Method of forming gallium-containing film

Abstract

An embodiment of the present disclosure relates to a method of forming a gallium-containing film on a substrate on which at least one of a metal film, a silicon (Si) film, a silicon oxide (SiO) film, and a silicon nitride (SiN) film is formed. The method may include the steps of: preparing a substrate; spraying a gallium (Ga)-containing source gas onto the substrate; and spraying a nitrogen (N)-containing reaction gas onto the substrate, thereby forming a first gallium nitride (GaN) film on the silicon film and / or the silicon nitride film of the substrate. Therefore, according to an embodiment of the present disclosure, a gallium nitride film or a gallium oxide film can be easily formed. That is, a gallium nitride film or a gallium oxide film may be grown in one direction on a silicon (Si) substrate. Accordingly, it is possible to form a gallium nitride film or a gallium oxide film in which the occurrence of defects is suppressed, such that the characteristics of a semiconductor device to which the gallium nitride film or the gallium oxide film is applied are improved.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a method of forming a gallium-containing film, and more particularly, to a method of forming a gallium-containing film that can easily form a gallium-containing film. BACKGROUND

[0002] Power semiconductor devices are manufactured by depositing a semiconductor compound on a silicon (Si) wafer. Gallium nitride (GaN) has a wide energy gap and has a high electron mobility, and thus is attracting attention as a material for manufacturing high-speed, low-loss, and high-efficiency power semiconductors.

[0003] On the other hand, in forming a gallium nitride (GaN) film or a gallium oxide (GaO) film, there are cases in which the gallium nitride (GaN) film or the gallium oxide (GaO) film is directly formed on a silicon (Si) wafer, but there are also cases in which the gallium nitride film is formed on a silicon nitride (SiN) film or the gallium oxide film is formed on a silicon oxide (SiO) film.

[0004] If the method according to the exemplary embodiment is used, a gallium-containing film such as a gallium nitride film or a gallium oxide film can be easily formed.

[0005] [Related Art Document] (Patent Document 1) Japanese Patent No. JP2571583 SUMMARY

[0006] PROBLEMS The present disclosure provides a method of forming a gallium-containing film that can suppress occurrence of defects while forming the gallium-containing film.

[0007] The present disclosure also provides a method of forming a gallium-containing film that can grow the gallium-containing film in one direction.

[0008] TECHNICAL SOLUTION According to an exemplary embodiment, a method of forming a gallium-containing film on a substrate on which at least one of a metal film, a silicon (Si) film, a silicon oxide (SiO) film, and a silicon nitride (SiN) film is formed includes preparing the substrate, spraying a gallium (Ga)-containing source gas onto the substrate, and spraying a nitrogen (N)-containing reaction gas onto the substrate, thereby forming a first gallium nitride (GaN) film on an upper portion of at least one of the silicon film and the silicon nitride film of the substrate.

[0009] The step of spraying the reaction gas can include forming a plasma by using the reaction gas.

[0010] The method of forming a gallium-containing film according to the exemplary embodiment can further include, after forming the first gallium nitride film, spraying the gallium (Ga)-containing source gas and the nitrogen (N)-containing reaction gas, thereby forming a second gallium nitride film on the first gallium nitride film.

[0011] The method of forming a gallium-containing film according to an example embodiment can further include forming a third gallium nitride film on the second gallium nitride film, wherein the forming the third gallium nitride film can include spraying a gallium (Ga)-containing source gas onto the substrate, and spraying a nitrogen (N)-containing reactive gas onto the substrate, thereby forming the third gallium nitride film on the second gallium nitride film.

[0012] The method of forming a gallium-containing film according to an example embodiment can further include a step of forming a hydrogen plasma, wherein the step of forming the hydrogen plasma can be performed between the step of spraying the gallium (Ga)-containing source gas and the step of spraying the nitrogen (N)-containing reactive gas.

[0013] The method of forming a gallium-containing film according to an example embodiment can further include a step of forming a hydrogen plasma, wherein the step of forming the hydrogen plasma can be performed after the step of spraying the nitrogen (N)-containing reactive gas is completed.

[0014] The step of forming the second gallium nitride film can include forming a plasma by using a reactive gas.

[0015] The method of forming a gallium-containing film according to an example embodiment can further include a step of forming a hydrogen plasma, wherein the step of forming the hydrogen plasma can be performed after the step of spraying the gallium (Ga)-containing source gas and the nitrogen (N)-containing reactive gas to form the second gallium nitride film is completed.

[0016] According to another example embodiment, a method of forming a gallium-containing film on a substrate on which at least one of a metal film, a silicon (Si) film, a silicon oxide (SiO) film, and a silicon nitride (SiN) film is formed includes preparing the substrate, spraying a gallium (Ga)-containing source gas onto the substrate, and spraying an oxygen (O)-containing reactive gas onto the substrate, thereby forming a first gallium oxide (GaO) film on an upper portion of at least one of the silicon film and the silicon oxide film on the substrate.

[0017] The step of spraying the reactive gas can include forming a plasma by using a reactive gas.

[0018] The method of forming a gallium-containing film according to another example embodiment can further include, after forming the first gallium oxide film, spraying a gallium (Ga)-containing source gas and an oxygen (O)-containing reactive gas, thereby forming a second gallium oxide film on the first gallium oxide film.

[0019] The method of forming a gallium-containing film according to another example embodiment can further include forming a third gallium oxide film on the second gallium oxide film, wherein the forming the third gallium oxide film can include spraying a gallium (Ga)-containing source gas onto the substrate, and spraying an oxygen (O)-containing reactive gas onto the substrate, thereby forming the third gallium oxide film on the second gallium oxide film.

[0020] The method of forming a gallium-containing film according to another example embodiment can further include a step of forming a hydrogen plasma, wherein the step of forming the hydrogen plasma can be performed between the step of spraying the gallium (Ga)-containing source gas and the step of spraying the oxygen (O)-containing reactive gas.

