each sensor element 195, 196, 197, 198 is an optical sensor element, such as an optical pyrometer. This disclosure envisions the use of sensors other than pyrometers. Each sensor element 195, 196, 197, 198 is a single-wavelength sensor element or a multi-wavelength (such as dual-wavelength) sensor element. The lower sensor element 195 is mounted adjacent to the base plate 152.

[0030] In one or more embodiments, the process chamber 100 includes any one, two, or three of the four sensor elements 195, 196, 197, and 198 shown.

[0031] In one or more embodiments, the process chamber 100 includes one or more additional sensor elements besides sensor elements 195, 196, 197, and 198. In one or more embodiments, the process chamber 100 may include sensor elements disposed at different positions and / or with different orientations compared to the illustrated sensor elements 195, 196, 197, and 198.

[0032] Multiple lower heat sources 143 are disposed between the lower window 110 and the base plate 152. The multiple lower heat sources 143 form part of the lower heat source module 145. The upper window 108 is an upper dome and / or is formed of an energy-transmitting material such as quartz. The lower window 110 is a lower dome and / or is formed of an energy-transmitting material such as quartz.

[0033] The upper volume 136 and the purification volume 138 are formed between the upper window 108 and the lower window 110. The upper volume 136 and the purification volume 138 are at least part of the internal volume defined by the upper window 108, the lower window 110 and one or more pads 111, 163.

[0034] A substrate support 106 is disposed within the internal volume. The substrate support 106 includes a top surface on which the substrate 102 is disposed. The substrate support 106 is attached to a shaft 118. In one or more embodiments, the substrate support 106 is connected to the shaft 118 via one or more arms 119 connected to the shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment elements that provide movement and / or adjustment to the shaft 118 and / or the substrate support 106 in the upper volume 136.

[0035] The substrate support 106 may include lifting rod holes 107 disposed therein. Each lifting rod hole 107 is sized to accommodate a lifting rod 132, thereby lifting the substrate 102 from the substrate support 106 before or after performing a deposition process. When the substrate support 106 descends from the process position to the transfer position, the lifting rod 132 is reliably positioned on a lifting rod baffle 134. The lifting rod baffle 134 may include a plurality of arms 139 attached to a shaft 135.

[0036] The flow module 112 includes one or more gas inlets 114 (e.g., multiple gas inlets), one or more purge gas inlets 164 (e.g., multiple purge gas inlets), and one or more exhaust outlets 116. The one or more process gas inlets 114 and the one or more purge gas inlets 164 are disposed on the side of the flow module 112 opposite to the one or more exhaust outlets 116. A preheating ring 117 is disposed below the one or more gas inlets 114 and the one or more exhaust outlets 116. The preheating ring 117 is disposed above the one or more purge gas inlets 164. One or more gaskets 111, 163 are disposed on the inner surface of the flow module 112 and protect the flow module 112 from the reactive gases used during deposition and / or cleaning operations. The gas inlets 114 and the purge gas inlets 164 are each positioned such that the corresponding one or more process gases P1 and one or more purge gases P2 flow parallel to the top surface 150 of the substrate 102 disposed in the upper volume 136. Gas inlet 114 is fluidly connected to one or more process gas sources 151 and one or more clean gas sources 153. Purified gas inlet 164 is fluidly connected to one or more purified gas sources 162. One or more exhaust outlets 116 are fluidly connected to exhaust pump 157. One or more process gases P1 supplied using one or more process gas sources 151 may include one or more reactive gases (such as one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (such as one or more of nitrogen (N2) and / or hydrogen (H2)). One or more purified gases P2 supplied using one or more purified gas sources 162 may include one or more inert gases (such as one or more of argon (Ar), helium (He), and / or nitrogen (N2)). One or more clean gases supplied using one or more clean gas sources 153 may include one or more of hydrogen (H) and / or chlorine (Cl). In one or more embodiments, one or more process gases P1 include silicon phosphide (SiP) and / or phosphine (PH3), and one or more cleaning gases include hydrochloric acid (HCl).

[0037] One or more exhaust outlets 116 are further connected to or include an exhaust system 178. The exhaust system 178 is fluidly connected to one or more exhaust outlets 116 and an exhaust pump 157. The exhaust system 178 may facilitate controlled deposition of layers on the substrate 102. The exhaust system 178 is located on the opposite side of the processing chamber 100 relative to the flow module 112.

[0038] The system includes a plate 171 having a first surface 172 and a second surface 173 opposite to the first surface 172. In one or more embodiments, plate 171 is part of a flow guiding structure. The second surface 173 faces a substrate support 106. The processing chamber 100 includes one or more gaskets 111, 163. The upper gasket 163 includes an annular portion 181 and one or more protrusions 182 extending inward relative to the annular portion 181. The one or more protrusions 182 are configured to support one or more outer regions of the second surface 173 of plate 171. The upper gasket 163 includes one or more inlet openings 183 and one or more outlet openings 185. In one or more embodiments, plate 171 is disc-shaped, and the annular portion 181 is annular. Plate 171 may be rectangular. Plate 171 divides the upper volume 136 between the substrate support 106 and the upper window 108 into a lower portion 136a and an upper portion 136b. The lower portion 136a is a processing portion. In one or more embodiments, plate 171 is a partition plate that fluidly isolates the upper portion 136b from the lower portion 136a.

[0039] Flow module 112 (which may be at least a portion of the sidewall of processing chamber 100) includes one or more gas inlets 114 in fluid communication with lower portion 136a. Flow module 112 includes one or more second gas inlets 175 in fluid communication with upper portion 136b. The one or more gas inlets 114 are in fluid communication with one or more flow gaps between upper liner 163 and lower liner 111. The one or more second gas inlets 175 are in fluid communication with one or more inlet openings 183 of upper liner 163.

[0040] During deposition operations (e.g., epitaxial growth operations), one or more process gases P1 flow through one or more gas inlets 114, through one or more gaps, and into the lower portion 136a to flow above the substrate 102. During deposition operations, one or more purge gases P2 flow through one or more second gas inlets 175, through one or more inlet openings 183 of the lower liner 111, and into the upper portion 136b. The one or more purge gases P2 flow simultaneously with the one or more process gases P1. The flow of the one or more purge gases P2 through the upper portion 136b helps to reduce or prevent the one or more process gases P1 from flowing into the upper portion 136b and contaminating it. The one or more process gases P1 are discharged through the gap between the upper liner 163 and the lower liner 111 and through one or more exhaust outlets 116. One or more purified gases P2 are discharged through one or more outlet openings 185, through the same gap between the upper liner 163 and the lower liner 111, and through one or more exhaust outlets 116 identical to those of one or more process gases P1. This disclosure envisions that one or more purified gases P2 may be discharged individually through one or more second exhaust outlets separate from the one or more exhaust outlets 116.

