A low-noise amplifier with embedded semiconductor refrigeration

Abstract

The application discloses a kind of embedded semiconductor refrigeration low-noise amplifiers, comprising: shell, circuit board, semiconductor refrigerator and heat sink;Shell includes base and cover;Circuit board is set on base, and circuit board carries and includes the amplification circuit of first stage amplification transistor;Base is provided with accommodating groove;Semiconductor refrigerator is accommodated in accommodating groove, and its hot face is connected with base heat conduction;Heat sink is connected with the cold face of semiconductor refrigerator heat conduction;Heat sink has heat conduction part, and the heat conduction part passes through the opening on circuit board and is connected with first stage amplification transistor heat conduction, to realize the directional refrigeration of transistor.The application only refrigerates the first stage transistor of low-noise amplifier, and the required cold quantity is small, and it can be realized using semiconductor refrigerator, with the characteristics of simple structure, small size, low refrigeration cost, maintenance-free.Using the structure and refrigeration method of the application, the temperature of the first stage transistor can be reduced from room temperature to-40 DEG C.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of radio telescope receiver, and in particular to a low-noise amplifier embedded with a semiconductor refrigeration device. BACKGROUND

[0002] Sensitivity is one of the important indicators of a radio telescope, and high sensitivity means that the telescope can detect more distant and fainter celestial signals. Sensitivity is directly related to the system noise of the telescope, and the lower the system noise, the higher the sensitivity. A low-noise amplifier is a core device of a radio telescope receiver, and its role is to amplify the weak astronomical signals received by the feed at the front end of the receiver. Since it has the characteristic of low noise, it will not introduce too much noise to the system. At the same time, according to the cascading formula of system noise, the low-noise amplifier can reduce the contribution of the noise of other components of the receiver located behind it to the system noise.

[0003] ;

[0004] For the equivalent system noise temperature, 、 and are the equivalent noise temperatures of the first, second, and third components, respectively, and are the gains of the first and second components, respectively. The first equivalent noise directly contributes to the system noise, the second equivalent noise contributes to the system noise after being divided by the first-stage amplification, and the third equivalent noise is counted into the system noise after being divided by the sum of the first-stage and second-stage amplification. Similarly, the contribution of the following stages to the system noise can be calculated. It can be seen that the noise of the first stage contributes most to the system noise, and when the first stage has a large enough amplification, the noise contribution of the following stages can be ignored. The low-noise amplifier is in the first stage in the radio astronomy receiver, so it is a key device for reducing system noise and improving telescope sensitivity.

[0005] There are two types of low-noise amplifiers in radio astronomy: normal-temperature low-noise amplifiers and cryogenic low-noise amplifiers. Normal-temperature low-noise amplifiers, i.e., operating at ambient temperature, such as room temperature 25℃. The current common commercial L-band normal-temperature low-noise amplifier has a noise temperature of about 30-40 K (noise figure 0.4-0.6 dB). In recent years, a new type of normal-temperature low-noise amplifier uses ultra-low-noise InP HEMT transistors and can achieve a noise temperature of less than 10 K (noise figure about 0.15 dB) at normal temperature through circuit structure topology and optimization design.

[0006] Another refrigeration low noise amplifier, the low noise amplifier is refrigerated to 15 K (i.e.-258.15 ℃), to reduce the transistor itself noise and the loss of matching circuit, to obtain extremely low noise. Taking L band as an example, the refrigeration low noise amplifier works at 15 K, and the extremely low noise level of 5 K can be obtained. But the refrigeration system is complex, the feed and low noise amplifier of the front end of the receiver are put into the dewar, the vacuum degree is kept in the dewar, the vacuum window not only has wave permeability and low loss, but also has certain strength to withstand several times atmospheric pressure. The refrigeration system needs to be equipped with a refrigerator and a compressor, the complexity and cost of the receiver are greatly improved, and regular maintenance is also needed, and the operation and maintenance cost is also increased. SUMMARY

[0007] In view of the problems existing in the prior art, the purpose of the present application is to provide an embedded semiconductor refrigeration low noise amplifier, so as to realize the engineering application of refrigerating the low noise amplifier to-40℃ by using the semiconductor refrigerator TEC (Thermo-Electric Cooler).

