Substrate processing apparatus, substrate processing method, and storage medium

Abstract

The substrate processing apparatus includes a processing tank, a cover, a chemical solution supply unit, a pressurizing unit, and a control unit. The processing tank has an opening in an upper portion thereof, and is used for processing a substrate by immersing the substrate in a chemical solution. The cover body is configured so as to be able to seal the opening of the processing tank. The chemical solution supply unit supplies a chemical solution to the processing tank. The pressurizing unit pressurizes the chemical liquid at a position upstream of the chemical liquid supply unit. The control unit controls each unit. The control unit immerses the substrate in the chemical solution stored in the processing tank, closes the opening of the processing tank with the lid, and pressurizes the chemical solution stored in the processing tank by supplying the chemical solution pressurized by the pressurizing unit from the chemical solution supply unit to the processing tank.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus, a substrate processing method, and a storage medium. Background Technology

[0002] Previously, a technique for treating substrates such as semiconductor wafers (hereinafter also referred to as wafers) using ozone water was known (see Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2021-190445 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure provides a technique for efficiently processing substrates using a chemical solution.

[0008] Solution for solving the problem

[0009] One aspect of the substrate processing apparatus disclosed herein includes a processing tank, a cover, a solution supply unit, a pressurizing unit, and a control unit. The processing tank has an opening at its upper part and is used to immerse a substrate in a solution for processing. The cover is configured to seal the opening of the processing tank. The solution supply unit supplies solution to the processing tank. The pressurizing unit pressurizes the solution upstream of the solution supply unit. The control unit controls each unit. The control unit immerses the substrate in the solution stored in the processing tank, seals the opening of the processing tank with the cover, and supplies pressurized solution from the solution supply unit to the processing tank, thereby pressurizing the solution stored in the processing tank.

[0010] The effects of the invention

[0011] According to this disclosure, the substrate can be efficiently processed using a chemical solution. Attached Figure Description

[0012] Figure 1 This is a diagram showing the structure of the substrate processing apparatus according to the embodiment.

[0013] Figure 2 This is a diagram showing the peripheral structure of the cover according to the embodiment.

[0014] Figure 3 This is a diagram showing the peripheral structure of the cover according to the embodiment.

[0015] Figure 4 This is a diagram showing the peripheral structure of the cover according to the embodiment.

[0016] Figure 5 This is a flowchart illustrating the substrate processing process performed by the substrate processing apparatus according to the embodiment.

[0017] Figure 6 This is a diagram showing the structure of the substrate processing apparatus according to a variation of embodiment 1.

[0018] Figure 7 Observing from the positive X-axis direction toward the negative X-axis direction Figure 6 The cross-sectional view obtained from the processing tank shown.

[0019] Figure 8 This is a graph illustrating an example of the relationship between the wavelength (nm) of light irradiating the wafer from the light irradiation section and the wafer's light absorption rate (%).

[0020] Figure 9 This is a flowchart illustrating the substrate processing process performed by the substrate processing apparatus according to a modified example 1 of the embodiment.

[0021] Figure 10 This is a diagram showing the structure of the substrate processing apparatus according to Modification 2 of the embodiment.

[0022] Figure 11 This is a flowchart illustrating the substrate processing process performed by the substrate processing apparatus according to Modified Example 2 of the embodiment. Detailed Implementation

[0023] Hereinafter, the substrate processing apparatus, substrate processing method, and storage medium for implementing the present disclosure will be described in detail with reference to the accompanying drawings (hereinafter referred to as "Embodiments"). However, the present disclosure is not limited by these embodiments.

[0024] Furthermore, in the embodiments shown below, expressions such as "fixed," "orthogonal," "perpendicular," or "parallel" are sometimes used, but these expressions need not be strictly "fixed," "orthogonal," "perpendicular," or "parallel." That is, the above expressions allow for deviations in, for example, manufacturing precision, setting precision, etc.

[0025] Furthermore, in the accompanying figures referred to below, to facilitate understanding, an orthogonal coordinate system is sometimes shown, defining mutually orthogonal X-axis, Y-axis, and Z-axis directions, with the positive Z-axis direction set as the vertically upward direction. Additionally, the direction of rotation with the vertical axis as the center of rotation is sometimes referred to as the θ direction.

[0026] A technique for treating substrates such as semiconductor wafers (hereinafter also referred to as wafers) using ozone water is known. However, in the aforementioned prior art, there is room for further improvement in the efficiency of treating substrates using solutions such as ozone water.

[0027] Therefore, a technology is needed that can overcome the above-mentioned problems and thus enable efficient processing of substrates using chemical solutions.

[0028] <Structure of the substrate processing device>

[0029] Reference Figure 1 The structure of the substrate processing apparatus involved in the implementation method will be explained. Figure 1 This is a diagram showing the structure of the substrate processing apparatus according to the embodiment.

[0030] like Figure 1 As shown, the substrate processing apparatus 1 includes a processing liquid generation unit 10 and a substrate processing unit 30. The processing liquid generation unit 10 sequentially generates various processing liquids such as ozone water (an example of a chemical solution), rinsing liquid, and cleaning liquid. The substrate processing unit 30 uses the sequentially generated processing liquids to perform a series of substrate processing steps on the wafer W in a single processing tank 31, including ozone water treatment, rinsing treatment, and cleaning treatment.

[0031] In addition, the substrate processing apparatus 1 includes a processing liquid supply path 21 that is continuously provided from the processing liquid generation unit 10 to the substrate processing unit 30. This processing liquid supply path 21 connects the DIW supply source 22a of the processing liquid generation unit 10 to the substrate processing unit 30.

[0032] The processing fluid supply path 21 is configured by connecting the first supply path 22, the mixer 23 and the second supply path 24 in the order described.

[0033] The first supply path 22 is used to supply the mixer 23 with DIW (Deionized Water) as a raw material for ozone water, DIW as a rinsing liquid, and SC1 (an aqueous solution containing ammonia and hydrogen peroxide) as a cleaning liquid. The first supply path 22 includes, in sequence from the upstream side, a DIW supply source 22a, a degassing module 22b, a cooler 22c, a valve 22d, a pressure regulating valve 22e, and a flow meter 22f.

[0034] The DIW supply source 22a is, for example, a tank for storing DIW. The degassing module 22b removes dissolved gases such as nitrogen dissolved in the DIW supplied from the DIW supply source 22a. By using this degassing module 22b to remove dissolved gases contained in the DIW, ozone gas can be efficiently dissolved in the DIW.

[0035] Cooler 22c cools the DIW flowing in the first supply path 22 to a given temperature (e.g., 10°C to 20°C). By using cooler 22c to cool the DIW, ozone gas can be efficiently dissolved in the DIW.

