Temperature drift processing method and device, electronic equipment and storage medium

Abstract

The embodiment of the invention discloses a temperature drift processing method and device, electronic equipment and a storage medium. The method is applied to the electronic equipment, the electronic equipment comprises a touch screen, the method comprises the steps that a first capacitance difference value and a second capacitance difference value of each capacitance node in the touch screen are obtained, the first capacitance difference value is the capacitance difference value of each capacitance node at the current moment, and the second capacitance difference value is the capacitance difference value of each capacitance node at the current moment; the second capacitance difference value is the capacitance difference value of each capacitance node at the starting point moment; determining a target node from capacitance nodes included in the touch screen, wherein the target node is a capacitance node of a non-finger touch area; and when the temperature of the electronic equipment is greater than a preset temperature, determining a target temperature drift statistical value of the target node based on the first capacitance difference value and the second capacitance difference value of the target node. According to the method, the amplitude limiting processing is performed on the temperature drift statistical value of the target node, so that the touch experience is effectively improved.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of terminals, and particularly relates to a temperature drift processing method and device, an electronic device and a storage medium. BACKGROUND

[0002] With the development of science and technology, electronic devices are more and more widely used, and have more and more functions, and have become one of necessities in people's daily life. At present, electronic devices are generally provided with touch screens. When a user's finger touches the touch screen, the finger conduction and sliding friction will cause temperature changes in the touch area, thereby causing detection influences on the touch screen. SUMMARY

[0003] In view of the above problems, the application provides a temperature drift processing method and device, an electronic device and a storage medium to improve the above problems.

[0004] In a first aspect, an embodiment of the application provides a temperature drift processing method applied to an electronic device, the electronic device comprising a touch screen, and the method comprises: acquiring a first capacitance difference value and a second capacitance difference value of each capacitance node in the touch screen, the first capacitance difference value being a capacitance difference value of each capacitance node at a current time, and the second capacitance difference value being a capacitance difference value of each capacitance node at a starting time; determining a target node from the capacitance nodes comprised in the touch screen, the target node being a capacitance node in a non-finger touch area; and when a temperature of the electronic device is greater than a preset temperature, determining a target temperature drift statistical value of the target node based on the first capacitance difference value and the second capacitance difference value of the target node.

[0005] In a second aspect, an embodiment of the application provides a temperature drift processing device running in an electronic device, the electronic device comprising a touch screen, and the device comprises: an acquisition unit configured to acquire a first capacitance difference value and a second capacitance difference value of each capacitance node in the touch screen, the first capacitance difference value being a capacitance difference value of each capacitance node at a current time, and the second capacitance difference value being a capacitance difference value of each capacitance node at a starting time; a first determination unit configured to determine a target node from the capacitance nodes comprised in the touch screen, the target node being a capacitance node in a non-finger touch area; and a second determination unit configured to, when a temperature of the electronic device is greater than a preset temperature, determine a target temperature drift statistical value of the target node based on the first capacitance difference value and the second capacitance difference value of the target node.

[0006] In a third aspect, an embodiment of the application provides an electronic device comprising one or more processors and a memory; one or more programs, wherein the one or more programs are stored in the memory and configured to be executed by the one or more processors, and the one or more programs are configured to execute the above method.

[0007] In a fourth aspect, an embodiment of the present application provides a computer readable storage medium, wherein the computer readable storage medium stores program codes, and the program codes perform the method described above when the program codes are run.

[0008] In a fifth aspect, an embodiment of the present application provides a computer program product, comprising computer programs / instructions, and the computer programs / instructions implement the steps of the method described above when executed by a processor.

[0009] The embodiment of the present application provides a temperature drift processing method and device, electronic equipment and a storage medium. First, a first capacitance difference value and a second capacitance difference value of each capacitance node in a touch screen are acquired, the first capacitance difference value is a capacitance difference value of each capacitance node at a current moment, and the second capacitance difference value is a capacitance difference value of each capacitance node at a starting moment. Then, a target node is determined from the capacitance nodes included in the touch screen, the target node is a capacitance node in a non-finger touch area, and when the temperature of the electronic equipment is greater than a preset temperature, a target temperature drift statistical value of the target node is determined based on the first capacitance difference value and the second capacitance difference value of the target node. Through the above method, the target temperature drift statistical value of the target node can be limited and processed, and the touch experience can be effectively improved. BRIEF DESCRIPTION OF DRAWINGS

[0010] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative effort.

[0011] Figure 1 A flow chart of a temperature drift processing method according to an embodiment of the present application is shown; Figure 2 A schematic diagram of the capacitance nodes included in the touch screen in an embodiment of the present application is shown; Figure 3 A flow chart of a temperature drift processing method according to another embodiment of the present application is shown; Figure 4 A flow chart of a temperature drift processing method according to still another embodiment of the present application is shown; Figure 5 A structural block diagram of a temperature drift processing device according to an embodiment of the present application is shown; Figure 6 A structural block diagram of an electronic device for executing the temperature drift processing method according to an embodiment of the present application in the present application is shown; Figure 7The storage unit for storing or carrying program code for implementing the temperature drift processing method according to the embodiments of the present application is shown in the present application. DETAILED DESCRIPTION

[0012] The technical solutions in the embodiments of the present application will be clearly and completely described in combination with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative labor fall within the protection scope of the present application.

