Integrated gas path system and semiconductor equipment

Abstract

An integrated gas path system and a semiconductor device, the integrated gas path system comprising: a gas mixing base comprising a first surface and a second surface arranged opposite to each other, and a side wall connecting the first surface and the second surface, a first gas path extending from the first surface to the second surface and a plurality of mutually independent second gas paths extending from the side wall to the gas mixing base are arranged in the gas mixing base, a gas outlet of the first gas path is located in one side of the second surface and used for being connected with a reaction chamber, and gas inlets of the second gas paths are distributed in the side wall at intervals and used for being connected with the reaction chamber; the air outlets of the plurality of second air paths are connected with the first air path; the first gas inlet pipeline is arranged on the first surface of the gas mixing base and is connected with a gas inlet of the first gas path; and the second gas inlet pipeline is arranged on the side wall of the gas mixing base and is connected with a gas inlet of the second gas path. According to the invention, high integration is realized, and the process efficiency is improved.

Description

TECHNICAL FIELD

[0001] Embodiments of the present disclosure relate to the field of semiconductor manufacturing, and in particular, to an integrated gas path system and semiconductor equipment. BACKGROUND

[0002] With the development of semiconductor-related technologies, the manufacturing process of semiconductor devices and chips is also rapidly developing.

[0003] In the field of semiconductor manufacturing, atomic layer deposition (ALD) process is a widely used deposition technology for depositing various functional materials on wafer surfaces. In the atomic layer deposition process, a plurality of process gases are usually sequentially introduced into the process chamber to achieve a specific atomic layer deposition reaction, thereby forming a desired thin film on the wafer surface. However, in the existing high-pressure process atomic layer deposition equipment, a large number of gases are introduced into the showerhead, and each gas needs a separate gas path and a buffer cylinder for stamping, which leads to complex pipeline arrangement and cumbersome space occupation problems. SUMMARY

[0004] The problem solved by embodiments of the present disclosure is to provide an integrated gas path system and semiconductor equipment, which is beneficial to realize high integration and improve process efficiency.

[0005] To solve the above problems, an integrated gas path system is provided, comprising: a gas mixing base comprising a first face and a second face arranged opposite to each other, and a side wall connecting the first face and the second face, the gas mixing base having a first gas path extending from the first face to the second face inside, and a plurality of second gas paths extending from the side wall to the gas mixing base and independent of each other, the gas outlet of the first gas path being located on the side of the second face and being used to connect with a reaction chamber, the gas inlets of the plurality of second gas paths being arranged on the side wall in intervals, and the gas outlets of the plurality of second gas paths being connected with the first gas path; a first gas inlet pipeline arranged on the first face of the gas mixing base and connected with the gas inlet of the first gas path; and a second gas inlet pipeline arranged on the side wall of the gas mixing base and connected with the gas inlets of the second gas paths.

[0006] Optionally, the gas mixing base is in the form of a flange plate, and the second gas paths are arranged in the spokes of the flange plate.

[0007] Optionally, the gas mixing base comprises one or both of the following cases: in the gas mixing base, the first gas path is located at the middle position of the gas mixing base; and in the gas mixing base, the plurality of second gas paths are uniformly distributed in the circumferential direction.

[0008] Optionally, the first air inlet pipe is welded to the air mixing base as an integral structure, or the first air inlet pipe is fixed to the air mixing base through detachable sealing.

[0009] Optionally, the first air inlet pipe and the second air inlet pipe are made of the same material as the air mixing base.

[0010] Optionally, the integrated gas path system further comprises a first heating structure arranged in the air mixing base below the second gas path.

[0011] Optionally, the integrated gas path system comprises a plurality of first heating structures, and each of the first heating structures is arranged below the second gas path one by one.

[0012] Optionally, the integrated gas path system further comprises a gas valve arranged on the air mixing base at the position of the second gas path and connected to the second gas path, and the gas valve and the gas outlet of the second gas path are less than a preset distance.

[0013] Optionally, the integrated gas path system further comprises a pressure accumulator arranged on the air mixing base at the position of the second gas path between the gas valve and the air inlet and connected to the second gas path, and at least one pressure accumulator is arranged on each second gas path.

[0014] Optionally, the pressure accumulator is made of the same material as the air mixing base.

[0015] Optionally, the pressure accumulator is welded to the air mixing base as an integral structure, or the pressure accumulator is fixed to the air mixing base through detachable sealing.

