Substrate processing method, substrate processing apparatus, and storage medium

Abstract

The substrate processing method includes a substrate holding step, a catalyst supplying step, a first cleaning step, a heating step, and a second cleaning step. In the substrate holding step, the substrate is held. In the catalyst supply step, a catalyst liquid is supplied to the upper surface of the substrate to supply a catalyst. In the first cleaning step, during or after the catalyst supply step, a first cleaning liquid is supplied to the lower surface of the substrate to remove the catalyst liquid spreading from the upper surface side to the lower surface side of the substrate. In the heating step, the substrate after the first cleaning step is heated. In the second cleaning step, after the heating step, a second cleaning liquid is supplied to the lower surface of the substrate to remove the catalyst liquid remaining on the lower surface of the substrate.

Description

Technical Field

[0001] This disclosure relates to a substrate processing method, a substrate processing apparatus, and a storage medium. Background Technology

[0002] Previously, a technique was known to use a catalyst liquid to treat a substrate before it was to be plated. Patent Document 1 discloses a technique in which a catalyst liquid is supplied to the upper surface of a substrate to form a catalyst adsorption film containing the catalyst, and then the formation of the catalyst adsorption film is promoted by heating the substrate.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2015-79885 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure provides a technique for suppressing catalyst adhesion to the lower surface of a substrate.

[0008] Solution for solving the problem

[0009] One aspect of the substrate processing method disclosed herein includes a substrate holding step, a catalyst supply step, a first cleaning step, a heating step, and a second cleaning step. In the substrate holding step, the substrate is held. In the catalyst supply step, a catalyst solution is supplied to the upper surface of the substrate to provide a catalyst. In the first cleaning step, either during or after the catalyst supply step, a first cleaning solution is supplied to the lower surface of the substrate to remove the catalyst solution spreading from the upper surface to the lower surface of the substrate. In the heating step, the substrate after the first cleaning step is heated. In the second cleaning step, after the heating step, a second cleaning solution is supplied to the lower surface of the substrate to remove any remaining catalyst solution on the lower surface of the substrate.

[0010] The effects of the invention

[0011] According to this disclosure, it is possible to suppress the adhesion of catalyst to the lower surface of the substrate. Attached Figure Description

[0012] Figure 1 This is a diagram showing the structure of the substrate processing apparatus according to the embodiment.

[0013] Figure 2 This is a diagram showing the structure of the catalyst supply and processing unit according to the embodiment.

[0014] Figure 3This is a diagram showing the structure of the cleaning fluid supply unit according to the embodiment.

[0015] Figure 4 This is a flowchart illustrating the substrate processing procedure performed by the substrate processing apparatus according to the embodiment.

[0016] Figure 5 It is shown Figure 4 An explanatory diagram illustrating an example of substrate holding treatment.

[0017] Figure 6 It is shown Figure 4 The illustrated diagram shows an example of a catalyst-provided treatment.

[0018] Figure 7 It is shown Figure 4 An explanatory diagram showing an example of the first cleaning process.

[0019] Figure 8 It is shown Figure 4 An explanatory diagram showing an example of heat treatment.

[0020] Figure 9 It is shown Figure 4 An explanatory diagram showing an example of the rinsing process and the second cleaning process. Detailed Implementation

[0021] The following describes in detail, with reference to the accompanying drawings, the substrate processing method, substrate processing apparatus, and storage medium for implementing the present disclosure (hereinafter referred to as "Embodiments"). However, the present disclosure is not limited by these embodiments. Furthermore, the drawings are schematic, and it should be noted that the dimensional relationships and ratios of the elements may sometimes differ from reality. Also, the drawings may sometimes include portions with different dimensional relationships and ratios.

[0022] Furthermore, in the embodiments shown below, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" are sometimes used, but these expressions do not need to be strictly "constant," "orthogonal," "perpendicular," or "parallel." That is, the above expressions, for example, allow for deviations in manufacturing precision, setting precision, etc.

[0023] Furthermore, in the accompanying figures below, to facilitate understanding, an orthogonal coordinate system is sometimes shown, defining mutually orthogonal X-axis, Y-axis, and Z-axis directions, with the positive Z-axis direction set as the vertically upward direction. Additionally, the direction of rotation about the vertical axis is sometimes referred to as the θ direction.

[0024] Previously, a technique was known to use a catalyst liquid to treat a substrate before it was to be plated. Patent Document 1 discloses a technique in which a catalyst liquid is supplied to the upper surface of a substrate to form a catalyst adsorption film containing the catalyst, and then the formation of the catalyst adsorption film is promoted by heating the substrate.

[0025] Furthermore, in the aforementioned technology, when a catalyst liquid is supplied to the upper surface of the substrate, the catalyst liquid spreads from the upper surface side to the lower surface side of the substrate and remains on the lower surface of the substrate. When the substrate is heated while the catalyst liquid remains on the lower surface of the substrate, the formation of a catalyst adsorption film is promoted on the lower surface of the substrate. Therefore, the catalyst is attached not only to the upper surface of the substrate but also to the lower surface of the substrate.