[0013] With the development of science and technology, electronic devices are more and more widely used, and have more and more functions, and have become one of the necessities in people's daily life. At present, electronic devices are generally provided with touch screens. When a user's finger performs a touch operation on the touch screen, the finger conduction and sliding friction will cause temperature changes of the touch area, thereby causing detection influences on the touch screen.

[0014] Therefore, the inventors propose the temperature drift processing method, device, electronic device and storage medium in the present application. First, a first capacitance difference value and a second capacitance difference value of each capacitance node in the touch screen are acquired, the first capacitance difference value is a capacitance difference value of each capacitance node at a current time, and the second capacitance difference value is a capacitance difference value of each capacitance node at a starting time. Then, a target node is determined from the capacitance nodes included in the touch screen, the target node is a capacitance node of a non-finger touch area. When the temperature of the electronic device is greater than a preset temperature, a target temperature drift statistical value of the target node is determined based on the first capacitance difference value and the second capacitance difference value of the target node. Through the above method, the target temperature drift statistical value of the target node can be limited and processed, thereby effectively improving the touch experience.

[0015] The embodiments of the present application will be specifically described below in combination with the drawings.

[0016] Please refer to Figure 1 The temperature drift processing method provided in the embodiments of the present application is applied to an electronic device including a touch screen, and the method includes the following steps. Step S110: A first capacitance difference value and a second capacitance difference value of each capacitance node in the touch screen are acquired, the first capacitance difference value is a capacitance difference value of each capacitance node at a current time, and the second capacitance difference value is a capacitance difference value of each capacitance node at a starting time.

[0017] In the embodiments of the present application, the electronic device can include a touch screen, and the touch screen can include a plurality of capacitive nodes. The capacitive nodes of the touch screen refer to a plurality of nodes divided on a sensing layer of the capacitive touch screen, and the capacitive nodes form a complete capacitive network through a connecting circuit. When a finger or other conductive object touches the capacitive touch screen, a capacitance is formed between the finger or other conductive object and the capacitive nodes. By measuring the change in the capacitance, the position and shape of the finger or other conductive object on the touch screen can be determined. For example, Figure 2 FIG. 1 shows a typical capacitive touch screen with a double-layer structure, which includes m channels in the X direction and n channels in the Y direction. The intersection of the channels in the X direction and the Y direction is the capacitive node of the touch screen. Because of the insulating medium in the middle, a capacitive structure is formed at the node. Figure 2 Figure 2 In the figure, 101 represents a normal node, and 102 represents an abnormal node.

[0018] It can be understood that when a finger or other conductive object with constant temperature and heat is performing a touch operation on the capacitive node or within a period of time after the touch operation is performed on the capacitive node, the temperature of the capacitive node will change slowly, that is, the temperature of the capacitive node will change slowly to the ambient temperature. Alternatively, the temperature change can include temperature rise or temperature drop, which is not limited herein. Alternatively, the touch operation can include a pressing operation, a sliding operation, a clicking operation, and the like, which is not limited herein.

[0019] In the embodiments, for each capacitive node in the plurality of capacitive nodes included in the touch screen, the original mutual capacitance parameter of the capacitive node, that is, the original value of the capacitive node, can be extracted. Alternatively, the original mutual capacitance parameter can refer to the mutual capacitance parameter before temperature drift compensation. As an implementable manner, the original mutual capacitance parameter of the capacitive node can be extracted through a function of acquiring mutual capacitance parameters provided by a driver of the touch screen of the electronic device. For example, the original mutual capacitance parameter of the capacitive node can be extracted by calling an application programming interface (API) of the touch screen driver of the Android device.

[0020] In some embodiments, the original mutual capacitance parameter of the capacitive node can be extracted in real time, at a preset time interval, at a preset time point, or according to other preset conditions, which is not limited herein.

[0021] ​In the embodiments of the present application, the first capacitance difference and the second capacitance difference are both the difference between the original value and the reference value of the capacitance node. However, the first capacitance difference is the difference between the original value and the reference value of each capacitance node at the current time, and the second capacitance difference is the difference between the original value and the reference value of each capacitance node at the starting time. The starting time is the temperature drift starting time, and the time is counted from this time. The original value of the capacitance node can be the capacitance value of the current node, and the original value of the capacitance node at different times can be different. For example, the original value of the capacitance node can be the capacitance value when the capacitance node is touched, and the greater the touch force, the smaller the original value of the capacitance node. The reference value of the capacitance node can be a reference capacitance value of the capacitance node, and the reference value of the capacitance node is usually a fixed value, which can be changed by updating. For example, the reference value of the capacitance node can be the capacitance value when the capacitance node is not touched. For example, the value of a certain capacitance node when not touched is 10000, the original value is 10000, the reference value is 10000, and after the finger is touched, the original value is 9600, and the reference value remains unchanged. It should be noted that the original value of the capacitance node is usually less than the reference value of the capacitance node.

