Photoresist coating equipment and photoresist coating method
The photoresist coating equipment and method based on multispectral target monitoring and zoned dispensing control have solved the problems of uncontrolled thickness uniformity and edge effects in the photoresist spin coating process, and achieved precise control and improved uniformity of photoresist coating.
Patent Information
- Application Number
- CN202511302465.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-12
- Publication Date
- 2025-12-19
AI Technical Summary
During the spin coating process of photoresist, there are problems of uncontrolled thickness uniformity and edge effect, which leads to differences in the thickness of the photoresist at the edge and center of the wafer. Furthermore, mechanical contact inspection is prone to scratching the photoresist layer and has poor response delay and detection uniformity.
A multi-spectral target monitoring device is used to monitor the multi-dimensional data of the photoresist coating layer in real time. The coating state is judged by the control device, a dispensing compensation coefficient is generated, and the dispensing is controlled by a partitioned dispensing device to achieve closed-loop control of photoresist coating.
It effectively solves the problems of thickness uniformity loss and edge effect in the spin coating process of thick photoresist, realizes precise control of photoresist coating, and improves detection accuracy and uniformity.
Smart Images
Figure CN121165397A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present disclosure relates to the technical field of semiconductor manufacturing, and particularly relates to a photoresist coating device and a photoresist coating method. BACKGROUND
[0002] In advanced packaging technology, a high-aspect-ratio via structure often needs to be coated with a photoresist with a large thickness for photolithography. However, in the spin coating process of the photoresist, due to the centrifugal force and the viscosity of the photoresist itself, there is a serious difference in the thickness of the photoresist between the edge and the center of the wafer, and the conventional mechanical contact detection is prone to scratching the photoresist layer and has problems of response delay and poor detection uniformity. SUMMARY
[0003] Embodiments of the present disclosure provide a photoresist coating device and a photoresist coating method, which can solve the problems of thickness uniformity loss of control and edge effect of thick photoresist in the spin coating process.
[0004] In one aspect, some embodiments of the present disclosure provide a photoresist coating device, comprising: a multi-spectral target monitoring device, a control device, and a partitioned photoresist dropping device.
[0005] The multi-spectral target monitoring device is configured to monitor a photoresist coating layer in real time and obtain multi-dimensional data of the photoresist coating layer.
[0006] The control device is connected with the multi-spectral target monitoring device and is configured to determine whether a photoresist coating state of the photoresist coating layer meets a process target based on the multi-dimensional data, to determine a photoresist dropping compensation coefficient of a target photoresist coating area according to the multi-dimensional data in response to the photoresist coating state of the photoresist coating layer not meeting the process target, and to generate a photoresist dropping control parameter according to the photoresist dropping compensation coefficient.
[0007] The partitioned photoresist dropping device is connected with the control device and is configured to drop photoresist to the target photoresist coating area in response to the photoresist dropping control parameter.
[0008] In some embodiments of the present disclosure, the multi-dimensional data of the photoresist coating layer comprises geometric size dimensional data and chemical state dimensional data. The multi-spectral target monitoring device comprises a dual-band infrared monitoring module and a data fusion module.
[0009] The dual-band infrared monitoring module is configured to obtain the geometric size dimensional data based on first-band spectral monitoring and obtain the chemical state dimensional data based on second-band spectral monitoring; wherein the wavelength ranges of the first band and the second band are different.
[0010] The data fusion module is connected with the dual-band infrared monitoring module and is configured to generate a global three-dimensional photoresist state model of the photoresist coating layer in real time according to the geometric size dimensional data and the chemical state dimensional data.
[0011] Correspondingly, the control device is connected with the data fusion module and is configured to determine a drop compensation coefficient of the target glue application area based on the global three-dimensional glue state model.
[0012] In some embodiments of the present disclosure, the dual-band infrared monitoring module comprises a detector array. The detector array is configured to scan the photoresist coating layer according to a preset spiral path.
[0013] Optionally, the interval between adjacent detectors in the detector array is not greater than 15 mm.
[0014] Optionally, the scanning speed of the detector array comprises 10 mm / s-100 mm / s.
[0015] In some embodiments of the present disclosure, the sampling period of the data fusion module is less than or equal to 5 s.
