Ion implantation apparatus and ion implantation method

Abstract

Embodiments of the present application provide an ion implantation apparatus and an ion implantation method. The apparatus comprises: a carrier table for carrying a semiconductor structure; an ion beam generating system for generating an ion beam and driving the ion beam to move towards the semiconductor structure; an ion beam blocking system located between the ion beam generating system and the carrier table, comprising an ion beam passage with an arc-shaped edge; the ion beam is injected into the semiconductor structure through the ion beam passage; a control system for controlling the carrier table to rotate around a specified rotation center and controlling the ion beam passage to move radially along the semiconductor structure, so that the ion beam injected into the semiconductor structure through the ion beam passage forms at least two regions with a circular, annular or sector-annular shape distributed radially along the semiconductor structure on the semiconductor structure; the region arc is matched with the arc-shaped edge arc of the ion beam passage. Through the embodiments of the present application, the width of the transition region between adjacent ion implantation regions on the semiconductor structure along the semiconductor structure is reduced.

Description

Technical Field

[0001] The embodiments in this application relate to the field of semiconductor manufacturing technology, specifically to an ion implantation device and an ion implantation method. Background Technology

[0002] In advanced semiconductor manufacturing processes, regional ion implantation is commonly used to adjust the electrical characteristics of different regions on a wafer to improve the performance and reliability of semiconductor devices. Specifically, by implanting different doses or types of ions into different regions, the ion doping concentration or conductivity type of different regions is changed, thereby optimizing semiconductor device performance parameters such as threshold voltage and carrier mobility.

[0003] However, researchers found that in the process of performing regional ion implantation on wafers using existing technologies, the boundaries between adjacent ion implantation regions in the adjusted wafers obtained by regional ion implantation are relatively blurred. That is, the transition region between adjacent ion implantation regions has a large width along the wafer radial direction, which makes it difficult to meet the process requirements for adjusting the ion doping concentration of different regions. Summary of the Invention

[0004] In view of this, several embodiments of this application provide an ion implantation apparatus and an ion implantation method to reduce the width of the transition region between adjacent ion implantation regions on a wafer along the wafer radial direction.

[0005] In one aspect, an embodiment of this application provides an ion implantation apparatus, comprising: a stage for supporting a semiconductor structure; an ion beam generation system for generating an ion beam and driving the ion beam toward the semiconductor structure; an ion beam blocking system located between the ion beam generation system and the stage; the ion beam blocking system including an ion beam channel with an arcuate edge; the ion beam being implanted into the semiconductor structure through the ion beam channel; and a control system for controlling the stage to rotate around a designated rotation center and controlling the ion beam channel to move radially along the semiconductor structure, such that the ion beam implanted into the semiconductor structure through the ion beam channel forms at least two regions radially distributed on the semiconductor structure; wherein the regions are circular, annular, or fan-shaped; and the curvature of the regions matches the curvature of the arcuate edge of the ion beam channel.

[0006] Optionally, the ion implantation dose in at least one of the at least two regions is zero.

[0007] Optionally, the size and shape of each region are determined according to a preset injection pattern; wherein the region closest to the center of the semiconductor structure is circular in shape, and the remaining regions are annular or fan-shaped.

[0008] Optionally, the control system includes: a stage control unit for controlling the rotation speed of the stage; an ion beam generation system control unit for controlling the current intensity of the ion beam generated by the ion beam generation system; and an ion beam blocking system control unit for controlling the radial movement of the ion beam channel along the semiconductor structure.

[0009] Optionally, the ion beam blocking system includes at least two independently movable baffles; the ion beam blocking system control unit is used to control the movement of the baffles, such that the gap between the at least two baffles forms the ion beam channel; wherein the blocking range of the at least two baffles along the blocking direction perpendicular to the direction of movement of the ion beam is greater than the scanning range of the ion beam along the blocking direction.

[0010] Optionally, the blocking direction includes a first sub-blocking direction; the at least two baffles include two first baffles distributed along the first sub-blocking direction; the first baffle has a first edge for determining the blocking range of the ion beam blocking system along the first sub-blocking direction and a second edge for forming an ion beam channel; wherein the second edge is an arc-shaped edge.

[0011] Optionally, the blocking direction further includes a second sub-blocking direction; the at least two baffles include two second baffles distributed along the second sub-blocking direction; the second baffles have a third edge for determining the blocking range of the ion beam blocking system along the second sub-blocking direction and a fourth edge for forming an ion beam channel.

[0012] In another aspect, one embodiment of this application provides an ion implantation method, comprising: fixing a semiconductor structure to a support stage; generating an ion beam using an ion beam generation system and driving the ion beam to move toward the semiconductor structure; controlling the support stage to rotate around a designated rotation center using a control system, and controlling an ion beam channel with an arc-shaped edge, including an ion beam blocking system, to move radially along the semiconductor structure, such that the ion beam implanted into the semiconductor structure through the ion beam channel forms at least two regions radially distributed on the semiconductor structure; wherein the shape of the regions is circular, annular, or fan-shaped; and the curvature of the regions matches the curvature of the arc-shaped edge of the ion beam channel.

[0013] Optionally, the ion implantation dose in at least one of the at least two regions is zero.