[0022] As a way, in response to a data acquisition instruction, the first capacitance difference and the second capacitance difference of each capacitance node in the touch screen are acquired. The data acquisition instruction can be an instruction triggered by a specified operation on the electronic device, or the data acquisition instruction can be an instruction sent by another electronic device that has established a communication connection with the electronic device, which is not limited here.

[0023] Step S120: determining a target node from the capacitance nodes included in the touch screen, the target node being a capacitance node in a non-finger touch area.

[0024] In the embodiments of the present application, the target node is a capacitance node in a non-finger touch area included in the touch screen, and the target node can include at least one capacitance node in a non-finger touch area. The non-finger touch area is a touch area composed of capacitance nodes that are not touched by fingers.

[0025] Specifically, first, the finger touch area is marked, and the capacitive nodes with finger touch are marked as the corresponding area serial number, and the capacitive nodes without finger touch are marked as 0. The full-screen finger touch area node mark is initialized. Then, the last frame finger touch state (the last frame is the touch data frame obtained at the previous time, because the current frame has not been searched, so the information of the last frame is used) is polled. The polling is mainly performed on the last frame 10 record buffer (why is it 10 record buffer, because the maximum support is 10 points, so there are 10 record finger information buffers). If the finger touch state is not a touch event and is not a touch-up event, the corresponding finger area node is marked as a finger touch mark. Otherwise, it is marked as a finger touch mark. When marking, each node in the finger area is traversed, and different finger areas are marked as different values. For example, if there are three finger areas, including finger area 1, finger area 2 and finger area 3, the capacitive nodes in the finger area 1 are marked as 1, the capacitive nodes in the finger area 2 are marked as 2, and the capacitive nodes in the finger area 3 are marked as 3. The capacitive nodes not in the above finger areas are marked as 0.

[0026] Therefore, the target node obtained in the present application can be a capacitive node marked as 0 in the touch screen. Each time a frame of touch data frame is obtained, all capacitive nodes in the touch screen can be marked in the above manner to distinguish capacitive nodes in the finger touch area and capacitive nodes in the non-finger touch area.

[0027] Optionally, in the embodiment of the present application, before determining the target node, it can also be judged whether the time counting and accumulation is greater than 100ms (100ms can be understood as a set temperature drift statistical period). If it is greater, it is determined whether the current node is a finger touch area, that is, the target node is determined. Specifically, there is a timer TimeSum that starts counting from the starting time. TimeSum will accumulate the time consumption of the corresponding frame every frame. For example, if the frame interval is 8ms, then TimeSum will accumulate 8ms every frame. Here, a time counter is maintained to distinguish the starting point and the ending point of 100ms.

[0028] Step S130: When the temperature of the electronic device is greater than a preset temperature, a target temperature drift statistical value of the target node is determined based on the first capacitive difference value and the second capacitive difference value of the target node.

[0029] In the embodiment of the present application, the preset temperature is a minimum temperature set in advance to trigger the entry into the high temperature detection process. For example, the preset temperature can be set to 28 degrees.

[0030] When the first and second capacitance difference values of each capacitive node in the touch screen are acquired, the current temperature of the electronic device can be acquired by the temperature sensor arranged in the electronic device. After the current temperature of the electronic device is acquired, the temperature can be compared with the preset temperature to determine whether to perform the subsequent steps. Specifically, if the temperature is greater than the preset temperature, it is determined to perform the subsequent steps, that is, to enter the high-temperature detection process. Otherwise, if the temperature is less than or equal to the preset temperature, it is determined not to perform the subsequent steps, that is, to exit the high-temperature detection process. The temperature value of the electronic device can be acquired by the temperature sensor arranged in the electronic device.

[0031] When it is detected that the temperature of the electronic device is greater than the preset temperature, the target temperature drift statistical value of each target node is calculated based on the first and second capacitance difference values of each target node. The target temperature drift statistical value is the value after the temperature drift statistical value is limited. The temperature drift statistical value is the value after the temperature drift is limited. The temperature drift can be understood as the change amount of the capacitance difference value with the change of the temperature.

[0032] The temperature drift of each target node can be calculated based on the first and second capacitance difference values of each target node, and then the temperature drift statistical value of each target node can be determined based on the size of the temperature drift, and finally the target temperature drift statistical value of each target node can be obtained by limiting the temperature drift statistical value of each target node.

[0033] The temperature drift processing method provided in the application first acquires the first and second capacitance difference values of each capacitive node in the touch screen. The first capacitance difference value is the capacitance difference value of each capacitive node at the current time, and the second capacitance difference value is the capacitance difference value of each capacitive node at the starting time. Then, the target node is determined from the capacitive nodes included in the touch screen. The target node is the capacitive node in the non-finger touch area. When the temperature of the electronic device is greater than the preset temperature, the target temperature drift statistical value of the target node is determined based on the first and second capacitance difference values of the target node. Through the above method, the temperature drift statistical value of the target node can be limited, and the touch experience can be effectively improved.

