Plasma enhanced atomic layer deposition device

Abstract

The invention discloses a plasma enhanced atomic layer deposition device which comprises a cavity cover, a plasma enhanced atomic layer deposition device, a plasma enhanced atomic layer deposition device and a plasma enhanced atomic layer deposition device, the cavity comprises a bottom wall and a side wall, a cavity is defined by the bottom wall and the side wall, and the cavity cover covers the cavity to seal the cavity; the wafer rotating disc is rotatably arranged in the cavity, a plurality of carrying tables are arranged on the wafer rotating disc, each carrying table is provided with a plurality of ejector pins, the ejector pins movably penetrate through the carrying tables, and the wafer rotating disc enables the carrying tables to be sequentially located at the feeding positions through rotation; the lifting device is arranged on the cavity, and the lifting device is used for jacking the ejector pin on the carrying table located at the feeding position; and the heating device is arranged on the lower side of the wafer turntable. According to the plasma enhanced atomic layer deposition device provided by the invention, a plurality of wafers can be placed on the wafer turntable, a wafer film deposition process with higher efficiency can be realized, the productivity of single equipment is improved, each part is simple in structure, and the influence among the parts is small when the parts are maintained independently.

Description

Technical Field

[0001] This invention relates to the field of vapor deposition equipment technology, and more specifically, to a plasma-enhanced atomic layer deposition apparatus. Background Technology

[0002] In materials processing, plasma is often used to facilitate the addition or removal of thin films of materials when manufacturing composite structures. In semiconductor processing, vapor deposition is used to remove or etch materials along fine lines or in through-holes. Vapor deposition processes include chemical vapor deposition (CVD) and plasma-enhanced chemical vapor deposition (PECVD).

[0003] In PECVD, plasma is used to alter or enhance the film deposition mechanism. For example, plasma excitation typically allows film formation reactions to occur at temperatures much lower than those required for thermally excited CVD. Furthermore, plasma excitation can activate film-forming chemical reactions that lack the energy or kinetic advantage in thermal CVD. Therefore, by adjusting process parameters, the chemical and physical properties of PECVD films can be varied over a relatively wide range.

[0004] Currently, atomic layer deposition equipment has a relatively complex structure. In order to avoid contamination problems, it requires a complex sealing structure. Moreover, it can only process one wafer at a time, resulting in low production efficiency and reactant utilization, which puts great pressure on equipment capacity and cost consumption. Summary of the Invention

[0005] In view of the shortcomings of the prior art, the present invention innovatively provides a plasma-enhanced atomic layer deposition device, which can solve the technical problems of complex equipment and low production efficiency in the prior art.

[0006] To achieve the above-mentioned technical objectives, the present invention discloses a plasma-enhanced atomic layer deposition apparatus, comprising: A cavity cover, on which a spray head and an air jet head are provided; A cavity, the cavity including a bottom wall and side walls, the bottom wall and side walls forming a cavity, and a cavity cover covering the cavity to seal the cavity; A wafer turntable is rotatably disposed within the cavity. The wafer turntable is provided with multiple stages, and each stage is provided with multiple ejector pins. The ejector pins are movably disposed on the stage. The wafer turntable rotates to position the multiple stages sequentially at the loading position. A lifting device is provided on the cavity, and the lifting device is used to lift the ejector pin on the platform located at the feeding position; A heating device is located on the underside of the wafer turntable.

[0007] Furthermore, a driving assembly is provided on the bottom wall of the cavity. The driving assembly includes a lifting device and a rotating device. The rotating device is connected to the lifting device and is connected to the wafer turntable.

[0008] Furthermore, the rotating device includes a mounting base, a spindle, and a motor. The first end of the spindle passes through the cavity and is connected to the wafer turntable. The second end of the spindle is driven by the motor, which is mounted on the mounting base.

[0009] Furthermore, the lifting device includes a bracket, which is mounted on the bottom wall of the cavity. A driver is mounted on the bracket, and the mounting base is connected to the driver. The driver is used to drive the mounting base to lift.

[0010] Furthermore, the wafer turntable is a circular disk made of graphite material, and the stage is a circular boss on the wafer turntable. Multiple stages are evenly distributed along the circumference of the wafer turntable, and a ceramic ring is fitted on each stage. The height of the ceramic ring is higher than the height of the stage.

