Wideband circularly polarized scattering reconfigurable array antenna based on varactor loading

Abstract

The application discloses a broadband circularly polarized scattering reconfigurable array antenna based on a varactor loading, which is composed of a plurality of scattering reconfigurable antenna units, and each scattering reconfigurable antenna unit comprises a resonant structure for radiating or receiving signals and a feeding and phase-shifting structure arranged on the lower surface of the resonant structure, wherein the feeding and phase-shifting structure comprises a broadband directional coupler and a reflective broadband phase shifter; when the scattering reconfigurable antenna unit is in a radiation working state, the broadband directional coupler radiates energy to the resonant structure; when the scattering reconfigurable antenna unit is in a scattering working state, the broadband directional coupler transmits energy to the reflective broadband phase shifter, and the reflective broadband phase shifter adjusts the energy of secondary radiation according to a bias voltage applied to an internal varactor. The array antenna provided by the application has a wide working frequency band, and can ensure the radiation performance while realizing the reconfiguration of scattering characteristics.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of antennas, and particularly relates to a wideband circularly polarized scattering reconfigurable array antenna based on a varactor diode load. BACKGROUND

[0002] Once a conventional antenna is designed, its scattering characteristics are fixed and unchangeable. Low scattering characteristics can be achieved in a certain angular range through operations such as loading of wave-absorbing materials and reshaping. However, with the development of new anti-stealth early warning means such as networking detection, such low scattering antennas with fixed scattering characteristics still face great challenges. Therefore, it is an urgent need to study antennas with reconfigurable scattering characteristics. However, the current scattering reconfigurable design of polarized antennas has the problems of low antenna radiation efficiency and narrow working bandwidth.

[0003] Specifically, the current scattering reconfigurable antennas mainly rely on the loading of radio frequency switches such as PIN diodes or micro-electromechanical system switches. However, the integration of a large number of PIN diodes and other devices not only makes the antenna structure complex, but also inevitably reduces the radiation efficiency of the antenna, affecting the radiation performance of the antenna. In addition, due to the limited state of the PIN diode, the regulation state of the antenna array scattering beam is limited to a certain extent. SUMMARY

[0004] The embodiment of the application provides a wideband circularly polarized scattering reconfigurable array antenna based on a varactor diode load, which can solve the above technical problems.

[0005] The embodiment of the application provides a wideband circularly polarized scattering reconfigurable array antenna based on a varactor diode load, which is composed of a plurality of scattering reconfigurable antenna units with the same structure, and the scattering reconfigurable antenna unit comprises:

[0006] a resonant structure for radiating or receiving signals;

[0007] a feeding and phase-shifting structure arranged on the lower surface of the resonant structure, the feeding and phase-shifting structure comprising a wideband directional coupler and a reflective wideband phase shifter located in the same plane, and the isolation end of the wideband directional coupler being connected with the input end of the reflective wideband phase shifter;

[0008] When the scattering reconfigurable antenna unit is in a radiation working state, the wideband directional coupler is used for radiating energy to the resonant structure; when the scattering reconfigurable antenna unit is in a scattering working state, the wideband directional coupler is used for transmitting energy to the reflective wideband phase shifter, and the reflective wideband phase shifter is used for regulating the energy of its secondary radiation according to the bias voltage applied to the internal varactor diode.

[0009] Compared with the prior art, the embodiment of the present application has the beneficial effects that: the present application replaces the traditional PIN diode with a varactor diode, adjusts the energy size of the phase shifter secondary radiation by adjusting the bias voltage applied to the varactor diode, can continuously regulate the multi-state scattering beam, and greatly expands the working bandwidth of the antenna unit; the isolation characteristics of the wideband directional coupler separate the radiation and scattering paths of the antenna unit, which can avoid the influence of the regulation of the scattering characteristics of the antenna unit on its radiation performance. BRIEF DESCRIPTION OF DRAWINGS

[0010] Figure 1 A structure schematic diagram of a scattering reconfigurable antenna unit is provided for the embodiment of the present application;