[0016] Optionally, the integrated gas path system further comprises a ring-shaped heating structure arranged on the air mixing base, and the pressure accumulator is arranged on the inner side and / or the outer side of the ring-shaped heating structure.

[0017] Optionally, the ring-shaped heating structure comprises a ring-shaped heat conduction ring and a second heating structure arranged in the ring-shaped heat conduction ring in a ring direction.

[0018] Optionally, the second heating structure is arranged on the path of the second gas path.

[0019] Correspondingly, the disclosure also provides a semiconductor device, comprising: a reaction chamber; and the integrated gas path system provided by the disclosure, wherein the gas outlet of the first gas path of the integrated gas path system is connected to the reaction chamber.

[0020] Compared with the prior art, the technical scheme of the embodiment of the present disclosure has the following advantages: In the integrated gas path system provided by the embodiment of the present disclosure, the gas mixing base has a first gas path extending from the first face to the second face, and a plurality of second gas paths extending from the side wall to the gas mixing base, the gas inlets of the plurality of second gas paths are arranged on the side wall in intervals, and the gas outlets of the plurality of second gas paths are all connected with the first gas path; in the embodiment of the present disclosure, the plurality of second gas paths are integrated in the same gas mixing base and communicated with the first gas path to realize gas mixing, which simplifies the number of pipelines of the second gas paths, reduces the layout difficulty of the second gas paths, is beneficial to reducing the occupied area of the integrated gas path system, saves a large amount of gas path space, realizes high integration, and moreover, the plurality of second gas paths are independently arranged and integrated in the gas mixing base without interference, which is beneficial to making the path from the gas inlet to the gas outlet of each second gas path shorter, thereby being beneficial to increasing the flow guide and improving the process efficiency. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 is a perspective structural schematic diagram of an embodiment of the integrated gas path system of the present disclosure; Figure 2 is a top view structural schematic diagram of an embodiment of the integrated gas path system of the present disclosure; Figure 3 is a bottom view structural schematic diagram of an embodiment of the integrated gas path system of the present disclosure; Figure 4 is a sectional view structural schematic diagram of an embodiment of the integrated gas path system of the present disclosure. DETAILED DESCRIPTION

[0022] As known from the background, the traditional gas path design is to connect one gas with one gas path pipeline and buffer steel cylinder, and finally collect on the gas mixing device to enter the gas nozzle. In order to ensure the consistency of the process results of each reaction chamber, the gas path line needs to be completely symmetrically arranged. In addition, the gas needs to be preheated before entering the reaction chamber, which means that the buffer steel cylinders need to be staggered at a long distance in order to install the heating device. These factors all lead to a large space occupation requirement, which affects the overall layout and efficiency of the equipment.

[0023] To solve the above technical problems, the embodiment of the present disclosure provides an integrated gas path system, comprising: a gas mixing base, comprising a first surface and a second surface arranged oppositely, and a side wall connecting the first surface and the second surface, the gas mixing base has a first gas path extending from the first surface to the second surface, and a plurality of second gas paths extending from the side wall to the gas mixing base, the gas outlet of the first gas path is located on the side of the second surface, and is used to be connected with a reaction chamber, the gas inlets of the plurality of second gas paths are arranged on the side wall in intervals, and the gas outlets of the plurality of second gas paths are all connected with the first gas path; a first gas inlet pipe is arranged on the first surface of the gas mixing base and is connected with the gas inlet of the first gas path; and a second gas inlet pipe is arranged on the side wall of the gas mixing base and is connected with the gas inlets of the second gas paths.

[0024] In the embodiment of the present disclosure, the plurality of second gas paths are integrated in the same gas mixing base and communicated with the first gas path to realize gas mixing, which simplifies the number of pipelines of the second gas paths, reduces the layout difficulty of the second gas paths, is beneficial to reducing the occupied area of the integrated gas path system, saves a large amount of gas path space, realizes high integration, and moreover, the plurality of second gas paths are arranged independently and integrated in the gas mixing base without interference, which is beneficial to making the path from the gas inlet to the gas outlet of each second gas path shorter, thereby being beneficial to increasing the flow guide and improving the process efficiency.

[0025] In order to make the above-mentioned purposes, features and advantages of the embodiment of the present disclosure more obvious and easy to understand, the specific embodiments of the present disclosure will be described in detail below with reference to the drawings.

