Electro-optical modulator and use method and application thereof

Abstract

The invention discloses an electro-optical modulator and a use method and application thereof. The electro-optical modulator comprises an electrode, a high-refractive-index groove layer, an insulating medium layer, a refractive-index-adjustable layer and a reflector layer, a second face of the high-refractive-index groove layer is provided with a groove structure, the inclination angle of the side wall of the groove structure is 20-85 degrees, the refractive-index-adjustable layer and the reflector layer are sequentially arranged on the second face in a stacked mode, and the insulating medium layer is arranged on the second face of the high-refractive-index groove layer. The insulating medium layer is arranged between the second face and the adjustable refractive index layer in a stacked mode, or the insulating medium layer is arranged between the second face and the adjustable refractive index layer and between the adjustable refractive index layer and the reflector layer in a stacked mode, and the adjustable refractive index layer is mainly composed of transparent conductive oxide or transition metal nitride. The dielectric constant of the adjustable refractive index layer is continuously adjustable in a range from a negative value to a positive value by changing the carrier concentration of interface materials on the two sides of the insulating dielectric layer, a wavelength selective light trapping effect is generated near a near zero point of the dielectric constant, and the high-refractive-index groove layer can excite and enhance the light trapping effect.

Description

Technical Field

[0001] This invention relates in particular to an electro-optic modulator and its usage and application, belonging to the field of electro-optic modulator technology. Background Technology

[0002] Currently, fields such as wireless optical communication, quantum communication, optical computing, and imaging all have an urgent need for electro-optic modulators with high speed, wide operating bandwidth, and high modulation efficiency. Among existing electro-optic modulators, liquid crystal modulators have the advantage of high modulation depth, but they have high operating voltage and low modulation rate; lithium niobate modulators have the advantages of high speed and high modulation depth, but they are difficult to integrate into chips; polymer modulators have the characteristics of bandwidth and low cost, but they have poor reliability and are not easy to integrate; among semiconductor modulators, silicon photonic modulators have the advantages of mature technology, high speed, and low loss, but their modulation depth is insufficient.

[0003] To address the problems of existing electro-optic modulators, combining tunable novel electro-optic materials with artificial micro-nano structures is one of the important technical approaches to achieving high-performance electro-optic modulators that combine high speed, integrability, and broadband.

[0004] In 2016, Nano Letters, Vol. 9, No. 16, p. 5319, reported an electro-optic modulator combining indium tin oxide (ITO) with a metal / dielectric / metal metasurface. By adjusting the operating voltage to change the plasmonic resonance state of the structure, 30% amplitude modulation of the incident light was achieved, but the modulator's operating wavelength remained almost unchanged. In 2018, Optica, Vol. 7, No. 5, p. 787, reported an electro-optic modulator combining an ITO thin film with a high-refractive-index nanodisk. By adjusting the Whitgens resonance mode of the structure, 31% intensity modulation of the incident light was achieved, but the modulator's operating wavelength shifted by only 8.5 nm. In 2021, Nano Research, Vol. 8, No. 14, p. 2673, also reported an electro-optic modulator combining ITO with a metal / dielectric / metal metasurface. Utilizing the structure's magnetic resonance mode and vertical Fabry-Perot resonance, the operating wavelength was effectively increased to approximately 800 nm. In summary, while existing technologies, exemplified by the above examples, can achieve high speed and high integration to some extent, they struggle to achieve ultra-wide operating bandwidth, thus limiting further improvements in the overall performance of electro-optic modulators. Summary of the Invention

[0005] The main objective of this invention is to provide an electro-optic modulator and its usage and application, thereby overcoming the shortcomings of the prior art.

