Electronic device, magnetoresistive device and method of manufacturing the same

Abstract

The application discloses an electronic device, a magnetoresistance device and a preparation method thereof. The magnetoresistance device comprises a substrate, a magnetic response device arranged on one side of the substrate and comprising a magnetic functional layer, and an inductor coil arranged on the same side of the substrate as the magnetic response device. The inductor coil comprises a first trace and a second trace, the second trace is arranged on the side of the first trace away from the substrate, and the inductor coil further comprises a first connecting line for connecting the first trace and the second trace. In the thickness direction of the substrate, the lower surface of the magnetic functional layer is higher than the lower surface of the first trace, and the upper surface of the magnetic functional layer is lower than the upper surface of the second trace.

Description

Technical Field

[0001] This invention relates to the field of magnetoresistive device technology, and in particular to an electronic device, a magnetoresistive device, and a method for fabricating the same. Background Technology

[0002] With the development of technology, magnetoresistive devices have received widespread attention in the field of integrated circuits. They are a type of semiconductor or magnetic thin-film device that operates by utilizing the physical phenomenon that the resistance of a material changes with an external magnetic field. The core function of magnetoresistive devices is "magnet-to-electric conversion," that is, converting magnetic field information into a measurable electrical signal.

[0003] Currently, existing magnetoresistive devices still need improvement. Summary of the Invention

[0004] The purpose of this application is to provide an electronic device, a magnetoresistive device, and a method for fabricating a magnetoresistive device.

[0005] This application discloses a magnetoresistive device, comprising: a substrate; a magnetic response device disposed on one side of the substrate and including a magnetic functional layer; an inductor coil located on the same side of the substrate as the magnetic response device; the inductor coil including a first trace and a second trace, the second trace being located on the side of the first trace facing away from the substrate; the inductor coil further including a first connecting line for connecting the first trace and the second trace; wherein, in the thickness direction of the substrate, the lower surface of the magnetic functional layer is higher than the lower surface of the first trace, and the upper surface of the magnetic functional layer is lower than the upper surface of the second trace.

[0006] In some alternative embodiments, the magnetic response device further includes: a first electrode disposed on the side of the magnetic functional layer facing the substrate; and the first trace disposed on the same layer as the first electrode.

[0007] In some alternative embodiments, the magnetic response device further includes: a second electrode disposed on the side of the magnetic functional layer facing away from the substrate; a first lead-out disposed on the side of the second electrode facing away from the substrate; and a second trace disposed in the same layer as the first lead-out, wherein the first lead-out is made of a different material than the second electrode.

[0008] In some alternative embodiments, the magnetic response device further includes: a second lead-out located on the same side of the magnetic functional layer as the first lead-out; the second lead-out and the first electrode overlapping in orthographic projection on the substrate; and a second connecting line located between the first electrode and the second lead-out and connecting the first electrode and the second lead-out.

[0009] In some alternative embodiments, the second lead-out portion is disposed on the same layer as the first lead-out portion, and the height of the first connecting line is the same as the height of the second connecting line.

[0010] In some alternative embodiments, the number of inductors is multiple, and the orthographic projections of the multiple inductors on the substrate surround the orthographic projection of the magnetic functional layer on the substrate.

[0011] In some alternative embodiments, there are multiple first traces distributed along a first direction; the extension direction of the first traces intersects the first direction; there are multiple second traces distributed along the first direction, the extension direction of the second traces intersects the first direction and also intersects the extension direction of the first traces; for any second trace, one end of the second trace overlaps with the orthographic projection of the end of one of the two adjacent first traces on the substrate, and the other end of the second trace overlaps with the orthographic projection of the end of the other of the two adjacent first traces on the substrate; in the first direction, the magnetic functional layer is located on one side of the inductor coil.

[0012] In some alternative embodiments, the number of inductor coils is two, and in the first direction, the two inductor coils are located on both sides of the magnetic functional layer.

[0013] This application also discloses a method for fabricating a magnetoresistive device, comprising:

[0014] Provide substrate;

[0015] A first insulating layer is formed on one side of the substrate;

[0016] Along a direction away from the substrate, a first conductive layer, a magnetic functional material layer, and a second conductive layer are sequentially formed on the first insulating layer;

[0017] The second conductive layer and the magnetic functional material layer are patterned to form a second electrode and a magnetic functional layer; the orthographic projection of the magnetic functional layer on the substrate overlaps with the orthographic projection of the second electrode on the substrate.

