A GaN device AC simulation method, device, equipment and storage medium

Abstract

The application discloses a GaN device AC simulation method, device and equipment and a storage medium. The method comprises the following steps: determining a first equivalent capacitance, a second equivalent capacitance and a third equivalent capacitance according to a gate simulation voltage, a drain simulation voltage and a source simulation voltage of a target GaN device, and a conversion coefficient and a trained charge determination model; determining a target gate current, a target drain current and a target source current of the target GaN device according to the gate simulation voltage, the drain simulation voltage, the source simulation voltage, the first equivalent capacitance, the second equivalent capacitance and the third equivalent capacitance; updating an original device model corresponding to the target GaN device according to the target gate current, the target drain current and the target source current to obtain a target device model; and performing AC simulation on the target GaN device based on a preset test circuit according to the target device model.

Description

Technical Field

[0001] This invention relates to the field of semiconductor device design and circuit simulation, and in particular to a GaN device AC simulation method, apparatus, device, and storage medium. Background Technology

[0002] Traditional AC simulation methods for GaN devices rely on physical models to derive the relationship between charge and voltage, and then indirectly calculate the capacitance value through the physical definitions of charge and capacitance. In practical engineering applications, this method has the following problems: First, a single simulation can take several hours or even days, resulting in low simulation efficiency. Second, it is highly dependent on physical parameters, which makes the calibration of a GaN device model very time-consuming, and the model needs to be re-derived after changes in device structure and process, resulting in high adaptation costs. Summary of the Invention

[0003] This invention provides a GaN device AC simulation method, apparatus, device, and storage medium to improve the simulation efficiency of GaN devices and reduce the adaptation cost of GaN device AC simulation.

[0004] According to one aspect of the present invention, an AC simulation method for GaN devices is provided, the method comprising:

[0005] Obtain the simulated gate voltage, simulated drain voltage, and simulated source voltage of the target GaN device;

[0006] Based on the simulated gate voltage, simulated drain voltage, and simulated source voltage, and using a trained charge determination model, the virtual gate charge and virtual drain charge of the target GaN device are determined. The virtual gate charge is the gate charge of the target GaN device obtained through the trained charge determination model; the virtual drain charge is the drain charge of the target GaN device obtained through the trained charge determination model.

[0007] The first equivalent capacitance, the second equivalent capacitance, and the third equivalent capacitance are determined based on the gate virtual charge, the drain virtual charge, the drain voltage, the source simulated voltage, and the conversion factor.

[0008] Based on the gate simulation voltage, drain simulation voltage, source simulation voltage, first equivalent capacitance, second equivalent capacitance, and third equivalent capacitance, determine the target gate current, target drain current, and target source current of the target GaN device.

[0009] Based on the target gate current, target drain current and target source current, the original device model corresponding to the target GaN device is updated to obtain the target device model. Based on the target device model and a preset test circuit, AC simulation of the target GaN device is performed.

[0010] Specifically, based on the gate virtual charge, drain virtual charge, drain simulated voltage, source simulated voltage, and conversion factor, the first equivalent capacitance, second equivalent capacitance, and third equivalent capacitance are determined, including:

[0011] Calculate the derivative of the gate virtual charge with respect to the drain simulation voltage, and use it as the first derivative;

[0012] Based on the first derivative and the conversion coefficient, the first equivalent capacitance is determined using the following formula:

[0013] ;

[0014] Wherein, CGD represents the first equivalent capacitance; qg represents the gate virtual charge; This represents the simulated drain voltage; Denotes the first derivative; Indicates the conversion factor;

[0015] Calculate the derivative of the gate virtual charge with respect to the source simulated voltage, and use it as the second derivative;

[0016] Based on the second derivative, the second equivalent capacitance can be obtained using the following formula:

[0017] ;

[0018] Wherein, CGS represents the second equivalent capacitance; Indicates the simulated source voltage; The function represents the second derivative; round() represents the rounding function.

[0019] Calculate the derivative of the drain virtual charge with respect to the source simulated voltage, and use it as the third derivative;

[0020] Based on the third derivative, the third equivalent capacitance can be obtained using the following formula:

[0021] ;

[0022] Where CDS represents the third equivalent capacitance; qd represents the drain virtual charge; This represents the third derivative.

[0023] Optionally, the conversion factor is determined based on the simulated drain voltage and the simulated source voltage.