[0006] To achieve the aforementioned objectives, the technical solution adopted by this invention includes: A first aspect of the present invention provides an electro-optic modulator comprising: The device comprises an electrode, a high refractive index groove layer, at least one insulating dielectric layer, an adjustable refractive index layer, and a reflector layer. The high refractive index groove layer has a first side and a second side facing away from each other. The electrode is disposed on the first side, and the second side has at least one groove structure with a sidewall inclination angle of 20° to 85°. The adjustable refractive index layer and the reflector layer are sequentially stacked on the second side and have a contoured structure similar to the second side. The insulating dielectric layer is stacked between the second side and the adjustable refractive index layer, or the insulating dielectric layer is stacked between the second side and the adjustable refractive index layer, and between the adjustable refractive index layer and the reflector layer. The insulating dielectric layer has a contoured structure similar to the second side. The adjustable refractive index layer is mainly composed of transparent conductive oxide or transition metal nitride. When a working voltage is applied between the electrode and the mirror layer, or between the electrode, the tunable refractive layer, and the mirror layer, the carrier concentration of the interface material on both sides of the insulating dielectric layer changes. The dielectric constant of the tunable refractive index layer changes continuously from negative to positive values, and a wavelength-selective light-trapping effect is generated near the zero point of the dielectric constant. The high refractive index groove layer can excite and enhance the light-trapping effect of the tunable refractive index layer. Furthermore, by dynamically adjusting the wavelength corresponding to the near zero point of the dielectric constant of the tunable refractive index layer, the electro-optic modulator can achieve absorption in the spectral range of 1.0 μm to 4 μm.

[0007] Furthermore, a high-refractive-index groove layer with a groove structure can achieve a high modulation depth, as well as ensure the normal reflection of spatial incident light and the effective collection of reflected light.

[0008] Furthermore, the longitudinal cross-section of the groove structure is a triangular or trapezoidal structure. It should be noted that, preferably, the width of the groove structure gradually decreases towards the bottom of the groove.

[0009] Furthermore, the depth of the groove structure is 0.1μm to 50μm.

[0010] Furthermore, the second surface of the high-refractive-index groove layer is provided with multiple groove structures, which are arranged in parallel along the transverse direction to form a one-dimensional grating-like structure. It should be noted that the modulation effect of a single groove structure and multiple groove structures is similar, but multiple groove structures make optical path alignment easier and facilitate application. The multiple groove structures can be arranged adjacently or spaced apart, but the spaced areas do not have a modulation effect.

[0011] Furthermore, the high-refractive-index groove layer is made of a semiconductor semiconductor material.

[0012] Furthermore, the material of the high refractive index groove layer includes silicon, silicon material on an insulating substrate, gallium arsenide, or gallium nitride, etc.

[0013] Furthermore, the material of the insulating dielectric layer includes one or a combination of two or more of silicon oxide, aluminum oxide, hafnium oxide, and silicon nitride, but is not limited thereto.

[0014] Furthermore, the thickness of the insulating dielectric layer is uniform, and the thickness of the insulating dielectric layer is 3nm~30nm.

[0015] Furthermore, the material of the adjustable refractive index layer includes one or more combinations of indium tin oxide, aluminum-doped zinc oxide, chromium-doped aluminum oxide, and titanium nitride, but is not limited thereto.

[0016] Furthermore, the thickness of the adjustable refractive index layer is 5nm~50nm.

[0017] Furthermore, the electrodes and the reflective mirror layer are made of metallic or metal-like materials.

[0018] Furthermore, the metallic material includes, but is not limited to, an alloy formed from one or more of gold, silver, copper, aluminum, titanium, nickel, and chromium.

[0019] Furthermore, the metal-like material includes any one or a combination of two or more of titanium nitride, zirconium nitride, and graphene, but is not limited thereto.

[0020] Furthermore, the materials of the electrodes and the reflective mirror layer include a thickness of 0.02μm to 0.3μm.

[0021] A second aspect of the present invention provides a method of using an electro-optic modulator, comprising: Provide the electro-optic modulator, An operating voltage (i.e., gate voltage) is applied between the electrode and the mirror layer, wherein the operating voltage is -20V to 20V.