[0008] In order to achieve the above-mentioned purpose, the embedded semiconductor refrigeration low noise amplifier of the present application comprises: a shell 1, a circuit board 2, a semiconductor refrigerator 3 and a heat sink 4.

[0009] The shell 1 comprises a base 5 and a cover 14.

[0010] The circuit board 2 is arranged on the base 5, and the circuit board 2 carries an amplification circuit comprising a first-stage amplification transistor.

[0011] The base 5 is provided with a containing groove 6.

[0012] The semiconductor refrigerator 3 is contained in the containing groove 6, and the hot surface of the semiconductor refrigerator 3 is in thermal conductive connection with the base 5.

[0013] The heat sink 4 is in thermal conductive connection with the cold surface of the semiconductor refrigerator 3.

[0014] The heat sink 4 has a heat conduction part 7 which passes through an opening 16 on the circuit board 2 and is in thermal conductive connection with the first-stage amplification transistor, so as to realize directional refrigeration of the first-stage amplification transistor.

[0015] Further, a digital temperature control module is further included.

[0016] A temperature sensor is arranged on the heat sink 4.

[0017] The digital temperature control module is electrically connected with the temperature sensor and the semiconductor refrigerator 3, and is used for carrying out closed loop control on the semiconductor refrigerator 3 according to the detection signal of the temperature sensor.

[0018] Furthermore, the digital temperature control module is configured to stably control the temperature of the heat sink 4 within the range of -40℃ ± 0.01℃.

[0019] Furthermore, the heat sink 4 is bonded and fixed to the cold surface of the semiconductor cooler 3, and the hot surface of the semiconductor cooler 3 is bonded and fixed to the bottom surface of the receiving groove 6 by thermally conductive adhesive.

[0020] Furthermore, the heat sink 4 is provided with a mounting slot 9 for housing a temperature sensor.

[0021] Furthermore, a feedthrough capacitor is installed on the housing 1, and the power line of the semiconductor cooler 3 and / or the lead of the temperature sensor are led out to the outside of the housing 1 via the feedthrough capacitor.

[0022] Furthermore, the first-stage amplification transistor is an InP HEMT transistor.

[0023] Furthermore, the interior of the outer shell 1 is a sealed cavity filled with dry air or inert gas.

[0024] Furthermore, the first-stage amplifying transistor is electrically connected to the circuit board lines using gold wire bonding wires with a length of 0.6 mm.

[0025] Furthermore, the cover 14 and the base 5 are sealed together by a sealant.

[0026] This invention only cools the first-stage transistor of a low-noise amplifier, requiring minimal cooling capacity. It can be achieved using a semiconductor cooler, and features a simple structure, small size, low cooling cost, and maintenance-free operation. Using the structure and cooling method of this invention, the temperature of the first-stage transistor can be reduced from room temperature to -40°C and stabilized at -40°C ± 0.01°C. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of the overall structure of the low-noise amplifier with embedded semiconductor cooling according to the present invention;

[0028] Figure 2 A schematic diagram of the mounting structure of the base, semiconductor cooler, and heat sink;

[0029] Figure 3 This is a schematic diagram of the heat sink structure;

[0030] Figure 4 In order to be in Figure 2 A schematic diagram of the structure after the circuit board is installed on the basic structure. Detailed Implementation

[0031] The technical solutions of the present application will be described clearly and completely in the following description of the drawings. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0032] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", "third" are only for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0033] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connection" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0034] The specific embodiments of the present application will be described in detail below. Figures 1-4 The specific embodiments of the present application will be described in detail below.

[0035] As shown in the drawings, the low-noise amplifier of the present application embedded with semiconductor refrigeration comprises: a shell 1, a circuit board 2, a semiconductor refrigerator 3, a heat sink 4, a temperature sensor and a digital temperature control module. Figures 1-4 The shell 1 comprises a base 5 and a cover 14 sealingly matched with the base 5.

