A surface drying control method, device and equipment for wafer cleaning

Abstract

The application provides a surface drying control method, device and equipment for wafer cleaning, and belongs to the technical field of semiconductor manufacturing. The method comprises the following steps: in response to a jet start instruction issued based on a jet control parameter set, obtaining wafer surface multidimensional data within a preset time window when the jet hits the wafer surface; based on the wafer surface multidimensional data, determining whether there is a water stain to be dried on the wafer surface. If yes, determining the water stain thickness and positioning grid information of the water stain to be dried, matching a target nitrogen gas nozzle set and determining the corresponding target control parameter set; based on the real-time collected wafer corner information, positioning grid information and target nitrogen gas nozzle set, generating a corresponding nitrogen gas injection instruction to control the target nitrogen gas nozzle set to perform target nitrogen gas injection according to the target control parameter set; and according to the wafer surface multidimensional data after the target nitrogen gas injection is performed, determining a corresponding drying residue detection result to judge whether the surface drying is completed based on the drying residue detection result.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a surface drying control method, device and equipment for wafer cleaning. BACKGROUND

[0002] In the manufacturing process of a semiconductor integrated circuit chip, if the micron / nanometer level water stains remaining on the surface of a wafer after cleaning are not completely dried, it will cause serious problems such as subsequent photolithography pattern transfer error and cutting cracking. Especially with the upgrading of wafer size and the increasing requirements of the industry on production efficiency and stability, the defects of the traditional drying technology are becoming more and more prominent.

[0003] At present, for wafer drying, the existing mainstream nitrogen drying technology mostly uses fixed parameters for drying, which makes it difficult to completely dry the wafer surface based on the actual water stains, and the drying efficiency is low, and surface damage may occur in the area with little or no water stains due to excessive nitrogen blowing. Secondly, it is difficult to perform targeted drying treatment according to the water stain distribution on the wafer surface, which makes the intelligent level of wafer drying technology insufficient. SUMMARY

[0004] The embodiments of the present application provide a surface drying control method, device and equipment for wafer cleaning, to solve the technical problems that the existing nitrogen drying technology is not flexible, the drying efficiency is low, and the intelligent level is not high.

[0005] In a first aspect, the embodiments of the present application provide a surface drying control method for wafer cleaning, which is applied to a wafer spin-drying system. The method comprises:

[0006] determining a jet control parameter set of a preset water stain target monitoring module based on wafer specification information;

[0007] in response to a jet start instruction issued based on the jet control parameter set, acquiring multi-dimensional data of a wafer surface within a preset time window when a jet hits the wafer surface;

[0008] based on the multi-dimensional data of the wafer surface, determining whether there is a water stain to be dried on the wafer surface;

[0009] if yes, determining water stain thickness and positioning grid information of the water stain to be dried, to match a target nitrogen nozzle group and determine a corresponding target control parameter set thereof;

[0010] based on real-time collected wafer rotation angle information, the positioning grid information and the target nitrogen nozzle group, generating a corresponding nitrogen injection instruction to control the target nitrogen nozzle group to perform target nitrogen injection according to the target control parameter set. The nitrogen injection instruction carries a time stamp of the arrival of the water stain to be dried at the area covered by the target nitrogen nozzle group.

[0011] According to the wafer surface multi-dimensional data after the target nitrogen jet is executed, a corresponding baking residue detection result is determined, so as to judge whether the surface baking is completed based on the baking residue detection result.

[0012] In an implementation manner of the present application, jet control parameter groups of a preset water stain target monitoring module are determined based on wafer specification information, and specifically include:

[0013] According to the wafer specification information and preset reference specification information, a surface tension coefficient, a diameter coefficient and a hardness coefficient corresponding to the current wafer are determined;

[0014] According to the surface tension coefficient, the diameter coefficient and a single-pulse jet flow calculation formula, a single-pulse jet flow of the current wafer is calculated;

[0015] According to the hardness coefficient, a wafer rotation speed of the current wafer and preset unit detection point parameters, a pulse frequency corresponding to the current wafer is calculated; wherein the preset unit detection point parameters are determined based on a wafer diameter of the current wafer;

[0016] According to the reference pressure value of the current wafer, the diameter coefficient and the hardness coefficient, a corresponding jet pressure value is calculated;

[0017] According to the single-pulse jet flow, the pulse frequency and the jet pressure value, the jet control parameter groups corresponding to a multi-nozzle array of the preset water stain target monitoring module are determined.

[0018] In an implementation manner of the present application, wafer surface multi-dimensional data in a preset time window when a jet impacts a wafer surface is acquired, and specifically includes:

[0019] Taking a starting time point when the preset water stain target monitoring module executes the jet start instruction and sprays a jet as a starting time point, wafer surface scattering signals and wafer surface image data in the preset time window are collected in real time through a preset laser sensor array and a preset industrial camera array;

[0020] According to a timestamp alignment rule of the preset laser sensor array and the preset industrial camera array, the wafer surface scattering signals and the wafer surface image data are timestamped and aligned, so as to generate corresponding wafer surface multi-dimensional data after the timestamped and aligned data is preprocessed.

[0021] In an implementation manner of the present application, whether there is a wafer to be baked water stain on a wafer surface is determined based on the wafer surface multi-dimensional data, and specifically includes:

[0022] According to the wafer surface scattering signals and the pre-divided wafer grid areas, determine the scattering signal mean value corresponding to each wafer grid area respectively;

[0023] Match each scattering signal mean value with a preset water stain judgment standard interval respectively, to determine whether there is a pending water stain grid area according to the matching result;

[0024] If yes, perform segmentation processing on the image corresponding to the pending water stain grid area from the wafer surface image data, and input the segmented pending water stain grid area image into a pre-trained image recognition model;

[0025] According to the model output result, determine whether the pending water stain grid area image has the to-be-baked water stain.

[0026] In an implementation manner of the present application, the water stain thickness and positioning grid information of the to-be-baked water stain are determined to match the target nitrogen gas nozzle group, specifically including:

[0027] Compare the water stain grid area with a preset full-wafer water stain distribution thermal diagram to determine the target grid label of the to-be-baked water stain according to the comparison result, and obtain the wafer surface physical coordinates corresponding to the target grid label through a preset physical coordinate conversion formula as the positioning grid information; wherein the target grid label includes the radial annular partition sub-label and the circumferential sector partition sub-label of the target grid area corresponding to the to-be-baked water stain on the current wafer surface.