[0021] The method of forming a gallium-containing film according to another example embodiment can further include a step of forming a hydrogen plasma, wherein the step of forming the hydrogen plasma can be performed after the step of spraying the oxygen (O)-containing reactive gas is completed.

[0022] The step of forming the second gallium oxide film can include forming a plasma by using a reactive gas.

[0023] The method of forming a gallium-containing film according to another example embodiment can further include a step of forming a hydrogen plasma, wherein the step of forming the hydrogen plasma can be performed after the steps of spraying the gallium (Ga)-containing source gas and the oxygen (O)-containing reactive gas to form the second gallium oxide film are completed.

[0024] Advantages According to example embodiments of the disclosure, a gallium nitride film or a gallium oxide film can be easily formed. That is, on a silicon (Si) substrate, a gallium nitride film or a gallium oxide film can grow in one direction. Accordingly, the occurrence of defects can be suppressed while forming a gallium nitride film or a gallium oxide film. Thus, there is an effect of improving the characteristics of a semiconductor device to which a gallium nitride film or a gallium oxide film is applied. BRIEF DESCRIPTION OF DRAWINGS

[0025] Figure 1 FIG. 1 is a view showing a state in which a gallium (Ga)-containing film is formed on a substrate according to an example embodiment.

[0026] Figure 2 FIG. 2 is a view showing a state in which a gallium (Ga)-containing film is formed on a substrate according to a modification example of the example embodiment.

[0027] Figure 3 (a) to (c) in FIG. 3 are views showing a method of forming a gallium (Ga)-containing film on a substrate according to another example embodiment.

[0028] Figure 4 FIG. 4 is a view showing a state in which a gallium (Ga)-containing film is formed on a substrate according to a modification example of the another example embodiment.

[0029] Figure 5 FIG. 5 is a view schematically showing a deposition apparatus of forming a gallium-containing film according to an example embodiment. DETAILED DESCRIPTION

[0030] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The present disclosure may, however, be embodied in different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and fully convey the scope of the present disclosure to those skilled in the art. The accompanying drawings are used to describe the embodiments of the present disclosure and the same reference numerals in the drawings refer to the same elements.

[0031] The present disclosure relates to a method of forming a gallium (Ga) containing film. More particularly, the present disclosure relates to a method of forming a gallium nitride (GaN) film or a gallium oxide (GaO) film on a substrate.

[0032] Figure 1 FIG. 1 is a view showing a state in which a gallium (Ga) containing film according to an exemplary embodiment is formed on a substrate.

[0033] The substrate 10 can be a substrate on which at least one of a metal film, a silicon (Si) film, a silicon oxide (SiO) film, and a silicon nitride (SiN) film is formed.

[0034] The substrate on which at least one of a metal film, a silicon (Si) film, a silicon oxide (SiO) film, and a silicon nitride (SiN) film is formed can include a base and at least one of a metal film, a silicon (Si) film, a silicon oxide (SiO) film, and a silicon nitride (SiN) film formed on the base.

[0035] For example, the base can be any one of a wafer, a glass, a metal plate, and a polymer film. The wafer can be a silicon (Si) wafer, and various other wafers can be used.

[0036] The metal film can be a film including a metal other than silicon (Si). For example, the metal film can be a film including at least one of tungsten, iridium, osmium, rhodium, platinum, silver, rhenium, and palladium.

[0037] In addition, the substrate on which the silicon (Si) film is formed can be a silicon (Si) wafer. That is, the silicon film itself can refer to a silicon wafer.

[0038] As described above, at least one of a metal film, a silicon (Si) film, a silicon oxide (SiO) film, and a silicon nitride (SiN) film can be formed on the base. At this time, at least two of a metal film, a silicon (Si) film, a silicon oxide (SiO) film, and a silicon nitride (SiN) film can be formed on the base. That is, two or more films, three or more films, or four films of a metal film, a silicon (Si) film, a silicon oxide (SiO) film, and a silicon nitride (SiN) film can be formed on the base.

[0039] Further, when at least two of the metal film, the silicon (Si) film, the silicon oxide (SiO) film, and the silicon nitride (SiN) film are formed on the substrate, two or more different films can be formed in different regions. For example, when the metal film, the silicon (Si) film, the silicon oxide (SiO) film, and the silicon nitride (SiN) film are formed on one surface of a silicon wafer (substrate), the metal film, the silicon (Si) film, the silicon oxide (SiO) film, and the silicon nitride (SiN) film can be formed in different regions on the one surface.

[0040] In the embodiment, a gallium (Ga)-containing film is formed on the substrate 10 as described above. The substrate 10 according to the exemplary embodiment can be a substrate on which a silicon film is formed. That is, for example, the substrate can be a silicon wafer. Further, the gallium-containing film according to the exemplary embodiment can be a gallium nitride (GaN) film 11.

[0041] Hereinafter, a method of forming the gallium nitride film 11 on the substrate 10 will be described. At this time, a method of forming the gallium nitride film 11 by an atomic layer deposition (ALD) method will be described.

[0042] The step of forming the gallium nitride film 11 can include a step of spraying a source gas containing gallium (Ga) into a chamber in which the substrate 10 is loaded (gallium (Ga)-containing source gas spraying step) and a step of spraying a reaction gas containing nitrogen (N) (nitrogen (N)-containing reaction gas spraying step). Further, the step of forming the gallium nitride film 11 can set the "gallium (Ga)-containing source gas spraying step - nitrogen (N)-containing reaction gas spraying step" as one cycle (hereinafter, referred to as "gallium nitride film formation cycle CY GaN "). That is, the step of forming the gallium nitride film 11 includes the gallium nitride film formation cycle CY GaN , the gallium nitride film formation cycle CY GaN may include the gallium (Ga)-containing source gas spraying step and the nitrogen (N)-containing reaction gas spraying step. Here, plasma (first plasma) (PEALD) can be generated in the step of spraying the nitrogen (N)-containing reaction gas. That is, nitrogen plasma is generated by using the nitrogen (N)-containing reaction gas.