[0011] Figure 2 A structure schematic diagram of a reflective wideband phase shifter is provided for the embodiment of the present application;

[0012] Figure 3 A size schematic diagram of a reflective wideband phase shifter is provided for the embodiment of the present application;

[0013] Figure 4 A structure and size schematic diagram of an impedance conversion straight-line coupler is provided for the embodiment of the present application;

[0014] Figure 5 A structure schematic diagram of a first reflective load is provided for the embodiment of the present application;

[0015] Figure 6 A structure and size schematic diagram of a metal blind hole and a dielectric substrate is provided for the embodiment of the present application;

[0016] Figure 7 A connection mode schematic diagram of a varactor diode is provided for the embodiment of the present application;

[0017] Figure 8 A size schematic diagram of a fourth metal blind hole, a metal patch and a feeding probe is provided for the embodiment of the present application;

[0018] Figure 9 A structure schematic diagram of a wideband circularly polarized scattering reconfigurable array antenna based on varactor diode loading including a plurality of reconfigurable antenna units is provided for the embodiment of the present application;

[0019] Figure 10a A simulation result diagram of the scattering characteristics of the antenna unit when the working frequency is 8.5GHz is provided for the embodiment of the present application;

[0020] Figure 10b A simulation result diagram of the scattering characteristics of the antenna unit when the working frequency is 10z is provided for the embodiment of the present application;

[0021] Figure 10c A simulation result diagram of scattering characteristics of an antenna unit at a working frequency of 11GHz is provided for an embodiment of the present application;

[0022] Figure 11a A schematic diagram of voltage standing wave ratio of a wideband circularly polarized scattering reconfigurable array antenna under different working states is provided for an embodiment of the present application;

[0023] Figure 11b A schematic diagram of gain of a wideband circularly polarized scattering reconfigurable array antenna under different working states is provided for an embodiment of the present application;

[0024] Figure 11c A schematic diagram of axial ratio of a wideband circularly polarized scattering reconfigurable array antenna under different working states is provided for an embodiment of the present application;

[0025] Figure 11d A radiation pattern of a wideband circularly polarized scattering reconfigurable array antenna at a working frequency of 8.5GHz is provided for an embodiment of the present application;

[0026] Figure 11e A radiation pattern of a wideband circularly polarized scattering reconfigurable array antenna at a working frequency of 10GHz is provided for an embodiment of the present application;

[0027] Figure 11f A radiation pattern of a wideband circularly polarized scattering reconfigurable array antenna at a working frequency of 11.5GHz is provided for an embodiment of the present application.

[0028] Reference signs:

[0029] 10: antenna unit; 1: feeding and phase-shifting structure; 11: wideband directional coupler; 12: reflection type wideband phase shifter; 121: impedance transformation straight line coupler; 2: resonant structure; 20: plug-in structure; 30: ground plug-in; ML1: first microstrip line; ML2: second microstrip line; ML3: third microstrip line; C: capacitor; R1: first reflection load; R2: second reflection load; L1: first inductor; L2: second inductor; LA: first vertical arm; LB: second vertical arm; LC: third vertical arm; LD: first horizontal arm; LE: second horizontal arm; D1: first varactor diode; D2: second varactor diode; SUB1: first dielectric substrate; SUB2: second dielectric substrate; SUB3: third dielectric substrate; SUB4: fourth dielectric substrate; M1: metal floor; M2: feeding probe; M3: first metal patch; M4: second metal patch; VIA1: first metal blind hole; VIA2: second metal blind hole; VIA3: third metal blind hole; VIA4: fourth metal blind hole. DETAILED DESCRIPTION

[0030] The application will be described in further detail below with reference to the drawings. The embodiments of this application are not limited to this.

[0031] Embodiment 1

[0032] Figure 1 A structure diagram of a scattering reconfigurable antenna unit is shown. As an example but not limitation, the antenna unit 10 (i.e. Figure 1 in the scattering reconfigurable antenna unit) can include a feeding and phase-shifting structure 1 and a resonant structure 2.

