Method, device and computer equipment for determining exposure auxiliary pattern

Abstract

The application relates to a determination method and device of an exposure auxiliary pattern and a computer device, comprising the following steps: acquiring a light intensity distribution curve of an anchor pattern and a target critical dimension of the anchor pattern under a target exposure dose; the target exposure dose is an upper limit value or a lower limit value of a standard exposure dose range; determining a target light intensity threshold according to the target critical dimension and the light intensity distribution curve; performing photolithography simulation on an initial layout pattern to obtain light intensity distribution data; determining a hot spot region on the initial layout pattern based on the target light intensity threshold and the light intensity distribution data; the initial layout pattern comprises a main pattern and an initial auxiliary pattern, and the initial auxiliary pattern is used for optical proximity correction of the main pattern; and the initial auxiliary pattern located in the hot spot region is modified to obtain an exposure auxiliary pattern. The exposure auxiliary pattern obtained by the determination method of the exposure auxiliary pattern provided by the application will not be exposed in the subsequent photolithography process, thereby improving product yield.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a method, apparatus, and computer device for determining exposure auxiliary patterns. Background Technology

[0002] In photolithography, to make the actual wafer pattern closely resemble the mask pattern, scattering bars are added between the main pattern. However, in practice, these scattering bars risk being exposed, resulting in an excessively small process window. Summary of the Invention

[0003] Therefore, it is necessary to provide a method, apparatus, and computer device for determining an exposure assist pattern that can prevent the exposure assist pattern from being exposed.

[0004] In a first aspect, this application provides a method for determining an exposure-aiding graphic, comprising:

[0005] Obtain the light intensity distribution curve of the anchor pattern, and the target key size of the anchor pattern under the target exposure dose; the target exposure dose is the upper or lower limit of the standard exposure dose range;

[0006] Based on the target critical dimensions and the light intensity distribution curve, determine the target light intensity threshold;

[0007] Photolithography simulation was performed on the initial layout pattern to obtain light intensity distribution data;

[0008] Based on the target light intensity threshold and the light intensity distribution data, hotspot regions on the initial map pattern are determined; the initial map pattern includes a main pattern and an initial auxiliary pattern, and the initial auxiliary pattern is used to perform optical proximity correction on the main pattern.

[0009] The initial auxiliary graphic located in the hotspot area is corrected to obtain the exposure auxiliary graphic.

[0010] In one embodiment, determining the target light intensity threshold based on the target key size and the light intensity distribution curve includes:

[0011] Determine the two intersection points of the straight line parallel to the horizontal axis of the light intensity distribution curve and the light intensity distribution curve;

[0012] If the absolute value of the difference in the horizontal coordinates between two intersection points is equal to the target critical dimension, the vertical coordinate value of one of the intersection points is determined as the target light intensity threshold.

[0013] In one embodiment, the light intensity distribution data includes the light intensity of each region on the initial layout graphic;

[0014] The step of determining the hotspot region on the initial map based on the target light intensity threshold and the light intensity distribution data includes:

[0015] When the target exposure dose is the upper limit of the standard exposure dose range, the area with light intensity greater than the target light intensity threshold is defined as the hot spot area;

[0016] When the target exposure dose is the lower limit of the standard exposure dose range, the area with light intensity less than the target light intensity threshold is defined as the hot spot area.

[0017] In one embodiment, the step of correcting the initial auxiliary graphic located in the hotspot area to obtain an exposure auxiliary graphic includes:

[0018] Obtain distance information between the target auxiliary graphic and the target main graphic; the target auxiliary graphic is the initial auxiliary graphic located in the hotspot area, and the target main graphic is the main graphic adjacent to the target auxiliary graphic;

[0019] The size of the target auxiliary graphic is adjusted according to the distance information to obtain the exposure auxiliary graphic.

[0020] In one embodiment, obtaining the distance information between the target auxiliary graphic and the target main graphic includes:

[0021] Obtain the first distance between the target auxiliary graphic and the first target main graphic;

[0022] Obtain a second distance between the target auxiliary graphic and the second target main graphic; the first target main graphic and the second target main graphic are respectively the target main graphics located on opposite sides of the target auxiliary graphic.