[0043] Further, the step of forming the gallium nitride film 11 can further include at least one of a step of spraying a purge gas between the gallium (Ga)-containing source gas spraying step and the nitrogen (N)-containing reaction gas spraying step (first purge step) and a step of spraying a purge gas after the nitrogen (N)-containing reaction gas spraying step (second purge step). In this case, the "gallium (Ga)-containing source gas spraying step - first purge step - nitrogen (N)-containing reaction gas spraying step - second purge step" can be set as one cycle (gallium nitride film formation cycle CY GaN). That is, the step of forming the gallium nitride film 11 includes a gallium nitride film forming cycle CY GaN , the gallium nitride film forming cycle CY GaN may include a gallium (Ga) source gas spouting step, a first purge step, a nitrogen (N) reaction gas spouting step, and a second purge step. At this time, in the gallium nitride film forming cycle CY GaN , at least one of the first purge step and the second purge step can be omitted.

[0044] Hereinafter, the gallium nitride film forming cycle CY GaN will be described in detail.

[0045] In the step of spouting the gallium (Ga) source gas, a source gas containing or including gallium (Ga) is spouted toward the substrate 10. That is, the gallium-containing source gas can be spouted into the chamber in which the substrate 10 is loaded. Here, for example, the gallium (Ga) source gas can be trimethyl gallium (TMGa) (Ga(CH3)3). Of course, the gallium (Ga) source gas is not limited to the above-described material, and various gallium (Ga)-containing gases can be used.

[0046] When the gallium (Ga) source gas is spouted toward the substrate 10, the source gas is deposited or adsorbed on one surface of the substrate 10, thereby depositing a gallium (Ga)-containing layer. That is, a gallium metal film is deposited on the silicon (Si) film.

[0047] When the step of spouting the gallium (Ga) gas is completed, a purge gas is spouted into the chamber in which the substrate 10 is loaded, thereby performing the first purge. At this time, for example, argon (Ar) gas can be used as the purge gas.

[0048] When the first purge is completed, a nitrogen (N) reaction gas is spouted into the chamber. Here, for example, the nitrogen (N) reaction gas can be a gas containing NH3. Of course, the nitrogen (N) reaction gas is not limited to the above-described material, and various nitrogen (N)-containing gases can be used. When the nitrogen (N) reaction gas is spouted into the chamber, the gallium metal film formed on the substrate 10 reacts with nitrogen (N). Thus, the gallium nitride film 11 is formed.

[0049] Further, in the embodiment, when the nitrogen (N) reaction gas is spouted into the chamber, plasma (first plasma) is generated in the chamber. That is, nitrogen plasma is generated by discharging the nitrogen (N) reaction gas. Further, when the nitrogen (N) reaction gas is spouted, a discharge gas can be spouted together, and argon (Ar) gas can be used as the discharge gas.

[0050] A method of generating plasma (first plasma) will be briefly described below. Radio frequency (RF) power is applied to at least one of a susceptor on which the substrate 10 is placed and a shower for spraying gas into the chamber. In addition, a nitrogen (N) containing reaction gas and argon (Ar) gas are sprayed into the chamber through the shower. When the RF power is applied as described above and the nitrogen (N) containing reaction gas and argon (Ar) gas are sprayed, plasma containing nitrogen (N), i.e., nitrogen plasma, can be generated inside the chamber.

[0051] Since the nitrogen plasma is generated during spraying of the nitrogen (N) containing reaction gas as described above, the gallium nitride film 11 can be easily grown. That is, the gallium nitride film 11 can be grown in one direction. Therefore, generation of defects can be suppressed while the gallium nitride film 11 is formed.

[0052] After that, a purge gas is sprayed into the chamber in which the substrate 10 is loaded, so that secondary purge is performed. At this time, the purge gas can be the same as that used in the primary purge, and for example, argon (Ar) gas can be used.

[0053] The process including the gallium (Ga) containing source gas spraying step, the primary purge step, the nitrogen (N) containing reaction gas spraying step, and the secondary purge step as described above can be set as one gallium nitride film formation cycle CY GaN . That is, the cycle CY GaN in which the gallium nitride film 11 is formed can include "gallium (Ga) containing source gas spraying step-primary purge step-nitrogen (N) containing reaction gas spraying step-secondary purge step", in which plasma (first plasma) is generated in the nitrogen (N) containing reaction gas spraying step. In addition, the gallium nitride film formation cycle CY GaN may be performed once or continuously performed a plurality of times, i.e., one or more times.

[0054] When the gallium nitride film 11 is formed by an atomic layer deposition method, hydrogen (H2) plasma (second plasma) can be generated. That is, the gallium nitride film formation cycle CY GaN may include that hydrogen plasma is generated after the nitrogen (N) containing reaction gas spraying step, so that the gallium nitride film 11 is exposed to the hydrogen plasma. Therefore, the gallium nitride film formation cycle CY GaN may include "gallium (Ga) containing source gas spraying step-primary purge step-nitrogen (N) containing reaction gas spraying step-hydrogen plasma exposure step-secondary purge step".

[0055] A method of generating a hydrogen plasma (second plasma) will be briefly described below. A radio frequency (RF) power is applied to at least one of a susceptor on which the substrate 10 is placed inside the chamber and a shower for spraying a gas into the chamber. Further, a hydrogen (H2) containing gas is used as a gas for generating a plasma. More specifically, the gas for generating a plasma can be hydrogen gas (H2). Further, argon (Ar) gas can be further sprayed together with the hydrogen gas. When the RF power is applied as described above and the hydrogen (H2) containing gas and the argon (Ar) containing gas are sprayed, a plasma containing hydrogen (H2), that is, a hydrogen plasma (second plasma) can be generated inside the chamber. Thus, the gallium nitride film 11 is exposed to the hydrogen plasma.