[0022] A second aspect of the present invention provides the use of the electro-optic modulator in the fields of optical communication, optical sensing or laser processing.

[0023] Compared with the prior art, the advantages of the present invention include: (1) The material system used in the electro-optic modulator provided in the embodiments of the present invention is compatible with the existing CMOS technology, making it easier to integrate with other devices; (2) The electro-optic modulator provided in the embodiments of the present invention adopts electro-optic modulation of a non-resonant system. The operating wavelength of the device is no longer affected by the structural parameters, but only by the electron concentration of the tunable material, which can broaden the operating bandwidth. (3) The electro-optic modulator provided in this embodiment of the invention uses a groove with a high refractive index, which can better enhance the light trapping effect of the tunable refractive index layer material and improve the modulation effect of the electro-optic modulator. Attached Figure Description

[0024] To better illustrate the content of this invention, the embodiments are briefly described below with reference to the accompanying drawings. The drawings are schematic diagrams of idealized embodiments of the invention. For clarity, the thickness of layers and regions has been enlarged, but these are schematic diagrams and should not be considered as strictly reflecting the proportional relationships of geometric dimensions. The embodiments shown in the invention should not be considered limited to the specific shapes of the regions shown in the figures. The representations in the figures are illustrative and should not be considered as limiting the scope of the invention.

[0025] Figure 1a , Figure 1b This is a schematic diagram of an electro-optic modulator based on a high-refractive-index grooved mirror provided in a typical embodiment of the present invention; Figure 2 This is a graph showing the change in dielectric constant of an adjustable refractive index layer as a function of electron concentration. Figure 3 This is the absorption spectrum of the electro-optic modulator in Comparative Example 1 under the condition of applying a certain voltage, showing the change in the incident light angle. Figure 4 This is the absorption spectrum of the electro-optic modulator in Comparative Example 1 when the incident light angle changes without applied voltage; Figure 5 This is a comparison of the absorption spectra of the electro-optic modulator in Comparative Example 1 when the incident light angle is 70° in the on / off state. Figure 6a In Embodiment 1 of this invention, the electron concentration of the tunable refractive index layer is 1.0 × 10⁻⁶. 20 cm -3 Absorption spectra of the electro-optic modulator under different applied voltages; Figure 6b In Embodiment 1 of this invention, the electron concentration of the tunable refractive index layer is 1.0 × 10⁻⁶. 20 cm -3 Modulation depth map of electro-optic modulator under different applied voltages; Figure 7a , Figure 7b These are the dielectric constants of indium tin oxide tunable refractive index layers obtained by growing in different atmospheres; Figure 8a , Figure 8b and Figure 8c These are the dielectric constants of indium tin oxide tunable refractive index layers obtained by growing at different growth temperatures; Figure 9a , Figure 9bThese are the dielectric constants of the indium tin oxide tunable refractive index layers obtained by using different sputtering powers during the growth process; Figure 10 In Embodiment 1 of this invention, the electron concentration of the tunable refractive index layer is 1.0 × 10⁻⁶. 19 cm -3 Normalized absorption spectra of the electro-optic modulator under different applied voltages; Figure 11 This is an absorption spectrum of an electro-optic modulator under different applied voltages according to Embodiment 2 of the present invention; Figure 12 This is an electric field distribution diagram of an electro-optic modulator in Embodiment 1 of the present invention under no applied voltage; Figure 13 This is an electric field distribution diagram of an electro-optic modulator under applied voltage according to Embodiment 1 of the present invention; Figure 14 This is a normalized absorption spectrum of an electro-optic modulator under different applied voltages, as shown in Embodiment 3 of the present invention. Figure 15 This is a schematic diagram of the structure of a dual-gate controlled electro-optic modulator according to Embodiment 4 of the present invention; Figure 16 This is the absorption spectrum of a dual-gate controlled electro-optic modulator under different combined voltages in Embodiment 4 of the present invention. Detailed Implementation

[0026] In view of the shortcomings of the prior art, the inventors of this invention, through long-term research and extensive practice, have proposed the technical solution of this invention. The following will further explain and illustrate the technical solution, its implementation process, and its principles in conjunction with the accompanying drawings and specific embodiments.

