Vacuum equipment for processing quartz semiconductor component

Abstract

The invention discloses vacuum equipment for processing a quartz semiconductor component, and relates to the technical field of semiconductor processing and manufacturing, the vacuum equipment comprises a vacuum adsorption table which comprises an air exhaust shell, a substrate fixedly connected to a top port of the air exhaust shell, and a table plate fixedly connected to the top of the substrate; the gas path assembly comprises a plurality of circles of first through holes formed in the platen and a plurality of circles of second through holes formed in the base plate and corresponding to the positions of the first through holes, the circle diameters of the first through holes are sequentially increased, and the first through hole and the second through hole located in the innermost circle are a fixed gas path and a butt joint gas path respectively. According to the scheme, the problems that in existing multi-size quartz semiconductor wafer machining, an adsorption table needs to be manually replaced, time consumption is long, and deviation is prone to occurring are solved, through cooperation of a grading spring of the control assembly, an electromagnet with adjustable magnetic attraction force, the fixed adsorption table and the variable air channel, wafers of various sizes can be adapted without replacing a vacuum adsorption table, the applicability of equipment is improved, and the production efficiency is improved. And cutting deviation is avoided.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing and manufacturing technology, and more specifically, to a vacuum device for processing quartz semiconductor components. Background Technology

[0002] Quartz semiconductor components are one of the core basic materials in the semiconductor industry. For example, quartz semiconductor wafers are widely used in the manufacturing of high-precision semiconductor devices such as integrated circuits, power devices, and sensors. They are the key carriers that ensure the performance stability and reliability of semiconductor devices. In the entire process of quartz semiconductor wafer processing, the dicing process is the core link connecting wafer preparation and device packaging. Large-size wafers (such as 8-inch and 12-inch wafers) need to be precisely diced into small-size wafers (such as 1mm×1mm and 2mm×2mm) that meet device specifications. Because quartz semiconductor wafers are brittle and hard, and the surface flatness requirements are extremely high, and micro-cracks, chipping, or surface contamination must be avoided during the dicing process, stringent requirements are placed on the support and positioning during dicing. The wafers need to be tightly fixed by stable adsorption force, while ensuring that the adsorption force is evenly distributed to avoid excessive local stress that could damage the wafers. This makes vacuum adsorption equipment an indispensable key piece of equipment in the quartz semiconductor wafer dicing process.

[0003] Currently, existing vacuum equipment for quartz semiconductor wafer dicing has shortcomings in practical applications, hindering the efficiency and yield of semiconductor processing. Specifically, the core component of most existing vacuum equipment—the vacuum adsorption stage—is designed with a fixed size. For quartz semiconductor wafers of different specifications, the corresponding size adsorption stage must be manually replaced to meet dicing requirements, thus necessitating frequent shutdowns and disrupting continuous production processes. During replacement, not only must the old adsorption stage be disassembled and the new one installed, but the flatness and positioning accuracy of the adsorption stage must also be recalibrated. Frequent calibration introduces calibration error risks, as some calibrations are performed manually with tools, and frequent manual calibration introduces errors. Furthermore, flatness calibration is required when replacing the adsorption stage. Inaccurate flatness can lead to problems such as inaccurate focusing in subsequent laser and optical processing, uneven stress in mechanical cutting, and inconsistent dimensions. It also results in extremely low conversion efficiency between processing wafers of different sizes, making it difficult to adapt to the flexible production needs of the semiconductor industry, which requires multiple varieties and small batches.

[0004] To address the aforementioned issues, a vacuum device for processing quartz semiconductor components is proposed. Summary of the Invention

[0005] To solve the above-mentioned technical problems, a vacuum device for processing quartz semiconductor components is provided. This technical solution solves the problems mentioned in the background art.

