Cylinder, processing device and method

Abstract

A cylinder (102) for analyzing and / or processing a sample (10), such as a mask for a lithographic apparatus, comprises a particle source (104) configured to emit a particle beam (106) onto the sample (10) in a first direction (R1); a detector device (214, 216) configured to detect particles (215, 217) moving in a second direction (R2) opposite the first direction (R1); and a positioning device (404) configured to position the detector device (214, 216) in a plane (x, y) oriented perpendicular to the first direction (R1).

Description

Technical Field

[0001] This invention relates to a column, a processing device, and a method. Background Technology

[0002] The contents of priority application DE 10 2023 113 302.0 are incorporated herein by reference in their entirety.

[0003] Microlithography is used to create microstructures, such as integrated circuits. The microlithography process is performed using lithography equipment containing an illumination system and a projection system. An image of a mask (also called a mask master or lithographic mask) illuminated by the illumination system is then projected onto a substrate (e.g., a silicon wafer) via the projection system. This substrate is coated with a photosensitive layer (photoresist) and positioned within the image plane of the projection system to transfer the mask structure onto the photosensitive coating of the substrate.

[0004] This mask is used for multiple exposures. Therefore, it is crucial that it is free of defects. Consequently, significant effort is required to inspect the mask for defects and repair any identified ones. Defects in such masks can range in size from several nanometers. Repairing these defects necessitates equipment with extremely high spatial resolution for the repair process.

[0005] Suitable apparatus for this purpose is one that initiates localized etching or deposition processes based on particle beam-induced processing. For example, EP 1 587 128 B1 discloses such an apparatus. According to this disclosure, the electron beam of an electron microscope is used to trigger a chemical process. Summary of the Invention

[0006] In order to perform such a repair process without errors, it is desirable to make the edge brightness of the structure observed in the image presentation (scanning electron microscope image) symmetrical through backscattered electrons. Figure 6 An example is shown of the surface of the photolithographic mask 10 imaged in image 604 (note, Figure 6 Only a portion of image 604 is shown. The structure shown there is defined by edges 600 and 602, as illustrated by example for one structure. Figure 6 As indicated by the arrows, edge 600 has a lower brightness than edge 602, which is symmetrical with respect to the axis of symmetry S. Problems may arise in these cases, particularly during automatic structure identification in image 604. An additional factor is that, along with the asymmetry in edge brightness, there may be gradients in grayscale values ​​across the entire image area. This non-uniformity may cause the restoration process to terminate prematurely or delayed, thus leading to defects on the photomask 10.

[0007] Therefore, the object of the present invention is to provide an improved method, particularly to ensure the brightness of symmetrical edges in the observed structure.

[0008] To this end, a column, in particular for analyzing and / or processing a sample, such as a mask for a lithographic apparatus, is proposed. The column comprises:

[0009] a particle source configured to emit a particle beam onto a sample along a first direction;

[0010] a detector arrangement configured to detect particles moving along a second direction opposite to the first direction; and

[0011] a positioning arrangement configured to position the detector arrangement in a plane oriented perpendicular to the first direction.

[0012] Hence, the detector arrangement can always be optimally positioned with respect to an optical axis of a beam path (of the particle beam).

[0013] In particular, the detector arrangement comprises an opening through which the particle beam from the particle source is incident onto the sample during operation of the column. In embodiments, the opening in the detector arrangement is configured concentrically with the optical axis of the beam path or particle beam. This configuration can easily be obtained and maintained by means of the positioning arrangement, in particular even if geometrical changes occur in the column, e.g. due to thermal, mechanical or other effects.

[0014] Further, the positioning arrangement is in particular configured to position the detector arrangement in the plane by adjusting a position of the detector arrangement in the plane. The position of the detector arrangement is for example adjusted from a first position to at least one second position, wherein both the first position and the at least one second position are positions in which the detector arrangement is configured, i.e. capable, to detect particles moving along the second direction. Further, the detector arrangement is for example configured to generate at least one image based on the detected particles in each of the first position and the at least one second position.

[0015] The detector arrangement is in particular configured to detect particles to generate an image based on the detected particles. Further, the positioning arrangement is in particular configured to position the detector arrangement such that asymmetric edge brightness in the generated image can be corrected.