[0036] The circuit board 2 is fixedly arranged on the base 5, and the low-noise amplification circuit is arranged on the circuit board 2, which at least comprises a first-stage transistor.

[0037] The base 5 is provided with a containing groove 6 for accommodating the refrigeration assembly, and the containing groove 6 is located directly below the first-stage transistor on the circuit board.

[0038] The semiconductor refrigerator 3 is arranged in the containing groove 6, and the hot surface thereof is in heat-conducting connection with the bottom surface of the containing groove 6.

[0039] The semiconductor refrigerator 3 is arranged in the containing groove 6, and the hot surface thereof is in heat-conducting connection with the bottom surface of the containing groove 6.

[0040] The heat sink 4 is disposed on the cold surface of the semiconductor cooler 3 and is thermally connected to the cold surface;

[0041] The heat sink 4 is provided with an upwardly protruding heat-conducting part 7, which serves as a first-stage transistor connection part. The circuit board 2 has a corresponding opening 16, through which the heat-conducting part 7 passes and is flush with or slightly higher than the upper surface of the circuit board.

[0042] The first-stage transistor is mounted on the upper surface of the heat-conducting part 7 and is thermally connected to the heat-conducting part 7. The transistor is electrically connected to the circuit on the circuit board by gold wire.

[0043] A temperature sensor is installed on heat sink 4 to detect the temperature of the heat sink; a PT1000 platinum resistance thermometer is selected.

[0044] The digital temperature control module is electrically connected to the temperature sensor and the thermoelectric cooler 3. It drives the thermoelectric cooler and, based on the feedback signal from the temperature sensor and PID parameters, calculates and adjusts the power of the thermoelectric cooler. This module features fast temperature control, low overshoot, and minimal oscillation. The digital temperature control module used in this invention is model TCM-M115.

[0045] This invention proposes a method for cooling low-noise amplifiers using a semiconductor cooler (TEC) based on room-temperature low-noise amplifiers. This method features simple structure, small size, low cooling cost, and maintenance-free operation. For example, a low-noise amplifier using InP HEMT transistors can achieve a noise temperature of less than 10 K. If semiconductor cooling is applied to -40°C, the noise temperature will be further reduced to 5 K, achieving the same noise level as a cryogenically cooled low-noise amplifier.

[0046] A thermoelectric cooler (TEC) is a solid-state device that utilizes the Peltier effect to achieve cooling and heating. When a direct current passes through a thermocouple pair consisting of N-type and P-type semiconductors connected in series, charge carriers exchange energy at the junction. One end absorbs heat, becoming the "cold side," while the other end releases heat, becoming the "hot side." The heat is transferred from the cold side to the hot side and then dissipated by heat sinks and other heat dissipation devices, resulting in continuous cooling.

[0047] If the low-noise amplifier is to be cooled as a whole, the entire housing acts as a heat load, requiring a large cooling capacity and placing high demands on the heat dissipation of the thermoelectric cooler. Despite a series of measures, it is still not possible to effectively remove the heat, preventing the temperature of the hot surface of the thermoelectric cooler from being further reduced. Previous experiments only achieved a temperature reduction from room temperature (27°C) to -22°C, with a power dissipation of 119 W, essentially reaching the upper limit of the operating voltage and current of the thermoelectric cooler chip. Cooling the temperature to -40°C is difficult and consumes a large amount of power, which is not conducive to practical applications.

[0048] The application adopts the technology of embedding a semiconductor refrigerator into a low-noise amplifier, only the first-stage InP HEMT transistor is refrigerated, so the heat load is much smaller, and it is more conducive to achieving a refrigeration temperature of-40 DEG C. However, how to design the embedded structure, how to perform heat management, reduce heat conduction, heat convection and heat radiation, and how to isolate the low-noise amplifier shell from water vapor to avoid frosting and condensation are all technical difficulties to be solved. The application estimates and analyzes the heat load between the first-stage transistor, gold wire bonding lead, heat sink, and the low-noise amplifier shell and the cold surface of the semiconductor refrigerator based on the design of the structure and heat sink of the embedded semiconductor refrigeration low-noise amplifier, optimizes the embedded structure of the semiconductor refrigerator based on the calculation results, and performs experiments and reliability tests, and finally achieves a working temperature of-40 DEG C.

