Preparation method and application of mass-producible poly (4-methyl-1-pentene) dielectric energy storage film with high insulating strength
Poly(4-methyl-1-pentene) dielectric energy storage films were prepared by twin-screw melt extrusion and ultraviolet irradiation grafting technology, which solved the problems of insulation performance degradation and energy storage density reduction of films used in commercial capacitors under high temperature and high pressure conditions, and realized the industrial production of films with high insulation strength and excellent energy storage performance.
Patent Information
- Application Number
- CN202511859677.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-10
- Publication Date
- 2026-01-09
AI Technical Summary
Existing commercial capacitor dielectric films suffer from increased conductivity loss, deteriorated insulation performance, and reduced energy storage density under high temperature and high pressure conditions, and traditional preparation methods are difficult to achieve industrial-scale continuous production.
Poly(4-methyl-1-pentene) dielectric energy storage films were prepared by combining twin-screw melt extrusion technology with ultraviolet irradiation-induced grafting method. By grafting hydroxyethyl methacrylate onto the film surface, polar hydroxyl groups and flexible groups were introduced to enhance intermolecular forces and dielectric response.
It improves the insulation properties and relative permittivity of the thin film, significantly increases the energy storage density, and achieves high insulation strength and excellent energy storage performance, making it suitable for the industrial production of commercial capacitors.
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Figure CN121293570A_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of electrical component assembly material preparation process, specifically relating to a method for preparing and applying a mass-producible poly(4-methyl-1-pentene) dielectric energy storage film with high insulation strength. Background Technology
[0002] Thin-film capacitors are widely used in high-energy-density DC-supported capacitor units, high-frequency, low-loss energy storage modules for resonant circuits, and composite dielectric films for complex operating conditions, showing broad application prospects. Driven by the demand for integrated capacitor components and high energy density in new energy power systems (such as vehicle electric drives and megawatt-level photovoltaic inverters), energy storage dielectric materials face severe challenges under high-temperature and high-pressure conditions. Existing commercial capacitor dielectric films suffer from increased conductivity loss, deteriorated insulation performance, and reduced energy storage density under operating conditions. Commercial biaxially oriented polypropylene (BOPP) has a long-term service temperature ≤85℃, and the addition of additional cooling devices leads to an increase in the size of electrical components. Poly(4-methyl-1-pentene) (PMP, T...) m Due to its combination of low dielectric loss and high heat resistance, polymers with a dielectric strength greater than 230℃ are expected to become energy storage dielectric materials for next-generation high-performance capacitor components. It is well known that the energy storage characteristics of linear polymers are linearly positively correlated with the relative permittivity and the square of the breakdown strength. Therefore, constructing dielectric thin film materials for electrostatic capacitors with high polarization strength and high insulation performance has become a current focus of polymer dielectric research.
[0003] As a semi-crystalline polymer, the crystallinity of poly(4-methyl-1-pentene) is greatly influenced by the preparation method. Traditional solution casting leaves micropores after solvent evaporation, disrupting the continuity of the crystal structure. Residual solvent also acts as a plasticizer, increasing the mobility of molecular chain segments and further hindering the orderly arrangement of the crystal structure. In contrast, poly(4-methyl-1-pentene) films prepared by melt extrusion and uniaxial stretching are more prone to nucleation after high-temperature melting and quenching processes, effectively enhancing the degree of crystallinity. Furthermore, current experimental studies of dielectric films prepared by solution casting are mostly limited to small-scale laboratory settings, making them unsuitable for industrial-scale, continuous roll-to-roll production. Therefore, developing a dielectric film for capacitors that combines high energy storage properties with processing compatibility is a crucial problem urgently needing to be solved in this field. Summary of the Invention
[0004] The purpose of this invention is to solve the problems of increased conductivity loss, deterioration of insulation performance and reduction of energy storage density in existing commercial capacitor dielectric films under operating conditions, and to provide a method for preparing and applying a mass-producible poly(4-methyl-1-pentene) dielectric energy storage film with high insulation strength.
[0005] This invention provides a method for industrial-scale preparation of poly(4-methyl-1-pentene) dielectric energy storage films by combining twin-screw melt extrusion technology with ultraviolet irradiation-induced grafting.
