Composite film preparation device and preparation method thereof

Abstract

The embodiment of the invention provides a composite film preparation device and method, and the device comprises a reaction chamber which comprises an annular side wall, and a top and a bottom which are located at the two opposite ends of the annular side wall; the bearing device is located in the reaction chamber, and the top surface of the bearing device is used for bearing a substrate structure; the rotating device is located in the reaction chamber and fixedly connected with the bottom surface of the bearing device, and the rotating device can drive the bearing device to rotate relative to the reaction chamber; the isolation device is located in the reaction chamber and located on the side, away from the rotating device, of the two opposite sides of the bearing device; the isolation device divides the side area, away from the rotating device, of the bearing device into a plurality of independent deposition areas. Wherein different reaction sources are arranged in different deposition areas, and the rotating device is controlled to drive the substrate structure to rotate, so that multiple layers of alternately stacked composite films are deposited on the surface of the substrate structure.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor fabrication technology, and in particular to a composite thin film fabrication apparatus and method thereof. Background Technology

[0002] In practical applications, thin film preparation methods can include high-temperature chemical vapor deposition (HTCVD), liquid phase epitaxy, and physical vapor transport (PVT). Different preparation methods require different equipment. Therefore, the selection of the preparation equipment plays a crucial role in the quality and efficiency of the thin film preparation. Summary of the Invention

[0003] This disclosure provides a composite thin film preparation apparatus, comprising a reaction chamber with annular sidewalls and a top and bottom located at opposite ends of the annular sidewalls; a support device located within the reaction chamber, the top surface of which supports a substrate structure; a rotating device located within the reaction chamber and fixedly connected to the bottom surface of the support device, the rotating device capable of rotating the support device relative to the reaction chamber; and an isolation device located within the reaction chamber on one of the opposite sides of the support device, away from the rotating device; the isolation device divides the area of ​​the support device away from the rotating device into multiple independent deposition areas; wherein, by setting different reaction sources in different deposition areas and controlling the rotating device to rotate the substrate structure, multiple layers of alternately stacked composite thin films are deposited on the surface of the substrate structure.

[0004] In some embodiments, the line from the top center point to the bottom center point is defined as the central axis; the isolation device extends in a direction parallel to the annular sidewall and passes through the central axis in a direction perpendicular to the extension direction of the annular sidewall.

[0005] In some embodiments, the cross-sectional shape of the annular sidewall in the first plane includes a circle, and the cross-sectional shape of the isolation device in the first plane includes a plurality of sectors, wherein the vertices of the sectors are connected to the central axis; the first plane is perpendicular to the extending direction of the annular sidewall.

[0006] In some embodiments, the isolation device includes multiple isolation structures connected at the central axis; wherein, the more isolation structures there are, the more deposition regions there are, and the more types of films are alternately stacked in the composite film.

[0007] In some embodiments, the isolation device includes a first isolation structure and a second isolation structure, which divide the area of ​​the bearing device away from the rotating device into a first deposition area and a second deposition area that are independent of each other.

[0008] In some embodiments, the cross-sectional shape of the first deposition region in the first plane includes a first sector, and the cross-sectional shape of the second deposition region in the first plane includes a second sector; wherein the thickness of the film to be deposited in the first deposition region is controlled by adjusting the area of ​​the first sector; and / or the thickness of the film to be deposited in the second deposition region is controlled by adjusting the area of ​​the second sector.

[0009] In some embodiments, the apparatus further includes: a plurality of air intake devices, at least one of the air intake devices being disposed on the annular sidewall corresponding to each deposition region; the air intake devices being used to introduce reactive gas into the deposition region; and a plurality of exhaust devices, at least one of the exhaust devices being disposed at the bottom corresponding to each deposition region; the exhaust devices being used to exhaust residual gas within the deposition region.

[0010] In some embodiments, the plurality of air intake devices include a first air intake device and a second air intake device, the first air intake device being disposed on the annular sidewall corresponding to the first deposition region, and the second air intake device being disposed on the annular sidewall corresponding to the second deposition region; and the plurality of exhaust devices include a first exhaust device and a second exhaust device, the first exhaust device being disposed on the bottom corresponding to the first deposition region, and the second exhaust device being disposed on the bottom corresponding to the second deposition region; wherein a first reactive gas is introduced into the first deposition region through the first air intake device, and a second reactive gas is introduced into the second deposition region through the second air intake device, and the first reactive gas and the second reactive gas react respectively to form a composite film of alternating stacked first and second films on the surface of the substrate structure.

[0011] In some embodiments, the apparatus further includes: a plurality of reaction bodies, at least one of the reaction bodies being disposed in the region of the support device away from the rotating device corresponding to each deposition region, the reaction body being used to place the reaction source.

[0012] In some embodiments, the plurality of reactants includes a first reactant and a second reactant. The first reactant is disposed in a region of the support device away from the rotating device corresponding to the first deposition region, and the second reactant is disposed in a region of the support device away from the rotating device corresponding to the second deposition region. A first reactant material is placed in the first reactant, and a second reactant material is placed in the second reactant. Reactions occur based on the first reactant material and the second reactant material to form a composite film of alternating stacks of a third film and a fourth film on the surface of the substrate structure.

[0013] In some embodiments, the apparatus further includes: a plurality of excitation devices; at least one of the excitation devices is disposed at the top or bottom corresponding to each deposition region.

[0014] In some embodiments, the device further includes a power control device connected to the rotating device for controlling the opening and closing of the rotating device.

[0015] In some embodiments, the isolation device includes an isolation baffle extending in a direction parallel to the annular sidewall, and a gas isolation barrier located on at least one side of the isolation baffle.

[0016] In some embodiments, the isolation device further includes a tube extending in a direction parallel to the annular sidewall and through the isolation baffle, wherein the isolation gas is introduced into one end of the tube and flows out of the other end to form the gas isolation barrier on at least one side of the isolation baffle.

[0017] In some embodiments, the direction of air intake of the isolation gas is different from the direction of air exhaust.

[0018] This disclosure also provides a method for preparing a composite film, wherein the composite film is prepared using the composite film preparation apparatus described in the above embodiments of this disclosure; the preparation method includes: providing a substrate structure and placing the substrate structure on the top surface of a support device; and depositing multiple layers of alternately stacked composite films on the surface of the substrate structure by setting different reaction sources in different deposition regions and controlling the rotation device to drive the substrate structure to rotate.

[0019] In some embodiments, the isolation device is configured to include a first isolation structure and a second isolation structure, the first isolation structure and the second isolation structure being connected at a central axis pointing from the top center point to the bottom center point of the preparation device; the preparation method further includes: dividing the side of the support device away from the rotating device into a first deposition region and a second deposition region by means of the first isolation structure and the second isolation structure.

[0020] In some embodiments, a power control device is disposed in the fabrication apparatus and connected to the rotating device; the fabrication method further includes: controlling the opening and closing of the rotating device through the power control device to control the rotation of the substrate structure within the first deposition region and the second deposition region.