[0056] The hydrogen plasma (second plasma) exposure step is a step of generating a hydrogen plasma as described above to expose the gallium nitride film 11 to the hydrogen plasma. Thus, the hydrogen plasma exposure step can be referred to as a hydrogen plasma generation step.

[0057] The gallium (Ga) containing source gas or the nitrogen (N) containing reaction gas can contain impurities. Further, the impurities remaining inside the chamber can be introduced into the gallium nitride film 11 formed on the substrate 10. Further, the impurities contained in the gallium nitride film 11 can deteriorate the characteristics of the gallium nitride film 11 or a device including the gallium nitride film, for example, the characteristics of a power device. Thus, it is preferable to remove the impurities contained in the gallium nitride film 11.

[0058] Thus, in the embodiment, after the nitrogen (N) containing source gas is sprayed to deposit the gallium nitride film 11, the gallium nitride film 11 is exposed to the hydrogen plasma to remove the impurities. If the gallium nitride film 11 is exposed to the hydrogen plasma, the impurities contained in the gallium nitride film 11 react with hydrogen. Thus, the impurities contained in the gallium nitride film 11 react with hydrogen and become a gas to be detached from the gallium nitride film 11. Thus, the content of the impurities contained in the gallium nitride film 11 is reduced.

[0059] In the above, spraying the nitrogen (N) containing reaction gas and then exposing the gallium nitride film 11 to the hydrogen plasma has been described. However, the embodiment is not limited to this, and the hydrogen plasma can be generated between the gallium (Ga) containing source gas spraying step and the nitrogen (N) containing reaction gas spraying step to expose the gallium metal film to the hydrogen plasma to remove the impurities. In this case, the gallium nitride film formation cycle CY GaN The "gallium (Ga) containing source gas spraying step - hydrogen plasma exposure step - first purge step - nitrogen (N) containing reaction gas spraying step - second purge step" can be included.

[0060] Furthermore, the hydrogen plasma exposure step can be performed twice. That is, hydrogen plasma can be generated between the gallium (Ga) source gas spraying step and the nitrogen (N) reactant gas spraying step (first hydrogen plasma exposure step), and hydrogen plasma can be generated after the nitrogen (N) reactant gas spraying step (secondary plasma exposure step). In this case, a gallium nitride film forms a cyclic CY. GaN It may include "Ga-containing source gas spraying step - first hydrogen plasma exposure step - first purging step - nitrogen-containing reactive gas spraying step - second hydrogen plasma exposure step - second purging step".

[0061] Figure 2 This is a view showing a state in which a gallium (Ga) film is formed on a substrate according to a modified example of an exemplary embodiment.

[0062] In the exemplary embodiments described above, the formation of gallium nitride film 11 by atomic layer deposition (ALD) method has been described. However, the embodiments are not limited thereto, and gallium nitride film 11 can be formed by atomic layer deposition (ALD) method and chemical vapor deposition (CVD) method.

[0063] In the following text, refer to Figure 2 This document describes a method for forming a gallium nitride film 11 on a substrate 10 according to a modified example of an exemplary embodiment. For ease of explanation, the gallium nitride film formed by atomic layer deposition (ALD) is referred to as a first gallium nitride film 11a, and the gallium nitride film formed by chemical vapor deposition (CVD) is referred to as a second gallium nitride film 11b. Furthermore, the formation of the first gallium nitride film 11a by atomic layer deposition (ALD) is simply referred to as the "first deposition method," and the formation of the second gallium nitride film 11b by chemical vapor deposition (CVD) is simply referred to as the "second deposition method."

[0064] Reference Figure 2 The method for forming a gallium nitride film 21 includes forming a first gallium nitride film 11a using atomic layer deposition (ALD) and forming a second gallium nitride film 11b using chemical vapor deposition (CVD). That is, the steps for forming the gallium nitride film 21 include forming the first gallium nitride film 11a by a first deposition method and forming the second gallium nitride film 11b by a second deposition method. In this case, the first deposition method can be performed first, followed by the second deposition method (ALD-CVD). Therefore, a gallium nitride film 11, on which the first gallium nitride film 11a and the second gallium nitride film 11b are stacked, can be formed on the substrate 10.

[0065] Hereinafter, a method of forming the second gallium nitride film 11b on the first gallium nitride film 11a by a chemical vapor deposition (CVD) method will be briefly described.

[0066] Forming the second gallium nitride film 11b by the chemical vapor deposition (CVD) method can include spraying a gallium (Ga) containing source gas and a nitrogen (N) containing reactive gas into a chamber in which the first gallium nitride film 11a is formed. At this time, the gallium (Ga) containing source gas and the nitrogen (N) containing reactive gas are sprayed together or simultaneously. When the gallium (Ga) containing source gas and the nitrogen (N) containing reactive gas are sprayed into the chamber, gallium (Ga) and nitrogen (N) react with each other. Thus, the second gallium nitride film 11b is formed on the first gallium nitride film 11a.

[0067] When the second gallium nitride film 11b is formed by the chemical vapor deposition method as described above, a plasma (first plasma) can be generated. That is, the plasma (PECVD) can be generated in the step of spraying the gallium (Ga) containing source gas and the nitrogen (N) containing reactive gas together. Further, when the gallium (Ga) containing source gas and the nitrogen (N) containing reactive gas are sprayed, an exhaust gas can be sprayed therewith, and argon (Ar) gas can be used as the gas for exhaust. At this time, the generated plasma can be a plasma containing gallium (Ga) and nitrogen (N), and can be a nitrogen plasma containing a large amount of nitrogen (N) compared to gallium (Ga).

[0068] Hereinafter, a method of generating the plasma (first plasma) will be briefly described. A radio frequency (RF) power is applied to at least one of a susceptor in which the substrate 10 is seated and a showerhead for spraying a gas into the chamber. Further, a gallium (Ga) containing source gas, a nitrogen (N) containing reactive gas, and argon (Ar) gas are sprayed into the chamber through the showerhead. When the RF power is applied and the gases are sprayed as described above, a plasma, i.e., a nitrogen plasma, can be generated inside the chamber.

