Dot matrix projection generation method and device based on vertical cavity surface emitting laser array

Abstract

The invention discloses a dot matrix projection generation method and device based on a vertical cavity surface emitting laser array. The method comprises the following steps: calculating read array parameters according to a complex amplitude calculation function to obtain incident complex amplitude; determining target intensity dot matrix information corresponding to the array parameters according to a set rule; sending an initial setting instruction to the super lens to set an initial random phase; performing diffraction propagation analysis on the initial random phase and the incident complex amplitude according to a diffraction function to obtain a target surface complex amplitude, and performing iterative optimization on the initial random phase based on the target surface complex amplitude to obtain a target dot matrix phase; and generating a phase setting instruction according to the target dot matrix phase and sending the instruction to the super-lens to obtain a target dot matrix projection obtained by the super-lens through light beam phase adjustment. According to the method, iterative optimization is carried out by utilizing the complex amplitude emitted to the super lens by the laser array and combining with the gradient descent algorithm, so that the target dot matrix phase is obtained, and the quality of the generated dot matrix projection is improved.

Description

Technical Field

[0001] This invention relates to the field of metasurface device control technology, and in particular to a method and apparatus for generating dot projection based on a vertical cavity surface-emitting laser array. Background Technology

[0002] With the rapid development of 3D sensing, machine vision, and other fields, the demand for dot projection technology in terms of integration, flexibility, and customization is increasing. Vertical-Cavity Surface-Emitting Lasers (VCSELs) have become ideal light sources for dot projection due to their small size, low power consumption, and stable beam quality. Traditional dot projection methods typically use collimating lenses to collimate the light from the VCSEL array, and then use diffraction optical elements (DOEs) to project the collimated light into the dot matrix. This results in a complex system structure and large size, limiting its application in miniaturized devices. In recent years, superlenses, with their subwavelength thickness and flexible beam control capabilities, have gradually replaced the traditional combination of collimating lenses and DOEs. By designing the phase of the superlens to be equal to the sum of the phases of the collimating lens and the DOE, dot projection can be achieved, improving system integration to some extent. However, due to the different incident angles of the light sources in the VCSEL array onto the superlens, the superlens responds differently to each light source, resulting in inherent intensity variations in the dot matrix projection generated by this design scheme related to the arrangement of the light sources. In other words, the dot matrix projection is affected by the inherent intensity related to the light source arrangement, leading to low quality and making it difficult to meet the requirements for arbitrary intensity dot matrices in different scenarios. Therefore, the dot matrix projection generated using vertical-cavity surface-emitting lasers in existing technologies suffers from low quality. Summary of the Invention

[0003] This invention provides a method for generating dot matrix projections based on a vertical cavity surface-emitting laser array, aiming to solve the problem of low quality in dot matrix projections generated by vertical cavity surface-emitting lasers in existing methods.

[0004] In a first aspect, embodiments of the present invention provide a method for generating a dot matrix projection based on a vertical-cavity surface-emitting laser (VCSEL) array. The method is applied in a control terminal, which establishes communication connections with both the VCSEL array and a superlens to transmit data. The superlens is positioned on the light-emitting path of the VCSEL array, which is composed of multiple VCSELs arranged in a grid. The method includes: The array parameters of the vertical cavity surface-emitting laser array are read, and the array parameters are calculated according to the preset complex amplitude calculation function to obtain the complex amplitude of each laser as the incident complex amplitude; The target intensity dot matrix information corresponding to the array parameters is determined according to the preset setting rules; Send an initial setting command to the superlens to set the superlens to an initial random phase; The initial random phase and the incident complex amplitude are analyzed by diffraction propagation according to the preset diffraction function to obtain the corresponding target surface complex amplitude; The initial random phase is iteratively optimized based on the diffraction function, the complex amplitude of the target surface, and the target intensity lattice information to obtain the target lattice phase corresponding to the preset iterative optimization parameters; A corresponding phase setting command is generated based on the target dot matrix phase and sent to the superlens, so that the superlens can adjust the beam phase to obtain a target dot matrix projection corresponding to the setting rule.

[0005] Secondly, embodiments of the present invention also provide a dot matrix projection generation device based on a vertical-cavity surface-emitting laser array, wherein the device includes a control terminal, a vertical-cavity surface-emitting laser array, and a superlens. The control terminal establishes communication connections with the vertical-cavity surface-emitting laser array and the superlens respectively to realize the transmission of data information. The superlens is disposed on the light output path of the vertical-cavity surface-emitting laser array, and the vertical-cavity surface-emitting laser array is composed of multiple vertical-cavity surface-emitting lasers arranged in a row. The control terminal is used to execute the dot matrix projection generation method based on a vertical cavity surface-emitting laser array as described in the first aspect above.

[0006] Thirdly, embodiments of the present invention also provide a computer device, wherein the device includes a processor, a communication interface, a memory, and a communication bus, wherein the processor, the communication interface, and the memory communicate with each other through the communication bus; Memory, used to store computer programs; When a processor executes a program stored in a memory, it implements the steps of the dot matrix projection generation method based on a vertical cavity surface-emitting laser array as described in the first aspect above.