[0021] In some embodiments, a first air intake device is disposed on the annular sidewall of the preparation device corresponding to the first deposition region, and a second air intake device is disposed on the annular sidewall corresponding to the second deposition region; and a first exhaust device is disposed at the bottom of the preparation device corresponding to the first deposition region, and a second exhaust device is disposed at the bottom corresponding to the second deposition region; the preparation method further includes: introducing a first reaction gas into the first deposition region through the first air intake device, and introducing a second reaction gas into the second deposition region through the second air intake device.

[0022] In some embodiments, a first excitation device is disposed at the top or bottom corresponding to the first deposition region; a second excitation device is disposed at the top or bottom corresponding to the second deposition region; the preparation method further includes: turning on the first excitation device, turning on the rotation device and determining the start and end positions of the substrate structure, forming a first thin film on the surface of the substrate structure after the substrate structure has completely passed through the first deposition region; and turning on the second excitation device and the rotation device, forming a second thin film on the surface of the first thin film after the substrate structure has completely passed through the second deposition region.

[0023] In some embodiments, the preparation method further includes: after the substrate structure has completely passed through the first deposition region again, forming the first film again on the surface of the second film; after the substrate structure has completely passed through the second deposition region again, forming the second film again on the surface of the re-formed first film; repeating the above method to form a composite film of alternating stacks of the first film and the second film on the surface of the substrate structure.

[0024] In some embodiments, the preparation method further includes: stopping the introduction of the first reaction gas and the second reaction gas and maintaining this for a preset time; and turning off the first excitation device, the second excitation device, and the rotating device.

[0025] In some embodiments, both the first isolation structure and the second isolation structure are configured to include an isolation baffle extending in a direction parallel to the annular sidewall, and a pipe extending in a direction parallel to the annular sidewall and penetrating the isolation baffle; the preparation method further includes: forming a gas isolation barrier on at least one side of the isolation baffle by introducing isolation gas into one end of the pipe and letting the isolation gas flow out from the other end; wherein the isolation baffle and the gas isolation barrier are used to isolate the gas in the first deposition region and the gas in the second deposition region.

[0026] In some embodiments, the direction of air intake of the isolation gas is different from the direction of air exhaust.

[0027] In some embodiments, the ionization energy of the isolation gas is higher than that of the first reactant gas and the second reactant gas.

[0028] In some embodiments, the isolation gas includes at least one of inert gases.

[0029] In some embodiments, a first reactant is disposed in the region of the support device away from the rotating device corresponding to the first deposition region, and a second reactant is disposed in the region of the support device away from the rotating device corresponding to the second deposition region; a first reactant material is placed in the first reactant, and a second reactant material is placed in the second reactant; a third excitation device is disposed at the top or bottom corresponding to the first deposition region; and a fourth excitation device is disposed at the top or bottom corresponding to the second deposition region; the preparation method further includes: turning on the third excitation device, turning on the rotating device and determining the start and end positions of the substrate structure, using the third excitation device to excite the first reactant material to react, and forming a third film on the surface of the substrate structure after the substrate structure has completely passed through the first deposition region; and turning on the fourth excitation device and the rotating device, using the fourth excitation device to excite the second reactant material to react, and forming a fourth film on the surface of the third film after the substrate structure has completely passed through the second deposition region.

[0030] In some embodiments, the preparation method further includes: after the substrate structure has completely passed through the first deposition region again, forming the third film again on the surface of the fourth film; after the substrate structure has completely passed through the second deposition region again, forming the fourth film again on the surface of the newly formed third film; repeating the above method to form a composite film on the surface of the substrate structure in which the third film and the fourth film are alternately stacked.

[0031] In this embodiment, by setting an isolation device within the reaction chamber, the area of ​​the support device away from the rotating device is divided into multiple independent deposition areas. Different reaction sources are set in different deposition areas, and the rotating device is controlled to drive the substrate structure to rotate, thereby depositing multiple layers of alternately stacked composite films on the surface of the substrate structure. In this way, multiple preparation processes can be carried out continuously and without gaps during the formation of the composite film, eliminating the need for repeated preparation and post-processing steps, greatly shortening the preparation time and improving equipment utilization efficiency. It also allows for efficient use of raw materials for film production, reducing the amount of raw materials used and lowering manufacturing costs. Furthermore, it improves the uniformity of film thickness. In addition, the structure of the equipment / device is simple and suitable for large-scale promotion. Attached Figure Description

[0032] Figure 1 This is a cross-sectional schematic diagram of a composite thin film preparation apparatus provided in an embodiment of the present disclosure; Figure 2 for Figure 1 The diagram shows a cross-sectional view of the composite thin film preparation apparatus along line AA'. Figure 3 This is a partially enlarged schematic diagram of an isolation device provided in an embodiment of the present disclosure; Figure 4 for Figure 1 The diagram shown is a schematic representation of the composite thin film preparation apparatus along the BB' section. Figure 5 This disclosure provides a schematic diagram of an excitation device in different deposition areas according to an embodiment.

[0033] In the above figures (which are not necessarily drawn to scale), similar reference numerals may describe similar parts in different views. Similar reference numerals with different letter suffixes may indicate different examples of similar parts. The figures illustrate, by way of example and not limitation, the various embodiments discussed herein. Detailed Implementation

[0034] The technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this disclosure, and not all of them. Based on the embodiments in this disclosure, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this disclosure.

[0035] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of this disclosure. However, it will be apparent to those skilled in the art that this disclosure may be practiced without one or more of these details. In other instances, to avoid confusion with this disclosure, certain technical features well-known in the art have not been described; that is, not all features of actual embodiments are described herein, nor are well-known functions and structures described in detail.

[0036] In the accompanying drawings, for clarity, the dimensions of layers, areas, and elements, as well as their relative dimensions, may be exaggerated. The same reference numerals denote the same elements throughout.

[0037] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this disclosure, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion. And the discussion of a second element, component, area, layer, or portion does not imply that the first element, component, area, layer, or portion necessarily exists in this disclosure.

[0038] Spatial relation terms such as “below,” “under,” “below,” “below,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below” or “below” other elements or features will be oriented “above” other elements or features. Therefore, the exemplary terms “below” and “under” can include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0039] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit this disclosure. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprise” and / or “comprising,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0040] To fully understand this disclosure, detailed steps and structures will be presented in the following description to illustrate the technical solutions of this disclosure. Preferred embodiments of this disclosure are described in detail below; however, other embodiments may also be implemented in addition to these detailed descriptions.

[0041] In the manufacturing process of integrated circuit wafers, there are situations where two or more different thin films are stacked and deposited alternately, ranging from dozens to hundreds of alternating deposition cycles. Related technologies typically involve repeating single-layer thin film deposition processes to obtain the required number of composite thin films. For example, in the fabrication of 3D NAND flash memory, multiple alternating depositions of silicon nitride and silicon oxide films are required. In some large-size channel filling processes, alternating depositions of compressive and tensile stress silicon oxide films are used to prevent excessive film stress.

