Solar cell and preparation method thereof, electric equipment and power generation equipment

Abstract

The invention discloses a solar cell and a preparation method thereof, electric equipment and power generation equipment, the solar cell comprises a light absorption layer, the light absorption layer comprises a perovskite material and an additive, the additive comprises one or more functional groups, the functional groups comprise one or more of an oxyacid group and derivatives thereof, a thiocyanic acid group and derivatives thereof, an amide group and derivatives thereof, a hydrazide group and derivatives thereof, and a guanidyl and derivatives thereof; and the anions of the perovskite material comprise one or more of fluorine anions, chlorine anions, bromine anions or iodine anions. The additive is introduced into the light absorption layer, and the acting force between lone pair electrons of the additive and the perovskite material is utilized, so that the nucleation growth rate of the perovskite material is delayed, the grain size of the formed perovskite material is increased, the crystal quality of the perovskite material of halide anions is improved, and the grain boundary and / or surface defects of the perovskite material are reduced; and the device performance of the solar cell is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of new energy, in particular to a solar cell, a preparation method thereof, an electric equipment and a power generation equipment. BACKGROUND

[0002] The part provided in this part is merely background information of the present application, which is not necessarily prior art.

[0003] The solar cell has a wide application prospect due to its advantages of high conversion efficiency and easy preparation. The light absorption layer is a key film layer structure of the solar cell, and the film layer performance has an important influence on the device performance of the solar cell. SUMMARY

[0004] In view of the technical problems in the background art, the present application provides a solar cell, a preparation method thereof, an electric equipment and a power generation equipment, aiming to improve the device performance of the solar cell.

[0005] In order to achieve the above-mentioned purpose, the first aspect of the present application provides a solar cell, comprising a first electrode layer, a light absorption layer and a second electrode layer, the light absorption layer is located between the first electrode layer and the second electrode layer, the light absorption layer comprises a perovskite material and an additive, the additive comprises one or more functional groups, the functional groups comprise one or more of an oxygen-containing acid group and its derivative, a thiocyanic acid group and its derivative, an amide group and its derivative, a hydrazide group and its derivative, a guanidine group and its derivative, and the anion of the perovskite material comprises one or more of fluorine anion, chlorine anion, bromine anion or iodine anion.

[0006] The embodiments of the present application introduce an additive in the light absorption layer, the additive has an element containing a lone pair of electrons (such as one or more of oxygen element, sulfur element, nitrogen element and phosphorus element), and the rate of nucleation and growth of the perovskite material is delayed by using the force of action between the lone pair of electrons and the perovskite material, the grain size of the formed perovskite material is increased, the crystallization quality of the perovskite material of halide anion is improved, the grain boundaries and / or surface defects of the perovskite material are reduced, and the device performance of the solar cell is improved.

[0007] In some embodiments, the oxygen-containing acid group comprises one or more of a carboxylic acid group, a sulfonic acid group and a phosphonic acid group.

[0008] The embodiments of the present application provide an additive including an oxygen-containing acid group (including one or more of a carboxylic acid group, a sulfonic acid group, and a phosphonic acid group), which has a lone pair of electrons, and the lone pair of electrons has a strong force on a perovskite material (for example, A-site cations and / or B-site cations of the perovskite material), which is beneficial to regulate the crystallization rate of the perovskite material, so that the perovskite material has a slow growth process after rapid nucleation, the grain size of the perovskite material formed is larger than that of the perovskite material without the additive, the crystallization quality of the perovskite is improved, and because the grain size of the perovskite material is large, the crystal boundary and / or surface defects are reduced, thereby improving the crystallization quality of the perovskite.

[0009] In some embodiments, the additive further includes one or more of a substituted or unsubstituted hydrocarbon group, a substituted or unsubstituted aryl group, and a substituted or unsubstituted heteroaryl group.

[0010] The embodiments of the present application introduce the above-mentioned groups to make the additive have a hydrophobic group, the hydrophobic group has small polarity and is easy to stretch on the outside of the perovskite material, so that the periphery of the perovskite material is hydrophobic, water and oxygen are not easy to enter the perovskite material, and the stability of the perovskite material is improved.

[0011] In some embodiments, the substituted group includes one or more of a halogen, a hydroxyl group, and an acyl group.

[0012] The embodiments of the present application introduce the above-mentioned substituted group to regulate the performance of the additive, which is beneficial to improve the crystallization quality of the halide perovskite material, reduce the crystal boundary and / or surface defects of the perovskite material, and improve the device performance of the solar cell.

[0013] In some embodiments, the additive includes one or more of formic acid and derivatives thereof, benzoic acid and derivatives thereof, trifluorobenzoic acid and derivatives thereof, 6-isoquinoline carboxylic acid and derivatives thereof, acetic acid and derivatives thereof, trifluoroacetic acid and derivatives thereof, acrylic acid and derivatives thereof, sulfonic acid and derivatives thereof, benzene sulfonic acid and derivatives thereof, thiocyanic acid and derivatives thereof, phosphoric acid and derivatives thereof, phenethylamine and derivatives thereof, N-(2-aminoethyl)benzamide and derivatives thereof, 4-hydroxybenzamide and derivatives thereof, 5-hydroxyisophthalamide and derivatives thereof, phthalhydrazide and derivatives thereof, 2-aminobenzamide and derivatives thereof, 4-hydroxybenzhydrazide and derivatives thereof, carbamide and derivatives thereof, and guanidine and derivatives thereof.

[0014] The embodiments of the present application delay the nucleation and growth rate of the perovskite material by using the above-mentioned additive, increase the grain size of the perovskite material formed, improve the crystallization quality of the halide perovskite material, reduce the crystal boundary and / or surface defects of the perovskite material, and improve the device performance of the solar cell.

[0015] In some embodiments, the derivative comprises a salt, and the cation of the salt comprises one or more of methylammonium cation, cesium cation, formamidinium cation, guanidinium cation, amide cation, and hydrazine cation.

[0016] Embodiments of the present application improve the crystalline quality of the perovskite material of halide anions, reduce the grain boundaries and / or surface defects of the perovskite material, and improve the device performance of the solar cell by providing the derivative as described above.

[0017] In some embodiments, the anion of the perovskite material comprises any one of fluoride anion, chloride anion, bromide anion, or iodide anion.

[0018] Embodiments of the present application solve the problem of phase separation of mixed halogens by providing the perovskite material of single halide anion as described above, compared to the perovskite material of mixed halide anions, and have a more continuous and uniform band structure, and a more stable material performance, which is conducive to improving the device performance of the solar cell.

[0019] In some embodiments, the anion of the perovskite material comprises iodide anion.

[0020] Embodiments of the present application provide the perovskite material of single iodide anion, which has good synergistic effect with the additive, and the formed perovskite material has good crystalline quality, which is conducive to improving the device performance of the solar cell.

[0021] In some embodiments, the band gap of the perovskite material is in the range of 1.20eV-2.30eV.

[0022] In embodiments of the present application, the perovskite material with the band gap in the above range can effectively absorb the solar spectrum in the visible to near-infrared region, and more solar energy can be converted into electrical energy, thereby improving the photoelectric conversion efficiency and being suitable for the application of solar cells.

[0023] In some embodiments, the thickness of the light absorption layer is in the range of 200nm-1000nm.

[0024] In embodiments of the present application, the light absorption layer with the thickness in the above range can absorb most of the visible to near-infrared photons in a very thin film layer due to the high light absorption coefficient of the perovskite material, which reduces the amount of perovskite material used and helps to reduce the cost and improve the performance of the solar cell.