[0007] Fourthly, embodiments of the present invention also provide a computer-readable storage medium having a computer program stored thereon, wherein the computer program, when executed by a processor, implements the steps of the dot matrix projection generation method based on a vertical cavity surface-emitting laser array as described in the first aspect above.

[0008] This invention provides a method for generating a dot matrix projection based on a vertical-cavity surface-emitting laser array. The method includes: calculating the incident complex amplitude from the array parameters read using a complex amplitude calculation function; determining the target intensity dot matrix information corresponding to the array parameters according to a set rule; sending an initial setting command to a superlens to set an initial random phase; performing diffraction propagation analysis on the initial random phase and the incident complex amplitude using a diffraction function to obtain the target surface complex amplitude, and iteratively optimizing the initial random phase based on the target surface complex amplitude to obtain the target dot matrix phase; generating a phase setting command based on the target dot matrix phase and sending it to the superlens to obtain the target dot matrix projection obtained by beam phase adjustment using the superlens. This method utilizes the complex amplitude of the laser array incident on the superlens combined with a gradient descent algorithm for iterative optimization to obtain the target dot matrix phase; it effectively eliminates the influence of the light source arrangement on the dot matrix intensity caused by the different incident angles of the laser array's light sources when introducing collimation phase, thus improving the quality of the generated dot matrix projection. Attached Figure Description

[0009] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the following description of the embodiments will be briefly introduced. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0010] Figure 1 A flowchart illustrating the method for generating dot projections based on a vertical cavity surface-emitting laser array, as provided in an embodiment of the present invention. Figure 2 A schematic diagram illustrating an application scenario of the dot projection generation method based on a vertical cavity surface-emitting laser array provided in this embodiment of the invention; Figure 3 A schematic diagram illustrating the application effect of the dot matrix projection generation method based on a vertical cavity surface-emitting laser array provided in an embodiment of the present invention; Figure 4 This is a schematic diagram illustrating another application effect of the dot matrix projection generation method based on a vertical cavity surface-emitting laser array provided in an embodiment of the present invention. Figure 5 This is a schematic diagram illustrating another application effect of the dot matrix projection generation method based on a vertical cavity surface-emitting laser array provided in this embodiment of the invention. Figure 6 A schematic diagram illustrating another application effect of the dot projection generation method based on a vertical cavity surface-emitting laser array provided in an embodiment of the present invention; Figure 7 This is a diagram showing the arrangement of lasers in a vertical cavity surface-emitting laser array provided in an embodiment of the present invention. Figure 8A schematic block diagram of a control terminal provided in an embodiment of the present invention; Figure 9 This is a schematic block diagram of a computer device provided in an embodiment of the present invention. Detailed Implementation

[0011] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0012] It should be understood that, when used in this specification and the appended claims, the terms "comprising" and "including" indicate the presence of the described features, integrals, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or collections thereof.

[0013] It should also be understood that the terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the invention. As used in this specification and the appended claims, the singular forms “a,” “an,” and “the” are intended to include the plural forms unless the context clearly indicates otherwise.

[0014] It should also be further understood that the term "and / or" as used in this specification and the appended claims refers to any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.

[0015] Please see Figure 1 As shown in the figure, an embodiment of this invention provides a method for generating a dot matrix projection based on a vertical-cavity surface-emitting laser array. This method is applied in a control terminal 10 and is executed by application software installed in the control terminal 10. Figure 2As shown, the control terminal 10 establishes communication connections with the vertical-cavity surface-emitting laser array 20 and the superlens 30 to transmit data information. The superlens 30 is disposed on the light output path of the vertical-cavity surface-emitting laser array 20, which is composed of multiple vertical-cavity surface-emitting lasers arranged in an array. The vertical-cavity surface-emitting laser array (VCSEL) 20 is also an array light source with adjustable power; the array light source is used to provide vertical-cavity surface-emitting laser with adjustable power, and the emission wavelength of the array light source can be selected according to the application scenario. The laser generated by the array light source illuminates the superlens 30, which is a lens with a metasurface structure. The metasurface structure is composed of microstructures arranged in a matrix, and these microstructures can be symmetrical structures such as cylinders, square prisms, or cross prisms. The superlens 30 modulates the phase of the beam from the array light source, converting the beam into a preset dot matrix projection of arbitrary intensity. The phase modulation range of the transmitted beam by the microstructure is typically within 0 to 2π, and the specific phase modulation angle is determined by the size of the microstructure. The control terminal 10 can be a terminal device with data processing capabilities, such as a laptop, desktop computer, tablet computer, or mobile phone. Figure 1 As shown, the method includes steps S110 to S160.

[0016] S110. Read the array parameters of the vertical cavity surface-emitting laser array, calculate the array parameters according to the preset complex amplitude calculation function, and obtain the complex amplitude of each laser as the incident complex amplitude.

