Composition, mixture, light emitting device and display device

Abstract

The invention discloses a composition, a mixture, a light-emitting device and a display device. The composition comprises a host material and a guest material, the host material comprises an electron donor material, a first electron acceptor material and an exciton modulation mixed material, the exciton modulation mixed material comprises n second electron acceptor materials, n is an integer greater than 0, and n is an integer greater than 0. The LUMO energy level of the first electron acceptor material and the LUMO energy levels of the n second electron acceptor materials are sequentially decreased. The light-emitting layer prepared from the composition is used for the light-emitting device, and the comprehensive performance of the light-emitting device can be effectively improved.

Description

Technical Field

[0001] This application relates to the field of luminescent materials technology, and more particularly to a composition, mixture, luminescent device, and display device. Background Technology

[0002] Organic light-emitting diodes (OLEDs) have advantages such as wide color gamut, high color saturation and contrast, and active light emission, making them popular and widely used in display and lighting applications of different sizes.

[0003] A typical OLED device has a sandwich structure, specifically a stacked structure consisting of a hole injection layer, a hole transport layer, an emissive layer, an electron transport layer, and an electron injection layer sandwiched between positive and negative electrodes. When a certain voltage is applied to the two electrodes of the OLED, positively charged carriers (holes) are injected into the emissive layer from the anode and hole injection layer via the hole transport layer, while negatively charged carriers (electrons) are injected into the emissive layer from the cathode and electron injection layer via the electron transport layer. Electrons and holes meet and recombine in the emissive layer to generate excitons, which then undergo energy transitions to produce photons, thus emitting light of a specific wavelength.

[0004] When the luminescent layer prepared from existing luminescent material compositions is used in OLEDs, the overall performance of the OLEDs needs further improvement. Summary of the Invention

[0005] In view of this, this application provides a composition, a mixture, a light-emitting device, and a display device.

[0006] In a first aspect, this application provides a composition comprising a host material and a guest material, wherein the host material comprises an electron donor material, a first electron acceptor material, and an exciton modulation hybrid material, and the exciton modulation hybrid material comprises n kinds of second electron acceptor materials, where n is an integer greater than 0, and the n kinds of second electron acceptor materials include second electron acceptor material a1 to second electron acceptor material a2. n ,in, When n=1, the LUMO energy level of the first electron acceptor material is greater than the LUMO energy level of the second electron acceptor material a1; when n≥2, the LUMO energy level of the first electron acceptor material is greater than the LUMO energy level of the second electron acceptor material a1, and the second electron acceptor material a1... x-1 The LUMO energy level is greater than that of the second electron acceptor material a x The LUMO energy level, where x is any integer from 2 to n; In the first electron acceptor material and the n second electron acceptor materials, at least one material has a singlet energy level and a triplet energy level that satisfy |T1-S1|≤0.5eV, where T1 is a triplet energy level and S1 is a singlet energy level; The electron donor material has the structure shown in formula (I):

[0007] (I) Where m' and n' are each independently selected from any integer from 1 to 4; Ar1 is selected from substituted or unsubstituted benzene rings; R a R b At least one of m' R' and n' R'' is a hole transport unit, and each of the remaining ones is independently selected from an aromatic group with 6 to 60 substituted or unsubstituted carbon atoms, a heteroaromatic group with 3 to 60 substituted or unsubstituted carbon atoms, or any combination of these groups; Ar1, R a R b Each substituent described in R', R'', and R'' is independently selected from D, -F, -Cl, -Br, -I, hydroxyl, mercapto, carboxyl, nitro, amino, sulfonic acid, silyl, C1~C 20 Alkyl, C1~C 20 Alkoxy, C1~C 20 Alkyl thioyl, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, arylthioyl with 6 to 60 ring atoms, or any combination of these groups.

[0008] Secondly, this application also provides a mixture comprising a solvent and the composition.

[0009] Thirdly, this application also provides a light-emitting device, comprising an anode, a light-emitting layer and a cathode stacked sequentially, wherein the material of the light-emitting layer comprises the composition.

[0010] Fourthly, this application also provides a display device including the aforementioned light-emitting device.

[0011] The light-emitting layer prepared by the composition described in this application can be used in light-emitting devices to effectively improve the lifespan of the light-emitting devices. Attached Figure Description

[0012] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0013] Figure 1 This is a schematic diagram of the structure of a light-emitting device provided in an embodiment of this application; Figure 2 This is a schematic diagram of another light-emitting device provided in the embodiments of this application.

[0014] Figure label: Light-emitting device 100; anode 10; light-emitting layer 20; cathode 30; hole transport layer 40; hole injection layer 50; electron transport layer 60; electron injection layer 70. Detailed Implementation

[0015] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. Furthermore, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application.

[0016] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the specification of this invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0017] In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in its actual use or operating state, specifically the drawing directions in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. Furthermore, in the description of this application, the term "comprising" means "including but not limited to". The terms first, second, third, etc., are used merely as illustrative purposes and do not impose numerical requirements or establish a numerical order.

[0018] In this application, "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural.

[0019] In this application, "at least one" means one or more, and "more than one" means two or more. "One or more", "at least one of the following", or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c", or "at least one of a, b, and c", can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0020] In this application, the term "on" forming another layer on a certain layer is a broad concept. It can mean that the formed other layer is adjacent to a certain layer, or it can mean that there are other spacer structures between the other layer and the certain layer. For example, when a second electrode is formed "on" a first charge carrier functional layer, the term "on" can mean that the formed second electrode is adjacent to the first charge carrier functional layer, or it can mean that there are other spacer structures between the second electrode and the first charge carrier functional layer, such as a light-emitting layer.

[0021] Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as a hard limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is referred to herein, it means including any referenced number (fraction or integer) within the referred range.

[0022] In this invention, "substitution" means that the hydrogen atom in the substituent is replaced by the substituent.

[0023] In this invention, when the same substituent appears multiple times, it can be independently selected from different groups. For example, if the general formula contains multiple R1s, then R1s can be independently selected from different groups.

[0024] In this invention, "substituted or unsubstituted" indicates that the defined group may or may not be substituted. When the defined group is substituted, it should be understood that the defined group can be substituted by one or more substituents R, wherein R is selected from, but is not limited to: deuterium, cyano, isocyano, nitro or halogen, C1-30 alkyl, heterocyclic group containing 3-20 ring atoms, aromatic group containing 6-20 ring atoms, heteroaromatic group containing 5-20 ring atoms, -NR'R'', silyl, carbonyl, alkoxycarbonyl, aryloxycarbonyl, carbamoyl, halocarbamoyl, etc. Formyl, isocyanate, thiocyanate, isothiocyanate, hydroxyl, trifluoromethyl, and the above groups may be further substituted with substituents acceptable in the art; it is understood that R' and R'' in -NR'R'' are independently selected from, but not limited to: H, deuterium, cyano, isocyano, nitro or halogen, C1-10 alkyl, heterocyclic group containing 3-20 ring atoms, aromatic group containing 6-20 ring atoms, and heteroaromatic group containing 5-20 ring atoms.

[0025] In this invention, "ring atom number" refers to the number of atoms in the ring-forming structure of a compound (e.g., monocyclic compound, fused-ring compound, cross-linked compound, carbocyclic compound, heterocyclic compound) obtained by atomic bonding. When the ring is substituted by a substituent, the atoms contained in the substituent are not included in the ring-forming atoms. The same applies to the "ring atom number" described below unless otherwise specified. For example, the benzene ring has 6 ring atoms, the naphthalene ring has 10 ring atoms, and the thiophene group has 5 ring atoms.

[0026] "Aryl or aromatic group" refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing one hydrogen atom. It can be a monocyclic aryl, a fused-ring aryl, or a polycyclic aryl. For polycyclic rings, at least one is an aromatic ring system. For example, "substituted or unsubstituted aryl having 6 to 40 ring atoms" means an aryl containing 6 to 40 ring atoms, preferably a substituted or unsubstituted aryl having 6 to 30 ring atoms, more preferably a substituted or unsubstituted aryl having 6 to 18 ring atoms, particularly preferably a substituted or unsubstituted aryl having 6 to 14 ring atoms, and optionally further substituted on the aryl group; suitable examples include, but are not limited to: phenyl, biphenyl, terphenyl, naphthyl, anthracene, phenanthrene, fluoranyl, triphenylene, pyrene, perylene, tetraphenyl, fluorenyl, dinaphthylphenyl, acenaphthyl and their derivatives. Understandably, multiple aryl groups can also be interrupted by short non-aromatic units (e.g., <10% non-H atoms, such as C, N, or O atoms), specifically acenaphthene, fluorene, or 9,9-diarylfluorene, triarylamine, and diaryl ether systems should also be included in the definition of aryl.

[0027] "Heteroaryl or heteroaromatic group" refers to an aryl group in which at least one carbon atom is replaced by a non-carbon atom, which can be an N atom, O atom, S atom, etc. For example, "substituted or unsubstituted heteroaryl group having 5 to 40 ring atoms" refers to a heteroaryl group having 5 to 40 ring atoms, preferably a substituted or unsubstituted heteroaryl group having 6 to 30 ring atoms, more preferably a substituted or unsubstituted heteroaryl group having 6 to 18 ring atoms, and particularly preferably a substituted or unsubstituted heteroaryl group having 6 to 14 ring atoms. The heteroaryl group may optionally be further substituted, and suitable examples include, but are not limited to: thiophene, furanyl, pyrrole, imidazole, triazolyl, imidazole, diazolyl, triazolyl, pyridyl, bipyridyl, pyrimidinyl, triazinyl, triazolyl, acridine, pyridazinyl, pyridinyl, etc. Azinyl, quinolinyl, quinazolinyl, quinoxalinyl, phthalazinyl, pyridinylpyrimidinyl, pyridinylpyrazinyl, pyrazinylpyrazinyl, isoquinolinyl, indolyl, carbazoleyl, benzothiopheneyl, benzofuranyl, indolyl, carbazoleyl, pyrroloimidazolyl, pyrrolopyrrololyl, thienopyrrololyl, thienopyrrololyl, furanolol, furanol, thienofuranyl, benzoisoxazolyl, benzoisothiazolyl, benzoimidazolyl, quinolinyl, isoquinolinyl, o-diazonaphthyl, quinoxalinyl, phenanthridine, primidyl, quinazolinyl, quinazolinone, dibenzothiopheneyl, dibenzofuranyl, carbazoleyl and their derivatives.

[0028] In this invention, "alkyl" can refer to straight-chain or branched alkyl. The number of carbon atoms in an alkyl group can be 1 to 50, 1 to 30, 1 to 20, 1 to 10, or 1 to 6. Phrases containing this term, such as "C1-9 alkyl," refer to alkyl groups containing 1 to 9 carbon atoms, and each time it appears, it can independently be C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, C5 alkyl, C6 alkyl, C7 alkyl, C8 alkyl, or C9 alkyl. Non-limiting examples of alkyl groups include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, n-heptyl, 1-methylheptyl, 2,2-dimethylheptyl, 2-ethylheptyl, 2-butylheptyl, n-octyl, tert-octyl, 2-ethyloctyl, 2-butyloctyl, 2-hexyloctyl, 3 7-Dimethyloctyl, n-nonyl, n-decyl, adamantyl, 2-ethyldecyl, 2-butyldecyl, 2-hexyldecyl, 2-octyldecyl, n-undecyl, n-dodecyl, 2-ethyldodecyl, 2-butyldodecyl, 2-hexyldodecyl, 2-octyldodecyl, n-tridecyl, n-tetradecyl, n-pentadecanyl, n-hexadecyl, 2-ethylhexadecyl, 2-butylhexadecyl, 2-hexylhexadecyl, 2-octylhexadecyl, n-heptadecyl, n-octadecyl, n-hep ...

[0029] In this application, "alkoxy" refers to a group with the structure "-O-alkyl", that is, an alkyl group as defined above that is attached to other groups via an oxygen atom. Suitable examples of phrases containing this term include, but are not limited to: methoxy (-O-CH3 or -OMe), ethoxy (-O-CH2CH3 or -OEt), and tert-butoxy (-OC(CH3)3 or -OtBu).

