Light emitting element and electronic device including the same

Abstract

A light emitting element and an electronic device including the same are provided. The light emitting element includes a first electrode, a hole injection layer on the first electrode, a first emission layer on the hole injection layer and emitting light of a first wavelength, a first n-type charge generation layer on the first emission layer, a first p-type charge generation layer on the first n-type charge generation layer, and a second p-type charge generation layer on the second p-type charge generation layer. And a second emission layer on the first p-type charge generation layer and emitting light of a second wavelength different from the first wavelength. The electron transport region is on the second emission layer.

Description

[0001] This application claims priority and benefit to Korean Patent Application No. 10-2024-0067828, filed on May 24, 2024, with the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0002] One or more aspects of embodiments of this disclosure relate to a light-emitting element and a display panel and electronic device including the light-emitting element. For example, this disclosure relates to a light-emitting element designed to enhance display efficiency and extend service life, and a display panel including the light-emitting element. Background Technology

[0003] Display devices that provide images to users (such as televisions, monitors, smartphones, and / or tablets) include display panels for image presentation. Various display panels, including liquid crystal display panels, organic light-emitting display panels, electrowetting display panels, and electrophoretic display panels, are under development.

[0004] To improve the reliability of display panels, methods for patterning light-emitting elements have been investigated. Recently, research has focused on high-resolution display devices that utilize light-emitting materials typically applied using aperture masks. Summary of the Invention

[0005] One or more aspects of embodiments of this disclosure relate to a light-emitting element having improved display efficiency and display lifespan while achieving high resolution, and an electronic device including the light-emitting element. However, the aspects of this disclosure are not limited to those set forth herein.

[0006] The foregoing and other aspects of this disclosure will become more apparent to those skilled in the art upon reference to the detailed description thereof.

[0007] One or more embodiments of this disclosure provide a light-emitting element comprising: a first electrode; a hole injection layer disposed on the first electrode; a first emission layer disposed on the hole injection layer and emitting (e.g., configured to emit) light of a first wavelength; a first n-type charge generation layer disposed on the first emission layer; a first p-type charge generation layer disposed on the first n-type charge generation layer; a second emission layer disposed on the first p-type charge generation layer and emitting (e.g., configured to emit) light of a second wavelength that may be different from the first wavelength; an electron transport region disposed on the second emission layer; a second electrode disposed on the electron transport region; and a hole transport auxiliary layer disposed adjacent to at least one of the hole injection layer and the first p-type charge generation layer, and comprising a first amine compound and a first fluorine-containing compound, wherein at least one layer selected from the hole injection layer and the first p-type charge generation layer (e.g., adjacent to the hole transport auxiliary layer) comprises a p-doper, a second amine compound, and a second fluorine-containing compound.

[0008] In one or more embodiments, in the hole transport assist layer, the weight ratio of the first amine compound to the first fluorinated compound (e.g., the weight ratio of the first amine compound to the first fluorinated compound) can be from about 3:7 to about 5:5, and in at least one layer selected from the hole injection layer and the first p-type (class) charge generation layer (e.g., including the second amine compound and the second fluorinated compound), the weight ratio of the second amine compound to the second fluorinated compound (e.g., the weight ratio of the second amine compound to the second fluorinated compound) can be from about 3:7 to about 5:5.

[0009] In one or more embodiments, the first fluorinated compound and the second fluorinated compound may each independently include at least one fluorinated polymer, such as at least one of TEFLON (e.g., a Teflon polymer or a PTFE (polytetrafluoroethylene) polymer) and CYTOP (e.g., a Cytop (cyclized transparent optical polymer) polymer).

[0010] In one or more embodiments, the water contact angle of each of the first fluorinated compound and the second fluorinated compound may be independently at least about 110° (e.g., about 110° or greater).

[0011] In one or more embodiments, the lowest unoccupied molecular orbital (LUMO) level of each of the first and second fluorinated compounds may independently be up to about 5.0 eV (e.g., about 5.0 eV or lower).

[0012] In one or more embodiments, the hole transport assist layer may include a plurality of first portions comprising a first amine compound and a plurality of second portions comprising a first fluorinated compound, and the plurality of first portions and the plurality of second portions may be arranged alternately in a direction orthogonal (e.g., perpendicular) to the thickness direction.

[0013] In one or more embodiments, the light-emitting element may further include a hole transport layer disposed on the hole injection layer, wherein a hole transport auxiliary layer may be disposed between the hole injection layer and the hole transport layer.

[0014] In one or more embodiments, the hole transport auxiliary layer may be arranged to be separated from and / or spaced apart (e.g., spaced apart or separated) from the first emitter layer by a first distance relative to a thickness direction (e.g., the thickness direction), and the first distance may be at least about 10 nanometers (nm) (e.g., about 10 nanometers (nm) or greater).

[0015] In one or more embodiments, the hole transport auxiliary layer can be directly disposed on the hole injection layer, and the hole transport layer can be directly disposed on the hole transport auxiliary layer.

[0016] In one or more embodiments, the hole transport auxiliary layer may be disposed between the first p-type (class) charge generation layer and the second emitter layer.

[0017] In one or more embodiments, the hole transport auxiliary layer may be arranged to be separated from and / or spaced apart (e.g., spaced apart or separated) from the second emitter layer by a second distance relative to the thickness direction, and the second distance may be at least about 10 nm (e.g., about 10 nm or more).

[0018] In one or more embodiments, the hole transport auxiliary layer may be directly disposed on the first p-type (like) charge generation layer.

[0019] In one or more embodiments, the light-emitting element may further include an intermediate hole transport layer disposed between the hole transport auxiliary layer and the second emitting layer and comprising a hole transport material.

[0020] In one or more embodiments, the light-emitting element may further include an intermediate electron transport layer disposed between the first emitting layer and the first n-type (class) charge generation layer.

[0021] In one or more embodiments, the light-emitting element may further include: a second n-type charge generation layer disposed on the second emitting layer; a second p-type charge generation layer disposed on the second n-type charge generation layer; and a third emitting layer disposed on the second p-type charge generation layer, and emitting (e.g., configured to emit) light of a third wavelength that may be different from the first and second wavelengths.

[0022] In one or more embodiments, the light-emitting element may further include a capping layer disposed on the second electrode, wherein the capping layer may have a refractive index of at least about 1.6 (e.g., about 1.6 or greater).

[0023] In one or more embodiments of this disclosure, the light-emitting element includes: a first electrode; a second electrode opposite to the first electrode (e.g., facing the first electrode); a plurality of light-emitting stacks stacked between the first electrode and the second electrode, and each of the plurality of light-emitting stacks (e.g., light-emitting stacks) includes an emitting layer and a plurality of functional layers; and a charge-generating layer disposed between adjacent stacks among the plurality of light-emitting stacks, wherein the charge-generating layer includes an n-type (class) charge-generating layer containing an n-doper and a p-type (class) charge-generating layer containing a p-doper, and at least one functional layer adjacent to the p-type (class) charge-generating layer may (e.g., all) include an amine compound and a fluorine-containing compound.

[0024] In one or more embodiments, at least one functional layer comprising an amine compound and a fluorinated compound may be arranged to be separated from and / or spaced apart from the emission layer relative to a thickness direction (e.g., the thickness direction), and the spacing between the at least one functional layer and the emission layer may be at least about 10 nm (e.g., about 10 nm or more).

[0025] In one or more embodiments of this disclosure, an electronic device includes: a substrate layer including a non-display area and a display area, the display area including a first light-emitting area, a second light-emitting area, and a non-light-emitting area; a display element layer disposed on the substrate layer and including a first light-emitting element superimposed on the first light-emitting area and a second light-emitting element superimposed on the second light-emitting area, wherein each of the first light-emitting element and the second light-emitting element includes: a first electrode; a hole injection layer disposed on the first electrode; a first emission layer disposed on the hole injection layer and emitting (e.g., configured to emit) light of a first wavelength; a first n-type (class) charge generation layer disposed on the first emission layer; and a first p-type (class) charge generation layer disposed on the first emission layer. The first p-type charge generation layer is disposed on an n-type charge generation layer and emits (e.g., configured to emit) light of a second wavelength that may be different from the first wavelength; an electron transport region is disposed on the second emitter layer; a second electrode is disposed on the electron transport region; and a hole transport auxiliary layer is disposed adjacent to at least one of the hole injection layer and the first p-type charge generation layer and comprises a first amine compound and a first fluorine compound, wherein at least one layer selected from the hole injection layer and the first p-type charge generation layer (e.g., adjacent to the hole transport auxiliary layer) comprises a p-doper, a second amine compound, and a second fluorine compound.

[0026] In one or more embodiments, the electronic device may further include: an encapsulation layer disposed on the display element layer; and a plurality of color filters disposed on the encapsulation layer and in each of the first and second light-emitting regions. Attached Figure Description

[0027] The accompanying drawings are included to provide a further understanding of the foregoing and other advantages of this disclosure, and are incorporated in and constitute a part of this specification. The drawings illustrate exemplary embodiments of this disclosure and, together with the description, serve to explain the principles of this disclosure. In the drawings:

[0028] Figure 1 This is a perspective view showing an electronic device according to one or more embodiments of the present disclosure;

[0029] Figure 2A This is a perspective view showing an electronic device according to one or more embodiments of the present disclosure;

[0030] Figure 2B This is an exploded perspective view of an electronic device according to one or more embodiments of the present disclosure;

[0031] Figure 3 This is a plan view of a display panel according to one or more embodiments of the present disclosure;

[0032] Figure 4 This is a cross-sectional view of a display panel according to one or more embodiments of the present disclosure;

[0033] Figures 5A to 5D These are cross-sectional views of light-emitting elements according to one or more embodiments of the present disclosure;

[0034] Figure 5E This is a cross-sectional view of a light-emitting stack according to one or more embodiments of the present disclosure;

[0035] Figure 6A This is a cross-sectional view of a hole transport auxiliary layer included in a light-emitting element of one or more embodiments of this disclosure;

[0036] Figure 6B and Figure 6C Each is a cross-sectional view illustrating some constructions of a light-emitting element according to one or more embodiments of the present disclosure;

[0037] Figure 7A and Figure 7B These are graphs showing the current density according to voltage in the light-emitting elements of example and comparative examples; and

[0038] Figure 7C This is a graph showing the change in brightness over time in the light-emitting elements of the example and comparative examples. Detailed Implementation

[0039] This disclosure will now be described, and it may be implemented in many different forms and should therefore not be construed as limited to the one or more embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of this disclosure to those skilled in the art.

[0040] Expressions such as “at least one of…”, “one of…”, “selected from…”, and “selected from…” modify the entire list of elements when they precede or follow a list of elements, without modifying any individual elements within that list. For example, throughout the disclosure, the expression “at least one of a, b, and c” indicates only a, only b, only c, both a and b (e.g., simultaneously), both a and c (e.g., simultaneously), both b and c (e.g., simultaneously), all of a, b, and c, or variations thereof.

[0041] In this specification, it will also be understood that if a component (or region, layer and / or part, etc.) is referred to as being "on" another component, "connected to" or "attached to" another component (e.g., when a component (or region, layer and / or part, etc.) is referred to as being "on" another component, "connected to" or "attached to" another component), it may be directly connected to / attached to said other component, or an intervening third component may be arranged between them.

[0042] The same reference numerals refer to the same components, and their repeated descriptions may be omitted. Furthermore, in the drawings, the thickness, proportions, and dimensions of components are exaggerated for the purpose of effectively describing the technical content. As used herein, the term "and / or" includes all combinations of one or more of the relevant constructions that can be defined.

[0043] It will be understood that although the terms “first” and / or “second” may be used herein to describe one or more suitable components, these components should not be limited by these terms. These terms are used only to distinguish one component from another. For example, without departing from the scope of this disclosure, a first component may be referred to as a second component, and similarly, a second component may be referred to as a first component. Unless the context clearly indicates otherwise, terms such as the singular forms of “a,” “an,” and “the” may include the plural forms.

[0044] Spatial relative terms such as “below,” “on the lower part of,” “above,” and “on the upper part of” are used to describe the relationships of the structures shown in the accompanying drawings. These terms are used as relative concepts and are described with reference to the directions indicated in the accompanying drawings.

[0045] It should be understood that the terms "comprising," "including," "having," and / or variations thereof are intended to indicate the presence of one or more (e.g., any suitable) combinations of the features, integrals, steps, operations, components, parts, and / or thereof stated in the specification, but do not preclude the presence or addition of one or more other features, integrals, steps, operations, components, parts, and / or one or more (e.g., any suitable) combinations thereof. Furthermore, the terms "comprising / variations thereof," "including / variations thereof," "having / variations thereof," or other similar terms include or support the terms "consisting of" and "substantially consisting of," which indicate the presence of the stated features, integrals, steps, operations, elements, and / or components, while other features, integrals, steps, operations, elements, components, and / or groups thereof are absent or substantially absent.

[0046] Here, "directly arranged on" means that there is no intervening layer, membrane, area, and / or plate between a component such as a layer, membrane, area, and plate and another component. For example, "directly arranged on" could mean arranged between two layers or two components without the use of additional components such as adhesive components.

[0047] It will be understood that, in addition to the orientations depicted in the accompanying drawings, the spatial relative terms are intended to cover different orientations of the device during use or operation. For example, if the device in the accompanying drawings is flipped, an element described as "below" or "under" other elements or features will subsequently be oriented "above" or "on" said other elements or features. Thus, the term "below" can cover both above and below orientations. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatial relative descriptive terms used herein should be interpreted accordingly.

[0048] Unless otherwise defined, all terms used herein (including chemical, technical, and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. In some embodiments, it will be understood that terms (such as those defined in common dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant field and will not be interpreted in an idealized or overly formalized sense, unless expressly defined herein.

[0049] The term “may” will be understood to refer to “one or more embodiments of this disclosure,” some of which include the described elements, and some of which exclude the elements and / or include alternative elements. Similarly, alternative language such as “or” refers to “one or more embodiments of this disclosure,” each of which includes the corresponding listed item.

[0050] In this context, “consisting essentially of” indicates that any additional components will not substantially affect the chemical, physical, optical, or electrical properties of the semiconductor film.

[0051] In the following description, an electronic device and a display panel included in one or more embodiments of the present disclosure will be described with reference to the accompanying drawings, in which one or more embodiments of the present disclosure are illustrated. The aspects and features of the disclosure, as well as methods of implementing them, will be apparent from the description of one or more embodiments with reference to the accompanying drawings. In this specification, phrases such as “in a plane” and / or “plan view” indicate a view of a target portion from above, and the phrase “in a cross-section” indicates a view of a cross-section formed by vertically cutting the target portion from the side.

[0052] Electronic devices

[0053] Figure 1 This is a perspective view illustrating an electronic device EE according to one or more embodiments of the present disclosure. The electronic device EE can be a device activated by an electrical signal. For example, the electronic device EE can be a television, monitor, billboard, game console, tablet PC, laptop computer, mobile phone, tablet computer, navigation device, smartphone, electric vehicle, mobile communication terminal, e-notebook, e-reader, portable multimedia player (PMP), Internet of Things (IoT) device, smartwatch, watch phone, and wearable device (such as head-mounted display (HMD)), but one or more embodiments of the present disclosure are not limited thereto.

[0054] Figure 1 A head-mounted display device is shown as an example of an electronic device EE. A head-mounted display device can be a device mounted on a user's head to provide a screen on which video or images are displayed to the user. Head-mounted display devices can include perspective-based devices that provide augmented reality (AR) based on real external objects and closed-view devices that provide virtual reality (VR) to the user on a screen independent of external perspectives.

[0055] Reference Figure 1 The electronic device EE may include a display panel DP and a lens portion LS facing the display panel DP. In some embodiments, the electronic device EE may include a main frame MF, a cover frame CF, and a fixing portion FP.

[0056] The main frame MF can be a part worn on the user's face. The main frame MF can have a shape corresponding to the shape of the user's head (face). For example, the length of the fixing part FP can be adjusted according to the circumference of the user's head. The fixing part FP is a structure that facilitates the installation of the main frame MF and may include straps and / or bands, etc. However, one or more embodiments of this disclosure are not limited thereto, and the fixing part FP can have one or more suitable shapes, such as helmet or eyeglass temples that are attached to the main frame MF.

[0057] The lens assembly LS, display panel DP, and cover frame CF can be mounted on the main frame MF. The main frame MF may include a space or structure that can accommodate the lens assembly LS and display panel DP.

[0058] The lens section LS can be arranged between the display panel DP and the user. The lens section LS can transmit light emitted from the display panel DP to provide light to the user. For example, the lens section LS can include one or more suitable types of lenses, such as multi-channel lenses, convex lenses, concave lenses, spherical lenses, aspherical lenses, single lenses, compound lenses, standard lenses, narrow-angle lenses, wide-angle lenses, fixed-focus lenses, and zoom lenses.

