A frequency quasi-independent controllable double-frequency electric small rectifier circuit

Abstract

The application discloses a kind of frequency quasi-independent controllable dual-frequency electric small rectifier circuit, belongs to radio frequency energy collection field.The rectifier circuit includes a dual-frequency matching network, a direct-current blocking capacitor, two Schottky diodes, a filter capacitor and a resistance load.The dual-frequency matching network is constituted by a capacitor, an inductor and a microstrip line, for realizing impedance matching to two operating frequency points, and quasi-independent regulation and control to the position of two frequency points can be realized by adjusting the value of inductor and the length of microstrip line respectively;Microstrip line is bent five times to realize the miniaturization of the overall structure of the circuit.Direct-current blocking capacitor is used to block direct current component, to avoid energy feedback;Two Schottky diodes are used to convert radio frequency signal into direct current energy;Filter capacitor is used to improve the smoothness of output direct current energy, to improve energy conversion efficiency.The application has compact structure and frequency point position controllable, and is suitable for dual-band radio frequency energy collection scene.

Description

Technical Field

[0001] This invention relates to the field of radio frequency energy harvesting, and more particularly to a frequency-quasi-independent controllable dual-frequency small-amplitude rectifier circuit. Background Technology

[0002] With the development of the Internet of Things (IoT) and wireless sensor networks, the demand for low-power wireless electronic devices is increasing. Generally, low-power wireless electronic devices rely primarily on batteries for power, but battery life is limited, restricting the operational duration of these devices; furthermore, discarded batteries can cause environmental pollution. Considering the abundant radio frequency (RF) energy in the environment, RF energy harvesting technology can capture this energy and convert it into DC power to power low-power electronic devices, ensuring continuous power supply and reducing usage and maintenance costs.

[0003] As a crucial component of a radio frequency (RF) energy harvesting system, the rectifier circuit is responsible for converting the RF energy received by the antenna into DC power, and its performance directly affects the overall system performance. In real-world environments, electromagnetic energy is distributed across multiple frequency bands. To improve RF energy harvesting capabilities, it is necessary to design a rectifier circuit capable of simultaneously harvesting RF energy from two frequency bands—a dual-frequency rectifier circuit—thereby effectively enhancing RF energy harvesting capabilities.

[0004] The core of dual-frequency rectifier design lies in the dual-frequency impedance matching network. To meet design requirements, various matching network schemes have been proposed in recent years, such as L-type networks, multi-stub networks, half-wavelength transmission lines, stepped impedance, T-type networks, coupled-line networks, and impedance compression networks, to satisfy the design needs of dual-frequency rectifier circuits. However, existing transmission line models suffer from complex structures and large circuit sizes. In contrast, LC matching networks can achieve smaller circuit sizes. However, LC networks have a large number of capacitors and inductors, and parasitic effects during soldering can easily cause frequency shifts. Furthermore, existing dual-frequency rectifier circuits cannot achieve independent tuning of the dual-frequency resonant points, resulting in poor environmental adaptability. Therefore, there is an urgent need to design dual-frequency rectifier circuits that combine high efficiency, miniaturization, and quasi-independent frequency controllability to better meet the radio frequency energy harvesting requirements of applications such as the Internet of Things and wireless sensor networks. Summary of the Invention

[0005] To address the problems of the prior art, this invention proposes a frequency-quasi-independent and controllable dual-frequency rectifier circuit. By employing a dual-frequency matching network composed of inductors, capacitors, and microstrip lines, the rectifier circuit achieves effective utilization of radio frequency energy at two different frequencies, thereby improving the ability to harvest radio frequency energy.

[0006] This invention adopts the following technical solution: a frequency-quasi-independent controllable dual-frequency small-voltage rectifier circuit, comprising:

[0007] A dual-frequency matching network serves as the input to the radio frequency signal;

[0008] A DC blocking capacitor, the input terminal of which is connected to the output terminal of the dual-frequency matching network;

[0009] The first Schottky diode has its input terminal connected to the output terminal of the DC blocking capacitor.