[0011] Furthermore, the mounting base is provided with an RF introduction device, the spindle is a hollow spindle, the spindle is insulated from the wafer turntable, and the RF introduction device is electrically connected to the wafer turntable through the inside of the spindle.

[0012] Furthermore, two spray heads are provided, and the spray heads are insulated from the cavity cover. Each spray head is provided with an RF power connector and two air inlet connectors.

[0013] Furthermore, the jet head is positioned between the two spray heads, and the jet head is provided with an air inlet. The jet head is used to spray air into the cavity to form an air curtain, dividing the cavity into two spaces.

[0014] Furthermore, a transfer port is provided on the side wall of the cavity, and the transfer port corresponds to the loading position. The bottom wall of the cavity is provided with multiple exhaust ports.

[0015] Furthermore, an isolation ring is provided on the bottom wall of the cavity, and the heating device is located inside the isolation ring.

[0016] The beneficial effects of this invention are as follows: The plasma-enhanced atomic layer deposition apparatus provided by this invention can place multiple wafers on a wafer turntable, enabling a more efficient wafer thin film deposition process, increasing the production capacity of a single device, and the structure of each part is simple, with minimal impact between components when they are maintained independently. Attached Figure Description

[0017] Figure 1 This diagram shows a schematic representation of the plasma-enhanced atomic layer deposition apparatus according to an embodiment of the present invention. Figure 2 This diagram shows a partial cross-sectional view of a plasma-enhanced atomic layer deposition apparatus according to an embodiment of the present invention. Figure 3 A cross-sectional schematic diagram of a plasma-enhanced atomic layer deposition apparatus according to an embodiment of the present invention is shown.

[0018] In the picture, 1. Cavity cover; 11. Spray head; 111. Power connector; 112. Air inlet connector; 113. Ceramic bushing; 114. Ceramic cover plate; 12. Jet head; 121. Air inlet; 2. Cavity; 21. Side wall; 22. Bottom wall; 23. Transfer port; 24. Exhaust port; 3. Wafer turntable; 31. Stage; 32. Ejector pin; 33. Ceramic ring; 4. Heating device; 5. Isolation ring; 6. Lifting device; 61. Top plate; 62. Ejector rod; 63. Sealing bellows; 71. Mounting base; 72. Spindle; 73. Motor; 74. Corrugated flange; 75. Magnetofluid; 81. Slip ring; 82. Electrode rod; 83. Electrode head; 84. Ceramic sleeve; 91. Support; 92. Driver; 10. Wafer. Detailed Implementation

[0019] The plasma-enhanced atomic layer deposition apparatus provided by the present invention will be explained and described in detail below with reference to the accompanying drawings.

[0020] The plasma-enhanced atomic layer deposition apparatus provided by this invention can place multiple wafers on a wafer turntable, enabling a more efficient wafer thin film deposition process, increasing the throughput of a single unit, and featuring a simple structure where each component is maintained independently with minimal inter-component interference. The invention will be described in detail below with reference to specific embodiments: In some embodiments, such as Figure 1 , Figure 2 , Figure 3As shown, this invention provides a plasma-enhanced atomic layer deposition (PEALD) apparatus, including a cavity cover 1 and a cavity 2. The cavity 2 includes a bottom wall 22 and side walls 21, which form a cavity. The cavity cover 1 covers the cavity 2 to seal the cavity. A sealing ring is provided at the connection between the cavity cover 1 and the wall to form a sealed contact. Optionally, an O-ring is used as the sealing ring. The cavity cover 1 is provided with spray heads 11 and jet heads 12. Multiple spray heads 11 are provided, and at least one jet head 12 is provided. The jet head 12 divides the cavity cover 1 into multiple regions, and at least one spray head 11 is provided in each region. Each spray head 11 is provided with a power connector 111 and two air inlet connectors 112 for connecting to an RF power supply. The two air inlet connectors 112 are respectively connected to two reactant supply systems for film formation. The jet head 12 is provided with an air inlet 121. Optionally, three air inlets 121 are provided for connecting to a gas supply system for purging the chamber. Both the spray head 11 and the jet head 12 have multiple microholes on their surfaces facing the interior of the cavity 2 to disperse the incoming gas and ensure that the gas is evenly sprayed out along the surface. The jet head 12 sprays gas into the cavity 2 to form an air curtain that divides the cavity into multiple spaces. In this embodiment, one jet head 12 is provided, which is a long strip structure, and two spray heads 11 are provided, with the two spray heads 11 respectively located on both sides of the jet head 12.