[0014] Optionally, the control system controls the stage to rotate around a designated rotation center and controls the ion beam channel with arc-shaped edges of the ion beam blocking system to move radially along the semiconductor structure, such that the ion beam injected into the semiconductor structure through the ion beam channel forms at least two regions radially distributed on the semiconductor structure. This includes: repeatedly performing the following sub-steps until the at least two regions are formed on the semiconductor structure; the sub-steps include: acquiring a preset implantation pattern; wherein the preset implantation pattern is used to indicate the shape, size, and preset ion implantation dose of the at least two regions; controlling the stage to rotate around the designated rotation center and controlling the ion beam channel to move radially along the semiconductor structure to the first region indicated by the preset implantation pattern. The position is such that the ion beam is injected into the semiconductor structure through the ion beam channel to form a first ion implantation region; wherein, the preset ion implantation dose of the first region is greater than zero; the ion implantation dose of the first ion implantation region is determined according to the rotation speed of the stage, the current intensity of the ion beam, and the implantation time of the ion beam into the semiconductor structure; when the ion implantation dose of the first ion implantation region reaches the preset ion implantation dose of the first region, the first ion implantation region is designated as the first region, and the ion beam channel is controlled to move radially along the semiconductor structure to the position corresponding to the second region indicated by the preset implantation pattern; wherein, the preset ion implantation dose of the second region is greater than zero, and the position corresponding to the second region is different from the position corresponding to the first region.

[0015] In several embodiments of this application, by controlling the stage supporting the semiconductor structure to rotate around a designated rotation center and controlling the ion beam channel with arc-shaped edges included in the ion beam blocking system to move radially along the semiconductor structure, the ion beam injected into the semiconductor structure through the ion beam channel forms at least two regions of circular, annular, or fan-shaped shape distributed radially along the semiconductor structure. Unexpected effects include: because the semiconductor structure rotates at a fixed point around the designated rotation center and the ion beam channel with arc-shaped edges moves radially along the semiconductor structure, the ion implantation dose in different regions of the semiconductor structure can be controlled by controlling the rotation speed of the semiconductor structure and the radial position of the ion beam channel. Furthermore, the shape and size of different regions can be controlled using the ion beam channel with arc-shaped edges, thereby forming multiple regions with clear boundaries on the semiconductor structure and reducing the width of the transition region between adjacent ion implantation regions radially along the semiconductor structure. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in describing the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 A schematic diagram illustrating the relative motion between the wafer and the ion beam during regional ion implantation, provided for related technologies.

[0018] Figure 2 A schematic diagram showing blurred boundaries between adjacent ion implantation regions on a wafer, provided for related technologies.

[0019] Figure 3 A schematic diagram showing different threshold voltages in different regions of the same wafer for related technologies.

[0020] Figure 4 This is a three-dimensional schematic diagram of an ion implantation device provided for one embodiment of this application.

[0021] Figure 5 A schematic diagram of a first preset injection pattern provided for one embodiment of this application.

[0022] Figure 6 A front view of an ion implantation apparatus provided for one embodiment of this application.

[0023] Figure 7 A side view of the ion implantation device with the first edge being an arc-shaped edge.

[0024] Figure 8 A side view of an ion implantation device with the first edge being a straight edge.

[0025] Figure 9 A side view of an ion implantation device with the first edge being a broken line edge.

[0026] Figure 10 A top view of an ion implantation apparatus provided for one embodiment of this application.

[0027] Figure 11 A schematic diagram of a second preset injection pattern provided for one embodiment of this application.

[0028] Figure 12 This is a schematic flowchart of an ion implantation method provided in one embodiment of this application.

[0029] Structural designation explanation

[0030] 100, support stage; 200, ion beam generation system; 210, ion beam generator; 220, ion beam; 300, ion beam blocking system; 310, first baffle; 311, first edge; 312, second edge; 400, first preset injection pattern; 401, first preset injection area; 402, second preset injection area; 403, third preset injection area; 410, second preset injection pattern; 411, fourth preset injection area. Detailed Implementation

[0031] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments.

[0032] The accompanying drawings provided in this application are only schematic illustrations of the basic concept of this application. The drawings only show the components related to this application and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the shape, quantity and proportion of each component may be changed, and the layout of the components may also be more complex.

[0033] In the description of the embodiments of this application, it should be understood that the terms "upper," "lower," "left," "right," "vertical," "horizontal," "inner," "outer," "center," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application, and do not indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined with "first" and "second" may explicitly or implicitly include one or more of the stated features.

[0034] To improve production efficiency and meet the requirements of high-volume manufacturing (HVM) of integrated circuit chips, related technologies typically use a barre wafer as the carrier structure in the chip manufacturing process. A multi-layered structure is formed on the surface of the barre wafer to obtain a structure wafer, which is then diced to obtain multiple individual chips. To improve manufacturing yield and maintain the stability and reliability of chip performance within the same batch, the electrical properties of different regions of the structure wafer need to be consistent.

[0035] However, since it is difficult to keep the multilayer structure formed by films and photoresists on the structured wafer flat, that is, the distance of the multilayer structure from the surface of the flat wafer to the flat wafer is different in different regions of the structured wafer. Therefore, during the ion implantation process of the entire structured wafer, the ion implantation dose and ion implantation depth in different regions may be different. Due to the bombardment of the structured wafer surface by ion implantation, defects may also be generated on the surface of the structured wafer, resulting in deviations in electrical performance parameters such as threshold voltage and carrier mobility in different regions of the entire structured wafer.