[0023] In one embodiment, adjusting the size of the target auxiliary graphic based on the distance information to obtain the exposure auxiliary graphic includes:

[0024] The length of the target auxiliary graphic is changed according to the distance information to obtain the exposure auxiliary graphic.

[0025] In one embodiment, the step of changing the length of the target auxiliary graphic based on the distance information to obtain the exposure auxiliary graphic includes:

[0026] Obtain the third distance between the first target main image and the second target main image;

[0027] If the third distance is less than the preset distance, the length of the target auxiliary graphic is changed according to the first distance and the second distance to obtain the exposure auxiliary graphic.

[0028] In one embodiment, the step of changing the length of the target auxiliary pattern according to the first distance and the second distance to obtain the exposure auxiliary pattern includes:

[0029] If the first distance and the second distance are not equal, remove the portion of the graphic located at both ends of the target auxiliary graphic along a direction parallel to the long side of the target auxiliary graphic to obtain the exposure auxiliary graphic;

[0030] When the first distance and the second distance are equal, the portion of the graphic located in the middle region of the target auxiliary graphic is removed, and the target auxiliary graphic is divided into two exposure auxiliary graphics.

[0031] Secondly, this application also provides an apparatus for determining an exposure auxiliary pattern, the apparatus comprising:

[0032] The light intensity threshold determination module is used to acquire the light intensity distribution curve of the anchor pattern and the target key size of the anchor pattern under the target exposure dose; the target exposure dose is the upper or lower limit of the standard exposure dose range; and the target light intensity threshold is determined based on the target key size and the light intensity distribution curve.

[0033] A hotspot region determination module is used to perform photolithographic simulation on the initial layout pattern to obtain light intensity distribution data; and to determine hotspot regions on the initial layout pattern based on the target light intensity threshold and the light intensity distribution data; the initial layout pattern includes a main pattern and an initial auxiliary pattern, and the initial auxiliary pattern is used to perform optical proximity correction on the main pattern;

[0034] The auxiliary graphic correction module is used to correct the initial auxiliary graphic located in the hot spot area to obtain the exposure auxiliary graphic.

[0035] Thirdly, this application also provides a computer device, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to implement the steps of the method provided in any of the above embodiments.

[0036] An unexpected benefit of this application is that by first obtaining the light intensity distribution curve of the anchor pattern and the target critical size of the anchor pattern under the target exposure dose, and using the boundary of the standard exposure dose range as the target exposure dose, the target light intensity threshold is reverse-calibrated using the target critical size and light intensity distribution curve corresponding to the target exposure dose. Then, based on the target light intensity threshold, lithography simulation is performed on the initial layout pattern to scan out hotspot areas. Without establishing a complex finite element method (FEM) lithography simulation model, the exposure of the initial layout pattern under process boundary conditions can be directly simulated, enabling early risk identification of the process window, shortening the chip design cycle. Subsequently, the initial auxiliary pattern in the hotspot area is corrected to prevent the initial auxiliary pattern from being exposed, thus improving product yield. Attached Figure Description

[0037] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0038] Figure 1 This is a flowchart of a method for determining an exposure-aid pattern provided in one embodiment;

[0039] Figure 2 A light intensity distribution curve provided for one embodiment;

[0040] Figure 3 This is a schematic diagram illustrating the positional relationship between a target auxiliary graphic and a target main graphic, provided in one embodiment.

[0041] Figure 4A This is a schematic diagram showing the target auxiliary graphic not being adjusted when the first distance is less than the second distance, as provided in one embodiment.

[0042] Figure 4B A schematic diagram of the adjusted target auxiliary graphic provided in one embodiment when the first distance is less than the second distance;

[0043] Figure 5A This is a schematic diagram showing the target auxiliary graphic not being adjusted when the first distance is greater than the second distance, as provided in one embodiment.

[0044] Figure 5B This is a schematic diagram of an adjusted target auxiliary graphic provided in one embodiment when the first distance is greater than the second distance;

[0045] Figure 6AA schematic diagram of the target auxiliary graphic without adjustment when the first distance is equal to the second distance, as provided in one embodiment;

[0046] Figure 6B A schematic diagram of the adjusted target auxiliary graphic provided in one embodiment, where the first distance is equal to the second distance;

[0047] Figure 7 This is a structural block diagram of an exposure auxiliary pattern determination device in one embodiment;

[0048] Figure 8 This is an internal structural diagram of a computer device in one embodiment. Detailed Implementation

[0049] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0050] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0051] In graphic design, there are often densely distributed graphics and sparse graphics. The process windows for dense and sparse graphics differ, which leads to a smaller common process window. To reduce process differences caused by varying graphic densities, scattering bars are typically inserted around sparse graphics. These scattering bars influence the light intensity distribution of nearby graphics during exposure, but they themselves are not exposed. However, the applicant has found that in practical applications, scattering bars also pose a risk of being exposed.