[0021] The spray head 11 and the cavity cover 1 are insulated from each other, optionally, such as Figure 2 As shown, a ceramic bushing 113 is provided between the spray head 11 and the chamber cover 1, forming an insulating layer. Furthermore, a ceramic cover plate 114 is also provided on the surface of the spray head 11. The power connector 111 and two air inlet connectors 112 on the spray head 11 protrude from the ceramic cover plate 114. The ceramic bushing 113 and the ceramic cover plate 114 insulate and isolate the spray head 11 from the chamber cover 1 and the external environment, so as to avoid affecting the film formation quality.

[0022] In some embodiments, a wafer turntable 3 is disposed within the cavity 2. The wafer turntable 3 is rotatably disposed within the cavity 2, and multiple platforms 31 are disposed on the wafer turntable 3. The wafer turntable 3 rotates to position the multiple platforms 31 sequentially at the loading position. The wafer turntable 3 is a circular disk made of graphite material. The platforms 31 are circular protrusions on the wafer turntable 3. The multiple platforms 31 are evenly distributed along the circumference of the wafer turntable 3. A ceramic ring 33 is fitted on each platform 31. The height of the ceramic ring 33 is higher than the height of the platform 31, so that the platform 31 and the ceramic ring 33 together form a groove for accommodating the wafer 10. The ceramic ring 33 limits the wafer 10, preventing the wafer 10 from slipping off the platform 31.

[0023] like Figure 2As shown, each stage 31 is provided with multiple ejector pins 32. The ejector pins 32 are movably inserted into the stage 31. The ejector pins 32 slide downward under their own gravity, so that their top ends are located on the upper surface of the stage 31 and are flush with the upper surface of the stage 31. At this time, the wafer 10 can be placed on the stage 31. The ejector pins 32 can lift the wafer 10 by moving upward, raising the wafer 10 to the outside of the groove, and the wafer 10 can be removed by the gripping device.

[0024] like Figure 2 As shown, a lifting device 6 is provided on the bottom wall 22 of the cavity 2. The lifting device 6 is used to lift the ejector pins 32 located on the loading platform 31. In some embodiments, the lifting device 6 includes a top plate 61 and a push rod 62. The top plate 61 is a disc structure, the size of which can cover the area where multiple ejector pins 32 are located. The push rod 62 is connected to the bottom of the top plate 61 and extends through the bottom wall 22 of the cavity 2 to the outside of the cavity 2 for connection with the drive device, so that the top plate 61 can move upward under the action of the drive device. Optionally, the drive device can be a linear motor or a hydraulic system, etc. A sealing bellows 63 is provided at the bottom of the bottom wall 22. The sealing bellows 63 is connected to the drive device and seals the position where the push rod 62 protrudes from the bottom wall 22.

[0025] A transfer port 23 is provided on the side wall 21 of the cavity 2, corresponding to the loading position. The transfer port 23 is located near the lifting device 6. The wafer 10 is transported into the cavity 2 from the transfer port 23 by the transfer mechanism. The lifting device 6 lifts the ejector pin 32 on the stage 31 at the loading position, placing the wafer 10 on the ejector pin 32. Then, the lifting device 6 controls the ejector pin 32 to descend, causing the wafer 10 to fall onto the stage 31, completing the wafer 10 loading. After the wafer 10 is processed, the lifting device 6 lifts the ejector pin 32, and the wafer 10 rises with the ejector pin 32, then is removed from the transfer port 23 by the transfer mechanism.

[0026] In some implementations, a heating device 4 is provided on the lower side of the wafer turntable 3. Optionally, the heating device 4 is connected to the bottom wall 22 of the wall via a support rod. Optionally, the heating device 4 is annular and located below the wafer turntable 3 to provide auxiliary heating. Further, an isolation ring 5 is provided on the bottom wall 22 of the cavity 2, and the heating device 4 is located inside the isolation ring 5. The isolation ring 5 is made of quartz and is used to isolate the gaseous reaction products to prevent them from entering below the wafer turntable 3 and causing contamination. Multiple exhaust ports 24 are provided on the bottom wall 22 of the cavity 2, and the reaction gases are discharged from the exhaust ports 24, which are located outside the isolation ring 5.

