Crystalline silicon cell processing device and processing method

Abstract

The invention relates to a crystalline silicon cell processing device and processing method. The crystalline silicon cell processing device comprises a coating device, a conveying mechanism, a distance measuring piece and a distance adjusting piece, wherein the coating device comprises a coating head. The conveying mechanism is used for conveying the bearing table bearing the silicon wafer to the coating equipment. The distance measuring piece is arranged on one side of the coating equipment and used for detecting the distance between the silicon wafer on the bearing table and the coating head in the direction perpendicular to the coating face of the silicon wafer. The distance adjusting piece is arranged between the bearing table and the conveying mechanism, is in communication connection with the distance measuring piece and is used for adjusting the position of the bearing table in the direction perpendicular to the coating surface of the silicon wafer according to distance information detected by the distance measuring piece. During continuous coating operation, distance measuring and distance adjusting operation is carried out on each bearing table conveyed to the coating equipment, so that the silicon wafers borne by the bearing tables are kept at the same distance with a coating head during coating, the coating thicknesses of all the coated silicon wafers are kept consistent, and the consistency of the quality of finished products is improved.

Description

Technical Field

[0001] This application relates to the field of perovskite crystalline silicon solar cell fabrication technology, and in particular to crystalline silicon solar cell processing apparatus and processing methods. Background Technology

[0002] With the rapid development of solar crystalline silicon cells, they have been widely used in power generation, transportation, communication, agriculture and other fields, and therefore the demand for solar crystalline silicon cells has also grown rapidly.

[0003] In the processing of solar crystalline silicon cells, silicon wafers undergo coating, crystallization, and pre-curing. During these processes, the silicon wafers are typically placed on a support platform and moved along with it. When continuously coating the silicon wafers, inconsistencies in coating thickness occur on different support platforms, resulting in poor consistency of the finished product. Summary of the Invention

[0004] Therefore, it is necessary to provide a crystalline silicon cell processing apparatus and processing method to address the problem of inconsistent coating thickness during continuous coating of silicon wafers.

[0005] In a first aspect, this application provides a crystalline silicon cell processing apparatus, the crystalline silicon cell processing apparatus comprising:

[0006] Coating equipment, including coating head;

[0007] A conveying mechanism is used to transport a support platform carrying silicon wafers to the coating equipment;

[0008] A distance measuring device is disposed on one side of the coating equipment; the distance measuring device is used to detect the distance between the silicon wafer on the support platform and the coating head in the direction perpendicular to the coating surface of the silicon wafer;

[0009] A distance adjustment component is disposed between the support platform and the conveying mechanism and is communicatively connected to the distance measuring component; the distance adjustment component is used to adjust the position of the support platform in the direction perpendicular to the coating surface of the silicon wafer according to the distance information detected by the distance measuring component.

[0010] In one embodiment, the conveying mechanism includes:

[0011] An operating platform is provided for placing the support platform. The distance adjustment component is located between the support platform and the operating platform and is capable of lifting the support platform.

[0012] In one embodiment, the operating platform is provided with multiple processing stations, and the coating device is located at one of the processing stations; and the operating platform is capable of driving the carrier platform to move between the multiple processing stations.

[0013] In one embodiment, the operating platform is provided with a conveyor rail, and the carrier platform is disposed on the conveyor rail, which can sequentially convey the carrier platform to multiple processing stations.

[0014] In one embodiment, the conveying mechanism further includes:

[0015] A rotary drive unit, the drive end of which is connected to the operating platform, and the connection point between the rotary drive unit and the operating platform is located between the plurality of processing stations, is used to drive the operating platform to rotate so that the carrier on the operating platform moves between the plurality of processing stations.

[0016] In one embodiment, the plurality of processing stations are respectively a pick-and-place station, a coating station, a crystallization station, and a pre-curing station, and the pick-and-place station, the coating station, the crystallization station, and the pre-curing station are arranged sequentially along the conveying direction of the conveying mechanism.

[0017] In one embodiment, the support platform is provided with a temperature regulating structure, which is used to adjust the temperature of the support surface of the support platform.

[0018] In one embodiment, the temperature regulating structure is configured as a cooling water channel disposed inside the support platform, the cooling water channel being arranged in a tortuous manner in a plane parallel to the support surface;

[0019] The cooling water channel is connected to a chiller, which circulates cooling water into the cooling water channel.

