Intelligent information processing system and method of microelectronic circuit

Abstract

The invention relates to the technical field of microelectronic circuits, in particular to an intelligent information processing system and method of a microelectronic circuit. The method comprises the following steps: acquiring an electronic device information set, and based on the electronic device information set, analyzing the position deviation influence of a thermal-electric multi-physical coupling effect on the position of a microbubble in a middle layer of the multilayer circuit board to obtain dynamic thermoelectric coupling characteristic information; based on the dynamic thermoelectric coupling characteristic information, analyzing the evolution stage of the microbubble under the dynamic multi-field coupling influence to obtain a multi-stage evolution result; and based on the multi-stage evolution result, evaluating the micro-bubble potential hazard degree corresponding to each evolution stage, and outputting a micro-bubble risk report. Errors caused by a single physical field or neglecting interaction are avoided, reliability of circuit risk assessment is guaranteed, service life and stability of a microelectronic circuit are enhanced, preventive maintenance is assisted, adverse effects of microbubbles on the circuit are reduced, and maintenance cost and fault probability are reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of microelectronic circuits, in particular to an intelligent information processing system and method for microelectronic circuits. BACKGROUND

[0002] In the fields of high-end electronic equipment, industrial control, aerospace, etc., microelectronic circuits are the core control and signal processing units. Multi-layer circuit boards, with the advantages of high-density integration and high space utilization, have become the key carriers to carry complex circuit functions. Microbubbles in the inner layers of multi-layer circuit boards are typical potential defects. The evolution behavior of microbubbles in the process of equipment operation directly determines the electrical performance stability, structural integrity and overall service life of the circuit, which is crucial for the reliable operation of electronic equipment.

[0003] However, in the performance evaluation process of high-reliability demand scenarios, the existing microelectronic circuit microbubble evaluation technology does not include multi-physical coupling as a key working condition in special test conditions. Therefore, there is a problem that the evaluation dimension is disconnected with the actual demand on site. It is also difficult to reproduce the complete evolution process of microbubbles, resulting in frequent non-planned shutdown of electronic equipment, sudden failure of key circuits, and system failure induced by safety accidents, which not only significantly reduces the efficiency of equipment operation in high-reliability scenarios, but also poses a major safety hazard to safety production. SUMMARY

[0004] The present application provides an intelligent information processing system and method for microelectronic circuits to solve the above problems. In a first aspect, the present application provides an intelligent information processing method for microelectronic circuits, the method comprising:

[0005] Obtaining an electronic device information set, based on the electronic device information set, analyzing the position deviation effect of the position of the microbubble in the inner layer of the multi-layer circuit board caused by the thermal-electric multi-physical coupling, obtaining dynamic thermal-electric coupling characteristic information; based on the dynamic thermal-electric coupling characteristic information, analyzing the evolution stage of the microbubble under the influence of dynamic multi-field coupling, obtaining multi-stage evolution results; based on the multi-stage evolution results, evaluating the potential harm degree of the microbubble corresponding to each evolution stage, and outputting a microbubble risk report.

[0006] By the above technical solution, a systematic solution is provided for microelectronic circuit microbubble risk control, which has remarkable effect. Compared with the existing single field and static analysis technology, the introduction of thermal-electric multi-physical coupling and dynamic multi-field coupling effect fits the actual working scene of the circuit, can accurately capture the position change and evolution law of the microbubble, and relies on the multi-dimensional hazard evaluation system constructed based on stages, positions, application scenes and sizes to avoid "one-size-fits-all" judgment, greatly reduce risk misjudgment, improve analysis accuracy and comprehensiveness, and through the division of the microbubble evolution stage, the trend of the microbubble from low hazard to high hazard can be identified in advance to gain the intervention window period for the operation and maintenance team, and the differentiated response measures in the risk report can avoid fault burst and reduce excessive maintenance, realize risk early prediction and accurate intervention. At the same time, the data such as the initial microbubble distribution and coupling effect in the report can guide the circuit design optimization and production process improvement, reduce the microbubble defect rate from the source, prolong the equipment life, improve the operation stability, reduce the equipment maintenance and downtime frequency, and are especially suitable for high reliability demand fields such as aerospace and vehicle-mounted electronics.

[0007] Optionally, the electronic device information set includes device working temperature data, device working current data and multi-layer circuit board layer structure characteristics; based on the device working temperature data, in combination with the multi-layer circuit board layer structure characteristics, the position offset trend of the microbubble caused by the difference in material thermal expansion of the multi-layer circuit board under thermal load is analyzed to obtain a thermal-induced offset component; based on the device working current data, in combination with the multi-layer circuit board layer structure characteristics, the position offset trend of the microbubble caused by uneven current distribution of the multi-layer circuit board under an electric field is analyzed to obtain an electric-induced offset component; based on the thermal-induced offset component, in combination with the electric-induced offset component, the interactive influence and dynamic superposition process of the microbubble position offset under the thermal-electric physical field coupling effect are analyzed to obtain the dynamic thermal-electric coupling characteristic information.

[0008] Optionally, the device working temperature data includes thermal conductivity coefficients of each layer of substrate and thermal expansion coefficients of each layer of substrate; the multi-layer circuit board layer structure characteristics include interlayer bonding strength, interlayer thermal resistance, thickness of each layer, width of conductive circuit, spacing of conductive circuit and thickness of dielectric layer; based on the thermal expansion coefficients of each layer of substrate, in combination with the thickness of each layer, the difference in thermal expansion deformation of adjacent material layers under thermal load is analyzed to obtain an interlayer deformation mismatch amount; based on the interlayer deformation mismatch amount, in combination with the interlayer bonding strength and the interlayer thermal resistance, the interfacial shear stress and thermal resistance distribution caused by the interlayer deformation mismatch amount under interlayer constraint are analyzed to obtain an interfacial stress-thermal resistance coupling state; based on the interfacial stress-thermal resistance coupling state, the thermal-induced driving force and the thermal-induced position offset direction of the microbubble in the thermal-mechanical environment are analyzed, and the thermal-induced driving force and the thermal-induced position offset direction are integrated to obtain the thermal-induced offset component.

[0009] Optionally, the device operating current data includes resistivity of each layer of substrate, dielectric constant of each layer of substrate; based on the resistivity of each layer of substrate, the skin effect and the edge effect generated when current flows in the multi-layer circuit board are analyzed in combination with the conductive line width and the conductive line spacing to obtain a local current density distribution; based on the local current density distribution, the non-uniform electric field strength distribution caused by the local current density distribution is analyzed in combination with the dielectric layer thickness and the dielectric constant of each layer of substrate to obtain a gradient electric field distribution; based on the gradient electric field distribution, the dielectrophoresis force acting on the micro-bubbles in the gradient electric field and the electrically induced position shift direction are analyzed, and the dielectrophoresis force acting size and the electrically induced position shift direction are integrated to obtain the electrically induced shift component.

[0010] Optionally, based on the thermally induced shift component, the modulation effect of temperature change on material resistivity is analyzed, and then the electrically induced shift component is corrected according to the modulated resistivity to obtain a first corrected electrically induced shift component; based on the electrically induced shift component, the additional temperature rise generated by the current distribution is analyzed, and the thermally induced shift component is corrected according to the additional temperature rise to obtain a first corrected thermally induced shift component; the first corrected thermally induced shift component and the first corrected electrically induced shift component are vector synthesized to obtain an initial coupling shift trend; the new local temperature field and electric field changes caused by the initial coupling shift trend are iteratively analyzed, and the feedback path is repeated to simulate the time-varying motion trajectory of the micro-bubbles under the coupling action of the thermal-electric physical field to obtain a corrected thermoelectric coupling induced shift component; based on the corrected thermoelectric coupling induced shift component, the dynamic thermoelectric coupling characteristic information used to represent the final comprehensive motion trend of the micro-bubbles is obtained.

[0011] Optionally, based on the thermally induced position shift direction, the synergistic or antagonistic relationship between the thermally induced action and the electrically induced action in the direction is analyzed in combination with the electrically induced position shift direction to obtain a thermal-electric action direction relationship; the thermal-electric action direction relationship is analyzed, if the thermally induced position shift direction and the electrically induced position shift direction tend to be in the same direction, the thermally induced driving force size and the dielectrophoresis force acting size are superimposed, and the same direction is taken as the synthetic direction to obtain a strong synthetic shift direction and a superimposed force; the thermal-electric action direction relationship is analyzed, if the thermally induced position shift direction and the electrically induced position shift direction tend to be in opposite directions, the thermally induced driving force size and the dielectrophoresis force acting size are offset, and the direction corresponding to the remaining net force is taken as the synthetic direction to obtain a weak synthetic shift direction and an offset force; the strong synthetic shift direction, the superimposed force, the weak synthetic shift direction and the offset force are integrated to obtain the initial coupling shift trend.

[0012] Optionally, based on the modified thermoelectric coupling induced displacement component, the microbubble movement direction and the microbubble position information are analyzed to determine whether the microbubble is in an initial stable stage that does not affect the circuit performance, and a performance incubation period determination result is obtained; if not in the performance incubation period, the migration rate and the aggregation tendency of the microbubble under the action of the thermoelectric coupling are analyzed to determine whether the microbubble enters a gradual development stage of size expansion and interface peeling, and a damage accumulation period determination result is obtained; if not in the damage accumulation period, it is determined whether the aggregation position of the microbubble is at a key conduction path or an interlayer interface to determine whether it triggers a final failure stage of circuit short circuit or structure cracking, and a functional failure period determination result is obtained; the performance incubation period determination result, the damage accumulation period determination result and the functional failure period determination result are integrated to obtain the multi-stage evolution result.

[0013] Optionally, based on the size of the thermally induced driving force and the size of the dielectrophoresis force, the motion acceleration and direction stability of the microbubble in the thermoelectric coupling field are analyzed to obtain the microbubble migration behavior characteristics; based on the microbubble migration behavior characteristics, the probability of collision and merging of the microbubble with other microbubbles or interface defects in the migration process is analyzed in combination with the layered structure characteristics of the multi-layer circuit board to obtain the microbubble aggregation tendency; based on the microbubble aggregation tendency, the rate of increase in the size of the microbubble due to the aggregation effect and the size of the peeling force generated by the microbubble on the surrounding material after the size increases are analyzed to obtain the interface peeling risk characteristics; based on the interface peeling risk characteristics, it is determined whether the microbubble enters a damage development stage characterized by size expansion and interface peeling, and the damage accumulation period determination result is output.

[0014] Optionally, based on the time-varying motion trajectory, the final aggregation position area of the microbubble is determined; based on the final aggregation position area of the microbubble, the spatial positional relationship between the final aggregation position area and a key conduction path in a preset circuit layout design is analyzed to determine whether the microbubble causes the conduction path to be blocked or current to be leaked, and an electrical performance failure risk is obtained; based on the final aggregation position area of the microbubble, the spatial positional relationship between the final aggregation position area and a preset interlayer bonding interface is analyzed to determine whether the microbubble causes interlayer delamination or crack propagation, and a structural integrity failure risk is obtained; based on the electrical performance failure risk and the structural integrity failure risk, it is determined whether to enter a failure stage of complete loss of circuit function, and the functional failure period determination result is output.