[0030] The main material in the emissive layer of an organic light-emitting diode (OLED) typically consists of three materials: an electron donor material (EDM), an electron acceptor material (EAM), and a light-emitting guest material (Dopant). During the light emission process, EDM and EAM combine to form an exciplex, which transfers energy to the Dopant, which then emits light. However, during energy transfer, the exciplex has a high yield and concentration, leading to incomplete and inefficient energy transfer. This can cause severe triplet-triplet annihilation upconversion (TTA) and triplet-polaron annihilation (TPQ), which can significantly reduce device lifetime and other performance characteristics.

[0031] The technical solution of this application is as follows: In a first aspect, embodiments of this application provide a composition comprising a host material and a guest material. The host material comprises an electron donor material (EDM), a first electron acceptor material (EAM), and an exciton modulation-mixing material (EMOM). The exciton modulation-mixing material comprises n second electron acceptor materials, where n is an integer greater than 0.

[0032] In some embodiments, n is any integer from 1 to 50, for example, any integer from 1 to 40, any integer from 1 to 30, any integer from 1 to 20, any integer from 1 to 10, any integer from 1 to 5, etc. In at least some embodiments, n is any integer from 1 to 15.

[0033] For electron donor materials EDM, the highest occupied molecular orbital (HOMO) energy is E. HOMO (D), its lowest unoccupied molecular orbital (LUMO) energy is E. LUMO (D); For the first electron acceptor material EAM, its highest occupied molecular orbital (HOMO) energy is E HOMO (A), its lowest unoccupied molecular orbital (LUMO) energy is E LUMO (A) For the exciton-modulated hybrid material EMOM (i.e., the second electron acceptor material), its highest occupied molecular orbital (HOMO) energy is E. HOMO (O), whose lowest unoccupied molecular orbital (LUMO) energy is E LUMO (O).

[0034] The n types of second electron acceptor materials include second electron acceptor material a1 to second electron acceptor material a nIn some embodiments, n=1, the LUMO energy level of the first electron acceptor material is greater than the LUMO energy level of the second electron acceptor material a1; that is, when n=1, E LUMO (A)>E LUMO (O, a1). In other embodiments, n ≥ 2, the LUMO level of the first electron acceptor material is greater than the LUMO level of the second electron acceptor material a1, and the second electron acceptor material a1... x-1 The LUMO energy level > second electron acceptor material a x The LUMO energy levels, where x is any integer from 2 to n, i.e., E LUMO (A)>E LUMO (O,a1)>E LUMO (O,a2)>······>E LUMO (O,an). Among them, E LUMO (O,a n ) is the nth electron acceptor material a n The LUMO energy level.

[0035] In some embodiments, the LUMO energy level of the electron donor material is greater than the LUMO energy level of the first electron acceptor material.

[0036] In some embodiments, the absolute value of the difference between the LUMO energy level of the electron donor material and the LUMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV, i.e., |E LUMO (D)-E LUMO (A) ≥ 0.25 eV. In at least some embodiments, the absolute value of the difference between the LUMO energy level of the electron donor material and the LUMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV and less than or equal to 1 eV.

[0037] In some embodiments, the HOMO energy level of the electron donor material is greater than the HOMO energy level of the first electron acceptor material.

[0038] In some embodiments, the HOMO energy level of the electron donor material is greater than the HOMO energy level of each of the second electron acceptor materials.

[0039] In some embodiments, the absolute value of the difference between the HOMO energy level of the electron donor material and the HOMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV, i.e., |E HOMO (D)-E HOMO (A) ≥ 0.25 eV. In at least some embodiments, the absolute value of the difference between the HOMO energy level of the electron donor material and the HOMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV and less than or equal to 1 eV.

[0040] Meeting the above conditions is more conducive to the efficient generation of sufficient excitocomplexes.

[0041] When n≥2, the LUMO energy level from the first electron acceptor material to the LUMO energy level of the second electron acceptor material a1, and then sequentially back to the second electron acceptor material a1. n The LUMO energy levels of the first electron acceptor material decrease in a gradient. In other words, the difference between the LUMO energy level of the first electron acceptor material and the LUMO energy level of the second electron acceptor material a1 is equal to the difference between the LUMO energy level of the second electron acceptor material a1 and the LUMO energy level of the second electron acceptor material a1. x-1 The LUMO energy level and the second electron acceptor material a x The absolute value of the difference between the LUMO energy levels is less than or equal to 0.5 eV.

[0042] The absolute range of the LUMO energy level difference between the first electron acceptor material and the second electron acceptor material with the closest LUMO energy levels, and the absolute range of the LUMO energy level difference between the two second electron acceptor materials with the closest LUMO energy levels, are each independently 0.01~0.5 eV, for example, 0.01 eV, 0.05 eV, 0.08 eV, 0.1 eV, 0.15 eV, 0.2 eV, 0.25 eV, 0.3 eV, 0.35 eV, 0.4 eV, 0.45 eV, 0.5 eV, etc. In other words, the range of the LUMO energy level from the first electron acceptor material a1 to the second electron acceptor material a2 is 0.01~0.5 eV. n The LUMO energy levels of the first electron acceptor material decrease in a gradient, with the absolute value of the gradient ranging from 0.01 to 0.5 eV, for example, 0.01 eV, 0.05 eV, 0.08 eV, 0.1 eV, 0.15 eV, 0.2 eV, 0.25 eV, 0.3 eV, 0.35 eV, 0.4 eV, 0.45 eV, 0.5 eV, etc. In other words, the absolute value of the difference between the LUMO energy level of the first electron acceptor material and the LUMO energy level of the second electron acceptor material a1 is 0.01 eV to 0.5 eV. x-1 The LUMO energy level and the second electron acceptor material a x The absolute value of the difference between the LUMO energy levels is 0.01 eV to 0.5 eV.

[0043] In some embodiments, the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of the first electron acceptor material is greater than the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of each of the second electron acceptor materials; in other words, |EHOMO (D)-E LUMO (A)∣>∣E HOMO (D)-E LUMO (O)∣.

[0044] When n≥2, the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of the first electron acceptor material, and the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of each of the second electron acceptor materials, gradually decrease; in other words, the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of the first electron acceptor material is greater than the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of the second electron acceptor material a1, and the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of the second electron acceptor material a1 is greater than the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of the second electron acceptor material a1. y-1 The absolute value of the difference between the LUMO energy levels of the electron donor material and the HOMO energy level of the second electron acceptor material is greater than that of the second electron acceptor material. y The absolute value of the difference between the LUMO energy levels, where y is any integer from 2 to n; in other words, |E HOMO (D)-E LUMO (A)∣>∣E HOMO (D)-E LUMO (O,a1)∣>∣E HOMO (D)-E LUMO (O,a2)∣>······>∣E HOMO (D)-E LUMO (O,a n )∣.

[0045] The triplet energy level of the first exciton complex formed by the electron donor material and the first electron acceptor material is greater than the triplet energy levels of the second exciton complexes formed by the electron donor material and each of the second electron acceptor materials. It can be understood that the triplet energy level of the first exciton complex refers to the lowest excited triplet energy level of the first exciton complex, and the triplet energy level of the second exciton complex refers to the lowest excited triplet energy level of the second exciton complex.

[0046] When n≥2, the triplet energy level of the first excitokinetic complex generated by the electron donor material and the first electron acceptor material, as well as the energy of the second excitokinetic complex generated by the electron donor material and each of the second electron acceptor materials, gradually decreases; in other words, the triplet energy level of the first excitokinetic complex generated by the electron donor material and the first electron acceptor material is greater than the triplet energy level of the second excitokinetic complex generated by the electron donor material and the second electron acceptor material a1, and the energy of the electron donor material and the second electron acceptor material a1... z-1The triplet energy level of the generated second excitocomplex > the electron donor material and the second electron acceptor material a z The generated second excitocomplex triplet energy level, where z is any integer from 2 to n.

[0047] As an example, in some embodiments, the triplet energy level of the first exciplex that can be generated between the electron donor material and the first electron acceptor material is E (exciplex), the triplet energy level of the second exciplex that can be generated between the electron donor material and the second electron acceptor material a1 is E1 (exciplex1), the triplet energy level of the second exciplex that can be generated between the electron donor material and the second electron acceptor material a2 is E2 (exciplex2), ..., the triplet energy level of the second exciplex that can be generated between the electron donor material and the second electron acceptor material a2 is E2 (exciplex2), ..., the triplet energy level of the second exciplex that can be generated between the electron donor material and the second electron acceptor material a2 is E2 (exciplex2), ... n The triplet energy level of the second excitocomplex that can be generated between them is E n (exciplex) n The triplet energy levels of the first excitocomplex and the second excitocomplex satisfy: E>E1>E2>...>E n Thus, during energy transfer, while the energy of E is transferred to the guest material, some of the energy of E is not transferred to the guest material. If a triplet level E1, which is lower than E, is present, this portion of the energy not transferred to the guest material will be transferred to E1. If a triplet level E2, which is lower than E1, is present, this portion of the energy not transferred to the guest material will be transferred to E2, and so on. This effectively reduces energy loss that is not transferred to the guest material, preventing large-area energy accumulation and thus effectively improving the lifetime of the light-emitting device prepared from the composition. Furthermore, it effectively promotes charge balance, thereby increasing the lifetime of the light-emitting device prepared from the composition.

[0048] In some embodiments, among the first electron acceptor material and the n second electron acceptor materials, at least one material has a singlet level and a triplet level that satisfy |T1-S1|≤0.5 eV, where T1 is a triplet level, i.e., the lowest excited triplet level, and S1 is a singlet level, i.e., the lowest excited singlet level. Thus, on the one hand, during exciton transport, the first electron acceptor material and / or the second electron acceptor material that meets the aforementioned conditions are more likely to form excitocomplexes with the electron donor material, which is more conducive to the formation of multi-exciton channels (multi-excitocomplex energy channels). This effectively reduces energy loss that is not transferred to the guest material, avoids large-area energy accumulation, and effectively promotes charge balance, thereby more effectively improving the lifetime of the light-emitting device prepared by the composition. On the other hand, the first electron acceptor material and / or the second electron acceptor material that meets the aforementioned conditions plays a role similar to energy recovery and retransmission throughout the energy transport process. Since the difference between S1 and T1 is small, some of the energy that cannot be directly transferred to the guest material can be quickly transferred to the first electron acceptor material and / or the second electron acceptor material that meets the aforementioned conditions, and then the energy is transferred to the guest material, thereby establishing a more effective additional multi-exciton transport channel, avoiding energy accumulation, thus avoiding quenching, and improving the lifetime of the light-emitting device prepared by the composition.

[0049] The composition described in this application, after the addition of EMOM material, exhibits a gradually decreasing LUMO energy level distribution among the electron donor material, the first electron acceptor material, and the second electron acceptor material. Multiple exciton channels exist within the composition, and exciton energy exhibits gradient transfer. Thus, charge carriers, after injection, must overcome different potential barriers to ultimately reach the guest material, similar to the formation of excitokines between EDM and EAM under the influence of charge carriers. During energy transfer to the guest material, energy is first temporarily stored in the EMOM before being transferred to the luminescent guest material. This avoids the phenomenon of incomplete and inefficient energy transfer that might occur when energy is directly transferred from the excitokine to the guest material, thereby effectively improving device lifetime and other performance characteristics.

[0050] Furthermore, regarding carrier injection, with a single host material, carriers only need to overcome the potential barrier between the transport layer and the emissive layer, and a large number of carriers will be injected into the emissive layer relatively quickly and smoothly. This makes it somewhat difficult to regulate carrier balance. However, the introduction of EMOM presents a stepped arrangement compared to the LUMO of the original EDM or EAM. After injection, carriers need to overcome different potential barriers to finally reach the emissive layer, which is equivalent to slightly reducing the transport rate. This improvement provides greater relief in device electrical balance regulation, increases the operating window, and thus reduces device performance degradation and extends device life.

[0051] It should be noted that, in this application, the enlarged operating window refers to the following: In the conventional adjustment of the electrical balance of light-emitting devices, the injection of holes or electrons into the light-emitting layer is increased or decreased. However, the electrical balance requirements of light-emitting devices of different colors, such as red, green, and blue, are different. Directly adjusting the injection of electrons / holes into the light-emitting layer is a unified adjustment under the same structure, which leads to trade-offs and makes it impossible to achieve a good balance. In this application, the charge balance is adjusted directly in the light-emitting layer, which can improve the balance trade-offs to a certain extent.

[0052] In some embodiments, the triplet energy levels of the electron donor material, the first electron acceptor material, and the exciton-modulated hybrid material are all higher than the triplet energy level of the guest material. In other words, the triplet energy level of the electron donor material is greater than the triplet energy level of the guest material, the triplet energy level of the first electron acceptor material is greater than the triplet energy level of the guest material, and the triplet energy level of the exciton-modulated hybrid material is greater than the triplet energy level of the guest material.