[0016] In some embodiments of the present disclosure, the target glue application area comprises a center area and / or an edge area. The drop control parameters comprise first drop control parameters for the center area and second drop control parameters for the edge area.
[0017] Correspondingly, the partitioned drop glue device comprises a partitioned micro-nozzle and a glue delivery pipeline. The partitioned micro-nozzle comprises a first micro-nozzle for the center area and a second micro-nozzle for the edge area. The glue delivery pipeline is connected to the first micro-nozzle and the second micro-nozzle, respectively, and is configured to transmit a first photoresist fluid to the first micro-nozzle in response to the first drop control parameters, and transmit a second photoresist fluid to the second micro-nozzle in response to the second drop control parameters.
[0018] In some embodiments of the present disclosure, the partitioned drop glue device further comprises a pneumatic pressure controller.
[0019] The pneumatic pressure controller is arranged on the glue delivery pipeline and is configured to apply a first pressure to the first photoresist fluid in response to the first drop control parameters, and apply a second pressure to the second photoresist fluid in response to the second drop control parameters.
[0020] In some embodiments of the present disclosure, the partitioned drop glue device further comprises a temperature control module arranged inside the glue delivery pipeline. The temperature control module is configured to regulate the temperature of the first photoresist fluid and the second photoresist fluid.
[0021] On the other hand, some embodiments of the present disclosure provide a photoresist coating method for applying to the photoresist coating equipment described in some embodiments above. The photoresist coating method comprises the following steps:
[0022] Pre-treating the substrate and the photoresist;
[0023] Coating the photoresist on the substrate, and monitoring the photoresist coating layer in real time to obtain multi-dimensional data of the photoresist coating layer;
[0024] determine, based on the multi-dimension data, whether the coating state of the photoresist coating layer meets a process target;
[0025] In response to the coating state of the photoresist coating layer not meeting the process target, determine a drop compensation coefficient of a target coating area according to the multi-dimension data, generate a drop control parameter according to the drop compensation coefficient, and drop photoresist onto the target coating area on the substrate in response to the drop control parameter.
[0026] In some embodiments of the present disclosure, the multi-dimension data of the photoresist coating layer includes geometric size dimension data and chemical state dimension data. The determination of whether the coating state of the photoresist coating layer meets the process target based on the multi-dimension data includes:
[0027] determining, according to the geometric size dimension data, a thickness relative deviation of the photoresist coating layer;
[0028] determining, according to the chemical state dimension data, a solvent concentration gradient of the photoresist coating layer;
[0029] In response to the thickness relative deviation being less than or equal to a first target threshold value and the solvent concentration gradient being less than or equal to a second target threshold value, determining that the coating state of the photoresist coating layer meets the process target;
[0030] In response to the thickness relative deviation being greater than the first target threshold value and / or the solvent concentration gradient being greater than the second target threshold value, determining that the coating state of the photoresist coating layer does not meet the process target.
[0031] In some embodiments of the present disclosure, the thickness relative deviation of the photoresist coating layer includes a difference between a first thickness of the photoresist coating layer at an edge area and a second thickness of the photoresist coating layer at a center area.
[0032] Correspondingly, the photoresist coating method further includes: in response to the difference between the first thickness and the second thickness being greater than 5 μm, increasing the drop flow of the edge area by 5% to 10%.
[0033] The embodiments of the present disclosure can have / at least have the following advantages:
[0034] In the embodiments of the present disclosure, the multi-spectral target monitoring device is used to monitor the photoresist coating layer in real time, and multi-dimensional data of the photoresist coating layer is obtained. The control device can determine whether the photoresist coating state meets the process target based on the multi-dimensional data, so as to determine the glue dropping compensation coefficient of the target coating area according to the multi-dimensional data when the photoresist coating state does not meet the process target, and generate glue dropping control parameters according to the glue dropping compensation coefficient, so that the partition glue dropping device can drop glue to the target coating area in response to the glue dropping control parameters. In this way, the embodiments of the present disclosure break through the limitation of a single parameter, and can cope with the complex coupling effect of thick glue process according to the multi-dimensional data of the photoresist coating layer, effectively evaluate whether the photoresist coating state meets the process target, and dynamically feed back the glue dropping control parameters to the partition glue dropping device according to the multi-dimensional data when the photoresist coating state does not meet the process target, so as to realize closed-loop control of photoresist coating, and solve the problems of thickness uniformity loss of control and edge effect of thick photoresist in the spin coating process.