[0059] The lens section LS may include a first lens LS1 and a second lens LS2. The first lens LS1 and the second lens LS2 may be arranged to correspond to the positions of the user's left eye and right eye, respectively. The first lens LS1 and the second lens LS2 may be housed in the main frame MF.

[0060] The display panel (DP) can be set up either fixed to the main frame (MF) or detachable. The display panel (DP) will be described in more detail later.

[0061] The cover frame CF can be disposed on one surface of the display panel DP to protect the display panel DP. The cover frame CF and the lens portion LS can be separated from each other (e.g., spaced apart or separated), and the display panel DP is placed between the cover frame CF and the lens portion LS.

[0062] Figure 1 The following figures illustrate a first direction DR1 to a third direction DR3. The directions indicated by the first direction to the third direction DR1, DR2, and DR3 described herein are relative concepts and can be converted to other directions. In some embodiments, the directions indicated by the first direction to the third direction DR1, DR2, and DR3 can be described as a first direction to a third direction and can use the same reference numerals. In this specification, the first direction DR1 and the second direction DR2 are orthogonal to each other, and the third direction DR3 can be a normal direction relative to the plane defined by the first direction DR1 and the second direction DR2.

[0063] The electronic device EE may have a thickness direction parallel to a third direction DR3, which is a normal direction relative to the plane defined by the first direction DR1 and the second direction DR2. In this specification, the front (or top) and rear (or bottom) surfaces of the components of the electronic device EE may be defined based on the third direction DR3. In this specification, "in a plane" means a plane parallel to the plane defined by the first direction DR1 and the second direction DR2, and "in a cross-section" means a plane parallel to the third direction DR3.

[0064] In this context, and unless otherwise defined, a plan view refers to a view showing the layout of the apparatus from above, as if looking down at the apparatus along a third direction DR3. The plan view is parallel to the plane defined by the first direction DR1 and the second direction DR2. The plan view is a horizontal cut through the structure, typically just above the floor, and shows the arrangement of the components from a top-down perspective.

[0065] In this context, and unless otherwise defined, a sectional view refers to a vertical cut through a device that reveals internal features and details not visible from the outside. The sectional view is parallel to a third direction DR3, which is the direction of the normal relative to the plane defined by the first direction DR1 and the second direction DR2. A sectional view is like cutting open an object to see its internal components, such as walls, floors, and structural elements.

[0066] Figure 2A This is a perspective view showing an electronic device EE-a according to one or more embodiments of the present disclosure. Figure 2A This is a perspective view illustrating one or more embodiments of the electronic device EE-a disclosed herein, and a mobile phone is shown as an example of the electronic device EE-a. The electronic device EE-a can display an image IM through an effective area AA-DD. The effective area AA-DD may include a plane defined by a first direction DR1 and a second direction DR2. The effective area AA-DD may include a curved surface bent from at least one side of the plane defined by the first direction DR1 and the second direction DR2. However, this is an example, and the shape of the effective area AA-DD is not limited thereto. For example, the effective area AA-DD may consist only of a plane, and the effective area AA-DD may also include four curved surfaces bent from at least two or more sides (e.g., four sides) of the plane, respectively.

[0067] The peripheral region NAA-DD is adjacent to the effective region AA-DD. The peripheral region NAA-DD may surround (e.g., encircle) the effective region AA-DD. Therefore, the shape of the effective region AA-DD may be substantially defined by the peripheral region NAA-DD. However, this is shown by way of example, and the peripheral region NAA-DD may be arranged to be adjacent only to one side of the effective region AA-DD, or the peripheral region NAA-DD may not be provided. The effective region AA-DD may be arranged in one or more suitable shapes, and is not limited to any one or more embodiments.

[0068] Figure 2B yes Figure 2A An exploded perspective view of the electronic device EE-a shown. (Refer to...) Figure 2B Electronic device EE-a may include housing HAU, display panel DP, and window component WM.

[0069] The window member WM can cover the entire outer side of the display panel DP. The window member WM can include a transmissive area TA and a bezel area BZA. The front surface of the window member WM, including the transmissive area TA and the bezel area BZA, can correspond to the front surface of the electronic device EE-a. Figure 2A The effective area AA-DD of the electronic device EE-a shown is illustrated, and the border area BZA can correspond to... Figure 2A The peripheral region NAA-DD of the electronic device EE-a shown.

[0070] The transmissive region TA can be an optically transparent region. The border region BZA can have a relatively lower transmittance than the transmissive region TA. The border region BZA can have a certain color. The border region BZA can be adjacent to the transmissive region TA and can be around the transmissive region TA (e.g., surrounding the transmissive region TA). The border region BZA can define the shape of the transmissive region TA. However, one or more embodiments of this disclosure are not limited to the one illustrated embodiment; the border region BZA can be arranged to be adjacent only to one side of the transmissive region TA, and a portion of the transmissive region TA may not have the border region BZA.

[0071] In one or more embodiments, an input sensing unit may be disposed on the display panel DP. The input sensing unit can sense external input applied from the outside. External input may be user input. User input may include one or more suitable types (categories) of external input, such as a part of the user's body, light, heat, a pen, or pressure. For example, the input sensing unit may be arranged within the encapsulation layer TFE of the display panel DP, which will be described in more detail later (see [link to TFE]). Figure 4 On the TFE (Transformer Embedded Surface) layer. In one or more embodiments, the input sensing unit may be directly disposed on the TFE layer (see TFE). Figure 4 It can be placed on the TFE encapsulation layer (see) or directly on the TFE encapsulation layer. Figure 4 On the adhesive components. The adhesive components may include typical adhesives or pressure adhesives.

[0072] In this specification, if a component (or area, layer, and / or part, etc.) is referred to as being "directly arranged" on another component (e.g., when a component (or area, layer, and / or part, etc.) is referred to as being "directly arranged" on another component), it means that no third component is arranged between the two components. For example, "directly arranged" on another component means that the two components are in contact.

[0073] The housing HAU can accommodate the display panel DP, etc. The housing HAU can be integrated with the window component WM.

[0074] Figure 3 This is a plan view illustrating a display panel DP according to one or more embodiments. In the following description of the display panel DP, the same applies to displays including... Figure 1 and Figure 2A The electronic devices EE and EE-a shown in the diagram each contain a display panel DP.

[0075] Reference Figure 3The display panel (DP) may include a light-emitting area (PXA) and a non-light-emitting area (NPXA). The non-light-emitting area (NPXA) may surround the light-emitting area (PXA). Multiple light-emitting areas (PXA) may be provided. The light-emitting areas (PXA) may include a first light-emitting area (PXA-1), a second light-emitting area (PXA-2), and a third light-emitting area (PXA-3). The first light-emitting area (PXA-1), the second light-emitting area (PXA-2), and the third light-emitting area (PXA-3) may each emit light of different wavelengths. The first light-emitting area (PXA-1) may emit a first light, the second light-emitting area (PXA-2) may emit a second light different from the first light, and the third light-emitting area (PXA-3) may emit a third light different from the first and second light. In one or more embodiments, the first light may be red light, the second light may be green light, and the third light may be blue light.

[0076] Among the first to third luminous regions PXA-1, PXA-2, and PXA-3, the area of ​​the third luminous region PXA-3 can be the largest, and the area of ​​the second luminous region PXA-2 can be the smallest. However, this is merely an example, and the areas of the first to third luminous regions PXA-1, PXA-2, and PXA-3 are not limited thereto. Figure 3 The diagram illustrates a first luminescent region PXA-1 and a third luminescent region PXA-3 arranged alternately in a row, with a second luminescent region PXA-2 separated from and / or spaced apart from the first luminescent region PXA-1 and the third luminescent region PXA-3 (e.g., spaced apart or separated) and arranged in another row. However, this is merely an example, and the arrangement of the first to third luminescent regions PXA-1, PXA-2, and PXA-3 is not limited thereto.

[0077] Figure 4 This is a cross-sectional view of a display panel DP according to one or more embodiments of the present disclosure. Figure 4 It shows along Figure 3 A sectional view of a portion cut off by line I-I'.

[0078] Reference Figure 4 The display panel DP may include a substrate layer BS, a circuit layer DP-CL disposed on the substrate layer BS, a display element layer DP-ED disposed on the circuit layer DP-CL, and an encapsulation layer TFE disposed on the display element layer DP-ED. In some embodiments, the display panel DP may further include a color filter layer CFL disposed on the encapsulation layer TFE and an outer coating layer OC disposed on the color filter layer CFL.

[0079] Reference Figure 4 The substrate layer BS can be a component providing a substrate surface on which a circuit layer DP-CL is disposed. The substrate layer BS may include a display area AA (see...). Figure 2B ) and a non-display area NAA around the display area AA (see Figure 2B ), and the display area AA may include the above-mentioned light-emitting area PXA and non-light-emitting area NPXA. The substrate layer BS may be a rigid substrate or a flexible substrate such as bendable, foldable, and / or rollable, etc. The substrate layer BS may be a glass substrate, a metal substrate, or a polymer substrate. However, one or more embodiments of the present disclosure are not limited thereto, and the substrate layer BS may be an inorganic layer, an organic layer, or a composite material layer.

[0080] The substrate layer BS may include a single-layer structure or a multi-layer structure. For example, the substrate layer BS may include a first synthetic resin layer, an intermediate layer in a multi-layer or single-layer structure, and a second synthetic resin layer that are sequentially stacked. The intermediate layer may be referred to as a substrate barrier layer. The intermediate layer may include a silicon oxide (SiO x , for example, 0 < x ≤ 2) layer and an amorphous silicon (a-Si) layer disposed on the silicon oxide layer, but is not particularly limited thereto. For example, the intermediate layer may include at least one of a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, and an amorphous silicon layer.

[0081] Each of the first synthetic resin layer and the second synthetic resin layer may include a polyimide-based resin. In addition, each of the first synthetic resin layer and the second synthetic resin layer may include at least one of an acrylate-based resin, a methacrylate-based resin, a polyisoprene-based resin, a vinyl-based resin, an epoxy-based resin, a urethane-based resin, a cellulose-based resin, a siloxane-based resin, a polyamide-based resin, and a perylene-based resin. In this specification, the "a" type resin refers to a functional group including "a".

[0082] The circuit layer DP-CL may be disposed on the substrate layer BS. The circuit layer DP-CL may include an insulating layer, a semiconductor pattern, a conductive pattern, and / or signal lines, etc. The insulating layer, the semiconductor layer, and the conductive layer are formed on the substrate layer BS by methods such as coating or vapor deposition, and then the insulating layer, the semiconductor layer, and the conductive layer may be selectively patterned through multiple lithography processes. Thereafter, the semiconductor pattern, the conductive pattern, and the signal lines included in the circuit layer DP-CL may be formed.

[0083] In one or more embodiments, the substrate layer BS may be a silicon substrate. The substrate layer BS may be a single-crystalline silicon wafer, a polycrystalline silicon wafer, or an amorphous silicon wafer. The circuit layer DP-CL may include an insulating layer, a semiconductor pattern, a conductive pattern, and / or signal lines, etc. formed on the silicon wafer.

[0084] The display element layer DP-ED may be disposed on the circuit layer DP-CL. The display element layer DP-ED may include a first light-emitting element to a third light-emitting element ED-1, ED-2, and ED-3, and a pixel defining film PDL. Refer to Figure 4The first to third light-emitting elements ED-1, ED-2 and ED-3 may be separated from each other (e.g., spaced apart or separated) in a direction orthogonal (e.g., perpendicular) to the third direction DR3, which is the thickness direction.

[0085] The first to third light-emitting elements ED-1, ED-2, and ED-3 can be light-emitting elements with a series structure. The first to third light-emitting elements ED-1, ED-2, and ED-3 can each include first electrodes EL1-1, EL1-2, and EL1-3, a light-emitting portion EP disposed on the first electrodes EL1-1, EL1-2, and EL1-3, and a second electrode EL2 disposed on the light-emitting portion EP. In some embodiments, each of the first to third light-emitting elements ED-1, ED-2, and ED-3 may further include a capping layer CPL. The light-emitting portion EP may include at least a plurality of emitting layers EML1, EML2, ..., and EMLn (see...). Figures 5A to 5D The light-emitting part EP will be described in more detail later.

[0086] In the first to third light-emitting elements ED-1, ED-2, and ED-3, the light-emitting portion EP can be set as a common layer. The light-emitting portion EP can be stacked with the first to third light-emitting regions PXA-1, PXA-2, and PXA-3 and the non-light-emitting region NPXA. In this specification, the stacking of one component with another is not limited to having the same area and shape on a plane, but also includes cases with different areas and / or different shapes.

[0087] In the first to third light-emitting elements ED-1, ED-2 and ED-3, the second electrode EL2 can be set as a common electrode. The second electrode EL2 can be a common layer that is stacked on all the first to third light-emitting regions PXA-1, PXA-2 and PXA-3 and the non-light-emitting region NPXA and has an integral shape.

[0088] The display element layer DP-ED of the display panel DP may include a pixel defining film PDL. The pixel defining film PDL may be disposed on at least a portion of the first electrodes EL1-1, EL1-2, and EL1-3. The pixel defining film PDL may cover a portion of the edge of each of the first electrodes EL1-1, EL1-2, and EL1-3. The pixel defining film PDL may include pixel openings P_OH that expose at least a portion of the upper surfaces of the first electrodes EL1-1, EL1-2, and EL1-3. The pixel openings P_OH may define first light-emitting areas to third light-emitting areas PXA-1, PXA-2, and PXA-3. Non-light-emitting areas NPXA may be areas corresponding to the pixel defining film PDL.

[0089] Pixel-defined films (PDLs) can include inorganic materials. Pixel-defined films (PDLs) can include silicon oxide (SiO2). x ), silicon nitride (SiN) y ) and silicon oxynitride (SiO) x N y At least one of the following, for example, 0 < x ≤ 2 and 0 < y ≤ 2. The pixel-defined film (PDL) may include, for example, silicon oxide (SiO2). x ).

[0090] The capping layer CPL can be disposed on the second electrode EL2. The capping layer CPL can comprise multiple layers or a single layer. The capping layer CPL can be an organic layer or an inorganic layer. For example, if the capping layer CPL contains inorganic materials (e.g., when the capping layer CPL contains inorganic materials), the inorganic materials can include alkali metal compounds (e.g., LiF), alkaline earth metal compounds (e.g., MgF2), SiON, SiN. x and / or SiO y In contrast, if the capping CPL includes organic materials (e.g., when the capping CPL includes organic materials), the organic materials may include α-NPD, NPB, TPD, m-MTDATA, Alq3, CuPc, N4,N4,N4',N4'-tetra(biphenyl-4-yl)biphenyl-4,4'-diamine (TPD15) and / or 4,4',4”-tris(carbazole-9-yl)triphenylamine (TCTA), or epoxy resins and / or acrylate resins (such as methacrylate resins).

[0091] In one or more embodiments, the refractive index of the capping layer CPL may be at least about 1.6 (e.g., about 1.6 or greater). For example, the refractive index of the capping layer CPL relative to light with a wavelength range of about 550 nanometers (nm) to about 660 nm may be at least about 1.6 (e.g., about 1.6 or greater).

[0092] The encapsulation layer TFE can be disposed on the display element layer DP-ED. The encapsulation layer TFE can protect the display element layer DP-ED from moisture, oxygen and / or foreign matter such as dust particles. The encapsulation layer TFE may include at least one inorganic film (hereinafter, encapsulation-inorganic film). The encapsulation layer TFE may also include at least one organic film (hereinafter, encapsulation-organic film) and at least one encapsulation-inorganic film.

[0093] The encapsulation-inorganic film can protect the display element layer DP-ED from moisture and / or oxygen, while the encapsulation-organic film can protect the display element layer DP-ED from foreign matter such as dust particles. The encapsulation-inorganic film may include silicon nitride, silicon oxynitride, silicon oxide, titanium dioxide, and / or aluminum oxide, but one or more embodiments of this disclosure are not particularly limited thereto. The encapsulation-organic film may include acrylic compounds and / or epoxy compounds, etc. The encapsulation-organic film may include photopolymerizable organic materials, but one or more embodiments of this disclosure are not particularly limited thereto.

[0094] The color filter layer (CFL) can be disposed on the encapsulation layer (TFE). The CFL may include a first filter CF1 corresponding to the first emitting region PXA-1, a second filter CF2 corresponding to the second emitting region PXA-2, and a third filter CF3 corresponding to the third emitting region PXA-3. The CFL may also include a light-shielding portion. This light-shielding portion can be a black matrix. It may include an organic or inorganic light-shielding material containing black pigment or dye. The light-shielding portion can prevent or reduce light leakage and separate the boundaries between adjacent filters CF1, CF2, and CF3.