[0015] In a second aspect, the present application provides an intelligent information processing system for a microelectronic circuit, the system comprising:

[0016] a thermoelectric coupling module configured to obtain an electronic device information set, and based on the electronic device information set, analyze a positional deviation effect caused by a thermoelectric multi-physical coupling on a position of a microbubble in a multi-layer circuit board, and obtain dynamic thermoelectric coupling characteristic information;

[0017] a bubble evolution module, configured to analyze evolution stages of the microbubbles under the influence of the dynamic multi-field coupling based on the dynamic thermoelectric coupling feature information, and obtain multi-stage evolution results;

[0018] a bubble evaluation module, configured to evaluate potential harm degrees of the microbubbles in each evolution stage based on the multi-stage evolution results, and output a microbubble risk report. BRIEF DESCRIPTION OF DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed to be used in the embodiments or prior art description will be briefly introduced. Obviously, the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0020] Figure 1 An application scenario schematic diagram provided by an embodiment of the present application;

[0021] Figure 2 A flowchart of an intelligent information processing method of a microelectronic circuit provided by an embodiment of the present application;

[0022] Figure 3 A structural schematic diagram of an intelligent information processing system of a microelectronic circuit provided by an embodiment of the present application. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions in the embodiments of the present application will be described clearly and completely in the following with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are some embodiments of the present application, not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0024] In addition, the term "and / or" in this paper is only to describe the association relationship of the associated objects, which means that there can be three relationships, for example, A and / or B, which can represent the three cases of A alone, A and B together, and B alone. In addition, the character " / " in this paper, unless otherwise specified, generally represents an "or" relationship between the associated objects before and after it.

[0025] The embodiments of the present application will be further described in detail below with reference to the drawings of the specification.

[0026] Microelectronic circuits are core control and signal processing units, in which multi-layer circuit boards have the advantages of high-density integration and high space utilization, and become the key carriers to carry complex circuit functions, and the micro-bubbles in the inner layer of the multi-layer circuit board are typical potential defects, and the evolution behavior in the operation process of the equipment directly determines the electrical performance stability, structural integrity and overall service life of the circuit.

[0027] Based on this, the application provides a kind of intelligent information processing system and method of microelectronic circuit, accurately identify the influence of micro-bubble aggregation position on key structure of circuit, break the limitation of existing evaluation, ensure that the judgment of circuit function failure risk is more comprehensive, all can be accurately captured, avoid the circuit failure caused by risk misjudgment, secondly, the judgment process is in line with the actual failure mechanism of microelectronic circuit, can provide clear direction for circuit design optimization, reduce the failure risk caused by micro-bubble from the source, the output result can directly support the reliability control of circuit whole life cycle.

[0028] Figure 1 An application scenario schematic diagram is provided for the application, accurately captures the position change and evolution law of micro-bubble, and a multi-dimensional hazard evaluation system is built relying on stage, position, application scenario and size, avoids "one size fits all" determination, greatly reduces risk misjudgment, improves analysis accuracy and comprehensiveness, by dividing micro-bubble evolution stage, the trend of its transition from low hazard to high hazard can be identified in advance, and the differentiated response measures in the risk report are matched, which not only avoids sudden failure, but also reduces excessive maintenance, realizes risk early prediction and accurate intervention.

[0029] Specifically, the method provided by the application is applied to any server, the server and the electronic device factory white paper are data sources, the electronic device information set provided by the electronic device factory white paper is obtained, the complete evolution process of micro-bubble is reproduced, and the output micro-bubble risk report is generated, which is given to the factory operation and maintenance personnel, reduces the frequent occurrence of electronic equipment unplanned shutdown, key circuit sudden failure induced system failure and other safety accidents, not only significantly reduces the equipment running efficiency in high reliability scene, but also lays a major hidden danger for safety production.

[0030] The specific implementation mode can refer to the following embodiments.

[0031] Figure 2 A flow chart of a microelectronic circuit intelligent information processing method is provided for an embodiment of the application, the method of the embodiment can be applied to the server in the above scene. As shown in the figure, Figure 2 The method comprises:

[0032] S201, obtain an electronic device information set, analyze the position deviation influence of the position of the micro-bubble in the multi-layer circuit board caused by the thermal-electric multi-physical coupling based on the electronic device information set, and obtain dynamic thermal-electric coupling characteristic information.

[0033] The electronic device information set can be a set of information that can reflect the properties of the electronic device itself in the process of intelligent information processing of microelectronic circuits, and is derived from the white book of the electronic device out of the factory. The thermo-electric multi-physical coupling can be the subsequent processing of the electronic device when the microelectronic circuit is working, which is powered on and heated to generate heat to form a temperature field. The multi-layer circuit board can be made by alternately stacking the conductive circuit layer and the insulating substrate layer through the bonding process. The in-layer micro-bubble can be a micron-sized micro-bubble existing in the interior of each layer of the multi-layer circuit board. The position deviation effect can be the thermal stress generated by the thermal expansion and contraction of the circuit board and the electric field force generated by the difference in local current density under the thermo-electric multi-physical coupling. The dynamic thermo-electric coupling characteristic information can be the influence of the thermo-electric coupling on the position deviation of the micro-bubble.

[0034] Specifically, during the operation of the microelectronic circuit, the thermo-electric multi-physical coupling will cause local temperature changes and changes in electric field distribution, thereby exerting thermal stress and electric stress on the in-layer micro-bubble, causing position deviation. If this influence is ignored, the micro-bubble may move to a critical area, causing a short circuit, performance degradation, or permanent failure of the circuit. Obtaining the electronic device information set is the basis of the entire analysis, because without accurate device information, a reliable multi-physical field model cannot be established, and the analysis results will lose accuracy. Analyzing the position deviation effect is crucial because the change in the position of the micro-bubble is directly related to the reliability of the circuit. The dynamic thermo-electric coupling characteristic information provides real-time change data, providing input for subsequent evolution analysis. If this step is not performed, the risk of bubble movement cannot be quantified, which may lead to unpredictable failures and increase the probability of circuit failure; ensures that the dynamic behavior of the micro-bubble under thermo-electric coupling can be accurately captured, providing reliable data input for subsequent evolution analysis, and enhancing the early identification of potential risks to the circuit.

[0035] S202, based on the dynamic thermo-electric coupling characteristic information, analyzing the evolution stage of the micro-bubble under the influence of dynamic multi-field coupling, and obtaining a multi-stage evolution result.

[0036] The dynamic multi-field coupling effect can be the thermo-electric multi-physical coupling physical field in the actual operation of the microelectronic circuit, and each field dynamically changes with time and superimposes on each other. The evolution stage under the influence of dynamic multi-field coupling can be the state change stage with clear characteristic differences experienced by the in-layer micro-bubble over time under the influence of dynamic multi-field coupling. The multi-stage evolution result can be obtained by analyzing the dynamic state change of the micro-bubble.

[0037] Specifically, the dynamic evolution process of microbubbles in the circuit board poses a potential threat to its long-term reliability. However, due to the limitations of static detection and single field coupling analysis, the existing technology is difficult to comprehensively assess the risk. The lack of dynamic evolution tracking leads to a lag in risk prediction. A microbubble that is "small in size and stable in position" during maintenance may rapidly expand and approach critical circuits in the future. However, due to the lack of continuous monitoring, the intervention opportunity is delayed. The evolution stage is not distinguished, which leads to misjudgment of the hazard mechanism. The nature of the hazard of microbubbles is different at each stage. If the risk is only divided according to the current size, a small bubble in the rapid expansion period may be misjudged as low risk, leading to excessive or insufficient maintenance strategies. The neglect of multi-physical field coupling effects further distorts the stage analysis. Vibration can accelerate gas diffusion and promote microbubbles to enter the rapid expansion period in advance. Humidity reduces the strength of the substrate and increases the probability of rupture. If only relying on thermal-electric coupling analysis, the stage determination will deviate seriously from the actual situation. Therefore, through dynamic multi-field coupling analysis and evolution stage division, the dynamic characteristics such as position displacement and internal pressure are accurately quantified, and the trend is predicted, thereby providing the basis for differentiated maintenance, breaking through the static limitations, and ensuring the effectiveness of circuit reliability control.

[0038] S203, based on the multi-stage evolution results, evaluating the potential hazard degree of microbubbles in each evolution stage, and outputting a microbubble risk report.

[0039] The potential hazard degree can be the damage risk level caused by the state change of microbubbles in different evolution stages to the structural integrity, electrical performance of multi-layer circuit board, and microelectronic circuit reliability. The microbubble risk report can be a comprehensive document based on the multi-stage evolution results and hazard evaluation conclusions.

[0040] Specifically, during the operation of the microelectronic circuit, evaluating the hazard degree is the core of risk management. The hazards in different evolution stages are different. If the hazard degree is not evaluated, high-risk bubbles cannot be prioritized for processing, which may lead to resource waste or failure. The output of the risk report provides decision support to help engineers take targeted measures. This step ensures the application value of the method and converts the analysis results into actionable insights. Ignoring this step will make the entire analysis lose practical significance and fail to effectively reduce the circuit failure probability.

[0041] The above technical solutions provide a systematic solution for microbubble risk management in microelectronic circuits, with significant results. Compared with existing single-field and static analysis techniques, it introduces the effects of thermo-electric multi-physics coupling and dynamic multi-field coupling, which fits the actual working scenarios of circuits. It can accurately capture the changes and evolution patterns of microbubble positions. Moreover, based on a multi-dimensional hazard assessment system built on stages, locations, application scenarios, and sizes, it avoids "one-size-fits-all" judgments, greatly reduces risk misjudgments, and improves the accuracy and comprehensiveness of analysis. By dividing the microbubble evolution stages, it can identify the trend of transitioning from low-hazard to high-hazard in advance, giving the operation and maintenance team an intervention window. Combined with differentiated response measures in the risk report, it can avoid sudden failures and reduce over-maintenance, achieving early risk prediction and precise intervention. At the same time, the data such as the initial microbubble distribution and coupling effects in the report can guide circuit design optimization and production process improvement, reducing the microbubble defect rate from the source, extending equipment life, improving operational stability, and reducing equipment maintenance and downtime frequency. It is especially suitable for high reliability requirements in fields such as aerospace and automotive electronics.

[0042] In some embodiments, the electronic device information set includes device operating temperature data, device operating current data, and multilayer circuit board layered structure characteristics. Based on the device operating temperature data and combined with the multilayer circuit board layered structure characteristics, the microbubble position displacement trend caused by the difference in material thermal expansion under thermal load is analyzed to obtain the thermally induced displacement component. Based on the device operating current data and combined with the multilayer circuit board layered structure characteristics, the microbubble position displacement trend caused by the uneven current distribution under electric field is analyzed to obtain the electro-induced displacement component. Based on the thermally induced displacement component and combined with the electro-induced displacement component, the interactive influence and dynamic superposition process of microbubble position displacement under the coupling of thermo-electro-physical fields is analyzed to obtain dynamic thermo-electric coupling characteristic information.

[0043] The electronic device information set refers to the fundamental data collection used to analyze the positional displacement of microbubbles within multilayer circuit boards. Device operating temperature data is key data reflecting the thermal load state of the device within the electronic device information set. Device operating current data is key data reflecting the effect of the electric field on the device within the electronic device information set. The layered structural characteristics of the multilayer circuit board are fundamental data reflecting the physical structure of the circuit board within the electronic device information set. Thermoinduced displacement component refers to parameters related to the positional displacement of microbubbles caused by differences in material thermal expansion under thermal load on the multilayer circuit board. Electroinduced displacement component refers to parameters related to the positional displacement of microbubbles caused by uneven current distribution under an electric field on the multilayer circuit board. Dynamic thermoelectric coupling characteristic information refers to information that characterizes the final overall motion trend of microbubbles by combining the thermoinduced and electroinduced displacement components and considering the interaction of thermo-electric physical fields.