[0035] The details of one or more embodiments of the present disclosure are presented in the following drawings and description. Other features, objects, and advantages of the present disclosure will become apparent from the description, drawings, and claims. BRIEF DESCRIPTION OF DRAWINGS
[0036] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present disclosure, and other drawings can be obtained by those skilled in the art without creative labor.
[0037] Figure 1 A structural block diagram of a photoresist coating device provided in some embodiments of the present disclosure is shown in the figure.
[0038] Figure 2 A structural block diagram of another photoresist coating device provided in some embodiments of the present disclosure is shown in the figure.
[0039] Figure 3 A structural schematic diagram of a partition glue dropping device provided in some embodiments of the present disclosure is shown in the figure.
[0040] Figure 4 A flowchart of a photoresist coating method provided in some embodiments of the present disclosure is shown in the figure.
[0041] Explanation of reference signs:
[0042] 100 - photoresist coating apparatus, 10 - multi-spectrum target monitoring device, 11 - dual-band infrared monitoring module, 111 - detector array, 12 - data fusion module, 20 - control device, 30 - zoned droplet coating device, 31 - zoned micro-nozzle, 311 - first micro-nozzle, 312 - second micro-nozzle, 32 - photoresist delivery line, 33 - pneumatic pressure controller, 34 - temperature control module. DETAILED DESCRIPTION
[0043] For the purpose of promoting an understanding of the disclosure, the disclosure will now be described more fully with reference to the related drawings. The embodiments of the disclosure are shown in the drawings. However, the disclosure can be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and fully convey the scope of the disclosure to those skilled in the art.
[0044] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The terminology used in the description of the disclosure herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure.
[0045] It should be understood that, although the terms first, second, etc. can be used herein to describe various elements, components, regions, and / or sections, these elements, components, regions, and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, or section from another element, component, region, or section. Thus, a first element, component, region, or section discussed below could be termed a second element, component, region, or section without departing from the teachings of the disclosure.
[0046] As used herein, the singular forms "a", "an" and "the" include plural referents unless the context clearly dictates otherwise. It should also be understood that the term "comprising" or "having" etc. specifies the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but does not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. Meanwhile, in the specification, the term "and / or" includes any and all combinations of the associated listed items.
[0047] In advanced packaging technology, high aspect ratio via structures often need to be coated with a photoresist with a large thickness for photolithography, for example, the thickness of the photoresist layer can exceed 100 μm, which can easily cause problems such as uniformity detection lag (e.g. response delay time > 5 s) and edge effect without solution. Here, the edge effect refers to the fact that the surface of the gel at the edge of the wafer will form an edge bead due to unbalanced tension.
[0048] Based on this, the present embodiment provides a photoresist coating device and a photoresist coating method, which can solve the problems of thickness uniformity loss of control and edge effect of thick photoresist in the spin coating process.
[0049] Please refer to Figure 1 The photoresist coating device 100 provided by the present embodiment comprises a multi-spectral target monitoring device 10, a control device 20 and a partitioned glue dropping device 30.
[0050] The multi-spectral target monitoring device 10 is configured to monitor the photoresist coating layer in real time and obtain multi-dimensional data of the photoresist coating layer.
[0051] Exemplarily, the multi-dimensional data of the photoresist coating layer comprises geometric size dimensional data and chemical state dimensional data.
[0052] Optionally, the geometric size dimensional data of the photoresist coating layer at least comprises the glue layer thickness.
[0053] Optionally, the chemical state dimensional data of the photoresist coating layer at least comprises the solvent concentration.
[0054] The control device 20 is connected with the multi-spectral target monitoring device 10 and is configured to judge whether the glue coating state of the photoresist coating layer meets the process target based on the multi-dimensional data, to determine a glue dropping compensation coefficient of a target glue coating area according to the multi-dimensional data and to generate glue dropping control parameters according to the glue dropping compensation coefficient in response to the glue coating state of the photoresist coating layer not meeting the process target.
[0055] Exemplarily, the target glue coating area comprises a center area and / or an edge area.