[0016] According to an embodiment, positioning the detector arrangement by means of the positioning arrangement can be done in situ. That is, the positioning is done in a state in which the detector arrangement is already installed in the column. Preferably, positioning the detector arrangement can be done during operation of the column. That is, the detector arrangement is positioned by means of the positioning arrangement while the detector arrangement detects particles moving along the second direction. In particular, the detector arrangement can be positioned by means of the positioning arrangement when the particle beam is incident through the aforementioned opening in the detector arrangement.

[0017] In these embodiments, the detector device preferably does not need to be detached from the column in order to change its position relative to the optical axis, which reduces the maintenance time. Furthermore, detaching the detector device from the column is rather laborious and needs to be performed by specially trained personnel.

[0018] For example, the sample analysis and / or processing as described before can be performed by means of an electron beam and / or an ion beam. The particle source can be an electron beam source and / or an ion beam source. In particular, analyzing the sample can comprise metrology measurements of the sample, in particular of an imaged structure in case of a lithography mask. Processing the sample can in particular be the removal or addition of excess or missing material in regions of a few nanometers in diameter on the sample.

[0019] The detector device can have a detector area through which the incident particles are converted into a light signal. The light signal can be transferred to a photomultiplier. Here, the light is converted into an electrical signal which can be used for further image processing. In front of the detector area, a potential can be applied which serves to allow only particles with an energy above a certain value to be incident on the detector area.

[0020] The first and / or second direction can correspond to a vertical direction or can comprise a component in the vertical direction. The plane can be horizontally configured. The first direction and the second direction are in particular chosen so as to avoid collisions between particles, in particular electrons, flying in the first direction and those flying in the second direction. In particular, for this purpose, the second direction can have an opening angle with respect to the optical axis or the vertical direction.

[0021] According to one embodiment, the column further comprises an arm portion, which comprises the detector device at its free end.

[0022] The detector device can thus be suitably positioned within the column.

[0023] According to a further embodiment, the arm portion is movably held at its other end by means of the positioning device.

[0024] The detector device is moved by the arm portion to be moved.

[0025] According to a further embodiment, the column comprises a housing in which there is a vacuum and the particle beam moves, wherein the detector device is configured in the vacuum and can be positioned in the plane by means of the positioning device without breaking the vacuum.

[0026] The fact that the vacuum is not broken even during the positioning of the detector device provides the advantage that the positioning process can be controlled by means of an image generated by the particles emitted and detected during the positioning process.

[0027] According to a further embodiment, the arm portion extends from the outside through an opening into the housing and is sealed with respect to the housing, wherein the positioning device is preferably arranged outside the housing.

[0028] Thus, the positioning device can be easily accessed.

[0029] According to a further embodiment, a ring seal is provided for sealing purposes, which ring seal sealingly slides over a mating surface of the housing or the arm portion.

[0030] Thus, the vacuum is maintained in a simple manner when the arm portion is moved with respect to the housing.

[0031] Alternative sealing configurations are described, for example, in US 4,800,100, US 5,109,724 and in the document Chatzipetros, J. et al., published in ISSN 0343-7639, October 1986, page 34, under the title "Herstellung von Experimentiereinrichtungen in der Betriebsabteilung Technische Dienste - Mechanische Werkstatten (TD-MW)".

[0032] According to a further embodiment, the positioning device is configured to move the arm portion into and out of the opening along a first axis and also to move the arm portion along a second axis perpendicular to the first axis, wherein the first axis and the second axis span the plane.

[0033] According to a further embodiment, the positioning device comprises at least one or two adjustment screws, which are configured to act on the arm portion in order to adjust the arm portion in the plane.

[0034] The adjustment screws can be adjusted or turned, for example, using a hexagonal wrench. In particular, the detector device can be positioned with an accuracy of less than 10 μm.

[0035] According to one embodiment, the detector device is configured for detecting electrons backscattered from the sample.

[0036] Alternatively or additionally, the detector device can be configured for detecting so-called secondary electrons. It is exactly with this type of detector device (as described above) that it is possible to position, as appropriate, symmetrical edge brightness in the image representation.