[0017] The array parameters of the vertical cavity surface-emitting laser array are read through the control terminal. These parameters include the light source wavelength, light source size, number of light sources, half-divergence angle of a single light source, spacing distance, initial phase, and initial amplitude. The spacing distance is the distance between the superlens and the laser array. The array parameters can be calculated using the complex amplitude calculation function to obtain the complex amplitude of each laser on the superlens plane, which is then used as the corresponding incident complex amplitude. The complex amplitude calculation function can be expressed by formula (1): (1); The total incident complex amplitude can be obtained by coherent superposition using the complex amplitude calculation function. ,in, A i ( x,y ) is the complex amplitude function, which describes the different positions of the complex amplitude function on the superlens plane. x,y Amplitude distribution on ); such as Figure 3 and Figure 4 As shown, Figure 3 This corresponds to the superimposed complex amplitude intensity distribution of the light source in a specific embodiment. Figure 4 The corresponding identifier is the complex amplitude phase distribution of the light source superposition in this embodiment. exp [ iφ i ( x,y Let f be the phase function, representing the phase information of the complex amplitude function at different positions. i It is the imaginary unit. φ i ( x,y The ) represents the phase angle, which is the value of the phase function. It determines the phase shift of the complex amplitude function at different positions. (Subscript) i This indicates the sequence number of the laser in the vertical-cavity surface-emitting laser array. This represents the light field distribution of a single laser on the superlens plane. The phase angle of the complex amplitude function of a single laser is obtained from the formula for spherical waves emitted by the light source, which is expressed as formula (2): (2); in, φ 0 The initial phase of a single laser (determined by the laser's excitation conditions, and does not affect the spatial distribution of the phase), x 0 ,y 0 ) represents the initial coordinates of a single laser (wave source) on the plane containing the array of light sources. x,y () represents the target position on the superlens plane. D π is the interval distance in the array parameters, π is the value in radians, 2π in radians corresponds to an angle of 360°, and λ is the wavelength of the light source in the array parameters.

[0018] In the process of obtaining the amplitude, a single laser can be regarded as a Gaussian-like source, and the amplitude distribution on the surface of the superlens can be obtained according to the propagation formula. Specifically, it can be expressed by formula (3): (3); A ( x,y This indicates that the beam emitted by a single laser is at the target location ( x,y The amplitude at point () A 0 The initial amplitude at a single laser (wave source) decreases as the propagation distance increases. D This refers to the interval distance in the array parameters.

[0019] S120. Determine the target intensity matrix information corresponding to the array parameters according to the preset setting rules.

[0020] Furthermore, the target intensity lattice information corresponding to the array parameters is determined according to the set rules. The target intensity lattice information is also the intensity information corresponding to the required lattice projection.

[0021] In a specific embodiment, step S120 includes the following sub-steps: determining the corresponding target surface according to the array parameters; and setting the grayscale value of each point on the target surface according to the setting rules, as the target intensity dot matrix information.

[0022] Specifically, the target surface can be determined based on the array parameters. For example, the plane to which the projection array is to be formed can be determined as the target surface based on the projection distance in the array parameters; the projection distance is also the distance between the superlens and the projection formation position. Further, according to the set rules, the gray values ​​of each point on the target surface are set, and the gray values ​​of multiple points are combined to form the target intensity array information.

[0023] In a specific embodiment, the target surface is divided into squares according to the set number of dots in the set rules to form corresponding rectangular squares; the gray value of each grid point in the rectangular squares is set according to the gray value parameter in the set rules to obtain the target intensity dot matrix information.

[0024] If the setting rules include the number of dots, then the target surface will be divided into squares according to the number of dots. For example, if the number of dots is 13×13, then a 13×13 rectangular grid can be obtained on the target surface. Each row of the rectangular grid contains 13 squares, and each column also contains 13 squares.

[0025] Further, based on the grayscale parameters in the set rules, the grayscale values ​​of the grid points contained in the rectangular grid are set. These grayscale parameters include grayscale values ​​for white areas and grayscale values ​​for gray areas. Therefore, according to these grayscale parameters, the pixel value of a grid point in the central area of ​​the rectangular grid can be set to the grayscale value of the white area, the pixel values ​​of the grid points surrounding the central grid point can be set to the grayscale value of the gray area, the pixel values ​​of the grid points surrounding the gray area can be set to the grayscale value of the white area, and so on; that is, white and gray squares in the rectangular grid are arranged in concentric circles, ultimately completing the setting of the pixel value of each grid point and obtaining the target intensity dot matrix information. The obtained target intensity dot matrix information is as follows: Figure 5 As shown.

[0026] S130. Send an initial setting command to the superlens to set the superlens to an initial random phase.

[0027] The initial setting command is then sent to the superlens to set the phase of the superlens. The superlens can be set to an initial random phase by the initial setting command, in which the phase of each microstructure of the superlens is random.

[0028] S140. Perform diffraction propagation analysis on the initial random phase and the incident complex amplitude according to the preset diffraction function to obtain the corresponding target surface complex amplitude.