[0025] In some embodiments, the chemical formula of the perovskite material is ABX3 or A2CDX6.

[0026] Wherein, A is one or more of cesium cation, formamidinium cation, methylamine cation, rubidium cation, guanidinium cation; B includes one or both of tin cation and lead cation; C includes silver cation; D includes one or more of bismuth cation, antimony cation, and indium cation; X includes any one of fluoride anion, chloride anion, bromide anion, and iodide anion.

[0027] In the embodiments of the present application, the perovskite material provided above has a relatively continuous and uniform energy band structure and relatively stable material performance, which is conducive to improving the device performance of the solar cell.

[0028] In some embodiments, the solar cell further includes a hole transport layer, the hole transport layer being located between the first electrode layer or the second electrode layer and the light absorbing layer.

[0029] In the embodiments of the present application, the hole transport layer provided above can synergize with the light absorbing layer provided in the embodiments of the present application to improve the device performance of the solar cell.

[0030] In some embodiments, the hole transport layer includes a hole transport material, the hole transport material including one or more of nickel oxide, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(3-hexylthiophene), poly 3,4-ethylenedioxythiophene: polystyrene sulfonate, and 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene.

[0031] In the embodiments of the present application, the hole transport layer including the hole transport material provided above synergizes with the light absorbing layer provided in the embodiments of the present application to improve the device performance of the solar cell.

[0032] In some embodiments, the solar cell further includes an electron transport layer, the electron transport layer being located between the second electrode layer or the first electrode layer and the light absorbing layer.

[0033] In the embodiments of the present application, the electron transport layer provided above can synergize with the light absorbing layer provided in the embodiments of the present application to improve the device performance of the solar cell.

[0034] In some embodiments, the electron transport layer includes an electron transport material, the electron transport material including one or more of tin oxide, titanium oxide, carbon 60, and fullerene derivative.

[0035] In the embodiments of the present application, the electron transport layer including the electron transport material provided above synergizes with the light absorbing layer provided in the embodiments of the present application to improve the device performance of the solar cell.

[0036] In a second aspect, the embodiments of the present application provide a method for manufacturing any of the solar cells provided in the first aspect, the method including:

[0037] A substrate structure is provided, the substrate structure at least comprising a first electrode layer;

[0038] A perovskite precursor solution is disposed on the substrate structure, the perovskite precursor solution comprising a perovskite precursor and an additive, the additive comprising one or more functional groups, the functional groups comprising one or more of an oxoacid group and derivatives thereof, a thiocyanic acid group and derivatives thereof, an amide group and derivatives thereof, a hydrazide group and derivatives thereof, a guanidine group and derivatives thereof, anions of the perovskite material comprising one or more of fluoride anions, chloride anions, bromide anions or iodide anions, after a nucleation and crystallization process, the perovskite precursor solution forms a light absorption layer;

[0039] A second electrode layer is prepared on the light absorption layer.

[0040] In the embodiments of the present application, the solar cell formed by the above preparation method introduces an additive into the light absorption layer, the additive has an element comprising a lone pair of electrons, and the rate of nucleation and growth of the perovskite material is slowed down by using the force between the lone pair of electrons and the perovskite material, the grain size of the formed perovskite material is increased, the crystallization quality of the perovskite material of halide anions is improved, the grain boundaries and / or surface defects of the perovskite material are reduced, and the device performance of the solar cell is improved.

[0041] In some embodiments, the perovskite precursor comprises divalent metal cations, and the molar amount of the additive is 0.01% to 20% of the molar amount of the divalent metal cations.

[0042] In the embodiments of the present application, the molar amount of the additive is within the above range, which is beneficial to regulating the nucleation and growth rate of the perovskite material, promoting the grain growth of the perovskite material, improving the crystallization quality of the perovskite material, reducing the grain boundaries and / or surface defects of the perovskite material, improving the carrier transport efficiency, and improving the device performance of the solar cell.

[0043] In a third aspect, the embodiments of the present application provide a power consuming device, comprising any of the solar cells provided in the first aspect or prepared by the preparation method of any of the solar cells provided in the second aspect. The power consuming device adopts the solar cell provided in the present application, and at least has the same advantages as the solar cell, so that the battery performance of the power consuming device can be improved.

[0044] In a fourth aspect, the embodiments of the present application provide a power generation device, comprising any of the solar cells provided in the first aspect or prepared by the preparation method of any of the solar cells provided in the second aspect. The power generation device adopts the photovoltaic module provided in the present application, and at least has the same advantages as the photovoltaic module, so that the power consumption performance of the power generation device can be improved. BRIEF DESCRIPTION OF DRAWINGS

[0045] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments description will be briefly introduced. Obviously, the drawings in the following description only constitute some embodiments of the present application, and other drawings can be obtained based on these drawings without creative labor.

[0046] Figure 1 is a first structural schematic diagram of a solar cell provided by an embodiment of the present application;

[0047] Figure 2 is a second structural schematic diagram of a solar cell provided by an embodiment of the present application;

[0048] Figure 3 is a third structural schematic diagram of a solar cell provided by an embodiment of the present application;

[0049] Figure 4 is a fourth structural schematic diagram of a solar cell provided by an embodiment of the present application;

[0050] Figure 5 is a fifth structural schematic diagram of a solar cell provided by an embodiment of the present application;

[0051] Figure 6 is a structural schematic diagram of an electric device provided by an embodiment of the present application;

[0052] Figure 7 is a structural schematic diagram of a power generation device provided by an embodiment of the present application;

[0053] Figure 8 is a micro-morphology image of a light absorbing layer prepared in Example 1;

[0054] Figure 9 is a micro-morphology image of a light absorbing layer prepared in Comparative Example 1.

[0055] Explanation of the drawings:

[0056] 100-solar cell, 10-light absorbing layer, 20-first electrode layer, 30-second electrode layer, 40-hole transporting layer, 50-electron transporting layer, 60-substrate, 1000-electric device, 2000-power generation device. DETAILED DESCRIPTION

[0057] The present application will be further described below in conjunction with specific embodiments. It should be understood that these specific embodiments are only used to illustrate the present application and not to limit the scope of the present application.

[0058] For the sake of brevity, only some numerical ranges are specifically disclosed herein. However, any upper limit can be combined with any lower limit to make a range not expressly disclosed; and any lower limit can be combined with any other lower limit to make a range not expressly disclosed, and any upper limit can be combined with any other upper limit to make a range not expressly disclosed. Further, each individual disclosed point or single numerical value can be combined with any other point or single numerical value, or with other lower or upper limits, to make a range not expressly disclosed.

[0059] In the description herein, the term "or" is inclusive, unless it is indicated otherwise. That is, the phrase "A or B" means "A, B, or both A and B." More specifically, any one of the following conditions fulfills the condition "A or B": A is true (or exists) and B is false (or does not exist); A is false (or does not exist) and B is true (or exists); or both A and B are true (or exist).

[0060] In the description herein, it is to be noted that, unless otherwise stated, "above", "below" are inclusive of the number itself, and "one or several" means two or more.

[0061] Unless otherwise defined, the terms used in the present application have the meanings commonly used in the art. Unless otherwise stated, the values of the parameters mentioned in the present application can be measured by various measurement methods commonly used in the art (for example, tests can be carried out according to the methods given in the examples of the present application).