[0026] Figure 1 is a perspective structural schematic diagram of an embodiment of the integrated gas path system of the present disclosure; Figure 2 is a top view structural schematic diagram of an embodiment of the integrated gas path system of the present disclosure; Figure 3 is a bottom view structural schematic diagram of an embodiment of the integrated gas path system of the present disclosure; Figure 4 is a sectional view structural schematic diagram of an embodiment of the integrated gas path system of the present disclosure Combined with reference Figures 1 to 4The integrated gas path system 10 comprises a gas mixing base 100, which comprises a first face 101 and a second face 102 arranged oppositely, and a side wall 103 connecting the first face 101 and the second face 102. The gas mixing base 100 has a first gas path 110 extending from the first face 101 to the second face 102, and a plurality of second gas paths 120 extending from the side wall 103 to the gas mixing base 100. The first gas path 110 has an outlet on the second face 102, and is configured to be connected to a reaction chamber. The plurality of second gas paths 120 have inlets arranged on the side wall 103, and the outlets of the plurality of second gas paths 120 are connected to the first gas path 110. The integrated gas path system 10 further comprises a first gas inlet pipe 210 arranged on the first face 101 of the gas mixing base 100 and connected to the inlet of the first gas path 110, and a second gas inlet pipe 220 arranged on the side wall 103 of the gas mixing base 100 and connected to the inlets of the second gas paths 120.

[0027] The gas mixing base 100 is configured to integrate a plurality of gas paths, and to transport gas and mix gas in the gas mixing base 100. The gas mixing base 100 is further configured to serve as a base for assembling gas path components to form the integrated gas path system 10.

[0028] In some embodiments, the gas mixing base 100 comprises the first face 101 and the second face 102 arranged oppositely, and the side wall 103 connecting the first face 101 and the second face 102. The first face 101 is configured to serve as an assembly face for components above the gas mixing base 100. The second face 102 is configured to serve as an assembly face for components below the gas mixing base 100. The side wall 103 is configured to serve as an assembly face for components on the side of the gas mixing base 100.

[0029] In some embodiments, the material of the gas mixing base 100 comprises one or more of stainless steel and hastelloy.

[0030] Both stainless steel and hastelloy have good corrosion resistance, which is conducive to improving the durability of the gas mixing base 100. In addition, both stainless steel and hastelloy are metal materials, which have good heat conductivity and are conducive to heat transfer in the gas mixing base 100.

[0031] As an example, in some embodiments, the material of the gas mixing base 100 is stainless steel 316LV or 316L.

[0032] The first gas path 110 is configured to transport gas. In addition, the first gas path 110 is configured to be connected to a reaction chamber to deliver mixed gas to the reaction chamber.

[0033] As an example, in some embodiments, the first gas path 110 extends in a direction perpendicular to the first face 101 of the gas mixing base 100.

[0034] Specifically, as shown in FIG. 1, the first gas path 110 extends in a direction perpendicular to the first face 101 of the gas mixing base 100. Figure 4As shown in the direction of A, the first gas path 110 is connected to the reaction chamber in the direction of A to deliver gas to the reaction chamber.

[0035] As an example, in some embodiments, the reaction chamber comprises an atomic layer deposition reaction chamber or a chemical vapor deposition reaction chamber.

[0036] The second gas path 120 is used for transmitting gas, and the second gas paths 120 are independently arranged, so that the second gas paths 120 independently transmit gas. The gas inlets of the plurality of second gas paths 120 are arranged on the side wall of the gas mixing base 100, and the gas outlets are all connected to the first gas path 110, so as to realize the plurality of second gas paths 120 that independently transmit gas from the edge to the middle of the gas mixing base 100, and at the same time, realize gas mixing in the first gas path 110 and delivery to the reaction chamber.

[0037] As an example, in some embodiments, the second gas path 120 extends in a direction parallel to the first face 101 of the gas mixing base 100.

[0038] In some embodiments, the plurality of second gas paths 120 are integrated in the same gas mixing base 100 and communicate with the first gas path 110 to realize gas mixing, which simplifies the number of pipelines of the second gas path 120, reduces the layout difficulty of the second gas path 120, is conducive to reducing the occupied area of the integrated gas path system 10, saves a large amount of gas path space, realizes high integration, and at the same time, the plurality of second gas paths 120 are independently arranged and integrated in the gas mixing base 100 without interference, which is conducive to making the path from the gas inlet to the gas outlet of each second gas path 120 short, thereby being conducive to increasing the flow guide and improving the process efficiency.

[0039] In some embodiments, the gas mixing base 100 is in the form of a flange plate, and the second gas paths 120 are arranged in the spokes 130 of the flange plate.