[0042] In the aforementioned deposition methods, multiple steps are required to operate the process chamber (reaction chamber) when depositing different thin films. For example, a single thin film growth cycle mainly includes a reaction chamber pretreatment step (such as emptying), a thin film deposition step, a post-treatment step, and a second emptying of the chamber. Such complex operation steps mean that the most critical deposition step only accounts for a small part of the entire cycle, resulting in problems such as long process time, low efficiency, cumbersome process, and low effective utilization of raw materials.

[0043] Based on one or more of the above-mentioned problems, this disclosure provides a composite thin film preparation apparatus. The composite thin film preparation apparatus includes: a reaction chamber, including annular sidewalls and a top and bottom located at opposite ends of the annular sidewalls; a support device located within the reaction chamber, the top surface of which supports a substrate structure; a rotating device located within the reaction chamber and fixedly connected to the bottom surface of the support device, the rotating device capable of driving the support device to rotate relative to the reaction chamber; and an isolation device located within the reaction chamber, on one of the opposite sides of the support device away from the rotating device; the isolation device divides the area of ​​the support device away from the rotating device into multiple independent deposition areas; wherein, by setting different reaction sources in different deposition areas and controlling the rotating device to drive the substrate structure to rotate, multiple layers of alternately stacked composite thin films are deposited on the surface of the substrate structure.

[0044] Thus, by setting up an isolation device within the reaction chamber, the area of ​​the support device away from the rotating device is divided into multiple independent deposition zones. Different reaction sources are placed in different deposition zones, and the rotating device is controlled to drive the substrate structure to rotate, thereby depositing multiple layers of alternately stacked composite films on the surface of the substrate structure. This allows multiple preparation processes to operate continuously and without gaps during the formation of the composite film, eliminating the need for repeated preparation and post-processing steps, significantly shortening preparation time and improving equipment utilization efficiency. It also allows for efficient use of raw materials for film production, reducing material consumption and lowering manufacturing costs. Furthermore, it improves the uniformity of film thickness. In addition, the device has a simple structure, making it suitable for large-scale deployment.

[0045] To make the above-mentioned objects, features and advantages of this disclosure more apparent and understandable, specific embodiments of this disclosure will be described in detail below with reference to the accompanying drawings.

[0046] refer to Figure 1 , Figure 1 This is a schematic cross-sectional view of a composite thin film preparation apparatus 100 provided in an embodiment of the present disclosure. The composite thin film preparation apparatus 100 includes a reaction chamber 101, which includes an annular sidewall 1012 and a top 1014 and a bottom 1016 located at opposite ends of the annular sidewall 1012. The positions of the top 1014 and the bottom 1016 can be interchanged.

[0047] In some embodiments, the annular sidewall 1012 can be a circular columnar structure, meaning the cross-sectional shape of the annular sidewall 1012 in the first plane includes a circle, and the first plane is a plane perpendicular to the extending direction of the annular sidewall. This facilitates a uniform distribution of the thermal field within the reaction chamber, avoiding the problem of overheating / overcooling at the corners of a square cavity that could cause uneven film quality, thereby improving the uniformity and reliability of the film. In other embodiments, the annular sidewall 1012 can also be other shapes, which are not limited herein.

[0048] In some embodiments, the annular sidewall 1012 has openings at opposite ends, with the top 1014 located at one opening of the annular sidewall 1012 and the bottom 1016 located at the other opening of the annular sidewall 1012. The annular sidewall 1012, the top 1014, and the bottom 1016 can form a reaction chamber, which can be a sealed cavity during use. The materials of the annular sidewall 1012, the top 1014, and the bottom 1016 can all be any suitable material such as quartz, graphite, ceramics (e.g., alumina (Al2O3), aluminum nitride (AlN), silicon carbide (SiC)), nickel-based alloys, and combinations thereof, so that the reaction chamber 101 can meet the requirements of high vacuum, high temperature resistance, and corrosion resistance.

[0049] It should be noted that the top 1014 and the annular sidewall 1012, as well as the bottom 1016 and the annular sidewall 1012, can be configured as closed coupling or as dynamic coupling. The specific choice can be set according to actual needs, and this disclosure does not limit it.

[0050] In some embodiments, the top 1014 and the annular sidewall 1012 can be coupled via a dynamic interface; the bottom 1016 and the annular sidewall 1012 are sealed together. Alternatively, in some embodiments, the bottom 1016 and the annular sidewall 1012 can be coupled via a dynamic interface; the top 1014 and the annular sidewall 1012 are sealed together. Thus, one end of the reaction chamber is statically closed, improving the chamber's airtightness; the other end is dynamically open and coupled, facilitating the removal or insertion of devices or membranes within the reaction chamber.

[0051] In some specific embodiments, the top 1014 and the annular sidewall 1012 are coupled via a dynamic interface; the bottom 1016 and the annular sidewall 1012 are also coupled via a dynamic interface. Thus, both ends of the reaction chamber are dynamically opened and coupled, which can improve process flexibility and adaptability to multiple scenarios; balance the environment within the reaction chamber and optimize reaction uniformity; and enhance equipment maintainability and scalability.

[0052] In some embodiments, reference Figure 1The composite thin film preparation apparatus 100 also includes a support device 102, which has two opposing surfaces, such as a top surface and a bottom surface, the positions of which can be interchanged. Here, the support device 102 is disposed inside the reaction chamber 101 and can be used to support the substrate structure 200, substrate, wafer, etc. For example, the substrate structure 200 is placed on the top surface of the support device 102. In some specific embodiments, the shape of the support device 102 can be selected according to actual needs; for example, the shape of the support device 102 is annular, cylindrical, etc. The material of the support device 102 can be any suitable material such as quartz, graphite, ceramics (e.g., alumina (Al2O3), aluminum nitride (AlN), silicon carbide (SiC)), nickel-based alloys, and combinations thereof, to meet requirements such as high vacuum, high temperature resistance, and corrosion resistance.

[0053] It should be noted that the substrate structure 200 here can be used as a deposition substrate for the composite thin film. It can be placed on the top surface of the support device before the composite thin film is formed, and removed outside the reaction chamber after the composite thin film is formed. The shape of the substrate structure 200 can be any suitable shape; for example, the shape of the substrate structure 200 is circular. The material of the substrate structure 200 can be selected according to the material of the composite thin film. For example, when the composite thin film includes a silicon nitride thin film and a silicon oxide thin film, the material of the substrate structure 200 can be at least one of semiconductor materials such as silicon (Si), germanium (Ge), and silicon germanide (SiGe).

[0054] In some embodiments, reference Figure 1 The composite thin film preparation apparatus 100 also includes a rotating device 103. The rotating device 103 is disposed inside the reaction chamber 101 and on one side of the support device 102 that differs from the substrate structure, such as on the bottom surface of the support device 102. The rotating device 103 is fixedly connected to the bottom surface of the support device 102. The rotating device 103 can be driven to rotate the support device 102 relative to the reaction chamber 101 by the action / control of an external motor (such as the power control device described later). Thus, the rotation of the support device 102 can drive the substrate structure 200 to rotate relative to the reaction chamber 101, such as clockwise or counterclockwise.