[0095] Each of the first to third filters CF1, CF2, and CF3 may include a polymeric photosensitive resin and a colorant. In this specification, the colorant includes pigments and dyes. A red colorant includes a red pigment and a red dye, a green colorant includes a green pigment and a green dye, and a blue colorant includes a blue pigment and a blue dye.

[0096] exist Figure 4 In this design, the first filter CF1 may include a red pigment or a red dye, the second filter CF2 may include a green pigment or a green dye, and the third filter CF3 may include a blue pigment or a blue dye. For example, the first filter CF1 disposed on the first light-emitting element ED-1 may include a red colorant, the second filter CF2 disposed on the second light-emitting element ED-2 may include a green colorant, and the third filter CF3 disposed on the third light-emitting element ED-3 may include a blue colorant.

[0097] Figures 5A to 5D These are cross-sectional views of light-emitting elements ED, ED-a, ED-b, and ED-c, respectively, according to one or more embodiments of the present disclosure. Figures 5A to 5D Each illustration shows the structure of a light-emitting element, representing a light-emitting element included in the display panel DP of an embodiment. (Refer to...) Figures 5A to 5D The descriptions of the light-emitting elements ED, ED-a, ED-b, and ED-c can be applied equivalently to... Figure 4Each of the first to the third light-emitting elements ED-1, ED-2 and ED-3.

[0098] Reference Figure 5A The light-emitting element (ED) may include a first electrode EL1, a second electrode EL2, and multiple stacked components (or light-emitting stacks) ST1, ..., STn disposed between the first electrode EL1 and the second electrode EL2. The multiple stacked components ST1, ..., STn may include n stacked components ST1, ..., STn. Here, n can be an integer of 2 or greater. For example, the light-emitting element ED may include at least two stacked components. For example, the light-emitting element ED may include two stacked components, three stacked components, or four or more stacked components. The multiple light-emitting stacked components ST1, ..., STn may be sequentially stacked and disposed between the first electrode EL1 and the second electrode EL2.

[0099] Each of a plurality of light-emitting stacks ST1, ..., and STn may include emission layers EML1, ..., and EMLn, and a plurality of functional layers HIL, HTAL1, HTL, METL1, HTALn, MHTLn, ETL, and EIL. In this specification, the term "functional layer" may refer to any layer in the light-emitting stack other than the emission layer. Each of the plurality of light-emitting stacks ST1, ..., and STn may include sequentially stacked lower functional layers HIL, HTAL1, HTL, HTALn, and MHTLn, emission layers EML1, ..., and EMLn, and upper functional layers METL1, ETL, and EIL. Here, the lower functional layer may be a hole transport functional layer used for hole injection or hole transport, and the upper functional layer may be an electron transport functional layer used for electron injection or electron transport. However, one or more embodiments of this disclosure are not limited thereto.

[0100] In one or more embodiments, Figure 5A In the attached figures, the "n" following the reference numerals for the Hole Transport Auxiliary Layer (HTAL), the Intermediate Hole Transport Layer (MHTL), and the Intermediate Hole Transport Region (MHTR) indicates the sequence number of the stacked component that includes each layer. For example, in... Figure 5A In this context, "HTALn" can refer to the hole transport auxiliary layer included in the nth stack, and "MHTLn" can refer to the intermediate hole transport layer included in the nth stack.

[0101] In one or more embodiments of the light-emitting element ED, charge-generating layers CGL1, ..., and CGLn-1 may be arranged between adjacent stacks of a plurality of stacks ST1, ..., and STn. The charge-generating layers CGL1, ..., and CGLn-1 may be arranged between consecutive pairs of light-emitting stacks ST1, ..., and STn, respectively. In one or more embodiments, the light-emitting element ED may include n stacks ST1, ..., and STn and n-1 charge-generating layers CGL1, ..., and CGLn-1.

[0102] The charge generation layers CGL1, ..., and CGLn-1 may include p-type (class-like) charge generation layers p-CGL, ..., and p-CGLn-1 and / or n-type (class-like) charge generation layers n-CGL, ..., and n-CGLn-1. The charge generation layers CGL1, ..., and CGLn-1 may facilitate the movement of holes and / or electrons.

[0103] The charge-generating layers CGL1, ..., and CGLn-1 can have a layered structure in which n-type (class) charge-generating layers n-CGL1, ..., and n-CGLn-1 are bonded together with p-type (class) charge-generating layers p-CGL1, ..., and p-CGLn-1. For example, as... Figure 5A As shown, the first charge generation layer CGL1 may have a layered structure in which the first n-type (class) charge generation layer n-CGL1 and the first p-type (class) charge generation layer p-CGL1 are bonded together.

[0104] n-type charge generation layers n-CGL1, ..., and n-CGLn-1 can be charge generation layers that provide electrons to adjacent stacks. n-type charge generation layers n-CGL1, ..., and n-CGLn-1 can include n-doped materials. n-type charge generation layers n-CGL1, ..., and n-CGLn-1 can be layers in which the substrate material is doped with n-doped materials. p-type charge generation layers p-CGL1, ..., and p-CGLn-1 can be charge generation layers that provide holes to adjacent stacks. p-type charge generation layers p-CGL1, ..., and p-CGLn-1 can include p-doped materials. p-type charge generation layers p-CGL1, ..., p-CGLn-1 can be layers in which the substrate material is doped with p-doped materials. In one or more embodiments, the buffer layer may be further arranged between a consecutive pair of n-type (class) charge generation layers n-CGL1, ..., and n-CGLn-1 and p-type (class) charge generation layers p-CGL1, ..., and p-CGLn-1.

[0105] If a voltage is applied to charge generation layers CGL1, ..., and CGLn-1 (e.g., when a voltage is applied to charge generation layers CGL1, ..., and CGLn-1), the charge generation layers CGL1, ..., and CGLn-1 can generate charges (electrons and holes) by forming complexes via redox reactions. In some embodiments, the charge generation layers CGL1, ..., and CGLn-1 can provide the generated charges to each of the adjacent light-emitting stacks ST1, ..., and STn. The charge generation layers CGL1, ..., and CGLn-1 can double the efficiency of the current generated in each of the adjacent light-emitting stacks ST1, ..., and STn, and can be used to regulate the charge balance among the adjacent light-emitting stacks ST1, ..., and STn.

[0106] The charge-generating layers CGL1, ..., and CGLn-1 may comprise n-type (or similar) arylamine materials or p-type (or similar) metal oxides. For example, the charge-generating layers CGL1, ..., and CGLn-1 may comprise charge-generating compounds composed of arylamine organic compounds, metals, metal oxides, carbides, and fluorides, and / or mixtures thereof (e.g., any suitable mixtures).

[0107] For example, arylamine organic compounds may include α-NPD, 2-TNATA, TDATA, m-MTDATA, spiro-TAD, or spiro-NPB. For example, the metal may be cesium (Cs), molybdenum (Mo), vanadium (V), titanium (Ti), tungsten (W), barium (Ba), or lithium (Li). Furthermore, for example, the oxides, carbides, and fluorides of the metal may be Re₂O₇, MoO₃, V₂O₅, WO₃, TiO₂, Cs₂CO₃, BaF₂, LiF, or CsF.

[0108] In one or more embodiments, the p-type charge generation layers p-CGL, ..., and p-CGLn-1 may include organic dopants. The organic dopants may be, for example, p-type dopants. For instance, p-type dopants may include at least one of 4-[[2,3-bis[cyano-(4-cyano-2,3,5,6-tetrafluorophenyl)methylene]cyclopropylene]-cyanomethyl]-2,3,5,6-tetrafluorobenzonitrile (hereinafter, NDP9), 1,4,5,8,9,11-hexaazatriphenyl-hexanitrile (HAT-CN), 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinone dimethylethane (F4-TCNQ), and tetracyanoquinone dimethylethane (TCNQ). The organic dopants included in the p-type (like) charge generation layers p-CGL, ..., and p-CGLn-1 may comprise organic materials having a highest occupied molecular orbital (HOMO) energy level of about -6.0 eV to about -4.0 eV. In one or more embodiments, the doping concentration of the organic dopants included in the p-type (like) charge generation layers p-CGL, ..., and p-CGLn-1 may be about 0.5% to about 30%.

[0109] In the following text, refer to Figure 5B and Figure 5C The examples of light-emitting elements ED-a and ED-b, which include two and three stacked components respectively, will be described in more detail. Figure 5B One or more embodiments of a light-emitting element ED-a comprising two light-emitting stacks stacked between a first electrode EL1 and a second electrode EL2 are shown. Figure 5C One or more embodiments of a light-emitting element ED-b comprising three light-emitting stacks stacked between a first electrode EL1 and a second electrode EL2 are shown.

[0110] Reference Figure 5B One or more embodiments of the light-emitting element ED-a include a first electrode EL1, a second electrode EL2 opposite to (e.g., facing) the first electrode EL1, and a plurality of light-emitting stacks ST1 and ST2 disposed between the first electrode EL1 and the second electrode EL2. The plurality of light-emitting stacks ST1 and ST2 may include a first light-emitting stack ST1 and a second light-emitting stack ST2. Each of the first light-emitting stack ST1 and the second light-emitting stack ST2 may include an emitting layer.

[0111] In one or more embodiments of the light-emitting element ED-a, the hole transport region HTR may be disposed between the first electrode EL1 and the first emitting layer EML1. The electron transport region ETR may be disposed between the second electrode EL2 and the second emitting layer EML2. In one or more embodiments, the light-emitting element ED-a may emit light from the first electrode EL1 toward the second electrode EL2. In one or more embodiments of the light-emitting element ED-a, a structure is exemplarily shown, relative to the direction of light emission, in which the hole transport region HTR is disposed below a plurality of light-emitting stacks ST1 and ST2 and the electron transport region ETR is disposed on the upper part of the plurality of light-emitting stacks ST1 and ST2. However, one or more embodiments of the present disclosure are not limited thereto, and the light-emitting element may have an inverted element structure in which, relative to the direction of light emission, the electron transport region ETR may be disposed below a plurality of stacks ST1 and ST2 and the hole transport region HTR may be disposed on the upper part of the plurality of stacks ST1 and ST2.

[0112] The light-emitting element ED-a according to one or more embodiments may include a charge-generating layer CGL1 disposed between a plurality of light-emitting stacks ST1 and ST2. The light-emitting element ED-a according to one or more embodiments may include a first charge-generating layer CGL1 disposed between a first light-emitting stack ST1 and a second light-emitting stack ST2.

[0113] Reference Figure 5B A light-emitting element ED-a according to one or more embodiments may include a first electrode EL1, a first light-emitting stack ST1, a first charge-generating layer CGL1, a second light-emitting stack ST2, and a second electrode EL2. In the light-emitting element ED-a, each of the first light-emitting stack ST1, the first charge-generating layer CGL1, and the second light-emitting stack ST2 can be configured as a common layer. Because the first emission layer EML1 and the second emission layer EML2, configured as common layers, can be deposited without a mask, pixels with a smaller area can be formed. In a display panel DP according to one or more embodiments, a plurality of pixels with a smaller area are arranged on a plane, thus achieving high resolution.

[0114] In one or more embodiments of the light-emitting element ED-a, each of the first light-emitting stack ST1 and the second light-emitting stack ST2 includes an emission layer and a plurality of functional layers. The first light-emitting stack ST1 may include a first emission layer EML1, a hole transport region HTR disposed between the first electrode EL1 and the first emission layer EML1, and a first intermediate electron transport region disposed between the first emission layer EML1 and the first charge generation layer CGL1. The second light-emitting stack ST2 may include a second emission layer EML2, a first intermediate hole transport region MHTR1 disposed between the first charge generation layer CGL1 and the second emission layer EML2, and an electron transport region ETR disposed between the second electrode EL2 and the second emission layer EML2.

[0115] In one or more embodiments of the light-emitting element ED-a, each of the plurality of light-emitting stacks ST1 and ST2 may include an emitting layer. In one or more embodiments, the first light-emitting stack ST1 may include a first emitting layer EML1 that emits light of a first wavelength, and the second light-emitting stack ST2 may include a second emitting layer EML2 that emits light of a second wavelength different from the first wavelength. The light-emitting element ED-a, which includes a first emitting layer EML1 and a second emitting layer EML2 that generate light in different wavelength regions, can emit white light.

[0116] The hole transport region HTR can be used to transport holes supplied from the first electrode EL1 to the first emitter layer EML1. The hole transport region HTR may include a hole injection layer HIL disposed on the first electrode EL1 and a hole transport layer HTL disposed on the hole injection layer HIL. However, one or more embodiments of this disclosure are not limited thereto, and the hole transport region HTR may also include a hole-side additional layer disposed on the hole transport layer HTL. The hole-side additional layer may include at least one of a hole buffer layer, an emission auxiliary layer, and an electron blocking layer. The hole buffer layer can compensate for the resonant distance according to the wavelength of light emitted from the emitter layer, thereby improving luminous efficiency. The electron blocking layer can be used to prevent or reduce the injection of electrons from the electron transport region into the hole transport region.

[0117] The first intermediate electron transport region may include a first intermediate electron transport layer METL1 disposed on the first emitter layer EML1. The first intermediate electron transport layer METL1 may be disposed between the first emitter layer EML1 and the first charge generation layer CGL1, and may be in contact with each of the first emitter layer EML1 and the first charge generation layer CGL1. However, one or more embodiments of this disclosure are not limited thereto, and the first intermediate electron transport region may further include a first intermediate electron-side supplementary layer disposed between the first intermediate electron transport layer METL1 and the first emitter layer EML1. The first intermediate electron-side supplementary layer may include at least one of an electron buffer layer and a hole blocking layer. In some embodiments, a first intermediate electron injection layer may be disposed between the first intermediate electron transport layer METL1 and the first charge generation layer CGL1.

[0118] The second light-emitting stack ST2 may include a first intermediate hole transport region MHTR1 and an electron transport region ETR. The first intermediate hole transport region MHTR1 transports holes generated from the first charge generation layer CGL1 to the second emission layer EML2, and the electron transport region ETR transports electrons provided by the second electrode EL2 to the second emission layer EML2.

[0119] The first intermediate hole transport region MHTR1 may include a first intermediate hole transport layer MHTL1 disposed on the first charge generation layer CGL1. The first intermediate hole transport layer MHTL1 may be in contact with the lower surface of the second emitter layer EML2. However, one or more embodiments of this disclosure are not limited thereto, and the first intermediate hole transport region MHTR1 may also include a first intermediate hole-side supplementary layer disposed on the first intermediate hole transport layer MHTL1. The first intermediate hole-side supplementary layer may include at least one of a hole buffer layer, an emitter assistance layer, and an electron blocking layer.

[0120] The electron transport region (ETR) may include an electron transport layer (ETL) disposed on the second emitter layer (EML2) and an electron injection layer (EIL) disposed on the ETL. The ETL may be in contact with the upper surface of the second emitter layer (EML2). However, one or more embodiments of this disclosure are not limited thereto, and the ETL may further include an electron-side supplementary layer disposed between the ETL and the second emitter layer (EML2). The electron-side supplementary layer may include at least one of an electron buffer layer and a hole blocking layer.

[0121] In one or more embodiments of the light-emitting element ED-a, at least one of the hole transport region HTR and the first intermediate hole transport region MHTR1 includes hole transport auxiliary layers HTAL1 and HTAL2. Hole transport auxiliary layers HTAL1 and HTAL2 may include a hole transport material and a fluorinated compound. Hole transport auxiliary layers HTAL1 and HTAL2 may include a first amine compound and a first fluorinated compound. In one or more embodiments, hole transport auxiliary layers HTAL1 and HTAL2 may not include (e.g., may exclude) (e.g., any) p-doped material.

[0122] In one or more embodiments of the light-emitting element ED-a, hole transport auxiliary layers HTAL1 and HTAL2 may be arranged adjacent to at least one of the hole injection layer HIL and the first p-type (class) charge generation layer p-CGL1. For example, one or more embodiments of the light-emitting element ED-a may include hole transport auxiliary layers HTAL1 and HTAL2 in contact with at least one of the hole injection layer HIL and the first p-type (class) charge generation layer p-CGL1. In one or more embodiments, in this specification, the phrase "in contact with" may refer to the absence of an intervening layer, film, region, and / or plate between a component such as a layer, film, region, and / or plate and another component. For example, the phrase "in contact with" may refer to arrangement between two layers or two components without the use of additional components (such as separate functional layers or adhesive components).