[0006] A method for preparing a mass-producible poly(4-methyl-1-pentene) dielectric energy storage film with high insulating strength is specifically carried out according to the following steps:
[0007] I. Preparation of pure poly(4-methyl-1-pentene) thin films:
[0008] ① Remove the residual moisture from the surface of the poly(4-methyl-1-pentene) resin to obtain dry poly(4-methyl-1-pentene) resin;
[0009] ② Set the heating zone temperature, die head extrusion temperature, and screw speed of the twin-screw extruder. After the temperature of each zone and the screw speed tend to stabilize, put the dried poly(4-methyl-1-pentene) resin into the hopper of the extruder.
[0010] ③ Adjust the temperature of the chill roll, draw the molten poly(4-methyl-1-pentene) resin at the die head of the twin-screw extruder onto the surface of the chill roll for cooling, and then perform unidirectional stretching;
[0011] ④ Set the roller speed and roller tension during the film winding process, and wind up the stretched film to obtain a pure poly(4-methyl-1-pentene) film with uniform thickness.
[0012] II. Grafting of hydroxyethyl methacrylate onto the surface of poly(4-methyl-1-pentene) thin films induced by ultraviolet irradiation:
[0013] ① Cut the pure poly(4-methyl-1-pentene) film and anneal it at high temperature to obtain the annealed poly(4-methyl-1-pentene) film;
[0014] ② Add benzophenone to acetone and stir to dissolve it, thus obtaining a benzophenone solution;
[0015] ③ Add hydroxyethyl methacrylate to anhydrous ethanol and stir until homogeneous to obtain a hydroxyethyl methacrylate solution;
[0016] ④ Immerse the annealed poly(4-methyl-1-pentene) film in benzophenone solution until the film surface is fully wetted, remove it and transfer it to hydroxyethyl methacrylate solution, and then irradiate it under ultraviolet light to carry out the grafting reaction to obtain the grafted film.
[0017] ⑤ The grafted film is immersed in acetone for cleaning and then dried to obtain a mass-producible poly(4-methyl-1-pentene) dielectric energy storage film with high insulation strength.
[0018] Mass-producible poly(4-methyl-1-pentene) dielectric energy storage films with high insulation strength are used in capacitors.
[0019] The principle of this invention:
[0020] After grafting hydroxyethyl methacrylate onto the surface of poly(4-methyl-1-pentene), polar hydroxyl groups, carbonyl groups, and flexible ether bonds are introduced into the molecular side chains. This improves the relative permittivity of the dielectric film by enhancing the orientation polarization and dielectric response of the dielectric. The longer hydroxyethyl methacrylate side chain structure can also effectively increase the chain entanglement between molecules and inhibit the movement between molecular chains, which is beneficial to further enhance the intermolecular forces of poly(4-methyl-1-pentene) and improve the stability of electrical properties. As a result, excellent insulation properties and relative permittivity are obtained, making the poly(4-methyl-1-pentene) dielectric energy storage film with high insulation strength obtained by this invention have better energy storage performance.
[0021] The significant advantages of this invention compared to existing technologies are:
[0022] I. Compared with the traditional solution casting method, the preparation process of this invention is simple. The preparation process first uses twin-screw melt extrusion technology to prepare pure film, and then uses ultraviolet irradiation technology to induce grafting on the film surface. The modification process is novel and has broad practical application prospects. It effectively breaks through the bottleneck of traditional preparation processes that are difficult to get rid of laboratory preparation scale. It is well adapted to the preparation process of commercial capacitor films and can be prepared in large quantities.
[0023] II. This invention modifies the surface of poly(4-methyl-1-pentene) film by grafting with ultraviolet irradiation. Grafting with hydroxyethyl methacrylate with a long chain structure can not only increase the chain entanglement between molecules and form interlocking between molecular chains to restrict the movement between molecular chains, but also effectively reduce the volume of amorphous regions and suppress the transport of charge carriers. In addition, it can also help improve the problem of local electric field concentration between crystalline and amorphous regions, and further improve the insulation strength of the insulating medium.
[0024] Third, after grafting hydroxyethyl methacrylate onto the surface of poly(4-methyl-1-pentene), the hydroxyl and carbonyl groups introduced into the molecular side chain have large polarity, which can improve the relative permittivity of the dielectric film by enhancing the orientation polarization and dielectric response of the medium.
