Composition, mixture, light emitting device and display device

Abstract

The invention discloses a composition, a mixture, a light-emitting device and a display device. The composition comprises a host material and a guest material, the host material comprises an electron donor material, a first electron acceptor material and an exciton modulation mixed material, the exciton modulation mixed material comprises n second electron acceptor materials, n is an integer greater than 0, and n is an integer greater than 0. The LUMO energy level of the first electron acceptor material and the LUMO energy levels of the n second electron acceptor materials are sequentially decreased. The light-emitting layer prepared from the composition is used for the light-emitting device, and the comprehensive performance of the light-emitting device can be effectively improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of light-emitting materials, and in particular to a composition, a mixture, a light-emitting device and a display device. BACKGROUND

[0002] Organic Light Emitting Diodes (OLED) have the advantages of wide color gamut, high color saturation and contrast ratio, and active light emission, and are favored and widely used in display and lighting fields of different sizes.

[0003] A typical OLED device has a sandwiched structure, and specifically, a stack structure composed of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and an electron injection layer is sandwiched between an anode and a cathode. When a certain voltage is applied to the two electrodes of the OLED, positive carriers (holes) are injected into the light-emitting layer from the anode and the hole injection layer through the hole transport layer, and negative carriers (electrons) are injected into the light-emitting layer from the cathode and the electron injection layer through the electron transport layer. The electrons and holes meet in the light-emitting layer and recombine to form excitons, and the energy transition of the excitons generates photons to emit light of a certain wavelength.

[0004] The light-emitting layer prepared from the existing composition has yet to be further improved in the comprehensive performance of the OLED. SUMMARY

[0005] Therefore, the present application provides a composition, a mixture, a light-emitting device and a display device.

[0006] In a first aspect, the present application provides a composition, comprising a host material and a guest material, wherein the host material comprises an electron donor material, a first electron acceptor material and an exciton modulation mixed material, the exciton modulation mixed material comprises n second electron acceptor materials, n is an integer greater than 0, and the n second electron acceptor materials comprise a first second electron acceptor material a1 to a second second electron acceptor material a n , wherein, When n = 1, the LUMO energy level of the first electron acceptor material is greater than the LUMO energy level of the second electron acceptor material a1; when n ≥ 2, the LUMO energy level of the first electron acceptor material is greater than the LUMO energy level of the second electron acceptor material a1, and the LUMO energy level of the second electron acceptor material a x-1 is greater than the LUMO energy level of the second electron acceptor material a x , and x is any integer from 2 to n. The single state energy level and the triplet state energy level of at least one of the first electron acceptor material and the n second electron acceptor materials satisfy |T1-S1|≤0.5eV, wherein T1 is the triplet state energy level and S1 is the single state energy level; The electron donor material has a structure shown in the following formula (I):

[0007] (I) wherein m', n' are each independently selected from any integer from 1 to 4; L is selected from a single bond, a substituted or unsubstituted aromatic group having 6 to 60 carbon atoms, a substituted or unsubstituted heteroaromatic group having 3 to 60 carbon atoms, or any combination of these groups; R, m' R's, n' R's are each independently selected from a substituted or unsubstituted aromatic group having 6 to 60 carbon atoms, a substituted or unsubstituted heteroaromatic group having 3 to 60 carbon atoms, or any combination of these groups; R, m' R's, n' R's are each independently selected from a substituted or unsubstituted aromatic group having 6 to 60 carbon atoms, a substituted or unsubstituted heteroaromatic group having 3 to 60 carbon atoms, or any combination of these groups; The substituted substituent in L, R, R', R" is each independently selected from D, -F, -Cl, -Br, -I, hydroxyl, thiol, carboxyl, nitro, amino, sulfonic acid group, silane group, C1~C 20 alkyl, C1~C 20 alkoxy, C1~C 20 alkylthio, aryl having 6 to 60 ring atoms, aryloxy having 6 to 60 ring atoms, arylthio having 6 to 60 ring atoms, or any combination of these groups.

[0008] In a second aspect, the present application further provides a mixture comprising a solvent and the composition.

[0009] In a third aspect, the present application further provides a light-emitting device comprising an anode, a light-emitting layer and a cathode which are sequentially stacked, wherein the material of the light-emitting layer comprises the composition.

[0010] In a fourth aspect, the present application further provides a display device comprising the light-emitting device.

[0011] The light-emitting layer prepared from the composition described in the present application is used in the light-emitting device, which can effectively improve the service life of the light-emitting device. BRIEF DESCRIPTION OF DRAWINGS

[0012] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings needed in the embodiment description. Obviously, the drawings in the following description only constitute some embodiments of the present application, and for those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0013] Figure 1 is a structural schematic diagram of a light emitting device provided by an embodiment of the present application; Figure 2 is a structural schematic diagram of another light emitting device provided by an embodiment of the present application.

[0014] Reference signs: Light emitting device 100; anode 10; light emitting layer 20; cathode 30; hole transport layer 40; hole injection layer 50; electron transport layer 60; electron injection layer 70. DETAILED DESCRIPTION

[0015] The technical solutions in the embodiments of the present application will be described clearly and completely in the following with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments only constitute some embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative effort belong to the scope of protection of the present application. In addition, it should be understood that the specific embodiments described herein are only for the purpose of illustration and explanation of the present application, and are not intended to limit the present application.

[0016] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this description, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0017] In the present application, the orientation words such as "upper" and "lower" refer to the upper and lower in the actual use or working state of the device, specifically the drawing surface direction in the drawings, unless otherwise stated. In addition, in the description of the present application, the term "comprising" means "including but not limited to". The terms first, second, third, etc. are only used as labels and do not impose numerical requirements or establish an order.

[0018] In the present application, "and / or" describes the association relationship of the associated objects, which means that there can be three kinds of relationships, for example, A and / or B, which can represent the following cases: A exists alone, A and B exist together, and B exists alone. Wherein A and B can be singular or plural.

[0019] In the present application, "at least one" means one or more, and "multiple" means two or more. "One or more", "at least one of the following (one)", or the like, means any combination of these items, including any combination of single item (one) or multiple items. For example, "at least one of a, b, or c", or "at least one of a, b, and c", can mean a, b, c, a-b (i.e., a and b), a-c, b-c, or a-b-c, where a, b, and c can be single or multiple.

[0020] In the present application, in forming another layer "on" a certain layer, "on" is a broad concept, which can mean that the formed another layer is adjacent to the certain layer, or that there is another spacer structure layer between the another layer and the certain layer. For example, forming a second electrode "on" a first carrier functional layer, "on" can mean that the formed second electrode is adjacent to the first carrier functional layer, or that there is another spacer structure layer, such as a light-emitting layer, between the second electrode and the first carrier functional layer.

[0021] Various embodiments of the present application can exist in the form of a range; it should be understood that the description in the form of a range is merely for the convenience and brevity, and should not be understood as a hard limit on the scope of the present application; therefore, it should be considered that the described range has specifically disclosed all possible sub-ranges and single values within the range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the described range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. In addition, whenever a numerical range is indicated in the present application, it refers to any cited number (fraction or integer) within the indicated range.

[0022] In the present application, "substituted" means that a hydrogen atom in a substituent is replaced by a substituent.

[0023] In the present application, when the same substituent appears multiple times, it can be independently selected from different groups. For example, if the general formula contains multiple R1, R1 can be independently selected from different groups.

[0024] In the present application, "substituted or unsubstituted" means that the defined group can be substituted or unsubstituted. When the defined group is substituted, it is understood that the defined group can be substituted with one or more substituents R selected from, but not limited to, a deuterium atom, a cyano group, an isocyano group, a nitro group, or a halogen, a C1-30 alkyl group, a heterocyclic group having 3 to 20 ring atoms, an aromatic group having 6 to 20 ring atoms, a heteroaromatic group having 5 to 20 ring atoms, -NR'R", a silyl group, a carbonyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, a carbamoyl group, a halogen formyl group, a formyl group, an isocyanate group, a thiocyanate group, an isothiocyanate group, a hydroxyl group, a trifluoromethyl group, and the above groups can be further substituted with an acceptable substituent in the art; it is understood that R' and R" in -NR'R" are each independently selected from, but not limited to, H, a deuterium atom, a cyano group, an isocyano group, a nitro group, or a halogen, a C1-10 alkyl group, a heterocyclic group having 3 to 20 ring atoms, an aromatic group having 6 to 20 ring atoms, a heteroaromatic group having 5 to 20 ring atoms.

[0025] In the present application, "ring atom number" means the number of atoms among the atoms constituting a ring itself of a structural compound obtained by bonding atoms into a ring shape (e.g., a monocyclic compound, a fused ring compound, a crosslinked compound, a carbocyclic compound, a heterocyclic compound). When the ring is substituted with a substituent, the atoms included in the substituent are not included in the ring-forming atoms. The same applies to "ring atom number" described below, unless otherwise specified. For example, the ring atom number of a benzene ring is 6, the ring atom number of a naphthalene ring is 10, and the ring atom number of a thiophene group is 5.

[0026] "Aryl or aromatic group" means an aromatic hydrocarbon group derived by removing one hydrogen atom from an aromatic ring compound, and can be a monocyclic aryl group, or a fused ring aryl group, or a polycyclic aryl group, and at least one of the rings is an aromatic ring system. For example, "substituted or unsubstituted aryl group having 6 to 40 ring atoms" means an aryl group having 6 to 40 ring atoms, preferably a substituted or unsubstituted aryl group having 6 to 30 ring atoms, more preferably a substituted or unsubstituted aryl group having 6 to 18 ring atoms, particularly preferably a substituted or unsubstituted aryl group having 6 to 14 ring atoms, and the aryl group is optionally further substituted; suitable examples include, but are not limited to, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, an anthryl group, a phenanthryl group, a fluoranthenyl group, a triphenylene group, a pyrenyl group, a perylenyl group, a tetracenyl group, a fluorenyl group, a rylenyl group, and derivatives thereof. It is understood that a plurality of aryl groups can also be interrupted by short non-aromatic units (e.g., <10% non-H atoms such as C, N, or O atoms), specifically, such as acenaphthene, fluorene, or 9,9-diaromatic fluorene, triarylamine, diaryl ether systems should also be included in the definition of aryl groups.

[0027] "Heteroaryl or heteroaromatic group" means that at least one carbon atom of an aryl group is replaced by a non-carbon atom, which can be an N atom, an O atom, an S atom, etc. For example, "substituted or unsubstituted heteroaryl group having 5 to 40 ring atoms" means a heteroaryl group having 5 to 40 ring atoms, preferably a substituted or unsubstituted heteroaryl group having 6 to 30 ring atoms, more preferably a substituted or unsubstituted heteroaryl group having 6 to 18 ring atoms, particularly preferably a substituted or unsubstituted heteroaryl group having 6 to 14 ring atoms, and the heteroaryl group is optionally further substituted, and suitable examples include, but are not limited to, thienyl, furanyl, pyrrolyl, imidazolyl, triazolyl, imidazolyl, diazolyl, triazolyl, pyridyl, bipyridyl, pyrimidyl, triazinyl, triazolyl, acridinyl, pyridazinyl, pyrazinyl, quinolinyl, quinazolinyl, quinoxalinyl, phthalazinyl, pyridopyrimidinyl, pyridopyrazinyl, pyrazinopyrazinyl, isoquinolinyl, indolyl, carbazolyl, benzothienyl, benzofuranyl, indolyl, carbazolyl, pyrroloimidazolyl, pyrrolopyrrolyl, thienopyrrolyl, thienothienyl, furanopyrrolyl, furanofuranyl, thienofuranyl, benzisoxazolyl, benzisothiazolyl, benzimidazolyl, quinolinyl, isoquinolinyl, perylenyl, quinoxalinyl, phenanthridinyl, berberinyl, quinazolinyl, quinazolinonyl, dibenzothienyl, dibenzofuranyl, carbazolyl, and derivatives thereof.