[0055] It should be noted that the shape of the rotating device 103 can be selected and set according to actual needs; in some embodiments, the rotating device 103 can be a circular cylindrical structure. In other embodiments, the rotating device 103 can also be any other suitable shape, and this disclosure does not limit it. The material of the rotating device 103 can be any suitable material such as quartz, graphite, ceramics (such as alumina (Al2O3), aluminum nitride (AlN), silicon carbide (SiC)), nickel-based alloys and combinations thereof, so as to meet the requirements of high vacuum, high temperature resistance, corrosion resistance and other requirements.

[0056] In some embodiments, reference Figure 1 The composite thin film preparation apparatus 100 also includes an isolation device 104 disposed within the reaction chamber. Here, the isolation device 104 extends parallel to the annular sidewall 1012 and is used to divide the area of ​​the support device 102 away from the rotating device 103 into multiple independent deposition regions. It should be understood that the multiple independent deposition regions can perform deposition operations independently of each other; that is, different deposition operations can be used to form different thin films. Furthermore, it can be understood that multiple independent deposition regions can simultaneously perform different deposition operations. In other words, by setting more deposition regions, the cyclical alternation of deposition of more types of thin films can be achieved.

[0057] In some embodiments, the material of the isolation device 104 can be any suitable material such as quartz, graphite, ceramics (e.g., alumina (Al2O3), aluminum nitride (AlN), silicon carbide (SiC)), nickel-based alloys, and combinations thereof, to meet requirements such as high vacuum, high temperature resistance, and corrosion resistance. The shape of the isolation device 104 can be selected according to requirements, for example, based on the shape and thickness of the film to be formed.

[0058] In some embodiments, a line pointing from the top center point to the bottom center point is defined as the central axis; the isolation device extends parallel to the annular sidewall and passes through the central axis in a direction perpendicular to the extension direction of the annular sidewall. In some embodiments, the cross-sectional shape of the isolation device in the first plane includes multiple sectors, with the vertices of the sectors connected to the central axis. Thus, multiple deposition areas can be isolated from the central axis by the isolation device, and further, when depositing a thin film on the substrate structure, the thin film can cover the entire surface of the substrate structure.

[0059] In some embodiments, the isolation device includes multiple isolation structures connected at a central axis. The more isolation structures there are, the more deposition regions there are, and the more types of films can be alternately stacked in the composite film. Thus, on the one hand, the area of ​​the support device away from the rotating device can be divided into multiple independent deposition regions by multiple isolation structures. The more isolation structures there are, the more independent deposition regions there are, and further, different films can be formed in different deposition regions, resulting in a greater variety of films included in the composite film. On the other hand, multiple isolation structures can divide multiple deposition regions into areas of different sizes to accommodate different thicknesses of the deposited films; in other words, the thickness of different films can be adjusted and controlled by adjusting the area ratio of each deposition region.

[0060] In some embodiments, the isolation device includes a first isolation structure and a second isolation structure, which separate the area of ​​the bearing device away from the rotating device into a first deposition area and a second deposition area that are independent of each other.

[0061] For example, refer to Figure 2 , Figure 2 for Figure 1 The diagram shows a cross-sectional view of the composite thin film fabrication apparatus along line AA'. The isolation device 104 includes a first isolation structure 1041 and a second isolation structure 1042. Both the first isolation structure 1041 and the second isolation structure 1042 have a fan-shaped cross-section on the first plane. The first isolation structure 1041 and the second isolation structure 1042 are connected at the central axis L, used to divide the area of ​​the support device away from the rotating device into two independent first deposition region 201 and second deposition region 202. Thus, different thin films can be formed in the first deposition region 201 and the second deposition region 202 respectively, so that the composite thin film includes two alternately stacked thin films.

[0062] It should be understood that when the isolation device includes three isolation structures, the area of ​​the carrier device away from the rotating device can be divided into three independent deposition areas. Therefore, the composite film can include three types of films stacked alternately in sequence. In other embodiments, the isolation device may also include 4, 5, 6…N isolation structures, and the composite film may include 4, 5, 6…N types of films stacked alternately in sequence; this disclosure does not limit this.

[0063] Continue to refer to Figure 2The first deposition region 201 has a cross-sectional shape of a first sector on the first plane, and the second deposition region has a cross-sectional shape of a second sector on the first plane. With other parameters remaining constant, the thickness of the film to be deposited in the first deposition region 201 can be controlled by adjusting the area of ​​the first sector; and / or, the thickness of the film to be deposited in the second deposition region 202 can be controlled by adjusting the area of ​​the second sector. Furthermore, the thickness ratio of the two films can be adjusted and controlled by adjusting the area ratio of the first sector and the second sector.

[0064] It should be noted that, on the one hand, the film thickness is also related to the rotation speed of the rotating device 103, and the two are inversely proportional; specifically, with other parameters remaining constant, the faster the rotation speed of the rotating device 103, the thinner the film thickness. On the other hand, the film thickness is also related to the reaction rate (deposition rate) within the deposition region, and the two are directly proportional; specifically, with other parameters remaining constant, the faster the reaction rate (deposition rate) within the deposition region, the thicker the film. It should be understood that the film thickness may also be related to other parameters, which are not specifically limited in this disclosure.

[0065] In some embodiments, the isolation device may include an isolation baffle extending in a direction parallel to the annular sidewall, and a gas isolation barrier located on at least one side of the isolation baffle. In some specific embodiments, the isolation device includes a tube extending in a direction parallel to the annular sidewall and passing through the isolation baffle, wherein an isolation gas is introduced into one end of the tube and flows out of the other end to form a gas isolation barrier on at least one side of the isolation baffle.

[0066] For example, refer to Figure 3 , Figure 3This is an enlarged schematic diagram of a portion (such as the first isolation structure) of the isolation device 104. The isolation device 104 includes an isolation baffle 1043 and a pipe 1044, both extending parallel to the annular sidewall, with the pipe 1044 passing through the isolation baffle 1043. In actual operation, isolation gas is introduced into one end of the pipe 1044 and flows out at the other end, forming a gas isolation barrier 1045. That is, in this embodiment, the isolation of each deposition area is achieved through the combination of the isolation baffle 1043 and the gas isolation barrier 1045. It should be noted that the isolation baffle 1043 can act as a rigid barrier, while the gas isolation barrier 1045 can act as a flexible barrier. The isolation baffle 1043 undertakes the main isolation task, while the gas isolation barrier 1045 handles the small-size diffusion and flow around problems that the baffle cannot solve. The synergistic combination of the two can achieve higher precision area isolation. It should be understood that the overall size and shape of the isolation device can be controlled by controlling the size of the isolation baffle 1043 and / or the gas isolation barrier 1045, thereby controlling the area of ​​the deposition region and achieving the purpose of controlling the film thickness.

[0067] In this embodiment, the isolation gas can flow out at different locations within the pipe hole as needed; that is, the specific locations of the other end of the pipe hole and the gas isolation barrier 1045 can be selected and set as required. In some specific embodiments, the other end of the pipe hole can be the end opposite to "one end of the pipe hole" in the pipe hole extension direction (e.g., Figure 3 The first position shown in the figure can also be one end of the isolation device located near the side wall of the reaction chamber (e.g., Figure 3 The second position shown in the figure can also be one end of the isolation device located on the side adjacent to the deposition area (e.g., Figure 3 The purpose of the third position shown in the figure is to separate adjacent sedimentary areas.