[0040] The gas mixing base 100 in the form of a flange plate is adopted, the path of the second gas path 120 is matched with the spoke 130 of the flange plate, so that the flange plate can match the paths of the first gas path 110 and the second gas path 120, and the integration of the plurality of second gas paths 120 is facilitated.

[0041] In other embodiments, the gas mixing base can be in the form of a circular disc or a square disc, and the specific appearance of the gas mixing base is not limited.

[0042] In some embodiments, in the gas mixing base 100, the first gas path 110 is located at the middle position of the gas mixing base 100.

[0043] The first gas path 110 is located in the middle of the gas mixing base 100, which is conducive to the gas mixing base 100 around the first gas path 110 to be provided with the second gas path 120, so that the second gas path 120 is easy to communicate with the first gas path 110, so as to realize the gas mixing at the position of the first gas path 110.

[0044] In some embodiments, in the gas mixing base 100, the plurality of second gas paths 120 are uniformly distributed in the circumferential direction.

[0045] The plurality of second gas paths 120 are uniformly distributed in the circumferential direction, which is conducive to the gas transmission path of each second gas path 120 being relatively short, improving the overall transmission efficiency of the plurality of second gas paths 120, and also conducive to each second gas path 120 being subjected to relatively uniform heat transfer.

[0046] The first gas inlet pipe 210 is used for transmitting gas to the first gas path 110.

[0047] As an example, in some embodiments, the first gas inlet pipe 210 is used for conveying process carrier gas.

[0048] The process carrier gas is used for carrying specific gas to the reaction chamber and also used for purifying the reaction chamber, and accordingly, the first gas inlet pipe 210 is always kept in a gas transmission state.

[0049] As an example, in some embodiments, the first gas inlet pipe 210 is used for conveying inert gas such as nitrogen and argon.

[0050] In some embodiments, the first gas inlet pipe 210 is detachably sealed and fixed to the gas mixing base 100.

[0051] The first gas inlet pipe 210 is detachable, so as to facilitate the replacement and maintenance of the first gas inlet pipe 210.

[0052] Specifically, in some embodiments, the first gas inlet pipe 210 can be in a C-shaped sealing ring (C seal), W-shaped sealing ring (W seal) or O-shaped ring (O ring) mode, and the vacuum sealing is realized by bolt locking.

[0053] In other embodiments, the first gas inlet pipe and the gas mixing base can also be welded into an integral structure, which is conducive to improving the sealing of the whole connection between the first gas inlet pipe and the gas mixing base.

[0054] In some embodiments, the material of the first gas inlet pipe 210 includes stainless steel, and as an example, the material of the first gas inlet pipe 210 is stainless steel 316LV or 316L.

[0055] In some embodiments, the inner wall of the first gas inlet pipe 210 is treated by electrolytic polishing (EP) to reduce surface roughness, reduce gas adsorption and particle emission, and meet high purity requirements.

[0056] The second gas inlet pipe 220 is used to transport gas to the second gas path 120.

[0057] As an example, in some embodiments, the second gas inlet pipe 220 is used to transport process-specific gas.

[0058] The process-specific gas is selected based on process requirements and is used to mix with the process carrier gas in the first gas path 110 and enter the reaction chamber with the process carrier gas to participate in the reaction.

[0059] In some embodiments, the second gas inlet pipe 220 is detachably sealed to the gas mixing base 100.

[0060] The second gas inlet pipe 220 is detachable to facilitate replacement and maintenance of the second gas inlet pipe 220.

[0061] Specifically, in some embodiments, the second gas inlet pipe 220 can be vacuum sealed with the gas mixing base 100 by a C-shaped sealing ring, a W-shaped sealing ring, or an O-ring through bolt locking.

[0062] In other embodiments, the second gas inlet pipe can also be welded to the gas mixing base to form an integral structure, which is beneficial to improve the sealing of the second gas inlet pipe and the gas mixing base.

[0063] In some embodiments, the material of the second gas inlet pipe 220 includes stainless steel, as an example, the material of the second gas inlet pipe 220 is stainless steel 316LV or 316L.

[0064] In some embodiments, the inner wall of the second gas inlet pipe 220 is treated by electrolytic polishing to reduce surface roughness, reduce gas adsorption and particle emission, and meet high purity requirements.

[0065] In some embodiments, the first gas inlet pipe 210, the second gas inlet pipe 220, and the gas mixing base 100 are made of the same material.