[0033] In some embodiments, the feeding and phase-shifting structure 1 can be arranged on the lower surface of the resonant structure 2; see Figure 1 , the feeding and phase-shifting structure 1 can include a broadband directional coupler 11 and a reflective broadband phase shifter 12 in the same plane.

[0034] For example, the isolation port of the broadband directional coupler 11 can be connected to the input port of the reflective broadband phase shifter 12.

[0035] Specifically, see the solid arrow in (a) of Figure 2 , when the antenna unit 10 is in a radiation working state, energy is input from the input port of the broadband directional coupler 11, and then radiated to the resonant structure 2 through the first output port and the second output port of the broadband directional coupler 11; see the dashed arrow in (a) of Figure 2 , when the antenna unit 10 is in a scattering working state, the incident wave passes through the broadband directional coupler 11, half of the energy is absorbed by the load at the input port of the broadband directional coupler 11, and the other half enters the reflective broadband phase shifter 12 through the isolation port, and the reflective broadband phase shifter 12 will regulate the energy of its secondary radiation to the resonant structure 2 based on the bias voltage applied to the internal varactor diode.

[0036] In a possible implementation, see (b) of Figure 2 , it can be seen that the broadband directional coupler 11 can be composed of a microstrip line similar to "H" shape, which can be a 3dB directional coupler. See (a) of Figure 3 , the input port can be soldered on the surface mount pad (SMP), and the output port can be connected to the resonant structure 2,

[0037] The 3dB directional coupler has high isolation, so the dynamic regulation of the scattering performance of the antenna unit will not affect the radiation performance of the antenna unit 10.

[0038] For example, see Figure 3In (b) of FIG. 1, the dimensions of the wideband directional coupler 11 can be: W4 = 0.72 mm, W5 = 0.1 mm, W6 = 1.1 mm, L2 = 5.4 mm, L3 = 1 mm, L4 = 6.86 mm, L5 = 1 mm, L6 = 1.15 mm, L7 = 3.43 mm, L8 = 2.65 mm.

[0039] In one possible implementation, referring to Figure 2 In (b) of FIG. 1, the reflective wideband phase shifter 12 can include a first microstrip line ML1, a capacitor C, and an impedance transformation straight-line coupler 121.

[0040] Exemplarily, referring to Figure 2 In (a) and (b) of FIG. 1, the first microstrip line ML1 can be in the shape of “H”, and the ends of the four arms starting from the upper left corner can be the first to fourth ports of the first microstrip line ML1, respectively. The first port of the first microstrip line ML1 can be connected to the isolation port of the wideband directional coupler 11 as the input end of the reflective wideband phase shifter 12, the second port can be connected to the capacitor C, and the third and fourth ports can be connected to the first and second input ends of the impedance transformation straight-line coupler 121, respectively.

[0041] Optionally, the capacitor C can be a 0201 type capacitor with a capacitance of 5 pF.

[0042] In one example, referring to Figure 4 In (a) of FIG. 1, the impedance transformation straight-line coupler 121 can include a first reflective load R1, a second reflective load R2, a first inductor L1, a second inductor L2, and a second microstrip line ML2.

[0043] Optionally, the working frequency of the first inductor L1 and the second inductor L2 includes the X frequency band, and the type can be 0201DS-5N0XJEW.

[0044] Exemplarily, the first reflective load R1 and the second reflective load R2 are the same in structure and symmetrically arranged. The first ports of the first reflective load R1 and the second reflective load R2 can be the first input end and the second input end of the impedance transformation straight-line coupler 121, respectively. The first port of the first reflective load R1 can be connected to the first port of the second microstrip line ML2 through the first inductor L1, and the second port can be connected to the second port of the second microstrip line ML2 through the second inductor L2.

[0045] Exemplarily, the second microstrip line ML2 can be a transmission line with a characteristic impedance and an electrical length.