[0036] In related technologies, in order to reduce the electrical deviation between different regions in a structured wafer, regional ion implantation is usually used to adjust and control the electrical properties of different regions of the structured wafer.

[0037] Please see Figure 1 In the regional ion implantation method provided by related technologies, ion implantation in different regions of the structured wafer is mainly controlled by the relative motion between the ion beam and the structured wafer. Specifically, the structured wafer is driven to move vertically, and the ion beam is driven to move horizontally. By controlling the position of the structured wafer in the vertical direction and the position of the ion beam in the horizontal direction, the implantation region of the ion beam on the structured wafer is controlled. When the ion implantation dose in one implantation region reaches a preset ion implantation dose, the relative motion between the structured wafer and the ion beam is controlled to change the position of the ion beam implantation on the structured wafer to another implantation region. The above process is repeated until regional ion implantation is completed, resulting in an adjusted structured wafer. During the relative motion between the structured wafer and the ion beam, the structured wafer only rotates by a specified angle when it moves to the vertical limit position, and only translates without rotation during the movement between the two limit positions.

[0038] For any implantation region, the ion implantation dose calculation software calculates the ion implantation dose based on the ion beam's movement speed, the ion beam's position in the horizontal direction, the structure wafer's movement speed, the structure wafer's position in the vertical direction, and the ion beam's ion current density.

[0039] Please see Figure 2 Researchers measured the ion implantation dose of the aforementioned modified structure wafer and found that there was a problem in the modified structure wafer where the transition region between adjacent implanted regions had a large width along the wafer radially. Figure 2 The depth of the gray area indicates the ion implantation dose; the darker the color and the smaller the value, the smaller the ion implantation dose. Figure 2 It can be seen that in the structured wafer, the ion implantation dose is larger in the implantation region near the wafer center and smaller in the implantation region far from the wafer center, and the boundary between adjacent implantation regions is relatively blurred.

[0040] During regional ion implantation, the ion implantation dose in different implantation regions determines the ion doping concentration in different implantation regions of the structured wafer, which in turn affects electrical performance parameters such as threshold voltage in different implantation regions. However, the blurred boundaries between adjacent implantation regions may reduce the precision of electrical adjustment of different implantation regions by regional ion implantation, resulting in lower consistency in adjusting the electrical performance of different regions in the structured wafer.

[0041] Please see Figure 3 Researchers measured the threshold voltage in different regions of the aforementioned modified structure wafer, by... Figure 3 It can be seen that the threshold voltage is different in different regions of the structured wafer.

[0042] Therefore, it is necessary to provide an ion implantation device and a corresponding ion implantation method comprising a stage, an ion beam generation system, an ion beam blocking system, and a control system. By controlling the rotation of the semiconductor structure supported by the stage around a designated rotation center and controlling the radial movement of the ion beam channel with arc-shaped edges included in the ion beam blocking system along the semiconductor structure, the ion beam, after being implanted into the semiconductor structure through the ion beam channel, forms at least two regions of circular, annular, or fan-shaped shapes distributed radially along the semiconductor structure. Thus, by controlling the rotational speed of the semiconductor structure and the radial position of the ion beam channel along the semiconductor structure, the ion implantation dose in different regions of the semiconductor structure can be controlled. Furthermore, by utilizing the ion beam channel with arc-shaped edges to control the shape and size of different regions, clearly defined adjacent implantation regions are formed on the semiconductor structure, thereby reducing the width of the transition region between adjacent ion implantation regions along the radial direction of the semiconductor structure.

[0043] Please see Figure 4 One embodiment of this application provides an ion implantation apparatus. The ion implantation apparatus may include: a stage 100, an ion beam generation system 200, an ion beam blocking system 300, and a control system.

[0044] In this embodiment, the support stage 100 can be used to support a semiconductor structure. Specifically, during ion implantation, the support stage 100 can stably support and fix the semiconductor structure, preventing displacement or tilting, thereby improving the accuracy of ion implantation. For example, the support stage 100 may include a fixing device and a turntable. The fixing device can be used to fix the semiconductor structure onto the turntable. The turntable can be used to rotate the semiconductor structure. The fixing device can be an electrostatic chuck or a mechanical clamp.

[0045] In this embodiment, the semiconductor structure may include a substrate and a multilayer structure formed on the surface of the substrate. Specifically, the substrate can serve as the basis for forming semiconductor devices. For example, the substrate may be made of materials such as silicon (Si), silicon-germanium (SiGe), silicon-germanium-carbon (SiGeC), or silicon carbide (SiC). Considering factors such as dielectric loss requirements, manufacturing processes, and manufacturing costs, this embodiment uses a silicon wafer as the substrate. The multilayer structure may include multiple functional layers sequentially formed on the surface of the substrate, such as an isolation layer, a protective layer, an interconnect layer, and a device layer. The isolation layer can be used to achieve electrical isolation; for example, the isolation layer may be a silicon dioxide (SiO2) layer generated by thermal oxidation. The protective layer can be used to enhance isolation performance and block impurity diffusion; for example, the protective layer may be a silicon nitride (Si3N4) layer. The interconnect layer can be used to form interconnect structures and contacts; for example, the interconnect layer may be a metal material layer such as aluminum (Al), copper (Cu), or tungsten (W). The device layer can be used to form semiconductor device structures such as transistor gates; for example, the device layer may be a doped polysilicon layer.

