Solar cell, photovoltaic module, power utilization device and power generation device

Abstract

The invention relates to a solar cell, a photovoltaic module, a power utilization device and a power generation device. The solar cell comprises a first electrode layer, a light absorption layer and a second electrode layer which are arranged in a stacked mode. The solar cell is provided with a first groove, a second groove, a third groove and a first protection groove, the first groove divides the first electrode layer, the second groove divides the light absorption layer and part of the second electrode layer and exposes the first electrode layer, the third groove divides the second electrode layer, and the first protection groove divides the light absorption layer and part of the second electrode layer; the second electrode layer comprises a main body conductive part arranged on the light absorption layer and a connecting conductive part arranged in the second groove; the solar cell further comprises a first protection layer and a second protection layer, the first protection layer is arranged in the first protection groove and separates the light absorption layer from the connection conductive part, and the two sides of the second protection layer are wrapped by the main body conductive part and connected with the first protection layer. The projection of the second protection layer on the first electrode layer is smaller than the projection of the light absorption layer on the first electrode layer.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of batteries, in particular to a solar cell, a photovoltaic module, a power utilization device and a power generation device. BACKGROUND

[0002] The statements herein merely provide background information related to the present application and do not necessarily constitute the prior art.

[0003] A solar cell is a new photovoltaic device that directly converts solar radiation energy into electrical energy by using photovoltaic effect. Taking a perovskite solar cell as an example, it uses perovskite material as a light absorption layer, has the advantages of low cost, high weak light effect and wide application scenarios, and is an excellent choice for a new generation of mass-produced photovoltaic cells, which can alleviate the energy crisis. However, the current solar cell has the problem of low photovoltaic performance and stability of the device. Therefore, the traditional technology needs to be improved. SUMMARY

[0004] In order to achieve the above-mentioned purpose, the first aspect of the present application provides a solar cell, a photovoltaic module, a power utilization device and a power generation device capable of improving the photovoltaic performance and stability of the device.

[0005] The present application is realized by the following technical solutions.

[0006] The first aspect of the present application provides a solar cell, comprising a first electrode layer, a light absorption layer and a second electrode layer which are stacked;

[0007] The solar cell is provided with a first groove, a second groove and a third groove, the first groove is arranged in the first electrode layer and divides the first electrode layer along the thickness direction of the solar cell, the second groove divides the light absorption layer and part of the second electrode layer along the thickness direction of the solar cell and exposes the first electrode layer, and the third groove divides the second electrode layer along the thickness direction of the solar cell;

[0008] The second electrode layer comprises a main conductive part arranged on the side of the light absorption layer away from the first electrode layer and a connecting conductive part arranged in the second groove, the main conductive part and the connecting conductive part are connected, and the connecting conductive part is connected with the first electrode layer;

[0009] The solar cell further comprises a first protective groove which separates the light-absorbing layer and part of the second electrode layer along the thickness direction of the solar cell, and the second groove is located between the first protective groove and the third groove; the solar cell further comprises a first protective layer and a second protective layer; the first protective layer is filled in the first protective groove and separates the light-absorbing layer and the connecting conductive part along a first direction, the second protective layer is at least wrapped by the main conductive part along two sides in the thickness direction of the solar cell and connected with the first protective layer, a projection of the second protective layer on the first electrode layer along the thickness direction of the solar cell is smaller than a projection of the light-absorbing layer on the first electrode layer along the thickness direction of the solar cell; the first direction intersects the thickness direction of the solar cell.

[0010] The first protective layer of the above solar cell is arranged in the first protective groove and separates the light-absorbing layer and the connecting conductive part along the first direction, which can prevent the connecting conductive part in the second groove from contacting the side surface of the light-absorbing layer, thereby preventing the corrosion of the connecting conductive part by halogen ions in the light-absorbing layer such as perovskite layer, and also preventing carrier recombination, ion migration, water and oxygen diffusion, and contact between the light-absorbing layer and air, thereby reducing the risk of decomposition of the light-absorbing layer such as perovskite layer and prolonging the service life of the solar cell. In addition, the second protective layer is wrapped on both sides by the main conductive part, and is connected with the first protective layer, and the projection of the second protective layer on the first electrode layer is smaller than the projection of the light-absorbing layer on the first electrode layer, so that the main conductive part below the second protective layer can collect carriers, and therefore the setting of the second protective layer does not expand the dead zone of the cell, and the setting of the second protective layer basically does not affect the carrier transmission between the second electrode layer and the light-absorbing layer, and has little effect on the overall resistance of the cell. At the same time, the first protective layer is connected with the second protective layer embedded in the inside of the main conductive part, which can improve the structural stability of the first protective layer, so that the above solar cell can obtain good photoelectric conversion efficiency and improve the stability of the cell device.

[0011] In some embodiments, the solar cell is provided with a second protective groove which separates the light-absorbing layer and part of the second electrode layer along the thickness direction of the solar cell, and the second protective groove and the first protective groove are respectively located on both sides of the second groove along the first direction;

[0012] The solar cell further comprises a third protective layer and a fourth protective layer, the third protective layer is arranged in the second protective groove and separates the light-absorbing layer from the connecting conductive part in the second groove along a first direction, the fourth protective layer is at least wrapped by the main body conductive part along a side of the solar cell close to the light-absorbing layer in a thickness direction of the solar cell and is connected with the third protective layer, a projection of the fourth protective layer on the first electrode layer along the thickness direction of the solar cell is smaller than a projection of the light-absorbing layer on the first electrode layer along the thickness direction of the solar cell.

[0013] In this way, the third protective layer can also prevent the light-absorbing layer from contacting air and water oxygen diffusing to the light-absorbing layer, and the fourth protective layer has a similar effect to the second protective layer. The light-absorbing layer of each sub-cell formed by being divided by the above groove can be protected by the protective layer on both sides.

[0014] In some embodiments, the third groove separates the connecting conductive part from the third protective layer along a first direction.

[0015] Alternatively, the third groove separates the main body conductive part on the fourth protective layer along a thickness direction of the solar cell.

[0016] In some embodiments, the span of the second protective layer and the fourth protective layer in a first direction is denoted as W1, the width of the second protective layer and the fourth protective layer in the first direction is denoted as L1 and L2 respectively, the spacing between the second protective layer and the fourth protective layer in the first direction is denoted as L3, W1=L1+L2+L3, and the width of the sub-cell divided by the solar cell in the first direction is W2,

[0017] In some embodiments, W1 / W2≤80%.

[0018] In some embodiments, W1 / W2 is 2.5% to 50%, and can be 5% to 40%.

[0019] In some embodiments, W1 is 150 μm to 3000 μm, and can be 150 μm to 700 μm. In this way, the span W1 is in the range, which can make the area of the protective layer deposited in the process appropriate, reduce the deposition difficulty, and simplify the process.

[0020] In some embodiments, the thickness of the second protective layer and the fourth protective layer is independently 5 nm to 200 nm, and can be 10 nm to 80 nm.

[0021] In some embodiments, the width of the first protective groove and the second protective groove is independently 15 μm to 100 μm.

[0022] In some embodiments, the first trench and the first protective trench are staggered with each other in position.

[0023] In some embodiments, the second protective trench exposes the first electrode layer, and the first protective layer is disposed on the first electrode layer in the first protective trench.

[0024] In some embodiments, the first protective layer is embedded in the first electrode layer. In this way, the first protective layer embedded in the first electrode layer can provide more comprehensive isolation protection for the light-absorbing layer and improve the structural stability of the first protective layer.

[0025] In some embodiments, the material of the first protective layer, the second protective layer, the third protective layer, and the fourth protective layer each independently includes at least one of a conductive material and an insulating material.

[0026] In some embodiments, the material of the first protective layer, the second protective layer, the third protective layer, and the fourth protective layer each independently includes one or more of aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, tin oxide, FTO, ITO, AZO, ATO, IGO, BZO, and Cr.

[0027] In some embodiments, the first trench and the first protective trench are in communication with each other, the first protective layer is further embedded in the first trench and separates the first electrode layer, and the material of the first protective layer is an insulating material.

[0028] In this way, the first trench and the first protective trench can be formed in two steps or in one step, and the first protective layer can be filled in the first trench and the first protective trench in one step, thereby greatly simplifying the process. The first protective layer can provide more comprehensive isolation protection for the light-absorbing layer and improve the structural stability of the first protective layer.

[0029] In some embodiments, along the thickness direction of the solar cell, the main conductive part includes a first layer of sub-electrode layer and a second layer of sub-electrode layer arranged in a stack, the first layer of sub-electrode layer is located between the light-absorbing layer and the second layer of sub-electrode layer along the thickness direction of the solar cell, and the second protective layer and / or the fourth protective layer are located on the first layer of sub-electrode layer along the thickness direction of the solar cell and are partially covered by the second layer of sub-electrode layer.

[0030] In some embodiments, the solar cell satisfies one or more of the following conditions:

[0031] (1) The light-absorbing layer is a perovskite light-absorbing layer;

[0032] (2) the solar cell further comprises a first transport layer and a second transport layer, wherein the first transport layer is located between the first electrode layer and the light-absorbing layer, the second transport layer is located between the light-absorbing layer and the third electrode layer, the first transport layer is one of an electron transport layer and a hole transport layer, and the second transport layer is the other of the electron transport layer and the hole transport layer.

[0033] In a second aspect, the present application provides a method for preparing a solar cell, comprising the following steps:

[0034] A first groove is arranged on the first electrode layer for dividing the first electrode layer;

[0035] A light-absorbing layer and a first layer of sub-electrode layer are sequentially arranged on the first electrode layer provided with the first groove, and a first protection groove is arranged on the light-absorbing layer and the first layer of sub-electrode layer;

[0036] A protection layer is formed in the first protection groove and on a part of the first layer of sub-electrode layer;

[0037] A second groove is arranged on the obtained cell structure, and the second groove divides the protection layer, the first layer of sub-electrode layer and the light-absorbing layer on the first layer of sub-electrode layer;

[0038] A second layer of sub-electrode layer is formed on the obtained cell structure and in the second groove;

[0039] A third groove is arranged on the second electrode layer formed by the first layer of sub-electrode layer and the second layer of sub-electrode layer, and the third groove divides the second electrode layer.

[0040] The above preparation method can form a protection layer in one process, simplifying the process, and in addition, the solar cell prepared by the above preparation method has the above-mentioned advantage of excellent device stability. The above preparation method can form a protection layer using a mask, which can avoid damage to the functional layer of the cell compared to etching and other methods.

[0041] In some embodiments, before forming the protection layer, the method further comprises the following steps:

[0042] A second protection groove is arranged on the light-absorbing layer and the first layer of sub-electrode layer, and the second protection groove is arranged spaced apart from the first protection groove;

[0043] Correspondingly, the second protection groove, the first protection groove, the area between the two protection grooves and the part of the first layer of sub-electrode layer adjacent to the protection grooves are exposed to form a protection layer in the exposed area;

[0044] The second groove is located between the second protection groove and the first protection groove.