[0062] Perovskite material is a commonly used light absorption layer material for solar cells, and its performance directly affects the device performance of the solar cell. Among them, the perovskite material containing halide anions has a wide band gap, which is conducive to matching the solar spectrum and improving the photoelectric conversion efficiency, and also has many advantages such as high defect state tolerance, long-range charge transport, and low-cost manufacturing process, etc. Therefore, the perovskite battery containing halide anions has attracted widespread attention and has strong application potential.

[0063] Perovskite material has many nucleation sites, and is prone to explosive nucleation and growth process, which leads to the decrease of the crystalline quality of the perovskite material and affects the device performance of the corresponding solar cell.

[0064] In order to improve the device performance of the solar cell, the embodiments of the present application introduce an additive into the light absorption layer, which has an element containing a lone pair of electrons (such as one or more of oxygen element, sulfur element, nitrogen element, phosphorus element), and uses the force between the lone pair of electrons and the perovskite material to slow down the nucleation and growth rate of the perovskite material, increase the grain size of the formed perovskite material, improve the crystalline quality of the halide anion perovskite material, reduce the grain boundary and / or surface defects of the perovskite material, and improve the device performance of the solar cell.

[0065] The technical solutions described in the embodiments of the present application are suitable for a solar cell and a preparation method thereof, an electric device, and a power generation device. The solar cell disclosed in the present application can be used in a perovskite-containing stacked solar cell, such as a perovskite-perovskite stacked solar cell, a silicon-perovskite stacked solar cell, a perovskite-heterojunction stacked solar cell, and the like, and the present application is not limited in this regard.

[0066] Please refer to Figure 1 , Figure 1 is a first structural schematic diagram of a solar cell provided by the embodiments of the present application.

[0067] In order to achieve the above-mentioned purpose, referring to Figure 1 , the first aspect of the present application provides a solar cell 100. The solar cell 100 comprises a first electrode layer 20, a light absorbing layer 10, and a second electrode layer 30, and the light absorbing layer 10 is located between the first electrode layer 20 and the second electrode layer 30. The light absorbing layer 10 comprises a perovskite material and an additive, the additive comprises one or more functional groups, the functional groups comprise one or more of an oxoacid group and a derivative thereof, a thiocyanic acid group and a derivative thereof, an amide group and a derivative thereof, a hydrazide group and a derivative thereof, and a guanidine group and a derivative thereof, and the anion of the perovskite material comprises one or more of a fluoride anion, a chloride anion, a bromide anion, or an iodide anion.

[0068] The solar cell 100 refers to a device that directly converts light energy into electrical energy through a photovoltaic effect. The light absorbing layer 10 is the core component of the solar cell 100, which is used to absorb the photon energy of sunlight, generate electron-hole pairs, and separate the electron-hole pairs into free electrons and holes under the action of the built-in electric field. The holes and electrons are collected by the first electrode layer 20 and the second electrode layer 30, respectively, and the first electrode layer 20 and the second electrode layer 30 are connected into a circuit to generate a photocurrent. The perovskite material refers to a material with the same crystal structure as CaTiO3, which presents a cubic crystal phase in a stable state, and is used as the main forming material of the light absorbing layer 10.

[0069] The additive affects the crystallization process of the perovskite material, improves the crystallization quality of the perovskite material, reduces the grain boundaries and / or surface defects of the perovskite material, and improves the device performance of the solar cell 100.

[0070] The oxoacid group refers to an acidic functional group composed of one or more oxygen atoms, one or more hydrogen atoms, and at least one non-hydrogen atom (usually a non-metal element) in the chemical structure. Such groups can release hydrogen ions H +The derivative of the carboxylic acid group refers to a new compound containing the carboxylic acid group or a partial structure thereof generated by chemical reaction of the carboxylic acid group. The derivative of the carboxylic acid group retains the basic structural characteristics of the carboxylic acid group, but the overall chemical properties may differ due to structural changes.

[0071] The chemical formula of the thiocyanic acid group is -S-C≡N. The derivative of the thiocyanic acid group refers to a new compound containing the thiocyanic acid group or a partial structure thereof generated by chemical reaction of the thiocyanic acid group. The derivative of the thiocyanic acid group retains the basic structural characteristics of the thiocyanic acid group, but the overall chemical properties may differ due to structural changes.

[0072] The amide group refers to a structural unit formed by the connection of an acyl group (R-CO-, R represents an organic group) and an amino group (-NH2) through a single bond. The derivative of the amide group refers to a new compound containing the amide group or a partial structure thereof generated by chemical reaction of the amide group. The derivative of the amide group retains the basic structural characteristics of the amide group, but the overall chemical properties may differ due to structural changes.

[0073] The chemical formula of the hydrazide group is The derivative of the hydrazide group refers to a new compound containing the hydrazide group or a partial structure thereof generated by chemical reaction of the hydrazide group. The derivative of the hydrazide group retains the basic structural characteristics of the hydrazide group, but the overall chemical properties may differ due to structural changes.

[0074] The chemical formula of the guanidine group is The derivative of the guanidine group refers to a new compound containing the guanidine group or a partial structure thereof generated by chemical reaction of the guanidine group. The derivative of the guanidine group retains the basic structural characteristics of the guanidine group, but the overall chemical properties may differ due to structural changes.

[0075] All the above-mentioned functional groups have elements containing lone pair electrons, and the electron cloud density of the lone pair electrons is relatively high, which is in a state of electron richness. It can form a certain force between the cations of the perovskite material in a state of electron deficiency, so that the additive can affect the nucleation and growth rate of the perovskite material, specifically to slow down the nucleation and growth rate of the perovskite material, so that the grain size of the formed perovskite material is increased, the crystallization quality of the perovskite material is improved, the grain boundaries and / or surface defects of the perovskite material are reduced, and the device performance of the solar cell 100 is improved.

[0076] The anion of the perovskite material includes one or more of fluorine anion, chlorine anion, bromine anion or iodine anion.

[0077] Embodiments of the present application introduce an additive in the light absorbing layer 10, the additive has an element containing lone pair electrons (such as one or more of oxygen element, sulfur element, nitrogen element, phosphorus element), using the force of action between the lone pair electrons and the perovskite material, the rate of nucleation and growth of the perovskite material is slowed down, the grain size of the formed perovskite material is increased, the crystallization quality of the perovskite material of halide anions is improved, the grain boundaries and / or surface defects of the perovskite material are reduced, and the device performance of the solar cell 100 is improved.

[0078] In some embodiments, the oxygen-containing acid group includes one or more of a carboxylic acid group, a sulfonic acid group, a phosphonic acid group.

[0079] The chemical formula of the carboxylic acid group is -COOH. The chemical formula of the sulfonic acid group is -SO3H. The chemical formula of the phosphonic acid group is -PO3H2.

[0080] The additive provided by embodiments of the present application includes an oxygen-containing acid group (including one or more of a carboxylic acid group, a sulfonic acid group, a phosphonic acid group), which has a lone pair of electrons. The lone pair of electrons has a strong force of action on the perovskite material (such as the A-site cation and / or the B-site cation of the perovskite material). The force of action is beneficial for regulating the crystallization rate of the perovskite material, so that after the perovskite material rapidly nucleates, there is a slow growth process. The grain size of the formed perovskite material is larger than that of the perovskite material without introducing the additive. The crystallization quality of the perovskite is improved. In addition, due to the large grain size of the perovskite material, the grain boundaries and / or surface defects are reduced, thereby improving the crystallization quality of the perovskite.

[0081] In some embodiments, the additive further includes one or more of a substituted or unsubstituted hydrocarbon group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group.