[0069] Since the plasma (first plasma) is generated during spraying of the gallium (Ga) containing source gas and the nitrogen (N) containing reactive gas as described above, the second gallium nitride film 11b can be easily grown. That is, the second gallium nitride film 11b can be grown in one direction. Thus, occurrence of defects can be suppressed while the second gallium nitride film 11b is formed.

[0070] When the second gallium nitride film 11b is formed by the chemical vapor deposition method, hydrogen (H2) plasma (second plasma) can be generated. That is, after the second gallium nitride film 11b is formed by spattering a gallium (Ga)-containing source gas and a nitrogen (N)-containing gas, hydrogen plasma can be generated, and thus the second gallium nitride film 11b can be exposed to the hydrogen plasma. Accordingly, impurities contained in the second gallium nitride film 11b can be removed. Of course, the hydrogen plasma can be generated by spattering the gallium (Ga)-containing source gas and the nitrogen (N)-containing gas.

[0071] In another example, at least one of the first deposition method and the second deposition method can be performed multiple times with a time interval therebetween to form the gallium nitride film. For example, the method of forming the gallium nitride film 11 can include forming the first gallium nitride film 11a by the first deposition method, forming the second gallium nitride film 11b by the second deposition method, and forming the first gallium nitride film 11a by the first deposition method (ALD-CVD-ALD).

[0072] Of course, not limited thereto, forming the first gallium nitride film 11a by the first deposition method and forming the second gallium nitride film 11b by the second deposition method can be alternately performed multiple times. That is, the method of forming the gallium nitride film 11 can include forming the first gallium nitride film 11a by the first deposition method, forming the second gallium nitride film 11b by the second deposition method, forming the first gallium nitride film 11a by the first deposition method, and forming the second gallium nitride film 11b by the second deposition method (ALD-CVD-ALD-CVD).

[0073] In the above, forming the gallium nitride film 11 on the substrate 10 on which the silicon film is formed has been described. That is, forming the gallium nitride film 11 on a silicon wafer has been described. However, the substrate 10 can not be a silicon wafer, and can be a substrate having at least one of a silicon film, a silicon nitride film, a silicon oxide film, and a metal film formed on one surface thereof.

[0074] For example, the substrate 10 can include a base and at least one of a silicon film, a silicon nitride film, a silicon oxide film, and a metal film formed on the base. At this time, the base can not be a silicon wafer, but can be any one of a glass, a metal plate, and a polymer film. That is, the substrate 10 can have at least two different films of the silicon film, the silicon nitride film, the silicon oxide film, and the metal film formed on one surface of the base. At this time, the two or more different films can be formed in different regions on one surface of the base. As a more specific example, the substrate 10 can have a silicon film and a silicon nitride film formed on the base. In this case, the gallium nitride film 11 can be formed on an upper portion of at least one of the silicon film and the silicon nitride film. As another example, the substrate 10 can have at least one of a silicon film and a silicon nitride film and at least one of a silicon oxide film and a metal film on the base. In this case, the gallium nitride film can be formed on at least one of the silicon film and the silicon nitride film.

[0075] In the above-described example embodiment, the formation of the gallium nitride film 11 on the substrate (i.e., the silicon wafer) has been described. However, the example embodiment is not limited thereto, and a gallium oxide (GaO) film can be formed on the substrate 10. At this time, the method of forming the gallium oxide (GaO) film is the same as that of the above-described example embodiment and the modified example of the example embodiment. However, the only difference is that an oxygen-containing reaction gas can be used as the reaction gas.

[0076] At this time, the substrate 10 can have a silicon film and a silicon oxide film formed on the base. In this case, the gallium oxide film can be formed on an upper portion of at least one of the silicon film and the silicon oxide film. In another example, the substrate 10 can have at least one of a silicon film and a silicon oxide film and at least one of a silicon nitride film and a metal film on the base. In this case, the gallium oxide film can be formed on an upper portion of at least one of the silicon film and the silicon oxide film.

[0077] The gallium nitride film or the gallium oxide film formed by the method according to the example embodiment and the modified example of the example embodiment can be a component of a power semiconductor device or a field effect transistor. More specifically, the gallium nitride film or the gallium oxide film formed by the method according to the modified example of the example embodiment can be an active layer or a channel layer as a component of a power semiconductor device.

[0078] Further, the gallium oxide film formed by the method according to the example embodiment can be applied in the manufacture of a device for preventing overcurrent in a power plant requiring an ultra-high voltage or a large amount of power. That is, in a power plant requiring an ultra-high voltage or a large amount of power, part of the components of the device for preventing overcurrent can include the gallium oxide film formed by the method according to the example embodiment.

[0079] As described above, a gallium nitride film or a gallium oxide film can be easily formed on a silicon (Si) substrate 10 by a method according to an exemplary embodiment or a modification example thereof. Thus, there is an effect of improving characteristics of a device (for example, a power semiconductor device) to which a gallium nitride film or a gallium oxide film is applied.

[0080] Figure 3 (a) to (c) in FIG. 1 are views illustrating a method of forming a gallium (Ga)-containing film on a substrate according to another exemplary embodiment.

[0081] In the above exemplary embodiment and the modification example of the exemplary embodiment, it has been described that a gallium nitride film is formed on at least one of a substrate on which a silicon film is formed and a substrate on which a silicon nitride film is formed, or a gallium oxide film is formed on at least one of a substrate on which a silicon film is formed and a substrate on which a silicon oxide film is formed. However, as Figure 3 As illustrated in (a) in FIG. 1, another film not containing silicon (Si) can be formed in at least a portion of the substrate 10, and there can be a case where a gallium nitride film or a gallium oxide film is to be formed on an upper portion of the another film not containing silicon (Si).