[0028] Based on the target grid label and a preset nitrogen gas nozzle correlation table, match the target nitrogen gas nozzle group corresponding to the target grid area; wherein the target nitrogen gas nozzle group at least includes one preset radial nozzle and one preset circumferential nozzle.

[0029] In an implementation manner of the present application, the corresponding target control parameter group is determined, specifically including:

[0030] Based on a preset water stain thickness mapping model and the scattering signal mean value corresponding to the water stain grid area of the to-be-baked water stain, determine the water stain thickness of the to-be-baked water stain, to calculate the radial injection pressure value of the radial nozzle according to the water stain thickness and a preset injection pressure calculation formula;

[0031] According to the radial injection pressure value, a preset injection flow calculation formula and a preset injection time length calculation formula, determine the radial flow value and the radial injection time length of the radial nozzle, and determine the corresponding radial injection angle according to the wafer diameter of the current wafer;

[0032] The radial jet pressure value, the radial flow value, the radial jet duration, the radial jet angle, and a preset circumferential nozzle control parameter corresponding to the current wafer are added to the target control parameter group.

[0033] In an implementation manner of the present application, based on the real-time collected wafer rotation angle information, the positioning grid information, and the target nitrogen gas nozzle group, a corresponding nitrogen gas jetting instruction is generated, specifically including:

[0034] According to the real-time collected wafer rotation angle information, a current absolute rotation angle value and a real-time rotation speed value of the current wafer are determined.

[0035] According to the positioning grid information, a target grid rotation angle value of a target grid area corresponding to the water stain to be dried is determined, so as to determine relative position information between the water stain to be dried and the target nitrogen gas nozzle group according to a difference between the current absolute rotation angle value and the target grid rotation angle value.

[0036] According to the relative position information and the real-time rotation speed value, the arrival timestamp is determined.

[0037] According to the arrival timestamp and the target control parameter group, the nitrogen gas jetting instruction is generated.

[0038] In an implementation manner of the present application, according to the multi-dimensional data of the wafer surface after the target nitrogen gas jetting is performed, a corresponding drying residue detection result is determined, specifically including:

[0039] After the target nitrogen gas jetting is performed, the multi-dimensional data of the wafer surface is acquired to determine a residual water stain thickness of a target grid area corresponding to the water stain to be dried.

[0040] According to the residual water stain thickness and a preset residual grade interval, a corresponding water stain drying residue grade is determined as the drying residue detection result.

[0041] The method further includes:

[0042] When the water stain drying residue grade is a first preset grade, a secondary nitrogen gas jetting instruction is generated.

[0043] When the water stain drying residue grade is a second preset grade, the target control parameter group is updated according to a preset parameter reinforcement strategy, and a corresponding nitrogen gas jetting instruction is generated.

[0044] When the water stain drying residue grade is a third preset grade, a drying invalidity prompt information is generated and sent to a user terminal; wherein the drying invalidity prompt information at least includes a target grid label corresponding to the target grid area, the residual water stain thickness, the number of nitrogen gas jetting executions, and the corresponding target control parameter group.

[0045] In a second aspect, the embodiments of the present application further provide a surface drying control device for wafer cleaning, which can execute the surface drying control method for wafer cleaning described above; the device comprises:

[0046] A first determining module is configured to determine a preset water stain target monitoring module jet flow control parameter group based on wafer specification information;

[0047] A obtaining module is configured to obtain wafer surface multidimensional data within a preset time window when a jet flow hits a wafer surface in response to a jet flow start instruction issued based on the jet flow control parameter group;

[0048] A second determining module is configured to determine whether there is a wafer surface to be dried based on the wafer surface multidimensional data;

[0049] A third determining module is configured to determine water stain thickness and positioning grid information of the wafer surface to be dried to match a target nitrogen gas nozzle group and determine a corresponding target control parameter group if there is a wafer surface to be dried;

[0050] A generating module is configured to generate a corresponding nitrogen gas injection instruction based on real-time collected wafer corner information, the positioning grid information and the target nitrogen gas nozzle group, so as to control the target nitrogen gas nozzle group to perform target nitrogen gas injection according to the target control parameter group; wherein the nitrogen gas injection instruction carries an arrival time stamp of the wafer surface to be dried reaching an area covered by the target nitrogen gas nozzle group;

[0051] A fourth determining module is configured to determine a corresponding drying residue detection result according to wafer surface multidimensional data after target nitrogen gas injection is performed, so as to judge whether surface drying is completed based on the drying residue detection result.

[0052] In a third aspect, the embodiments of the present application further provide a surface drying control device for wafer cleaning, which comprises:

[0053] at least one processor; and a memory connected with the at least one processor in communication; wherein the memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor to enable the at least one processor to execute the surface drying control method for wafer cleaning described above.

[0054] Compared with the prior art, the present application has the following remarkable effects:

[0055] By the technical scheme, flexible wafer bottom surface data acquisition can be performed in the wafer spin-drying process, and the spin-drying treatment effect of water stains can be judged, and nitrogen gas nozzle control can be flexibly performed according to the actual state of the water stains on the wafer surface, so that water stain drying treatment is completed by targeted control parameters, and the intelligent level of wafer cleaning surface drying control is greatly improved. The technical problems of the current nitrogen drying technology, such as low flexibility, low drying efficiency and low intelligent level, are solved. BRIEF DESCRIPTION OF DRAWINGS

[0056] The drawings described herein are used to provide further understanding of the present application, and form a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application, and do not constitute improper limitations on the present application. In the drawings:

[0057] Figure 1 A flowchart of a wafer cleaning surface drying control method in an embodiment of the present application is shown in the figure;

[0058] Figure 2 A wafer grid area diagram in an embodiment of the present application is shown in the figure;

[0059] Figure 3 A structure diagram of a wafer cleaning surface drying control device in an embodiment of the present application is shown in the figure;

[0060] Figure 4 A structure diagram of a wafer cleaning surface drying control device in an embodiment of the present application is shown in the figure. DETAILED DESCRIPTION

[0061] To make the purpose, technical scheme and advantages of the present application clearer, the technical scheme of the present application will be described clearly and completely below in combination with specific embodiments of the present application and corresponding drawings. Obviously, the described embodiments are only some of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0062] For wafer drying, the existing mainstream nitrogen drying technology mostly uses fixed parameters for drying, which easily causes the drying treatment to be unable to completely dry based on the actual water stains on the wafer surface, low drying efficiency, and cannot avoid surface damage in the area with little or no water stains due to excessive nitrogen blowing. Secondly, it is unable to perform targeted drying treatment according to the water stain distribution on the wafer surface, so that the intelligent level of wafer drying technology is insufficient.