[0045] In some embodiments, the first groove and the first protective groove are staggered or not staggered with each other.

[0046] In a second aspect of the present application, a preparation method of a solar cell is provided, comprising the following steps:

[0047] A light-absorbing layer and a first sub-electrode layer are sequentially arranged on the first electrode layer, a first protective groove is arranged on the light-absorbing layer and the first sub-electrode layer, and a first groove is arranged on the first electrode layer below the first protective groove;

[0048] A protective layer is formed on the first groove, in the first protective groove, and on a part of the first sub-electrode layer;

[0049] A second groove is arranged on the obtained cell structure, and the second groove divides the protective layer on the first sub-electrode layer, the first sub-electrode layer, and the light-absorbing layer;

[0050] A second sub-electrode layer is formed on the obtained cell structure and in the second groove;

[0051] A third groove is arranged on a second electrode layer composed of the first sub-electrode layer and the second sub-electrode layer, and the third groove divides the second electrode layer.

[0052] In this way, the first groove and the first protective groove are formed directly through one process, and then the protective layer is formed, which further simplifies the process, and the first protective layer is embedded in the first electrode layer, which can more comprehensively protect the light-absorbing layer and improve the structural stability of the first protective layer.

[0053] A third aspect of the present application provides a photovoltaic module, comprising the solar cell provided in the first aspect of the present application and the solar cell prepared by the preparation method provided in the second aspect of the present application.

[0054] A fourth aspect of the present application provides an electric device, comprising at least one selected from the solar cell provided in the first aspect of the present application, the solar cell prepared by the preparation method provided in the second aspect of the present application, and the photovoltaic module provided in the third aspect of the present application.

[0055] A fifth aspect of the present application provides a power generation device, comprising at least one selected from the solar cell provided in the first aspect of the present application, the solar cell prepared by the preparation method provided in the second aspect of the present application, and the photovoltaic module provided in the third aspect of the present application.

[0056] Details of one or more embodiments of the present application are presented in the following drawings and description. Other features, objects, and advantages of the present application will become apparent from the description, drawings, and claims. BRIEF DESCRIPTION OF DRAWINGS

[0057] For a better description and illustration of the embodiments or examples provided by the present application, reference can be made to one or more of the accompanying drawings. Additional details or examples used to describe the drawings should not be considered as limiting the scope of the disclosed application, the presently described embodiments or examples, and any one of the best modes of these applications presently understood. Moreover, in all the drawings, the same reference numbers are used to represent the same components. In the drawings:

[0058] Figure 1 is a schematic diagram of a partial cross-sectional structure of a solar cell according to an embodiment of the present application.

[0059] Figure 2 is a schematic diagram of a partial cross-sectional structure of a solar cell according to another embodiment of the present application.

[0060] Figure 3 is a schematic diagram of a partial cross-sectional structure of a solar cell according to another embodiment of the present application.

[0061] Figure 4 is a schematic diagram of a partial cross-sectional structure of a solar cell according to another embodiment of the present application.

[0062] Figure 5 is a schematic diagram of a partial cross-sectional structure of a solar cell according to another embodiment of the present application. Figure 1 is a schematic diagram of a partial cross-sectional structure of a solar cell according to another embodiment of the present application.

[0063] Figure 6 is a schematic diagram of a partial cross-sectional structure of a solar cell according to another embodiment of the present application. Figure 1 is a schematic diagram of a partial cross-sectional structure of a solar cell according to another embodiment of the present application.

[0064] Figure 7 is a schematic diagram of a partial cross-sectional structure of a solar cell according to another embodiment of the present application. Figure 1 is a schematic diagram of a partial cross-sectional structure of a solar cell according to another embodiment of the present application.

[0065] Figure 8 is a schematic diagram of a partial cross-sectional structure of a solar cell according to another embodiment of the present application. Figure 1 is a schematic diagram of a partial cross-sectional structure of a solar cell according to another embodiment of the present application.

[0066] Figure 9 is a schematic diagram of a power consuming device using a solar cell according to an embodiment of the present application as a power source.

[0067] Explanation of Reference Numerals:

[0068] 1. Solar cell; 110, substrate; 120, first electrode layer; 130, light absorbing layer; 140, second electrode layer; 141, main conductive part; 142, connecting conductive part; 143, first layer sub-electrode layer; 144, second layer sub-electrode layer; 150, protective layer; 151, first protective layer; 152, second protective layer; 153, third protective layer; 154, fourth protective layer; 160, first transport layer; 170, second transport layer; P1, first groove; P2, second groove; P3, third groove; P12, first protective groove; P14, second protective groove;

[0069] 2. Electrical device. DETAILED DESCRIPTION

[0070] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0071] The "range" disclosed in the present application can be limited in the form of lower limit and upper limit, and a given range is limited by selecting a lower limit and an upper limit, and the selected lower limit and upper limit limit the boundary of the particular range. The range limited in this way can be inclusive or exclusive of the end values, either end value can be independently included or excluded, and can be arbitrarily combined, that is, any lower limit can be combined with any upper limit to form a range. For example, if the ranges of 60-120 and 80-110 are listed for a particular parameter, it is understood that the ranges of 60-110 and 80-120 are also anticipated. In addition, if the minimum range values 1 and 2 are listed, and if the maximum range values 3, 4 and 5 are also listed, the following ranges can all be anticipated: 1-3, 1-4, 1-5, 2-3, 2-4 and 2-5. In the present application, unless otherwise stated, the numerical range "a-b" represents a shorthand notation for any real combination of integers between a and b, where a and b are both real numbers. For example, the numerical range "0-5" means that all real numbers between "0-5" have been listed herein, and "0-5" is only a shorthand notation for these numerical combinations. In addition, when it is stated that a parameter is an integer ≥ 2, it is equivalent to disclose that the parameter is, for example, an integer 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc. For example, when it is stated that a parameter is an integer selected from "2-10", it is equivalent to list the integers 2, 3, 4, 5, 6, 7, 8, 9 and 10.

[0072] In the present application, "a plurality of", "a plurality of kinds", and the like, if not specifically limited, refer to more than two or equal to two in number. For example, "one or more" means one or more than two.

[0073] If not specifically stated, all embodiments and optional embodiments of the present application can be combined with each other to form new technical solutions.

[0074] In the present application, the phrase "embodiments" is mentioned, which means that the specific features, structures or properties described in connection with the embodiments can be included in at least one embodiment or embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is not mutually exclusive with other embodiments. Those skilled in the art understand explicitly and implicitly that the embodiments described herein can be combined with other embodiments. The phrase "embodiments" is mentioned in the present application.

[0075] Those skilled in the art can understand that in the method of each embodiment or embodiment, the writing order of each step does not mean a strict execution order and does not constitute any limitation on the implementation process. The detailed execution order of each step should be determined by its function and possible internal logic. If not specifically stated, all steps of the present application can be performed sequentially or randomly, preferably sequentially. For example, the method comprises steps (a) and (b), which means that the method can comprise sequentially performed steps (a) and (b), or sequentially performed steps (b) and (a). For example, the method can also comprise step (c), which means that step (c) can be added to the method in any order, for example, the method can comprise steps (a), (b) and (c), or steps (a), (c) and (b), or steps (c), (a) and (b), etc.

[0076] In the present application, the open technical features or technical solutions described by the words "contain", "include", "comprise" and the like, if not otherwise stated, do not exclude additional members from the listed members, which can be considered as providing both a closed feature or solution composed of the listed members, and an open feature or solution including additional members in addition to the listed members. For example, A includes a1, a2 and a3, if not otherwise stated, it can also include other members, or it can not include additional members, which can be considered as providing both the feature or solution that "A is composed of a1, a2 and a3", and the feature or solution that "A includes a1, a2 and a3, and also includes other members".

[0077] In the present application, A (such as B) means that B is a non-limiting example of A, and A can be understood as not limited to B, if not otherwise stated.

[0078] In the present application, "optionally", "optional" and "optional" mean optional, i.e. selected from "yes" or "no". If there are multiple "optional" in a technical solution, each "optional" is independent if there is no special description, no contradiction or mutual restriction.

[0079] As described in the background, the current solar cell has the problem of low stability of photoelectric performance. Based on this, the present application sets a protection groove to form a protection layer in the protection groove, protects the light-absorbing layer through the protection layer in the protection groove, and separates the light-absorbing layer and the electrode material, so as to inhibit the interaction between the light-absorbing layer and the air, water oxygen, and the interaction between the light-absorbing layer and the electrode material, thereby improving the performance stability of the light-absorbing layer and the electrode material. In addition, the present application also forms another protection layer connected with the protection layer in the protection groove in the electrode layer above the light-absorbing layer, improves the structural stability of the two protection layers, and at the same time, the other protection layer does not completely cover the light-absorbing layer and the electrode material is arranged below it, so that the setting of the protection layer basically does not affect the carrier transport of the electrode layer. In this way, the photoelectric conversion efficiency and performance stability of the solar cell can be improved.

[0080] Please refer to Figure 1 The first aspect of the present application provides a solar cell 1, comprising a first electrode layer 120, a light-absorbing layer 130 and a second electrode layer 140 arranged in layers. The solar cell further comprises a first protection layer 151 and a second protection layer 152.

[0081] The solar cell 1 is provided with a first groove P1, a second groove P2 and a third groove P3. The first groove P1 is arranged on the first electrode layer 120 and divides the first electrode layer 120 along the thickness direction Y of the solar cell 1. The second groove P2 divides the light-absorbing layer 130 and part of the second electrode layer 140 along the thickness direction Y of the solar cell 1 and exposes the first electrode layer 120. The third groove P3 divides the second electrode layer 140 along the thickness direction Y of the solar cell 1.

[0082] The second electrode layer 140 includes a main conductive part 141 arranged on the light-absorbing layer 130 away from the first electrode layer 120 and a connecting conductive part 142 arranged in the second groove P2, and the main conductive part 141 and the connecting conductive part 142 are connected, and the connecting conductive part 142 is connected with the first electrode layer 120. That is, the first electrode layer 120, the light-absorbing layer 130 and the main conductive part 141 of the second electrode layer 140 are arranged in layers, and the connecting conductive part 142 is connected with the first electrode layer 120 to realize the conduction between adjacent sub-cells.

[0083] The solar cell 1 is further provided with a first protection groove P12. The first protection groove P12 separates the light-absorbing layer 130 and part of the second electrode layer 140 along the thickness direction Y of the solar cell 1, and the second groove P2 is located between the first protection groove P12 and the third groove P3.