[0066] During gas transportation, the gas passes through the first gas inlet pipe 210, the second gas inlet pipe 220, and the gas mixing base 100, so the first gas inlet pipe 210, the second gas inlet pipe 220, and the gas mixing base 100 are made of the same material, which is beneficial to reduce the probability of impurities mixed in the gas and improve the purity of the gas.

[0067] It should be noted that in some embodiments, the first gas path 110 and the second gas path 120 are integrated in the gas mixing base 100, and the first gas inlet pipeline 210 and the second gas inlet pipeline 220 are designed to be compact and arranged in an orderly manner, which is conducive to improving the integration of pipeline design.

[0068] In some embodiments, the integrated gas path system 10 further comprises a first heating structure 710 arranged in the gas mixing base 100 below the second gas path 120.

[0069] Here, below refers to the side of the second gas path 120 facing the second surface 102.

[0070] The first heating structure 710 is used for heating the gas in the first gas path 110 and the second gas path 120, and the space above the second gas path 120 needs to be communicated with other parts. Therefore, the first heating structure 710 is arranged in the space of the gas mixing base 100 below the second gas path 120. The gas mixing base 100 is made of metal material, so the first heating structure 710 can conduct heat through the gas mixing base 100, which is easy to realize the internal structure design of the gas mixing base 100 and facilitate the assembly of parts.

[0071] In some embodiments, the integrated gas path system 10 comprises a plurality of first heating structures 710, and the plurality of first heating structures 710 are arranged one by one below the second gas path 120.

[0072] The plurality of first heating structures 710 are arranged one by one below the second gas path 120, which is conducive to achieving uniform and sufficient heating for each second gas path 120.

[0073] In other embodiments, the first heating structure can be arranged at any position of the gas mixing base below the second gas path, as long as the overall heating temperature of the gas mixing base is ensured, and the specific installation position of the first heating structure is not limited.

[0074] In some embodiments, the first heating structure 710 is a heating rod, which is easy to install and matches the path of the second gas path 120, and is easy to achieve uniform heating.

[0075] Specifically, in some embodiments, the power of the heating rod is 20W to 400W, and the temperature is controlled according to different process requirements.

[0076] Specifically, in some embodiments, the heating rod is installed on the gas mixing base 100 and can be locked and fixed on the surface of the gas mixing base 100 through a flange structure, or threaded holes can be machined on the gas mixing base 100, and a top screw (set screw) is used to fix the heating rod. The heating rod conducts heat through the metal material of the gas mixing base 100 to preheat the gas flowing through the first gas path 110 and the second gas path 120.

[0077] In some embodiments, the integrated gas path system 10 further comprises a first temperature controller (TC) 730 arranged in the gas mixing base 100.

[0078] The first temperature controller 730 is configured to feed back the temperature of the gas mixing base 100 in real time, and adjust the output power of the corresponding first heating structure 710 on the gas mixing base 100 in real time through a PID system, so as to stabilize the heating process of the gas in the first gas path 110 and the second gas path 120.

[0079] In some embodiments, the first temperature controller 730 is uniformly distributed in the circumferential direction of the gas mixing base 100, which is conducive to more comprehensive and overall temperature monitoring of the gas mixing base 100.

[0080] In some embodiments, the integrated gas path system 10 further comprises a pressure gauge 300 arranged on the side of the gas mixing base 100 and connected to the gas inlet of the second gas path 120.

[0081] The pressure gauge 300 is configured to monitor the pressure of the gas transmitted in the second gas path 120 to meet the process pressure requirement.

[0082] Specifically, in some embodiments, the pressure gauge 300 is arranged on the side of the second gas inlet pipe 220 away from the gas mixing base 100.

[0083] In some embodiments, the integrated gas path system 10 further comprises a gas valve 500 arranged on the gas mixing base 100 at the position of the second gas path 120 and connected to the second gas path 120, and the distance between the gas valve 500 and the gas outlet of the second gas path 120 is less than a preset distance.

[0084] The gas valve 500 is configured to control the opening and closing of the second gas path 120 for transmitting gas to the first gas path 110, and the distance between the gas valve 500 and the gas outlet of the second gas path 120 is less than a preset distance, i.e. the gas valve 500 is arranged close to the gas outlet of the second gas path 120, so as to ensure sufficient distance between the gas inlet of the second gas path 120 and the gas valve 500, which is conducive to providing sufficient space for pressure accumulation of the gas in the second gas path 120.

[0085] Specifically, in some embodiments, according to the actual process requirement of the reaction chamber, the gas valve 500 of the corresponding second gas path 120 participating in the reaction is opened, and the gas valve 500 of the second gas path 120 not needed to participate in the reaction is closed.