[0049] The first-stage transistor has a size of only about 0.3*0.4*0.1 mm, and the gold wire needs to be used to electrically connect the first-stage transistor to the circuit board line, and the length of the gold wire is only 0.6 mm. The length of the gold wire has a great influence on the performance of the low-noise amplifier, and the length of the gold wire cannot be increased at will, so the structure size of the circuit board opening and the connection of the first-stage transistor and the semiconductor refrigerator is very limited, which is also a problem to be solved by the application.

[0050] The application embeds the semiconductor refrigerator 3 into the low-noise amplifier to refrigerate the first-stage transistor of the low-noise amplifier. The semiconductor refrigerator 3 and the first-stage transistor are connected through the heat sink 4. The embedded semiconductor refrigeration low-noise amplifier of the application comprises the shell 1 (the base 5 and the cover 14, as shown in Figure 1 The circuit board 2 is welded on the base 5, and in order to clearly see the structure of the base 5 and the semiconductor refrigerator 3 and the heat sink 4 installed thereon, the cover 14 and the circuit board 2 are removed, as shown in Figure 2 There are two grooves on the base 5, the installation groove 15 is a component part of the suspended microstrip line of the amplifier input matching circuit, and the accommodation groove 6 is a specific structure design of the application, which is used to place the related components of the semiconductor refrigeration, including the semiconductor refrigerator 3 and the heat sink 4, and the accommodation groove 6 is located directly below the first-stage transistor on the circuit board 2.

[0051] The thermoelectric cooler 3 uses the TEC model TEMT-090064387-01M, with dimensions of 9 mm (length), 6.4 mm (width), and 3.87 mm (height). It has a three-layer structure, a maximum temperature difference ΔTmax of 112℃ (when the heat transfer between the hot and cold surfaces is 0 W and the hot surface temperature is 50℃), a maximum current Imax of 0.88 A, a maximum voltage Vmax of 11.4 V, and a maximum cooling capacity Qcmax of 2.35 W at the maximum temperature difference. The upper and lower surfaces of the TEC are the cold and hot surfaces of the thermoelectric cooler 3, respectively. The thermoelectric cooler 3 is placed in the receiving groove 6 of the base 5. The hot surface is bonded to the base 5 with conductive silver paste, and the heat sink 4 is placed on the cold surface, bonded to the lower surface of the heat sink 4 with conductive silver paste. The receiving groove 6 is convex ("U") shaped, with the narrowest part measuring 9.2 mm in length, mainly determined by the width of the TEC (9 mm), plus 0.1 mm on each side, isolating it from the base. The wide portion of the accommodating slot is 19 mm long, primarily for accommodating four M3 feedthrough capacitors. The slot depth is 6.87 mm, determined by the TEC height of 3.87 mm and the heat sink height of 2 mm. A 1 mm gap is left between the upper surface of the heat sink and the circuit board for insulation. The total width of the accommodating slot is 20.2 mm.

[0052] Heat sink 4 structure as Figure 3 As shown, the heat-conducting part 7 of the heat sink 4 passes through the opening 16 on the circuit board 2 and is flush with the circuit board 2. The upper surface of the heat-conducting part 7 is connected to the transistor. The heat-conducting part 7 is designed as a small pillar structure.

[0053] A temperature sensor is placed in the mounting slot 9 of the heat sink 4 and secured with thermally conductive silicone grease. The two wires of the temperature sensor are connected to the second feedthrough capacitor 11 and the third feedthrough capacitor 12, respectively. The second feedthrough capacitor 11 and the third feedthrough capacitor 12 are connected to the sensor input terminals of the external digital temperature control module. The two power supply lines of the semiconductor cooler 3 are connected to the first feedthrough capacitor 10 and the fourth feedthrough capacitor 13, respectively. The first feedthrough capacitor 10 and the fourth feedthrough capacitor 13 are connected to the positive and negative terminals of the drive output power supply on the digital temperature control module.