[0024] Optionally, based on the gate simulation voltage, drain simulation voltage, source simulation voltage, first equivalent capacitance, second equivalent capacitance, and third equivalent capacitance, the target gate current, target drain current, and target source current of the target GaN device are determined, including:

[0025] The first voltage difference is determined based on the simulated gate voltage and the simulated source voltage.

[0026] The second voltage difference is determined based on the simulated gate voltage and the simulated drain voltage.

[0027] The third voltage difference is determined based on the simulated drain voltage and the simulated source voltage.

[0028] Based on the first voltage difference, the second voltage difference, the third voltage difference, the first equivalent capacitance, the second equivalent capacitance, and the third equivalent capacitance, the target gate current, the target drain current, and the target source current of the target GaN device are determined.

[0029] Optionally, the target gate current, target drain current, and target source current of the target GaN device are determined based on the first voltage difference, the second voltage difference, the third voltage difference, the first equivalent capacitance, the second equivalent capacitance, and the third equivalent capacitance, including:

[0030] The gate-source current is determined based on the first voltage difference and the second equivalent capacitance;

[0031] The gate leakage current is determined based on the second voltage difference and the first equivalent capacitance;

[0032] Determine the drain-source current based on the third voltage difference and the third equivalent capacitance;

[0033] The target gate current of the target GaN device is determined based on the gate-source current and the gate-drain current.

[0034] Determine the target drain current of the target GaN device based on the gate drain current and drain-source current;

[0035] The target source current of the target GaN device is determined based on the gate-source current and drain-source current.

[0036] According to another aspect of the present invention, an AC simulation apparatus for GaN devices is provided, the apparatus comprising:

[0037] The device voltage acquisition module is used to acquire the simulated gate voltage, simulated drain voltage, and simulated source voltage of the target GaN device.

[0038] The charge determination module is used to determine the virtual gate charge and virtual drain charge of the target GaN device based on the simulated gate voltage, simulated drain voltage, and simulated source voltage, using a trained charge determination model. The virtual gate charge is the gate charge of the target GaN device obtained through the trained charge determination model; the virtual drain charge is the drain charge of the target GaN device obtained through the trained charge determination model.

[0039] The equivalent capacitance determination module is used to determine the first equivalent capacitance, the second equivalent capacitance, and the third equivalent capacitance based on the gate virtual charge, the drain virtual charge, the drain voltage, the source simulation voltage, and the conversion factor.

[0040] The device current determination module is used to determine the target gate current, target drain current and target source current of the target GaN device based on the gate simulation voltage, drain simulation voltage, source simulation voltage, first equivalent capacitance, second equivalent capacitance and third equivalent capacitance.

[0041] The device AC simulation module is used to update the original device model corresponding to the target GaN device based on the target gate current, target drain current and target source current to obtain the target device model, and to perform AC simulation on the target GaN device based on the target device model and a preset test circuit.

[0042] The equivalent capacitance determination module is specifically used for:

[0043] Calculate the derivative of the gate virtual charge with respect to the drain simulation voltage, and use it as the first derivative;

[0044] Based on the first derivative and the conversion coefficient, the first equivalent capacitance is determined using the following formula:

[0045] ;

[0046] Wherein, CGD represents the first equivalent capacitance; qg represents the gate virtual charge; This represents the simulated drain voltage; Denotes the first derivative; Indicates the conversion factor;

[0047] Calculate the derivative of the gate virtual charge with respect to the source simulated voltage, and use it as the second derivative;

[0048] Based on the second derivative, the second equivalent capacitance can be obtained using the following formula:

[0049] ;

[0050] Wherein, CGS represents the second equivalent capacitance; Indicates the simulated source voltage; The function represents the second derivative; round() represents the rounding function.

[0051] Calculate the derivative of the drain virtual charge with respect to the source simulated voltage, and use it as the third derivative;

[0052] Based on the third derivative, the third equivalent capacitance can be obtained using the following formula:

[0053] ;

[0054] Where CDS represents the third equivalent capacitance; qd represents the drain virtual charge; This represents the third derivative.

[0055] According to another aspect of the present invention, an electronic device is provided, the electronic device comprising:

[0056] At least one processor;

[0057] and a memory communicatively connected to at least one processor; wherein,

[0058] The memory stores a computer program that can be executed by at least one processor, such that the at least one processor is able to execute the GaN device AC simulation method of any embodiment of the present invention.