[0029] Furthermore, the initial random phase and incident complex amplitude are analyzed by diffraction propagation based on the diffraction function. The corresponding target surface complex amplitude is obtained through analysis, which is also the complex amplitude corresponding to the target surface mentioned above.

[0030] In a specific embodiment, step S140 includes the following sub-steps: multiplying the initial random phase with the incident complex amplitude to obtain the corresponding phase product information; and performing diffraction propagation analysis on the product information according to the diffraction function to obtain the corresponding target surface complex amplitude.

[0031] Specifically, the initial random phase can be multiplied by the incident complex amplitude to obtain the corresponding phase product information; further, the phase product information is analyzed by diffraction propagation based on the diffraction function, that is, the complex amplitude distribution of the complex amplitude propagating to the target surface is solved using the diffraction function based on the incident complex amplitude, which is used as the complex amplitude of the target surface. The diffraction function can be constructed based on Fresnel diffraction, and it can be expressed by formula (4): (4); in, f () represents Fresnel diffraction operation. φ 0 ( x,y ) represents the initial random phase. Let be the incident complex amplitude, which has the expression corresponding to the above equation (1).

[0032] S150. The initial random phase is iteratively optimized based on the diffraction function, the complex amplitude of the target surface, and the target intensity lattice information to obtain the target lattice phase corresponding to the preset iterative optimization parameters.

[0033] Furthermore, the initial random phase is iteratively optimized based on the diffraction function, the complex amplitude of the target surface, and the information of the target intensity lattice. The iterative optimization process is carried out according to the iterative optimization parameters. After multiple iterative optimizations of the initial random phase based on the iterative optimization parameters, the target lattice phase can be obtained.

[0034] In a specific embodiment, step S150 includes the following sub-steps: replacing the amplitude intensity of the complex amplitude of the target surface according to the target intensity lattice information to obtain corresponding complex amplitude replacement information; performing backpropagation analysis on the complex amplitude replacement information and the initial random phase according to the diffraction function to obtain an initial phase corresponding to the initial random phase; and iteratively optimizing the initial phase according to the diffraction function, the iterative optimization parameters, and the target intensity lattice information to obtain the corresponding target lattice phase.

[0035] Specifically, the amplitude intensity of the complex amplitude of the target surface is replaced based on the target intensity lattice information; that is, the amplitude at the target location is replaced in the complex amplitude of the target surface. x,y The amplitude intensity at () is replaced with the amplitude intensity at the target location () x,y The amplitude intensity in the target intensity lattice information remains unchanged, while other information in the target surface complex amplitude remains unchanged. After the above amplitude intensity replacement, the complex amplitude replacement information corresponding to the target intensity lattice information can be obtained.

[0036] Further, the complex amplitude replacement information and the initial random phase are analyzed by backpropagation based on the diffraction function. This analytical process is also expressed by formula (5): (5); φ 1 ( x,y () represents the initial phase obtained analytically through backpropagation. This indicates the replacement information for the complex amplitude; the incident complex amplitude here is the same as the diffraction propagation analysis described above. f -1 This represents the inverse function of the Fresnel diffraction operation.

[0037] After obtaining the initial phase, iterative optimization is performed on the initial phase based on the diffraction function, iterative optimization parameters, and target intensity lattice information. The iterative optimization parameters are used to set the iteration termination condition and iterative training parameters. Through multiple iterative optimizations of the initial phase, the target lattice phase is finally obtained. φ n ( x,y ).

[0038] In a specific embodiment, the step of iteratively optimizing the initial phase according to the diffraction function, the iterative optimization parameters, and the target intensity lattice information to obtain the corresponding target lattice phase includes: performing diffraction propagation analysis on the initial phase and the incident complex amplitude according to the diffraction function to obtain the corresponding iterative complex amplitude; calculating the actual intensity in the iterative complex amplitude and the target intensity lattice information according to the loss calculation formula in the iterative optimization parameters to obtain the corresponding loss value; adjusting the initial phase according to the loss value and the learning rate in the iterative optimization parameters to obtain the corresponding adjusted phase; determining whether the judgment condition in the iterative optimization parameters is met; if the judgment condition is met, terminating the above iterative training process and outputting the adjusted phase as the corresponding target lattice phase; if the judgment condition is not met, using the adjusted phase as the initial phase and returning to the step of performing diffraction propagation analysis on the initial phase and the incident complex amplitude according to the diffraction function to obtain the corresponding iterative complex amplitude.