[0053] In some embodiments, the composition contains a main material content of 80 wt% to 98 wt%, for example, 80 wt%, 82 wt%, 83 wt%, 85 wt%, 86 wt%, 88 wt%, 90 wt%, 92 wt%, 93 wt%, 95 wt%, 96 wt%, 98 wt%, and any value or range between any two of these values; the composition contains an object material content of 2 wt% to 20 wt%, for example, 2 wt%, 3 wt%, 5 wt%, 6 wt%, 8 wt%, 10 wt%, 12 wt%, 13 wt%, 15 wt%, 16 wt%, 18 wt%, 20 wt%, and any value or range between any two of these values.

[0054] In some embodiments, the total content of the electron donor material and the first electron acceptor material in the host material is 20 wt% to 98 wt%, for example, 20 wt%, 30 wt%, 40 wt%, 50 wt%, 60 wt%, 70 wt%, 80 wt%, 90 wt%, 95 wt%, 98 wt%, and any value or range between any two of these values; the content of the exciton modulation hybrid material is 2 wt% to 80 wt%, for example, 2 wt%, 5 wt%, 10 wt%, 20 wt%, 30 wt%, 40 wt%, 50 wt%, 60 wt%, 70 wt%, 80 wt%, and any value or range between any two of these values.

[0055] In some embodiments, the mass ratio of the electron donor material to the first electron acceptor material is x:y, where 0 < x < 10, 0 < y < 10, and x + y = 10. For example, x:y can be 0.5:9.5, 1:9, 1.5:8.5, 2:8, 3:7, 4:6, 5:5, 6:4, 7:3, 8:2, 9:1, 9.5:0.5, and ratios or ranges between any two of these ratios, etc.

[0056] In some embodiments, the electron donor material is a compound represented by formula (I):

[0057] (I) Wherein, m' and n' are each independently selected from any integer from 1 to 4; Ar1 is selected from a substituted or unsubstituted benzene ring; R a 、R b Among R, m' R', and n' R'', at least one is a hole transport unit, and each of the remaining occurrences is independently selected from a substituted or unsubstituted aromatic group having 6 to 60 carbon atoms, a substituted or unsubstituted heteroaromatic group having 3 to 60 carbon atoms, or any combination of these groups; Ar1, R a 、R b 、R', R'', the substituents of the substituted ones each occur independently and are selected from D, -F, -Cl, -Br, -I, hydroxyl group, mercapto group, carboxyl group, nitro group, amino group, sulfonic acid group, silyl group, C1~C 20 alkyl group, C1~C 20 alkoxy group, C1~C 20 alkylthio group, an aryl group having 6 to 60 ring atoms, an aryloxy group having 6 to 60 ring atoms, an arylthio group having 6 to 60 ring atoms, or any combination of these groups.

[0058] In some embodiments, m' and n' are each independently selected from any integer from 1 to 2.

[0059] In some embodiments, among R a 、R b 、m' R', and n' R'', at least one is a hole transport unit, and each of the remaining occurrences is independently selected from a substituted or unsubstituted aromatic group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaromatic group having 3 to 30 carbon atoms, or any combination of these groups.

[0060] In some embodiments, Ar1, R a 、R bEach substituent described in R', R'', and R'' is independently selected from D, -F, -Cl, -Br, -I, hydroxyl, mercapto, carboxyl, nitro, amino, sulfonic acid, silyl, C1~C 10 Alkyl, C1~C 10 Alkoxy, C1~C 10 Alkyl thioyl, aryl with 6 to 30 ring atoms, aryloxy with 6 to 30 ring atoms, arylthioyl with 6 to 30 ring atoms, or any combination of these groups.

[0061] Furthermore, in some embodiments, Ar1, R a R b Each substituent described in R', R'', and R'' is independently selected from D, -F, -Cl, -Br, -I, hydroxyl, mercapto, carboxyl, nitro, amino, sulfonic acid, silyl, C1-C5 alkyl, C1-C5 alkoxy, C1-C5 alkylthio, aryl with 6 to 15 ring atoms, aryloxy with 6 to 15 ring atoms, arylthio with 6 to 15 ring atoms, or any combination of these groups.

[0062] In some embodiments, the hole transport unit is selected from one or more of the following structures:

[0063] Among them, Ar 11 Selected from aromatic groups having 6 to 40 carbon atoms, substituted or unsubstituted heteroaromatic groups having 3 to 40 carbon atoms, or any combination of these groups; Y1 and Y2 are independently selected from single bonds, N(R3), C(R3R4), Si(R3R4), O, S, C=N(R3), C=C(R3R4) or P(R3); R1, R2, R3, and R4 are each independently selected from alkyl groups having 1 to 30 carbon atoms (substituted or unsubstituted), alkoxy groups having 1 to 30 carbon atoms (substituted or unsubstituted), cycloalkyl groups having 3 to 30 carbon atoms (substituted or unsubstituted), aromatic groups having 6 to 60 cyclic atoms (substituted or unsubstituted), heteroaromatic groups having 5 to 60 cyclic atoms (substituted or unsubstituted), or any combination of these groups.

[0064] It should be noted that any of the above groups that can be linked can be used as a linking site.

[0065] As an example, in some embodiments, the electron donor material includes at least one of the compounds represented by the following structural formulas:

[0066]

[0067]

[0068]

[0069]

[0070]

[0071] .

[0072] In some embodiments, the second electron acceptor material has the structure shown in formula (II):

[0073] (II) Where m0 and n0 are each independently selected from integers from 1 to 4; X is selected from S, O, or N; Each of the following L, L1, and L2 is independently selected from a single bond, a substituted or unsubstituted aromatic group having 6 to 60 carbon atoms, a substituted or unsubstituted heteroaromatic group having 3 to 60 carbon atoms, or any combination of these groups. R c Among the m0 R''' and n0 R'''', at least one is the first electron transport unit, and each of the remaining ones is independently selected from an aromatic group with 6 to 60 substituted or unsubstituted carbon atoms, a heteroaromatic group with 3 to 60 substituted or unsubstituted carbon atoms, or any combination of these groups; L, L1, L2, R c Each substituent described in R''', R'''', is independently selected from D, -F, -Cl, -Br, -I, hydroxyl, mercapto, carboxyl, nitro, amino, sulfonic acid, silyl, C1~C 20 Alkyl, C1~C 20 Alkoxy, C1~C 20 Alkyl thioyl, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, arylthioyl with 6 to 60 ring atoms, or any combination of these groups.

[0074] In some embodiments, m0 and n0 are each independently selected from integers from 1 to 2.

[0075] In some embodiments, L, L1, and L2 are each independently selected from single bonds, substituted or unsubstituted aromatic groups having 6 to 30 carbon atoms, substituted or unsubstituted heteroaromatic groups having 3 to 30 carbon atoms, or any combination of these groups.

[0076] In some embodiments, R c Among the m0 R''' and n0 R'''', at least one is the first electron transport unit, and the others, each time appearing, are independently selected from aromatic groups with 6 to 30 substituted or unsubstituted carbon atoms, heteroaromatic groups with 3 to 30 substituted or unsubstituted carbon atoms, or any combination of these groups.

[0077] In some embodiments, L, L1, L2, R c Each substituent described in R''', R'''', is independently selected from D, -F, -Cl, -Br, -I, hydroxyl, mercapto, carboxyl, nitro, amino, sulfonic acid, silyl, C1~C 10 Alkyl, C1~C 10 Alkoxy, C1~C 10 Alkyl thioyl, aryl with 6 to 30 ring atoms, aryloxy with 6 to 30 ring atoms, arylthioyl with 6 to 30 ring atoms, or any combination of these groups.

[0078] Furthermore, in some embodiments, L, L1, L2, R c Each substituent described in R''', R'''' is independently selected from D, -F, -Cl, -Br, -I, hydroxyl, mercapto, carboxyl, nitro, amino, sulfonic acid, silyl, C1-C5 alkyl, C1-C5 alkoxy, C1-C5 alkylthio, aryl with 6 to 15 ring atoms, aryloxy with 6 to 15 ring atoms, arylthio with 6 to 15 ring atoms, or any combination of these groups.

[0079] In some embodiments, the first electron transport unit is selected from F, cyano, or one or more of the following groups:

[0080] Where a1 is 1, 2 or 3; X 1 To X 8 Each is independently selected from CR7 or N, and at least one of them is N; M 1 M 2 M 3 Each of the following can be independently represented: N(R7), C(R7R8), Si(R7R8), O, C=N(R7), C=C(R7R8), P(R7), P(=O), R7, S, S=O, SO2, or none. R5, R6, R7, and R8 are each independently selected from alkyl groups having 1 to 30 carbon atoms (substituted or unsubstituted), alkoxy groups having 1 to 30 carbon atoms (substituted or unsubstituted), cycloalkyl groups having 3 to 30 carbon atoms (substituted or unsubstituted), aromatic groups having 6 to 60 ring atoms (substituted or unsubstituted), heteroaromatic groups having 5 to 60 ring atoms (substituted or unsubstituted), or any combination of these groups.

[0081] In some embodiments, the first electron transport unit is selected from one or more combinations of the following groups:

[0082] Each occurrence of X' is independently selected from C, N, O, or S, and at least one X' in each group is N.

[0083] In some embodiments, the first electron acceptor material has the compound shown in (III):

[0084] (III) Where m1 is selected from integers from 1 to 6; A is the second electronic transport unit; Ar2 is selected from aromatic groups with 6-60 substituted or unsubstituted carbon atoms, heteroaromatic groups with 3-60 substituted or unsubstituted carbon atoms, or any combination of these groups.

[0085] In some of these embodiments, the second electron transport unit is selected from F, cyano, or one or more of the following groups:

[0086] in b1 is 1, 2, or 3; Y 1 To Y 8 Each independently selected from CR 11 Or N, and at least one of them is N; N 1 N 2 N 3 Represent N(R) independently 11 ), C(R 11 R 12 ), Si(R) 11 R 12 O, C=N(R) 11 ), C=C(R) 11 R 12 ), P(R 11 ), P(=O) R 11 S, S=O, SO2 or none; R9, R 10 R 11 R 12 The groups are individually selected from alkyl groups having 1 to 30 carbon atoms (substituted or unsubstituted), alkoxy groups having 1 to 30 carbon atoms (substituted or unsubstituted), cycloalkyl groups having 3 to 30 carbon atoms (substituted or unsubstituted), aromatic groups having 6 to 60 cyclic atoms (substituted or unsubstituted), heteroaromatic groups having 5 to 60 cyclic atoms (substituted or unsubstituted), or any combination of these groups.

[0087] It should be noted that "absent" means that this group is not present and the benzene rings are not connected.

[0088] In at least some embodiments, the second electron transport unit is selected from at least one of the following groups:

[0089] Each occurrence of X'' is independently selected from C, N, O, or S, and at least one X'' in each group is selected from N.

[0090] It should be noted that any of the above groups that can be linked can be used as a linking site.

[0091] As an example, in some embodiments, the first electron acceptor material comprises at least one of the compounds shown in the following structural formulas:

[0092]

[0093]

[0094]

[0095]

[0096]

[0097]

[0098]

[0099]

[0100] .

[0101] In some embodiments, the second electron acceptor material comprises at least one of the compounds shown in the following structural formulas:

[0102]

[0103]

[0104]

[0105]

[0106]

[0107]

[0108]

[0109]

[0110]

[0111]

[0112]

[0113]

[0114]

[0115]

[0116]

[0117]

[0118]

[0119]

[0120]

[0121]

[0122]

[0123]

[0124]

[0125]

[0126]

[0127]

[0128]

[0129]

[0130]

[0131]

[0132] .

[0133] The guest material is selected from one or more of phosphorescent guest materials (PGD), fluorescent guest materials, and narrow-spectrum thermally activated delayed fluorescence (TADF) luminescent guest materials (FGD).

[0134] The phosphorescent guest material may be selected from, but is not limited to, one or more of iridium-containing phosphorescent guest materials and platinum-containing phosphorescent guest materials. As an example, in some embodiments, the iridium-containing phosphorescent guest material may be selected from, but is not limited to, one or more of Ir(ppy)3 (tris[2-phenylpyridine]iridium(III)), Ir(mppy)3 (tris[2-(p-tolyl)pyridine]iridium(III), CAS: 149005-33-4), Ir(ppy)2acac (bis(2-phenylpyridine)iridium acetylacetonate), and Firpic (bis(4,6-difluorophenylpyridine-N,C2)pyridineformyliridium).