[0084] The first protection layer 151 fills in the first protection groove P12 and separates the light-absorbing layer 130 and the connecting conductive part 142 along the first direction X, the second protection layer 152 is at least wrapped by the main conductive part 141 along two sides in the thickness direction Y of the solar cell 1 and connected with the first protection layer 151, and the projection of the second protection layer 152 on the first electrode layer 120 along the thickness direction Y of the solar cell is smaller than the projection of the light-absorbing layer 130 on the first electrode layer 120 along the thickness direction Y of the solar cell. Wherein, the thickness direction Y and the first direction X intersect. Further, the thickness direction Y and the first direction X are perpendicular. Further, the projection of the main conductive part 141 on the first electrode layer 120 is greater than or equal to the projection of the light-absorbing layer 130 on the first electrode layer 120.

[0085] In other words, part of the main conductive part 141 is provided between the second protection layer 152 and the light-absorbing layer 130, which can transmit carriers from the light-absorbing layer 130, so that the setting of the second protection layer 152 basically does not affect the carrier transmission between the second electrode layer 140 and the light-absorbing layer 130, and has little effect on the overall resistance of the cell. Further, the second protection layer 152 is located in the main conductive part 141, that is, the second protection layer 152 is wrapped by the main conductive part 141 and the first protection layer 151.

[0086] The first protective layer 151 is arranged in the first protective groove P12 and separates the light-absorbing layer 130 and the connecting conductive part 142 in the first direction X, so as to prevent the connecting conductive part 142 in the second groove P2 from contacting the side surface of the light-absorbing layer 130. In this way, on one hand, the corrosion of the connecting conductive part 142 by halogen ions in the light-absorbing layer 130 such as the perovskite layer can be prevented, and on the other hand, the carrier recombination, ion migration, water and oxygen diffusion, and contact between the light-absorbing layer 130 and the air can be prevented, so as to reduce the risk of decomposition of the light-absorbing layer 130 such as the perovskite layer, and prolong the service life of the solar cell. In addition, the second protective layer 152 is wrapped on both sides by the main conductive part 141, and is connected with the first protective layer 151 and the projection of the second protective layer 152 on the first electrode layer 120 is smaller than the projection of the light-absorbing layer 130 on the first electrode layer 120. In this way, the main conductive part 141 below the second protective layer 152 can collect carriers, so that the setting of the second protective layer 152 does not expand the dead zone of the cell, and the setting of the second protective layer 152 basically does not affect the carrier transmission between the second electrode layer 140 and the light-absorbing layer 130, and has little effect on the overall resistance of the cell. At the same time, the first protective layer 151 is connected with the second protective layer 152 embedded in the inside of the main conductive part 141, so as to improve the structural stability of the first protective layer 151. Therefore, the solar cell described above can obtain good photoelectric conversion efficiency, and improve the stability of the cell device.

[0087] In some embodiments, the third groove P3 can only divide the second electrode layer 140 along the thickness direction Y of the solar cell 1, or divide both the second electrode layer 140 and the light-absorbing layer 130 along the thickness direction Y of the solar cell 1.

[0088] It can be understood that the first groove P1, the second groove P2 and the third groove P3 are etching regions arranged across layers, for dividing the film layer prepared in a large area into different components, so as to form a cell structure in which a plurality of sub-cells are connected in series. The first groove P1 divides the first electrode layer 120 of the adjacent two sub-cells to separate the first electrode layer 120 of the sub-cells. The connecting conductive part 142 is arranged in the second groove P2 and contacts the first electrode layer 120, so that the structural layer between the first electrode layer 120 of one sub-cell and the second electrode layer 140 of another sub-cell forms a path. The third groove P3 at least divides the second electrode layer 140 to prevent short circuit between the adjacent two sub-cells, so as to connect the plurality of perovskite sub-cells in series to form a solar cell.

[0089] The first trench P1, the second trench P2, and the third trench P3 can each be an independent linear etching region, also known as an etching line. The first trench P1, the second trench P2, and the third trench P3 can each be an independent laser etching region. The number of the first trench P1, the second trench P2, and the third trench P3 can each be one or more. In some embodiments, the number of the first trench P1, the second trench P2, and the third trench P3 is the same and they appear in groups to achieve series connection of multiple sub-cells. In some embodiments, the solar cell 1 is provided with a second protective trench P14, which divides the light-absorbing layer 130 and a portion of the second electrode layer 140 along the thickness direction Y of the solar cell 1. The second protective trench P14 and the first protective trench P12 are located on opposite sides of the second trench P2.

[0090] The solar cell also includes a third protective layer 153 and a fourth protective layer 154. The third protective layer 153 is disposed within the second protective trench P14 and separates the light-absorbing layer 130 and the connecting conductive portion 142 within the second trench P2 along the first direction. The fourth protective layer 154 is covered by the main conductive portion 141 and connected to the third protective layer 153, at least along the thickness direction Y of the solar cell, near the light-absorbing layer 130. The projection of the fourth protective layer 154 along the thickness direction Y of the solar cell onto the first electrode layer 120 is smaller than the projection of the light-absorbing layer 130 along the thickness direction Y of the solar cell onto the first electrode layer 120. Thus, the third protective layer 153 also prevents the light-absorbing layer 130 from contacting air and preventing water and oxygen from diffusing into the light-absorbing layer 130. The function of the fourth protective layer 154 is similar to that of the second protective layer 152. Thus, both sides of the light-absorbing layer 130 of each sub-cell formed by the trench division can be protected by the protective layers. Please continue reading. Figure 1 Furthermore, in this specific example, the third trench P3 is located between the second trench P2 and the second protective trench P14 along the first direction X, and divides the second electrode layer 140 and the light-absorbing layer 130 along the thickness direction Y of the solar cell. Furthermore, the third trench P3 separates the conductive portion 142 and the third protective layer 153 along the first direction X.

[0091] Please see Figure 2 ,exist Figure 2 In the specific example shown, the third trench P3 divides the main conductive portion 141 located on the fourth protective layer 154 along the thickness direction Y of the solar cell to achieve the division of the second electrode layer 140.

[0092] It is worth noting that the widths of the second protective layer 152 and the fourth protective layer 154 in the first direction X are greater than 0 and less than the width of the light-absorbing layer 130. The first direction X intersects the thickness direction Y of the solar cell. Optionally, the first direction X is perpendicular to the thickness direction of the solar cell to facilitate the fabrication of the solar cell.

[0093] The width of the second protective layer 152 and the fourth protective layer 154 is greater than 0, which can be connected with the first protective layer 151 and the third protective layer 153 to improve the structural stability of the first protective layer 151 and the second protective layer 152. On the other hand, considering the preparation process of the protective layer, the width of the first protective layer 151 and the second protective layer 152 should be as small as possible to reduce the dead zone. However, the smaller the width of the first protective layer 151 and the second protective layer 152, the higher the alignment requirement of the first protective groove P12 and the second protective groove P14 in the process. Therefore, the present application can use a method including a mask to simultaneously deposit a protective layer on the first protective groove P12 and the part of the main body conductive part 141 above the two sides of the first protective groove P12. For example, the method of the mask, that is, a hollow area on the mask corresponds to the first protective groove P12 and the part of the main body conductive part 141 above the two sides of the first protective groove P12, which reduces the alignment requirement in the process and improves the process operability.

[0094] Further, when the first protective groove P12 and the second protective groove P14 are contained at the same time, a method including a mask can be used to simultaneously deposit a protective layer on the first protective groove P12, the second protective groove P14, the area between the first protective groove P12 and the second protective groove P14, and the part of the main body conductive part 141 above the first protective groove P12 and the second protective groove P14. For example, the method of the mask, that is, a hollow area on the mask corresponds to the first protective groove P12, the second protective groove P14, and the part of the main body conductive part 141 above the first protective groove P12 and the second protective groove P14. The area of the hollow area or the deposition is increased, which reduces the mask alignment and deposition difficulty and simplifies the preparation process.

[0095] The second protective layer 152 and the fourth protective layer 154 are arranged in the main body conductive part 141 of the second battery, and part of the main body conductive part 141 is separated from the lower light-absorbing layer 130 by the second protective layer 152 and the fourth protective layer 154, so that the second protective layer 152 and the fourth protective layer 154 are not in direct contact with the light-absorbing layer, and the projection of the fourth protective layer 154 on the first electrode layer 120 is smaller than the projection of the light-absorbing layer 130 on the first electrode layer 120, while the main body conductive part 141 on the upper and lower surfaces of the second protective layer 152 can also realize mutual contact, so that the second protective layer 152 and the fourth protective layer 154 basically do not affect the carrier transport between the second electrode layer 140 and the light-absorbing layer 130, and have little effect on the overall resistance of the battery, so the material selection range of the second protective layer 152 and the fourth protective layer 154 is very large, including but not limited to insulating materials; The first protective layer 151 and the third protective layer 153 arranged in the protective groove do not need to consider the carrier transport performance, and the selection range is very large, including but not limited to insulating materials. Therefore, in some embodiments, the material of each protective layer independently includes at least one of a conductive material and an insulating material. That is, the materials of the first protective layer 151, the second protective layer 152, the third protective layer 153 and the fourth protective layer 154 described above can be the same or different, and each material includes at least one of a conductive material and an insulating material. Further, the conductivity of the conductive material is less than the conductivity of the second electrode layer 140.

[0096] In particular, in order to provide better insulation protection, the material of the first protective layer 151 and the third protective layer 153 includes an insulating material.

[0097] Further, the insulating material described above includes at least one of an inorganic insulating material and an organic insulating material. Further, the inorganic insulating material includes at least one of a metal oxide and a non-metal oxide.

[0098] As an example of the inorganic insulating material, the metal oxide includes but is not limited to at least one of aluminum oxide, cerium oxide, zirconium oxide, and titanium oxide.

[0099] As an example of the inorganic insulating material, the non-metal oxide includes but is not limited to silicon dioxide.

[0100] Further, the conductive material described above includes but is not limited to at least one of a metal conductive material and a metal oxide conductive material.

[0101] As an example, the metal conductive material can include but is not limited to Cr.

[0102] As an example, the metal oxide conductive material includes, but is not limited to, at least one of tin oxide, indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), antimony-doped tin oxide (ATO), boron-doped zinc oxide (BZO), gallium-doped indium oxide (IGO). For example, when the second electrode layer 140 is a metal electrode layer, the material of the protective layer can be a metal oxide conductive material.

[0103] In some embodiments, the material of the first protective layer 151, the second protective layer 152, the third protective layer 153, and the fourth protective layer 154 each independently includes one or more of aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, tin oxide, FTO, ITO, AZO, ATO, IGO, BZO, and Cr.

[0104] In some embodiments, the span of the second protective layer 152 and the fourth protective layer 154 in the first direction X is denoted as W1 (i.e. Figure 7 the width W1 of the protective layer 150 shown). The span W1 refers to the distance between the two most distant ends of the adjacent second protective layer 152 and the fourth protective layer 154 in the first direction X; in an implementation process, the adjacent second protective layer 152 and the fourth protective layer 154 are simultaneously deposited to form a continuous whole in one process, and then separated into the second protective layer 152 and the fourth protective layer 154 by a process.