[0037] According to a further embodiment, the column comprises a plurality of deflection coils for at least double deflection of the particle beam.

[0038] In the case of a column with double-beam deflection, the asymmetrical edge brightness can be corrected particularly well by positioning the detector device in the plane. Alternatively, the column can also have only single-beam deflection and for this purpose, if appropriate, only one deflection coil. Preferably, the beam is deflected by means of one or more coils before it is incident on the sample.

[0039] In general, the column can be configured such that the relative position of the particle beam and the detector device is settable or selectively settable by (1) energizing one or more deflection coils and (2) positioning the detector device in the plane. In embodiments, steps (1) and (2) can occur in a staggered manner over time or simultaneously.

[0040] According to a further embodiment, the detector device comprises a small tube through which the particle beam is guided.

[0041] In particular, the small tube forms the aforementioned opening of the detector device.

[0042] According to a further embodiment, the column is designed as an electron beam column or an ion beam column.

[0043] According to a further aspect, a processing device for analyzing and / or processing a sample is provided, in particular a scanning electron microscope, comprising the aforementioned column.

[0044] The processing device can for example comprise a gas supply unit for supplying one or more process gases at the surface of the sample, for example into the region of the electron beam focus.

[0045] With a gas supply unit, an electron beam-induced process (EBIP) can be carried out on a sample, for example a lithography mask. This includes for example depositing material and / or etching material on the sample, for example on the surface of the sample.

[0046] The processing device can for example comprise a vacuum housing (first vacuum housing) for generating a vacuum with a first pressure inside the first vacuum housing. The column of the processing device can for example comprise a second vacuum housing configured inside the first vacuum housing. The second vacuum housing is in particular configured for generating a vacuum with a second pressure inside the second vacuum housing. The second pressure is for example greater than the first pressure.

[0047] Hence, a first region (first volume) with a first pressure exists inside the first vacuum housing. The first region is located inside the first vacuum housing, but outside the second vacuum housing. Further, a second region (second volume) with a second pressure exists inside the first vacuum housing. The second region is defined by the second vacuum housing arranged inside the first vacuum housing. In other words, the second region is located inside the first vacuum housing, and inside the second vacuum housing.

[0048] In particular, the detector device is arranged in the vacuum with the second pressure inside the second vacuum housing (i.e. in the second region). Further, a sample stage for supporting a sample is arranged inside the first vacuum housing (but not inside the second vacuum housing) in the vacuum with the first pressure (i.e. in the first region).

[0049] The second vacuum housing of the column with the second pressure (which is higher than the first pressure) prevents process gas supplied to the sample surface (e.g. to the electron beam focus region) from entering inside the second vacuum housing. Hence, damage caused by process gas of the column components (including the detector device) arranged inside the second vacuum housing can be prevented.

[0050] The first pressure has a value in the range of, for example, 10 -7 to 10 -10 millibar and / or 10 -7 to 10 -9 millibar and / or 10 -7 to 10 -8 millibar and / or 10 -8 to 10 -9 millibar and / or 10 -8 to 10 -10 millibar.

[0051] The second pressure has a value in the range of, for example, 10 -5 to 10 -7 millibar and / or 10 -5 to 10 -6 millibar.

[0052] According to a further aspect, a method for analyzing and / or processing a sample, in particular a mask for a lithography apparatus, is presented. The method comprises:

[0053] a) emitting a particle beam onto the sample in a first direction;

[0054] b) detecting particles moving in a second direction opposite to the first direction by means of a detector device; and

[0055] c) positioning the detector device in a plane oriented perpendicular to the first direction.

[0056] According to one embodiment, the positioning according to step c) is performed in situ.

[0057] According to a further embodiment, during step c) the detector device is located in a vacuum. The positioning device for positioning the detector device is preferably located outside the vacuum. Preferably, the positioning of the detector device according to step c) is performed without breaking the vacuum.

[0058] In the present case, processing the sample can in particular comprise depositing or etching on the surface of the sample. One or more process gases are preferably used for depositing or etching.