[0041] This disclosure also envisions that one or more purge gases P2 can be supplied to the purge volume 138 (through one or more purge gas inlets 164) and discharged from the purge volume 138 during the deposition operation.

[0042] During the cleaning operation, one or more cleaning gases flow through one or more gas inlets 114, through one or more gaps (between the upper liner 163 and the lower liner 111), and into the lower portion 136a. During the cleaning operation, one or more cleaning gases also simultaneously flow through one or more second gas inlets 175, through one or more inlet openings 183 of the upper liner 163, and into the upper portion 136b. This disclosure envisions that the one or more cleaning gases used for cleaning surfaces adjacent to the upper portion 136b may be the same as or different from the one or more cleaning gases used for cleaning surfaces adjacent to the lower portion 136a.

[0043] The processing chamber 100 facilitates the separation of the gas supplied to the lower portion 136a from the gas supplied to the upper portion 136b, thereby aiding in parameter adjustment. Additionally, one or more purifying gases and one or more cleaning gases can be supplied separately to the upper portion 136b to reduce contamination of the upper window 108 and / or panel 171.

[0044] As shown in the figure, the controller 190 is connected to the processing chamber 100 and is used to control the operation of processes and methods, such as those described herein.

[0045] The controller 190 is configured to receive data or inputs as sensor readings from multiple sensors. For example, the sensors may include: sensors monitoring layer growth on substrate 102; sensors monitoring growth or residue on the inner surfaces of chamber components of the processing chamber 100 (such as the inner surfaces of plate 171 and / or one or more pads 111, 163); and / or sensors monitoring the temperature of substrate 102, substrate support 106, plate 171 and / or pads 111, 163. The controller 190 is equipped with, or communicates with, a system model of the processing chamber 100. The system model includes a heating model, a coating model, a rotational position model, and / or an airflow model. The system model is a program configured to estimate parameters within the processing chamber 100 (e.g., airflow velocity, gas pressure, processing temperature, component rotational position, heating profile, coating condition, and / or cleaning condition) during deposition and / or cleaning operations. The controller 190 is further configured to store readings and calculation results. The readings and calculation results include previous sensor readings, such as any previous sensor readings within the processing chamber 100. The readings and calculation results further include calculated values ​​stored after the sensor readings are read by the controller 190 and run in the system model. Therefore, the controller 190 is configured to retrieve and save the stored readings and calculation results for later use. Maintaining previous readings and calculation results allows the controller 190 to adjust the system model over time to more accurately reflect the processing chamber 100.

[0046] The controller 190 can monitor and estimate optimization parameters, detect the coating status of the plate 171, generate alarms on the display, stop the deposition operation, start a chamber downtime cycle, postpone subsequent iterations of the deposition operation, start a cleaning operation, detect the cleaning status of the plate 171, stop the cleaning operation, adjust the heating power, and / or otherwise adjust the process formulation.

[0047] Controller 190 includes a central processing unit (CPU) 193 (e.g., a processor), memory 191 containing instructions, and support circuitry 192 for CPU 193. Controller 190 directly controls individual items or is controlled via other computers and / or controllers. In one or more embodiments, controller 190 is communicatively coupled to a dedicated controller, and controller 190 functions as a central controller.

[0048] Controller 190 is a general-purpose computer processor used in industrial environments to control various substrate processing chambers and devices, and subprocessors thereon or therein. Memory 191 or non-transitory computer-readable media is one or more of the following readily available memory types: random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM) and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4 and the like)), read-only memory (ROM), floppy disk, hard disk, flash drive, or any other form of local or remote digital storage device. Support circuitry 192 of controller 190 may be coupled to CPU 193 to support CPU 193. Support circuitry 192 includes cache, power supply, frequency circuitry, input / output circuitry systems and subsystems, and the like. Operating parameters (e.g., coating condition, pressure of process gas P1, processing temperature, heating profile, flow rate of process gas P1, pressure of cleaning gas, flow rate of cleaning gas, and / or rotational speed of substrate support 106) and operations are stored in memory 191 as executed or invoked software routines to turn controller 190 into a dedicated controller for controlling the operation of the various chambers / modules described herein. Controller 190 is configured to perform any of the operations described herein. When executed, instructions stored in memory cause one or more of the operations of method 1000 and / or method 1100 (described below) associated with processing chamber 100 to be performed. Controller 190 and processing chamber 100 are at least part of a system for processing a substrate.

[0049] The various operations described herein (such as the operations of method 1000 and / or method 1100) can be performed automatically by controller 190, or can be performed automatically or manually by certain operations performed by the user.

[0050] In one or more embodiments, the controller 190 includes a large-capacity storage element, an input control unit, and a display unit. The controller 190 monitors the temperature of the substrate 102, the temperature of the substrate support 106, the temperature of the plate 171, the process gas flow rate, and / or the purge gas flow rate. In one or more embodiments, the controller 190 includes multiple controllers 190 such that the stored readings, calculation results, and system model are stored in a separate controller that controls the operation of the processing chamber 100. In one or more embodiments, the system model and all stored readings and calculation results are stored in the controller 190.

[0051] The controller 190 is configured to control sensor elements 195, 196, 197, 198, deposition, cleaning, rotational position, heating, and gas flow through the processing chamber 100 by providing outputs to control devices for heat sources, airflow, and motion components 121. The control devices include controls for sensor elements 195, 196, 197, 198, upper heat source 141, lower heat source 143, process gas source 151, purified gas source 162, motion components 121, and exhaust pump 157.

[0052] Controller 190 is configured to adjust the output of the control device based on sensor readings, a system model, and stored readings and calculation results. Controller 190 includes embedded software and compensation algorithms for calibrating measurement results. Controller 190 may include one or more machine learning and / or artificial intelligence algorithms that estimate optimization parameters for deposition and / or cleaning operations (such as for adjusting deposition operations (e.g., process formulation), stopping deposition operations, initiating chamber downtime cycles, delaying subsequent iterations of deposition operations, initiating cleaning operations, stopping cleaning operations, adjusting heating power, and / or regulating cleaning operations). For example, optimization parameters may include initiating a cleaning operation to remove a predetermined coating thickness from plate 171.