[0046] In particular, referring to Figure 5The first reflective load R1 may include a third microstrip line ML3, a first varactor diode D1, and a second varactor diode D2. The third microstrip line ML3 includes a first vertical arm LA, a second vertical arm LB, a third vertical arm LC, a first horizontal arm LD, and a second horizontal arm LE. The left and right ends of the first horizontal arm LD are connected to the lower end of the first vertical arm LA and the upper end of the second vertical arm LB, respectively. The left and right ends of the second horizontal arm LE are connected to the lower end of the second vertical arm LB and the upper end of the third vertical arm LC, respectively, forming a horizontal "U"-shaped third microstrip line ML3. The upper end of the first vertical arm LA serves as the first port of the first reflective load R1. The first varactor diode D1 is reverse-loaded on the first vertical arm LA, and the second varactor diode D2 is reverse-loaded on the lower end of the third vertical arm LC. The second horizontal arm LD is connected to the first inductor L1.

[0047] Optionally, see Figure 4 In (b), the dimensions of the impedance transformation linear coupler 121 can be: W7 = 0.1 mm, L9 = 1.56 mm, L10 = 0.6 mm, L11 = 0.4 mm, L12 = 1.1 mm, L13 = 0.4 mm.

[0048] Optionally, the first varactor diode D1 and the second varactor diode D2 can be of model number MAVR-000120-1411.

[0049] The dynamic control of antenna scattering can be achieved by controlling the bias voltage state across the varactor diodes inside the first varactor diode D1, the second varactor diode D2, and the second reflective load R2.

[0050] In one possible implementation, see Figure 1 The resonant structure 2 may include a first dielectric substrate SUB1, a metal ground plane M1, a second dielectric substrate SUB2, a third dielectric substrate SUB3, and a fourth dielectric substrate SUB4, which are stacked sequentially from bottom to top.

[0051] For example, see Figure 1 The upper surface of the second dielectric substrate SUB2 is also provided with an "L"-shaped feed probe M2 and a DC bias line connected to the DC control system. Figure 2 (Not shown in the image). A first metal patch M3 is disposed on the upper surface of the third dielectric substrate SUB3, and a second metal patch M4 is disposed on the upper surface of the fourth dielectric substrate SUB4.

[0052] In one example, see Figure 6The second dielectric substrate SUB2 may also have a first metal blind via VIA1 and a second metal blind via VIA2 penetrating the second dielectric substrate SUB2, the metal ground plane M1, and the first dielectric substrate SUB1. The first dielectric substrate SUB1 may also have a third metal blind via VIA3 penetrating the first dielectric substrate SUB1.

[0053] For example, see Figure 4 In (a), the first metal blind via VIA1 can be disposed at the output terminal in the middle of the second microstrip line ML2. The negative terminals of the varactor diodes in the first reflective load R1 and the second reflective load R2 can be connected to the DC bias line on the upper surface of the second dielectric substrate SUB2 through the second microstrip line ML2 and the first metal blind via VIA1. Then, see... Figure 7 It is connected to the positive terminal of the power supply in the DC control system via a DC bias line. See also Figure 5 The third metal blind aperture VIA3 can be located at the positive terminal of the varactor diode (see the dashed semicircle at the positive terminal of the varactor diode in the figure). The first varactor diode D1, the second varactor diode D2, and the varactor diode in the second reflective load R2 can be connected to the metal ground plate M1 through the third metal blind aperture VIA3. The metal ground plate M1 is then connected to the negative terminal of the power supply in the DC control system. The DC control system controlling the power supply can apply a bias voltage to the reflective broadband phase shifter 12 through the varactor diode, thereby regulating the energy of the secondary radiation of the reflective broadband phase shifter 12 and thus reconstructing the scattering characteristics of the antenna element 10.

[0054] For example, see Figure 2 In (a), the second metal blind hole VIA2 can be disposed at the output end of the broadband directional coupler 11, and the broadband directional coupler 11 can be connected to the feed probe M2 on the upper surface of the second dielectric substrate SUB2 through the second metal blind hole VIA2.

[0055] For example, the surface of all metal blind holes can be coated with a metal layer.

