Flexible scintillator film and preparation method and application thereof

Abstract

The invention provides a flexible scintillator film and a preparation method and application thereof, and belongs to the technical field of ray detection materials. Comprising a flexible base film, a titanium oxide reflective coating and a scintillator layer, the flexible base film is a PEN film, a PET film or a PEN and PET composite film, and the titanium oxide reflective coating and the scintillator layer are located on the two sides of the flexible base film respectively. The flexible scintillator film provided by the invention has good bending resistance and curved surface X-ray detection imaging capability, high luminous intensity and resolution, and good radiation resistance and moisture resistance.

Description

Technical Field

[0001] This application relates to a flexible scintillator film, its preparation method, and its application, belonging to the field of X-ray detection materials technology. Background Technology

[0002] In recent years, flexible X-ray imaging technology has shown great demand in emerging scenarios such as medical intervention, industrial non-destructive testing, and wearable radiation monitoring. Its core lies in flexible scintillator thin film materials that combine high sensitivity, high resolution, and environmental stability. Metal halide perovskites, due to their tunable bandgap, high exciton binding energy, and ability to be processed at low temperatures in solutions, are considered ideal candidates for next-generation scintillators.

[0003] However, this type of material exhibits multiple stability bottlenecks under actual service conditions:

[0004] I. Halogen ions (I) in two-dimensional / three-dimensional perovskites - / Br - Migration driven by an external electric field or radiation field can induce nonradiative recombination centers, resulting in a significant decrease in light output with irradiation time.

[0005] 2. Cu in copper-based halide perovskites + It is easily oxidized in hot and humid environments. This triggers irreversible luminescence quenching;

[0006] Third, the chemical sensitivity of perovskite lattices to water / oxygen leads to the formation of non-luminescent phases, resulting in a permanent loss of detection efficiency.

[0007] The aforementioned environmental sensitivity defects have become a key obstacle restricting the industrialization of perovskite scintillators.

[0008] Traditional encapsulation strategies often employ organic polymers such as polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), or epoxy resin as flexible matrices, physically embedding perovskite micro / nanocrystals to isolate them from water and oxygen. While such approaches can impart a certain degree of flexibility to the thin film and adapt it to curved detector surfaces, the light scattering caused by the polymer-scintillator refractive index mismatch significantly reduces the imaging spatial resolution, and the loss of luminous efficiency due to low fill density is also considerable. Therefore, how to achieve the fabrication of highly dense, low-scattering, and highly stable scintillator thin films while maintaining flexibility has become a core challenge in the field. Summary of the Invention

[0009] In view of this, the first objective of this application is to provide a flexible scintillator film that not only has good bending resistance and curved X-ray detection imaging capability, but also has extremely high luminous intensity and resolution, and good resistance to radiation and moisture.

[0010] Specifically, this application is implemented through the following scheme:

[0011] A flexible scintillator film includes a flexible base film, a titanium dioxide reflective coating, and a scintillator layer. The flexible base film is a PEN film, a PET film, or a composite film of PEN and PET. The titanium dioxide reflective coating and the scintillator layer are located on opposite sides of the flexible base film.

[0012] Furthermore, as a preferred option:

[0013] The thickness of the flexible base film is 50–300 μm.

[0014] In the PEN and PET composite film, the mass ratio of PEN to PET is 50-100:50-0, and does not take a zero value (when it takes a zero value, it is a PEN film). More preferably, the mass ratio of PEN to PET is 75-100:25-0.

[0015] The thickness of the titanium dioxide reflective coating is 1 nm to 1 μm.

[0016] The thickness of the scintillator layer is 100–400 μm.

[0017] The scintillators in the scintillator layer are Cs3Cu2I5, Cs3Cu2Br5, Cs3Cu2Cl5, and Cs3Cu2Cl. x I 5-x (0≤x≤5), Cs3Cu2Cl x Br 5-x (0≤x≤5), Cs3Cu2Br x I 5-x (0≤x≤5), CsCu2I3, Cu3Cl6I2, and one or more of the copper-based halide scintillators composed of the above-mentioned compound doping elements Zn, Cu, Pb, Mn, Ag, In, Sb, Tl, Tb, Pr, Ce, Yb, Gd, Nd, or Lu. More preferably, the scintillator of the scintillator layer is Cs3Cu2I5 doped with Tl.