[0025] IV. Grafting hydroxyethyl methacrylate onto the surface of poly(4-methyl-1-pentene) results in excellent insulation properties and an enhanced relative permittivity, leading to superior energy storage performance. At room temperature, with a charge / discharge efficiency ≥90%, the energy storage density reaches 4.72 J / cm³. 3 This is significantly higher than the energy storage density of 3.32 J / cm³ for pure poly(4-methyl-1-pentene) films.3 Energy storage density increased by 42%. Attached Figure Description
[0026] Figure 1 The dielectric spectrum of the mass-producible poly(4-methyl-1-pentene) dielectric energy storage film with high insulation strength prepared in Examples 1-2 and the pure poly(4-methyl-1-pentene) film prepared in the control example at 25°C.
[0027] Figure 2 The Weibull breakdown strength distribution at 25°C is shown for the mass-producible poly(4-methyl-1-pentene) dielectric energy storage films with high insulation strength prepared in Examples 1-2 and the pure poly(4-methyl-1-pentene) films prepared in the control example.
[0028] Figure 3 The graph shows the energy storage characteristics of the mass-producible poly(4-methyl-1-pentene) dielectric energy storage films with high insulation strength prepared in Examples 1-2 and the pure poly(4-methyl-1-pentene) films prepared in the control examples as a function of electric field strength at 25°C. Detailed Implementation
[0029] Specific Implementation Method 1: This implementation method is a mass-producible method for preparing a poly(4-methyl-1-pentene) dielectric energy storage film with high insulation strength, specifically completed according to the following steps:
[0030] I. Preparation of pure poly(4-methyl-1-pentene) thin films:
[0031] ① Remove the residual moisture from the surface of the poly(4-methyl-1-pentene) resin to obtain dry poly(4-methyl-1-pentene) resin;
[0032] ② Set the heating zone temperature, die head extrusion temperature, and screw speed of the twin-screw extruder. After the temperature of each zone and the screw speed tend to stabilize, put the dried poly(4-methyl-1-pentene) resin into the hopper of the extruder.
[0033] ③ Adjust the temperature of the chill roll, draw the molten poly(4-methyl-1-pentene) resin at the die head of the twin-screw extruder onto the surface of the chill roll for cooling, and then perform unidirectional stretching;
[0034] ④ Set the roller speed and roller tension during the film winding process, and wind up the stretched film to obtain a pure poly(4-methyl-1-pentene) film with uniform thickness.
[0035] II. Grafting of hydroxyethyl methacrylate onto the surface of poly(4-methyl-1-pentene) thin films induced by ultraviolet irradiation:
[0036] ① Cut the pure poly(4-methyl-1-pentene) film and anneal it at high temperature to obtain the annealed poly(4-methyl-1-pentene) film;
[0037] ② Add benzophenone to acetone and stir to dissolve it, thus obtaining a benzophenone solution;
[0038] ③ Add hydroxyethyl methacrylate to anhydrous ethanol and stir until homogeneous to obtain a hydroxyethyl methacrylate solution;
[0039] ④ Immerse the annealed poly(4-methyl-1-pentene) film in benzophenone solution until the film surface is fully wetted, remove it and transfer it to hydroxyethyl methacrylate solution, and then irradiate it under ultraviolet light to carry out the grafting reaction to obtain the grafted film.
[0040] ⑤ The grafted film is immersed in acetone for cleaning and then dried to obtain a mass-producible poly(4-methyl-1-pentene) dielectric energy storage film with high insulation strength.
[0041] Specific Implementation Method Two: This implementation method differs from Specific Implementation Method One in that: in step one ①, the poly(4-methyl-1-pentene) resin is placed in an oven at a temperature of 50℃~70℃ for 4h~6h to remove residual moisture from the surface of the poly(4-methyl-1-pentene) resin, resulting in dried poly(4-methyl-1-pentene) resin. The other steps are the same as in Specific Implementation Method One.