[0059] According to another aspect of the present invention, a computer-readable storage medium is provided, the computer-readable storage medium storing computer instructions for causing a processor to execute and implement the GaN device AC simulation method of any embodiment of the present invention.

[0060] According to another aspect of the present invention, a computer program product is provided, comprising a computer program that, when executed by a processor, implements the GaN device AC simulation method of any embodiment of the present invention.

[0061] The technical solution of this invention involves obtaining the simulated gate voltage, drain voltage, and source voltage of the target GaN device; determining the virtual gate charge and virtual drain charge of the target GaN device based on the simulated gate voltage, drain voltage, and source voltage, using a trained charge determination model; determining the first equivalent capacitance, second equivalent capacitance, and third equivalent capacitance based on the virtual gate charge, virtual drain charge, simulated drain voltage, simulated source voltage, and conversion coefficient; determining the target gate current, target drain current, and target source current of the target GaN device based on the simulated gate voltage, drain voltage, source voltage, first equivalent capacitance, second equivalent capacitance, and third equivalent capacitance; updating the original device model corresponding to the target GaN device based on the target gate current, target drain current, and target source current to obtain the target device model; and performing AC simulation on the target GaN device based on the target device model and a preset test circuit. Compared to traditional GaN device AC simulation methods, the above-described technical solution retains the efficient modeling approach of outputting virtual charge through a neural network model (i.e., a trained charge determination model). Furthermore, by converting the virtual charge into an equivalent capacitance, it directly determines the target gate current, target drain current, and target source current of the target GaN device based on the equivalent capacitance and voltage. This bypasses the charge-time derivative step in traditional GaN device AC simulation methods, avoiding simulation distortion, shortening simulation time, and improving the simulation efficiency of GaN devices. Simultaneously, for different types and voltage levels of GaN devices, only the simulated gate voltage, drain voltage, and source voltage need to be changed to obtain the corresponding device model, eliminating the need to re-derive the device model. This shortens the adaptation time for GaN devices and reduces the adaptation cost of GaN device AC simulation.

[0062] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of the present invention, nor is it intended to limit the scope of the invention. Other features of the invention will become readily apparent from the following description. Attached Figure Description

[0063] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0064] Figure 1 This is a flowchart of an AC simulation method for GaN devices provided in Embodiment 1 of the present invention.

[0065] Figure 2This is a flowchart of an AC simulation method for GaN devices provided in Embodiment 2 of the present invention.

[0066] Figure 3 This is a schematic diagram of the structure of a GaN device AC simulation device provided in Embodiment 3 of the present invention.

[0067] Figure 4 This is a schematic diagram of the structure of an electronic device that implements the GaN device AC simulation method of this invention. Detailed Implementation

[0068] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0069] It should be noted that the terms "target," "first," and "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0070] Example 1:

[0071] Figure 1 This is a flowchart of an AC simulation method for GaN devices provided in Embodiment 1 of the present invention. This embodiment is applicable to the AC simulation of GaN devices. The method can be executed by a GaN device AC simulation device, which can be implemented in hardware and / or software and can be configured in an electronic device. Figure 1 As shown, the method includes:

[0072] S101. Obtain the simulated gate voltage, simulated drain voltage, and simulated source voltage of the target GaN device.

[0073] Here, the target GaN device refers to the gallium nitride device that needs to be AC ​​simulated; for example, the target GaN device could be a GaN HEMT device. Gate simulation voltage refers to the gate voltage required for AC simulation of the target GaN device; drain simulation voltage refers to the drain voltage required for AC simulation of the target GaN device; and source simulation voltage refers to the source voltage required for AC simulation of the target GaN device.

[0074] Specifically, the gate simulation voltage, drain simulation voltage, and source simulation voltage of the target GaN device can be determined based on actual business needs.

[0075] S102. Based on the gate simulation voltage, drain simulation voltage, and source simulation voltage, determine the gate virtual charge and drain virtual charge of the target GaN device using the trained charge determination model.

[0076] Here, gate virtual charge refers to the gate charge of the target GaN device obtained through a trained charge determination model; drain virtual charge refers to the drain charge of the target GaN device obtained through a trained charge determination model. The trained charge determination model is obtained by training an artificial neural network model with a large amount of voltage data (including simulated gate voltage, simulated drain voltage, and simulated source voltage) and real charge data (including real gate charge and real drain charge) from a large number of sample GaN devices.

