Semiconductor cleaning shroud apparatus and semiconductor cleaning apparatus

Abstract

Embodiments of the present disclosure provide a semiconductor cleaning shield device and a semiconductor cleaning apparatus, wherein the semiconductor cleaning shield device comprises: a first shield in the shape of a ring coaxially surrounding a wafer, the first shield comprising a first wall body and a first bent portion, the first bent portion being arranged at a top end of the first wall body and being bent towards a direction close to the wafer; and a second shield, a height difference between a top end of the second shield and the first bent portion being adjustable, so that the first shield and the second shield are switched between a first working condition and a second working condition; wherein in the first working condition, the wafer is located between the first bent portion and the second shield along a height direction, and a radially inner wall surface of the first wall body is used to block liquid droplets spun out by the wafer, and in the second working condition, the top end of the second shield is fitted to the first bent portion, so that the first wall body, the first bent portion and the second shield form a first cleaning space for the cleaning liquid to flow.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor cleaning technology, and in particular to a semiconductor cleaning shield device and semiconductor cleaning equipment. Background Technology

[0002] In the semiconductor industry, wafer cleaning processes include electroplating edge cleaning and photoresist edge cleaning. To prevent chemical splashing, anti-splatter shields are placed around the wafer. During wafer rotation, most of the droplets ejected hit the center of the shield and slide down the inner wall of the shield. When the chemical solution is viscous or when acid or alkaline gases crystallize, residues will be generated on the inner wall of the shield. If these residues splash back onto the wafer surface, it will cause yield loss.

[0003] Currently, there are two main methods for cleaning protective covers: one is to perform regular preventative maintenance on the machine cavity, with manual wiping of the inner wall of the cover to remove residue; the other is to use a conveyor arm to spray deionized water onto the surface of a vacuum suction cup, and then use the centrifugal force generated by the high-speed rotation of the vacuum suction cup to throw the deionized water onto the inner wall for cleaning. Existing protective cover cleaning methods have low cleaning efficiency and poor cleaning results. Summary of the Invention

[0004] This disclosure provides a semiconductor cleaning shield device and semiconductor cleaning equipment, which can improve the cleaning effect of the semiconductor cleaning shield device.

[0005] According to a first aspect of this disclosure, a semiconductor cleaning shield apparatus is provided, comprising:

[0006] A first shield, annular and coaxially surrounding the wafer, includes a first wall and a first bend, the first bend being located at the top of the first wall and bending towards the wafer; and

[0007] The second shield is located radially inside the first shield and spaced apart from the first shield. The second shield is annular and coaxially surrounds the wafer. The height difference between the top of the second shield and the first bend is adjustable so that the first shield and the second shield can switch between the first operating condition and the second operating condition.

[0008] In the first operating condition, the wafer is located between the first bend and the second shield along the height direction. The radial inner side of the first wall is used to block the droplets thrown out by the rotating wafer. In the second operating condition, the top of the second shield is attached to the first bend, so that the first wall, the first bend and the second shield enclose a first cleaning space for the cleaning fluid to flow.

[0009] In some embodiments, the first shield is liftable and / or the second shield is liftable.

[0010] In some embodiments, the semiconductor cleaning shield apparatus further includes:

[0011] The bottom wall includes a first opening for liquid outflow, a first shield and a second shield are both disposed on the bottom wall, the first opening is located between the first shield and the second shield, and the first opening may be selectively connected to a first discharge line or a first recovery line.

[0012] In some embodiments, the first bending portion bends toward the radial inner wall surface of the first wall body. The first bending portion includes a first liquid outlet component. The first wall body is provided with a first cleaning liquid flow pipe connected to the first liquid outlet component. In the second working condition, the first liquid outlet of the first liquid outlet component sprays cleaning liquid into the first cleaning space.

[0013] In some embodiments, along the first direction, the cross-sectional dimension of the first cleaning fluid flow pipe is smaller than the thickness dimension of the first wall.

[0014] In some embodiments, the first cleaning fluid flow pipeline includes a plurality of flow channels spaced apart circumferentially, the main body of the flow channels extending along the height direction, and the first liquid outlet component includes a plurality of first liquid outlets spaced apart circumferentially, with the plurality of flow channels and the plurality of first liquid outlets corresponding one-to-one.

[0015] In some embodiments, the circumferential angular interval between any two adjacent flow channels is equal and is 5°.

[0016] In some embodiments, the bottom end of the first wall body is provided with an annular liquid supply pipe communicating with multiple flow channels.

[0017] An annular supply pipe is connected to a cleaning fluid source. A one-way valve is installed between the annular supply pipe and the cleaning fluid source. The one-way valve is configured to allow the cleaning fluid to flow unidirectionally only from the cleaning fluid source to the annular supply pipe; and / or

[0018] The ring-shaped liquid supply pipe can be selectively connected to a dry gas source.