[0123] Hole transport auxiliary layers HTAL1 and HTAL2 can be layers in the light-emitting element ED-a that block current paths in the horizontal direction and promote current paths in the vertical direction. For example, hole transport auxiliary layers HTAL1 and HTAL2 can be configured to provide a vertical conduction path between the hole injection layer HIL and the hole transport layer HTL, or between the first p-type (like) charge generation layer p-CGL1 and the first intermediate hole transport layer MHTL1.

[0124] like Figure 5BAs shown, a light-emitting element ED-a in one or more embodiments may include a first hole transport auxiliary layer HTAL1 arranged adjacent to a hole injection layer HIL and a second hole transport auxiliary layer HTAL2 arranged adjacent to a first p-type charge generation layer p-CGL1. The first hole transport auxiliary layer HTAL1 may be arranged between the hole injection layer HIL and the hole transport layer HTL. The first hole transport auxiliary layer HTAL1 may be directly arranged on the hole injection layer HIL. For example, the lower surface of the first hole transport auxiliary layer HTAL1 may contact the upper surface of the hole injection layer HIL. The second hole transport auxiliary layer HTAL2 may be arranged between the first p-type charge generation layer p-CGL1 and the first intermediate hole transport layer MHTL1. The second hole transport auxiliary layer HTAL2 may be directly arranged on the first p-type charge generation layer p-CGL1. For example, the lower surface of the second hole transport auxiliary layer HTAL2 may contact the upper surface of the first p-type charge generation layer p-CGL1. However, one or more embodiments of this disclosure are not limited thereto, and are related to Figure 5B The configuration shown is different; the first hole transport auxiliary layer HTAL1 adjacent to the hole injection layer HIL may not be provided, and only the second hole transport auxiliary layer HTAL2 adjacent to the first p-type (class) charge generation layer p-CGL1 may be provided. In some embodiments, the second hole transport auxiliary layer HTAL2 adjacent to the first p-type (class) charge generation layer p-CGL1 may not be provided, and only the first hole transport auxiliary layer HTAL1 adjacent to the hole injection layer HIL may be provided. (Refer to later...) Figures 6A to 6C A more detailed description of the hole transport auxiliary layer.

[0125] In one or more embodiments, the hole injection layer HIL and the layer in the first p-type (like) charge generation layer p-CGL1 (adjacent to the hole transport auxiliary layers HTAL1 and HTAL2) may include a p-dopant, a hole transport material, and a fluorinated compound. In one or more embodiments of the light-emitting element ED-a, the layer in the hole injection layer HIL and the layer in the first p-type (like) charge generation layer p-CGL1 (adjacent to the hole transport auxiliary layers HTAL1 and HTAL2) includes a p-dopant, a second amine compound, and a second fluorinated compound. In one or more embodiments of the light-emitting element ED-a, the layer in the hole injection layer HIL and the layer in the first p-type (like) charge generation layer p-CGL1 (in contact with the hole transport auxiliary layers HTAL1 and HTAL2) may include a p-dopant, a second amine compound, and a second fluorinated compound. For example, if one or more embodiments of the light-emitting element ED-a include a first hole transport auxiliary layer HTAL1 in contact with the hole injection layer HIL (e.g., when one or more embodiments of the light-emitting element ED-a include a first hole transport auxiliary layer HTAL1 in contact with the hole injection layer HIL), the hole injection layer HIL may include a p-doper, a second amine compound, and a second fluorinated compound. In some embodiments, if one or more embodiments of the light-emitting element ED-a include a second hole transport auxiliary layer HTAL2 in contact with a first p-type (class) charge generation layer p-CGL1 (e.g., when one or more embodiments of the light-emitting element ED-a include a second hole transport auxiliary layer HTAL2 in contact with the first p-type (class) charge generation layer p-CGL1), the first p-type (class) charge generation layer p-CGL1 may include a p-doper, a second amine compound, and a second fluorinated compound. In some embodiments, if the light-emitting element ED-a includes a first hole transport auxiliary layer HTAL1 in contact with the hole injection layer HIL and a second hole transport auxiliary layer HTAL2 in contact with the first p-type charge generation layer p-CGL1 (for example, when the light-emitting element ED-a includes a first hole transport auxiliary layer HTAL1 in contact with the hole injection layer HIL and a second hole transport auxiliary layer HTAL2 in contact with the first p-type charge generation layer p-CGL1), the hole injection layer HIL and the first p-type charge generation layer p-CGL1 may each independently include a p-doper, a second amine compound, and a second fluorine-containing compound.

[0126] In one or more embodiments, the first amine compound and the second amine compound may be the same as or different from each other. For example, the first amine compound included in the first hole transport assist layer HTAL1 and the second amine compound included in the hole injection layer HIL may be the same as or different from each other. In some embodiments, the first amine compound included in the second hole transport assist layer HTAL2 and the second amine compound included in the first p-type (class) charge generation layer p-CGL1 may be the same as or different from each other.

[0127] In one or more embodiments, the first fluorinated compound and the second fluorinated compound may be the same as or different from each other. For example, the first fluorinated compound included in the first hole transport assist layer HTAL1 and the second fluorinated compound included in the hole injection layer HIL may be the same as or different from each other. In some embodiments, the first fluorinated compound included in the second hole transport assist layer HTAL2 and the second fluorinated compound included in the first p-type (class) charge generation layer p-CGL1 may be the same as or different from each other.

[0128] Figure 5C The light-emitting element ED-b shown is... Figure 5B The difference between the light-emitting element ED-a shown is the number of light-emitting stacks included in the light-emitting element. Compared to... Figure 5B The structures shown are different. Figure 5C The light-emitting element ED-b in one or more embodiments shown differs from the light-emitting element ED-a in that it includes three light-emitting stacks ST1, ST2 and ST3.

[0129] Reference Figure 5C According to one or more embodiments of the present disclosure, the light-emitting element ED-b may include a first electrode EL1, a second electrode EL2 opposite to (e.g., facing the first electrode EL1), three light-emitting stacks ST1, ST2, and ST3 disposed between the first electrode EL1 and the second electrode EL2, and charge-generating layers CGL1 and CGL2 disposed between consecutive pairs of light-emitting stacks in the three light-emitting stacks ST1, ST2, and ST3, respectively. The first charge-generating layer CGL1 may be disposed between the first light-emitting stack ST1 and the second light-emitting stack ST2. The second charge-generating layer CGL2 may be disposed between the second light-emitting stack ST2 and the third light-emitting stack ST3.

[0130] The first charge generation layer CGL1 and the second charge generation layer CGL2 may each include n-type (class) charge generation layers n-CGL1 and n-CGL2, and p-type (class) charge generation layers p-CGL1 and p-CGL2. The first charge generation layer CGL1 may include a first n-type (class) charge generation layer n-CGL1 disposed on the first light-emitting stack ST1, and a first p-type (class) charge generation layer p-CGL1 disposed on the first n-type (class) charge generation layer n-CGL1. The second charge generation layer CGL2 may include a second n-type (class) charge generation layer n-CGL2 and a second p-type (class) charge generation layer p-CGL2 disposed on the second n-type (class) charge generation layer n-CGL2.

[0131] In one or more embodiments of the light-emitting element ED-b, the hole transport region HTR may be disposed between the first electrode EL1 and the first emitter layer EML1. The electron transport region ETR may be disposed between the second electrode EL2 and the third emitter layer EML3. Multiple light-emitting stacks ST1, ST2, and ST3 may each include emitter layers EML1, EML2, and EML3, and may include intermediate hole transport regions MHTR1 and MHTR2 and / or intermediate electron transport regions disposed between one of the emitter layers EML1, EML2, and EML3 and one of the adjacent charge generation layers CGL1 and CGL2.

[0132] In one or more embodiments of the light-emitting element ED-b, each of the plurality of light-emitting stacks ST1, ST2, and ST3 may include an emitting layer. In one or more embodiments, the first light-emitting stack ST1 may include a first emitting layer EML1 that emits light of a first wavelength, the second light-emitting stack ST2 may include a second emitting layer EML2 that emits light of a second wavelength different from the first wavelength, and the third light-emitting stack ST3 may include a third emitting layer EML3 that emits light of a third wavelength different from the first and second wavelengths. The light-emitting element ED-b, which includes the first to third emitting layers EML1, EML2, and EML3 that generate light in different wavelength regions, can emit white light.

[0133] In the light-emitting element ED-b, each of the first light-emitting stack ST1, the first charge-generating layer CGL1, the second light-emitting stack ST2, the second charge-generating layer CGL2, and the third light-emitting stack ST3 can be configured as a common layer. Because the first to third emission layers EML1, EML2, and EML3, configured as common layers, can be deposited without a mask, pixels with smaller areas can be formed. In the display panel DP according to one or more embodiments (see...), ... Figure 2B In a plane, many pixels with a small area are arranged on a plane, thus enabling high resolution.

[0134] In one or more embodiments of the light-emitting element ED-b, each of the first light-emitting stack to the third light-emitting stack ST1, ST2 and ST3 includes an emission layer and multiple functional layers.

[0135] The first light-emitting stack ST1 may include a first emitter layer EML1, a hole transport region HTR disposed between the first electrode EL1 and the first emitter layer EML1, and a first intermediate electron transport region disposed between the first emitter layer EML1 and the first charge generation layer CGL1. The hole transport region HTR may include a hole injection layer HIL disposed on the first electrode EL1 and a hole transport layer HTL disposed on the hole injection layer HIL. The first intermediate electron transport region may include a first intermediate electron transport layer METL1 disposed on the first emitter layer EML1. Figure 5B The description in [the document] can be applied equivalently to [other applications]. Figure 5C The hole transport region HTR and the first intermediate electron transport layer METL1 are shown in the figure.

[0136] The second light-emitting stack ST2 may include a second emitting layer EML2, a first intermediate hole transport region MHTR1 disposed between the first charge generation layer CGL1 and the second emitting layer EML2, and a second intermediate electron transport region disposed between the second charge generation layer CGL2 and the second emitting layer EML2. The first intermediate hole transport region MHTR1 may include a first intermediate hole transport layer MHTL1 disposed on the first charge generation layer CGL1. Figure 5B The description in [the document] can be applied equivalently to [other applications]. Figure 5C The first intermediate hole transport region MHTR1 is shown. The second intermediate electron transport region may include a second intermediate electron transport layer METL2 disposed on the second emitter layer EML2. However, one or more embodiments of this disclosure are not limited thereto, and the second intermediate electron transport region may also include a second intermediate electron-side supplementary layer disposed between the second intermediate electron transport layer METL2 and the second emitter layer EML2. The second intermediate electron-side supplementary layer may include at least one of an electron buffer layer and a hole blocking layer. In some embodiments, a second intermediate electron injection layer may be disposed between the second intermediate electron transport layer METL2 and the second charge generation layer CGL2.

[0137] The third light-emitting stack ST3 may include a third emitting layer EML3, a second intermediate hole transport region MHTR2 disposed between the second charge generation layer CGL2 and the third emitting layer EML3, and an electron transport region ETR disposed between the second electrode EL2 and the third emitting layer EML3. The second intermediate hole transport region MHTR2 may include a second intermediate hole transport layer MHTL2 disposed on the second charge generation layer CGL2. The second intermediate hole transport layer MHTL2 may be in contact with the lower surface of the third emitting layer EML3. However, one or more embodiments of this disclosure are not limited thereto, and the second intermediate hole transport region MHTR2 may also include a second intermediate hole-side additional layer disposed on the second intermediate hole transport layer MHTL2. The second intermediate hole-side additional layer may include at least one of a hole buffer layer, an emission assist layer, and an electron blocking layer. The electron transport region ETR may include an electron transport layer ETL disposed on the third emitting layer EML3 and an electron injection layer EIL disposed on the electron transport layer ETL. Figure 5B The description in [the document] can be applied equivalently to [other applications]. Figure 5C The Electronic Transmission Region (ETR) is shown in the diagram.

[0138] In one or more embodiments of the light-emitting element ED-b, at least one of the hole transport region HTR, the first intermediate hole transport region MHTR1, and the second intermediate hole transport region MHTR2 includes hole transport auxiliary layers HTAL1, HTAL2, and HTAL3. Hole transport auxiliary layers HTAL1, HTAL2, and HTAL3 may include a hole transport material and a fluorinated compound. Hole transport auxiliary layers HTAL1, HTAL2, and HTAL3 may include a first amine compound and a first fluorinated compound. Hole transport auxiliary layers HTAL1, HTAL2, and HTAL3 may be arranged adjacent to at least one of the hole injection layer HIL and the p-type (like) charge generation layers p-CGL1 and p-CGL2. For example, one or more embodiments of the light-emitting element ED-b may include hole transport auxiliary layers HTAL1, HTAL2, and HTAL3 in contact with at least one of the hole injection layer HIL and the p-type (like) charge generation layers p-CGL1 and p-CGL2.

[0139] like Figure 5C As shown, the light-emitting element ED-b in one or more embodiments may include a first hole transport auxiliary layer HTAL1 arranged adjacent to the hole injection layer HIL, a second hole transport auxiliary layer HTAL2 arranged adjacent to the first p-type charge generation layer p-CGL1, and a third hole transport auxiliary layer HTAL3 arranged adjacent to the second p-type charge generation layer p-CGL2.

[0140] A first hole transport auxiliary layer HTAL1 can be disposed between a hole injection layer HIL and a hole transport layer HTL. The first hole transport auxiliary layer HTAL1 can also be disposed directly on the hole injection layer HIL. For example, the lower surface of the first hole transport auxiliary layer HTAL1 can contact the upper surface of the hole injection layer HIL. A second hole transport auxiliary layer HTAL2 can be disposed between a first p-type charge generation layer p-CGL1 and a first intermediate hole transport layer MHTL1. The second hole transport auxiliary layer HTAL2 can also be disposed directly on the first p-type charge generation layer p-CGL1. For example, the lower surface of the second hole transport auxiliary layer HTAL2 can contact the upper surface of the first p-type charge generation layer p-CGL1. A third hole transport auxiliary layer HTAL3 can be disposed between the second p-type charge generation layer p-CGL2 and the second intermediate hole transport layer MHTL2. The third hole transport auxiliary layer HTAL3 can also be disposed directly on the second p-type charge generation layer p-CGL2. For example, the lower surface of the third hole transport auxiliary layer HTAL3 can contact the upper surface of the second p-type (like) charge generation layer p-CGL2. However, one or more embodiments of this disclosure are not limited thereto, and are related to Figure 5B The configuration shown is different, and at least one of the first hole transport auxiliary layers to the third hole transport auxiliary layers HTAL1, HTAL2 and HTAL3 may not be provided.

[0141] In one or more embodiments, the hole injection layer HIL and one of the p-type (quasi-)charge generation layers p-CGL1 and p-CGL2 (adjacent to the hole transport auxiliary layers HTAL1, HTAL2, and HTAL3) may include a p-dopant, a hole transport material, and / or a fluorinated compound. In the light-emitting element ED-b in one or more embodiments, the hole injection layer HIL and one of the p-type (quasi-)charge generation layers p-CGL1 and p-CGL2 (adjacent to the hole transport auxiliary layers HTAL1, HTAL2, and HTAL3) may include a p-dopant, a second amine compound, and a second fluorinated compound. For example, if the light-emitting element ED-b includes a first hole transport auxiliary layer HTAL1 in contact with the hole injection layer HIL (e.g., when the light-emitting element ED-b includes a first hole transport auxiliary layer HTAL1 in contact with the hole injection layer HIL), the hole injection layer HIL may include a p-dopant, a second amine compound, and a second fluorinated compound. In some embodiments, if the light-emitting element ED-b includes a second hole transport auxiliary layer HTAL2 in contact with the first p-type charge generation layer p-CGL1 (e.g., when the light-emitting element ED-b includes a second hole transport auxiliary layer HTAL2 in contact with the first p-type charge generation layer p-CGL1), the first p-type charge generation layer p-CGL1 may include a p-dopant, a second amine compound, and / or a second fluorinated compound. When the light-emitting element ED-b includes a third hole transport auxiliary layer HTAL3 in contact with the second p-type charge generation layer p-CGL2, the second p-type charge generation layer p-CGL2 may include a p-dopant, a second amine compound, and / or a second fluorinated compound.

[0142] In one or more embodiments of the light-emitting elements ED-a and ED-b, the hole injection layer HIL or the p-type (like) charge generation layers p-CGL1 and p-CGL2 can be formed as p-doped materials to achieve relatively high charge mobility. When the hole injection layer HIL or the p-type (like) charge generation layers p-CGL1 and p-CGL2 are formed as a common layer, they may act as paths for charge movement, resulting in lateral leakage current in which charge flows into a pixel through the hole injection layer HIL or the p-type (like) charge generation layers p-CGL1 and p-CGL2 during the driving of another pixel.