[0020] In one embodiment, the cooling water channel includes a first water channel and a second water channel that are connected to each other. The first water channel and the second water channel are arranged in parallel. The end of the first water channel away from the connection point with the second water channel is provided with an inlet. The end of the second water channel away from the connection point with the first water channel is provided with an outlet. Cooling water enters the first water channel from the inlet, flows through the second water channel, and then flows out from the outlet.

[0021] In one embodiment, the support platform is provided with a plurality of support positions, each of which supports one silicon wafer;

[0022] The surface of the support platform is provided with an adsorption tank corresponding to each of the support positions, and the bottom of the adsorption tank is provided with an air extraction hole, which is connected to a vacuum device.

[0023] In one embodiment, the adsorption tank includes:

[0024] The main adsorption tank extends along the center line of the bearing position, and the bottom of the main adsorption tank is provided with a plurality of air extraction holes along its extending direction.

[0025] Multiple branch adsorption tanks, one end of which is connected to the main adsorption tank and the other end is connected to the edge of the bearing position; the branch adsorption tanks are set at an angle to the main adsorption tank.

[0026] In one embodiment, the bearing surface of the bearing platform is a plane, and the silicon wafers on adjacent bearing positions can be fitted together or maintain a preset gap.

[0027] Secondly, this application also provides a method for processing crystalline silicon solar cells, comprising the following steps:

[0028] Place the silicon wafer to be coated onto the support stage;

[0029] The carrier platform carrying the silicon wafer is placed on the conveying mechanism;

[0030] Control the conveying mechanism to transport the carrier platform to the coating equipment;

[0031] The distance measuring device is controlled to detect the distance between the silicon wafer and the coating head of the coating equipment in the direction perpendicular to the coating surface of the silicon wafer;

[0032] If the detected distance information meets the set requirements, the coating equipment is controlled to coat the silicon wafer; if the detected distance information does not meet the set requirements, the distance adjustment mechanism is activated to adjust the position of the support platform in the coating surface direction of the silicon wafer until the distance information meets the set requirements, and then the coating equipment is controlled to coat the silicon wafer.

[0033] Repeat the above steps until all the silicon wafers have been coated.

[0034] The aforementioned crystalline silicon cell processing apparatus uses a conveying mechanism to transport a carrier platform carrying silicon wafers to a coating device. Before coating the silicon wafers, the coating device first detects the distance between the silicon wafer and the coating head in the direction perpendicular to the coating surface of the silicon wafer using a distance measuring device, and then adjusts the position of the carrier platform in the direction perpendicular to the coating surface of the silicon wafer using a distance adjusting device, thereby adjusting the distance between the coating surface of the silicon wafer and the coating head of the coating device. During continuous coating operations, the above-mentioned distance measuring and adjustment operations are performed on each carrier platform transported to the coating device to ensure that each carrier platform maintains the same distance from the coating head during coating, thus ensuring that the coating thickness of all silicon wafers is consistent and improving the consistency of finished product quality. Attached Figure Description

[0035] Figure 1This is a schematic diagram of the crystalline silicon cell processing apparatus in Embodiment 1 of this application;

[0036] Figure 2 This is a schematic diagram of the coating equipment and support platform in Embodiment 1 of this application;

[0037] Figure 3 This is a partial structural schematic diagram of the crystalline silicon cell processing apparatus in Embodiment 1 of this application;

[0038] Figure 4 This is a schematic diagram of the structure of the support platform in Embodiment 1 of this application when it supports a silicon wafer;

[0039] Figure 5 This is a top view of the support platform in Embodiment 1 of this application;

[0040] Figure 6 This is a schematic diagram of the structure of a single bearing position on the bearing platform in Embodiment 1 of this application;

[0041] Figure 7 This is a cross-sectional view of a single bearing position on the bearing platform in Embodiment 1 of this application;

[0042] Figure 8 This is a side view of the support platform in Embodiment 1 of this application;

[0043] Figure 9 for Figure 8 Sectional view at CC;

[0044] Figure 10 This is a schematic diagram of the crystalline silicon cell processing apparatus in Embodiment 2 of this application.