[0105] Please continue to refer to Figure 1 In some embodiments, the width of the second protective layer 152 and the fourth protective layer 154 in the first direction X is denoted as L1 and L2, respectively, and the spacing between the second protective layer 152 and the fourth protective layer 154 in the first direction X is denoted as L3, W1=L1+L2+L3. The spacing L3 refers to the distance between the two closest ends of the adjacent second protective layer 152 and the fourth protective layer 154.

[0106] The width of the sub-cell divided from the solar cell in the first direction is W2. Further, W1 / W2≤80%, as an example, W1 / W2 can be 1%, 2%, 2.5%, 3.3%, 3.5%, 4%, 5%, 8%, 10%, 11%, 11.5%, 12%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 60%, 70%, 80%, or a range formed by any two of the above values. By controlling the width ratio W1 / W2 in this way, the overall resistance of the protective layer to the cell can be reduced as much as possible, and the stability of the protective layer is also considered, so that the cell can obtain better photoelectric conversion efficiency.

[0107] Optionally, W1 / W2 is 2.5% to 50%. Further, W1 / W2 can be 5% to 40%. Still further, W1 / W2 can be 5% to 15%.

[0108] Further, W1 = 150 μm to 3000 μm. As an example, W1 can be 150 μm, 180 μm, 200 μm, 300 μm, 400 μm, 500 μm, 600 μm, 700 μm, 800 μm, 900 μm, 1000 μm, 1500 μm, 2000 μm, 2500 μm, 3000 μm, or a range defined by any two of the above values as endpoints. Further, W1 = 150 μm to 700 μm, optionally 150 μm to 500 μm, and still further 200 μm to 350 μm.

[0109] Further, W2 = 5000 μm to 8000 μm. As an example, W2 can be 5000 μm, 5500 μm, 6000 μm, 6500 μm, 7000 μm, 7500 μm, 8000 μm, or a range defined by any two of the above values as endpoints.

[0110] Further, the width L1, L2 of the second protective layer 152 and the fourth protective layer 154 in the first direction X can be the same or different. In one specific example, L1 = L2. L1 and L2 can range from 20 μm to 1450 μm, and as an example, can be 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, 60 μm, 80 μm, 90 μm, 95 μm, 100 μm, 150 μm, 195 μm, 200 μm, 250 μm, 295 μm, 300 μm, 400 μm, 500 μm, 600 μm, 800 μm, 1000 μm, 1100 μm, 1200 μm, 1300 μm, 1400 μm, 14450 μm, 1450 μm, or a range defined by any two of the above values as endpoints. Further, L1 and L2 can range from 20 μm to 300 μm, or 40 μm to 300 μm.

[0111] In some embodiments, the thickness of the second protective layer 152 and the fourth protective layer 154 (i.e., T1, T2) can be the same or different. In one specific example, T1 = T2. T1 and T2 can range from 0.1 μm to 1000 μm, and as an example, can be 0.1 μm, 0.5 μm, 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 75 μm, 80 μm, 85 μm, 90 μm, 95 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, 450 μm, 500 μm, 550 μm, 600 μm, 650 μm, 700 μm, 750 μm, 800 μm, 850 μm, 900 μm, 950 μm, 1000 μm, or a range defined by any two of the above values as endpoints. Further, T1 and T2 can range from 0.1 μm to 500 μm, or 0.1 μm to 300 μm. Figure 6The width H of the protective layer 150 is 5 nm to 200 nm, and can be 10 nm to 80 nm. It can be understood that the thickness of the second protective layer 152 and the fourth protective layer 154 can be the same or different, and as an example, the thickness of each of them can be 5 nm, 10 nm, 15 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 120 nm, 150 nm, 160 nm, 180 nm, 200 nm.

[0112] In some embodiments, the width of the first protective layer 151 and the third protective layer 153 in the first direction X is 15 μm to 100 μm. That is, the width of the first protective groove P12 and the second protective groove P14 is 15 μm to 100 μm. It can be understood that the width of the first protective layer 151 and the third protective layer 153 can be the same or different, and as an example, the width can be 15 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, or a range formed by any two of the above values as end values.

[0113] In some embodiments, the second protective groove P14 is arranged to expose the first electrode layer 120, and the third protective layer 153 is arranged on the first electrode layer 120 in the second protective groove P14.

[0114] Referring to Figure 1 and Figure 3 In some embodiments, the position of the first groove P1 and the first protective groove P12 are staggered along the first direction X. That is, the projection of the first protective groove P12 on the first electrode layer 120 along the thickness direction Y of the solar cell 1 is staggered with the projection of the first groove P1 on the first electrode layer 120 along the thickness direction Y of the solar cell 1, and the first groove P1 and the first protective groove P12 are not connected.

[0115] Referring to Figure 1 Further, when the position of the first groove P1 and the first protective groove P12 are staggered, the first protective groove P12 is arranged to expose the first electrode layer 120, and the first protective layer 151 is arranged on the first electrode layer 120 in the first protective groove P12. In this way, the first protective layer 151 and the third protective layer 153 are arranged in the same layer, which can facilitate the synchronous opening of the first protective groove P12 and the second protective groove P14 by laser and the like.

[0116] Alternatively, referring to Figure 3Further, when the first trench P1 and the first protection trench P12 are staggered with each other, the first protection trench P12 divides part or all of the first electrode layer 120, the first protection layer 151 is embedded in the first electrode layer 120, and the first protection layer 151 can not penetrate the first electrode layer 120 or penetrate the first electrode layer 120. In this way, the first protection layer 151 is embedded in part or all of the first electrode layer 120, which can more comprehensively isolate and protect the light-absorbing layer 130, and can also improve the structural stability of the first protection layer 151.

[0117] Please refer to Figure 4 In some other embodiments, the first trench P1 and the first protection trench P12 are in communication with each other, the first protection layer 151 is further embedded in the first trench P1 and penetrates the first electrode layer 120 along the thickness direction Y of the solar cell 1 to divide the first electrode layer 120, and the material of the first protection layer 151 is an insulating material. In other words, the projection of the first protection trench P12 on the first electrode layer 120 is partially or entirely located in the first trench P1. Further, the projection of the first protection trench P12 on the first electrode layer 120 overlaps the first trench P1. Further, the first protection layer 151 is an insulating material layer.

[0118] In this way, the first trench P1 and the first protection trench P12 can be formed in two steps or in one step, and the first protection layer 151 can be filled in the first trench P1 and the first protection trench P12 in one process, which greatly simplifies the process. The first protection layer 151 can more comprehensively isolate and protect the light-absorbing layer 130, and can also improve the structural stability of the first protection layer 151.

[0119] Please continue to refer to Figure 1 In some embodiments, along the thickness direction Y of the solar cell 1, the main body conductive part 141 includes a first layer of sub-electrode layer 143 and a second layer of sub-electrode layer 144 stacked, the first layer of sub-electrode layer 143 is located between the light-absorbing layer 130 and the second layer of sub-electrode layer 144 along the thickness direction Y of the solar cell 1, and the second protection layer 152 and / or the fourth protection layer 154 are located on the first layer of sub-electrode layer 143 along the thickness direction Y of the solar cell 1 and are partially covered by the second layer of sub-electrode layer 144.

[0120] It should be noted that the material of the first sub-electrode layer 143 and the second sub-electrode layer 144 can be the same or different; in the case where the material of the first sub-electrode layer 143 and the second sub-electrode layer 144 is the same, the first sub-electrode layer 143 and the second sub-electrode layer 144 can form two layers without an obvious interface, and the two layers form a uniform whole second electrode layer 140. In another embodiment, in the case where the material of the first sub-electrode layer 143 and the second sub-electrode layer 144 is the same, the first sub-electrode layer 143 and the second sub-electrode layer 144 form two layers with an obvious interface.

[0121] In some embodiments, the above-mentioned solar cell further comprises a substrate 110, and the first electrode layer 120, the light-absorbing layer 130, and the second electrode layer 140 are sequentially stacked on the substrate 110.

[0122] Further, the substrate 110 is a transparent substrate, which comprises one of a glass substrate or an organic polymer film, wherein the organic polymer film comprises one of polyethylene terephthalate (PET) and polyethylene naphthalate (PEN). The substrate 110 can be used as the incident side of sunlight.

[0123] In some embodiments, the above-mentioned solar cell 1 further comprises an encapsulation layer (not shown in the figure), which is arranged on the second electrode layer 140 and sealed between the substrate 110. The encapsulation layer is also called a cover plate. Further, the material of the encapsulation layer can be tempered glass or other glass.

[0124] Further, a buffer adhesive layer is further included between the encapsulation layer and the second electrode layer 140. The buffer adhesive layer can be formed by softening and casting the original film of the buffer adhesive layer under lamination conditions. The buffer adhesive layer can buffer the stress received by the light-absorbing layer 130 such as the perovskite layer, and also has a certain sealing effect on the solar cell. The buffer adhesive layer comprises at least one of polyolefin elastomer (POE), ethylene-vinyl acetate copolymer (EVA), thermoplastic polyurethane elastomer (TPU), and polyvinyl butyral (PVB).

[0125] Referring to Figures 1 to 4 The above-mentioned solar cell 1 further comprises at least one of a first transport layer 160 and a second transport layer 170. The first transport layer 160 is arranged between the first electrode layer 120 and the light-absorbing layer 130; further, the second transport layer 170 is arranged between the second electrode layer 140 and the light-absorbing layer 130. One of the first transport layer 160 and the second transport layer 170 is an electron transport layer, and the other is a hole transport layer.

[0126] Referring to Figure 1As an example, in one specific example, the first trench P1 penetrates the first electrode layer 120 and divides the first electrode layer 120; the material within the first trench P1 is consistent with the first transport layer 160. See also... Figure 4 In another specific example, the material within the first trench P1 can also be the same as the first protective layer 151. See also... Figure 1 As an example, the first protective trench P12 and the second protective trench P14 penetrate the second electrode layer 140 (i.e., the first sub-electrode layer 143), the second transmission layer 170, the light-absorbing layer 130, and the first transmission layer 160; the first protective trench P12 and the second protective trench P14 are spaced apart, with the first protective trench P12 located between the second protective trench P14 and the first trench P1. Please refer to [link / reference]. Figure 3 ,and Figure 1 The difference lies in the second electrode layer 140 (i.e., the first sub-electrode layer 143), the second transmission layer 170, the light-absorbing layer 130, the first transmission layer 160, and the first electrode layer 120 of the first protective groove P12 penetrating portion.

[0127] Please see Figure 1 As an example, the second trench P2 penetrates the protective layer, part of the second electrode layer 140 (i.e., the first sub-electrode layer 143), the second transport layer 170, the light-absorbing layer 130 and the first transport layer 160. The material of the second trench P2 is the same as the material of the second electrode layer 140 to connect the first electrode layer 120 and the second electrode layer 140 of the adjacent sub-cell.