[0143] The light-emitting elements ED-a and ED-b according to one or more embodiments of the present disclosure may include hole transport auxiliary layers HTAL1, HTAL2 and HTAL3 arranged adjacent to at least one of hole injection layer HIL and p-type (class-like) charge generation layers p-CGL1 and p-CGL2 (e.g., selected from at least one of them) and containing a first amine compound and a first fluorine-containing compound, and a layer of hole injection layer HIL and p-type (class-like) charge generation layers p-CGL1 and p-CGL2 (which is adjacent to hole transport auxiliary layers HTAL1, HTAL2 and HTAL3) may include a second amine compound and a second fluorine-containing compound, thereby preventing or reducing the occurrence of lateral leakage current.

[0144] Figure 5D A light-emitting element ED-c of one or more embodiments is shown. In the following, with reference to... Figure 5D When describing one or more embodiments of the light-emitting element ED-c, the same reference numerals are assigned to the same components as those described herein, and their detailed descriptions are omitted.

[0145] Reference Figure 5D According to one or more embodiments, the light-emitting element ED-c may include a first electrode EL1, a second electrode EL2 opposite to the first electrode EL1 (e.g., facing the first electrode EL1), a plurality of light-emitting stacks ST1, ST2 and ST3 disposed between the first electrode EL1 and the second electrode EL2, and charge-generating layers CGL1 and CGL2 disposed between the plurality of light-emitting stacks ST1, ST2 and ST3. Figure 5D An exemplary illustration shows a light-emitting element ED-c comprising a total of three stacked components ST1, ST2, and ST3; however, one or more embodiments of this disclosure are not limited thereto, and the light-emitting element ED-c may comprise four or more stacked components.

[0146] In one or more embodiments, the p-type charge generation layers p-CGL1 and p-CGL2 may include p-type dopants. Each of the first p-type charge generation layer p-CGL1 included in the first charge generation layer CGL1 and the second p-type charge generation layer p-CGL2 included in the second charge generation layer CGL2 may include p-type dopants. Figure 5A The foregoing description can be applied equally to p-type (class) dopants.

[0147] In one or more embodiments, at least one of the p-type (class-a) charge-generating layers p-CGL1 and p-CGL2 (e.g., selected from at least one of them) may comprise an amine compound and a fluorinated compound. For example, in Figure 5DIn the light-emitting element ED-c shown, each of the first p-type charge generation layer p-CGL1 and the second p-type charge generation layer p-CGL2 may include an amine compound and a fluorine-containing compound.

[0148] Multiple light-emitting stacks ST1, ST2, and ST3 each include an emitting layer EML1, EML2, and EML3, and multiple functional layers. Each of the hole transport region HTR and intermediate electron transport region of the first light-emitting stack ST1 may include at least one functional layer HTR-OL1, HTR-OL2, or METR1-OL. Each of the first intermediate hole transport region MHTR1 and the second intermediate electron transport region of the second light-emitting stack ST2 may include at least one functional layer MHTR1-OL1, MHTR1-OL2, or METR2-OL. Each of the second intermediate hole transport region MHTR2 and the electron transport region ETR of the third light-emitting stack ST3 may include at least one functional layer MHTR2-OL1, MHTR2-OL2, ETR-OL1, or ETR-OL2.

[0149] In one or more embodiments, at least one of the functional layers MHTR1-OL1 and MHTR2-OL1 adjacent to the p-type (class-like) charge generation layers p-CGL1 and p-CGL2 included in the plurality of functional layers in the plurality of light-emitting stacks ST1, ST2, and ST3 (e.g., selected from at least one of them) may include an amine compound and a fluorinated compound. At least one of the functional layers MHTR1-OL1 and MHTR2-OL1 in contact with the p-type (class-like) charge generation layers p-CGL1 and p-CGL2 included in the plurality of functional layers in the plurality of light-emitting stacks ST1, ST2, and ST3 (e.g., selected from at least one of them) may include an amine compound and a fluorinated compound. The light-emitting element ED-c according to one or more embodiments of this disclosure may include an amine compound and a fluorinated compound in the p-type (class-like) charge generation layers p-CGL1 and p-CGL2, and may include separate amine compounds and fluorinated compounds in functional layers formed in contact with the p-type (class-like) charge generation layers p-CGL1 and p-CGL2.

[0150] The amine compounds included in the p-type (class-like) charge-generating layers p-CGL1 and p-CGL2 may be the same as or different from the amine compounds included in the adjacent functional layers. In some embodiments, the fluorinated compounds included in the p-type (class-like) charge-generating layers p-CGL1 and p-CGL2 may be the same as or different from the fluorinated compounds included in the adjacent functional layers.

[0151] Figure 5EOne or more embodiments of a light-emitting stack ST-R, which is included in a light-emitting element of one or more embodiments, are shown.

[0152] Included Figures 5A to 5D At least one of the light-emitting stacks in the light-emitting elements ED, ED-a, ED-b, and ED-c shown (e.g., at least one selected from them) may have Figure 5E The structure of the ST-R light-emitting stack shown. For example, in Figure 5A In one or more embodiments of the light-emitting element ED shown, at least one of the plurality of light-emitting stacks ST1, ..., STn (e.g., at least one selected therefrom) may have Figure 5E The structure of the light-emitting stack ST-R is shown. In one or more embodiments, in Figure 5B In one or more embodiments of the light-emitting element ED-a shown, at least one of the first light-emitting stack ST1 and the second light-emitting stack ST2 (e.g., selected from at least one of them) may have Figure 5E The structure of the light-emitting stack ST-R is shown. In one or more embodiments, in Figure 5C and Figure 5D In the light-emitting elements ED-b and ED-c of the embodiments shown, at least one of the first to third light-emitting stacks ST1, ST2 and ST3 (e.g., at least one selected therefrom) may have Figure 5E The structure of the ST-R light-emitting stack shown is illustrated.

[0153] Reference Figure 5E The light-emitting stack ST-R may include a first organic layer HTR-OL, an emitting layer EML-L disposed on the first organic layer HTR-OL, and a second organic layer ETR-OL disposed on the emitting layer EML-L. The light-emitting stack ST-R may include the first organic layer HTR-OL, the emitting layer EML-L, and the second organic layer ETR-OL sequentially stacked on a third direction DR3, which is the thickness direction.

[0154] The first organic layer, HTR-OL, can be referenced here. Figures 5A to 5D The hole transport regions HTR or intermediate hole transport regions MHTR1, MHTR2, and MHTRn are described. The second organic layer ETR-OL can be referenced here. Figures 5A to 5D The described electronic transmission region (ETR) or intermediate electronic transmission region.

[0155] Figure 5EThe light-emitting stack ST-R shown in one or more embodiments may include multiple emitting layers EML-L1 and EML-L2. For example, the emitting layer EML-L included in the light-emitting stack ST-R may have a double-layer structure. The multiple emitting layers EML-L1 and EML-L2 included in the light-emitting stack ST-R may emit light in different wavelength ranges.

[0156] like Figure 5E As shown, one or more embodiments of the light-emitting stack ST-R may include a first sub-emitting layer EML-L1 and a second sub-emitting layer EML-L2. The first sub-emitting layer EML-L1 and the second sub-emitting layer EML-L2 may be in contact with each other. In the light-emitting elements ED, ED-a, ED-b, and ED-c of the embodiments, the first sub-emitting layer EML-L1 may be arranged adjacent to the first electrode EL1, and the second sub-emitting layer EML-L2 may be arranged adjacent to the second electrode EL2. In one or more embodiments, the first sub-emitting layer EML-L1 may emit light of a first wavelength, and the second sub-emitting layer EML-L2 may emit light of a second wavelength different from the first wavelength.

[0157] Refer again Figures 5A to 5D In the light-emitting elements ED, ED-a, ED-b, and ED-c according to one or more embodiments, the first electrode EL1 is conductive (e.g., a conductor). The first electrode EL1 may be formed of a metallic material, a metal alloy, or a conductive compound. The first electrode EL1 may be an anode or a cathode. However, one or more embodiments of this disclosure are not limited thereto. In some embodiments, the first electrode EL1 may be a pixel electrode.

[0158] In the light-emitting elements ED, ED-a, ED-b, and ED-c according to one or more embodiments, the first electrode EL1 may be a reflective electrode. For example, the first electrode EL1 may include materials having high reflectivity such as Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, W, In, Zn, Sn, or compounds or mixtures thereof (e.g., a mixture of Ag and Mg), or materials having a multilayer structure (such as LiF / Ca or LiF / Al). In one or more embodiments, the first electrode EL1 may have a multilayer structure including a reflective film formed from the materials described herein and a transparent conductive film formed from indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and / or indium tin zinc oxide (ITZO). For example, the first electrode EL1 may have a two-layer structure of ITO / Ag and a three-layer structure of ITO / Ag / ITO, but one or more embodiments of this disclosure are not limited thereto. In some embodiments, one or more embodiments of this disclosure are not limited thereto, and the first electrode EL1 may include the metallic material described herein, a combination of at least two metallic materials described herein, and / or an oxide of the metallic material described herein, etc. The first electrode EL1 may have a thickness of about 70 nm to about 1,000 nm. For example, the first electrode EL1 may have a thickness of about 100 nm to about 300 nm.

[0159] In the light-emitting elements ED, ED-a, ED-b and ED-c according to one or more embodiments, the hole transport region HTR and the intermediate hole transport regions MHTR1, MHTR2 and MHTRn may each have a single layer formed of a single material, a single layer formed of multiple different materials, or a multilayer structure including multiple layers formed of multiple different materials.

[0160] Hole transport region HTR and intermediate hole transport regions MHTR1, MHTR2 and MHTRn can all be formed using one or more suitable methods, such as vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) method, inkjet printing, laser printing and / or laser-induced thermal imaging (LITI) method.

[0161] The hole transport region HTR and the intermediate hole transport regions MHTR1, MHTR2 and MHTRn can all be made of suitable general hole transport materials in the art without limitation.

[0162] The hole transport region HTR and the intermediate hole transport regions MHTR1, MHTR2, and MHTRn may each independently include a compound represented by Formula H-1. For example, the hole transport auxiliary layers HTAL1 and HTAL2 may include an amine compound represented by Formula H-1 as a first amine compound. In one or more embodiments, the hole injection layer HIL and / or the p-type (like) charge generation layers p-CGL1 and p-CGL2 may include an amine compound represented by Formula H-1 as a second amine compound.

[0163] Formula H-1

[0164]

[0165] In formula H-1, L1 and L2 can each be independently a straight-linked, substituted or unsubstituted aryl group having 6 to 30 cyclic carbon atoms, or a substituted or unsubstituted heteroaryl group having 2 to 30 cyclic carbon atoms. a and b can each be independently an integer from 0 to 10. In one or more embodiments, if a or b is an integer of 2 or greater (e.g., when a or b is an integer of 2 or greater), multiple L1 and L2 can each be independently a substituted or unsubstituted aryl group having 6 to 30 cyclic carbon atoms, or a substituted or unsubstituted heteroaryl group having 2 to 30 cyclic carbon atoms.

[0166] In formula H-1, Ar1 and Ar2 can each be independently a substituted or unsubstituted aryl group having 6 to 30 cyclic carbon atoms, or a substituted or unsubstituted heteroaryl group having 2 to 30 cyclic carbon atoms. In some embodiments, in formula H-1, Ar3 can be a substituted or unsubstituted aryl group having 6 to 30 cyclic carbon atoms, or a substituted or unsubstituted heteroaryl group having 2 to 30 cyclic carbon atoms.

[0167] The compound represented by formula H-1 can be a monoamine compound. In one or more embodiments, the compound represented by formula H-1 can be a diamine compound in which at least one of Ar1 to Ar3 (e.g., selected from at least one of them) includes an amino group as a substituent. In some embodiments, the compound represented by formula H-1 can be a carbazole compound comprising a substituted or unsubstituted carbazole group in at least one of Ar1 and Ar2, or a fluorene compound comprising a substituted or unsubstituted fluorene group in at least one of Ar1 and Ar2.

[0168] The compound represented by formula H-1 can be represented by any of the compounds in group H (e.g., selected from them). However, the compounds listed in group H are examples, and the compound represented by formula H-1 is not limited to the compounds represented by group H:

[0169] Compound group H

[0170]

[0171]

[0172]

[0173] Hole transport region HTR and intermediate hole transport regions MHTR1 and MHTR2 can both include phthalocyanine compounds such as copper phthalocyanine, N1,N1'-([1,1'-biphenyl]-4,4'-diyl)bis(N1-phenyl-N4,N4-di-m-tolylphenyl-1,4-diamine) (DNTPD), 4,4',4”-[tris(3-methylphenyl)phenylamino]triphenylamine (m-MTDATA), 4,4',4”-tris(N,N-diphenylamino)triphenylamine (TDATA), 4,4',4”-tris[N(2-naphthyl)-N-phenylamino]triphenylamine (2-TNATA), poly(3,4-ethylene) Dioxothiophene / poly(4-styrene sulfonate) (PEDOT / PSS), polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA), polyaniline / camphor sulfonic acid (PANI / CSA), polyaniline / poly(4-styrene sulfonate) (PANI / PSS), N,N'-di(naphthyl-1-yl)-N,N'-diphenyl-benzidine (NPB), triphenylamine-containing polyether ketone (TPAPEK), 4-isopropyl-4'-methyldiphenyliodonium [tetra(pentafluorophenyl)borate] and / or dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexaonitrile (HATCN), etc.

[0174] In some embodiments, the hole transport region HTR, intermediate hole transport regions MHTR1, MHTR2, and MHTRn may all include carbazole derivatives (such as N-phenylcarbazole and polyvinylcarbazole), fluorene derivatives, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-diamine (TPD), triphenylamine derivatives (such as 4,4',4”-tris(carbazole-9-yl)triphenylamine (TCTA)), 4,4'-cyclohexylenebis[N,N- Bis(4-methylphenyl)aniline] (TAPC), 4,4'-bis[N,N'-(3-tolyl)amino]-3,3'-dimethylbiphenyl (HMTPD), 9-(4-tert-butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole (CzSi), 9-phenyl-9H-3,9'-biscarbazole (CCP), 1,3-bis(N-carbazolyl)benzene (mCP) and / or 1,3-bis(1,8-dimethyl-9H-carbazol-9-yl)benzene (mDCP), etc.

[0175] In addition to the materials described herein, each of the first hole transport region HTR and the intermediate hole transport regions MHTR1, MHTR2, and MHTRn may further include a charge-generating material to increase conductivity. The charge-generating material may be uniformly (e.g., substantially uniformly) or non-uniformly (e.g., substantially non-uniformly) dispersed in the hole transport region HTR and the intermediate hole transport regions MHTR1, MHTR2, and MHTRn. The charge-generating material may be, for example, a p-doped agent. The p-doped agent may include at least one of metal halide compounds, quinone derivatives, metal oxides, and cyano-containing compounds, but one or more embodiments of this disclosure are not limited thereto. For example, p-dopers may include metal halide compounds (such as CuI or RbI), quinone derivatives (such as tetracyanoquinone dimethyl ether (TCNQ) or 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinone dimethyl ether (F4-TCNQ)), metal oxides (such as tungsten oxide or molybdenum oxide), and / or cyano-containing compounds (such as dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexanitrile (HATCN) or 4-[[2,3-bis[cyano-(4-cyano-2,3,5,6-tetrafluorophenyl)methylene]cyclopropyl]-cyanomethyl]-2,3,5,6-tetrafluorobenzonitrile (NDP9)), etc., but one or more embodiments of this disclosure are not limited thereto.

[0176] The hole transport region HTR may include, in at least one of the hole injection layer HIL, the hole transport layer HTL, and the hole-side supplementary layer, a compound of the hole transport region described herein. In some embodiments, if the hole transport region HTR includes a first hole transport auxiliary layer HTAL1 (e.g., when the hole transport region HTR includes a first hole transport auxiliary layer HTAL1), then the first hole transport auxiliary layer HTAL1 may include a compound of the hole transport region described herein as a hole transport material. The intermediate hole transport regions MHTR1, MHTR2, and MHTRn may include, in at least one of the intermediate hole transport layers MHTL1, MHTL2, and MHTLn and the intermediate hole-side supplementary layer (e.g., selected from at least one of them), a compound of the hole transport region HTR described herein. In some embodiments, if the intermediate hole transport regions MHTR1, MHTR2, and MHTRn include hole transport auxiliary layers HTAL2, HTAL3, and HTALn (e.g., when the intermediate hole transport regions MHTR1, MHTR2, and MHTRn include hole transport auxiliary layers HTAL2, HTAL3, and HTALn), the hole transport auxiliary layers HTAL2, HTAL3, and HTALn may include compounds of the hole transport regions HTR as described herein as hole transport materials.