[0056] Optionally, the radii of both the first metal blind via VIA1 and the second metal blind via VIA2 can be r1 = 0.2mm. The DC bias line can be a metal conductor with a line width of 0.1mm.

[0057] For example, see Figure 8 In (a) of the above, a fourth metal blind via VIA4 for preventing short circuits may also be provided on the metal floor M1. The fourth metal blind via VIA4 may be provided above the first metal blind via VIA1 / the second metal blind via VIA2.

[0058] Optionally, the radius of the fourth metal blind hole VIA4 can be either r3 = 0.7 mm or r2 = 0.4 mm.

[0059] In one example, the first to fourth dielectric substrates can all be rectangular substrates, and correspondingly, the first and second metal patches can also be rectangular patches. The first dielectric substrate SUB1 can be made of a non-metallic material with a dielectric constant of 6.15, such as Rogers; the third to fourth dielectric substrates can all be made of a non-metallic material with a dielectric constant of 2.2, such as F4B. The metal ground plane M1, the feed probe M2, the first metal patch M3, the second metal patch M4, the feed and phase shifting structure 1, and the DC bias line can all be made of copper.

[0060] Here, using dielectric materials with dielectric constants of 2.2 and 6.15 to fabricate the dielectric substrate can reduce material costs and simplify antenna design processes.

[0061] For example, any two substrates can be bonded together using a prepreg, such as Rogers RO4450F. The prepreg can have a dielectric constant of 3.5 and a loss tangent of 0.004.

[0062] For example, the first metal patch M3 and the second metal patch M4 can be formed by extending two rectangular patches, with the width of the first metal patch M3 being slightly wider than that of the second metal patch M4, in order to broaden the antenna bandwidth.

[0063] Optionally, see Figure 8 In (b), the widths W1 and W2 of the first metal patch M3 and the second metal patch M4 can be: W2 = 6mm and W1 = 7.8mm.

[0064] For example, the angle between the two metal patches included in the "L"-shaped feed probe M2 can be 90°. When the antenna element 10 is in the radiation operation state, after the energy is input through the input terminal of the feed and phase shifting structure 1, it is transmitted to the two branches of the "L"-shaped feed probe M2 with equal amplitude and 90° phase difference through the broadband directional coupler 11, and coupled to the first metal patch M3 and the second metal patch M4 to achieve circular polarization characteristics.

[0065] Optionally, see Figure 8 In (c), the dimensions of the power supply probe M2 can be: W3 = 0.8mm, L1 = 3.4mm.

[0066] For example, the side length W of the first to fourth dielectric substrates can all be 18 mm; see [link to relevant documentation]. Figure 6 The thicknesses of the first to fourth dielectric substrates are respectively: H1=2.5mm, H2=0.5mm, H3=2mm, H4=0.5mm.

[0067] Optionally, the tangent of the loss angle of the first dielectric substrate SUB1 can be 0.0025, and the tangent of the loss angle of the second to fourth dielectric substrates can all be 0.0009.

[0068] The application replaces the conventional PIN diode with a varactor diode, adjusts the energy size of the secondary radiation of the phase shifter by adjusting the bias voltage applied to the varactor diode, can realize multi-state continuous regulation of the scattered beam, and greatly expands the working bandwidth of the antenna unit; the isolation characteristics of the wideband directional coupler can separate the radiation and scattering paths of the antenna unit, and can avoid the influence of the regulation of the scattering characteristics of the antenna unit on the radiation performance.

[0069] Further, the application uses the varactor diode as an electrically controlled element, can improve the response speed, performance stability and regulation performance flexibility, uses an external DC control system, can control the state of the antenna in real time while reducing the complexity of the control system, has practical application value. The antenna unit can realize continuous dynamic regulation of the scattered beam of 0°~45° in the working frequency band (X frequency band).

[0070] Embodiment 2

[0071] Based on the embodiment 1, Figure 9 A structure schematic diagram of a wideband circularly polarized scattering reconfigurable array antenna loaded based on a varactor diode provided by the embodiment of the application is provided.