[0052] Based on this, such as Figure 1 As shown, this application provides a method for determining an exposure auxiliary pattern, including steps S100-S500.

[0053] S100, obtain the light intensity distribution curve of the anchor pattern, and the target critical dimensions of the anchor pattern under the target exposure dose.

[0054] An anchor pattern serves as a reference benchmark for calibrating and determining critical parameters in the photolithography process, such as the target light intensity threshold involved in this application. The anchor pattern can be a simple graphic with a known shape and size, such as a line. The light intensity distribution curve is a curve showing the change in light intensity with wafer position. The standard exposure dose range can be understood as the range of exposure dose variations allowed to accurately transfer the pattern on the mask onto the wafer. The target exposure dose is the upper or lower limit of the standard exposure dose range, depending on the type of photoresist used. When the photoresist type is positive, the target exposure dose is the upper limit of the standard exposure dose range; when the photoresist type is negative, the target exposure dose is the lower limit of the standard exposure dose range. The target critical dimension refers to the critical dimension at which the anchor pattern is transferred to the wafer under the target exposure dose.

[0055] S200 determines the target light intensity threshold based on the target's critical dimensions and light intensity distribution curve.

[0056] The light intensity distribution curve is a two-dimensional, parabolic curve, where the horizontal axis represents distance and the vertical axis represents light intensity. A horizontal straight line can be drawn, intersecting the light intensity distribution curve at two points. The distance between these two intersection points represents the critical dimension when the anchor pattern is transferred to the wafer. When the distance between these two intersection points is exactly the target critical dimension, the light intensity corresponding to this horizontal line can be used as the target light intensity threshold.

[0057] S300 performs photolithography simulation on the initial pattern to obtain light intensity distribution data.

[0058] The initial layout pattern includes a main pattern and initial auxiliary patterns. The main pattern is the pattern to be exposed. The initial auxiliary patterns are used for optical proximity correction of the main pattern. The size of the initial auxiliary patterns on the initial layout pattern, the distance between the initial auxiliary patterns and the main pattern, and the distance between adjacent initial auxiliary patterns can be set based on empirical rules. Light intensity distribution data can include the light intensity of each region on the initial layout pattern.

[0059] S400 determines hotspot regions on the initial map based on the target light intensity threshold and light intensity distribution data.

[0060] Hotspot areas can be understood as regions where patterns are not expected to be exposed. By comparing the various intensities in the light intensity distribution data with the target light intensity threshold, it is possible to determine which areas of the initial image are at risk of being exposed.

[0061] The S500 corrects the initial auxiliary graphic located in the hotspot area to obtain the exposure auxiliary graphic.

[0062] The size of the initial auxiliary graphic located in the hotspot area can be corrected to obtain an exposure auxiliary graphic. The final exposure auxiliary graphic should include the resized target auxiliary graphic and the initial auxiliary graphic that was not exposed.

[0063] In this embodiment, the light intensity distribution curve of the anchor pattern and the target critical size of the anchor pattern under the target exposure dose are first obtained. The boundary of the standard exposure dose range is used as the target exposure dose. The target light intensity threshold is then reverse-calibrated using the target critical size and light intensity distribution curve corresponding to the target exposure dose. Then, based on the target light intensity threshold, photolithography simulation is performed on the initial layout pattern to scan out hotspot areas. Without establishing a complex FEM model, the exposure of the initial layout pattern under process boundary conditions can be directly simulated, enabling early risk identification of the process window and shortening the chip design cycle. Subsequently, the initial auxiliary pattern in the hotspot area is corrected to prevent the initial auxiliary pattern from being exposed, thus improving product yield.

[0064] In one embodiment, step S200: determining the target light intensity threshold based on the target key size and light intensity distribution curve, including S210-S220.