[0135] The fluorescent luminescent guest material may be selected from, but is not limited to, one or more of, 5,12-dimethylquinacridone (DMQA), 8-hydroxyquinoline aluminum (Alq3), 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljuronidinyl-4-vinyl)-4H-pyran (DCJTB), the red dye 3-(dicyanomethylene)-5,5-dimethyl-1-(4-dimethylamino-styryl)cyclohexene (DCDDC), and the red dye 2-[2-isopropyl-6-[2-(2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H-benzo[ij]quinazin-9-yl)vinyl]-4H-pyran-4-ylidene]malonium (DCJTI).

[0136] The narrow-spectrum thermally activated delayed fluorescence luminescent guest can be IID2BN (see doi.org / 10.1002 / anie.202313254), 10-(2,12-di-tert-butyl-5,9-dioxa-13b-borona[3,2,1-de]anthracene-7-yl)-9,9-dimethyl-9,10-dihydroacridine (abbreviated as TDBA–Ac), or 5-(2,12-di-tert-butyl-5,9-dioxa-13b-borona[3,2,1-de]anthracene-7-yl) -10,15-Diphenyl-10,15-dihydro-5H-diindole[3,2-a:3',2'-c]carbazole (abbreviated as TDBA–DI), 9'-(2,12-di-tert-butyl-5,9-dioxa-13b-boronaphthyl-[3,2,1de]anthracene-7-yl)-9,9'-diphenyl-9H,9'H,9'-H-3,3':6',3'-dicarbazole (abbreviated as TB-P3Cz), 10,10'-(4,4'-sulfonylbis(4,1-phenylene))bis(9,9 (-Dimethyl-9,10-dihydroacrylidine) (abbreviated as DMAC-DPS), 9'-[4-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-3,3”, 6,6'-tetraphenyl-9,3':6',9'-tert-9H-carbazole (abbreviated as BDPCC-TPTA), (9'-(2,12-di-tert-butyl-5,9-dioxa-13b-borona[3,2,1-de]anthracene-7-yl)-9'H-9,3':6',9'-dicarbazole (abbreviated as TB-) One or more of the following: 3Cz), 5-(3,11-dimethyl-5,9-dioxa-13b-borona[3,2,1-de]anthracene-7-yl)-10,15-diphenyl-10,15-dihydro-5H-diindol[3,2-a:3',2'-c]carbazole (abbreviated as mMDBA-DI), and 3,11-bis(1,3,6,8-tetramethyl-9H-carbazole-9-yl)-5,9-dioxa-13b-borona[3,2,1-de]anthracene (abbreviated as DBA-DTMCz).

[0137] The structural formulas for PGD(Ir(mppy)3) and FGD(IDID2BN) are as follows: ,

[0138] Ir(mppy)3、IDID2BN Secondly, embodiments of this application also provide a mixture comprising a solvent and the composition described above.

[0139] The composition in the mixture is present in an amount of 0.3–30 wt%, for example, 0.3 wt%, 1 wt%, 3 wt%, 5 wt%, 6 wt%, 8 wt%, 10 wt%, 13 wt%, 15 wt%, 18 wt%, 20 wt%, 22 wt%, 25 wt%, 26 wt%, 28 wt%, 30 wt%, and any values ​​or ranges between any two of these values. Within the concentration range, the mixture can exhibit good film-forming properties.

[0140] The solvent may include, but is not limited to, one or more of aromatic or heteroaromatic compounds, aromatic esters, alkanes, ethers, ketones, and amines.

[0141] The aromatic or heteroaromatic compounds may include, but are not limited to, diisopropylbenzene, pentobenzene, tetrahydronaphthalene, cyclohexylbenzene, chloronaphthalene, 1,4-dimethylnaphthalene, 3-isopropylbiphenyl, p-methylisopropylbenzene, dipentylbenzene, tripentylbenzene, pentyltoluene, o-diethylbenzene, m-diethylbenzene, p-diethylbenzene, 1,2,3,4-tetramethylbenzene, 1,2,3,5-tetramethylbenzene, 1,2,4,5-tetramethylbenzene, butylbenzene, dodecylbenzene, dihexylbenzene, dibutylbenzene, p-diisopropylbenzene, cyclohexylbenzene, benzylbutylbenzene, dimethylnaphthalene, 3- One or more of the following: isopropylbiphenyl, p-methylisopropylbenzene, 1-methylnaphthalene, 1,2,4-trichlorobenzene, 4,4-difluorodiphenylmethane, 1,2-dimethoxy-4-(1-propenyl)benzene, diphenylmethane, 2-phenylpyridine, 3-phenylpyridine, N-methyldiphenylamine, 4-isopropylbiphenyl, α,α-dichlorodiphenylmethane, 4-(3-phenylpropyl)pyridine, 1,1-bis(3,4-dimethylphenyl)ethane, 2-isopropylnaphthalene, quinoline, isoquinoline, methyl 2-furanoate, and ethyl 2-furanoate.

[0142] The aromatic ester compounds may include, but are not limited to, ethyl acetate, butyl acetate, amyl acetate, alkyl benzoate, alkyl octanoate, alkyl sebacate, alkyl stearate, alkyl phenylacetate, alkyl cinnamate, alkyl oxalate, alkyl maleate, alkyl lactone, and alkyl oleate (alkyl groups may be methyl, ethyl, propyl, butyl, pentyl, hexyl, dodecyl, heptadecanyl, including their isomers; specific examples include methyl benzoate, ethyl benzoate, propyl benzoate, and benzoic acid). Butyl benzoate, pentyl benzoate, etc.), alkylated benzoate (the alkylating group can be p-methyl, p-ethyl, p-propyl, p-tert-butyl, 3-ethoxy; the alkyl group can be methyl, ethyl, propyl, butyl, pentyl, hexyl, dodecyl, heptadecanyl, including its isomers; specific examples can be, for example, methyl p-methylbenzoate, ethyl p-methylbenzoate, butyl p-methylbenzoate, ethyl p-ethylbenzoate, methyl 3-ethoxybenzoate, ethyl p-tert-butylbenzoate, etc.) one or more of these.

[0143] The alkane compounds may include, but are not limited to, one or more of the following: n-octane, n-pentane, n-hexane, cyclohexane, phenylcyclohexane, dodecane, and decane.

[0144] The ether compounds may include, but are not limited to, one or more of glycidyl phenyl ether, dibenzyl ether, 4-tert-butylanisole, trans-p-propenylanisole, diphenyl ether, 2-phenoxymethyl ether, 2-phenoxytetrahydrofuran, ethyl-2-naphthyl ether, pentanyl ether, hexyl ether, dioctyl ether, ethylene glycol dibutyl ether, diethylene glycol diethyl ether, diethylene glycol butyl methyl ether, diethylene glycol dibutyl ether, triethylene glycol dimethyl ether, triethylene glycol ethyl methyl ether, triethylene glycol butyl methyl ether, tripropylene glycol dimethyl ether, and tetraethylene glycol dimethyl ether.

[0145] The ketone compounds may include, but are not limited to, 1-tetrahydronaphthone, 2-tetrahydronaphthone, 2-(phenylepoxy)tetrahydronaphthone, 6-(methoxy)tetrahydronaphthone, acetophenone, phenylacetone, benzophenone, and derivatives of the solvents described above. As an example, the derivatives may be selected from, but are not limited to, 4-methylacetophenone, 3-methylacetophenone, 2-methylacetophenone, 4-methylacetophenone, 3-methylacetophenone, 2-methylacetophenone, 2-nonanone, 3-nonanone, 5-nonanone, 2-decanone, 2,5-hexanedione, 2,6,8-trimethyl-4-nonanone, frankincense, phorone, isophorone, di-n-pentyl ketone, and one or more of these.

[0146] The amine compounds may include, but are not limited to, one or more of aniline, dimethylacetamide, ethylenediamine, octadeceneamine, ethanolamine, and N,N-dimethylformamide.

[0147] It is understood that when the luminescent ink is a solution or suspension, the luminescent ink may also include one or more additives, including but not limited to one or more of surfactants, lubricants, wetting agents, dispersants, hydrophobic agents and adhesives.

[0148] Furthermore, the luminescent ink can be an ink, and the solvent can be a solvent with a Hansen solubility parameter within the following range: δd (dispersion force) is in the range of 17.0 to 23.2 MPa1 / 2, especially in the range of 18.5 to 21.0 MPa1 / 2; δp (polar force) is in the range of 0.2 to 12.5 MPa1 / 2, especially in the range of 2.0 to 6.0 MPa1 / 2; δh (hydrogen bond force) is in the range of 0.9 to 14.2 MPa1 / 2, especially in the range of 2.0 to 6.0 MPa1 / 2.

[0149] According to the luminescent ink of this application, the solvent must be selected with its boiling point parameter in mind. In some embodiments of this application, the boiling point of the solvent is not less than 150°C, for example, not less than 180°C, not less than 200°C, not less than 250°C, not less than 275°C, or not less than 300°C, which helps to prevent the "nozzle clogging" problem of the inkjet printhead and improves the film quality.

[0150] When luminescent ink is used in printing processes, its viscosity and surface tension are important parameters. Suitable surface tension parameters for luminescent ink are appropriate for specific substrates and printing methods. In some embodiments, the surface tension of the luminescent ink according to this application embodiment ranges from 19 dyne / cm to 60 dyne / cm at operating temperature or 25°C, for example, 22 dyne / cm to 55 dyne / cm, or 25 dyne / cm to 40 dyne / cm, or 30 dyne / cm to 40 dyne / cm. In some embodiments, the viscosity of the luminescent ink according to this application embodiment ranges from 1 cps to 100 cps at operating temperature or 25°C, for example, 1 cps to 10 cps, 1 cps to 50 cps, or 1.5 cps to 20 cps, or 2.0 cps to 15 cps. Such formulated luminescent ink is advantageous for inkjet printing.

[0151] This application also provides a light-emitting thin film, which includes the composition described above. It is understood that the preparation methods for each functional layer in the light-emitting device include, but are not limited to, chemical and / or physical methods. Chemical methods include, but are not limited to, one or more of chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods include, but are not limited to, physical deposition and solution methods. Physical deposition methods include, but are not limited to, one or more of thermal evaporation deposition, electron beam evaporation deposition, magnetron sputtering, multi-arc ion deposition, physical vapor deposition, atomic layer deposition, and pulsed laser deposition. Solution methods include, but are not limited to, one or more of spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spray coating, roller coating, casting, slot coating, and strip coating. After the various functional layers of the optoelectronic device are fabricated, an encapsulation process is required. Encapsulation can be performed using conventional machine encapsulation or manual encapsulation. In the encapsulation environment, both oxygen and water content must be below 0.1 ppm to ensure the stability of the optoelectronic device. Specifically, the encapsulation material used to form the encapsulation layer is selected from one or more of ultraviolet adhesive, metal thin film, and glass adhesive. As an example, the encapsulation material is acrylic resin or epoxy resin. In at least one embodiment, the film-forming process is a solution method, where the film is prepared from the aforementioned mixture through a film-forming process. The film-forming process can be spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spray coating, roller coating, casting, slot coating, and strip coating, etc.

[0152] Thirdly, please refer to Figure 1 This application also provides a light-emitting device 100, including an anode 10, a light-emitting layer 20 and a cathode 30, wherein the material of the light-emitting layer 20 includes the above-described composition.

[0153] Please see Figure 2 In one embodiment, the light-emitting device 100 further includes a hole transport layer 40 located between the anode 10 and the light-emitting layer 20. In other words, the light-emitting device 100 includes an anode 10, a hole transport layer 40, a light-emitting layer 20, and a cathode 30 stacked sequentially.

[0154] In one embodiment, the light-emitting device 100 further includes a hole injection layer 50 located between the anode 10 and the hole transport layer 40.

[0155] In one embodiment, the light-emitting device 100 further includes an electron transport layer 60 located between the light-emitting layer 20 and the cathode 30.

[0156] In one embodiment, the light-emitting device 100 further includes an electron injection layer 70 located between the electron transport layer 60 and the cathode 30.