[0082] The hydrocarbon group refers to a group left after a hydrogen atom is lost from a corresponding hydrocarbon. In some embodiments, the hydrocarbon group includes one or more of an alkyl group, an alkenyl group, and an alkinyl group. The aryl group refers to a group formed by removing a hydrogen atom from an unsaturated carbocyclic compound having special stability, and the atoms constituting the ring system are carbon atoms. The heteroaryl group refers to a group formed by replacing some carbon elements in the ring structure of the aryl group with non-carbon elements.

[0083] Embodiments of the present application introduce the above-mentioned groups to make the additive have a hydrophobic group. The hydrophobic group has small polarity and is easy to stretch on the outside of the perovskite material, so that the periphery of the perovskite material is hydrophobic, water and oxygen are not easy to enter the perovskite material, and the stability of the perovskite material is improved.

[0084] In some embodiments, the substituted group includes one or more of a halogen, a hydroxyl group, and an acyl group.

[0085] Embodiments of the present application regulate the performance of the additive by introducing the above-mentioned substituted groups, which is conducive to improving the crystalline quality of the halide perovskite material, reducing the grain boundaries and / or surface defects of the perovskite material, and improving the device performance of the solar cell 100.

[0086] In some embodiments, the additive comprises one or more of formic acid and derivatives thereof, benzoic acid and derivatives thereof, trifluorobenzoic acid and derivatives thereof, 6-isoquinoline carboxylic acid and derivatives thereof, acetic acid and derivatives thereof, trifluoroacetic acid and derivatives thereof, acrylic acid and derivatives thereof, sulfonic acid and derivatives thereof, benzene sulfonic acid and derivatives thereof, thiocyanic acid and derivatives thereof, phosphoric acid and derivatives thereof, phenethylamine and derivatives thereof, N-(2-aminoethyl)benzamide and derivatives thereof, 4-hydroxybenzamide and derivatives thereof, 5-hydroxyisophthalamide and derivatives thereof, phthalhydrazide and derivatives thereof, 2-aminobenzamide and derivatives thereof, 4-hydroxybenzhydrazide and derivatives thereof, carbamide and derivatives thereof, guanidine and derivatives thereof.

[0087] The chemical formula of formic acid is HCOOH. The chemical formula of benzoic acid is The chemical formula of trifluorobenzoic acid is The chemical formula of 6-isoquinoline carboxylic acid is The chemical formula of acetic acid is CH3COOH. The chemical formula of trifluoroacetic acid is The chemical formula of acrylic acid is The chemical formula of sulfonic acid is RSO3H, and R refers to an aryl group. The chemical formula of benzene sulfonic acid is The chemical formula of thiocyanic acid is HS-C≡N. The chemical formula of phosphoric acid is In some embodiments, the derivatives of the above-mentioned additives comprise one or more of cesium salts, ammonium salts (for example, one or both of methylammonium salt and ethylammonium salt), guanidine salts / compounds, phenethylamine salts / compounds, amide salts / compounds, hydrazide salts / compounds, formamidine salts / compounds of the above-mentioned additives.

[0088] The chemical formula of phenethylamine is The chemical formula of N-(2-aminoethyl)benzamide is The chemical formula of 4-hydroxybenzamide is The chemical formula of 5-hydroxyisophthalamide is The chemical formula of phthalhydrazide is The chemical formula of 2-aminobenzamide is The chemical formula of 4-hydroxybenzhydrazide is The chemical formula of carbamide is The chemical formula of guanidine is In some embodiments, the derivatives of the above-mentioned additives include one or more of carboxylate / compound, acrylate / compound, benzoate / compound, sulfonate / compound, phosphate / compound, hypophosphite / compound of the above-mentioned additives.

[0089] Embodiments of the present application delay the rate of nucleation and growth of perovskite material, increase the grain size of the formed perovskite material, improve the crystalline quality of halide anion perovskite material, reduce the grain boundaries and / or surface defects of the perovskite material, and improve the device performance of the solar cell 100 by providing the above-mentioned additives.

[0090] In some embodiments, the derivatives include a salt, and the cation of the salt includes one or more of methylammonium cation, cesium cation, formamidinium cation, guanidinium cation, amide cation, and hydrazine cation.

[0091] Embodiments of the present application improve the crystalline quality of halide anion perovskite material, reduce the grain boundaries and / or surface defects of the perovskite material, and improve the device performance of the solar cell 100 by providing the above-mentioned derivatives.

[0092] In some embodiments, the anion of the perovskite material includes any one of fluoride anion, chloride anion, bromide anion, or iodide anion.

[0093] Embodiments of the present application solve the problem of mixed halogen phase separation, have a more continuous and uniform band structure, and have a more stable material performance compared to mixed halide anion perovskite material, and are beneficial to improving the device performance of the solar cell 100 by providing the above-mentioned single halide anion perovskite material.

[0094] In some embodiments, the anion of the perovskite material includes iodide anion.

[0095] The single iodide anion perovskite material provided by embodiments of the present application has good synergies with the additives, the formed perovskite material has good crystalline quality, and is beneficial to improving the device performance of the solar cell 100.

[0096] In some embodiments, the band gap of the perovskite material is in the range of 1.20 eV to 2.30 eV. The band gap of the perovskite material can be 1.20 eV, 1.25 eV, 1.30 eV, 1.35 eV, 1.40 eV, 1.45 eV, 1.50 eV, 1.55 eV, 1.60 eV, 1.65 eV, 1.70 eV, 1.75 eV, 1.80 eV, 1.85 eV, 1.90 eV, 1.95 eV, 2.00 eV, 2.05 eV, 2.10 eV, 2.15 eV, 2.20 eV, 2.25 eV, 2.30 eV, or the like, or a range defined by any two of the above values, for example, 1.20 eV to 1.40 eV, 1.30 eV to 1.50 eV, 1.40 eV to 1.60 eV, 1.50 eV to 1.70 eV, 1.60 eV to 1.80 eV, 1.70 eV to 1.90 eV, 1.80 eV to 2.00 eV, 1.90 eV to 2.10 eV, 2.00 eV to 2.20 eV, 2.10 eV to 2.30 eV, or the like.

[0097] In the embodiments of the present application, the perovskite material with the band gap in the above range can effectively absorb the solar spectrum in the visible light to near-infrared region, more solar energy can be converted into electrical energy, and the photoelectric conversion efficiency is improved, which is suitable for the application of the solar cell 100.

[0098] In some embodiments, the thickness of the light absorbing layer 10 is in the range of 200 nm to 1000 nm. The thickness of the light absorbing layer 10 can be 200 nm, 210 nm, 220 nm, 230 nm, 240 nm, 250 nm, 260 nm, 270 nm, 280 nm, 290 nm, 300 nm, 310 nm, 320 nm, 330 nm, 340 nm, 350 nm, 360 nm, 370 nm, 380 nm, 390 nm, 400 nm, 410 nm, 420 nm, 430 nm, 440 nm, 450 nm, 460 nm, 470 nm, 480 nm, 490 nm, 500 nm, 510 nm, 520 nm, 530 nm, 540 nm, 550 nm, 560 nm, 570 nm, 580 nm, 590 nm, 600 nm, 610 nm, 620 nm, 630 nm, 640 nm, 650 nm, 660 nm, 670 nm, 680 nm, 690 nm, 700 nm, 710 nm, 720 nm, 730 nm, 740 nm, 750 nm, 760 nm, 770 nm, 780 nm, 790 nm, 800 nm, 810 nm, 820 nm, 830 nm, 840 nm, 850 nm, 860 nm, 870 nm, 880 nm, 890 nm, 900 nm, 910 nm, 920 nm, 930 nm, 940 nm, 950 nm, 960 nm, 970 nm, 980 nm, 990 nm, 1000 nm, or a range between any two of the above values, for example, 200 nm to 400 nm, 300 nm to 500 nm, 400 nm to 600 nm, 500 nm to 700 nm, 600 nm to 800 nm, 700 nm to 900 nm, 800 nm to 1000 nm, etc.