[0026] Therefore, it is desirable to develop a technology that can suppress catalyst adhesion to the lower surface of the substrate.

[0027] <Structure of the substrate processing device>

[0028] Figure 1 This is a diagram illustrating the structure of the substrate processing apparatus 1 according to the embodiment. Figure 1 As shown, the substrate processing apparatus 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are arranged adjacent to each other.

[0029] The loading / unloading station 2 includes a carrier platform 11 and a transport unit 12. The carrier platform 11 holds multiple carriers C that horizontally accommodate multiple substrates, which in this embodiment are semiconductor wafers (hereinafter referred to as substrates W).

[0030] Multiple loading ports are arranged adjacent to the conveying unit 12 on the carrier platform 11, and carriers C are placed one by one on each of the multiple loading ports.

[0031] The transport section 12 is disposed adjacent to the carrier stage 11, and a substrate transport device 13 and a transfer section 14 are provided inside the transport section 12. The substrate transport device 13 is equipped with a wafer holding mechanism for holding the substrate W. In addition, the substrate transport device 13 is capable of moving in the horizontal and vertical directions and rotating about the vertical axis, and the wafer holding mechanism is used to transport the substrate W between the carrier C and the transfer section 14.

[0032] The processing station 3 is located adjacent to the conveying unit 12. The processing station 3 includes a conveying unit 15, multiple catalyst supply processing units 5, and multiple plating processing units 18.

[0033] Multiple catalyst supply processing units 5 and multiple plating processing units 18 are arranged on both sides of the conveying unit 15. Furthermore, Figure 1The arrangement and number of catalyst supply processing unit 5 and plating processing unit 18 shown are just an example and are not limited to the situation shown.

[0034] The transport unit 15 has a substrate transport device 17 inside. The substrate transport device 17 has a wafer holding mechanism for holding the substrate W. In addition, the substrate transport device 17 can move in the horizontal and vertical directions and rotate about the vertical axis, and uses the wafer holding mechanism to transport the substrate W between the transfer unit 14, the catalyst supply processing unit 5 and the plating processing unit 18.

[0035] The catalyst supply processing unit 5 performs a prescribed catalyst supply process on the substrate W transported by the substrate transport device 17. The structure of the catalyst supply processing unit 5 will be described later.

[0036] The plating processing unit 18 performs a prescribed plating process on the substrate W transported by the substrate transport device 17. The plating processing unit is, for example, a device capable of supplying plating solution for forming a plating film to the substrate W from a nozzle.

[0037] Furthermore, the substrate processing apparatus 1 includes a control device 9. The control device 9 is, for example, a computer, and includes a control unit 91 and a storage unit 92. The storage unit 92 stores programs for controlling various processes performed in the substrate processing apparatus 1. The control unit 91 controls the operation of the substrate processing apparatus 1 by reading the programs stored in the storage unit 92 and executing those programs.

[0038] Furthermore, the program can also be recorded on a computer-readable storage medium and installed from that storage medium into the storage unit 92 of the control device 9. Examples of computer-readable storage media include hard disks (HD), floppy disks (FD), optical disks (CD), magneto-optical disks (MO), and memory cards.

[0039] In the substrate processing apparatus 1 configured as described above, firstly, the substrate transport device 13 of the transport station 2 removes the substrate W from the carrier C placed on the carrier platform 11 and places the removed substrate W on the transfer section 14. The substrate W placed on the transfer section 14 is removed from the transfer section 14 by the substrate transport device 17 of the processing station 3 and transported to the catalyst supply processing section 5.

[0040] After the catalyst supply treatment is performed by the catalyst supply treatment unit 5, the substrate W is moved out of the catalyst supply treatment unit 5 by the substrate transport device 17 and moved into the plating treatment unit 18.

[0041] After the substrate W, which has been moved into the plating processing section 18, has undergone the prescribed plating process by the plating processing section 18, it is moved out of the plating processing section 18 by the substrate transport device 17 and placed in the transfer section 14. Then, the processed substrate W placed in the transfer section 14 is returned to the carrier C of the carrier platform 11 by the substrate transport device 13.

[0042] <Structure of the catalyst supply and processing unit>

[0043] Next, refer to Figure 2 To illustrate the structure of the catalyst supply and processing unit. Figure 2 This is a diagram showing the structure of the catalyst supply processing unit 5 according to the embodiment.

[0044] The catalyst supply processing unit 5 is configured to perform liquid processing, including catalyst supply processing. The catalyst supply processing unit 5 includes: a chamber 51; a substrate holding unit 52 disposed in the chamber 51 to hold the substrate W horizontally; and a catalyst liquid supply unit 53 to supply catalyst liquid L1 (processing liquid) to the surface (upper surface) of the substrate W held by the substrate holding unit 52.

[0045] In this embodiment, the substrate holding portion 52 has a holding disc member (holding disc: chuck) 521 for vacuum adsorption of the back side (lower surface) of the substrate W. This holding disc member 521 is a so-called vacuum holding disc type.