[0157] The anode 10 and the cathode 30 are electrodes known in the art for use in light-emitting devices. For example, they can be, independently, but not limited to, doped metal oxide electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, elemental metal electrodes, or alloy electrodes. The material of the doped metal oxide electrode can be, but not limited to, one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), zinc-doped indium oxide (IZO), magnesium-doped zinc oxide (MZO), aluminum-doped magnesium oxide (AMO), and cadmium-doped zinc oxide. The composite electrode is an electrode formed by stacking two or more layers of conductive materials, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / APC / ITO, IZO / Ag / IZO, IZO / APC / IZO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc., where " / " indicates a stacked structure. For example, AZO / Ag / AZO represents a composite electrode that includes sequentially stacked AZO, Ag, and AZO layers. The material of the elemental metal electrode may include, but is not limited to, one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg, and Ba. The alloy electrode includes, but is not limited to, Au:Mg alloy electrode and Ag:Mg alloy electrode.

[0158] In some embodiments, the anode is an electrode with a relatively high work function, such as, but not limited to, a doped metal oxide electrode with a relatively high work function, a metal element electrode with a relatively high work function, and a carbon nanotube electrode. The metal element electrode with the high work function can be selected from, but is not limited to, Ni, Pt, Au, Ag, Ir, etc.

[0159] In some embodiments, the cathode is an electrode with a relatively low work function, such as, but not limited to, a metallic elemental electrode, a composite electrode, and an alloy electrode with a relatively low work function. The metallic elemental electrode with a relatively low work function can be Ca, Ba, Al, Mg, etc. The composite electrode with a relatively low work function can be Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc. The alloy electrode with a relatively low work function can be Au:Mg and Ag:Mg, etc.

[0160] The material of the hole transport layer 40 can be any material known in the art for hole transport layers, or it can be a commercially available hole transport material, for example, selected from, but not limited to, NHT-1 (manufactured by Novaled), HTM014 (manufactured by Merck), HTM081 (manufactured by Merck), HTM163 (manufactured by Merck), HTM222 (manufactured by Merck), NHT-5 (manufactured by Novaled), NHT-18 (manufactured by Novaled), and NHT-49 (manufactured by Novaled). (manufactured by [Company Name]), NHT-51 (manufactured by Novaled), EL-301 (manufactured by Hodogaya), EL-22T (manufactured by Hodogaya), 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4''-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N, N'bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tris(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1, 1'-Biphenyl-4-4'-diamine (NPB), spiroNPB, poly(phenylenevinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MOMO-PPV), 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazole-9-yl)benzene (MCP), polyaniline, polypyrrole, poly(p)phenylenevinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazole)-1,The following are included in the following categories: 1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylates and their derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, second-doped metal oxide particles, second-undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the second-doped and second-undoped metal oxide particles each independently include, but are not limited to, one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5. The doping elements in the second-doped metal oxide particles include, but are not limited to, one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfides include, but are not limited to, one or more of CuS, MoS3, and WS3. The metal selenides include, but are not limited to, one or more of MoSe3 and WSe3. The metal nitrides include, but are not limited to, p-type gallium nitride.

[0161] The material of the hole injection layer 50 can be any material known in the art for hole injection layers, such as one or more of high-conductivity organic molecular materials, transition metal oxides, and transition metal sulfide compounds; the high-conductivity organic molecular material is selected from NDP-2 (manufactured by Novaled), NDP-9 (manufactured by Novaled), F4-TCNQ, F6-TCNNQ, poly(3,4-ethylenedioxythiophene), poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid (PEDOT:PSS), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethane, 2,3,6,7,1 0,11-Hexacyano-1,4,5,8,9,12-Hexaazabenzophenanthrene, copper polyester carbonate, free phthalocyanine (H2PC), copper phthalocyanine (CuPc), platinum phthalocyanine (PtPC), titanium phthalocyanine (TiOPC), 2,3,6,7,10,11-Hexacyano-1,4,5,8,9,12-Hexaazabenzophenanthrene (HAT-CN), 7,7,8,8-Tetracyano-p-benzoquinone dimethyl ether (TCNQ), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-di-1-naphthyl-biphenyl-4,4'-diamine (NPB-DPA), N,N'-diphenyl-N,N'-di(4'-(N,N-di( 1-Naphthyl)-amino)-4-biphenyl)-benzidine (Di-NPB), N,N'-di(phenyl)-N,N'-di(4'-(N,N-di(phenylamino)-4-biphenyl)benzidine (TPT1), N,N'-diphenyl-N,N'-di-[4-(N,N-di-p-tolylamino)phenyl]benzidine (NTNPB), N4,N4,N4',N4'-tetra(4-methoxyphenyl)-[1,1'-biphenyl]-4,4'-diamine (MeO-TPD), 4,4',4''-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), 4,4'4" ...3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), 4,4'4"-tris(3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), 4,4'4"-tris(3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), 4,4'4"-tris(3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), 4,4'4"-tris(3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), 4,4'4 One or more of (N,N-diphenylamino)triphenylamine (NATA), N2,N2'-(9,9-dimethyl-9H-fluorene-2,7-diyl)bis(9,9-dimethyl-N2,N7,N7-triphenyl-9H-fluorene-2,7-diamine) (3DMFL-BPA), and 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (F4-TCNQ); the transition metal oxide is selected from one or more of NiO, MoO3, WO3, CuO, and Cu2O; the transition metal chalcogenide compound is selected from one or more of MoS2, MoSe2, WS3, WSe3, and CuS.

[0162] The material of the electron transport layer 60 is a material known in the art for use in electron transport layers, and can also be a commercially available electron transport material, for example, selected from, but not limited to, one or more inorganic and organic electron transport materials. The inorganic electron transport material includes one or more of the following: first doped metal oxide particles, first undoped metal oxide particles, non-metallic nitrides, group IIB-VIA semiconductor materials, group IIIA-VA semiconductor materials, and group IB-IIIA-VIA semiconductor materials. The material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and HfO3. The metal oxide in the first doped metal oxide particles includes ZnO, TiO2, SnO2, ZrO2, Ta2O5, and HfO3. The first doped metal oxide particles contain one or more of Al2O3, and the doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Cd, and Cs. The non-metallic nitride includes Si3N4. The IIB-VIA group semiconductor material includes one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor material includes one or more of InP and GaP. The IB-IIIA-VIA group semiconductor material includes one or more of CuInS and CuGaS.The organic electron transport materials include NET-164 (manufactured by Novaled), NDN-87 (manufactured by Novaled), NDN-45 (manufactured by Novaled), NDN-18 (manufactured by Novaled), NDN-218 (manufactured by Novaled), and ET093 (manufactured by Idemitsu). (Manufactured by Kosan), ETM020 (manufactured by Merck), ETM033 (manufactured by Merck), ETM034 (manufactured by Merck), ETM036 (manufactured by Merck), diphenyl[4-(triphenylsilyl)phenyl]oxyphosphine (TSPO1), 1,3,5-tris((3-pyridyl)-3-phenyl)benzene (TmPyPB), 2-(4-biphenyl)-5-phenyloxadiazole (PBD), bis(10-hydroxybenzo[h]quinoline)beryllium (Bebq2) (CAS: 148896-39-3), 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (TAZ), 2,7-bis(diphenyloxyphosphine)-9,9'-spirobis[fluorene] (SPPO13), 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)phenyl (TPBI), 4,6-bis(3,5-di(3-pyridylphenyl)-2-methylpyrimidine (B3PYMPM), 4,7-diphenyl-1,10-phenanthroline (BPhen), 2-(4'-tert-butylphenyl)-5-(4'-biphenyl)-1,3,4-oxadiazole, 2,9-dimethyl-4,7-diphenyl-1,10-o-diazaphenanthroline, 4,7-diphenyl-1,10-o-diazaphenanthroline, bis(2-methyl-8-hydroxyquinoline-N1,O8)-1,1'-biphenyl-4-hydroxy)aluminum, 8-hydroxyquinoline aluminum (Alq3), 8-hydroxyquinoline lithium (Liq), 2,7-bis(diphenyloxy) Phospho-9,9'-spirobis[fluorene], poly[9,9-dioctylfluorene-9,9-bis(N,N-dimethylaminopropyl)fluorene], 9,9-bis[3'-(N,N-dimethylamino)propyl-2,7-fluorene]-alternating-2,7-(9,9-dioctylfluorene), 1,3-bis[5-(4-tert-butylphenyl)-2-[1,3,4]oxadiazolyl]benzene (OXD-7), 3',3'",3'""-(1,3,5-triazine-2,4,6-triyl)-tris(([1,1'-biphenyl]-3-carboxynitrile)) (CNT2T), 2,4,6-tris[3-(diphenylphosphoxy)phenyl]-1,3,5-triazole (POT2T, CAS: 1646906-26-4) or one or more of these.

[0163] The material of the electron injection layer 70 can be any material known in the art for use in electron injection layers, such as one or more selected from, but not limited to, Yb (ytterbium), YF3 (yttrium fluoride), Li, LiF, NaF, CsCO3, Cs, KBH4, and KH.

[0164] It is understood that the light-emitting device 100 may also be provided with some functional layers that are conventionally used in light-emitting devices and help to improve the performance of the light-emitting device, such as electron blocking layer, hole blocking layer, interface modification layer, etc.

[0165] It is understood that the materials of each layer of the light-emitting device 100 can be adjusted according to the light-emitting requirements of the light-emitting device 100.

[0166] In some embodiments, the light-emitting device 100 further includes a substrate disposed on the side of the anode 10 away from the light-emitting layer 20, or the substrate disposed on the side of the cathode 30 away from the light-emitting layer 20.

[0167] The substrate can be a rigid substrate or a flexible substrate. In some embodiments, the substrate material may include, but is not limited to, one or more of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, and polyethersulfone.

[0168] It is understood that the light-emitting device 100 can be a normally positioned light-emitting device or an inverted light-emitting device. The light-emitting device 100 can be an organic light-emitting device.

[0169] The light-emitting layer 20 of the light-emitting device 100 includes the composition described in this application, thereby having a longer lifespan.

[0170] Fourthly, this application also relates to a display device, which includes the light-emitting device 100.

[0171] The display device can be any electronic product with display function, including but not limited to smartphones, tablets, laptops, digital cameras, digital camcorders, smart wearable devices, smart weighing scales, in-vehicle displays, televisions, or e-book readers. Among them, smart wearable devices can be, for example, smart bracelets, smartwatches, virtual reality (VR) headsets, etc.

[0172] The present application will be specifically described below through specific embodiments. These embodiments are only some embodiments of the present application and are not intended to limit the present application. Unless otherwise specified, the raw materials used in the following embodiments are all commercially available products.

[0173] Example 1 Provides IZO / Ag / IZO anode 10, with each layer having a thickness of 15 nm / 110 nm / 75 nm respectively; A mixture of NHT-51 (Novaled):NDP-9 (Novaled) material was deposited on the anode 10 and annealed at 230°C for 20 min to obtain a hole injection layer 50 with a thickness of 50 nm. NHT-51 (Novaled) material was deposited on the hole injection layer 50 and annealed at 230°C for 30 min to obtain a hole transport layer 40 with a thickness of 35 nm. A mixture is deposited on the hole transport layer 40 and annealed at 140°C for 20 min to obtain a light-emitting layer 20 with a thickness of 55 nm. The mixture includes a composition and the solvent toluene. The composition includes a host material and a guest material. The host material includes EDM, EAM and EMOM. The guest material includes Ir(mppy)3 (PGD) and IDID2BN (FGD). The EDM, EAM and EMOM are selected from EDM1 and EMOM1, respectively. The content of the composition in the mixture is 15 wt%, the mass ratio of host material to guest material is 9:1, the mass ratio of EDM to EAM is 5:5, the content of EMOM in the host material is 50 wt%, and the mass ratio of PGD to FGD is 99.5:0.5. The substrate is transferred to a vacuum level of 9*10. -7 In the vacuum chamber of torr, an ETM036(Merck):LiQ(8-hydroxyquinoline lithium) mixed material is deposited on the light-emitting layer 20 to obtain an electron transport layer 60 with a thickness of 30 nm. Yb is deposited on the electron transport layer to obtain an electron injection layer 70 with a thickness of 1 nm; Ag is deposited on the electron injection layer 70 to obtain a cathode 30 with a thickness of 18 nm; CR163 (Hua Rui Optoelectronics) is deposited on the cathode 30 to form a light extraction layer with a thickness of 80 nm, thus obtaining the light-emitting device 100.