[0063] Based on this, the embodiment of the present application provides a surface drying control method, device and equipment for wafer cleaning, to solve the technical problems that the nitrogen drying technology is not flexible enough, the drying efficiency is low, and the intelligent level is not high.

[0064] The various embodiments of the present application will be described in detail below with reference to the accompanying drawings.

[0065] The embodiment of the present application provides a surface drying control method for wafer cleaning, which is applied to a wafer spin-drying system. The wafer spin-drying system at least includes a wafer driving module, a preset water stain targeting detection module, a signal acquisition module (including a laser sensor and an industrial camera), a targeted drying module (including a nitrogen nozzle group and its corresponding electromagnetic valve, a pressure sensor, a temperature sensor, a nitrogen heating unit), etc. As shown in the figure, the method can include steps S101-S106: Figure 1

[0066] S101, the microcontroller determines the jet control parameter group of the preset water stain targeting monitoring module based on the wafer specification information.

[0067] It should be noted that the microcontroller (Microcontroller Unit, MCU) is a chip controller in the wafer drying system. The microcontroller is the execution subject of the surface drying control method for wafer cleaning, which is only an example, and the execution subject is not limited to the microcontroller. The execution subject can also be an edge computing chip controller, which is not limited in the present application.

[0068] In the embodiment of the present application, the above-mentioned determination of the jet control parameter group of the preset water stain targeting monitoring module based on the wafer specification information specifically includes:

[0069] According to the wafer specification information and the preset reference specification information, the surface tension coefficient, the diameter coefficient and the hardness coefficient corresponding to the current wafer are determined. According to the surface tension coefficient, the diameter coefficient and the single pulse jet flow calculation formula, the single pulse jet flow of the current wafer is calculated. According to the hardness coefficient, the wafer rotation speed of the current wafer and the preset unit detection point parameter, the pulse frequency corresponding to the current wafer is calculated. The preset unit detection point parameter is determined based on the wafer diameter of the current wafer. According to the reference pressure value, the diameter coefficient and the hardness coefficient of the current wafer, the corresponding jet pressure value is calculated. According to the single pulse jet flow, the pulse frequency and the jet pressure value, the jet control parameter group corresponding to the multi-nozzle array of the preset water stain targeting monitoring module is determined.

[0070] ​Specifically, wafer specification information can be the current wafer specification parameters input by the user through a user terminal or the user interface of the wafer spin-drying system. Wafer specification information includes at least the wafer diameter and wafer material. The wafer material can be used to retrieve material characteristic parameters from a storage module electrically connected to the microcontroller, including surface tension and hardness. The aforementioned preset water stain targeted monitoring module is a high-frequency pulse jet device equipped with a solenoid valve nozzle array to spray high-purity deionized water. After obtaining the wafer specification information, the microcontroller can determine preset reference specification information, including the surface tension and reference diameter of the reference material, with the reference substrate being, for example, monocrystalline silicon. For wafers with different reference substrates and reference diameters, the preset water stain targeted monitoring module needs to use different jet control parameter sets for surface pulse jet treatment. This avoids jet damage to the wafer and allows for physical characteristic adaptation, enabling precise jet control to collect relevant jet feedback data from the wafer surface.

[0071] The formula for calculating single-pulse jet flow rate is as follows:

[0072]

[0073] in, This indicates that when the preset water stain targeting monitoring module performs jet spraying, it should be applied to the current wafer. The surface single-pulse jet flow rate; and These are preset industry parameters, set based on the operating parameters and scenarios of the preset water stain targeted monitoring module. The area of ​​the micro-region to be inspected on the wafer, such as 1 square millimeter. The preset minimum detectable water stain thickness, for example, 0.05 micrometers; For the current wafer The surface tension of the wafer material is an inherent property of the material and can be pre-stored in the corresponding storage module of the controller chip. The surface tension of the wafer material refers to the force between the molecules on the solid surface of the wafer and the adjacent molecules (such as contact media such as air, water, nitrogen, etc.). The surface tension of the reference material (monocrystalline silicon); For the current wafer The current wafer diameter; This is the preset reference diameter. Wherein, This indicates the surface tension coefficient corresponding to the current wafer. This represents the diameter coefficient.

[0074] The pulse frequency calculation formula used to calculate the pulse frequency of the current wafer is as follows:

[0075]

[0076] wherein, represents the pulse frequency of the jet to be applied to the surface of the current wafer when the preset water stain targeting monitoring module performs jet spraying, that is, the pulse frequency of the current wafer in the jet control parameter group; is the rotation speed of the current wafer in the wafer spin-drying system, represents a preset unit detection point parameter, for example, 10. The application can store a corresponding relationship list of different wafer diameters and different preset unit detection point parameters, and determine the value of the unit detection point parameter based on the wafer diameter and the corresponding relationship list. The specific value is determined; is a preset frequency division factor, which is set based on expert experience and is used to limit the pulse frequency within a preset value range; represents a hardness coefficient, is the Vickers hardness of the material corresponding to the current wafer, is the Vickers hardness of the reference material.

[0077] The corresponding reference pressure value is obtained through the material of the current wafer , the above diameter coefficient and hardness coefficient, to calculate the jet pressure value , represents the pressure value of the jet to be applied to the surface of the current wafer when the preset water stain targeting monitoring module performs jet spraying; represents the optimal jet pressure value calibrated in advance under the reference process for the reference material (single crystal silicon). The jet pressure value calculation formula is constructed based on the correlation between jet pressure and material hardness and wafer diameter. Generally speaking, the greater the material hardness, the greater the pressure it can withstand, the greater the wafer diameter, the greater the centrifugal force in the edge region of the wafer, and the jet needs slightly higher pressure to ensure the impact effect.

[0078] Further, the above single-pulse jet flow, pulse frequency and jet pressure value are added to the jet control parameter group for controlling the multi-nozzle array to perform jet spraying, so as to send the jet control parameter group to the preset water stain targeting monitoring module for jet control.

[0079] S102, the microcontroller obtains the multi-dimensional data of the wafer surface within a preset time window when the jet impacts the wafer surface in response to the jet start instruction issued based on the jet control parameter group.