[0059] Suitable process gases suitable for depositing a material or for growing an elevated structure are in particular alkyl compounds of main group elements, metals or transition elements. Relevant examples thereof are (cyclopentadienyl)trimethylplatinum (CpPtMe3 (Me = CH4)), (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3), tetramethyltin (SnMe4), trimethylgallium (GaMe3), ferrocene (Cp2Fe), bis-aryl chromium (Ar2Cr) and / or carbonyl compounds of main group elements, metals or transition elements such as, for example, chromium hexacarbonyl (Cr(CO)6), molybdenum hexacarbonyl (Mo(CO)6), tungsten hexacarbonyl (W(CO)6), dicobalt octacarbonyl (Co2(CO)8), triruthenium dodecacarbonyl (Ru3(CO) 12 ), iron pentacarbonyl (Fe(CO)5) and / or alkoxide compounds of main group elements, metals or transition elements such as, for example, tetraethoxysilane (Si(OC2H5)4), titanium tetraisopropoxide (Ti(OC3H7)4) and / or halide compounds of main group elements, metals or transition elements such as, for example, tungsten hexafluoride (WF6), tungsten hexachloride (WCl6), titanium tetrachloride (TiCl4), boron trifluoride (BCl3), silicon tetrachloride (SiCl4) and / or complexing elements with main group elements, metals or transition metals such as, for example, copper bis(hexafluoroacetylacetonate) (Cu(C5F6HO2)2), dimethylgold trifluoroacetylacetonate (Me2Au(C5F3H4O2)) and / or organic compounds such as carbon monoxide (CO), carbon dioxide (CO2), aliphatic and / or aromatic hydrocarbons and the like.

[0060] Suitable process gases for etching materials include, for example: xenon difluoride (XeF2), xenon dichloride (XeCl2), xenon tetrachloride (XeCl4), water vapor (H2O), heavy water (D2O), oxygen (O2), ozone (O3), ammonia (NH3), nitrosyl chloride (NOCl), and / or one of the following halides: XNO, XONO2, X2O, XO2, X2O2, X2O4, X2O6, where X is a halide. Other process gases for etching materials are described in detail in the applicant's U.S. Patent Application 13 / 0103281.

[0061] The aforementioned embodiments or features relating to the column are applicable to the processing apparatus and method accordingly, and vice versa.

[0062] In the present context, "one" or "a" is not necessarily limited to a single element. Conversely, multiple elements may be provided, such as two, three, or more. Any other numerical values ​​used herein should not be interpreted as limited to the exact number of elements stated. Rather, unless otherwise stated, there may be numerical deviations of more or less. Furthermore, unless otherwise stated, the described method steps may be performed in a different order, for example, first step c), then step a).

[0063] Other possible embodiments of the present invention include combinations of features or embodiments not explicitly mentioned in the preceding or following descriptions of exemplary embodiments. In such cases, those skilled in the art may add individual aspects to improve or supplement individual basic forms of the invention. Attached Figure Description

[0064] Further advantageous configurations and aspects of the invention are the subject of the dependent claims and the exemplary embodiments of the invention described below. The invention will now be explained in more detail based on preferred embodiments with reference to the accompanying drawings.

[0065] Figure 1 A schematic diagram of a processing apparatus for inspecting and / or repairing photolithographic masks is shown.

[0066] Figure 2 Show Figure 1 The electron beam column of the processing device;

[0067] Figure 3 Show Figure 2 The configuration of the scanning coils of the electron beam cylinder;

[0068] Figure 4 As shown in one embodiment, as observed in the horizontal direction. Figure 2 Detector device for electron beam column;

[0069] Figure 4A by Figure 4 The planar icon shows the detector device along with details of the arm;

[0070] Figure 5 A flowchart illustrating a method according to one embodiment is shown; and

[0071] Figure 6 The structured surface of the photomask is plotted using a planar diagram. Detailed Implementation

[0072] Components that are identical or have the same function have the same reference numerals in the drawing, indicating one or the other to some extent. It should also be noted that the drawings presented are not necessarily to scale.

[0073] Figure 1 An exemplary embodiment of a processing apparatus 100, implemented for example in the form of a scanning electron microscope, is illustrated schematically. The processing apparatus 100 is used to inspect and / or repair samples, such as a photolithography mask 10. The photolithography mask 10 is intended for use, for example, in an EUV or DUV lithography apparatus (not shown).