[0046] A rotary motor 523 (rotation drive unit) is connected to the substrate holding part 52 via a rotary shaft 522. When the rotary motor 523 is driven, the substrate holding part 52 rotates together with the substrate W. The rotary motor 523 is supported by a base 524 fixed to the chamber 51. Furthermore, no heating source such as a heater is provided inside the substrate holding part 52.

[0047] The catalyst liquid supply unit 53 includes a catalyst liquid nozzle 531 for spraying (supplying) catalyst liquid L1 to the substrate W held in the substrate holding unit 52, and a catalyst liquid supply source 532 for supplying catalyst liquid L1 to the catalyst liquid nozzle 531. The catalyst liquid supply source 532 is configured to supply catalyst liquid L1 heated or heated to a predetermined temperature to the catalyst liquid nozzle 531 via a catalyst liquid piping 533. The temperature of the catalyst liquid L1 when it is sprayed from the catalyst liquid nozzle 531 is, for example, 55°C or higher and 75°C or lower, more preferably 60°C or higher and 70°C or lower. The catalyst liquid nozzle 531 is held in the nozzle arm 56 and is configured to be movable.

[0048] Catalyst solution L1 contains a catalyst composed of metal ions that are catalytically active in the oxidation reaction of the reducing agent in the plating solution. Examples of such catalysts include those containing iron group elements (Fe, Co, Ni), platinum elements (Ru, Rh, Pd, Os, Ir, Pt), Cu, Ag, or Au.

[0049] The catalyst supply processing unit 5 also includes a cleaning liquid supply unit 54 that supplies cleaning liquid L2 to the surface of the substrate W held in the substrate holding unit 52, and a rinsing liquid supply unit 55 that supplies rinsing liquid L3 to the surface of the substrate W.

[0050] The cleaning fluid supply unit 54 supplies cleaning fluid L2 to the substrate W, which is held and rotated in the substrate holding unit 52, to pre-clean the metal layer formed on the upper surface of the substrate W. The cleaning fluid supply unit 54 includes a cleaning fluid nozzle 541 for spraying cleaning fluid L2 onto the substrate W held in the substrate holding unit 52, and a cleaning fluid supply source 542 for supplying cleaning fluid L2 to the cleaning fluid nozzle 541. The cleaning fluid supply source 542 is configured to supply cleaning fluid L2, heated or heated to a predetermined temperature, to the cleaning fluid nozzle 541 via a cleaning fluid piping 543. The cleaning fluid nozzle 541 is held by a nozzle arm 56 and can move together with the catalyst liquid nozzle 531.

[0051] As the cleaning solution L2, a dicarboxylic acid or a tricarboxylic acid is used. Examples of dicarboxylic acids include malic acid, succinic acid, malonic acid, oxalic acid, glutaric acid, adipic acid, and tartaric acid. Examples of tricarboxylic acids include citric acid.

[0052] The rinsing fluid supply unit 55 includes a rinsing fluid nozzle 551 that sprays rinsing fluid L3 onto the substrate W held in the substrate holding unit 52, and a rinsing fluid supply source 552 that supplies rinsing fluid L3 to the rinsing fluid nozzle 551. The rinsing fluid nozzle 551 is held by a nozzle arm 56 and can move together with the catalyst liquid nozzle 531 and the cleaning fluid nozzle 541. The rinsing fluid supply source 552 is configured to supply rinsing fluid L3 to the rinsing fluid nozzle 551 via a rinsing fluid piping 553. For example, pure water can be used as the rinsing fluid L3.

[0053] A nozzle moving mechanism (not shown) is connected to the nozzle arm 56, which holds the catalyst liquid nozzle 531, cleaning liquid nozzle 541, and rinsing liquid nozzle 551 described above. This nozzle moving mechanism moves the nozzle arm 56 in both horizontal and vertical directions. More specifically, the nozzle moving mechanism allows the nozzle arm 56 to move between a spraying position where it sprays the processing liquid (catalyst liquid L1, cleaning liquid L2, or rinsing liquid L3) onto the substrate W and a retraction position where it retracts from the spraying position. The spraying position is not particularly limited as long as the processing liquid can be supplied to any location on the surface of the substrate W. For example, it is preferable to set it to a position where the processing liquid can be supplied to the center of the substrate W. The spraying position of the nozzle arm 56 may also be different when the catalyst liquid L1 is supplied to the substrate W, when the cleaning liquid L2 is supplied, and when the rinsing liquid L3 is supplied. The retraction position is a position within the chamber 51 that does not overlap with the substrate W when viewed from above and is far from the spraying position. When the nozzle arm 56 is positioned in the retraction position, interference between the moving cover 6 and the nozzle arm 56 can be avoided.

[0054] A cup 571 is provided around the substrate holding portion 52. The cup 571 is annular when viewed from above. When the substrate W rotates, it catches the processing liquid that spills from the substrate W and guides it to the drain pipe 581. An atmosphere shield 572 is provided on the outer periphery of the cup 571 to prevent the atmosphere surrounding the substrate W from diffusing into the chamber 51. The atmosphere shield 572 is cylindrical in a vertical direction and open at the top. The cover 6, described later, can be inserted into the atmosphere shield 572 from above.