[0065] S210, determine the two intersection points of the straight line parallel to the horizontal axis of the light intensity distribution curve and the light intensity distribution curve.

[0066] S220, when the absolute value of the difference in the horizontal coordinates between two intersection points is equal to the target critical dimension, the vertical coordinate value of one intersection point is determined as the target light intensity threshold.

[0067] like Figure 2 As shown, draw a straight line parallel to the horizontal axis of the light intensity distribution curve. This line intersects the curve at two points. If the absolute value of the difference in the horizontal coordinates between the two intersection points is exactly equal to the target's critical dimension, the vertical coordinate value of one of the intersection points is determined as the target light intensity threshold. In practical applications, a certain error range can be set. If the absolute value of the difference in the horizontal coordinates between the two intersection points falls within this error range, the vertical coordinate value corresponding to one intersection point can be determined as the target light intensity threshold.

[0068] In this embodiment, the target light intensity threshold is determined by reverse calibration using the light intensity distribution curve and the target key dimensions, which is simple to calculate.

[0069] In one embodiment, step S400: determining hotspot regions on the initial layout pattern based on the target light intensity threshold and light intensity distribution data includes: determining regions with light intensity greater than the target light intensity threshold as hotspot regions when the target exposure dose is the upper limit of the standard exposure dose range; and determining regions with light intensity less than the target light intensity threshold as hotspot regions when the target exposure dose is the lower limit of the standard exposure dose range.

[0070] In this embodiment, hotspot areas can be quickly determined by comparing the light intensity of each region on the initial map with the target light intensity threshold.

[0071] In one embodiment, step S500: correcting the initial auxiliary pattern located in the hot spot area to obtain an exposure auxiliary pattern, including S510-S520.

[0072] S510: Obtain distance information between the target auxiliary graphic and the target main graphic.

[0073] The target auxiliary graphic is the initial auxiliary graphic located in the hotspot area, and the target main graphic is the main graphic adjacent to the target auxiliary graphic. The distance information between the target auxiliary graphic and the target main graphic can be obtained based on the pre-set layout design parameters.

[0074] S520 adjusts the size of the target auxiliary graphic based on the distance information to obtain the exposure auxiliary graphic.

[0075] Based on the distance information between the target auxiliary graphic and the target main graphic, the size of the target auxiliary graphic can be cropped or reduced to obtain the exposure auxiliary graphic.

[0076] In this embodiment, by obtaining the distance information between the target auxiliary graphic and the target main graphic, the target auxiliary graphic can be optimized in a targeted manner based on the distance information to ensure that the exposure auxiliary graphic will not be exposed when photolithography is performed using the mask composed of the exposure auxiliary graphic and the main graphic.

[0077] In one embodiment, step S510: obtaining distance information between the target auxiliary graphic and the target main graphic includes steps S511-S512.

[0078] S511, obtain the first distance between the auxiliary target graphic and the main target graphic.

[0079] S512, obtain the second distance between the target auxiliary graphic and the second target main graphic.

[0080] The first and second target main graphics are located on opposite sides of the target auxiliary graphics, respectively. For ease of explanation, as... Figure 3As shown, the main graphic located on one side of the target auxiliary graphic 110 in the first direction can be designated as the first target main graphic 120, and the main graphic located on the other side of the target auxiliary graphic in the first direction can be designated as the second target main graphic 130. The target auxiliary graphic 110 is typically elongated, and the first direction is perpendicular to the long side of the target auxiliary graphic 110. The first distance between the target auxiliary graphic 110 and the first target main graphic 120 is denoted as S1, and the second distance between the target auxiliary graphic 110 and the second target main graphic 130 is denoted as S2.

[0081] In this embodiment, by obtaining the distance information between the target auxiliary graphic and the target main graphic, the positional relationship between the target auxiliary graphic and the target main graphic can be accurately determined.

[0082] In one embodiment, step S520: adjusting the size of the target auxiliary graphic according to the distance information to obtain the exposure auxiliary graphic includes the step of changing the length of the target auxiliary graphic according to the distance information to obtain the exposure auxiliary graphic.

[0083] It is understandable that the length of the target auxiliary image can be changed based on the distance information between the target main image and the target auxiliary image, for example, by reducing the length of the target auxiliary image, thereby obtaining the exposure auxiliary image.