[0074] The processing apparatus 100 includes an electron beam column 102. This electron beam column includes an electron source 104 that generates an electron beam 106. The electron beam 106 is incident on a photolithographic mask 10. Backscattered electrons and / or secondary electrons are detected by a detector configuration 108 of the electron beam column 102. Therefore, a high-resolution image 604 of the photolithographic mask 10 (electron beam microscope) can be established. Figure 6 ).

[0075] The processing apparatus 100 includes a vacuum housing 110 (first vacuum housing 110). An electron beam column 102 is disposed within the first vacuum housing 110. The same applies to a photolithographic mask 10 disposed on a sample stage 112 below the electron beam column 102. A vacuum 434 within the first vacuum housing 110 is generated by means of a vacuum pump 114. For example, 10... -7 millibars to 10 -8 The residual gas pressure P1 in millibars.

[0076] The electron beam column 102 may include an additional vacuum housing 110' (a second vacuum housing 110'), such as Figure 1 As shown. The second vacuum housing 110' of the electron beam column 102 is, for example, disposed inside the first vacuum housing 110 of the processing apparatus 100. The pressure inside the second vacuum housing 110' is indicated by reference numeral P2. The vacuum 434 inside the second vacuum housing 110' is generated by means of a second vacuum pump (not shown). For example, the residual gas pressure P2 inside the second vacuum housing 110' is 10. -5 millibars to 10 -6 millibar.

[0077] The electron beam column 102 can interact with a supplied process gas to perform electron beam induced process (EBIP), which is supplied from the outside via gas line 118 to the focal region of the electron beam 106, for example, by a gas supply unit 116. This specifically involves depositing material on a photomask 10 or etching its material. Specifically, the control computer 120 of the processing apparatus 100 is configured to control the electron beam column 102, the sample stage 112, and the gas supply unit 116 in a manner suitable for this purpose. Specifically, a computer program 122 is stored on the control computer 120 and controls the processing apparatus 100 to perform a predetermined method.

[0078] Figure 2 Show more details Figure 1 The electron beam column 102. Through... Figure 1 Compare, Figure 2 Further shown is an electron beam column 102 comprising an anode aperture 200 disposed downstream of an electron source 104 in the beam path. Following the anode aperture 200 in the beam path is an aperture stop 202 having one or more openings. A first condenser 206 of a dual condenser lens 208 is assigned to a portion 204 of the beam path between the anode aperture 200 and the aperture stop 202. Following the aperture stop 202 is another aperture stop 210. A portion 212 of the beam path between the aperture stop 202 and the other aperture stop 210 (e.g., a pressure-level aperture stop) is surrounded by a second condenser 217 of the dual condenser lens 208. Following the aperture stop 210 in the beam path is a pre-converted... Figure 1 The detector configuration mentioned is 108.

[0079] In detail, detector configuration 108 may include an energy-selective backscatter (ESB) detector 214 and / or a secondary electron (SE) detector 216. ESB detector 214 is configured to detect backscattered electrons 215 from electron beam 106. For this purpose, ESB detector 214 detects electrons 215 having energies, for example, starting from 200 eV. ESB detector 214 may include a filter grating 220 on its underside. SE detector 216 is configured to detect secondary electrons 217. These are, for example, electrons 217 with energies up to 50 eV, which are emitted from photolithographic mask 10 through electron beam 106.

[0080] The additional beam path portion 218 following the detector configuration 108 is surrounded by a magnetic lens 221. The electron beam 106 is ultimately led from the electron beam column 102 to the photomask 10 (or some other sample) via two or more scanner coils 222, 224 and a preferred electrostatic lens 226, the scanner coils being responsible for scanning the photomask 10.

[0081] The aforementioned configuration of the electron beam column 102 should be understood as purely illustrative and can be implemented differently in various regions. For example, a single condenser lens can be provided instead of the dual condenser lenses 208. Alternatively, an ion beam column can be provided instead of the electron beam column 102.

[0082] Figure 3 It shows that it has been combined Figure 2 The described scanner coils 222 and 224 are arranged continuously in the beam path. Each of the scanner coils 222 and 224 may have a ring design, and Figure 3 A cross-sectional view perpendicular to the annular plane is shown. Figure 3 The illustrations in the diagram can also be called Figure 2 Vertical cross-sectional view.