[0044] Specifically, in the field of microelectronic circuits, analyzing the dynamic thermo-electric coupling characteristics of multilayer circuit boards is crucial for connecting "acquiring electronic device information sets" with "analyzing the evolution stages of microbubbles." It overcomes the limitations of single-physics-field analysis, avoids misjudgments of offset and direction, clarifies the core components of the electronic device information set to provide complete data support for offset analysis, considers the thermo-electric interaction to ensure the accuracy of coupling characteristics, and lays the foundation for subsequent evolution stage analysis and risk assessment, avoiding circuit failure risks due to inaccurate data. This step addresses these issues through the following methods: First, extract device operating temperature data (such as the thermal expansion coefficients of each substrate layer) and multilayer circuit board layer structure characteristics (such as interlayer bonding strength) from the electronic device information set. Calculate the differences in material expansion and deformation under thermal load through thermodynamic analysis to obtain the interlayer deformation mismatch, then deduce the interface shear stress and thermal resistance distribution, and finally determine the thermally induced offset components, including the magnitude of the thermally induced driving force and the offset. First, the direction of displacement is shifted. Second, the operating current data of the electronic devices (such as the resistivity of each substrate layer) and the layered structure characteristics of the multilayer circuit board (such as the width of the conductive lines) are extracted from the electronic device information set. The non-uniformity of the current distribution is calculated through electromagnetic analysis, considering the skin effect and edge effect, to obtain the local current density distribution and gradient electric field distribution, and then the electro-induced displacement component, including the magnitude and direction of dielectric force, is determined. Then, the coupling effect of thermo-electric physical fields is analyzed by combining the thermo-induced displacement component and the electro-induced displacement component. For example, the modulation effect of temperature change on material resistivity (such as the increase in resistivity due to temperature rise) and the additional temperature rise caused by current distribution (such as local heating in the current-dense area) are analyzed. The displacement components are mutually corrected, and the initial coupling displacement trend is calculated by vector synthesis. Finally, the time-varying motion trajectory of microbubbles in the coupled field is iteratively simulated, considering the directional cooperative or antagonistic relationship, and the dynamic thermo-electric coupling characteristic information is output to characterize the comprehensive motion trend of microbubbles.

[0045] The above technical solutions improve the accuracy of dynamic thermoelectric coupling characteristic information, avoid errors caused by a single physical field or ignoring interactions, ensure the reliability of circuit risk assessment, provide accurate data for evolution stage analysis, enable risk reports to accurately identify hidden dangers, enhance the service life and stability of microelectronic circuits, assist in preventive maintenance, reduce the adverse effects of microbubbles on circuits, and reduce maintenance costs and failure probability.

[0046] In some embodiments, the device operating temperature data includes the thermal conductivity and thermal expansion coefficient of each substrate layer; the multilayer circuit board layer structure characteristics include interlayer bonding strength, interlayer thermal resistance, layer thickness, conductive line width, conductive line spacing, and dielectric layer thickness; based on the thermal expansion coefficient of each substrate layer and the thickness of each layer, the difference in thermal expansion deformation of adjacent material layers under thermal load is analyzed to obtain the interlayer deformation mismatch; based on the interlayer deformation mismatch, combined with the interlayer bonding strength and interlayer thermal resistance, the interfacial shear stress and thermal resistance distribution caused by the interlayer deformation mismatch under interlayer constraints are analyzed to obtain the interfacial stress-thermal resistance coupling state; based on the interfacial stress-thermal resistance coupling state, the magnitude of the thermally induced driving force and the direction of thermally induced positional displacement of the microbubble in the thermo-mechanical environment are analyzed, and the magnitude of the thermally induced driving force and the direction of thermally induced positional displacement are integrated to obtain the thermally induced displacement component.

[0047] Device operating temperature data can refer to a set of parameters reflecting the thermal properties of each substrate layer during the operation of an electronic device. The thermal conductivity of each substrate layer can be a physical quantity characterizing the heat conduction capability of different substrate layers in a multilayer circuit board. The coefficient of thermal expansion of each substrate layer can be a parameter describing the degree of dimensional expansion or contraction of each substrate layer in a multilayer circuit board as temperature changes. The layered structure characteristics of a multilayer circuit board can be a comprehensive set reflecting the physical properties and geometric parameters of its layered structure. Interlayer bonding strength can be a mechanical indicator measuring the degree of bonding between adjacent layers in a multilayer circuit board. Interlayer thermal resistance can be a parameter characterizing the ability of adjacent layers in a multilayer circuit board to impede heat transfer. Layer thickness can be the vertical dimension of each substrate, conductive layer, or dielectric layer in a multilayer circuit board. Conductive trace width can be the lateral dimension of the conductive copper foil trace in a multilayer circuit board. Conductive trace spacing can be the minimum distance between two adjacent conductive traces. Dielectric layer thickness can be the thickness of the insulating medium used to isolate different conductive layers in a multilayer circuit board. Thermal load can be the heat input borne by the multilayer circuit board due to the heat generated by the electronic devices during operation. Interlayer deformation mismatch can be the difference in deformation between two adjacent layers of a multilayer circuit board due to their different coefficients of thermal expansion under thermal load. Interface stress-thermal resistance coupling state can be the combined state of shear stress and interlayer thermal resistance caused by deformation mismatch between layers of a multilayer circuit board. The magnitude of the thermally induced driving force can be a quantified value of the force that propels microbubbles to move in a thermo-mechanical environment. The direction of thermally induced positional shift can be the possible direction of movement of microbubbles under the action of the thermally induced driving force. The thermally induced offset component can be the quantified result of the microbubble positional shift caused by thermal load.

[0048] Specifically, in the intelligent information processing of microelectronic circuits, accurately analyzing the motion law of microbubbles is a core prerequisite for evaluating circuit reliability and preventing faults. Thermal load, as a critical environmental factor that cannot be avoided in the operation of microelectronic circuits, is particularly important for analyzing its impact on microbubble positional displacement. This step addresses the above issues using the following method: based on the thermal expansion coefficients of each substrate layer contained in the device operating temperature data (e.g., the thermal expansion coefficient of FR-4 substrate is 15 × 10⁻⁶). -6 / K, the coefficient of thermal expansion of the copper conductive layer is 17×10. -6 / K, the coefficient of thermal expansion of the ceramic filler layer is 8×10. -6 / K), combined with the layer thicknesses of each layer in the multilayer circuit board's layered structure (e.g., the FR-4 substrate layer is 0.2mm thick, the copper conductive layer is 0.035mm thick, and the ceramic filler layer is 0.15mm thick), the differences in thermal expansion deformation of adjacent material layers under thermal loads (e.g., the thermal load generated by the CPU chip operating on the circuit board is 12W, causing the local temperature of the circuit board to rise from 25℃ to 45℃, i.e., the temperature change is 20K) are analyzed—by calculating the expansion of each layer due to temperature changes (e.g., the expansion of the FR-4 substrate layer = 15 × 10). -6 / K×20K×0.2mm=0.00006mm, Expansion of the copper conductive layer=17×10 -6 / K×20K×0.035mm=0.0000119mm, Expansion of ceramic filler layer=8×10 -6 / K×20K×0.15mm=0.000024mm), the interlayer deformation mismatch between two adjacent layers is obtained; based on the obtained interlayer deformation mismatch, combined with the interlayer bonding strength (e.g., the interlayer bonding strength of this circuit board is experimentally measured to be 22MPa) and interlayer thermal resistance (e.g., the interlayer thermal resistance is measured to be 0.9K / W by a thermal resistance tester), the interface shear stress and thermal resistance distribution caused by the interlayer deformation mismatch under interlayer constraints are analyzed—because the interlayer bonding strength restricts the free deformation of adjacent layers, deformation mismatch will generate shear stress at the interface (e.g., the shear stress at the interface between the FR-4 substrate layer and the copper conductive layer is calculated to be 11M). The shear stress at the interface between the FR-4 substrate layer and the ceramic filler layer is 9 MPa. Simultaneously, deformation may cause slight changes in the interlayer contact state (e.g., localized areas become more tightly connected due to stress compression), thereby altering the interlayer thermal resistance distribution (e.g., the local thermal resistance at the interface between the FR-4 substrate layer and the copper conductive layer drops to 0.8 K / W, while the edge region's thermal resistance remains at 0.9 K / W). This yields the interface stress-thermal resistance coupling state. Based on this interface stress-thermal resistance coupling state, the magnitude of the thermally induced driving force experienced by the microbubble in the thermo-mechanical environment is analyzed (e.g., based on the interface shear stress distribution and heat flow direction, the magnitude of the thermally induced driving force experienced by a 4 μm diameter microbubble is calculated to be 6 × 10⁻⁶).-6 N) and the thermally induced position offset direction (e.g., based on the interfacial stress gradient and the trend of heat flow from the chip area to the heat dissipation hole area, the thermally induced position offset direction of the microbubble is determined to be along the interlayer interface towards the heat dissipation hole area), and finally, the magnitude of the thermally induced driving force and the thermally induced position offset direction are integrated to obtain the thermally induced offset component (i.e., the thermally induced offset component of the microbubble is "with a 6×10 -6 The thermally driven force of N deflects along the interlayer interface toward the heat dissipation hole area of ​​the circuit board.

[0049] The above technical solution comprehensively incorporates device operating temperature data and the layered structure characteristics of multilayer circuit boards, and clarifies the sources of each parameter, avoiding analytical biases caused by missing or simplified parameters. This ensures accurate calculation of the thermally induced offset component, providing reliable basic data for subsequent acquisition of dynamic thermoelectric coupling characteristic information. Furthermore, specific parameter examples visualize the analysis process, improving the method's operability and reproducibility, facilitating standardized promotion in the microelectronics circuit field. Accurate thermally induced offset components can clearly define the movement trend under microbubble thermal loads, providing targeted basis for circuit reliability optimization and reducing potential microbubble hazards. It also supports the scientific validity of subsequent thermoelectric coupling analysis and microbubble risk assessment, ensuring accurate judgment of evolution stages and output of risk reports, helping to avoid circuit failures in advance and reducing after-sales and recall costs.

[0050] In some embodiments, the device operating current data includes the resistivity and dielectric constant of each substrate layer; based on the resistivity of each substrate layer, combined with the conductive line width and conductive line spacing, the skin effect and edge effect generated when current flows in the multilayer circuit board are analyzed to obtain the local current density distribution; based on the local current density distribution, combined with the dielectric layer thickness and the dielectric constant of each substrate layer, the non-uniform electric field intensity distribution caused by the local current density distribution is analyzed to obtain the gradient electric field distribution; based on the gradient electric field distribution, the magnitude of the dielectric force and the direction of electroinduced position displacement of the microbubble in the gradient electric field are analyzed, and the magnitude of the dielectric force and the direction of electroinduced position displacement are integrated to obtain the electroinduced displacement component.

[0051] Device operating current data is an important component of electronic device information sets, used to characterize the electrical properties of each substrate layer of a multilayer circuit board under operating conditions. The resistivity of each substrate layer can be a sub-parameter belonging to the device operating current data, referring to the ability of different substrate layers in a multilayer circuit board to impede current. The dielectric constant of each substrate layer can be a sub-parameter belonging to the device operating current data, referring to the ability of different substrate layers in a multilayer circuit board to store charge under the influence of an electric field. The layered structure characteristics of a multilayer circuit board can be a set of parameters describing the physical structure of the multilayer circuit board. The conductor width can be a sub-parameter belonging to the layered structure characteristics of a multilayer circuit board, referring to the lateral dimension of the conductor in the plane of the multilayer circuit board. The conductor spacing can be a sub-parameter belonging to the layered structure characteristics of a multilayer circuit board, referring to the shortest distance between two adjacent conductors in the multilayer circuit board. The dielectric layer thickness can be a sub-parameter belonging to the layered structure characteristics of a multilayer circuit board, referring to the thickness of the insulating dielectric material used to isolate different conductive layers in the multilayer circuit board. The skin effect can refer to the physical phenomenon that when alternating current flows in a conductor, the current tends to concentrate in a thin layer on the surface of the conductor. Edge effect refers to the physical phenomenon where, when current flows through a conductive path, the current density at the edge of the path is higher than that at the center due to the uneven distribution of the electric field. Local current density distribution refers to the numerical distribution of current density at different spatial locations when current flows through the conductive lines and substrate of a multilayer circuit board. Gradient electric field distribution refers to the gradient variation of electric field intensity along spatial locations in a multilayer circuit board. Dielectrophoretic force magnitude refers to the magnitude of the electric force experienced by a microbubble in a gradient electric field due to the difference in dielectric properties between its own and the surrounding medium. Electroinduced position shift direction refers to the spatial direction of the positional shift of a microbubble under the action of dielectric force. Electroinduced shift component refers to a comprehensive characteristic parameter representing the positional shift of a microbubble caused solely by the electric field.