[0034] Please refer to Figure 3 The temperature drift processing method provided in the embodiment of the application is applied to an electronic device, and the electronic device includes a touch screen. The method includes the following steps. Step S210: Acquire the first and second capacitance difference values of each capacitive node in the touch screen. The first capacitance difference value is the capacitance difference value of each capacitive node at the current time, and the second capacitance difference value is the capacitance difference value of each capacitive node at the starting time.

[0035] Step S220: determining a target node from the capacitive nodes included in the touch screen, the target node being a capacitive node of a non-finger touch area.

[0036] Step S230: when the temperature of the electronic device is greater than a preset temperature, determining a temperature drift amount of the target node based on the first and second capacitive difference values of the target node, the temperature drift amount being a change amount of the capacitive difference value of the target node caused by temperature change.

[0037] In the embodiments of the present application, for each capacitive node of the plurality of capacitive nodes included in the touch screen, the corresponding temperature drift amount of the capacitive node in the process of temperature change can be extracted. Optionally, the temperature drift amount can be a change amount of the mutual capacitance parameter of the capacitive node caused by temperature change. As an implementable manner, the change amount of the mutual capacitance parameter of the capacitive node can be extracted through a function of obtaining the mutual capacitance parameter provided by the driver program of the touch screen of the electronic device, for example, the change amount of the mutual capacitance parameter of the capacitive node can be extracted by calling the touch screen driver program interface (API) of the Android device, and the temperature drift amount is determined based on the change amount of the mutual capacitance parameter.

[0038] In some embodiments, the corresponding temperature drift amount of the capacitive node in the process of temperature change can be extracted in real time, the corresponding temperature drift amount of the capacitive node in the process of temperature change can be extracted at a preset time interval, the corresponding temperature drift amount of the capacitive node in the process of temperature change can be extracted at a preset time point, or the corresponding temperature drift amount of the capacitive node in the process of temperature change can be extracted according to other preset conditions, etc., which are not limited herein.

[0039] In some embodiments, the mutual capacitance parameter can include a mutual capacitance raw value or a mutual capacitance difference value. Wherein, the essence of the temperature drift amount is the cumulative amount of the raw value changing with temperature change, because the base value is almost unchanged in most cases, so this change can be synchronized to the diff (diff = base-raw), therefore, the temperature drift amount can be a change amount of the diff of the capacitive node caused by temperature change, or the temperature drift amount can also be a change amount of the raw of the capacitive node caused by temperature change. It can be understood that when the temperature drift amount is a change amount of the diff of the capacitive node caused by temperature change, then the original mutual capacitance parameter can be the original diff; when the temperature drift amount is a change amount of the raw of the capacitive node caused by temperature change, then the original mutual capacitance parameter can be the original raw.

[0040] In the embodiments of the present application, the temperature drift amount is a change amount of the diff of the capacitive node caused by temperature. Wherein, the temperature drift amount of each target node is a difference between the first and second capacitive difference values of each target node.

[0041] Step S240: determining a temperature drift statistical value of the target node based on the temperature drift amount of the target node, the temperature drift statistical value being a value obtained by limiting the temperature drift amount.

[0042] In the embodiments of the present application, after the temperature drift amount of each target node is calculated, the temperature drift statistical value of each target node can be determined based on the temperature drift amount of each target node.

[0043] As a manner, the determining the temperature drift statistical value of the target node based on the temperature drift amount of the target node comprises: if the absolute value of the temperature drift amount of the target node is less than a first threshold, taking the temperature drift amount of the target node as the temperature drift statistical value of the target node; or if the temperature drift amount of the target node is greater than the first threshold, determining the temperature drift statistical value of the target node based on the first threshold and the temperature drift amount of the target node.

[0044] The first threshold is a minimum temperature drift amount representing that the temperature drift statistical value is too large, which is set in advance, for example, the first threshold can be set to 40. After the temperature drift amount of each target node is calculated, the absolute value of the temperature drift amount of each target node can be compared with the first threshold in turn, if the absolute value of the temperature drift amount of a target node is less than the first threshold, the temperature drift amount of the target node can be taken as the temperature drift statistical value of the target node. For example, if the absolute value of the temperature drift amount of a target node is less than 40, the temperature drift amount of the target node can be taken as the temperature drift statistical value of the target node.

[0045] If the temperature drift amount of a target node is greater than the first threshold, the temperature drift statistical value of the target node = the temperature drift amount of the target node + the first threshold. For example, if the temperature drift amount of a target node is greater than 40, the temperature drift statistical value of the target node = the temperature drift amount of the target node + 40.

[0046] As another manner, if the temperature drift amount of the target node is less than a second threshold, the temperature drift statistical value of the target node is determined based on the second threshold and the temperature drift amount of the target node, the first threshold and the second threshold being thresholds with opposite signs but same absolute value.

[0047] In the embodiments of the present application, if the temperature drift amount of a target node is less than the second threshold, the temperature drift statistical value of the target node = the temperature drift amount of the target node + the second threshold. Since the first threshold and the second threshold are thresholds with opposite signs but same absolute value, in the case that the first threshold is set to 40, the second threshold can be set to -40. In this case, if the temperature drift amount of a target node is less than -40, the temperature drift statistical value of the target node = the temperature drift amount of the target node + (-40).