[0042] Specific Implementation Method Three: This implementation method differs from Specific Implementation Method One or Two in that: in step one ②, the heating zone temperature of the twin-screw extruder is set to 240℃~270℃, specifically zone one at 240℃, zone two at 250℃, zone three at 250℃, zone four at 260℃, zone five at 260℃, and zone six at 270℃; the die head extrusion temperature is 270℃~280℃, and the twin-screw rotation speed is 60 rpm~80 rpm. Other steps are the same as in Specific Implementation Method One or Two.
[0043] Specific Implementation Method Four: This implementation method differs from Specific Implementation Methods One to Three in that: in step one ③, the temperature of the chilling roller is adjusted to 210℃~220℃; in step one ④, the roller speed during the film winding process is set to 90r / min~100r / min, and the roller tension is 50N~60N. Other steps are the same as in Specific Implementation Methods One to Three.
[0044] Specific Implementation Method Five: This implementation method differs from Specific Implementation Methods One to Four in that: in step two①, the pure poly(4-methyl-1-pentene) film is cut into 5cm×5cm pieces and annealed at 150℃~170℃ for 2h~3h; in step two②, 1g~2g of benzophenone is added to 100mL of acetone and stirred for 2h~4h to dissolve it, obtaining a benzophenone solution. The other steps are the same as in Specific Implementation Methods One to Four.
[0045] Specific Implementation Method Six: The difference between this implementation method and Specific Implementation Methods One to Five is that in step two, 10 mL to 30 mL of hydroxyethyl methacrylate is added to 80 mL of anhydrous ethanol and stirred until homogeneous to obtain a hydroxyethyl methacrylate solution. The other steps are the same as in Specific Implementation Methods One to Five.
[0046] Specific Implementation Method Seven: This implementation method differs from Specific Implementation Methods One to Six in that: In step two, fourth, the annealed poly(4-methyl-1-pentene) film is immersed in a benzophenone solution for 30 to 60 minutes until the film surface is fully wetted. After removal, it is transferred to a hydroxyethyl methacrylate solution and then irradiated under a 3kW, 365nm UV lamp for 5 to 15 seconds to carry out a grafting reaction, obtaining the grafted film. The other steps are the same as in Specific Implementation Methods One to Six.
[0047] Specific Implementation Method Eight: This implementation method differs from Specific Implementation Methods One to Seven in that: In step two (⑤), the grafted film is immersed in acetone for cleaning to remove hydroxyethyl methacrylate and reaction byproducts, and then dried in an oven at 80°C to 90°C for 2 to 4 hours to obtain a mass-producible poly(4-methyl-1-pentene) dielectric energy storage film with high insulation strength. Other steps are the same as in Specific Implementation Methods One to Seven.
[0048] Specific Implementation Method Nine: This implementation method differs from Specific Implementation Methods One through Eight in that: the mass-producible poly(4-methyl-1-pentene) dielectric energy storage film with high insulation strength described in step two (⑤) contains carbonyl groups, ether bonds, and hydroxyl groups. At 25°C, its relative permittivity is 2.15~2.38, its breakdown field strength is 627.6MV / m~628.9MV / m, and its discharge energy density is 4.01 J / cm³ when the charge / discharge efficiency is ≥90%. 3 ~4.72 J / cm 3 The other steps are the same as those in Specific Implementation Methods One through Eight.
[0049] Specific Implementation Method 10: This implementation method describes the application of a mass-producible poly(4-methyl-1-pentene) dielectric energy storage film with high insulation strength in a capacitor.
[0050] The beneficial effects of the present invention are verified using the following embodiments:
[0051] Example 1: A method for preparing a mass-producible poly(4-methyl-1-pentene) dielectric energy storage film with high insulation strength, specifically comprising the following steps:
[0052] I. Preparation of pure poly(4-methyl-1-pentene) thin films:
[0053] ① Place the poly(4-methyl-1-pentene) resin in an oven at 60℃ for 5 hours to remove the residual moisture on the surface of the poly(4-methyl-1-pentene) resin, and obtain the dried poly(4-methyl-1-pentene) resin.
[0054] ② Set the heating zone temperature, die head extrusion temperature, and screw speed of the twin-screw extruder. After the temperature of each zone and the screw speed tend to stabilize, put the dried poly(4-methyl-1-pentene) resin into the hopper of the extruder.