[0077] Specifically, a preset normalization algorithm can be used to normalize the gate simulation voltage, drain simulation voltage, and source simulation voltage respectively to obtain the normalized gate simulation voltage, drain simulation voltage, and source simulation voltage. The normalized gate simulation voltage, drain simulation voltage, and source simulation voltage are then input into the trained charge determination model to obtain the gate virtual charge and drain virtual charge of the target GaN device.

[0078] The preset normalization algorithm can be determined based on actual business needs or the expert experience of those skilled in the art. For example, the preset normalization algorithm can be a linear normalization algorithm or a standard deviation normalization algorithm. This embodiment of the invention does not specifically limit it.

[0079] S103. Determine the first equivalent capacitor, the second equivalent capacitor, and the third equivalent capacitor based on the gate virtual charge, the drain virtual charge, the drain simulation voltage, the source simulation voltage, and the conversion factor.

[0080] Wherein, the first equivalent capacitance refers to the capacitance difference between the gate capacitance and the drain capacitance; the second equivalent capacitance refers to the capacitance difference between the gate capacitance and the source capacitance; and the third equivalent capacitance refers to the capacitance difference between the drain capacitance and the source capacitance. The conversion factor is determined based on the simulated drain voltage and the simulated source voltage, i.e.:

[0081] ;

[0082] in, Indicates the conversion factor; This represents the maximum voltage difference between the simulated drain voltage and the simulated source voltage. This represents the minimum voltage difference between the simulated drain voltage and the simulated source voltage.

[0083] Specifically, the derivative of the gate virtual charge with respect to the drain simulation voltage is calculated as the first derivative; based on the first derivative and the conversion factor, the first equivalent capacitance is determined using the following formula:

[0084] ;

[0085] Wherein, CGD represents the first equivalent capacitance; qg represents the gate virtual charge; This represents the simulated drain voltage; Denotes the first derivative; This represents the transformation coefficient, used to eliminate the effect of normalization on the first derivative.

[0086] Simultaneously, the derivative of the gate virtual charge with respect to the source simulated voltage is calculated as the second derivative; based on the second derivative, the second equivalent capacitance is obtained using the following formula:

[0087] ;

[0088] Wherein, CGS represents the second equivalent capacitance; Indicates the simulated source voltage; The second derivative is represented by ; round() is the rounding function.

[0089] Simultaneously, the derivative of the drain virtual charge with respect to the source simulated voltage is calculated as the third derivative; based on the third derivative, the third equivalent capacitance is obtained using the following formula:

[0090] ;

[0091] Where CDS represents the third equivalent capacitance; qd represents the drain virtual charge; This represents the third derivative.

[0092] S104. Based on the gate simulation voltage, drain simulation voltage, source simulation voltage, first equivalent capacitance, second equivalent capacitance, and third equivalent capacitance, determine the target gate current, target drain current, and target source current of the target GaN device.

[0093] Among them, the target gate current refers to the actual current of the gate of the target GaN device; the target drain current refers to the actual current of the drain of the target GaN device; and the target source current refers to the actual current of the source of the target GaN device.

[0094] Specifically, based on the gate simulation voltage, drain simulation voltage, source simulation voltage, first equivalent capacitance, second equivalent capacitance, and third equivalent capacitance, the target gate current, target drain current, and target source current of the target GaN device are determined using a preset current calculation algorithm.

[0095] S105. Based on the target gate current, target drain current and target source current, update the original device model corresponding to the target GaN device to obtain the target device model, and perform AC simulation on the target GaN device based on the target device model and the preset test circuit.

[0096] The original device model refers to the device simulation model of the target GaN device determined based on the traditional GaN device AC simulation method. The target device model refers to the device simulation model obtained by updating the original device model corresponding to the target GaN device.

[0097] Specifically, the gate current in the original device model corresponding to the target GaN device is updated to the target gate current, the drain current is updated to the target drain current, and the source current is updated to the target source current, thus obtaining the target device model. Then, the target device model is imported into the Virtuoso environment to generate the target device symbol. The target device symbol is then placed in a pre-set test circuit, and AC simulation of the target GaN device is performed according to the pre-set scan frequency, scan mode, and output variables in the test circuit. Here, the target device symbol refers to the graphical symbol created for the target device model in the Virtuoso environment.