[0006] To achieve the above objectives, the present invention can be implemented using the following technical solutions: This invention provides a vacuum apparatus for processing quartz semiconductor components, comprising: A vacuum adsorption stage includes a vacuum shell, a substrate fixedly connected to the top port of the vacuum shell, and a stage plate fixedly connected to the top of the substrate. The air passage assembly includes multiple through holes with progressively increasing diameters on the platform and multiple through holes on the substrate corresponding to the positions of each through hole one. The innermost through holes one and through holes two are respectively a fixed air passage and a docking air passage one, and the remaining through holes one and through holes two are respectively a variable air passage and a docking air passage two. The top port of each docking air passage two is flared. The control assembly includes multiple iron rings with progressively increasing inner diameters, corresponding to each of the two docking air passages below; uprights movably disposed within each of the two docking air passages; sealing cones fixedly connected to the top of each upright; electromagnets fixedly connected to both sides inside the suction shell; and multiple coils of springs uniformly fixedly connected to the bottom of each iron ring along the circumferential direction. The bottom end of each upright is fixedly connected to the iron ring directly below it, and the bottom end of each spring is fixedly connected to the suction shell. The elastic coefficient of each coil of spring decreases progressively as the inner diameter of the top iron ring increases. The electromagnets are located below the iron rings and are spaced apart from them.

[0007] Furthermore, the diameter of the upright is smaller than the inner diameter of the connecting air passage two.

[0008] Furthermore, the gas path assembly also includes a sealing ring for sealing the connection between the fixed gas passage and the docking gas passage, the sealing ring being embedded in the top port of the docking gas passage.

[0009] Furthermore, the gas path assembly also includes a second sealing ring for sealing the junction of the variable gas path and the second docking gas path, the second sealing ring being embedded in the top port of the second docking gas path.

[0010] Furthermore, the control component also includes a plurality of guide rods uniformly fixedly connected to each iron ring, and each guide rod is slidably connected inside the substrate.

[0011] Furthermore, it also includes a vacuum assembly, which includes a three-way valve fixedly connected to the inner cavity of the vacuum housing, a buffer gas tank and a backflush gas tank fixedly connected to the remaining two valve ports of the three-way valve respectively, and a vacuum pump whose inlet is fixedly connected to the outlet of the buffer gas tank. The outlet of the vacuum pump is fixedly connected to the inlet of the backflush gas tank. The three-way valve, buffer gas tank, backflush gas tank and vacuum pump are all fixedly installed inside the equipment cabinet.

[0012] Furthermore, the vacuum assembly also includes an air filter connected in series in the pipeline between the three-way valve port and the air inlet of the buffer tank.

[0013] Furthermore, the vacuum assembly also includes an air filter II connected in series in the pipeline between the three-way valve port and the backflush gas tank outlet.

[0014] As described above, the beneficial effects of the vacuum equipment for processing quartz semiconductor components in this invention are: In existing technologies, the processing of quartz semiconductor wafers of different sizes requires manual disassembly and installation of the adsorption stage, necessitating recalibration of flatness and positioning accuracy. This leads to frequent downtime, disrupting continuous production, and is time-consuming. Frequent calibration introduces calibration error risks (as some calibrations are performed manually with tools, frequent manual calibration introduces errors). Furthermore, errors in flatness calibration during adsorption stage replacement can cause focusing inaccuracies in subsequent laser and optical processing, and uneven stress and inconsistent dimensions in mechanical cutting. This solution addresses these issues through a collaborative design of the control component and the vacuum adsorption stage: In the control component, the elastic coefficient of each spring decreases sequentially with the increase of the inner diameter of the iron ring (softer outer ring, harder inner ring). This works in conjunction with an electromagnet whose magnetic attraction force can be adjusted by current. When a small current is applied, the magnetic attraction first overcomes the outer soft spring force, closing the outer variable air passage; as the current increases, it overcomes the inner hard spring force, closing the inner variable air passage. This allows for adaptation to wafers of different sizes without replacing the adsorption stage, improving equipment applicability and avoiding wafer cutting deviations caused by positioning reference offsets.

[0015] In existing technologies, the gas path and adsorption stage are integrated, requiring simultaneous replacement of gas path components such as the gas duct plate and seals when changing the adsorption stage. This necessitates re-testing for airtightness, and repeated disassembly and reassembly can lead to seal wear, negative pressure leakage, and insufficient wafer adsorption force. Consequently, this results in unstable positioning and misalignment during quartz wafer dicing, causing dimensional discrepancies, edge chipping, and in severe cases, wafer scrapping. This solution addresses these issues through a gas path assembly: The fixed gas path and the first docking gas path form a core negative pressure channel, adaptable to the centering of wafers of all sizes; the multi-turn variable gas path adjusts with the control component, eliminating the need to replace the gas path structure; sealing rings one and two are embedded in the top ports of the first and second docking gas paths, respectively, tightly fitting the stage plate and substrate to maintain long-term sealing performance. This design eliminates the need for gas path assembly replacement, reducing spare parts costs, while effectively controlling negative pressure leakage, ensuring uniform adsorption force during quartz wafer dicing, and preventing dicing misalignment due to leakage.