[0056] The partitioned glue dropping device 30 is connected with the control device 20 and is configured to drop glue to the target glue coating area in response to the glue dropping control parameters.
[0057] In the embodiments of the present disclosure, the multi-spectral target monitoring device 10 is used to monitor the photoresist coating layer in real time, and multi-dimensional data of the photoresist coating layer is obtained. The control device 20 can determine whether the photoresist coating state meets the process target based on the multi-dimensional data, determine the drop compensation coefficient of the target coating area according to the multi-dimensional data when the photoresist coating state does not meet the process target, and generate a drop control parameter according to the drop compensation coefficient, so that the partitioned drop device 30 can respond to the drop control parameter to drop glue to the target coating area. In this way, the embodiments of the present disclosure break through the limitation of a single parameter, can cope with the complex coupling effect of thick glue process according to the multi-dimensional data of the photoresist coating layer, effectively evaluate whether the photoresist coating state meets the process target, and can dynamically feed back the drop control parameter to the partitioned drop device according to the multi-dimensional data when the photoresist coating state does not meet the process target, realize closed-loop control of photoresist coating, and solve the problems of thickness uniformity loss of control and edge effect of thick photoresist in the spin coating process.
[0058] In some embodiments of the present disclosure, the multi-dimensional data of the photoresist coating layer includes geometric size dimensional data and chemical state dimensional data. Please refer to Figure 2 The multi-spectral target monitoring device 10 includes a dual-band infrared monitoring module 11 and a data fusion module 12. The dual-band infrared monitoring module 11 is configured to obtain geometric size dimensional data based on first band spectral monitoring and obtain chemical state dimensional data based on second band spectral monitoring; wherein the wavelength ranges of the first band and the second band are different. The data fusion module 12 is connected with the dual-band infrared monitoring module 11 and is configured to generate a global three-dimensional glue state model of the photoresist coating layer in real time according to the geometric size dimensional data and the chemical state dimensional data.
[0059] Correspondingly, the control device 20 is connected with the data fusion module 12 and is configured to determine the drop compensation coefficient of the target coating area based on the global three-dimensional glue state model.
[0060] Optionally, the sampling period of the data fusion module 12 is less than or equal to 5s.
[0061] Optionally, the multi-spectral target monitoring device 10 further includes an infrared light source. The infrared light source is configured to emit infrared light of different wavelength ranges, such as infrared light of the first band and infrared light of the second band, in response to the demand.
[0062] In some examples, the infrared light source includes but is not limited to a distributed feedback (DFB) laser.
[0063] Optionally, the first band includes but is not limited to a 1.55μm band, for example, the glue layer thickness can be obtained in real time by infrared interference phase difference inversion.
[0064] Exemplarily, when the infrared light irradiates the photoresist coating layer and is reflected at the film interface, an interference effect is generated, and the corresponding optical interference principle formula is: . Wherein:
[0065]
[0066] Therefore, by vertically irradiating the photoresist coating layer with infrared light, the interference fringes of the reflected light can be detected, and the thickness d of the photoresist coating layer can be calculated according to the formula: .
[0067] Optionally, the second wave band includes but is not limited to the 3.4 μm wave band, for example, the solvent concentration can be dynamically calculated based on the solvent characteristic absorption peak.
[0068] Exemplarily, the solvent characteristics of the photoresist coating layer can be analyzed based on the Lambert-Beer law: A = εcL = log 10 (I0 / I), wherein:
[0069]
[0070] Therefore, the correlation between the solvent concentration and the thickness of the photoresist coating layer conforms to: εcL = log 10 (I0 / I). After using a fixed wavelength (for example, 3.4 μm) and a known optical path length L (i.e., the thickness d of the photoresist coating layer), the solvent concentration c can be obtained by back calculation of the absorbance A.
[0071] From the above, the dual-waveband infrared monitoring module 11 can simultaneously capture multi-dimensional data including the thickness of the photoresist coating layer and the dynamic evaporation of the solvent. Moreover, compared with the traditional measurement accuracy of ±3 μm, the accuracy of the thickness of the photoresist coating layer monitored by the dual-waveband infrared monitoring module 11 can be effectively improved to ±0.3 μm.