[0046] In some embodiments, the semiconductor structure may also consist of only a substrate.

[0047] In this embodiment, the ion beam generation system 200 can be used to generate an ion beam 220 and drive the ion beam 220 toward the semiconductor structure. Specifically, the ion beam generation system 200 may include components such as an ion beam generator 210, an accelerator, a quality analyzer, and an ion beam guiding device. By adjusting the parameters of the above components, parameters such as the energy, current density, and focusing degree of the ion beam 220 can be controlled, and the ion beam 220 can be guided to the target position. The ion beam generator 210 can be used to generate the ion beam 220. For example, the ion beam generator 210 can use radio frequency discharge or DC discharge to ionize a gas containing elements such as boron, phosphorus, and arsenic. The accelerator can be used to accelerate the ions to a specified energy level, so that the ion beam 220 has sufficient kinetic energy to penetrate the surface of the semiconductor structure and reach a preset implantation depth. For example, the accelerator can be a linear accelerator or a cyclotron accelerator, which accelerates the ions by applying a high voltage or electromagnetic field. A quality analyzer can be used to screen the ions generated by the ion beam generator 210 to improve the uniformity of ion species in the ion beam 220 implanted into the semiconductor structure. For example, the quality analyzer can be a magnetic quality analyzer or an electrostatic quality analyzer, which separates ions of different masses by deflection through a magnetic field or electric field. An ion beam guiding device can be used to control the direction of movement of the ion beam 220. For example, the ion beam guiding device can include a magnetic lens and an electrostatic lens, which focus and deflect the ion beam 220 by adjusting the strength and direction of the magnetic field and electric field, so that the ion beam 220 moves in a preset direction.

[0048] In this embodiment, the ion beam blocking system 300 can be used to block some ions before the ion beam 220 reaches the semiconductor structure, thereby limiting the overall scanning range of the ion beam 220. Specifically, the ion beam blocking system 300 can be located between the ion beam generation system 200 and the stage 100, and includes an ion beam channel with an arc-shaped edge. The ion beam 220 can be injected into the semiconductor structure through the ion beam channel, thereby allowing the shape and position of the ion beam 220 injected into the semiconductor structure to be controlled using the ion beam channel, forming a region on the semiconductor structure that matches the curvature of the arc-shaped edge of the ion beam channel.

[0049] To enhance the blocking flexibility of the ion beam blocking system 300, in some embodiments, the ion beam blocking system 300 may include at least two independently movable baffles. Specifically, the gap between the at least two baffles can form an ion beam channel, and the blocking range of the at least two baffles along the blocking direction perpendicular to the movement direction of the ion beam 220 is greater than the scanning range of the ion beam 220 along the blocking direction. This ensures that during the movement of the ion beam 220 from the ion beam generation system 200 to the semiconductor structure, only a portion of the ions can be injected into the semiconductor structure through the gap between the baffles, while the remaining ions cannot be injected into the semiconductor structure due to being blocked by the baffles.

[0050] To enhance the ability of regional ion implantation to modulate the electrical properties of different regions of a semiconductor structure, in some embodiments, the size and shape of the regions formed on the semiconductor structure can be determined according to a preset implantation pattern. Specifically, the preset implantation pattern may include multiple preset implantation regions, each corresponding to a region formed on the semiconductor structure; that is, the preset implantation regions have the same shape and size as the regions formed on the semiconductor structure, or are proportional to them. For example, the preset implantation region closest to the center of the preset implantation pattern may be circular, while the remaining regions may be annular or fan-shaped. Correspondingly, on the semiconductor structure, the region closest to the center of the semiconductor structure is circular, while the remaining regions are annular or fan-shaped. When the size of the preset implantation region is proportional to the size of the region formed on the semiconductor structure, the ratio between the size of the multiple preset implantation regions and the size of the corresponding region is the same.

[0051] Please see Figure 5Taking the first preset injection pattern 400 as an example, the first preset injection pattern 400 includes a first preset injection region 401, a second preset injection region 402, and a third preset injection region 403. The first preset injection region 401 is a circular region, while the second preset injection region 402 and the third preset injection region 403 are both annular regions. Accordingly, when the regions formed on the semiconductor structure are determined according to the first preset injection pattern 400, the first region corresponding to the first preset injection region 401 is a circular region, and the second and third regions corresponding to the second preset injection region 402 and the third preset injection region 403, respectively, are annular regions.

[0052] Please refer to the following: Figures 4 to 10 To enhance the ability of the ion beam blocking system 300 to block the ion beam 220 in different directions and improve the confinement accuracy of the ion beam 220 passing through the ion beam blocking system 300, in some embodiments, the blocking direction may include a first sub-blocking direction X. At least two baffles may include two first baffles 310 distributed along the first sub-blocking direction X. Specifically, each first baffle 310 may have a first edge 311 and a second edge 312.