[0019] In some embodiments, the semiconductor cleaning shield apparatus further includes:

[0020] The third shield is located radially outside the first shield and spaced apart from the first shield. The third shield is annular and coaxially surrounds the wafer. The third shield includes a third wall and a third bend. The third bend is located at the top of the third wall and bends toward the direction close to the wafer. The height difference between the top of the first shield and the third bend is adjustable so that the third shield and the first shield can switch between a third operating condition and a fourth operating condition.

[0021] In the third operating condition, the wafer is located between the third bend and the first shield along the height direction. The radial inner wall of the third wall is used to block the droplets thrown out by the wafer during rotation. In the fourth operating condition, the top of the first shield is attached to the third bend so that the third wall, the third bend and the first shield enclose a second cleaning space for the cleaning fluid to flow.

[0022] According to a second aspect of this disclosure, a semiconductor cleaning apparatus is provided, comprising:

[0023] A cleaning platform for holding wafers; the cleaning platform is rotatable; and

[0024] The semiconductor cleaning shield device in the above embodiment is located on the radial outer side of the cleaning platform.

[0025] In this embodiment of the semiconductor cleaning shield apparatus, the top of the second shield is attached to the first bend to form a first cleaning space, which helps to increase the scouring intensity of the cleaning fluid and improve the cleaning effect of the semiconductor cleaning shield apparatus. At the same time, it can improve the consistency and stability of the cleaning effect. During the self-cleaning process of the shield, it prevents residues or cleaning fluid from overflowing or splashing and contaminating the wafer cleaning chamber. The cleaning of the radial inner wall of the first wall does not occupy the vacuum suction cup and the conveying arm, and will not affect other radial inner wall surfaces, which can ensure the continuous high quality of the wafer cleaning process. The shield cleaning has little impact on the throughput of the machine. The self-cleaning of the semiconductor cleaning shield apparatus does not require manual wiping, which can improve the self-cleaning efficiency and the automation level of the semiconductor cleaning equipment. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of this disclosure or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 This is a schematic diagram of the first operating condition of some embodiments of the semiconductor cleaning shield device in the semiconductor cleaning equipment disclosed herein.

[0028] Figure 2 This is a schematic diagram of the second operating condition of some embodiments of the semiconductor cleaning shield device in the semiconductor cleaning equipment of this disclosure.

[0029] Figure 3 This is a schematic diagram of the structure of some embodiments of the first shield and one-way valve of the semiconductor cleaning shield device in the semiconductor cleaning equipment disclosed herein.

[0030] Figure 4This is a schematic diagram of the switching of the use state of the semiconductor cleaning shield device in the semiconductor cleaning equipment disclosed herein. In the figure, (a1) and (a2) are the zero working condition, (b1) and (b2) are the first working condition, and (c1) and (c2) are the second working condition. In the figure, (a1), (b1) and (c1) are three-dimensional structural schematic diagrams, and (a2), (b2) and (c2) are two-dimensional structural schematic diagrams.

[0031] Explanation of reference numerals in the attached figures:

[0032] 1. First protective cover; 2. Second protective cover; 3. Third protective cover; 4. Fourth protective cover; 5. Bottom wall; 6. Liquid delivery arm; 10. First cleaning space; 11. First wall; 110. Annular liquid supply pipe; 111. One-way valve; 12. First liquid outlet component; 120. First liquid outlet; 13. First cleaning fluid flow pipe; 130. Flow channel; 31. Third wall; 32. Third liquid outlet component; 320. Third liquid outlet; 33. Third cleaning fluid flow pipe Piping; 41, Fourth wall; 42, Fourth liquid outlet component; 420, Fourth liquid outlet; 43, Fourth cleaning fluid flow pipeline; 51, First opening; 511, First discharge pipeline; 512, First recovery pipeline; 52, Second opening; 521, Second discharge pipeline; 522, Second recovery pipeline; 53, Third opening; 531, Third discharge pipeline; 532, Third recovery pipeline; 100, Wafer; 101, Cleaning platform; x, First direction. Detailed Implementation

[0033] Various exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings. The descriptions of the exemplary embodiments are merely illustrative and are in no way intended to limit the present disclosure or its application or use. The present disclosure may be implemented in many different forms and is not limited to the embodiments described herein. These embodiments are provided so that the present disclosure will be thorough and complete, and will fully express the scope of the disclosure to those skilled in the art. It should be noted that, unless specifically stated otherwise, the relative arrangement of components and steps, the composition of materials, numerical expressions, and values ​​set forth in these embodiments should be interpreted as exemplary only and not as limiting.

[0034] The terms "first," "second," and similar words used in this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish different parts. Words such as "including" or "contains" mean that the element preceding the word encompasses the element listed after it, and do not exclude the possibility of encompassing other elements as well. Terms such as "above," "below," "left," and "right" are used only to indicate relative positional relationships; when the absolute position of the described object changes, this relative positional relationship may also change accordingly.