[0083] Furthermore, Figure 3 The optical axis 300 is shown. An undeflected electron beam 106 travels along this optical axis 300 from electron source 104 (see [reference]). Figure 1 and Figure 2 The electron beam 106 moves toward the photomask 10. By means of scanner coils 222 and 224, the electron beam 106 can be double-deflected from the optical axis 300, so that the double-deflected electron beam 302, after passing through the last coil of the two scanner coils 224, flies parallel to the optical axis 300 again. The imaging quality achievable using the electron beam cylinder 102 can be improved by means of double beam deflection.

[0084] Specifically, in embodiments with dual-beam deflection, such as Figure 4 As shown, the localizable detector device has been proven effective for obtaining edges 600, 602 in image presentation 604 (see [reference]). Figure 6 The symmetrical edge brightness is particularly advantageous. A more detailed explanation follows based on... Figure 4 This is a purely exemplary setting.

[0085] For example, Figure 4 The detector device shown is ESB detector 214, but in other embodiments it may be SE detector 216 or some other detector.

[0086] ESB detector 214 is, for example, disposed within a second vacuum housing 110' of electron beam column 102. ESB detector 214 may include an opening, which in this case is designed, for example, in the form of a tube 400. Electron beam 106 passes through tube 400 in a vertical direction R1 and is incident on sample 10. (As combined...) Figure 2As explained, electrons 215 backscattered from sample 10 are detected by ESB detector 214. For this purpose, ESB detector 214 may selectively include a filter grating 220 on its lower side. As electrons in electron beam 106 move downwards in the vertical direction R1, backscattered electrons 215 move in the opposite direction R2 (i.e., have at least a component pointing in the opposite direction R2). Backscattered electrons 215 typically have an opening angle α relative to electron beam 106 or optical axis 300 (see [reference]). Figure 3 This has the effect that the backscattered electrons 215 do not scan back through the tube 400, but instead scan onto the detector region 402 below the ESB detector 214.

[0087] ESB detector 214 is configured such that it can be positioned in the xy-plane by means of positioning device 404. In the present case, the xy-plane corresponds, for example, to a horizontal plane. The z-direction perpendicular to it corresponds to the vertical direction. For example, detector region 402 for detecting backscattered electrons 215 also extends in the xy-plane. Particle beam 106 moves downward in the z-direction (direction R1). Backscattered electrons 215 fly upward in the z-direction (direction R2).

[0088] Figure 4A Detailed Figure 4 Floor plan. Figure 4 and 4A The detector 214 is mounted on one end 408 of the arm 406. The arm 406 is movably held at its other end 410. The arm 406 extends into the second vacuum housing 110' via an opening 412 (specifically, a hole). For example, a flange 414 or some other suitable geometry that allows the arm 406 to seal relative to the second vacuum housing 110' may be formed on the arm 406. According to the exemplary variant shown herein, the flange 414 abuts in a vacuum-type manner against a mating surface 418 (outer side) of the housing 110' via an annular seal 416. The annular seal 416 may slide sealingly on the mating surface 418, or a mating surface 419 on the flange 414 (as associated with the arm 406) may slide sealingly on the seal 416 in the yz plane to ensure a vacuum seal when the arm 406 and therefore the flange 414 are positioned in the xy plane by the positioning device 404.

[0089] For example, the positioning device 404 may include two or more adjusting screws 420, 422. The screws 420, 422 may screw into openings 424, 426 in the housing 428 (or some other mounting component). Figure 4 and 4ABy screwing screws 420 and 422 in and out, for example, using a hex wrench, screws 420 and 422 can apply corresponding tension or pressure to the end 410 of arm 406 by means of their ends 430 and 432. Therefore, arm 406, and thus ESB detector 214, together with filter grating 220, moves in the xy plane. The second vacuum housing 110' and housing 428 are arranged to be stationary relative to each other and are mounted on base 436 for this purpose.