[0036] The constant pressure valve 22e adjusts the flow rate of DIW supplied to the mixer 23 based on the flow rate of DIW measured by the flow meter 22f. That is, the constant pressure valve 22e implements feedback control based on the flow rate of DIW measured by the flow meter 22f.

[0037] The mixer 23 is connected to the first supply path 22 on the upstream side and to the second supply path 24 on the downstream side. Additionally, the mixer 23 is connected to the acid-based drug supply path 26.

[0038] The acid-based chemical supply path 26 is used to supply the mixer 23 with acid-based chemical solutions such as organic acids (citric acid, acetic acid, etc.), hydrochloric acid, and sulfuric acid. In this embodiment, by supplying the acid-based chemical solution to the DIW, the pH of the DIW is adjusted to be acidic, thereby increasing the concentration of ozone dissolved in the DIW.

[0039] The acid-based drug supply path 26, starting from the upstream side, includes an acid-based drug supply source 26a, a valve 26b, a pressure regulating valve 26c, and a flow meter 26d. The acid-based drug supply source 26a may be, for example, a tank or circulation line capable of generating the acid-based drug.

[0040] The constant pressure valve 26c adjusts the flow rate of the acidic liquid supplied to the mixer 23 based on the flow rate of the acidic liquid measured by the flow meter 26d. That is, the constant pressure valve 26c implements feedback control based on the flow rate of the acidic liquid measured by the flow meter 26d.

[0041] An ozone gas supply path 41 is connected downstream of the connection point of the mixer 23 with the acid solution supply path 26.

[0042] Ozone gas supply path 41 is used to supply ozone gas to mixer 23. Ozone gas supply path 41 has an ozone gas generating section 42 and a valve 43 in sequence from the upstream side. In addition, a check valve may be provided between valve 43 and mixer 23.

[0043] The ozone gas generating unit 42 generates ozone gas from oxygen using known technology. Oxygen, which serves as the raw material for ozone gas, is supplied to the ozone gas generating unit 42 from the oxygen supply path 44. The oxygen supply path 44 includes, from the upstream side, an oxygen supply source 44a, a pressure regulating valve 44b, and a valve 44c. The oxygen supply source 44a is, for example, a tank for storing oxygen.

[0044] In addition, although Figure 1 Although not shown in the figure, the ozone gas generating unit 42 is connected to a cooling water supply unit for supplying cooling water and a cooling water discharge unit for discharging used cooling water.

[0045] An ammonia supply path 51 is connected downstream of the connection point of the ozone gas supply path 41 in the mixer 23.

[0046] Ammonia supply path 51 is used to supply ammonia water, which becomes the raw material for SC1 as a cleaning fluid, to mixer 23. Ammonia supply path 51 includes, from the upstream side, an ammonia supply source 51a, a valve 51b, a pressure regulating valve 51c, and a flow meter 51d. Ammonia supply source 51a is, for example, a tank for storing ammonia water.

[0047] The pressure regulating valve 51c adjusts the flow rate of ammonia water supplied to the mixer 23 based on the flow rate of ammonia water measured by the flow meter 51d. That is, the pressure regulating valve 51c implements feedback control based on the flow rate of ammonia water measured by the flow meter 51d.

[0048] A hydrogen peroxide supply path 52 is connected downstream of the connection point of the ammonia supply path 51 in the mixer 23.

[0049] Hydrogen peroxide water supply path 52 is used to supply hydrogen peroxide water, which becomes the raw material for SC1 as a cleaning fluid, to mixer 23. Hydrogen peroxide water supply path 52 includes, from the upstream side, a hydrogen peroxide water supply source 52a, a valve 52b, a pressure regulating valve 52c, and a flow meter 52d. Hydrogen peroxide water supply source 52a is, for example, a tank for storing hydrogen peroxide water.

[0050] The pressure regulating valve 52c adjusts the flow rate of hydrogen peroxide water supplied to the mixer 23 based on the flow rate of hydrogen peroxide water measured by the flow meter 52d. That is, the pressure regulating valve 52c implements feedback control based on the flow rate of hydrogen peroxide water measured by the flow meter 52d.

[0051] Mixer 23 selectively mixes other liquids or gases with the DIW supplied from the first supply path 22 to sequentially generate various treatment liquids. Specifically, mixer 23 can mix the DIW supplied from the first supply path 22 with acidic liquid supplied from acidic liquid supply path 26 and ozone gas supplied from ozone gas supply path 41 to generate ozone water. Alternatively, mixer 23 can mix the DIW supplied from the first supply path 22 with ammonia water supplied from ammonia water supply path 51 and hydrogen peroxide water supplied from hydrogen peroxide water supply path 52 to generate SC1. Alternatively, mixer 23 can also allow the DIW supplied from the first supply path 22 to flow downstream of mixer 23 as a rinsing liquid without mixing other liquids or gases. A second supply path 24 is connected downstream of mixer 23.

[0052] The second supply path 24 is disposed between the mixer 23 of the processing liquid generation unit 10 and the substrate processing unit 30, and is used to supply various processing liquids supplied from the mixer 23 to the first nozzle 33 of the substrate processing unit 30 (described later). Specifically, the second supply path 24 is used to sequentially supply ozone water, DIW as a rinsing liquid, and SC1 as a cleaning liquid to the first nozzle 33.

[0053] The second supply path 24, starting from the upstream side, includes a pressure regulating valve 24a, a filter 24b, a flow meter 24c, and a valve 24d. The pressure regulating valve 24a adjusts the flow rate of the treated liquid flowing in the second supply path 24 based on the flow rate of the ozone water measured by the flow meter 24c. That is, the pressure regulating valve 24a implements feedback control based on the flow rate of the treated liquid measured by the flow meter 24c.

[0054] Filter 24b removes contaminants such as particulates contained in the various treatment liquids flowing in the second supply path 24.

[0055] At a position upstream of the pressure regulating valve 24a in the second supply path 24, a third supply path 60 branches off from the second supply path 24. The third supply path 60 is connected to the second nozzle 34 of the substrate processing unit 30, which will be described later. The third supply path 60 is used to supply ozone water to the second nozzle 34.

[0056] The third supply path 60 includes, in sequence from the upstream side, a valve 61, a filter 62, a pump 63 (an example of a pressurization unit), and a flow meter 64. The filter 62 removes particulate matter and other pollutants contained in the ozone water flowing in the third supply path 60.

[0057] Pump 63 pressurizes the ozone-rich water flowing in the third supply path 60 to a given pressure higher than atmospheric pressure. The pressurized ozone-rich water is then supplied to the second nozzle 34 via the third supply path 60. In this way, by pressurizing the ozone-rich water, ozone-rich water with a given ozone concentration can be generated efficiently.

[0058] This is because the mole fraction M of ozone gas dissolved in DIW as a raw material liquid is estimated to follow Henry's law as shown in equation (1), in which the mole fraction M of dissolved ozone gas is proportional to the partial pressure P of ozone in the gas.