[0086] In some embodiments, the gas valve 500 can be sealed in a vacuum state by screw locking through a C-shaped sealing ring, a W-shaped sealing ring or an O-shaped ring with the gas mixing base 100.

[0087] In some embodiments, the integrated gas path system 10 further comprises: a pressure accumulator 400 arranged on the gas mixing base 100 at the position of the second gas path 120 between the gas valve 500 and the gas inlet, and in communication with the second gas path 120, and at least one pressure accumulator 400 is arranged on each second gas path 120.

[0088] The pressure accumulator 400 is used for energy storage and rapid pressure building. Specifically, the pressure accumulator 400 achieves pressure holding by storing gas, thereby achieving rapid stamping of the process cavity, which is beneficial to shorten the time required to reach the target pressure.

[0089] It should be noted that in some embodiments, by integrating all pressure accumulators 400 on the same gas mixing base 100, high integration is achieved, which not only simplifies the layout difficulty of the pressure accumulator 400, but also shortens the distance from the pressure accumulator 400 to the reaction chamber, which is beneficial to increase the flow conductance and improve the process efficiency.

[0090] As an example, in some embodiments, the pressure accumulator 400 comprises a buffer cylinder.

[0091] Using a buffer cylinder as a pressure accumulator 400 is beneficial to achieve rapid response, occupy a smaller volume, and has good safety.

[0092] In some embodiments, the pressure accumulator 400 is fixed to the gas mixing base 100 by a detachable seal.

[0093] The pressure accumulator 400 is detachable to facilitate replacement and maintenance of the pressure accumulator 400.

[0094] Specifically, in some embodiments, the pressure accumulator 400 can be sealed with the gas mixing base 100 by a C-shaped sealing ring, a W-shaped sealing ring or an O-shaped ring, and locked by a bolt to achieve vacuum sealing.

[0095] In other embodiments, the pressure accumulator and the gas mixing base can also be welded into an integrated structure, which is beneficial to improve the sealing of the whole structure connected by the pressure accumulator and the gas mixing base.

[0096] In some embodiments, the material of the pressure accumulator 400 comprises one or more of stainless steel and hastelloy.

[0097] Specifically, in some embodiments, the material of the pressure accumulator 400 is the same as that of the gas mixing base 100.

[0098] The material of the pressure accumulator 400 is the same as that of the gas mixing base 100, which is beneficial to reduce the probability of impurities mixed in the gas and improve the purity of the gas.

[0099] In some embodiments, the inner wall of the pressure accumulator 400 is subjected to electrolytic polishing treatment to reduce surface roughness, reduce gas adsorption and particle precipitation, and meet the high purity requirement.

[0100] It should be noted that the process-specific gas enters the second gas path 120 through the second gas inlet pipeline 220, the gas valve 500 is closed, the process-specific gas enters the pressure accumulator 400 through the second gas path 120, the inside of the pressure accumulator 400 is in a pressure holding state, and the pressure gauge 300 is connected to the second gas path 120 to monitor whether the gas pressure in the second gas path 120 meets the process requirements.

[0101] In some embodiments, the integrated gas path system 10 further comprises a ring-shaped heating structure 700 arranged on the gas mixing base 100, and the pressure accumulator 400 is arranged on the inside and / or outside of the ring-shaped heating structure 700.

[0102] The ring-shaped heating structure 700 is used to heat the space above the gas mixing base 100 to keep the environment at a certain temperature, and the pressure accumulator 400 is arranged on the inside and / or outside of the ring-shaped heating structure 700 so that the pressure accumulator 400 is in the heating environment of the ring-shaped heating structure 700.

[0103] Specifically, in specific embodiments, the pressure accumulator 400 can be arranged on the inside of the ring-shaped heating structure 700, or on the outside of the ring-shaped heating structure 700, or on the inside and outside of the ring-shaped heating structure 700, and the relative position of the pressure accumulator 400 and the ring-shaped heating structure 700 is not limited.

[0104] In some embodiments, the pressure accumulators 400 on the inside and outside of the ring-shaped heating structure 700 are symmetrically distributed on the path of any one of the second gas paths 120.

[0105] The pressure accumulators 400 on the inside and outside of the ring-shaped heating structure 700 are symmetrically distributed on the path of any one of the second gas paths 120, which is beneficial to uniformly heat the plurality of pressure accumulators 400.