[0055] In step 1②, the temperature range of the heating zone of the twin-screw extruder is set to 240℃~270℃, specifically: zone 1 240℃, zone 2 250℃, zone 3 250℃, zone 4 260℃, zone 5 260℃, and zone 6 270℃; the extrusion temperature of the die head is 270℃~280℃, and the twin-screw speed is 70 rpm.
[0056] ③ Adjust the temperature of the chilling roller to 215℃, draw the molten poly(4-methyl-1-pentene) resin at the die head of the twin-screw extruder onto the surface of the chilling roller for cooling, and then perform unidirectional stretching;
[0057] ④ Set the roller speed and roller tension during the film winding process, and wind up the stretched film to obtain a pure poly(4-methyl-1-pentene) film with uniform thickness.
[0058] In step 1, ④, the roller speed during the film winding process is set to 100 r / min and the roller tension to 55 N.
[0059] II. UV irradiation-induced grafting of poly(4-methyl-1-pentene) film surface:
[0060] ① Cut pure poly(4-methyl-1-pentene) film into 5cm×5cm pieces and anneal at 160℃ for 2h to obtain annealed poly(4-methyl-1-pentene) film.
[0061] ② Add 1.5g of benzophenone to 100mL of acetone and stir for 3 hours to dissolve it, thus obtaining a benzophenone solution;
[0062] ③ Add 20 mL of hydroxyethyl methacrylate to 80 mL of anhydrous ethanol and stir until homogeneous to obtain a hydroxyethyl methacrylate solution;
[0063] ④ Immerse the annealed poly(4-methyl-1-pentene) film in benzophenone solution for 60 minutes until the film surface is fully wetted. After removal, transfer it to hydroxyethyl methacrylate solution and irradiate it under a 3kW, 365nm UV lamp for 5 seconds to carry out the grafting reaction, and obtain the grafted film.
[0064] ⑤ The grafted film is immersed in acetone for cleaning to remove hydroxyethyl methacrylate and reaction byproducts, and then dried in an oven at 85°C for 3 hours to obtain a mass-producible poly(4-methyl-1-pentene) dielectric energy storage film with high insulation strength.
[0065] Example 2: The difference between this example and Example 1 is that in step 2, ④, the annealed poly(4-methyl-1-pentene) film is immersed in benzophenone solution for 60 minutes until the film surface is fully wetted. After removal, it is transferred to hydroxyethyl methacrylate solution and irradiated under a 3kW, 365nm UV lamp for 15 seconds to carry out the grafting reaction, obtaining the grafted film. Other steps and parameters are the same as in Example 1.
[0066] Comparative example: The preparation method of pure poly(4-methyl-1-pentene) film is carried out according to the following steps:
[0067] ① Place the poly(4-methyl-1-pentene) resin in an oven at 60℃ for 5 hours to remove the residual moisture on the surface of the poly(4-methyl-1-pentene) resin, and obtain the dried poly(4-methyl-1-pentene) resin.
[0068] ② Set the heating zone temperature, die head extrusion temperature, and screw speed of the twin-screw extruder. After the temperature of each zone and the screw speed tend to stabilize, put the dried poly(4-methyl-1-pentene) resin into the hopper of the extruder.
[0069] In step ②, the temperature range of the heating zone of the twin-screw extruder is set to 240℃~270℃, specifically 240℃ for zone 1, 250℃ for zone 2, 250℃ for zone 3, 260℃ for zone 4, 260℃ for zone 5, and 270℃ for zone 6; the extrusion temperature of the die head is 270℃~280℃, and the twin-screw speed is 60 rpm~80 rpm;
[0070] ③ Adjust the temperature of the chilling roller to 215℃, draw the molten poly(4-methyl-1-pentene) resin at the die head of the twin-screw extruder onto the surface of the chilling roller for cooling, and then perform unidirectional stretching;
[0071] ④ Set the roller speed and roller tension during the film winding process, and wind up the stretched film to obtain a pure poly(4-methyl-1-pentene) film with uniform thickness.
[0072] In step ④, the roller speed during the film winding process is set to 100 r / min and the roller tension is 55 N.
[0073] Figure 1 The dielectric spectrum of the mass-producible poly(4-methyl-1-pentene) dielectric energy storage film with high insulation strength prepared in Examples 1-2 and the pure poly(4-methyl-1-pentene) film prepared in the control example at 25°C.