[0059] M = H -1 ·P…(1)

[0060] H: Henry's constant

[0061] Here, the "given ozone concentration" mentioned above is, for example, the ozone concentration that can remove (strip) the resist film formed on wafer W, and is in the range of 500 mg / L to 1500 mg / L. Furthermore, the "given pressure" mentioned above is, for example, the pressure that can maintain the ozone concentration of the ozonated water at the given ozone concentration, and is in the range of 0.6 MPa to 2.0 MPa.

[0062] The substrate processing unit 30 includes a processing tank 31, a holding unit 32, a first nozzle 33 (an example of another liquid supply unit), a second nozzle 34 (an example of a liquid supply unit), a first liquid discharge unit 35 (an example of a liquid discharge unit), a second liquid discharge unit 36, and a cover 37.

[0063] The processing tank 31 is a box-shaped tank with an opening 31a at the top, and various processing liquids are stored sequentially inside the processing tank 31. That is, ozone water, DIW as a rinsing liquid, or SC1 as a cleaning liquid are stored sequentially in the processing tank 31. A wafer W of a substrate group arranged in an upright state is immersed in the processing liquid stored in the processing tank 31.

[0064] In addition, a liquid-receiving container (not shown) surrounding the processing tank 31 is disposed on the outside of the processing tank 31. The liquid-receiving container receives the processing liquid flowing out from the opening 31a of the processing tank 31.

[0065] The holding unit 32 holds multiple wafers W forming a substrate assembly in an upright, front-to-back arrangement. The holding unit 32 is fixed inside the processing tank 31 at the immersion position where the wafers W are entirely immersed in the processing liquid. The holding unit 32 can accept multiple wafers W from the substrate transport device that transports multiple wafers W and position the multiple wafers W at the immersion position.

[0066] The first nozzle 33 is disposed inside the processing tank 31 and supplies ozone water, DIW as a rinsing fluid, or SC1 as a cleaning fluid to the processing tank 31. The first nozzle 33 extends along the arrangement direction (Y-axis direction) of the plurality of wafers W and sprays ozone water, DIW as a rinsing fluid, or SC1 as a cleaning fluid from a plurality of nozzles arranged along the arrangement direction of the plurality of wafers W.

[0067] The first nozzle 33 is connected to the second supply path 24 of the treatment fluid supply path 21, and sprays ozone water, DIW as a rinsing fluid, or SC1 as a cleaning fluid supplied from the second supply path 24 from multiple nozzle outlets.

[0068] The first nozzle 33 can supply ozone water to the treatment tank 31 at a flow rate greater than that of the ozone water supplied from the second nozzle 34 to the treatment tank 31. Therefore, the opening diameter of the nozzle outlet of the first nozzle 33 is larger than the opening diameter of the nozzle outlet of the second nozzle 34.

[0069] The second nozzle 34 is disposed inside the processing tank 31 at a position lower than the first nozzle 33, and supplies pressurized ozone water to the processing tank 31. The second nozzle 34 extends along the arrangement direction (Y-axis direction) of the plurality of wafers W, and sprays pressurized ozone water from a plurality of nozzles arranged along the arrangement direction of the plurality of wafers W.

[0070] The second nozzle 34 is connected to the third supply path 60 of the treatment liquid supply path 21, and sprays pressurized ozone water supplied from the third supply path 60 from multiple supply ports.

[0071] When the wafer W is processed using pressurized ozone water, the first liquid discharge unit 35 discharges ozone water from the processing tank 31 to the discharge pipe DR. The first liquid discharge unit 35 includes a discharge path 35a, a back pressure valve 35c, a flow meter 35d, and a valve 35e.

[0072] The discharge path 35a is connected in the processing tank 31 at a position above the wafer W and below the opening 31a. In the discharge path 35a, a pressure sensor 35b, a back pressure valve 35c, a flow meter 35d, and a valve 35e are sequentially arranged from the upstream side based on the connection position with the processing tank 31.

[0073] Pressure sensor 35b is positioned upstream of back pressure valve 35c and flow meter 35d in discharge path 35a to detect the pressure of ozone water flowing in discharge path 35a. The detection value of pressure sensor 35b is output to control unit 71, described later. Back pressure valve 35c adjusts the flow rate of ozone water flowing in discharge path 35a based on the flow rate of ozone water measured by flow meter 35d. That is, back pressure valve 35c performs feedback control based on the flow rate of ozone water measured by flow meter 35d.

[0074] The second liquid discharge unit 36 ​​discharges each processing liquid into the discharge pipe DR when switching between the processing liquids used in the ozone water treatment, rinsing treatment, and cleaning treatment of wafer W. The second liquid discharge unit 36 ​​has a discharge path 36a and a valve 36b. The discharge path 36a is connected to the bottom of the processing tank 31.

[0075] The cover 37 is configured to seal the opening 31a of the processing tank 31. Details of the cover 37 will be described later.

[0076] In addition, the substrate processing apparatus 1 also includes a control device 70. The control device 70 controls the operation of each part of the substrate processing apparatus 1. The control device 70 is, for example, a computer, and includes a control unit 71 and a storage unit 72.

[0077] The control unit 71 is a controller. The control unit 71 is implemented by executing various programs stored in the internal storage of the control device 70 using RAM as its working area, for example, by a CPU (Central Processing Unit) or MPU (Micro Processing Unit). Alternatively, the control unit 71 can also be implemented using integrated circuits such as ASICs (Application Specific Integrated Circuits) or FPGAs (Field Programmable Gate Arrays).

[0078] The control unit 71 has a computer-readable storage medium. The storage medium stores the aforementioned program that controls various processes executed in the board processing apparatus 1. The program can be stored in a computer-readable storage medium, or it can be installed onto the storage medium of the control unit 71 from other storage media. Examples of computer-readable storage media include hard disks (HD), floppy disks (FD), optical disks (CD), magneto-optical disks (MO), and memory cards.

[0079] The storage unit 72 is implemented, for example, by semiconductor memory elements such as RAM (Random Access Memory) and flash memory, or storage devices such as hard disks and optical disks.

[0080] <Peripheral Structure of the Cover>

[0081] Figures 2-4 This is a diagram showing the peripheral structure of the cover 37 according to the embodiment. Figure 2 The image shows the cover 37 in an open position, opening the opening 31a of the processing tank 31. Figure 3 The image shows the closed position of the opening 31a of the covering processing tank 31. Figure 4 The image shows the state in which the cover 37 is pressed against the opening 31a of the processing groove 31.

[0082] like Figures 2-4 As shown, the cover 37 is connected to the moving mechanism 371, which allows it to move between an open position and a closed position.