[0055] In this embodiment, the substrate W held in the substrate holding portion 52 is covered by a cover 6 (an example of a heating member). The cover 6 has a top 61 and a side wall portion 62 extending downward from the top 61.

[0056] The top 61 includes a first top plate 611 and a second top plate 612 disposed on the first top plate 611. A heater 63 (heating part) is disposed between the first top plate 611 and the second top plate 612. The first top plate 611 and the second top plate 612 are configured to seal the heater 63, preventing the heater 63 from contacting the catalyst liquid L1 or other processing liquids. More specifically, a sealing ring 613 is provided on the outer periphery of the heater 63, thereby sealing the heater 63. The first top plate 611 and the second top plate 612 preferably have corrosion resistance to the catalyst liquid L1 or other processing liquids, and may be formed of aluminum alloy, for example. To further improve corrosion resistance, the first top plate 611, the second top plate 612, and the side wall portion 62 may also be coated with Teflon (registered trademark).

[0057] A cover moving mechanism 7 is connected to the cover 6 via a cover arm 71. The cover moving mechanism 7 moves the cover 6 horizontally and vertically. More specifically, the cover moving mechanism 7 includes a rotary motor 72 that moves the cover 6 horizontally and a cylinder 73 (interval adjustment unit) that moves the cover 6 vertically. The rotary motor 72 is mounted on a support plate 74 that is configured to move vertically relative to the cylinder 73. Alternatively, an actuator (not shown) including a motor and a ball screw can be used instead of the cylinder 73.

[0058] The rotation motor 72 of the cover moving mechanism 7 moves the cover 6 between an upper position, positioned above the substrate W held by the substrate holding part 52, and a retracted position, retracting from the upper position. The upper position is a position where the cover faces the substrate W held by the substrate holding part 52 at a relatively large interval and overlaps with the substrate W when viewed from above. The retracted position is a position within the chamber 51 where the cover does not overlap with the substrate W when viewed from above. When the cover 6 is positioned in the retracted position, interference between the moving nozzle arm 56 and the cover 6 is prevented. The rotation axis of the rotation motor 72 extends vertically, allowing the cover 6 to rotate horizontally between the upper position and the retracted position.

[0059] The cylinder 73 of the cover moving mechanism 7 moves the cover 6 vertically to adjust the gap between the substrate W, which has been supplied with catalyst liquid L1, and the first top plate 611 of the top 61. More specifically, the cylinder 73 positions the cover 6 in the lower position. Figure 2 The position shown by the solid line in the middle) and the position above ( Figure 2 (The position indicated by the double-dotted line in the text).

[0060] In the embodiment, when the heater 63 is driven to position the cover 6 in the aforementioned lower position, the substrate holding portion 52 or the catalyst liquid L1 on the substrate W is heated.

[0061] The top 61 and sidewalls 62 of the cover 6 are covered by a cover 64. This cover 64 is mounted on the second top plate 612 of the cover 6 via support portions 65. Specifically, a plurality of support portions 65 protruding upwards from the upper surface of the second top plate 612 are provided on the second top plate 612, and the cover 64 is mounted on these support portions 65. The cover 64 is movable together with the cover 6 in both horizontal and vertical directions. Furthermore, to suppress heat loss from the cover 6 to the surroundings, the cover 64 preferably has higher heat insulation properties than the top 61 and sidewalls 62. For example, the cover 64 is preferably made of a resin material, and more preferably, the resin material has heat resistance.

[0062] In this embodiment, the cover 6 having the heater 63 and the cover cover 64 are integrally provided, and when the cover unit 10 covering the substrate holding part 52 or the substrate W is positioned below, it is composed of these cover 6 and cover cover 64.

[0063] A fan filter unit 59 (gas supply unit) is provided at the upper part of the chamber 51 to supply clean air (gas) to the surrounding area of ​​the cover 6. The fan filter unit 59 supplies air into the chamber 51 (especially into the atmosphere shield 572), and the supplied air flows toward the exhaust pipe 81. A downward flow of this air is formed around the cover 6, and the gas vaporized from the catalyst liquid L1 and other processing liquids flows toward the exhaust pipe 81 through this downward flow. In this way, the gas vaporized from the processing liquid is prevented from rising and diffusing into the chamber 51.

[0064] The gas supplied from the aforementioned fan filter unit 59 is discharged through the exhaust mechanism 8.

[0065] <Structure of the Cleaning Fluid Supply Department>

[0066] The catalyst supply processing unit 5 according to the embodiment also includes a cleaning liquid supply unit for supplying cleaning liquid (first cleaning liquid and second cleaning liquid) to the lower surface of the substrate W held in the substrate holding unit 52. (See also...) Figure 3 To illustrate the structure of the cleaning fluid supply unit.

[0067] Figure 3 This is a diagram showing the structure of the cleaning fluid supply unit 4 according to the embodiment.