[0053] Please see Figure 7 To restrict ions to pass through the ion beam blocking system 300 only from the ion beam channel and prevent some ions from escaping from the edge of the ion beam blocking system 300 in the first sub-blocking direction X, the first edge 311 can be used to determine the blocking range of the ion beam blocking system 300 along the first sub-blocking direction X. That is, the first edge 311 can be the edge of the first baffle 310 away from the ion beam 220.

[0054] Since the size and shape of the region formed on the semiconductor structure need to match the size and shape of the preset implantation region in the preset implantation pattern, and the size and shape of the region formed on the semiconductor structure are determined by the ion beam channel, which is formed based on the second edge 312, the second edge 312 can be the arc-shaped edge of the first baffle 310 approaching the ion beam 220. Furthermore, the arc of the second edge 312 matches the edge arc of each preset implantation region in the preset implantation pattern. Along the first sub-blocking direction X, the distance between the second edges 312 of the two first baffles 310 matches the width of each preset implantation region along the radial direction of the preset implantation pattern. Specifically, to make the shape of the ion beam channel match the shape of each preset implantation region in the preset implantation pattern, in the two first baffles 310, the second edge 312 of one first baffle 310 can be a concave arc-shaped edge, and the second edge 312 of the other first baffle 310 can be a convex arc-shaped edge.

[0055] To reduce the manufacturing cost of the first baffle 310, the two first baffles 310 can have the same shape. In this case, in order to match the shape of the ion beam channel with the shape of each preset injection region in the preset injection pattern, the first edge 311 can be an arc-shaped edge with the same curvature as the second edge 312, and in each first baffle 310, one of the first edge 311 and the second edge 312 is a raised arc-shaped edge, and the other is a recessed arc-shaped edge.

[0056] Please refer to the following: Figure 8 and Figure 9 In some embodiments, to reduce the manufacturing complexity of the first baffle 310, the first edge 311 can be a straight edge. To expand the blocking range of the ion beam blocking system 300 along the first sub-blocking direction X, the first edge 311 can be a raised zigzag edge.

[0057] Please continue reading. Figures 4 to 10 When an ion beam channel is formed based on the second edges 312 of the two first baffles 310, the ion beam channel restricts the ion beam 220 only in the first sub-blocking direction X. Taking the region formed on the semiconductor structure as determined according to the first preset implantation pattern 400 as an example, the curvature of the second edge 312 matches the curvature of the three preset implantation regions included in the first preset implantation pattern 400. During the formation of the first region corresponding to the first preset implantation region 401, the distance between the second edges 312 of the two first baffles 310 along the first sub-blocking direction X is equal to the radius of the first preset implantation region 401. During the formation of the second region corresponding to the second preset implantation region 402 and the third region corresponding to the third preset implantation region 403, the distance between the second edges 312 of the two first baffles 310 along the first sub-blocking direction X is equal to the width of the second preset implantation region 402 and the third preset implantation region 403 along the radial direction of the first preset implantation pattern 400, respectively.

[0058] Please see Figure 11When the shape or size of the preset implantation region is unusual, forming an ion beam channel based solely on the second edge may result in blurred boundaries of some regions formed on the semiconductor structure. Taking the second preset implantation pattern 410 as an example, in the second preset implantation pattern 410, the fourth preset implantation region 411 is a fan-shaped annular region, and the remaining preset implantation regions are circular or annular regions. In this case, if an ion beam channel is formed solely based on the second edge, the boundary of the fan-shaped annular region corresponding to the fourth preset implantation region 411 formed by the ion beam injected into the semiconductor structure through this ion beam channel along the radial direction of the semiconductor structure may be quite blurred. Therefore, to further improve the ion beam confinement accuracy of the ion beam blocking system and improve the matching degree between the shape and size of the regions formed on the semiconductor structure and the preset implantation regions, in some embodiments, the blocking direction may also include a second sub-blocking direction. At least two baffles may include two second baffles distributed along the second sub-blocking direction. Specifically, each second baffle may have a third edge and a fourth edge. To restrict ions to pass through the ion beam blocking system only from the ion beam channel and prevent some ions from escaping from the edge of the ion beam blocking system in the second sub-blocking direction, the third edge can be used to determine the blocking range of the ion beam blocking system along the second sub-blocking direction. The fourth edge can be used to cooperate with the second edge of the first baffle to jointly form the ion beam channel. For example, when the preset implantation region shape is a fan ring, the fourth edge can be a straight edge. Furthermore, in the process of forming the region corresponding to the preset implantation region other than the fourth preset implantation region 411 in the second preset implantation pattern 410, the ion beam channel that restricts the ion beam only in the first sub-blocking direction can be formed using only the second edges of the two first baffles, which will not be elaborated here.

[0059] In some embodiments, to improve the confinement accuracy of the ion beam in the second sub-blocking direction of the ion beam blocking system, limiting portions can be provided on the two first baffles to confine the ion beam in both the first and second sub-blocking directions. Specifically, the limiting portion may have a first limiting edge for defining the ion beam blocking system along the second sub-blocking direction and a second limiting edge for cooperating with the second edge of the first baffle to form an ion beam channel. For example, if the preset injection region shape is a fan ring, the second limiting edge may be a straight edge.

[0060] In some embodiments, the scanning range of the ion beam along the direction of the second sub-block can also be controlled by controlling the magnetic field of the ion beam guiding device in the ion beam generation system.