[0053] One or more machine learning algorithms and / or artificial intelligence algorithms may implement, adjust, and / or improve the one or more algorithms, inputs, outputs, or variables described above. Supplementally or alternatively, one or more machine learning algorithms and / or artificial intelligence algorithms may prioritize or rank certain aspects of the adjustment of process chamber 100, method 1000, and / or method 1100 relative to other aspects of process chamber 100, method 1000, and / or method 1100. One or more machine learning algorithms and / or artificial intelligence algorithms may take into account other changes within the processing system, such as hardware replacement and / or aging. In one or more embodiments, one or more machine learning algorithms and / or artificial intelligence algorithms take into account upstream or downstream changes occurring within the processing system due to changes in variables of process chamber 100, method 1000, and / or method 1100. For example, if variable "A" is adjusted to cause a change in aspect "B" of the process, and this adjustment causes an unexpected change in aspect "C" of the process, then one or more machine learning algorithms and / or artificial intelligence algorithms may take into account this change in aspect "C". In this embodiment, one or more machine learning algorithms and / or artificial intelligence algorithms unexpectedly relate to predictive aspects of implementing process chamber 100, method 1000, and / or method 1100. These predictive aspects can be used to proactively mitigate unexpected changes within the processing system.

[0054] For example, one or more machine learning and / or artificial intelligence algorithms may use regression models (such as linear regression models) or clustering techniques to estimate optimization parameters. The algorithms may be unsupervised or supervised. One or more machine learning and / or artificial intelligence algorithms may optimize, for example, the heating power applied to heat sources 141, 143, the cleaning formula, and / or the treatment formula. For example, one or more machine learning and / or artificial intelligence algorithms may optimize the predetermined thickness and / or the second predetermined thickness discussed herein, the time for initiating the cleaning operation, and / or the time for initiating the deposition operation.

[0055] In one or more embodiments, controller 190 automatically performs the operations described herein without using one or more machine learning algorithms and / or artificial intelligence algorithms. In one or more embodiments, controller 190 compares measurement results (such as measurements of increased and / or decreased readings) with data in a lookup table or library to determine whether a coating condition and / or cleaning condition has been detected. Controller 190 may store the measurement results as data in a lookup table or library.

[0056] Figure 2 It is based on one or more implementation methods. Figure 1 An enlarged schematic diagram of the processing chamber 100 shown. The substrate support 106 has an upper surface 161 (e.g., a support surface) and a lower surface 169.

[0057] Figure 2 Multiple temperature measurement points 249-Q, 249-S, 253-Q, 253-R, 253-S, 255-Q, 255-S, 256-Q, 256-R, and 256-S are also shown. For example, in one or more embodiments, the lower sensor element 195 ( Figure 1 (As shown) is configured to measure temperature at sites 249-Q (e.g., the central peripheral region of the lower window 110) and / or sites 249-S (e.g., the central peripheral region of the lower surface 169 of the substrate support 106). In one or more embodiments, the first upper sensor element 196 ( Figure 1 (As shown) is configured to measure temperature at sites 255-Q (e.g., the central region of plate 171) and / or sites 255-S (e.g., the central region of substrate 102 and / or the central region of the upper surface 161 of substrate support 106). In one or more embodiments, the second upper sensor element 197 ( Figure 1As shown, it is configured to measure temperature at sites 253-Q (e.g., the outer peripheral region of the upper window 108), 253-R (e.g., the outer peripheral region of the plate 171), and / or 255-S (e.g., the outer peripheral region of the substrate 102 and / or the outer peripheral region of the upper surface 161 of the substrate support 106). In one or more embodiments, the third upper sensor element 198 ( Figure 1 (As shown) are configured to measure temperature at sites 256-Q (e.g., the outer peripheral region of the upper window 108), 256-R (e.g., the outer peripheral region of the plate 171), and / or 256-S (e.g., the outer peripheral region of the substrate 102 and / or the outer peripheral region of the upper surface 161 of the substrate support 106). Sensor elements 195, 196, 197, and 198 can be positioned and / or oriented in different ways to... Figure 1 and Figure 2 The sensor elements 195, 196, 197, and 198 are shown at different locations, but can still measure temperature at points on plate 171, at points on one or more windows (e.g., upper window 108 and / or lower window 110), and / or on the surface of substrate support 106 (e.g., upper surface 161 and / or lower surface 169) and / or on one of substrate 102. Each of these sensor elements is adapted to detect energy (e.g., radiation, such as light) in two or more (e.g., three or more) different wavelength ranges. For example, in one or more embodiments, two or three wavelength ranges of the upper sensor elements 196, 197, 198 are selected as follows: (1) the plate 171 is an absorptive wavelength range (e.g., about 2.48 micrometers to about 2.98 micrometers), (2) the substrate support 106 and / or the substrate 102 is an absorptive wavelength range (e.g., about 3.17 micrometers to about 3.67 micrometers), and (3) the upper window 108 and / or the lower window 110 is an absorptive wavelength range (e.g., about 4.75 micrometers to about 5.25 micrometers, such as about 5.0 micrometers). In another example, in one or more embodiments, the two wavelength ranges of the lower sensor element 195 are selected as follows: (1) the upper window 108 and / or the lower window 110 are absorptive wavelength ranges (e.g., about 4.75 micrometers to about 5.25 micrometers, such as about 5.0 micrometers) and (2) the substrate support 106 and / or the substrate 102 are absorptive wavelength ranges (e.g., about 3.17 micrometers to about 3.67 micrometers).