[0068] In some specific embodiments, the inlet and outlet directions of the isolation gas are different; that is, the position of the gas isolation barrier 1045 is different from the position of the inlet end of the pipe. It should be understood that the isolation device is provided with multiple ports connected to the pipe, and different ports can be used to input or output isolation gas. In other words, the position of the port determines the inlet and outlet directions of the isolation gas. Based on this, in this embodiment, the port connecting to the inlet end of the pipe and the port connecting to the outlet end of the pipe can be set in different directions so that the inlet and outlet directions of the isolation gas are different. This allows for flexible control of the airflow field of the isolation gas and improves the reliability of the isolation device.

[0069] In some embodiments, when the port of the connecting pipe exhaust end is located on the side of the isolation device adjacent to the deposition area (e.g.) Figure 3As shown in the third position, the size and shape of the gas isolation barrier 1045 can be controlled by adjusting parameters such as the discharge flow rate (or velocity), airflow angle, and airflow pressure of the isolation gas, thereby controlling the overall size of the isolation device and the area of ​​the deposition region. This allows for control of the film thickness. In other embodiments, the size and shape of the gas isolation barrier 1045 can also be controlled by changing the properties of the isolation gas itself (such as gas density, viscosity, or temperature), the shape and size of the ports, the arrangement of the ports, and the orientation of the ports. This disclosure does not specifically limit these aspects.

[0070] In some embodiments, the composite thin film preparation apparatus 100 can be used to perform plasma chemical vapor deposition (PCVD), physical vapor deposition (PVD), and spray deposition. The difference lies in the fact that different deposition processes require different structures on the composite thin film preparation apparatus; for example, when performing PCVD, an air inlet device and an exhaust device are required; when performing PVD, a reactant is required; and when performing spray deposition, a reactant inlet device and a residue outlet device are required. The following description uses PCVD and PVD as examples; it should be understood that the following description of the scope of application of the composite thin film preparation apparatus is for illustrative purposes only and is not intended to limit the scope of this disclosure.

[0071] In some embodiments, when the composite thin film preparation apparatus is used to perform PCVD, refer to the reference. Figure 1 The composite thin film preparation apparatus further includes an air inlet device 105, wherein at least one air inlet device 105 is provided on the annular sidewall corresponding to each deposition region; the air inlet device 105 is used to introduce reactive gas, carrier gas, etc., into the deposition region. In some specific embodiments, multiple reactive gases can be introduced into the deposition region through different air inlet devices, or multiple reactive gases can be mixed and then introduced into the deposition region through the same air inlet device, or other methods. In some embodiments, the composite thin film preparation apparatus further includes an exhaust device ( Figure 1 (Not shown in the image) At least one exhaust device is provided at the bottom of each deposition area, which is used to exhaust residual gas in the deposition area.

[0072] In some specific embodiments, multiple air intake devices include a first air intake device and a second air intake device. The first air intake device is disposed on the annular sidewall corresponding to the first deposition region, and the second air intake device is disposed on the annular sidewall corresponding to the second deposition region. Additionally, multiple exhaust devices include a first exhaust device and a second exhaust device. The first exhaust device is disposed at the bottom corresponding to the first deposition region, and the second exhaust device is disposed at the bottom corresponding to the second deposition region. Thus, a first reactive gas can be introduced into the first deposition region through the first air intake device, and a second reactive gas can be introduced into the second deposition region through the second air intake device. Based on the reactions of the first and second reactive gases, a composite film of alternating stacked first and second films is formed on the surface of the substrate structure. After the reaction is complete, residual gas in the first deposition region is discharged to the outside of the reaction chamber through the first exhaust device, and residual gas in the second deposition region is discharged to the outside of the reaction chamber through the second exhaust device.

[0073] For example, the first air intake device and the second air intake device can be a nozzle, spray head, etc.

[0074] refer to Figure 4 , Figure 4 for Figure 1 The diagram shows a cross-sectional view of the composite thin film preparation apparatus along line BB'; wherein, the first reacting gas is the source gas 203 required for the thin film to be deposited in the first deposition region, and the second reacting gas is the source gas 204 required for the thin film to be deposited in the second deposition region.

[0075] It should be noted that when the composite thin film preparation apparatus is used to perform PCVD, the size and thickness of the isolation device must be large enough, and the isolation gas must be a non-ionizable gas. For example, the ionization energy of the isolation gas is higher than that of the reaction gas to prevent plasma penetration and to prevent the reaction gases (reaction sources) of the two deposition areas from mixing, which would affect the thin film deposition.

[0076] In some embodiments, when the composite thin film preparation apparatus is used to perform PVD, refer to the reference. Figure 1 The composite thin film preparation apparatus 100 further includes a reaction body 106. At least one reaction body 106 is disposed in the region of the support device corresponding to each deposition area away from the rotating device. The reaction body 106 is used to hold the reaction source, which is typically a solid. In some specific embodiments, different types of reaction sources can be placed in different reaction bodies; multiple reaction sources can also be mixed and placed in the same reaction body or other methods. In some embodiments, the composite thin film preparation apparatus further includes multiple residue discharge devices (…). Figure 1 (Not shown in the image) At least one residue discharge device is provided at the bottom of each deposition area, which is used to discharge residual material within the deposition area.

[0077] In some specific embodiments, multiple reactants include a first reactant and a second reactant. The first reactant is disposed in the region of the support device corresponding to the first deposition region, away from the rotating device, and the second reactant is disposed in the region of the support device corresponding to the second deposition region, away from the rotating device. Multiple residue removal devices include a first residue removal device and a second residue removal device. The first residue removal device is disposed at the bottom of the first deposition region, and the second residue removal device is disposed at the bottom of the second deposition region. A first reactive material is placed in the first reactant, and a second reactive material is placed in the second reactant. Reactions occur based on the first and second reactive materials to form a composite film of alternating stacked third and fourth films on the surface of the substrate structure. After the reaction is complete, the residual material in the first deposition region is discharged to the outside of the reaction chamber through the first residue removal device, and the residual material in the second deposition region is discharged to the outside of the reaction chamber through the second residue removal device.

[0078] refer to Figure 4 , Figure 4 for Figure 1 The schematic diagram of the composite thin film preparation apparatus along line BB' is shown; the first reaction material is the target material 205 required for the thin film to be deposited in the first deposition region, and the second reaction material is the target material 206 required for the thin film to be deposited in the second deposition region.

[0079] In some embodiments, the composite thin film preparation apparatus further includes an excitation device, with at least one excitation device disposed at the top or bottom of each deposition region, thereby enabling independent control of the excitation devices in different deposition regions. The excitation device is used to ionize the reaction source (such as a reaction gas or reaction material).