[0068] like Figure 3 As shown, the cleaning fluid supply unit 4 includes a cleaning fluid nozzle 41 that sprays cleaning fluid L4 (an example of a first cleaning fluid and a second cleaning fluid) and a cleaning fluid supply source 42 that supplies cleaning fluid L4 to the cleaning fluid nozzle 41. In this embodiment, the cleaning fluid supply source 42 supplies heated cleaning fluid L4 to the cleaning fluid nozzle 41 via a cleaning fluid piping 43. For example, pure water is used as the cleaning fluid L4.

[0069] The cleaning fluid nozzle 41 is positioned below the substrate W held in the substrate holding portion 52, and sprays cleaning fluid L4 onto the lower surface of the substrate W. In this embodiment, the cleaning fluid nozzle 41 sprays the cleaning fluid L4 radially outward from the substrate W. This allows for efficient supply of cleaning fluid L4 to the entire lower surface of the substrate W. Furthermore, not limited to this example, the cleaning fluid nozzle 41 may also spray the cleaning fluid L4 vertically upward.

[0070] <Specific Operations of the Substrate Processing Device>

[0071] Next, refer to Figures 4-9 To explain the specific operation of the substrate processing apparatus 1 described above. Figure 4 This is a flowchart illustrating the substrate processing procedure performed by the substrate processing apparatus 1 according to the embodiment. Additionally, Figure 5 It is shown Figure 4 The illustration shows an example of a substrate holding process. Figure 6 It is shown Figure 4 The illustrated diagram shows an example of catalyst treatment. Additionally, Figure 7 It is shown Figure 4 An explanatory diagram showing an example of the first cleaning process is provided. Figure 8 It is shown Figure 4 An explanatory diagram showing an example of heat treatment is provided. Figure 9 It is shown Figure 4 An explanatory diagram showing an example of the rinsing process and the second cleaning process.

[0072] First, the control unit 91 controls the substrate conveying devices 13 and 17 to convey the substrate W from the carrier C to the inside of the catalyst supply processing unit 5, and holds the substrate W using the substrate holding unit 52 (step S101). Here, the control unit 91 performs vacuum adsorption on the center of the lower surface of the substrate W, and holds the substrate W horizontally using the substrate holding unit 52 (see reference). Figure 5 ).

[0073] Next, the control unit 91 performs a top surface cleaning process on the substrate W (step S102). In this case, firstly, the rotary motor 523 is driven to rotate the substrate W at a predetermined speed. Then, it is positioned in the retracted position (…). Figure 2 The nozzle arm 56 (as shown by the solid line in the image) moves to the ejection position above the center of the substrate W.

[0074] Then, cleaning fluid L2 is supplied from cleaning fluid nozzle 541 to the upper surface of the rotating substrate W to clean the upper surface of the substrate W. This removes any adhering substances or other contaminants from the substrate W. The cleaning fluid L2 supplied to the substrate W is discharged into drain pipe 581.

[0075] Next, the control unit 91 performs a rinsing process on the substrate W (step S103). In this case, rinsing fluid L3 is supplied from the rinsing fluid nozzle 551 to the rotating substrate W to rinse the upper surface of the substrate W. As a result, the cleaning fluid L2 remaining on the substrate W is rinsed off. The rinsing fluid L3 supplied to the substrate W is discharged into the drain pipe 581.

[0076] Next, the control unit 91 performs a catalyst supply process on the substrate W (step S104). In this case, firstly, the control unit 91 rotates the substrate W at a first rotational speed. The first rotational speed is, for example, a speed greater than 20 (rpm).

[0077] Then, catalyst liquid L1 is supplied from catalyst liquid nozzle 531 to the substrate W rotating at a first rotational speed to provide catalyst to the upper surface of the substrate W. Afterwards, the rotational speed of the substrate W is gradually reduced from the first rotational speed to a second rotational speed. The second rotational speed is, for example, 20 rpm or less. As the rotational speed of the substrate W decreases, the catalyst liquid L1 supplied from catalyst liquid nozzle 531 remains on the upper surface of the substrate W, forming a layer (so-called liquid mass) of catalyst liquid L1 on the upper surface of the substrate W (see reference). Figure 6 Thus, a catalyst adsorption film (not shown) containing metal ions (e.g., Pd ions) as a catalyst begins to form on the upper surface of the substrate W. A portion of the catalyst liquid L1 spreads from the upper surface side to the lower surface side of the substrate W at its end and remains on the lower surface of the substrate W. When the substrate W is heated in a subsequent process (heat treatment described later) while the catalyst liquid L1 remains on the lower surface of the substrate W, the formation of the catalyst adsorption film is promoted on the lower surface of the substrate W, so that the catalyst is attached not only on the upper surface of the substrate W but also on the lower surface of the substrate W.

[0078] Therefore, in the embodiment, after the catalyst is provided and before the heat treatment, the amount of catalyst liquid L1 spreading from the upper surface side to the lower surface side of the substrate W is reduced, thereby suppressing the adhesion of the catalyst to the lower surface of the substrate W.