[0052] Specifically, the positional displacement of microbubbles in multilayer circuit boards is a key factor affecting circuit reliability and performance. Uneven current distribution can lead to local overheating and electric field concentration, thereby accelerating the movement and aggregation of microbubbles. Without analyzing the electroinduced displacement component, it is impossible to fully predict the behavior of microbubbles, which may cause microbubbles to migrate to critical areas, triggering short circuits, open circuits or structural failures, and reducing circuit life and reliability. This step addresses the aforementioned issues using the following method: First, the resistivity (e.g., 1.68 × 10⁻⁸ Ω·m) and dielectric constant (e.g., 4.5) of each substrate layer are measured using the four-probe method or extracted from circuit simulation software (such as ANSYS Maxwell) as input for the device's operating current data. Second, the layered structure characteristics of the multilayer circuit board are obtained from the circuit board design (such as Gerber), including the conductor width (e.g., 0.1 mm), conductor spacing (e.g., 0.05 mm), and dielectric layer thickness (e.g., 0.2 mm). Then, using electromagnetic field simulation tools and based on the finite element method, the current flow process in the multilayer circuit board is simulated, analyzing the skin effect (i.e., the phenomenon of high-frequency current concentration on the conductor surface) and edge effect (i.e., the phenomenon of current concentration at the conductor edge), and calculating the local current density distribution (e.g., reaching 10⁶ A / m in some areas). 2 Next, combining the dielectric layer thickness and the dielectric constant of each substrate layer, the non-uniform electric field intensity distribution caused by the local current density distribution is analyzed by solving the Poisson equation, thereby obtaining the gradient electric field distribution (e.g., an electric field intensity gradient of 10^5 V / m). 2 Finally, based on the dielectrophoresis theory formula, the magnitude of the dielectrophoretic force exerted on the microbubble in the gradient electric field (e.g., 1×10^{-9}N) is calculated and the direction of electroinduced position shift (e.g., towards the direction of increasing electric field strength) is determined. Through vector integration processing, the electroinduced shift component is output.

[0053] The above technical solution clarifies the specific parameter definitions and data sources for device operating current data and the layered structure characteristics of multilayer circuit boards, ensuring the reliability and accuracy of the data source during the electroinduced offset component analysis and avoiding analysis errors caused by ambiguous parameter definitions or unclear data sources. By analyzing the skin effect, edge effect, local current density distribution, gradient electric field distribution, and dielectric force step by step, the complete physical mechanism of microbubble position displacement under the action of electric field is clearly outlined, making the logical chain of "how uneven current distribution leads to microbubble displacement" clearer and effectively avoiding the bias in judging the microbubble movement trend caused by ignoring electrical factors or simplifying the physical process. The final electroinduced offset component can accurately reflect the microbubble position displacement characteristics caused solely by the action of electric field, providing independent and accurate "electroinduced" data support for subsequent thermo-electric physical field coupling analysis. This ensures that the dynamic thermo-electric coupling characteristic information can fully integrate the influence of both thermoinduced and electroinduced factors, thereby improving the accuracy of subsequent microbubble evolution stage analysis and potential hazard assessment.

[0054] In some embodiments, based on the thermally induced offset component, the modulation effect of temperature change on the resistivity of the material is analyzed, and then the electro-induced offset component is corrected according to the modulated resistivity to obtain a first corrected electro-induced offset component; based on the electro-induced offset component, the additional temperature rise caused by the current distribution is analyzed, and the thermally induced offset component is corrected according to the additional temperature rise to obtain a first corrected thermally induced offset component; the first corrected thermally induced offset component and the first corrected electro-induced offset component are vector synthesized to obtain an initial coupling offset trend; the new local temperature field and electric field changes caused by the initial coupling offset trend are iteratively analyzed, and the feedback path is repeated to simulate the time-varying motion trajectory of the microbubble under the coupling effect of thermo-electrophysical fields to obtain a corrected thermo-electric coupling induced offset component; based on the corrected thermo-electric coupling induced offset component, dynamic thermo-electric coupling characteristic information for characterizing the final comprehensive motion trend of the microbubble is obtained.

[0055] The modulation effect of temperature change on material resistivity refers to the phenomenon that the resistivity of the substrate in a multilayer circuit board changes with temperature. Modulated resistivity refers to the actual resistivity value of each layer of the substrate in the multilayer circuit board after being affected by temperature changes. Additional temperature rise refers to the additional temperature rise caused by uneven current distribution in the multilayer circuit board. The first corrected electro-induced offset component refers to the result obtained by adjusting the initial electro-induced offset component using the modulated resistivity. The first corrected thermally induced offset component refers to the result obtained by adjusting the initial thermally induced offset component using the additional temperature rise. Vector synthesis refers to the process of superimposing the first corrected thermally induced offset component and the first corrected electro-induced offset component according to their respective magnitudes and directions. The initial coupled offset trend refers to the initial positional offset trend of the microbubble after the first correction and synthesis of the thermal-electric offset components. Iterative analysis can be a method of repeating the analysis process of "offset trend → field change → corrected offset" to approximate the actual motion state of the microbubble. Local temperature and electric field changes refer to the changes in the temperature and electric field distribution of the surrounding multilayer circuit board area after the microbubble moves according to the initial coupled offset trend. The feedback path can be a process of feeding back the results of "local temperature field and electric field changes" to the "corrected offset component" step. This involves using new field change data to re-correct the first corrected thermally induced offset component and the first corrected electrically induced offset component, forming a closed-loop process of "correction → synthesis → field change → re-correction." The time-varying motion trajectory can be a continuous record of the microbubble's position at different time points obtained through multiple iterative analyses. The corrected thermo-electric coupling-induced offset component refers to the microbubble position offset component that accurately reflects the thermo-electric coupling effect after multiple iterative corrections and synthesis. Dynamic thermo-electric coupling characteristic information can be used to characterize the final comprehensive motion trend of the microbubble under the coupling effect of thermo-electric physical fields.

[0056] Specifically, the presence of microbubbles can trigger circuit faults, such as short circuits or structural failures. However, traditional methods often treat the effects of heat or electricity separately, neglecting the coupling effect, leading to inaccurate predictions. For example, temperature changes modulate the resistivity of materials, thus affecting the electric field distribution, while the current distribution generates additional temperature rise, further altering the thermal field. This interaction causes the microbubble motion to exhibit nonlinear dynamic characteristics. This step addresses the above problems through the following method: First, establishing a multi-physics coupled numerical simulation model is the core of the process. A three-dimensional model containing the precise geometry of a multilayer circuit board (such as the thickness of each layer and the circuit layout) is constructed using finite element analysis (FEA) software (e.g., ANSYS). In this model, material properties are defined, including the resistivity function of each substrate layer as a function of temperature. In this model, α represents the temperature coefficient, coefficient of thermal expansion (CTE), thermal conductivity, and dielectric constant. Based on this model, the temperature field distribution data corresponding to the aforementioned thermally induced offset component is loaded into the electrical module of the model as input conditions. The software automatically recalculates the resistivity of each grid cell based on its temperature value, thus obtaining a non-uniform resistivity distribution field modulated by the temperature field. Subsequently, the current distribution and electric field distribution are resolved on this corrected resistivity field, and the dielectric force is recalculated based on the new electric field distribution, thereby outputting the first corrected electro-induced offset component. The current density distribution data corresponding to the aforementioned electro-induced offset component is loaded into the thermal module of the model as input conditions. By solving the Joule heating equation, the additional temperature rise field generated by the non-uniform current distribution is calculated. This additional temperature rise field is superimposed on the initial temperature field to obtain a corrected and more accurate comprehensive temperature field. Thermal expansion and thermal stress are re-solved in this combined temperature field to output the first corrected thermally induced offset component. Subsequently, the vector synthesis process is completed in the post-processing module of the simulation software. The software extracts the vectorized data (magnitude and direction of force) of the two corrected components and automatically calculates the synthesized vector based on their directional angle (θ), thereby obtaining the initial coupling offset trend. The most crucial part is the iteration and feedback process, which feeds back the new microbubble position information predicted by the above initial coupling offset trend into the geometric configuration of the simulation model to update the microbubble coordinates. Then, the thermal-electric coupling is automatically re-run. The calculation process is as follows: solve for the new temperature field → update the resistivity → solve for the new electric field → calculate the new thermodynamic and electrical forces. This process is iterated in a very short time step (e.g., 0.1 seconds) to simulate the continuous motion of microbubbles in the coupled field until the solution converges (i.e., the displacement difference between two iterations is less than a set threshold, such as 1e-6 meters). A high-fidelity time-varying motion trajectory and the corrected thermo-electric coupling-induced displacement component are output. Finally, the dynamic thermo-electric coupling characteristic information is extracted from this trajectory data, including the instantaneous velocity, acceleration, and final generalized motion direction of the microbubbles.

[0057] The above technical solution analyzes the interactive influence and dynamic superposition process of microbubble position displacement under the coupling of thermo-electric physical fields. Firstly, it effectively solves the problem of neglecting the mutual modulation of thermally and electrically induced displacement components when calculating them separately. This avoids deviations in displacement trend judgment caused by factors such as the influence of temperature on resistivity and the additional temperature rise caused by current. The obtained dynamic thermo-electric coupling characteristic information can realistically and accurately reflect the motion state of microbubbles in actual thermo-electric coupling environments, providing high-quality basic data for subsequent analysis. Secondly, through iterative analysis and feedback path design, it achieves accurate simulation of the time-varying motion trajectory of microbubbles. This captures the dynamic changes of the surrounding field environment during microbubble motion and their reaction to the microbubble motion, thereby accurately identifying the laws and trends of microbubble motion. This provides a reliable basis for subsequent judgment of whether microbubbles are in the performance latency period, damage accumulation period, or functional failure period, avoiding misjudgments of evolution stages due to inaccurate data.

[0058] In some embodiments, based on the thermally induced position shift direction and combined with the electro-induced position shift direction, the synergistic or antagonistic relationship between the thermal and electro-induced effects in terms of direction is analyzed to obtain the thermo-electric effect direction relationship; if the thermally induced position shift direction and the electro-induced position shift direction tend to be in the same direction, the magnitude of the thermally induced driving force and the magnitude of the dielectric force are superimposed, and the same direction is taken as the synthesis direction to obtain the enhanced synthesis shift direction and the superimposed force; if the thermally induced position shift direction and the electro-induced position shift direction tend to be in opposite directions, the magnitude of the thermally induced driving force and the magnitude of the dielectric force are canceled out, and the direction corresponding to the remaining net force is taken as the synthesis direction to obtain the weakened synthesis shift direction and the canceled force; integrating the enhanced synthesis shift direction, the superimposed force, the weakened synthesis shift direction, and the canceled force, the initial coupling shift trend is obtained.

[0059] The thermo-electric interaction direction can be the relationship between the thermo-induced and electro-induced positional shift directions. The enhanced composite shift direction can be the final positional shift direction of the microbubble after their superposition when the thermo-induced and electro-induced positional shift directions tend to be in the same direction; it is consistent with the thermo-induced and electro-induced shift directions. The superimposed force can be the combined force on the microbubble obtained by superimposing the magnitude of the thermo-induced driving force and the magnitude of the dielectrophoretic force when the thermo-induced and electro-induced positional shift directions tend to be in the same direction. The weakening composite shift direction can be the positional shift direction of the microbubble corresponding to the net force remaining after the thermo-induced and electro-induced positional shift directions cancel each other out when the thermo-induced and electro-induced positional shift directions tend to be in opposite directions; it is consistent with the shift direction corresponding to the larger force. The canceled force can be the net force on the microbubble obtained after canceling out the magnitude of the thermo-induced driving force and the magnitude of the dielectrophoretic force when the thermo-induced and electro-induced positional shift directions tend to be in opposite directions. The initial coupling offset trend can be obtained by integrating the enhanced composite offset direction, the superimposed force, the weakened composite offset direction, and the canceled force, which can initially reflect the comprehensive motion trend of microbubbles under the coupling effect of thermo-electrophysical fields.