[0058] Figure 3 The illustrations are based on one or more embodiments. Figure 1A simplified partial cross-sectional schematic diagram of a portion of the processing chamber 100 is shown. As illustrated, temperature measurement at each of sites 249-Q, 249-S, 253-Q, 253-R, 253-S, 255-Q, 255-S, 256-Q, 256-R, and 256-S can be performed using one or more radiation beams. In one or more embodiments, each of sensor elements 195, 196, 197, and 198 is configured to emit one or more radiation beams and receive one or more reflected radiation beams. Figure 3 In this configuration, a radiation beam 302 can be emitted by a first upper sensor element 196. On a first surface 172 of the plate 171, a portion of the radiation beam 302 can be reflected as a radiation beam 306. Another portion of the radiation beam 302 can be transmitted as a radiation beam 304. It should be understood that the reflected and transmitted portions can have different wavelengths, depending on the material and temperature of the plate 171. For example, the reflected radiation beam 306 can have a wavelength in the range of approximately 2.48 micrometers to approximately 2.98 micrometers. The first upper sensor element 196 is configured to receive the reflected radiation beam 306 and measure the intensity of the radiation beam 306. For example, the first upper sensor element 196 is configured to at least receive and measure radiation in the wavelength range of approximately 2.48 micrometers to approximately 2.98 micrometers. On the upper surface 161 of the substrate support 106, a portion of the radiation beam 304 can be reflected as a radiation beam 308. Furthermore, a portion of the radiation beam 308 can again be transmitted through the upper window 108 to obtain a radiation beam 309. It should be understood that the reflecting portion (e.g., radiation beam 308) and the reflective-radiating portion (e.g., radiation beam 309) may each have a certain wavelength, depending on the material and temperature of the substrate support 106 and the plate 171. For example, the radiation beam 309 may have a wavelength in the range of about 3.17 micrometers to about 3.67 micrometers. The first upper sensor element 196 is configured to receive the transmitted-reflected-transmitted radiation beam 309 and measure the intensity of the radiation beam 309. For example, the first upper sensor element 196 is configured to at least receive and measure radiation in the wavelength range of about 3.17 micrometers to about 3.67 micrometers.

[0059] In one or more embodiments, one or more of the sensor elements 195, 196, 197, and 198 can simultaneously measure more than two (such as three or more) different wavelengths (or wavelength ranges). For example, one or more of the sensor elements 195, 196, 197, and 198 can simultaneously measure radiation in the range of about 3.17 micrometers to about 3.67 micrometers, about 2.48 micrometers to about 2.98 micrometers, and about 4.75 micrometers to about 5.25 micrometers.

[0060] The temperature measurements taken by each of sensor elements 195, 196, 197, and 198 can be used to monitor the temperature within process chamber 100. Furthermore, the temperature measurements can be used to assess the operational status of process chamber 100 (such as coating condition and / or cleanliness). For example, differences in temperature measurements can be used to detect reactant coating on plate 171, upper window 108, and / or lower window 110. This coating detection can be obtained without opening process chamber 100 for process and / or cleaning optimization. For example, Figure 4 The illustration may show illustrative temperature changes that can be measured to detect coating conditions.

[0061] Figure 4 It is a graphical representation of temperature measurement curves 451-456 according to one or more embodiments.

[0062] Line 451 is an exemplary temperature measurement curve of the substrate support 106 when the plate 171 is cleaned (e.g., before being coated with reactive gas). Line 452 is an exemplary temperature measurement curve of the substrate support 106 when the plate 171 is coated with reactive gas. Line 453 is an exemplary temperature measurement curve of the substrate support 106 after the plate 171 is coated. A first change 454 in the temperature reading (e.g., a decrease in reading) indicates that the plate 171 is being coated with reactive gas. A second change 455 in the temperature reading (e.g., a decrease in reading) indicates that the plate 171 has been coated with reactive gas, such as to a predetermined thickness.

[0063] Line 461 is an exemplary temperature measurement curve of board 171 during cleaning (e.g., before coating with reactive gases and having a pyrometer signal showing high energy transmitted to the substrate). Line 462 is an exemplary temperature measurement curve of board 171 when coated with reactive gases. Line 463 is an exemplary temperature measurement curve of board 171 after coating (e.g., having a pyrometer signal showing lower energy transmitted to the substrate). A first change 464 in the temperature reading (e.g., a decrease in reading) indicates that board 171 is being coated with reactive gases. A second change 465 in the temperature reading (e.g., an increase in reading) indicates that board 171 has been coated with reactive gases, such as with a predetermined thickness.

[0064] In one or more embodiments, controller 190 may receive temperature measurement results from any of sensor elements 195, 196, 197, and 198. Controller 190 may store one or more of the temperature measurement results and may compare the stored values ​​with one or more subsequent iterations of the temperature measurement results. Controller 190 may compare any of the temperature measurement results with any one or more other temperature measurement results. Controller 190 may evaluate the operating status of process chamber 100 based on the temperature measurement results and / or their comparisons. For example, the operating status may be the coating condition of plate 171 (e.g., plate 171 has been coated with a predetermined thickness). For example, the coating condition may impair heating efficiency, process gas flow rate, and / or process gas reactivity. Once a coating condition is detected, controller 190 may generate an alarm on the display, stop the deposition operation, begin a chamber downtime cycle, postpone subsequent iterations of the deposition operation, begin a cleaning operation to remove the coating from plate 171, and / or stop the cleaning operation.

[0065] The controller 190 can induce changes in the environment of the process chamber based on an assessment of the operating status (e.g., detection of coating conditions). For example, the controller can adjust the input power of heat sources 141, 143 to regulate the heating of substrate support 106 and / or substrate 102. The controller 190 can issue an alarm based on the assessment of the operating status and generate an alarm on the display so that the user can be notified. For example, the controller 190 can notify the user that board 171 requires a cleaning operation. As discussed above, the controller 190 can supplementally or alternatively automatically initiate a cleaning operation to remove the coating from board 171.

[0066] In one or more embodiments, the controller 190 detects a coating condition when (1) a first reading change (such as first change 454 or second change 455) of the substrate support 106 (and / or substrate 102) is detected; and (2) a second reading change of the plate 171 substantially simultaneously with the first reading change (e.g., second change 465) is detected. In one or more embodiments, the controller 190 detects a coating condition when (1) a decrease in the reading of the substrate support 106 (and / or substrate 102) is detected (e.g., first change 454 or second change 455); and (2) an increase in the reading of the plate 171 substantially simultaneously with the decrease in the reading (e.g., second change 465). For example, Figure 4A second change 465 (e.g., an increase in the reading of plate 171) is displayed substantially simultaneously with the first change 454 (e.g., a decrease in the reading of substrate support 106 and / or substrate 102). During the coating of plate 171, the coating causes plate 171 to absorb more energy, resulting in an increase in the temperature of plate 171 and a decrease in the temperature of substrate support 106 and / or substrate 102. In one or more embodiments, if the time of decrease in the online reading and the time of increase in the reading differ from each other by 5 seconds or less (e.g., 1 second or less, e.g., 0.5 seconds or less), they can be substantially simultaneous. For example, detecting the coating condition by using the decrease in reading and the increase in reading facilitates accurate detection of the coating condition and effective action (e.g., initiating a cleaning operation). This disclosure contemplates that one or more curves (e.g., lines 451, 452, 453, 461, and / or 463) can be used as reference curves for detecting the coating condition. This disclosure contemplates that the coating condition can be detected in a steady state and / or in a transient state.