[0072] In a possible implementation manner, referring to Figure 9 The wideband circularly polarized scattering reconfigurable array antenna can be composed of multiple linear antenna arrays, and each linear antenna array is composed of multiple antenna units 10 provided in the embodiment 1.

[0073] For example, each linear antenna array can include 8 antenna units 10, and the wideband circularly polarized scattering reconfigurable array antenna can include 8 linear antenna arrays.

[0074] In an example, the wideband circularly polarized scattering reconfigurable array antenna can further include a power strip structure 20, in each antenna unit, one end of the DC bias line is connected to the negative electrode of the varactor diode through the first metal blind hole VIA1, and the other end is connected to the power strip structure 20, and then connected to the positive electrode of the power supply in the DC control system through the power strip structure.

[0075] For example, referring to Figure 9 The power strip structure can be alternately and uniformly distributed on both sides of the wideband circularly polarized scattering reconfigurable array antenna.

[0076] Optionally, referring to Figure 9The wideband circularly polarized scattering reconfigurable array antenna can further include a grounding strip 30, which can be arranged at a corner of the wideband circularly polarized scattering reconfigurable array antenna.

[0077] In order to better illustrate the beneficial effects of the present application, the following simulation experiments are carried out:

[0078] For example, in the simulation experiment, the antenna unit 10 in embodiment 1 and the wideband circularly polarized scattering reconfigurable array antenna in embodiment 2 are modeled and simulated by using the commercial simulation software ANSYS HFSS.

[0079] Referring to Figure 10a~Figure 10c As shown in the simulation result diagram of the scattering characteristics of the antenna unit 10 at three typical working frequency points, it can be seen that by controlling the state of the varactor diode loaded on the antenna unit 10, the antenna unit 10 provided by the present application can realize dynamic regulation and control of the scattering characteristics in a wide frequency band.

[0080] Referring to Figure 11a~Figure 11f As shown in the schematic diagram of the Voltage Standing Wave Ratio (VSWR), gain, axial ratio and radiation pattern parameters of the wideband circularly polarized scattering reconfigurable array antenna at three typical frequency points, it can be seen that the wideband circularly polarized scattering reconfigurable array antenna provided by the present application can maintain stable radiation performance at different scattering states.

[0081] In the present application, the varactor diode is used to replace the traditional PIN diode, and the energy size of the secondary radiation of the phase shifter is adjusted by adjusting the bias voltage applied to the varactor diode, which can realize continuous regulation and control of the multi-state scattering beam, greatly expanding the working bandwidth of the antenna unit; the isolation characteristics of the wideband directional coupler can separate the radiation and scattering paths of the antenna unit, which can avoid the influence of the regulation and control of the scattering characteristics of the antenna unit on its radiation performance.

[0082] In the above embodiments, the description of each embodiment has its own emphasis, and the parts not described or recorded in detail in a certain embodiment can be referred to the related description of other embodiments.