[0045] Explanation of reference numerals in the attached figures:

[0046] 100. Silicon wafers;

[0047] 1. Coating equipment;

[0048] 2. Conveying mechanism; 21. Operating platform; 211. Coating station; 212. Crystallization station; 213. Pre-curing station; 214. Pick-and-place station; 22. Conveying track; 23. Rotary drive component;

[0049] 3. Support platform; 31. Cooling water channel; 311. First water channel; 3110. Water inlet; 312. Second water channel; 3120. Water outlet; 32. Support position; 33. Adsorption tank; 331. Main adsorption tank; 332. Branch adsorption tank; 34. Air extraction hole; 35. Support plate;

[0050] 4. Distance measuring device;

[0051] 5. Distance adjustment components;

[0052] 61. Feeding mechanism; 62. Unloading mechanism;

[0053] 7. Lifting limit block. Detailed Implementation

[0054] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0055] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0056] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0057] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0058] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0059] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0060] Example 1:

[0061] See Figures 1-3 , Figure 1 A schematic diagram of the crystalline silicon cell processing apparatus in Embodiment 1 of this application is shown; Figure 2 This shows a schematic diagram of the coating equipment 1 and the support platform 3 in Embodiment 1 of this application; Figure 3 A partial structural schematic diagram of the crystalline silicon cell processing apparatus according to Embodiment 1 of this application is shown. This application provides a crystalline silicon cell processing apparatus, which includes a coating device 1, a conveying mechanism 2, a distance measuring element 4, and a distance adjusting element 5. The coating device 1 includes a coating head. The conveying mechanism 2 is used to convey a support platform 3 carrying a silicon wafer 100 to the coating device 1. The distance measuring element 4 is disposed on one side of the coating device 1 and is used to detect the distance between the silicon wafer 100 on the support platform 3 and the coating head in the direction perpendicular to the coating surface of the silicon wafer 100. The distance adjusting element 5 is disposed between the support platform 3 and the conveying mechanism 2 and is communicatively connected to the distance measuring element 4. It is used to adjust the position of the support platform 3 in the direction perpendicular to the coating surface of the silicon wafer 100 according to the distance information detected by the distance measuring element 4, so that a certain distance is maintained between the silicon wafer 100 and the coating head. The coating device 1 can adopt a conventional structure; its specific structural form and working principle are not limited here and will not be described in detail. In some embodiments, the ranging element 4 is connected to the coating equipment 1. Of course, an additional support structure can also be provided to install the ranging element 4, which is not limited here.

[0062] The crystalline silicon cell processing apparatus provided in this application embodiment transports a carrier platform 3 carrying a silicon wafer 100 to a coating equipment 1 via a conveying mechanism 2. Before coating the silicon wafer 100, the coating equipment 1 first detects the distance between the silicon wafer 100 and the coating head in the direction perpendicular to the coating surface of the silicon wafer 100 using a distance measuring device 4, and adjusts the position of the carrier platform 3 in the direction perpendicular to the coating surface of the silicon wafer 100 using a distance adjusting device 5, thereby adjusting the distance between the coating surface of the silicon wafer 100 and the coating head of the coating equipment 1. During continuous coating operations, the above-mentioned distance measuring and adjustment operations are performed on each carrier platform 3 transported to the coating equipment 1, so that the silicon wafer 100 carried by each carrier platform 3 maintains the same distance from the coating head during coating, thereby ensuring that the coating thickness of all silicon wafers 100 is consistent after coating, which is beneficial to improving the consistency of finished product quality.

[0063] Specifically, the support platform 3 is set as a marble platform, which can be configured as a cuboid structure.

[0064] In some embodiments, the conveying mechanism 2 includes an operating platform 21 for placing the carrier platform 3. A distance adjustment member 5 is disposed between the carrier platform 3 and the operating platform 21, which can lift the carrier platform 3 to adjust the height of the carrier surface of the carrier platform 3.

[0065] Optionally, the distance adjustment component 5 can be configured as a cylinder, with its fixed end connected to the side of the support platform 3 facing the operating platform 21, and its output end facing the operating platform 21. During the movement of the support platform 3 along the operating platform 21, the output end of the cylinder retracts to avoid the operating platform 21, allowing the support platform 3 to move smoothly. When the support platform 3 is in position, the output end of the cylinder extends, abuts against the operating platform 21, and lifts the support platform 3. The height of the support platform 3 can be adjusted by adjusting the extension length.

[0066] It is understandable that the distance adjustment component 5 can also adopt a linear drive structure such as an electric cylinder or a lead screw module, which can drive the support platform 3 to rise and fall relative to the operating platform 21. The specific structural form is not limited here.