[0067] In one or more embodiments, the controller 190 detects a cleaning condition when (1) an increase in the reading of the substrate support 106 (and / or substrate 102) is detected; and (2) a decrease in the reading of the plate 171 is detected substantially simultaneously with the increase in the reading. The cleaning condition is detected during the cleaning operation, and, for example, the cleaning condition may indicate that an appropriate amount of coating has been removed, allowing the cleaning operation to be terminated and the deposition operation to continue. This disclosure contemplates that one or more curves (such as lines 451, 452, 453, 461, and / or 463) may be used as reference curves for detecting the cleaning condition. This disclosure contemplates that the cleaning condition may be detected in a steady state and / or in a transient state.

[0068] In one or more embodiments, an increase or decrease in the corresponding reading is detected if the change in the ratio of the increase or decrease in the corresponding reading to the initial temperature reading is within a range of 0.00015 to 0.1 (such as a range of 0.005 to 0.1). In one or more embodiments, if the ratio is outside the range of about 0.00015 to 0.1 (such as outside the range of 0.005 to 0.1), no coating condition or cleaning condition is detected.

[0069] Figure 5 It includes one or more embodiments. Figure 1 This is a partial schematic diagram of the system of the processing chamber 100. The sensor element 500 is mounted above the plate 171 and the upper window 108. The sensor element 500 can be replaced with... Figure 1 One or more of the sensor elements 195, 196, 197, and 198 shown are used.

[0070] Sensor element 500 includes an eyepiece 501 mounted to sensor housing 502. Sensor element 500 includes a first optical sensor 505 configured to detect energy having a first wavelength of less than 4.0 micrometers and a second optical sensor 506 configured to detect energy having a second wavelength of less than the first wavelength. Optical sensors 505 and 506 are disposed within sensor housing 502. In one or more embodiments, the first wavelength is in the range of about 3.17 micrometers to about 3.67 micrometers, such as about 3.3 micrometers to about 3.5 micrometers. In one or more embodiments, the first wavelength is about 3.4 micrometers, such as 3.42 micrometers. In one or more embodiments, the second wavelength is in the range of about 2.48 micrometers to about 2.98 micrometers, such as about 2.6 micrometers to about 2.8 micrometers. In one or more embodiments, the second wavelength is about 2.7 micrometers, such as 2.73 micrometers.

[0071] Sensor element 500 includes a first light emitter 507 configured to emit a first beam 511 (e.g., a light beam) toward a first region of substrate support 106 (and / or substrate 102). Sensor element 500 includes a second light emitter 508 configured to emit a second beam 512 (e.g., a light beam) toward a second region of plate 171. The second region of the second beam 512 overlaps at least 80% of the first region of the first beam 511. For example, the second region overlaps the first region vertically from substrate support 106 toward plate 171. Eyepiece 501 is configured to collect reflected portions of beams 511, 512, and optical sensors 505, 506 are configured to measure the intensity of reflected portions of beams 511, 512 having corresponding first and second wavelengths.

[0072] The upper window 108 comprises a first quartz, and the plate 171 comprises a second quartz. The first quartz has a first hydroxyl concentration of less than 100 parts-per-million (ppm). In one or more embodiments, the first hydroxyl concentration is 30 ppm or less, such as the range from about 5 ppm to about 30 ppm. The second quartz has a second hydroxyl concentration of greater than 750 parts-per-million (ppm). In one or more embodiments, the second hydroxyl concentration is 900 ppm or less. In one or more embodiments, the upper window 108 is formed of the first quartz, and the plate 171 is formed of the second quartz. Other windows, such as the lower window 110, may comprise the first quartz. For example, the lower window 110 may be formed of the first quartz. Using both the first and second quartz facilitates accurate and efficient measurement of the temperature of the plate 171 and the substrate support 106 (and / or the substrate 102) during processing, and facilitates accurate and efficient detection of the coating condition of the plate 171. For example, a higher second hydroxyl concentration in plate 171 facilitates accurate and efficient measurement of the temperature and / or coating condition of plate 171 using a second wavelength. Using both the first and second quartz slabs improves the signal-to-noise ratio of the measurement results. Using the first quartz slab reduces or eliminates thermal inhomogeneities affected by the temperature gradient of the upper window 108. For example, reducing or eliminating the gradient of hydroxyl concentration along the diameter of the first quartz slab improves thermal inhomogeneity. As described herein, hydroxyl concentration refers to a measurement of parts per million (ppm) of hydroxyl groups (e.g., groups comprising oxygen atoms covalently bonded to hydrogen atoms) in or on the corresponding quartz material. In one or more embodiments, the ppm measurement of hydroxyl concentration is a measured concentration of hydroxyl groups relative to all other materials present on the corresponding quartz surface of the first or second quartz slab. In one or more embodiments, the measurement of hydroxyl concentration is performed by X-ray photoelectron spectroscopy (XPS) and provided in ppm. This disclosure envisions the use of other measurement techniques, such as glow discharge mass spectroscopy (GDMS), to measure the ppm value of hydroxyl concentration.

[0073] In one or more embodiments, at least a portion of shaft 118 and / or arm 119 comprises a first quartz (such as being formed of a first quartz). In one or more embodiments, at least a portion of shaft 135, arm 139 and / or lifting rod baffle 134 comprises a first quartz (such as being formed of a first quartz).

[0074] For example, the hydroxyl concentration can be affected by the water content and / or contaminant content in the corresponding first or second quartz. A higher hydroxyl concentration in the second quartz results in lower transmission with energy at the second wavelength. A higher hydroxyl concentration in the second quartz results in higher transmission with energy at the first wavelength.

[0075] In one or more embodiments, the first quartz is transmissive to both the first and second wavelengths discussed herein. In one or more embodiments, the second quartz is transmissive to the first wavelength and absorbent to the second wavelength. In one or more embodiments, the material of the substrate support 106 is absorbent to the first wavelength. The first quartz is advantageous in reducing absorption and increasing transmission (for both the first and second wavelengths), and in reducing power consumption for heating. Compared to other materials, the first quartz has a higher infrared transmittance (e.g., more than 5%) at a temperature of approximately 1000 degrees Celsius. For example, the first quartz can save more than 5 kW of power per 100 kW consumed. The first quartz is advantageous in increasing thermal slope and throughput.