[0048] Step S250: determining a target temperature drift statistical value of the target node based on the temperature drift statistical value of the target node, the target temperature drift statistical value being a value obtained by limiting the temperature drift statistical value.

[0049] In the embodiments of the present application, after the temperature drift statistical value of each target node is calculated by the foregoing manner, the target temperature drift statistical value of each target node can be determined based on the temperature drift statistical value of each target node.

[0050] As a manner, the determining the target temperature drift statistical value of the target node based on the temperature drift statistical value of the target node comprises: if the temperature drift statistical value of the target node is greater than the first capacitance difference value, determining the first capacitance difference value as the target temperature drift statistical value of the target node; or if the temperature drift statistical value of the target node is less than 0, determining the target temperature drift statistical value of the target node as 0; or if the temperature drift statistical value of the target node is greater than a preset value, determining the target temperature drift statistical value of the target node as the preset value, the preset value being greater than 0.

[0051] In the embodiments of the present application, the preset value is a temperature drift statistical value that is pre-set to represent an excessively large temperature drift statistical value, for example, the preset value can be set as 180.

[0052] After the temperature drift statistical value of each target node is determined based on the foregoing manner, the size of the temperature drift statistical value of each target node and the corresponding first capacitance difference value can be further judged, and then the target temperature drift statistical value of each target node is determined. Specifically, if the temperature drift statistical value of a target node is greater than the corresponding first capacitance difference value, the first capacitance difference value is assigned to the temperature drift statistical value of the capacitance node as the target temperature drift statistical value of the capacitance node; if the temperature drift statistical value of the target node is not greater than the corresponding first capacitance difference value, it is continued to be judged whether the temperature drift statistical value of the target node is less than 0; if the temperature drift statistical value of the target node is less than 0, the temperature drift statistical value of the target node is forcibly assigned as 0, that is, the target temperature drift statistical value of the target node can be determined as 0; if the temperature drift statistical value of the target node is not less than 0, it is continued to be judged whether the temperature drift statistical value of the target node is greater than 180; if the temperature drift statistical value of the target node is greater than 180, the temperature drift statistical value of the target node is forcibly limited as 180 to avoid an excessively large temperature drift statistical value; the foregoing flow operation is repeated to process each target node to determine the target temperature drift statistical value of each target node.

[0053] As another way, the target node includes a plurality of capacitive nodes, and the determining the target temperature drift statistical value of the target node based on the temperature drift statistical value of the target node includes: obtaining a temperature drift statistical value of a neighbor node of a specified node, the specified node being a capacitive node in the target node located at a specified position of the touch screen; and determining the target temperature drift statistical value of the specified node based on the temperature drift statistical value of the neighbor node.

[0054] In the embodiments of the present application, the capacitive node located at the specified position of the touch screen can be a capacitive node with the least accurate temperature drift statistical value in the target node included in the touch screen, for example, the capacitive node located at the specified position of the touch screen can be a capacitive node located at the upper right corner of the touch screen. The neighbor node can be a capacitive node adjacent to the specified node in the horizontal direction and the vertical direction. When determining the target temperature drift statistical value of the specified node, the sum of the temperature drift statistical values of the neighbor nodes of the specified node can be taken as the target temperature drift statistical value of the specified node.

[0055] After the target temperature drift statistical value of each target node is determined, the cumulative overflow of the timer is maintained, and whether the timer TimeSum starting from the start time is greater than 100 ms? If greater than 100 ms, the timer TimeSum is cleared, and the capacitance difference value of each capacitive node in the current frame is taken as the 100 ms interval start difference value.

[0056] After that, the high temperature mode can be assigned as the high temperature detection mode.

[0057] The temperature drift processing method provided by the present application first obtains the first capacitance difference value and the second capacitance difference value of each capacitive node in the touch screen, determines the target node from the capacitive nodes included in the touch screen, and then when the temperature of the electronic device is greater than the preset temperature, determines the temperature drift of the target node based on the first capacitance difference value and the second capacitance difference value of the target node, determines the temperature drift statistical value of the target node based on the temperature drift of the target node, and finally determines the target temperature drift statistical value of the target node based on the temperature drift statistical value of the target node. Through the above method, the target temperature drift statistical value of the target node can be limited and processed, and the touch experience can be effectively improved.

[0058] Please refer to Figure 4 The temperature drift processing method provided by the embodiments of the present application is applied to an electronic device including a touch screen, and the method includes: Step S310: obtaining the first capacitance difference value and the second capacitance difference value of each capacitive node in the touch screen, the first capacitance difference value being the capacitance difference value of each capacitive node at the current time, and the second capacitance difference value being the capacitance difference value of each capacitive node at the start time.

[0059] Step S320: determining a target node from the capacitive nodes included in the touch screen, the target node being a capacitive node of a non-finger touch area.

[0060] Step S330: when the electronic device is in a preset game mode and the temperature of the electronic device is greater than a preset temperature, determining a target temperature drift statistical value of the target node based on the first capacitive difference value and the second capacitive difference value of the target node.

