Preparation method of epitaxial structure with micron holes and epitaxial structure

By growing a Si-doped 3D AlN layer on an AlN buffer layer and expanding the air gap using dry etching and electrochemical etching, the problem of total internal reflection between the AlN template and the sapphire substrate was solved, achieving efficient light extraction from deep ultraviolet LEDs and improving brightness.

CN121126979APending Publication Date: 2025-12-12ADVANCED ULTRAVIOLET OPTOELECTRONICS CO LTD
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Patent Information

Application Number
CN202511332501.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-09-18
Publication Date
2025-12-12

AI Technical Summary

Technical Problem

In the prior art, the refractive index difference between the AlN template and the sapphire substrate causes total internal reflection of photons at the interface, which reduces the light extraction efficiency of deep ultraviolet LEDs. Furthermore, large-scale air gaps are difficult to grow smoothly on the surface of the epitaxial layer, affecting the light extraction efficiency.

Method used

A Si-doped 3D AlN layer is grown on the surface of an AlN buffer layer. The nanoscale air gap is expanded to the micrometer scale through dry etching and electrochemical etching processes. By combining Si doping and controlled growth processes, a micrometer-sized porous structure with good conductivity is formed.

Benefits of technology

It significantly improves the light extraction efficiency of deep ultraviolet LEDs and enhances luminous brightness, especially with a brightness increase of approximately 32% within the ±37° range.

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Abstract

The invention relates to a preparation method of an epitaxial structure with micron holes and the epitaxial structure, and belongs to the technical field of epitaxial wafer manufacturing. Comprising the following steps: sequentially growing an AlN buffer layer, a Si-doped 3D AlN layer containing a nano-scale air gap, a high-temperature AlN layer, an n-type AlGaN layer, a multi-quantum well active layer, an electron barrier layer, a p-type AlGaN layer and a p-type GaN contact layer on the surface of a substrate; etching a region corresponding to the n electrode in the epitaxial structure until the air gap is exposed; growing a SiO2 protective layer; enlarging a nano-scale air gap to a micron-scale air gap through electrochemical etching; and preparing a p electrode metal layer on the p-type GaN contact layer, and preparing an n electrode metal layer on the micron-level air gap of the Si-doped 3D AlN layer to obtain an epitaxial structure with micron holes. According to the invention, the nanoscale fusiform air gap is expanded to the micron scale by using the dry etching process and the electrochemical etching process, so that the light extraction efficiency is improved.
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