[0010] The second Schottky diode has its input terminal connected to the output terminal of the DC blocking capacitor.

[0011] The input terminals of the first Schottky diode and the second Schottky diode form a common node;

[0012] The filter capacitor is connected to the output terminal of the first Schottky diode;

[0013] A resistive load is connected to the output terminal of the first Schottky diode;

[0014] The dual-frequency matching network includes a first capacitor, a first inductor, and a third microstrip line. The input terminal of the first capacitor is connected to the first microstrip line, which introduces radio frequency signals. The output terminal of the first capacitor is connected to the input terminal of the first inductor via a second microstrip line. One end of the third microstrip line is connected to the bottom of the second microstrip line, and the other end of the third microstrip line is connected to ground via a grounding hole. The output terminal of the first inductor is connected to the input terminal of the DC blocking capacitor via a fourth microstrip line. The output terminal of the DC blocking capacitor is connected to the anode of the first Schottky diode and the cathode of the second Schottky diode via a fifth microstrip line. The cathode of the first Schottky diode is connected to the input terminal of the filter capacitor and the resistive load via a seventh microstrip line. The anode of the second Schottky diode is connected to ground via a grounding hole on a sixth microstrip line. The output terminal of the filter capacitor is connected to ground via a grounding hole on an eighth microstrip line, and the resistive load is connected to ground via a grounding hole on a ninth microstrip line.

[0015] Furthermore, the dual-frequency matching network performs impedance matching on the two operating frequencies, and by adjusting the value of the first inductor and the length of the third microstrip line, the resonant frequency of the two dual-frequency small rectifier circuits can be independently controlled; the third microstrip line in the dual-frequency matching network is bent five times.

[0016] Furthermore, the impedance Z of the circuit on the right side of the dual-frequency matching network L Equivalent to:

[0017] ;

[0018] In the formula, R is the real part of the circuit impedance, X is the imaginary part of the circuit impedance, and j represents the imaginary unit.

[0019] Dual-frequency matching networks are used for impedances of The circuit on the right side undergoes impedance transformation, specifically as follows:

[0020] The first inductor is connected in series with the dual-frequency matching network, and the impedance of the first inductor is... Represented as:

[0021] ;

[0022] in, Represents angular frequency. Represents the first inductor;

[0023] The impedance transformation after passing through the first inductor is:

[0024] ;

[0025] The third microstrip line is connected in parallel, and the input impedance of the third microstrip line is... Represented as:

[0026] ;

[0027] In the formula, The characteristic impedance of the third microstrip line. The impedance of the third microstrip line terminal load. Represents the phase constant. The length of the third microstrip line is represented by tan; tan represents the tangent function.

[0028] The impedance transformation after passing through the third microstrip line is as follows:

[0029] ;

[0030] The first capacitor is connected in series, and the impedance of the first capacitor is... Represented as:

[0031] ;

[0032] in Represents the first capacitor;

[0033] The impedance after passing through the first capacitor is the same as the impedance after passing through the dual-frequency network. , represented as:

[0034] .

[0035] Furthermore, the length of the third microstrip line is at least one-twentieth of the operating wavelength; the width of the third microstrip line is at least one two-hundredth of the operating wavelength.

[0036] Furthermore, the thickness of the dielectric substrate is 0.5-5 mm.

[0037] Furthermore, the rectifier circuit operates at frequencies of 0.9 GHz and 1.8 GHz.