[0039] The specific process of iterative optimization includes: performing diffraction propagation analysis on the initial phase and incident complex amplitude using a diffraction function to obtain the corresponding iterative complex amplitude; and obtaining the iterative complex amplitude at the target position. x,y The amplitude intensity at the corresponding location is taken as the actual intensity, and the target intensity lattice information at the target location ( x,y The amplitude intensity at point () is taken as the design intensity. The difference between the actual intensity and the design intensity at each location is calculated according to the loss calculation formula to obtain the corresponding loss value. The specific calculation can be expressed using formula (6): (6); Where p and q are the total number of x-coordinates and y-coordinates in the target surface, respectively. M is the total number of coordinate points, so M = q × p; As(x,y) For the iterative complex amplitude in the target plane and ( x,y The actual strength corresponding to the position. Am(x,y) For the target intensity lattice information in the target surface and ( x,y The design strength corresponding to the location is S, where S is the calculated loss value.

[0040] If a learning rate is set in the iterative optimization parameters, the initial phase can be adjusted according to the loss value and the learning rate. For example, if the learning rate is set to 0.01, the Adam optimizer can be used to perform gradient descent operation based on the gradient descent algorithm and the learning rate, so as to adjust the initial phase and obtain the adjusted phase after one optimization.

[0041] The process further determines whether the conditions in the iterative optimization parameters are met. If the conditions are met, the iterative optimization process is terminated, and the currently obtained adjusted phase is output as the corresponding target lattice phase. If the conditions are not met, the adjusted phase is used as the initial phase, and the iterative optimization process is executed again.

[0042] In a specific embodiment, determining whether the judgment condition in the iterative optimization parameters is met includes: determining whether the cumulative number of optimizations is greater than the number of judgments set in the judgment condition; if the cumulative number of optimizations is greater than the number of judgments, determining that the judgment condition is met; if the cumulative number of optimizations is not greater than the number of judgments, determining that the judgment condition is not met.

[0043] Specifically, it can be determined whether the cumulative number of optimizations is greater than the number of judgments set in the judgment conditions. If the cumulative number of optimizations is greater than this number, it indicates that the iterative optimization process has been completed, and the judgment conditions in the iterative optimization parameters are met. If the cumulative number of optimizations does not meet this number, it indicates that the iterative optimization has not been completed, and the judgment conditions in the iterative optimization parameters are not met. For example, the number of judgments can be set to 3000.

[0044] S160. Generate a corresponding phase setting command based on the target dot matrix phase and send it to the superlens, so that the superlens can adjust the beam phase to obtain a target dot matrix projection corresponding to the setting rule.

[0045] Based on the obtained target dot matrix phase, a corresponding phase setting command is sent to the superlens. The superlens then adjusts the phase angle of each microstructure based on the phase setting command. By controlling the phase angle change of the microstructure, the phase of the beam incident on the superlens can be adjusted, and finally, a target dot matrix projection corresponding to the set rule is obtained. This target dot matrix projection can meet the actual use requirements.

[0046] Based on the final target lattice phase, the corresponding verification results can be obtained by calculating and verifying using Fresnel diffraction or Rayleigh-Sommerfeld diffraction. Figure 6 The verification results obtained by using Rayleigh-Sommerfeld diffraction calculations are compared with... Figure 5 The design goals are perfectly aligned.

[0047] The dot matrix projection generation method based on a vertical-cavity surface-emitting laser array disclosed in the above embodiments includes: calculating the incident complex amplitude from the read array parameters according to a complex amplitude calculation function; determining the target intensity dot matrix information corresponding to the array parameters according to a set rule; sending an initial setting command to a superlens to set an initial random phase; performing diffraction propagation analysis on the initial random phase and the incident complex amplitude according to a diffraction function to obtain the target surface complex amplitude, and iteratively optimizing the initial random phase based on the target surface complex amplitude to obtain the target dot matrix phase; generating a phase setting command based on the target dot matrix phase and sending it to the superlens to obtain the target dot matrix projection obtained by beam phase adjustment by the superlens. This method utilizes the complex amplitude of the laser array incident on the superlens combined with a gradient descent algorithm for iterative optimization to obtain the target dot matrix phase; it effectively eliminates the influence of the light source arrangement on the dot matrix intensity caused by the different incident angles of the laser array's light sources when introducing collimation phase, thus improving the quality of the generated dot matrix projection.

[0048] This invention also provides a dot matrix projection generation device based on a vertical-cavity surface-emitting laser (VCSEL) array. The device includes a control terminal 10, a VCSEL array 20, and a superlens 30. The control terminal 10 is used to execute any embodiment of the aforementioned dot matrix projection generation method based on a VCSEL array. Specifically, please refer to... Figure 2 , Figure 2 This is a schematic diagram illustrating an application scenario of the dot projection generation method based on a vertical cavity surface-emitting laser array provided in an embodiment of the present invention.

[0049] Vertical cavity surface-emitting laser arrays (VCSELs) serve as array light sources, primarily generating VCSEL array light. The laser array light enters the metasurface and produces a corresponding dot projection on a target plane that exists at a certain distance from the metasurface.

[0050] In a more specific embodiment, the vertical-cavity surface-emitting lasers (VCSELs) in the VCSEL array are arranged in a pseudo-random manner, and the arrangement structure of the VCSELs is as follows: Figure 7 As shown. The vertical-cavity surface-emitting lasers in the vertical-cavity surface-emitting laser array are arranged in a preset manner, such as in a rectangular array or a hexagonal array. The emission wavelength of the vertical-cavity surface-emitting lasers can be selected according to the application scenario, such as setting the emission wavelength to 940nm in the near-infrared band.