[0027] This invention combines a tunable refractive index material (transparent conductive oxide or transition metal nitride) with a groove structure of a high refractive index groove layer with a certain tilt angle, forming a non-resonant electro-optic modulator of a high refractive index semiconductor / dielectric / electro-optic material / metal stack or a high refractive index semiconductor / dielectric / electro-optic material / dielectric / metal stack. The dielectric constant of the tunable refractive index material can be continuously adjusted within a negative to positive range by controlling the electron concentration of the material, particularly achieving a near-zero dielectric constant. This near-zero dielectric constant exhibits a strong light-trapping effect under certain conditions. This invention employs a high refractive index groove structure with a certain tilt angle, which can effectively excite and enhance the light-trapping effect and enhance the multiple interactions between the incident light and the tunable refractive index material, achieving strong light absorption in the modulator. Applying different gate voltages between the metal electrode and the metal mirror layer, or between the electrode, the tunable refractive layer, and the mirror layer, can regulate the accumulation and depletion of electrons on both sides of the insulating dielectric layer, causing the wavelength corresponding to the near-zero dielectric constant of the tunable refractive index layer to shift, thereby achieving electro-absorption-type optical modulation with wavelength variation.

[0028] The non-resonant structure system of the electro-optic modulator provided in this embodiment of the invention has an operating wavelength that depends only on the electron concentration in the accumulation layer of the tunable refractive index material. By controlling the growth of the tunable refractive index material and adjusting the gate voltage of the device, the operating wavelength of the electro-optic modulator can be moved from 1000nm to 4000nm, realizing ultra-wide operating band optical modulation and helping to achieve device miniaturization.

[0029] This invention provides an electro-optic modulator that can adjust the intensity of light absorption by optimizing the tilt angle of the sidewalls of the groove structure in the high-refractive-index groove layer. Furthermore, the peak wavelength of light absorption in the electro-optic modulator is mainly determined by the electron concentration of its tunable refractive index layer; by changing the operating voltage of the electro-optic modulator, the wavelength of the absorption peak can be shifted.

[0030] The present invention will be further described in detail below with reference to the embodiments and accompanying drawings, but the embodiments of the present invention are not limited thereto.

[0031] Example 1 Please see Figure 1a or Figure 1b ( Figure 1a , Figure 1bThe main difference between the devices shown is the different etching angles, which result in different depths and maximum widths of the groove structure. An electro-optic modulator includes an electrode 5, a high-refractive-index groove layer 4, a first insulating dielectric layer 3, an adjustable refractive-index layer 2, and a reflector layer 1. The high-refractive-index groove layer 4, the first insulating dielectric layer 3, the adjustable refractive-index layer 2, and the reflector layer 1 are stacked sequentially along the longitudinal direction. The electrode 5 is located on the back side of the high-refractive-index groove layer 4, facing away from the first insulating dielectric layer 3. The reflector layer 1 serves as another electrode. By applying a voltage between the two electrodes, the incident light 6 can be modulated.

[0032] In this embodiment, the high refractive index groove layer 4 has a first side and a second side facing away from each other. The electrode 5 is disposed on the first side, and the second side has a plurality of groove structures arranged sequentially in the transverse direction. The first insulating dielectric layer 3 is conformally disposed on the second side of the high refractive index groove layer 4 and forms a contoured structure similar to the second side. The adjustable refractive index layer 2 and the reflector layer 1 are sequentially stacked on the first insulating dielectric layer 3 and form a contoured structure similar to the high refractive index groove layer 4.