[0018] The first conductive layer is patterned to form a first electrode and a plurality of first traces; the orthographic projection of the magnetic functional layer on the substrate overlaps with the orthographic projection of the first electrode on the substrate;

[0019] A second insulating layer is formed to cover the first electrode and the plurality of first traces, wherein the upper surface of the second insulating layer is flush with the upper surface of the second electrode;

[0020] A plurality of first openings and second openings are formed on the second insulating layer, the second openings exposing the first electrode, and each first opening exposing one end of a first trace;

[0021] A first connecting line is formed within each of the first openings, and a second connecting line is formed within each of the second openings;

[0022] A third conductive layer is formed covering the second insulating layer;

[0023] The third conductive layer is patterned to form a first lead-out portion, a second lead-out portion, and a plurality of second traces of an inductor coil. The first lead-out portion is located on the side of the second electrode facing away from the substrate. The second lead-out portion covers the second trace. The two ends of the second trace are respectively connected to two of the first traces.

[0024] This application also discloses an electronic device including any of the magnetoresistive devices described above.

[0025] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this specification. Attached Figure Description

[0026] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this specification and, together with the description, serve to explain the principles of this specification.

[0027] Figure 1 This is a schematic diagram of the fabrication method of the magnetoresistive device of this application after the formation of the second conductive layer.

[0028] Figure 2 This is a schematic diagram of the fabrication method of the magnetoresistive device of this application after the formation of the magnetic functional layer.

[0029] Figure 3 This is a schematic diagram of the fabrication method of the magnetoresistive device of this application after the formation of the second insulating layer.

[0030] Figure 4 This is a schematic diagram of the fabrication method of the magnetoresistive device according to this application after the formation of the first and second interconnects.

[0031] Figure 5 This is a schematic diagram of the fabrication method of the magnetoresistive device of this application after the formation of the third conductive layer.

[0032] Figure 6 This is a schematic diagram of the magnetoresistive device of this application.

[0033] Figure 7 This is a schematic diagram of the stacking of the first trace, the second insulating layer, and the second trace in the magnetoresistive device of this application.

[0034] Figure 8 This is a schematic diagram showing the connection of the first trace, the first connection line, and the second trace in the magnetoresistive device of this application.

[0035] Figure 9 This is a schematic diagram of multiple magnetic functional layers in the magnetoresistive device of this application.

[0036] Reference numerals: 1. Substrate; 2. First insulating layer; 3. Inductor coil; 301. First trace; 302. First connection; 303. Second trace; 4. Magnetic response device; 401. First electrode; 402. Magnetic functional layer; 403. Second electrode; 404. First lead-out portion; 405. Second connection; 406. Second lead-out portion; 5. Insulating portion; 6. Passivation layer; 7. Second insulating layer; 8. First conductive layer; 9. Magnetic functional material layer; 10. Second conductive layer; 11. Third conductive layer; 12. First opening; 13. Second opening; X, First direction. Detailed Implementation

[0037] The technical solutions in the embodiments (or "implementations") of this application will be clearly and completely described herein with reference to the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements.

[0038] If the embodiments of this application contain terms relating to directional indications or positional relationships (such as up, down, left, right, front, back, inside, outside, top, bottom, center, vertical, horizontal, longitudinal, transverse, length, width, counterclockwise, clockwise, axial, radial, circumferential, etc.), such terms are only used to explain the relative positional relationships and movement of the components in a specific posture (as shown in the attached figures); if the specific posture changes, the directional indications or positional relationships will also change accordingly. Furthermore, the terms "first" and "second" used in the embodiments of this application are only for descriptive convenience and should not be construed as indicating or implying relative importance.

[0039] In related technologies, magnetic response devices and inductors are typically vertically distributed within a chip, with the magnetic response device located on the lower layer and the inductor on the upper layer, electrically isolated from each other by an insulating layer. This vertical distribution structure results in a large distance between the magnetic response device and the inductor, which not only increases magnetic field transmission loss and reduces the signal-to-noise ratio, but also increases device power consumption due to the need for additional isolation layers and wiring space.