[0072] In addition, compared with the traditional measurement that cannot monitor the solvent concentration and make flow leveling prediction, the photoresist coating device 100 provided by the embodiment of the present disclosure not only can monitor the solvent concentration in real time and control the measurement error of the solvent concentration to be within 5%, but also can make flow leveling failure prediction according to the above multi-dimensional data, for example, the flow leveling failure prediction can be made in advance 10s~15s, and the self-closed loop optimization of the process parameters can be realized accordingly.
[0073] In some embodiments, the dual-waveband infrared monitoring module 11 includes a detector array 111. The detector array 111 is configured to scan the photoresist coating layer according to a preset spiral path.
[0074] Optionally, the interval between adjacent detectors in the detector array 111 is not greater than 15 mm.
[0075] In some examples, the detector array 111 is a 7x7 HgCdTe (MCT) detector array, which can cover the full surface of a wafer for a 49-point array scan. The diameter of the wafer is, for example, 300 mm.
[0076] Optionally, the scanning speed of the detector array 111 includes 10 mm / s-100 mm / s, that is, the scanning speed of the detector array 111 can be adjusted in the range of 10 mm / s-100 mm / s.
[0077] Optionally, the scanning trajectory of the detector array 111 includes but is not limited to a spiral scanning trajectory.
[0078] In the embodiments of the present disclosure, the dual-band infrared monitoring module 11 is adopted and the detector array 111 is arranged inside to perform real-time monitoring of the photoresist coating layer. Compared with mechanical contact detection, mechanical vibration error is effectively eliminated, which is beneficial to improving the spatial resolution. For example, the spatial resolution can be effectively improved to 5 mm x 5 mm.
[0079] It should be noted that in some embodiments of the present disclosure, the maximum photoresist layer thickness dmax that can be monitored by the dual-band infrared monitoring module 11 can be calculated and determined according to the penetration limit formula: , wherein:
[0080]
[0081] For example, taking the photoresist material as epoxy negative photoresist, the infrared light source as a DFB laser, and the detector as a liquid nitrogen-cooled MCT detector as an example, the photoresist absorption coefficient a of the epoxy negative photoresist at 1.55 pm is 0.1 cm - ¹, the initial intensity I0 of the incident light output by the DFB laser is 100 mW / cm², and the sensitivity threshold Imin under the noise limit of the detector is 0.1 nW / cm². The maximum photoresist layer thickness that can be monitored by the dual-band infrared monitoring module 11 is 300 pm.
[0082] Optionally, taking the photoresist material as epoxy negative photoresist as an example, the dual-band infrared monitoring module 11 provided in the embodiments of the present disclosure can effectively monitor a photoresist layer thickness of ≤300 pm, which can be more than doubled compared with the conventional measurement thickness (for example, ≤150 pm).
[0083] Optionally, taking the photoresist material as silicon-based negative photoresist as an example, the dual-band infrared monitoring module 11 provided in the embodiments of the present disclosure can effectively monitor a photoresist layer thickness of ≤250 pm, which can be more than doubled compared with the conventional measurement thickness (for example, ≤120 pm).
[0084] It is worth mentioning that in some embodiments of the present disclosure, the data fusion module 12 is further configured to correct the photoresist layer thickness measured by the dual-band infrared monitoring module 11 to avoid false photoresist layer thickness measurement caused by solvent volatilization in the photoresist coating layer.
[0085] Optionally, the corrected photoresist layer thickness , wherein, is the photoresist layer thickness measurement value, c is the molar concentration of the solvent concentration, n0 is the refractive index of the photoresist coating layer, and k = 0.02.
[0086] In some embodiments of the present disclosure, the photoresist dropping control parameters include first photoresist dropping control parameters for the center region and second photoresist dropping control parameters for the edge region. Please refer to Figure 3 , the partitioned photoresist dropping device 30 includes a partitioned micro-nozzle 31 and a photoresist delivery pipeline 32.
[0087] The partitioned micro-nozzle 31 includes a first micro-nozzle 311 for the center region and a second micro-nozzle 312 for the edge region. In this way, independent control can be performed for the center region and the edge region, and the corresponding photoresist fluid flow gradient can be matched.