[0061] As a manner, when the electronic device is in a preset game mode and the temperature of the electronic device is greater than a preset temperature, if it is determined that the touch area of the touch screen is less than a preset area based on the first capacitive difference value of each capacitive node, the target temperature drift statistical value of the target node is determined based on the first capacitive difference value and the second capacitive difference value of the target node.

[0062] In the embodiment of the present application, the preset game mode is a game mode that can trigger the entering of the high-temperature detection process, and the game mode represents that the electronic device is currently running a game. The embodiment of the present application mainly performs targeted optimization measures for the game scene. If the electronic device is currently in the game mode, the subsequent logical judgment can be continued, that is, the high-temperature detection process is entered.

[0063] The electronic device being in the game mode is detected by the system terminal that the user enters the game application and issues a notification to the touch module. Then, it is determined whether the current temperature value of the electronic device is greater than a preset temperature. If it is not greater, the high-temperature detection process is directly exited. If it is greater than or equal to the preset temperature, the subsequent process is continued.

[0064] In the case that the temperature of the electronic device is greater than or equal to the preset temperature, it can be further determined whether the current frame is in a large-area suppression state. If it is in the large-area suppression state, the high-temperature detection process is not performed. This is mainly to prevent the change of the capacitance value caused by the non-temperature influence such as the palm pressing or large-area foreign matter pressing from being counted into the capacitance temperature drift. The large-area suppression state can be understood as that the palm large-area touch is suppressed to report points, that is, the touch area of the touch screen is greater than or equal to a preset area. The preset area is a touch area that represents a relatively large touch area of the touch screen and is set in advance. In the embodiment of the present application, the touch area of the touch screen can be determined based on the number of capacitive nodes with finger touch.

[0065] If the touch area of the touch screen is less than the preset area, the target temperature drift statistical value of the target node can be determined based on the first capacitive difference value and the second capacitive difference value of the target node.

[0066] The application provides a temperature drift processing method. First, a first capacitance difference value and a second capacitance difference value of each capacitance node in a touch screen are obtained. Then, a target node is determined from the capacitance nodes included in the touch screen. Finally, when the electronic device is in a preset game mode and the temperature of the electronic device is greater than a preset temperature, a target temperature drift statistical value of the target node is determined based on the first capacitance difference value and the second capacitance difference value of the target node. Through the above method, the target temperature drift statistical value of the target node can be limited and processed, thereby effectively improving the touch game experience.

[0067] Please refer to Figure 5 The application embodiment provides a temperature drift processing device 400, which runs in an electronic device including a touch screen. The device 400 includes: An acquisition unit 410 is configured to acquire a first capacitance difference value and a second capacitance difference value of each capacitance node in the touch screen. The first capacitance difference value is a capacitance difference value of each capacitance node at a current time point, and the second capacitance difference value is a capacitance difference value of each capacitance node at a starting time point. A first determination unit 420 is configured to determine a target node from the capacitance nodes included in the touch screen. The target node is a capacitance node in a non-finger touch area.

[0068] A second determination unit 430 is configured to determine a target temperature drift statistical value of the target node based on the first capacitance difference value and the second capacitance difference value of the target node when the temperature of the electronic device is greater than a preset temperature.

[0069] As one way, the second determination unit 430 is specifically configured to determine a temperature drift amount of the target node based on the first capacitance difference value and the second capacitance difference value of the target node. The temperature drift amount is a change amount of the capacitance difference value of the target node caused by temperature change. The second determination unit 430 is specifically configured to determine a temperature drift statistical value of the target node based on the temperature drift amount of the target node. The temperature drift statistical value is a value obtained by limiting and processing the temperature drift amount. The second determination unit 430 is specifically configured to determine a target temperature drift statistical value of the target node based on the temperature drift statistical value of the target node. The target temperature drift statistical value is a value obtained by limiting and processing the temperature drift statistical value.

[0070] As another way, the second determination unit 430 is specifically configured to, if the absolute value of the temperature drift amount of the target node is less than a first threshold value, take the temperature drift amount of the target node as the temperature drift statistical value of the target node; or if the temperature drift amount of the target node is greater than the first threshold value, determine the temperature drift statistical value of the target node based on the first threshold value and the temperature drift amount of the target node.

[0071] Optionally, the second determining unit 430 is specifically configured to determine a temperature drift statistical value of the target node based on the second threshold and the temperature drift of the target node if the temperature drift of the target node is less than the second threshold, the first threshold and the second threshold being thresholds with opposite signs but same absolute values.

[0072] Optionally, the second determining unit 430 is further configured to determine the first capacitance difference value as a target temperature drift statistical value of the target node if the temperature drift statistical value of the target node is greater than the first capacitance difference value, or determine the target temperature drift statistical value of the target node as 0 if the temperature drift statistical value of the target node is less than 0, or determine the target temperature drift statistical value of the target node as a preset value if the temperature drift statistical value of the target node is greater than the preset value, the preset value being greater than 0.