[0079] Specifically, the control unit 91 performs a first cleaning process on the substrate W (step S105). In this case, cleaning fluid L4 (an example of the first cleaning fluid) is supplied from the cleaning fluid supply unit 4 to the rotating substrate W to clean the lower surface of the substrate W (see reference). Figure 7 Therefore, the catalyst liquid L1 spreading from the upper surface to the lower surface of the substrate W is removed from the lower surface of the substrate W, and the amount of catalyst liquid L1 spreading from the upper surface to the lower surface of the substrate W is reduced. As a result, it is possible to suppress the adhesion of catalyst to the lower surface of the substrate W.

[0080] Furthermore, in the first cleaning process, the cleaning solution L4 is supplied to the lower surface of the substrate W at a temperature higher than that of the catalyst solution L1 supplied to the upper surface of the substrate W in the catalyst supply process. This suppresses the temperature drop of the substrate W, thus preventing the catalyst from adhering to the upper surface of the substrate W due to a temperature decrease. Additionally, the temperature of the cleaning solution L4 supplied to the lower surface of the substrate W is preferably lower than the set temperature of the heater 63 used for heating the substrate W in the heating process described later.

[0081] Next, the control unit 91 heats the substrate W using the cover 6 and the heater 63 (step S106). Specifically, the control unit 91 covers the substrate W with the cover 6 and activates the heater 63, thereby heating the liquid mass of catalyst liquid L1 formed on the upper surface of the substrate W (see reference). Figure 8 The set temperature of heater 63 is fixed to a constant target temperature through heat treatment. The target temperature is, for example, above 90°C and below 100°C. By heating the liquid mass of catalyst liquid L1, the formation of a catalyst adsorption film on the upper surface of substrate W is promoted.

[0082] Next, the control unit 91 performs a rinsing process and a second cleaning process on the substrate W (step S107). In this rinsing process, firstly, the rotational speed of the substrate W is increased compared to the second rotational speed during the catalyst supply process. For example, the substrate W is rotated at the same rotational speed as the rinsing process before the catalyst supply process (step S103). Next, the rinsing liquid nozzle 551, positioned in the retracted position, moves to the ejection position. Then, rinsing liquid L3 is supplied from the rinsing liquid nozzle 551 to the rotating substrate W to clean the upper surface of the substrate W. As a result, the catalyst liquid L1 remaining on the substrate W is rinsed off (see reference). Figure 9 The rinsing fluid L3 supplied to the substrate W is discharged into the drain pipe 581.

[0083] In the second cleaning process, cleaning fluid L4 (an example of the second cleaning fluid) is supplied from the cleaning fluid supply unit 4 to the rotating substrate W to clean the lower surface of the substrate W (see reference). Figure 9 Therefore, the catalyst solution L1 that was not removed in the first cleaning process (step S105) is removed from the lower surface of the substrate W. As a result, it is possible to suppress the adhesion of catalyst to the lower surface of the substrate W.

[0084] Furthermore, the second cleaning process is performed in parallel with the rinsing process in step S107. Therefore, even if the catalyst liquid L1 removed by the cleaning liquid L4 spreads to the upper surface of the substrate W, the catalyst liquid L1 can be rinsed by the rinsing liquid L3 supplied to the upper surface of the substrate W.

[0085] Furthermore, pure water is used as the cleaning solution L4 in both the first and second cleaning processes. Therefore, even if the cleaning solution L4 spreads towards the upper surface of the substrate W, its impact on the upper surface of the substrate W can be minimized.

[0086] Furthermore, the catalyst supply process, the first cleaning process, the heating process, and the second cleaning process are all performed within the same processing unit (catalyst supply processing unit 5). This saves time spent transferring the substrate W between different processing units, thus shortening the overall processing time of the substrate W.

[0087] Next, the substrate W after rinsing is dried (step S108). In this case, for example, the rotation speed of the substrate W is increased compared to the rotation speed in the rinsing process (step S107) to make the substrate W rotate at a high speed. As a result, the rinsing liquid L3 remaining on the substrate W is spun off and the substrate W dries.

[0088] When the drying process is completed, the control unit 91 controls the substrate conveying device 17 to move the substrate W from the catalyst supply processing unit 5 to the plating processing unit 18, and performs a predetermined plating process on the substrate W in the plating processing unit 18 (step S109). The plating process is performed, for example, by supplying the substrate W with a plating solution for forming a plating film.

[0089] The plating process is performed in a separate processing unit (plating processing unit 18) from the processing unit (catalyst supply processing unit 5) that performs the catalyst supply processing, the first cleaning processing, the heating processing, and the second cleaning processing. As a result, contamination caused by the catalyst in the plating processing unit 18 can be suppressed.

[0090] When the plating process is completed, the substrate W is removed from the plating process section 18 and transferred to the transfer section 14 by the substrate transfer device 17. Furthermore, the substrate W transferred to the transfer section 14 is removed from the transfer section 14 by the substrate transfer device 13 and housed in the carrier C. Thus, the series of substrate processing steps for one substrate W is completed.

[0091] In addition, Figure 4 The example shown illustrates a case where a first cleaning process (step S105) is performed after the catalyst supply process, but the first cleaning process can also be performed during the catalyst supply process. Therefore, similar to the case where a first cleaning process is performed after the catalyst supply process, it is possible to suppress catalyst adhesion to the lower surface of the substrate W.