[0090] This movement of the ESB detector 214 along with the filter grating 220 can be performed in situ, that is, even when the ESB detector 214 along with the filter grating 220 is already installed in the electron beam column 102, such as Figure 4 and 4A As shown. Specifically, in this case, the ESB detector 214 is configured in a vacuum 434'. That is, the vacuum 434' is not disrupted to adjust the position of the ESB detector 214. In particular, the position can also be adjusted when the electron beam 106 moves through the tube 400 (i.e., simultaneously).

[0091] The inventors have discovered that, when image 604 is recorded by ESB detector 214, this adjustment by ESB detector 214 can particularly perfectly counteract asymmetric edge brightness (see...). Figure 6 In this case, the current scanning electron microscope image 604 is examined in situ, and the ESB detector 214 is simultaneously shifted until the edge brightness is symmetrical.

[0092] Figure 5 A flowchart illustrating a method for analyzing and / or processing a sample, specifically a mask 10 for a photolithography apparatus, is shown schematically according to one embodiment.

[0093] In step S1, particle beam 106 (see...) Figures 1 to 4 It is emitted onto sample 10 along the first direction R1.

[0094] In step S2, particles 215 and 217 moving along a second direction R2 opposite to the first direction R1 are detected by means of detector devices 214 and 216.

[0095] In step S3, detector devices 214 and 216 are positioned in planes x and y perpendicular to the first direction R1. Positioning in step S3 can be performed in situ. Specifically, in this case, detector devices 214 and 216 are located in a vacuum 434', while the positioning device 404 for positioning detector devices 214 and 216 is located outside the vacuum 434'.

[0096] The processing apparatus 100 may be specifically designed as an electron beam microscope, including the aforementioned column 102. This processing apparatus 100 is specifically configured for analyzing sample 10. Alternatively or additionally, the processing apparatus 100 may be designed for processing sample 10. This processing may specifically involve etching or deposition using one or more process gases. For this purpose, the processing apparatus 100 may include, for example, one or more supply devices 116, 118 for one or more process gases.

[0097] Although the invention has been described based on exemplary embodiments, it can be modified in various different ways.

[0098] List of reference numerals

[0099] 10 photolithography masks

[0100] 100 processing device

[0101] 102 electron beam cylinder

[0102] 104 electronic source

[0103] 106 electron beam

[0104] 108 detector configuration

[0105] 110, 110' vacuum housing

[0106] 112 Sample Stage

[0107] 114 vacuum pump

[0108] 116 Gas Supply Unit

[0109] 118 gas pipeline

[0110] 120 control computer

[0111] 122 Computer Programs

[0112] 200 anode aperture

[0113] 202 aperture stop

[0114] 204 beam path section

[0115] 206 Condenser

[0116] 207 Condenser

[0117] 208 Double Condenser

[0118] 210 aperture

[0119] 212 beam path section

[0120] 214ESB detector

[0121] 215 backscattered electrons

[0122] 216SE detector

[0123] 220 filter grating

[0124] 221 Magnetic Lens

[0125] 222 Scanner Coil

[0126] 224 Scanner Coil

[0127] 226 electrostatic lens

[0128] 300 optical axis

[0129] 302 deflected particle beam

[0130] 400 small tubes

[0131] 402 detector area

[0132] 404 positioning device

[0133] 406 arm

[0134] 408 end

[0135] 410 end

[0136] 412 opening

[0137] 414 flange

[0138] 418 mating surface

[0139] 419 mating surface

[0140] 420 screws

[0141] 422 screws

[0142] 424 opening

[0143] 426 opening

[0144] 428 housing

[0145] 430 end

[0146] 432 end

[0147] 434, 434' vacuum

[0148] 436 base

[0149] 600 edge

[0150] 602 edge

[0151] 604 image

[0152] P1 First Pressure

[0153] P2 Second Pressure

[0154] R1 First Direction

[0155] R2 Second Direction

[0156] S-axis of symmetry

[0157] S1 – S3 Method Steps

[0158] x, y, z axes

Claims

1. A column (102) for analyzing and / or processing a sample (10), the sample being, for example, a mask for a photolithography apparatus, the column comprising: A particle source (104) configured to emit a particle beam (106) onto the sample (10) along a first direction (R1); Detector devices (214, 216) configured to detect particles (215, 217) moving along a second direction (R2) opposite to the first direction (R1); and A positioning device (404) is configured to position the detector device (214, 216) in a plane (x, y) perpendicular to the first direction (R1).