[0084] In one embodiment, changing the length of the target auxiliary graphic based on distance information to obtain the exposure auxiliary graphic includes steps S521-S522.

[0085] S521, obtain the third distance between the first target main graphic and the second target main graphic.

[0086] After locating the position between the first target main graphic and the second target main graphic, the third distance between the first target main graphic and the second target main graphic can be obtained directly through software.

[0087] S522, when the third distance is less than the preset distance, the length of the target auxiliary pattern is changed according to the first distance and the second distance to obtain the exposure auxiliary pattern.

[0088] The preset distance refers to the distance between two main graphics that allows for the placement of two initial auxiliary graphics arranged side-by-side along the first direction. This preset distance can be determined based on layout design rules. It can be understood that a third distance less than the preset distance indicates the case where only one initial auxiliary graphic is placed between the two main graphics. In this case, the length of the target auxiliary graphic is changed according to the first and second distances to obtain the initial exposure graphic, specifically including steps S5221-S5222.

[0089] S5221, when the first distance and the second distance are not equal, remove the part of the graphic located at both ends of the target auxiliary graphic along the direction parallel to the long side of the target auxiliary graphic to obtain the exposure auxiliary graphic.

[0090] For example, such as Figure 4A As shown, when the first distance S1 is less than the second distance S2, the portion of the graphic located at both ends of the target auxiliary graphic can be removed to obtain the optimized exposure auxiliary graphic, as shown. Figure 4B As shown.

[0091] For example, such as Figure 5A As shown, when the first distance S1 is greater than the second distance S2, the portion of the graphic located at both ends of the target auxiliary graphic can be removed to obtain the exposure auxiliary graphic as shown. Figure 5B As shown.

[0092] S5222, when the first distance and the second distance are equal, remove the part of the graphic located in the middle area of ​​the target auxiliary graphic and divide the target auxiliary graphic into two exposure auxiliary graphics.

[0093] For example, such as Figure 6A As shown, when the first distance S1 is equal to the second distance S2, a portion of the graphic located in the middle area of ​​the target auxiliary graphic can be removed, dividing the target auxiliary graphic into two exposure auxiliary graphics, as shown. Figure 6B As shown.

[0094] Optionally, if the third distance is greater than or equal to the preset distance, that is, if two or more initial auxiliary graphics are set between adjacent main graphics, it is not necessary to compare the first distance and the second distance, and the operation of removing the part of the graphics located at both ends of the target auxiliary graphics can be performed directly.

[0095] The length of the removed portion of the graphic can be set based on experience, or a portion can be removed first and then the exposure test can be repeated until it is no longer exposed. This application does not impose any limitations on this embodiment.

[0096] In this embodiment, by obtaining a third distance between the first target main pattern and the second target main pattern, and comparing the third distance with a preset distance, if the third distance is less than the preset distance and the first distance and the second distance are not equal, it is determined that the target auxiliary pattern is used to improve the light intensity distribution during the photolithography of one of the main patterns. In this case, a portion of the pattern located at both ends of the target auxiliary pattern can be removed to obtain an exposure auxiliary pattern. If the third distance is less than the preset distance and the first distance and the second distance are equal, it is determined that the target auxiliary pattern is used to improve the light intensity distribution during the photolithography of both main patterns. In this case, a portion of the pattern located in the middle area of ​​the target auxiliary pattern can be removed, and the target auxiliary pattern can be divided into two exposure auxiliary patterns, thereby avoiding the phenomenon of the exposure auxiliary pattern being exposed during photolithography.

[0097] To better understand the method for determining the exposure auxiliary pattern in this application, a more specific embodiment is provided for illustration.

[0098] First, determine the process window design specifications based on the layout design requirements. The exposure dose can fluctuate by 9%, meaning the standard exposure dose range is 91%-109%. Taking the design of a dark field photomask as an example, an exposure dose of 109% can be used as the target exposure dose. The target critical dimension of the anchor pattern at the target exposure dose is 49.5. Figure 2 As shown, the corresponding light intensity is 0.1158 obtained from the light intensity distribution curve. 0.1158 can be used as the target light intensity threshold to perform an exposure test on the initial pattern, identifying 28 hotspot areas and determining the target auxiliary pattern.