[0051] The material of the microstructure in the superlens is selected based on the emission wavelength of the vertical-cavity surface-emitting laser (VCSEL), choosing a material transparent to that wavelength. For example, silicon nitride or titanium dioxide can be chosen for the visible light band; amorphous silicon or polycrystalline silicon can be chosen for the near-infrared band; and gallium nitride or chalcogenide compounds can be chosen for the mid-infrared band. The microstructure of the superlens can be a symmetrical structure such as a cylinder, square prism, or cross prism to achieve polarization decoherence. Furthermore, the spaces between the microstructures of the superlens can be protected by filling with a material with a lower refractive index than the microstructures. The effective size of the superlens can be set to 1.72 mm × 2.10 mm, and the distance between the superlens and the VCSEL array can be 3 mm.

[0052] like Figure 8 As shown, the control terminal 10 is specifically configured with the following units: an incident complex amplitude acquisition unit 110, used to read the array parameters of the vertical cavity surface-emitting laser array, calculate the array parameters according to a preset complex amplitude calculation function, and obtain the complex amplitude of each laser as the incident complex amplitude; a setting unit 120, used to determine the target intensity lattice information corresponding to the array parameters according to a preset setting rule; an initial setting command sending unit 130, used to send an initial setting command to the superlens to set the superlens as an initial random phase; and a target surface complex amplitude acquisition unit 140, used to obtain the target surface complex amplitude according to a preset setting rule. The diffraction function is set to perform diffraction propagation analysis on the initial random phase and the incident complex amplitude to obtain the corresponding target surface complex amplitude; the iterative optimization unit 150 is used to iteratively optimize the initial random phase according to the diffraction function, the target surface complex amplitude and the target intensity lattice information to obtain the target lattice phase corresponding to the preset iterative optimization parameters; the phase setting command sending unit 160 is used to generate a corresponding phase setting command according to the target lattice phase and send it to the superlens so that the superlens can adjust the beam phase to obtain the target lattice projection corresponding to the setting rule.

[0053] The dot matrix projection generation device based on a vertical-cavity surface-emitting laser array provided in this embodiment of the invention applies the aforementioned dot matrix projection generation method based on a vertical-cavity surface-emitting laser array. It calculates the incident complex amplitude based on the read array parameters using a complex amplitude calculation function; determines the target intensity dot matrix information corresponding to the array parameters according to set rules; sends an initial setting command to a superlens to set an initial random phase; performs diffraction propagation analysis on the initial random phase and the incident complex amplitude using a diffraction function to obtain the target surface complex amplitude; iteratively optimizes the initial random phase based on the target surface complex amplitude to obtain the target dot matrix phase; generates a phase setting command based on the target dot matrix phase and sends it to the superlens to obtain the target dot matrix projection obtained by beam phase adjustment using the superlens. This method utilizes the complex amplitude of the laser array incident on the superlens combined with a gradient descent algorithm for iterative optimization to obtain the target dot matrix phase; it effectively eliminates the influence of the light source arrangement on the dot matrix intensity caused by the different incident angles of the laser array's light sources when introducing collimation phase, thus improving the quality of the generated dot matrix projection.

[0054] Compared with existing technologies, the advantages of this invention are as follows: This invention provides a method and apparatus for generating dot matrix projections based on a vertical cavity surface-emitting laser (VCSEL) array. This invention uses a monolithic superlens to replace the traditional combination of a collimating lens and a DOE to achieve dot matrix projection of the VCSEL array light source, simplifying the system structure and improving integration. Simultaneously, the phase design of the superlens is no longer a superposition of the collimating lens and DOE phases, but directly utilizes the complex amplitude of the VCSEL array incident on the superlens. An optimized phase is obtained using the GS algorithm combined with a gradient descent algorithm, effectively eliminating the inherent variation in dot matrix intensity related to the light source arrangement caused by the different incident angles of the various light sources in the VCSEL array when introducing a collimating phase. Furthermore, the intensity of any point in the dot matrix can be arbitrarily controlled according to the algorithm adjustment, overcoming the main shortcomings of existing technologies.

[0055] The above-described method for generating dot projections based on vertical-cavity surface-emitting laser arrays can be implemented as a computer program, which can be used in applications such as... Figure 9 It runs on the computer device shown.

[0056] Please see Figure 9 , Figure 9 This is a schematic block diagram of a computer device provided in an embodiment of the present invention. The computer device can be a control terminal for executing a dot matrix projection generation method based on a vertical-cavity surface-emitting laser array to control a superlens and generate a dot matrix projection.

[0057] See Figure 9 The computer device 500 includes a processor 502, a memory, and a communication interface 505 connected via a communication bus 501. The memory may include a storage medium 503 and internal memory 504.