[0028] In the present application, "alkyl" can mean straight chain, branched alkyl. The number of carbons of alkyl can be 1 to 50, 1 to 30, 1 to 20, 1 to 10, or 1 to 6. Phrases containing this term, for example, "C1-9 alkyl" means alkyl groups containing from 1 to 9 carbon atoms, each occurrence of which can independently of the other occurrences be C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, C5 alkyl, C6 alkyl, C7 alkyl, C8 alkyl, or C9 alkyl. Non-limiting examples of alkyl groups include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, t-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, t-pentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, n-heptyl, 1-methylheptyl, 2,2-dimethylheptyl, 2-ethylheptyl, 2-butylheptyl, n-octyl, t-octyl, 2-ethyloctyl, 2-butyloctyl, 2-hexyloctyl, 3,7-dimethyloctyl, n-nonyl, n-decyl, adamantyl, 2-ethyidecyl, 2-butyidecyl, 2-hexyidecyl, 2-octyidecyl, n-undecyl, n-dodecyl, 2-ethyldodecyl, 2-butyldodecyl, 2-hexyldodecyl, 2-octyldodecyl, n-tridecyl, n-tetradecyl, n-pentadecyl, n-hexadecyl, 2-ethyihexadecyl, 2-butyihexadecyl, 2-hexyihexadecyl, 2-octyihexadecyl, n-heptadecyl, n-octadecyl, n-nonadecyl, n-eicosyl, 2-ethyieicosyl, 2-butyieicosyl, 2-hexyieicosyl, 2-octyieicosyl, n- heneicosyl, n-docosyl, n-tricosyl, n-tetracosyl, n-pentacosyl, n-hexacosyl, n-heptacosyl, n-octacosyl, n-nonacosyl, n-triacontyl, adamantyl, and the like.

[0029] In the present application, "alkoxy" means a group of structure "-O-alkyl", i.e., an alkyl group as defined above attached to another group through an oxygen atom. Suitable examples of phrases containing this term include, but are not limited to: methoxy (-O-CH3 or -OMe), ethoxy (-O-CH2CH3 or -OEt), and t-butoxy (-O-C(CH3)3 or -OTBu).

[0030] The host material in the light-emitting layer of an organic light-emitting diode (OLED) is usually composed of three materials, i.e., an electron donor material (EDM), an electron acceptor material (EAM), and a light-emitting dopant material (Dopant). In the light-emitting process, an exciplex is formed by the combination of the EDM and the EAM, energy is transferred to the Dopant, and then the Dopant emits light. However, in the energy transfer process, the exciplex has a high yield and a high concentration, and thus there is a phenomenon that energy cannot be completely and efficiently transferred in time, which may cause serious TTA (triplet-triplet annihilation upconversion) and TPQ (triplet-polaron annihilation), and the serious TTA and TPQ greatly reduce the performance of the device, such as the service life.

[0031] The technical solution of the present application is as follows: In a first aspect, an embodiment of the present application provides a composition comprising a host material and a guest material, the host material comprising an electron donor material (EDM), a first electron acceptor material (EAM), and an exciton modulation-mixing material (EMOM), the exciton modulation-mixing material comprising n second electron acceptor materials, wherein n is an integer greater than 0.

[0032] In some embodiments, n is any integer from 1 to 50, such as any integer from 1 to 40, any integer from 1 to 30, any integer from 1 to 20, any integer from 1 to 10, any integer from 1 to 5, etc. In at least some embodiments, n is any integer from 1 to 15.

[0033] For the electron donor material EDM, the highest occupied molecular orbital (HOMO) energy is E HOMO (D), and the lowest unoccupied molecular orbital (LUMO) energy is E LUMO (D); for the first electron acceptor material EAM, the highest occupied molecular orbital (HOMO) energy is E HOMO (A), and the lowest unoccupied molecular orbital (LUMO) energy is E LUMO (A); for the exciton modulation-mixing material EMOM (i.e., the second electron acceptor material), the highest occupied molecular orbital (HOMO) energy is E HOMO (O), and the lowest unoccupied molecular orbital (LUMO) energy is E LUMO (O).

[0034] The n second electron acceptor materials comprise a first electron acceptor material a1 to a second electron acceptor material a nIn some embodiments, n = 1, the LUMO energy level of the first electron acceptor material > the LUMO energy level of the second electron acceptor material a1, i.e., in other words, when n = 1, E LUMO (A) > E LUMO (O, a1). In other embodiments, n > 2, the LUMO energy level of the first electron acceptor material > the LUMO energy level of the second electron acceptor material a1, and the LUMO energy level of the second electron acceptor material a2 > the LUMO energy level of the second electron acceptor material a1, and so on. x-1 , and the LUMO energy level of the second electron acceptor material a2 > the LUMO energy level of the second electron acceptor material a1, and so on. x , wherein x is any integer from 2 to n, i.e., E LUMO (A) > E LUMO (O, a1) > E LUMO (O, a2) > ··· > E LUMO (O, an). Wherein E LUMO (O, a n ) is the LUMO energy level of the nth electron acceptor material a n .

[0035] In some embodiments, the LUMO energy level of the electron donor material is greater than the LUMO energy level of the first electron acceptor material.

[0036] In some embodiments, the absolute value of the difference between the LUMO energy level of the electron donor material and the LUMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV, i.e., |E LUMO (D) - E LUMO (A) | > 0.25 eV. In at least some embodiments, the absolute value of the difference between the LUMO energy level of the electron donor material and the LUMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV and less than or equal to 1 eV.

[0037] In some embodiments, the HOMO energy level of the electron donor material is greater than the HOMO energy level of the first electron acceptor material.

[0038] In some embodiments, the HOMO energy level of the electron donor material is greater than the HOMO energy level of each of the second electron acceptor materials.

[0039] In some embodiments, the absolute value of the difference between the HOMO energy level of the electron donor material and the HOMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV, i.e., |E HOMO (D) - E HOMO (A) | > 0.25 eV. In at least some embodiments, the absolute value of the difference between the HOMO energy level of the electron donor material and the HOMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV and less than or equal to 1 eV.

[0040] The energy levels of the electron donor material, the energy levels of the electron acceptor material, and the energy levels of the second electron acceptor material satisfy the above conditions, which is more advantageous for efficiently generating a sufficient amount of an exciplex.

[0041] When n≥2, the LUMO energy levels of the first electron acceptor material, the second electron acceptor material a1, and the second electron acceptor material a2 are sequentially decreased in gradient. In other words, the absolute value of the difference between the LUMO energy level of the first electron acceptor material and the LUMO energy level of the second electron acceptor material a1 is different from the absolute value of the difference between the LUMO energy level of the second electron acceptor material a1 and the LUMO energy level of the second electron acceptor material a2. n In other words, the absolute value of the difference between the LUMO energy level of the first electron acceptor material and the LUMO energy level of the second electron acceptor material a1 is different from the absolute value of the difference between the LUMO energy level of the second electron acceptor material a1 and the LUMO energy level of the second electron acceptor material a2. x-1 In other words, the absolute value of the difference between the LUMO energy level of the first electron acceptor material and the LUMO energy level of the second electron acceptor material a1 is different from the absolute value of the difference between the LUMO energy level of the second electron acceptor material a1 and the LUMO energy level of the second electron acceptor material a2. x In other words, the absolute value of the difference between the LUMO energy level of the first electron acceptor material and the LUMO energy level of the second electron acceptor material a1 is different from the absolute value of the difference between the LUMO energy level of the second electron acceptor material a1 and the LUMO energy level of the second electron acceptor material a2.

[0042] The absolute value of the difference between the LUMO energy levels of the first electron acceptor material and the second electron acceptor material whose LUMO energy level is closest to the LUMO energy level, and the absolute value of the difference between the LUMO energy levels of the two second electron acceptor materials whose LUMO energy levels are closest to the LUMO energy level each independently range from 0.01 eV to 0.5 eV, for example, 0.01 eV, 0.05 eV, 0.08 eV, 0.1 eV, 0.15 eV, 0.2 eV, 0.25 eV, 0.3 eV, 0.35 eV, 0.4 eV, 0.45 eV, 0.5 eV, and the like. In other words, the LUMO energy levels of the first electron acceptor material, the second electron acceptor material a1, and the second electron acceptor material a2 sequentially decrease in gradient, and the absolute value of the gradient ranges from 0.01 eV to 0.5 eV, for example, 0.01 eV, 0.05 eV, 0.08 eV, 0.1 eV, 0.15 eV, 0.2 eV, 0.25 eV, 0.3 eV, 0.35 eV, 0.4 eV, 0.45 eV, 0.5 eV, and the like. In other words, the absolute value of the difference between the LUMO energy level of the first electron acceptor material and the LUMO energy level of the second electron acceptor material a1 ranges from 0.01 eV to 0.5 eV, and the absolute value of the difference between the LUMO energy level of the second electron acceptor material a1 and the LUMO energy level of the second electron acceptor material a2 ranges from 0.01 eV to 0.5 eV. n In other words, the absolute value of the difference between the LUMO energy level of the first electron acceptor material and the LUMO energy level of the second electron acceptor material a1 is different from the absolute value of the difference between the LUMO energy level of the second electron acceptor material a1 and the LUMO energy level of the second electron acceptor material a2. x-1 In other words, the absolute value of the difference between the LUMO energy level of the first electron acceptor material and the LUMO energy level of the second electron acceptor material a1 is different from the absolute value of the difference between the LUMO energy level of the second electron acceptor material a1 and the LUMO energy level of the second electron acceptor material a2. x In other words, the absolute value of the difference between the LUMO energy level of the first electron acceptor material and the LUMO energy level of the second electron acceptor material a1 is different from the absolute value of the difference between the LUMO energy level of the second electron acceptor material a1 and the LUMO energy level of the second electron acceptor material a2. In some embodiments, the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of the first electron acceptor material is greater than the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of each of the second electron acceptor materials, in other words, |E HOMO(D) - E LUMO (A) | > | E HOMO (D) - E LUMO (O) |.

[0043] n≥2, the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of the first electron acceptor material and the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of each of the second electron acceptor materials gradually decrease; in other words, the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of the first electron acceptor material > the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of the second electron acceptor material a1, and the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of the second electron acceptor material a y-1 > the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of the second electron acceptor material a y , where y is any integer from 2 to n; in other words, | E HOMO (D) - E LUMO (A) | > | E HOMO (D) - E LUMO (O, a1) | > | E HOMO (D) - E LUMO (O, a2) | > ··· > | E HOMO (D) - E LUMO (O, a n ) |.

[0044] The triplet energy level of the first exciplex generated by the electron donor material and the first electron acceptor material is greater than the triplet energy level of the second exciplex generated by the electron donor material and each of the second electron acceptor materials, respectively. It can be understood that the triplet energy level of the first exciplex refers to the lowest excited triplet energy level of the first exciplex, and the triplet energy level of the second exciplex refers to the lowest excited triplet energy level of the second exciplex.

[0045] n≥2, the triplet energy level of the first exciplex generated by the electron donor material and the first electron acceptor material and the energy of the second exciplex generated by the electron donor material and each of the second electron acceptor materials gradually decrease; in other words, the triplet energy level of the first exciplex generated by the electron donor material and the first electron acceptor material > the triplet energy level of the second exciplex generated by the electron donor material and the second electron acceptor material a1, and the triplet energy level of the second exciplex generated by the electron donor material and the second electron acceptor material a z-1 > the triplet energy level of the second exciplex generated by the electron donor material and the second electron acceptor material az a second exciplex generated by the electron donor material and the second electron acceptor material ai, a second exciplex generated by the electron donor material and the second electron acceptor material a2, and so on, wherein z is any integer from 2 to n.

[0046] As an example, in some embodiments, the triplet energy level of a first exciplex that can be generated between the electron donor material and the first electron acceptor material is E (exciplex), the triplet energy level of a second exciplex that can be generated between the electron donor material and the second electron acceptor material ai is Ei (exciplexi), the triplet energy level of a second exciplex that can be generated between the electron donor material and the second electron acceptor material a2 is E2 (exciplex2), and so on, the triplet energy level of a second exciplex that can be generated between the electron donor material and the second electron acceptor material ai is E (exciplex), the triplet energy level of a second exciplex that can be generated between the electron donor material and the second electron acceptor material a2 is E2 (exciplex2), and so on. n n n The triplet energy level of the first exciplex and the triplet energy level of the second exciplex satisfy: E > Ei > E2 > ··· > E n Thus, in the energy transfer, the energy of E is transferred to the guest material, while part of the energy of E is not transferred to the guest material. In the presence of Ei with a lower triplet energy level than E, the part of the energy of E that is not transferred to the guest material is transferred to Ei. In the presence of E2 with a lower triplet energy level than Ei, the part of the energy of Ei that is not transferred to the guest material is transferred to E2. In this way, on the one hand, the energy loss that is not transferred to the guest material can be effectively reduced, the accumulation of energy in a large area can be avoided, and thus the service life of the light-emitting device prepared from the composition can be effectively improved. On the other hand, the charge balance can be effectively promoted, and thus the service life of the light-emitting device prepared from the composition can be improved.

