Near-junction cooling device for high-power curved-surface antenna and use method of near-junction cooling device

Abstract

The invention relates to a high-power curved-surface antenna near-junction cooling device which comprises a high-power chip, a cover plate layer, a micro-channel layer, a transition layer and a liquid collection and separation layer from top to bottom, and the transition layer and the liquid collection and separation layer are communicated in a welding mode to form a full-parallel liquid collection and separation plate. The cover plate layer and the micro-channel layer are welded to form a locally-reinforced micro-channel slide glass, and then the locally-reinforced micro-channel slide glass is integrally arranged above the transition layer in an array form and is respectively connected with the liquid collecting and separating plate through welding; the high-power chips are arranged above the cover plate layer; the micro-channel layer comprises a liquid supply port, parallel micro-channels and a liquid return port; the transition layer is provided with array liquid supply ports and array liquid return ports which are in one-to-one correspondence with the micro-channel layers; the liquid collecting and separating layer is provided with a plurality of liquid supply static pressure cavities and liquid return static pressure cavities which are arranged in a staggered mode. The invention also provides a use method of the high-power curved antenna near-junction cooling device. A solution path is provided for heat dissipation of the high-power, high-integration and light-weight curved surface antenna, the design is reasonable, and the engineering realizability is high.

Description

Technical Field

[0001] This invention relates to the field of electronic device cooling technology, and in particular to a near-junction cooling device and method for using a high-power curved antenna. Background Technology

[0002] With the rapid development of electronic technology, the demand for high-power, highly integrated, and lightweight antennas is becoming increasingly urgent. Among them, curved antennas, due to their conformability to the mounting platform and their advantages such as low aerodynamic drag, good stealth performance, and high space utilization, are playing an increasingly important role in high-performance electronic devices. To further improve device performance, the power density of curved antennas continues to increase, leading to increasingly prominent heat dissipation problems for the chips, necessitating efficient heat dissipation methods.

[0003] Currently, high-power antennas typically employ a liquid-cooled heat dissipation architecture: the chip is soldered to the carrier and then soldered as a whole to the component housing, which is mounted on a metal cold plate, with interface materials filling the gaps. When the chip is operating, the heat it generates is conducted through the carrier, component housing, and interface materials to the metal cold plate, where it dissipates heat through convective heat exchange with the low-temperature coolant inside the cold plate.

[0004] For example, CN112670696A discloses an antenna liquid cooling plate, whose internal flow channels mainly consist of a water distribution cavity, parallel flow channels, and a water collection cavity. The water distribution cavity and water collection cavity are fabricated with randomly arranged flow disruptors to ensure uniform flow distribution in each parallel flow channel. The parallel flow channels are designed as two layers to increase the heat exchange area, with each layer having a series structure. CN110165355B discloses an antenna cooling plate that improves the local heat exchange capacity of the cooling plate by setting micro-pillar flow disruptors within a single-layer series-parallel flow channel.

[0005] Most of the liquid cooling architectures mentioned above are designed for planar antennas. When applied to high-power curved antennas, they will face the following challenges: 1) It is difficult to process complex microchannel features on curved cold plates, and the local reinforcement design of cold plates is limited; 2) The heat of the chip must pass through the carrier, component housing, and interface material before it can be transferred to the metal cold plate. The heat transfer path is long and the thermal resistance is large; 3) The irregular contact caused by the curved surface makes it difficult to fill the interface material evenly, and the interface thermal resistance problem is prominent; 4) The series flow channels lead to poor chip temperature uniformity.

[0006] Therefore, there is an urgent need to develop a curved surface-adaptive cooling design architecture and device to solve the heat dissipation problem of high-power curved antennas. Summary of the Invention

[0007] To address the existing technical problems, this invention provides a near-junction cooling device for a high-power curved antenna and a method for using it.

[0008] The specific contents of this invention are as follows: A near-junction cooling device for a high-power curved antenna, comprising, from top to bottom, a high-power chip, a cover plate layer, a microchannel layer, a transition layer, and a liquid distribution layer. The transition layer and the liquid distribution layer are connected by welding to form a fully parallel liquid distribution plate. The cover plate layer and the microchannel layer are welded to form a locally reinforced microchannel carrier, which is then arranged in an array above the transition layer and interconnected with the liquid distribution plate by welding. The high-power chip is arranged above the cover plate layer. The microchannel layer includes a liquid supply port, parallel microchannels, and a liquid return port. The transition layer has arrayed liquid supply ports and arrayed liquid return ports corresponding one-to-one with the microchannel layer. The liquid distribution layer has multiple staggered liquid supply static pressure chambers and liquid return static pressure chambers. One side of the liquid supply static pressure chamber is connected to the main liquid supply port and the other side is closed. One side of the liquid return static pressure chamber is connected to the main liquid return port and the other side is closed.