[0040] In the storage field, novel magnetoresistive devices typically require an auxiliary magnetic field to achieve stable and controllable electrical writing. Simultaneously, this unique writing mechanism leads to high sensitivity to external interfering magnetic fields, necessitating external magnetic shielding. In the sensing field, magnetoresistive devices need to convert their response to magnetic fields into electrical changes. Under strong magnetic fields, magnetoresistive devices lose their operational capability due to magnetic saturation; and magnetoresistive devices with high magnetic saturation strength exhibit low sensitivity, affecting their sensing ability. Particularly in "electromagnetic-electromagnetic" conversion scenarios (such as magnetic isolators, where the magnetic field source is integrated internally rather than externally), the inductor coil above the magnetoresistive device not only occupies a significant amount of chip area but also requires a strong current drive to generate a sufficiently strong induced magnetic field (resulting in very high power consumption). We propose a magnetoresistive device-coil structure that comprehensively solves all the aforementioned problems.

[0041] This application provides a magnetoresistive device, which can be a magnetic random access memory, a magnetoresistive sensor, a magnetoresistive isolator, etc. Figure 6 , Figure 7 as well as Figure 8 As shown, the magnetoresistive device may include: a substrate 1; a magnetic response device 4 disposed on one side of the substrate 1 and including a magnetic functional layer 402; an inductor coil 3 located on the same side of the substrate 1 as the magnetic response device 4; the inductor coil 3 includes a first trace 301 and a second trace 303, the second trace 303 being located on the side of the first trace 301 facing away from the substrate 1; the inductor coil 3 also includes a first connecting line 302 for connecting the first trace 301 and the second trace 303; wherein, in the thickness direction of the substrate 1, the lower surface of the magnetic functional layer 402 is higher than the lower surface of the first trace 301, and the upper surface of the magnetic functional layer 402 is lower than the upper surface of the second trace 303.

[0042] In this application's magnetoresistive device, the lower surface of the magnetic functional layer 402 is higher than the lower surface of the first trace 301, and the upper surface of the magnetic functional layer 402 is lower than the upper surface of the second trace 303. This arrangement allows the magnetic functional layer 402 to be located in the space between the first trace 301 and the second trace 303, i.e., the "sandwich" region of the inductor coil 3, which improves magnetic field utilization, reduces drive power consumption, and improves the signal-to-noise ratio. It transforms the traditional longitudinal insulation isolation (vertical distribution structure in related technologies) into lateral isolation, eliminating the insulation layer thickness requirement. The number of turns of the inductor coil 3 is basically not limited by the horizontal area, which can reduce the coil design area and generate a larger adjustable magnetic field range. The inductor coil 3 can be designed in front of, behind, to the left or right of the response device, and can generate an electromagnetic magnetic field in any horizontal direction to counteract the external magnetic field, increasing the sensor's ability to work under high magnetic fields.

[0043] The following is a detailed description of each part of the magnetoresistive device according to the embodiments of this application:

[0044] Substrate 1 is located at the bottom layer of the magnetoresistive device, providing a supporting foundation for the entire device structure. The material of substrate 1 can be a semiconductor material (such as single-crystal silicon, germanium silicon, etc.), an insulating material (such as sapphire, glass, etc.), or other substrate materials suitable for integrated circuit manufacturing. Substrate 1 is typically a planar sheet structure. Furthermore, for non-insulating materials, a first insulating layer 2 is also provided on substrate 1.