[0092] Furthermore, when performing the first cleaning process during the catalyst supply process, the cleaning liquid L4 can be supplied to the lower surface of the substrate W at a time when the rotational speed of the substrate W reaches a second rotational speed lower than the first rotational speed. Therefore, even if the catalyst liquid L1 easily spreads from the upper surface to the lower surface of the substrate W as the rotational speed of the substrate W decreases, the catalyst liquid L1 can be efficiently removed from the lower surface of the substrate W.

[0093] In addition, Figure 4 In the example, cleaning fluid L4 is continuously supplied to the lower surface of substrate W during the first cleaning process, but the disclosed technology is not limited to this. For example, cleaning fluid L4 may also be supplied intermittently to the lower surface of substrate W during the first cleaning process. This can suppress the temperature drop of substrate W caused by the supply of cleaning fluid L4.

[0094] <Variation Example>

[0095] In the above embodiment, the example illustrates that both the cleaning solution L4 (first cleaning solution) for the first cleaning process and the cleaning solution L4 (second cleaning solution) for the second cleaning process are pure water. However, different cleaning solutions can be used for the first and second cleaning processes. For example, pure water can be used as the first cleaning solution for the first cleaning process, and an acidic aqueous solution can be used as the second cleaning solution for the second cleaning process. In this case, hydrochloric acid can be used as an acidic aqueous solution. By using an acidic aqueous solution as the second cleaning solution for the second cleaning process, the catalyst solution L1 can be efficiently removed from the lower surface of the substrate W.

[0096] As described above, the substrate processing method according to the embodiments includes a substrate holding step (for example, substrate holding treatment), a catalyst supply step (for example, catalyst supply treatment), a first cleaning step (for example, first cleaning treatment), a heating step (for example, heating treatment), and a second cleaning step (for example, second cleaning treatment). In the substrate holding step, the substrate (for example, substrate W) is held. In the catalyst supply step, a catalyst liquid (for example, catalyst liquid L1) is supplied to the upper surface of the substrate to provide a catalyst. In the first cleaning step, during or after the catalyst supply step, a first cleaning liquid (for example, cleaning liquid L4) is supplied to the lower surface of the substrate to remove the catalyst liquid spreading from the upper surface side to the lower surface side of the substrate. In the heating step, the substrate after the first cleaning step is heated. In the second cleaning step, after the heating step, a second cleaning liquid is supplied to the lower surface of the substrate to remove the catalyst liquid remaining on the lower surface of the substrate. Therefore, according to the substrate processing method according to the embodiments, it is possible to suppress the adhesion of catalyst to the lower surface of the substrate.

[0097] In the first cleaning step, the first cleaning solution may also be supplied to the lower surface of the substrate at a temperature higher than that of the catalyst solution supplied to the upper surface of the substrate in the catalyst supply step. Therefore, according to the substrate processing method of the embodiment, it is possible to suppress the adhesion of the catalyst to the upper surface of the substrate due to a drop in substrate temperature.

[0098] In the first cleaning step, the first cleaning solution can also be intermittently supplied to the lower surface of the substrate. Therefore, according to the substrate processing method of the embodiment, the temperature drop of the substrate caused by the supply of the first cleaning solution can be suppressed.

[0099] In the catalyst supply process, catalyst liquid can be supplied to the upper surface of the substrate while the substrate is rotating at a first rotational speed, and the rotational speed of the substrate can be gradually decreased from the first rotational speed. In the first cleaning process, the first cleaning liquid can be supplied to the lower surface of the substrate when the rotational speed of the substrate reaches a second rotational speed lower than the first rotational speed during the catalyst supply process. Therefore, according to the substrate processing method of the embodiment, even if the catalyst liquid is prone to spread from the upper surface side to the lower surface side of the substrate W as the rotational speed of the substrate decreases, the catalyst liquid can be efficiently removed from the lower surface of the substrate.

[0100] The first cleaning solution and the second cleaning solution can also be pure water. Therefore, according to the substrate processing method of the embodiment, even if the first cleaning solution and the second cleaning solution spread to the upper surface of the substrate, the impact on the upper surface of the substrate can be reduced.

[0101] Alternatively, the first cleaning solution can be pure water, and the second cleaning solution can be an acidic aqueous solution.

[0102] Therefore, according to the substrate processing method of the embodiment, the catalyst liquid can be efficiently removed from the lower surface of the substrate.

[0103] The substrate processing method according to the embodiments may also include a rinsing process (as an example, a rinsing process), in which a rinsing liquid is supplied to the upper surface of the substrate after the heating process. The second cleaning process may also be performed in parallel with the rinsing process. Therefore, according to the substrate processing method according to the embodiments, even if the catalyst liquid removed by the second cleaning liquid spreads to the upper surface of the substrate, the catalyst liquid can be rinsed off by the rinsing liquid supplied to the upper surface of the substrate.

[0104] The catalyst supply process, the first cleaning process, the heating process, and the second cleaning process can also be performed within the same processing unit (for example, the catalyst supply processing unit 5). Therefore, according to the substrate processing method of the embodiment, time spent transferring substrates between different processing units can be saved, thus shortening the overall substrate processing time.