[0067] In some embodiments, the operating platform 21 is provided with multiple processing stations, the coating device 1 is located at one of the processing stations, and the operating platform 21 can drive the carrier platform 3 to move between the multiple processing stations. This configuration enables multi-process treatment of the silicon wafer 100.

[0068] Specifically, the multiple processing stations are a pick-and-place station 214, a coating station 211, a crystallization station 212, and a pre-curing station 213, which are arranged sequentially along the conveying direction of the conveying mechanism 2. At the pick-and-place station 214, silicon wafers 100 are loaded and unloaded. A coating device 1 is installed at the coating station 211 to coat the silicon wafers 100. A VCD (vacuum chemical vapor deposition) device is installed at the crystallization station 212 to crystallize the coated silicon wafers 100. A pre-annealing device is installed at the pre-curing station 213 to pre-anneal the crystallized silicon wafers 100. By integrating the coating equipment 1, VCD equipment, and pre-annealing equipment, and using the conveying mechanism 2 to transport the silicon wafer 100 to each equipment for sequential processing, the transfer of the silicon wafer 100 between the equipment is reduced, the connection speed of the coating, crystallization, and pre-curing processes is improved, and the preparation efficiency of the silicon wafer 100 is greatly increased. The coating equipment 1, VCD equipment, and pre-annealing equipment can all be mature devices from existing technologies; their specific structures and working principles will not be elaborated here.

[0069] In some embodiments, in order to realize the transfer of the carrier platform 3 between various processing stations on the operating platform 21, the operating platform 21 is provided with a conveyor rail 22, the carrier platform 3 is placed on the conveyor rail 22, and the conveyor rail 22 can sequentially transport the carrier platform 3 to multiple processing stations.

[0070] Optionally, the operating platform 21 is configured as a rectangular structure, and the conveying track 22 is arranged in a ring on the operating platform 21. The carrier platform 3 can move around the operating platform 21 along the conveying track 22 to complete the loading, coating, crystallization, pre-curing and unloading operations of the silicon wafer 100 it carries in sequence. Specifically, the pick-and-place station 214, coating station 211, crystallization station 212 and pre-curing station 213 are respectively arranged on one side of the operating platform 21.

[0071] In some embodiments, the crystalline silicon cell processing apparatus further includes a loading mechanism 61 and a unloading mechanism 62, both of which are located near the pick-and-place station 214, to load the silicon wafer 100 onto the support platform 3 at the pick-and-place station 214, or to remove the processed silicon wafer 100 from the support platform 3 at the pick-and-place station 214.

[0072] Specifically, the loading mechanism 61 and the unloading mechanism 62 can adopt the same structure, including a material box, a vision recognition device, and a robotic arm. For the loading mechanism 61, the robotic arm takes out the silicon wafer 100 from the material box, the vision recognition device identifies the posture of the silicon wafer 100 on the robotic arm, and then places the silicon wafer 100 on the carrier platform 3 in a certain arrangement, ensuring the consistency of the distance between the silicon wafers 100. For the unloading mechanism 62, the vision recognition device identifies the posture of the silicon wafer 100 on the carrier platform 3 at the pick-and-place station 214, the robotic arm picks up the silicon wafer 100 on the carrier platform 3, and then places it into the material box for storage.

[0073] Optionally, the feeding mechanism 61 and the unloading mechanism 62 can share a single robotic arm.

[0074] Optionally, the loading mechanism 61 and the unloading mechanism 62 may be equipped with multiple robotic arms, which can simultaneously perform loading or unloading operations on the silicon wafer 100 to improve the loading or unloading efficiency and match the processing rhythm of subsequent processes.

[0075] Please continue reading. Figure 3 In some embodiments, the ranging element 4 may be a laser ranging sensor, disposed on one side of the bearing surface of the bearing platform 3. Multiple ranging elements 4 may be disposed to detect multiple points on the bearing platform 3, thereby improving the reliability and accuracy of distance measurement.

[0076] Optionally, the ranging element 4 is fixed by a bracket, which can be mounted on the operating platform 21, avoiding the movement path of the carrier platform 3 to prevent interference with its movement. Alternatively, the bracket can be located outside the operating platform 21, bent towards the upper side of the operating platform 21, and connected to the ranging element 4, so that the ranging element 4 can be aligned with the silicon wafer 100 on the carrier platform 3.