[0106] In some embodiments, the ring-shaped heating structure 700 comprises a ring-shaped heat conduction ring 740 and a second heating structure 720 arranged in the ring-shaped heat conduction ring 740 in a ring direction.

[0107] The second heating structure 720 is used to heat the ring-shaped heat conduction ring 740 to uniformly heat the environment on the inside and outside of the ring-shaped heating structure 700 through the ring-shaped heat conduction ring 740.

[0108] In some embodiments, the second heating structure 720 is arranged on the path of the second gas path 120.

[0109] The pressure accumulator 400 is arranged on the path of the second gas path 120, and the second heating structure 720 is arranged on the path of the second gas path 120, which is beneficial to enhance the heating capacity of the second heating structure 720 on the pressure accumulator 400, thereby improving the heating effect on the pressure accumulator 400.

[0110] In some embodiments, the annular heating structure 700 includes a plurality of second heating structures 720, which are arranged one by one on the second gas path 120.

[0111] The plurality of second heating structures 720 are arranged one by one on the second gas path 120, which is beneficial to realize uniform and sufficient heating of the pressure accumulator 400 on each second gas path 120.

[0112] In other embodiments, the second heating structure can be arranged at any position of the annular heat conduction ring, as long as the overall heating temperature of the annular heat conduction ring is guaranteed, and the specific installation position of the second heating structure is not limited.

[0113] In some embodiments, the second heating structure 720 is a heating rod, which is easy to install and matches the topography of the pressure accumulator 400, and is easy to realize uniform heating.

[0114] Specifically, in some embodiments, the power of the heating rod is 20W to 400W, and the temperature is controlled according to different process requirements.

[0115] In some embodiments, the material of the annular heat conduction ring 740 is aluminum alloy, which has a high thermal conductivity, and is beneficial to make the temperature uniformity of the annular heat conduction ring 740 better after heating.

[0116] Specifically, in some embodiments, the heating rod is installed on the gas mixing base 100, and can be locked and fixed on the surface of the gas mixing base 100 through a flange structure, or threaded holes can be machined on the gas mixing base 100, and a jackscrew (set screw) is used to fix the heating rod. The heating rod conducts heat through the metal material of the annular heat conduction ring 740, realizes overall heating of the annular heating structure 700, and heats the environment around the annular heating structure 700.

[0117] In some embodiments, the integrated gas path system 10 further includes a second temperature controller 410 arranged on the pressure accumulator 400.

[0118] The second temperature controller 410 is used to feedback the temperature of the pressure accumulator 400 in real time, and adjust the output power of the corresponding second heating structure 720 on the annular heat conduction ring 740 in real time through a PID system, so as to stabilize the heating process of the pressure accumulator 400.

[0119] In some embodiments, the second temperature controller 410 is arranged on each pressure reservoir 400, which is conducive to more comprehensive and overall temperature monitoring of the pressure reservoir 400.

[0120] It should be noted that, for the sake of clear illustration, the second temperature controller 410 is only shown on one pressure reservoir 400 in the drawings.

[0121] Correspondingly, the disclosure also provides a semiconductor device.

[0122] In some embodiments, the semiconductor device comprises: a reaction chamber; and the integrated gas path system provided by the foregoing embodiments of the disclosure, wherein the outlet of the first gas path of the integrated gas path system is connected to the reaction chamber.

[0123] The reaction chamber is used to provide an operating space for processing a wafer.

[0124] Specifically, in some embodiments, the reaction chamber comprises a chemical vapor deposition process chamber or an atomic layer deposition process chamber.

[0125] Both the chemical vapor deposition process and the atomic layer deposition process require multiple gas paths to operate cooperatively to achieve process reaction, and therefore, the integrated gas path system provided by the foregoing embodiments of the disclosure is particularly suitable for a chemical vapor deposition process chamber or an atomic layer deposition process chamber.

[0126] In other embodiments, the reaction chamber can also comprise other types of deposition process chambers.

[0127] Specifically, in some embodiments, the plurality of second gas paths are integrated in the same gas mixing base and communicate with the first gas path to achieve gas mixing, which simplifies the number of pipelines of the second gas paths, reduces the layout difficulty of the second gas paths, is conducive to reducing the occupied area of the integrated gas path system, saves a large amount of gas path space, and achieves high integration, and moreover, the plurality of second gas paths are independently arranged and integrated in the gas mixing base without interference, which is conducive to making the path from the inlet to the outlet of each second gas path shorter, thereby being conducive to increasing the flow conductance and improving the process efficiency.