[0047] ​​In some embodiments, the single state energy level and the triplet state energy level of at least one of the first electron acceptor material and the n second electron acceptor materials satisfy the condition |T1-S1|≤0.5 eV, where T1 is the triplet state energy level, i.e. the lowest excited triplet state energy level, and S1 is the single state energy level, i.e. the lowest excited single state energy level. In this way, on the one hand, in the process of exciton transfer, the first electron acceptor material and / or the second electron acceptor material satisfying the condition is more likely to form an exciplex with the electron donor material, which is more conducive to the formation of a multi-exciton channel (a multiple exciplex energy channel), thereby effectively reducing the energy loss that is not transferred to the guest material, avoiding large-area energy accumulation, and effectively promoting charge balance, thereby more effectively improving the service life of the light-emitting device prepared from the composition. On the other hand, the first electron acceptor material and / or the second electron acceptor material satisfying the condition has a similar effect to energy recovery and retransfer in the entire energy transfer process. Since the difference between S1 and T1 is small, a part of the energy that cannot be directly transferred to the guest material can be quickly transferred to the first electron acceptor material and / or the second electron acceptor material satisfying the condition, and then the energy is transferred to the guest material, thereby establishing a more effective additional multi-exciton transport channel, avoiding energy accumulation, thereby avoiding quenching, and improving the service life of the light-emitting device prepared from the composition.

[0048] The composition described in the present application has a gradually decreasing trend in the distribution of the LUMO energy level of the electron donor material, the LUMO energy level of the first electron acceptor material, and the LUMO energy level of the second electron acceptor material after adding the EMOM material. There is a multi-exciton channel in the composition, and there is a gradient transfer of exciton energy. In this way, the carriers need to overcome different barriers after injection to finally reach the guest material. Similar to the formation of an exciplex by EDM and EAM under the action of carriers, the energy is first temporarily stored in the EMOM and then transferred to the light-emitting guest material. This can avoid the phenomenon that the energy cannot be efficiently transferred in time due to the direct transfer of the exciplex to the guest material, thereby effectively improving the service life and other properties of the device.

[0049] Further, for carrier injection, a single host material requires carriers to overcome the barrier between the transport layer and the light-emitting layer, and a large number of carriers will be injected into the light-emitting layer relatively quickly and smoothly. Therefore, there is a certain difficulty in adjusting the carrier balance. The introduction of EMOM and the original LUMO of EDM or EAM presents a ladder arrangement. Carriers need to overcome different barriers after injection to finally reach the light-emitting layer, which slightly reduces the transfer rate. This improvement greatly relieves the device balance adjustment, increases the operation window, and thus reduces the performance degradation of the device to prolong the service life of the device.

[0050] It should be noted that in the present application, the operation window is enlarged, that is, in the conventional level balance adjustment of the light-emitting device, the injection of holes or electrons to the light-emitting layer is increased / decreased, but the light-emitting devices of different colors of red, green and blue have different requirements for the electrical balance, and directly adjusting the injection of electrons / holes to the light-emitting layer is a unified structure to adjust together, which leads to the need to make a choice and cannot be well balanced. In the present application, the adjustment of charge balance in the light-emitting layer can improve the balance choice.

[0051] In some embodiments, the triplet energy level of the electron donor material, the first electron acceptor material, and the exciton-modulating hybrid material are all higher than the triplet energy level of the guest material. In other words, the triplet energy level of the electron donor material > the triplet energy level of the guest material, the triplet energy level of the first electron acceptor material > the triplet energy level of the guest material, and the triplet energy level of the exciton-modulating hybrid material > the triplet energy level of the guest material.

[0052] In some embodiments, the content of the host material in the composition is 80 wt% to 98 wt%, for example, 80 wt%, 82 wt%, 83 wt%, 85 wt%, 86 wt%, 88 wt%, 90 wt%, 92 wt%, 93 wt%, 95 wt%, 96 wt%, 98 wt%, and a value or range between any two of the above values or the like; the content of the guest material is 2 wt% to 20 wt%, for example, 2 wt%, 3 wt%, 5 wt%, 6 wt%, 8 wt%, 10 wt%, 12 wt%, 13 wt%, 15 wt%, 16 wt%, 18 wt%, 20 wt%, and a value or range between any two of the above values or the like.

[0053] In some embodiments, the total content of the electron donor material and the first electron acceptor material in the host material is 20 wt% to 98 wt%, for example, 20 wt%, 30 wt%, 40 wt%, 50 wt%, 60 wt%, 70 wt%, 80 wt%, 90 wt%, 95 wt%, 98 wt%, and a value or range between any two of the above values or the like; the content of the exciton-modulating hybrid material is 2 wt% to 80 wt%, for example, 2 wt%, 5 wt%, 10 wt%, 20 wt%, 30 wt%, 40 wt%, 50 wt%, 60 wt%, 70 wt%, 80 wt%, and a value or range between any two of the above values or the like.

[0054] In some embodiments, the mass ratio of the electron donor material to the first electron acceptor material is x:y, where 0

[0055] In some embodiments, the electron donor material is a compound represented by Formula (I):

[0056] (I) wherein each of m' and n' is independently selected from any integer from 1 to 4; L is selected from a single bond, a substituted or unsubstituted arylene group having a carbon number of 6 to 60, a substituted or unsubstituted heteroarylene group having a carbon number of 3 to 60, or any combination thereof; at least one of R, m' of R', and n' of R" is a hole transport unit, and the rest of each occurrence is independently selected from a substituted or unsubstituted aryl group having a carbon number of 6 to 60, a substituted or unsubstituted heteroaryl group having a carbon number of 3 to 60, or any combination thereof; at least one of R, m' of R', and n' of R" comprises a substituted or unsubstituted carbazolyl group; each of the substituted substituent groups in L, R, R', and R" of each occurrence is independently selected from D, -F, -Cl, -Br, -I, a hydroxyl group, a mercapto group, a carboxyl group, a nitro group, an amino group, a sulfonic acid group, a silyl group, a C1-C 20 alkyl group, a C1-C 20 alkoxy group, a C1-C 20 alkylthio group, an aryl group having a ring atom number of 6 to 60, an aryloxy group having a ring atom number of 6 to 60, an arylthio group having a ring atom number of 6 to 60, or any combination thereof.

[0057] In some embodiments, L is selected from a single bond, a substituted or unsubstituted arylene group having a carbon number of 6 to 30, a substituted or unsubstituted heteroarylene group having a carbon number of 3 to 30, or any combination thereof.

[0058] In some embodiments, at least one of R, m' of R', and n' of R" is a hole transport unit, and the rest of each occurrence is independently selected from a substituted or unsubstituted aryl group having a carbon number of 6 to 30, a substituted or unsubstituted heteroaryl group having a carbon number of 3 to 30, or any combination thereof.

[0059] In some embodiments, each occurrence of the substituent of the substituent of L, R, R', R" is independently selected from the group consisting of D, -F, -Cl, -Br, -I, hydroxyl, thiol, carboxyl, nitro, amino, sulfonic acid, silyl, C1-C5 alkyl, C1-C5 alkoxy, C1-C5 alkylthio, aryl having 6 to 30 ring atoms, aryloxy having 6 to 30 ring atoms, arylthio having 6 to 30 ring atoms, or any combination thereof. 10 C1-C5 alkyl, C1-C5 alkoxy, C1-C5 alkylthio, aryl having 6 to 15 ring atoms, aryloxy having 6 to 15 ring atoms, arylthio having 6 to 15 ring atoms, or any combination thereof. 10 C1-C5 alkyl, C1-C5 alkoxy, C1-C5 alkylthio, aryl having 6 to 15 ring atoms, aryloxy having 6 to 15 ring atoms, arylthio having 6 to 15 ring atoms, or any combination thereof. 10 C1-C5 alkyl, C1-C5 alkoxy, C1-C5 alkylthio, aryl having 6 to 15 ring atoms, aryloxy having 6 to 15 ring atoms, arylthio having 6 to 15 ring atoms, or any combination thereof.

[0060] Further, in some embodiments, each occurrence of the substituent of the substituent of L, R, R', R" is independently selected from the group consisting of D, -F, -Cl, -Br, -I, hydroxyl, thiol, carboxyl, nitro, amino, sulfonic acid, silyl, C1-C5 alkyl, C1-C5 alkoxy, C1-C5 alkylthio, aryl having 6 to 15 ring atoms, aryloxy having 6 to 15 ring atoms, arylthio having 6 to 15 ring atoms, or any combination thereof.

[0061] In some embodiments, the hole transport unit is selected from one or more of the following structures:

[0062] wherein Ar 11 is selected from substituted or unsubstituted aromatic group having 6 to 40 carbon atoms, or substituted or unsubstituted heteroaromatic group having 3 to 40 carbon atoms, or any combination thereof; Y1, Y2are independently selected from single bond, N(R3), C(R3R4), Si(R3R4), O, S, C=N(R3), C=C(R3R4), or P(R3); R1, R2, R3, R4are independently selected from substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, substituted or unsubstituted aromatic group having 6 to 60 ring atoms, substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms, or any combination thereof.

[0063] It is noted that any available linking site in the above groups can serve as a linking site.

[0064] As an example, in some embodiments, the electron donor material comprises at least one of the compounds shown in the following structural formulae:

[0065]

[0066]

[0067]

[0068]

[0069]

[0070]

[0071] .

[0072] In some embodiments, the second electron acceptor material has a structure represented by Formula (II):

[0073] (II) wherein m0, n0 are each independently selected from an integer from 1 to 4; X and Y are each independently selected from one of N, O, S, at least one of X and Y being N; L1, L2, L3 are each independently selected at each occurrence from a single bond, a substituted or unsubstituted arylene group having a carbon number of 6 to 60, a substituted or unsubstituted heteroarylene group having a carbon number of 3 to 60, or any combination thereof; R a , m0 R b , n0 R c , at least one of which is a first electron transport unit, and the rest of which are each independently selected at each occurrence from a substituted or unsubstituted aryl group having a carbon number of 6 to 60, a substituted or unsubstituted heteroaryl group having a carbon number of 3 to 60, or any combination thereof; L1, L2, L3, R a , R b , R c , the substituents of the substitution are each independently selected at each occurrence from D, -F, -Cl, -Br, -I, a hydroxyl group, a thiol group, a carboxyl group, a nitro group, an amino group, a sulfonic acid group, a silyl group, a C1-C20 alkyl group, a C1-C20 alkoxy group, a C1-C20 alkylthio group, an aryl group having a ring atom number of 6 to 60, an aryloxy group having a ring atom number of 6 to 60, an arylthio group having a ring atom number of 6 to 60, or any combination thereof. 20 20 20

[0074] In some embodiments, m0, n0 are each independently selected from an integer from 1 to 2.

[0075] ​​​In some embodiments, L1, L2, and L3 are each independently selected from single bonds, substituted or unsubstituted aromatic groups having 6 to 30 carbon atoms, substituted or unsubstituted heteroaromatic groups having 3 to 30 carbon atoms, or any combination of these groups.

[0076] In some embodiments, R a m0 R b n0 R c In this configuration, at least one is a first electron transport unit, and each of the remaining units is independently selected from an aromatic group having 6 to 30 substituted or unsubstituted carbon atoms, a heteroaromatic group having 3 to 30 substituted or unsubstituted carbon atoms, or any combination of these groups.

[0077] In some embodiments, L1, L2, L3, R a R b R c Each substituent mentioned herein is independently selected from D, -F, -Cl, -Br, -I, hydroxyl, mercapto, carboxyl, nitro, amino, sulfonic acid, silyl, C1~C1. 10 Alkyl, C1~C 10 Alkoxy, C1~C 10 Alkyl thioyl, aryl with 6 to 30 ring atoms, aryloxy with 6 to 30 ring atoms, arylthioyl with 6 to 30 ring atoms, or any combination of these groups.

[0078] Furthermore, in some embodiments, L1, L2, L3, R a R b R c Each substituent mentioned herein is independently selected from D, -F, -Cl, -Br, -I, hydroxyl, mercapto, carboxyl, nitro, amino, sulfonic acid, silyl, C1-C5 alkyl, C1-C5 alkoxy, C1-C5 alkylthio, aryl with 6 to 15 ring atoms, aryloxy with 6 to 15 ring atoms, arylthio with 6 to 15 ring atoms, or any combination of these groups.

[0079] In some embodiments, the first electron transport unit is selected from F, cyano, or one or more of the following groups:

[0080] Where a1 is 1, 2 or 3; X 1 To X 8 Each is independently selected from CR7 or N, and at least one of them is N; M 1 M 2 M 3each independently N(R7), C(R7R8), Si(R7R8), O, C=N(R7), C=C(R7R8), P(R7), P(=O)R7, S, S=O, SO2, or nothing; R5, R6, R7, R8are each independently selected from the group consisting of a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms, or any combination of these groups.