[0076] In one or more embodiments, the first quartz may transmit 75% or more (such as 80% or more) of energy having a second wavelength (e.g., light). In one or more embodiments, the second quartz may transmit less than 5% (such as about 0%) of energy having a second wavelength (e.g., light). The first quartz is fused quartz, such as electrofused quartz. The second quartz is synthetic quartz, such as quartz formed using a fumigation process.

[0077] The sensor element 500 shown is a multi-wavelength (e.g., dual-wavelength) sensor element. This disclosure envisions a first optical sensor 505 housed within a first sensor housing of the first sensor element, a first light emitter 507 mounted to the first sensor housing, a second optical sensor 506 housed within a second sensor housing of the second sensor element, and a second light emitter 508 mounted to the second sensor housing. A first eyepiece can be mounted to the first sensor housing, and a second eyepiece can be mounted to the second sensor housing. The first and second sensor housings are positioned relative to each other such that the first beam 511 and the second beam 512 overlap (as described above) by at least 80%.

[0078] Sensor element 550 is used to supplement or replace sensor element 500, and is positioned above plate 171 and upper window 108. Sensor element 550 can replace... Figure 1One or more of the sensor elements 195, 196, 197, and 198 shown are used. Sensor element 550 includes a third optical sensor 551 configured to detect energy having a third wavelength greater than the first wavelength. The optical sensor 551 is disposed in a sensor housing 502. In one or more embodiments, the third wavelength is in the range of about 4.75 micrometers to about 5.25 micrometers, such as about 4.9 micrometers to about 5.1 micrometers. In one or more embodiments, the third wavelength is about 5.0 micrometers.

[0079] Sensor element 550 includes a third light emitter 552 configured to emit a third beam 553 (e.g., a light beam) to a third region of upper window 108. Sensor element 550 includes a first light emitter 507 and a second light emitter 508. In one or more embodiments, the third region of the third beam 553 overlaps at least 80% of the first region of the first beam 511. For example, the third region overlaps the first region vertically from substrate support 106 to upper window 108. Eyepiece 501 is configured to collect reflected portions of beams 511, 512, 553, and optical sensors 505, 506, 551 are configured to measure the intensity of reflected portions of beams 511, 512, 553 having corresponding first, second, and third wavelengths. The coating condition of upper window 108 can be determined by measuring the third beam 553 using the third wavelength. A lower hydroxyl concentration in the third quartz relates to lower transmission with energy at the third wavelength. In one or more embodiments, the first quartz is absorptive to the third wavelength. In one or more embodiments, the first quartz may transmit less than 5% (such as about 0%) of energy with a third wavelength (e.g., light).

[0080] The sensor element 550 shown is a multi-wavelength (e.g., three-wavelength) sensor element. This disclosure envisions a first optical sensor 505 housed in a first sensor housing of the first sensor element, a first light emitter 507 mounted to the first sensor housing, a second optical sensor 506 housed in a second sensor housing of the second sensor element, a second light emitter 508 mounted to the second sensor housing, a third optical sensor 551 housed in a third sensor housing of the third sensor element, and a third light emitter 552 mounted to the third sensor housing. A first eyepiece, a second eyepiece, and a third eyepiece are mounted to the first and third sensor housings. The first, second, and third sensor housings are positioned relative to each other such that the first beam 511 overlaps with the second beam 512 (as described above) by at least 80%, and the third beam 553 overlaps with the first beam 511 (as described above) by at least 80%.

[0081] Figure 6 It is based on one or more implementation methods. Figure 5 The diagram shows an enlarged cross-sectional view of the sensor element 500.

[0082] Sensor element 500 includes a beam splitter 521 (such as a mirror) configured to transmit energy of a second wavelength (e.g., a reflective portion of the second beam 512) passing through it to a second optical sensor 506 and to reflect energy of a first wavelength (e.g., a reflective portion of the first beam 511). In one or more embodiments, mirror 522 (such as a second beam splitter) is configured to reflect energy of the first wavelength (e.g., a reflective portion of the first beam 511) to a first optical sensor 505. In one or more embodiments, mirror 522 reflects approximately 95% or more of the energy incident on it.

[0083] Figure 7A It is based on one or more implementation methods. Figure 5 A planar schematic diagram of the optical path in the sensor element 500 of the corresponding reflective portions of the first beam 511 and the second beam 512 shown.

[0084] After being collected by eyepiece 501, the reflected portions of the first beam 511 and the second beam 512 travel to beam splitter 521. The reflected portion of the first beam 511, having a first wavelength, is reflected from beam splitter 521 along a path toward the first optical sensor 505. The reflected portion of the first beam 511, having a first wavelength, is transmitted through beam splitter 521 along a path toward the first optical sensor 505.

[0085] Figure 7B It is based on one or more implementation methods. Figure 5 A planar schematic diagram of the optical paths in sensor element 550 for the corresponding reflective portions of the first beam 511, the second beam 512, and the third beam 553. Sensor element 550 includes beam splitter 521, second beam splitter 722, and mirror 723 (such as a beam splitter).

[0086] In one or more embodiments, beam splitter 521 is configured to transmit at least 90% of the reflected portion of the second beam 512 and reflect at least 90% of the reflected portions of the first beam 511 and the third beam 553. In one or more embodiments, second beam splitter 722 is configured to transmit at least 95% of the reflected portion of the third beam 553 and reflect at least 95% of the reflected portion of the first beam 511. In one or more embodiments, mirror 723 is configured to reflect at least 95% of the reflected portion of the third beam 553.

[0087] Figure 8 It is based on one or more implementation methods. Figure 6 And a side view of the beam splitter 521 shown in Figure 7.

[0088] The beam splitter 521 is oriented such that the surface 523 facing the incoming reflected energy forms an angle A1 with respect to the longitudinal axis of the eyepiece 501. In one or more embodiments, the angle A1 is in the range of about 40 degrees to about 50 degrees. In one or more embodiments, the angle A1 is about 45 degrees.

[0089] Figure 9A This is a graphical schematic diagram of transmission curves 951 to 953 according to one or more embodiments. Transmission curves 951 to 953 are shown across multiple wavelengths. Line 951 is an exemplary transmission curve for the upper window 108. Line 953 is an exemplary transmission curve for the plate 171. As shown by the first wavelength W1 (e.g., a range as discussed above), energy having the first wavelength W1 can be transmitted through the upper window 108 and the plate 171 to reach the substrate 102 and / or the substrate support 106. At the first wavelength W1, both the upper window 108 and the plate 171 have relatively high transmittance (e.g., 80% or higher).