[0009] Furthermore, the high-power chip has a size of 2-4 mm, a thickness of 0.1-0.2 mm, and a single-chip heat flux density of 150-500 W / cm². 2 .

[0010] Furthermore, the arrangement of the high-power chip and the cover plate layer includes, but is not limited to, rectangular and circular shapes.

[0011] Furthermore, the cover plate layer is made of aluminum diamond, molybdenum copper, or copper molybdenum copper, and the microchannel layer, transition layer, and manifold layer are made of high thermal conductivity, low density aluminum alloy.

[0012] Furthermore, the parallel microchannels of the microchannel layer adopt a straight rib structure with a characteristic size of 0.2mm~0.4mm and an aspect ratio of 3~8; the liquid supply port and liquid return port adopt a circular hole structure, corresponding to a flow velocity of less than 1.5m / s.

[0013] Furthermore, the array of liquid supply ports and array of liquid return ports of the transition layer adopts a circular hole structure, corresponding to a flow rate of less than 1.5 m / s, and corresponds one-to-one with the liquid supply ports and liquid return ports of the microchannel layer and is arranged coaxially.

[0014] Furthermore, the channel area of ​​the liquid supply static pressure chamber and the liquid return static pressure chamber of the liquid distribution layer is matched with the flow rate, and the average flow velocity is less than 4m / s. A rib of 1~3mm is reserved between the liquid supply static pressure chamber and the liquid return static pressure chamber to separate the adjacent chambers.

[0015] The present invention also provides a method for using a near-junction cooling device for a high-power curved antenna, comprising the following steps: a low-temperature coolant enters each supply static pressure chamber from the main supply port, is distributed and then enters the array supply port, and subsequently enters the supply port, where it undergoes convective heat exchange with the high-power chip in the parallel microchannel. The high-temperature coolant, after absorbing the heat from the chip, enters the array return port through the return port and is collected in the return static pressure chamber, and finally flows out through the main return port. The heat generated by the high-power chip is conducted through the cover plate layer and then directly undergoes convective heat exchange with the low-temperature coolant in the microchannel layer.

[0016] This invention replaces the traditional series-connected remote cooling architecture with a fully parallel near-junction cooling architecture that includes a distribution plate and microchannel carriers. The direct welding interconnection between the microchannel carriers and the distribution plate greatly shortens the heat transfer path and eliminates interfacial thermal resistance. By integrating the microchannels into the small-scale carriers, the technological limitations of cross-scale processing of microchannel features on curved large plates are avoided. The local microchannel structure effectively enhances convective heat transfer, achieving high heat flux density heat dissipation at low flow rates. The distribution plate achieves uniform distribution of flow rate across the entire front surface, reducing flow resistance and improving temperature uniformity. Attached Figure Description

[0017] The invention will be further explained below with reference to the accompanying drawings.

[0018] Figure 1 This is a schematic diagram of the assembly structure of the near-junction cooling device for the high-power curved antenna of the present invention;

[0019] Figure 2 This is a schematic diagram of the microchannel layer structure of the present invention;

[0020] Figure 3 This is a schematic diagram of the transition layer of the present invention;

[0021] Figure 4 This is a schematic diagram of the liquid collection and distribution layer of the present invention;

[0022] Figure 5 This is a cross-sectional schematic diagram of the near-junction cooling device for the high-power curved antenna of the present invention.

[0023] Among them, 1-high power chip, 2-cover plate layer, 3-microchannel layer, 4-transition layer, 5-liquid collection layer, 6-liquid supply port, 7-parallel microchannel, 8-liquid return port, 9-array liquid supply port, 10-array liquid return port, 11-liquid supply static pressure chamber, 12-liquid return static pressure chamber, 13-main liquid supply port, 14-main liquid return port. Detailed Implementation

[0024] Combination Figures 1-5This invention discloses a near-junction cooling device for a high-power curved antenna. Its assembly structure, from top to bottom, comprises a high-power chip 1, a cover layer 2, a microchannel layer 3, a transition layer 4, and a liquid distribution layer 5. The cover layer 2 is made of materials with low thermal expansion coefficients, such as aluminum diamond, molybdenum copper, and copper-molybdenum copper. The microchannel layer 3, transition layer 4, and liquid distribution layer 5 are made of high thermal conductivity, low-density aluminum alloy. The transition layer 4 and liquid distribution layer 5 are connected by welding to form a fully parallel liquid distribution plate. After welding the cover layer 2 to the microchannel layer 3, a locally reinforced microchannel carrier is formed. The microchannel carrier is arranged in a 10×10 array above the transition layer 4 and interconnected with the liquid distribution plate by welding. Four high-power chips 1 are arranged in a 2×2 array above each cover layer 2. The high-power chips 1 have a size of 2-4 mm, a thickness of 0.1-0.2 mm, and a single-chip heat flux density of 150~500 W / cm². 2 The high-power chip 1 is fixed above the cover plate layer 2 using thermally conductive adhesive or high thermally conductive solder. The arrangement of the high-power chip 1 and the cover plate layer 2 includes, but is not limited to, rectangular, circular, or other forms. The cover plate layer 2 has a thickness of 0.5~1mm, the microchannel layer 3 has a thickness of 2.5~4mm, the transition layer 4 has a thickness of 1~2mm, the liquid collection layer 5 has a thickness of 2~3mm, the total thickness of the device is 6~10mm, and the side length is 100mm~1000mm.