[0077] In some embodiments, the crystalline silicon cell processing apparatus further includes a lifting limit block 7, which is disposed at the coating station 211 and located above the support platform 3, for limiting the lifting height of the support platform 3.

[0078] Please refer to the following: Figure 4 , Figure 4 This diagram illustrates the structure of the support platform 3 carrying the silicon wafer 100 in Embodiment 1 of this application. In some embodiments, a supporting plate 35 is provided on the support platform 3. The supporting plate 35 is disposed opposite to both ends of the support platform 3 to abut and limit the silicon wafer 100, which helps to improve the uniformity of the film layer formed by the two rows of silicon wafers 100 adjacent to the supporting plate 35.

[0079] Please see Figures 4-6 , Figure 5 A top view of the support platform 3 in Embodiment 1 of this application is shown; Figure 6A schematic diagram of the structure of a single bearing position 32 on the bearing platform 3 in Embodiment 1 of this application is shown.

[0080] In some embodiments, the support platform 3 is provided with multiple support positions 32, each support position 32 corresponding to a silicon wafer 100; the surface of the support platform 3 is provided with an adsorption groove 33 corresponding to each support position 32, and the bottom of the adsorption groove 33 is provided with an extraction hole 34, which is connected to a vacuum device. By providing multiple support positions 32 on the support platform 3, multiple silicon wafers 100 can be carried at one time. That is to say, multiple silicon wafers 100 can be processed at each processing station at one time, which has high processing efficiency. Moreover, when multiple silicon wafers 100 are placed on the same support platform 3, the deviation in the height direction is relatively small, and the distance deviation between each silicon wafer 100 and the coating head is small, resulting in high consistency of coating effect.

[0081] Specifically, multiple bearing positions 32 are arranged in a matrix pattern with multiple rows and columns on the bearing platform 3.

[0082] Optionally, the bearing surface of the bearing platform 3 is a plane, and the silicon wafers 100 on adjacent bearing positions 32 can be in contact with each other or maintain a preset gap. The smaller the gap between the silicon wafers 100, the better it is to prevent the liquid strip from breaking during coating, thereby improving the coating effect.

[0083] Please see Figure 6 and Figure 7 , Figure 7 A cross-sectional view of a single bearing position 32 on the bearing platform 3 in Embodiment 1 of this application is shown. In some embodiments, the adsorption tank 33 includes a main adsorption tank 331 and multiple branch adsorption tanks 332. The main adsorption tank 331 extends along the centerline of the bearing position 32, and multiple suction holes 34 are provided on the bottom of the main adsorption tank 331 along its extending direction. One end of the branch adsorption tank 332 is connected to the main adsorption tank 331, and the other end is connected to the edge of the bearing position 32; the branch adsorption tank 332 is set at an angle to the main adsorption tank 331. This arrangement forms a dense adsorption network, increasing the adsorption area of ​​the silicon wafer 100. Through vacuum adsorption, the adhesion between the silicon wafer 100 and the bearing platform 3 can be greatly enhanced, reducing the undulations on the surface of the silicon wafer 100 and increasing its flatness, thereby further improving the coating effect of the silicon wafer 100.

[0084] Specifically, the main adsorption tank 331 has two perpendicular and intersecting sections, and each main adsorption tank 331 has multiple branch adsorption tanks 332. The branch adsorption tanks 332 form an acute angle with the main adsorption tanks 331, and the multiple branch adsorption tanks 332 are parallel to each other, so that the adsorption tank 33 as a whole presents a dense herringbone network, which forms a good adsorption and fixation effect on the silicon wafer 100.

[0085] Please refer to the following: Figures 7-9 , Figure 8 A side view of the support platform 3 in Embodiment 1 of this application is shown; Figure 9 It shows Figure 8 Sectional view at point CC.

[0086] In some embodiments, the support platform 3 is provided with a temperature regulating structure, which is used to adjust the temperature of the support surface of the support platform 3 to maintain temperature uniformity, thereby improving the coating effect of the silicon wafer 100. At the same time, during the transfer of the silicon wafer 100, the temperature of the silicon wafer 100 itself can be controlled by the temperature regulating structure to prevent the silicon wafer 100 from being disturbed by the ambient temperature.