[0016] To address the problems in existing technologies where the vacuum pump is directly connected to the adsorption stage, the lack of a negative pressure buffer structure leads to large fluctuations in negative pressure during pumping, easily causing minute wafer displacement. Furthermore, quartz debris generated during dicing can easily clog narrow air passages, requiring machine shutdown and disassembly for cleaning, and may even scratch the wafer surface, affecting processing yield. This solution addresses these issues through a pressure stabilization and online unblocking design in the vacuum components: the buffer tank stores negative pressure, smoothing pressure fluctuations during vacuum pumping and preventing wafer adsorption displacement; when the air passage is blocked, the three-way valve switches the path, and the backflush tank (replenished with high-pressure gas from the vacuum pump outlet) can blow back along the air passage. Combined with air filter one (filtering impurities in the adsorbed air) and air filter two (filtering impurities in the backflush gas), air passage cleaning is achieved without disassembly, ultimately improving the quartz wafer dicing yield. The equipment does not require shutdown for unblocking, extending continuous operation time and reducing production losses. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the overall structure of the vacuum equipment for processing quartz semiconductor components as shown in this invention; Figure 2 This is an exploded view of the structure of the vacuum adsorption stage of the vacuum equipment for processing quartz semiconductor components according to the present invention; Figure 3 This is a schematic diagram of the substrate structure of the vacuum equipment for processing quartz semiconductor components as shown in this invention; Figure 4 This is a cross-sectional view of the vacuum adsorption stage of the vacuum equipment for processing quartz semiconductor components according to the present invention; Figure 5 for Figure 4 Enlarged view of point A in the middle; Figure 6 This is a schematic diagram of the assembly of the control components and the substrate of the vacuum equipment for processing quartz semiconductor components according to the present invention; Figure 7 This is a partial structural schematic diagram of the control component of the vacuum equipment for processing quartz semiconductor components according to the present invention; Figure 8 This is a schematic diagram of the structure of the vacuum assembly of the vacuum equipment for processing quartz semiconductor components according to the present invention.

[0018] The reference numerals in the accompanying drawings of this invention are as follows: 11. Evacuation shell; 12. Substrate; 13. Platform; 21. Through hole one; 211. Fixed air passage; 212. Variable air passage; 22. Through hole two; 221. Connecting air passage one; 222. Connecting air passage two; 23. Sealing ring one; 24. Sealing ring two; 31. Iron ring; 32. Vertical pole; 33. Sealing cone; 34. Guide rod; 35. Spring; 36. Electromagnet; 41. Three-way valve; 42. Buffer air tank; 43. Backflush air tank; 44. Vacuum pump; 45. Air filter one; 46. Air filter two. Detailed Implementation

[0019] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0020] See Figures 1-8 As shown, an embodiment of the present invention is provided, and a vacuum apparatus for processing quartz semiconductor components will be described in detail below: See Figures 1-2 As shown, a vacuum apparatus for processing quartz semiconductor components includes: The vacuum adsorption stage includes an air extraction shell 11 fixedly connected to the top of the equipment cabinet, a base plate 12 fixedly connected to the top port of the air extraction shell 11, and a platform 13 fixedly connected to the top of the base plate 12.

[0021] It should be noted that in the quartz semiconductor wafer dicing process, existing technologies require the replacement of vacuum adsorption stages of corresponding sizes for wafers of different sizes, resulting in low equipment conversion efficiency. Frequent replacements can also lead to a decrease in the positioning accuracy of the vacuum adsorption stage and cause errors during wafer processing. The vacuum adsorption stage in this solution serves as the core load-bearing and negative pressure conduction structure. Its working principle is as follows: the vacuum shell 11 provides a closed negative pressure containment space for the entire adsorption system. The substrate 12 achieves gas path sealing through a fixed connection with the top port of the vacuum shell 11, and at the same time serves as the mounting base for the stage plate 13, ensuring that the surface of the stage plate 13 is flat. The stage plate 13 directly contacts the quartz semiconductor wafer, and its flat top surface provides a stable support surface for the wafer. Moreover, the stage plate 13 is a fixed structure that does not need to be replaced (in this embodiment, for the maintenance of the internal gas path, the fixing method between the stage plate 13 and the substrate 12 is preferably bolted). Different sizes of wafers can be adapted by adjusting the subsequent gas path and control components, avoiding the low efficiency caused by replacing the vacuum adsorption stage in the prior art, as well as the problems of inaccurate focusing, uneven stress, and inconsistent dimensions caused by errors in manual calibration after frequent shutdowns. The three components work together to form an integrated structure of "closed negative pressure cavity - sealed conductive layer - wafer support surface", which can ensure the stable positioning of the wafer during the dicing process and reduce the risk of dicing deviation caused by unstable support or frequent replacement of the stage 13.