[0080] In some specific embodiments, reference is made to Figure 5 The excitation apparatus includes a first excitation device 1071 and a second excitation device 1072. The first excitation device 1071 is located in a first deposition region, and the second excitation device 1072 is located in a second deposition region. The first excitation device 1071 is used to excite a first reaction source 1081 (such as a first reaction gas or a first reaction material), causing the first reaction source 1081 to ionize and react, forming a thin film on the substrate structure 200. Similarly, the second excitation device 1072 is used to excite a second reaction source 1082 (such as a second reaction gas or a second reaction material), causing the second reaction source 1082 to ionize and react, forming a thin film on the substrate structure 200. It should be understood that, based on the rotation of the substrate structure 200 by the rotating device, the thin film formed by the first excitation device 1071 and the thin film formed by the second excitation device 1072 are alternately stacked on the substrate structure 200.

[0081] It should be noted that in the PCVD apparatus, the isolation gas used to form the gas barrier cannot be ionized by the excitation device. For example, the isolation gas is at least one of the inert gases, such as helium (He), whose ionization energy is 24.6 eV, corresponding to an excitation voltage of 190V~500V; or argon (Ar), whose ionization energy is 15.8 eV, corresponding to an excitation voltage of 400V~800V. In other words, the excitation voltage of the reaction source used to form the thin film should be lower than the excitation voltage of the isolation gas.

[0082] In some embodiments, the composite thin film preparation apparatus further includes a power control device connected to the rotating device, used to control the opening and closing of the rotating device. When the rotating device is opened, it begins to rotate, causing the support device and substrate structure to rotate; when the rotating device is closed, it stops rotating, and the support device and substrate structure also stop rotating.

[0083] Thus, in this embodiment of the present disclosure, by setting isolation baffles and gas isolation barriers in the composite thin film preparation device to isolate each deposition area, the area above the support device is divided into several fan-shaped areas. The specific number of fan-shaped areas can be determined according to the processing requirements. If two types of thin films need to be stacked and deposited alternately, it is necessary to divide it into two fan-shaped areas. Different reaction raw materials or target materials are introduced into each fan-shaped area to obtain different thin films. The size of each fan-shaped area can be determined according to the thickness ratio of the two thin films and the deposition rate.

[0084] Based on the aforementioned composite film preparation apparatus, this disclosure also proposes a method for preparing a composite film, wherein the composite film is prepared using the composite film preparation apparatus described in the above embodiments of this disclosure; wherein the method for preparing the composite film includes: providing a substrate structure and placing the substrate structure on the top surface of a support device; and depositing multiple layers of alternately stacked composite films on the surface of the substrate structure by setting different reaction sources in different deposition regions and controlling the rotation device to drive the substrate structure to rotate.

[0085] The specific steps for forming the composite film are described in detail below with reference to the accompanying drawings. Before preparing the composite film, a composite film preparation apparatus is required; see reference... Figure 1The composite thin film preparation apparatus 100 includes a reaction chamber 101, which includes an annular sidewall 1012 and a top 1014 and a bottom 1016 located at opposite ends of the annular sidewall; a support device 102 located inside the reaction chamber 101, the top surface of which supports the substrate structure 200; a rotating device 103 located inside the reaction chamber 101 and fixedly connected to the bottom surface of the support device 102, which can drive the support device 102 to rotate relative to the reaction chamber 101; and an isolation device 104 located inside the reaction chamber 101 and on the side of the support device 102 away from the rotating device 103 on opposite sides; the isolation device 104 divides the area of ​​the support device 102 away from the rotating device 103 into multiple independent deposition areas.

[0086] In some embodiments, reference Figure 2 The isolation device 104 is configured to include a first isolation structure 1041 and a second isolation structure 1042, which are connected at the central axis from the top center point to the bottom center point of the composite film preparation device. The preparation method further includes dividing the area of ​​the support device 102 away from the rotating device 103 into a first deposition region 201 and a second deposition region 202 by the first isolation structure 1041 and the second isolation structure 1042.

[0087] In some embodiments, a power control device is disposed in the composite thin film preparation apparatus and connected to the rotating device 103; the preparation method further includes: controlling the opening and closing of the rotating device through the power control device to control the substrate structure 200 to rotate within the first deposition region 201 and the second deposition region 202.

[0088] In some embodiments, such as during the preparation of composite thin films using plasma chemical vapor deposition (PCVD), the first gas inlet device ( Figure 1 (Not shown) is installed on the annular sidewall of the composite film preparation apparatus corresponding to the first deposition region 201, and the second air inlet device ( Figure 1 (Not shown) is disposed on the annular sidewall of the composite film preparation apparatus corresponding to the second deposition region 202; and the first exhaust device ( Figure 1 (Not shown in the image) is installed at the bottom of the composite film preparation apparatus corresponding to the first deposition region 201, and the second exhaust device ( Figure 1(Not shown) is disposed at the bottom of the composite film preparation apparatus corresponding to the second deposition region 202; the preparation method further includes: introducing a first reaction gas into the first deposition region 201 through a first gas inlet device, and introducing a second reaction gas into the second deposition region 202 through a second gas inlet device. At this time, the gas pressure in the first deposition region 201 and the second deposition region 202 remains basically consistent, so that the gas pressure in the entire reaction chamber reaches a stable state.

[0089] In some embodiments, a first excitation device is disposed at the top or bottom of the composite film preparation device corresponding to the first deposition region 201; a second excitation device is disposed at the top or bottom of the composite film preparation device corresponding to the second deposition region 202; the preparation method further includes: turning on the first excitation device, turning on the rotation device and determining the start and end positions of the substrate structure 200, forming a first film on the surface of the substrate structure 200 after the substrate structure 200 has completely passed through the first deposition region 201; and turning on the second excitation device and the rotation device, forming a second film on the surface of the first film after the substrate structure 200 has completely passed through the second deposition region.

[0090] In some embodiments, the preparation method further includes: after the substrate structure 200 has completely passed through the first deposition region 201 again, forming a first film again on the surface of the second film; and after the substrate structure 200 has completely passed through the second deposition region 202 again, forming a second film again on the surface of the newly formed first film. The above method is repeated to form a composite film with alternating stacked first and second films on the surface of the substrate structure 200.

[0091] In some embodiments, the preparation method further includes: stopping the introduction of the first reactant gas and the second reactant gas, and introducing a carrier gas into the first deposition region 201 and the second deposition region 202, and maintaining this for a preset time. Here, the reactant gas is used to form a thin film, and the carrier gas is used as a protective gas. In other embodiments, when the first reactant gas includes a main reactant gas and a secondary reactant gas, after the composite thin film is formed, the introduction of the main reactant gas is stopped, while the introduction of the secondary reactant gas is maintained. Here, the main reactant gas is used to form a thin film, and the secondary reactant gas is used as a protective gas.

[0092] In some embodiments, the preparation method further includes: after stopping the introduction of the reaction gas for a period of time, turning off the first excitation device, the second excitation device, and the rotating device.

[0093] In some embodiments, both the first isolation structure and the second isolation structure are configured to include an isolation baffle extending in a direction parallel to the annular sidewall, and a pipe hole penetrating the isolation baffle in a direction parallel to the annular sidewall; the preparation method further includes: forming a gas isolation barrier on at least one side of the isolation baffle by introducing isolation gas into one end of the pipe hole and letting isolation gas flow out from the other end; wherein the isolation baffle and the gas isolation barrier are used to isolate the gas in the first deposition region 201 and the gas in the second deposition region 202.