[0027] In some embodiments, such as Figure 3As shown, a driving assembly is provided on the bottom wall 22 of the cavity 2. The driving assembly is connected to the wafer turntable 3 to drive the wafer turntable 3 to rotate. Optionally, the driving assembly includes a rotating device, which is connected to the wafer turntable 3 to drive the wafer turntable 3 to rotate. In this embodiment, the rotating device includes a mounting base 71, a spindle 72, and a motor 73. The first end of the spindle 72 extends into the cavity 2 and connects to the wafer turntable 3. The second end of the spindle 72 is located outside the cavity 2 and is driven by the motor 73. The motor 73 is mounted on the mounting base 71, and its rotor is connected to the spindle 72 via a motor flange. Rotation of the spindle 72 can be achieved by controlling the motor 73. A corrugated flange 74 is fitted onto the spindle 72 and is located on the bottom wall 22 of the cavity 2, sealing the spindle 72 to the bottom wall 22. Optionally, a magnetic fluid 75 is also provided on the spindle 72, connected to the mounting base 71, and the corrugated flange 74 is connected to the magnetic fluid 75 to improve the sealing effect. A connecting flange is provided at the first end of the spindle 72 for connection to the wafer turntable 3. The wafer turntable 3 and the spindle 72 are insulated from each other. Optionally, a ceramic plate is provided between the connecting flange and the wafer turntable 3. The ceramic plate is fixed to the connecting flange and then connected to the wafer turntable 3. For example, the ceramic plate can be connected to the wafer turntable 3 through a ceramic pin. An RF introduction device is provided on the mounting base 71. The RF introduction device includes an electric slip ring 81 and an electrode rod 82. An electrode head 83 is provided at the first end of the electrode rod 82. The electrode head 83 passes through the spindle 72 and the flange and is electrically connected to the wafer turntable 3. Optionally, a ceramic sleeve 84 is provided on the connecting flange. The electrode head 83 passes through the ceramic sleeve 84, and the ceramic sleeve 84 achieves insulation between the electrode head 83 and the electrode rod 82 and the connecting flange.

[0028] The second end of the electrode rod 82 is electrically connected to the slip ring 81, which is connected to the radio frequency power supply. The radio frequency power supply is led to the wafer turntable 3 through the slip ring 81, the electrode rod 82, and the electrode head 83. The slip ring 81 is mounted on the mounting base 71 and connected to the second end of the spindle 72. The slip ring 81 and the second end of the spindle 72 are sealed together.

[0029] In some embodiments, the drive assembly further includes a lifting device, and a rotating device is connected to the lifting device. The lifting device can drive the wafer turntable 3 to rise or fall by rotating the device, thereby adjusting the distance between the wafer and the spray head 11. When performing atomic deposition on the wafer, the distance between the wafer and the spray head 11 is made closer to ensure that the radio frequency electric field can excite plasma generation. When placing or removing the wafer, the distance between the wafer turntable 3 and the cavity cover 1 is made larger to facilitate wafer gripping.

[0030] Optionally, such as Figure 3As shown, the lifting device includes a bracket 91, which is mounted on the bottom wall 22 of the cavity 2. A driver 92 is mounted on the bracket 91, and the mounting base 71 is connected to the driver 92. The driver 92 is used to drive the mounting base 71 to lift.