[0022] See Figure 2As shown, the vacuum equipment for processing quartz semiconductor components also includes a gas path assembly, which includes multiple through holes 21 with progressively increasing diameters on a platform 13, and multiple through holes 22 on a substrate 12 corresponding to the positions of each through hole 21. Each ring of through holes 21 includes multiple through holes 21 with the same inner diameter, and the spacing between each through hole 21 in each ring is the same. Similarly, each ring of through holes 22 includes multiple through holes 22 with the same inner diameter, and the spacing between each through hole 22 in each ring is the same. The circle formed by connecting the centers of each ring of through holes 21 is concentric with the center of the platform 13, and similarly, the circle formed by connecting the centers of each ring of through holes 22 is concentric with the center of the substrate 12. Among them, the through hole 21 and through hole 22 at the innermost ring are the fixed air passage 211 and the docking air passage 221, respectively. All the remaining through holes 21 and through holes 22 are the variable air passage 212 and the docking air passage 222, respectively. The top port of each docking air passage 222 is flared.

[0023] For further details, please refer to [link / reference]. Figure 3 As shown, the gas path assembly also includes a sealing ring 23 for sealing the connection between the fixed gas passage 211 and the docking gas passage 221. The sealing ring 23 is embedded in the top port of the docking gas passage 221. The gas path assembly also includes a sealing ring 24 for sealing the connection between the variable gas passage 212 and the docking gas passage 222. The sealing ring 24 is embedded in the top port of the docking gas passage 222.

[0024] It should be noted that in existing technologies, the gas path of the vacuum adsorption stage for wafer processing is designed with a fixed size. When changing the adsorption stage, the gas path structure must be changed simultaneously, which is cumbersome, has poor adaptability, and is accompanied by frequent downtime, interrupting continuous production and causing long process times. In this solution, the gas path assembly, as the key channel for negative pressure transmission, works as follows: the fixed gas channel 211 and the docking gas channel 1 221 are connected to each other, forming a core negative pressure channel that runs through the stage 13 and the substrate 12, ensuring that the central area of ​​the wafer always receives a stable negative pressure, which meets the basic requirement of wafer center positioning in semiconductor dicing; the variable gas channel 212 with a progressively increasing diameter and the docking gas channel 222 are distributed in a concentric circle, which can cover the edge area of ​​wafers of different sizes. It can adapt to different sizes by controlling the on and off without changing the gas path structure, overcoming the problem of... The existing technology has the drawback of requiring the gas path to be replaced along with the adsorption stage; the flared top port of the second docking gas path 222 provides a precise sealing basis for the opening and closing of the gas path, and can achieve reliable closure with the help of the sealing components; the sealing ring 23 and the sealing ring 24 enhance the sealing performance of the fixed gas path 211, the variable gas path 212 and the docking gas path 221 and the docking gas path 222 respectively, avoiding negative pressure leakage. Especially during semiconductor cutting, it can prevent insufficient adsorption force at the wafer edge due to gas path leakage, which can lead to cutting deviation. It significantly improves the equipment's adaptability to wafers of different sizes.