[0128] Please see Figure 1 The third trench P3 penetrates the second electrode layer (i.e., the second sub-electrode layer 144), the protective layer, a portion of the second electrode layer 140 (i.e., the first sub-electrode layer 143), the second transport layer 170, the light-absorbing layer 130, and the first transport layer 160, with adjacent second electrode layers 140 spaced apart. The third trench P3 may or may not be filled with material, as those skilled in the art can choose according to actual needs. As an example, a PbSO4 protective layer can be filled outside the perovskite layer within the third trench P3 to protect the exposed light-absorbing layer 130, isolate it from water and oxygen, and improve the stability of the solar cell 1.

[0129] In some embodiments, the width of the first groove P1 is 10μm to 50μm, for example 10μm, 20μm, 30μm, 40μm, 50μm.

[0130] In some embodiments, the width of the second trench P2 is 10 μm to 200 μm, for example, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 100 μm, 150 μm, 180 μm, 200 μm. Further, the spacing between the second trench P2 and the first trench P1 can be 20 μm to 80 μm, for example, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm.

[0131] In some embodiments, the width of the third trench P3 is 10 μm to 50 μm, for example, 10 μm, 15 μm, 20 μm, 30 μm, 40 μm, 50 μm. Further, the spacing between the third trench P3 and the second trench P2 can be 20 μm to 40 μm, for example, 20 μm, 30 μm, 40 μm.

[0132] The material of the electron transport layer includes, but is not limited to, one or more of intrinsic n-type semiconductor, modified n-type semiconductor, [6,6]-phenyl C61 butyric acid methyl ester (PC61BM), [6,6]-phenyl C71 butyric acid methyl ester (PC71BM), fullerene and its derivatives. Among them, the intrinsic n-type semiconductor includes one or more of tin oxide, titanium oxide, zinc oxide; the modified n-type semiconductor includes an intrinsic semiconductor doped with at least one of bismuth, aluminum, manganese, magnesium, chlorine, for example, one or more of tin oxide, titanium oxide and zinc oxide. The preparation method of the electron transport layer includes one or more of spin coating method, screen printing method, vacuum evaporation coating method, physical vapor deposition method (PVD), chemical vapor deposition method (CVD), active plasma deposition method (RPD). In order to further reduce the interface non-radiative recombination, the electron transport layer can have an interface modification layer, including one or more of alkali metal halide, organic amine halide, inorganic metal oxide. The structure of the electron transport layer includes one of single layer, double layer, multi-layer.

[0133] The material of the hole transport layer includes, but is not limited to, one or more of CuSCN, Cul, CuS, CuGaO2, MoS2, molybdenum oxide, copper phthalocyanine, copper-nickel composite oxide, nickel oxide, WO3, alumina oxide, a polymer of 3-hexylthiophene, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], polycarbazole-thiophene-benzothiadiazole-thiophene, 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-OMeTAD), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], Me-2PACz ([2-(3,6-diphenyl-9H-carbazol-9-yl)ethyl]phosphonic acid). The preparation method of the hole transport layer includes one or more of spin coating, screen printing, physical vapor deposition (PVD), reactive plasma deposition (RPD), doctor blading, slot die.

[0134] Further, the thickness of the hole transport layer can be 10 nm to 50 nm, and as an example, the thickness can be 10 nm, 20 nm, 30 nm, 40 nm, or 50 nm.

[0135] The light absorption layer 130 can be, but is not limited to, a perovskite light absorption layer. For example, the light absorption layer 130 can also include at least one of a dye-sensitized light absorption layer, a thin-film silicon light absorption layer, and an organic light absorption layer. The light absorption layer 130 can generate hole-electron pairs by absorbing light and being excited by photons, and the holes and electrons are separated under the action of an electric field, and then transmitted to the first electrode layer 120 and the second electrode layer 140, respectively, and then guided to an external circuit through a busbar to form a loop, which can be used to drive a load to work.

[0136] Taking the perovskite light absorption layer as an example, the preparation method of the perovskite light absorption layer can be a commonly used preparation method in the art, including but not limited to one or more of spin coating, doctor blading, slot die, vacuum deposition, inkjet printing. In order to further reduce the interface non-radiative recombination, the perovskite light absorption layer can have an interface modification layer, including one or more of organic amine halide, organic thiocyanate, Lewis acid, Lewis base.

[0137] Further, the crystal structure of the perovskite light absorption layer is ABX3 or A2CDX6. Among them, A ion is a monovalent cation, B ion is a divalent metal cation, C ion is a monovalent metal cation, D ion is a trivalent metal cation, and X ion is a monovalent anion.

[0138] Optionally, the A ion is a monovalent cation having a larger radius, including at least one of an organic cation and a metal cation. More optionally, the organic cation includes at least one of an organic amine ion, formamidinium (HC(NH2)2 + , FA + ), and imidazolium; and more optionally, the metal cation includes at least one of Li + , a sodium ion (Na + ), a potassium ion (K + ), a rubidium ion (Rb + ), and a cesium ion (Cs + ). Further, the organic amine ion includes at least one of a methylamine ion (CH3NH3 + , MA + ), a dimethylammonium ion (MDA 2+ ), a phenethylammonium ion (PEA + ), an oleyl ammonium ion (OA + ), an ethylamine ion, a propylamine ion, a butylamine ion, a pentylamine ion, and a hexylamine ion.

[0139] Optionally, the B ion includes at least one of Pb 2+ , Sn 2+ , Be 2+ , Mg 2+ , Ca 2+ , Sr 2+ , Ba 2+ , Zn 2+ , Ge 2+ , Fe 2+ , Co 2+ , Cu 2+ , and Ni 2+ ; and more optionally, the B ion includes one or both of Pb 2+ and Sn 2+ .

[0140] Optionally, the C ion includes at least one of Cs + , Ag + , K + , and Ru + .

[0141] Optionally, the D ion includes at least one of Bi 3+ , Ni 3+ , Fe 3+ , and Cu 3+ ;

[0142] Optionally, the X ion includes a fluoride ion (F - ), a chloride ion (Cl - ), a bromide ion (Br - ), and an iodide ion (I -) and thiocyanate ion (SCN - ) and I - . - . - .

[0143] It is understood that the perovskite material in the perovskite light-absorbing layer can be selected from at least one of Cs x1 FA 1-x1 PbX3, Cs x1 MA 1-x1 PbX3, Cs m FA n MA 1-m-n PbX3, CsPbX3, MAPbX3, FAPbX3, CsFAPbSnX3, Cs x1 FA 1-x1 Pb x2 Sn 1-x2 X3, Cs m FA n MA 1-m- n Pb x2 Sn 1-x2 X3, Cs Pb x2 Sn 1-x2 X3, MAPb x2 Sn 1-x2 X3and FAPb x2 Sn 1-x2 X3, wherein 0

[0144] Further, as an example, the perovskite material in the perovskite light-absorbing layer 130 can be selected from at least one of Cs 0.5 FA 0.5 PbI3, CsPbI3, FAPbI3.

[0145] In some examples, the method for preparing the perovskite light-absorbing layer includes the following steps: mixing the A-containing material, BX2and a solvent to prepare a perovskite precursor solution; and coating the perovskite precursor solution on a corresponding substrate and annealing to obtain the perovskite light-absorbing layer.

[0146] The first electrode layer 120 includes at least one of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO) and other conductive metal oxides. Further, the resistivity of the first electrode layer 120 is 4-30 Ωcm.

[0147] Further, in order to enable the light to be effectively transmitted to the light-absorbing layer 130, the first electrode layer 120 in the solar cell 1 is configured as a transparent electrode layer, and the second electrode layer 140 is configured as a back electrode layer. Further, the first electrode layer 120 and the substrate 110 form a transparent conductive glass, such as ITO glass, FTO glass, AZO glass, GZO glass.

[0148] The material of the second electrode layer 140 (i.e. the material of the back electrode layer) includes one or more of a metal material, a carbon material, and a conductive metal oxide. The metal material includes one or more of gold, silver, titanium, copper, and aluminum; the carbon material includes one or more of carbon quantum dots, graphene, carbon nanotubes, carbon nanosheets, carbon fibers, and carbon black; and the conductive metal oxide includes one or more of ITO, AZO, indium-doped tungsten oxide (IWO), and cerium-doped indium oxide (ICO). In addition, the second electrode layer 140 can also be a multi-layer or mixed back electrode layer formed by combining the above three types of materials. The preparation method of the second electrode layer 140 includes one of thermal evaporation, electron beam evaporation (EBD), sputtering, hot-wire chemical vapor deposition (HWCVD), atomic layer deposition (ALD), physical vapor deposition (PVD), reactive plasma deposition (RPD), doctor blading, and slot die.

[0149] It can be understood that the solar cell includes a formal structure and a reverse structure in terms of structure.

[0150] For the formal structure, as a non-limiting example, the solar cell 1 includes the substrate 110 and the first electrode layer 120, the first transport layer 160 (electron transport layer), the light-absorbing layer 130, the second transport layer 170 (hole transport layer), and the second electrode layer 140 which are sequentially stacked on the substrate 110. The first electrode layer 120 is a transparent electrode layer, and the second electrode layer 140 is a back electrode layer.

[0151] For the reverse structure, as a non-limiting example, the solar cell 1 includes the substrate 110 and the first electrode layer 120, the first transport layer 160 (hole transport layer), the light-absorbing layer 130, the second transport layer 170 (electron transport layer), and the second electrode layer 140 which are sequentially stacked on the substrate 110. The first electrode layer 120 is a transparent electrode layer, and the second electrode layer 140 is a back electrode layer.

[0152] Optionally, the above-mentioned solar cell can further have an electron blocking layer between the electrode layer and the hole transport layer. The material of the electron blocking layer can be a known material.

[0153] Optionally, the solar cell described above can further comprise a hole blocking layer between the electrode layer and the electron transport layer. The material of the hole blocking layer can include, but is not limited to, BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) and tin oxide.

[0154] It can be understood that the interface between the adjacent film layers of the solar cell described above can or can not employ an interface layer according to the actual design.

[0155] It can be understood that the solar cell described above can be prepared by sequentially forming the stacked film layers on the substrate.

[0156] In some embodiments, the solar cell 1 further comprises an internal busbar for leading out the current of the solar cell 1 and connecting the positive electrode and the negative electrode of the solar cell 1.

[0157] In some embodiments, the solar cell 1 further comprises an external busbar (not shown in the figure) connected to the internal busbar and a junction box (not shown in the figure) connected to the external busbar, for leading out the current of the solar cell 1 to the outside of the photovoltaic module. The provision of the junction box and the external busbar helps to lead out the current of the solar cell 1 to the outside of the photovoltaic module, which can be used to drive a load or store electrical energy.