[0054] TEC heat load analysis:

[0055] Heat conduction analysis:

[0056] Calculate using the heat conduction formula:

[0057] ;

[0058] Thermal conductivity, For cross-sectional area, The temperature of the hot surface. For cold surface temperature, Distance between hot and cold surfaces.

[0059] 1) 4 gold wire bond lines from transistor to circuit board traces heat conduction calculation: gold wire diameter is 0.000025 m, cross-sectional area 4.91 x 10 -10 ㎡, hot face temperature 40℃, cold face temperature -40℃, gold wire length 0.0006 m, gold thermal conductivity 317 W / (m·K), the calculated heat conduction of 4 gold wire bond lines about 0.083 W.

[0060] 2) Temperature sensor 2 lead wire heat conduction calculation: copper wire, diameter is 0.0001 m, cross-sectional area 7.85 x 10 -9 ㎡, hot face temperature 40℃, cold face temperature -40℃, copper wire length 0.03 m, copper thermal conductivity 401 W / (m·K), the calculated heat conduction of 2 copper wires about 0.0168 W.

[0061] 3) The amplifier housing is filled with 1 atm nitrogen, and the heat conduction of nitrogen is analyzed. The distance between the upper surface of the heat sink and the circuit board, the back surface of the heat sink and the back wall of the base housing slot, and the right surface of the heat sink and the right wall of the base housing slot are all 1 mm. The thermal conductivity of nitrogen 0.0242 W / (m·K) is taken as the approximate value under the standard conditions of 0℃ and 1 atm, 1 mm, the heat conduction of the three surfaces of the heat sink is calculated to be about 0.1224 W. The left surface of the heat sink is 28.3 mm away from the left wall inside the base, and the front surface is 14.3 mm away from the front wall inside the base. Since the distance is large, the heat conduction of nitrogen is very small, and the calculation is 0.0007 W and 0.0022 W, respectively. The total heat conduction of nitrogen : 0.1253 W.

[0062] Heat convection analysis:

[0063] As mentioned earlier, the gap between the upper surface of the heat sink and the circuit board is only 1 mm, and the gap between the back surface and the right surface of the heat sink and the side wall of the housing slot is also only 1 mm, so natural convection is suppressed and it is basically pure conduction. The left surface and the front surface of the heat sink are far away from the inner wall of the base wall, which may form natural convection. The flow state is judged by calculating the Rayleigh number.

[0064] 1 atm nitrogen at film temperature 0°C typical property parameters:

[0065] Kinematic viscosity ;

[0066] Thermal conductivity: ;

[0067] Prandtl number: = 0.703;

[0068] Volumetric expansion coefficient: = 1 / 273 K⁻¹.

[0069] Characteristic length and Grashof number:

[0070] Characteristic dimension is the height of the left and front surface of the heat sink: ;

[0071] Grashof number is calculated from the following formula:

[0072] ;

[0073] wherein is the gravitational acceleration, which has a value of 9.8 m / s 2 . The natural convection between these two surfaces and the hot surface of the shell was calculated to be .

[0074] Rayleigh number:

[0075] ;

[0076] The calculated = 91.7 < 10 3 , the convection is extremely weak and can be neglected, and the heat transfer mode is essentially pure conduction.

[0077] Radiation heat transfer analysis:

[0078] The heat sink is very small relative to the aluminum shell and is completely enclosed in the cavity of the shell, so the simplified gray body network formula can be used for calculation:

[0079] ;

[0080] wherein , and are the emissivities of the cold and hot surfaces, respectively. The material of the heat sink is red copper, which has good electrical conductivity and thermal conductivity, excellent plasticity, and is easy to process, 0.7 is taken, and the hot surface is a gold-plated circuit board and a polished aluminum shell. Take 0.05. The cold surface temperature, hot surface temperature is -40℃ and 40℃ respectively. The area of the cold surface about 0.00000968㎡, the area of the hot surface about 0.00174㎡. The radiation heat transfer heat is calculated by using the above formula about 0.0147 W.