2. The column as claimed in claim 1, wherein: The positioning device (404) is configured to adjust the position of the detector device (214, 216) from a first position to at least one second position; and The detector device (214, 216) is configured to detect particles (215, 217) at both the first position and the at least one second position; and / or The detector device (214, 216) is configured to generate at least one image (604) based on particles (215, 217) detected in each of the first position and the at least one second position.

3. The column as described in claim 1 or 2, wherein, The detector device (214, 216) is configured to detect particles (215, 217) used to generate an image (604), and the positioning device (404) is configured to position the detector device (214, 216) such that asymmetric edge brightness in the generated image (604) is corrected.

4. The column as claimed in any one of claims 1 to 3, further comprising an arm (406) having the detector device (214, 216) at one end (408).

5. The column as described in claim 4, wherein, The arm (406) is movably held at its other end (410) by means of the positioning device (404).

6. The column as claimed in any one of claims 1 to 5, further comprising a housing (110') in which a vacuum (434') exists and the particle beam (106) moves, wherein the detector device (214, 216) is disposed in the vacuum (434') and is capable of being positioned in the plane (x, y) by means of the positioning device (404) without disrupting the vacuum (434').

7. The column as described in claim 4 or 5 and 6, wherein, The arm (406) extends from the outside into the housing (110') through an opening (412) and is sealed relative to the housing, wherein the positioning device (404) is preferably disposed outside the housing (110').

8. The column as claimed in claim 7, wherein, An annular seal (416) is provided for sealing purposes, and the annular seal slides in a sealing manner on the mating surfaces (418, 419) of the housing (110') or the arm (406).

9. The column as claimed in claim 7 or 8, wherein, The positioning device (404) is configured to move the arm (406) into and out of the opening (412) along a first axis (x), and also to move the arm along a second axis (y) perpendicular to the first axis (x), wherein the first axis and the second axis cross the plane (x, y).

10. The column as claimed in any one of claims 4 to 9, wherein, The positioning device (404) includes at least one or two adjusting screws (420, 422) configured to act on the arm (406) to adjust the arm in the plane (x, y).

11. The column as claimed in any one of claims 1 to 10, wherein, The detector device (214) is configured to detect electrons (215) backscattered from the sample (10).

12. The column as claimed in any one of claims 1 to 11, comprising a plurality of detector coils (222, 224) for at least double deflection of the particle beam (106).

13. The column as claimed in any one of claims 1 to 12, wherein the column is designed as an electron beam column (102) or an ion beam column.

14. A processing apparatus (100) for analyzing and / or processing a sample (10), particularly a mask for a photolithography apparatus, the processing apparatus comprising a column (102) as claimed in any one of claims 1 to 13.

15. The processing apparatus of claim 14, further comprising the column (102) of claim 6, wherein... The processing device (100) includes a first housing (110) in which a vacuum (434) with a first pressure (P1) exists; The housing (110') of the column (102) is a second housing (110') having a vacuum (434') with a second pressure (P2), wherein the vacuum (434') exists and the detector device (214, 216) is disposed therein; The second housing (110') is housed within the first housing (110); The second pressure (P2) is higher than the first pressure (P1); and The sample stage (112) for supporting the sample (10) is housed in the first housing (110) in a vacuum (434) with the first pressure (P1).

16. A method for analyzing and / or processing a sample (10), the sample being particularly a mask for a photolithography apparatus, the method comprising: a) The particle beam (106) is emitted (S1) onto the sample (10) along the first direction (R1); b) Detecting (S2) particles (215, 217) moving in a second direction (R2) opposite to the first direction (R1) by means of detector devices (214, 216); and c) Position the detector device (214, 216) in a plane (x, y) perpendicular to the first direction (R1).

17. The method of claim 16, wherein, According to step c), the positioning is performed in situ.

18. The method of claim 16 or 17, wherein, During step c), the detector device (214, 216) is located in a vacuum (434'), wherein the positioning of the detector device (214, 216) according to step c) is preferably carried out without breaking the vacuum.

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