[0158] Please refer to Figures 5 to 8 and Figure 1 , the second aspect of the present application further provides a preparation method of the solar cell described above, comprising the following steps S11~S16.

[0159] S11, a first groove P1 for dividing the first electrode layer 120 is provided on the first electrode layer 120, please refer to Figure 5 .

[0160] S12, the light-absorbing layer 130 and the first layer of sub-electrode layer 143 are sequentially provided on the first electrode layer 120 provided with the first groove P1, and the first protection groove P12 is provided on the light-absorbing layer 130 and the first layer of sub-electrode layer 143, please refer to Figure 5 .

[0161] S13, the protection layer 150 is formed in the first protection groove P12 and on part of the area of the first layer of sub-electrode layer 143 by using a mask, please refer to Figure 6 .

[0162] S14, a second groove P2 is provided on the obtained cell structure, which divides the protection layer 150, the first layer of sub-electrode layer 143 and the light-absorbing layer 130 on the first layer of sub-electrode layer 143. Thus, the protection layer formed in the first protection groove P12 is the first protection layer 151, and the remaining protection layer on the first layer of sub-electrode layer 143 is the second protection layer 152, please refer to Figure 7 .

[0163] S15, forming a second layer of sub-electrode layer 144 on the obtained battery structure and in the second groove P2, please refer to Figure 8 . Thus the first layer of sub-electrode layer 143 and the second layer of sub-electrode layer 144 on the first layer of sub-electrode layer 143 constitute the main body conductive part 141, and the second layer of sub-electrode layer 144 in the second groove P2 constitutes the connecting conductive part 142.

[0164] S16, setting a third groove P3 on the second electrode layer 140 formed by the first layer of sub-electrode layer 143 and the second layer of sub-electrode layer 144, and the third groove P3 divides the second electrode layer 140.

[0165] The above preparation method can form a protective layer in one process, simplifying the process, and in addition, the solar cell prepared by the above preparation method has the above-mentioned advantage of excellent device stability. The above preparation method can use a mask to form a protective layer, which can avoid damage to the functional layer of the battery compared to etching and other methods.

[0166] It should be noted that the material of the first layer of sub-electrode layer 143 and the second layer of sub-electrode layer 144 can be the same or different; when the material of the first layer of sub-electrode layer 143 and the second layer of sub-electrode layer 144 is the same, there is no obvious interface between the first layer of sub-electrode layer 143 and the second layer of sub-electrode layer 144, and the two form a uniform second electrode layer 140. In another embodiment, when the material of the first layer of sub-electrode layer 143 and the second layer of sub-electrode layer 144 is the same, two layers with obvious interface are formed between the first layer of sub-electrode layer 143 and the second layer of sub-electrode layer 144.

[0167] The above preparation method is applicable to the preparation of structures in which the positions of the first groove P1 and the first protective groove P12 are staggered or not staggered, for example Figure 1 and Figure 3 .

[0168] Please refer to Figure 4 , in some embodiments, for the preparation method of the solar cell structure in which the positions of the first groove P1 and the first protective groove P12 are not staggered, that is, the first groove P1 and the first protective groove P12 are in communication with each other, the following steps S21-S25 can also be used.

[0169] S21, sequentially setting the light-absorbing layer 130 and the first layer of sub-electrode layer 143 on the first electrode layer 120, setting the first protective groove P12 on the light-absorbing layer 130 and the first layer of sub-electrode layer 143, and setting the first groove P1 on the first electrode layer 120 below the first protective groove P12.

[0170] Different from the steps S11~S16, the preparation method does not need to set the first trench P1 on the first electrode layer 120 before setting the light-absorbing layer 130 and the first layer sub-electrode layer 143. Further, the first trench P1 can be formed in one process with the first protective trench P12.

[0171] S22, using a mask to form a protective layer 150 on the first trench P1, the first protective trench P12 and the part of the first layer sub-electrode layer 143.

[0172] S23, setting a second trench P2 on the obtained battery structure, the second trench P2 divides the protective layer, the first layer sub-electrode layer and the light-absorbing layer 130 on the first layer sub-electrode layer 143. Thus, the protective layer formed in the first protective trench P12 is the first protective layer 151, and the remaining protective layer on the first layer sub-electrode layer is the second protective layer 152.

[0173] S24, forming a second layer sub-electrode layer 144 on the obtained battery structure and in the second trench P2.

[0174] S25, setting a third trench P3 on the second electrode layer 140 composed of the first layer sub-electrode layer 143 and the second layer sub-electrode layer 144, the third trench P3 divides the second electrode layer 140.

[0175] Thus, the first trench P1 and the first protective trench P12 are formed in one process through step S21, and the protective layer is further formed in one step, which further simplifies the process, and the first protective layer 151 is embedded in the first electrode layer 120, which can more comprehensively protect the light-absorbing layer 130 and improve the structural stability of the first protective layer 151.

[0176] In some embodiments, when the second protective trench P14 is provided, the following step S122 can be performed before the protective layer 150 is formed using a mask: setting the second protective trench P14 on the light-absorbing layer 130 and the first layer sub-electrode layer 143, the second protective trench P14 is spaced apart from the first protective trench P12; accordingly, using a mask to expose the second protective trench P14, the first protective trench P12, the region between the two protective trenches and the part of the first layer sub-electrode layer 143 adjacent to the protective trenches to form a protective layer 150 in the exposed region; the second trench P2 is located between the second protective trench P14 and the first protective trench P12.

[0177] It can be understood that the first protective trench P12 and the second protective trench P14 can be formed in one process or sequentially formed in two processes, and the order of formation is not limited.

[0178] The above preparation method and the structural features of the solar cell have been described above, and will not be described in detail here.

[0179] The solar cell can be prepared according to the above preparation method, and the specific implementation mode is not limited. According to different film layers, for example, a spraying method, a sputtering method, a vapor deposition method and the like are selectively used, and means that can be implemented by a person skilled in the art can be used.

[0180] Further, the vapor deposition method includes at least one of a chemical vapor deposition method, a physical vapor deposition method and a plasma vapor deposition method. Further, the chemical vapor deposition method is a method of generating a thin film on a surface of the substrate 110 by using one or more gaseous compounds or elements containing elements of the thin film to perform a chemical reaction, and includes a thermal CVD, a plasma chemical vapor deposition (PCVD) and a laser CVD (LCVD) and the like. The physical vapor deposition refers to a technology of depositing a thin film having a certain special function on a substrate surface by using a physical method to vaporize a material source (solid or liquid) surface into gaseous atoms or molecules or partially ionize into ions under a vacuum condition, and through a low-pressure gas (or plasma) process, and includes vacuum evaporation, sputtering film coating, arc plasma film coating, ion film coating and molecular beam epitaxy and the like.

[0181] The application further provides a photovoltaic module including the solar cell.

[0182] The solar cell has high light conversion efficiency and good stability, and can improve the efficiency of the photovoltaic module.

[0183] The photovoltaic module includes one or more solar cells, which can be selected according to specific application scenarios. Further, the photovoltaic module includes a plurality of solar cells, and the plurality of solar cells are connected in series or in parallel to form a cell piece. Further, the photovoltaic module can further include a stacked cell including one or more solar cells. The stacked cell includes but is not limited to a crystalline silicon / perovskite stacked cell, a full perovskite stacked cell, a copper indium gallium selenide thin film cell / perovskite stacked cell and the like.

[0184] In some embodiments, the photovoltaic module further includes a photovoltaic glass layer, an adhesive layer and a back plate.

[0185] The two surfaces of the cell piece are respectively provided with the adhesive layers, the surface away from the cell piece in one of the adhesive layers is provided with the back plate, and the surface away from the cell piece in the other adhesive layer is provided with the photovoltaic glass layer.

[0186] The photovoltaic glass layer and the back plate are used to protect the solar cell, and have the functions of sealing, insulation and waterproofing; the adhesive layers play the roles of bonding the photovoltaic glass layer and the cell piece and bonding the back plate and the cell piece.

[0187] Optionally, the material of the photovoltaic glass layer is tempered glass, the material of the back plate is TPT (polyvinyl fluoride) or TPE (thermoplastic elastomer), and the material of the bonding layer is EVA (polyethylene-polyvinyl acetate copolymer).

[0188] Further, the photovoltaic module further comprises a junction box and an outer frame. Further, the outgoing end of the busbar of the solar cell is connected with the junction box.

[0189] The junction box is used to protect the power generation system of the entire photovoltaic module, and it is equivalent to a current transfer station. When a short circuit occurs in a battery piece, the junction box will automatically disconnect the short-circuited battery string.

[0190] The outer frame can support and protect the entire photovoltaic module. The frame can be made of aluminum alloy, which has excellent strength and corrosion resistance.

[0191] Further, the connection between the frame and other parts of the photovoltaic module is bonded and sealed by silicone. The photovoltaic module can convert solar energy into electrical energy, which can be stored in a storage battery or used to drive a load.

[0192] In some embodiments, the photovoltaic module is a solar cell panel.

[0193] An embodiment of the present application also provides a photovoltaic system comprising the photovoltaic module.

[0194] The photovoltaic system uses the photovoltaic effect of the solar cell in the photovoltaic module to directly convert solar radiation energy into electrical energy, which has high efficiency. Further, the photovoltaic system is a photovoltaic power generation system.

[0195] The photovoltaic module is the core part of the photovoltaic power generation system. In the photovoltaic system, one or more photovoltaic modules are included, which can be selected according to the specific application scenario. Further, when multiple photovoltaic modules are included in the photovoltaic system, the multiple photovoltaic modules form a photovoltaic array.

[0196] The photovoltaic system can be an independent photovoltaic power generation system or a grid-connected photovoltaic power generation system.

[0197] The independent photovoltaic power generation system includes a photovoltaic array, a battery pack, a charge controller, a power electronic converter (inverter), a load, etc. Its working principle is that solar radiation energy is first converted into electrical energy by the photovoltaic array, and then the electrical energy is converted by the power electronic converter to supply power to the load. At the same time, the excess electrical energy is stored in the energy storage device in the form of chemical energy through the charge controller. In this way, when the sunlight is insufficient, the energy stored in the battery can be converted into AC 220V, 50Hz electrical energy through the power electronic inverter, filter and power transformer to supply the AC load.

[0198] The grid-connected photovoltaic power generation system includes a photovoltaic array, a high-frequency DC / DC boost circuit, a power electronic converter (inverter), and a system monitor. The working principle is that solar radiation energy is converted by the photovoltaic array, then converted into high-voltage direct current through the high-frequency DC / DC boost circuit, and then converted into sinusoidal alternating current with the same frequency and voltage as the grid voltage through the power electronic inverter, and then output to the grid.

[0199] The two photovoltaic power generation systems have respective characteristics, and can be selected according to specific application scenarios.

[0200] An embodiment of the present application provides a power utilization device including the above-mentioned solar cell or the above-mentioned photovoltaic module.