[0083] The processing groove 31 has an upper end portion 311 on its upper side wall, protruding above the opening 31a. The upper end portion 311 is thinner than the other parts of the side wall, and a countersunk hole with a diameter larger than that of the opening 31a is formed at the location of the opening 31a and communicates with the opening 31a. The cover 37, in the closed position, is received in the countersunk hole of the upper end portion 311.

[0084] In addition, a plurality of (two in this case) through holes 31b are formed at the upper end 311, which penetrate the inner wall surface and the outer wall surface of the upper end 311.

[0085] The substrate processing unit 30 includes a plurality of (two in this case) locking members 38. The locking members 38 are provided in such a way that they can be inserted into and removed from the plurality of through holes 31b at the upper end 311. A moving mechanism 381 is connected to each locking member 38 to move the locking member 38 in the horizontal direction.

[0086] With the wafer W placed into the processing tank 31, the control unit 71 uses the moving mechanism 371 to move the cover 37 from the open position to the closed position. As a result, the opening 31a of the processing tank 31 is sealed by the cover 37 (see reference). Figure 3 ).

[0087] Additionally, the control unit 71 moves the two locking members 38 via the moving mechanism 381, thereby causing each locking member 38 to pass through the insertion hole 31b of the upper end 311 (see reference). Figure 4 ).

[0088] The locking member 38 presses the cover 37 toward the opening 31a against the internal pressure generated by the pressurized ozone water supplied to the treatment tank 31. As a result, the opening 31a of the treatment tank 31 can be kept sealed by the cover 37.

[0089] <Substrate Processing Process>

[0090] Next, refer to Figure 5 The process of substrate processing involved in the implementation method will be explained. Figure 5 This is a flowchart illustrating the substrate processing process performed by the substrate processing apparatus 1 according to the embodiment. Figure 5 Each of the processing procedures shown is executed under the control of the control unit 71.

[0091] exist Figure 5 Before the series of substrate processing shown begins, the processing tank 31 is not filled with processing liquid. That is, the processing tank 31 is in an idle state before the series of substrate processing begins.

[0092] like Figure 5As shown, in the substrate processing apparatus 1, ozone water is first supplied from the first nozzle 33 (step S101). Specifically, the control unit 71 controls the processing liquid generation unit 10 to open valves 22d, 24d, 26b, 43, and 44c. This supplies ozone water generated in the mixer 23 to the first nozzle 33 via the second supply path 24. Furthermore, ozone water is sprayed from the outlet of the first nozzle 33 into the processing tank 31 and stored therein. After a predetermined time, the control unit 71 controls the processing liquid generation unit 10 to close valves 22d, 24d, 26b, 43, and 44c. This stops the supply of ozone water from the first nozzle 33.

[0093] Next, in the substrate processing apparatus 1, the wafer W is transferred into the processing tank 31 (step S102). Specifically, the control unit 71 controls a substrate transfer device (not shown) that transfers the wafer W to the holding unit 32 disposed within the processing tank 31. Thus, the wafer W is placed in the immersion position within the processing tank 31. That is, the wafer W is immersed in ozone water stored in the processing tank 31.

[0094] Next, the control unit 71 controls the moving mechanism 371 to seal the opening 31a of the processing tank 31 using the cover 37 (step S103). Furthermore, the control unit 71 controls the moving mechanism 381 to press the cover 37 toward the opening 31a using the locking member 38.

[0095] Next, in the substrate processing apparatus 1, pressurized ozone water is supplied from the second nozzle 34 (step S104). Specifically, the control unit 71 controls the processing liquid generation unit 10 to open valves 22d, 26b, 43, 44c, and 61, and controls the pump 63 to pressurize the ozone water flowing in the third supply path 60. As a result, the ozone water generated in the mixer 23 is pressurized in the third supply path 60, and the pressurized ozone water is supplied to the second nozzle 34 via the third supply path 60. Furthermore, the ozone water stored in the processing tank 31 is pressurized by spraying the pressurized ozone water from the nozzle 34 into the processing tank 31.

[0096] In this way, in the substrate processing apparatus 1 according to the embodiment, with the opening 31a of the processing tank 31 sealed by the cover 37, the ozone water in the processing tank 31 is pressurized using pressurized ozone water. As a result, it is possible to prevent the ozone concentration of the ozone water around the wafer W from decreasing due to the pressure drop of the ozone water in the processing tank 31.

[0097] That is, in the embodiment, by pressurizing the ozone water in the processing tank 31, the concentration of ozone water around the wafer W can be maintained, so the wafer W can be processed efficiently using ozone water.

[0098] Next, the control unit 71 maintains the discharge rate of ozone water from the first liquid discharge unit 35 at a given value (step S105). Specifically, the control unit 71 opens the valve 35e and controls the valve opening of the back pressure valve 35c to a first valve opening to maintain the measured value of the flow meter 35d at a given value. The first valve opening is the valve opening used to reduce the valve opening of the back pressure valve 35c.

[0099] That is, in the substrate processing apparatus 1 according to the embodiment, when pressurizing the ozone water in the processing tank 31 with pressurized ozone water, the increase in the amount of ozone water discharged from the first liquid discharge section 35 caused by the increase in the hydraulic pressure of the ozone water in the processing tank 31 is suppressed by reducing the valve opening of the back pressure valve 35c.

[0100] Therefore, the drop in hydraulic pressure of the ozone water in the treatment tank 31 can be suppressed, making it less likely for the ozone in the ozone water to decompose. Thus, according to the embodiment, wafer W can be efficiently processed using high-concentration ozone water.

[0101] Next, the control unit 71 determines whether the ozone water treatment of wafer W has ended (step S106). For example, if a predetermined time has elapsed since the pressurized ozone water in step S104 was supplied to the treatment tank 31, the control unit 71 ends the ozone water treatment of wafer W.

[0102] In step S106, if the ozone water treatment of wafer W has not ended (step S106: "No"), the control unit 71 returns the process to step S104.

[0103] On the other hand, when it is determined that the ozone water treatment of wafer W has ended (step S106: "Yes"), the control unit 71 stops supplying pressurized ozone water from the second nozzle 34 (step S107).

[0104] Next, the control unit 71 controls the opening degree of the back pressure valve 35c to a second valve opening degree that is larger than the first valve opening degree (step S108). For example, the control unit 71 makes the back pressure valve 35c fully open. As a result, the ozone water stored in the treatment tank 31 is depressurized.

[0105] In this embodiment, the ozone water in the treatment tank 31 is depressurized before the cover 37 is detached from the treatment tank 31. This allows the cover 37 to be detached while the internal pressure from the ozone water to the cover 37 within the treatment tank 31 is reduced, thus preventing the ozone water from scattering from the treatment tank 31.

[0106] Next, the control unit 71 determines whether the measured value of the pressure sensor 35b has fallen below a predetermined value (step S109). The control unit 71 repeats the determination process of step S109 until the measured value of the pressure sensor 35b falls below the predetermined value (step S109 "No").