[0038] Furthermore, the overall length of the rectifier circuit is 21.2 mm, and the overall width of the rectifier circuit is 32 mm. The value of the first capacitor in the dual-frequency matching network is 1.5 pF. The length of the first microstrip line to the left of the first capacitor is 4 mm, and the width is 2.57 mm. The length of the second microstrip line to the right of the first capacitor is 3 mm, and the width is 2.57 mm. The length of the third microstrip line in the dual-frequency matching network below the second microstrip line is 34 mm, and the width is 2.57 mm. The value of the first inductor in the dual-frequency matching network to the right of the second microstrip line is 14 nH. The length of the fourth microstrip line to the right of the first inductor is 2 mm, and the width is 2.57 mm. The value of the DC blocking capacitor to the right of the fourth microstrip line is 100 Nm. The fifth microstrip line to the right of the DC blocking capacitor has a length of 2mm and a width of 2.57mm. The sixth microstrip line to the right of the fifth microstrip line is connected to ground through a grounding hole, with a length and width of 1.8mm and a grounding hole radius of 0.3mm. The seventh microstrip line above the sixth microstrip line has a length of 4.57mm and a width of 2.57mm. The filter capacitor to the right of the seventh microstrip line has a value of 100pF. The eighth microstrip line to the right of the filter capacitor is connected to ground through a grounding hole, with a length and width of 1.8mm and a grounding hole radius of 0.3mm. The resistance load has a value of 3500Ω. The ninth microstrip line above the resistance load is connected to ground through a grounding hole, with a length and width of 1.8mm and a grounding hole radius of 0.3mm.

[0039] The present invention has the following beneficial technical effects:

[0040] The rectifier circuit disclosed in this invention can change the position of its low-frequency resonant frequency by controlling the length of the third microstrip line 3, while having little effect on the high-frequency resonant frequency; similarly, adjusting the value of the first inductor L1 can change the position of its high-frequency resonant frequency, while having virtually no effect on the low-frequency resonant frequency.

[0041] This invention discloses a frequency-quasi-independent controllable dual-frequency electrically small rectifier circuit with overall dimensions of 0.06λ0×0.09λ0×0.003λ0 (ka=0.35<1, k is the wave number, a is the radius of the smallest sphere surrounding the entire antenna structure, meeting the requirements for electrically small size), where λ0 is the wavelength corresponding to the low resonant frequency of 0.9GHz; when the input power is 0dBm and the load is 3500Ω, the rectifier circuit has a rectification efficiency of 75.1% at 0.9GHz and a rectification efficiency of 71.3% at 1.8GHz. Attached Figure Description

[0042] Figure 1This is a schematic diagram of the structure of the frequency quasi-independent controllable dual-frequency small rectifier circuit of the present invention.

[0043] Figure 2 This is a schematic diagram of the frequency quasi-independent controllable dual-frequency small rectifier circuit of the present invention.

[0044] Figure 3 This is a graph showing the relationship between the reflection coefficient and the first inductor of the frequency quasi-independent controllable dual-frequency small rectifier circuit of the present invention.

[0045] Figure 4 This is a graph showing the relationship between the reflection coefficient of the frequency quasi-independent controllable dual-frequency small rectifier circuit of the present invention and the length of the third microstrip line.

[0046] Figure 5 The graph shows the relationship between the reflection coefficient and rectification efficiency of the frequency-independent controllable dual-frequency rectifier circuit of the present invention and the frequency.

[0047] Figure 6 This is a graph showing the relationship between the rectification efficiency and input power of the frequency quasi-independent controllable dual-frequency small rectifier circuit of the present invention at the low-frequency resonant frequency of 0.9GHz.

[0048] Figure 7 This is a graph showing the relationship between the rectification efficiency and input power of the frequency quasi-independent controllable dual-frequency small rectifier circuit of the present invention at the high-frequency resonant frequency of 1.8GHz.