[0045] The magnetic response device 4 is disposed on one side of the substrate 1 (e.g., above the substrate 1). Further, the magnetic response device 4 can be disposed on the side of the first insulating layer 2 facing away from the substrate 1. The magnetic response device 4 is a core component for information storage or transmission, and its main structure is a magnetic functional layer 402. In one embodiment, the magnetic functional layer 402 can be a magnetic tunnel junction, whose material typically includes a magnetic layer and a tunnel barrier layer. For example, from bottom to top, it can be a reference layer (such as CoFeB, iron, nickel, cobalt, and their alloys), a tunnel barrier layer (such as MgO, alumina, titanium oxide, etc.), and a free layer (such as CoFeB, iron, nickel, cobalt, and their alloys), each layer being prepared by methods such as magnetron sputtering or atomic layer deposition. In another embodiment, the magnetic functional layer 402 can be a metallic multilayer film, from bottom to top, consisting of a reference layer (such as CoFeB, iron, nickel, cobalt, and their alloys), a metal layer (such as Cu), and a free layer (such as CoFeB, iron, nickel, cobalt, and their alloys), exhibiting a giant magnetoresistance effect. The magnetic functional layer 402 is generally cylindrical, elliptical, or cuboid in shape. The magnetic tunnel junction exhibits tunneling magnetoresistance; its magnetic state (the angle between the free layer magnetic moment and the reference layer) corresponds to different resistance values, thus enabling magneto-electric information conversion. The resistance change of the magnetic tunnel junction can be achieved either by rewriting the free layer magnetic moment using the magnetic field provided by the inductor coil 3, or by electrical writing within the tunnel junction itself. For electrical writing (spin-orbital torque (SOT), voltage-controlled magnetic anisotropy (VCMA), etc.), the inductor coil 3 can provide a small magnetic field to assist in electrical writing and can also act as a diamagnetic structure to counteract external magnetic interference.

[0046] The magnetic response device 4 also includes a first electrode 401, which is disposed on the side of the magnetic functional layer 402 facing the substrate 1, and its orthographic projection on the substrate 1 overlaps with the orthographic projection of the magnetic functional layer 402. Further, the orthographic projection of the magnetic functional layer 402 on the substrate 1 is located within the orthographic projection area of ​​the first electrode 401 on the substrate 1, meaning the size of the first electrode 401 is larger than the bottom size of the magnetic functional layer 402, ensuring effective electrical connection. The material of the first electrode 401 can be a metal with good electrical conductivity (such as Al, Ta, Ru, etc.), and its shape is a sheet-like or columnar structure matching the bottom of the magnetic functional layer 402.

[0047] The magnetic response device 4 also includes a second electrode 403. The second electrode 403 is disposed on the side of the magnetic functional layer 402 facing away from the substrate 1, and the material can be the same as or different from the first electrode 401 (such as Ta, Ru, TiN, etc.). Using titanium nitride (TiN) as the material of the second electrode 403 can effectively protect the underlying magnetic layer (especially oxygen-sensitive CoFeB) from oxidation during subsequent processes and long-term use, and can also stabilize the interface structure, preventing element interdiffusion that leads to performance degradation. The shape of the second electrode 403 is a sheet-like structure or a columnar structure covering the top of the magnetic functional layer 402. The magnetic response device 4 also includes a first lead-out portion 404. The first lead-out portion 404 is disposed on the side of the second electrode 403 facing away from the substrate 1, and the material of the first lead-out portion 404 is different from that of the second electrode 403. For example, the material of the first lead-out portion 404 can be a metal with good electrical conductivity (such as Ta, Ru, Cu, etc.). Furthermore, as... Figure 9 As shown, the number of magnetic response devices 4 in this application can be multiple. The magnetic response devices 4 can be connected in series, in parallel, or arranged discretely. Taking at least some of the magnetic response devices 4 connected in parallel as an example, the multiple magnetic response devices 4 connected in parallel can share the first electrode 401, the second electrode 403, or the first lead-out portion 404.

[0048] The inductor coil 3 and the magnetic response device 4 are located on the same side of the substrate 1, and can be used to generate a writing magnetic field or auxiliary magnetic field to regulate the magnetic state of the magnetic functional layer 402. The inductor coil 3 includes a first trace 301, a second trace 303, and a first interconnect 302. The first trace 301 is located on the side of the first insulating layer 2 facing away from the substrate 1, and is disposed in the same layer as the first electrode 401 of the magnetic response device 4; that is, the first trace 301 and the first electrode 401 are patterned from the same conductive layer. The material of the first trace 301 can be a metal (such as Cu, Al, Ag, etc.), and its shape is a long strip trace structure. There are multiple first traces 301, and the multiple first traces 301 are arranged along a first direction X (see...). Figure 7 The first traces 301 are distributed in a parallel manner. The extension direction of each first trace 301 intersects the first direction X. The angle between the extension direction of the first trace 301 and the first direction X can be acute, obtuse, or right. The ends of each first trace 301 are used to connect to a first connecting line 302. The function of the first traces 301 is to form the underlying conductive path of the inductor coil 3, and to form a spiral coil structure in conjunction with the second trace 303 and the first connecting line 302 to generate a magnetic field of the target strength.