[0094] In some embodiments, the direction of air intake for the isolation gas is different from the direction of air exhaust.

[0095] In some embodiments, the ionization energy of the isolation gas is higher than that of the first reactant gas and the second reactant gas.

[0096] In some embodiments, the isolation gas includes at least one of the inert gases.

[0097] In some embodiments, the method further includes: removing the substrate structure 200 outside the reaction chamber and removing the substrate structure 200, thereby forming a final composite film with alternating stacks of the first and second films. It should be understood that the number of the first and second films in the composite film can be set as needed.

[0098] It should be noted that the preparation of composite thin films using plasma-enhanced chemical vapor deposition (PCVD) involves a pretreatment stage, a deposition stage, and a post-treatment stage. The pretreatment stage includes: introducing a carrier gas or cleaning gas into the reaction chamber to clean the chamber, and raising the temperature within the chamber to the temperature required for the reaction. The deposition stage includes: introducing a reactive gas into the reaction chamber, then ionizing the reactive gas with plasma to induce a chemical reaction, thereby forming a thin film on the surface of the substrate structure 200. The byproducts of the reaction are discharged in gaseous form. The post-treatment stage includes: removing residual byproducts and cleaning the reaction chamber. The pretreatment and post-treatment stages may also include other operations, which are not specifically limited in this disclosure.

[0099] In some embodiments, during the preparation of the composite thin film using physical vapor deposition (PVD), the first reactant ( Figure 1 (Not shown in the image) is placed in the region on the side of the support device away from the rotating device corresponding to the first deposition region 201, and the second reactant ( Figure 1The preparation method further includes: setting the support device (not shown) in the region away from the rotating device on the side of the second deposition region 202; placing a first reaction material in the first reaction body and a second reaction material in the second reaction body; setting a third excitation device at the top or bottom of the composite film preparation device corresponding to the first deposition region 201; setting a fourth excitation device at the top or bottom of the composite film preparation device corresponding to the second deposition region 202; the preparation method further includes: turning on the third excitation device, turning on the rotating device and determining the start and end positions of the substrate structure 200, using the third excitation device to excite the first reaction material to react, and forming a third film on the surface of the substrate structure 200 after the substrate structure 200 has completely passed through the first deposition region 201; and turning on the fourth excitation device and the rotating device, using the fourth excitation device to excite the second reaction material to react, and forming a fourth film on the surface of the third film after the substrate structure 200 has completely passed through the second deposition region 202.

[0100] In some embodiments, the preparation method further includes: after the substrate structure 200 has completely passed through the first deposition region 201 again, forming a third film again on the surface of the fourth film; and after the substrate structure 200 has completely passed through the second deposition region 202 again, forming a fourth film again on the surface of the newly formed third film. The above method is repeated to form a composite film with alternating stacks of the third and fourth films on the surface of the substrate structure 200.

[0101] In some embodiments, the method further includes: removing the substrate structure 200 outside the reaction chamber and removing the substrate structure 200, thereby forming a final composite film with alternating stacked third and fourth films. It should be understood that the number of third and fourth films in the composite film can be set as needed.

[0102] In this embodiment of the disclosure, the area above the carrier device (vehicle) can be divided into sections, and combined with the rotation of the carrier device, multiple films can be stacked alternately in a cyclic manner.

[0103] It should be understood that the phrase "an embodiment" or "one embodiment" throughout the specification means that a specific feature, structure, or characteristic related to the embodiment is included in at least one embodiment of this disclosure. Therefore, "in one embodiment" or "one embodiment" appearing throughout the specification does not necessarily refer to the same embodiment. Furthermore, these specific features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. It should be understood that in the various embodiments of this disclosure, the sequence numbers of the above-described processes do not imply a sequential order of execution; the execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this disclosure. The sequence numbers of the above-described embodiments are for descriptive purposes only and do not represent the superiority or inferiority of the embodiments.

[0104] The above description is merely a preferred embodiment of this disclosure and does not limit the patent scope of this disclosure. Any equivalent structural transformations made using the contents of this specification and drawings under the inventive concept of this disclosure, or direct / indirect applications in other related technical fields, are included within the patent protection scope of this disclosure.

Claims

1. A composite thin film preparation apparatus, characterized in that, The device includes: The reaction chamber includes annular sidewalls and a top and a bottom located at opposite ends of the annular sidewalls; A support device is located within the reaction chamber, and the top surface of the support device is used to support the base structure. A rotating device is located inside the reaction chamber and is fixedly connected to the bottom surface of the supporting device. The rotating device can drive the supporting device to rotate relative to the reaction chamber. An isolation device is located within the reaction chamber and on one side of the support device that is furthest from the rotating device; the isolation device divides the area of ​​the support device furthest from the rotating device into multiple independent deposition areas; In this process, different reaction sources are set in different deposition regions, and the substrate structure is rotated by controlling the rotating device to deposit multiple layers of alternately stacked composite films on the surface of the substrate structure.

2. The apparatus according to claim 1, characterized in that, The line from the top center point to the bottom center point is defined as the central axis; the isolation device extends in a direction parallel to the annular sidewall and passes through the central axis in a direction perpendicular to the extension direction of the annular sidewall.

3. The apparatus according to claim 2, characterized in that, The annular sidewall has a circular cross-sectional shape in the first plane, and the isolation device has a plurality of sector shapes in the cross-sectional shape in the first plane, wherein the apex of the sector is connected to the central axis; the first plane is perpendicular to the extending direction of the annular sidewall.

4. The apparatus according to claim 3, characterized in that, The isolation device includes multiple isolation structures connected at the central axis; wherein, the more isolation structures there are, the more deposition regions there are, and the more types of films are alternately stacked in the composite film.

5. The apparatus according to claim 4, characterized in that, The isolation device includes a first isolation structure and a second isolation structure, which divide the area of ​​the bearing device away from the rotating device into a first deposition area and a second deposition area that are independent of each other.

6. The apparatus according to claim 5, characterized in that, The first deposition region has a cross-sectional shape in the first plane including a first sector, and the second deposition region has a cross-sectional shape in the first plane including a second sector; wherein the thickness of the film to be deposited in the first deposition region is controlled by adjusting the area of ​​the first sector; and / or the thickness of the film to be deposited in the second deposition region is controlled by adjusting the area of ​​the second sector.

7. The apparatus according to claim 5, characterized in that, The device further includes: Multiple air intake devices are provided, with at least one air intake device disposed on the annular sidewall corresponding to each deposition area; the air intake device is used to introduce reactive gas into the deposition area. Multiple exhaust devices are provided, with at least one exhaust device provided at the bottom corresponding to each of the deposition areas; the exhaust devices are used to discharge residual gas within the deposition area.