[0033] In this embodiment, the high-refractive-index groove layer 4 is made of silicon material, with a thickness of 100 μm. The longitudinal cross-section of the groove structure of the high-refractive-index groove layer 4 is triangular, and the inclination angle α of the sidewall of the groove structure is 45°, the depth is 4 μm, and the lateral width is 8 μm. The first insulating dielectric layer 3 is a 10 nm thick hafnium dioxide thin film, the adjustable refractive index layer 2 is a 10 nm thick indium tin oxide thin film, the reflector layer 1 is a 200 nm thick gold film, and the electrode 5 is a gold electrode.

[0034] In this embodiment, the dielectric constant of indium tin oxide, used as an electro-optic material, can vary with the electron concentration, such as... Figure 2 As shown, light absorption is generated in the near-zero dielectric constant range. When the intrinsic electron concentration of the tunable refractive index layer 2 is 1.0 × 10⁻⁶,… 20 cm -3 When different voltages are applied, the absorption spectrum of the electro-optic modulator in this embodiment changes as follows: Figure 6a As shown, the modulation depth varies under different applied voltages. Figure 6b As shown, this demonstrates that the electro-optic modulator can operate in a wide wavelength range from 1000nm to 4000nm. Figure 7a , Figure 7b The dielectric constants of indium tin oxide tunable refractive index layers grown under different atmospheres are shown. Figure 8a , Figure 8b and Figure 8c The dielectric constants of indium tin oxide tunable refractive index layers obtained at different growth temperatures are shown. Figure 9a , Figure 9bThe dielectric constants of indium tin oxide tunable refractive index layers obtained using different sputtering powers during the growth process are shown. When the intrinsic electron concentration of tunable refractive index layer 2 is 1.0 × 10⁻⁶, the dielectric constant is... 19 cm -3 When different voltages are applied, the absorption spectrum of the electro-optic modulator in this embodiment changes as follows: Figure 10 As shown.

[0035] Depend on Figure 6a - Figure 9b It can be learned that the dielectric constant of the tunable refractive index layer can be controlled through various growth conditions, thereby allowing for the adjustment of the device's operating wavelength. Figure 10 It can be understood that by fixing the electron concentration (intrinsic carrier concentration) of the tunable refractive index layer and then applying a voltage to change the carrier concentration at the interface, the operating band of the device can be controlled.

[0036] Without applied voltage, the electric field distribution of the electro-optic modulator in this embodiment is as follows: Figure 12 As shown, under the applied voltage, the electric field distribution of the electro-optic modulator in this embodiment is as follows: Figure 13 As shown, it can be seen that when a voltage is applied, a strong light-matter interaction occurs at the interface between the adjustable refractive index layer 2 and the insulating dielectric layer 3.

[0037] Example 2 Please see Figure 1a The structure of the electro-optic modulator in this embodiment is basically the same as that in Embodiment 1, and the similarities will not be described again here. The difference from Embodiment 1 is that the adjustable refractive index layer 2 in this embodiment is an aluminum-doped zinc oxide layer (specifically, a doping concentration of 3.0 × 10⁻⁶). 20 cm -3 Under different applied voltages, the absorption spectrum of the electro-optic modulator in this embodiment changes as follows: Figure 11 As shown.

[0038] Example 3 Please see Figure 1a The structure of the electro-optic modulator in this embodiment is basically the same as that in Embodiment 1, and the similarities will not be repeated here. In this embodiment, the inclination angle α of the sidewall of the groove structure is 54.7°. In this embodiment, the normalized absorption spectra of the electro-optic modulator under different applied voltages are as follows: Figure 14 As shown, by Figure 14 It can be seen that the electro-optic modulator can operate in a wide wavelength range from 1000nm to 4000nm.

[0039] Comparative Example 1 The structure of an electro-optic modulator in Comparative Example 1 is basically the same as that in Example 1. The similarities between the two will not be repeated here. The difference is that Comparative Example 1 uses a flat silicon material layer instead of a high refractive index groove layer 4.