[0107] On the other hand, in step S109, if it is determined that the measured value of the pressure sensor 35b has fallen below a predetermined value (step S109: "Yes"), the control unit 71 controls the moving mechanism 381 to release the locking member 38 from pressing the cover 37. Afterwards, the control unit 71 controls the moving mechanism 371 to disengage the cover 37 from the opening 31a of the processing groove 31 (step S110).

[0108] Afterwards, the control unit 71 opens the valve 36b for a specified time to discharge ozone water from the treatment tank 31.

[0109] Next, in the substrate processing apparatus 1, a rinsing process is performed on the wafer W (step S111). Specifically, the control unit 71 opens valves 22d and 24d. As a result, DIW, which serves as the rinsing solution, is stored in the processing tank 31, and the wafer W is immersed in the DIW. As a result, ozone water is removed from the wafer W.

[0110] Afterwards, the control unit 71 closes valves 22d and 24d, and opens valve 36b for a specified time to discharge DIW from the processing tank 31.

[0111] Next, in the substrate processing apparatus 1, a cleaning process is performed on the wafer W (step S112). Specifically, the control unit 71 opens valves 22d, 24d, 51b, and 52b. As a result, SC1, which serves as a cleaning solution, is stored in the processing tank 31, and the wafer W is immersed in SC1. This removes foreign matter such as particles from the wafer W.

[0112] Afterwards, the control unit 71 closes valves 22d, 24d, 51b, and 52b, and opens valve 36b for a specified time to discharge SC1 from the processing tank 31.

[0113] Next, in the substrate processing apparatus 1, a rinsing process for the wafer W is performed (step S113). Specifically, the control unit 71 opens valves 22d and 24d. As a result, DIW, which serves as a rinsing solution, is stored in the processing tank 31, and the wafer W is immersed in the DIW. As a result, SC1 is removed from the wafer W.

[0114] Next, the control unit 71 controls a substrate transport device (not shown) to remove the wafer W from the processing tank 31 (step S114), thus ending a series of substrate processing steps.

[0115] <Variation Example 1>

[0116] Next, refer to Figures 6 to 11 To illustrate variations of the implementation method. Figure 6 This is a diagram showing the structure of the substrate processing apparatus 1 according to a variation of embodiment 1. Figure 7 Observing from the positive X-axis direction toward the negative X-axis direction Figure 6 The cross-sectional view obtained from the processing tank 31 is shown. Furthermore, for ease of understanding, in Figure 7 The first nozzle 33 is omitted.

[0117] like Figure 6 and Figure 7 As shown, the substrate processing unit 30 of the substrate processing apparatus 1 according to Modified Example 1 includes a holding unit 32A and a light irradiation unit 80.

[0118] The holding part 32A holds a wafer W in an upright position. The holding part 32A is fixed inside the processing tank 31 and holds the wafer W at the immersion position where the entire wafer W is immersed in the processing liquid. The holding part 32A can accept a wafer W from a substrate transport device (not shown) that transports a wafer W and position it at the immersion position.

[0119] A light irradiation unit 80 is disposed in the processing tank 31. The light irradiation unit 80 is, for example, a light-emitting diode (LED) or other light source. The light irradiation unit 80 is disposed in the processing tank 31 facing the main surface of the wafer W. The main surface of the wafer W is, for example, the surface of the wafer W on which a resist film is formed. The light irradiation unit 80 may also be disposed in the processing tank 31 facing at least one of the main surface of the wafer W and the back surface opposite to the main surface. The light irradiation unit 80 irradiates the wafer W with light of a wavelength that can transmit ozone water.

[0120] There is a prior art technique that treats a wafer by irradiating it with ultraviolet light while simultaneously using ozone water (see, for example, Japanese Patent Application Publication No. 2002-280339).

[0121] However, in the aforementioned technology, the ultraviolet light irradiating the wafer may be absorbed by the ozone water, causing the ozone water temperature to rise. It is believed that when the temperature of the ozone water rises, ozone decomposes (i.e., the ozone water becomes deactivated), and the concentration of ozone in the ozone water decreases.

[0122] Therefore, the substrate processing apparatus 1 according to Modification 1 is configured to heat the wafer W by irradiating it with light of a wavelength that can pass through ozone water using a light irradiation unit 80 provided in the processing tank 31. This reduces the temperature rise of the ozone water compared to irradiating the wafer W with ultraviolet light. Thus, the wafer W can be heated to a given temperature while suppressing the decrease in ozone concentration caused by the temperature rise of the ozone water. As a result, the substrate processing apparatus 1 according to Modification 1 can efficiently process the wafer W using ozone water.

[0123] Figure 8This is a graph illustrating an example of the relationship between the wavelength (nm) of light irradiated from the light irradiation section 80 onto the wafer W and the light absorption rate (%) of the wafer W. For example... Figure 8 As shown, when the wavelength of the light irradiated from the light irradiation unit 80 to the wafer W is 350 nm or more and 1100 nm or less, the light absorption rate of the wafer W can be increased to about 40% or more. However, when the wavelength of the light irradiated from the light irradiation unit 80 to the wafer W is greater than 600 nm, the light absorption rate of the ozone water increases, causing the temperature of the ozone water around the wafer W to rise. Therefore, from the viewpoint of suppressing the temperature rise of the ozone water around the wafer W and selectively heating the surface of the wafer W, the wavelength of the light irradiated from the light irradiation unit 80 to the wafer W is preferably 350 nm or more and 600 nm or less. Hereinafter, light with a wavelength of 350 nm or more and 600 nm or less will be referred to as "specific wavelength light". The light irradiation unit 80 irradiates the wafer W with specific wavelength light.

[0124] Return to Figure 7 The processing tank 31 has a light-transmitting portion 31c on one of its two sidewalls facing the main and back surfaces of the wafer W. The light-transmitting portion 31c contacts ozone water and transmits light of a specific wavelength. The light-transmitting portion 31c is formed of a material that allows light of a specific wavelength to pass through and has high corrosion resistance to processing solutions such as ozone water. The light-transmitting portion 31c has higher corrosion resistance to processing solutions such as ozone water than other parts of the processing tank 31. Quartz can be used as a material for forming the light-transmitting portion 31c. A light irradiation portion 80 is disposed on the outer surface 31c1 opposite to the inner surface of the light-transmitting portion 31c that contacts the ozone water.

[0125] In this way, by placing the light irradiation unit 80 on the outer surface 31c1 of the light-transmitting portion 31c of one of the two sidewalls facing the main and back surfaces of the wafer W in the processing tank 31, specific wavelength light from the light irradiation unit 80 can be efficiently irradiated onto the main surface of the wafer W. Therefore, the main surface of the wafer W can be heated efficiently.