[0081] In some embodiments, the first electron transport unit is selected from the group consisting of one or more of the following groups:

[0082] wherein X' is each occurrence independently selected from C, N, O, or S, and at least one X' in each group is N.

[0083] In some embodiments, the first electron acceptor material has a compound represented by Formula (III):

[0084] (III) wherein m1 is selected from an integer from 1 to 6; A is a second electron transport unit; Ar2is selected from a substituted or unsubstituted aromatic group having 6 to 60 carbon atoms, a substituted or unsubstituted heteroaromatic group having 3 to 60 carbon atoms, or any combination of these groups.

[0085] In some embodiments, the second electron transport unit is selected from F, a cyano group, or one or more of the following groups:

[0086] wherein b1 is 1, 2, or 3; Y 1 to Y 8 each independently selected from CR 11 or N, and at least one is N; N 1 , N 2 , N 3 each independently N(R 11 ), C(R 11 R 12 ), Si(R 11 R 12 ), O, C=N(R 11 ), C=C(R11 R 12 ), P(R 11 ), P(=O) R 11 , S, S=O, SO2 or nothing; R9, R 10 , R 11 , R 12 are each independently selected from the group consisting of a substituted or unsubstituted alkyl group having a carbon number of 1 to 30, a substituted or unsubstituted alkoxy group having a carbon number of 1 to 30, a substituted or unsubstituted cycloalkyl group having a carbon number of 3 to 30, a substituted or unsubstituted aromatic group having a ring atom number of 6 to 60, a substituted or unsubstituted heteroaromatic group having a ring atom number of 5 to 60, or any combination thereof.

[0087] It is to be noted that "nothing" means that there is no such group, and the benzene rings are not connected.

[0088] In at least some embodiments, the second electron transport unit is selected from a combination of one or more of the following groups:

[0089] wherein X" is independently selected at each occurrence from C, N, O or S, and at least one X" in each group is N.

[0090] It is to be noted that any connectable site in the above groups can be used as a connecting site.

[0091] As an example, in some embodiments, the first electron acceptor material includes at least one of the compounds shown in the following structural formulas:

[0092]

[0093]

[0094]

[0095]

[0096]

[0097]

[0098]

[0099]

[0100] .

[0101] In some embodiments, the second electron acceptor material comprises at least one of the compounds shown in the following structural formulae:

[0102]

[0103]

[0104] .

[0105] The guest material is selected from one or more of a phosphorescent light emitting guest material (PGD), a fluorescent light emitting guest material, a narrow-spectrum thermally activated delayed fluorescence (TADF) light emitting guest material (FGD).

[0106] The phosphorescent light emitting guest material can be selected from, but not limited to, one or more of an iridium-containing phosphorescent light emitting guest material, a platinum-containing phosphorescent light emitting guest material, as an example, in some embodiments, the iridium-containing phosphorescent light emitting guest material can be selected from, but not limited to, one or more of Ir(ppy)3 (tris[2-phenylpyridine]iridium(III)), Ir(mppy)3 (tris[2-(p-tolyl)pyridine]iridium(III), CAS: 149005-33-4), Ir(ppy)2acac (acetylacetonate di(2-phenylpyridine)iridium), and Firpic (bis(4,6-difluorophenylpyridinato-N,C2)picolinate iridium).

[0107] The fluorescent light emitting guest material can be selected from, but not limited to, one or more of 5,12-dimethylquinacridone (DMQA), 8-hydroxyquinoline aluminum (Alq3), 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljuglavinyl-4- ethylene)-4H-pyrane (DCJTB), red dye 3-(dicyanomethylene)-5,5-dimethyl-1-(4- dimethylamino-styryl)cyclohexene (DCDDC), red dye 2-[2-isopropyl-6-[2-(2,3,6,7- tetrahydro-1,1,7,7-tetramethyl-1H,5H-benzo[ij]quinolizin-9-yl)vinyl]-4H-pyrane-4- ylidene]propanedinitrile (DCJTI).

[0108] The narrow-spectrum heat-activated delayed fluorescence guest material can be one or more of IDID2BN (ref doi.org / 10.1002 / anie.202313254), 10-(2,12-di-tert-butyl-5,9-dioxa-13b-boronaphtho[3,2,1-de]anthracen-7-yl)-9,9-dimethyl-9,10-dihydroacridine (abbreviated as TDBA-Ac), 5-(2,12-di-tert-butyl-5,9-dioxa-13b-boronaphtho[3,2,1de]anthracen-7-yl)-10,15-diphenyl-10,15-dihydro-5H diindolo[3,2-a:3',2'-c]carbazole (abbreviated as TDBA-DI), 9'-(2,12-di-tert-butyl-5,9-dioxa-13b-boronaphtho-[3,2,1de]anthracen-7-yl)-9,9'-diphenyl-9H,9'H,9'-H-3,3':6',3'-dicarbazole (abbreviated as TB-P3Cz), 10,10'-(4,4'-sulfonylbis(4,1-phenylene))bis(9,9-dimethyl-9,10-dihydroacridine) (abbreviated as DMAC-DPS), 9'-[4-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-3,3",6,6'-tetraphenyl-9,3':6',9'-tert-9H-carbazole (abbreviated as BDPCC-TPTA), (9'-(2,12-di-tert-butyl-5,9-dioxa-13b-boronaphtho[3,2,1-de]anthracen-7-yl)-9'H-9,3':6',9'-dicarbazole (abbreviated as TB-3Cz), 5-(3,11-dimethyl-5,9-dioxa-13b-boronaphtho[3,2,1-de]anthracen-7-yl)-10,15-diphenyl-10,15-dihydro-5H-diindolo[3,2-a:3',2'-c]carbazole (abbreviated as mMDBA-DI), 3,11-bis(1,3,6,8-tetramethyl-9H-carbazol-9-yl)-5,9-dioxa-13b-boronaphtho[3,2,1-de]anthracene (abbreviated as DBA-DTMCz).

[0109] The structural formula of the PGD (Ir(mppy)3) and FGD (IDID2BN) is as follows: ,

[0110] Ir(mppy)3, IDID2BN In a second aspect, the embodiments of the present application also provide a mixture comprising a solvent and the composition described above.

[0111] The composition can be present in the mixture in an amount of 0.3 to 30 wt%, for example, 0.3 wt%, 1 wt%, 3 wt%, 5 wt%, 6 wt%, 8 wt%, 10 wt%, 13 wt%, 15 wt%, 18 wt%, 20 wt%, 22 wt%, 25 wt%, 26 wt%, 28 wt%, 30 wt%, and any value or range of values between any two of these values, or the like. Within this concentration range, the mixture can have a good film forming effect.

[0112] The solvent can include, but is not limited to, one or more of aromatic or heteroaromatic compounds, aromatic ester compounds, alkane compounds, ether compounds, ketone compounds, amine compounds.

[0113] The aromatic or heteroaromatic compound can include, but is not limited to, one or more of diisopropylbenzene, amylbenzene, tetralin, cyclohexylbenzene, chloronaphthalene, 1,4-dimethylnaphthalene, 3-isopropylbiphenyl, p-cymene, dipentylbenzene, tri-pentylbenzene, pentyltoluene, o-diethylbenzene, m-diethylbenzene, p-diethylbenzene, 1,2,3,4-tetramethylbenzene, 1,2,3,5-tetramethylbenzene, 1,2,4,5-tetramethylbenzene, butylbenzene, dodecylbenzene, dihexylbenzene, dibutylbenzene, p-diisopropylbenzene, cyclohexylbenzene, benzylbutylbenzene, dimethylnaphthalene, 3-isopropylbiphenyl, p-cymene, 1-methylnaphthalene, 1,2,4-trichlorobenzene, 4,4-difluorodiphenylmethane, 1,2-dimethoxy-4-(1-propenyl)benzene, diphenylmethane, 2-phenylpyridine, 3-phenylpyridine, N-methyldiphenylamine, 4-isopropylbiphenyl, α,α-dichlorodiphenylmethane, 4-(3-phenylpropyl)pyridine, 1,1-bis(3,4-dimethylphenyl)ethane, 2-isopropyl naphthalene, quinoline, isoquinoline, methyl 2-furoate, and ethyl 2-furoate.

[0114] The aromatic ester compounds can include, but are not limited to, one or more of ethyl acetate, butyl acetate, amyl acetate, alkyl benzoate, alkyl octanoate, alkyl sebacate, alkyl stearate, alkyl phenylacetic acid ester, alkyl cinnamic acid ester, alkyl oxalic acid ester, alkyl maleic acid ester, alkyl lactone, alkyl oleate (the alkyl group can be methyl, ethyl, propyl, butyl, pentyl, hexyl, dodecyl, heptadecyl, including isomers thereof, and specific examples can be, for example, methyl benzoate, ethyl benzoate, propyl benzoate, butyl benzoate, amyl benzoate, etc.), alkylated alkyl benzoate (the alkylated group can be p-methyl, p-ethyl, p-propyl, p-t-butyl, 3-ethoxy; the alkyl group can be methyl, ethyl, propyl, butyl, pentyl, hexyl, dodecyl, heptadecyl, including isomers thereof; and specific examples can be, for example, methyl p-methylbenzoate, ethyl p-methylbenzoate, butyl p-methylbenzoate, ethyl p-ethylbenzoate, methyl 3-ethoxybenzoate, ethyl p-t-butylbenzoate, etc.).

[0115] The alkane compounds can include, but are not limited to, one or more of n-octane, n-pentane, n-hexane, cyclohexane, phenylcyclohexane, dodecane, decane.

[0116] The ether compounds can include, but are not limited to, one or more of glycidyl phenyl ether, dibenzyl ether, 4-t-butyl anisole, trans-p-propenylanisole, diphenyl ether, 2-phenoxy methyl ether, 2-phenoxy tetrahydrofuran, and ethyl-2-naphthyl ether, pentyl ether, hexyl ether, dioctyl ether, ethylene glycol dibutyl ether, diethylene glycol diethyl ether, diethylene glycol butyl methyl ether, diethylene glycol dibutyl ether, triethylene glycol dimethyl ether, triethylene glycol ethyl methyl ether, triethylene glycol butyl methyl ether, tripropylene glycol dimethyl ether, and tetraethylene glycol dimethyl ether.

[0117] The ketone compounds can include, but are not limited to, one or more of 1-tetralone, 2-tetralone, 2-(phenyloxy)tetralone, 6-(methyloxy)tetralone, phenylacetone, phenylpropyl ketone, benzophenone, and derivatives of the above solvents. Among them, as examples, the derivatives can be selected from, but not limited to, one or more of 4-methylphenylacetone, 3-methylphenylacetone, 2-methylphenylacetone, 4-methylphenylpropyl ketone, 3-methylphenylpropyl ketone, and 2-methylphenylpropyl ketone, 2-nonanone, 3-nonanone, 5-nonanone, 2-decanone, 2,5-hexanedione, 2,6,8-trimethyl-4-nonanone, fenchone, piperitone, isopiperitone, di-n-pentyl ketone, etc.

[0118] The amine compounds can include, but are not limited to, one or more of aniline, dimethylacetamide, ethylenediamine, octadecenylamine, ethanolamine, N,N-dimethylformamide.

[0119] It is understood that when the luminescent ink is a solution or a suspension, the luminescent ink can further include one or more additives including, but not limited to, one or more of a surfactant, a lubricant, a wetting agent, a dispersant, a hydrophobic agent, and a binding agent.

[0120] Further, the luminescent ink can be an ink, and the solvent can be a solvent having a Hansen solubility parameter in the following ranges: δd (dispersion force) in the range of 17.0-23.2 MPa1 / 2, especially in the range of 18.5-21.0 MPa1 / 2; δp (polar force) in the range of 0.2-12.5 MPa1 / 2, especially in the range of 2.0-6.0 MPa1 / 2; δh (hydrogen bonding) in the range of 0.9-14.2 MPa1 / 2, especially in the range of 2.0-6.0 MPa1 / 2.

[0121] The luminescent ink according to the present application, the boiling point parameter of the solvent should be considered when selecting. In some embodiments of the present application, the boiling point of the solvent is not less than 150°C, for example, not less than 180°C, not less than 200°C, not less than 250°C, not less than 275°C, or not less than 300°C, which is beneficial to prevent the problem of "nozzle clogging" of the inkjet printing head, and is beneficial to improve the film forming quality.