[0035] In this disclosure, when a specific device is described as being located between a first device and a second device, an intermediary device may or may not be present between the specific device and the first or second device. When a specific device is described as being connected to other devices, the specific device may be directly connected to the other devices without an intermediary device, or it may be not directly connected to the other devices but have an intermediary device.

[0036] All terms used in this disclosure (including technical or scientific terms) have the same meaning as understood by one of ordinary skill in the art to which this disclosure pertains, unless otherwise specifically defined. It should also be understood that terms defined in a general dictionary, such as a dictionary, should be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and not as having an idealized or highly formalized meaning, unless expressly defined herein.

[0037] Techniques, methods, and equipment known to those skilled in the art may not be discussed in detail, but where appropriate, they should be considered part of the specification.

[0038] Based on the embodiments disclosed above, in the absence of explicit denial or conflict, the technical features of one embodiment may be advantageously combined with one or more other embodiments.

[0039] During the research process, the inventors discovered that, on the one hand, the current equipment has a large number of cavities, with some models having more than twenty cavities. Regular preventive maintenance wastes a lot of manpower, and when the equipment reaches the end of PM operation, residues have already formed on the inner wall of the shield. If these residues are not wiped off, they will splash back onto the wafer surface, greatly increasing the risk of yield loss. On the other hand, if a conveyor arm is used to spray deionized water onto the surface of the vacuum chuck and use the centrifugal force generated by high-speed rotation to achieve cleaning, this process must be carried out in conjunction with the vacuum chuck and conveyor arm. The cavities cannot operate during the cleaning of the shield sidewalls and must be idle, resulting in a reduction in the throughput of the equipment.

[0040] To address at least one of the aforementioned problems, this disclosure provides a semiconductor cleaning shield apparatus, such as... Figures 1 to 4 As shown, in some embodiments, the semiconductor cleaning shield apparatus includes:

[0041] The first shield 1 is annular and coaxially surrounds the wafer 100. The first shield 1 includes a first wall 11 and a first bend. The first bend is located at the top of the first wall 11 and bends towards the wafer 100.

[0042] The second shield 2 is located radially inside the first shield 1 and spaced apart from the first shield 1. The second shield 2 is annular and coaxially surrounds the wafer 100. The height difference between the top of the second shield 2 and the first bend is adjustable so that the first shield 1 and the second shield 2 can switch between the first working condition and the second working condition.

[0043] In the first operating condition, the wafer 100 is located between the first bend and the second shield 2 along the height direction. The radial inner side of the first wall 11 is used to block the droplets thrown out by the rotating wafer 100. In the second operating condition, the top of the second shield 2 is attached to the first bend, so that the first wall 11, the first bend and the second shield 2 enclose and form a first cleaning space 10 for the cleaning fluid to flow.

[0044] Specifically, the first working condition is the working condition of the semiconductor cleaning equipment, where the radial inner wall of the first wall 11 is used to block the liquid ejected by the rotating wafer 100. The second working condition is the cleaning condition of the radial inner wall of the first shield 1, where the cleaning liquid flows in the first cleaning space 10 to clean the residues on the radial inner wall of the first shield 1. The residues may be viscous liquid or acid / alkali gas crystals, etc.

[0045] Specifically, the top of the second shield 2 is attached to or abuts against the first bend, making the first cleaning space 10 a closed space except for the inlet and outlet openings of the cleaning fluid. This is beneficial to improving the flushing intensity of the cleaning fluid and the cleaning effect of the cleaning fluid on the radial inner wall surface. It can also prevent the cleaning fluid from overflowing from the top of the second shield 2, and prevent residues or cleaning fluid from contaminating the wafer cleaning chamber during the self-cleaning process of the shield. It can thoroughly clean the inner wall surface at various heights, with high cleaning efficiency and good cleaning effect.

[0046] Cleaning the radially inner wall surface of the first wall 11 does not occupy the vacuum suction cup and the transport arm, nor does it affect the blocking of droplet splashes on other inner wall surfaces besides the radially inner wall surface of the first wall 11, thus not affecting the continuous operation of the wafer cleaning process. When the first shield 1 and the second shield 2 are in the second operating condition, the radially inner wall surface of the second shield 2 can be used for the wafer cleaning process, or other shields higher than the top of the first shield 1 can be provided radially outside the first shield 1 for the wafer cleaning process.

[0047] Optionally, the cleaning solution used to clean viscous medicinal liquids or acid / alkali gas crystals can be any cleaning liquid such as deionized water. Optionally, the first protective cover 1 and the second protective cover 2 may only have vertical sections, or both may include vertical sections and converging sections, with the converging sections causing the horizontal cross-sectional area of ​​the enclosed space to gradually decrease from bottom to top. For example, both the first wall 11 and the second wall include vertical sections and converging sections. Optionally, the height difference between the top of the second protective cover 2 and the first bent section can be adjusted by raising and lowering the first protective cover 1 and the second protective cover 2, or by extending and retracting the wall in the height direction.