[0049] In the diagram: 1-First microstrip line, 2-Second microstrip line, 3-Third microstrip line, 4-Fourth microstrip line, 5-Fifth microstrip line, 6-Sixth microstrip line, 7-Seventh microstrip line, 8-Eighth microstrip line, 9-Ninth microstrip line, C1-First capacitor, L1-First inductor, C2-DC blocking capacitor, D1-First Schottky diode, D2-Second Schottky diode, C3-Filter capacitor, R1-Resistive load. Detailed Implementation

[0050] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0051] This invention discloses a frequency-quasi-independent controllable dual-frequency small-voltage rectifier circuit. Figure 1 This is a schematic diagram of a quasi-independent controllable dual-frequency small rectifier circuit operating at 0.9 GHz and 1.8 GHz, according to an embodiment. It includes a dielectric substrate, a circuit structure disposed on the upper surface of the dielectric substrate, and a metal base plate disposed on the lower surface of the dielectric substrate.

[0052] The dielectric substrate is polytetrafluoroethylene (PTFE), with a relative permittivity of 2.2, a relative permeability of 1.0, a loss tangent of 0.0009, and a thickness of 1 mm.

[0053] like Figure 1 As shown, a frequency-quasi-independent controllable dual-frequency small rectifier circuit includes:

[0054] A dual-frequency matching network serves as the input to the radio frequency signal;

[0055] The input terminal of the DC blocking capacitor C2 is connected to the output terminal of the dual-frequency matching network.

[0056] The input terminal of the first Schottky diode D1 is connected to the output terminal of the DC blocking capacitor;

[0057] The input terminal of the second Schottky diode D2 is connected to the output terminal of the DC blocking capacitor;

[0058] The input terminals of the first Schottky diode D1 and the second Schottky diode D2 form a common node;

[0059] The filter capacitor C3 is connected to the output terminal of the first Schottky diode D1;

[0060] The resistive load R1 is connected to the output terminal of the first Schottky diode D1;

[0061] The dual-frequency matching network includes a first capacitor C1, a first inductor L1, and a third microstrip line 3. The input terminal of the first capacitor C1 is connected to the first microstrip line 1, which introduces radio frequency signals. The output terminal of the first capacitor C1 is connected to the input terminal of the first inductor L1 via a second microstrip line 2. One end of the third microstrip line 3 is connected to the bottom of the second microstrip line 2, and the other end of the third microstrip line 3 is connected to ground via a grounding hole. The output terminal of the first inductor L1 is connected to the input terminal of the DC blocking capacitor C2 via a fourth microstrip line 4. The output terminal of the DC blocking capacitor C2 is connected to the anode of the first Schottky diode D1 and the cathode of the second Schottky diode D2 through the fifth microstrip line 5. The cathode of the first Schottky diode D1 is connected to the input terminal of the filter capacitor C3 and the resistive load R1 through the seventh microstrip line 7. The anode of the second Schottky diode D2 is connected to ground through the grounding hole on the sixth microstrip line 6. The output terminal of the filter capacitor C3 is connected to ground through the grounding hole on the eighth microstrip line 8. The resistive load R1 is connected to ground through the grounding hole on the ninth microstrip line 9.

[0062] In this embodiment, the rectifier diode is a Schottky diode of model SMS7630-005LF, which encapsulates two diode units, namely the first Schottky diode D1 and the second Schottky diode D2.

[0063] Furthermore, the overall length of the rectifier circuit is 21.2mm, and the overall width of the rectifier circuit is 32mm. The value of the first capacitor C1 in the dual-frequency matching network is 1.5pF. The length of the first microstrip line 1 to the left of the first capacitor C1 is 4mm, and the width is 2.57mm. The length of the second microstrip line 2 to the right of the first capacitor C1 is 3mm, and the width is 2.57mm. The length of the third microstrip line 3 in the dual-frequency matching network below the second microstrip line 2 is 34mm, and the width is 2.57mm. The value of the first inductor L1 in the dual-frequency matching network to the right of the second microstrip line 2 is 14nH. The length of the fourth microstrip line 4 to the right of the first inductor L1 is 2mm, and the width is 2.57mm. The value of the DC blocking capacitor C2 to the right of the fourth microstrip line 4 is 100. The fifth microstrip line 5 to the right of the DC blocking capacitor C2 has a length of 2mm and a width of 2.57mm. The sixth microstrip line 6 to the right of the fifth microstrip line 5 is connected to ground through a grounding hole, with a length and width of 1.8mm and a grounding hole radius of 0.3mm. The seventh microstrip line 7 above the sixth microstrip line 6 has a length of 4.57mm and a width of 2.57mm. The filter capacitor C3 to the right of the seventh microstrip line 7 has a value of 100pF. The eighth microstrip line 8 to the right of the filter capacitor C3 is connected to ground through a grounding hole, with a length and width of 1.8mm and a grounding hole radius of 0.3mm. The value of the resistive load R1 is 3500Ω. The ninth microstrip line 9 above the resistive load R1 is connected to ground through a grounding hole, with a length and width of 1.8mm and a grounding hole radius of 0.3mm.