[0122] When the luminescent ink is used in a printing process, the viscosity and surface tension of the luminescent ink are important parameters. The surface tension parameter of a suitable luminescent ink is suitable for a specific substrate and a specific printing method. In some embodiments, the luminescent ink according to the embodiments of the present application has a surface tension in the range of 19 dyne / cm to 60 dyne / cm at the working temperature or at 25°C, for example, 22 dyne / cm to 55 dyne / cm, for example, 25 dyne / cm to 40 dyne / cm, for example, 30 dyne / cm to 40 dyne / cm. In some embodiments, the luminescent ink according to the embodiments of the present application has a viscosity in the range of 1 cps to 100 cps at the working temperature or at 25°C, for example, 1 cps to 10 cps, 1 cps to 50 cps, for example, 1.5 cps to 20 cps, for example, 2.0 cps to 15 cps. The luminescent ink thus configured will be beneficial for inkjet printing.

[0123] The application further provides a light-emitting film comprising the composition described above. It is understood that the preparation method of each functional layer in the light-emitting device includes but is not limited to a chemical method and / or a physical method. The chemical method includes but is not limited to one or more of a chemical vapor deposition method, a continuous ion layer adsorption and reaction method, an anodic oxidation method, an electrolytic deposition method, and a coprecipitation method. The physical method includes but is not limited to a physical coating method and a solution method. The physical coating method includes but is not limited to one or more of a thermal evaporation coating method, an electron beam evaporation coating method, a magnetron sputtering method, a multi-arc ion coating method, a physical vapor deposition method, an atomic layer deposition method, and a pulsed laser deposition method. The solution method includes but is not limited to one or more of a spin coating method, a printing method, an inkjet printing method, a blade coating method, a printing method, an immersion pulling method, an immersion method, a spray coating method, a roll coating method, a casting method, a slot coating method, and a strip coating method. After the preparation of each functional layer of the optoelectronic device is completed, a packaging process is required. The packaging process can be machine packaging or manual packaging. In the packaging process, the oxygen content and the water content are both less than 0.1 ppm to ensure the stability of the optoelectronic device. Specifically, the packaging material used to form the packaging layer is selected from one or more of ultraviolet glue, a metal film, and glass glue. For example, the packaging material is an acrylic resin or an epoxy resin.

[0124] In at least one embodiment, the film-forming process is a solution method. The thin film is prepared from the mixture described above by a film-forming process, which can be a spin coating method, a printing method, an inkjet printing method, a blade coating method, a printing method, an immersion pulling method, an immersion method, a spray coating method, a roll coating method, a casting method, a slot coating method, or a strip coating method.

[0125] In a third aspect, referring to Figure 1 The application further provides a light-emitting device 100 comprising an anode 10, a light-emitting layer 20, and a cathode 30. The material of the light-emitting layer 20 comprises the composition described above.

[0126] Referring to Figure 2 In one embodiment, the light-emitting device 100 further comprises a hole transport layer 40 between the anode 10 and the light-emitting layer 20. In other words, the light-emitting device 100 comprises an anode 10, a hole transport layer 40, a light-emitting layer 20, and a cathode 30 stacked in sequence.

[0127] In one embodiment, the light-emitting device 100 further comprises a hole injection layer 50 between the anode 10 and the hole transport layer 40.

[0128] In one embodiment, the light-emitting device 100 further comprises an electron transport layer 60 between the light-emitting layer 20 and the cathode 30.

[0129] In one embodiment, the light-emitting device 100 further comprises an electron injection layer 70 between the electron transport layer 60 and the cathode 30.

[0130] The anode 10 and the cathode 30 are electrodes known in the art for use in light-emitting devices, for example, can independently comprise but are not limited to a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal elemental electrode, or an alloy electrode. The material of the doped metal oxide electrode can comprise but is not limited to one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), zinc-doped indium oxide (IZO), magnesium-doped zinc oxide (MZO), aluminum-doped magnesium oxide (AMO), cadmium-doped zinc oxide. The composite electrode is an electrode formed by laminating two or more layers of conductive materials, for example, AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / APC / ITO, IZO / Ag / IZO, IZO / APC / IZO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc., wherein " / " represents a laminated structure, for example, AZO / Ag / AZO represents a composite electrode comprising an AZO layer, an Ag layer, and an AZO layer laminated in sequence. The material of the metal elemental electrode can comprise but is not limited to one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg, and Ba. The alloy electrode comprises but is not limited to an Au:Mg alloy electrode or an Ag:Mg alloy electrode.

[0131] In some embodiments, the anode is an electrode with a relatively high work function, for example, can comprise but is not limited to a doped metal oxide electrode with a relatively high work function, a metal elemental electrode with a relatively high work function, and a carbon nanotube electrode. The metal elemental electrode with a relatively high work function can be selected from but is not limited to Ni, Pt, Au, Ag, Ir, etc.

[0132] In some embodiments, the cathode is a relatively low work function electrode, for example, can include but is not limited to a relatively low work function elemental metal electrode, a relatively low work function composite electrode, and a relatively low work function alloy electrode. The relatively low work function elemental metal electrode can be Ca, Ba, Al, Mg, etc. The relatively low work function composite electrode can be Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc. The relatively low work function alloy electrode can be Au:Mg and Ag:Mg, etc.

[0133] The material of the hole transport layer 40 can be known in the art for hole transport layers, and also commercially available hole transport materials from commercial companies, for example, can be selected from, but not limited to, NHT-51 (manufactured by Novaled), NDP-9 (manufactured by Novaled), HTM014 (manufactured by Merck), HTM081 (manufactured by Merck), HTM163 (manufactured by Merck), HTM222 (manufactured by Merck), NHT-5 (manufactured by Novaled), NHT-18 (manufactured by Novaled), NHT-49 (manufactured by Novaled), NHT-51 (manufactured by Novaled), EL-301 (manufactured by Hodogaya), EL-22T (manufactured by Hodogaya), 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4''-diamine (a-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-di(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tris(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butyphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and derivatives thereof, N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB), Spiro NPB, poly(phenylenevinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)benzidine] (TAPC), 1,3-bis(carbazol-9-yl)benzene (MCP), polyaniline, polypyrrole, poly(p-phenylenevinylene), aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,one or more of 4'-bis(p-carbazolyl)-l,l '-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles each independently include, but are not limited to, one or more of Mo03, W03, NiO, Cr03, CuO, Cu20, V205, the doping element in the second doped metal oxide particles includes, but is not limited to, one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfides include, but are not limited to, one or more of CuS, MoS3, WS3, the metal selenides include, but are not limited to, one or more of MoSe3, WSe3, and the metal nitrides include, but are not limited to, P-type gallium nitride.

[0134] The material of the hole injection layer 50 can be a material known in the art for a hole injection layer, for example, one or more of a high conductive system organic molecule material, a transition metal oxide, a transition metal sulfide compound; the high conductive system organic molecule material is selected from one or more of NDP-2 (manufactured by Novaled), NDP-9 (manufactured by Novaled), F4-TCNQ, F6-TCNNQ, poly(3,4-ethylenedioxythiophene), poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid (PEDOT:PSS), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, polymeric copper carbonate, free phthalocyanine (H2PC), copper phthalocyanine (CuPc), platinum phthalocyanine (PtPC), titanium oxide phthalocyanine (TiOPC), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), 7,7,8,8-tetracyano-p-quinodimethane (TCNQ), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-di-1-naphthyl-biphenyl-4,4'-diamine (NPB-DPA), N,N'-diphenyl-N,N'-di(4'-(N,N-di(1-naphthyl)-amino)-4-biphenyl)-benzidine (Di-NPB), N,N'-diphenyl-N,N'-di-[4-(N,N-di-p-tolylamino)phenyl]benzidine (NTNPB), N4,N4,N4',N4'-tetra(4-methoxyphenyl)-[1,1'-biphenyl]-4,4'-diamine (MeO-TPD), 4,4',4''-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), 4,4'4''-tris(N,N-diphenylamino)triphenylamine (NATA), N2,N2'-(9,9-dimethyl-9H-fluorene-2,7-diyl)bis(9,9-dimethyl-N2,N7,N7-triphenyl-9H-fluorene-2,7-diamine) (3DMFL-BPA), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane (F4-TCNQ); the transition metal oxide is selected from one or more of NiO, MoO3, WO3, CuO, Cu2O; the transition metal sulfide compound is selected from one or more of MoS2, MoSe2, WS3, WSe3, CuS.

[0135] The material of the electron transport layer 60 is known in the art for electron transport layer, and can also be the electron transport material sold by commercial companies, for example, can be selected from, but not limited to, one or more of inorganic electron transport material and organic electron transport material. The inorganic electron transport material includes one or more of first doped metal oxide particles, first non-doped metal oxide particles, non-metal nitride, IIB-VIA group semiconductor material, IIIA-VA group semiconductor material and IB-IIIA-VIA group semiconductor material, the material of the first non-doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, HfO3, the metal oxide in the first doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, HfO3, Al2O3, the doping element in the first doped metal oxide particles includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Cd, Cs, the non-metal nitride includes Si3N4, the IIB-VIA group semiconductor material includes one or more of ZnS, ZnSe, CdS, the IIIA-VA group semiconductor material includes one or more of InP, GaP, and the IB-IIIA-VIA group semiconductor material includes one or more of CuInS, CuGaS.The organic electron transport material includes one or more of NET-164 (manufactured by Novaled), NDN-87 (manufactured by Novaled), NDN-45 (manufactured by Novaled), NDN-18 (manufactured by Novaled), NDN-218 (manufactured by Novaled), ET093 (manufactured by Idemitsu Kosan), ETM020 (manufactured by Merck), ETM033 (manufactured by Merck), ETM034 (manufactured by Merck), ETM036 (manufactured by Merck), diphenyl[4-(triphenylsilyl)phenyl]phosphine oxide (TSPO1), 1,3,5-tris((3-pyridinyl)-3-phenyl)benzene (TmPyPB), 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD), bis(10-hydroxybenzo[h]quinolinato)beryllium (Bebq2) (CAS: 148896-39-3), 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (TAZ), 2,7-bis(diphenylphosphine oxide)-9,9'-spirobi[fluorene] (SPPO13), 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBI), 4,6-bis(3,5-di(3-pyridyl)phenyl)-2-methylpyrimidine (B3PYMPM), 4,7-diphenyl-1,10-phenanthroline (BPhen), 2-(4'-tert-butylphenyl)-5-(4'-biphenylyl)-1,3,4-oxadiazole, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 4,7-diphenyl-1,10-phenanthroline, bis(2-methyl-8-quinolinolato-N1,O8)-1,1'-biphenyl-4-olato)aluminum, 8-hydroxyquinoline aluminum (Alq3), 8-hydroxyquinoline lithium (Liq), 2,7-bis(diphenylphosphine oxide)-9,9'-spirobi[fluorene], poly[9,9-dioctylfluorene-9,9-bis(N,N-dimethylaminopropyl)fluorene], 9,9-bis[3'-(N,N-dimethylamino)propyl-2,7-fluorene]-alt-2,7-(9,9-dioctylfluorene), 1,3-bis[5-(4-tert-butylphenyl)-2-[1,3,4]oxadiazolyl]benzene (OXD-7), 3',3'",3'""-(1,3,5-triazine-2,4,6-triyl)-tris(([1,1'-biphenyl]-3-carbonitrile)) (CNT2T), 2,4,6-tris[3-(diphenylphosphinyl)phenyl]-1,3,5-triazole (POT2T, CAS: 1646906-26-4).

[0136] The material of the electron injection layer 70 can be a material known in the art for an electron injection layer, for example, can be selected from, but not limited to, one or more of Yb, YF3, Li, LiF, NaF, CsCO3, Cs, KBH4, and KH.

[0137] It can be understood that the light-emitting device 100 can further include some functional layers commonly used in light-emitting devices that help improve the performance of the light-emitting device, such as an electron blocking layer, a hole blocking layer, an interface modification layer, and the like.

[0138] It can be understood that the materials of the layers of the light-emitting device 100 can be adjusted according to the light-emitting requirements of the light-emitting device 100.

[0139] In some embodiments, the light-emitting device 100 further includes a substrate, which is disposed on the side of the anode 10 away from the light-emitting layer 20, or the substrate is disposed on the side of the cathode 30 away from the light-emitting layer 20.

[0140] The substrate can be a rigid substrate or a flexible substrate. In some embodiments, the material of the substrate can include, but is not limited to, one or more of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, and polyethersulfone.

[0141] It can be understood that the light-emitting device 100 can be a normal light-emitting device or an inverted light-emitting device. The light-emitting device 100 can be an organic light-emitting device.

[0142] The light-emitting layer 20 of the light-emitting device 100 includes the composition described in the present application, thereby having a longer service life.