[0074] from Figure 1 It can be seen that at 25℃ and 10 3 At Hz, the relative permittivity of the films prepared in the control example, Example 1, and Example 2 were 2.14, 2.15, and 2.38, respectively. In Examples 1 and 2, hydroxyethyl methacrylate can introduce polar hydroxyl, carbonyl, and flexible ether bonds, thereby enhancing the dielectric response of the grafted poly(4-methyl-1-pentene) film. The relative permittivity of Example 1 was not significantly higher than that of the pure poly(4-methyl-1-pentene) energy storage medium film because the irradiation grafting time was too short (5 seconds), the grafting content was small, and thus the impact on dielectric properties was small.
[0075] Figure 2 The Weibull breakdown strength distribution at 25°C is shown for the mass-producible poly(4-methyl-1-pentene) dielectric energy storage films with high insulation strength prepared in Examples 1-2 and the pure poly(4-methyl-1-pentene) films prepared in the control example.
[0076] Depend on Figure 2 It is evident that the grafted hydroxyethyl methacrylate molecule in Examples 1 and 2 possesses a relatively long chain structure. This long chain structure not only increases intermolecular chain entanglement but also forms interlocking between molecular chains, restricting the movement of molecular chains and reducing the volume of the amorphous region of the polymer. This effectively alleviates the problem of local electric field concentration between the crystalline and amorphous regions of the semi-crystalline polymer, effectively enhancing the insulation performance of the grafted dielectric films of the examples. Specifically, the breakdown field strengths of the films prepared in Examples 1 and 2 at 25°C were 627.6 V / m and 628.9 MV / m, respectively, higher than that of the control example (581.2 MV / m), demonstrating the excellent insulation performance of the hydroxyethyl methacrylate-grafted poly(4-methyl-1-pentene) dielectric.
[0077] Figure 3 The graph shows the energy storage characteristics of the mass-producible poly(4-methyl-1-pentene) dielectric energy storage films with high insulation strength prepared in Examples 1-2 and the pure poly(4-methyl-1-pentene) films prepared in the control example at 25°C as a function of electric field strength.
[0078] Depend on Figure 3It can be seen that, since energy storage density is affected by both relative permittivity and breakdown strength, and these two factors are positively correlated, the films prepared in Examples 1 and 2 both exhibit higher relative permittivity and breakdown strength than the pure poly(4-methyl-1-pentene) film in the control example, thus demonstrating superior energy storage density. At 25°C and with a charge / discharge efficiency greater than 90%, the discharge density of the pure poly(4-methyl-1-pentene) film in the control example is 3.32 J / cm². 3 The films prepared in Examples 1 and 2 have a strength of 4.01 J / cm. 3 and 4.72 J / cm 3 .
Claims
1. A method for producing a mass-producible poly(4-methyl-l-pentene) dielectric energy storage film having high insulation strength, characterized by The preparation method is specifically completed according to the following steps: I. Preparation of pure poly(4-methyl-1-pentene) film: ①, removing the residual moisture on the surface of poly(4-methyl-1-pentene) resin to obtain dried poly(4-methyl-1-pentene) resin; ②, set the heating zone temperature of the twin-screw extruder, the extruder temperature and the screw speed, after the temperature and screw speed of each region tend to be stable, put the dried poly(4-methyl-1-pentene) resin into the hopper of the extruder; ③, adjust the temperature of the chill roller, pull the molten poly(4-methyl-1-pentene) resin at the head of the twin-screw extruder to the surface of the chill roller for cooling, and then perform unidirectional stretching; ④, set the roller speed and roller tension during the film winding process, wind the stretched film to obtain a pure poly(4-methyl-1-pentene) film with uniform thickness; II. Ultraviolet irradiation induced grafting of hydroxyethyl methacrylate on the surface of poly(4-methyl-1-pentene) film: ①, cut the pure poly(4-methyl-1-pentene) film and anneal it at high temperature to obtain annealed poly(4-methyl-1-pentene) film; ②, add benzophenone to acetone, stir to dissolve, and obtain a benzophenone solution; ③, add hydroxyethyl methacrylate to anhydrous ethanol, stir evenly, and obtain a hydroxyethyl methacrylate solution; ④, soak the annealed poly(4-methyl-1-pentene) film in the benzophenone solution until the film surface is fully infiltrated, then transfer it to the hydroxyethyl methacrylate solution, and irradiate it under a UV lamp for grafting reaction to obtain a grafted film; ⑤, immerse the grafted film in acetone for cleaning, and then dry it to obtain mass-producible poly(4-methyl-1-pentene) dielectric energy storage film with high insulation strength.