[0018] The applicant's second objective is to provide a method for preparing the aforementioned flexible scintillator film, the steps of which are as follows:

[0019] Step 1: Prepare a flexible base film;

[0020] Step 2: A titanium dioxide reflective coating is deposited on the surface of the flexible base film using the sol-gel method to improve the reflectivity and scratch resistance of the flexible base film.

[0021] Step 3: Cut the material obtained in Step 2 into the specified size, spray and wash the side without the titanium oxide reflective coating, and blow away the water vapor and solvent residue. This side serves as the base for the scintillator layer.

[0022] Step four: After adding additives, the scintillator material is ball-milled. The resulting slurry is coated onto the substrate of the scintillator layer. After preheating and setting, the scintillator film is inverted and purged alternately with hot steam containing both organic solvents and anti-solvents. Annealing is then performed to further remove residual solvents. The scintillator layer is formed only after the film has crystallized.

[0023] Step 5: Encapsulation to obtain the finished flexible scintillator film.

[0024] Preferred:

[0025] In step one, the flexible base film is prepared by vacuum drying PEN (polyethylene naphthalate), PET, or a mixture of PEN and PET, then adding it to a screw extruder, melting, filtering, and casting to obtain the film.

[0026] In a mixture of PEN and PET, the mass ratio of PEN to PET is 50–100:50–0, and is not zero (when it is zero, only PEN is used). More preferably, the mass ratio of PEN to PET is 75–100:25–0.

[0027] In step three,

[0028] The spraying refers to repeated spraying with deionized water, acetone and ethanol in sequence.

[0029] The drying process uses nitrogen (N2) for drying.

[0030] In step four,

[0031] The adjuvant may be one or more of the following: water, N,N-dimethylformamide, N,N-dimethylacetamide, dimethyl sulfoxide, ethylene glycol methyl ether, γ-butyrolactone, methanol, ethanol, isopropanol, n-butanol, n-hexane, ethyl acetate, methyl acetate, methyl formate, acetone, toluene, mercaptoethanol, methyl mercaptoacetate, acetonitrile, and glycerol.

[0032] The preheating and shaping temperature is 30–100°C, and the duration is 3–300 min. More preferably, the preheating and shaping temperature is 30–40°C, and the duration is 20–30 min.

[0033] In step five,

[0034] The organic solvent is one or more of N,N-dimethylformamide, N,N-dimethylacetamide, dimethyl sulfoxide, N-methylpyrrolidone, 1,3-dimethyl-2-imidazolinone, and γ-valerolactone.

[0035] The antisolvent is one or more of methanol, ethanol, isopropanol, n-butanol, tert-butanol, isobutanol, n-hexane, ethyl acetate, methyl acetate, methyl formate, acetone, and toluene.

[0036] The time interval for the alternating purging is 1 to 30 minutes.

[0037] The duration of the alternating purging is 1 to 3 hours.

[0038] The annealing temperature is 60–200°C, and the annealing time is 1–24 hours. More preferably, the annealing temperature is 100–120°C, and the annealing time is 10–12 hours.

[0039] The applicant's third objective is to provide the application of the aforementioned flexible scintillator film in X-ray imaging technology. In application, a sensor can be coupled and packaged, and the sensor can be any of the following: TFT (amorphous silicon a-Si TFT, IGZO, LTPS, etc.), flexible PI / CPI, or CMOS readout circuit.

[0040] This application introduces a highly stable PEN flexible support layer into a flexible scintillator film, exhibiting excellent bending resistance and good interface compatibility with flexible detector substrates. Combined with the inverted heating process and hot vapor purging technology using organic solvents and anti-solvents during scintillator layer molding, film crystallization can be effectively controlled, significantly improving the film's luminescence performance. The preparation method is simple, allows for large-area production and application, and is cost-effective. Attached Figure Description

[0041] Figure 1 This is a schematic diagram of the cross-sectional structure of the flexible scintillator film of this application.

[0042] 1. Flexible base film; 2. Titanium oxide reflective coating; 3. Scintillator layer;

[0043] Figure 2 This is a photograph of the flexible scintillator film prepared in Example 1.

[0044] (a) is a plan view of the scintillator membrane, (b) is a top view bent at 90°, and (c) is a front view bent at 90°.

[0045] Figure 3 This is a comparison of the X-ray emission spectra of the flexible scintillator films prepared in Example 1 and Comparative Example 1.