[0088] The photoresist delivery pipeline 32 is in communication with the first micro-nozzle 311 and the second micro-nozzle 312, respectively, and is configured to: in response to the first photoresist dropping control parameters, transmit the first photoresist fluid to the first micro-nozzle 311; and in response to the second photoresist dropping control parameters, transmit the second photoresist fluid to the second micro-nozzle 312.
[0089] In some embodiments of the present disclosure, please continue to refer to Figure 3 The partitioned photoresist dropping device 30 further includes a pneumatic pressure controller 33. The pneumatic pressure controller 33 is arranged on the photoresist delivery pipeline 32 and is configured to: in response to the first photoresist dropping control parameters, apply a first pressure to the first photoresist fluid; and in response to the second photoresist dropping control parameters, apply a second pressure to the second photoresist fluid. Wherein, the pressure provided by the pneumatic pressure controller 33 can increase with the decrease of the solvent concentration in the corresponding photoresist fluid, which is beneficial to match the dynamic pressure increase of the viscosity change of the photoresist fluid.
[0090] In some embodiments of the present disclosure, please continue to refer to Figure 3 The partitioned photoresist dropping device 30 further includes a temperature control module 34 arranged inside the photoresist delivery pipeline 32. The temperature control module 34 is configured to regulate the temperature of the first photoresist fluid and the second photoresist fluid, for example, to achieve constant temperature photoresist delivery to eliminate the influence of environmental temperature fluctuation on the photoresist fluid.
[0091] Optionally, the temperature control module 34 includes but is not limited to a Peltier temperature control module.
[0092] Some embodiments of the present disclosure also provide a photoresist coating method to be applied to the photoresist coating apparatus described in some embodiments above. The photoresist coating method has the technical advantages of the photoresist coating apparatus described above. In addition, the technical solutions related to the photoresist coating method can also be understood in combination with the related content of the photoresist coating apparatus described above, which will not be described in detail here.
[0093] Please refer to Figure 4 , the photoresist coating method comprises the following steps S100-S600.
[0094] S100, pretreating the substrate and the photoresist.
[0095] Illustratively, the pretreatment of the substrate and the photoresist includes: pre-wetting the substrate; and degassing the photoresist.
[0096] Illustratively, the dissolved oxygen in the photoresist after the degassing treatment is <0.1 ppm.
[0097] S200, coating the photoresist on the substrate and monitoring the photoresist coating layer in real time to obtain multi-dimensional data of the photoresist coating layer.
[0098] Illustratively, the photoresist can be coated on the substrate in a step-by-step spin coating manner. For example: first spin coating at a spin coating speed of 500 rpm for 10 s, then spin coating at a spin coating speed of 1500 rpm for 20 s, and then spin coating at a spin coating speed of 3000 rpm for 40 s, etc.
[0099] Illustratively, when coating the photoresist on the substrate, the initial flow rate of the photoresist corresponding to the edge region can be increased first, for example, the initial flow rate of the photoresist corresponding to the edge region is increased by 20%-50% relative to the flow rate of the photoresist corresponding to the center region, and then the coating is started. In one example, the initial flow rate of the photoresist corresponding to the edge region is increased by 40% and then the coating is started.
[0100] Illustratively, the photoresist coating layer is monitored in real time, including: performing a 49-point array scan every 5 seconds.
[0101] Illustratively, the multi-dimensional data of the photoresist coating layer is obtained, including the following steps S210-S230.
[0102] S210, obtaining initial data of the photoresist coating layer.
[0103] S220, performing validity check on the initial data.
[0104] S230, taking the valid data that passes the validity check as the multi-dimensional data.
[0105] Optionally, the validity check on the initial data can be performed by identifying abnormal data from the initial data and eliminating the abnormal data to obtain valid data, or by identifying abnormal data from the initial data and enabling historical cache data as valid data.
[0106] S300, determining whether the coating state of the photoresist coating layer meets the process target based on the multi-dimensional data.
[0107] S400, in response to the coating state of the photoresist coating layer not meeting the process target, determining a drop compensation coefficient of a target coating area according to the multi-dimensional data.
[0108] Optionally, the permissible range of the drop compensation coefficient includes but is not limited to 0.8-1.5.