[0061] Please continue reading. Figures 4 to 10In this embodiment, the control system can be used to control the stage 100 to rotate around a designated rotation center and to control the ion beam channel to move radially along the semiconductor structure, so that the ion beam 220 injected into the semiconductor structure through the ion beam channel forms at least two regions radially distributed on the semiconductor structure. The shape of the regions formed on the semiconductor structure can be circular, annular, or fan-shaped, and the curvature of the regions can match the curvature of the arc-shaped edge of the ion beam channel. Specifically, since the relative motion between the ion beam 220 and the semiconductor structure consists of the fixed-point rotational motion of the semiconductor structure and the radial movement of the ion beam 220 along the semiconductor structure, the position and dose of the ion beam 220 injected into the semiconductor structure can be changed by controlling the rotation of the stage 100 and the radial movement of the ion beam channel along the semiconductor structure using the control system. Furthermore, by controlling the channel opening size of the ion beam channel with arc-shaped edges using the control system, the shape and size of different regions formed on the semiconductor structure can be controlled. This allows for the formation of multiple regions with clear boundaries on the semiconductor structure, reducing the width of the transition region between adjacent ion implantation regions along the radial direction of the semiconductor structure. Consequently, the adjustment accuracy of the electrical properties of different regions on the semiconductor structure is improved, and the difference between the threshold voltages of different regions on the semiconductor structure is reduced.

[0062] To improve the control accuracy and flexibility of the control system, in some embodiments, the control system may include: a stage control unit, an ion beam generation system control unit, and an ion beam blocking system control unit. The stage control unit can be used to control the rotational speed of the stage 100. Since the semiconductor structure is relatively stationary with respect to the stage 100, the rotational speed of the stage 100 is the same as the rotational speed of the semiconductor structure. The ion beam generation system control unit can be used to control the current intensity of the ion beam 220 generated by the ion beam generation system 200. The current intensity of the ion beam 220 can be determined according to the manufacturing requirements of the integrated circuit chip. The ion beam blocking system control unit can be used to control the radial movement of the ion beam channel along the semiconductor structure. Since the ion beam channel is formed by the gap between at least two baffles included in the ion beam blocking system 300, controlling the movement of the ion beam channel is actually controlling the movement of the baffles.

[0063] To improve the uniformity of ion implantation within a single region and reduce the difference in ion implantation dose between different locations within the same region, in some embodiments, the control system controls the stage 100 to rotate around a designated rotation center and controls the ion beam channel of the ion beam blocking system 300 to move radially along the semiconductor structure, such that the ion beam 220 implanted into the semiconductor structure through the ion beam channel forms at least two regions radially distributed on the semiconductor structure. This may include repeating the following sub-steps until at least two regions are formed on the semiconductor structure. Specifically, the sub-steps may include: obtaining a preset implantation pattern; controlling the stage 100 to rotate around a designated rotation center using a control system, and controlling the ion beam channel to move radially along the semiconductor structure to the position corresponding to the first region indicated by the preset implantation pattern, so that the ion beam 220 is injected into the semiconductor structure through the ion beam channel to form a first ion implantation region; determining the ion implantation dose of the first ion implantation region based on the rotation speed of the stage 100, the current intensity of the ion beam 220, and the implantation time of the ion beam 220 into the semiconductor structure; and when the ion implantation dose of the first ion implantation region reaches the preset ion implantation dose of the first region, designating the first ion implantation region as the first region, and controlling the ion beam channel to move radially along the semiconductor structure to the position corresponding to the second region indicated by the preset implantation pattern.

[0064] In this embodiment, during the formation of any region on the semiconductor structure, the rotation speed of the stage 100 can be kept constant by the stage control unit, the current intensity of the ion beam 220 can be kept constant by the ion beam generation system control unit, and the position of the ion beam channel along the radial direction of the semiconductor structure can be kept constant by the ion beam blocking system control unit. This converts the relative motion between the semiconductor structure and the ion beam 220 into the rotational motion of the semiconductor structure, reducing the influence of the performance parameters and motion of the ion beam 220 on the uniformity of ion implantation, and allowing the ion beam to be implanted at different positions in the region with a constant dose.

[0065] In this embodiment, the preset ion implantation doses of both the first region and the second region are greater than zero, and the position corresponding to the second region is different from the position corresponding to the first region.

[0066] In this embodiment, in addition to indicating the shape and size of each region formed on the semiconductor structure, the preset implantation pattern can also be used to indicate the preset ion implantation dose of each region formed on the semiconductor structure. The preset ion implantation dose can be determined according to the manufacturing requirements of the integrated circuit chip. Specifically, the preset implantation pattern can show the preset ion implantation dose of each preset implantation region corresponding to each region formed on the semiconductor structure. Taking the first preset implantation pattern 400 as an example, when the preset ion implantation doses of the three preset implantation regions included in the first preset implantation pattern 400 are all greater than zero, the relationship between the preset ion implantation doses of the three preset implantation regions can include: the first preset ion implantation dose and the third preset ion implantation dose are both greater than the second preset ion implantation dose; or, the first preset ion implantation dose and the third preset ion implantation dose are both less than the second preset ion implantation dose; or, the first preset ion implantation dose, the second preset ion implantation dose, and the third preset ion implantation dose increase sequentially; or, the first preset ion implantation dose, the second preset ion implantation dose, and the third preset ion implantation dose decrease sequentially.