[0048] Optionally, the cleaning fluid entering the first cleaning space 10 may originate from the first bend, for example, the first bend includes the first liquid outlet component 12, or from the bottom wall 5, for example, the bottom wall 5 is provided with an opening for spraying cleaning fluid upwards, or from other locations suitable for setting nozzles or openings.

[0049] Optionally, after the first bending portion bends towards the direction closer to the wafer, it can adopt any structural form to constitute the cleaning space. It can be bent downwards, for example, towards the radially inner wall surface closer to the first wall 11, or it can not be bent downwards, for example, only bent horizontally towards the radially inner side. Optionally, an annular seal can be provided at the contact surface between the top of the second shield 2 and the first bending portion to improve the sealing effect of the first cleaning space 10 at the contact surface.

[0050] Optionally, the second shield 2 may not include a liquid outlet component, serving only to seal the first cleaning space 10. Alternatively, it may include a liquid outlet component to work with other structures to clean its own radially inner wall surface. For example, the second shield 2 may include a second wall and a second liquid outlet component. The second wall has a second cleaning fluid flow pipe connected to the second liquid outlet component inside. The second liquid outlet component is located at the top of the second wall and bends towards the radially inner wall surface of the second wall. The top of the second shield 2 refers to the area at the top of the second shield 2. The top of the second shield 2 can be the top of the second wall or the outer wall of the second liquid outlet component. Optionally, the second shield 2 and the first shield 1 may have the same or different structures, except for differences in height and radial position.

[0051] In this embodiment of the semiconductor cleaning shield device, the top of the second shield 2 is attached to the first bend to form a first cleaning space 10, which helps to improve the scouring intensity of the cleaning fluid and the cleaning effect of the semiconductor cleaning shield device. At the same time, it can improve the consistency and stability of the cleaning effect. During the self-cleaning process of the shield, it prevents residues or cleaning fluid from overflowing or splashing and contaminating the wafer cleaning chamber. The cleaning of the radial inner wall of the first wall 11 does not occupy the vacuum suction cup and the conveying arm, and will not affect other radial inner wall surfaces, which can ensure the continuous high quality of the wafer cleaning process. The shield cleaning has little impact on the throughput of the machine. The self-cleaning of the semiconductor cleaning shield device does not require manual wiping, which can improve the self-cleaning efficiency and the automation level of the semiconductor cleaning equipment.

[0052] In some embodiments, such as Figure 1 and Figure 2 As shown, the first bending part bends toward the radial inner wall surface close to the first wall 11. The first bending part includes a first liquid outlet component 12. The first wall 11 is provided with a first cleaning liquid flow pipe 13 connected to the first liquid outlet component 12. In the second working condition, the first liquid outlet 120 of the first liquid outlet component 12 sprays cleaning liquid into the first cleaning space 10.

[0053] The cleaning fluid sprayed from the first liquid outlet component 12 can clean the radial inner wall surface from top to bottom under the action of gravity, which helps to improve the flushing intensity of the cleaning fluid, improve the cleaning effect of the cleaning fluid on the radial inner wall surface, and improve the consistency and stability of the cleaning effect.

[0054] Specifically, the first cleaning fluid flow pipe 13 is located inside the first wall 11, which can improve space utilization, stabilize the cleaning fluid flow, and avoid introducing defect sources by setting up additional pipes or excessive pipe bends. For example, impurities may be deposited at the bends of the pipes. The deposited impurities are carried by the cleaning fluid to the inner wall and then splashed onto the wafer surface during the wafer cleaning process.

[0055] In this embodiment, the first cleaning fluid flow pipe 13 is located inside the first wall 11, which can improve space utilization, stabilize the cleaning fluid flow, and avoid introducing defects by setting up additional pipes or excessive pipe bends.

[0056] In some embodiments, such as Figure 4As shown in (a1) or (a2), the first shield 1 and the second shield 2 can also be in a zero-condition. In the zero-condition, the top of the second shield 2 is attached to the first liquid outlet component 12, so that the first wall 11, the first liquid outlet component 12, and the second shield 2 enclose the first cleaning space 10. However, the first liquid outlet 120 of the first liquid outlet component 12 does not spray cleaning fluid into the first cleaning space 10. The zero-condition is an idle condition, a standby condition, or a transfer condition, etc. In this condition, the top of the second shield 2 is attached to the first liquid outlet component 12, which can prevent dust and other contaminants from adhering to the radial inner wall surface of the first wall 11 during idle, standby, or transfer processes, thereby reducing the risk of contaminants being transferred and contaminating the wafer cleaning chamber or the wafer during the wafer cleaning process.

[0057] Optionally, whether the first outlet 120 sprays cleaning fluid can be achieved by opening or closing the first outlet 120, by switching the first cleaning fluid flow pipeline 13 on or off, or by switching the water pump or other drive components in the cleaning fluid supply pipeline on or off.

[0058] In some embodiments, the first shield 1 is liftable and / or the second shield 2 is liftable.