[0174] Example 2 This embodiment is basically the same as embodiment 1, except that EMOM2 is used to replace EMOM1 in embodiment 1.

[0175] Example 3 This embodiment is basically the same as embodiment 1, except that EMOM5 is used in this embodiment to replace EMOM1 in embodiment 1.

[0176] Example 4 This embodiment is basically the same as embodiment 1, except that EMOM6 is used to replace EMOM1 in embodiment 1.

[0177] Example 5 This embodiment is basically the same as embodiment 1, except that EMOM7 is used in this embodiment to replace EMOM1 in embodiment 1.

[0178] Example 6 This embodiment is basically the same as embodiment 1, except that EMOM9 is used in this embodiment to replace EMOM1 in embodiment 1.

[0179] Example 7 This embodiment is basically the same as embodiment 1, except that EMOM16 is used in this embodiment to replace EMOM1 in embodiment 1.

[0180] Example 8 This embodiment is basically the same as embodiment 1, except that EMOM23 is used to replace EMOM1 in embodiment 1.

[0181] Example 9 This embodiment is basically the same as embodiment 1, except that EMOM28 is used to replace EMOM1 in embodiment 1.

[0182] Example 10 This embodiment is basically the same as embodiment 1, except that EMOM33 is used to replace EMOM1 in embodiment 1.

[0183] Example 11 This embodiment is basically the same as embodiment 1, except that EMOM38 is used to replace EMOM1 in embodiment 1.

[0184] Example 12 This embodiment is basically the same as embodiment 1, except that EMOM44 is used to replace EMOM1 in embodiment 1.

[0185] Example 13 This embodiment is basically the same as embodiment 1, except that EMOM52 is used to replace EMOM1 in embodiment 1.

[0186] Example 14 This embodiment is basically the same as embodiment 1, except that EMOM63 is used to replace EMOM1 in embodiment 1.

[0187] Example 15 This embodiment is basically the same as embodiment 1, except that EMOM71 is used to replace EMOM1 in embodiment 1.

[0188] Example 16 This embodiment is basically the same as embodiment 1, except that EMOM81 is used to replace EMOM1 in embodiment 1.

[0189] Example 17 This embodiment is basically the same as embodiment 1, except that EMOM88 is used to replace EMOM1 in embodiment 1.

[0190] Example 18 This embodiment is basically the same as embodiment 1, except that EMOM91 is used to replace EMOM1 in embodiment 1.

[0191] Example 19 This embodiment is basically the same as embodiment 1, except that EMOM99 is used in this embodiment to replace EMOM1 in embodiment 1.

[0192] Example 20 This embodiment is basically the same as embodiment 1, except that EMOM101 is used to replace EMOM1 in embodiment 1 in this embodiment.

[0193] Example 21 This embodiment is basically the same as embodiment 1, except that EMOM107 is used to replace EMOM1 in embodiment 1.

[0194] Example 22 This embodiment is basically the same as embodiment 1, except that EMOM116 is used to replace EMOM1 in embodiment 1 in this embodiment.

[0195] Example 23 This embodiment is basically the same as embodiment 1, except that EMOM129 is used to replace EMOM1 in embodiment 1.

[0196] Example 24 This embodiment is basically the same as embodiment 1, except that EMOM132 is used to replace EMOM1 in embodiment 1.

[0197] Example 25 This embodiment is basically the same as Embodiment 1, except that the exciton modulation hybrid material in this embodiment includes EMOM2 and EMOM20, and the mass ratio of EMOM2 and EMOM20 is 1:1.

[0198] Example 26 This embodiment is basically the same as Embodiment 1, except that the exciton modulation hybrid material in this embodiment includes EMOM30, EMOM40 and EMOM58, and the mass ratio of EMOM30, EMOM40 and EMOM58 is 1:1:1.

[0199] Example 27 This embodiment is basically the same as Embodiment 1, except that the exciton modulation hybrid material in this embodiment includes EMOM46, EMOM76, EMOM85 and EMOM90, and the mass ratio of EMOM46, EMOM76, EMOM85 and EMOM90 is 1:1:1:1.

[0200] Example 28 This embodiment is basically the same as Embodiment 1, except that the exciton modulation hybrid material in this embodiment includes EMOM35, EMOM48, EMOM73, EMOM83 and EMOM130, and the mass ratio of EMOM35, EMOM48, EMOM73, EMOM83 and EMOM130 is 1:1:1:1:1.

[0201] Example 29 This embodiment is basically the same as Embodiment 1, except that the exciton modulation hybrid material in this embodiment includes EMOM95, EMOM102, EMOM110, EMOM120, EMOM125 and EMOM129, and the mass ratio of EMOM95, EMOM102, EMOM110, EMOM120, EMOM125 and EMOM129 is 1:1:1:1:1:1.

[0202] Example 30 This embodiment is basically the same as embodiment 1, except that EDM4 is used in this embodiment to replace EDM1 in embodiment 1.

[0203] Example 31 This embodiment is basically the same as embodiment 1, except that EDM6 is used in this embodiment to replace EDM1 in embodiment 1.

[0204] Example 32 This embodiment is basically the same as embodiment 1, except that EDM10 is used in this embodiment to replace EDM1 in embodiment 1.

[0205] Example 33 This embodiment is basically the same as embodiment 1, except that EDM18 is used instead of EDM1 in embodiment 1.

[0206] Example 34 This embodiment is basically the same as embodiment 1, except that EDM23 is used to replace EDM1 in embodiment 1.

[0207] Example 35 This embodiment is basically the same as embodiment 1, except that EAM6 is used to replace EAM1 in embodiment 1.

[0208] Example 36 This embodiment is basically the same as embodiment 1, except that EAM14 is used to replace EAM1 in embodiment 1.

[0209] Example 37 This embodiment is basically the same as embodiment 1, except that EAM17 is used to replace EAM1 in embodiment 1.

[0210] Example 38 This embodiment is basically the same as embodiment 1, except that EAM24 is used instead of EAM1 in embodiment 1.

[0211] Example 39 This embodiment is basically the same as embodiment 1, except that in this embodiment, EAM35 is used instead of EAM1 in embodiment 1.

[0212] Example 40 This embodiment is basically the same as Embodiment 1, except that the content of EMOM in the main material in this embodiment is 2 wt%.

[0213] Example 41 This embodiment is basically the same as Embodiment 1, except that the content of EMOM in the main material in this embodiment is 80 wt%.

[0214] Example 42 This embodiment is basically the same as embodiment 1, except that the mass ratio of EDM:EAM in this embodiment is 9.5:0.5.

[0215] Example 43 This embodiment is basically the same as Embodiment 1, except that the mass ratio of EDM:EAM in this embodiment is 0.5:9.5.

[0216] Example 44 This embodiment is basically the same as Embodiment 1, except that in this embodiment, the mass ratio of the main material to the guest material in the composition is 8:2.

[0217] Example 45 This embodiment is basically the same as Embodiment 1, except that in this embodiment, the mass ratio of the main material to the guest material in the composition is 9.8:0.2.

[0218] Comparative Example 1 This embodiment is basically the same as Embodiment 1, except that exciton modulation hybrid materials are not included in this comparative example.

[0219] Comparative Example 2 This embodiment is basically the same as Embodiment 1, except that the main materials in this comparative example include EDM1 and EMOM1.

[0220] Comparative Example 3 This embodiment is basically the same as Embodiment 1, except that EAM36 replaces EAM1 in Embodiment 1 and EMOM30 replaces EMOM1 in Embodiment 1 in this comparative example.

[0221] In Examples 1-45 and Comparative Examples 1-3, the LUMO and HOMO energy levels of the electron donor material are shown in Table 1 below, the LUMO, HOMO, singlet state S1, and triplet state T1 of the first electron acceptor material are shown in Table 2 below, and the LUMO, HOMO, singlet state S1, and triplet state T1 of the second electron acceptor material are shown in Table 3 below.

[0222] The method for determining the HOMO and LUMO energy levels is as follows: using TD-DFT (time-dependent density functional theory) via Gaussian 09W (Gaussian Inc.), the molecular geometry is first optimized using the semi-empirical method "Ground State / Semi-empirical / Default Spin / AM1" (Charge 0 / Spin Singlet). Then, the energy structure of the organic molecule is calculated by TD-DFT (time-dependent density functional theory) to obtain "TD-SCF / DFT / Default Spin / B3PW91" and the basis set "6-31G(d)" (Charge 0 / Spin Singlet).

[0223] The HOMO and LUMO energy levels are calculated according to the following calibration formula: HOMO(eV) = ((HOMO(G)×27.212)-0.9899) / 1.1206; LUMO(eV) = ((LUMO(G)×27.212)-2.0041) / 1.385.

[0224] The energy level of S1 was obtained using room temperature fluorescence spectroscopy, and the energy level of T1 was obtained using low temperature (77K) phosphorescence spectroscopy. Both room temperature fluorescence spectroscopy and low temperature phosphorescence spectroscopy were performed using a fluorescence spectrometer, and the low temperature phosphorescence spectroscopy required a liquid nitrogen environment.

[0225] Table 1:

[0226] Table 2:

[0227] Table 3:

[0228] The color coordinates, current efficiency CE@1000nit, and current density of 10mA / cm² of the light-emitting devices of Examples 1-45 and Comparative Examples 1-3 were measured. 2 The voltage (voltage@J10) and lifespan T95@1000nit were tested, and the test results are shown in Table 4.

[0229] Among them, the current efficiency CE@1000nit and voltage@J10 were measured using the Fostar FPD optical characteristic measurement equipment. The efficiency testing system was built by controlling the QE PRO spectrometer, Keithley 2400 and Keithley 6485 through LabVIEW to measure parameters such as voltage, current, brightness and emission spectrum, and the current efficiency was calculated.

[0230] The T95 lifetime test method is as follows: Under constant current density, the time required for the device's brightness to decrease to a certain percentage of its maximum brightness is defined as T95. This lifetime is the measured lifetime. To shorten the testing cycle, device lifetime testing is usually performed at high brightness by accelerating device aging, and the lifetime at high brightness is obtained by fitting the extended exponential decay brightness decay formula. For example, the lifetime at 1000 nits is measured as T95@1000nits. The specific calculation formula is as follows:

[0231] Among them, T95 L T95's equivalent lifespan is 1000 nits. H For the measured lifetime at a certain constant current density, L H L represents the actual brightness of the device at a certain constant current density. L The lifetime of the green OLED devices was measured in this experiment, with a constant current density of 25 mA / cm². The value was 1000 nits, and A was the acceleration factor. 2The value of A is 1.7.

[0232] Table 4:

[0233] Compared to the light-emitting devices of Comparative Examples 1-2, the light-emitting devices of Examples 1-45 have similar color coordinates, similar voltages @J10, better current efficiency, and significantly longer lifetimes. It is evident that light-emitting devices using the composition of this application as the light-emitting layer material can achieve higher current efficiency and longer lifetimes while maintaining a good voltage @J10. This may be because the composition of this application includes a host material with an energy level gradient distribution, which can generate an excimer complex with an energy gradient distribution. During energy transfer, while higher energy is transferred to the guest material, some higher energy remains untransferred. In the presence of both higher and lower energy levels, this untransferred higher energy will be transferred to the higher and lower energy levels, and so on. This effectively reduces energy loss from untransferred energy levels, avoids large-area energy accumulation, and effectively promotes charge balance. Compared to the light-emitting device of Comparative Example 3, the light-emitting devices of Examples 1-39 have similar color coordinates, similar voltage @J10, better current efficiency, and significantly longer lifetime. It is evident that light-emitting devices using the composition of this application as the light-emitting layer material can achieve better current efficiency and longer lifetime while maintaining a good voltage @J10. This may be because, in the compositions of Examples 1-39, at least one of the first electron acceptor material and the n second electron acceptor materials satisfies |T1-S1|≤0.5eV in both singlet and triplet energy levels. On the one hand, during exciton transfer, the first electron acceptor material and / or the second electron acceptor material that satisfies this condition are more likely to form excitocomplexes with the electron donor material. This is more conducive to the formation of multiexciton channels (multiexciton complex energy channels), thereby effectively reducing energy loss that is not transferred to the guest material, avoiding large-area energy accumulation, and effectively promoting charge balance, thus more effectively improving the lifetime of the light-emitting device prepared by the composition; on the other hand, the first electron acceptor material and / or the second electron acceptor material that meet the above conditions have a role similar to energy recovery and retransmission in the whole energy transfer process. A part of the energy that cannot be directly transferred to the guest material will be transferred to the first electron acceptor material and / or the second electron acceptor material that meet the above conditions. Since the difference between S1 and T1 is small, the energy can be quickly returned and then transferred to the guest material, thereby establishing a more effective additional multiexciton transport channel and avoiding energy accumulation.