[0143] In a fourth aspect, the present application also relates to a display device, which includes the light-emitting device 100.

[0144] The display device can be any electronic product with display function, including but not limited to a smart phone, a tablet computer, a notebook computer, a digital camera, a digital camcorder, a smart wearable device, a smart weighing electronic scale, a vehicle-mounted display, a television, or an e-book reader, wherein the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) headset, and the like.

[0145] The present application will be described in detail below through specific embodiments. The following embodiments are only part of the embodiments of the present application and are not limiting of the present application. The raw materials used in the following embodiments are commercially available products unless otherwise specified.

[0146] Example 1 IZO / Ag / IZO anode 10 is provided, and the thickness of each layer is 15 nm / 110 nm / 75 nm, respectively; A NHT-51 (Novaled):NDP-9 (Novaled) mixed material is deposited on the anode 10, and is annealed at 150℃ for 20 min to obtain a hole injection layer 50 with a thickness of 50 nm; A NHT-51 (Novaled) material is deposited on the hole injection layer 50, and is annealed at 180℃ for 30 min to obtain a hole transport layer 40 with a thickness of 35 nm; A mixture is deposited on the hole transport layer 40, and is annealed at 140℃ for 20 min to obtain a light-emitting layer 20 with a thickness of 55 nm, wherein the mixture comprises a composition and a solvent toluene, the composition comprises a host material and a guest material, the host material comprises EDM, EAM and EMOM, the guest material comprises Ir(mppy)3 (PGD) and IDID2BN (FGD), wherein EDM is selected from EDM1, EAM is selected from EAM1, and EMOM is selected from EMOM1, the mass concentration of the composition in the mixture is 15%, the mass ratio of the host material to the guest material is 9:1, the mass ratio of EDM to EAM is 5:5, the content of EMOM in the host material is 50 wt%, and the mass ratio of PGD to FGD is 99.5:0.5; The substrate is transferred into a vacuum chamber with a vacuum degree of 9*10 -7 torr, and an ETM036 (Merck) is deposited on the light-emitting layer 20 to obtain an electron transport layer 60 with a thickness of 30 nm; Yb is evaporated on the electron transport layer to obtain an electron injection layer 70 with a thickness of 1 nm; Ag is evaporated on the electron injection layer 70 to obtain a cathode 30 with a thickness of 18 nm; CR163 (Huawu Optoelectronics) is evaporated on the cathode 30 to form a light extraction layer with a thickness of 80 nm, thereby obtaining a light-emitting device 100.

[0147] Example 2 This example is basically the same as Example 1, except that EMOM2 is used to replace EMOM1 in Example 1.

[0148] Example 3 This example is basically the same as Example 1, except that EMOM3 is used to replace EMOM1 in Example 1.

[0149] Example 4 This example is basically the same as Example 1, except that EMOM4 is used to replace EMOM1 in Example 1.

[0150] Example 5 This example is substantially identical to Example 1, except that EMOM5 is used in place of EMOM1 in Example 1.

[0151] Example 6 This example is substantially identical to Example 1, except that EMOM6 is used in place of EMOM1 in Example 1.

[0152] Example 7 This example is substantially identical to Example 1, except that EMOM7 is used in place of EMOM1 in Example 1.

[0153] Example 8 This example is substantially identical to Example 1, except that EMOM8 is used in place of EMOM1 in Example 1.

[0154] Example 9 This example is substantially identical to Example 1, except that EMOM9 is used in place of EMOM1 in Example 1.

[0155] Example 10 This example is substantially identical to Example 1, except that EMOM10 is used in place of EMOM1 in Example 1.

[0156] Example 11 This example is substantially identical to Example 1, except that EMOM11 is used in place of EMOM1 in Example 1.

[0157] Example 12 This example is substantially identical to Example 1, except that EMOM12 is used in place of EMOM1 in Example 1.

[0158] Example 13 This example is substantially identical to Example 1, except that EMOM13 is used in place of EMOM1 in Example 1.

[0159] Example 14 This example is substantially identical to Example 1, except that EMOM14 is used in place of EMOM1 in Example 1.

[0160] Example 15 This example is substantially identical to Example 1, except that the exciton-modulating hybrid material of this example includes EMOM1 and EMOM2, and the mass ratio of EMOM1 to EMOM2 is 1:1.

[0161] Example 16 This example is basically the same as Example 1 except that the exciton-modulated mixed material of this example includes EMOM4, EMOM9 and EMOM12, and the mass ratio of EMOM4, EMOM9 and EMOM12 is 1:1:1.

[0162] Example 17 This example is basically the same as Example 1 except that the exciton-modulated mixed material of this example includes EMOM1, EMOM5, EMOM8 and EMOM13, and the mass ratio of EMOM1, EMOM5, EMOM8 and EMOM13 is 1:1:1:1.

[0163] Example 18 This example is basically the same as Example 1 except that the exciton-modulated mixed material of this example includes EMOM1, EMOM6, EMOM8, EMOM10 and EMOM12, and the mass ratio of EMOM1, EMOM6, EMOM8, EMOM10 and EMOM12 is 1:1:1:1:1.

[0164] Example 19 This example is basically the same as Example 1 except that EDM5 is used instead of EDM1 in Example 1.

[0165] Example 20 This example is basically the same as Example 1 except that EDM6 is used instead of EDM1 in Example 1.

[0166] Example 21 This example is basically the same as Example 1 except that EDM13 is used instead of EDM1 in Example 1.

[0167] Example 22 This example is basically the same as Example 1 except that EDM16 is used instead of EDM1 in Example 1.

[0168] Example 23 This example is basically the same as Example 1 except that EDM21 is used instead of EDM1 in Example 1.

[0169] Example 24 This example is basically the same as Example 1 except that EDM32 is used instead of EDM1 in Example 1.

[0170] Example 25 This example is substantially the same as Example 1, except that EAM4 is used in place of EAM1 in Example 1.

[0171] Example 26 This example is substantially the same as Example 1, except that EAM6 is used in place of EAM1 in Example 1.

[0172] Example 27 This example is substantially the same as Example 1, except that EAM14 is used in place of EAM1 in Example 1.

[0173] Example 28 This example is substantially the same as Example 1, except that EAM24 is used in place of EAM1 in Example 1.

[0174] Example 29 This example is substantially the same as Example 1, except that EAM36 is used in place of EAM1 in Example 1.

[0175] Example 30 This example is substantially the same as Example 1, except that the content of EMOM in the host material in this example is 2 wt%.

[0176] Example 31 This example is substantially the same as Example 1, except that the content of EMOM in the host material in this example is 80 wt%.

[0177] Example 32 This example is substantially the same as Example 1, except that the mass ratio of EDM:EAM in this example is 9.5:0.5.

[0178] Example 33 This example is substantially the same as Example 1, except that the mass ratio of EDM:EAM in this example is 0.5:9.5.

[0179] Example 34 This example is substantially the same as Example 1, except that the mass ratio of the host material to the guest material in the composition in this example is 8:2.

[0180] Example 35 This example is substantially the same as Example 1, except that the mass ratio of the host material to the guest material in the composition in this example is 9.8:0.2.

[0181] Comparative Example 1 This example is basically the same as Example 1, except that the host material in this comparative example does not include the exciton-modulating mixed material.

[0182] Comparative Example 2 This example is basically the same as Example 1, except that the host material in this comparative example includes EDM1 and EMOM1.

[0183] Comparative Example 3 This example is basically the same as Example 1, except that EAM36 is used to replace EAM1 in Example 1, and EMOM8 is used to replace EMOM1 in Example 1, and neither the EAM nor the EMOM in the composition of this comparative example satisfies |T1-S1|≤0.5 eV.

[0184] In Examples 1-35 and Comparative Examples 1-3, the LUMO and HOMO energy levels of the electron donor material are shown in Table 1 below, the LUMO, HOMO, singlet energy level S1 and triplet energy level T1 of the first electron acceptor material are shown in Table 2 below, and the LUMO, HOMO, singlet energy level S1 and triplet energy level T1 of the second electron acceptor material are shown in Table 3 below.

[0185] The method for determining the HOMO and LUMO energy levels is as follows: using TD-DFT (time-dependent density functional theory) through Gaussian 09W (Gaussian Inc.), first optimizing the molecular geometry using the semi-empirical method “Ground State / Semi-empirical / Default Spin / AM1” (Charge 0 / Spin Singlet), and then calculating the energy structure of the organic molecule using the TD-DFT (time-dependent density functional theory) method “TD-SCF / DFT / Default Spin / B3PW91” with the basis set “6-31G(d)” (Charge 0 / Spin Singlet).

[0186] The HOMO and LUMO energy levels are calculated according to the following calibration formula: HOMO (eV) = ((HOMO(G) x 27.212)-0.9899) / 1.1206; LUMO (eV) = ((LUMO(G) x 27.212)-2.0041) / 1.385.

[0187] The energy level of S1 is obtained using room temperature fluorescence spectrum, and the energy level of T1 is obtained using low temperature (77K) phosphorescence spectrum. Both the room temperature fluorescence spectrum and the low temperature phosphorescence spectrum are obtained using a fluorescence spectrometer, and the low temperature phosphorescence spectrum requires a liquid nitrogen environment.

[0188] Table 1:

[0189] Table 2:

[0190] Table 3:

[0191] The color coordinates, current efficiency CE@1000nit, voltage (voltage@J10) and lifetime T95@1000nit of the light-emitting devices of Examples 1-35 and Comparative Examples 1-3 were tested, and the test results are shown in Table 4. 2

[0192] The current efficiency CE@1000nit and voltage@J10 were measured by using the FPD optical property measurement device of Fosdor, the efficiency test system built by LabView controlling CS2000 spectrometer, Keithley 2400 and Keithley 6485, the parameters of voltage, current, brightness and emission spectrum were measured, and the current efficiency was obtained by calculation.

[0193] The test method of the lifetime T95 was that the time required for the brightness of the device to decrease to a certain percentage of the highest brightness under the driving of a constant current density, the time for the brightness to decrease to 95% of the highest brightness was defined as T95, and the lifetime was the measured lifetime. In order to shorten the test period, the device lifetime test was usually carried out by accelerating the device aging at high brightness, and the lifetime at high brightness was obtained by fitting the extended exponential decay brightness decay fitting formula, for example, the lifetime at 1000 nit was T95@1000nit. The specific calculation formula was: L H H L 2

[0194] Table 4:

[0195] ​​​​​​​Compared with the light-emitting devices of Comparative Examples 1-2, the light-emitting devices of Examples 1-35 have similar color coordinates, similar voltage@J10, better current efficiency and significantly longer lifetime. It can be seen that the light-emitting device using the composition of the present application as the light-emitting layer material can have higher current efficiency and longer lifetime on the basis of ensuring that the light-emitting device has better voltage@J10. The reason may be that in the composition of the present application, the host material with energy level gradient distribution can produce energy gradient distribution of the exciplex. In the energy transfer process, part of the higher energy is not transferred to the guest material, and in the presence of higher energy and lower energy, the part of the higher energy not transferred to the guest material will be transferred to the lower energy, and so on. On the one hand, this can effectively reduce the energy loss not transferred to the guest material, avoid large-area energy accumulation, and effectively promote charge balance; Compared with the light-emitting device of Comparative Example 3, the light-emitting devices of Examples 1-23 have similar color coordinates, similar voltage@J10, better current efficiency and significantly longer lifetime. It can be seen that the light-emitting device using the composition of the present application as the light-emitting layer material can have higher current efficiency and longer lifetime on the basis of ensuring that the light-emitting device has better voltage@J10. The reason may be that in the composition of Examples 1-23, the single state energy level and the triplet state energy level of at least one material in the first electron acceptor material and the n second electron acceptor materials satisfy ∣T1-S1∣≤0.5eV. On the one hand, in the process of excitation transfer, the first electron acceptor material and / or the second electron acceptor material satisfying the condition is more likely to form an exciplex with the electron donor material, which is more conducive to the formation of a multi-exciton channel (multiple exciplex energy channels), thereby effectively reducing the energy loss not transferred to the guest material, avoiding large-area energy accumulation, and effectively promoting charge balance, thereby more effectively improving the lifetime of the light-emitting device prepared from the composition. On the other hand, the first electron acceptor material and / or the second electron acceptor material satisfying the condition has a similar energy recovery and retransfer effect in the entire energy transfer process. A part of the energy that cannot be directly transferred to the guest material will be transferred to the first electron acceptor material and / or the second electron acceptor material satisfying the condition. Due to the small difference between S1 and T1, the energy can be quickly returned, and then the energy is transferred to the guest material, thereby establishing a more effective additional multi-exciton transfer channel to avoid energy accumulation.