[0059] If the first shield 1 can be raised and lowered while the second shield 2 is fixed, in the initial state, the top of the second shield 2 is attached to the first liquid outlet component 12 and the first liquid outlet 120 does not spray out cleaning fluid. The first shield 1 can be raised to switch from the zero condition to the first condition. In the first condition, the first shield 1 is lowered until the top of the second shield 2 is attached to the first liquid outlet component 12 and the first liquid outlet 120 sprays out cleaning fluid, which can switch from the first condition to the second condition. At this time, other shields that do not affect the wafer cleaning process should be located on the radial outside of the first shield 1.

[0060] If the second shield 2 can be raised and lowered while the first shield 1 remains fixed, in the initial state, the top of the second shield 2 is attached to the first liquid outlet component 12 and the first liquid outlet 120 does not spray out cleaning fluid. The second shield 2 can be lowered to switch from the zero condition to the first condition. In the first condition, the second shield 2 rises until the top of the second shield 2 is attached to the first liquid outlet component 12 and the first liquid outlet 120 sprays out cleaning fluid, which can switch from the first condition to the second condition. At this time, other shields that do not affect the wafer cleaning process can be the second shield 2 or located on the radial inner side of the second shield 2.

[0061] In some embodiments, such as Figure 1 and Figure 2 As shown, the semiconductor cleaning shield device also includes:

[0062] The bottom wall 5 includes a first opening 51 for liquid outflow. A first shield 1 and a second shield 2 are both provided on the bottom wall 5. The first opening 51 is located radially between the first shield 1 and the second shield 2. The first opening 51 can be selectively connected to a first discharge pipe 511 or a first recovery pipe 512.

[0063] The first protective cover 1 and / or the second protective cover 2 can penetrate the bottom wall 5 to achieve a lifting function. In the first operating condition, the first opening 51 is connected to the first recovery pipe 512 to recover the liquid ejected from the rotating wafer, thereby reducing production costs. In the second operating condition, the first opening 51 is connected to the first discharge pipe 511 to discharge and treat the waste liquid after cleaning.

[0064] This embodiment can be selectively connected to the first discharge pipeline 511 or the first recovery pipeline 512 through the first opening 51, and can switch the downstream pipeline according to the working conditions and production needs, thereby improving the adaptability of the semiconductor cleaning shield device to the production scenario.

[0065] In some embodiments, such as Figure 2 and Figure 3 As shown, along the first direction x, the cross-sectional dimension of the first cleaning fluid flow pipe 13 is smaller than the thickness dimension of the first wall 11. The first direction x can be the circumferential radial direction with the rotation center axis of the wafer 100 as the center.

[0066] The cross-sectional dimension of the first cleaning fluid flow pipe 13 is smaller than the thickness dimension of the first wall 11. That is, the first cleaning fluid flow pipe 13 is located inside the first wall 11, which can improve space utilization and make the cleaning fluid flow rate stable.

[0067] In some embodiments, such as Figure 3 As shown, the first cleaning fluid circulation pipeline 13 includes a plurality of circulation channels 130 arranged at intervals along the circumference. The main body of the circulation channel 130 extends along the height direction. The first liquid outlet component 12 includes a plurality of first liquid outlets 120 arranged at intervals along the circumference. The plurality of circulation channels 130 and the plurality of first liquid outlets 120 are arranged in a one-to-one correspondence.

[0068] This embodiment, by setting multiple flow channels 130, can perform more comprehensive and thorough cleaning of the radial inner wall surface of the first wall 11; the multiple flow channels 130 can also achieve a redundant design, so that even if a certain flow channel 130 is partially or completely blocked, a good cleaning effect of the inner wall can still be achieved.

[0069] In some embodiments, the flow channel 130 is a circular through hole with a diameter ranging from 1 to 2 mm, and the thickness of the first wall 11 ranges from 3 to 4 mm.

[0070] In some embodiments, the circumferential angle between any two adjacent flow channels 130 is equal and is 5°, and the first wall 11 is provided with 72 flow channels 130.

[0071] In some embodiments, such as Figure 3 As shown, the bottom of the interior of the first wall 11 is provided with an annular liquid supply pipe 110 that connects to multiple flow channels 130.

[0072] The annular supply pipe 110 is connected to the cleaning fluid source. A one-way valve 111 is provided between the annular supply pipe 110 and the cleaning fluid source. The one-way valve 111 is configured to allow the cleaning fluid to flow unidirectionally from the cleaning fluid source to the annular supply pipe 110.

[0073] In this embodiment, the annular liquid supply pipe 110, in conjunction with multiple flow channels 130, can improve the stability of the cleaning fluid supply, and the one-way valve 111 can prevent the cleaning fluid in the flow channels 130 from flowing back when the protective cover is cleaned.

[0074] In some embodiments, the annular liquid supply pipe 110 may be selectively connected to a drying gas source, enabling the radially inner wall surface of the first wall 11 to be dried by the drying gas after the second cleaning cycle, so that the first shield can be restored to a usable state more quickly. The drying gas source may be used to provide drying nitrogen or the like.