[0025] See Figures 4-7 As shown, the vacuum equipment for processing quartz semiconductor components also includes a control component. The control component includes multiple iron rings 31 with progressively increasing inner diameters, correspondingly positioned below each of the two docking air channels 222; uprights 32 disposed within each of the two docking air channels 222; sealing cones 33 fixedly connected to the top of each upright 32; electromagnets 36 fixedly connected to both sides inside the vacuum shell 11; and multiple coiled springs 35 uniformly fixedly connected to the bottom of each iron ring 31 along the circumferential direction. The diameter of the upright 32 is smaller than the inner diameter of the two docking air channels 222 (in this embodiment, to ensure the gas flow rate, it is preferable that the diameter of the upright 32 is ≤ half the inner diameter of the two docking air channels 222), and the bottom end of each upright 32 is fixedly connected to the iron ring 31 located directly below it. In this embodiment, to facilitate the setup of the support rod 32 structure, the inner diameter of the second docking air channel 222 should be larger than the inner diameter of the upper variable air channel 212. This is because in the prior art, air channels directly acting on the bottom of the wafer are typically quite small. To ensure compatibility with existing specifications, the inner diameter of the variable air channel 212 is similar to that of the prior art. Given the smaller inner diameter of the variable air channel 212, the diameter of the second docking air channel 222 should be larger to facilitate the setup of the control components. This approach facilitates structural setup and complies with existing processing technologies. The sealing cone 33 is smaller than the size of the flared opening of the second docking air channel 222, and is located inside the flared opening. The bottom ends of each spring 35 are fixedly connected to the suction shell 11. The elastic coefficient of each spring 35 decreases sequentially with the increase of the inner diameter of its top iron ring 31. The electromagnet 36 is located below the iron ring 31, and the two are separated by a distance.

[0026] Furthermore, the control assembly also includes a plurality of guide rods 34 uniformly fixedly connected to each iron ring 31, and each guide rod 34 is slidably connected inside the base plate 12.

[0027] It should be noted that in existing technologies, the need to replace vacuum adsorption stages of different sizes to adapt to wafers leads to time-consuming and inefficient equipment conversion, frequent downtimes disrupting continuous production processes, and manual calibration after replacement requires the use of tools. Frequent manual calibration introduces errors, and inaccurate flatness calibration during stage replacement can cause problems such as inaccurate focusing, uneven stress, and inconsistent dimensions in subsequent laser and optical processing, as well as other mechanical processing such as cutting. The control components of this solution can solve this problem. During the quartz semiconductor wafer cutting process, it achieves adaptation to wafers of different sizes by precisely adjusting the opening and closing of the variable air channel 212. The working principle is as follows: initially, when the spring 35 is in a relaxed state, the iron ring 31 drives the upright rod 32 to move upward under the action of the elastic force, so that the sealing cone 33 is located in the upper middle part of the flared part of the docking air channel 222 (it should be noted that the top of the sealing cone 33 must always be in no contact with the bottom port of the variable air channel 212). In this state, to facilitate gas passage, the variable air passage 212 is connected to the docking air passage 222, and negative pressure can be transmitted to the corresponding area of ​​the platform 13 through this air passage; when the electromagnet 36 is energized, the magnetic attraction it generates will overcome the elastic force of the spring 35 to attract the iron ring 31 to move down, and the upright rod 32 will drive the sealing cone 33 to move down synchronously. When it moves down to the bottom of the horn mouth, the sealing cone 33 is tightly attached to the bottom port of the horn mouth, realizing the sealing of the docking air passage 222, and the corresponding variable air passage 212 is closed.

[0028] Regarding the relationship between the spring constant and the "hardness" of spring 35: The "hardness" of spring 35 is essentially determined by its spring constant (also known as the stiffness coefficient, denoted by k), which can be intuitively explained by Hooke's Law (F=kx, where F is the force on spring 35 and x is the deformation of spring 35): Under the same deformation x, the larger the spring constant k, the larger the force F required for spring 35, that is, the "harder" spring 35 is; conversely, the smaller k is, the smaller the force F required, and the "softer" spring 35 is. For example, if the spring constant k of the outer coil spring 35 is 5N / mm and the spring constant k of the inner coil spring 35 is 10N / mm, when both need to be compressed by 2mm, the outer coil spring 35 only requires a force of 10N, while the inner coil requires a force of 20N, obviously the outer coil spring 35 is softer.