[0098] The technical solution of this invention involves obtaining the simulated gate voltage, drain voltage, and source voltage of the target GaN device; determining the virtual gate charge and virtual drain charge of the target GaN device based on the simulated gate voltage, drain voltage, and source voltage, using a trained charge determination model; determining the first equivalent capacitance, second equivalent capacitance, and third equivalent capacitance based on the virtual gate charge, virtual drain charge, simulated drain voltage, simulated source voltage, and conversion coefficient; determining the target gate current, target drain current, and target source current of the target GaN device based on the simulated gate voltage, drain voltage, source voltage, first equivalent capacitance, second equivalent capacitance, and third equivalent capacitance; updating the original device model corresponding to the target GaN device based on the target gate current, target drain current, and target source current to obtain the target device model; and performing AC simulation on the target GaN device based on the target device model and a preset test circuit. Compared to traditional GaN device AC simulation methods, the above-described technical solution retains the efficient modeling approach of outputting virtual charge through a neural network model (i.e., a trained charge determination model). Furthermore, by converting the virtual charge into an equivalent capacitance, it directly determines the target gate current, target drain current, and target source current of the target GaN device based on the equivalent capacitance and voltage. This bypasses the charge-time derivative step in traditional GaN device AC simulation methods, avoiding simulation distortion, shortening simulation time, and improving the simulation efficiency of GaN devices. Simultaneously, for different types and voltage levels of GaN devices, only the simulated gate voltage, drain voltage, and source voltage need to be changed to obtain the corresponding device model, eliminating the need to re-derive the device model. This shortens the adaptation time for GaN devices and reduces the adaptation cost of GaN device AC simulation.

[0099] Example 2:

[0100] Figure 2 This is a flowchart of an AC simulation method for a GaN device provided in Embodiment 2 of the present invention. Based on the above embodiments, this embodiment further optimizes the process of "determining the target gate current, target drain current, and target source current of the target GaN device based on the gate simulation voltage, drain simulation voltage, source simulation voltage, first equivalent capacitance, second equivalent capacitance, and third equivalent capacitance," providing an optional implementation scheme. It should be noted that parts not detailed in this embodiment can be referred to in other embodiments. Figure 2 As shown, the method includes:

[0101] S201. Obtain the simulated gate voltage, simulated drain voltage, and simulated source voltage of the target GaN device.

[0102] S202. Based on the gate simulation voltage, drain simulation voltage, and source simulation voltage, and using the trained charge determination model, determine the gate virtual charge and drain virtual charge of the target GaN device.

[0103] S203. Determine the first equivalent capacitance, the second equivalent capacitance, and the third equivalent capacitance based on the gate virtual charge, the drain virtual charge, the drain simulation voltage, the source simulation voltage, and the conversion factor.

[0104] S204. Determine the first voltage difference based on the gate simulation voltage and the source simulation voltage.

[0105] Here, the first voltage difference refers to the voltage difference between the simulated gate voltage and the simulated source voltage. Specifically, based on the simulated gate voltage and the simulated source voltage, the first voltage difference is determined using a preset voltage acquisition function, such as the V(port1,port2) function.

[0106] ;

[0107] Where VGS represents the first voltage difference; In this context, "gate" represents the simulated gate voltage, and "source" represents the simulated source voltage.

[0108] S205. Determine the second voltage difference based on the simulated gate voltage and the simulated drain voltage.

[0109] The second voltage difference refers to the voltage difference between the simulated gate voltage and the simulated drain voltage. Specifically, based on the simulated gate voltage and the simulated drain voltage, the second voltage difference is determined using a preset voltage acquisition function, such as the V(port1,port2) function.

[0110] ;

[0111] Wherein, VGD represents the second voltage difference; In this context, "gate" represents the simulated gate voltage, and "drain" represents the simulated drain voltage.

[0112] S206. Determine the third voltage difference based on the simulated drain voltage and the simulated source voltage.

[0113] The third voltage difference refers to the voltage difference between the simulated drain voltage and the simulated source voltage. Specifically, based on the simulated drain and source voltages, the third voltage difference is determined using a preset voltage acquisition function, such as the V(port1,port2) function.