[0075] In some embodiments, such as Figure 1 and Figure 2 As shown, the semiconductor cleaning shield device also includes:

[0076] The third shield 3 is located radially outside the first shield 1 and spaced apart from the first shield 1. The third shield 3 is annular and coaxially surrounds the wafer 100. The third shield 3 includes a third wall 31 and a third bend. The third bend is located at the top of the third wall 31 and bends toward the direction close to the wafer. The height difference between the top of the first shield 1 and the third bend is adjustable so that the third shield 3 and the first shield 1 can switch between a third working condition and a fourth working condition.

[0077] In the third operating condition, the wafer 100 is located between the third bend and the first shield 1 along the height direction. The radial inner side of the third wall 31 is used to block the droplets thrown out by the rotating wafer 100. In the fourth operating condition, the top of the first shield 1 is attached to the third bend so that the third wall 31, the third bend and the first shield 1 enclose a second cleaning space for the cleaning fluid to flow. The third operating condition is independent of the second operating condition, and the fourth operating condition is independent of the first operating condition.

[0078] The third shield 3 and the first shield 1 can also be in the zero condition. The relationship between the third shield 3 and the first shield 1 is the same as the relationship between the first shield 1 and the second shield 2. The height adjustment mechanism, the condition switching mechanism, the cleaning fluid source and the wafer continuous cleaning mechanism will not be described in detail here.

[0079] The top of the first protective cover 1 is the area at the top of the first protective cover 1. The top of the first protective cover 1 can be the top of the first wall 11 or the first bend.

[0080] In the third operating condition, the wafer 100 is located between the third bend and the first shield 1 along the height direction, that is, the wafer 100 is located between the highest point of the third bend and the first shield 1 along the height direction. Depending on the bending method of the first bend or the position of the highest point, the highest point of the first shield 1 can be the top of the first wall 11 or the first bend. If the first bend bends upward and then downward at the top of the first wall 11, then the first bend is at least partially higher than the top of the first wall 11, and the first bend constitutes the highest point of the first shield 1. If the first bend bends horizontally radially inward at the top of the first wall 11, then both the top of the first wall 11 and the first bend constitute the highest point of the first shield 1. If the first bend bends directly downward at the top of the first wall 11, then the top of the first wall 11 constitutes the highest point of the first shield 1.

[0081] Optionally, the third bend bends towards the radially inner sidewall of the third wall 31. The third bend includes a third liquid outlet component 32. The third wall 31 has a third cleaning fluid flow pipe 33 connected to the third liquid outlet component 32 inside. In the second operating condition, the third liquid outlet 320 of the third liquid outlet component 32 sprays cleaning fluid into the second cleaning space. Optionally, the third protective cover 3 and the first protective cover 1 can have the same structure except for the difference in height and radial position. The structural layout of the third cleaning fluid flow pipe 33 inside the third wall 31 can also be consistent with the first cleaning fluid flow pipe 13.

[0082] When the first shield 1 and the second shield 2 are in the second operating condition, the third shield 3 and the first shield 1 can be in the third operating condition. When the first shield 1 and the second shield 2 are in the first operating condition, the third shield 3 and the first shield 1 can be in the fourth operating condition, thereby simultaneously performing wafer cleaning and shield inner wall cleaning, which can significantly improve production efficiency. Since the cleaning platform 101 and the wafer 100 are arranged on the central axis and only one set is provided, the first and third operating conditions are mutually exclusive, but the second and fourth operating conditions can be performed simultaneously.

[0083] In some embodiments, such as Figure 1 and Figure 2As shown, the third shield 3 is provided on the bottom wall 5. The third shield 3 penetrates the bottom wall 5 and can be raised and lowered. The bottom wall 5 includes a second opening 52 for liquid outflow. The second opening 52 is located radially between the third shield 3 and the first shield 1. The second opening 52 can be selectively connected to the second discharge pipe 521 or the second recovery pipe 522.

[0084] In some embodiments, such as Figure 1 and Figure 2 As shown, the semiconductor cleaning shield device also includes:

[0085] The fourth shield 4 is located radially outside the third shield 3 and spaced apart from the third shield 3. The fourth shield 4 is annular and coaxially surrounds the wafer 100. The fourth shield 4 includes a fourth wall 41 and a fourth liquid outlet component 42. The fourth wall 41 is provided with a fourth cleaning fluid flow pipe 43 connected to the fourth liquid outlet component 42. The fourth liquid outlet component 42 is located at the top of the fourth wall 41 and bends toward the direction close to the wafer 100. The height difference between the top of the third shield 3 and the fourth liquid outlet component 42 is adjustable so that the fourth shield 4 and the third shield 3 can switch between the fifth and sixth working conditions.