[0049] The second trace 303 is located on the side of the first trace 301 facing away from the substrate 1, above the first trace 301, and electrically connected to the first trace 301 via a first connecting line 302. The material of the second trace 303 is the same as or similar to that of the first trace 301 (e.g., Cu, Al), and it has a long strip-shaped trace structure. There are multiple second traces 303, which are spaced apart along the first direction X, and can be arranged in parallel. The extension direction of the second trace 303 intersects the extension direction of the first trace 301 and also intersects the first direction X. The second trace 303 is disposed on the same layer as the first lead-out portion 404.

[0050] For any second trace 303, one end of the second trace 303 overlaps with the orthographic projection of the end of one of the two adjacent first traces 301 onto the substrate 1, and the other end of the second trace 303 overlaps with the orthographic projection of the end of the other of the two adjacent first traces 301 onto the substrate 1. The two ends of the aforementioned orthographic projection overlap are connected by a first connecting line 302, that is, both ends of any second trace 303 are respectively connected to the ends of the two adjacent first traces 301 through the first connecting line 302. The second traces 303 constitute the upper conductive path of the inductor coil 3, and together with the first traces 301, form a three-dimensional coil structure, enhancing the magnetic field strength and optimizing the magnetic field direction. The number of second traces 303 may be one less than the number of first traces 301, but this application does not limit this.

[0051] The material of the first connecting line 302 is a conductive metal (such as W, Cu, etc.), and its shape is a columnar or plug-like structure. The function of the first connecting line 302 is to realize the electrical connection between the first trace 301 and the second trace 303, so that current can flow between the first trace 301 and the second trace 303, thereby forming a complete coil current path.

[0052] The magnetoresistive device of this application may further include a second insulating layer 7 covering the first electrode 401 and the plurality of first traces 301. The first lead portion and the plurality of second traces 303 are located on the surface of the second insulating layer 7 facing away from the substrate 1. The first interconnect 302 penetrates the second insulating layer 7.

[0053] The aforementioned magnetic response device 4 further includes a second lead-out portion 406 and a second connecting line 405. The second lead-out portion 406 and the first lead-out portion 404 are located on the same side of the magnetic functional layer 402, specifically, the second lead-out portion 406 and the first lead-out portion 404 are disposed in the same layer. The material of the second lead-out portion 406 is the same as that of the first lead-out portion 404. The orthographic projection of the second lead-out portion 406 on the substrate 1 overlaps with the orthographic projection of the first electrode 401 on the substrate 1. In the thickness direction of the substrate 1, the second connecting line 405 is located between the first electrode 401 and the second lead-out portion 406, and penetrates the second insulating layer 7. The material is the same as that of the first connecting line 302 (such as W, Cu), the shape is a columnar structure, and the height is the same as that of the first connecting line 302. Its function is to electrically connect the first electrode 401 and the second lead-out portion 406 to form a complete lower electrode lead-out path. This application also includes an insulating portion 5. The insulating portion 5 can be provided between the adjacent second trace 303 and the first lead-out portion 404. Of course, the insulating portion 5 can also be provided between adjacent first lead-out portions 404 and second lead-out portions 406. The material of the insulating portion 5 can be the same as the material of the second insulating layer 7.

[0054] Furthermore, in the first direction X, the magnetic functional layer 402 is located on one side of the inductor coil 3. Taking a plurality of inductor coils 3 as an example, the orthographic projections of the plurality of inductor coils 3 on the substrate 1 surround the orthographic projection of the magnetic functional layer 402. Further, taking a plurality of inductor coils 3 as an example, the two inductor coils 3 are respectively located on both sides of the magnetic functional layer 402 in the first direction X to generate a uniform control magnetic field. The first trace 301 and the second trace 303 of each inductor coil 3 are designed according to the above structure. The magnetoresistive device of this application may further include a passivation layer 6 covering the first lead 404, the second lead 406, and the plurality of second traces 303. The passivation layer 6 may be an insulating layer.