[0090] As indicated by the second wavelength W2 (e.g., a range as discussed above), energy having the second wavelength W2 can be transmitted through the upper window 108 and absorbed and / or reflected by the plate 171. At the second wavelength W2, the upper window 108 has a relatively high transmittance (e.g., 80% or higher), and the plate 171 has a relatively low transmittance (e.g., less than 80%, such as less than 50%, less than 20%, or less than 10%, such as 5% or lower, such as about 0%).

[0091] Figure 9B This is a graphical schematic diagram of transmission curves 971 to 973 according to one or more embodiments. Transmission curves 971 to 973 are shown across multiple wavelengths. Line 971 is an exemplary transmission curve of the first quartz described above. Line 972 is an exemplary transmission curve of the second quartz described above. Line 973 is an exemplary transmission curve of the third quartz. As shown at a wavelength of about 2.73 micrometers (e.g., within the second wavelength range described above), line 971 has a transmittance of 75% or higher (such as 80% or higher). Line 972 has a transmittance of less than 5% (such as about 0%). Line 973 has a transmittance in the range of 55% to 70%. Line 971 is fused quartz formed using electrofusion. Line 972 is synthetic quartz formed using a fumigation process. Line 973 is fused quartz formed using flame melting.

[0092] As shown at a wavelength of approximately 2.73 micrometers, the first line 971 (e.g., the first line of the upper window 108) has relatively high transmittance, and the second line 973 (e.g., the second line of the plate 171) has relatively low transmittance.

[0093] Figure 10This is a schematic block diagram of a substrate processing method 1000 according to one or more embodiments.

[0094] Operation 1001 of method 1000 includes heating a substrate at least partially supported by a substrate support. In one or more embodiments, the substrate is positioned on the substrate support. In one or more embodiments, the substrate is positioned on a substrate carrier positioned on the substrate support.

[0095] Operation 1003 includes: flowing one or more process gases over a substrate to form one or more layers on the substrate. Flowing one or more process gases over the substrate includes guiding one or more process gases through a gap between the substrate and a volume boundary. In one or more embodiments, the volume boundary is a top plate. For example, the top plate may be defined by a second surface 173 of plate 171.

[0096] Operation 1005 includes: monitoring a first temperature of a substrate or substrate support using a first optical sensor. In one or more embodiments, monitoring the first temperature includes detecting energy having a first wavelength in the range of 3.17 micrometers to 3.67 micrometers.

[0097] Operation 1007 includes: monitoring a second temperature of the plate using a second optical sensor. In one or more embodiments, monitoring the second temperature includes detecting energy having a second wavelength in the range of 2.48 micrometers to 2.98 micrometers.

[0098] Operation 1009 includes detecting the coating condition of the plate. In one or more embodiments, detecting the coating condition includes (in operation 1011) detecting a decrease in the reading of a first temperature, and (in operation 1013) monitoring an increase in the reading of a second temperature substantially simultaneously with the decrease in the reading. In one or more embodiments, the coating condition is a predetermined thickness of coating applied to the second surface 173 and / or the first surface 172 of the plate 171 by the reaction process gas.

[0099] Operation 1015 includes adjustment operations. Adjustment may include one or more of the following: adjusting operating parameters (such as the input power of at least one of the heat sources supplied to the chamber); stopping deposition in operation 1003 and initiating a chamber downtime cycle; initiating preventative maintenance operations (such as including opening the chamber); postponing subsequent iterations of deposition; and / or initiating cleaning operations (such as operation 1103 of method 1100 for cleaning the chamber) using a cleaning formulation.

[0100] Operation 1017 includes generating an alarm. For example, an alarm may indicate a cleaning instruction for the board. In one or more embodiments, the cleaning instruction instructs an operator (e.g., on a display of the user interface) to mitigate coating on the board. The board can be cleaned before accumulation degrades processing efficiency. In one or more embodiments, the cleaning instruction provides the operator with an estimate of coating progress, such as the remaining usable chamber operating time before processing efficiency becomes severely degraded. The operator can use this estimate of coating progress to plan and perform appropriate maintenance activities to reduce machine downtime, reduce costs and resource consumption, and increase substrate throughput using the process chamber.

[0101] Figure 11 This is a schematic block diagram of a chamber cleaning method 1100 according to one or more embodiments. For example, method 1100 may be performed before or after substrate processing method 1000.

[0102] Operation 1101 of method 1100 includes heating the substrate support.

[0103] Operation 1103 includes: flowing one or more cleaning gases over the plate and / or substrate support to remove the coating from the plate and / or substrate support. For example, one or more cleaning gases may flow through the lower portion 136a and / or the upper portion 136b.

[0104] Operation 1105 includes: monitoring a first temperature of the substrate support using a first optical sensor. In one or more embodiments, monitoring the first temperature includes detecting energy having a first wavelength in the range of 3.17 micrometers to 3.67 micrometers.

[0105] Operation 1107 includes: monitoring a second temperature of the plate using a second optical sensor. In one or more embodiments, monitoring the second temperature includes detecting energy having a second wavelength in the range of 2.48 micrometers to 2.98 micrometers.

[0106] Operation 1109 includes detecting the cleanliness of the plate. In one or more embodiments, detecting the cleanliness includes (in operation 1111) detecting an increase in the reading of a first temperature, and (in operation 1113) monitoring a decrease in the reading of a second temperature substantially simultaneously with the increase in the first temperature. In one or more embodiments, the cleanliness is a second predetermined thickness (e.g., less than the predetermined thickness of the coating condition). In the cleanliness condition, the coating on the plate is reduced to or less than the second predetermined thickness.

[0107] Operation 1115 includes adjustment operations. Adjustment may include one or more of the following: adjusting operating parameters (such as the input power of at least one of the heat sources supplied to the chamber); stopping the cleaning of operation 1103 and starting a chamber downtime cycle; starting preventive maintenance operations (such as including opening the chamber); postponing subsequent iterations of cleaning; and / or starting a deposition operation (e.g., operation 1003 of method 1000 for depositing a layer on a substrate).

[0108] Operation 1117 includes generating an alarm. For example, an alarm may indicate that cleaning operation 1103 can be terminated. In one or more embodiments, an alarm instructs an operator (e.g., on a display of the user interface) to begin the deposition operation.

[0109] Information from method 1000 and / or method 1100 (such as the first temperature, the second temperature, an increase in reading, and / or a decrease in reading) can be stored and tracked as data. In one or more embodiments, the data is analyzed and / or compared using averaging, derivative, modeling, imaging, and / or other data analysis techniques. For example, optical sensors 505 and 506 can capture images and analyze image intensity to detect the first and second temperatures.