[0046] Figure 4 The images show a comparison of XRD results for the flexible scintillator films prepared in Examples 1-4. Detailed Implementation

[0047] In the following embodiments, the technical effects of each embodiment are characterized by the following conditions:

[0048] 1) Sample preparation and packaging

[0049] Sample specifications: The flexible scintillator films prepared in each embodiment were cut into areas of 160mm×128mm, aligned with a-Si TFT (pixel size: 125μm) arrays of the same size, placed in a vacuum laminator for vacuuming, and then bonded to the TFTs by edge hot pressing. They were then further assembled and connected to an X-ray flat panel detector.

[0050] 2) Irradiation test conditions

[0051] (1) Test conditions for luminescence intensity and resolution: The X-ray source exposure parameters were 70kV, 10mA, and 125ms, the distance from the X-ray source to the detector (SID) was 125cm, and the characterization test was conducted at room temperature.

[0052] (2) Radiation resistance test conditions: using a 60Co radiation source, the irradiation intensity is 3000Gy / h, the continuous irradiation time is 1 hour, and the ambient temperature is controlled at 40℃ and 90%RH.

[0053] Example 1

[0054] This embodiment describes the preparation of a flexible scintillator film, the structure of which is as follows: Figure 1 As shown: It includes a flexible base film 1, a titanium dioxide reflective coating 2, and a scintillator layer 3. The flexible base film 1 is a 100 μm thick PEN film. The titanium dioxide reflective coating 2 and the scintillator layer 3 are located on both sides of the flexible base film 1, respectively. The thickness of the titanium dioxide reflective coating 2 is 800 nm, and the thickness of the scintillator layer 3 is 300 μm.

[0055] The preparation steps of the above-mentioned flexible scintillator film are as follows:

[0056] (1) Preparation of flexible base film 1: Weigh 50 kg of PEN resin particles, vacuum dry them at 160°C for 6 hours, add them to the feed trough of the screw extruder, set the melting temperature at 300°C, filter the melt through a 20 μm high-precision filter to remove impurities, and then cast and roll it to obtain a PEN (polyethylene naphthalate) flexible base film 1 with a thickness of 100 μm.

[0057] (2) Preparation of titanium dioxide reflective coating 2: Tetrabutyl titanate (TNBT) and acetylacetone (AcAc) were mixed in a molar ratio of 1:1, and anhydrous ethanol (EtOH) was added and stirred for 40 min to obtain a titanium alkoxide precursor solution. Then, deionized water and anhydrous ethanol were mixed at a volume ratio of 1:5, and nitric acid (HNO3) was added dropwise to adjust the pH value to around 2. The mixture was then added dropwise to the titanium alkoxide precursor solution while stirring rapidly. The molar ratio of the reaction was controlled as TNBT:EtOH:H2O:HNO3:AcAc=1:30:3:2:1. After stirring continuously for more than two hours to obtain a uniform gel, the mixture was allowed to stand. The PEN base film was then subjected to plasma treatment and impregnated in the gel to form a film. The film was then subjected to staged heat treatment: 80℃→120℃→140℃→160℃, with each stage held for 1 hour. Finally, the film was irradiated with a 365nm ultraviolet lamp for 40 minutes to obtain an 800nm ​​titanium oxide reflective coating 2, which improves the reflectivity and scratch resistance of the flexible PEN film.

[0058] (3) Prepare the scintillator layer substrate: Cut the prepared PEN film into the specified size, and repeatedly spray the smooth surface without the titanium dioxide reflective coating 2 with deionized water, acetone and ethanol. Then use N2 to blow dry the water vapor and solvent residue as the substrate of the scintillator layer.

[0059] (4) Preparation of scintillator layer 3: Weigh 300 mmol of CsI, 200 mmol of CuI, and 0.3 mmol of IIl (thallium iodide), add 20 mL of ethyl acetate as an auxiliary agent, and ball mill at room temperature to obtain a slurry. Coat a 400 μm wet film on a PEN substrate. After preheating at 40 °C for 30 min to set the film, invert the scintillator film face down in a fume hood and alternately purge it with hot steam using a good solvent DMF (N,N-dimethylformamide) and a countersolvent n-butanol for 1 hour, with an interval of 5 min between the two. Then anneal the scintillator film at 100 °C for 12 hours to further remove residual solvent and promote film crystallization to obtain scintillator layer 3, which has the composition Cs3Cu2I5:Tl.