[0099] In embodiments of the present application, the light absorbing layer 10 with a thickness in the above range can absorb most of the photons in the visible to near infrared range due to the high light absorption coefficient of the perovskite material, which reduces the amount of perovskite material used and helps to reduce the cost and improve the performance of the solar cell 100.

[0100] In some embodiments, the perovskite material has a general chemical formula of ABX3 or A2CDX6.

[0101] wherein A is one or more of cesium cation, formamidinium cation, methylammonium cation, rubidium cation, and guanidinium cation; B includes one or both of tin cation and lead cation; C includes silver cation; D includes one or more of bismuth cation, antimony cation, and indium cation; and X includes any one of fluorine anion, chlorine anion, bromine anion, and iodine anion.

[0102] In the embodiments of the present application, the perovskite material provided above has a relatively continuous and uniform energy band structure and relatively stable material performance, which is conducive to improving the device performance of the solar cell 100.

[0103] Please refer to Figure 2 , Figure 2 is a second structural schematic diagram of a solar cell provided by the embodiments of the present application.

[0104] In some embodiments, referring to Figure 2 , the solar cell 100 further comprises a hole transport layer 40, which is located between the first electrode layer 20 or the second electrode layer 30 and the light absorbing layer 10.

[0105] The hole transport layer 40 refers to a functional layer for extracting and transporting photo-generated holes generated by the light absorbing layer 10. In some embodiments, the hole transport layer 40 can be directly arranged on one side surface of the light absorbing layer 10. In some embodiments, the hole transport layer 40 can also be arranged apart from the light absorbing layer 10 by a passivation layer. The hole transport material is used for extracting and transporting photo-generated holes.

[0106] In the embodiments of the present application, the hole transport layer 40 provided above can synergize with the light absorbing layer 10 provided by the embodiments of the present application to improve the device performance of the solar cell 100.

[0107] In some embodiments, the hole transport layer 40 comprises a hole transport material, and the hole transport material comprises one or more of nickel oxide, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(3-hexylthiophene), poly 3,4-ethylenedioxythiophene: polystyrene sulfonate, and 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene.

[0108] The embodiments of the present application synergize the hole transport layer 40 comprising the hole transport material described above with the light absorbing layer 10 provided by the embodiments of the present application to improve the device performance of the solar cell 100.

[0109] Please refer to Figures 3-5 , Figure 3 is a third structural schematic diagram of a solar cell provided by the embodiments of the present application, Figure 4 is a fourth structural schematic diagram of a solar cell provided by the embodiments of the present application, Figure 5 is a fifth structural schematic diagram of a solar cell provided by the embodiments of the present application.

[0110] In some embodiments, referring to Figure 3The solar cell 100 further comprises an electron transport layer 50, which is located between the second electrode layer 30 or the first electrode layer 20 and the light absorbing layer 10.

[0111] The electron transport layer 50 refers to a functional layer for extracting and transporting photo-generated electrons generated by the light absorbing layer 10. In some embodiments, the electron transport layer 50 can be directly arranged on one side surface of the light absorbing layer 10. In some embodiments, the electron transport layer 50 can also be arranged apart from the light absorbing layer 10 through a passivation layer. The electron transport material is used for extracting and transporting photo-generated electrons. In some embodiments, the solar cell 100 comprises a hole transport layer 40 arranged on one side of the light absorbing layer 10 and an electron transport layer 50 arranged on the other side of the light absorbing layer 10 away from the hole transport layer 40.

[0112] In the embodiments of the present application, the above-mentioned electron transport layer 50 can synergize with the light absorbing layer 10 provided by the embodiments of the present application to improve the device performance of the solar cell 100.

[0113] In some embodiments, the electron transport layer comprises an electron transport material, and the electron transport material comprises one or more of tin oxide, titanium oxide, carbon 60, and fullerene derivative.

[0114] The embodiments of the present application improve the device performance of the solar cell 100 by synergizing the electron transport layer 50 comprising the above-mentioned electron transport material with the light absorbing layer 10 provided by the embodiments of the present application.

[0115] In some embodiments, referring to Figure 4 A transverse solar cell 100 is provided, which comprises a substrate 60, a first electrode layer 20, a hole transport layer 40, a light absorbing layer 10, an electron transport layer 50, and a second electrode layer 30.

[0116] In some embodiments, referring to Figure 5 A formal solar cell 100 is provided, which comprises a substrate 60, a first electrode layer 20, an electron transport layer 50, a light absorbing layer 10, a hole transport layer 40, and a second electrode layer 30.

[0117] In a second aspect, the embodiments of the present application provide a preparation method of any solar cell 100 provided in the first aspect, comprising:

[0118] S1, providing a substrate structure, wherein the substrate structure at least comprises a first electrode layer 20.

[0119] The substrate structure refers to an intermediate structure comprising the first electrode layer 20.

[0120] In some embodiments, the substrate structure further comprises a substrate 60 disposed on one side of the first electrode layer 20. In some embodiments, the substrate 60 is a rigid material, and in some other embodiments, the substrate 60 is a flexible material, which is configured as needed. In some embodiments, the substrate 60 is a light-transmissive material, which is configured to allow light to reach the light-absorbing layer 10. In some embodiments, the light-absorbing layer 10 is disposed on the side of the first electrode layer 20 away from the substrate 60.

[0121] In some embodiments, the substrate structure further comprises a first carrier transport layer disposed on the side of the first electrode layer 20 away from the substrate 60, in addition to the substrate 60 and the first electrode layer 20. In some embodiments, the first carrier transport layer can be one of the hole transport layer 40 and the electron transport layer 50. In some embodiments, the light-absorbing layer 10 is disposed on the side of the first carrier transport layer away from the substrate 60.

[0122] In some embodiments, the substrate structure further comprises a first passivation layer disposed on the side of the first carrier transport layer away from the substrate 60, in addition to the substrate 60, the first electrode layer 20, and the first carrier transport layer. In some embodiments, the light-absorbing layer 10 is disposed on the side of the first passivation layer away from the substrate 60.

[0123] In some embodiments, the first electrode layer 20 can be a light-transmissive material. In some embodiments, the first electrode layer 20 can be made of at least one of fluorine-doped tin dioxide, indium tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and zinc-doped indium oxide.

[0124] S2, a perovskite precursor solution is disposed on the substrate structure, the perovskite precursor solution comprises a perovskite precursor and an additive, the additive comprises one or more functional groups, the functional groups comprise one or more of an oxoacid group and its derivative, a thiocyanic acid group and its derivative, an amide group and its derivative, a hydrazide group and its derivative, a guanidine group and its derivative, the anion of the perovskite material comprises one or more of a fluoride anion, a chloride anion, a bromide anion, or an iodide anion, and after a nucleation and crystallization process, the perovskite precursor solution forms the light-absorbing layer 10.