[0105] The substrate processing method described in the embodiments may also include a plating process (for example, plating treatment), in which a plating solution is supplied to the upper surface of the substrate after the second cleaning process to form a coating on the catalyst adsorption film containing the catalyst. The plating process may also be performed in a different processing unit (for example, plating treatment unit 18) than the processing unit that performs the catalyst supply process, the first cleaning process, the heating process, and the second cleaning process. This allows for the suppression of contamination caused by the catalyst in other processing units.

[0106] It should be considered that the embodiments disclosed herein are illustrative in all respects and not restrictive. In fact, the above-described embodiments can be implemented in various ways. Furthermore, the above-described embodiments can be omitted, substituted, or modified in various ways without departing from the appended claims and their spirit.

[0107] Explanation of reference numerals in the attached figures

[0108] 1: Substrate processing apparatus; 4: Cleaning solution supply unit; 5: Catalyst supply processing unit; 6: Cover; 7: Cover moving mechanism; 9: Control device; 18: Plating processing unit; 41: Cleaning solution nozzle; 42: Cleaning solution supply source; 43: Cleaning solution piping; 52: Substrate holding unit; 53: Catalyst solution supply unit; 63: Heater; 91: Control unit; 92: Storage unit; 521: Holding plate component; 531: Catalyst solution nozzle; 532: Catalyst solution supply source; 533: Catalyst solution piping; L1: Catalyst solution; L2: Cleaning solution; L3: Rinsing solution; L4: Cleaning solution; W: Substrate.

Claims

1. A substrate processing method, comprising the following steps: Substrate holding process, holding the substrate; The catalyst supply process involves supplying a catalyst liquid to the upper surface of the substrate to provide a catalyst. In the first cleaning step, during or after the catalyst supply step, a first cleaning liquid is supplied to the lower surface of the substrate to remove the catalyst liquid that has spread from the upper surface side to the lower surface side of the substrate. The heating process involves heating the substrate after the first cleaning process; as well as In the second cleaning step, after the heating step, a second cleaning solution is supplied to the lower surface of the substrate to remove the catalyst solution remaining on the lower surface of the substrate.

2. The substrate processing method according to claim 1, wherein, In the first cleaning step, the first cleaning solution is supplied to the lower surface of the substrate at a temperature higher than that of the catalyst solution supplied to the upper surface of the substrate in the catalyst supply step.

3. The substrate processing method according to claim 1, wherein, In the first cleaning process, The first cleaning solution is intermittently supplied to the lower surface of the substrate.

4. The substrate processing method according to claim 1, wherein, In the catalyst supply process, While rotating the substrate at a first rotational speed, the catalyst liquid is supplied to the upper surface of the substrate, and the rotational speed of the substrate is gradually decreased from the first rotational speed. In the first cleaning process, In the catalyst supply process, when the rotational speed of the substrate reaches a second rotational speed lower than the first rotational speed, the first cleaning solution is supplied to the lower surface of the substrate.

5. The substrate processing method according to claim 1, wherein, The first cleaning solution and the second cleaning solution are pure water.

6. The substrate processing method according to claim 1, wherein, The first cleaning solution is pure water. The second cleaning solution is an acidic aqueous solution.

7. The substrate processing method according to claim 1, wherein, It also includes a rinsing process, in which rinsing liquid is supplied to the upper surface of the substrate after the heating process. The second cleaning step is performed in parallel with the rinsing process.

8. The substrate processing method according to claim 1, wherein, The catalyst supply process, the first cleaning process, the heating process, and the second cleaning process are all performed within the same processing unit.

9. The substrate processing method according to claim 8, wherein, It also includes a plating process in which a plating solution is supplied to the upper surface of the substrate after the second cleaning process to form a coating on the catalyst adsorption film containing the catalyst. The plating process is carried out in a different processing unit than the processing unit that performs the catalyst supply process, the first cleaning process, the heating process, and the second cleaning process.

10. A substrate processing apparatus comprising: A substrate holding section that holds a substrate; A catalyst liquid supply unit supplies catalyst liquid to the upper surface of the substrate; The cleaning fluid supply unit supplies cleaning fluid to the lower surface of the substrate; A heating element that heats the substrate; and The control department controls all other departments. in, The control unit controls each part to perform a substrate processing method including the following steps: In the holding process, the substrate is held by the substrate holding portion; In the catalyst supply process, the catalyst is supplied to the upper surface of the substrate by supplying the catalyst liquid to the catalyst liquid supply unit; In the first cleaning step, during or after the catalyst supply step, a first cleaning liquid is supplied to the lower surface of the substrate through the cleaning liquid supply unit to remove the catalyst liquid that has spread from the upper surface of the substrate to the lower surface side. The heating process involves heating the substrate after the first cleaning process using the heating component. as well as In the second cleaning step, after the heating step, a second cleaning liquid is supplied to the lower surface of the substrate through the cleaning liquid supply unit to remove the catalyst liquid remaining on the lower surface of the substrate.

11. A storage medium storing a program that causes a computer to execute the substrate processing method according to claim 1.

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