[0081] Thermal load of the transistor:

[0082] The transistor operating voltage is 0.5 V, the current is 0.03 A, and the power consumption is 0.015 W;

[0083] The thermal load of the semiconductor refrigerator is shown in the following table, and the total is 0.2548 W.

[0084] Table 1: Analysis and estimation of the thermal load of the semiconductor refrigerator:

[0085] .

[0086] The low-noise amplifier of the embedded semiconductor refrigeration of the application has the following assembly process:

[0087] 1. All components except the first stage transistor are attached to the circuit board 2.

[0088] 2. Apply conductive silver glue to the accommodation groove 6 of the base 5 to bond the hot surface of the semiconductor refrigerator 3 to the bottom of the accommodation groove 6.

[0089] 3. Apply heat-conducting silicone grease to the mounting groove 9 on the heat sink 4, install the temperature sensor, and solidify.

[0090] 4. Apply conductive silver glue to the lower surface of the heat sink 4, and place the heat sink 4 on the cold surface of the semiconductor refrigerator 3.

[0091] 5. Fine-tune the position of the heat sink 4 so that the heat-conducting part 7 of the heat sink 4 passes through the opening 16 of the circuit board and the heat-conducting part 7 is in the center of the opening. Heat to solidify the conductive silver glue.

[0092] 6. Weld the two leads of the temperature sensor and the two power supply lines of the semiconductor refrigerator 3 together with the inner ends of the four through-hole capacitors.

[0093] 7. Place the indium sheet on the upper surface of the base 5, place the circuit board 2, heat the indium sheet to melt, and weld the circuit board 2 and the base 5 together.

[0094] 8. Weld the amplifier connector, clean the circuit board 2.

[0095] 9. Apply conductive silver glue to the heat-conducting part 7 of the heat sink 4, attach the transistor, and heat to solidify. Gold wire bonding is performed on the transistor and the circuit board 2 to achieve electrical connection.

[0096] 10. A low noise amplifier electrical performance test package;

[0097] 11. The housing is sealed, and the assembly of the low noise amplifier embedded with the semiconductor refrigerator 3 is completed.

[0098] Test results: thermometer shows-40℃, ambient temperature 22℃, the first transistor is cooled to-40℃ by the embedded semiconductor refrigerator, at this time the actual output voltage of TEC is 8.6 V, the current is 0.86 A, and the maximum working current is basically reached.

[0099] The innovation points of the application include:

[0100] 1. The semiconductor refrigerator 3 is embedded in the low noise amplifier, and the first transistor of the low noise amplifier is cooled to-40℃. The accommodating groove 6 on the base 5 is located directly below the first transistor on the circuit board 2, the hot surface of the semiconductor refrigerator 3 is connected with the bottom surface of the accommodating groove 6, the cold surface of the semiconductor refrigerator 3 is connected with the lower surface of the heat sink 4, the heat conduction part 7 of the heat sink 4 passes through the hole 16 on the circuit board 2 and is flush with the upper surface of the circuit board 2, and the upper surface of the heat conduction part 7 is connected with the transistor.

[0101] 2. The structure design of the heat sink 4: the mounting groove 9 on the heat sink 4 is used for placing a temperature sensor, the temperature sensor is wrapped by heat-conducting silicone grease, which not only plays a fixing role but also increases heat transfer, so that the sensor and the heat sink 4 reach thermal equilibrium. Accurately knowing the temperature of the heat sink 4 is the key to temperature control of the semiconductor refrigerator 3. The heat conduction part 7 of the heat sink 4 is used for connecting the transistor.

[0102] The application only cools the first transistor of the low noise amplifier, and the required cooling capacity is small, which can be realized by using the semiconductor refrigerator 3, and has the characteristics of simple structure, small size, low refrigeration cost and maintenance-free. By using the structure and refrigeration method of the application, the temperature of the first transistor can be effectively reduced from room temperature to-40℃.