[0064] Figure 2 This is a schematic diagram of the rectifier circuit of the present invention. Furthermore, the dual-frequency matching network performs impedance matching on the two operating frequencies, and by adjusting the value of the first inductor L1 and the length of the third microstrip line 3, the resonant frequency points of the two dual-frequency small rectifier circuits are independently controlled; the third microstrip line 3 in the dual-frequency matching network is bent five times.

[0065] Furthermore, the impedance Z of the circuit on the right side of the dual-frequency matching network L Equivalent to:

[0066] ;

[0067] In the formula, R is the real part of the circuit impedance, X is the imaginary part of the circuit impedance, and j represents the imaginary unit.

[0068] Dual-frequency matching networks are used for impedance Z L The circuit on the right side of the circuit undergoes impedance transformation, specifically as follows:

[0069] The first inductor L1 is connected in series with the dual-frequency matching network, and the impedance of the first inductor L1 is... Represented as:

[0070] ;

[0071] in, Indicates angular frequency;

[0072] The impedance transformation after passing through the first inductor is:

[0073] ;

[0074] The third microstrip line 3 is connected in parallel, and the input impedance of the third microstrip line 3 is... Represented as:

[0075] ;

[0076] In the formula, Z0 is the characteristic impedance of the third microstrip line 3, Z L Let β be the impedance of the load at the terminal of the third microstrip line 3, β be the phase constant, l be the length of the third microstrip line 3, and tan be the tangent function.

[0077] The impedance transformation after passing through the third microstrip line 3 is as follows:

[0078] ;

[0079] The first capacitor C1 is connected in series, and the impedance of the first capacitor C1 is... Represented as:

[0080] ;

[0081] The impedance after passing through the first capacitor C1 is the same as the impedance value after passing through the dual-frequency network. , represented as:

[0082] .

[0083] Furthermore, the length of the third microstrip line 3 is at least one-twentieth of the operating wavelength; the width of the third microstrip line 3 is at least one two-hundredth of the operating wavelength.

[0084] Furthermore, the thickness of the dielectric substrate is 0.5-5 mm.

[0085] Furthermore, the rectifier circuit operates at frequencies of 0.9 GHz and 1.8 GHz.

[0086] like Figure 3As shown, when the value of the first inductor gradually increases from 8nH to 20nH, the position of the low resonant frequency of the rectifier circuit remains basically stable, while the high resonant frequency decreases from 2.26GHz to 1.54GHz. This indicates that the first inductor can adjust the position of the high resonant frequency, while having almost no effect on the low resonant frequency.

[0087] like Figure 4 As shown, when the length of the third microstrip line 3 increases from 28mm to 40mm, the position of the high resonant frequency point of the circuit hardly changes, while the low resonant frequency point decreases from 1.02GHz to 0.82GHz. This indicates that the third microstrip line 3 mainly affects the position of the low resonant frequency point, while having almost no effect on the high resonant frequency point.