[0201] In some embodiments, the above-mentioned solar cell or photovoltaic module can be used as a power supply of the power utilization device, and can also be used as an energy storage unit of the power utilization device.

[0202] Further, the above-mentioned power utilization device can include a mobile device such as a mobile phone, a notebook computer, etc., an electric vehicle, an electric train, a ship, a satellite, etc., but is not limited thereto.

[0203] Figure 9 The power utilization device 2 is, for example, a pure electric vehicle, a hybrid electric vehicle, or a plug-in hybrid electric vehicle.

[0204] An embodiment of the present application provides a power generation device including the above-mentioned solar cell or the above-mentioned photovoltaic module.

[0205] In order to make the technical problems, technical solutions and beneficial effects solved by the present application clearer, the present application will be further described in detail below in combination with embodiments and drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The description of the at least one exemplary embodiment below is actually only illustrative, but not as any limitation on the present application and its application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0206] Unless otherwise specified in the embodiments, the techniques or conditions are performed according to the techniques or conditions described in the literature in the art or according to the product instructions. Unless otherwise specified, the reagents or instruments used are all conventional products that can be obtained on the market.

[0207] Embodiment 1

[0208] The cross-sectional structure of the perovskite solar cell device is as shown in Figure 1 .

[0209] (1) The ITO conductive glass is ultrasonically cleaned for 15 minutes in sequence with glass cleaner, deionized water, ethanol and isopropanol to serve as substrate 110 containing the first electrode layer 120.

[0210] (2) Marking P1. The first groove P1 is formed by laser cutting the ITO layer in the ITO conductive glass, as shown in the example. Figure 5 As shown. The width of the line in P1 is 50 μm.

[0211] (3) Fabrication of the hole transport layer, perovskite layer, electron transport layer, hole blocking layer, and first sub-electrode layer, such as Figure 5 As shown.

[0212] Me-2PACz was used as the hole transport material and isopropanol was used as the solvent to form a Me-2PACz solution with a concentration of 0.6 mg / mL. ITO glass was placed on a spin coater, and 30 μL of Me-2PACz solution was taken and spin-coated at 5000 rpm for 30 s. After spin-coating, it was heat-annealed at 100℃ for 10 min to obtain the hole transport layer as the first transport layer 160 with a thickness of about 1~2 nm.

[0213] A 1.4 mol / L FAPbI3 perovskite precursor solution was spin-coated onto the surface of the hole transport layer. The spin-coating parameters were: spin-coating at 1000 rpm for 20 s, then spin-coating at 4000 rpm for 35 s, and finally adding chlorobenzene antisolvent for 10 s. The mixture was then heat-annealed at 110 °C for 30 min to obtain the perovskite light-absorbing layer 130, with a thickness of 650 nm.

[0214] After cooling, a C60 layer (electron transport layer) with a thickness of 30 nm, a BCP (hole blocking layer) with a thickness of 5 nm are deposited on the surface of the perovskite light-absorbing layer as the second transport layer 170, and a Cu layer with a thickness of 60 nm is deposited as the first sub-electrode layer 143.

[0215] (4) Underline pages 12 and 14. For example... Figure 5 As shown, lines P12 and P14 are scribed using laser cutting. These lines penetrate the first sub-electrode layer 143, the second transport layer 170 (electron transport layer and hole blocking layer), the light-absorbing layer 130 (perovskite light-absorbing layer), and the first transport layer 160 (hole transport layer). The scribe lines P12 and P14 are spaced apart, with P12 located between the scribe lines P14 and P1. The width of both scribe lines P12 and P14 is 20 μm.

[0216] (5) Preparation of the protective layer. For example... Figure 6As shown, the P12 and P14 scribe lines and the area between the P12 and P14 scribe lines and the area adjacent to the P12 and P14 scribe lines are exposed by using a mask, and a protective layer 150 is formed in the P12 and P14 scribe lines and the area between the P12 and P14 scribe lines and the area adjacent to the P12 and P14 scribe lines by evaporation or sputtering. The thickness H of the protective layer 150 located above the first layer of sub-electrode layer 143, the width W1 of the protective layer 150 located above the first layer of sub-electrode layer 143 in the first direction X, and the material of the protective layer are shown in Table 1, respectively.

[0217] (6) P2 scribe line. As shown, the P2 scribe line is made by laser cutting, and the P2 scribe line is located between the P12 and P14 scribe lines and penetrates the protective layer 150, the first layer of sub-electrode layer 143, the second transport layer 170 (electron transport layer and hole blocking layer), the light absorbing layer 130 (perovskite light absorbing layer), and the first transport layer 160 (hole transport layer). The width of the P2 scribe line is 50 μm. Figure 7

[0218] (7) Second layer of sub-electrode layer preparation. As shown, 50 nm thick copper is evaporated on the first layer of sub-electrode layer 143 after the P2 scribe line in step (6) to form the second layer of sub-electrode layer 144. Figure 8

[0219] (8) P3 scribe line. After the evaporation is completed, the P3 scribe line is made, and the P3 scribe line is located between the P2 and P14, and the P3 scribe line penetrates the second layer of sub-electrode layer 144, the protective layer 150 on the first layer of sub-electrode layer 143, the first layer of sub-electrode layer 143, the second transport layer 170 (electron transport layer and hole blocking layer), the light absorbing layer 130 (perovskite light absorbing layer), and the first transport layer 160 (hole transport layer), as shown. The width of the P3 scribe line is 20 μm. Figure 1

[0220] The protective layer 150 located above the first layer of sub-electrode layer 143 is divided into the second protective layer 152 and the fourth protective layer 154 by the P2 and P3 scribe lines, and the thickness of the second protective layer 152 and the fourth protective layer 154 is the same. The width L1 of the second protective layer 152 in the first direction X and the width L2 of the fourth protective layer 154 are the same, and the sum of the widths of the P2 scribe line and the P3 scribe line in the first direction X is L3 (i.e., the distance between the second protective layer 152 and the fourth protective layer 154 in the first direction X), then W1=L1+L2+L3. The width W2 of a single sub-cell in the first direction X is 6000 microns.

[0221] (9) Packaging, the preparation of the perovskite solar cell device is completed.

[0222] Example 2

[0223] ​​​The same as example 1, the difference is only that the structure of P12 scribe in step (4) is different. Specifically, P12 scribe penetrates the first layer of sub-electrode layer 143, the second transmission layer 170 (electron transmission layer and hole blocking layer), the light absorbing layer 130 (perovskite light absorbing layer), the first transmission layer 160 (hole transmission layer) and the first electrode layer 120 (ITO layer). The cross-sectional structure of the perovskite solar cell device prepared is shown in Figure 3 .

[0224] Example 3

[0225] The same as example 1, the difference is only that the step of P1 scribe in step (2) is omitted, and the structure of P12 scribe in step (4) is different; and the material of the protective layer is different. Specifically, P12 scribe penetrates the first layer of sub-electrode layer 143, the second transmission layer 170 (electron transmission layer and hole blocking layer), the light absorbing layer 130 (perovskite light absorbing layer), the first transmission layer 160 (hole transmission layer) and the first electrode layer 120 (ITO layer). The cross-sectional structure of the perovskite solar cell device prepared is shown in Figure 4 .

[0226] Examples 4-22

[0227] The same as example 1, the difference is only that at least one parameter of the thickness H of the protective layer 150 above the first layer of sub-electrode layer 143, the width W1 of the protective layer 150 above the first layer of sub-electrode layer 143 in the first direction X, and the material of the protective layer is different, as shown in Table 1.

[0228] Comparative example 1

[0229] The same as example 1, the difference is only that P12 and P14 scribes are not performed and no protective layer is formed, and a copper electrode layer with a thickness of 110 nm is formed by one-step deposition. The specific steps are as follows:

[0230] (1) The ITO conductive glass is ultrasonically cleaned with glass cleaner, deionized water, ethanol and isopropanol for 15 min.

[0231] (2) P1 scribe. The first groove P1 is formed by laser cutting method on the ITO conductive glass to form the first groove P1. The width of P1 scribe is 50 μm.

[0232] (3) Preparation of hole transmission layer, perovskite layer, electron transmission layer and hole blocking layer.

[0233] A Me-2PACz solution with a concentration of 0.6 mg / mL was prepared by taking Me-2PACz as a hole transport material and isopropyl alcohol as a solvent; the ITO glass was placed on a spin coater, 30 μL of the Me-2PACz solution was taken, and spin coating was performed at 5000 rpm for 30 s, followed by heat annealing treatment at 100 ℃ for 10 min, to obtain a hole transport layer.

[0234] A 1.4 mol / L FAPbI3 perovskite solution was spin-coated onto the surface of the hole transport layer, the spin-coating parameters were as follows: spin-coating at 1000 rpm for 20 s, then spin-coating at 4000 rpm for 35 s, and finally dropwise adding chlorobenzene anti-solvent for 10 s, and heat annealing treatment at 110 ℃ for 30 min, to obtain a perovskite light-absorbing layer.

[0235] After cooling, a 30-nm-thick C60 layer (electron transport layer) and a 5-nm-thick BCP (hole blocking layer) were respectively evaporated on the surface of the perovskite light-absorbing layer.

[0236] (4) P2 scribing. P2 scribing was performed by laser cutting, and the P2 scribe line penetrated the electron transport layer, the perovskite light-absorbing layer and the hole transport layer; the width of the P2 scribe line was 50 μm.

[0237] (5) Second electrode layer preparation. A 110-nm-thick copper electrode layer was evaporated on the first layer sub-electrode layer after P2 scribing in step (4).

[0238] (8) P3 scribing. After the evaporation was completed, P3 scribing was performed, the P2 scribe line was located between P1 and 3, and the P3 scribe line penetrated the copper electrode layer, the electron transport layer, the perovskite light-absorbing layer and the hole transport layer. The width of the P3 scribe line was 20 μm.

[0239] (9) Packaging, to complete the preparation of the perovskite solar cell device.

[0240] Comparative Example 2

[0241] The same as in Example 1, except that in step (3), the first layer sub-electrode layer 143 was not formed on the second transport layer 170. The protective layer 150 was formed on the entire second transport layer 170 region in the subsequent step (5); correspondingly, in step (7), a 110-nm-thick copper was evaporated on the second transport layer 170 after P2 scribing in step (6) as the second electrode layer 140; and the material and thickness of the protective layer are shown in Table 1.

[0242] Comparative Example 3

[0243] The same as Example 19, except that in step (3), the first layer sub-electrode layer 143 is not formed on the second transport layer 170; accordingly, the thickness of the second layer sub-electrode layer 144 is adjusted to be the sum of the thicknesses of the first layer sub-electrode layer 143 and the second layer sub-electrode layer 144 in Example 1, so that the protective layer is disposed between the second transport layer and the second electrode layer.