[0110] The benefits of this disclosure include: accurate, rapid, efficient, and automatic detection of the temperature of the substrate support 106 (and / or substrate 102) and the temperature of the plate 171; accurate, rapid, efficient, and automatic detection of the coating condition of the plate 171; accurate, rapid, efficient, and automatic detection of the cleanliness of the plate 171; reduced gas diversion away from the substrate 102 and substrate support 106; adjustable parameters (e.g., temperature, airflow path, airflow velocity, and / or gas pressure) under various operating conditions (such as low rotational speed, high pressure, and / or low flow rate); a wider and / or more modular adjustable range; and increased deposition uniformity. The benefits of this disclosure also include: smaller chamber footprint; reduced or eliminated contamination of chamber components; smaller cleaning volume and easier cleaning; increased component life; reduced chamber downtime; and increased throughput. The benefits of this disclosure also include: increased deposition repeatability and / or cleaning repeatability.

[0111] For example, the implementation of this disclosure is modular and can be used under various processing (e.g., deposition) operations and / or cleaning operations (including various operating parameters).

[0112] We envision combining one or more aspects disclosed herein. For example, processing chamber 100, controller 190, one or more sensor elements 195, 196, 197, 198, etc., can be combined. Figure 4 The curves in the text, sensor element 500, Figure 9A The curve in Figure 9BThe curves, methods 1000, and / or methods 1100 are combined with one or more aspects, features, components, operations, and / or properties. For example, combining... Figure 4 The operations and / or parameters described herein may be combined with the operations and / or parameters of method 1000 and / or method 1100. Furthermore, we envision that one or more aspects disclosed herein may include some or all of the benefits described above.

[0113] While the foregoing relates to embodiments of this disclosure, other and additional embodiments of this disclosure may be devised without departing from the basic scope, and the scope is defined by the following claims.

Claims

1. A system for processing a substrate and suitable for semiconductor manufacturing, the system comprising: A chamber body, the chamber body including one or more sidewalls; cover; A window, the one or more sidewalls, the window and the cover at least partially define the internal volume; One or more heat sources are configured to heat the internal volume; A substrate support member, wherein the substrate support member is disposed within the internal volume; A first optical sensor, configured to detect energy having a first wavelength of less than 4.0 micrometers; as well as A second optical sensor is configured to detect energy having a second wavelength less than the first wavelength.

2. The system of claim 1, further comprising a plate disposed in the internal volume between the substrate support and the window.

3. The system of claim 2, wherein the first wavelength is in the range of 3.17 micrometers to 3.67 micrometers.

4. The system of claim 3, wherein the second wavelength is in the range of 2.48 micrometers to 2.98 micrometers.

5. The system of claim 4, further comprising a beam splitter configured to: Transmitting the energy having the second wavelength; and The energy having the first wavelength is reflected.

6. The system of claim 4, further comprising a controller, the controller including instructions that, when executed, cause a plurality of operations to be performed, the plurality of operations including: Heating the substrate, which is at least partially supported by the substrate support member; One or more process gases are flowed over the substrate to form one or more layers on the substrate; The first temperature of the substrate or the substrate support is monitored using the first optical sensor; and The second optical sensor is used to monitor the second temperature of the plate.

7. The system of claim 6, wherein the plurality of operations further includes detecting the coating condition of the plate, the detection comprising: The first reading of the first temperature increases; as well as The second reading, which detects the second temperature, increases substantially simultaneously with the increase in the first reading.

8. The system of claim 1, further comprising: A first light emitter is configured to emit a first light beam toward a first region; as well as A second light emitter is configured to emit a second light beam toward a second region, wherein the second region overlaps with the first region by at least 80%.

9. The system of claim 2, wherein the window comprises a first quartz and the plate comprises a second quartz.

10. The system of claim 9, wherein the second quartz has a second hydroxyl concentration of greater than 750 ppm.

11. The system of claim 10, wherein the first quartz has a first hydroxyl concentration of less than 100 parts per million (ppm).

12. The system of claim 11, wherein the concentration of the second hydroxyl group is 900 ppm or greater.

13. The system of claim 12, wherein the concentration of the first hydroxyl group is 30 ppm or less.

14. A system for processing a substrate and suitable for semiconductor manufacturing, the system comprising: A chamber body, the chamber body including one or more sidewalls; cover; A window, the one or more sidewalls, the window and the cover at least partially define an internal volume, and the window includes a first quartz. One or more heat sources are configured to heat the internal volume; A substrate support member, wherein the substrate support member is disposed within the internal volume; as well as A plate, which is disposed in the internal volume between the substrate support and the window, the plate comprising a second quartz having a hydroxyl concentration greater than 750 ppm.

15. The system of claim 14, wherein the first quartz has a hydroxyl concentration of less than 100 parts per million (ppm).

16. The system of claim 15, wherein the plate is disposed between the substrate support and the window.

17. The system of claim 16, wherein the plate divides the volume between the substrate support and the window into a lower portion and an upper portion.

18. The system of claim 17, further comprising a controller, the controller including instructions that, upon execution, cause a plurality of operations to be performed, the plurality of operations including: Heating the substrate, which is at least partially supported by the substrate support member; One or more process gases are flowed over and under the substrate to form one or more layers on the substrate; A first temperature of the substrate or the substrate support is monitored using a first optical sensor; and A second optical sensor is used to monitor the second temperature of the plate.

19. A system for processing a substrate and suitable for semiconductor manufacturing, the system comprising: A chamber body, the chamber body including one or more sidewalls; cover; A window, the one or more sidewalls, the window and the cover at least partially define the internal volume; One or more heat sources are configured to heat the internal volume; A substrate support member, wherein the substrate support member is disposed within the internal volume; A plate, wherein the plate is disposed within the internal volume between the substrate support and the window; as well as The controller includes instructions that, upon execution, cause a plurality of operations to be performed, the plurality of operations including: Heating the substrate, which is at least partially supported by the substrate support member. One or more process gases are flowed over the substrate to form one or more layers on the substrate. A first temperature is monitored using a first optical sensor on the substrate or the substrate support. A second optical sensor is used to monitor the second temperature of the plate.

20. The system of claim 19, wherein: Monitoring the first temperature includes detecting energy having a first wavelength in the range of 3.17 micrometers to 3.67 micrometers; and Monitoring the second temperature includes detecting energy having a second wavelength in the range of 2.48 micrometers to 2.98 micrometers.

Images