[0196] The technical solutions provided by the embodiments of the present application are described in detail above, and the principles and implementation manners of the present application are described by applying specific examples. The above description of the embodiments is only used to help understand the method of the present application and its core idea; meanwhile, for those skilled in the art, the specific implementation manners and application ranges will be changed according to the idea of the present application. In conclusion, the content of the specification should not be understood as a limitation of the present application.

Claims

1. A composition comprising a host material and an object material, characterized in that, The host material includes an electron donor material, a first electron acceptor material, and an exciton modulation hybrid material. The exciton modulation hybrid material includes n types of second electron acceptor materials, where n is an integer greater than 0. The n types of second electron acceptor materials include second electron acceptor material a1 to second electron acceptor material a1. n ,in, When n=1, the LUMO energy level of the first electron acceptor material is greater than the LUMO energy level of the second electron acceptor material a1; when n≥2, the LUMO energy level of the first electron acceptor material is greater than the LUMO energy level of the second electron acceptor material a1, and the second electron acceptor material a1... x-1 The LUMO energy level is greater than that of the second electron acceptor material a x The LUMO energy level, where x is any integer from 2 to n; In the first electron acceptor material and the n second electron acceptor materials, at least one material's singlet and triplet energy levels satisfy |T1-S1|≤0.5eV, where T1 is the triplet energy level and S1 is the singlet energy level. The electron donor material has the structure shown in formula (I): （I） Where m' and n' are each independently selected from any integer from 1 to 4; L is selected from a single bond, a substituted or unsubstituted aromatic group having 6 to 60 carbon atoms, a substituted or unsubstituted heteroaromatic group having 3 to 60 carbon atoms, or any combination of these groups; At least one of R, m' R', and n' R'' is a hole transport unit, and each of the remaining ones is independently selected from an aromatic group with 6 to 60 substituted or unsubstituted carbon atoms, a heteroaromatic group with 3 to 60 substituted or unsubstituted carbon atoms, or any combination of these groups. At least one of R, m R', and n R'' contains a substituted or unsubstituted carbazoyl group; Each substituent described in L, R, R', R'' is independently selected from D, -F, -Cl, -Br, -I, hydroxyl, mercapto, carboxyl, nitro, amino, sulfonic acid, silyl, C1~C 20 Alkyl, C1~C 20 Alkoxy, C1~C 20 Alkyl thioyl, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, arylthioyl with 6 to 60 ring atoms, or any combination of these groups.

2. The composition according to claim 1, characterized in that, L is selected from a single bond, a substituted or unsubstituted aromatic group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaromatic group having 3 to 30 carbon atoms, or any combination of these groups; At least one of R, m' R', and n' R'' is a hole transport unit, and each of the remaining ones is independently selected from an aromatic group with 6 to 30 substituted or unsubstituted carbon atoms, a heteroaromatic group with 3 to 30 substituted or unsubstituted carbon atoms, or any combination of these groups. Each substituent described in L, R, R', R'' is independently selected from D, -F, -Cl, -Br, -I, hydroxyl, mercapto, carboxyl, nitro, amino, sulfonic acid, silyl, C1~C 10 Alkyl, C1~C 10 Alkoxy, C1~C 10 Alkyl thioyl, aryl with 6 to 30 ring atoms, aryloxy with 6 to 30 ring atoms, arylthioyl with 6 to 30 ring atoms, or any combination of these groups.

3. The composition according to claim 1, characterized in that, The hole transmission unit is selected from one or more of the following structures: Among them, Ar 11 Selected from aromatic groups having 6 to 40 carbon atoms, substituted or unsubstituted, or heteroaromatic groups having 3 to 40 carbon atoms, or any combination of these groups; Y1 and Y2 are independently selected from single bonds, N(R3), C(R3R4), Si(R3R4), O, S, C=N(R3), C=C(R3R4) or P(R3); R1, R2, R3, and R4 are each independently selected from alkyl groups having 1 to 30 carbon atoms (substituted or unsubstituted), alkoxy groups having 1 to 30 carbon atoms (substituted or unsubstituted), cycloalkyl groups having 3 to 30 carbon atoms (substituted or unsubstituted), aromatic groups having 6 to 60 cyclic atoms (substituted or unsubstituted), heteroaromatic groups having 5 to 60 cyclic atoms (substituted or unsubstituted), or any combination of these groups.

4. The composition according to claim 1, characterized in that, The second electron acceptor material has the structure shown in formula (II): (II) Where m0 and n0 are each independently selected from integers from 1 to 4; X and Y are selected from N, O, and S respectively, and at least one of X and Y is N; Each of the following L1, L2, and L3 is independently selected from a single bond, a substituted or unsubstituted aromatic group having 6 to 60 carbon atoms, a substituted or unsubstituted heteroaromatic group having 3 to 60 carbon atoms, or any combination of these groups. R a m0 R b n0 R c In this process, at least one is a first electron transport unit, and each of the remaining units is independently selected from an aromatic group having 6 to 60 substituted or unsubstituted carbon atoms, a heteroaromatic group having 3 to 60 substituted or unsubstituted carbon atoms, or any combination of these groups. L1, L2, L3, R a R b R c Each substituent mentioned herein is independently selected from D, -F, -Cl, -Br, -I, hydroxyl, mercapto, carboxyl, nitro, amino, sulfonic acid, silyl, C1~C1. 20 Alkyl, C1~C 20 Alkoxy, C1~C 20 Alkyl thioyl, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, arylthioyl with 6 to 60 ring atoms, or any combination of these groups.

5. The composition according to claim 4, characterized in that, m0 and n0 are each independently selected from integers from 1 to 2; Each of L1, L2, and L3 is independently selected from single bonds, substituted or unsubstituted aromatic groups with 6 to 30 carbon atoms, substituted or unsubstituted heteroaromatic groups with 3 to 30 carbon atoms, or any combination of these groups. R a m0 R b n0 R c In this process, at least one is a first electron transport unit, and each of the remaining units is independently selected from an aromatic group having 6 to 30 substituted or unsubstituted carbon atoms, a heteroaromatic group having 3 to 30 substituted or unsubstituted carbon atoms, or any combination of these groups. L1, L2, L3, R a R b R c Each substituent mentioned herein is independently selected from D, -F, -Cl, -Br, -I, hydroxyl, mercapto, carboxyl, nitro, amino, sulfonic acid, silyl, C1~C1. 10 Alkyl, C1~C 10 Alkoxy, C1~C 10 Alkyl thioyl, aryl with 6 to 30 ring atoms, aryloxy with 6 to 30 ring atoms, arylthioyl with 6 to 30 ring atoms, or any combination of these groups.

6. The composition according to claim 4, characterized in that, The first electron transport unit is selected from F, cyano, or one or more of the following groups: Where a1 is 1, 2 or 3; X 1 To X 8 Each is independently selected from CR7 or N, and at least one of them is N; M 1 M 2 M 3 Each of the following can be independently represented: N(R7), C(R7R8), Si(R7R8), O, C=N(R7), C=C(R7R8), P(R7), P(=O), R7, S, S=O, SO2, or none. R5, R6, R7, and R8 are each independently selected from alkyl groups having 1 to 30 carbon atoms (substituted or unsubstituted), alkoxy groups having 1 to 30 carbon atoms (substituted or unsubstituted), cycloalkyl groups having 3 to 30 carbon atoms (substituted or unsubstituted), aromatic groups having 6 to 60 ring atoms (substituted or unsubstituted), heteroaromatic groups having 5 to 60 ring atoms (substituted or unsubstituted), or any combination of these groups.

7. The composition according to claim 4, characterized in that, The first electron transport unit is selected from one or more of the following groups: Each occurrence of X' is independently selected from C, N, O, or S, and at least one X' in each group is N.

8. The composition according to claim 1, characterized in that, The LUMO energy level of the electron donor material is greater than that of the LUMO energy level of the first electron acceptor material; The HOMO energy level of the electron donor material is greater than that of the first electron acceptor material; The HOMO energy level of the electron donor material is greater than the HOMO energy level of each of the second electron acceptor materials.

9. The composition according to claim 1, characterized in that: When n≥2, the difference between the LUMO energy level of the first electron acceptor material and the LUMO energy level of the second electron acceptor material a1 is equal to the difference between the LUMO energy level of the second electron acceptor material a1 and the LUMO energy level of the second electron acceptor material a1. x-1 The LUMO energy level and the second electron acceptor material a x The absolute value of the difference between the LUMO energy levels is less than or equal to 0.5 eV.

10. The composition according to claim 1, characterized in that, The absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of the first electron acceptor material is greater than the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of each of the second electron acceptor materials.

11. The composition according to claim 10, characterized in that, When n≥2, the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of the first electron acceptor material is greater than the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of the second electron acceptor material a1, and the difference between the HOMO energy level of the electron donor material and the LUMO energy level of the second electron acceptor material a1 is greater than the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of the second electron acceptor material a1. y-1 The absolute value of the difference between the LUMO energy levels is greater than that between the HOMO energy levels of the electron donor material and the second electron acceptor material a. y The absolute value of the difference between the LUMO energy levels, where y is any integer from 2 to n.

12. The composition according to claim 1, characterized in that, The triplet energy level of the first excitocomplex generated by the electron donor material and the first electron acceptor material is greater than the triplet energy level of the second excitocomplex generated by the electron donor material and each of the second electron acceptor materials.

13. The composition according to claim 12, characterized in that, When n≥2, the triplet energy level of the first excitocomplex generated by the electron donor material and the first electron acceptor material is greater than the triplet energy level of the second excitocomplex generated by the electron donor material and the second electron acceptor material a1, and the electron donor material and the second electron acceptor material a1 z-1 The triplet energy level of the generated second excitocomplex is greater than that of the electron donor material and the second electron acceptor material. z The generated second excitocomplex triplet energy level, where z is any integer from 2 to n.

14. The composition according to claim 1, characterized in that, The absolute value of the difference between the LUMO energy level of the first electron acceptor material and the LUMO energy level of the second electron acceptor material a1 is 0.01 eV to 0.5 eV; The second electron acceptor material a x-1 The LUMO energy level and the second electron acceptor material a x The absolute value of the difference between the LUMO energy levels is 0.01 eV to 0.5 eV.

15. The composition according to claim 1, characterized in that, n is any integer from 1 to 50; The absolute value of the difference between the LUMO energy level of the electron donor material and the LUMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV; The absolute value of the difference between the HOMO energy level of the electron donor material and the HOMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV; The triplet energy levels of the electron donor material, the first electron acceptor material, and the exciton-modulated hybrid material are all higher than the triplet energy level of the guest material.

16. The composition according to claim 1, characterized in that, The n is any integer from 1 to 15; The absolute value of the difference between the HOMO energy level of the electron donor material and the HOMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV and less than or equal to 1 eV; The absolute value of the difference between the HOMO energy level of the electron donor material and the HOMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV and less than or equal to 1 eV; In the composition, the content of the host material is 80 wt% to 98 wt%, and the content of the guest material is 2 wt% to 20 wt%; In the host material, the total content of the electron donor material and the first electron acceptor material is 20 wt% to 98 wt%, and the content of the exciton modulation hybrid material is 2 wt% to 80 wt%; The mass ratio of the electron donor material to the first electron acceptor material is x:y, where 0 < x < 10, 0 < y < 10, and x + y = 10.

17. The composition according to claim 1, characterized in that, The electron donor material includes at least one of the compounds represented by the following structural formulas: 。 18. The composition according to claim 1, characterized in that, The second electron acceptor material includes at least one of the compounds represented by the following structural formulas: 。 19. The composition according to claim 1, characterized in that, The first electron acceptor material has the structure represented by formula (III): (III) Where m1 is an integer selected from 1 to 6; A is a second electron transport unit; Ar2 is selected from a substituted or unsubstituted aromatic group having 6 to 60 carbon atoms, a substituted or unsubstituted heteroaromatic group having 3 to 60 carbon atoms, or any combination of these groups.

20. The composition of claim 19, characterized in that, The second electron transport unit is selected from one or more of F, cyano, or the following groups: Where b1 is 1, 2, or 3; Y 1 To Y 8 Each independently selected from CR 11 Or N, and at least one of them is N; N 1 N 2 N 3 Represent N(R) independently 11 ), C(R 11 R 12 ), Si(R) 11 R 12 O, C=N(R) 11 C=C(R) 11 R 12 ), P(R 11 ), P(=O) R 11 S, S=O, SO2 or none; R9, R 10 R 11 R 12 The groups are individually selected from alkyl groups having 1 to 30 carbon atoms (substituted or unsubstituted), alkoxy groups having 1 to 30 carbon atoms (substituted or unsubstituted), cycloalkyl groups having 3 to 30 carbon atoms (substituted or unsubstituted), aromatic groups having 6 to 60 cyclic atoms (substituted or unsubstituted), heteroaromatic groups having 5 to 60 cyclic atoms (substituted or unsubstituted), or any combination of these groups.