[0067] For any region formed on the semiconductor structure, since the control system can control the stage 100 to rotate uniformly around a designated rotation center, the ion implantation dose for that region can be determined based solely on the residence time of the ion beam 220 on the semiconductor structure, the rotational speed of the semiconductor structure, and the ion current density of the ion beam 220. This simplifies the process of determining the ion implantation dose for a single region and reduces the complexity of determining the ion implantation dose for a single region. When the size, shape, and ion implantation dose of each region formed on the semiconductor structure correspond to the size, shape, and ion implantation dose of each preset implantation region, it can be concluded that the electrical properties of different regions in the semiconductor structure meet the manufacturing requirements of integrated circuit chips.

[0068] To meet the specific requirements for adjusting the electrical properties of different regions of a semiconductor structure, in some embodiments, when the preset ion implantation dose in at least one preset implantation region is zero, the radial movement of the ion beam channel along the semiconductor structure can be achieved by moving a baffle. Therefore, the baffle can be used to block some ions implanted into the semiconductor structure at a position corresponding to the preset implantation region, thereby making the ion implantation dose in at least one of the at least two regions formed in the semiconductor structure zero. Specifically, taking the first preset implantation pattern 400 as an example, when the preset ion implantation dose in the first preset implantation region 401 is zero, the ion beam channel can be moved radially along the semiconductor structure to a position corresponding to the second preset implantation region 402. At this time, because some ions implanted into the semiconductor structure at a position corresponding to the first preset implantation region 401 are blocked by the baffle and cannot be implanted into the semiconductor structure, the ion implantation dose in the first region corresponding to the first preset implantation region 401 in the region formed on the semiconductor structure is zero.

[0069] Please see Figure 12 One embodiment of this application provides an ion implantation method. The ion implantation method may include steps S110, S120, and S130.

[0070] S110: Fix the semiconductor structure to the support stage.

[0071] S120: An ion beam is generated using an ion beam generation system and driven towards the semiconductor structure.

[0072] S130: The control system controls the stage to rotate around a designated rotation center and controls the ion beam channel of the ion beam blocking system to move radially along the semiconductor structure, so that the ion beam injected into the semiconductor structure through the ion beam channel forms at least two regions radially distributed on the semiconductor structure.

[0073] In this embodiment, the shape of the region formed on the semiconductor structure can be circular, annular, or fan-shaped.

[0074] In this embodiment, the curvature of the region formed on the semiconductor structure matches the curvature of the arc-shaped edge of the ion beam channel.

[0075] In this embodiment, the ion implantation dose of at least one of the at least two regions formed on the semiconductor structure can be zero.

[0076] In this embodiment, step S130 may include: repeating the following sub-steps until at least two regions are formed on the semiconductor structure. The sub-steps may include:

[0077] S131: Obtain the preset injection pattern.

[0078] In this embodiment, the preset implantation pattern can be used to indicate the shape, size, and preset ion implantation dose of at least two regions.

[0079] S132: The control system controls the stage to rotate around the designated rotation center and controls the ion beam channel to move radially along the semiconductor structure to the position corresponding to the first region indicated by the preset implantation pattern, so that the ion beam is injected into the semiconductor structure through the ion beam channel to form the first ion implantation region.

[0080] In this embodiment, the preset ion implantation dose in the first region is greater than zero.

[0081] S133: Determine the ion implantation dose of the first ion implantation region based on the rotation speed of the stage, the current intensity of the ion beam, and the implantation time of the ion beam into the semiconductor structure; when the ion implantation dose of the first ion implantation region reaches the preset ion implantation dose of the first region, take the first ion implantation region as the first region, and control the ion beam channel to move radially along the semiconductor structure to the position corresponding to the second region indicated by the preset implantation pattern.

[0082] In this embodiment, the preset ion implantation dose of the second region is greater than zero, and the position corresponding to the second region is different from the position corresponding to the first region.

[0083] The technical effects of the ion implantation method described in the above embodiments can be explained by referring to other embodiments of this application, and will not be repeated here.

[0084] In this embodiment, by controlling the carrier stage supporting the semiconductor structure to rotate around a designated rotation center, and controlling the ion beam channel with arc-shaped edges included in the ion beam blocking system to move radially along the semiconductor structure, the ion beam injected into the semiconductor structure through the ion beam channel forms at least two regions of circular, annular, or fan-shaped shape distributed radially along the semiconductor structure. The unexpected effects achieved include: controlling the ion implantation dose of different regions on the semiconductor structure by controlling the rotation speed of the semiconductor structure and the radial position of the ion beam channel along the semiconductor structure, and controlling the shape and size of different regions by using the ion beam channel with arc-shaped edges, thereby forming multiple regions with clear boundaries on the semiconductor structure, reducing the width of the transition region between adjacent ion implantation regions along the radial direction of the semiconductor structure, thereby improving the accuracy of adjusting the electrical performance of different regions on the semiconductor structure, and reducing the difference between the threshold voltages of different regions on the semiconductor structure.

[0085] It is understood that the specific examples in this application are only intended to help those skilled in the art better understand the embodiments of this application, and are not intended to limit the scope of this application.