[0128] For specific description of the integrated gas path system, please refer to the detailed description of the foregoing embodiments, which will not be repeated herein.

[0129] Although the disclosure is disclosed as above, the disclosure is not limited thereto. Any person skilled in the art can make various modifications and changes without departing from the spirit and scope of the disclosure, and therefore, the protection scope of the disclosure should be subject to the scope defined by the claims.

Claims

1. An integrated airpath system, characterized by, The integrated gas path system comprises: a gas mixing base (100) comprising a first face (101) and a second face (102) arranged oppositely, and a side wall (103) connecting the first face (101) and the second face (102), the gas mixing base (100) having a first gas path (110) extending from the first face (101) to the second face (102), and a plurality of second gas paths (120) extending from the side wall (103) into the gas mixing base (100), the first gas path (110) having an outlet on the side of the second face (102) and being configured to be connected to a reaction chamber, and the plurality of second gas paths (120) having inlets arranged on the side wall (103) at intervals, and the plurality of second gas paths (120) having outlets connected to the first gas path (110); a first gas inlet pipe (210) arranged on the first face (101) of the gas mixing base (100) and connected to the inlet of the first gas path (110); a second gas inlet pipe (220) arranged on the side wall (103) of the gas mixing base (100) and connected to the inlet of the second gas path (120).

2. The integrated airpath system of claim 1, wherein, The gas mixing base (100) is in the form of a flange plate, and the second gas paths (120) are arranged in the spokes (130) of the flange plate.

3. The integrated airpath system of claim 1, wherein, The gas mixing base (100) comprises one or both of the following: In the gas mixing base (100), the first gas path (110) is located at the middle of the gas mixing base (100); In the gas mixing base (100), the plurality of second gas paths (120) are evenly distributed in the circumferential direction.

4. The integrated airpath system of claim 1, wherein, The first gas inlet pipe (210) is integrally welded with the gas mixing base (100), or the first gas inlet pipe (210) is detachably and sealingly fixed to the gas mixing base (100); The second gas inlet pipe (220) is integrally welded with the gas mixing base (100), or the second gas inlet pipe (220) is detachably and sealingly fixed to the gas mixing base (100).

5. The integrated airpath system of claim 1, wherein, The first gas inlet pipe (210) and the second gas inlet pipe (220) are made of the same material as the gas mixing base (100).

6. The integrated airpath system of claim 1, wherein, The integrated gas path system further comprises a first heating structure (710) arranged in the gas mixing base (100) below the second gas path (120).

7. The integrated airpath system of claim 6, wherein, The integrated gas path system comprises a plurality of first heating structures (710) arranged one by one below the second gas paths (120).

8. The integrated airpath system of claim 1, wherein, The integrated gas path system further comprises a gas valve (500) arranged on the gas mixing base (100) at the position of the second gas path (120) and connected to the second gas path (120), and the gas valve (500) is arranged at a distance less than a preset distance from the outlet of the second gas path (120).

9. The integrated airpath system of claim 8, wherein, The integrated gas path system further comprises a pressure accumulator (400) arranged on the gas mixing base (100) at a position of the second gas path (120) between the gas valve (500) and the gas inlet, and in communication with the second gas path (120), and at least one pressure accumulator (400) is arranged on each second gas path (120).

10. The integrated airpath system of claim 9, wherein, The pressure accumulator (400) is made of the same material as the gas mixing base (100).

11. The integrated airpath system of claim 9, wherein, The pressure accumulator (400) is welded to the gas mixing base (100) as an integral structure, or the pressure accumulator (400) is detachably sealed and fixed on the gas mixing base (100).

12. The integrated airpath system of claim 9, wherein, The integrated gas path system further comprises a ring-shaped heating structure (700) arranged on the gas mixing base (100), and the pressure accumulator (400) is arranged on the inner side and / or the outer side of the ring-shaped heating structure (700).

13. The integrated airpath system of claim 12, wherein, The ring-shaped heating structure (700) comprises a ring-shaped heat conduction ring (740) and a second heating structure (720) arranged in the ring-shaped heat conduction ring (740) at intervals in the ring direction.

14. The integrated airpath system of claim 13, wherein, The second heating structure (720) is arranged on the path of the second gas path (120).

15. A semiconductor device, characterized by comprising: It comprises: a reaction chamber; The integrated gas path system according to any one of claims 1-14, wherein the gas outlet of the first gas path of the integrated gas path system is connected to the reaction chamber.

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