[0058] The storage medium 503 may store an operating system 5031 and a computer program 5032. When the computer program 5032 is executed, it enables the processor 502 to execute a dot projection generation method based on a vertical cavity surface-emitting laser array. The storage medium 503 may be a volatile storage medium or a non-volatile storage medium.

[0059] The processor 502 provides computing and control capabilities to support the operation of the entire computer device 500.

[0060] The internal memory 504 provides an environment for the operation of the computer program 5032 in the storage medium 503. When the computer program 5032 is executed by the processor 502, the processor 502 can execute a dot projection generation method based on a vertical cavity surface-emitting laser array.

[0061] This communication interface 505 is used for network communication, such as providing data transmission. Those skilled in the art will understand that... Figure 9 The structure shown is merely a block diagram of a portion of the structure related to the present invention and does not constitute a limitation on the computer device 500 to which the present invention is applied. The specific computer device 500 may include more or fewer components than shown in the figure, or combine certain components, or have different component arrangements.

[0062] The processor 502 is used to run the computer program 5032 stored in the memory to implement the corresponding functions in the above-described dot projection generation method based on a vertical cavity surface-emitting laser array.

[0063] Those skilled in the art will understand that Figure 9 The embodiments of the computer device shown do not constitute a limitation on the specific configuration of the computer device. In other embodiments, the computer device may include more or fewer components than illustrated, or combine certain components, or have different component arrangements. For example, in some embodiments, the computer device may include only memory and a processor. In such embodiments, the structure and function of the memory and processor are different from those shown. Figure 9 The embodiments shown are consistent and will not be repeated here.

[0064] It should be understood that, in this embodiment of the invention, the processor 502 may be a Central Processing Unit (CPU), or it may be other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. The general-purpose processor may be a microprocessor or any conventional processor.

[0065] In another embodiment of the invention, a computer-readable storage medium is provided. This computer-readable storage medium may be volatile or non-volatile. The computer-readable storage medium stores a computer program, wherein when executed by a processor, the computer program implements the steps included in the above-described method for generating a dot matrix projection based on a vertical-cavity surface-emitting laser array.

[0066] Those skilled in the art will readily understand that, for the sake of convenience and brevity, the specific working processes of the devices, apparatuses, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here. Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of both. To clearly illustrate the interchangeability of hardware and software, the composition and steps of each example have been generally described in terms of function in the foregoing description. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this invention.

[0067] In the embodiments provided by this invention, it should be understood that the disclosed devices, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative. For instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. Units with the same function may be grouped into one unit. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. In addition, the coupling or direct coupling or communication connection shown or discussed may be an indirect coupling or communication connection through some interfaces, devices, or units, or it may be an electrical, mechanical, or other form of connection.

[0068] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of the embodiments of the present invention, depending on actual needs.

[0069] Furthermore, the functional units in the various embodiments of the present invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0070] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a computer-readable storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of the present invention. The aforementioned computer-readable storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), magnetic disks, or optical disks.

[0071] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and these modifications or substitutions should all be covered within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A method for generating a dot matrix projection based on a vertical-cavity surface-emitting laser array, characterized in that, The method is applied in a control terminal, which establishes communication connections with a vertical-cavity surface-emitting laser array and a superlens to transmit data information. The superlens is positioned on the light output path of the vertical-cavity surface-emitting laser array, which is composed of multiple vertical-cavity surface-emitting lasers arranged in a row. The method includes: The array parameters of the vertical cavity surface-emitting laser array are read, and the array parameters are calculated according to the preset complex amplitude calculation function to obtain the complex amplitude of each laser as the incident complex amplitude; The target intensity dot matrix information corresponding to the array parameters is determined according to the preset setting rules; Send an initial setting command to the superlens to set the superlens to an initial random phase; The initial random phase and the incident complex amplitude are analyzed by diffraction propagation according to the preset diffraction function to obtain the corresponding target surface complex amplitude; The initial random phase is iteratively optimized based on the diffraction function, the complex amplitude of the target surface, and the target intensity lattice information to obtain the target lattice phase corresponding to the preset iterative optimization parameters; A corresponding phase setting command is generated based on the target dot matrix phase and sent to the superlens, so that the superlens can adjust the beam phase to obtain a target dot matrix projection corresponding to the setting rule.

2. The dot matrix projection generation method based on a vertical-cavity surface-emitting laser array according to claim 1, characterized in that, The step of determining the target intensity lattice information corresponding to the array parameters according to preset rules includes: The corresponding target surface is determined based on the array parameters; According to the set rules, the grayscale values ​​of each point on the target surface are set as the target intensity dot matrix information.

3. The dot matrix projection generation method based on a vertical-cavity surface-emitting laser array according to claim 2, characterized in that, The step of setting grayscale values ​​for each point on the target surface according to the set rules, as the target intensity dot matrix information, includes: According to the set number of dots in the set rules, the target surface is divided into squares to form corresponding rectangular squares; The grayscale values ​​of each grid point in the rectangular grid are set according to the grayscale parameters in the set rules to obtain the target intensity dot matrix information.