[0029] In this scheme, the elastic coefficient of the spring 35 corresponding to each iron ring 31 decreases sequentially as the inner diameter of the iron ring 31 increases (i.e., the k value of the outer ring spring 35 is smaller and softer; the k value of the inner ring spring 35 is larger and harder). Combined with the principle of sequential adjustment of the magnetic attraction force of the electromagnet 36 (the magnetic attraction force is controlled by changing the input current: the larger the current, the stronger the magnetic attraction force), a precise hierarchical control logic is formed: when a small current is applied to the electromagnet 36, the magnetic attraction force it generates can only overcome the elastic force of the outer ring soft spring 35 (because k is small, the required force is small), causing the outer ring iron ring 31 to drive the sealing cone 33 to move down and close the outer ring variable air passage 212; if the current is further increased, the magnetic attraction force is strengthened to the point that it can overcome the elastic force of the inner ring hard spring 35 (because k is large, the required force is large), thereby closing the inner ring variable air passage 212. With this design, the variable air channel 212 can close sequentially from the outside in, precisely matching the edge range of quartz wafers of different sizes (e.g., when cutting a 6-inch wafer, all air channels outside the 6-inch range are closed; when cutting an 8-inch wafer, only the air channels outside the 8-inch range are closed). Size adaptation can be completed without changing the vacuum adsorption stage, completely solving the problem of low equipment specification conversion efficiency in the existing technology.

[0030] To better understand the above, the following example is provided in this embodiment: Suppose that the fixed airway 211 has only one ring and the variable airway 212 has only two rings, with the ring areas corresponding to 6-inch, 8-inch, and 12-inch wafers respectively. Thus, when a 12-inch wafer needs to be adsorbed, all variable airways 212 are in the open state. When an 8-inch wafer needs to be adsorbed, the outermost variable airway 212 is in the closed state, and the remaining variable airways 212 are in the open state. Similarly, when a 6-inch wafer needs to be adsorbed, all variable airways 212 are in the closed state.

[0031] Furthermore, the guide rod 34 restricts the movement direction of the iron ring 31 through sliding cooperation with the base plate 12, preventing the upright rod 32 from colliding and shifting with the second connecting air passage 222, ensuring the precise cooperation between the sealing cone 33 and the horn mouth, and further improving the reliability of air path control.

[0032] See Figure 8 As shown, the vacuum equipment for processing quartz semiconductor components also includes a vacuum assembly. The vacuum assembly includes a three-way valve 41 fixedly connected to the inner cavity of the vacuum housing 11, a buffer gas tank 42 and a backflush gas tank 43 fixedly connected to the remaining two valve ports of the three-way valve 41 respectively, and a vacuum pump 44 whose inlet is fixedly connected to the outlet of the buffer gas tank 42. The outlet of the vacuum pump 44 is fixedly connected to the inlet of the backflush gas tank 43. The three-way valve 41, the buffer gas tank 42, the backflush gas tank 43 and the vacuum pump 44 are all fixedly installed inside the equipment cabinet.

[0033] It should be noted that in the existing technology, vacuum equipment often fails to adsorb after the adsorption stage is replaced due to unstable negative pressure or residual debris in the air passage, which further reduces the efficiency of the equipment and the accuracy of wafer positioning. The vacuum assembly in this solution is specifically designed for quartz semiconductor cutting scenarios. It not only improves size adaptation efficiency in conjunction with the control assembly but also solves the aforementioned stability issues. Its working principle is as follows: After the vacuum pump 44 is started, it forms a communication path with the inner cavity of the suction shell 11 through the buffer gas tank 42, the three-way valve 41, and the buffer gas tank 42. The buffer gas tank 42 can store a certain amount of negative pressure to stabilize the pressure fluctuations during the suction process and avoid wafer adsorption instability caused by sudden pressure changes. This ensures the continuous stability of negative pressure when cutting wafers of different sizes, eliminating the need to replace the adsorption stage and readjust the negative pressure as required by existing technologies. When the debris generated during cutting blocks the gas path, the three-way valve 41 switches the path, connecting the backflush gas tank 43 with the inner cavity of the suction shell 11. The high-pressure gas provided by the outlet of the vacuum pump 44 and stored in the backflush gas tank 43 can be blown back along the gas path to remove debris from each gas channel, avoiding adsorption failure due to blockage and reducing downtime for cleaning (it is also possible that backflush can cool the electromagnet 36, improving the stability of the equipment). Among them, the three-way valve 41 and the vacuum pump 44 are existing technologies, and their specific technical principles will not be elaborated here. The vacuum component and the control component work together to further improve the equipment's adaptability to wafers of different sizes in terms of both negative pressure stability and airway cleanliness, meeting the high-efficiency production requirements of semiconductor cutting.