[0082] For example, the substrate can be a silicon wafer, and the another film not containing silicon (Si) can be formed in a portion of one surface of the substrate. In this case, a portion of one surface of the substrate 10 can be exposed, and the portion of one surface of the substrate 10 can not be exposed. Of course, one surface of the substrate 10 can not be exposed at all.

[0083] Further, in manufacturing a power semiconductor device, there can be a case where a gallium nitride film or a gallium oxide film is to be formed on a film not containing silicon. In this case, it is preferable to first form a silicon nitride (SiN) film or a silicon oxide (SiO) film on the film not containing silicon, and then form a gallium nitride film or a gallium oxide film on the silicon nitride film or the silicon oxide film.

[0084] Hereinafter, for convenience of explanation, a film formed on the substrate 10 and not containing silicon (Si) is referred to as "lower film 1".

[0085] In the embodiment, in order to form a gallium-containing film on the lower film 1 not containing silicon (Si), a silicon (Si)-containing film is first formed on the lower film 1. Then, a gallium (Ga)-containing film is formed on the silicon (Si)-containing film. Here, the lower film 1 can be a metal film made of a metal other than silicon (Si). For example, the lower film 1 can be a metal film containing at least one of tungsten, iridium, osmium, rhodium, platinum, silver, rhenium, and palladium.

[0086] Hereinafter, with reference to Figure 3(a) to (c) in FIG. 10, a method of forming a gallium (Ga) containing film on a substrate 10 according to another exemplary embodiment will be described. At this time, a case where the gallium containing film to be formed is a gallium nitride film 11 will be described as an example.

[0087] As Figure 3 (a) in FIG. 10, a lower film 1 not containing silicon (Si) can be formed on one surface of the substrate 10. At this time, as Figure 3 (a) in FIG. 10, the lower film 1 can be formed in a partial region of the substrate 10, and the lower film 1 can not be formed in other regions of the substrate 10. Thus, in one surface of the substrate 10, a partial region can be exposed, but other regions can not be exposed due to being shielded by the lower film 1.

[0088] First, a silicon (Si) containing film is formed on the lower film 1. Since the gallium (Ga) containing film to be formed later is a gallium nitride film, as Figure 3 (b) in FIG. 10, a silicon nitride film 21 is formed on the lower film 1. The method of forming the silicon nitride film 21 can be performed by either one of an atomic layer deposition (ALD) method and a chemical vapor deposition (CVD) method. Further, the above-described method is not limited to the above-described deposition methods, and the silicon nitride film 21 can be formed on the substrate 10 by various methods.

[0089] Further, as Figure 3 (c) in FIG. 10, a gallium nitride film 11 is formed on the silicon nitride film 21. At this time, the gallium nitride film 11 can be formed only on an upper portion of the silicon nitride film 21, or the gallium nitride film 11 can also be formed on the exposed one surface of the substrate 10. At this time, the gallium nitride film 11 can be formed on the silicon nitride film 21 by the same method as described in the exemplary embodiment. That is, the gallium nitride film 11 can be formed by either one of the atomic layer deposition (ALD) method and the chemical vapor deposition (CVD) method described in the exemplary embodiment.

[0090] Figure 4 A view showing a state where a gallium (Ga) containing film according to a modification example of another exemplary embodiment is formed on a substrate.

[0091] As described in the modification example of the exemplary embodiment, the method of forming the gallium nitride film 11 according to the modification example of another exemplary embodiment can include forming a first gallium nitride film 11a by an atomic layer deposition (ALD) method (first deposition method) and forming a second gallium nitride film 11b by a chemical vapor deposition (CVD) method (second deposition method). Thus, as Figure 4 indicated, the gallium nitride film 11 can be formed by stacking the first gallium nitride film 11a and the second gallium nitride film 11b on the silicon nitride film.

[0092] Of course, not limited thereto, the method of forming the gallium nitride film 11 can include forming the first gallium nitride film 11a by the first deposition method, forming the second gallium nitride film 11b by the second deposition method, and forming the first gallium nitride film 11a by the first deposition method (ALD-CVD-ALD).

[0093] Further, not limited thereto, forming the first gallium nitride film 11a by the first deposition method and forming the second gallium nitride film 11b by the second deposition method can be performed alternately several times. That is, the method of forming the gallium nitride film 11 can include forming the first gallium nitride film 11a by the first deposition method, forming the second gallium nitride film 11b by the second deposition method, forming the first gallium nitride film 11a by the first deposition method, and forming the second gallium nitride film 11b by the second deposition method (ALD-CVD-ALD-CVD).

[0094] In the above-described another exemplary embodiment and the modified example of the another exemplary embodiment, the case where the gallium nitride film 11 is formed on the lower film 1 has been described. However, not limited thereto, a gallium oxide (GaO) film can be formed on the lower film 1. In this case, a silicon oxide (SiO) film is formed on the lower film 1, and the gallium oxide film is formed on the silicon oxide film. The method of forming the gallium oxide film on the silicon oxide film is the same as the method in the above-described another exemplary embodiment and the modified example of the another exemplary embodiment. However, the difference is only that the oxygen-containing reaction gas can be used as the reaction gas.

[0095] The gallium nitride film or the gallium oxide film formed according to the method of the another exemplary embodiment and the modified example of the another exemplary embodiment can be a component of a power semiconductor device or a field effect transistor. More specifically, the gallium nitride film or the gallium oxide film formed according to the method of the another exemplary embodiment and the modified example of the another exemplary embodiment can be an active layer or a channel layer as a component of a power semiconductor device.

[0096] Further, the gallium oxide film can be applied in the manufacture of a device for preventing overcurrent in a power plant requiring super-high voltage or a large amount of power. That is, in a power plant requiring super-high voltage or a large amount of power, part of the components of the device for preventing overcurrent can include the gallium oxide film formed according to the method of the embodiment.