[0031] In some embodiments, the operation of the plasma-enhanced atomic layer deposition apparatus of the present invention includes: The lifting device descends to the transfer position. The robotic arm, which enters through transfer port 23, carries the wafer and stops above the stage 31. The lifting device 6 lifts the ejector pin 32 to lift the wafer 10. The robotic arm retracts, the ejector pin 32 falls, and the wafer 10 lands on the stage 31. The motor 73 rotates, and the wafers 10 are placed on the wafer turntable 3 in sequence according to the above steps. Since the plasma generated by the radio frequency electric field requires an appropriate electrode spacing, the lifting mechanism raises the wafer turntable 3 to a suitable position. At this time, the two spray heads 11 act as one stage of the radio frequency electric field, and the wafer 10 acts as the other stage. During the process, the two spray heads 11... Two reactants for generating atomic layer deposition films are introduced into the nozzle 12, and a purge gas is introduced to divide the space above the wafer turntable 3 into two parts. The rotating wafer turntable 3 carries the wafer 10 through the two regions one after another. When the wafer 10 passes under the nozzle 11, the radio frequency electric field excites the gas in the middle to generate plasma, thereby achieving the deposition effect. After passing through the two plasma regions, one atomic layer deposition process is completed. The auxiliary heating device 4 can provide a suitable thermal environment to reduce the plasma excitation voltage, electrode spacing and other conditions, thereby providing a wider environment for process debugging and adjustment.

[0032] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0033] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0034] In the description of this specification, the references to terms such as "this embodiment," "an embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in a suitable manner in any at least one embodiment or example. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0035] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0036] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, and simple improvements made on the substantive content of the present invention should be included within the protection scope of the present invention.

Claims

1. A plasma-enhanced atomic layer deposition apparatus, characterized in that, include: A cavity cover, on which a spray head and an air jet head are provided; A cavity, the cavity including a bottom wall and side walls, the bottom wall and side walls forming a cavity, and a cavity cover covering the cavity to seal the cavity; A wafer turntable is rotatably disposed within the cavity. The wafer turntable is provided with multiple stages, and each stage is provided with multiple ejector pins. The ejector pins are movably disposed on the stage. The wafer turntable rotates to position the multiple stages sequentially at the loading position. A lifting device is provided on the cavity, and the lifting device is used to lift the ejector pin on the platform located at the feeding position; A heating device is located on the underside of the wafer turntable.

2. The plasma-enhanced atomic layer deposition apparatus according to claim 1, characterized in that, A drive assembly is provided on the bottom wall of the cavity. The drive assembly includes a lifting device and a rotating device. The rotating device is connected to the lifting device and is connected to the wafer turntable.

3. The plasma-enhanced atomic layer deposition apparatus according to claim 2, characterized in that, The rotating device includes a mounting base, a spindle, and a motor. The first end of the spindle passes through the cavity and is connected to the wafer turntable. The second end of the spindle is driven by the motor, which is mounted on the mounting base.

4. The plasma-enhanced atomic layer deposition apparatus according to claim 3, characterized in that, The lifting device includes a bracket, which is installed on the bottom wall of the cavity. A driver is mounted on the bracket, and the mounting base is connected to the driver. The driver is used to drive the mounting base to lift.

5. The plasma-enhanced atomic layer deposition apparatus according to claim 3, characterized in that, The wafer turntable is a circular disk made of graphite. The stage is a circular protrusion on the wafer turntable. Multiple stages are evenly distributed along the circumference of the wafer turntable. Each stage is fitted with a ceramic ring, and the height of the ceramic ring is higher than the height of the stage.

6. The plasma-enhanced atomic layer deposition apparatus according to claim 5, characterized in that, The mounting base is equipped with an RF introduction device. The spindle is a hollow shaft and is insulated from the wafer turntable. The RF introduction device is electrically connected to the wafer turntable through the inside of the spindle.

7. The plasma-enhanced atomic layer deposition apparatus according to claim 1, characterized in that, Two spray heads are provided, and the spray heads are insulated from the cavity cover. Each spray head is provided with one radio frequency power connector and two air inlet connectors.

8. The plasma-enhanced atomic layer deposition apparatus according to claim 7, characterized in that, The jet head is positioned between the two spray heads and has an air inlet. The jet head is used to spray air into the cavity to form an air curtain, dividing the cavity into two spaces.

9. The plasma-enhanced atomic layer deposition apparatus according to claim 1, characterized in that, A transfer port is provided on the side wall of the cavity, and the transfer port corresponds to the loading position. The bottom wall of the cavity is provided with multiple exhaust ports.

10. The plasma-enhanced atomic layer deposition apparatus according to claim 1, characterized in that, An isolation ring is provided on the bottom wall of the cavity, and the heating device is located inside the isolation ring.

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