[0244] Comparative Example 4

[0245] The same as Example 20, except that in step (3), the first layer sub-electrode layer 143 is not formed on the second transport layer 170; accordingly, the thickness of the second layer sub-electrode layer 144 is adjusted to be the sum of the thicknesses of the first layer sub-electrode layer 143 and the second layer sub-electrode layer 144 in Example 1, so that the protective layer is disposed between the second transport layer and the second electrode layer.

[0246] The following are performance tests.

[0247] (1) IV test: use a AAA-grade solar simulator as a light source, a high-precision source table as a test device, the voltage scanning range is from -0.5V to 48V, the data acquisition delay is 20ms, the current and voltage data are collected, the program draws an I-V curve with voltage as the horizontal axis and current as the vertical axis, the horizontal axis intercept is the open-circuit voltage Voc, the vertical axis intercept is the short-circuit current Jsc, the product of I and V on the IV curve is the power under the corresponding load, and the ratio of the maximum power to the solar simulator irradiation power is the efficiency PCE. Take the average of multiple data under the same experimental conditions. The PCE is shown in Table 1.

[0248] (2) Aging performance test:

[0249] Place the device in an aging oven controlled at 85°C, continuously illuminate by using a AAA-grade solar simulator as a light source, test the PCE according to the above IV test, and record the aging time corresponding to the PCE being 80% of the initial PCE. The initial PCE and the aging time are shown in Table 1.

[0250] Table 1

[0251]

[0252] Comparative Example 1 does not have a protective layer, and its initial PCE is still acceptable, but the aging time is very short, indicating that its photoelectric performance stability is poor.

[0253] Comparative Example 2 does not have a first layer sub-electrode layer and the protective layer is disposed in the whole layer, and the protective layer is aluminum oxide. Although it has a protective effect, due to the insulating properties of aluminum oxide, the PCE performance is very low.

[0254] Comparative Examples 3-4 do not have the first sub-electrode layer, and the initial PCE and aging time are reduced compared to Examples 19 and 20, indicating that the PEC performance and photoelectric performance stability are reduced. As can be seen from Comparative Examples 3-4, as the thickness of the protective layer having insulating properties increases, the sub-cell "dead zone" increases, the series resistance increases, the transmission deteriorates, and the PCE performance of the solar device deteriorates.

[0255] The embodiments improve the PEC performance and photoelectric performance stability of the solar device by the protective layer provided by the present application.

[0256] The technical features of the above-described embodiments can be combined in any manner. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described, but as long as the combinations of the technical features do not contradict, they should be considered within the scope of the present application.

[0257] The above-described embodiments only express several implementation manners of the present application, and the description is relatively specific and detailed, but it should not be understood as a limitation on the scope of the patent. It should be pointed out that for those skilled in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which are all within the protection scope of the present application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims.

Claims

1. A solar cell, characterized by, The solar cell comprises a first electrode layer, a light-absorbing layer and a second electrode layer arranged in a stack; The solar cell is provided with a first groove, a second groove and a third groove, the first groove is arranged in the first electrode layer and divides the first electrode layer along the thickness direction of the solar cell, the second groove divides the light-absorbing layer and part of the second electrode layer along the thickness direction of the solar cell and exposes the first electrode layer, and the third groove divides the second electrode layer along the thickness direction of the solar cell; The second electrode layer comprises a main conductive part arranged on the side of the light-absorbing layer away from the first electrode layer and a connecting conductive part arranged in the second groove, the main conductive part and the connecting conductive part are connected, and the connecting conductive part is connected with the first electrode layer; The solar cell further comprises a first protection groove, the first protection groove divides the light-absorbing layer and part of the second electrode layer along the thickness direction of the solar cell, the second groove is located between the first protection groove and the third groove, the solar cell further comprises a first protection layer and a second protection layer, the first protection layer is filled in the first protection groove and separates the light-absorbing layer and the connecting conductive part along a first direction, the second protection layer is at least wrapped by the main conductive part along two sides in the thickness direction of the solar cell and is connected with the first protection layer, a projection of the second protection layer on the first electrode layer along the thickness direction of the solar cell is smaller than a projection of the light-absorbing layer on the first electrode layer along the thickness direction of the solar cell, and the first direction intersects the thickness direction of the solar cell.

2. The solar cell according to claim 1, characterized in that, The solar cell is provided with a second protection groove, the second protection groove divides the light-absorbing layer and part of the second electrode layer along the thickness direction of the solar cell, and the second protection groove and the first protection groove are respectively located on two sides of the second groove along a first direction; The solar cell further comprises a third protection layer and a fourth protection layer, the third protection layer is arranged in the second protection groove and separates the light-absorbing layer and the connecting conductive part in the second groove along a first direction, the fourth protection layer is at least wrapped by the main conductive part along a side close to the light-absorbing layer in the thickness direction of the solar cell and is connected with the third protection layer, and a projection of the fourth protection layer on the first electrode layer along the thickness direction of the solar cell is smaller than a projection of the light-absorbing layer on the first electrode layer along the thickness direction of the solar cell.

3. The solar cell according to claim 2, characterized in that, The third groove separates the connecting conductive part and the third protection layer along a first direction; Alternatively, the third groove divides the main conductive part on the fourth protection layer along the thickness direction of the solar cell.

4. The solar cell of claim 2, wherein A span of the second protective layer and the fourth protective layer in a first direction is denoted as W1, a width of the second protective layer and the fourth protective layer in the first direction is respectively denoted as L1 and L2, a spacing between the second protective layer and the fourth protective layer in the first direction is denoted as L3, W1=L1+L2+L3, a width of a sub-cell of the solar cell divided in the first direction is W2, Wherein, W1 / W2≤80%.

5. The solar cell according to claim 4, characterized in that, W1 / W2 is 2.5%~50%, which can be 5%~40%.

6. The solar cell of claim 4, wherein, W1=150μm~3000μm, which can be 150μm~700μm.

7. The solar cell according to any one of claims 2 to 6, characterized in that, A thickness of the second protective layer and the fourth protective layer is independently 5nm~200nm, which can be 10nm~80nm.

8. The solar cell according to any one of claims 2 to 7, characterized in that, A width of the first protective groove and the second protective groove is independently 15μm~100μm.

9. The solar cell according to any one of claims 1 to 7, characterized in that, The first groove and the first protective groove are staggered.

10. The solar cell of claim 8, wherein, The second protective groove exposes the first electrode layer, and the first protective layer is arranged on the first electrode layer in the first protective groove.

11. The solar cell of claim 8, wherein, The first protective layer is embedded in the first electrode layer.

12. The solar cell according to any one of claims 2 to 7, characterized in that, Materials of the first protective layer, the second protective layer, the third protective layer and the fourth protective layer independently include at least one of conductive material and insulating material.

13. The solar cell of claim 12, wherein, Materials of the first protective layer, the second protective layer, the third protective layer and the fourth protective layer independently include one or more of aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, tin oxide, FTO, ITO, AZO, ATO, IGO, BZO and Cr.

14. The solar cell according to any one of claims 1 to 7, characterized in that, The first groove and the first protective groove are communicated, the first protective layer is further embedded in the first groove and separates the first electrode layer, and a material of the first protective layer is insulating material.

15. The solar cell according to any one of claims 2 to 7, characterized in that, In a thickness direction of the solar cell, the main body conductive part includes a first layer of sub-electrode layer and a second layer of sub-electrode layer arranged in layers, the first layer of sub-electrode layer is located between the light-absorbing layer and the second layer of sub-electrode layer in the thickness direction of the solar cell, and the second protective layer and / or the fourth protective layer is located on the first layer of sub-electrode layer and is partially covered by the second layer of sub-electrode layer in the thickness direction of the solar cell.

16. The solar cell according to any one of claims 1 to 15, characterized in that, The solar cell satisfies one or more of the following conditions: (1) The light-absorbing layer is a perovskite light-absorbing layer; (2) The solar cell further includes a first transport layer and a second transport layer, the first transport layer is located between the first electrode layer and the light-absorbing layer, the second transport layer is located between the light-absorbing layer and the third electrode layer, the first transport layer is one of an electron transport layer and a hole transport layer, and the second transport layer is the other of the electron transport layer and the hole transport layer.

17. A method for preparing a solar cell, characterized in that, The method includes the following steps: A first groove for dividing the first electrode layer is arranged on the first electrode layer; A light-absorbing layer and a first layer of sub-electrode layer are arranged in sequence on the first electrode layer provided with the first groove, and a first protective groove is arranged on the light-absorbing layer and the first layer of sub-electrode layer; forming a protection layer on part of the area in the first protection groove and on the first layer of sub-electrode layer; forming a second groove on the obtained battery structure, the second groove dividing the protection layer on the first layer of sub-electrode layer, the first layer of sub-electrode layer and the light-absorbing layer; forming a second layer of sub-electrode layer on the obtained battery structure and in the second groove; forming a third groove on the second electrode layer composed of the first layer of sub-electrode layer and the second layer of sub-electrode layer, the third groove dividing the second electrode layer.

18. The method of producing a solar cell according to claim 17, wherein Before forming the protection layer, further comprising the following steps: forming a second protection groove on the light-absorbing layer and the first layer of sub-electrode layer, the second protection groove being spaced apart from the first protection groove; correspondingly, exposing the second protection groove, the first protection groove, the area between the two protection grooves and the part of the first layer of sub-electrode layer adjacent to the protection grooves to form the protection layer on the exposed area; the second groove is located between the second protection groove and the first protection groove.

19. The method for manufacturing a solar cell according to claim 17 or 18, wherein the first groove and the first protection groove are staggered or not staggered with each other.

20. A method for preparing a solar cell, characterized in that, comprising the following steps: forming a light-absorbing layer and a first layer of sub-electrode layer on the first electrode layer in sequence, forming a first protection groove on the light-absorbing layer and the first layer of sub-electrode layer, and forming a first groove on the first electrode layer below the first protection groove; forming a protection layer on part of the area in the first groove, the first protection groove and the first layer of sub-electrode layer; forming a second groove on the obtained battery structure, the second groove dividing the protection layer on the first layer of sub-electrode layer, the first layer of sub-electrode layer and the light-absorbing layer; forming a second layer of sub-electrode layer on the obtained battery structure and in the second groove; forming a third groove on the second electrode layer composed of the first layer of sub-electrode layer and the second layer of sub-electrode layer, the third groove dividing the second electrode layer.

21. A photovoltaic module, characterized by, solar cell as claimed in any one of claims 1 to 16, solar cell prepared by the method as claimed in any one of claims 17 to 20 and photovoltaic module as claimed in claim 21.

22. An electrical device, comprising: solar cell as claimed in any one of claims 1 to 16, solar cell prepared by the method as claimed in any one of claims 17 to 20 and photovoltaic module as claimed in claim 21.

23. A power generation device characterized by comprising: solar cell as claimed in any one of claims 1 to 16, solar cell prepared by the method as claimed in any one of claims 17 to 20 and photovoltaic module as claimed in claim 21.

Images