[0126] Figure 9 This is a flowchart illustrating the substrate processing process performed by the substrate processing apparatus 1 according to a variation of embodiment 1. Figure 9 Each processing step shown is executed under the control of the control unit 71. Furthermore, Figure 9 Steps S101 to S114 in the process Figure 5 Steps S101 to S114 are the same, so detailed explanations are omitted.

[0127] When the opening 31a of the processing tank 31 is sealed by the cover 37 (step S103), the control unit 71 controls the light irradiation unit 80 to irradiate the wafer W with light of a wavelength that can pass through ozone water, i.e., a specific wavelength light, so as to heat the wafer W to a given temperature (step S201).

[0128] Next, pressurized ozone water is supplied from the second nozzle 34 in the substrate processing apparatus 1 (step S104). As a result, the ozone water stored in the processing tank 31 is pressurized.

[0129] In Modification 1, the wafer W is heated by irradiating it with light of a specific wavelength while the ozone water stored in the processing tank 31 is pressurized. This allows the wafer W to be heated to a given temperature while suppressing the decrease in ozone concentration caused by the rising temperature of the ozone water. As a result, the substrate processing apparatus 1 according to Modification 1 can process the wafer W more efficiently using ozone water.

[0130] Next, the control unit 71 maintains the discharge rate of ozone water from the first liquid discharge unit 35 at a given value (step S105).

[0131] Next, the control unit 71 determines whether the ozone water treatment of wafer W has ended (step S106). For example, the control unit 71 may end the ozone water treatment of wafer W if a predetermined time has elapsed since the irradiation of a specific wavelength of light began in step S201.

[0132] In step S106, if the ozone water treatment of wafer W has not ended (step S106: "No"), the control unit 71 causes the process to return to step S201.

[0133] On the other hand, when it is determined that the ozone water treatment of wafer W has ended (step S106 "Yes"), the control unit 71 stops irradiating the specific wavelength light (step S202) and causes the process to proceed to step S107.

[0134] <Variation Example 2>

[0135] In the above embodiments and Modification 1, an example of treating wafer W using ozone water as a solution was described. However, wafer W can also be treated using a solution different from ozone water. Therefore, in Modification 2, an example of treating wafer W using a solution different from ozone water will be described.

[0136] Figure 10 This is a diagram illustrating the structure of the substrate processing apparatus 1 according to a modified example 2 of the embodiment. Figure 10 As shown, the substrate processing apparatus 1 involved in Modification 2 and the substrate processing apparatus 1 involved in Modification 1 (refer to...) Figure 6 The difference lies in the absence of the acid-based liquid supply path 26 and the ozone gas supply path 41. Furthermore, the substrate processing apparatus 1 involved in Modification 2 differs from the substrate processing apparatus 1 involved in Modification 1 (see...). Figure 6 The difference lies in having a liquid medicine supply path 27.

[0137] The solution supply path 27 is connected to the mixer 23 and is used to supply the mixer 23 with a solution different from ozone water. In Modification 2, the solution different from ozone water is simply referred to as "solution". This solution is, for example, SC1 (a mixture of ammonia and hydrogen peroxide water), SC2 (a mixture of hydrochloric acid and hydrogen peroxide water), hydrogen peroxide water (H2O2), dilute hydrofluoric acid (DHF), phosphoric acid (H3PO4), sulfuric acid (H2SO4), SPM (a mixture of sulfuric acid and hydrogen peroxide water), a mixture of hydrofluoric acid and hydrogen water, a mixture of ammonia and hydrogen water, or a mixture of hydrochloric acid and hydrogen water.

[0138] The liquid supply path 27, starting from the upstream side, includes a liquid supply source 27a, a valve 27b, a pressure regulating valve 27c, and a flow meter 27d. The liquid supply source 27a may be, for example, a tank capable of generating liquid, a circulation line, etc.

[0139] The pressure regulating valve 27c adjusts the flow rate of the liquid medicine supplied to the mixer 23 based on the flow rate of the liquid medicine measured by the flow meter 27d. That is, the pressure regulating valve 27c implements feedback control based on the flow rate of the liquid medicine measured by the flow meter 27d.

[0140] Furthermore, in the substrate processing apparatus 1 according to Modification 2, the components other than the solution supply path 27 are replaced with "ozone water" to become the same as those in the substrate processing apparatus 1 according to Modification 1 (see also Modification 1). Figure 6 Since they are the same constituent elements, their descriptions are omitted.

[0141] Figure 11 This is a flowchart illustrating the substrate processing process performed by the substrate processing apparatus 1 according to a modified embodiment 2. Figure 11 Each processing step shown is executed under the control of the control unit 71. Furthermore, Figure 11 Steps S112 to S114 in the middle Figure 9 Steps S112 to S114 are the same, so detailed explanations are omitted.

[0142] exist Figure 11 Before the series of substrate processing shown begins, the processing tank 31 is not filled with processing liquid. That is, the processing tank 31 is in an idle state before the series of substrate processing begins.

[0143] like Figure 11As shown, in the substrate processing apparatus 1, firstly, a chemical solution is supplied from the first nozzle 33 (step S301). Specifically, the control unit 71 controls the processing liquid generation unit 10 to open the valve 27b. As a result, the chemical solution is supplied to the first nozzle 33 via the second supply path 24. Furthermore, the chemical solution is ejected from the nozzle 33's outlet into the processing tank 31 and stored therein. After a predetermined time, the control unit 71 controls the processing liquid generation unit 10 to close the valve 27b. This stops the supply of chemical solution from the first nozzle 33.

[0144] Next, in the substrate processing apparatus 1, the wafer W is transferred into the processing tank 31 (step S302). Specifically, the control unit 71 controls a substrate transfer device (not shown) that transfers the wafer W to the holding unit 32A disposed within the processing tank 31. Thus, the wafer W is placed in the immersion position within the processing tank 31. That is, the wafer W is immersed in the solution stored in the processing tank 31.

[0145] Next, the control unit 71 controls the moving mechanism 371 to seal the opening 31a of the processing tank 31 using the cover 37 (step S303). Furthermore, the control unit 71 controls the moving mechanism 381 to press the cover 37 toward the opening 31a using the locking member 38.

[0146] Next, the control unit 71 controls the light irradiation unit 80 to irradiate the wafer W with light of a wavelength that can pass through the solution, i.e., a specific wavelength light, so as to heat the wafer W to a given temperature (step S304).

[0147] Next, in the substrate processing apparatus 1, pressurized liquid medicine is supplied from the second nozzle 34 (step S305). As a result, the liquid medicine stored in the processing tank 31 is pressurized.

[0148] In Modification 2, the wafer W is heated by irradiating it with light of a specific wavelength while the chemical solution stored in the processing tank 31 is under pressure. This allows the wafer W to be heated to a given temperature while suppressing the decrease in concentration caused by the increase in the temperature of the chemical solution. As a result, the substrate processing apparatus 1 according to Modification 2 can process the wafer W more efficiently using the chemical solution.