[0060] Specifically, in the intelligent information processing of microelectronic circuits, the initial coupling offset trend is crucial for connecting the first corrected thermal / electro-induced offset component with subsequent iterative analysis. Thermo-induced and electro-induced effects on the microbubble offset direction may be synergistic or opposite; directly superimposing them without analyzing the direction will severely misjudge the combined force and offset direction. This ensures the accuracy of the initial coupling offset trend, providing a reliable foundation for subsequent iteration of the microbubble's time-varying motion trajectory, determination of evolution stages, and risk reporting, avoiding the failure of circuit fault warnings due to data deviations. This step addresses the above problem through the following method: After obtaining the first corrected thermal offset component and the first corrected electro-induced offset component, the precise determination of the thermal position offset direction is first carried out: A high-resolution infrared thermal imager (such as FLIRT1040) is used to perform dynamic thermal imaging scanning of the multilayer circuit board, combined with the layered structural characteristics of the multilayer circuit board (such as the thickness of each layer and the type of substrate, for example, the first layer is a 0.2mm thick epoxy resin substrate, and the second layer is a 0.1mm thick copper foil wire). In the circuit layer, a laser displacement sensor (accuracy up to ±0.1μm) is used to track the displacement trajectory of microbubbles under thermal load. By extracting the principal direction vector of the trajectory data, the direction of thermally induced positional offset is determined (e.g., upward along the vertical direction of the circuit board, specifically from the first epoxy resin substrate to the second copper foil circuit layer). Simultaneously, the thermal stress simulation software (such as ANSYS) is used with its thermo-mechanical coupling module, inputting the thermal expansion coefficients of each substrate layer (e.g., 60ppm / ℃ for epoxy resin, 17ppm / ℃ for copper) and interlayer bonding strength (e.g., 25MPa) to verify the accuracy of the thermally induced offset direction and ensure consistency with the actual physical phenomenon. Subsequently... The direction of electroinduced positional offset was determined using the operating current data of the base device (e.g., resistivity of each substrate layer, 10^14 Ω·cm for epoxy resin and 1.7 × 10^-8 Ω·cm for copper) and the layered structure characteristics of the multilayer circuit board (e.g., conductive line width 0.1 mm, spacing 0.08 mm, dielectric layer thickness 0.15 mm). A three-dimensional electric field model of the multilayer circuit board was constructed using electric field simulation software (e.g., ANSYS Maxwell). Current excitation parameters (e.g., operating current 1 A) were set to simulate the skin effect and edge effect during current flow, obtaining a local current density distribution cloud map. The electric field was then measured using a micro-current sensor (range 10^-9 A to 1 A). After correcting the simulation model, the current at key nodes of the circuit board was analyzed, and the gradient electric field distribution characteristics were analyzed. Then, the force trajectory of the microbubble in the gradient electric field was simulated using the dielectric force calculation plugin in the software to determine the direction of electroinduced position displacement (e.g., also vertically upward). The actual displacement of the microbubble after applying a constant electric field was observed using an optical microscope (500x magnification) mounted on a micromanipulation robot to verify the reliability of the direction of electroinduced position displacement. Then, the relationship between the thermo-electric interaction direction was determined: the thermoinduced position displacement direction and the electroinduced position displacement direction determined above were converted into three-dimensional spatial vectors (e.g., the thermoinduced direction vector is (0,0,1) and the electroinduced direction vector is (0,0,0).98)) The angle between the two is calculated using the direction cosine formula (e.g., if the angle is 11.5°, less than 30° is considered to be tending towards the same direction), thus clarifying that the direction relationship of the thermal-electric interaction is synergistic; if the calculated angle is 165° (greater than 150° is considered to be tending towards the opposite direction), then it is determined to be an antagonistic relationship. The entire calculation process is implemented through the vector operation toolbox of MATLAB to ensure the quantitative accuracy of the direction relationship judgment. Then, the superposition or cancellation calculation of the forces is performed: for the magnitude of the thermally induced driving force, the force value calculation module of the thermal stress simulation software is used, based on the interface stress-thermal resistance coupling state (e.g., interface shear stress 5MPa, interlayer thermal resistance 0.02K·m). 2 The output thermal driving force is calculated as / W (e.g., 6 × 10⁻⁶ N). For the dielectric force, the electric field force calculation function of the electric field simulation software is used. Based on the gradient electric field strength (e.g., 10⁵ V / m) and the dielectric constant of the microbubble (e.g., 1.05, relative to air), the dielectric force is calculated (e.g., 4 × 10⁻⁶ N). If the directions are the same, vector synthesis software (e.g., Origin's vector analysis tool) is used to vector-superimpose the two force values ​​to obtain the superimposed force (10 × 10⁻⁶ N), and the same direction is used as the reinforcement synthesis offset direction (vertically upward). If the directions are opposite, the force difference is calculated using the same software to obtain the canceled force (e.g., 6 × 10⁻⁶ N). (^-6N-4×10^-6N=2×10^-6N), taking the direction corresponding to the larger force (vertically upward) as the weakening composite offset direction, and finally integrating all results: importing the data such as the strengthening / weakening composite offset direction and the superimposed / cancelled force into the data integration platform (such as the LabVIEW data processing module), generating a structured data report containing direction vectors, force magnitudes, and directional relationship types. This report is the initial coupling offset trend, which can be directly used as input data for subsequent iterative analysis of the time-varying motion trajectory of microbubbles. The whole process combines multi-device collaboration and software simulation to ensure that each step of the operation is supported by clear technical means, and the results are highly matched with the actual physical characteristics of the multilayer circuit board.

[0061] By scientifically analyzing the directional relationship between thermo-induced and electro-induced effects and conducting targeted calculations of force superposition or cancellation, the actual impact of thermo-electric coupling on microbubble displacement can be accurately identified. This effectively avoids misjudgment of microbubble displacement trends caused by ignoring directional differences, ensuring a high degree of consistency between the initial coupling displacement trend and the actual force situation of the microbubble. From a data foundation perspective, it provides accurate starting data for subsequent iterative analysis of "new local temperature and electric field changes caused by the initial coupling displacement trend," making the "time-varying motion trajectory of microbubbles" obtained from subsequent simulations closer to reality. This, in turn, ensures the authenticity and effectiveness of the "corrected thermo-electric coupling-induced displacement component" and "dynamic thermo-electric coupling characteristic information." From an application value perspective, an accurate initial coupling displacement trend can provide reliable support for subsequent microbubble evolution stage analysis, avoiding risk assessment deviations caused by misjudgments in the evolution stage, and ultimately making the output microbubble risk report more valuable.

[0062] In some embodiments, based on the corrected thermo-electric coupling-induced offset component, the microbubble movement direction and microbubble position information are analyzed to determine whether the microbubble is in the initial stable stage before affecting circuit performance, thus obtaining the performance latency determination result. If it is not in the performance latency period, the migration rate and aggregation tendency of the microbubble under thermo-electric coupling are analyzed to determine whether the microbubble has entered the progressive development stage of size expansion and interface peeling, thus obtaining the damage accumulation period determination result. If it is not in the damage accumulation period, the aggregation position of the microbubble is analyzed to determine whether it is in the critical conductive path or interlayer interface, thus determining whether it has triggered the final failure stage of circuit short circuit or structural cracking, thus obtaining the functional failure period determination result. The performance latency determination result, the damage accumulation period determination result, and the functional failure period determination result are integrated to obtain the multi-stage evolution result.

[0063] The microbubble movement direction can be the orientation in which the microbubble points when it moves under thermo-electric coupling. Microbubble position information can be the specific spatial location of the microbubble within the multilayer circuit board. Performance latency can be the initial stable stage before the microbubble affects circuit performance. The performance latency determination result can be a conclusion drawn by analyzing the microbubble movement direction and position information to determine whether the microbubble is in the performance latency period. Migration rate can be the distance the microbubble moves per unit time under thermo-electric coupling. Aggregation tendency can be the probability that a microbubble will collide and merge with other microbubbles or interface defects during migration. Damage accumulation period can be the gradual development stage where the microbubble enters the size expansion and interface delamination stage. The damage accumulation period determination result can be a conclusion drawn by analyzing the microbubble migration rate and aggregation tendency to determine whether the microbubble has entered the damage accumulation period. Aggregation location can be the spatial region where the microbubble finally resides after migration and aggregation. Critical conductive path can be the conductive line in the multilayer circuit board that transmits core electrical signals or high currents. Interlayer interface can be the bonding surface between different substrate layers in the multilayer circuit board. A short circuit can be caused by microbubble aggregation or structural damage, leading to unexpected continuity in normally insulated conductive lines. Structural cracking can occur when microbubbles aggregate at interlayer interfaces, generating peeling forces that cause cracks or delamination at the circuit board's interlayer interfaces. The functional failure period is the final failure stage where microbubbles trigger short circuits or structural cracking; at this point, the circuit board's electrical performance is completely lost or its structure is severely damaged, rendering it unable to function properly. The functional failure period determination can be based on analyzing whether the microbubble aggregation location is at a critical conductive path or interlayer interface to determine if it has triggered a short circuit or structural cracking. The multi-stage evolution result can be a set of conclusions reflecting the complete evolution process of microbubbles, obtained by integrating the performance latency period, damage accumulation period, and functional failure period determination results.

[0064] Specifically, microbubbles are a common source of defects in multilayer circuit boards during the manufacturing and use of microelectronic circuits. However, due to the complexity of thermo-electric multi-physics coupling, the evolution of microbubbles is often difficult to predict. Existing methods usually only focus on static detection or single-physics field analysis, failing to capture the stage-by-stage changes under dynamic coupling. This leads to insufficient early risk warning and may cause sudden circuit failures. This step addresses the above problems through the following method: First, a microbubble dynamic parameter extraction method is used to accurately extract the microbubble movement direction (e.g., a vector parameter pointing horizontally to the right) and microbubble position information (e.g., located in the third dielectric layer, 8mm away from a critical conductive line with a width of 0.1mm, and 2mm away from the interlayer interface) from the dynamic thermo-electric coupling characteristic information (e.g., the time-varying trajectory of the microbubble moving horizontally to the right along the interface between the second and third layers at 0.005mm per second). Then, combined with a preset "circuit performance no-impact judgment standard" (e.g., when the microbubble is located in a non-critical area and the movement rate is less than 0.003mm per second, it is judged as having no impact), the microbubble is judged by spatial position matching and dynamic parameter threshold comparison. Whether the bubble is in the initial stable stage (performance latency) before affecting circuit performance is determined. (For example, if the microbubble is located 10mm outside the critical conductive path, moves at a speed of 0.002mm per second, and does not trigger any performance anomaly threshold, it is determined to be "in the performance latency period"; otherwise, it is determined to be "not in the performance latency period".) If the performance latency determination result is not in the performance latency period, then the microbubble dynamic behavior analysis method is initiated, and the migration rate is calculated based on the time-varying motion trajectory in the dynamic thermoelectric coupling characteristic information (e.g., through continuous 10 minutes of...). The trajectory data yields a velocity of 0.01 mm per second. Simultaneously, a microbubble aggregation risk assessment model is invoked, incorporating the layered structure characteristics of multilayer circuit boards (such as surface tension at interlayer interfaces and flow characteristics of the dielectric layer). This analyzes the probability of microbubbles colliding and merging with other microbubbles (such as three surrounding microbubbles with a diameter of 0.03 mm) during migration (e.g., a merging probability of 70% within one hour). Then, through "size expansion-interface peeling correlation analysis," it is determined whether microbubble aggregation leads to size expansion and exerts a force exceeding a preset threshold (e.g., 1 N / m) on the interlayer interface. 2 The peeling force of the microbubble is used to determine whether the damage accumulation period has begun, thus obtaining a damage accumulation period determination result. If the damage accumulation period determination result is not in the stage of damage accumulation, a microbubble spatial risk positioning method is used. Based on the dynamic thermoelectric coupling characteristic information, the final aggregation position of the microbubble is determined (e.g., at the interface between the second copper foil layer and the third dielectric layer, only 2mm away from the 0.5mm wide power line). Then, through the "aggregation position-critical area matching algorithm", the spatial coordinates of this position are compared with the preset critical conductive path (e.g., the 0.1mm wide line transmitting the core control signal) and the interlayer interface (e.g., the bonding surface between the second and third layers) to analyze whether it will cause the insulation resistance of the conductive path to drop from 10 ohms. 10 Ω drops to 105 The risk of short circuit in Ω or structural cracking with a 0.3mm crack at the interlayer interface is considered. Combined with the "functional failure judgment matrix" (e.g., abnormal electrical performance and structural damage are considered failure), it is determined whether the functional failure period has been entered, and the functional failure period judgment result is obtained. Finally, through a multi-stage result integration algorithm, the performance latency judgment result (e.g., "not in the performance latency period"), the damage accumulation period judgment result (e.g., "in the damage accumulation period"), and the functional failure period judgment result (e.g., "not in the functional failure period") are logically correlated and consistency checked to ensure that there are no contradictions in the judgments of each stage. Then, a multi-stage evolution result that fully reflects the microbubble evolution process is output.