[0055] This application also provides a method for fabricating a magnetoresistive device, used to fabricate the aforementioned magnetoresistive device. The fabrication method may include steps S10-S110, wherein:

[0056] Step S10: As Figure 1 As shown, substrate 1 is provided;

[0057] The substrate 1 can be cleaned to remove surface impurities and the natural oxide layer.

[0058] Step S20: As Figure 1 As shown, a first insulating layer 2 is formed on one side of the substrate 1;

[0059] The first insulating layer 2 can be formed by methods such as chemical vapor deposition (CVD) or thermal oxidation growth.

[0060] Step S30: As Figure 1As shown, along the direction away from the substrate 1, a first conductive layer 8, a magnetic functional material layer 9, and a second conductive layer 10 are sequentially formed on the first insulating layer 2.

[0061] The first conductive layer 8 can be formed by sputtering. The magnetic functional material layer 9 can be formed sequentially as a reference layer, a barrier layer, and a free layer by sputtering. The second conductive layer 10 can be formed by sputtering. Then, the magnetic thin film is annealed to form the reference layer.

[0062] Step S40: As Figure 2 As shown, the second conductive layer 10 and the magnetic functional material layer 9 are patterned to form the second electrode 403 and the magnetic functional layer 402.

[0063] Patterning can be achieved using photolithography and etching processes.

[0064] Step S50: As Figure 3 As shown, the first conductive layer 8 is patterned to form the first electrode 401 and a plurality of first traces 301 of the inductor coil 3;

[0065] First, the patterns of the first electrode 401 and the first trace 301 are defined by photolithography, and then the first conductive layer 8 is etched to form the first electrode 401 and the first trace 301.

[0066] Step S60: As Figure 3 As shown, a second insulating layer 7 is formed covering the first electrode 401 and a plurality of first traces 301;

[0067] The second insulating layer 7 is formed by CVD method. The upper surface of the formed second insulating layer 7 is flush with the upper surface of the second electrode 403, that is, the second insulating layer 7 surrounds the second electrode 403 and the magnetic functional layer 402.

[0068] Step S70: As Figure 4 As shown, a plurality of first openings 12 and second openings 13 are formed on the second insulating layer 7; the second openings 13 expose the first electrode 401, and each first opening 12 exposes one end of a first trace 301.

[0069] The first opening 12 and the second opening 13 are formed using photolithography and etching processes.

[0070] Step S80: As Figure 4 As shown, a first connecting line 302 is formed in each of the first openings 12, and a second connecting line 405 is formed in the second opening 13.

[0071] The first connecting line 302 and the second connecting line 405 are formed by chemical plating or physical vapor deposition, filling the first opening 12 and the second opening 13 to form a columnar connection.

[0072] Step S90: As Figure 5 As shown, a third conductive layer 11 is formed covering the second insulating layer 7;

[0073] The third conductive layer 11 is formed by sputtering.

[0074] Step S100: As Figure 6 As shown, the third conductive layer 11 is patterned to form a first lead-out 404, a second lead-out 406, and a plurality of second traces 303 of the inductor coil 3;

[0075] The patterning process employs photolithography and etching.

[0076] Step S110: As Figure 6 As shown, a passivation layer 6 is formed covering the first lead-out portion 404, the second lead-out portion 406, and a plurality of second traces 303.

[0077] The passivation layer 6 is formed by CVD and is made of silicon nitride or silicon dioxide to protect the internal structure from the influence of the external environment.

[0078] This application also discloses an electronic device including any of the magnetoresistive devices described above. This electronic device can be a mobile phone, computer, tablet, etc.

[0079] It should be noted that the technical solutions or features described in the above embodiments can be combined or supplemented with each other without conflict. The scope of protection of this application is not limited to the precise structures described in the above embodiments and shown in the accompanying drawings; all modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.