[0080] The microcontroller will generate a jet start instruction containing the jet control parameter group after obtaining the jet control parameter group, so as to start the preset water stain targeting monitoring module.

[0081] After determining that the jet start instruction is triggered, the multi-dimensional data of the wafer surface within a preset time window when the jet impacts the wafer surface will be obtained, which specifically includes:

[0082] The starting time is when the preset water stain targeting monitoring module executes the jet flow starting instruction and sprays the jet flow. The wafer surface scattering signals and wafer surface image data in a preset time window are collected in real time through the preset laser sensor array and the preset industrial camera array. The wafer surface scattering signals and wafer surface image data are timestamped according to the timestamp alignment rule of the preset laser sensor array and the preset industrial camera array, so as to generate corresponding wafer surface multidimensional data after preprocessing the timestamped data.

[0083] That is, the microcontroller starts timing when the preset water stain targeting monitoring module starts spraying the jet flow to the wafer surface under the control of the jet flow starting instruction, and collects the wafer surface data in a preset time window after the starting time by using the preset laser sensor array and the preset industrial camera array, including wafer surface scattering signals and wafer surface image data. Then, the two devices are timestamped to synchronize the collected data, so as to obtain wafer surface multidimensional data.

[0084] In addition, the wafer surface multidimensional data also needs to be preprocessed. The preprocessing includes noise reduction filtering of the wafer surface scattering signals, specifically using a sliding average algorithm with a window size of 3 data points; image cropping to retain a 1 square millimeter target micro area, gray scale correction to eliminate the influence of uneven lighting, and edge enhancement to highlight the gray scale difference between the water stain and the wafer surface. The preprocessed data is stored in the preset storage module as wafer surface multidimensional data for subsequent water stain identification process.

[0085] The above-mentioned preset time window can be set based on expert experience. The setting principle is that the preset time window at least contains a preset time interval after the jet flow hits the wafer surface. Generally, after the jet flow starting instruction is issued, the preset water stain targeting monitoring module will spray for a period of time, then the jet flow will reach the wafer surface after another period of time, and then hit the wafer surface and be thrown away. This process is included in the preset time window. The specific duration of the preset time window is not limited in the present application.

[0086] It should be further pointed out that the multi-nozzle array is not perpendicular to the wafer surface, but has a certain angle with the normal line of the wafer surface, for example, 60 degrees along the radial direction of the wafer surface.

[0087] S103, the microcontroller determines whether there is a water stain to be dried on the wafer surface based on the wafer surface multidimensional data.

[0088] In the embodiments of the present application, the above-mentioned determination of whether there is a water stain to be dried on the wafer surface based on the wafer surface multidimensional data specifically includes:

[0089] According to the wafer surface scattering signals and the pre-divided wafer grid areas, the scattering signal mean values corresponding to each wafer grid area are determined. The scattering signal mean values are matched with the preset water stain judgment standard intervals respectively, so as to determine whether there is a pending water stain grid area according to the matching result. In the case of determining that there is a pending water stain grid area, the image corresponding to the pending water stain grid area is segmented from the wafer surface image data, and the segmented pending water stain grid area image is input into the pre-trained image recognition model. According to the model output result, it is determined whether the pending water stain grid area image has a water stain to be dried.

[0090] Specifically, the wafer surface can be pre-divided into grid areas, wherein the grid size of the pre-divided wafer grid area is set based on the actual use scene. The grid area corresponding to the grid contains a radial width and a circumferential angle. The grid size is generally related to the factory parameters of the sensor device, and is specifically set according to the scene, which is not limited here. The wafer grid area can be understood as a plurality of fan-shaped areas obtained by dividing the wafer with a center point, such as Figure 2 in 201, or a fan-shaped annular area such as Figure 2 in 202 and 203, which can be specifically set by the user and is not limited here.

[0091] After obtaining the wafer surface scattering signals, the scattering signal mean value of each wafer grid area is calculated according to the pre-divided wafer grid area. The wafer grid area is used as the standard for comprehensively judging whether there is a water stain. Each scattering signal mean value is compared with which preset water stain judgment standard interval, and then whether the wafer grid area has a pending water stain is obtained. The preset water stain judgment standard interval includes the scattering signal mean value interval corresponding to no water stain, the scattering signal mean value interval corresponding to water stain, and the scattering signal mean value interval of less water stain and more water stain which can be further divided according to the actual use scene. The present application does not make specific limitation on this.

[0092] If the matching result shows that there is a pending water stain in the wafer grid area, the coordinate area corresponding to the pending water stain grid area is segmented from the wafer surface image data, and then a pre-trained image recognition model is used to further identify whether there is a water stain to be dried. The pre-trained image recognition model can be a convolutional neural network model, which is trained based on a plurality of wafer surface image samples pre-marked with water stains and no water stains. The image recognition model can also use other model algorithms, which are not limited here.

[0093] In the case of determining that there is a water stain to be dried on the wafer surface, the microcontroller determines the water stain thickness and the positioning grid information of the water stain to be dried, so as to match the target nitrogen nozzle group and determine the corresponding target control parameter group.

[0094] If the wafer surface does not have water stains to be baked, the subsequent S104-S105 need not be performed. If the wafer surface has water stains to be baked, the determination of the water stain thickness and the positioning information of the specific grid cell where the water stain is located will be performed.

[0095] Specifically, in the embodiments of the present application, the determination of the water stain thickness and the positioning grid information of the water stain to be baked to match the target nitrogen gas nozzle group specifically includes:

[0096] The water stain grid area is compared with the preset full-wafer water stain distribution thermal map to determine the target grid label of the water stain to be baked according to the comparison result, and the wafer surface physical coordinates corresponding to the target grid label are obtained through a preset physical coordinate conversion formula as the positioning grid information. The target grid label includes the radial annular partition sub-label and the circumferential sector partition sub-label of the target grid area corresponding to the water stain to be baked on the current wafer surface. Based on the target grid label and the preset nitrogen gas nozzle correlation table, the target nitrogen gas nozzle group corresponding to the target grid area is matched. The target nitrogen gas nozzle group includes at least one preset radial nozzle and one preset circumferential nozzle.