[0125] The perovskite precursor refers to a precursor component of the perovskite material. The perovskite precursor solution refers to a product formed by dispersing the precursor component of the light-absorbing layer 10 in a solvent. The nucleation and crystallization process refers to a means of attaching the perovskite precursor solution to the surface of the substrate structure in a certain manner, and making the perovskite precursor nucleate and grow into a crystal structure of the perovskite material. For example, the nucleation and crystallization process is a process of forming the perovskite precursor solution on the substrate structure by spin coating, spray coating, or blade coating, and then performing a heat treatment on the formed product to form the light-absorbing layer 10. The treatment temperature and treatment time of the heat treatment are selected to form the light-absorbing layer 10. In some embodiments, the heat treatment can be a heat sintering treatment and / or an annealing treatment.

[0126] S3, preparing a second electrode layer 30 on the light-absorbing layer 10.

[0127] In some embodiments, in addition to the second electrode layer 30, a second carrier transport layer can also be prepared on the light-absorbing layer 10. In some embodiments, the second carrier transport layer can be the other one of the hole transport layer 40 and the electron transport layer 50. In some embodiments, the second carrier transport layer can be arranged on the side of the light-absorbing layer 10 away from the substrate structure, and the second electrode layer 30 can be arranged on the side of the second carrier transport layer away from the substrate structure.

[0128] In some embodiments, in addition to the second carrier transport layer and the second electrode layer 30 arranged in layers, a second passivation layer can also be prepared on the light-absorbing layer 10. In some embodiments, the second passivation layer can be arranged on the side of the light-absorbing layer 10 away from the substrate structure, the second carrier transport layer can be arranged on the side of the second passivation layer away from the substrate structure, and the second electrode layer 30 can be arranged on the side of the second carrier transport layer away from the substrate structure.

[0129] In some embodiments, the second electrode layer 30 can include at least one of silver Ag, copper Cu, carbon C, gold Au, aluminum Al, indium tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and zinc-doped indium oxide.

[0130] In the embodiments of the present application, the solar cell 100 formed by the above preparation method introduces an additive in the light-absorbing layer 10, the additive has an element containing a lone pair of electrons, and the rate of nucleation and growth of the perovskite material is slowed down by using the force of action between the lone pair of electrons and the perovskite material, the grain size of the formed perovskite material is increased, the crystallization quality of the halide anion perovskite material is improved, the grain boundaries and / or surface defects of the perovskite material are reduced, and the device performance of the solar cell 100 is improved.

[0131] In some embodiments, the perovskite precursor comprises divalent metal cations, and the molar amount of the additive is 0.01% to 20% of the molar amount of the divalent metal cations. The molar amount of the additive can be 0.01%, 0.02%, 0.05%, 0.1%, 0.2%, 0.5%, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20% of the molar amount of the divalent metal cations, or a range between any two of the above values, for example, 0.01% to 3%, 1% to 5%, 3% to 10%, 8% to 12%, 10% to 15%, 12% to 18%, 15% to 20%, etc.

[0132] In the embodiments of the present application, the molar amount of the additive is within the above range, which is beneficial to regulating the nucleation and growth rate of the perovskite material, promoting the grain growth of the perovskite material, improving the crystallization quality of the perovskite material, reducing the grain boundaries and / or surface defects of the perovskite material, improving the carrier transport efficiency, and improving the device performance of the solar cell 100.

[0133] Please refer to Figure 6 , Figure 6 is a structural schematic diagram of an electrical equipment provided by the embodiments of the present application.

[0134] In a third aspect, referring to Figure 6 , the embodiments of the present application provide an electrical equipment 1000 comprising any of the solar cells 100 provided in the first aspect or prepared by the preparation method of the solar cell 100 provided in the second aspect. The electrical equipment 1000 adopts the solar cell 100 provided by the present application and has at least the same advantages as the solar cell 100, which can improve the battery performance of the electrical equipment 1000.

[0135] In the embodiments of the present application, the solar cell 100 serves as the power source of the electrical equipment 1000, realizing the normal operation of the electrical equipment 1000. The electrical equipment 1000 adopts the solar cell 100 provided by the present application and has at least the same advantages as the solar cell 100, which can improve the battery performance of the electrical equipment 1000. As an example, the electrical equipment 1000 can comprise lighting devices, display devices, or new energy vehicles, etc.

[0136] Please refer to Figure 7 , Figure 7 is a structural schematic diagram of a power generation equipment provided by the embodiments of the present application.

[0137] In a fourth aspect, referring to Figure 7The embodiment of the present application provides a power generation device 2000 comprising any solar cell 100 provided in the first aspect or the solar cell 100 prepared by the preparation method of the solar cell 100 provided in the second aspect. The power generation device 2000 adopts the solar cell 100 provided in the present application, and at least has the same advantages as the solar cell 100, so that the power generation performance of the power generation device 2000 can be improved.

[0138] In the embodiment of the present application, the solar cell 100 is used as an energy source of the power generation device 2000, and realizes the power output of the power generation device 2000. The power generation device 2000 adopts the solar cell 100 provided in the present application, and at least has the same advantages as the solar cell 100, so that the power generation performance of the power generation device 2000 can be improved. As an example, the power generation device 2000 can be applied to the fields of building power supply, wearable device power supply, smart phone power supply, vehicle-mounted battery power supply and the like.

[0139] The beneficial effects of the present application are further illustrated in the following embodiments.

[0140] In order to make the technical problems, technical solutions and beneficial effects solved by the embodiments of the present application clearer, the following will be further described in detail in combination with the embodiments and the drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, not all the embodiments. The description of the at least one exemplary embodiment is actually only illustrative, but not as any limitation on the present application and its application. Based on the embodiments in the present application, all other embodiments obtained without creative labor belong to the scope of protection of the present application.

[0141] Embodiment 1

[0142] Preparation of the solar cell 100:

[0143] (1) Take FTO (fluorine-doped tin dioxide) conductive glass with a size of 2.0 cm*2.0 cm, and remove 0.35 cm of fluorine-doped tin dioxide from both ends by laser etching to expose the glass substrate.

[0144] (2) The etched FTO conductive glass is sequentially ultrasonically cleaned with water, acetone and isopropyl alcohol for two times respectively; the solvent on the surface of the FTO conductive glass is blown dry under a nitrogen gun, and the FTO conductive glass is placed in an ultraviolet ozone machine for ultraviolet ozone treatment.

[0145] (3) The precursor solution (solvent is water) including nickel oxide nanoparticles with a concentration of 10 mg / mL is spin-coated on the FTO conductive glass after ultraviolet ozone treatment at a speed of 4000 rpm, and annealing treatment is performed on a hot stage at 100°C for 30 min, and then cooled to room temperature to form a hole transport layer 40 with a thickness of 20 nm.

[0146] (4) Lead iodide, formamidinium iodide, cesium iodide, methyl amine iodide were weighed and dissolved in a solvent formed by mixing DMF (N,N-dimethylformamide) and DMSO (dimethyl sulfoxide) in a volume ratio of 4:1 at a molar ratio of 1:0.7885:0.05:0.1615 to form a precursor solution with a concentration of 1.3 mol / L. Then, 1% of an additive (methyl ammonium thiocyanate) in terms of the molar amount of lead iodide was added to the formed precursor solution, mixed and stirred for 3 h, filtered with a 0.22 μm organic filter membrane to obtain a perovskite precursor solution. The perovskite precursor solution was spin-coated on the obtained hole transport layer 40 at a rotation speed of 3000 rpm, and then annealed on a hot stage at 100°C for 30 min and cooled to room temperature to obtain a light absorbing layer 10 with a thickness of 550 nm. The chemical formula of the perovskite material of the light absorbing layer 10 is Cs 0.05 (FA 0.83 MA 0.17 ) 0.95 PbI3.