[0060] (5) Flexible scintillator film encapsulation and testing: After the prepared scintillator film is aligned with the pixel area of ​​the a-Si TFT (pixel size: 125μm), it is placed in a vacuum laminator and vacuumed. It is then bonded to the TFT by edge hot pressing and further assembled and connected to the X-ray flat panel detector for characterization and testing.

[0061] from Figure 2 It can be seen that the flexible scintillator film prepared in this embodiment has good bending resistance, can withstand 90-degree bending without creases, and has the ability to detect and image curved surfaces with X-rays.

[0062] Performance tests were conducted on the Cs3Cu2I5:Tl scintillator film bonded and packaged with a-Si TFT. The resolution was 4.0 Lp / mm, the initial luminous intensity was 8698 cd, the luminous intensity after irradiation was 7915 cd, and the luminous intensity retention rate after irradiation was approximately 90%.

[0063] Comparative Example 1

[0064] The setup for this comparative example is the same as that for Example 1, except that no reflective coating is applied. The preparation process is as follows:

[0065] (1) Preparation of flexible base film 1: Weigh 50 kg of PEN resin particles, vacuum dry them at 160°C for 6 hours, add them to the feed trough of the screw extruder, set the melting temperature at 300°C, filter the melt through a 20 μm high-precision filter to remove impurities, and then cast and roll it to obtain a PEN (polyethylene naphthalate) flexible base film 1 with a thickness of 100 μm.

[0066] (2) Prepare the scintillator layer substrate: Cut the prepared PEN film into the specified size, and repeatedly spray the light side of one side with deionized water, acetone and ethanol. Then use N2 to blow dry the water vapor and solvent residue to serve as the substrate of the scintillator layer.

[0067] (3) Preparation of scintillator layer 3: Weigh 300 mmol of CsI, 200 mmol of CuI, and 0.3 mmol of IIl respectively, add 20 mL of ethyl acetate as an auxiliary agent, and ball mill at room temperature to obtain a slurry. Coat a 400 μm wet film on a PEN substrate, preheat at 40 °C for 30 min to set the shape, and then invert the scintillator film face down in a fume hood. Use good solvent DMF and anti-solvent n-butanol hot steam to alternately purge for 1 hour, with an interval of 5 min between the alternation. Then anneal the scintillator film at 100 °C for 12 hours to further remove residual solvent and promote film crystallization to obtain scintillator layer 3, which has the composition Cs3Cu2I5:Tl.

[0068] (4) Flexible scintillator film encapsulation and testing: After aligning the prepared scintillator film with the pixel area of ​​the a-Si TFT (pixel size: 125μm), it was placed in a vacuum laminator and vacuumed. It was then bonded to the TFT by edge hot pressing and further assembled and connected to an X-ray flat panel detector for characterization and testing. The performance of the Cs3Cu2I5:Tl scintillator film after being bonded and encapsulated with the a-Si TFT was tested. The resolution was 4.0 Lp / mm, the initial luminous intensity was 6214 cd, the luminous intensity after irradiation was 5468 cd, and the luminous intensity retention rate after irradiation was approximately 88%. Figure 3 The X-ray emission spectrum comparison shows that the titanium oxide reflective coating 2 significantly improves the luminescence intensity of the scintillator.

[0069] Example 2

[0070] This embodiment is the same as the one in embodiment 1, except that in step (4), after the film is preheated at 40°C for 30 minutes and the film is set, the scintillator film surface is not placed upside down.

[0071] Performance tests were conducted on the Cs3Cu2I5:Tl scintillator film bonded and packaged with a-Si TFT. The resolution was 3.4 Lp / mm, the initial luminous intensity was 6716 cd, the luminous intensity after irradiation was 6044 cd, and the luminous intensity retention rate after irradiation was approximately 90%.

[0072] Example 3

[0073] This embodiment has the same setup as Embodiment 1, except that in step (4), during purging, only hot steam from the good solvent DMF is used for purging for 1 hour.

[0074] Performance tests were conducted on the Cs3Cu2I5:Tl scintillator film bonded and packaged with a-Si TFT. The resolution was 3.7 Lp / mm, the initial luminous intensity was 7893 cd, the luminous intensity after irradiation was 7034 cd, and the luminous intensity retention rate after irradiation was approximately 89%.