[0097] In other words, the microcontroller can call the preset full-wafer water stain distribution thermal map in the storage module, which contains the grid surface corresponding to each grid area on the wafer surface. The water stain grid area obtained through the above S103 can be compared with the thermal map to obtain the target grid label, which represents the radial annular partition sub-label and the circumferential sector partition sub-label of the grid area where the water stain exists, such as (i, j) being the grid area with the radial annular partition sub-label i and the circumferential sector partition sub-label j in the grid division on the wafer surface. At the same time, the preset physical coordinate conversion formula in the storage module is called to calculate the actual position of the grid corresponding to the grid label on the wafer surface. The preset physical coordinate conversion formula can be constructed by the user based on expert experience and actual measurement data of the wafer, which can be understood as a formula for converting the grid area to the world coordinate system, which is not specifically limited here.

[0098] The microcontroller can also call the preset nitrogen gas nozzle correlation table in the storage module, which records the correlation between different grid labels and different nitrogen gas nozzle groups, which can be constructed based on actual experiments, which is not specifically limited here. For different target grid labels, different nitrogen gas nozzle groups can be corresponded, and different nitrogen gas nozzle groups include at least one different nitrogen gas nozzle. Through the matching operation, the target nitrogen gas nozzle group corresponding to the target grid area is obtained, so as to make the target nitrogen gas nozzle group perform targeted nitrogen gas baking on the water stain area along the radial direction, and simultaneously bake the water stain area along the circumferential direction.

[0099] For example, based on the "radial partition i + circumferential sector j" of the target grid, the corresponding nitrogen nozzle group (the nitrogen nozzle is consistent with the layout of the jet nozzle, fixed in the radial direction, a total of 5 groups, numbered 1-5, corresponding to radial partitions 1-5): radial nozzle matching: the radial partition i to which the target grid belongs directly corresponds to the i number of nitrogen nozzles (for example, the i = 3 grid corresponds to the 3 number of nitrogen nozzles), ensuring that the radial coverage range of the nozzle completely coincides with the target grid; circumferential coverage verification: confirming that the circumferential coverage angle of the i number of nitrogen nozzles (for example, a single nozzle covers 30° in the circumferential direction) contains the circumferential coordinates of the target grid, if it does not contain (for example, the nozzle covers 150°-180°, and the circumferential coordinate is 185°), then match the adjacent i + 1 number of nozzles (or i - 1 number, preferentially match the nozzle with a smaller number); nozzle group marking: each target grid corresponds to a core nitrogen nozzle (for example, the (3, 18) grid corresponds to the 3 nozzle), marked as the target nitrogen nozzle group (a single grid corresponds to a single nozzle, and multiple grids can share the same nozzle).

[0100] It should be noted that the target nitrogen nozzle group of the present application at least includes one radial nozzle and one circumferential nozzle, on the one hand to speed up the drying of the water stains, and on the other hand to avoid the problem that the water stains are displaced in a large area on the wafer surface due to nitrogen injection in only one direction, causing more serious pollution, or when there are particle defects on the wafer surface, the particles are displaced on the wafer surface, causing serious damage to the wafer, etc.

[0101] Among them, the radial nozzle can be understood as a nozzle that sprays nitrogen in the normal direction of the wafer surface, such as along the radius of the wafer above the center of the wafer, and multiple radial nozzles can spray nitrogen to different annular regions on the wafer surface; the circumferential nozzle can be understood as multiple nozzles arranged at the outer edge of the wafer circumference, spraying nitrogen from the circumferential edge of the wafer to the center of the wafer (spraying for a sector), which can be evenly arranged at the outer position of the wafer circumference.

[0102] Further, in an embodiment of the present application, a corresponding target control parameter group is determined, specifically including:

[0103] Based on the preset water stain thickness mapping model and the average scattered signal corresponding to the water stain grid area of the water stain to be dried, the water stain thickness of the water stain to be dried is determined, so as to calculate the radial injection pressure value of the radial nozzle according to the water stain thickness and the preset injection pressure calculation formula. According to the radial injection pressure value, the preset injection flow calculation formula and the preset injection time calculation formula, the radial flow value and the radial injection time of the radial nozzle are determined, and the corresponding radial injection angle is determined according to the wafer diameter of the current wafer. The radial injection pressure value, the radial flow value, the radial injection time, the radial injection angle and the preset circumferential nozzle control parameter corresponding to the current wafer are added to the target control parameter group.

[0104] That is, the present application is provided with a water thickness mapping model, which contains different scattering signal mean values and mapping correlation formulas after different water stains, or a pre-set machine learning formula, so as to calculate the water thickness according to the scattering signal mean value, which is not limited in the present application. When the mapping correlation formula is included, the formula is as follows: , wherein, is the water thickness corresponding to the grid area (i, j), represents a pre-set material correction coefficient, which is determined based on the material of the current wafer, and the material correction coefficient is a coefficient pre-calibrated based on the actual scene, which is not limited here; represents the water-free scattering signal threshold of the radial partition to which the target grid belongs, is the scattering signal mean value obtained by summing and calculating the average of the scattering signal of the target grid area; represents a pre-set thickness reference value, which is obtained by the user based on expert experience, which is not limited here. After obtaining the water thickness, the radial jet pressure value is calculated according to the pre-set jet pressure calculation formula:

[0105]

[0106] , wherein, represents the radial jet pressure value when the radial nozzle sprays nitrogen to the grid area, represents a pre-calibrated radial jet base pressure value, represents the pre-set nozzle maximum pressure increment of the radial nozzle; represents a radial pressure correction coefficient, which is determined based on the wafer diameter, different wafer diameters correspond to different radial pressure correction coefficients, and the specific value is set by the user according to the actual use scene, which is not limited here.

[0107] The radial flow value is calculated according to the pre-set jet flow calculation formula, which is as follows:

[0108]

[0109] , wherein, represents the radial flow value when the radial nozzle sprays nitrogen to the grid area, represents a pre-set base flow value, represents a pre-set nozzle maximum flow increment, represents a pre-set pressure reference value; represents a pre-set radial flow correction coefficient, which is obtained in the same way as the radial pressure correction coefficient, which is not described here.

[0110] The radial jet duration is calculated according to the pre-set jet duration calculation formula, which is as follows:

[0111]

[0112] wherein, represents a radial injection duration when the radial nozzle performs nitrogen injection on the grid area, represents a preset basic duration, represents a preset maximum duration increment; represents a duration correction coefficient related to the wafer material, which is determined according to the wafer material and is set based on expert experience, and is not limited here.