4. The method for generating a dot matrix projection based on a vertical-cavity surface-emitting laser array according to any one of claims 1-3, characterized in that, The step of performing diffraction propagation analysis on the initial random phase and the incident complex amplitude according to a preset diffraction function to obtain the corresponding target surface complex amplitude includes: Multiply the initial random phase by the incident complex amplitude to obtain the corresponding phase product information; The product information is analyzed by diffraction propagation based on the diffraction function to obtain the corresponding complex amplitude of the target surface.

5. The method for generating a dot matrix projection based on a vertical-cavity surface-emitting laser array according to claim 1, characterized in that, The step of iteratively optimizing the initial random phase based on the diffraction function, the complex amplitude of the target surface, and the target intensity lattice information to obtain the target lattice phase corresponding to the preset iterative optimization parameters includes: Based on the target intensity lattice information, the complex amplitude of the target surface is replaced with amplitude intensity to obtain the corresponding complex amplitude replacement information; Based on the diffraction function, the complex amplitude replacement information and the initial random phase are backpropagated and analyzed to obtain the initial phase corresponding to the initial random phase; The initial phase is iteratively optimized based on the diffraction function, the iterative optimization parameters, and the target intensity lattice information to obtain the corresponding target lattice phase.

6. The dot matrix projection generation method based on a vertical-cavity surface-emitting laser array according to claim 5, characterized in that, The step of iteratively optimizing the initial phase based on the diffraction function, the iterative optimization parameters, and the target intensity lattice information to obtain the corresponding target lattice phase includes: Based on the diffraction function, the initial phase and the incident complex amplitude are analyzed by diffraction propagation to obtain the corresponding iterative complex amplitude; The actual intensity in the iterative complex amplitude and the target intensity lattice information are calculated based on the loss calculation formula in the iterative optimization parameters to obtain the corresponding loss value; The initial phase is adjusted based on the loss value and the learning rate in the iterative optimization parameters to obtain the corresponding adjusted phase. Determine whether the judgment conditions in the iterative optimization parameters are met; If the judgment condition is met, the above iterative training process is terminated and the adjusted phase is output as the corresponding target dot matrix phase; If the judgment condition is not met, the adjusted phase is taken as the initial phase and the process returns to the step of performing diffraction propagation analysis on the initial phase and the incident complex amplitude according to the diffraction function to obtain the corresponding iterative complex amplitude.

7. The dot matrix projection generation method based on a vertical-cavity surface-emitting laser array according to claim 6, characterized in that, The determination of whether the judgment condition in the iterative optimization parameters is met includes: Determine whether the cumulative number of optimizations is greater than the number of judgments set in the judgment condition; If the cumulative number of optimizations is greater than the number of judgments, the judgment condition is determined to be met. If the cumulative number of optimizations is not greater than the number of judgments, the judgment condition is not met.

8. A dot matrix projection generation device based on a vertical-cavity surface-emitting laser array, characterized in that, The device includes a control terminal, a vertical-cavity surface-emitting laser array, and a superlens. The control terminal establishes communication connections with the vertical-cavity surface-emitting laser array and the superlens to realize the transmission of data information. The superlens is disposed on the light output path of the vertical-cavity surface-emitting laser array. The vertical-cavity surface-emitting laser array is composed of multiple vertical-cavity surface-emitting lasers arranged in a row. The control terminal is used to execute the dot matrix projection generation method based on a vertical cavity surface-emitting laser array as described in any one of claims 1-7.

9. The dot matrix projection generation device based on a vertical-cavity surface-emitting laser array according to claim 8, characterized in that, The device also includes a unit configured in the control terminal: The incident complex amplitude acquisition unit is used to read the array parameters of the vertical cavity surface-emitting laser array, calculate the array parameters according to the preset complex amplitude calculation function, and obtain the complex amplitude of each laser as the incident complex amplitude. A setting unit is used to determine the target intensity dot matrix information corresponding to the array parameters according to preset setting rules; An initial setting command sending unit is used to send an initial setting command to the superlens to set the superlens to an initial random phase; The target surface complex amplitude acquisition unit is used to perform diffraction propagation analysis on the initial random phase and the incident complex amplitude according to the preset diffraction function to obtain the corresponding target surface complex amplitude; An iterative optimization unit is used to iteratively optimize the initial random phase based on the diffraction function, the complex amplitude of the target surface, and the target intensity lattice information to obtain the target lattice phase corresponding to the preset iterative optimization parameters; A phase setting command sending unit is used to generate a corresponding phase setting command based on the target dot matrix phase and send it to the superlens, so that the superlens can adjust the beam phase to obtain a target dot matrix projection corresponding to the setting rule.

10. The dot matrix projection generation device based on a vertical-cavity surface-emitting laser array according to claim 8 or 9, characterized in that, The vertical cavity surface-emitting laser array contains vertical cavity surface-emitting lasers arranged in a pseudo-random manner.

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