[0149] Next, the control unit 71 maintains the discharge volume of the medicine discharged from the first liquid discharge unit 35 at a given value (step S306).

[0150] Next, the control unit 71 determines whether the chemical treatment of wafer W has ended (step S307). For example, if a predetermined time has elapsed since the irradiation of a specific wavelength of light began in step S304, the control unit 71 ends the chemical treatment of wafer W.

[0151] In step S307, if the chemical treatment of wafer W has not ended (step S307: "No"), the control unit 71 returns the process to step S304.

[0152] On the other hand, when it is determined that the chemical treatment of wafer W has ended (step S307: "Yes"), the control unit 71 stops irradiating the specific wavelength light (step S308) and stops supplying the pressurized chemical solution from the second nozzle 34 (step S309).

[0153] Next, the control unit 71 controls the opening degree of the back pressure valve 35c to a second valve opening degree that is larger than the first valve opening degree (step S310). For example, the control unit 71 makes the back pressure valve 35c fully open. As a result, the liquid medicine stored in the treatment tank 31 is depressurized.

[0154] Next, the control unit 71 determines whether the measured value of the pressure sensor 35b has fallen below a predetermined value (step S311). The control unit 71 repeats the determination process of step S311 until the measured value of the pressure sensor 35b falls below the predetermined value (step S311 "No").

[0155] On the other hand, in step S311, if it is determined that the measured value of the pressure sensor 35b has fallen below a predetermined value (step S311: "Yes"), the control unit 71 controls the moving mechanism 381 to release the locking member 38 from pressing the cover 37. Then, the control unit 71 controls the moving mechanism 371 to disengage the cover 37 from the opening 31a of the processing groove 31 (step S312).

[0156] Afterwards, the control unit 71 opens the valve 36b for a specified time to discharge the liquid medicine from the treatment tank 31.

[0157] Next, in the substrate processing apparatus 1, a rinsing process is performed on the wafer W (step S313). Specifically, the control unit 71 opens valves 22d and 24d. As a result, DIW, which serves as the rinsing solution, is stored in the processing tank 31, and the wafer W is immersed in the DIW. As a result, the solution is removed from the wafer W.

[0158] Then, control unit 71 closes valves 22d and 24d, and opens valve 36b for a predetermined time to discharge DIW from processing tank 31. After that, control unit 71 causes the processing to proceed to step S112.

[0159] As described above, the substrate processing apparatus according to the embodiment (for example, substrate processing apparatus 1) includes a processing tank (for example, processing tank 31), a cover (for example, cover 37), a solution supply unit (for example, second nozzle 34), a pressurizing unit (for example, pump 63), and a control unit (for example, control unit 71). The processing tank has an opening at the top (for example, opening 31a) for immersing a substrate (for example, wafer W) in a solution to process the substrate. The cover is configured to seal the opening of the processing tank. The solution supply unit supplies solution to the processing tank. The pressurizing unit pressurizes the solution at a position upstream of the solution supply unit. The control unit controls each unit. The control unit immerses the substrate in the chemical solution stored in the processing tank, seals the opening of the processing tank with a cover, and supplies the pressurized chemical solution from the chemical solution supply unit to the processing tank to pressurize the chemical solution stored in the processing tank. This allows for efficient processing of the substrate using the chemical solution.

[0160] Furthermore, the substrate processing apparatus according to the embodiments may also include a liquid discharge section (for example, a first liquid discharge section 35) for discharging liquid from the processing tank. Alternatively, when the liquid pressurized by the pressurizing section is supplied to the processing tank from the liquid supply section, the control section maintains the discharge amount of liquid from the liquid discharge section at a given value. This allows for more efficient processing of the wafer W using the liquid.

[0161] Alternatively, the chemical discharge unit may include: a discharge path (e.g., discharge path 35a) connected in the processing tank at a position above the substrate and below the opening; and a flow meter (e.g., flow meter 35d) and a back pressure valve (e.g., back pressure valve 35c) disposed in the discharge path. Alternatively, the control unit may control the opening degree of the back pressure valve to a first valve opening degree to maintain the flow meter measurement value at a given value. This allows for more efficient processing of the wafer W using the chemical solution.

[0162] Alternatively, after the substrate is treated with the chemical solution in the processing tank, the control unit stops supplying pressurized chemical solution from the chemical solution supply unit. Then, the opening degree of the back pressure valve is controlled to a second valve opening degree larger than the first valve opening degree to depressurize the chemical solution stored in the processing tank. This prevents the chemical solution from splashing out of the processing tank.

[0163] Alternatively, the liquid discharge section may also be equipped with a pressure sensor (for example, pressure sensor 35b), which is located upstream of the flow meter and back pressure valve in the discharge path. Alternatively, if the pressure sensor reading is below a predetermined value, the control unit may detach the cover from the opening of the treatment tank. This prevents the liquid from scattering from the treatment tank.

[0164] Alternatively, the substrate processing apparatus described in the embodiments may also include other liquid supply units that supply liquid to the processing tank at a flow rate greater than the flow rate of liquid supplied from the liquid supply units to the processing tank. Alternatively, before processing the substrate with the liquid in the processing tank begins, the control unit supplies liquid from other liquid supply units to the processing tank and stores the liquid in the processing tank. This allows for rapid storage of the liquid in the processing tank.

[0165] Furthermore, the substrate processing apparatus according to the embodiments may also include a locking member (as an example, locking member 38), which is provided in such a way that it can be inserted into and removed from a through hole formed on the side wall of the processing tank at a position higher than the opening, and the locking member presses the cover toward the opening. As a result, the opening of the processing tank can be kept sealed by the cover.

[0166] Furthermore, the substrate processing apparatus according to the embodiments may also include a light irradiation unit (for example, light irradiation unit 80), which is disposed in the processing tank and irradiates the substrate with light of a wavelength that can transmit the chemical solution. Alternatively, while the chemical solution stored in the processing tank is pressurized, the control unit uses the light irradiation unit to irradiate the substrate with light of a wavelength that can transmit the chemical solution to heat the substrate. This allows for more efficient processing of the wafer W using the chemical solution.

[0167] Alternatively, the wavelength of the light can be above 350 nm and below 600 nm. This allows for the suppression of temperature rise in the liquid surrounding the substrate and selective heating of the substrate surface.

[0168] Alternatively, the processing tank may have a light-transmitting portion (for example, light-transmitting portion 31c) on at least one of two sidewalls facing the main surface of the substrate and the back surface opposite to the main surface. The light irradiation portion may be disposed on the outer surface opposite to the inner surface of the light-transmitting portion that is in contact with the liquid (for example, outer surface 31c1). This allows for effective heating of the main surface of the substrate.