[0073] Optionally, the second determining unit 430 is further configured to acquire a temperature drift statistical value of a neighbor node of a specified node, the specified node being a capacitance node in a specified position of the touch screen in the plurality of target nodes, and determine a target temperature drift statistical value of the specified node based on the temperature drift statistical value of the neighbor node.

[0074] Optionally, the second determining unit 430 is further configured to determine a target temperature drift statistical value of the target node based on the first capacitance difference value and the second capacitance difference value of the target node when the electronic device is in a preset game mode and the temperature of the electronic device is greater than a preset temperature.

[0075] Optionally, the second determining unit 430 is further configured to determine a target temperature drift statistical value of the target node based on the first capacitance difference value and the second capacitance difference value of the target node when the electronic device is in a preset game mode and the temperature of the electronic device is greater than a preset temperature, if a touch area of the touch screen is determined to be less than a preset area based on the first capacitance difference value of each capacitance node.

[0076] It should be noted that the device embodiments in the present application correspond to the foregoing method embodiments, and the specific principles of the device embodiments can be referred to the content in the foregoing method embodiments, which will not be described here.

[0077] The following will be described in combination with Figure 6 An electronic device provided in the present application will be described.

[0078] Please refer to Figure 6, based on the temperature drift processing method and device described above, the embodiment of the present application further provides another electronic device 800 which can execute the foregoing temperature drift processing method. The electronic device 800 comprises one or more (only one is shown in the figure) processors 802, a memory 804 and a network module 806 which are coupled with each other. The memory 804 stores programs which can execute the contents in the foregoing embodiments, and the processor 802 can execute the programs stored in the memory 804.

[0079] The processor 802 can comprise one or more processing cores. The processor 802 connects various parts in the entire electronic device 800 by various interfaces and lines, executes various functions of the electronic device 800 and processes data by running or executing instructions, programs, code sets or instruction sets stored in the memory 804 and calling data stored in the memory 804. Optionally, the processor 802 can be realized in at least one of hardware forms of digital signal processing (DSP), field-programmable gate array (FPGA) and programmable logic array (PLA). The processor 802 can be integrated with a combination of one or more of central processing unit (CPU), graphics processing unit (GPU) and modem. The CPU is mainly used to process operating systems, user interfaces and application programs, etc.; the GPU is used to render and draw display content; and the modem is used to process wireless communication. It can be understood that the foregoing modem can also not be integrated into the processor 802, but be realized by a separate communication chip.

[0080] The memory 804 can comprise random access memory (RAM) and read-only memory (ROM). The memory 804 can be used to store instructions, programs, codes, code sets or instruction sets. The memory 804 can comprise a program storage area and a data storage area. The program storage area can store instructions for implementing an operating system, instructions for implementing functions (such as touch functions, sound playing functions, image playing functions, etc.), instructions for implementing the foregoing method embodiments, etc. The data storage area can also store data created by the terminal 800 in use (such as phone books, audio and video data, chat record data, etc.).

[0081] The network module 806 is configured to receive and send electromagnetic waves, and to convert electromagnetic waves and electrical signals to each other, so as to communicate with a communication network or other devices, for example, to communicate with an electronic device. The network module 806 can include various existing circuit elements for performing these functions, for example, an antenna, a radio frequency transceiver, a digital signal processor, an encryption / decryption chip, a subscriber identity module (SIM) card, a memory, and the like. The network module 806 can communicate with various networks such as the Internet, an intranet, a wireless network, or other devices through the wireless network. The wireless network can include a cellular telephone network, a wireless local area network or metropolitan area network. For example, the network module 806 can interact with a base station.

[0082] Reference is made to Figure 7 which shows a structural block diagram of a computer readable storage medium provided by an embodiment of the present application. The computer readable medium 900 stores program codes, which can be invoked by a processor to execute the methods described in the above method embodiments.

[0083] The computer readable storage medium 900 can be an electronic storage such as a flash memory, an EEPROM (electrically erasable programmable read-only memory), an EPROM, a hard disk or a ROM. Alternatively, the computer readable storage medium 900 includes a non-transitory computer readable medium. The computer readable storage medium 900 has a storage space for program codes 910 to execute any of the above methods. These program codes can be read from or written into one or more computer program products. The program codes 910 can be compressed in an appropriate form, for example.

[0084] The temperature drift processing method and device, the electronic device and the storage medium provided by the present application first acquire a first capacitance difference value and a second capacitance difference value of each capacitance node in the touch screen, the first capacitance difference value is a capacitance difference value of each capacitance node at a current time, and the second capacitance difference value is a capacitance difference value of each capacitance node at a starting time. Then, a target node is determined from the capacitance nodes included in the touch screen, the target node is a capacitance node in a non-finger touch area. When the temperature of the electronic device is greater than a preset temperature, a target temperature drift statistical value of the target node is determined based on the first capacitance difference value and the second capacitance difference value of the target node. Through the above method, the target temperature drift statistical value of the target node can be limited and processed, and the touch control experience can be effectively improved.