[0114] ;

[0115] Where VDS represents the third voltage difference; In this context, "drain" represents the simulated drain voltage, and "source" represents the simulated source voltage.

[0116] S207. Based on the first voltage difference, the second voltage difference, the third voltage difference, the first equivalent capacitance, the second equivalent capacitance, and the third equivalent capacitance, determine the target gate current, the target drain current, and the target source current of the target GaN device.

[0117] Specifically, the gate-source current is determined based on the first voltage difference and the second equivalent capacitance; the gate-drain current is determined based on the second voltage difference and the first equivalent capacitance; the drain-source current is determined based on the third voltage difference and the third equivalent capacitance; the target gate current of the target GaN device is determined based on the gate-source current and the gate-drain current; the target drain current of the target GaN device is determined based on the gate-drain current and the drain-source current; and the target source current of the target GaN device is determined based on the gate-source current and the drain-source current.

[0118] Among them, gate-source current refers to the current that leaks between the gate and source of the target GaN device through parasitic capacitance; gate-drain current refers to the current that leaks between the gate and drain of the target GaN device through parasitic capacitance; and drain-source current refers to the current that flows between the drain and source of the target GaN device when the device is turned on.

[0119] Specifically, based on the first voltage difference and the second equivalent capacitance, the gate-source current is determined using the following formula:

[0120] ;

[0121] in, VGS represents the gate-source current; CGS represents the first voltage difference; and CGS represents the second equivalent capacitance. Indicates calculation The derivative with respect to time; This represents the amount of charge stored in the gate-source capacitance. Based on the second voltage difference and the first equivalent capacitance, the gate-leakage current is determined using the following formula:

[0122] ;

[0123] in, VGD represents the gate-drain current; VGD represents the second voltage difference; CGD represents the first equivalent capacitance. Indicates calculation The derivative with respect to time; This represents the amount of charge stored in the gate-drain capacitance. Based on the third voltage difference and the third equivalent capacitance, the drain-source current is determined using the following formula:

[0124] ;

[0125] in, VDS represents the drain-source current; CDS represents the third voltage difference; and CDS represents the third equivalent capacitance. Indicates calculation The derivative with respect to time; This indicates the amount of charge stored in the drain-source capacitance.

[0126] Then, the algebraic sum of the gate-source current and the gate-drain current is taken as the target gate current of the target GaN device, that is:

[0127] ;

[0128] in, This indicates the target gate current of the target GaN device; Indicates the gate-source current; This represents the gate-drain current. Then, the algebraic sum of the gate-drain current and the drain-source current is taken as the target drain current of the target GaN device:

[0129] ;

[0130] in, This represents the target drain current of the target GaN device; Indicates the gate leakage current; This represents the drain-source current. Then, the algebraic sum of the gate-source current and the drain-source current is used as the target source current for the target GaN device:

[0131] ;

[0132] in, This represents the target source current of the target GaN device; Indicates the gate-source current; This represents the drain-source current.

[0133] S208. Based on the target gate current, target drain current and target source current, update the original device model corresponding to the target GaN device to obtain the target device model, and perform AC simulation on the target GaN device based on the target device model and the preset test circuit.

[0134] The technical solution of this invention involves obtaining the simulated gate voltage, drain voltage, and source voltage of a target GaN device; determining the virtual gate charge and drain charge of the target GaN device based on the simulated gate voltage, drain voltage, and source voltage, using a trained charge determination model; determining the first equivalent capacitance, second equivalent capacitance, and third equivalent capacitance based on the virtual gate charge, drain charge, drain voltage, source voltage, and conversion factor; determining the first voltage difference based on the simulated gate voltage and source voltage; and determining the first voltage difference based on the simulated gate voltage and drain voltage. The simulation process involves: simulating voltage to determine the second voltage difference; determining the third voltage difference based on the simulated drain and source voltages; determining the target gate current, target drain current, and target source current of the target GaN device based on the first, second, and third voltage differences, the first equivalent capacitance, the second equivalent capacitance, and the third equivalent capacitance; updating the original device model corresponding to the target GaN device based on the target gate current, target drain current, and target source current to obtain the target device model; and performing AC simulation on the target GaN device based on the target device model and a pre-set test circuit. Compared to traditional GaN device AC simulation methods, this approach retains the efficient modeling method of outputting virtual charge through a neural network model (i.e., a trained charge determination model). By converting the virtual charge into equivalent capacitance, and directly determining the target gate current, target drain current, and target source current of the target GaN device based on the derivative of the product between the equivalent capacitance and the voltage difference with respect to time, this approach skips the charge-time derivative step in traditional GaN device AC simulation methods, avoiding simulation distortion, shortening simulation time, and improving the simulation efficiency of GaN devices. Meanwhile, for different types and voltage levels of GaN devices, only the gate simulation voltage, drain simulation voltage, and source simulation voltage of the GaN device need to be changed to obtain the corresponding device model. There is no need to re-derive the device model, which shortens the adaptation time of GaN devices and reduces the adaptation cost of GaN device AC simulation.