[0034] Furthermore, the vacuum assembly also includes an air filter 45 connected in series in the pipeline between the valve port of the three-way valve 41 and the air inlet of the buffer gas tank 42. The air filter 45 can reduce the probability of external impurities entering the vacuum pump 44 and improve the service life of the vacuum pump 44.

[0035] Furthermore, the vacuum assembly also includes an air filter 46 connected in series in the pipeline between the valve port of the three-way valve 41 and the outlet of the backflush gas tank 43. The air filter 46 can reduce the probability of impurities in the gas pipeline entering the vacuum adsorption stage, and prevent impurities from entering the fixed air channel 211 and the docking air channel 221, as well as the variable air channel 212 and the docking air channel 222, so as to avoid blockage of the narrow air channel and cause the quartz semiconductor vacuum adsorption to be weak.

[0036] It should be noted that the terms “comprising,” “including,” or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0037] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A vacuum device for processing quartz semiconductor components, characterized in that, The vacuum adsorption platform comprises a vacuum suction shell, a base plate fixedly connected to the top of the vacuum suction shell, and a platform fixedly connected to the top of the base plate. The air path assembly comprises a plurality of holes one with increasing diameters fixedly arranged on the platform, and a plurality of holes two corresponding to the positions of the holes one fixedly arranged on the base plate, the hole one and the hole two in the innermost circle are a fixed air channel and a butt joint air channel one respectively, the remaining holes one and holes two are variable air channels and butt joint air channels two respectively, the top of each butt joint air channel two is in a trumpet shape. The control assembly comprises a plurality of iron rings with increasing diameters arranged below each butt joint air channel two, a plurality of vertical rods movably arranged in each butt joint air channel two, a plurality of sealing cones fixedly connected to the top of each vertical rod, a plurality of electromagnets fixedly connected to the inside of the vacuum suction shell, and a plurality of springs fixedly connected to the bottom of each iron ring in the circumferential direction, the bottom of each vertical rod is fixedly connected to the iron ring directly below, the bottom of each spring is fixedly connected to the vacuum suction shell, the spring constant of each spring decreases with the increase of the inner diameter of the iron ring at the top, and the electromagnet is below the iron ring with a distance. The diameter of the vertical rod is smaller than the inner diameter of the butt joint air channel two.

2. A vacuum apparatus for processing a quartz semiconductor component according to claim 1, characterized by: The air path assembly further comprises a sealing ring one for sealing the butt joint between the fixed air channel and the butt joint air channel one, and the sealing ring one is embedded in the top port of the butt joint air channel one.

3. A vacuum apparatus for processing a quartz semiconductor component according to claim 2, characterized in that: The air path assembly further comprises a sealing ring two for sealing the butt joint between the variable air channel and the butt joint air channel two, and the sealing ring two is embedded in the top port of the butt joint air channel two.

4. A vacuum apparatus for processing a quartz semiconductor component according to claim 3, wherein: The control assembly further comprises a plurality of guide rods fixedly connected to each iron ring, and each guide rod is slidingly connected to the inside of the base plate.

5. A vacuum apparatus for processing a quartz semiconductor component according to claim 4, wherein: The vacuum assembly comprises a three-way valve fixedly connected to the inner cavity of the vacuum suction shell, a buffer gas tank and a back-blowing gas tank fixedly connected to the remaining two valve ports of the three-way valve respectively, and a vacuum pump with the gas inlet fixedly connected to the gas outlet of the buffer gas tank, the gas outlet of the vacuum pump is fixedly connected to the gas inlet of the back-blowing gas tank, and the three-way valve, the buffer gas tank, the back-blowing gas tank and the vacuum pump are fixedly installed in the inside of the equipment cabinet.

6. A vacuum apparatus for processing a quartz semiconductor component according to claim 5, wherein: The vacuum assembly further comprises an air filter one connected in series on the pipeline between the valve port of the three-way valve and the gas inlet of the buffer gas tank.

7. A vacuum apparatus for processing a quartz semiconductor component according to claim 6, wherein: The vacuum assembly further comprises an air filter two connected in series on the pipeline between the valve port of the three-way valve and the gas outlet of the back-blowing gas tank.

8. A vacuum apparatus for processing a quartz semiconductor component according to claim 7, characterized by: ​

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