[0109] Optionally, the determination of the drop compensation coefficient of the target coating area according to the multi-dimensional data can be performed by calculating an initial compensation coefficient according to the multi-dimensional data and determining whether the initial compensation coefficient is within the permissible range, if yes, outputting the initial compensation coefficient as the drop compensation coefficient, and if no, enabling a preset safety threshold as the drop compensation coefficient.
[0110] S500, generating a drop control parameter according to the drop compensation coefficient.
[0111] Here, the drop control parameter can be matched with the demand setting, including but not limited to the flow rate, pressure and viscosity of the photoresist fluid, etc.
[0112] S600, in response to the drop control parameter, dropping photoresist onto a target coating area on the substrate.
[0113] Optionally, the target coating area includes an edge area and / or a center area.
[0114] It can be understood that after determining in step S300 that the coating state of the photoresist coating layer meets the process target, in response to the coating state of the photoresist coating layer meeting the process target, the photoresist can continue to be coated until the photoresist coating process is completed.
[0115] In some embodiments of the present disclosure, the multi-dimensional data of the photoresist coating layer includes geometric size dimensional data and chemical state dimensional data. The geometric size dimensional data of the photoresist coating layer at least includes the thickness of the glue layer. The chemical state dimensional data of the photoresist coating layer at least includes the solvent concentration.
[0116] Correspondingly, step S300 of determining whether the coating state of the photoresist coating layer meets the process target based on the multi-dimensional data includes steps S310-S340.
[0117] S310, determining the thickness relative deviation of the photoresist coating layer according to the geometric size dimensional data.
[0118] S320, determining the solvent concentration gradient of the photoresist coating layer according to the chemical state dimension data.
[0119] S330, in response to the thickness relative deviation being less than or equal to the first target threshold and the solvent concentration gradient being less than or equal to the second target threshold, determining that the photoresist coating state of the photoresist coating layer meets the process target.
[0120] S340, in response to the thickness relative deviation being greater than the first target threshold and / or the solvent concentration gradient being greater than the second target threshold, determining that the photoresist coating state of the photoresist coating layer does not meet the process target.
[0121] Here, the first target threshold and the second target threshold can be matched with the demand selection setting, and the embodiments of the present disclosure do not make specific limitations thereon.
[0122] Optionally, the thickness relative deviation of the photoresist coating layer includes the difference between the first thickness of the photoresist coating layer in the edge region and the second thickness of the photoresist coating layer in the center region. Accordingly, the photoresist coating method further includes: in response to the difference between the first thickness and the second thickness being greater than 5 μm, increasing the glue dropping flow of the edge region by 5% to 10%.
[0123] Here, it can be understood that each time the difference between the first thickness and the second thickness is greater than 5 μm, the glue dropping flow of the edge region is automatically adjusted by 5% to 10% based on the original flow; that is, the glue dropping flow compensation of the edge region is automatically triggered when the thickness difference exceeds 5 μm.
[0124] It should be noted that after the photoresist coating method provided by the embodiments of the present disclosure is applied to the product production line and the photoresist coating is performed, by detecting the coating effect of the photoresist, it can be determined that even if the thick glue process is performed, the production efficiency can be ensured, and the thickness uniformity of the photoresist is ≤5% (for example, 1.8%), and the thickness difference between the edge region and the center region of the photoresist is ≤10 μm (for example, 3.7 μm).
[0125] The technical features of the above-described embodiments can be combined in any manner. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described, but it should be considered that any combination of the technical features is within the scope of the present disclosure.
[0126] The above-described embodiments only express several embodiments of the present disclosure, and the description is more specific and detailed, but it should not be understood as a limitation on the scope of the patent. It should be noted that for ordinary skilled persons in the art, without departing from the concept of the present disclosure, a number of modifications and improvements can be made, which are within the scope of the present disclosure. Therefore, the protection scope of the present patent should be subject to the appended claims.
Claims
1. A photoresist coating apparatus characterized by comprising: The application relates to a multi-spectrum target monitoring device configured to monitor a photoresist coating layer in real time and acquire multi-dimensional data of the photoresist coating layer. A control device is connected with the multi-spectrum target monitoring device and configured to determine whether a coating state of the photoresist coating layer meets a process target based on the multi-dimensional data, determine a drop compensation coefficient of a target coating area according to the multi-dimensional data, and generate a drop control parameter according to the drop compensation coefficient in response to the coating state of the photoresist coating layer not meeting the process target. A partitioned drop device is connected with the control device and configured to drop photoresist to the target coating area in response to the drop control parameter. The multi-dimensional data of the photoresist coating layer comprises geometric size dimensional data and chemical state dimensional data.