[0085] The embodiments of the present application are described above with reference to the accompanying drawings, but the present application is not limited to the above-described specific embodiments, and the above-described specific embodiments are merely illustrative, but not restrictive, and a person of ordinary skill in the art can make many forms under the inspiration of the present application without departing from the purpose of the present application and the scope protected by the claims, and all of them belong to the protection of the present application.

Claims

1. A method for temperature bleaching treatment, characterized in that, Applied to an electronic device, the electronic device including a touchscreen, the method includes: The first capacitance difference and the second capacitance difference of each capacitor node in the touch screen are obtained. The first capacitance difference is the capacitance difference of each capacitor node at the current time, and the second capacitance difference is the capacitance difference of each capacitor node at the starting time. A target node is determined from the capacitive nodes included in the touchscreen, wherein the target node is a capacitive node in a non-finger-touched area; When the temperature of the electronic device is greater than the preset temperature, the target temperature drift statistical value of the target node is determined based on the first capacitance difference and the second capacitance difference of the target node.

2. The method according to claim 1, characterized in that, The determination of the target temperature drift statistical value of the target node based on the first capacitance difference and the second capacitance difference of the target node includes: Based on the first capacitance difference and the second capacitance difference of the target node, the temperature drift of the target node is determined, wherein the temperature drift is the amount of change in the capacitance difference of the target node caused by the temperature change. Based on the temperature drift of the target node, the temperature drift statistical value of the target node is determined. The temperature drift statistical value is the value obtained after limiting the temperature drift. Based on the temperature drift statistics of the target node, a target temperature drift statistics value for the target node is determined. The target temperature drift statistics value is the value obtained after limiting the temperature drift statistics value.

3. The method according to claim 2, characterized in that, Determining the temperature drift statistics of the target node based on the temperature drift of the target node includes: If the absolute value of the temperature drift of the target node is less than the first threshold, the temperature drift of the target node is used as the temperature drift statistical value of the target node; or If the temperature drift of the target node is greater than the first threshold, the temperature drift statistical value of the target node is determined based on the first threshold and the temperature drift of the target node.

4. The method according to claim 3, characterized in that, The method further includes: If the temperature drift of the target node is less than the second threshold, the temperature drift statistical value of the target node is determined based on the second threshold and the temperature drift of the target node. The first threshold and the second threshold are thresholds with opposite positive and negative values ​​but the same absolute value.

5. The method according to claim 2, characterized in that, Determining the target temperature drift statistical value of the target node based on the temperature drift statistical value of the target node includes: If the temperature drift statistical value of the target node is greater than the first capacitance difference, the first capacitance difference is determined as the target temperature drift statistical value of the target node; or If the temperature drift statistics of the target node are less than 0, the target temperature drift statistics of the target node are determined to be 0; or, If the temperature drift statistics of the target node are greater than a preset value, the target temperature drift statistics of the target node are determined to be the preset value, and the preset value is greater than 0.

6. The method according to claim 2, characterized in that, The target node includes multiple capacitor nodes. Determining the target temperature drift statistical value of the target node based on its temperature drift statistical value includes: Obtain the temperature drift statistics of the neighboring nodes of a specified node, wherein the specified node is a capacitive node located at a specified position on the touch screen among a plurality of target nodes; Based on the temperature drift statistics of the neighboring nodes, the target temperature drift statistics of the specified node are determined.

7. The method according to claim 1, characterized in that, When the temperature of the electronic device is greater than a preset temperature, the target temperature drift statistical value of the target node is determined based on the first capacitance difference and the second capacitance difference of the target node, including: When the electronic device is in a preset game mode and the temperature of the electronic device is greater than a preset temperature, the target temperature drift statistical value of the target node is determined based on the first capacitance difference and the second capacitance difference of the target node.

8. The method according to claim 7, characterized in that, When the electronic device is in a preset game mode and the temperature of the electronic device is greater than a preset temperature, the target temperature drift statistical value of the target node is determined based on the first capacitance difference and the second capacitance difference of the target node, including: When the electronic device is in a preset game mode and the temperature of the electronic device is greater than a preset temperature, if the touch area of ​​the touch screen is determined to be less than a preset area based on the first capacitance difference of each capacitor node, then the target temperature drift statistical value of the target node is determined based on the first capacitance difference and the second capacitance difference of the target node.

9. A temperature bleaching treatment device, characterized in that, Operating in an electronic device, the electronic device including a touchscreen, the device includes: The acquisition unit is used to acquire the first capacitance difference and the second capacitance difference of each capacitor node in the touch screen. The first capacitance difference is the capacitance difference of each capacitor node at the current time, and the second capacitance difference is the capacitance difference of each capacitor node at the starting time. The first determining unit is used to determine a target node from the capacitive nodes included in the touch screen, wherein the target node is a capacitive node in a non-finger-touched area; The second determining unit is used to determine the target temperature drift statistical value of the target node based on the first capacitance difference and the second capacitance difference of the target node when the temperature of the electronic device is greater than the preset temperature.

10. An electronic device, characterized in that, It includes one or more processors; one or more programs are stored in the memory and configured to be executed by the one or more processors according to any one of claims 1-8.

11. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores program code, wherein the program code, when executed by a processor, performs the method according to any one of claims 1-8.

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