8. The apparatus according to claim 7, characterized in that, The plurality of air intake devices includes a first air intake device and a second air intake device, wherein the first air intake device is disposed on the annular sidewall corresponding to the first deposition area, and the second air intake device is disposed on the annular sidewall corresponding to the second deposition area; and... The plurality of exhaust devices includes a first exhaust device and a second exhaust device, wherein the first exhaust device is disposed at the bottom corresponding to the first deposition area, and the second exhaust device is disposed at the bottom corresponding to the second deposition area. In this process, a first reactive gas is introduced into the first deposition area through the first air intake device, and a second reactive gas is introduced into the second deposition area through the second air intake device. The first reactive gas and the second reactive gas react respectively to form a composite film on the surface of the substrate structure, in which a first film and a second film are alternately stacked.

9. The apparatus according to claim 5, characterized in that, The device further includes: Multiple reactants are provided, with at least one reactant disposed in the region of the support device away from the rotating device corresponding to each deposition area, and the reactant is used to place the reaction source.

10. The apparatus according to claim 9, characterized in that, The plurality of reactants include a first reactant and a second reactant. The first reactant is disposed in the region of the support device away from the rotating device corresponding to the first deposition region, and the second reactant is disposed in the region of the support device away from the rotating device corresponding to the second deposition region. In this process, a first reactive material is placed in the first reactive body, and a second reactive material is placed in the second reactive body. The first and second reactive materials react respectively to form a composite film on the surface of the substrate structure, in which a third and a fourth film are alternately stacked.

11. The apparatus according to claim 1, characterized in that, The device further includes: Multiple excitation devices; at least one of the excitation devices is provided at the top or bottom of each deposition region.

12. The apparatus according to claim 1, characterized in that, The device further includes: A power control device, connected to the rotating device, is used to control the opening and closing of the rotating device.

13. The apparatus according to claim 2, characterized in that, The isolation device includes an isolation baffle extending in a direction parallel to the annular sidewall, and a gas isolation barrier located on at least one side of the isolation baffle.

14. The apparatus according to claim 13, characterized in that, The isolation device further includes a pipe extending in a direction parallel to the annular sidewall and passing through the isolation baffle, wherein the isolation gas is introduced into one end of the pipe and flows out of the other end to form the gas isolation barrier on at least one side of the isolation baffle.

15. The apparatus according to claim 14, characterized in that, The direction of air intake for the isolation gas is different from the direction of air exhaust.

16. A method for preparing a composite thin film, characterized in that, The composite film is prepared using the composite film preparation apparatus according to any one of claims 1 to 15; The preparation method includes: providing a substrate structure and placing the substrate structure on the top surface of a support device; and depositing a multilayered, alternately stacked composite film on the surface of the substrate structure by setting different reaction sources in different deposition regions and driving the substrate structure to rotate by controlling a rotating device.

17. The preparation method according to claim 16, characterized in that, The isolation device is configured to include a first isolation structure and a second isolation structure, wherein the first isolation structure and the second isolation structure are connected at the central axis from the top center point to the bottom center point of the preparation device. The preparation method further includes: dividing the side of the support device away from the rotating device into a first deposition region and a second deposition region by means of the first isolation structure and the second isolation structure.

18. The preparation method according to claim 17, characterized in that, A power control device is installed in the preparation apparatus and connected to the rotating device. The preparation method further includes: controlling the opening and closing of the rotating device through the power control device to control the substrate structure to rotate within the first deposition region and the second deposition region.

19. The preparation method according to claim 18, characterized in that, The first air intake device is disposed on the annular sidewall of the preparation device corresponding to the first deposition area, and the second air intake device is disposed on the annular sidewall corresponding to the second deposition area; In addition, a first exhaust device is disposed at the bottom of the preparation device corresponding to the first deposition area, and a second exhaust device is disposed at the bottom corresponding to the second deposition area; The preparation method further includes: introducing a first reaction gas into the first deposition area through the first air intake device, and introducing a second reaction gas into the second deposition area through the second air intake device.

20. The preparation method according to claim 19, characterized in that, The first excitation device is placed at the top or bottom corresponding to the first deposition area; The second excitation device is placed at the top or bottom corresponding to the second deposition area; The preparation method further includes: turning on the first excitation device, turning on the rotation device and determining the start and end positions of the substrate structure, and forming a first thin film on the surface of the substrate structure after the substrate structure has completely passed through the first deposition area; as well as, The second excitation device and the rotating device are turned on, and after the substrate structure has completely passed through the second deposition area, a second film is formed on the surface of the first film.

21. The preparation method according to claim 20, characterized in that, The preparation method further includes: After the substrate structure has completely passed through the first deposition area again, the first film is formed again on the surface of the second film, and after the substrate structure has completely passed through the second deposition area again, the second film is formed again on the surface of the re-formed first film. Repeat the above method to form a composite film on the surface of the substrate structure in which the first film and the second film are stacked alternately.

22. The preparation method according to claim 21, characterized in that, The preparation method further includes: Stop the flow of the first and second reactant gases and maintain this for a preset time. The first excitation device, the second excitation device, and the rotating device are shut down.

23. The preparation method according to claim 22, characterized in that, Both the first isolation structure and the second isolation structure are configured to include an isolation baffle extending in a direction parallel to the annular sidewall, and a pipe hole extending in a direction parallel to the annular sidewall and penetrating the isolation baffle. The preparation method further includes: introducing isolation gas into one end of the tube and allowing the isolation gas to flow out from the other end to form a gas isolation barrier on at least one side of the isolation baffle; wherein the isolation baffle and the gas isolation barrier are used to isolate the gas in the first deposition region and the gas in the second deposition region.

24. The preparation method according to claim 23, characterized in that, The direction of air intake for the isolation gas is different from the direction of air exhaust.

25. The preparation method according to claim 23, characterized in that, The ionization energy of the isolation gas is higher than that of the first reactant gas and the second reactant gas.

26. The preparation method according to claim 23, characterized in that, The isolation gas includes at least one of the inert gases.

27. The preparation method according to claim 18, characterized in that, The first reactant is placed in the area of ​​the support device away from the rotating device corresponding to the first deposition area, and the second reactant is placed in the area of ​​the support device away from the rotating device corresponding to the second deposition area. In addition, a first reactive material is placed in the first reactive body, and a second reactive material is placed in the second reactive body; a third excitation device is disposed at the top or bottom corresponding to the first deposition region; The fourth excitation device is placed at the top or bottom corresponding to the second deposition region; The preparation method further includes: activating the third excitation device, activating the rotation device and determining the start and end positions of the substrate structure, using the third excitation device to excite the first reactive material to react, and forming a third thin film on the surface of the substrate structure after the substrate structure has completely passed through the first deposition area; and... The fourth excitation device and the rotating device are turned on, and the second reactive material is excited to react by the fourth excitation device. After the substrate structure has completely passed through the second deposition area, a fourth film is formed on the surface of the third film.

28. The preparation method according to claim 27, characterized in that, The preparation method further includes: After the substrate structure has completely passed through the first deposition area again, the third film is formed again on the surface of the fourth film. After the substrate structure has completely passed through the second deposition area again, the fourth film is formed again on the surface of the third film that has been formed again. Repeat the above method to form a composite film on the surface of the substrate structure by alternating stacking of the third film and the fourth film.

Images