[0040] When an appropriate voltage is applied and the incident angle of incident light 6 changes, the absorption spectrum of the electro-optic modulator in Comparative Example 1 changes as follows: Figure 3 As shown, the absorption wavelength of light is mainly related to the near-zero dielectric constant corresponding to the electron concentration at the interface between the tunable refractive index layer 2 and the first insulating dielectric layer 3, and the larger the incident light angle, the stronger the light absorption; while when no voltage is applied to the electro-optic modulator, the absorption spectrum of the electro-optic modulator changes with the incident light 6 as follows: Figure 4 As shown, when the incident angle of incident light 6 is 70°, the absorption spectrum of the electro-optic modulator under no applied voltage condition is as follows: Figure 5 As shown.

[0041] Example 4 Please see Figure 15 The structure of the electro-optic modulator in this embodiment is basically the same as that in Embodiment 1, except that the electro-optic modulator in this embodiment has two insulating dielectric layers. Specifically, the electro-optic modulator includes an electrode 5, a high refractive index groove layer 4, a first insulating dielectric layer 3, an adjustable refractive index layer 2, a second insulating dielectric layer 8, and a reflector layer 1. The first insulating dielectric layer 3, the adjustable refractive index layer 2, the second insulating dielectric layer 8, and the reflector layer 1 are stacked longitudinally on the second surface of the high refractive index groove layer 4. The electrode 5 is disposed on the first surface of the high refractive index groove layer 4. The reflector layer 1 serves as another electrode, and the adjustable refractive index layer 2 serves as a shared third electrode. By applying a voltage between the three electrodes, the incident light 6 can be modulated. The first insulating dielectric layer 3 and the second insulating dielectric layer 8 have the same thickness and material. The absorption spectrum of the electro-optic modulator in this embodiment under different combined voltages is as follows: Figure 16 As shown.

[0042] The electro-optic modulator in this embodiment can achieve dual-gate modulation and dual-peak modulation, which is beneficial for expanding the operating band.

[0043] It should be noted that, with reference to Embodiments 1-4, the inclination angle of the sidewall of the groove structure was set to 20°, 25°, 28°, 33°, 40°, 49°, 55°, 63°, 70°, 72°, 80°, and 85°, and a series of embodiments were obtained. The devices of the embodiments were tested and verified, and the results were basically consistent with the test results of Embodiments 1, 2, and 4.

[0044] This invention alters the carrier concentration at the interface between the electrodes and the metal mirror layer, or between the electrodes, the tunable refractive index layer, and the metal mirror layer, by controlling the operating voltage between them. Specifically, it allows for continuous adjustment of the dielectric constant of the tunable refractive index layer within a negative to positive range, generating a wavelength-selective light-trapping effect near the zero point of the dielectric constant. Simultaneously, the high-refractive-index groove layer employs a groove structure design with a specific tilt angle, effectively exciting and enhancing the light-trapping effect of the tunable refractive index layer and strengthening the interaction between the incident light and the tunable refractive index layer, achieving efficient absorption of the incident light. By dynamically adjusting the wavelength corresponding to the near-zero dielectric constant of the tunable refractive index layer, absorption of the electro-optic modulator is achieved in the spectral range of 1.0 μm to 4 μm. This electro-optic modulator, provided by this invention, overcomes the bandwidth limitations of modulators and has significant application value in fields such as optical communication systems, high-speed electro-optic switches, and miniature spectrometers.

[0045] The embodiments disclosed in this invention are one or more preferred embodiments. Any local changes or modifications that originate from the technical concept of this invention and are easily deduced by those skilled in the art do not depart from the scope of the patent rights of this invention. The given embodiments all operate in the near-infrared band, but can be extended to the visible light and mid-infrared bands.