Claims

1. A magnetoresistive device, characterized by, The application relates to a magnetic response device, comprising: a substrate; a magnetic response device arranged on one side of the substrate and comprising a magnetic functional layer; an inductor coil arranged on the same side of the substrate as the magnetic response device; the inductor coil comprises a first trace and a second trace, the second trace is arranged on the side of the first trace away from the substrate; the inductor coil further comprises a first connecting line for connecting the first trace and the second trace; wherein, in the thickness direction of the substrate, the lower surface of the magnetic functional layer is higher than the lower surface of the first trace, and the upper surface of the magnetic functional layer is lower than the upper surface of the second trace. The magnetic response device further comprises: a first electrode arranged on the side of the magnetic functional layer facing the substrate; and the first trace is arranged in the same layer as the first electrode. The magnetic response device further comprises: a second electrode arranged on the side of the magnetic functional layer away from the substrate; a first lead-out portion arranged on the side of the second electrode away from the substrate; the second trace is arranged in the same layer as the first lead-out portion, and the material of the first lead-out portion is different from that of the second electrode. The magnetic response device further comprises: a second lead-out portion arranged on the same side of the magnetic functional layer as the first lead-out portion; the second lead-out portion and the first electrode are partially overlapped in the orthographic projection on the substrate; and a second connecting line arranged between and connecting the first electrode and the second lead-out portion. The second lead-out portion is arranged in the same layer as the first lead-out portion, and the height of the first connecting line is the same as that of the second connecting line.

2. The magnetoresistive device of claim 1, wherein The number of the inductor coils is plural, and the orthographic projection of the plural inductor coils on the substrate surrounds the orthographic projection of the magnetic functional layer on the substrate. The number of the first traces is plural, and the first traces are distributed along a first direction; the extension direction of the first traces intersects the first direction; 3. The magnetoresistive device of claim 2, wherein, The number of the second traces is plural, and the second traces are distributed along the first direction; the extension direction of the second traces intersects the first direction and the extension direction of the first traces; For any second trace, the orthographic projection of one end of the second trace on the substrate and the orthographic projection of one end of one of the two adjacent first traces on the substrate are overlapped, and the orthographic projection of the other end of the second trace on the substrate and the orthographic projection of the other end of the other of the two adjacent first traces on the substrate are overlapped; In the first direction, the magnetic functional layer is arranged on one side of the inductor coil.

4. The magnetoresistive device of claim 3, wherein The number of the inductor coils is two, and in the first direction, the two inductor coils are arranged on the two sides of the magnetic functional layer. The application relates to a magnetic response device, comprising: providing a substrate; forming a first insulating layer on one side of the substrate; sequentially forming a first conductive layer, a magnetic functional material layer and a second conductive layer on the first insulating layer in the direction away from the substrate; and patterning the second conductive layer and the magnetic functional material layer to form a second electrode and a magnetic functional layer; the orthographic projection of the magnetic functional layer on the substrate and the orthographic projection of the second electrode on the substrate are partially overlapped. ​ 5. The magnetoresistive device of claim 4, wherein, ​ 6. The magnetoresistive device of claim 1, wherein, ​ 7. A magnetoresistive device according to claim 1 or 6, characterised in that ​ ​ ​ ​ 8. The magnetoresistive device of claim 7, wherein, ​ 9. A method of making a magnetoresistive device, comprising: ​ ​ ​ ​ ​ patterning the first conductive layer to form a first electrode and a plurality of first traces; a normal projection of the magnetic functional layer on the substrate overlaps with a normal projection of the first electrode on the substrate; forming a second insulating layer covering the first electrode and the plurality of first traces, an upper surface of the second insulating layer is flush with an upper surface of the second electrode; forming a plurality of first openings and second openings on the second insulating layer, the second openings expose the first electrode, each of the first openings exposes an end portion of one of the first traces; forming first connecting lines in the first openings and second connecting lines in the second openings; forming a third conductive layer covering the second insulating layer; patterning the third conductive layer to form a first lead-out portion, a second lead-out portion and a plurality of second traces, the first lead-out portion is disposed on a side of the second electrode away from the substrate, the second lead-out portion covers the second connecting lines, two ends of the second traces are connected to two of the first connecting lines respectively.

10. An electronic device, comprising: A magnetic resistance device comprising any one of claims 1-8.

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