[0075] Example 4

[0076] This embodiment has the same setup as Embodiment 1, except that in step (4), during purging, only the hot steam flow of the anti-solvent n-butanol is used for purging for 1 hour.

[0077] Performance tests were conducted on the Cs3Cu2I5:Tl scintillator film bonded and packaged with a-Si TFT. The resolution was 3.7 Lp / mm, the initial luminous intensity was 7005 cd, the luminous intensity after irradiation was 6234 cd, and the luminous intensity retention rate after irradiation was approximately 89%.

[0078] Compared with Example 1, the luminescence intensity and resolution of Examples 2, 3, and 4 decreased significantly, indicating that inverting the hot stage can promote the growth of scintillator grains along the vertical orientation, reduce the grain boundaries of random orientation, and further improve the crystallinity by alternating purging with a good solvent and an antisolvent. The antisolvent desolventizes and quickly removes residual solvent, while the good solvent delays excessive crystal growth, ultimately resulting in grains with uniform size and highly ordered orientation. Only the combination of good solvent and antisolvent in the inversion can enable the flexible scintillator film to exhibit a high level of luminescence intensity and resolution.

[0079] Figure 4 The XRD pattern confirms that the flexible scintillator film prepared in this application is in high agreement with the standard card (PDF#79-0333), which confirms that the preparation process of this application optimizes the crystal quality and thus simultaneously enhances the luminous efficiency and imaging resolution.

[0080] Example 5

[0081] This embodiment has the same setup as Embodiment 1, except that in step (4), the organic solvent used for purging is a mixture of N,N-dimethylformamide and N,N-dimethylacetamide in a volume ratio of 2:1.

[0082] Performance tests were conducted on the Cs3Cu2I5:Tl scintillator film bonded and packaged with a-Si TFT. The resolution was 4.0 Lp / mm, the initial luminous intensity was 8632 cd, the luminous intensity after irradiation was 7701 cd, and the luminous intensity retention rate after irradiation was approximately 89%.

[0083] Example 6

[0084] This embodiment has the same setup as Embodiment 1, except that in step (4), the organic solvent used for purging is a mixture of N,N-dimethylformamide and dimethyl sulfoxide in a volume ratio of 2:1.

[0085] Performance tests were conducted on the Cs3Cu2I5:Tl scintillator film bonded and packaged with a-Si TFT. The resolution was 4.0 Lp / mm, the initial luminous intensity was 8647 cd, the luminous intensity after irradiation was 7782 cd, and the luminous intensity retention rate after irradiation was approximately 90%.

[0086] Example 7

[0087] This embodiment has the same setup as Example 1, except that in step (4), the organic antisolvent used for purging is a mixture of n-butanol and ethyl acetate in a volume ratio of 1:1.

[0088] Performance tests were conducted on the Cs3Cu2I5:Tl scintillator film bonded and packaged with a-Si TFT. The resolution was 4.0 Lp / mm, the initial luminous intensity was 8716 cd, the luminous intensity after irradiation was 7809 cd, and the luminous intensity retention rate after irradiation was approximately 89%.

[0089] The results of Examples 5, 6, and 7 show that the luminescence intensity and resolution are similar to those of Example 1, indicating that the strategy of blending with different solvents can also effectively promote the crystallization of the scintillator film and obtain better luminescence performance.

[0090] Example 8

[0091] This embodiment has the same setup as Embodiment 1, except that the flexible base film 1 is constructed as shown in Table 1.

[0092] Table 1: Performance Comparison of Flexible Base Films with Different PEN to PET Mass Ratios

[0093]

[0094] As can be seen from Table 1, the ability to resist radiation and moisture can be significantly improved by increasing the content of PEN. This is mainly due to the conjugated system of naphthalene ring: the main chain of PEN contains naphthalene ring, and its highly conjugated aromatic structure can block air and effectively absorb radiation.

[0095] Comparative Example 2

[0096] CN116940132A was used as Comparative Example 2.

[0097] Comparative Example 2 is a semiconductor-type direct detector with a multi-layer structure: flexible substrate (PEN / plastic) + ITO bottom electrode + n-type MAPbI3 + p-type MAPbI3 + Au top electrode. It is used in the localization of curved surface CT imaging scenarios and only bending and sensitivity are characterized.