[0097] As described above, using the method according to the exemplary embodiments, it is possible to easily form a gallium nitride film or a gallium oxide film on the under film 1 formed on the substrate 10. That is, even if the under film 1 not containing silicon (Si) is formed on one surface of the substrate 10 in a region where the gallium nitride film or the gallium oxide film will be formed, it is possible to easily form the gallium nitride film or the gallium oxide film on the under film 1. More specifically, in the embodiments, a silicon nitride film or a silicon oxide film is first formed on the under film 1 formed on the substrate 10, and a gallium nitride film or a gallium oxide film is grown on the silicon nitride film or the silicon oxide film. Further, plasma is generated when the silicon nitride film or the silicon oxide film is formed. Thus, it is possible to form a gallium nitride film or a gallium oxide film grown in one direction. Accordingly, it is possible to suppress or prevent defects from being generated in the gallium nitride film or the gallium oxide film. Thus, there is an effect that the characteristics of a device (for example, a power semiconductor device) to which the gallium nitride film or the gallium oxide film is applied are improved.

[0098] Figure 5 A view of a deposition apparatus for forming a gallium-containing film according to exemplary embodiments is schematically shown.

[0099] Hereinafter, a deposition apparatus shown in FIG. Figure 5 may be described. The deposition apparatus can be an apparatus for depositing a gallium nitride film or a gallium oxide film by an atomic layer deposition (ALD) method or a chemical vapor deposition method.

[0100] Referring to Figure 5 , the deposition apparatus can include a chamber 100, a support 200 installed inside the chamber 100 to support a substrate 10, a first gas spattering part 300a and a second gas spattering part 300b each facing the support 200 installed inside the chamber 100, a gas supply unit 400 for supplying a process gas to the first gas spattering part 300a and the second gas spattering part 300b, an antenna 610 having a coil for inducing an electric field inside the chamber 100 to generate plasma, and a power supply unit 620 connected to the antenna 610.

[0101] Further, the deposition apparatus can include a heating unit 500 installed to be opposite to the support 200, a driving unit 700 for ascending / descending or rotating the support 200, and a discharge unit 800 for discharging gas and impurities inside the chamber 100.

[0102] The chamber 100 can have a cylindrical shape having an inner space in which a thin film can be formed on the substrate 10 loaded inside, for example, can have a shape as shown in Figure 5The chamber 100 is dome-shaped. More specifically, the chamber 100 may include a chamber body 110, an upper body 120 mounted on the upper part of the chamber body 110, and a lower body 130 mounted on the lower part of the chamber body 110. The chamber body 110 may be cylindrical with an opening at the top and bottom, the upper body 120 is mounted to cover the upper opening of the chamber body 110, and the lower body 130 may be mounted to cover the lower opening of the chamber body 110. Furthermore, the upper body 120 may be dome-shaped with a slope that increases in height towards the center in its width direction. Furthermore, the lower body 130 may be dome-shaped with a slope that decreases in height towards the center in its width direction. The chamber 100 (i.e., each of the chamber body 110, the upper body 120, and the lower body 130) may be made of a transparent material that allows light to pass through it, such as quartz.

[0103] The gas supply unit 400 may include a source gas supply unit 410 for supplying gallium-containing source gas, a first reaction gas supply unit 420a for supplying nitrogen-containing reaction gas, a second reaction gas supply unit 420b for supplying oxygen-containing reaction gas, a purging gas supply unit 430 for supplying purging gas, a hydrogen supply unit 440 for supplying hydrogen, and an exhaust gas supply unit 450 for supplying gas for emission.

[0104] In addition, the gas supply unit 400 may include: a first delivery pipe 460a, which is installed to connect the source gas supply unit 410, the first reaction gas supply unit 420a and the second reaction gas supply unit 420b and the first gas spraying part 300a; and a second delivery pipe 460b, which is installed to connect the purging gas supply unit 430, the hydrogen supply unit 440, the exhaust gas supply unit 450 and the second gas spraying part 300b.

[0105] In addition, the gas supply unit 400 may include a plurality of first connecting pipes 470a connecting the source gas supply unit 410, the first reaction gas supply unit 420a and the second reaction gas supply unit 420b to the first delivery pipe 460a, a plurality of valves respectively installed in the plurality of first connecting pipes 470a, a plurality of second connecting pipes 470b connecting the purging gas supply unit 430, the hydrogen supply unit 440, the exhaust gas supply unit 450 to the second delivery pipe 460b, and valves respectively installed in the plurality of second connecting pipes 470b.

[0106] In addition, it can be used Figure 5 The deposition apparatus shown forms a gallium nitride film or a gallium oxide film. In the following text, reference is made to... Figure 5 This paper describes a method for forming gallium nitride films or gallium oxide films on a substrate using atomic layer deposition.

[0107] First, a gallium-containing source gas is sprayed into the chamber 100 using the source gas supply unit 410 and the first gas spraying unit 300a. Then, a purging gas is sprayed into the chamber 100 using the purging gas supply unit 300 and the second gas spraying unit 300b to purge the chamber 100. Next, a nitrogen-containing or oxygen-containing reactive gas is sprayed into the chamber 100 using either the first reactive gas supply unit 420a or the second reactive gas supply unit 420b and the first gas spraying unit 300a. Thus, a gallium nitride film or a gallium oxide film is formed on the substrate 10. Then, a purging gas is sprayed into the chamber 100 using the purging gas supply unit 300 and the second gas spraying unit 300b to purge the chamber 100. This cycle can be performed once, or repeated once or multiple times, to form a gallium nitride film or a gallium oxide film on the substrate 10.

[0108] Furthermore, when nitrogen-containing or oxygen-containing reactive gases are sprayed, plasma can be formed inside chamber 100. That is, when reactive gases are sprayed, the exhaust gas is sprayed into chamber 100 together with the exhaust gas supply unit 450 and the second gas spraying unit 300b. Here, for example, the exhaust gas can be argon. Furthermore, if electricity is applied to antenna 610, plasma can be formed inside chamber 100. That is, by emitting reactive gases, nitrogen plasma or oxygen plasma can be formed.