[0113] Meanwhile, the storage module stores radial injection angles corresponding to different wafer diameters. If the radial nozzle cannot automatically adjust the radial injection angle, manual intervention is required to complete the radial injection angle adjustment according to the current wafer diameter before the current wafer is placed into the spin-drying system. According to the radial injection pressure value, the radial flow value and the radial injection duration, the radial target control parameters are obtained. For the circumferential nozzle, the circumferential pressure, the circumferential angle and the circumferential duration of the circumferential nozzle can be preset. For the circumferential flow, the circumferential flow value can be obtained according to the corresponding relationship between the preset wafer rotation speed and the circumferential flow. The greater the wafer rotation speed, the greater the circumferential flow value. The specific corresponding relationship function can be set by the user based on the actual use scenario. Thus, the preset circumferential nozzle control parameters are obtained. Subsequently, a target control parameter group for controlling the target nitrogen nozzle group is constructed.

[0114] S105, the microcontroller generates corresponding nitrogen injection instructions based on the real-time collected wafer rotation angle information, positioning grid information and target nitrogen nozzle group, to control the target nitrogen nozzle group to perform target nitrogen injection according to the target control parameter group.

[0115] wherein, the nitrogen injection instruction carries an arrival timestamp of the water stain to be dried reaching the area covered by the target nitrogen nozzle group.

[0116] In the embodiments of the present application, the corresponding nitrogen injection instructions are generated based on the real-time collected wafer rotation angle information, positioning grid information and target nitrogen nozzle group, specifically including:

[0117] According to the real-time collected wafer rotation angle information, the current absolute rotation angle value and the real-time rotation speed value of the current wafer are determined. According to the positioning grid information, the target grid rotation angle value of the target grid area corresponding to the water stain to be dried is determined, so as to determine the relative position information between the water stain to be dried and the target nitrogen nozzle group according to the difference between the current absolute rotation angle value and the target grid rotation angle value. According to the relative position information and the real-time rotation speed value, the arrival timestamp is determined. According to the arrival timestamp and the target control parameter group, the nitrogen injection instruction is generated.

[0118] That is, the microcontroller can collect the wafer rotation angle signal in real time through the encoder on the wafer driving shaft, output the current absolute rotation angle value and real-time rotation speed value, and at the same time, mechanical vibration noise can be pre-processed by using a sliding average filtering algorithm, or other techniques can be used for noise reduction, which is not specifically limited here.

[0119] Subsequently, the microcontroller will also call the circumferential coordinate data in the positioning grid information to obtain the target grid rotation angle value of the grid to be dried at the current absolute rotation angle value, for example, 175°, and then calculate the difference between the current absolute rotation angle value and the target grid rotation angle value to obtain the angle deviation of the water stain to be dried relative to the target nitrogen nozzle group, that is, the relative position of the two. Subsequently, the microcontroller can also determine the arrival time stamp when the water stain to be dried first reaches the boundary of the target nitrogen nozzle group coverage area according to the preset spray coverage area boundary of the target nitrogen nozzle group, and the arrival time stamp is calculated according to the rotation speed value and the deviation angle in the relative position information. Subsequently, according to the arrival time stamp and the target control parameter group, a nitrogen gas spraying instruction is generated so as to spray nitrogen gas when the water stain to be dried reaches the target nitrogen nozzle group coverage area.

[0120] S106, the microcontroller determines the corresponding drying residue detection result according to the multi-dimensional data of the wafer surface after performing the targeted nitrogen gas spraying, so as to judge whether the surface drying is completed based on the drying residue detection result.

[0121] In the embodiments of the present application, the drying residue detection result is determined according to the multi-dimensional data of the wafer surface after performing the targeted nitrogen gas spraying, which specifically includes:

[0122] After performing the targeted nitrogen gas spraying, the multi-dimensional data of the wafer surface is obtained to determine the residual water stain thickness of the target grid area corresponding to the water stain to be dried. According to the residual water stain thickness and the preset residual level interval, the corresponding water stain drying residue level is determined as the drying residue detection result.

[0123] In other words, after the nitrogen gas spraying is performed, the preset water stain target monitoring module, the preset laser sensor array and the preset industrial camera array are controlled to reacquire the multi-dimensional data of the wafer surface, so as to perform the above steps to judge whether the water stain to be dried exists and its residual water stain thickness exists. The microcontroller can also call the preset residual level interval to further determine the current water stain drying residue level, so as to further flexibly process the water stain.

[0124] Specifically, the flexible processing of the residual water stain includes:

[0125] When the water stain drying residual level is the first preset level, a secondary nitrogen gas injection instruction is generated. When the water stain drying residual level is the second preset level, the target control parameter group is updated according to the preset parameter strengthening strategy, and a corresponding nitrogen gas injection instruction is generated. When the water stain drying residual level is the third preset level, a drying invalid prompt information is generated and sent to the user terminal. The drying invalid prompt information at least includes the target grid label corresponding to the target grid area, the residual water stain thickness, the nitrogen gas injection execution number and the corresponding target control parameter group.

[0126] When the water stain processing is completed through the above processing process, a completion drying prompt information is generated and sent to the user terminal. The user terminal can be a user mobile phone, computer or other equipment, which is not limited in the present application.

[0127] Through the above technical solution, the present application can flexibly collect the wafer surface data during the wafer spin-drying process, judge the spin-drying processing effect of the water stain, and flexibly control the nitrogen gas nozzle according to the actual state of the water stain on the wafer surface to complete the water stain drying processing with targeted control parameters, which greatly improves the intelligent level of wafer cleaning surface drying control. The technical problems of the current nitrogen drying technology, such as inflexibility, low drying efficiency and low intelligent level, are solved.

[0128] Figure 3 A structure diagram of a surface drying control device for wafer cleaning provided by the embodiment of the present application is shown in Figure 3 The device can execute the above-mentioned surface drying control method for wafer cleaning. The surface drying control device 300 for wafer cleaning includes:

[0129] The first determination module 301 is configured to determine a jet control parameter group of a preset water stain targeting monitoring module based on wafer specification information. The acquisition module 302 is configured to acquire wafer surface multidimensional data within a preset time window in which a jet impacts a wafer surface in response to a jet start instruction issued based on the jet control parameter group. The second determination module 303 is configured to determine whether there is a water stain to be dried on the wafer surface based on the wafer surface multidimensional data. The third determination module 304 is configured to determine water stain thickness and positioning grid information of the water stain to be dried if there is a water stain to be dried, so as to match a target nitrogen gas nozzle group and determine a corresponding targeting control parameter group. The generation module 305 is configured to generate a corresponding nitrogen gas injection instruction based on real-time collected wafer rotation angle information, positioning grid information and the target nitrogen gas nozzle group, so as to control the target nitrogen gas nozzle group to perform targeted nitrogen gas injection according to the targeting control parameter group. The nitrogen gas injection instruction carries an arrival time stamp of the water stain to be dried reaching a region covered by the target nitrogen gas nozzle group. The fourth determination module 306 is configured to determine a corresponding drying residue detection result according to wafer surface multidimensional data after the targeted nitrogen gas injection is performed, so as to judge whether surface drying is completed based on the drying residue detection result.