21. The composition according to claim 19, characterized in that, The second electron transport unit is selected from a combination of one or more of the following groups: Where X'' is independently selected from C, N, O, or S each time it appears, and at least one X'' in each group is N.

22. The composition according to claim 1, characterized in that, The first electron acceptor material includes at least one of the compounds represented by the following structural formulas: 。 23. The composition according to claim 1, characterized in that, The guest material is selected from one or more of phosphorescent guest materials, fluorescent guest materials, and narrow-spectrum thermally activated delayed fluorescent guest materials. The phosphorescent guest material includes one or more of iridium-containing phosphorescent guest materials and platinum-containing phosphorescent guest materials. The iridium-containing phosphorescent guest material includes one or more of tris[2-phenylpyridine]iridium(III), tris[2-(p-tolyl)pyridine]iridium(III), bis(2-phenylpyridine)iridium acetylacetonate, and bis(4,6-difluorophenylpyridine-N,C2)pyridinecarboxylated iridium. The fluorescent guest material includes 5,12-dimethylquinacridone, 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-dichlorophenylpyridine)pyridinecarboxylated iridium. -Tetramethyljuronidinyl-4-vinyl)-4H-pyran, 3-(dicyanomethylene)-5,5-dimethyl-1-(4-dimethylamino-styryl)cyclohexene, 2-[2-isopropyl-6-[2-(2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H-benzo[ij]quinazin-9-yl)vinyl]-4H-pyran-4-yl]malonitrile; the narrow-spectrum thermally activated delayed fluorescence luminescent guest material includes IDID2BN, 10-(2,12-di-tert-butyl-5,9-dioxa-13b-boronaphtho[3,2,1-de]anthra-7-yl)-9,9-dimethyl-9,10-dihydroacrylidine, 5-(2,12- Di-tert-butyl-5,9-dioxa-13b-boronaphtho[3,2,1de]anthracene-7-yl)-10,15-diphenyl-10,15-dihydro-5H-diindole[3,2-a:3',2'-c]carbazole, 9'-(2,12-di-tert-butyl-5,9-dioxa-13b-boronaphtho-[3,2,1de]anthracene-7-yl)-9,9'-diphenyl-9H,9'H,9'-H-3,3':6',3'-dicarbazole, 10,10'-(4,4'-sulfonylbis(4,1-phenylene))bis(9,9-dimethyl-9,10-dihydroacridine), 9'-[4-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-3,3” One or more of the following: 6,6'-tetraphenyl-9,3':6',9'-tert-9H-carbazole, (9'-(2,12-di-tert-butyl-5,9-dioxa-13b-boronaphtho[3,2,1-de]anthracene-7-yl)-9'H-9,3':6',9'-dicarbazole, 5-(3,11-dimethyl-5,9-dioxa-13b-boronaphtho[3,2,1-de]anthracene-7-yl)-10,15-diphenyl-10,15-dihydro-5H-diindol[3,2-a:3',2'-c]carbazole, and 3,11-bis(1,3,6,8-tetramethyl-9H-carbazole-9-yl)-5,9-dioxa-13b-boronaphtho[3,2,1-de]anthracene.

24. A mixture, characterized in that: Includes solvents and compositions according to any one of claims 1 to 23.

25. The mixture as claimed in claim 24, characterized in that, The content of the composition in the mixture is 0.3~30 wt%; The solvent comprises one or more of aromatic or heteroaromatic compounds, aromatic esters, alkanes, ethers, ketones, and amines. The aromatic or heteroaromatic compounds include diisopropylbenzene, pentylene, tetrahydronaphthalene, cyclohexylbenzene, chloronaphthalene, 1,4-dimethylnaphthalene, 3-isopropylbiphenyl, p-methylisopropylbenzene, dipentylbenzene, tripentylbenzene, pentyltoluene, o-diethylbenzene, m-diethylbenzene, p-diethylbenzene, 1,2,3,4-tetramethylbenzene, 1,2,3,5-tetramethylbenzene, 1,2,4,5-tetramethylbenzene, butylbenzene, dodecylbenzene, dihexylbenzene, dibutylbenzene, and p-diisopropylbenzene. One or more of the following: cyclohexylbenzene, benzylbutylbenzene, dimethylnaphthalene, 3-isopropylbiphenyl, p-methylisopropylbenzene, 1-methylnaphthalene, 1,2,4-trichlorobenzene, 4,4-difluorodiphenylmethane, 1,2-dimethoxy-4-(1-propenyl)benzene, diphenylmethane, 2-phenylpyridine, 3-phenylpyridine, N-methyldiphenylamine, 4-isopropylbiphenyl, α,α-dichlorodiphenylmethane, 4-(3-phenylpropyl)pyridine, 1,1-bis(3,4-dimethylphenyl)ethane, 2-isopropylnaphthalene, quinoline, isoquinoline, methyl 2-furanate, and ethyl 2-furanate; the aromatic ester compounds include ethyl acetate. The alkane compounds include one or more of the following: butyl acetate, amyl acetate, alkyl benzoate, alkyl octanoate, alkyl sebacate, alkyl stearate, alkyl phenylacetate, alkyl cinnamate, alkyl oxalate, alkyl maleate, alkyl lactone, alkyl oleate, and alkylated alkyl benzoate; the alkane compounds include one or more of the following: n-octane, n-pentane, n-hexane, cyclohexane, phenylcyclohexane, dodecane, and decane; the ether compounds include glycidyl phenyl ether, dibenzyl ether, 4-tert-butyl anisole, trans-p-propenyl anisole, diphenyl ether, 2-phenoxymethyl ether, 2-phenoxytetrahydrofuran, and ethyl-2-naphthyl ether, pentyl ether, and hexyl ether. The compounds are one or more selected from dioctyl ether, ethylene glycol dibutyl ether, diethylene glycol diethyl ether, diethylene glycol butyl methyl ether, diethylene glycol dibutyl ether, triethylene glycol dimethyl ether, triethylene glycol ethyl methyl ether, triethylene glycol butyl methyl ether, tripropylene glycol dimethyl ether, and tetraethylene glycol dimethyl ether; the ketone compounds include one or more selected from 1-tetrahydronaphthone, 2-tetrahydronaphthone, 2-(phenylepoxy)tetrahydronaphthone, 6-(methoxy)tetrahydronaphthone, acetophenone, phenylacetone, benzophenone, and derivatives of the above solvents; the amine compounds include one or more selected from aniline, dimethylacetamide, ethylenediamine, octadeceneamine, ethanolamine, and N,N-dimethylformamide.

26. A light-emitting device, comprising an anode, a light-emitting layer, and a cathode stacked sequentially, characterized in that: The material of the light-emitting layer includes the composition according to any one of claims 1 to 23.

27. The light-emitting device as described in claim 26, characterized in that, The anode and the cathode each independently include a doped metal oxide particle electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal element electrode, or an alloy electrode. The material of the doped metal oxide particle electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, or ZnS / Al / ZnS. The material of the metal element electrode includes one or more of Ag, Al, Cu, Mo, Au, Pt, Ca, Mg, and Ba. The alloy electrode includes an Au:Mg alloy electrode or an Ag:Mg alloy electrode. The light-emitting device further includes a hole transport layer located between the anode and the light-emitting layer. The hole transport layer is made of materials including NHT-51, HTM014, HTM081, HTM163, HTM222, NHT-5, NHT-18, NHT-49, NHT-51, EL-301, EL-22T, 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4''-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N, N'bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiroNPB, poly(phenylene oxide) Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], 1,3-di(carbazole-9-yl)benzene, polyaniline, polypyrrole, poly(p)phenylenevinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazole)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylates and their derivatives, poly(9,The metal oxide comprises one or more of the following: 9-octylfluorene and its derivatives, poly(spirofluorene) and its derivatives, second-doped metal oxide particles, second-undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the second-doped and second-undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5. The doping element in the second-doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfide includes one or more of CuS, MoS3, and WS3. The metal selenide includes one or more of MoSe3 and WSe3. The metal nitride includes p-type gallium nitride. The light-emitting device further includes a hole injection layer located between the anode and the hole transport layer. The hole injection layer is made of materials including NDP-2, NDP-9, F4-TCNQ, F6-TCNNQ, poly(3,4-ethylenedioxythiophene), poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethylethane, and 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene. Polyester copper carbonate, free phthalocyanine, copper phthalocyanine, platinum phthalocyanine, titanium phthalocyanine, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, 7,7,8,8-tetracyano-p-benzodiquinone dimethyl ether, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-di-1-naphthyl-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(4'-(N,N-di(1-naphthyl)-amino)-4-biphenyl)-benzidine, N,N′-di(phenyl)-N,N ′-Di(4′-(N,N-di(phenylamino)-4-biphenyl)benzidine, N,N'-diphenyl-N,N'-di-[4-(N,N-di-p-tolylamino)phenyl]benzidine, N4,N4,N4',N4'-tetra(4-methoxyphenyl)-[1,1'-biphenyl]-4,4'-diamine, 4,4',4''-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4'4"-tris(N,N-diphenylamino)triphenylamine, N2,N2'-(9,9-dimethyl-9H -fluorene-2,7-diyl)bis(9,9-dimethyl-N2,N7,N7-triphenyl-9H-fluorene-2,7-diamine), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, transition metal oxides, and transition metal chalcogenides, wherein the transition metal oxides are selected from one or more of NiO, MoO3, WO3, CuO, and Cu2O; and the transition metal chalcogenides are selected from one or more of MoS2, MoSe2, WS3, WSe3, and CuS. The light-emitting device further includes an electron transport layer located between the light-emitting layer and the cathode. The electron transport layer is made of one or more materials selected from inorganic and organic electron transport materials. The inorganic electron transport material includes one or more of doped metal oxide particles, undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3; the doping element in the doped metal oxide particles includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga; the IIB-VIA group semiconductor material includes one or more of ZnS, ZnSe, and CdS; the IIIA-VA group semiconductor material includes one or more of InP and GaP; and the IB-IIIA-VIA group semiconductor material includes one or more of CuInS and CuGaS.The organic electron transport materials include NET-164, NDN-87, NDN-45, NDN-18, NDN-218, ET093, ETM020, ETM033, ETM034, ETM036, diphenyl[4-(triphenylsilyl)phenyl]phosphine oxide, 1,3,5-tris((3-pyridyl)-3-phenyl)benzene, 2-(4-biphenyl)-5-phenyloxadiazole, bis(10-hydroxybenzo[h]quinoline)beryllium, 3-( Biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole, 2,7-bis(diphenyloxyphosphino)-9,9'-spirobis[fluorene], 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, 4,6-bis(3,5-di(3-pyridinylphenyl)-2-methylpyrimidine-4,7-diphenyl-1,10-phenanthroline, 2-(4'-tert-butylphenyl)-5-(4'-biphenyl)-1,3,4-oxo Diazole, 2,9-dimethyl-4,7-diphenyl-1,10-o-phenanthroline, 4,7-diphenyl-1,10-o-phenanthroline, bis(2-methyl-8-hydroxyquinoline-N1,O8)-1,1'-biphenyl-4-hydroxy)aluminum, 8-hydroxyquinoline aluminum, 8-hydroxyquinoline lithium, 2,7-bis(diphenyloxyphosphino)-9,9'-spirobis[fluorene], poly[9,9-dioctylfluorene-9,9-bis(N,N-dimethylaminopropyl)fluorene], 9,9-bis[3 One or more of the following: '-(N,N-dimethylamino)propyl-2,7-fluorene]-alternating-2,7-(9,9-dioctylfluorene), 1,3-bis[5-(4-tert-butylphenyl)-2-[1,3,4]oxadiazolyl]benzene, 3',3'",3'""-(1,3,5-triazine-2,4,6-triyl)-tris(([1,1'-biphenyl]-3-carboxynitrile)), and 2,4,6-tris[3-(diphenylphosphoxy)phenyl]-1,3,5-triazole; The light-emitting device further includes an electron injection layer located between the electron transport layer and the cathode. The material of the electron injection layer includes one or more of Yb, YF3, Li, LiF, NaF, CsCO3, Cs, KBH4, and KH.

28. A display device, characterized in that, The display device includes the light-emitting device according to any one of claims 26 to 27.

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