[0147] (5) A chlorobenzene solution of PCBM (fullerene derivative) with a concentration of 20 mg / mL was spin-coated on the light absorbing layer 10 at a rotation speed of 1500 rpm, and annealed at 100°C for 10 min to obtain a preliminary product with a thickness of 30 nm. After cooling to room temperature, an isopropanol solution of BCP (bathocuproin, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) with a concentration of 0.5 mg / mL was spin-coated at a rotation speed of 5000 rpm to form an intercalation layer with a thickness of 5 nm, thereby obtaining an electron transport layer 50.

[0148] (6) Edge cleaning, the obtained intermediate product was placed in an evaporation machine, and metal Au (gold) was evaporated at an evaporation rate of 1 A / s to obtain a second electrode layer 30 with a thickness of 80 nm, and the obtained solar cell 100 was marked as Cell 1.

[0149] Examples 2-9 were similar to Example 1, except that the amount of additive added in step (4) of Examples 2-9 was different from that of Example 1. The solar cells 100 obtained in Examples 2-9 were marked as Cell 2-Cell 9, respectively.

[0150] Example 10 was similar to Example 1, except that the perovskite precursor solution used in step (4) of Example 10 was different from that of Example 1. Specifically, lead iodide, formamidinium iodide, methyl amine iodide were weighed and dissolved in a solvent formed by mixing DMF (N,N-dimethylformamide) and DMSO (dimethyl sulfoxide) in a volume ratio of 4:1 at a molar ratio of 1:0.83:0.17 to form a precursor solution with a concentration of 1.3 mol / L. The chemical formula of the perovskite material of the light absorbing layer 10 is FA 0.83 MA 0.17PbI3. The solar cell 100 obtained in Example 10 is labeled as Cell 10.

[0151] Example 11 is similar to Example 1, except that the precursor solution of perovskite used in step (4) of Example 11 is different from that of Example 1. Specifically, lead bromide and cesium bromide are weighed and dissolved in a solvent formed by mixing DMF (N,N-dimethylformamide) and DMSO (dimethyl sulfoxide) in a volume ratio of 4:1, to form a precursor solution with a concentration of 1.3 mol / L, at a molar ratio of 1:1. The chemical formula of the perovskite material of the light absorbing layer 10 is CsPbBr3. The solar cell 100 obtained in Example 11 is labeled as Cell 11.

[0152] Example 12 is similar to Example 1, except that the precursor solution of perovskite used in step (4) of Example 12 is different from that of Example 1. Specifically, the precursor solution of this example is prepared by weighing lead iodide, methylformamidinium iodide, bromomethylformamidinium, and bromomethylamine, and dissolving them in a solvent formed by mixing DMF (N,N-dimethylformamide) and DMSO (dimethyl sulfoxide) in a volume ratio of 4:1, at a molar ratio of 1:0.49:0.34:0.17, to form a precursor solution with a concentration of 1.3 mol / L.

[0153] Examples 13 to 32 are similar to Example 1, except that the additive used in step (4) of Examples 13 to 32 is different from that of Example 1. The solar cell 100 obtained in Examples 13 to 32 is labeled as Cell 12 to Cell 31, respectively. Example 33 is similar to Example 1, except that the solar cell 100 of Example 33 is a formal structure. After step (2) and before step (4), an electron transport layer 50 is prepared, which includes the following steps: a water-based colloid dispersion solution with a mass fraction of 15% tin oxide is diluted with water at a ratio of 1:3, stirred and filtered with a 0.22 μm filter membrane to obtain a precursor solution, the obtained precursor solution is added dropwise on the FTO conductive glass treated by ultraviolet ozone, and spin-coated at a speed of 3000 rpm for 30 s and then annealed at 150°C for 15 min to obtain an electron transport layer 50 with a thickness of 20 nm. In step (4), the light absorbing layer 10 is formed on the surface of the electron transport layer 50 away from the FTO conductive glass. After step (4) and before step (6), a hole transport layer 40 is prepared, which includes the following steps: first, prepare a Li-TFSI acetonitrile solution with a concentration of 520 mg / mL, and then ultrasonic dissolve for 10 min. Then prepare a FK209 acetonitrile solution with a concentration of 300 mg / mL. Then prepare a Spiro-OMeTAD chlorobenzene solution with a concentration of 73 mg / mL, and then ultrasonic dissolve for 10 min. Add 18 μL of the Li-TFSI acetonitrile solution, 30 μL of tBP and 29 μL of the FK209 acetonitrile solution to 1 mL of the Spiro-OMeTAD chlorobenzene solution, and then stir to obtain a precursor solution. The obtained precursor solution is added dropwise on the light absorbing layer 10, and spin-coated at a speed of 3000 rpm for 30 s to obtain a hole transport layer 40 with a thickness of 70 nm. The hole transport layer 40 is formed on the surface of the light absorbing layer 10 away from the FTO conductive glass. The solar cell 100 obtained in Example 33 is labeled as Cell 33.

[0154] Comparative Example 1 is similar to Example 1, except that no additive is added in step (4) of Comparative Example 1. The solar cell 100 obtained in Comparative Example 1 is labeled as Cell 34.

[0155] Please refer to Figure 8 and Figure 9 , Figure 8 is a micro-morphology image of the light absorbing layer prepared in Example 1, Figure 9 is a micro-morphology image of the light absorbing layer prepared in Comparative Example 1. Please refer to Figure 8 and Figure 9 , the perovskite material of the light absorbing layer 10 of Example 1 has larger crystal grains, fewer grain boundaries and fewer surface defects compared to the perovskite material of the light absorbing layer 10 of Comparative Example 1.

[0156] Comparative Example 2 is similar to Example 12, except that no additive is added in step (4) of Comparative Example 2. The solar cell 100 obtained in Comparative Example 2 is labeled as Cell 35.

[0157] Comparative Example 3 is similar to Example 33, except that no additive is added in step (4) of Comparative Example 3. The solar cell 100 obtained in Comparative Example 3 is labeled as Cell 36.

[0158] The solar cell 100 of each example and comparative example is subjected to performance testing:

[0159] The solar cell 100 is subjected to performance testing according to the IEC61215 standard using a solar simulator of Guangyan, and the intensity of the light is calibrated using a crystalline silicon solar cell to reach one sun intensity (AM1.5 solar test standard). The solar cell 100 is connected to a digital source meter, and the photoelectric conversion efficiency under light is measured. The photoelectric conversion efficiency on the third day can reflect the photoelectric conversion capacity of the solar cell 100, and the photoelectric conversion efficiency on the thirtieth day can reflect the stability of the solar cell 100.

[0160] Table 1: Performance test results of the solar cell of Examples 1-32 and Comparative Examples 1-3

[0161]

[0162]

[0163]

[0164]

[0165] Note: The molar ratio of the additive refers to the percentage of the molar amount of the additive to the molar amount of the divalent cation.

[0166] By analyzing the test data of Examples 1-32 and Comparative Example 1, compared with the solar cell 100 without the additive, the photoelectric conversion efficiency of the solar cell 100 with the additive is improved on the third day and the thirtieth day, except for Example 11, which indicates that the additive provided by the present application is beneficial to improving the photoelectric conversion efficiency of the solar cell 100. Among them, Example 11 is a full-inorganic perovskite cell, and the photoelectric conversion efficiency of the solar cell 100 is relatively low.