2. The photoresist coating apparatus according to claim 1, wherein The multi-spectrum target monitoring device comprises a dual-waveband infrared monitoring module configured to acquire the geometric size dimensional data based on first waveband spectrum monitoring and acquire the chemical state dimensional data based on second waveband spectrum monitoring, and the wavelength ranges of the first waveband and the second waveband are different. A data fusion module is connected with the dual-waveband infrared monitoring module and configured to generate a global three-dimensional glue state model of the photoresist coating layer in real time according to the geometric size dimensional data and the chemical state dimensional data. The control device is connected with the data fusion module and configured to determine the drop compensation coefficient of the target coating area based on the global three-dimensional glue state model. The dual-waveband infrared monitoring module comprises a detector array configured to scan and detect the photoresist coating layer according to a preset spiral path.
3. The photoresist coating apparatus according to claim 2, wherein The interval between adjacent detectors in the detector array is not greater than 15 mm. The scanning speed of the detector array is 10 mm / s to 100 mm / s. The sampling period of the data fusion module is less than or equal to 5 s. The target coating area comprises a central area and / or an edge area, the drop control parameter comprises a first drop control parameter for the central area and a second drop control parameter for the edge area, and the partitioned drop device comprises a partitioned micro-nozzle comprising a first micro-nozzle for the central area and a second micro-nozzle for the edge area.
4. The photoresist coating apparatus according to claim 2, wherein A glue conveying pipeline is connected with the first micro-nozzle and the second micro-nozzle respectively and configured to transmit first photoresist fluid to the first micro-nozzle in response to the first drop control parameter and transmit second photoresist fluid to the second micro-nozzle in response to the second drop control parameter.
5. The photoresist coating apparatus according to claim 1, wherein The partitioned drop device further comprises a pneumatic pressure controller arranged on the glue conveying pipeline and configured to apply first pressure to the first photoresist fluid in response to the first drop control parameter and apply second pressure to the second photoresist fluid in response to the second drop control parameter. The partitioned drop device further comprises a temperature control module arranged in the interior of the glue conveying pipeline and configured to regulate the temperature of the first photoresist fluid and the second photoresist fluid. The application further relates to a photoresist coating method comprising the following steps:
6. The photoresist coating apparatus according to claim 5, wherein preprocessing a substrate and photoresist; 7. The photoresist coating apparatus according to claim 5, wherein 8. A photoresist coating method characterized by, coating the photoresist on the substrate, and monitoring the photoresist coating layer in real time to obtain multi-dimensional data of the photoresist coating layer; determining whether the photoresist coating state meets a process target based on the multi-dimensional data; in response to the photoresist coating state not meeting the process target, determining a drop compensation coefficient of a target coating area according to the multi-dimensional data, and generating a drop control parameter according to the drop compensation coefficient; dropping photoresist onto the target coating area on the substrate in response to the drop control parameter.
9. The photoresist coating method according to claim 8, wherein The multi-dimensional data of the photoresist coating layer includes geometric size dimensional data and chemical state dimensional data; determining whether the photoresist coating state meets a process target based on the multi-dimensional data includes: determining a thickness relative deviation of the photoresist coating layer according to the geometric size dimensional data; determining a solvent concentration gradient of the photoresist coating layer according to the chemical state dimensional data; in response to the thickness relative deviation being less than or equal to a first target threshold and the solvent concentration gradient being less than or equal to a second target threshold, determining that the photoresist coating state meets the process target; in response to the thickness relative deviation being greater than the first target threshold and / or the solvent concentration gradient being greater than the second target threshold, determining that the photoresist coating state does not meet the process target.
10. The photoresist coating method according to claim 9, wherein The thickness relative deviation of the photoresist coating layer includes a difference between a first thickness of the photoresist coating layer at an edge area and a second thickness of the photoresist coating layer at a center area; The photoresist coating method further includes: in response to the difference between the first thickness and the second thickness being greater than 5 μm, increasing the drop flow of the edge area by 5% to 10%.