[0103] Any process or method descriptions in flow charts or otherwise described herein can be understood as representing code modules, segments, or portions of code that include one or more executable instructions for implementing specific logic functions or other processes. The machine-readable media can include a storage medium or other storage(s) such as a computer-readable medium, a read-only memory, a disk, an optical disk, or a magnetic disk or other storage devices that store data for execution by a processing unit or other devices that store and transmit programming code.

[0104] In the description of the specification, the description of the terms "embodiment", "example", and the like means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative expressions of the above terms are not necessarily directed to the same embodiment or example. In addition, those skilled in the art can combine or combine the different embodiments or features described in the specification without causing contradiction.

[0105] The above is only the preferred embodiment of the present application, not any form of limitation on the present application. Although the present application has been disclosed as above with the preferred embodiment, it is not intended to limit the present application. Therefore, any simple modification, equivalent change and modification made to the above embodiment without departing from the technical solution of the present application, according to the technical essence of the present application, should fall within the scope of protection of the technical solution of the present application.

Claims

1. A low-noise amplifier with embedded semiconductor cooling, characterized in that, Comprising: A housing, a circuit board, a semiconductor refrigerator, and a heat sink; The housing includes a base and a cover; The circuit board is disposed on the base, and the circuit board carries an amplification circuit including a first-stage amplification transistor; The base is provided with a receiving groove; The semiconductor refrigerator is received in the receiving groove, and its hot surface is thermally connected to the base; The heat sink is thermally connected to the cold surface of the semiconductor refrigerator; The heat sink has a heat conducting portion, which passes through an opening on the circuit board and is thermally connected to the first-stage amplification transistor to achieve directional refrigeration of the first-stage amplification transistor; Wherein, the receiving groove is in a "convex" shape, the receiving groove includes a narrow part and a wide part, the semiconductor refrigerator is received in the narrow part, and the width of the narrow part matches the width of the semiconductor refrigerator; the wide part is used for arranging a plurality of feedthrough capacitors mounted on the housing.

2. The low-noise amplifier with embedded semiconductor cooling according to claim 1, characterized in that, It further includes a digital temperature control module; A temperature sensor is provided on the heat sink; The digital temperature control module is electrically connected to the temperature sensor and the semiconductor refrigerator, and is used for performing closed-loop control on the semiconductor refrigerator according to the detection signal of the temperature sensor.

3. The low-noise amplifier with embedded semiconductor cooling according to claim 2, characterized in that, The digital temperature control module is configured to stably control the temperature of the heat sink at -40°C ± 0.01°C.

4. The low-noise amplifier with embedded semiconductor cooling according to claim 1, characterized in that, Between the heat sink and the cold surface of the semiconductor refrigerator, and between the hot surface of the semiconductor refrigerator and the bottom surface of the receiving groove, they are bonded and fixed by a thermal conductive adhesive.

5. The low-noise amplifier with embedded semiconductor cooling according to claim 1, characterized in that, The heat sink is provided with a mounting groove for receiving the temperature sensor.

6. The low-noise amplifier with embedded semiconductor cooling according to claim 2, characterized in that, Feedthrough capacitors are mounted on the housing, and the power supply line of the semiconductor refrigerator and / or the lead wire of the temperature sensor are led out to the outside of the housing through the feedthrough capacitors.

7. The low-noise amplifier with embedded semiconductor cooling according to claim 1, characterized in that, The first-stage amplification transistor is an InP HEMT transistor.

8. The low-noise amplifier with embedded semiconductor cooling according to claim 1, characterized in that, The interior of the housing is a sealed cavity, and it is filled with dry air or inert gas.

9. The low-noise amplifier with embedded semiconductor cooling according to claim 1, characterized in that, The electrical performance connection between the first-stage amplification transistor and the circuit board line is made by a gold wire bonding wire, and the length of the gold wire is 0.6 mm.

10. The low-noise amplifier with embedded semiconductor cooling according to claim 1, characterized in that, The cover and the base are hermetically connected by a sealant.

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