[0099] Next, the first distance between the target auxiliary graphic and the first target main graphic is obtained, the second distance between the target auxiliary graphic and the second target main graphic is obtained, and the third distance between the first target main graphic and the second target main graphic is obtained. If the third distance is less than a preset distance and the first and second distances are not equal, the portion of the graphic located at both ends of the target auxiliary graphic is removed to obtain the exposure auxiliary graphic; if the third distance is less than the preset distance and the first and second distances are equal, the portion of the graphic located in the middle area of ​​the target auxiliary graphic is removed, dividing the target auxiliary graphic into two exposure auxiliary graphics.

[0100] In this embodiment, the light intensity distribution curve of the anchor pattern and the target critical size of the anchor pattern under the target exposure dose are first obtained. The boundary of the standard exposure dose range is used as the target exposure dose. The target light intensity threshold is then reverse-calibrated using the target critical size and light intensity distribution curve corresponding to the target exposure dose. Then, based on the target light intensity threshold, the initial layout pattern is simulated using photolithography to scan out hotspot areas. Without establishing a complex FEM model, the exposure of the initial layout pattern under process boundary conditions can be directly simulated, achieving early risk identification of the process window and shortening the chip design cycle. Furthermore, the distance information between the target auxiliary pattern and the target main pattern located in the hotspot area is obtained, and the size of the target auxiliary pattern is adjusted according to the distance information to obtain the exposure auxiliary pattern. This ensures that in the subsequent photolithography process, while ensuring that the exposed pattern is close to the main pattern, the exposure auxiliary pattern will not be exposed, improving product yield.

[0101] It should be understood that although the steps in the flowcharts of the above embodiments are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the above embodiments may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0102] Based on the same inventive concept, this application also provides an apparatus for determining exposure auxiliary patterns to implement the method for determining exposure auxiliary patterns described above. The solution provided by this apparatus is similar to the solution described in the above method; therefore, the specific limitations in one or more embodiments of the apparatus for determining exposure auxiliary patterns provided below can be found in the limitations of the method for determining exposure auxiliary patterns described above, and will not be repeated here.

[0103] In one exemplary embodiment, such as Figure 7 As shown, an exposure auxiliary pattern determination device is provided, including a light intensity threshold determination module 210, a hot spot area determination module 220, and an auxiliary pattern correction module 230.

[0104] The light intensity threshold determination module 210 is used to obtain the light intensity distribution curve of the anchor pattern and the target key size of the anchor pattern under the target exposure dose; the target exposure dose is the upper or lower limit of the standard exposure dose range; the target light intensity threshold is determined according to the target key size and the light intensity distribution curve.

[0105] The hot spot region determination module 220 is used to perform photolithography simulation on the initial layout pattern to obtain light intensity distribution data; based on the target light intensity threshold and light intensity distribution data, hot spot regions on the initial layout pattern are determined; the initial layout pattern includes a main pattern and an initial auxiliary pattern, and the initial auxiliary pattern is used to perform optical proximity correction on the main pattern;

[0106] The auxiliary graphic correction module 230 is used to correct the initial auxiliary graphic located in the hot spot area to obtain the exposure auxiliary graphic.

[0107] In one embodiment, the light intensity threshold determination module is further used to determine the two intersection points of the straight line parallel to the horizontal axis of the light intensity distribution curve and the light intensity distribution curve; if the absolute value of the difference between the horizontal coordinates of the two intersection points is equal to the target critical size, the vertical coordinate value of one intersection point is determined as the target light intensity threshold.

[0108] In one embodiment, the hotspot region determination module is further configured to determine a region with light intensity greater than a target light intensity threshold as a hotspot region when the target exposure dose is the upper limit of the standard exposure dose range; and to determine a region with light intensity less than a target light intensity threshold as a hotspot region when the target exposure dose is the lower limit of the standard exposure dose range.

[0109] In one embodiment, the auxiliary graphic correction module is further configured to obtain a first distance between the target auxiliary graphic and the first target main graphic; and to obtain a second distance between the target auxiliary graphic and the second target main graphic; wherein the first target main graphic and the second target main graphic are target main graphics located on opposite sides of the target auxiliary graphic.

[0110] In one embodiment, the auxiliary graphic correction module is further configured to change the length of the target auxiliary graphic based on distance information to obtain an exposure auxiliary graphic.