[0065] By accurately dividing the evolution stages of microbubbles through the above technical solutions, the problem of "misjudging risk" in existing assessment methods is effectively solved. This avoids over-processing of low-risk microbubbles in the performance latency stage, reducing unnecessary circuit board replacement costs, and also prevents the omission of high-risk microbubbles in the damage accumulation stage or functional failure stage, reducing the probability of sudden circuit failures. This significantly improves the operational safety and reliability of microelectronic circuits in key areas and provides a clear basis for differentiated maintenance strategies. "Continuous monitoring" of microbubbles in the performance latency stage, "local repair" of microbubbles in the damage accumulation stage, and "timely replacement" of microbubbles in the functional failure stage make maintenance work more targeted, improve maintenance efficiency, and significantly reduce the waste of maintenance resources. This embodiment makes stage judgment based on the dynamic parameters of microbubbles. Compared with traditional static parameter judgment, the multi-stage evolution results obtained are more comprehensive and accurate, providing a solid stage positioning foundation for subsequent assessment of the potential hazard level of microbubbles. This promotes the scientific and practical nature of the entire intelligent information processing method for microelectronic circuits to a new level and can better meet the high requirements for circuit reliability in the automotive, aerospace, and consumer electronics fields.

[0066] In some embodiments, based on the magnitude of the thermally induced driving force and the magnitude of the dielectrophoretic force, the motion acceleration and directional stability of microbubbles in the thermo-electric coupling field are analyzed to obtain microbubble migration behavior characteristics. Based on the microbubble migration behavior characteristics, combined with the layered structure characteristics of multilayer circuit boards, the probability of microbubbles colliding and merging with other microbubbles or interface defects during migration is analyzed to obtain microbubble aggregation tendency. Based on the microbubble aggregation tendency, the rate at which the size of microbubbles increases due to the aggregation effect and the magnitude of the peeling force generated by the enlarged microbubbles on the surrounding materials are analyzed to obtain interface peeling risk characteristics. Based on the interface peeling risk characteristics, it is determined whether the microbubbles have entered the damage development stage characterized by size expansion and interface peeling, and the damage accumulation period determination result is output.

[0067] Microbubble migration rate can be defined as the distance a microbubble travels per unit time under thermo-electric coupling. Microbubble aggregation tendency refers to the probability that a microbubble will collide and merge with other microbubbles or interface defects during migration. Microbubble size enlargement refers to the phenomenon where a microbubble's diameter or volume increases due to collisions and mergers with other microbubbles. Interface peeling refers to the failure and separation of interlayer bonding at the interfaces of multilayer circuit boards due to the forces generated by microbubbles. The progressive development stage can be the intermediate stage in the transition from the performance latency period to the functional failure period of microbubbles, characterized primarily by microbubble size enlargement and interface peeling. The damage accumulation period determination result can be a conclusion drawn from analyzing the risks of microbubble migration, aggregation, and interface peeling to determine whether a microbubble has entered the progressive development stage. Microbubble motion acceleration can be the change in velocity of a microbubble per unit time under the combined action of thermo-driven force and dielectric force. Microbubble directional stability refers to the stability of the motion direction during microbubble migration. Microbubble migration behavior characteristics can refer to the overall motion law that comprehensively reflects the microbubble's motion acceleration, directional stability, and migration rate. Interface defects can refer to micro-cracks, voids, or other defects present at the interlayer interfaces of multilayer circuit boards. Collision-merging probability refers to the likelihood that a microbubble will collide and merge with other microbubbles or interface defects along its migration path. Microbubble size increase rate refers to the amount of size increase per unit time due to aggregation effects. Peel force magnitude refers to the quantitative value of the force exerted by the enlarged microbubble on the surrounding material of the multilayer circuit board, leading to interface peeling. Interface peeling risk characteristics can be a comprehensive set of features reflecting the probability and extent of interface peeling caused by microbubbles.

[0068] Specifically, due to the continuous high-density and multi-layered development of microelectronic circuits, microbubbles are difficult to completely avoid during the manufacturing process. Their dynamic evolution behavior under the coupling of thermo-electric multi-physics fields directly threatens the structural integrity and electrical performance of the circuit. Relying solely on traditional single-field analysis or macroscopic detection methods cannot accurately capture the migration, aggregation, and interface damage processes of microbubbles at the microscale, leading to delayed early warning and misjudgment of potential faults. By introducing coupled analysis of thermally driven forces and electro-dielectric forces, the dynamic migration behavior of microbubbles can be quantitatively characterized. Furthermore, combined with the characteristics of layered structures, the probability of collision and merging between microbubbles and interaction with interface defects can be assessed, thereby scientifically determining whether they have entered the damage accumulation stage. This step addresses the above problems through the following method: When it is confirmed by performance latency that the microbubble is not in the initial stable stage, firstly, based on the magnitude of the thermally driven force (e.g., 5 × 10^-6 N) and the magnitude of the electro-dielectric force (e.g., 3 × 10^-6 N) acting on the microbubble, analyze its motion acceleration in the thermo-electric coupling field (e.g., 1.8 × 10^-3 m / s²). 2The microbubble migration behavior characteristics are obtained by combining the speed and direction stability (e.g., if the directional deviation does not exceed 6° within 0.8 hours, it is considered directionally stable; if the deviation exceeds 12°, it is considered directionally unstable), thus comprehensively reflecting the speed and direction of microbubble movement. Then, combined with the layered structure characteristics of multilayer circuit boards (e.g., interlayer bonding strength of 18MPa and interlayer thermal resistance of 0.11K·m), the characteristics are further analyzed. 2 The microbubble layer has a thickness of 0.22 mm, a conductive line width of 0.32 mm, a conductive line spacing of 0.55 mm, and a dielectric layer thickness of 0.16 mm. Based on the obtained migration behavior characteristics, the probability of microbubbles colliding and merging with other microbubbles (e.g., microbubbles with a diameter of 10 μm) or interface defects (e.g., interlayer microcracks with a length of 55 μm) during migration is analyzed (e.g., under a certain migration path, due to stable direction and moderate acceleration, the collision and merging probability reaches 58%), thus obtaining the microbubble aggregation tendency, which reflects the possibility of microbubble aggregation. Subsequently, based on this aggregation tendency, the rate at which the microbubble size increases due to the aggregation effect is further analyzed (e.g., when the collision and merging probability is 58%, the diameter increases by 0.16 mm per hour). The magnitude of the peeling force exerted by microbubbles (larger than 4.5 μm) on surrounding materials (e.g., 7 × 10^-6 N) after enlargement (e.g., microbubbles with a diameter increasing from 10 μm to 28 μm) is used to obtain interface peeling risk characteristics that can reflect the possibility and degree of interface damage. Finally, based on the interface peeling risk characteristics, combined with the structural characteristics such as the interlayer bonding strength of the multilayer circuit board (e.g., when the interlayer bonding strength is 18 MPa, if the peeling force exceeds 6 × 10^-6 N and the size increase rate exceeds 3 μm per hour, it is determined that it has entered the damage development stage), it is determined whether the microbubble has entered the damage development stage characterized by size expansion and interface peeling, and finally outputs the damage accumulation period determination result of "entered the damage accumulation period" or "not entered the damage accumulation period".

[0069] By using the above technical solutions, the latent damage stage of microbubbles can be identified in advance. This embodiment shifts fault prevention and control from "post-event remediation" to "pre-event intervention," effectively avoiding sudden failures caused by the accumulation of latent damage. It enables fine-grained analysis of the dynamic evolution behavior of microbubbles in a thermo-electric coupling environment, accurately identifying the key nodes that transition from the performance latency period to the damage accumulation period. This provides a theoretical basis and practical support for early warning and prevention of microbubble risks, and improves the reliability and service life of microelectronic circuits.

[0070] In some embodiments, the final aggregation location region of microbubbles is determined based on time-varying motion trajectories; based on the final aggregation location region of microbubbles, the spatial relationship between the final aggregation location region and key conductive paths in the preset circuit layout design is analyzed to determine whether microbubbles cause conductive path blockage or current leakage, thus obtaining the electrical performance failure risk; based on the final aggregation location region of microbubbles, the spatial relationship between the final aggregation location region and the preset interlayer bonding interface is analyzed to determine whether microbubbles cause interlayer delamination or crack propagation, thus obtaining the structural integrity failure risk; based on the electrical performance failure risk and the structural integrity failure risk, it is determined whether the circuit has entered the failure stage of complete loss of function, and the functional failure period determination result is output.

[0071] The final aggregation location of microbubbles can be the spatial range in which they eventually settle after a period of migration under the coupling of thermo-electrophysical fields. The pre-designed circuit layout can be the layout scheme of circuit lines and electronic components determined by designers during the design phase of microelectronic circuits. Critical conductive paths can be the conductive lines in the pre-designed circuit layout that ensure the realization of the core functions of the microelectronic circuit. Electrical performance failure risk can be caused by an unfavorable spatial relationship between the microbubble aggregation location and the critical conductive path, leading to problems such as blockage or current leakage. The pre-designed interlayer bonding interface can be the bonding surface between different material layers in a multilayer circuit board. Structural integrity failure risk can be caused by an unfavorable spatial relationship between the microbubble aggregation location and the pre-designed interlayer bonding interface. The functional failure period determination result can be a conclusion based on the electrical performance failure risk and the structural integrity failure risk, judging whether microbubbles have caused a complete loss of circuit function.