[0234] The technical solutions provided by the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A composition comprising a host material and an object material, characterized in that, The host material includes an electron donor material, a first electron acceptor material, and an exciton modulation hybrid material. The exciton modulation hybrid material includes n types of second electron acceptor materials, where n is an integer greater than 0. The n types of second electron acceptor materials include second electron acceptor material a1 to second electron acceptor material a1. n ,in, When n=1, the LUMO energy level of the first electron acceptor material is greater than the LUMO energy level of the second electron acceptor material a1; when n≥2, the LUMO energy level of the first electron acceptor material is greater than the LUMO energy level of the second electron acceptor material a1, and the second electron acceptor material a1... x-1 The LUMO energy level is greater than that of the second electron acceptor material a x The LUMO energy level, where x is any integer from 2 to n; In the first electron acceptor material and the n second electron acceptor materials, at least one material has a singlet energy level and a triplet energy level that satisfy |T1-S1|≤0.5eV, where T1 is a triplet energy level and S1 is a singlet energy level; The electron donor material has the structure shown in formula (I): （I） Where m' and n' are each independently selected from any integer from 1 to 4; Ar1 is selected from substituted or unsubstituted benzene rings; R a R b At least one of m' R' and n' R'' is a hole transport unit, and each of the remaining ones is independently selected from an aromatic group with 6 to 60 substituted or unsubstituted carbon atoms, a heteroaromatic group with 3 to 60 substituted or unsubstituted carbon atoms, or any combination of these groups; Ar1, R a R b Each substituent described in R', R'', and R'' is independently selected from D, -F, -Cl, -Br, -I, hydroxyl, mercapto, carboxyl, nitro, amino, sulfonic acid, silyl, C1~C 20 Alkyl, C1~C 20 Alkoxy, C1~C 20 Alkyl thioyl, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, arylthioyl with 6 to 60 ring atoms, or any combination of these groups.

2. The composition according to claim 1, characterized in that, m' and n' are each independently selected from any integer from 1 to 2; R a R b At least one of m' R' and n' R'' is a hole transport unit, and each of the remaining ones is independently selected from an aromatic group with 6 to 30 substituted or unsubstituted carbon atoms, a heteroaromatic group with 3 to 30 substituted or unsubstituted carbon atoms, or any combination of these groups; Ar1, R a R b Each substituent described in R', R'', and R'' is independently selected from D, -F, -Cl, -Br, -I, hydroxyl, mercapto, carboxyl, nitro, amino, sulfonic acid, silyl, C1~C 10 Alkyl, C1~C 10 Alkoxy, C1~C 10 Alkyl thioyl, aryl with 6 to 30 ring atoms, aryloxy with 6 to 30 ring atoms, arylthioyl with 6 to 30 ring atoms, or any combination of these groups.

3. The composition according to claim 1, characterized in that, The hole transmission unit is selected from one or more of the following structures: Among them, Ar 11 Selected from aromatic groups having 6 to 40 carbon atoms, substituted or unsubstituted heteroaromatic groups having 3 to 40 carbon atoms, or any combination of these groups; Y1 and Y2 are independently selected from single bonds, N(R3), C(R3R4), Si(R3R4), O, S, C=N(R3), C=C(R3R4) or P(R3); R1, R2, R3, and R4 are each independently selected from alkyl groups having 1 to 30 carbon atoms (substituted or unsubstituted), alkoxy groups having 1 to 30 carbon atoms (substituted or unsubstituted), cycloalkyl groups having 3 to 30 carbon atoms (substituted or unsubstituted), aromatic groups having 6 to 60 cyclic atoms (substituted or unsubstituted), heteroaromatic groups having 5 to 60 cyclic atoms (substituted or unsubstituted), or any combination of these groups.

4. The composition according to claim 1, characterized in that, The second electron acceptor material has the structure shown in formula (II): (II) Where m0 and n0 are each independently selected from integers from 1 to 4; X is selected from S, O, or N; Each of the following L, L1, and L2 is independently selected from a single bond, a substituted or unsubstituted aromatic group having 6 to 60 carbon atoms, a substituted or unsubstituted heteroaromatic group having 3 to 60 carbon atoms, or any combination of these groups. R c Among the m0 R''' and n0 R'''', at least one is the first electron transport unit, and each of the remaining ones is independently selected from an aromatic group with 6 to 60 substituted or unsubstituted carbon atoms, a heteroaromatic group with 3 to 60 substituted or unsubstituted carbon atoms, or any combination of these groups; L, L1, L2, R c Each substituent described in R''', R'''', is independently selected from D, -F, -Cl, -Br, -I, hydroxyl, mercapto, carboxyl, nitro, amino, sulfonic acid, silyl, C1~C 20 Alkyl, C1~C 20 Alkoxy, C1~C 20 Alkyl thioyl, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, arylthioyl with 6 to 60 ring atoms, or any combination of these groups.

5. The composition according to claim 4, characterized in that, m0 and n0 are each independently selected from integers from 1 to 2; Each of the following L, L1, and L2 is independently selected from a single bond, a substituted or unsubstituted aromatic group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaromatic group having 3 to 30 carbon atoms, or any combination of these groups. R c Among the m0 R''' and n0 R'''', at least one is the first electron transport unit, and each of the remaining ones is independently selected from aromatic groups with 6 to 30 substituted or unsubstituted carbon atoms, heteroaromatic groups with 3 to 30 substituted or unsubstituted carbon atoms, or any combination of these groups; L, L1, L2, R c Each substituent described in R''', R'''', is independently selected from D, -F, -Cl, -Br, -I, hydroxyl, mercapto, carboxyl, nitro, amino, sulfonic acid, silyl, C1~C 10 Alkyl, C1~C 10 Alkoxy, C1~C 10 Alkyl thioyl, aryl with 6 to 30 ring atoms, aryloxy with 6 to 30 ring atoms, arylthioyl with 6 to 30 ring atoms, or any combination of these groups.

6. The composition according to claim 4, characterized in that, The first electron transport unit is selected from F, cyano, or one or more of the following groups: Where a1 is 1, 2 or 3; X 1 To X 8 Each is independently selected from CR7 or N, and at least one of them is N; M 1 M 2 M 3 Each of the following can be independently represented: N(R7), C(R7R8), Si(R7R8), O, C=N(R7), C=C(R7R8), P(R7), P(=O), R7, S, S=O, SO2, or none. R5, R6, R7, and R8 are each independently selected from alkyl groups having 1 to 30 carbon atoms (substituted or unsubstituted), alkoxy groups having 1 to 30 carbon atoms (substituted or unsubstituted), cycloalkyl groups having 3 to 30 carbon atoms (substituted or unsubstituted), aromatic groups having 6 to 60 ring atoms (substituted or unsubstituted), heteroaromatic groups having 5 to 60 ring atoms (substituted or unsubstituted), or any combination of these groups.

7. The composition according to claim 4, characterized in that, The first electron transport unit is selected from one or more of the following groups: Each occurrence of X' is independently selected from C, N, O, or S, and at least one X' in each group is N.

8. The composition according to claim 1, characterized in that, The LUMO energy level of the electron donor material is greater than that of the LUMO energy level of the first electron acceptor material; The HOMO energy level of the electron donor material is greater than that of the first electron acceptor material; The HOMO energy level of the electron donor material is greater than the HOMO energy levels of each of the second electron acceptor materials.

9. The composition according to claim 1, characterized in that: When n≥2, the difference between the LUMO energy level of the first electron acceptor material and the LUMO energy level of the second electron acceptor material a1 is equal to the difference between the LUMO energy level of the second electron acceptor material a1 and the LUMO energy level of the second electron acceptor material a1. x-1 The LUMO energy level and the second electron acceptor material a x The absolute value of the difference between the LUMO energy levels is less than or equal to 0.5 eV.

10. The composition according to claim 1, characterized in that, The absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of the first electron acceptor material is greater than the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy levels of each of the second electron acceptor materials.

11. The composition according to claim 10, characterized in that, When n≥2, the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of the first electron acceptor material is greater than the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of the second electron acceptor material a1, and the difference between the HOMO energy level of the electron donor material and the LUMO energy level of the second electron acceptor material a1 is greater than the absolute value of the difference between the HOMO energy level of the electron donor material and the LUMO energy level of the second electron acceptor material a1. y-1 The absolute value of the difference between the LUMO energy levels is greater than that between the HOMO energy levels of the electron donor material and the second electron acceptor material a. y The absolute value of the difference between the LUMO energy levels, where y is any integer from 2 to n.

12. The composition according to claim 1, characterized in that, The triplet energy level of the first exciplex formed by the electron donor material and the first electron acceptor material is greater than the triplet energy levels of the second exciplexes formed by the electron donor material and each of the second electron acceptor materials, respectively.

13. The composition according to claim 12, characterized in that, When n≥2, the triplet energy level of the first excitocomplex generated by the electron donor material and the first electron acceptor material is greater than the triplet energy level of the second excitocomplex generated by the electron donor material and the second electron acceptor material a1, and the electron donor material and the second electron acceptor material a1 z-1 The triplet energy level of the generated second excitocomplex is greater than that of the electron donor material and the second electron acceptor material. z The generated second excitocomplex triplet energy level, where z is any integer from 2 to n.

14. The composition according to claim 1, wherein The absolute value of the difference between the LUMO energy level of the first electron acceptor material and the LUMO energy level of the second electron acceptor material a1 is 0.01 eV to 0.5 eV; The second electron acceptor material a x-1 The LUMO energy level and the second electron acceptor material a x The absolute value of the difference between the LUMO energy levels is 0.01 eV to 0.5 eV.

15. The composition according to claim 1, wherein n is any integer from 1 to 50; The absolute value of the difference between the LUMO energy level of the electron donor material and the LUMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV; The absolute value of the difference between the HOMO energy level of the electron donor material and the HOMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV; The triplet energy levels of the electron donor material, the first electron acceptor material, and the exciton modulation hybrid material are all higher than the triplet energy level of the guest material.

16. The composition according to claim 1, wherein n is any integer from 1 to 15; The absolute value of the difference between the HOMO energy level of the electron donor material and the HOMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV and less than or equal to 1 eV; The absolute value of the difference between the HOMO energy level of the electron donor material and the HOMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV and less than or equal to 1 eV; In the composition, the content of the host material is 80 wt% to 98 wt%, and the content of the guest material is 2 wt% to 20 wt%; In the host material, the total content of the electron donor material and the first electron acceptor material is 20 wt% to 98 wt%, and the content of the exciton modulation hybrid material is 2 wt% to 80 wt%; The mass ratio of the electron donor material to the first electron acceptor material is x:y, where 0 < x < 10, 0 < y < 10, and x + y = 10.

17. The composition according to claim 1, characterized in that, The electron donor material includes at least one of the compounds represented by the following structural formulas: 。 18. The composition according to claim 1, characterized in that, The second electron acceptor material includes at least one of the compounds represented by the following structural formulas: 。 19. The composition according to claim 1, characterized in that, The first electron acceptor material has the structure shown in formula (III): (III) where m1 is selected from integers from 1 to 6; A is a second electron transport unit; Ar2 is selected from a substituted or unsubstituted aromatic group having 6 to 60 carbon atoms, a substituted or unsubstituted heteroaromatic group having 3 to 60 carbon atoms, or any combination of these groups.

20. The composition of claim 19, characterized in that, The second electron transport unit is selected from F, cyano, or one or more of the following groups: Where b1 is 1, 2 or 3; Y 1 To Y 8 Each independently selected from CR 11 Or N, and at least one of them is N; N 1 N 2 N 3 Represent N(R) independently 11 ), C(R 11 R 12 ), Si(R) 11 R 12 O, C=N(R) 11 C=C(R) 11 R 12 ), P(R 11 ), P(=O) R 11 S, S=O, SO2 or none; R9, R 10 R 11 R 12 The groups are individually selected from alkyl groups having 1 to 30 carbon atoms (substituted or unsubstituted), alkoxy groups having 1 to 30 carbon atoms (substituted or unsubstituted), cycloalkyl groups having 3 to 30 carbon atoms (substituted or unsubstituted), aromatic groups having 6 to 60 cyclic atoms (substituted or unsubstituted), heteroaromatic groups having 5 to 60 cyclic atoms (substituted or unsubstituted), or any combination of these groups.