[0025] Microchannel layer 3 structure as Figure 2 As shown, the microchannel layer 3 has parallel microchannel 7 structures corresponding to the chip positions to achieve enhanced local heat transfer. The parallel microchannel 7 adopts a straight rib structure with a feature size of 0.2mm~0.4mm and an aspect ratio of 3~8. By processing microchannels within a small-sized microchannel layer, the technological limitations of processing microchannel features across multiple scales on curved large-scale boards are avoided. The microchannel layer 3 is provided with a liquid supply port 6 and a liquid return port 8 that communicate with the transition layer. The liquid supply port 6 and the liquid return port 7 adopt a circular hole structure, which facilitates welding interconnection, and the corresponding flow velocity is less than 1.5m / s.

[0026] Transition layer 4 structure as follows Figure 3 As shown, the transition layer 4 is provided with arrayed liquid supply ports 9 and arrayed liquid return ports 10 that correspond one-to-one with the microchannel layer 3 and are arranged coaxially. The arrayed liquid supply ports 9 and arrayed liquid return ports 10 also adopt a circular hole structure, which facilitates welding interconnection and corresponds to a flow velocity of less than 1.5m / s.

[0027] The structure of the liquid-liquid layer 5 is as follows: Figure 4As shown, the liquid distribution layer 5 is provided with multiple staggered supply static pressure chambers 11 and return static pressure chambers 12 to achieve uniform distribution of flow rate across the entire surface and reduce the overall thickness. One side of the supply static pressure chamber 11 is connected to the main supply port 13, and the other side is closed. One side of the return static pressure chamber 12 is connected to the main return port 14, and the other side is closed. The channel area of ​​the supply static pressure chamber 11 and the return static pressure chamber 12 is matched with the flow rate to ensure that the average flow velocity is less than 4m / s. A rib of 1~3mm is reserved between the supply static pressure chamber 11 and the return static pressure chamber 12 to separate adjacent chambers.

[0028] This invention also discloses a method of using a near-junction cooling device for a curved antenna. The internal flow and heat transfer of this invention are illustrated below. Figure 5 As shown, combined with Figure 5 The process includes the following steps: Low-temperature coolant enters each supply static pressure chamber 11 from the main supply port 13, is distributed, and then enters the array supply port 9, followed by the supply port 6. It then undergoes convective heat exchange with the high-power chip 1 in the parallel microchannels 7. The high-temperature coolant, after absorbing heat from the chip, enters the array return port 10 through the return port 8 and converges into the return static pressure chamber 12, finally flowing out through the main return port 14. The heat generated by the high-power chip 1 is conducted through the cover plate layer 2 and then directly convects with the low-temperature coolant in the microchannel layer 3. Compared to traditional antenna array liquid-cooled architectures, this significantly shortens the heat transfer path, reduces conduction thermal resistance, and eliminates the obstruction of heat transfer by interface thermal resistance. The parallel microchannel 7 structure within the microchannel layer 3 achieves enhanced local heat exchange, enabling localized high heat flux density heat dissipation at low flow rates. The distribution plate formed by the distribution layer 5 and the transition layer 4 achieves uniform flow distribution across the entire array, reducing flow resistance and improving temperature uniformity.

[0029] This invention addresses the problems of traditional antenna cooling architectures, such as surface mismatch, long heat transfer paths, high interfacial thermal resistance, and poor temperature uniformity. It proposes a near-junction cooling device and method for high-power curved antennas, employing a fully parallel near-junction cooling architecture of a liquid distribution plate and a microfluidic carrier. Direct welding between the microfluidic carrier and the liquid distribution plate significantly shortens the heat transfer path and eliminates interfacial thermal resistance. Integrating microchannels into a small-scale carrier avoids the technological limitations of cross-scale microfluidic channel fabrication on large curved plates. The local microfluidic structure effectively enhances convective heat transfer, achieving high heat flux density heat dissipation at low flow rates. The liquid distribution structure ensures uniform flow distribution across the entire array surface, reducing flow resistance and improving temperature uniformity. This invention provides a solution for heat dissipation of high-power, highly integrated, and lightweight curved antennas. It is rationally designed and highly feasible in engineering. Compared to traditional series-connected long-range cooling architectures, it improves heat dissipation capacity by 3 times, reduces flow resistance by 40%, improves temperature uniformity by 50%, and reduces thickness by 40%.