[0087] In some embodiments, the temperature control structure is configured as a cooling water channel 31 disposed inside the support platform 3, the cooling water channel 31 being tortuously arranged in a plane parallel to the support surface; the cooling water channel 31 is connected to a chiller, which circulates cooling water into the cooling water channel 31. By setting up the cooling water channel 31 and circulating cooling water into the cooling water channel 31 through the chiller, more uniform cooling is provided to the support platform 3. By tortuously arranging the cooling water channel 31, the length and coverage area of ​​the cooling water channel 31 are increased, thereby further improving the cooling uniformity.

[0088] Specifically, the cooling water channel 31 is arranged in an S-shape, covering the plane parallel to the bearing surface inside the bearing platform 3, and has good cooling uniformity.

[0089] Optionally, multiple cooling water channels 31 are provided, each with independent flow and a shorter flow path, which is more conducive to controlling the temperature rise of the cooling water within the cooling water channel 31. In this embodiment, two independent cooling water channels 31 are provided. The more cooling water channels 31 provided, the smaller the temperature rise of the cooling water and the better the cooling effect. In practice, the number of cooling water channels 31 can be specifically set according to the size of the bearing surface of the support platform 3.

[0090] In some embodiments, the cooling water channel 31 includes a first channel 311 and a second channel 312 that are connected to each other. The first channel 311 and the second channel 312 are arranged parallel to each other. The end of the first channel 311 away from the connection point with the second channel 312 is provided with an inlet 3110, and the end of the second channel 312 away from the connection point with the first channel 311 is provided with an outlet 3120. Cooling water enters the first channel 311 from the inlet 3110, flows through the second channel 312, and flows out from the outlet 3120. As the cooling water flows sequentially through the first channel 311 and the second channel 312, the water temperature gradually increases. By arranging the first channel 311 and the second channel 312 in parallel and extending in the same direction, the water temperature of the cooling water is made more uniform, resulting in better cooling uniformity compared to a scheme where the cooling water channel 31 is arranged in a single direction.

[0091] Based on the above-described crystalline silicon cell processing apparatus, this application also provides a crystalline silicon cell processing method, which specifically includes the following steps:

[0092] S1: Place the silicon wafer 100 to be coated onto the support stage 3.

[0093] Specifically, the silicon wafer 100 to be coated is placed on the carrier platform 3 at the pick-and-place station 214 by the feeding mechanism 61.

[0094] S2: Place the carrier platform 3 carrying the silicon wafer 100 onto the conveying mechanism 2.

[0095] Specifically, the support platform 3 is placed on the conveyor track 22.

[0096] S3: Control the conveying mechanism 2 to move the carrier platform 3 to the coating equipment 1.

[0097] Specifically, the carrier platform 3 is moved to the coating station 211 by the conveyor rail 22.

[0098] S4: Control the ranging device 4 to detect the distance between the silicon wafer 100 and the coating head in the direction perpendicular to the coating surface of the silicon wafer 100;

[0099] If the detected distance information meets the set requirements, the coating equipment 1 is controlled to coat the silicon wafer 100; if the detected distance information does not meet the set requirements, the distance adjustment component 5 is activated to adjust the position of the support platform 3 in the coating surface direction of the silicon wafer 100 until the distance information meets the set requirements, and then the coating equipment 1 is controlled to coat the silicon wafer 100.

[0100] S5: Repeat the above steps until all silicon wafers are coated.

[0101] Example 2:

[0102] Please see Figure 10 , Figure 10 A schematic diagram of the crystalline silicon cell processing apparatus in Embodiment 2 of this application is shown. Embodiment 2 of this application provides a crystalline silicon cell processing apparatus, which is basically the same in structure and working principle as the crystalline silicon cell processing apparatus in Embodiment 1, except that the specific structure of the conveying mechanism 2 is different.

[0103] Specifically, the conveying mechanism 2 includes an operating platform 21 and a rotary drive 23. The drive end of the rotary drive 23 is connected to the operating platform 21, and the connection point between the rotary drive 23 and the operating platform 21 is located between multiple processing stations. It is used to drive the operating platform 21 to rotate, thereby moving the support platform 3 on the operating platform 21 between the multiple processing stations. By driving the operating platform 21 to rotate, the support platform 3 on the operating platform 21 is transferred to each processing station.

[0104] Alternatively, the rotary drive 23 may be a rotary cylinder or other rotary drive structure.