[0111] In one embodiment, the auxiliary graphic correction module is further configured to obtain a third distance between the first target main graphic and the second target main graphic; if the third distance is less than a preset distance, the length of the target auxiliary graphic is changed according to the first distance and the second distance to obtain an exposure auxiliary graphic.

[0112] In one embodiment, the auxiliary pattern correction module is further configured to remove portions of the pattern located at both ends of the target auxiliary pattern to obtain an exposure auxiliary pattern when the first distance and the second distance are not equal; and to remove portions of the pattern located in the middle region of the target auxiliary pattern to divide the target auxiliary pattern into two exposure auxiliary patterns when the first distance and the second distance are equal.

[0113] Each module in the aforementioned device for determining the exposure auxiliary pattern can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in or independent of the processor in a computer device, or stored in the memory of a computer device as software, so that the processor can call and execute the operations corresponding to each module.

[0114] In one exemplary embodiment, a computer device is provided, which may be a terminal, and its internal structure diagram may be as follows: Figure 8 As shown, the computer device includes a processor, memory, input / output interface, communication interface, display unit, and input device. The processor, memory, and input / output interface are connected via a system bus, and the communication interface, display unit, and input device are also connected to the system bus via the input / output interface. The processor provides computing and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage media. The input / output interface is used for exchanging information between the processor and external devices. The communication interface is used for wired or wireless communication with external terminals; wireless communication can be achieved through Wi-Fi, mobile cellular networks, Near Field Communication (NFC), or other technologies. When executed by the processor, the computer program implements a method for determining exposure-aided graphics. The display unit is used to form a visually visible image and can be a display screen, projection device, or virtual reality imaging device. The display screen can be an LCD screen or an e-ink screen. The input device of the computer device can be a touch layer covering the display screen, or buttons, trackballs, or touchpads set on the casing of the computer device, or external keyboards, touchpads, or mice, etc.

[0115] Those skilled in the art will understand that Figure 8 The structure shown is merely a block diagram of a portion of the structure related to the present application and does not constitute a limitation on the computer device to which the present application is applied. Specific computer devices may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0116] In one exemplary embodiment, a computer device is provided, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to perform the following steps:

[0117] Hotspot areas are determined based on preset exposure intensity and initial map graphics; the initial map graphics include multiple main graphics and multiple initial auxiliary graphics.

[0118] Obtain the distance information between the target auxiliary graphic and the target main graphic; the target auxiliary graphic is the initial auxiliary graphic located in the hotspot area, and the target main graphic is the main graphic adjacent to the target auxiliary graphic.

[0119] The size of the target auxiliary graphic is adjusted based on the distance information to obtain the exposure auxiliary graphic.

[0120] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon, the computer program performing the following steps when executed by a processor:

[0121] Hotspot areas are determined based on preset exposure intensity and initial map graphics; the initial map graphics include multiple main graphics and multiple initial auxiliary graphics.

[0122] Obtain the distance information between the target auxiliary graphic and the target main graphic; the target auxiliary graphic is the initial auxiliary graphic located in the hotspot area, and the target main graphic is the main graphic adjacent to the target auxiliary graphic.

[0123] The size of the target auxiliary graphic is adjusted based on the distance information to obtain the exposure auxiliary graphic.

[0124] In one embodiment, a computer program product is provided, including a computer program that, when executed by a processor, performs the following steps:

[0125] Hotspot areas are determined based on preset exposure intensity and initial map graphics; the initial map graphics include multiple main graphics and multiple initial auxiliary graphics.

[0126] Obtain the distance information between the target auxiliary graphic and the target main graphic; the target auxiliary graphic is the initial auxiliary graphic located in the hotspot area, and the target main graphic is the main graphic adjacent to the target auxiliary graphic.

[0127] The size of the target auxiliary graphic is adjusted based on the distance information to obtain the exposure auxiliary graphic.

[0128] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium. When executed, the computer program can include the processes of the embodiments of the above methods. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile memory and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, artificial intelligence (AI) processors, etc., and are not limited to these.