[0130] Figure 4 A structural schematic diagram of a surface drying control device for wafer cleaning provided by an embodiment of the present application is shown in FIG. 1. As shown in FIG. 1, the device comprises: Figure 4

[0131] at least one processor; and a memory connected with the at least one processor in communication. The memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor to enable the at least one processor to:

[0132] determine a jet control parameter group of a preset water stain targeting monitoring module based on wafer specification information. Acquire wafer surface multidimensional data within a preset time window in which a jet impacts a wafer surface in response to a jet start instruction issued based on the jet control parameter group. Determine whether there is a water stain to be dried on the wafer surface based on the wafer surface multidimensional data. If there is a water stain to be dried, determine water stain thickness and positioning grid information of the water stain to be dried, so as to match a target nitrogen gas nozzle group and determine a corresponding targeting control parameter group. Generate a corresponding nitrogen gas injection instruction based on real-time collected wafer rotation angle information, positioning grid information and the target nitrogen gas nozzle group, so as to control the target nitrogen gas nozzle group to perform targeted nitrogen gas injection according to the targeting control parameter group. The nitrogen gas injection instruction carries an arrival time stamp of the water stain to be dried reaching a region covered by the target nitrogen gas nozzle group. Determine a corresponding drying residue detection result according to wafer surface multidimensional data after the targeted nitrogen gas injection is performed, so as to judge whether surface drying is completed based on the drying residue detection result.

[0133] ​The various embodiments herein are described in progressive manner, and the same or similar parts among the various embodiments can be referred to each other, and each embodiment focuses on the difference from other embodiments. In particular, for the device and equipment embodiments, since they are basically similar to the method embodiments, the description is relatively simple, and the relevant parts can be referred to the part of the method embodiments.

[0134] The device and equipment provided by the embodiments of the present application correspond to the method, and therefore, the device and equipment also have the similar beneficial technical effects as the method. Since the beneficial technical effects of the method have been described in detail above, the beneficial technical effects of the device and equipment will not be repeated here.

[0135] It should also be noted that the terms "comprising", "containing", or any other variant thereof are intended to cover non-exclusive inclusion, so that a process, method, article or equipment including a series of elements not only includes those elements, but also includes other elements not explicitly listed, or includes elements inherent to such a process, method, article or equipment. Without more limitations, the element defined by the statement "comprising a" does not exclude the presence of other identical elements in the process, method, article or equipment comprising the element.

[0136] The above only describes the embodiments of the present application and is not intended to limit the present application. The present application can have various changes and modifications for those skilled in the art. Any modification, equivalent replacement, improvement, etc. within the spirit and principle of the present application shall be included in the scope of the claims of the present application.

Claims

1. A method for controlling surface drying during wafer cleaning, characterized in that, The method is applied to a wafer spin-drying system; the method comprises: Determine the jet control parameter group of the preset water stain targeting monitoring module based on wafer specification information; In response to the jet start instruction issued based on the jet control parameter group, obtain wafer surface multi-dimensional data within a preset time window when the jet hits the wafer surface; Based on the wafer surface multi-dimensional data, determine whether there is a water stain to be dried on the wafer surface; If so, determine the water stain thickness and positioning grid information of the water stain to be dried to match the target nitrogen gas nozzle group and determine the corresponding targeting control parameter group; Based on the real-time collected wafer rotation angle information, the positioning grid information and the target nitrogen gas nozzle group, generate a corresponding nitrogen gas injection instruction to control the target nitrogen gas nozzle group to perform targeted nitrogen gas injection according to the targeting control parameter group; wherein the nitrogen gas injection instruction carries a time stamp of the arrival of the water stain to be dried at the target nitrogen gas nozzle group covered area; According to the wafer surface multi-dimensional data after the targeted nitrogen gas injection is performed, determine the corresponding drying residue detection result to judge whether the surface drying is completed based on the drying residue detection result.

2. The method for controlling surface drying of a wafer for cleaning according to claim 1, wherein Determine the jet control parameter group of the preset water stain targeting monitoring module based on wafer specification information, specifically comprising: According to the wafer specification information and the preset reference specification information, determine the surface tension coefficient, diameter coefficient and hardness coefficient corresponding to the current wafer; According to the surface tension coefficient, the diameter coefficient and the single pulse jet flow calculation formula, calculate the single pulse jet flow of the current wafer; According to the hardness coefficient, the wafer rotation speed of the current wafer, and preset unit detection point parameters, a pulse frequency corresponding to the current wafer is calculated; wherein the preset unit detection point parameters are determined based on the wafer diameter of the current wafer; and a pulse frequency calculation formula for calculating the pulse frequency of the current wafer is ; represents the pulse frequency of the current wafer in the jet control parameter group, that is, the pulse frequency to be applied to the surface of the current wafer when the preset water stain target monitoring module performs jet injection; is the wafer rotation speed of the current wafer in the wafer spin-drying system, represents preset unit detection point parameters, and a corresponding relationship list of different wafer diameters and different preset unit detection point parameters is stored, and the pulse frequency is determined based on the wafer diameter and the corresponding relationship list to determine the specific value; is a preset frequency division factor, which is used to limit the pulse frequency within a preset value range; represents a hardness coefficient, is the Vickers hardness of the material corresponding to the current wafer, is the Vickers hardness of the reference material; According to the reference pressure value of the current wafer, the diameter coefficient and the hardness coefficient, calculate the corresponding jet pressure value; According to the single pulse jet flow, the pulse frequency and the jet pressure value, determine the jet control parameter group corresponding to the multi-nozzle array of the preset water stain targeting monitoring module.