[0109] Furthermore, after spraying the nitrogen-containing or oxygen-containing reactive gas, a hydrogen plasma can be formed inside the chamber 100. For this purpose, when the reactive gas spraying is complete, hydrogen and exhaust gas are sprayed into the chamber 100 using the hydrogen supply unit 440, the exhaust gas supply unit 450, and the second gas spraying unit 300b. Here, for example, the exhaust gas can be argon. Furthermore, if power is applied to the antenna 610, a hydrogen plasma can be formed inside the chamber 100, thus exposing the gallium nitride film or gallium oxide film to the hydrogen plasma. Therefore, impurities can be removed from the gallium nitride film or gallium oxide film.

[0110] The above content has described the use of Figure 5 The deposition apparatus shown forms gallium nitride or gallium oxide films using atomic layer deposition. However, it is not limited to this; other methods can be used. Figure 5 The deposition apparatus shown forms gallium nitride films or gallium oxide films using a chemical vapor deposition method.

[0111] Furthermore, the deposition equipment used to form gallium nitride films or gallium oxide films is not limited to... Figure 5 The device shown can be used with various devices.

[0112] Industrial applicability According to the example embodiment of the present disclosure, a gallium nitride film or a gallium oxide film can be easily formed. That is, on a silicon (Si) substrate, a gallium nitride film or a gallium oxide film can grow in one direction. Thus, the occurrence of defects can be suppressed while forming a gallium nitride film or a gallium oxide film. Accordingly, there is an effect of improving the characteristics of a semiconductor device to which a gallium nitride film or a gallium oxide film is applied.

Claims

1. A method of forming a gallium-containing film on a substrate on which at least one of a metal film, a silicon (Si) film, a silicon oxide (SiO) film, and a silicon nitride (SiN) film is formed, the method comprising: preparing the substrate; spraying a gallium (Ga) source gas onto the substrate; and spraying a nitrogen (N) reactive gas onto the substrate, thereby forming a first gallium nitride (GaN) film on an upper portion of at least one of the silicon film and the silicon nitride film of the substrate. The step of spraying the nitrogen (N) reactive gas includes forming a plasma by using the nitrogen (N) reactive gas.

2. The method of forming a gallium-containing film according to claim 1, wherein, 3. The method of forming a gallium-containing film according to claim 1, further comprising: after forming the first gallium nitride film, spraying a gallium (Ga) source gas and a nitrogen (N) reactive gas, thereby forming a second gallium nitride film on the first gallium nitride film.

4. The method of forming a gallium-containing film according to claim 3, further comprising: forming a third gallium nitride film on the second gallium nitride film, wherein the step of forming the third gallium nitride film includes: spraying a gallium (Ga) source gas onto the substrate; and spraying a nitrogen (N) reactive gas onto the substrate, thereby forming the third gallium nitride film on the second gallium nitride film.

5. The method of forming a gallium-containing film according to claim 1, further comprising a step of forming a hydrogen plasma, the step of forming the hydrogen plasma is performed between the step of spraying the gallium (Ga) source gas and the step of spraying the nitrogen (N) reactive gas. wherein 6. The method of forming a gallium-containing film according to claim 1, further comprising a step of forming a hydrogen plasma, the step of forming the hydrogen plasma is performed after the step of spraying the nitrogen (N) reactive gas is completed. wherein The step of forming the second gallium nitride film includes forming a plasma by using the nitrogen (N) reactive gas.

7. The method of forming a gallium-containing film according to claim 3, wherein, 8. The method of forming a gallium-containing film according to claim 3, further comprising a step of forming a hydrogen plasma, the step of forming the hydrogen plasma is performed after the step of spraying the gallium (Ga) source gas and the nitrogen (N) reactive gas, thereby forming the second gallium nitride film is completed. wherein 9. A method of forming a gallium-containing film on a substrate on which at least one of a metal film, a silicon (Si) film, a silicon oxide (SiO) film, and a silicon nitride (SiN) film is formed, the method comprising: preparing the substrate; spraying a gallium (Ga) source gas onto the substrate; and spraying an oxygen (O) reactive gas onto the substrate, thereby forming a first gallium oxide (GaO) film on an upper portion of at least one of the silicon film and the silicon oxide film on the substrate. The step of spraying the oxygen (O) reactive gas includes forming a plasma by using the oxygen (O) reactive gas.

11. The method of forming a gallium-containing film according to claim 9, further comprising:

10. The method of forming a gallium-containing film according to claim 9, wherein, ​ ​ After the step of forming the first gallium oxide film, a gallium (Ga) source gas containing gas and an oxygen (O) reactive gas containing gas are sprayed to form a second gallium oxide film on the first gallium oxide film.

12. The method of forming a gallium containing film according to claim 11, further comprising: forming a third gallium oxide film on the second gallium oxide film, wherein the step of forming the third gallium oxide film comprises: spraying a gallium (Ga) source gas containing gas onto the substrate; and spraying an oxygen (O) reactive gas containing gas onto the substrate to form the third gallium oxide film on the second gallium oxide film.

13. The method of forming a gallium containing film according to claim 9, further comprising a step of forming a hydrogen plasma, wherein the step of forming the hydrogen plasma is performed between the step of spraying the gallium (Ga) source gas containing gas and the step of spraying the oxygen (O) reactive gas containing gas.

14. The method of forming a gallium containing film according to claim 9, further comprising a step of forming a hydrogen plasma, wherein the step of forming the hydrogen plasma is performed after the step of spraying the oxygen (O) reactive gas containing gas is completed.

15. The method of forming a gallium-containing film according to claim 11, wherein, the step of forming the second gallium oxide film comprises forming a plasma by using the oxygen (O) reactive gas containing gas.

16. The method of forming a gallium containing film according to claim 11, further comprising a step of forming a hydrogen plasma, wherein the step of forming the hydrogen plasma is performed after the step of spraying the gallium (Ga) source gas containing gas and the oxygen (O) reactive gas containing gas to form the second gallium oxide film is completed.

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