[0129] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features of the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0130] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A method for determining an exposure auxiliary pattern, characterized in that, include: Obtain the light intensity distribution curve of the anchor pattern, and the key dimensions of the anchor pattern under the target exposure dose; The target exposure dose is the upper or lower limit of the standard exposure dose range; Based on the target critical dimensions and the light intensity distribution curve, determine the target light intensity threshold; Photolithography simulation was performed on the initial layout pattern to obtain light intensity distribution data; Based on the target light intensity threshold and the light intensity distribution data, hotspot areas are determined on the initial map pattern; The initial layout graphic includes a main graphic and an initial auxiliary graphic, and the initial auxiliary graphic is used to perform optical proximity correction on the main graphic; Obtain a first distance between a target auxiliary graphic and a first target main graphic, and a second distance between the target auxiliary graphic and the second target main graphic; the target auxiliary graphic is the initial auxiliary graphic located in the hotspot area, and the target main graphic is the main graphic adjacent to the target auxiliary graphic; the first target main graphic and the second target main graphic are target main graphics located on opposite sides of the target auxiliary graphic, respectively. Obtain the third distance between the first target main image and the second target main image; When the third distance is less than the preset distance and the first distance and the second distance are not equal, the portion of the graphic located at both ends of the target auxiliary graphic is removed along a direction parallel to the long side of the target auxiliary graphic to obtain the exposure auxiliary graphic; If the third distance is less than the preset distance and the first distance and the second distance are equal, remove the portion of the graphic located in the middle area of ​​the target auxiliary graphic and divide the target auxiliary graphic into two exposure auxiliary graphics.

2. The method according to claim 1, characterized in that, The step of determining the target light intensity threshold based on the target key size and the light intensity distribution curve includes: Determine the two intersection points of the straight line parallel to the horizontal axis of the light intensity distribution curve and the light intensity distribution curve; If the absolute value of the difference in the horizontal coordinates between two intersection points is equal to the target critical dimension, the vertical coordinate value of one of the intersection points is determined as the target light intensity threshold.

3. The method according to claim 1, characterized in that, The light intensity distribution data includes the light intensity of each region on the initial map graphic; The step of determining the hotspot region on the initial map based on the target light intensity threshold and the light intensity distribution data includes: When the target exposure dose is the upper limit of the standard exposure dose range, the area with light intensity greater than the target light intensity threshold is defined as the hot spot area; When the target exposure dose is the lower limit of the standard exposure dose range, the area with light intensity less than the target light intensity threshold is defined as the hot spot area.

4. The method according to claim 1, characterized in that, The method further includes: If the third distance is greater than or equal to the preset distance, directly remove the portion of the graphic located at both ends of the target auxiliary graphic.

5. The method according to claim 1 or 4, characterized in that, The preset distance is the distance between two initial auxiliary graphics that are placed side by side along a first direction between the two main graphics, where the first direction is perpendicular to the long side of the target auxiliary graphic.

6. A device for determining an exposure auxiliary pattern, characterized in that, The device includes: The light intensity threshold determination module is used to acquire the light intensity distribution curve of the anchor pattern and the target key size of the anchor pattern under the target exposure dose; the target exposure dose is the upper or lower limit of the standard exposure dose range; and the target light intensity threshold is determined based on the target key size and the light intensity distribution curve. A hotspot region determination module is used to perform photolithographic simulation on the initial layout pattern to obtain light intensity distribution data; and to determine hotspot regions on the initial layout pattern based on the target light intensity threshold and the light intensity distribution data; the initial layout pattern includes a main pattern and an initial auxiliary pattern, and the initial auxiliary pattern is used to perform optical proximity correction on the main pattern; An auxiliary image correction module is used to obtain a first distance between a target auxiliary image and a first target main image, and a second distance between the target auxiliary image and the second target main image; obtain a third distance between the first target main image and the second target main image; when the third distance is less than a preset distance and the first distance and the second distance are not equal, remove portions of the image located at both ends of the target auxiliary image along a direction parallel to the long side of the target auxiliary image to obtain the exposure auxiliary image; when the third distance is less than a preset distance and the first distance and the second distance are equal, remove portions of the image located in the middle region of the target auxiliary image to divide the target auxiliary image into two exposure auxiliary images; Wherein, the target auxiliary graphic is the initial auxiliary graphic located in the hotspot area, and the target main graphic is the main graphic adjacent to the target auxiliary graphic; the first target main graphic and the second target main graphic are the target main graphics located on opposite sides of the target auxiliary graphic.

7. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that, When the processor executes the computer program, it implements the steps of the method according to any one of claims 1 to 5.

Images