[0167] By analyzing the test data of Example 12 and Comparative Example 2, compared with the solar cell 100 without the additive, the photoelectric conversion efficiency of the solar cell 100 with the additive is improved on the third day and the thirtieth day, which indicates that the additive provided by the present application is beneficial to improving the photoelectric conversion efficiency of the solar cell 100.

[0168] By analyzing the test data of Example 33 and Comparative Example 3, compared with the solar cell 100 without introducing the additive, the solar cell 100 with the additive has improved photoelectric conversion efficiency at the 3rd day and the 30th day, which indicates that the additive provided by the present application is beneficial to improving the photoelectric conversion efficiency of the formal solar cell 100.

[0169] By analyzing the test data of Example 1 to Example 9, adjusting the molar ratio of the additive is beneficial to adjusting the photoelectric conversion efficiency of the solar cell 100.

[0170] By analyzing the test data of Example 1, Example 10 to Example 12, the additive of the present application applied to different perovskite material systems has good photoelectric conversion efficiency.

[0171] By analyzing the test data of Example 13 to Example 32, adjusting the type of the additive is beneficial to adjusting the photoelectric conversion efficiency of the solar cell 100.

[0172] By analyzing the test data of Example 1 and Example 33, the additive of the present application applied to different solar cells 100 has good photoelectric conversion efficiency.

[0173] In several embodiments provided in the present application, it should be understood that the disclosed system, device and method can be implemented in other ways. For example, the device embodiments described above are only schematic, for example, the division of units is only a logical function division, and actual implementation can have another division manner, for example, a plurality of units or components can be combined or integrated into another system, or some features can be ignored or not executed. In addition, the coupling or direct coupling or communication connection between the units shown or discussed can be indirect coupling or communication connection through some interfaces, devices or units, which can be electrical, mechanical or other forms.

[0174] In addition, each functional unit in each embodiment of the present application can be integrated in one processing unit, or each unit can be physically present separately, or two or more units can be integrated in one unit. The above integrated unit can be realized in the form of hardware or in the form of software functional unit.

[0175] The above description is only an embodiment of the present application, and does not limit the patent scope of the present application, and any equivalent structure or equivalent process transformation using the content of the specification and drawings, or direct or indirect application in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A solar cell, characterized by, The solar cell includes a first electrode layer, a light absorbing layer, and a second electrode layer, the light absorbing layer is between the first electrode layer and the second electrode layer, the light absorbing layer includes a perovskite material and an additive, the additive includes one or more functional groups, the functional groups include one or more of an oxygen-containing acid group and its derivative, a thiocyanic acid group and its derivative, an amide group and its derivative, a hydrazide group and its derivative, a guanidine group and its derivative, the anion of the perovskite material includes one or more of a fluoride anion, a chloride anion, a bromide anion, or an iodide anion.

2. The solar cell according to claim 1, characterized in that, The oxygen-containing acid group includes one or more of a carboxylic acid group, a sulfonic acid group, and a phosphonic acid group.

3. The solar cell according to claim 1 or 2, characterized in that, The additive further includes one or more of a substituted or unsubstituted hydrocarbon group, a substituted or unsubstituted aryl group, and a substituted or unsubstituted heteroaryl group.

4. The solar cell according to claim 3, characterized in that, The substituted group includes one or more of a halogen, a hydroxyl group, and an acyl group.

5. The solar cell according to any one of claims 1 to 4, characterized in that, The additive includes one or more of formic acid and its derivative, benzoic acid and its derivative, trifluorobenzoic acid and its derivative, 6-isoquinoline carboxylic acid and its derivative, acetic acid and its derivative, trifluoroacetic acid and its derivative, acrylic acid and its derivative, sulfonic acid and its derivative, benzene sulfonic acid and its derivative, thiocyanic acid and its derivative, phosphoric acid and its derivative, phenethylamine and its derivative, N-(2-aminoethyl)benzamide and its derivative, 4-hydroxybenzamide and its derivative, 5-hydroxyisophthalamide and its derivative, phthalhydrazide and its derivative, 2-aminobenzamide and its derivative, 4-hydroxybenzhydrazide and its derivative, carbonamide and its derivative, guanidine and its derivative.

6. The solar cell according to claim 5, characterized in that, The derivative includes a salt, the cation of the salt includes one or more of a methylamine cation, a cesium cation, a formamidine cation, a guanidine cation, an amide cation, and a hydrazide cation.

7. The solar cell according to any one of claims 1 to 6, characterized in that, The anion of the perovskite material includes any one of a fluoride anion, a chloride anion, a bromide anion, or an iodide anion.

8. The solar cell according to any one of claims 1 to 7, characterized in that, The anion of the perovskite material includes an iodide anion.

9. The solar cell according to any one of claims 1 to 8, characterized in that, The band gap of the perovskite material is in a range of 1.20 eV to 2.30 eV.

10. The solar cell according to any one of claims 1 to 9, characterized in that, The thickness of the light absorbing layer is in a range of 200 nm to 1000 nm.

11. The solar cell according to any one of claims 1 to 10, characterized in that, The perovskite material has a general chemical formula of ABX3 or A2CDX6. A includes one or more of a cesium cation, a formamidine cation, a methylamine cation, a rubidium cation, and a guanidine cation; B includes one or both of a tin cation and a lead cation; C includes a silver cation; D includes one or more of a bismuth cation, an antimony cation, and an indium cation; and X includes one or more of a fluoride anion, a chloride anion, a bromide anion, and an iodide anion.

12. The solar cell according to any one of claims 1 to 11, characterized in that, The solar cell further includes a hole transport layer between the first electrode layer or the second electrode layer and the light absorbing layer.

13. The solar cell of claim 12, wherein, The hole transport layer comprises a hole transport material, the hole transport material comprising one or more of nickel oxide, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(3-hexylthiophene), poly 3,4-ethylenedioxythiophene: polystyrene sulfonate, 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene.

14. The solar cell according to any one of claims 1 to 13, characterized in that, The solar cell further comprises an electron transport layer, the electron transport layer being located between the second electrode layer or the first electrode layer and the light absorbing layer.

15. The solar cell of claim 14, wherein, The electron transport layer comprises an electron transport material, the electron transport material comprising one or more of tin oxide, titanium oxide, carbon 60, fullerene derivative.

16. A method of producing a solar cell as claimed in any one of claims 1 to 15, characterized by, Comprising: providing a substrate structure, the substrate structure comprising at least a first electrode layer; disposing a perovskite precursor solution on the substrate structure, the perovskite precursor solution comprising a perovskite precursor and an additive, the additive comprising one or more functional groups, the functional groups comprising one or more of an oxoacid group and its derivatives, a thiocyanic acid group and its derivatives, an amide group and its derivatives, a hydrazide group and its derivatives, a guanidine group and its derivatives, the anion of the perovskite material comprising one or more of fluoride anion, chloride anion, bromide anion or iodide anion, the perovskite precursor solution forming a light absorbing layer after a nucleation and crystallization process; preparing a second electrode layer on the light absorbing layer.

17. The method of producing a solar cell according to claim 16, wherein The perovskite precursor comprises divalent metal cations, the molar amount of the additive being 0.01% to 20% of the molar amount of the divalent metal cations.

18. An electrical device, characterized by A solar cell comprising the solar cell of any one of claims 1 to 15 or prepared by the method of preparing a solar cell of claim 16 or 17.

19. A power generation apparatus characterized by comprising: A solar cell comprising the solar cell of any one of claims 1 to 15 or prepared by the method of preparing a solar cell of claim 16 or 17.

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