A method of cleaning a silicon carbide growth apparatus

Abstract

The present application provides a cleaning method for silicon carbide growth equipment, which comprises the following steps: introducing an oxygen-free cleaning gas containing hydrogen and hydrogen fluoride into a growth chamber, and then introducing monosilane. After performing the step of alternately introducing the oxygen-free cleaning gas and monosilane at least once, the step of growing a silicon carbide layer is performed. The predetermined temperature in the growth chamber is not less than 1400 degrees Celsius, and the preset pressure higher than the growth pressure is controlled, which is conducive to improving the cleaning rate. Hydrogen plays a dilution role on the strong oxidizing hydrogen fluoride, while the cleaning efficiency is taken into account to prevent over-etching. The silicon species generated by the decomposition of monosilane can generate gaseous silicon tetrafluoride with fluorine and be adsorbed on the corrosion-resistant carbon-based surface, reducing the significant damage of hydrogen fluoride to the exposed corrosion-resistant carbon-based surface after cleaning. Finally, the step of growing a silicon carbide layer can fix the particles adsorbed on the exposed surface in the growth space which are not easy to be removed by blowing, and also provides a good growth environment for subsequent growth.

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