[0098] This application employs a three-layer structure: a flexible base film (PEN / PET) + a titanium dioxide reflective layer + a copper-based halide scintillator layer. The resulting flexible scintillator film is coupled with readout circuits such as TFTs, CMOS, or flexible substrates. The film layer is reusable and easy to maintain, enabling indirect detection and meeting the current market demands for high-resolution medical imaging and industrial non-destructive testing. During fabrication, the film layer is coated using a scraping technique, and further, a high-quality scintillator film layer is obtained using an inverted and hot solvent alternating purging technique. This not only has excellent bending resistance and curved X-ray detection imaging capabilities, but also high luminous intensity and resolution, as well as good radiation stability.

Claims

1. A flexible scintillator membrane, characterized in that: It includes a flexible base film, a titanium dioxide reflective coating, and a scintillator layer. The flexible base film is a PEN film, a PET film, or a composite film of PEN and PET. The titanium dioxide reflective coating and the scintillator layer are located on opposite sides of the flexible base film.

2. The flexible scintillator film according to claim 1, characterized in that: The thickness of the flexible base film is 50–300 μm, the thickness of the titanium dioxide reflective coating is 1 nm–5 μm, and the thickness of the scintillator layer is 100–400 μm.

3. The flexible scintillator film according to claim 1, characterized in that: The scintillators in the scintillator layer are Cs3Cu2I5, Cs3Cu2Br5, Cs3Cu2Cl5, and Cs3Cu2Cl. x I 5-x Cs3Cu2Cl x Br 5-x Cs3Cu2Br x I 5-x CsCu2I3, Cu3Cl6I2, and one or more of the copper-based halide scintillators composed of the above-mentioned compound doping elements Zn, Cu, Pb, Mn, Ag, In, Sb, Tl, Tb, Pr, Ce, Yb, Gd, Nd, or Lu.

4. The flexible scintillator film according to claim 1, characterized in that: In the composite film of PEN and PET, the mass ratio of PEN to PET is 50-100:50-0, and it is not zero.

5. A method for preparing the flexible scintillator film according to claim 1, characterized in that, The steps are as follows: Step 1: Prepare a flexible base film; Step 2: Deposit a titanium dioxide reflective coating on the surface of the flexible substrate film using the sol-gel method; Step 3: Spray and wash the side of the material obtained in Step 2 that does not have the titanium oxide reflective coating, and blow away the water vapor and solvent residue. This side will serve as the substrate for the scintillator layer. Step 4: After adding additives, the scintillator material is ball-milled. The slurry obtained from ball milling is coated onto the substrate of the scintillator layer. After preheating and shaping, the scintillator film is inverted and purged alternately with hot steam of organic good solvent and anti-solvent. Then it is annealed until the film crystallizes and forms a scintillator layer on the flexible base film. It is then encapsulated to obtain a flexible scintillator film.

6. The method for preparing a flexible scintillator film according to claim 5, characterized in that: In step four, the preheating and shaping temperature is 30–100°C, and the duration is 3–300 min.

7. The method for preparing a flexible scintillator film according to claim 5, characterized in that: In step four, the auxiliary agent is one or more of the following: water, N,N-dimethylformamide, N,N-dimethylacetamide, dimethyl sulfoxide, ethylene glycol methyl ether, γ-butyrolactone, methanol, ethanol, isopropanol, n-butanol, n-hexane, ethyl acetate, methyl acetate, methyl formate, acetone, toluene, mercaptoethanol, methyl mercaptoacetate, acetonitrile, and glycerol.

8. The method for preparing a flexible scintillator film according to claim 5, characterized in that: In step four, the organic solvent is one or more of N,N-dimethylformamide, N,N-dimethylacetamide, dimethyl sulfoxide, N-methylpyrrolidone, 1,3-dimethyl-2-imidazolinone, and γ-valerolactone, and the antisolvent is one or more of methanol, ethanol, isopropanol, n-butanol, tert-butanol, isobutanol, n-hexane, ethyl acetate, methyl acetate, methyl formate, acetone, and toluene.

9. The method for preparing a flexible scintillator film according to claim 5, characterized in that: In step four, the annealing temperature is 60–200°C, and the annealing time is 1–24 hours.

10. An application of the flexible scintillator film of claim 1 in X-ray imaging technology, wherein the coupled sensor is any one of TFT, flexible PI / CPI, or CMOS readout circuit.

Images