2. The method of claim 1, wherein the poly(4-methyl-l-pentene) dielectric energy storage film has a high insulation strength and is mass-producible. In step 1 ①, the poly(4-methyl-1-pentene) resin is placed in an oven with a temperature of 50℃-70℃ for 4h-6h to remove the residual moisture on the surface of the poly(4-methyl-1-pentene) resin, and dried poly(4-methyl-1-pentene) resin is obtained.
3. The method of claim 1, wherein the poly(4-methyl-l-pentene) dielectric energy storage film has a high insulation strength and is mass-producible. In step 1 ②, the temperature of the heating zone of the twin-screw extruder is set to 240℃-270℃, specifically 240℃ for the first zone, 250℃ for the second zone, 250℃ for the third zone, 260℃ for the fourth zone, 260℃ for the fifth zone, and 270℃ for the sixth zone; the extruder temperature is 270℃-280℃, and the screw speed is 60-80 rpm.
4. The method of claim 1, wherein the poly(4-methyl-l-pentene) dielectric energy storage film has a high insulation strength and is mass-producible. In step 1 ③, the temperature of the chill roller is adjusted to 210℃-220℃; in step 1 ④, the roller speed during the film winding process is set to 90-100 r / min, and the roller tension is 50-60 N.
5. The method of claim 1, wherein the poly(4-methyl-l-pentene) dielectric energy storage film has a high insulation strength and is mass-producible. In step 2 ①, the pure poly(4-methyl-1-pentene) film is cut into 5cm×5cm and annealed at 150℃-170℃ for 2h-3h; in step 2 ②, 1-2g of benzophenone is added to 100mL of acetone, and stirred for 2h-4h to dissolve, obtaining a benzophenone solution.
6. The method of claim 1, wherein the poly(4-methyl-l-pentene) dielectric energy storage film has a high insulation strength and is mass-producible. In step two ③, 10 mL ~ 30 mL of hydroxyethyl methacrylate is added to 80 mL of anhydrous ethanol, and stirred to obtain a hydroxyethyl methacrylate solution.
7. The method of claim 1, wherein the poly(4-methyl-1-pentene) dielectric energy storage film has a high insulation strength and is mass-producible. In step two ④, the annealed poly(4-methyl-1-pentene) film is soaked in the benzophenone solution for 30 min ~ 60 min until the film surface is fully infiltrated, and then transferred to the hydroxyethyl methacrylate solution, and irradiated under a UV lamp with a power of 3 kW and a wavelength of 365 nm for 5 s ~ 15 s to perform a grafting reaction, and a grafted film is obtained.
8. The method of claim 1, wherein the poly(4-methyl-1-pentene) dielectric energy storage film has a high insulation strength and is mass-producible. In step two ⑤, the grafted film is immersed in acetone to clean and remove the hydroxyethyl methacrylate and reaction by-products, and then dried in an oven at 80 ℃ ~ 90 ℃ for 2 h ~ 4 h to obtain a mass-producible poly(4-methyl-1-pentene) dielectric energy storage film with high insulation strength.
9. The method of claim 1, wherein the poly(4-methyl-l-pentene) dielectric energy storage film has a high insulation strength and is mass-producible. The poly(4-methyl-1-pentene) medium energy storage film with high insulation strength and mass production in step two of ⑤ contains carbonyl, ether bond and hydroxyl, the relative dielectric constant is 2.15~2.38 at 25℃, the breakdown field strength is 627.6MV / m~628.9MV / m, and the discharge energy density is 4.01J / cm 3 ~4.72J / cm 3 when the charge and discharge efficiency is ≥90%.
10. Use of the poly(4-methyl-1-pentene) dielectric energy storage film having high insulation strength, which is produced by the production method according to any one of claims 1 to 9, in mass production. It is applied in capacitors.