[0030] Many specific details have been set forth in the foregoing description to provide a thorough understanding of the present invention. However, the above description is merely a preferred embodiment of the present invention, and the present invention can be implemented in many other ways different from those described herein. Therefore, the present invention is not limited to the specific embodiments disclosed above. Furthermore, any person skilled in the art can make many possible variations and modifications to the technical solutions of the present invention, or modify them into equivalent embodiments, using the methods and techniques disclosed above, without departing from the scope of the present invention. Any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of the present invention, without departing from the content of the present invention, shall still fall within the protection scope of the present invention.

Claims

1. A near-junction cooling device for a high-power curved antenna, characterized in that: From top to bottom, the system comprises a high-power chip (1), a cover plate layer (2), a microchannel layer (3), a transition layer (4), and a liquid collection layer (5). The transition layer (4) and the liquid collection layer (5) are connected by welding to form a fully parallel liquid collection plate. The cover plate layer (2) and the microchannel layer (3) are welded together to form a locally reinforced microchannel carrier, which is then arranged in an array above the transition layer (4) and interconnected with the liquid collection plate by welding. The high-power chip (1) is arranged above the cover plate layer (2). The microchannel layer (3) includes a liquid supply port (6), parallel microchannels (7) and a liquid return port (8); the transition layer (4) is provided with an array of liquid supply ports (9) and an array of liquid return ports (10) corresponding to the microchannel layer (3); the liquid collection and distribution layer (5) is provided with multiple liquid supply static pressure chambers (11) and liquid return static pressure chambers (12) arranged in an alternating manner. One side of the liquid supply static pressure chamber (11) is connected to the main liquid supply port (13) and the other side is closed. One side of the liquid return static pressure chamber (12) is connected to the main liquid return port (14) and the other side is closed.

2. The near-junction cooling device for a high-power curved antenna according to claim 1, characterized in that: The high-power chip (1) has a size of 2-4 mm and a thickness of 0.1-0.2 mm, with a single-chip heat flux density of 150~500 W / cm². 2 .

3. The near-junction cooling device for a high-power curved antenna according to claim 1, characterized in that: The arrangement of the high-power chip (1) and the cover plate layer (2) includes, but is not limited to, rectangular and circular shapes.

4. The near-junction cooling device for a high-power curved antenna according to claim 1, characterized in that: The cover plate layer (2) is made of aluminum diamond, molybdenum copper or copper molybdenum copper, and the microchannel layer (3), transition layer (4) and liquid collection layer (5) are made of high thermal conductivity, low density aluminum alloy.

5. The near-junction cooling device for a high-power curved antenna according to claim 1, characterized in that: The parallel microchannels (7) of the microchannel layer (3) adopt a straight rib structure with a characteristic size of 0.2mm~0.4mm and an aspect ratio of 3~8; the liquid supply port (6) and the liquid return port (7) adopt a circular hole structure with a corresponding flow velocity of less than 1.5m / s.

6. The near-junction cooling device for a high-power curved antenna according to claim 1, characterized in that: The array of liquid supply ports (9) and array of liquid return ports (10) of the transition layer (4) adopts a circular hole structure, corresponding to a flow rate of less than 1.5 m / s, and corresponds one-to-one with the liquid supply ports (6) and liquid return ports (8) of the microchannel layer (3) and is arranged coaxially.

7. The near-junction cooling device for a high-power curved antenna according to claim 1, characterized in that: The channel area of ​​the liquid supply static pressure chamber (11) and the liquid return static pressure chamber (12) of the liquid collection layer (5) is matched with the flow rate, and the average flow velocity is less than 4m / s. A rib of 1~3mm is reserved between the liquid supply static pressure chamber (11) and the liquid return static pressure chamber (12) to separate the adjacent chambers.

8. A method of using a near-junction cooling device for a high-power curved antenna, characterized in that: The near-junction cooling device for a high-power curved antenna as described in any one of claims 1 to 7 includes the following steps: a low-temperature coolant enters each supply static pressure chamber (11) from the main supply port (13), is distributed and then enters the array supply port (9), and subsequently enters the supply port (6), and undergoes convective heat exchange with the high-power chip (1) in the parallel microchannel (7). The high-temperature coolant, after absorbing the heat from the chip, enters the array return port (10) through the return port (8) and is collected in the return static pressure chamber (12), and finally flows out through the main return port (14). The heat generated by the high-power chip (1) is conducted through the cover plate layer (2) and then directly undergoes convective heat exchange with the low-temperature coolant in the microchannel layer (3).

Images