[0086] In the fifth operating condition, the wafer 100 is located between the fourth liquid outlet component 42 and the third shield 3 along the height direction. The radial inner side wall of the fourth wall 41 is used to block the liquid droplets thrown out by the rotating wafer 100. In the sixth operating condition, the top of the third shield 3 is attached to the fourth liquid outlet component 42 so that the fourth wall 41, the fourth liquid outlet component 42 and the third shield 3 enclose a third cleaning space for the flow of cleaning fluid. The fourth liquid outlet 420 of the fourth liquid outlet component 42 sprays cleaning fluid into the third cleaning space. The fifth operating condition is independent of the second and fourth operating conditions, and the sixth operating condition is independent of the first and third operating conditions.

[0087] The fourth shield 4 and the third shield 3 can also be in the zero condition. The relationship between the fourth shield 4 and the third shield 3 is the same as that between the fourth shield 4 and the third shield 3. The height adjustment mechanism, the condition switching mechanism, the cleaning fluid source and the wafer continuous cleaning mechanism will not be described in detail here.

[0088] The top of the third shield 3 is the area at the top of the third shield 3. The top of the third shield 3 can be the top of the third wall 31 or the third bend. In the fifth operating condition, the wafer 100 is located between the fourth liquid outlet component 42 and the third shield 3 along the height direction, that is, the wafer 100 is located between the highest point of the fourth liquid outlet component 42 and the third shield 3 along the height direction. Optionally, the fourth bend bends towards the radial inner wall surface of the fourth wall 41. The fourth bend includes the fourth liquid outlet component 42. The fourth wall 41 is provided with a fourth cleaning fluid flow pipe 43 connected to the fourth liquid outlet component 42. In the second operating condition, the fourth liquid outlet 420 of the fourth liquid outlet component 42 sprays cleaning fluid into the third cleaning space. Optionally, the fourth shield 4 and the first shield 1 can have the same structure except for the difference in height and radial position. The structural layout of the fourth cleaning fluid flow pipe 43 inside the fourth wall 41 can also be consistent with the first cleaning fluid flow pipe 13.

[0089] When the first shield 1 and the second shield 2 are in the second operating condition and / or the third shield 3 and the first shield 1 are in the fourth operating condition, the fourth shield 4 and the third shield 3 can be in the fifth operating condition. When the first shield 1 and the second shield 2 are in the first operating condition or the third shield 3 and the first shield 1 are in the third operating condition, the fourth shield 4 and the third shield 3 can be in the sixth operating condition, thereby simultaneously performing wafer cleaning and shield inner wall cleaning, which can significantly improve production efficiency. Since the cleaning platform 101 and the wafer 100 are set on the central axis and only one set is set, the fifth operating condition is mutually exclusive with the first and third operating conditions, but the sixth operating condition, the second and fourth operating conditions can be performed simultaneously.

[0090] In some embodiments, such as Figure 1 and Figure 2 As shown, the fourth shield 4 is provided on the bottom wall 5, the fourth shield 4 penetrates the bottom wall 5 and the fourth shield 4 can be raised and lowered, the bottom wall 5 includes a third opening 53 for liquid outflow, the third opening 53 is located radially between the fourth shield 4 and the third shield 3, and the third opening 53 can be selectively connected to the third discharge pipe 531 or the third recovery pipe 532.

[0091] In the wafer cleaning process, the types of chemicals flowing through the first opening 51, the second opening 52, and the third opening 53 can be the same or different. For example, any two of the three openings can be used to collect the first type of chemical solution, and the other opening can be used to collect the second type of chemical solution.

[0092] Secondly, this disclosure also proposes a semiconductor cleaning device, such as... Figures 1 to 4 As shown, it includes:

[0093] Cleaning platform 101, used to hold wafer 100, is rotatable; and

[0094] The semiconductor cleaning shield device of the above embodiment is disposed radially outside the cleaning platform 101. The cleaning platform 101 may include a vacuum suction cup, etc.

[0095] The semiconductor cleaning equipment also includes a liquid conveying arm 6. During the wafer cleaning process, the cleaning platform 101 drives the wafer 100 to rotate at high speed. The cleaning solution is sprayed onto the wafer surface through the liquid conveying arm 6 to clean the wafer. The sprayed solution falls onto the radial inner wall of the first shield 1, the third shield 3, or the fourth shield 4, and is recovered or discharged through the first opening 51, the second opening 52, or the third opening 53.

[0096] The semiconductor cleaning equipment of this embodiment has a self-cleaning function in its semiconductor cleaning shield device. The self-cleaning effect of the semiconductor cleaning shield device is good, and the consistency and stability of the cleaning effect are high. It can avoid the contamination of the wafer cleaning chamber by residues or cleaning fluid. When the semiconductor cleaning shield device performs self-cleaning, it does not occupy the cleaning platform 101 and the liquid delivery arm 6, which can ensure the continuous high quality of the wafer cleaning process. By avoiding downtime during the shield cleaning process, the throughput of the machine is increased.