21. The composition according to claim 19, characterized in that, The second electron transport unit is selected from one or more of the following groups: Each occurrence of X'' is independently selected from C, N, O, or S, and at least one X'' in each group is N.

22. The composition according to claim 1, characterized in that, The first electron acceptor material comprises at least one of the compounds shown in the following structural formulas: 。 23. The composition according to claim 1, characterized in that, The guest material is selected from one or more of phosphorescent guest materials, fluorescent guest materials, and narrow-spectrum thermally activated delayed fluorescent guest materials. The phosphorescent guest material includes one or more of iridium-containing phosphorescent guest materials and platinum-containing phosphorescent guest materials. The iridium-containing phosphorescent guest material includes one or more of tris[2-phenylpyridine]iridium(III), tris[2-(p-tolyl)pyridine]iridium(III), bis(2-phenylpyridine)iridium acetylacetonate, and bis(4,6-difluorophenylpyridine-N,C2)pyridinecarboxylated iridium. The fluorescent guest material includes 5,12-dimethylquinacridone, 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-dichlorophenylpyridine)pyridinecarboxylated iridium. -Tetramethyljuronidinyl-4-vinyl)-4H-pyran, 3-(dicyanomethylene)-5,5-dimethyl-1-(4-dimethylamino-styryl)cyclohexene, 2-[2-isopropyl-6-[2-(2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H-benzo[ij]quinazin-9-yl)vinyl]-4H-pyran-4-yl]malonitrile; the narrow-spectrum thermally activated delayed fluorescence luminescent guest material includes IDID2BN, 10-(2,12-di-tert-butyl-5,9-dioxa-13b-boronaphtho[3,2,1-de]anthra-7-yl)-9,9-dimethyl-9,10-dihydroacrylidine, 5-(2,12- Di-tert-butyl-5,9-dioxa-13b-boronaphtho[3,2,1de]anthracene-7-yl)-10,15-diphenyl-10,15-dihydro-5H-diindole[3,2-a:3',2'-c]carbazole, 9'-(2,12-di-tert-butyl-5,9-dioxa-13b-boronaphtho-[3,2,1de]anthracene-7-yl)-9,9'-diphenyl-9H,9'H,9'-H-3,3':6',3'-dicarbazole, 10,10'-(4,4'-sulfonylbis(4,1-phenylene))bis(9,9-dimethyl-9,10-dihydroacridine), 9'-[4-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-3,3” One or more of the following: 6,6'-tetraphenyl-9,3':6',9'-tert-9H-carbazole, (9'-(2,12-di-tert-butyl-5,9-dioxa-13b-boronaphtho[3,2,1-de]anthracene-7-yl)-9'H-9,3':6',9'-dicarbazole, 5-(3,11-dimethyl-5,9-dioxa-13b-boronaphtho[3,2,1-de]anthracene-7-yl)-10,15-diphenyl-10,15-dihydro-5H-diindol[3,2-a:3',2'-c]carbazole, and 3,11-bis(1,3,6,8-tetramethyl-9H-carbazole-9-yl)-5,9-dioxa-13b-boronaphtho[3,2,1-de]anthracene.

24. A mixture, characterized in that: Includes solvents and compositions according to any one of claims 1 to 23.

25. The mixture as claimed in claim 24, characterized in that, The content of the composition in the mixture is 0.3~30 wt%; The solvent comprises one or more of aromatic or heteroaromatic compounds, aromatic esters, alkanes, ethers, ketones, and amines. The aromatic or heteroaromatic compounds include diisopropylbenzene, pentylene, tetrahydronaphthalene, cyclohexylbenzene, chloronaphthalene, 1,4-dimethylnaphthalene, 3-isopropylbiphenyl, p-methylisopropylbenzene, dipentylbenzene, tripentylbenzene, pentyltoluene, o-diethylbenzene, m-diethylbenzene, p-diethylbenzene, 1,2,3,4-tetramethylbenzene, 1,2,3,5-tetramethylbenzene, 1,2,4,5-tetramethylbenzene, butylbenzene, dodecylbenzene, dihexylbenzene, dibutylbenzene, and p-diisopropylbenzene. One or more of the following: cyclohexylbenzene, benzylbutylbenzene, dimethylnaphthalene, 3-isopropylbiphenyl, p-methylisopropylbenzene, 1-methylnaphthalene, 1,2,4-trichlorobenzene, 4,4-difluorodiphenylmethane, 1,2-dimethoxy-4-(1-propenyl)benzene, diphenylmethane, 2-phenylpyridine, 3-phenylpyridine, N-methyldiphenylamine, 4-isopropylbiphenyl, α,α-dichlorodiphenylmethane, 4-(3-phenylpropyl)pyridine, 1,1-bis(3,4-dimethylphenyl)ethane, 2-isopropylnaphthalene, quinoline, isoquinoline, methyl 2-furanate, and ethyl 2-furanate; the aromatic ester compounds include ethyl acetate. The alkane compounds include one or more of the following: butyl acetate, amyl acetate, alkyl benzoate, alkyl octanoate, alkyl sebacate, alkyl stearate, alkyl phenylacetate, alkyl cinnamate, alkyl oxalate, alkyl maleate, alkyl lactone, alkyl oleate, and alkylated alkyl benzoate; the alkane compounds include one or more of the following: n-octane, n-pentane, n-hexane, cyclohexane, phenylcyclohexane, dodecane, and decane; the ether compounds include glycidyl phenyl ether, dibenzyl ether, 4-tert-butyl anisole, trans-p-propenyl anisole, diphenyl ether, 2-phenoxymethyl ether, 2-phenoxytetrahydrofuran, and ethyl-2-naphthyl ether, pentyl ether, and hexyl ether. The compounds are one or more selected from dioctyl ether, ethylene glycol dibutyl ether, diethylene glycol diethyl ether, diethylene glycol butyl methyl ether, diethylene glycol dibutyl ether, triethylene glycol dimethyl ether, triethylene glycol ethyl methyl ether, triethylene glycol butyl methyl ether, tripropylene glycol dimethyl ether, and tetraethylene glycol dimethyl ether; the ketone compounds include one or more selected from 1-tetrahydronaphthone, 2-tetrahydronaphthone, 2-(phenylepoxy)tetrahydronaphthone, 6-(methoxy)tetrahydronaphthone, acetophenone, phenylacetone, benzophenone, and derivatives of the above solvents; the amine compounds include one or more selected from aniline, dimethylacetamide, ethylenediamine, octadeceneamine, ethanolamine, and N,N-dimethylformamide.

26. A light-emitting device, comprising an anode, a light-emitting layer, and a cathode stacked sequentially, characterized in that: The material of the light-emitting layer includes the composition according to any one of claims 1 to 23.

27. The light-emitting device as described in claim 26, characterized in that, The anode and the cathode each independently include a doped metal oxide particle electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal element electrode, or an alloy electrode. The material of the doped metal oxide particle electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, or ZnS / Al / ZnS. The material of the metal element electrode includes one or more of Ag, Al, Cu, Mo, Au, Pt, Ca, Mg, and Ba. The alloy electrode includes an Au:Mg alloy electrode or an Ag:Mg alloy electrode. The light-emitting device further includes a hole transport layer located between the anode and the light-emitting layer. The hole transport layer is made of materials including NHT-1, HTM014, HTM081, HTM163, HTM222, NHT-5, NHT-18, NHT-49, NHT-51, EL-301, EL-22T, 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4''-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N, N'bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiroNPB, poly(phenylene oxide) Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], 1,3-di(carbazole-9-yl)benzene, polyaniline, polypyrrole, poly(p)phenylenevinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazole)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylates and their derivatives, poly(9,The metal oxide comprises one or more of the following: 9-octylfluorene and its derivatives, poly(spirofluorene) and its derivatives, second-doped metal oxide particles, second-undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the second-doped and second-undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5. The doping element in the second-doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfide includes one or more of CuS, MoS3, and WS3. The metal selenide includes one or more of MoSe3 and WSe3. The metal nitride includes p-type gallium nitride. The light-emitting device further includes a hole injection layer located between the anode and the hole transport layer. The hole injection layer is made of materials including NDP-2, NDP-9, F4-TCNQ, F6-TCNNQ, poly(3,4-ethylenedioxythiophene), poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethylethane, and 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene. Polyester copper carbonate, free phthalocyanine, copper phthalocyanine, platinum phthalocyanine, titanium phthalocyanine, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, 7,7,8,8-tetracyano-p-benzodiquinone dimethyl ether, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-di-1-naphthyl-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(4'-(N,N-di(1-naphthyl)-amino)-4-biphenyl)-benzidine, N,N′-di(phenyl)-N,N ′-Di(4′-(N,N-di(phenylamino)-4-biphenyl)benzidine, N,N'-diphenyl-N,N'-di-[4-(N,N-di-p-tolylamino)phenyl]benzidine, N4,N4,N4',N4'-tetra(4-methoxyphenyl)-[1,1'-biphenyl]-4,4'-diamine, 4,4',4''-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4'4"-tris(N,N-diphenylamino)triphenylamine, N2,N2'-(9,9-dimethyl-9H -fluorene-2,7-diyl)bis(9,9-dimethyl-N2,N7,N7-triphenyl-9H-fluorene-2,7-diamine), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, transition metal oxides, and transition metal chalcogenides, wherein the transition metal oxides are selected from one or more of NiO, MoO3, WO3, CuO, and Cu2O; and the transition metal chalcogenides are selected from one or more of MoS2, MoSe2, WS3, WSe3, and CuS. The light-emitting device further includes an electron transport layer located between the light-emitting layer and the cathode. The electron transport layer is made of one or more materials selected from inorganic and organic electron transport materials. The inorganic electron transport material includes one or more of doped metal oxide particles, undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3; the doping element in the doped metal oxide particles includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga; the IIB-VIA group semiconductor material includes one or more of ZnS, ZnSe, and CdS; the IIIA-VA group semiconductor material includes one or more of InP and GaP; and the IB-IIIA-VIA group semiconductor material includes one or more of CuInS and CuGaS.The organic electron transport materials include NET-164, NDN-87, NDN-45, NDN-18, NDN-218, ET093, ETM020, ETM033, ETM034, ETM036, diphenyl[4-(triphenylsilyl)phenyl]phosphine oxide, 1,3,5-tris((3-pyridyl)-3-phenyl)benzene, 2-(4-biphenyl)-5-phenyloxadiazole, bis(10-hydroxybenzo[h]quinoline)beryllium, 3-( Biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole, 2,7-bis(diphenyloxyphosphino)-9,9'-spirobis[fluorene], 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, 4,6-bis(3,5-di(3-pyridinylphenyl)-2-methylpyrimidine-4,7-diphenyl-1,10-phenanthroline, 2-(4'-tert-butylphenyl)-5-(4'-biphenyl)-1,3,4-oxo Diazole, 2,9-dimethyl-4,7-diphenyl-1,10-o-diazanthroline, 4,7-diphenyl-1,10-o-diazanthroline, bis(2-methyl-8-hydroxyquinoline-N1,O8)-1,1'-biphenyl-4-hydroxy)aluminum, 8-hydroxyquinoline aluminum, 8-hydroxyquinoline lithium, 2,7-bis(diphenyloxyphosphino)-9,9'-spirobis[fluorene], poly[9,9-dioctylfluorene-9,9-bis(N,N-dimethylaminopropyl)fluorene], 9,9-bis[3 One or more of the following: '-(N,N-dimethylamino)propyl-2,7-fluorene]-alternating-2,7-(9,9-dioctylfluorene), 1,3-bis[5-(4-tert-butylphenyl)-2-[1,3,4]oxadiazolyl]benzene, 3',3'",3'""-(1,3,5-triazine-2,4,6-triyl)-tris(([1,1'-biphenyl]-3-carboxynitrile)), and 2,4,6-tris[3-(diphenylphosphoxy)phenyl]-1,3,5-triazole; The light-emitting device further includes an electron injection layer located between the electron transport layer and the cathode. The material of the electron injection layer includes one or more of Yb, YF3, Li, LiF, NaF, CsCO3, Cs, KBH4, and KH.

28. A display device, characterized in that, The display device includes the light-emitting device according to any one of claims 26 to 27.

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