[0072] Specifically, the migration and aggregation behavior of microbubbles in multilayer circuit boards is one of the key factors leading to circuit performance degradation and even eventual failure. Especially under high temperature and high current density conditions, the thermo-electric coupling effect significantly accelerates the evolution of microbubbles. Without staged identification and risk assessment of this process, it is impossible to achieve early warning and precise intervention for the degradation of circuit reliability. Most existing technologies only analyze microbubble behavior from the perspective of a single physical field (such as pure heat or pure electricity), ignoring the nonlinear interaction effect under multi-field coupling. Therefore, it is difficult to accurately predict the final aggregation position of microbubbles and their actual impact on circuit function. This step solves the above problems through the following method: based on time-varying motion trajectory (This trajectory simulates the movement path of microbubbles over time under the coupling effect of thermo-electrophysical fields. For example, within a monitoring period of 0-20 minutes, microbubbles migrate from their initial position (coordinates X: 6mm, Y: 8mm, Z: 4mm) in the dielectric layer of a multilayer circuit board. Driven by thermal forces (due to differences in thermal expansion between substrate layers) and dielectric forces (due to uneven current distribution), they gradually migrate towards a region near the top layer's critical conductive lines, forming a time-varying path. This determines the final aggregation location of the microbubbles (this region represents the spatial range where the microbubbles ultimately reside, for example, at the position at 20 minutes: X: 6.3mm, Y: 8.15mm, Z: 3.3m).) A cylindrical spatial region with a radius of 0.3 mm and centered at m) is analyzed. Based on the final aggregation location of this microbubble, the critical conductive path in the preset circuit layout design (this design is the circuit and component layout scheme formulated in the circuit design stage, such as the location planning of key lines such as the airbag trigger signal transmission line with a width of 0.12 mm and the brake system power supply line with a width of 0.15 mm in the preset circuit layout design of a certain automotive safety control module) is analyzed. This path is a conductive line that ensures the core function of the circuit. For example, the airbag trigger signal transmission line mentioned above is responsible for transmitting the sensor signal to the control chip. If a problem occurs, the airbag will not be able to trigger normally. The spatial relationship of the microbubbles is used to determine whether they cause blockage of the conductive path or current leakage (for example, if the shortest distance between the final aggregation location of the microbubbles and the airbag trigger signal transmission line is only 0.03mm, and the average diameter of the microbubbles reaches 0.05mm, the microbubbles may interfere with the signal transmission in the line, leading to signal attenuation or leakage, and the electrical performance failure risk is determined to be "medium to high risk"). Based on the final aggregation location of the microbubbles, the interface between this area and the preset interlayer bonding interface (this interface is the bonding surface of different material layers in a multilayer circuit board, such as the top copper foil (thickness 0.03mm) and the FR-4 substrate (thickness 0.03mm) in a multilayer circuit board) is analyzed to obtain the electrical performance failure risk.The spatial relationship between the bonding interface (2mm) and the FR-4 substrate (whose integrity affects the structural strength and insulation performance of the circuit board) is used to determine whether microbubbles cause interlayer delamination or crack propagation (for example, if the final aggregation area of ​​microbubbles is completely within the bonding interface between the top copper foil and the FR-4 substrate, and the number of microbubbles in this area reaches 6, with the diameter of each microbubble between 0.04-0.06mm, the presence of microbubbles may damage the interlayer bonding force and cause interlayer delamination; based on this, the structural integrity failure risk is determined to be "high risk"). The structural integrity failure risk is then obtained. Based on the electrical performance failure risk and the structural integrity... The system assesses failure risk and determines whether the circuit has entered a stage of complete functional loss. (For example, if the electrical performance failure risk is "medium-high risk" and the structural integrity failure risk is "high risk," the combined effect could damage core circuit functions (such as airbag signal transmission and circuit structural stability), thus determining that the circuit has entered a stage of complete functional loss. If the electrical performance failure risk is "low risk" (e.g., the distance between the microbubble and the critical conductive path is greater than 0.1 mm) and the structural integrity failure risk is "low risk" (e.g., the microbubble is not at the interlayer interface), then the circuit has not entered the functional failure period.) The system outputs the functional failure period determination result.

[0073] The above technical solution accurately identifies the impact of microbubble aggregation locations on critical circuit structures, breaking the limitations of existing assessments that "emphasize the characteristics of microbubbles themselves while neglecting their location impact." This ensures a more comprehensive assessment of circuit functional failure risks—whether it's the potential for "small-sized microbubbles to aggregate in critical conductive paths" or "microbubbles to aggregate at interlayer interfaces," these risks can be accurately identified, preventing circuit failures caused by missed risk assessments. Furthermore, the assessment process aligns with the actual failure mechanism of microelectronic circuits, where "location determines function," providing a clear direction for circuit design optimization and reducing the risk of failure caused by microbubbles from the source. The output results directly support reliability management throughout the circuit's entire lifecycle, guiding layout optimization during the design phase and assisting in the development of maintenance plans during the usage phase. This ensures stable operation of microelectronic circuits in different application scenarios, extends circuit lifespan, and reduces economic losses and safety hazards caused by circuit failures.

[0074] Figure 3 A schematic diagram of the structure of an intelligent information processing system for a microelectronic circuit provided in an embodiment of this application is shown below. Figure 3 As shown, the intelligent information processing system 300 of a microelectronic circuit in this embodiment includes: a thermoelectric coupling module 301, a bubble evolution module 302, and a bubble evaluation module 303.

[0075] Thermoelectric coupling module 301 is used to acquire electronic device information set, and based on the electronic device information set, analyze the positional deviation effect caused by thermo-electric multi-physical coupling on the position of microbubbles in the middle layer of multilayer circuit board, and obtain dynamic thermoelectric coupling characteristic information; bubble evolution module 302 is used to analyze the evolution stages of microbubbles under the influence of dynamic multi-field coupling based on the dynamic thermoelectric coupling characteristic information, and obtain multi-stage evolution results; bubble evaluation module 303 is used to evaluate the potential hazard degree of microbubbles corresponding to each evolution stage based on the multi-stage evolution results, and output a microbubble risk report.

[0076] Optionally, when the thermoelectric coupling module 301 analyzes the positional deviation caused by thermo-electric multi-physical coupling on the location of microbubbles in the middle layer of a multilayer circuit board based on the electronic device information set, and obtains dynamic thermoelectric coupling characteristic information, it is specifically used for:

[0077] The electronic device information set includes device operating temperature data, device operating current data, and multilayer circuit board layered structure characteristics. Based on the device operating temperature data and the multilayer circuit board layered structure characteristics, the microbubble position displacement trend caused by the difference in material thermal expansion under thermal load is analyzed to obtain a thermally induced displacement component. Based on the device operating current data and the multilayer circuit board layered structure characteristics, the microbubble position displacement trend caused by uneven current distribution under electric field is analyzed to obtain an electro-induced displacement component. Based on the thermally induced displacement component and the electro-induced displacement component, the interactive influence and dynamic superposition process of microbubble position displacement under thermo-electro-physical field coupling is analyzed to obtain the dynamic thermo-electric coupling characteristic information.

[0078] Optionally, when the thermoelectric coupling module 301 analyzes the microbubble position shift trend caused by the difference in thermal expansion of materials under thermal load on the multilayer circuit board based on the device's operating temperature data and the layered structure characteristics of the multilayer circuit board, and obtains the thermally induced shift component, it is specifically used for:

[0079] The device operating temperature data includes the thermal conductivity and thermal expansion coefficient of each substrate layer; the multilayer circuit board layer structure characteristics include interlayer bonding strength, interlayer thermal resistance, layer thickness, conductive line width, conductive line spacing, and dielectric layer thickness; based on the thermal expansion coefficient of each substrate layer and the layer thickness, the difference in thermal expansion deformation of adjacent material layers under thermal load is analyzed to obtain the interlayer deformation mismatch; based on the interlayer deformation mismatch, combined with the interlayer bonding strength and the interlayer thermal resistance, the interfacial shear stress and thermal resistance distribution caused by the interlayer deformation mismatch under interlayer constraints are analyzed to obtain the interfacial stress-thermal resistance coupling state; based on the interfacial stress-thermal resistance coupling state, the magnitude of the thermally induced driving force and the direction of thermally induced positional displacement of the microbubble in the thermo-mechanical environment are analyzed, and the magnitude of the thermally induced driving force and the direction of thermally induced positional displacement are integrated to obtain the thermally induced displacement component.

[0080] Optionally, when the thermoelectric coupling module 301 analyzes the microbubble position shift trend caused by uneven current distribution under an electric field on the multilayer circuit board based on the device's operating current data and the layered structure characteristics of the multilayer circuit board, and obtains the electroinduced shift component, it is specifically used for:

[0081] The device operating current data includes the resistivity and dielectric constant of each substrate layer. Based on the resistivity of each substrate layer, combined with the width and spacing of the conductive lines, the skin effect and edge effect generated when current flows in the multilayer circuit board are analyzed to obtain the local current density distribution. Based on the local current density distribution, combined with the dielectric layer thickness and the dielectric constant of each substrate layer, the non-uniform electric field intensity distribution caused by the local current density distribution is analyzed to obtain the gradient electric field distribution. Based on the gradient electric field distribution, the magnitude of the dielectric force and the direction of electroinduced position shift experienced by the microbubble in the gradient electric field are analyzed. The magnitude of the dielectric force and the direction of electroinduced position shift are integrated to obtain the electroinduced shift component.

[0082] Optionally, when the thermoelectric coupling module 301 analyzes the interactive influence and dynamic superposition process of microbubble position displacement under the coupling of thermo-electrophysical fields based on the thermally induced displacement component and combined with the electro-induced displacement component to obtain the dynamic thermoelectric coupling characteristic information, it is specifically used for:

[0083] Based on the thermally induced offset component, the modulation effect of temperature change on the material resistivity is analyzed, and then the electro-induced offset component is corrected according to the modulated resistivity to obtain a first corrected electro-induced offset component. Based on the electro-induced offset component, the additional temperature rise caused by the current distribution is analyzed, and the thermally induced offset component is corrected according to the additional temperature rise to obtain a first corrected thermally induced offset component. The first corrected thermally induced offset component and the first corrected electro-induced offset component are vector synthesized to obtain an initial coupling offset trend. The new local temperature field and electric field changes caused by the initial coupling offset trend are iteratively analyzed, and the feedback path is repeated to simulate the time-varying motion trajectory of microbubbles under the coupling of thermo-electrophysical fields to obtain a corrected thermo-electro-coupled offset component. Based on the corrected thermo-electro-coupled offset component, the dynamic thermo-electro-coupled characteristic information used to characterize the final comprehensive motion trend of microbubbles is obtained.

[0084] Optionally, when the bubble evolution module 302 performs vector synthesis of the first corrected thermally induced offset component and the first corrected electro-induced offset component to obtain the initial coupling offset trend, it is specifically used for:

[0085] Based on the thermally induced position shift direction and combined with the electro-induced position shift direction, the synergistic or antagonistic relationship between the thermal and electro-induced effects in terms of direction is analyzed to obtain the thermo-electric effect direction relationship. Analyzing the thermo-electric effect direction relationship, if the thermally induced position shift direction and the electro-induced position shift direction tend to be in the same direction, the magnitude of the thermally induced driving force and the magnitude of the dielectric force are superimposed, and the same direction is taken as the synthesis direction to obtain the enhanced synthesis shift direction and the superimposed force. Analyzing the thermo-electric effect direction relationship, if the thermally induced position shift direction and the electro-induced position shift direction tend to be in opposite directions, the magnitude of the thermally induced driving force and the magnitude of the dielectric force are canceled out, and the direction corresponding to the remaining net force is taken as the synthesis direction to obtain the weakened synthesis shift direction and the canceled force. Integrating the enhanced synthesis shift direction, the superimposed force, the weakened synthesis shift direction, and the canceled force, the initial coupling shift trend is obtained.

[0086] Optionally, when the bubble evolution module 302 analyzes the evolution stage of microbubbles under the influence of dynamic multi-field coupling based on the dynamic thermoelectric coupling characteristic information and obtains multi-stage evolution results, it is specifically used for:

[0087] Based on the corrected thermo-electric coupling-induced offset component, the microbubble movement direction and microbubble position information are analyzed to determine whether the microbubble is in the initial stable stage before affecting circuit performance, thus obtaining the performance latency determination result. If it is not in the performance latency period, the migration rate and aggregation tendency of the microbubble under thermo-electric coupling are analyzed to determine whether the microbubble has entered the progressive development stage of size expansion and interface peeling, thus obtaining the damage accumulation period determination result. If it is not in the damage accumulation period, the aggregation position of the microbubble is analyzed to determine whether it is in a critical conductive path or interlayer interface, thus determining whether it has triggered the final failure stage of circuit short circuit or structural cracking, thus obtaining the functional failure period determination result. The performance latency determination result, the damage accumulation period determination result, and the functional failure period determination result are integrated to obtain the multi-stage evolution result.