[0086] It is understood that in the various embodiments of this application, the sequence number of each process does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not limit the implementation process of the embodiments of this application in any way.

[0087] It is understood that the various embodiments described in this application can be implemented individually or in combination, and the embodiments of this application are not limited in this respect.

[0088] Unless otherwise stated, all technical and scientific terms used in the embodiments of this application have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used in this application is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. The term "and / or" as used in this application includes any and all combinations of one or more of the associated listed items. The singular forms "a," "the," and "the" as used in the embodiments of this application and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise.

[0089] As will be understood from the several embodiments provided in this application, the disclosed ion implantation apparatus can be implemented in other ways. For example, the embodiments of the ion implantation apparatus described above are merely illustrative.

[0090] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. An ion implantation device, characterized in that, include: A support platform is used to support semiconductor structures; An ion beam generation system for generating an ion beam and driving the ion beam toward the semiconductor structure; An ion beam blocking system is located between the ion beam generating system and the support stage; the ion beam blocking system includes at least two independently movable first baffles distributed along a first sub-blocking direction; the first baffles have a second edge for forming an ion beam channel; wherein the second edge is an arc-shaped edge; the ion beam is injected into the semiconductor structure through the ion beam channel; A control system is configured to control the stage to rotate around a designated rotation center and control the ion beam channel to move radially along the semiconductor structure, such that the ion beam injected into the semiconductor structure through the ion beam channel forms at least two regions radially distributed on the semiconductor structure; wherein, at least one of the at least two regions, including the center of the semiconductor structure, has a zero ion implantation dose; the region is circular, annular, or fan-shaped; the curvature of the region matches the curvature of the arcuate edge of the ion beam channel; and the width of the region radially along the semiconductor structure matches the distance between the second edges of the two first baffles.

2. The device according to claim 1, characterized in that, The size and shape of each region are determined according to a preset injection pattern; wherein the region closest to the center of the semiconductor structure is circular, and the remaining regions are annular or fan-shaped.

3. The device according to claim 1, characterized in that, The control system includes: The support platform control unit is used to control the rotation speed of the support platform; An ion beam generation system control unit is used to control the current intensity of the ion beam generated by the ion beam generation system. An ion beam blocking system control unit is used to control the radial movement of the ion beam channel along the semiconductor structure.

4. The device according to claim 3, characterized in that, The blocking range of the at least two first baffles along the blocking direction perpendicular to the direction of movement of the ion beam is greater than the scanning range of the ion beam along the blocking direction.

5. The device according to claim 4, characterized in that, The first baffle also has a first edge for defining the blocking range of the ion beam blocking system along the first sub-blocking direction.

6. The device according to claim 4, characterized in that, The blocking direction further includes a second sub-blocking direction; the at least two baffles include two second baffles distributed along the second sub-blocking direction; the second baffles have a third edge for determining the blocking range of the ion beam blocking system along the second sub-blocking direction and a fourth edge for forming an ion beam channel.

7. An ion implantation method, characterized in that, include: The semiconductor structure is fixed to the support platform; An ion beam is generated using an ion beam generation system, and the ion beam is driven to move toward the semiconductor structure. The control system controls the stage to rotate around a designated rotation center, and controls at least two independently movable first baffles distributed along the first sub-blocking direction of the ion beam blocking system to move radially along the semiconductor structure, such that the ion beam injected into the semiconductor structure through the second edge of the first baffle forms at least two regions radially distributed on the semiconductor structure; wherein the second edge is an arc-shaped edge; At least one of the at least two regions, including the region containing the center of the semiconductor structure, has a zero ion implantation dose; the region is circular, annular, or fan-shaped; the curvature of the region matches the curvature of the arcuate edge of the ion beam channel; and the width of the region along the radial direction of the semiconductor structure matches the distance between the second edges of the two first baffles.

8. The method according to claim 7, characterized in that, The control system controls the stage to rotate around a designated rotation center, and controls at least two independently movable first baffles, distributed along the first sub-baffle direction, of the ion beam blocking system to move radially along the semiconductor structure, such that the ion beam injected into the semiconductor structure through the second edge of the first baffle forms at least two regions radially distributed on the semiconductor structure, including: Repeat the following sub-steps until the at least two regions are formed on the semiconductor structure; the sub-steps include: Obtain a preset implantation pattern; wherein the preset implantation pattern is used to indicate the shape, size and preset ion implantation dose of the at least two regions; The control system controls the stage to rotate around a designated rotation center and controls the ion beam channel to move radially along the semiconductor structure to the position corresponding to the first region indicated by the preset implantation pattern, so that the ion beam is injected into the semiconductor structure through the ion beam channel to form a first ion implantation region; wherein the preset ion implantation dose of the first region is greater than zero. The ion implantation dose of the first ion implantation region is determined based on the rotation speed of the stage, the current intensity of the ion beam, and the implantation time of the ion beam into the semiconductor structure. When the ion implantation dose of the first ion implantation region reaches the preset ion implantation dose of the first region, the first ion implantation region is designated as the first region, and the ion beam channel is controlled to move radially along the semiconductor structure to the position corresponding to the second region indicated by the preset implantation pattern. The preset ion implantation dose of the second region is greater than zero, and the position corresponding to the second region is different from the position corresponding to the first region.

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