[0088] Figure 3 and Figure 4 The results show that by adjusting the parameters of the first inductor L1 and the third microstrip line 3 respectively, the position of the dual-frequency resonant point of the rectifier circuit can be quasi-independently controllable, thereby effectively solving the problem that it is difficult to independently adjust the resonant frequency of multiple frequencies in the prior art, and improving the design flexibility and application value of the rectifier system.

[0089] Figure 5 This figure shows the reflection coefficient S11 and RF energy conversion efficiency as a function of frequency for the frequency-quasi-independent controllable dual-frequency rectifier circuit proposed in this invention when the input power is 0dBm. As can be seen from the figure, the two resonant frequencies of the rectifier circuit are 0.9GHz and 1.8GHz, with corresponding energy conversion efficiencies of 75.1% and 71.3%, respectively. This result demonstrates that the dual-frequency rectifier circuit designed in this invention can achieve high rectification efficiency at two target frequencies, meeting the requirements for dual-frequency RF energy harvesting, and also verifies the correctness and practicality of the circuit design.

[0090] Figure 6 and Figure 7 The figures show the energy conversion efficiency as a function of input power for the frequency-independent controllable dual-frequency rectifier circuit proposed in this invention at two operating frequencies: 0.9 GHz and 1.8 GHz. As can be seen from the figures, at the 0.9 GHz frequency, the rectifier circuit maintains an energy conversion efficiency of over 50% within an input power range of -10 dBm to 2 dBm, with a maximum rectification efficiency of 75.2%. At the 1.8 GHz frequency, the rectifier circuit also maintains an efficiency of over 50% within the same input power range, with a maximum efficiency of 73.3%.

[0091] In summary, this invention provides a quasi-independently controllable dual-frequency rectifier circuit. This circuit enables quasi-independent control of the two operating frequency points by adjusting the inductance value in the matching network and the length of the microstrip line while simultaneously achieving dual-frequency energy harvesting. The circuit has a compact structure, is easy to integrate, and is suitable for radio frequency energy harvesting applications, demonstrating broad application prospects and practical value.

[0092] Of course, those skilled in the art should be able to make various corresponding changes and modifications based on the present invention without departing from its spirit and essence, but all such changes and modifications should fall within the protection scope of the appended claims.

Claims

1. A frequency-quasi-independent controllable dual-frequency small rectifier circuit, characterized in that, include: A dual-frequency matching network serves as the input to the radio frequency signal; A DC blocking capacitor, the input terminal of which is connected to the output terminal of the dual-frequency matching network; The first Schottky diode has its input terminal connected to the output terminal of the DC blocking capacitor. The second Schottky diode has its input terminal connected to the output terminal of the DC blocking capacitor. The input terminals of the first Schottky diode and the second Schottky diode form a common node; The filter capacitor is connected to the output terminal of the first Schottky diode; A resistive load is connected to the output terminal of the first Schottky diode; The dual-frequency matching network includes a first capacitor, a first inductor, and a third microstrip line. The input terminal of the first capacitor is connected to the first microstrip line, which introduces radio frequency signals. The output terminal of the first capacitor is connected to the input terminal of the first inductor via a second microstrip line. One end of the third microstrip line is connected to the bottom of the second microstrip line, and the other end of the third microstrip line is connected to ground via a grounding hole. The output terminal of the first inductor is connected to the input terminal of the DC blocking capacitor via a fourth microstrip line. The output terminal of the DC blocking capacitor is connected to the anode of the first Schottky diode and the input terminal of the third microstrip line via a fifth microstrip line. The cathodes of the two Schottky diodes are connected as follows: the cathode of the first Schottky diode is connected to the input terminal of the filter capacitor and the resistive load through the seventh microstrip line; the anode of the second Schottky diode is connected to ground through a grounding hole on the sixth microstrip line; the output terminal of the filter capacitor is connected to ground through a grounding hole on the eighth microstrip line; and the resistive load is connected to ground through a grounding hole on the ninth microstrip line. The dual-frequency matching network performs impedance matching for the two operating frequencies and independently controls the resonant frequencies of the two dual-frequency small rectifier circuits by adjusting the value of the first inductor and the length of the third microstrip line.