3. The method for controlling surface drying of a wafer for cleaning according to claim 1, wherein Obtain wafer surface multi-dimensional data within a preset time window when the jet hits the wafer surface, specifically comprising: With the preset water stain targeting monitoring module executing the jet start instruction and spraying the jet as the starting time, real-time collect wafer surface scattering signals and wafer surface image data within the preset time window through a preset laser sensor array and a preset industrial camera array; According to the timestamp alignment rule of the preset laser sensor array and the preset industrial camera array, timestamp align the wafer surface scattering signals and the wafer surface image data to generate corresponding wafer surface multi-dimensional data after preprocessing the timestamp alignment data.

4. The method for controlling surface drying of a wafer for cleaning according to claim 3, wherein Based on the wafer surface multi-dimensional data, determine whether there is a water stain to be dried on the wafer surface, specifically comprising: According to the wafer surface scattering signals and the pre-divided wafer grid area, determine the scattering signal mean value corresponding to each wafer grid area respectively; Match each scattering signal mean value with a preset water stain determination standard interval respectively to determine whether there is a water stain grid area to be determined according to the matching result; If so, the image corresponding to the pending water stain grid area is segmented from the wafer surface image data, and the segmented pending water stain grid area image is input into a pre-trained image recognition model; According to the model output result, it is determined whether the pending water stain grid area image exists the pending baking water stain.

5. The method for controlling surface drying of a wafer for cleaning according to claim 3, wherein Determine the water stain thickness and positioning grid information of the pending baking water stain to match the target nitrogen gas nozzle group, specifically including: Compare the water stain grid area with the preset full-wafer water stain distribution thermal diagram to determine the target grid label of the pending baking water stain according to the comparison result, and obtain the wafer surface physical coordinates corresponding to the target grid label through a preset physical coordinate conversion formula as the positioning grid information; wherein the target grid label includes the radial ring partition sub-label and the circumferential sector partition sub-label of the target grid area corresponding to the pending baking water stain on the current wafer surface; Based on the target grid label and the preset nitrogen gas nozzle correlation table, the target nitrogen gas nozzle group corresponding to the target grid area is matched; wherein the target nitrogen gas nozzle group at least includes one preset radial nozzle and one preset circumferential nozzle.

6. The method of claim 4, wherein the surface drying is controlled by adjusting the temperature of the wafer chuck. Determine the corresponding target control parameter group, specifically including: Based on the preset water stain thickness mapping model and the average of the scattering signal corresponding to the water stain grid area of the pending baking water stain, the water stain thickness of the pending baking water stain is determined, and the radial injection pressure value of the radial nozzle is calculated according to the water stain thickness and a preset injection pressure calculation formula; According to the radial injection pressure value, a preset injection flow calculation formula and a preset injection time calculation formula, the radial flow value and the radial injection time length of the radial nozzle are determined, and the corresponding radial injection angle is determined according to the wafer diameter of the current wafer; The radial injection pressure value, the radial flow value, the radial injection time length, the radial injection angle and the preset circumferential nozzle control parameter corresponding to the current wafer are added to the target control parameter group.

7. The method for controlling surface drying of a wafer for cleaning according to claim 1, wherein Based on the real-time collected wafer rotation angle information, the positioning grid information and the target nitrogen gas nozzle group, the corresponding nitrogen gas injection instruction is generated, specifically including: According to the real-time collected wafer rotation angle information, the current absolute rotation angle value and the real-time rotation speed value of the current wafer are determined; According to the positioning grid information, the target grid rotation angle value of the target grid area corresponding to the pending baking water stain is determined, so as to determine the relative position information between the pending baking water stain and the target nitrogen gas nozzle group according to the difference between the current absolute rotation angle value and the target grid rotation angle value; According to the relative position information and the real-time rotation speed value, the arrival timestamp is determined; According to the arrival timestamp and the target control parameter group, the nitrogen gas injection instruction is generated.

8. The method for controlling surface drying of a wafer for cleaning according to claim 1, wherein According to the wafer surface multi-dimensional data after executing the targeted nitrogen gas injection, the corresponding baking residue detection result is determined, specifically including: After executing the targeted nitrogen gas injection, the wafer surface multi-dimensional data is obtained to determine the residual water stain thickness of the target grid area corresponding to the pending baking water stain; According to the residual water stain thickness and the preset residual grade interval, a corresponding water stain drying residual grade is determined, and the drying residual detection result is obtained; The method further includes: When the water stain drying residual grade is a first preset grade, a secondary nitrogen gas injection instruction is generated; When the water stain drying residual grade is a second preset grade, the target control parameter group is updated according to a preset parameter strengthening strategy, and a corresponding nitrogen gas injection instruction is generated; When the water stain drying residual grade is a third preset grade, a drying invalidation prompt information is generated and sent to a user terminal; wherein the drying invalidation prompt information at least includes a target grid label corresponding to the target grid area, the residual water stain thickness, the nitrogen gas injection execution frequency and the corresponding target control parameter group.

9. A surface drying control apparatus for wafer cleaning, characterized by, The device can perform the surface drying control method for wafer cleaning according to any one of claims 1-8; the device includes: A first determination module is configured to determine a jet flow control parameter group of a preset water stain target monitoring module based on wafer specification information; An acquisition module is configured to acquire wafer surface multidimensional data within a preset time window when a jet flow hits a wafer surface in response to a jet flow start instruction issued based on the jet flow control parameter group; A second determination module is configured to determine whether a wafer surface has a water stain to be dried based on the wafer surface multidimensional data; A third determination module is configured to determine a water stain thickness and positioning grid information of the water stain to be dried to match a target nitrogen gas nozzle group and determine a corresponding target control parameter group if the wafer surface has the water stain to be dried; A generation module is configured to generate a corresponding nitrogen gas injection instruction based on real-time collected wafer rotation angle information, the positioning grid information and the target nitrogen gas nozzle group, so as to control the target nitrogen gas nozzle group to perform target nitrogen gas injection according to the target control parameter group; wherein the nitrogen gas injection instruction carries an arrival time stamp of the water stain to be dried reaching an area covered by the target nitrogen gas nozzle group; A fourth determination module is configured to determine a drying residual detection result according to wafer surface multidimensional data after target nitrogen gas injection, so as to determine whether surface drying is completed based on the drying residual detection result.

10. A surface drying control apparatus for wafer cleaning, characterized by, The device includes: at least one processor; and a memory connected to the at least one processor in communication; wherein The memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor to enable the at least one processor to perform the surface drying control method for wafer cleaning according to any one of claims 1-8.

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