[0105] In this embodiment, the positions of the pick-and-place station 214, coating station 211, crystallization station 212, and pre-curing station 213 are fixed. The operating platform 21 is provided with four placement positions for the support platform 3. By driving the operating platform 21 to rotate, the four placement positions are respectively aligned with the pick-and-place station 214, coating station 211, crystallization station 212, and pre-curing station 213, so that each process can be performed simultaneously.

[0106] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0107] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A crystalline silicon cell processing apparatus characterized by comprising: The crystalline silicon cell processing device comprises: A coating device comprising a coating head; A conveying mechanism for conveying a carrier table carrying a silicon wafer to the coating device; A distance measuring member arranged on one side of the coating device, the distance measuring member being configured to detect the distance between the silicon wafer on the carrier table and the coating head in a direction perpendicular to the coating surface of the silicon wafer; A distance adjusting member arranged between the carrier table and the conveying mechanism and in communication with the distance measuring member, the distance adjusting member being configured to adjust the position of the carrier table in the direction perpendicular to the coating surface of the silicon wafer according to the distance information detected by the distance measuring member.

2. The crystalline silicon cell processing apparatus according to claim 1, characterized by The conveying mechanism comprises: An operation platform for placing the carrier table, the distance adjusting member being arranged between the carrier table and the operation platform and capable of jacking up the carrier table.

3. The crystalline silicon cell processing apparatus according to claim 2, characterized by The operation platform is provided with a plurality of processing stations, the coating device being arranged at one of the processing stations, and the operation platform being capable of driving the carrier table to move between the processing stations.

4. The crystalline silicon cell processing apparatus according to claim 3, characterized by The plurality of processing stations are respectively a taking and placing station, a coating station, a crystallization station and a pre-solidification station, the taking and placing station, the coating station, the crystallization station and the pre-solidification station being arranged in sequence along the conveying direction of the conveying mechanism.

5. The crystalline silicon cell processing apparatus according to any one of claims 1 to 4, characterized by The carrier table is provided with a temperature adjusting structure for adjusting the temperature of the carrying surface of the carrier table.

6. The crystalline silicon cell processing apparatus according to claim 5, wherein The temperature adjusting structure is configured as a cooling water channel arranged inside the carrier table, the cooling water channel being arranged in a zigzag manner in a plane parallel to the carrying surface; The cooling water channel is connected to a cold water machine for circulating and inputting cooling water into the cooling water channel.

7. The crystalline silicon cell processing apparatus according to claim 6, characterized by The cooling water channel comprises a first water channel and a second water channel in communication, the first water channel and the second water channel being arranged in parallel, one end of the first water channel away from the communication point with the second water channel being provided with a water inlet, one end of the second water channel away from the communication point with the first water channel being provided with a water outlet, cooling water entering the first water channel from the water inlet and flowing out of the water outlet after flowing through the second water channel.

8. The crystalline silicon cell processing apparatus according to any one of claims 1 to 4, characterized by The carrier table is provided with a plurality of carrying positions, each of the carrying positions carrying one silicon wafer; The surface of the carrier table is provided with a suction groove corresponding to each of the carrying positions, the groove bottom of the suction groove being provided with a suction hole, the suction hole being in communication with a vacuum device.

9. The crystalline silicon cell processing apparatus according to claim 8, characterized by The suction groove comprises: A main suction groove extending along the center line of the carrying position, the groove bottom of the main suction groove being provided with a plurality of suction holes along the extension direction thereof; A plurality of branch suction grooves, one end of each of the branch suction grooves being connected to the main suction groove, and the other end being connected to the edge of the carrying position, the branch suction grooves being arranged at an angle with the main suction groove.

10. A method of processing a crystalline silicon cell, characterized by, The method comprises the following steps: Placing a silicon wafer to be coated on a carrier table; Placing the carrier table carrying the silicon wafer on a conveying mechanism; Controlling the conveying mechanism to convey the carrier table to a coating device; Controlling a distance measuring member to detect the distance between the silicon wafer and the coating head of the coating device in a direction perpendicular to the coating surface of the silicon wafer; If the detected distance information meets the set requirement, the coating equipment is controlled to coat the silicon wafer; If the detected distance information does not meet the set requirement, a distance adjusting member is started to adjust the position of the supporting table in the direction of the coating surface of the silicon wafer until the distance information meets the set requirement, and then the coating equipment is controlled to coat the silicon wafer; The above steps are repeated until all the silicon wafers are coated.

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