[0177] Each of the hole transport region HTR and the intermediate hole transport regions MHTR1, MHTR2, and MHTRn can have a thickness of about 10 nanometers (nm) to about 1,000 nm, for example, about 10 nm to about 500 nm. The hole injection layer HIL can have a thickness of, for example, about 5 nm to about 100 nm. Each of the hole transport layer HTL and the intermediate hole transport layers MHTL1, MHTL2, and MHTLn can have a thickness of about 5 nm to about 100 nm. The hole transport auxiliary layers HTAL1, HTAL2, HTAL3, and HTALn can have a thickness of about 5 nm to about 100 nm.

[0178] When the hole transport region HTR includes a hole-side additional layer, the hole-side additional layer can have a thickness of about 1 nm to about 100 nm. When the intermediate hole transport regions MHTR1, MHTR2, and MHTRn include intermediate hole-side additional layers, the intermediate hole-side additional layers can have a thickness of about 1 nm to about 100 nm. When the thicknesses of the hole transport region HTR, the intermediate hole transport regions MHTR1, MHTR2, and MHTRn, and the layers included therein, satisfy the ranges described herein, satisfactory hole transport properties can be obtained without significantly increasing the driving voltage.

[0179] The electron transport region (ETR) and intermediate electron transport region are arranged on the emitter layers EML1 and EML2, respectively. Each of the electron transport region (ETR) and intermediate electron transport region can have a single layer formed of a single material, a single layer formed of multiple different materials, or a multilayer structure including multiple layers formed of multiple different materials.

[0180] Each of the electronic transport region (ETR) and the intermediate electronic transport region can be made of suitable general electronic transport materials available in the art without limitation.

[0181] Both the electron transport region (ETR) and the intermediate electron transport region can be formed using one or more suitable methods (such as vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) method, inkjet printing, laser printing, laser-induced thermal imaging (LITI) method, etc.).

[0182] For example, both the electron transport region (ETR) and the intermediate electron transport region may comprise anthracene compounds. However, one or more embodiments of this disclosure are not limited thereto, and the ETR may comprise, for example, tris(8-hydroxyquinoline)aluminum (Alq3), 1,3,5-tris[(3-pyridyl)-benzyl-3-yl]benzene, 2,4,6-tris(3'-(pyridyl-3-yl)biphenyl-3-yl)-1,3,5-triazine, 2-(4-(N-phenylbenzimidazol-1-yl)phenyl)-9,10-dinaphthylanthracene, 1,3,5-tris(1-phenyl-1H-benzimidazol) -2-yl)benzene (TPBi), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole (TAZ), 4-(naphthyl-1-yl)-3,5-diphenyl-4H-1,2,4-triazole (NTAZ), 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole ( t Bu-PBD), bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum (BAlq), bis(benzoquinoline-10-hydroxy)beryllium (Bebq2), 9,10-bis(naphthyl-2-yl)anthracene (ADN), 1,3-bis[3,5-bis(pyridin-3-yl)phenyl)benzene (BmPyPhB) and / or mixtures thereof (e.g., any suitable mixture).

[0183] In some embodiments, both the electron transport region (ETR) and the intermediate electron transport region may comprise metal halides (such as LiF, NaCl, CsF, RbCl, RbI, CuI, KI, etc.), lanthanides (such as Yb), and / or co-deposited materials of metal halides and lanthanides. For example, the ETR may comprise KI:Yb, RbI:Yb, and / or LiF:Yb as co-deposited materials. In one or more embodiments, the ETR may be formed using metal oxides such as Li₂O and / or BaO, and / or lithium 8-hydroxyquinoline (Liq), but one or more embodiments of this disclosure are not limited thereto. The ETR may also be formed from a mixture of an electron transport material and an insulating organometallic salt. The organometallic salt may be a material having a band gap of about 4 eV or greater. For example, the organometallic salt may comprise, for example, metal acetates, metal benzoates, metal acetoacetates, metal acetylacetonates, or metal stearates.

[0184] In addition to the materials described herein, the electron transport region (ETR) and the intermediate electron transport region may each include at least one of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), diphenyl(4-(triphenylsilyl)phenyl)phosphine oxide (TSPO1), and 4,7-diphenyl-1,10-phenanthroline (Bphen), but one or more embodiments of this disclosure are not limited thereto.

[0185] The electron transport region (ETR) may include compounds of the electron transport region described herein in the electron injection layer (EIL) or the electron transport layer (ETL). When the electron transport region (ETR) includes an electron-side additional layer, the materials described herein may be included in the electron-side additional layer. The intermediate electron transport region may include compounds of the electron transport region described herein in the intermediate electron transport layers (METL1 and METL2). The intermediate electron transport region may include compounds of the electron transport region described herein in the intermediate electron-side additional layer or the intermediate electron injection layer.

[0186] Each of the electron transport region (ETR) and the intermediate electron transport region can have a thickness of, for example, from about 100 nm to about 150 nm. The electron transport layer (ETL) can have a thickness of from about 0.1 nm to about 100 nm, for example, from about 0.3 nm to about 50 nm. If the thickness of the electron transport layer (ETL) meets the aforementioned range, satisfactory electron transport characteristics can be obtained without significantly increasing the driving voltage. The electron injection layer (EIL) can have a thickness of from about 0.1 nm to about 10 nm and from about 0.3 nm to about 9 nm. If the thickness of the electron injection layer (EIL) meets the range described herein, satisfactory electron injection characteristics can be obtained without significantly increasing the driving voltage. The intermediate electron transport layers (METL1 and METL2) included in the intermediate electron transport region can have a thickness of from about 0.1 nm to about 100 nm, for example, from about 0.1 nm to about 50 nm.

[0187] The second electrode EL2 may include at least one selected from Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF, Mo, Ti, W, In, Sn, and Zn, a compound selected from two or more of these, a mixture selected from two or more of these, or an oxide thereof. The second electrode EL2 may be a transmission electrode, a semi-transmissive / reflective electrode, or a reflective electrode. When the second electrode EL2 is a transmission electrode, it may be formed of a transparent metal oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium tin zinc oxide (ITZO).

[0188] When the second electrode EL2 is a transmissive or reflective electrode, it may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, Yb, W, or compounds or mixtures thereof (e.g., AgMg, AgYb, or MgYb), or materials with a multilayer structure (such as LiF / Ca or LiF / Al). In one or more embodiments, the second electrode EL2 may have a multilayer structure including a reflective or transmissive film formed of the materials described herein, and a transparent conductive film formed of ITO, IZO, ZnO, and / or ITZO. For example, the second electrode EL2 may include the metallic materials described herein, combinations of at least two of the metallic materials described herein, and / or oxides of the metallic materials described herein.

[0189] Figure 6A It is a cross-sectional view of the hole transport auxiliary layer HTAL included in a light-emitting element in one or more embodiments. Figure 6A The hole transport auxiliary layer (HTAL) structure shown can be equivalently applied to... Figures 5A to 5C Each of the hole transport auxiliary layers HTAL1, HTAL2, HTAL3, and HTALn shown. In some embodiments, Figure 6A The hole transport auxiliary layer (HTAL) structure shown can be equivalently applied to... Figure 5D The functional layers MHTR1-OL1 and MHTR2-OL1 shown include a first amine compound and a first fluorinated compound, which are adjacent to the p-type (class) charge generation layers p-CGL1 and p-CGL2.

[0190] Reference Figure 6A The first amine compound and the first fluorinated compound can be configured to be phase-separated in the hole transport assist layer HTAL. The first amine compound and the first fluorinated compound can be disposed in the hole transport assist layer HTAL while being phase-separated from each other in a direction orthogonal (e.g., perpendicular) to a third direction DR3. In this specification, the term "phase separation" refers to a situation where the distribution of a particular component included in the film becomes different from the distribution of other components due to differences in component density, surface tension, or other physical properties. Here, if the hole transport assist layer HTAL is phase-separated (e.g., when the hole transport assist layer HTAL is phase-separated), the hole transport assist layer HTAL can be divided into at least two parts based on the distribution difference of the particular component (e.g., the distribution difference of the fluorinated compound).

[0191] The hole transport assist layer HTAL may include a plurality of first portions AP1 and a plurality of second portions AP2, wherein the plurality of first portions AP1 comprise a first amine compound and the plurality of second portions AP2 comprise a first fluorine-containing compound. In one or more embodiments, each of the first portions AP1 may not include (e.g., may exclude) a p-dopant. In one or more embodiments, the plurality of first portions AP1 and the plurality of second portions AP2 may be arranged alternately in a direction orthogonal to (e.g., perpendicular to) the thickness direction. The plurality of first portions AP1 and the plurality of second portions AP2 may be arranged alternately in a direction orthogonal to (e.g., perpendicular to) a third third direction DR3. In the hole transport assist layer HTAL, the second portions AP2 may be arranged between adjacent first portions AP1 in a direction orthogonal to (e.g., perpendicular to) a third third direction DR3.

[0192] Each of the plurality of first portions AP1 and the plurality of second portions AP2 may have a shape extending on a third direction DR3, which is the thickness direction. In one or more embodiments, although Figure 6A An exemplary illustration shows a hole transport auxiliary layer (HTAL) comprising three first parts (AP1) and four second parts (AP2), but one or more embodiments of this disclosure are not limited thereto.

[0193] The multiple first portions AP1 comprising a first amine compound in the hole transport assist layer HTAL can correspond to the paths through which charge movement occurs. For example, in a light-emitting element, current can flow through the first portions AP1 along a third direction DR3, which is the thickness direction. The second portions AP2 comprising a first fluorinated compound in the hole transport assist layer HTAL can exhibit insulating properties. Therefore, current flow in the hole transport assist layer HTAL can be induced to be confined to the first portions AP1. The second portions AP2 are arranged between adjacent first portions AP1 in a direction orthogonal (e.g., perpendicular) to the thickness direction, thereby preventing or reducing lateral leakage current between adjacent pixels.

[0194] In one or more embodiments, in this specification, the term "lateral leakage current" refers to the current flowing in a direction intersecting the third direction DR3, other than the current flowing on the third direction DR3 (i.e., in the direction of displaying the image) which is the stacking direction of the light-emitting elements. Lateral leakage current may refer to the current flowing in the direction intersecting the third direction DR3 (i.e., in the direction of displaying the image). Figure 3 ) and second direction DR2 (see Figure 3 Current flowing in a direction parallel to the plane defined by the plane.

[0195] In one or more embodiments, the first fluorinated compound may be a fluorine-containing material. For example, the first fluorinated compound may include at least one fluorinated polymer, such as at least one of TEFLON (e.g., a Teflon polymer or a PTFE (polytetrafluoroethylene) polymer) and CYTOP (e.g., Cytop (a cyclized transparent optical polymer)).

[0196] In one or more embodiments, the hole transport assist layer HTAL can be formed using vacuum deposition. The hole transport assist layer HTAL can be formed by depositing a first amine compound and a first fluorinated compound in parallel (e.g., simultaneously). For example, the hole transport assist layer HTAL can be formed by co-depositing the first amine compound and the first fluorinated compound on a substrate to be deposited. When the first amine compound and the first fluorinated compound are co-deposited, the first amine compound and the first fluorinated compound can phase separate on the substrate to form a plurality of first portions AP1 and a plurality of second portions AP2.

[0197] In one or more embodiments, the water contact angle of the first fluorinated compound can be about 110° or greater. When the water contact angle of the first fluorinated compound is about 110° or greater, it may be possible to alternately stack the organic material containing the first amine compound and the first fluorinated compound in the horizontal direction relative to the target substrate (e.g., when co-depositing the organic material containing the first amine compound and the first fluorinated compound). When the water contact angle of the first fluorinated compound is less than about 110°, it is difficult to arrange the organic material containing the first amine compound and the first fluorinated compound in the vertical direction, making it difficult to provide a vertical current path in the membrane, and the leakage current blocking effect may deteriorate. In one or more embodiments, in this specification, increasing the water contact angle may refer to a decrease in the free energy of the membrane surface (i.e., hydrophobicity), and decreasing the water contact angle may refer to an increase in the free energy of the membrane surface (i.e., hydrophilicity).

[0198] In one or more embodiments, in order to prevent the first fluorinated compound from impairing the hole transport properties of the first amine compound in the hole transport auxiliary layer HTAL, the lowest unoccupied molecular orbital (LUMO) energy level of the first fluorinated compound may be about 5.0 eV or less. When the lowest unoccupied molecular orbital (LUMO) energy level of the first fluorinated compound is greater than about 5.0 eV, the hole transport properties of the first amine compound may deteriorate.

[0199] In one or more embodiments, the mass ratio of the first amine compound to the first fluorinated compound in the hole transport assist layer HTAL can be from about 3:7 to about 5:5. When the mass ratio of the first amine compound to the first fluorinated compound meets the range described herein, phase separation of the first amine compound and the first fluorinated compound in the horizontal direction can occur effectively in the hole transport assist layer HTAL.

[0200] In one or more embodiments, the first fluorinated compound may have an average molecular weight of about 300 g / mol to about 5,000 g / mol. When the average molecular weight of the first fluorinated compound is less than about 300 g / mol, the compound may be pyrolyzed at high temperatures during the vacuum deposition process, thereby degrading the film durability. In some embodiments, if the average molecular weight of the first fluorinated compound is greater than about 5,000 g / mol (e.g., when the average molecular weight of the first fluorinated compound is greater than about 5,000 g / mol), the vacuum deposition temperature may be increased due to the high molecular weight, and therefore may not be suitable for forming films by co-deposition. When the average molecular weight of the first fluorinated compound meets the range described herein, the first fluorinated compound can be used in the vacuum deposition process while maintaining the thermal stability of the material, thereby further improving the film durability. In one or more embodiments, in this specification, the average molecular weight may be the exponential average molecular weight.

[0201] In the hole transport auxiliary layer HTAL, the first width W of the first part AP1 A1 The second width W of the second part AP2 A2 Each of these can be determined by the surface energy difference between the target substrate and the first fluorinated compound and / or the weight ratio of the first amine compound to the first fluorinated compound, etc. The first width W of the first portion AP1 A1 It can refer to the first part A. P1 The minimum width measured in a direction orthogonal (e.g., perpendicular) to DR3 from a third party, and the second width W of the second part AP2. A2 It can refer to the minimum width of the second part AP2 measured in a direction orthogonal (e.g., perpendicular) to the third direction DR3.

[0202] Figure 6B This is a cross-sectional view showing a partial structure of the light-emitting elements ED-a and ED-b in one or more embodiments. Figure 6B Only shown Figure 5B and Figure 5C Partial structure of the light-emitting elements ED-a and ED-b shown. Figure 6B It shows Figure 5B and Figure 5C The diagram shows a first electrode EL1, a hole injection layer HIL, a first hole transport auxiliary layer HTAL1, a hole transport layer HTL, and a first emitter layer EML1, with the remaining layers omitted. In the following text, with reference to... Figure 6B When describing a light-emitting element according to one or more embodiments of the present disclosure, the same reference numerals will be assigned to the drawings herein. Figures 5A to 5D and Figure 6A The components will be described, but no detailed description will be provided.

[0203] Reference Figure 6B In one or more embodiments, the light-emitting element may include a first hole transport auxiliary layer HTAL1 adjacent to the hole injection layer HIL. The first hole transport auxiliary layer HTAL1 may be arranged to contact the hole injection layer HIL. In one or more embodiments, the first hole transport auxiliary layer HTAL1 may include a first amine compound and a first fluorine-containing compound, and the hole injection layer HIL may include a p-doper, a second amine compound, and a second fluorine-containing compound.

[0204] In the hole injection layer HIL, the second amine compound and the second fluorinated compound can be configured to be phase-separated. The second amine compound and the second fluorinated compound can be disposed in the hole injection layer HIL while being phase-separated from each other in a direction orthogonal (e.g., perpendicular) to the third direction DR3.

[0205] The hole injection layer HIL may include a plurality of third portions HP1 and a plurality of fourth portions HP2, wherein the third portions HP1 comprise a second amine compound and a p-dopant, and the fourth portions HP2 comprise a second fluorine-containing compound. In one or more embodiments, the plurality of third portions HP1 and the plurality of fourth portions HP2 may be arranged alternately in a direction orthogonal (e.g., perpendicular) to the thickness direction. In the hole injection layer HIL, the fourth portions HP2 may be arranged between adjacent third portions HP1 in a direction orthogonal (e.g., perpendicular) to the third third direction DR3.

[0206] Each of the plurality of third portions HP1 and the plurality of fourth portions HP2 may have a shape extending along the third direction DR3, which is the thickness direction. In one or more embodiments, Figure 6B The hole injection layer HIL is shown to include three third portions HP1 and four fourth portions HP2, but one or more embodiments of this disclosure are not limited thereto.