[0169] Alternatively, the chemical solution can be ozone water, SC1 (a mixture of ammonia and hydrogen peroxide water), SC2 (a mixture of hydrochloric acid and hydrogen peroxide water), hydrogen peroxide water (H2O2), dilute hydrofluoric acid (DHF), phosphoric acid (H3PO4), sulfuric acid (H2SO4), SPM (a mixture of sulfuric acid and hydrogen peroxide water), a mixture of hydrofluoric acid and hydrogen water, a mixture of ammonia and hydrogen water, or a mixture of hydrochloric acid and hydrogen water. This allows for more efficient processing of wafer W using the chemical solution.

[0170] The embodiments disclosed herein should be considered illustrative in all respects and not restrictive. In fact, the above-described embodiments can be implemented in various ways. Furthermore, the above-described embodiments can be omitted, substituted, or modified in various ways without departing from the appended claims and their spirit.

[0171] Explanation of reference numerals in the attached figures

[0172] 1: Substrate processing apparatus; 30: Substrate processing section; 31: Processing tank; 31a: Opening; 31b: Through hole; 31c: Light-transmitting section; 31c1: Outer surface; 33: First nozzle; 34: Second nozzle; 35: First liquid discharge section; 35a: Discharge path; 35b: Pressure sensor; 35c: Back pressure valve; 35d: Flow meter; 37: Cover; 38: Locking member; 63: Pump; 71: Control section; 80: Light irradiation section; W: Wafer.

Claims

1. A substrate processing apparatus comprising: A processing tank having an opening at the top, the processing tank being used to immerse a substrate in a chemical solution to process the substrate; A cover, configured to seal the opening of the processing tank; A drug supply unit that supplies the drug solution to the processing tank; The pressurizing unit pressurizes the liquid medicine at a position upstream of the liquid medicine supply unit; as well as The control department controls all other departments. The control unit immerses the substrate in the pharmaceutical solution stored in the processing tank. The control unit uses the cover to seal the opening of the processing tank. The control unit causes the pressurized medicine solution supplied from the medicine supply unit to the processing tank to pressurize the medicine solution stored in the processing tank.

2. The substrate processing apparatus according to claim 1, wherein, It includes a liquid discharge section that discharges the liquid medicine from the treatment tank. When supplying pressurized medicine from the medicine supply unit to the processing tank, the control unit maintains the discharge amount of medicine from the medicine discharge unit at a given value.

3. The substrate processing apparatus according to claim 2, wherein, The liquid dispensing section is equipped with: The discharge path connects to a position in the processing tank that is above the substrate and below the opening; and A flow meter and a back pressure valve are installed in the discharge path. The control unit controls the valve opening of the back pressure valve to a first valve opening so that the measured value of the flow meter is maintained at a given value.

4. The substrate processing apparatus according to claim 3, wherein, After the substrate has been treated with the chemical solution in the processing tank, the control unit stops supplying the pressurized chemical solution from the chemical solution supply unit. Subsequently, the control unit controls the valve opening of the back pressure valve to a second valve opening that is larger than the first valve opening, in order to reduce the pressure of the medicine stored in the treatment tank.

5. The substrate processing apparatus according to claim 4, wherein, The liquid discharge section is equipped with a pressure sensor, which is located upstream of the flow meter and the back pressure valve in the discharge path. If the pressure sensor detects a value below a specified value, the control unit causes the cover to detach from the opening of the processing tank.

6. The substrate processing apparatus according to claim 1, wherein, The system includes additional drug supply units that supply drug to the processing tank at a flow rate greater than the flow rate of the drug supplied from the original drug supply units to the processing tank. Before the substrate is processed with the chemical solution in the processing tank, the control unit causes the chemical solution to be supplied to the processing tank from the other chemical solution supply unit and to be stored in the processing tank.

7. The substrate processing apparatus according to claim 1, wherein, It also includes a locking member, which is configured to be inserted into and removed relative to a through hole formed in the side wall of the processing groove at a position higher than the opening, and the locking member presses the cover toward the opening.

8. The substrate processing apparatus according to claim 1, wherein, It also includes a light irradiation unit, which is disposed in the processing tank and irradiates the substrate with light of a wavelength that can transmit the pharmaceutical solution. While the liquid medicine stored in the processing tank is pressurized, the control unit uses the light irradiation unit to irradiate the substrate with light of a wavelength that can pass through the liquid medicine to heat the substrate.

9. The substrate processing apparatus according to claim 8, wherein, The wavelength of the light is above 350nm and below 600nm.

10. The substrate processing apparatus according to claim 8, wherein, The processing tank has a light-transmitting portion on at least one of its two sidewalls facing the main surface of the substrate and the back surface opposite to the main surface, which contacts the liquid medicine and allows light to pass through. The light irradiation part is disposed on the outer surface opposite to the inner surface of the light-transmitting part that is in contact with the liquid medicine.

11. The substrate processing apparatus according to any one of claims 1 to 10, wherein, The solution is ozone water, SC1 (a mixture of ammonia and hydrogen peroxide water), SC2 (a mixture of hydrochloric acid and hydrogen peroxide water), hydrogen peroxide water (H2O2), dilute hydrofluoric acid (DHF), phosphoric acid (H3PO4), sulfuric acid (H2SO4), SPM (a mixture of sulfuric acid and hydrogen peroxide water), a mixture of hydrofluoric acid and hydrogen water, a mixture of ammonia and hydrogen water, or a mixture of hydrochloric acid and hydrogen water.

12. A substrate processing method, comprising the following steps; A substrate processing apparatus comprising a processing tank, a cover, a liquid supply unit, and a pressurizing unit is used to immerse a substrate in a liquid stored in the processing tank. The processing tank has an opening at the top and is used to immerse the substrate in the liquid to process the substrate. The cover is configured to seal the opening of the processing tank. The liquid supply unit supplies the liquid to the processing tank. The pressurizing unit pressurizes the liquid at a position upstream of the liquid supply unit. The opening of the processing tank is sealed using the cover. as well as The pressurized medicine solution, supplied from the medicine supply unit to the processing tank, is pressurized by the pressurization unit to pressurize the medicine solution stored in the processing tank.

13. A computer-readable storage medium having a program recorded in a non-transitory manner, the program causing a computer to perform the following processes: A substrate processing apparatus comprising a processing tank, a cover, a liquid supply unit, and a pressurizing unit is used to immerse a substrate in a liquid stored in the processing tank. The processing tank has an opening at the top and is used to immerse the substrate in the liquid to process the substrate. The cover is configured to seal the opening of the processing tank. The liquid supply unit supplies the liquid to the processing tank. The pressurizing unit pressurizes the liquid at a position upstream of the liquid supply unit. The opening of the processing tank is sealed using the cover. as well as The medicine solution is supplied from the medicine supply unit to the treatment tank after being pressurized by the pressurization unit, thereby pressurizing the medicine solution stored in the treatment tank.

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