2. The frequency-quasi-independent controllable dual-frequency small-scale rectifier circuit according to claim 1, characterized in that, The third microstrip line in the dual-frequency matching network was bent five times.

3. The frequency-quasi-independent controllable dual-frequency small-scale rectifier circuit according to claim 1, characterized in that, The impedance Z of the circuit on the right side of the dual-frequency matching network L Equivalent to: ； In the formula, R is the real part of the circuit impedance, X is the imaginary part of the circuit impedance, and j represents the imaginary unit. Dual-frequency matching networks are used for impedances of The circuit on the right side undergoes impedance transformation, specifically as follows: The first inductor is connected in series with the dual-frequency matching network, and the impedance of the first inductor is... Represented as: ； in, Represents angular frequency. Represents the first inductor; The impedance transformation after passing through the first inductor is: ； The third microstrip line is connected in parallel, and the input impedance of the third microstrip line is... Represented as: ； In the formula, The characteristic impedance of the third microstrip line. The impedance of the third microstrip line terminal load. Represents the phase constant. The length of the third microstrip line is represented by tan; tan represents the tangent function. The impedance transformation after passing through the third microstrip line is as follows: ； The first capacitor is connected in series, and the impedance of the first capacitor is... Represented as: ； in Represents the first capacitor; The impedance after passing through the first capacitor is the same as the impedance after passing through the dual-frequency network. , is represented as: 。 4. The frequency-quasi-independent controllable dual-frequency small-scale rectifier circuit according to claim 1, characterized in that, The length of the third microstrip line is at least one-twentieth of the operating wavelength; the width of the third microstrip line is at least one two-hundredth of the operating wavelength.

5. The frequency-quasi-independent controllable dual-frequency small-scale rectifier circuit according to claim 1, characterized in that, The small rectifier circuit is placed on a dielectric substrate, the thickness of which is 0.5-5mm.

6. The frequency-quasi-independent controllable dual-frequency small-scale rectifier circuit according to claim 1, characterized in that, The rectifier circuit operates at frequencies of 0.9 GHz and 1.8 GHz.

7. The frequency-quasi-independent controllable dual-frequency small rectifier circuit according to claim 1, characterized in that, The overall length of the rectifier circuit is 21.2 mm, and the overall width is 32 mm. In the dual-frequency matching network, the first capacitor has a value of 1.5 pF. The first microstrip line to the left of the first capacitor has a length of 4 mm and a width of 2.57 mm. The second microstrip line to the right of the first capacitor has a length of 3 mm and a width of 2.57 mm. The third microstrip line in the dual-frequency matching network below the second microstrip line has a length of 34 mm and a width of 2.57 mm. In the dual-frequency matching network to the right of the second microstrip line, the first inductor has a value of 14 nH. The fourth microstrip line to the right of the first inductor has a length of 2 mm and a width of 2.57 mm. The DC blocking capacitor to the right of the fourth microstrip line has a value of 100 pF. The fifth microstrip line to the right of the DC blocking capacitor has a length of 2mm and a width of 2.57mm. The sixth microstrip line to the right of the fifth microstrip line is connected to ground through a grounding hole, with a length and width of 1.8mm and a grounding hole radius of 0.3mm. The seventh microstrip line above the sixth microstrip line has a length of 4.57mm and a width of 2.57mm. The filter capacitor to the right of the seventh microstrip line has a value of 100pF. The eighth microstrip line to the right of the filter capacitor is connected to ground through a grounding hole, with a length and width of 1.8mm and a grounding hole radius of 0.3mm. The resistance load has a value of 3500Ω. The ninth microstrip line above the resistance load is connected to ground through a grounding hole, with a length and width of 1.8mm and a grounding hole radius of 0.3mm.

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