[0207] The multiple third portions HP1 of the hole injection layer HIL, including the second amine compound, can correspond to the paths through which charge movement occurs. For example, in a light-emitting element, current can flow through the hole injection layer HIL along the third direction DR3, which is the thickness direction. The fourth portion HP2 of the hole injection layer HIL, including the second fluorinated compound, can exhibit insulating properties. Therefore, current flow in the hole injection layer HIL can be induced to be confined to the third portions HP1. The fourth portions HP2 are arranged between adjacent third portions HP1 in a direction orthogonal (e.g., perpendicular) to the thickness direction, thereby preventing or reducing lateral leakage current between adjacent pixels.

[0208] In one or more embodiments of the light-emitting element, the hole injection layer HIL can be formed as a p-doped material to achieve a relatively high charge mobility. When the hole injection layer HIL is formed as a common layer, it may act as a path for charge movement, resulting in lateral leakage current where charge flows into a pixel through the hole injection layer HIL during the driving of another pixel. According to this disclosure, in a light-emitting element comprising multiple light-emitting stacks, in addition to including an amine compound and a fluorine-containing compound in the p-doped hole injection layer HIL, a hole transport auxiliary layer HTAL1 comprising a separate amine compound and a fluorine-containing compound is arranged adjacent to the hole injection layer HIL to prevent or reduce lateral leakage current.

[0209] According to this disclosure, in addition to the hole injection layer HIL which includes amine compounds and fluorine-containing compounds, the functional layer formed to contact the hole injection layer HIL is formed to include separate amine compounds and fluorine-containing compounds, thereby preventing or reducing the occurrence of transverse leakage current.

[0210] In one or more embodiments, the second fluorinated compound may be a fluorine-containing material. For example, the second fluorinated compound may include at least one fluorinated polymer, such as at least one of TEFLON (e.g., a Teflon polymer or a PTFE (polytetrafluoroethylene) polymer) and CYTOP (e.g., Cytop (a cyclized transparent optical polymer)).

[0211] In one or more embodiments, the hole injection layer HIL can be formed using vacuum deposition. The hole injection layer HIL can be formed by depositing an organic material containing a second amine compound and a second fluorinated compound in parallel (e.g., simultaneously). For example, an organic material containing a p-doper and a second amine compound and a second fluorinated compound can be co-deposited on a substrate to form the hole injection layer HIL. When the second fluorinated compound and the organic material containing the p-doper and the second amine compound are co-deposited, the organic material and the second fluorinated compound can phase separate on the substrate to form multiple third portions HP1 and multiple fourth portions HP2.

[0212] In one or more embodiments, the water contact angle of the second fluorinated compound can be about 110° or greater. When the water contact angle of the second fluorinated compound is about 110° or greater, the organic material comprising the p-doper and the second amine compound and the second fluorinated compound can be alternately stacked in the vertical direction relative to the substrate to be deposited. When the water contact angle of the second fluorinated compound is less than about 110°, it is difficult to arrange the organic material comprising the p-doper and the second amine compound and the second fluorinated compound in the vertical direction, making it difficult to provide a vertical current path in the film, and the leakage current blocking effect may be degraded.

[0213] In one or more embodiments, in order to prevent the second fluorinated compound from impairing the hole transport properties of the second amine compound, the LUMO level of the second fluorinated compound may be about 5.0 eV or less. When the LUMO level of the second fluorinated compound is greater than about 5.0 eV, the hole transport properties of the second amine compound may deteriorate.

[0214] In one or more embodiments, the mass ratio of the second amine compound and the second fluorinated compound in the hole injection layer HIL can be from about 3:7 to about 5:5. When the mass ratio of the second amine compound and the second fluorinated compound meets the range described herein, phase separation of the second amine compound and the second fluorinated compound in the horizontal direction can occur effectively in the hole injection layer HIL.

[0215] In one or more embodiments, the molecular weight of the second fluorinated compound can be from about 300 g / mol to about 5,000 g / mol. When the molecular weight of the second fluorinated compound is less than about 300 g / mol, the compound may be pyrolyzed at high temperatures during the vacuum deposition process, thereby degrading the film durability. In some embodiments, if the molecular weight of the second fluorinated compound is greater than about 5,000 g / mol (e.g., when the molecular weight of the second fluorinated compound is greater than about 5,000 g / mol), the vacuum deposition temperature may be increased due to the high molecular weight, and therefore may not be suitable for forming films by co-deposition. When the molecular weight of the second fluorinated compound meets the range described herein, the second fluorinated compound can be used in the vacuum deposition process while maintaining the thermal stability of the material, thereby further improving the film durability.

[0216] To avoid impairing the light-emitting characteristics of the adjacent emitter layer EML1, the first hole transport auxiliary layer HTAL1 may be arranged separately from and / or spaced apart from the first emitter layer EML1 (e.g., spaced apart or separated) by a set or predetermined distance. For example, the upper surface of the first hole transport auxiliary layer HTAL1 may not be in contact with the lower surface of the first emitter layer EML1. In one or more embodiments, the first hole transport auxiliary layer HTAL1 may be arranged separately from and / or spaced apart from the first emitter layer EML1 (e.g., spaced apart or separated), and the hole transport layer HTL is positioned between the first hole transport auxiliary layer HTAL1 and the first emitter layer EML1.

[0217] In one or more embodiments, the first hole transport auxiliary layer HTAL1 may be arranged to be separated from and / or spaced apart (e.g., spaced apart or separated) from the first emitter layer EML1 by a first distance d1 relative to the thickness direction. The first distance d1 between the first hole transport auxiliary layer HTAL1 and the first emitter layer EML1 may refer to the average distance from the upper surface of the first hole transport auxiliary layer HTAL1 to the lower surface of the first emitter layer EML1. In one or more embodiments, the first distance d1 may be about 10 nm or greater. For example, the first distance d1 may be from about 10 nm to about 500 nm. When the first distance d1 is less than about 10 nm, the light emission characteristics of the first emitter layer EML1 may be degraded due to the first hole transport auxiliary layer HTAL1, and therefore, the luminous efficiency and lifetime characteristics of the light-emitting element may be degraded.

[0218] In the hole injection layer HIL, the third width W of the third part HP1 H1 And the fourth width W of the fourth part HP2 H2 Each of these can be determined by factors such as the surface energy difference between the target substrate and the second fluorinated compound and / or the weight ratio of the second amine compound to the second fluorinated compound. The third width W of the third part HP1 H1 This can refer to the minimum width of the third part HP1 measured in a direction orthogonal (e.g., perpendicular) to the third direction DR3, and the fourth width W of the fourth part HP2. H2 This can refer to the minimum width of the fourth portion HP2 measured in a direction orthogonal (e.g., perpendicular) to the third direction DR3. In one or more embodiments, the first width W of the first portion AP1... A1 and the third width W of the third part HP1 H1 They can be essentially the same, and the second width W of the second part AP2 A2 And the fourth width W of the fourth part HP2 H2 They can be substantially the same. However, one or more embodiments of this disclosure are not limited thereto.

[0219] The first portion AP1 of the first hole transport auxiliary layer HTAL1 and the third portion HP1 of the hole injection layer HIL can be stacked on top of each other in a plane. The second portion AP2 of the first hole transport auxiliary layer HTAL1 and the fourth portion HP2 of the hole injection layer HIL can be stacked on top of each other in a plane. In one or more embodiments, the first portion AP1 and the third portion HP1 can correspond to the path through which charge moves. In the light-emitting element of one or more embodiments, stable vertical current characteristics can be exhibited because the first portion AP1 of the first hole transport auxiliary layer HTAL1, comprising a first amine compound, and the third portion HP1 of the hole injection layer HIL, comprising a second amine compound, are stacked on top of each other. In some embodiments, in the light-emitting element of one or more embodiments, horizontal current flow can be effectively blocked because the second portion AP2 of the first hole transport auxiliary layer HTAL1, comprising a first fluorinated compound, and the fourth portion HP2 of the hole injection layer HIL, comprising a second fluorinated compound, are stacked on top of each other.

[0220] Figure 6C This is a cross-sectional view showing a partial structure of the light-emitting elements ED-a and ED-b in one or more embodiments. Figure 6C Only shown Figure 5B and Figure 5C Partial structure of the light-emitting elements ED-a and ED-b shown. Figure 6C It shows Figure 5B and Figure 5C The diagram shows a first n-type (class) charge generation layer n-CGL1, a first p-type (class) charge generation layer p-CGL1, a second hole transport auxiliary layer HTAL2, a first intermediate hole transport layer MHTL1, and a second emitter layer EML2, with the remaining layers omitted. In the following text, with reference to... Figure 6C When describing a light-emitting element according to one or more embodiments of the present disclosure, the same reference numerals will be assigned to the drawings herein. Figures 5A to 5D and Figure 6A The components will be described, but no detailed description will be provided.

[0221] Reference Figure 6C In one or more embodiments, the light-emitting element may include a second hole transport auxiliary layer HTAL2 adjacent to the first p-type charge generation layer p-CGL1. The second hole transport auxiliary layer HTAL2 may be arranged to contact the first p-type charge generation layer p-CGL1. In one or more embodiments, the second hole transport auxiliary layer HTAL2 may include a first amine compound and a first fluorine-containing compound, and the first p-type charge generation layer p-CGL1 may include a p-dopant, a second amine compound, and a second fluorine-containing compound.

[0222] The second amine compound and the second fluorinated compound can be configured to be phase-separated within the first p-type (or similar) charge-generating layer p-CGL1. The second amine compound and the second fluorinated compound can be disposed within the first p-type (or similar) charge-generating layer p-CGL1, while being phase-separated from each other in a direction orthogonal (e.g., perpendicular) to the third direction DR3.

[0223] The first p-type charge generation layer p-CGL1 may include a plurality of fifth portions CP1 and a plurality of sixth portions CP2, wherein the fifth portions CP1 include a p-dopant and a second amine compound, and the sixth portions CP2 include a second fluorine compound. In one or more embodiments, the plurality of fifth portions CP1 and the plurality of sixth portions CP2 may be arranged alternately in a direction orthogonal (e.g., perpendicular) to the thickness direction. In the first p-type charge generation layer p-CGL1, the fifth portions CP1 may be arranged between adjacent sixth portions CP2 in a direction orthogonal (e.g., perpendicular) to a third third direction DR3.

[0224] Each of the plurality of fifth portions CP1 and the plurality of sixth portions CP2 may have a shape extending on a third direction DR3, which is the thickness direction. In one or more embodiments, Figure 6C The first p-type (class) charge generation layer p-CGL1 is shown to include three fifth portions CP1 and four sixth portions CP2, but one or more embodiments of this disclosure are not limited thereto.

[0225] In the first p-type charge generation layer p-CGL1, multiple fifth portions CP1 comprising the second amine compound can correspond to the paths through which charge movement occurs. For example, in a light-emitting element, current can flow through the first p-type charge generation layer p-CGL1 along the third direction DR3, which is the thickness direction. In the first p-type charge generation layer p-CGL1, a sixth portion CP2 comprising the second fluorinated compound can exhibit insulating properties. Therefore, current flow in the first p-type charge generation layer p-CGL1 can be induced to be confined to the fifth portions CP1. The sixth portions CP2 are arranged between adjacent fifth portions CP1 in a direction orthogonal (e.g., perpendicular) to the thickness direction, thereby preventing or reducing lateral leakage current between adjacent pixels.

[0226] In one or more embodiments of the light-emitting element, the first p-type (class-of-charge) generation layer p-CGL1 may be formed as doped with p-doped material to obtain a relatively high charge mobility. When the first p-type (class-of-charge) generation layer p-CGL1 is formed as a common layer, it may act as a path for charge movement, resulting in lateral leakage current in which charge flows into a pixel through the first p-type (class-of-charge) generation layer p-CGL1 during the driving of another pixel. According to this disclosure, in a light-emitting element comprising multiple light-emitting stacks, in addition to including an amine compound and a fluorinated compound in the first p-type (class-of-charge) generation layer p-CGL1 doped with p-doped material, a hole transport auxiliary layer HTAL2 comprising a separate amine compound and a fluorinated compound is arranged adjacent to the first p-type (class-of-charge) generation layer p-CGL1 to prevent or reduce the occurrence of lateral leakage current.

[0227] In one or more embodiments, Figure 6B The foregoing description can be equivalently applied to items included in Figure 6C The second amine compound and the second fluorinated compound in the first p-type (class) charge-generating layer p-CGL1.

[0228] In one or more embodiments, a first p-type (or similar) charge-generating layer p-CGL1 can be formed using a vacuum deposition method. The first p-type (or similar) charge-generating layer p-CGL1 can be formed by parallel (e.g., simultaneous) deposition of an organic material comprising a p-dopant and a second amine compound with a second fluorinated compound. For example, the first p-type (or similar) charge-generating layer p-CGL1 can be formed by co-depositing an organic material comprising a p-dopant and a second amine compound with a second fluorinated compound on a substrate to be deposited. When the second fluorinated compound and the organic material containing the p-dopant and the second amine compound are co-deposited, the organic material and the second fluorinated compound can phase separate on the substrate to form a plurality of fifth portions CP1 and a plurality of sixth portions CP2.

[0229] To avoid impairing the light-emitting characteristics of the adjacent emitter layer EML2, the second hole transport auxiliary layer HTAL2 can be arranged separately from and / or spaced apart from the second emitter layer EML2 (e.g., spaced apart or separated) by a set or predetermined distance. For example, the upper surface of the second hole transport auxiliary layer HTAL2 may not be in contact with the lower surface of the second emitter layer EML2. In one or more embodiments, the second hole transport auxiliary layer HTAL2 can be arranged separately from and / or spaced apart from the second emitter layer EML2 (e.g., spaced apart or separated), and the first intermediate hole transport layer MHTL1 is placed between the second hole transport auxiliary layer HTAL2 and the second emitter layer EML2.

[0230] In one or more embodiments, the second hole transport assist layer HTAL2 may be arranged to be separated from and / or spaced apart (e.g., spaced apart or separated) from the second emitter layer EML2 by a second distance d2 relative to the thickness direction. The second distance d2 between the second hole transport assist layer HTAL2 and the second emitter layer EML2 may refer to the average distance from the upper surface of the second hole transport assist layer HTAL2 to the lower surface of the second emitter layer EML2. In one or more embodiments, the second distance d2 may be about 10 nm or greater. For example, the second distance d2 may be from about 10 nm to about 500 nm. When the second distance d2 is less than about 10 nm, the light emission characteristics of the second emitter layer EML2 may be degraded due to the second hole transport assist layer HTAL2, and therefore, the luminous efficiency and lifetime characteristics of the light-emitting element ED may be degraded.

[0231] The first portion AP1 of the second hole transport auxiliary layer HTAL2 and the fifth portion CP1 of the first p-type (class) charge generation layer p-CGL1 can be stacked on top of each other in a plane. The second portion AP2 of the second hole transport auxiliary layer HTAL2 and the sixth portion CP2 of the first p-type (class) charge generation layer p-CGL1 can be stacked on top of each other in a plane. In one or more embodiments, the first portion AP1 and the fifth portion CP1 can correspond to the path through which charge moves. In the light-emitting element of one or more embodiments, stable vertical current characteristics can be exhibited because the first portion AP1 of the second hole transport auxiliary layer HTAL2, comprising a first amine compound, and the fifth portion CP1 of the first p-type (class) charge generation layer p-CGL1, comprising a second amine compound, are stacked on top of each other. In some embodiments, in the light-emitting element of one or more embodiments, horizontal current flow can be effectively blocked because the second portion AP2 of the second hole transport auxiliary layer HTAL2, comprising a first fluorinated compound, and the sixth portion CP2 of the first p-type (class) charge generation layer p-CGL1, comprising a second fluorinated compound, are stacked on top of each other.

[0232] Display panel DP (see) Figure 4 The adjacent light-emitting elements ED-1, ED-2 and ED-3 in the ) (see Figure 4 They can operate independently. When a common layer exists among multiple light-emitting stacks, lateral leakage current may occur, where leakage current flows horizontally from one light-emitting element to an adjacent light-emitting element. Lateral leakage current may cause crosstalk in the light emission of adjacent pixels due to the lateral leakage current of the operating pixels, and this crosstalk may lead to degradation of the display panel and / or poor image quality. In one or more embodiments, to achieve a high-resolution display panel, the distance between pixels in the display panel may be reduced. However, the degradation caused by lateral leakage current through the common layer may worsen as the distance between pixels decreases.