Claims

1. A broadband circularly polarized scattering reconfigurable array antenna based on varactor diode loading, characterized in that, The broadband circularly polarized reconfigurable array antenna is composed of multiple scattering reconfigurable antenna units with the same structure. Each scattering reconfigurable antenna unit includes: A resonant structure for radiating or receiving signals; A feeding and phase-shifting structure disposed on the lower surface of the resonant structure. The feeding and phase-shifting structure includes a broadband directional coupler and a reflective broadband phase shifter located in the same plane. The isolation end of the broadband directional coupler is connected to the input end of the reflective broadband phase shifter; Wherein, when the scattering reconfigurable antenna unit is in the radiation operating state, the broadband directional coupler is used to radiate energy to the resonant structure; when the scattering reconfigurable antenna unit is in the scattering operating state, the broadband directional coupler is used to transmit energy to the reflective broadband phase shifter, and the reflective broadband phase shifter is used to regulate the energy of its own secondary radiation according to the bias voltage applied to the internal varactor diode; Wherein, the reflective broadband phase shifter includes: a first microstrip line, a capacitor, and an impedance transformation straight-line coupler; The first port of the first microstrip line serves as the input end of the reflective broadband phase shifter and is connected to the isolation end of the broadband directional coupler. The second port is connected to the capacitor, and the third and fourth ports are respectively connected to the first and second input ends of the impedance transformation straight-line coupler; Wherein, the impedance transformation straight-line coupler includes a first reflective load, a second reflective load, a first inductor, a second inductor, and a second microstrip line; The first port of the first reflective load serves as the first input end of the impedance transformation straight-line coupler, and the first reflective load is connected to the first port of the second microstrip line through the first inductor; The first port of the second reflective load serves as the second input end of the impedance transformation straight-line coupler, and the second reflective load is connected to the second port of the second microstrip line through the second inductor. Wherein, the first reflective load and the second reflective load are symmetrically arranged and have the same structure; Wherein, the first reflective load includes a third microstrip line, a first varactor diode, and a second varactor diode; The third microstrip line includes a first vertical arm, a second vertical arm, a third vertical arm, a first horizontal arm, and a second horizontal arm. The left and right ends of the first horizontal arm are respectively connected to the lower end of the first vertical arm and the upper end of the second vertical arm. The left and right ends of the second horizontal arm are respectively connected to the lower end of the second vertical arm and the upper end of the third vertical arm to form the third microstrip line in the shape of a horizontal "Ji"; The upper end of the first vertical arm serves as the first port of the first reflective load. The first varactor diode is reversely loaded on the first vertical arm, the second varactor diode is reversely loaded on the lower end of the third vertical arm, and the second horizontal arm connects the first inductor.

2. The broadband circularly polarized scattering reconfigurable array antenna according to claim 1, characterized in that, The resonant structure includes a first dielectric substrate, a metal floor, a second dielectric substrate, a third dielectric substrate, and a fourth dielectric substrate stacked in sequence from bottom to top; The upper surface of the second dielectric substrate is provided with an "L"-shaped feeding probe and a DC bias line. The upper surfaces of the third dielectric substrate and the fourth dielectric substrate are respectively provided with a first metal patch and a second metal patch.

3. The broadband circularly polarized scattering reconfigurable array antenna according to claim 2, characterized in that, The second dielectric substrate is provided with a first metal blind via and a second metal blind via penetrating the second dielectric substrate, the metal ground plane and the first dielectric substrate, and the first dielectric substrate is provided with a third metal blind via penetrating the first dielectric substrate. The negative terminals of the first varactor diode and the second varactor diode are connected to the DC bias line through the first metal blind via, and the positive terminals are connected to the metal ground plane through the third metal blind via; the output terminal of the broadband directional coupler is connected to the feed probe through the second metal blind via.

4. The broadband circularly polarized scattering reconfigurable array antenna according to claim 3, characterized in that, The metal ground plane is connected to the negative terminal of the power supply, and the DC bias line is connected to the positive terminal of the power supply. The DC control system that controls the power supply applies a bias voltage to the reflective broadband phase shifter through a varactor diode, thereby regulating the energy of the secondary radiation from the reflective broadband phase shifter to reconstruct the scattering characteristics of the scattering reconfigurable antenna element.

5. The broadband circularly polarized scattering reconfigurable array antenna according to claim 4, characterized in that, The broadband circularly polarized scattering reconfigurable array antenna includes a multi-column linear antenna array and multiple plug-in structures, with each column of the linear antenna array consisting of multiple reconfigurable antenna elements; The plug-in structure is alternately distributed at both ends of the broadband circularly polarized scattering reconfigurable array antenna; the DC bias line of each reconfigurable antenna element inside the linear antenna array is connected to the plug-in structure and connected to the DC control system through the plug-in structure.

6. The broadband circularly polarized scattering reconfigurable array antenna according to claim 1, characterized in that, The operating frequencies of the first inductor and the second inductor include the X-band.

7. The broadband circularly polarized scattering reconfigurable array antenna according to claim 1, characterized in that, The broadband directional coupler is a 3dB directional coupler.

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