[0088] Optionally, when the bubble evolution module 302 analyzes the migration rate and aggregation tendency of microbubbles under thermo-electric coupling if the microbubbles are not in the performance latency period, and determines whether the microbubbles have entered the progressive development stage of size expansion and interface peeling to obtain the damage accumulation period determination result, it is specifically used for:

[0089] Based on the magnitude of the thermally induced driving force and the magnitude of the dielectric force, the acceleration and directional stability of microbubbles in the thermo-electric coupling field are analyzed to obtain microbubble migration behavior characteristics. Based on the microbubble migration behavior characteristics, combined with the layered structure characteristics of multilayer circuit boards, the probability of microbubbles colliding and merging with other microbubbles or interface defects during migration is analyzed to obtain microbubble aggregation tendency. Based on the microbubble aggregation tendency, the rate at which microbubble size increases due to aggregation effect and the magnitude of the peeling force generated by the increased microbubble on the surrounding material are analyzed to obtain interface peeling risk characteristics. Based on the interface peeling risk characteristics, it is determined whether the microbubble has entered the damage development stage characterized by size expansion and interface peeling, and the damage accumulation period determination result is output.

[0090] Optionally, when the bubble assessment module 303 analyzes whether the aggregation location of microbubbles is at a critical conductive path or interlayer interface if the damage accumulation period is not yet in progress, and determines whether it will lead to a short circuit or structural cracking in the final failure stage, and obtains the functional failure period determination result, it is specifically used for:

[0091] Based on the time-varying motion trajectory, the final aggregation location region of the microbubbles is determined. Based on the final aggregation location region of the microbubbles, the spatial relationship between the final aggregation location region and the key conductive paths in the preset circuit layout design is analyzed to determine whether the microbubbles cause conductive path blockage or current leakage, thus obtaining the electrical performance failure risk. Based on the final aggregation location region of the microbubbles, the spatial relationship between the final aggregation location region and the preset interlayer bonding interface is analyzed to determine whether the microbubbles cause interlayer delamination or crack propagation, thus obtaining the structural integrity failure risk. Based on the electrical performance failure risk and the structural integrity failure risk, it is determined whether the circuit has entered the failure stage of complete loss of function, and the functional failure period determination result is output.

[0092] The system in this embodiment can be used to execute the methods of any of the above embodiments, and its implementation principle and technical effect are similar, so they will not be described again here.

Claims

1. A method of intelligent information processing for a microelectronic circuit, characterized by, The method comprises: obtaining an electronic device information set, based on the electronic device information set, analyzing the position deviation effect of the micro-bubble position in the multilayer circuit board caused by the thermal-electric multi-physical coupling, and obtaining dynamic thermal-electric coupling characteristic information; based on the dynamic thermal-electric coupling characteristic information, analyzing the evolution stage of the micro-bubble under the influence of dynamic multi-field coupling, and obtaining a multi-stage evolution result; based on the multi-stage evolution result, the potential harm degree of the micro-bubble in each evolution stage is evaluated, and a micro-bubble risk report is output.

2. The method of claim 1, wherein, The method comprises: The electronic device information set comprises device working temperature data, device working current data and multilayer circuit board layer structure characteristics; based on the device working temperature data, combining the multilayer circuit board layer structure characteristics, analyzing the micro-bubble position deviation trend caused by the material thermal expansion difference of the multilayer circuit board under thermal load, and obtaining a thermal deviation component; based on the device working current data, combining the multilayer circuit board layer structure characteristics, analyzing the micro-bubble position deviation trend caused by the uneven distribution of current under the action of electric field, and obtaining an electric deviation component; based on the thermal deviation component, combining the electric deviation component, analyzing the interactive influence and dynamic superposition process of the micro-bubble position deviation under the action of thermal-electric physical field coupling, and obtaining the dynamic thermal-electric coupling characteristic information.

3. The method of claim 2, wherein, The method comprises: The device working temperature data comprises the thermal conductivity coefficient of each layer substrate and the thermal expansion coefficient of each layer substrate; The multilayer circuit board layer structure characteristics comprise interlayer bonding strength, interlayer thermal resistance, layer thickness, conductive line width, conductive line spacing and dielectric layer thickness; based on the thermal expansion coefficient of each layer substrate, combining the thickness of each layer, analyzing the thermal expansion deformation difference of adjacent material layers under thermal load, and obtaining an interlayer deformation mismatch amount; based on the interlayer deformation mismatch amount, combining the interlayer bonding strength and the interlayer thermal resistance, analyzing the interfacial shear stress and thermal resistance distribution caused by the interlayer deformation mismatch amount under the constraint of the interlayer, and obtaining an interfacial stress-thermal resistance coupling state; based on the interfacial stress-thermal resistance coupling state, analyzing the thermal driving force and the thermal position deviation direction of the micro-bubble in the thermal-force environment, and integrating the thermal driving force and the thermal position deviation direction to obtain the thermal deviation component.

4. The method of claim 3, wherein, The method comprises: The device working current data comprises the resistivity of each layer substrate and the dielectric constant of each layer substrate; Based on the resistivity of each layer substrate, combined with the conductive line width and the conductive line spacing, the skin effect and the edge effect generated by the current flowing in the multilayer circuit board are analyzed to obtain the local current density distribution; Based on the local current density distribution, combined with the thickness of the dielectric layer and the dielectric constant of each layer substrate, the non-uniform electric field strength distribution caused by the local current density distribution is analyzed to obtain the gradient electric field distribution; Based on the gradient electric field distribution, the dielectrophoresis force acting on the microbubble in the gradient electric field and the electrically induced position offset direction are analyzed, and the dielectrophoresis force and the electrically induced position offset direction are integrated to obtain the electrically induced offset component.

5. The method of claim 4, wherein, Based on the thermally induced offset component, combined with the electrically induced offset component, the interaction and dynamic superposition process of the position offset of the microbubble under the coupling of thermal and electric physical fields are analyzed to obtain the dynamic thermal and electric coupling characteristic information, including: Based on the thermally induced offset component, the modulation effect of temperature change on the resistivity of the material is analyzed, and then the electrically induced offset component is corrected according to the modulated resistivity to obtain a first corrected electrically induced offset component; Based on the electrically induced offset component, the additional temperature rise generated by the current distribution is analyzed, and the thermally induced offset component is corrected according to the additional temperature rise to obtain a first corrected thermally induced offset component; The first corrected thermally induced offset component and the first corrected electrically induced offset component are vector synthesized to obtain an initial coupling offset trend; The new local temperature field and electric field changes caused by the initial coupling offset trend are iteratively analyzed, and the feedback path is repeated to simulate the time-varying motion trajectory of the microbubble under the coupling of thermal and electric physical fields, and to obtain a corrected thermally and electrically coupled offset component; Based on the corrected thermally and electrically coupled offset component, the dynamic thermal and electric coupling characteristic information used to represent the final comprehensive motion trend of the microbubble is obtained.

6. The method of claim 5, wherein, The first corrected thermally induced offset component and the first corrected electrically induced offset component are vector synthesized to obtain an initial coupling offset trend, including: Based on the thermally induced position offset direction, combined with the electrically induced position offset direction, the synergistic or antagonistic relationship between the thermal effect and the electric effect in the direction is analyzed to obtain the thermal and electric action direction relationship; The thermal and electric action direction relationship is analyzed, if the thermally induced position offset direction and the electrically induced position offset direction tend to be in the same direction, then the thermally induced driving force size and the dielectrophoresis force acting size are superposed, and the same direction is taken as the synthesis direction to obtain a strong synthesis offset direction and a superposed force; The thermal and electric action direction relationship is analyzed, if the thermally induced position offset direction and the electrically induced position offset direction tend to be in the opposite direction, then the thermally induced driving force size and the dielectrophoresis force acting size are offset, and the direction corresponding to the remaining net force is taken as the synthesis direction to obtain a weak synthesis offset direction and a residual force; The strong synthesis offset direction, the superposed force, the weak synthesis offset direction and the residual force are integrated to obtain the initial coupling offset trend.

7. The method of claim 5, wherein, The multi-stage evolution result is obtained by analyzing the evolution stage of the microbubble under the influence of the dynamic multi-field coupling based on the dynamic thermoelectric coupling feature information, including: Based on the corrected thermoelectric coupling bias shift component, the microbubble motion direction and microbubble position information are analyzed to determine whether the microbubble is in the initial stable stage which does not affect the circuit performance, and a performance incubation period determination result is obtained; If not in the performance incubation period, the migration rate and aggregation tendency of the microbubble under the action of the thermoelectric coupling are analyzed to determine whether the microbubble enters the gradual development stage of size expansion and interface peeling, and a damage accumulation period determination result is obtained; If not in the damage accumulation period, it is determined whether the microbubble is in the final failure stage of causing circuit short circuit or structure cracking by analyzing whether the aggregation position of the microbubble is in the key conductive path or the interlayer interface, and a function failure period determination result is obtained; The performance incubation period determination result, the damage accumulation period determination result and the function failure period determination result are integrated to obtain the multi-stage evolution result.

8. The method of claim 7, wherein, If not in the performance incubation period, the migration rate and aggregation tendency of the microbubble under the action of the thermoelectric coupling are analyzed to determine whether the microbubble enters the gradual development stage of size expansion and interface peeling, and a damage accumulation period determination result is obtained, including: Based on the size of the thermally induced driving force and the size of the dielectrophoresis force, the motion acceleration and direction stability of the microbubble in the thermoelectric coupling field are analyzed to obtain the microbubble migration behavior characteristics; Based on the microbubble migration behavior characteristics, the probability of collision and merging of the microbubble with other microbubbles or interface defects in the migration process is analyzed in combination with the layered structure characteristics of the multi-layer circuit board to obtain the microbubble aggregation tendency; Based on the microbubble aggregation tendency, the rate of increase in the size of the microbubble due to the aggregation effect and the size of the peeling force generated by the microbubble on the surrounding material after the size increases are analyzed to obtain the interface peeling risk characteristics; Based on the interface peeling risk characteristics, it is determined whether the microbubble enters the damage development stage characterized by size expansion and interface peeling, and the damage accumulation period determination result is output.

9. The method of claim 7, wherein, If not in the damage accumulation period, it is determined whether the microbubble is in the final failure stage of causing circuit short circuit or structure cracking by analyzing whether the aggregation position of the microbubble is in the key conductive path or the interlayer interface, and a function failure period determination result is obtained, including: Based on the time-varying motion trajectory, the final aggregation position area of the microbubble is determined; Based on the final aggregation position area of the microbubble, the spatial position relationship between the final aggregation position area and the key conductive path in the preset circuit layout design is analyzed to determine whether the microbubble causes the conductive path to be blocked or the current to be leaked, and an electrical performance failure risk is obtained; Based on the final aggregation position area of the microbubble, the spatial position relationship between the final aggregation position area and the preset interlayer bonding interface is analyzed to determine whether the microbubble causes the interlayer to be delaminated or the crack to be expanded, and a structural integrity failure risk is obtained; Based on the electrical performance failure risk and the structural integrity failure risk, it is determined whether to enter the failure stage of complete loss of circuit function, and the function failure period determination result is output.

10. An intelligent information processing system for a microelectronic circuit, characterized by It is applied to the method of any one of claims 1-9, including: A thermoelectric coupling module is configured to obtain an electronic device information set, analyze, based on the electronic device information set, a position deviation effect on a position of a microbubble in a layer of a multilayer circuit board caused by a thermoelectric multi-physical coupling, and obtain dynamic thermoelectric coupling characteristic information; A bubble evolution module is configured to analyze, based on the dynamic thermoelectric coupling characteristic information, an evolution stage of the microbubble under the influence of dynamic multi-field coupling, and obtain a multi-stage evolution result; A bubble evaluation module is configured to evaluate, based on the multi-stage evolution result, a potential harm degree of the microbubble corresponding to each evolution stage, and output a microbubble risk report.

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