[0233] According to this disclosure, in order to reduce lateral leakage current and associated degradation in light-emitting elements, the lateral leakage current can be minimized or reduced regardless of the increase in display panel resolution by forming a p-doped layer and a functional layer in contact with the p-doped layer, both comprising amine compounds and fluorine-containing compounds. This enables the realization of display panels with improved display quality and reliability. For example, one or more embodiments of this disclosure aim to reduce lateral leakage current and associated degradation in light-emitting elements. This is achieved by forming a p-doped layer that comprises both amine compounds and fluorine-containing compounds and a functional layer in contact with the p-doped layer. Even with increased display resolution, this method helps to minimize or reduce leakage current, resulting in display panels with improved quality and reliability.

[0234] Terms such as “basically,” “about,” and “approximately” are used as relative terms rather than terms of degree and are intended to explain the inherent deviations of measured or calculated values ​​that would be recognized by a person skilled in the art. They may include the stated value and an acceptable range of deviation determined by a person skilled in the art taking into account the limitations and errors associated with the measurement of that quantity. For example, “about” may refer to one or more standard deviations of the stated value or ±30%, ±20%, ±10%, ±5% of the stated value.

[0235] The numerical ranges disclosed herein include, and are intended to include, all subranges containing the same numerical precision. For example, the range “1.0 to 10.0” includes all subranges having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as 2.4 to 7.6. Therefore, the applicant reserves the right to amend this specification and the claims to expressly describe any subranges contained within the range expressly described herein.

[0236] In the following description, the results of evaluating the characteristics of the light-emitting elements of one or more embodiments will be described with reference to examples and comparative examples. In some embodiments, the more detailed examples are merely illustrative to aid in understanding the present disclosure, and the scope of the disclosure is not limited thereto.

[0237] Example

[0238] Manufacturing of light-emitting elements

[0239] Manufacturing of an example light-emitting element

[0240] A light-emitting element, as an example of a tandem light-emitting element, is manufactured by forming a first electrode on a glass substrate, sequentially forming a first light-emitting stack, a charge-generating layer, a second light-emitting stack, and a second electrode on the first electrode, and then forming a second electrode and a capping layer. Figure 5BThe structure of the light-emitting element shown is an example of a series-connected light-emitting element.

[0241] The first light-emitting stack is formed to include a hole transport region, a first emission layer, and an intermediate electron transport region. The second light-emitting stack is formed to include an intermediate hole transport region, a second emission layer, and an electron transport region. In the example light-emitting element, each of the first and second emission layers included in the first and second light-emitting stacks, respectively, is manufactured to have a single-layer structure.

[0242] A charge generation layer, comprising an n-type (or p-type) charge generation layer and a p-type (or p-type) charge generation layer, is disposed between stacked light-emitting components. The n-type (or p-type) charge generation layer is formed by doping 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) with Li. In the n-type (or p-type) charge generation layer, BCP and Li are provided in a weight ratio of approximately 95:5. The n-type (or p-type) charge generation layer is formed with a diameter of approximately 75 angstroms. The thickness is [not specified]. On the n-type charge generation layer, a p-type charge generation layer is formed from an organic material doped with 1% to 5% F4-TCNQ in a mixture in which α-NPD and CYTOP (e.g., a Cytop polymer) are mixed in a ratio of about 3:7 to about 5:5 (e.g., amount). The p-type charge generation layer is formed to have a thickness of approximately [not specified]. The thickness.

[0243] The hole transport region is formed by the following steps: depositing an organic material doped with 1% to 5% F4-TCNQ in a mixture of α-NPD and CYTOP (e.g., a Cytop polymer) in a ratio of about 3:7 to about 5:5 on a first electrode to form a region having approximately to approximately A hole injection layer of approximately [thickness missing] is formed; a mixture of α-NPD and CYTOP (e.g., CYTOP polymer) is deposited on the hole injection layer in a ratio (e.g., amount) of approximately 3:7 to approximately 5:5 to form a hole injection layer having approximately [thickness missing]. A first hole transport auxiliary layer of approximately [thickness missing]; and an α-NPD deposited on the first hole transport auxiliary layer to form a [thickness missing]... A hole transport layer of a certain thickness.

[0244] The intermediate hole transport region is created by the following steps: depositing a mixture of α-NPD and CYTOP (e.g., a Cytop polymer) in a ratio of about 3:7 to about 5:5 on a p-type (like) charge generation layer to form a region having approximately A second hole transport auxiliary layer of approximately [thickness missing]; and an α-NPD deposited on the second hole transport auxiliary layer to form a [thickness missing]... The thickness of the first intermediate hole transport layer.

[0245] The intermediate electron transport region is formed to include A thick first intermediate electron transport layer of 2,4,6-tris(biphenyl-3-yl)-1,3,5-triazine (T2T).

[0246] The electron transport region is formed to include Thick electron transport layer of 2,4,6-tris(biphenyl-3-yl)-1,3,5-triazine (T2T) and A thick electron-injected layer of 2,4,6-tris(3-(pyrimidin-5-yl)phenyl)-1,3,5-triazine (TPM-TAZ) was co-deposited by adding Liq. The electron-injected layer comprises TPM-TAZ and Liq in a weight ratio of approximately 5:5.

[0247] The first electrode is formed with an ITO / Ag / ITO structure, and the second electrode is formed with AgMg. Each layer of the luminescent structure is formed under vacuum conditions by a deposition method. A structure with approximately [missing information] is formed on the second electrode using P4. A capping layer of thickness, wherein P4 is N4,N4'-diphenyl-N4,N4'-bis(9-phenyl-9H-carbazole-3-yl)biphenyl-4,4'-diamine, and its structural formula is:

[0248]

[0249] Manufacturing of the light-emitting element in the comparison example

[0250] Except for omitting the steps (e.g., actions or tasks) of forming the first hole transport auxiliary layer and the second hole transport auxiliary layer, the light-emitting element of the comparative example is manufactured in substantially the same manner as the light-emitting element of the example. Except for omitting the first hole transport auxiliary layer and the second hole transport auxiliary layer, the light-emitting element of the comparative example corresponds to a light-emitting element having the same structure as the light-emitting element of the example.

[0251] Evaluation of light-emitting elements

[0252] Figure 7A and Figure 7B This is a graph showing the current density in the light-emitting element according to voltage (i.e., drive voltage) in the example and comparative examples. In the light-emitting element, voltage and current are measured using a Keithley device. In some embodiments, brightness is measured using an SR3 spectrometer. Figure 7C This is a graph showing the change in brightness over time in the light-emitting elements of the example and comparative examples. Figure 7A In this study, the current density based on the driving voltage was measured by applying a vertical current to the light-emitting element, and the results are shown. Figure 7B In this paper, the current density based on the driving voltage is measured by applying a horizontal current to the light-emitting element, and the results are shown. In this specification, the "vertical current" method refers to the method of applying current in a direction perpendicular to the thin film surface, and the "horizontal current" method refers to the method of applying current in a direction horizontal to the thin film surface. Figure 7A and Figure 7B In the graph, the unit of voltage is [V], and the unit of current density is [milliamperes per square centimeter (mA / cm²)]. 2 )).

[0253] Reference Figure 7A As can be seen, the example light-emitting element exhibits a current density similar to that of the comparative example. The fact that the example light-emitting element achieves a similar current density to the comparative example indicates that the example light-emitting element can maintain stability similar to that of the comparative example. (Refer to...) Figure 7B As can be seen, the current density of the comparative example's light-emitting element increases rapidly at a driving voltage of approximately 1.2V, but even with an increased driving voltage (e.g., when the driving voltage increases), the current density of the example's light-emitting element does not change significantly. Therefore, it can be seen that, compared to the comparative example's light-emitting element, the example's light-emitting element effectively blocks horizontal leakage current. Figure 7A and Figure 7B As can be seen, in the case of the example light-emitting element, horizontal current flow can be effectively blocked, and stable vertical current characteristics can be exhibited.

[0254] In some embodiments, refer to Figure 7C Generally, it can be observed that the degradation rate of the light-emitting element accelerates with increasing driving time, thus gradually reducing its brightness characteristics. For example, it can be seen that because the degradation of the light-emitting element progresses with driving time, the brightness gradually decreases from its initial value as the driving time increases. This can be seen from... Figure 7C It can be seen that the brightness reduction rate of the light-emitting element in the example is improved compared to that of the light-emitting element in the comparative example. Therefore, it can be expected that the display device including the light-emitting element in the example can display high-brightness images for a longer period of time compared to the light-emitting element in the comparative example.

[0255] According to one or more embodiments of this disclosure, hole transport materials (i.e., amine compounds) and fluorine-containing compounds are included in the hole injection layer or the p-type (or p-like) charge generation layer doped with p-dopersant and the adjacent functional layer, thereby minimizing or reducing leakage current between adjacent pixels. Therefore, the display efficiency and display lifespan of display panels including the light-emitting elements of this disclosure can be improved.

[0256] In other words, the provided graphs and curves show the performance of the light-emitting element in terms of current density and brightness over time. Figure 7A and Figure 7B The current density as a function of voltage is shown for both vertical and horizontal currents. Voltage and current were measured using a Keithley instrument, and brightness was measured using an SR3 spectrometer. The results show that when a vertical current is applied, the example light-emitting element maintains a stable current density similar to the comparative example. However, when a horizontal current is applied, the example shows a significantly smaller increase in current density at higher voltages, effectively blocking horizontal leakage current.

[0257] Figure 7C The brightness variation over time is shown, indicating that the example's light-emitting element has a slower rate of brightness decay compared to the comparative example. This suggests that the example can maintain high brightness over a longer period, thereby enhancing the performance of the display device. Including hole-transporting materials (i.e., amine compounds) and fluorine-containing compounds in specific layers helps minimize leakage current between adjacent pixels, thus improving the display efficiency and lifespan of the display panel.

[0258] The electronic device, display panel, means of manufacture thereof, and / or any other related means or components according to embodiments of the present disclosure described herein can be implemented using any suitable hardware, firmware (e.g., application-specific integrated circuit), software, or a combination of software, firmware, and hardware. For example, one or more suitable components of the electronic device and / or display panel may be formed on an integrated circuit (IC) chip or on separate IC chips. Furthermore, one or more suitable components of the electronic device and / or display panel may be implemented on a flexible printed circuit film, tape-on-a-carrier package (TCP), printed circuit board (PCB), or formed on a substrate. Additionally, one or more suitable components of the electronic device and / or display panel may be a process or thread executing computer program instructions and interacting with other system components to perform one or more suitable functions described herein, running on one or more processors in one or more computing devices. The computer program instructions are stored in memory, which may be implemented in a computing device using standard memory devices, such as random access memory (RAM). The computer program instructions may also be stored in other non-transitory computer-readable media, such as CD-ROMs, flash drives, etc. Furthermore, those skilled in the art will recognize that, without departing from the scope of the embodiments of this disclosure, the functions of one or more suitable computing devices may be combined or integrated into a single computing device, or the functions of a particular computing device may be distributed across one or more other computing devices.

[0259] In the context of this application and unless otherwise defined, the term “use” and its variations may be considered synonymous with the term “utilize” and its variations, respectively.

[0260] In view of the whole of this disclosure, those skilled in the art will understand that various suitable features of one or more suitable embodiments of this disclosure may be combined or integrated with each other in part or in whole, and may be technically interlocked and operated in one or more suitable ways, and that the various embodiments may be implemented independently or in combination with each other in any suitable way, unless otherwise stated or implied.

[0261] Although this disclosure has been described with reference to embodiments thereof, it will be understood that this disclosure is not intended to be limited to these embodiments, but rather that one or more suitable changes and modifications may be made by those skilled in the art without departing from the spirit and scope of this disclosure. Therefore, the technical scope of this disclosure is not intended to be limited to what is set forth in the detailed description of the specification, but is intended to be defined by the appended claims and their equivalents.

Claims

1. A light-emitting element, the light-emitting element comprising: First electrode; A hole injection layer is located on the first electrode; A first emitting layer is located on the hole injection layer and is configured to emit light of a first wavelength. A first n-type charge generation layer is located on the first emission layer; The first p-type charge generation layer is on the first n-type charge generation layer; A second emitting layer is formed on top of the first p-type charge generating layer and is configured to emit light of a second wavelength, which is different from the first wavelength. The electron transmission region is located on the second emission layer; The second electrode is located in the electron transport region; as well as A hole transport auxiliary layer, adjacent to at least one layer selected from the hole injection layer and the first p-type charge generation layer, and comprising a first amine compound and a first fluorine-containing compound. The at least one layer comprises a p-doper, a second amine compound, and a second fluorine-containing compound.

2. The light-emitting element according to claim 1, wherein, In the hole transport assist layer, the weight ratio of the first amine compound to the first fluorinated compound is 3:7 to 5:5, and In the at least one layer, the weight ratio of the second amine compound to the second fluorinated compound is 3:7 to 5:

5.

3. The light-emitting element according to claim 1, wherein, Both the first fluorinated compound and the second fluorinated compound independently include at least one of TEFLON and CYTOP.

4. The light-emitting element according to claim 1, wherein, The water contact angle of each of the first fluorinated compound and the second fluorinated compound is independently at least 110°.

5. The light-emitting element according to claim 1, wherein, The lowest unoccupied molecular orbital energy level of each of the first and second fluorinated compounds is independently at most 5.0 electron volts.

6. The light-emitting element according to claim 1, wherein, The hole transport auxiliary layer includes: Multiple first parts, including the first amine compound; and Multiple second parts, including the first fluorinated compound, and The plurality of first portions and the plurality of second portions are arranged alternately in a direction perpendicular to the thickness direction.

7. The light-emitting element according to claim 1, further comprising a hole transport layer on the hole injection layer, in, The hole transport auxiliary layer is located between the hole injection layer and the hole transport layer.

8. The light-emitting element according to claim 7, wherein, The hole transport auxiliary layer is spaced apart from the first emitter layer by a first distance in the thickness direction, and The first distance is at least 10 nanometers.

9. The light-emitting element according to claim 7, wherein, The hole transport auxiliary layer is directly on the hole injection layer, and The hole transport layer is directly on the hole transport auxiliary layer.

10. The light-emitting element according to claim 1, wherein, The hole transport auxiliary layer is located between the first p-type charge generation layer and the second emission layer.

11. The light-emitting element according to claim 10, wherein, The hole transport auxiliary layer is spaced a second distance from the second emitter layer in the thickness direction, and The second distance is at least 10 nm.

12. The light-emitting element according to claim 10, wherein, The hole transport auxiliary layer is directly on the first p-type charge generation layer.

13. The light-emitting element according to claim 10, further comprising an intermediate hole transport layer, the intermediate hole transport layer being located between the hole transport auxiliary layer and the second emitting layer and comprising a hole transport material.

14. The light-emitting element according to claim 1, wherein the light-emitting element further comprises an intermediate electron transport layer, the intermediate electron transport layer being located between the first emitting layer and the first n-type charge generating layer.

15. The light-emitting element according to claim 1, further comprising: A second n-type charge generation layer is located on the second emission layer; The second p-type charge generation layer is on the second n-type charge generation layer; as well as A third emitting layer is located on the second p-type charge generating layer and is configured to emit light of a third wavelength, which is different from the first and second wavelengths.

16. The light-emitting element according to claim 1, further comprising a capping layer on the second electrode, in, The capping layer has a refractive index of at least 1.

6.

17. An electronic device, the electronic device comprising: The substrate layer includes a non-display area and a display area, wherein the display area includes a first light-emitting area, a second light-emitting area, and a non-light-emitting area; as well as The display element layer is located on the substrate layer and includes a first light-emitting element superimposed on the first light-emitting region and a second light-emitting element superimposed on the second light-emitting region. Each of the first light-emitting element and the second light-emitting element includes: First electrode; A hole injection layer is located on the first electrode; A first emitting layer is located on the hole injection layer and is configured to emit light of a first wavelength. A first n-type charge generation layer is located on the first emission layer; The first p-type charge generation layer is on the first n-type charge generation layer; A second emitting layer is formed on top of the first p-type charge generating layer and is configured to emit light of a second wavelength, which is different from the first wavelength. The electron transmission region is located on the second emission layer; A second electrode is located in the electron transport region; and A hole transport auxiliary layer, adjacent to at least one layer selected from the hole injection layer and the first p-type charge generation layer, and comprising a first amine compound and a first fluorine-containing compound. The at least one layer comprises a p-doper, a second amine compound, and a second fluorine-containing compound.

18. The electronic device of claim 17, further comprising: Encapsulation layer, on the display element layer; as well as Multiple color filters are located on the encapsulation layer, and respectively in the first light-emitting region and the second light-emitting region.

19. The electronic device according to claim 17, wherein, The electronic device is a smartphone, television, monitor, tablet computer, electric vehicle, mobile phone, tablet PC, mobile communication terminal, electronic notebook, e-book, portable multimedia player, navigation device, ultra-mobile PC, laptop computer, billboard, Internet of Things device, smartwatch, watch phone, or head-mounted display.

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