[0097] The semiconductor cleaning shield apparatus and semiconductor cleaning equipment provided in this disclosure have been described in detail above. Specific embodiments have been used to illustrate the principles and implementation methods of this disclosure. The descriptions of the embodiments above are only for the purpose of helping to understand the method and core ideas of this disclosure. It should be noted that those skilled in the art can make several improvements and modifications to this disclosure without departing from the principles of this disclosure, and these improvements and modifications also fall within the protection scope of the claims of this disclosure.

Claims

1. A semiconductor cleaning shield device, characterized in that, include: The first shield (1) is annular and coaxially surrounds the wafer (100). The first shield (1) includes a first wall (11) and a first bend. The first bend is located at the top of the first wall (11) and bends toward the direction close to the wafer (100). and The second shield (2) is located radially inside the first shield (1) and spaced apart from the first shield (1). The second shield (2) is annular and coaxially surrounds the wafer (100). The height difference between the top of the second shield (2) and the first bend is adjustable so that the first shield (1) and the second shield (2) can switch between the first working condition and the second working condition. In the first operating condition, the wafer (100) is located between the first bend and the second shield (2) along the height direction. The radial inner wall of the first wall (11) is used to block the droplets thrown out by the rotating wafer (100). In the second operating condition, the top of the second shield (2) is attached to the first bend, so that the first wall (11), the first bend and the second shield (2) enclose a first cleaning space (10) for the flow of cleaning fluid. The first cleaning space (10) is a closed space except for the inlet and outlet openings of the cleaning fluid. The cleaning fluid is used to clean the wall surrounding the first cleaning space (10).

2. The semiconductor cleaning shield device according to claim 1, characterized in that, The first protective cover (1) is liftable and / or the second protective cover (2) is liftable.

3. The semiconductor cleaning shield device according to claim 1, characterized in that, Also includes: The bottom wall (5) includes a first opening (51) for liquid outflow, the first shield (1) and the second shield (2) are both provided on the bottom wall (5), the first opening (51) is located between the first shield (1) and the second shield (2), and the first opening (51) is optionally connected to a first discharge pipe (511) or a first recovery pipe (512).

4. The semiconductor cleaning shield device according to claim 1, characterized in that, The first bending part bends toward the radial inner wall surface close to the first wall (11). The first bending part includes a first liquid outlet component (12). The first wall (11) is provided with a first cleaning fluid flow pipe (13) connected to the first liquid outlet component (12). In the second working condition, the first liquid outlet (120) of the first liquid outlet component (12) sprays cleaning fluid into the first cleaning space (10).

5. The semiconductor cleaning shield device according to claim 4, characterized in that, Along the first direction (x), the cross-sectional dimension of the first cleaning fluid flow pipe (13) is smaller than the thickness dimension of the first wall (11).

6. The semiconductor cleaning shield device according to claim 4, characterized in that, The first cleaning fluid flow pipeline (13) includes a plurality of flow channels (130) arranged circumferentially. The main body of the flow channel (130) extends along the height direction. The first liquid outlet component (12) includes a plurality of first liquid outlets (120) arranged circumferentially. The plurality of flow channels (130) and the plurality of first liquid outlets (120) are arranged one-to-one.

7. The semiconductor cleaning shield device according to claim 6, characterized in that, The circumferential angle interval between any two adjacent flow channels (130) is equal and is 5°.

8. The semiconductor cleaning shield apparatus according to claim 6, characterized in that, The bottom of the first wall (11) is provided with an annular liquid supply pipe (110) that is connected to a plurality of flow channels (130). The annular supply pipe (110) is connected to a cleaning fluid source, and a one-way valve (111) is provided between the annular supply pipe (110) and the cleaning fluid source. The one-way valve (111) is configured to allow the cleaning fluid to flow unidirectionally from the cleaning fluid source to the annular supply pipe (110); and / or The annular liquid supply pipe (110) can be selectively connected to a drying gas source.

9. The semiconductor cleaning shield apparatus according to any one of claims 1 to 8, characterized in that, Also includes: The third shield (3) is located radially outside the first shield (1) and spaced apart from the first shield (1). The third shield (3) is annular and coaxially surrounds the wafer (100). The third shield (3) includes a third wall (31) and a third bend. The third bend is located at the top of the third wall (31) and bends toward the direction close to the wafer (100). The height difference between the top of the first shield (1) and the third bend is adjustable so that the third shield (3) and the first shield (1) can switch between a third working condition and a fourth working condition. In the third operating condition, the wafer (100) is located between the third bend and the first shield (1) along the height direction. The radial inner wall of the third wall (31) is used to block the droplets thrown out by the rotating wafer (100). In the fourth operating condition, the top of the first shield (1) is attached to the third bend, so that the third wall (31), the third bend and the first shield (1) enclose a second cleaning space for the cleaning fluid to flow.

10. A semiconductor cleaning apparatus, characterized in that, include: A cleaning platform (101) is used to hold a wafer (100), and the cleaning platform (101) is rotatable; and The semiconductor cleaning shield device according to any one of claims 1 to 9 is disposed on the radial outer side of the cleaning platform (101).

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