[0046] It should be understood that the above embodiments are merely illustrative of the technical concept and features of the present invention, and are intended to enable those skilled in the art to understand the content of the present invention and implement it accordingly. They should not be construed as limiting the scope of protection of the present invention. All equivalent changes or modifications made in accordance with the spirit and essence of the present invention should be covered within the scope of protection of the present invention.

Claims

1. An electro-optic modulator, characterized by The electrode, the high-refractive groove layer, at least one insulating medium layer, the adjustable refractive index layer and the mirror layer, the high-refractive groove layer has a first face and a second face, the electrode is arranged on the first face, the second face has at least one groove structure, the inclination angle of the sidewall of the groove structure is 20°-85°, the adjustable refractive index layer and the mirror layer are arranged on the second face in sequence and have similar profile structures with the second face, the insulating medium layer is arranged between the second face and the adjustable refractive index layer, or the insulating medium layer is arranged between the second face and the adjustable refractive index layer and between the adjustable refractive index layer and the mirror layer, the insulating medium layer has similar profile structures with the second face, and the adjustable refractive index layer is mainly composed of transparent conductive oxide or transition metal nitride; When a working voltage is applied between the electrode and the mirror layer or between the electrode, the adjustable refractive index layer and the mirror layer, the carrier concentration of the interface material on both sides of the insulating medium layer changes, the dielectric constant of the adjustable refractive index layer continuously changes in the range from negative to positive, and the wavelength-selective light trapping effect is generated near the dielectric constant near zero point, the high-refractive groove layer can excite and enhance the light trapping effect of the adjustable refractive index layer, and by dynamically adjusting the wavelength corresponding to the dielectric constant near zero point of the adjustable refractive index layer, the absorption of the electro-optical modulator in the wavelength range of 1.0 μm-4 μm can be realized. The longitudinal section of the groove structure is a triangular or trapezoidal structure.

2. The electro-optic modulator of claim 1, wherein: The depth of the groove structure is 0.1 μm-50 μm.

3. The electro-optic modulator of claim 1 or 2, wherein: The second face of the high-refractive groove layer is provided with a plurality of groove structures, the plurality of groove structures are arranged in sequence and in parallel along the transverse direction, and form a one-dimensional grating-like structure.

4. The electro-optic modulator of claim 1 or 2, wherein: The material of the high-refractive groove layer is a semiconductor material; preferably, the material of the high-refractive groove layer includes silicon, silicon material on an insulating substrate, gallium arsenide or gallium nitride.

5. The electro-optic modulator of claim 1, wherein: The material of the insulating medium layer includes one or a combination of two or more of silicon oxide, aluminum oxide, hafnium oxide and silicon nitride; 6. The electro-optic modulator of claim 1, wherein: Preferably, the thickness of the insulating medium layer is uniform, and the thickness of the insulating medium layer is 3 nm-30 nm. The material of the adjustable refractive index layer includes one or a combination of two or more of indium tin oxide, aluminum-doped zinc oxide, chromium-doped aluminum oxide and titanium nitride.

7. The electro-optic modulator of claim 1, wherein: Preferably, the thickness of the adjustable refractive index layer is 5 nm-50 nm. The material of the electrode and the mirror layer is a metal material or a metalloid material; 8. The electro-optic modulator of claim 1, wherein: Preferably, the metal material includes one or an alloy formed by two or more of gold, silver, copper, aluminum, titanium, nickel and chromium; Preferably, the metalloid material includes any one or a combination of two or more of titanium nitride, zirconium nitride and graphene; Preferably, the material of the electrode and the mirror layer includes a thickness of 0.02 μm-0.3 μm. The electro-optical modulator in any one of claims 1-8 is provided, 9. A method of using an electro-optic modulator, the method comprising: A working voltage is applied between the electrode and the mirror layer, and the working voltage is-20 V-20 V.

10. The use of the electro-optical modulator in any one of claims 1-8 in the field of optical communication, optical sensing or laser processing. ​ ​

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