[0135] Example 3:

[0136] Figure 3 This is a schematic diagram of a GaN device AC simulation device provided in Embodiment 3 of the present invention. This embodiment is applicable to the AC simulation of GaN devices. The device can be implemented in hardware and / or software and can be configured in electronic devices. Figure 3 As shown, the device includes:

[0137] The device voltage acquisition module 301 is used to acquire the gate simulation voltage, drain simulation voltage and source simulation voltage of the target GaN device;

[0138] The charge determination module 302 is used to determine the gate virtual charge and drain virtual charge of the target GaN device based on the gate simulation voltage, drain simulation voltage, and source simulation voltage, and according to a trained charge determination model; the gate virtual charge is the gate charge of the target GaN device obtained through the trained charge determination model; the drain virtual charge is the drain charge of the target GaN device obtained through the trained charge determination model.

[0139] The equivalent capacitance determination module 303 is used to determine the first equivalent capacitance, the second equivalent capacitance, and the third equivalent capacitance based on the gate virtual charge, the drain virtual charge, the drain simulation voltage, the source simulation voltage, and the conversion factor.

[0140] The device current determination module 304 is used to determine the target gate current, target drain current and target source current of the target GaN device based on the gate simulation voltage, drain simulation voltage, source simulation voltage, first equivalent capacitance, second equivalent capacitance and third equivalent capacitance.

[0141] The device AC simulation module 305 is used to update the original device model corresponding to the target GaN device based on the target gate current, target drain current and target source current to obtain the target device model, and to perform AC simulation on the target GaN device based on the target device model and a preset test circuit.

[0142] The technical solution of this invention involves obtaining the simulated gate voltage, drain voltage, and source voltage of a target GaN device; determining the virtual gate charge and virtual drain charge of the target GaN device based on the simulated gate voltage, drain voltage, and source voltage, using a trained charge determination model; the virtual gate charge is the gate charge of the target GaN device obtained through the trained charge determination model; the virtual drain charge is the drain charge of the target GaN device obtained through the trained charge determination model; determining the first equivalent capacitance, second equivalent capacitance, and third equivalent capacitance based on the virtual gate charge, virtual drain charge, simulated drain voltage, simulated source voltage, and conversion factor; determining the target gate current, target drain current, and target source current of the target GaN device based on the simulated gate voltage, drain voltage, simulated source voltage, first equivalent capacitance, second equivalent capacitance, and third equivalent capacitance; updating the original device model corresponding to the target GaN device based on the target gate current, target drain current, and target source current to obtain the target device model; and performing AC simulation on the target GaN device based on the target device model and a preset test circuit. Compared to traditional GaN device AC simulation methods, the above-described technical solution retains the efficient modeling approach of outputting virtual charge through a neural network model (i.e., a trained charge determination model). Furthermore, by converting the virtual charge into an equivalent capacitance, it directly determines the target gate current, target drain current, and target source current of the target GaN device based on the equivalent capacitance and voltage. This bypasses the charge-time derivative step in traditional GaN device AC simulation methods, avoiding simulation distortion, shortening simulation time, and improving the simulation efficiency of GaN devices. Simultaneously, for different types and voltage levels of GaN devices, only the simulated gate voltage, drain voltage, and source voltage need to be changed to obtain the corresponding device model, eliminating the need to re-derive the device model. This shortens the adaptation time for GaN devices and reduces the adaptation cost of GaN device AC simulation.

[0143] Optionally, the equivalent capacitance determination module 303 is specifically used for:

[0144] Calculate the derivative of the gate virtual charge with respect to the drain simulation voltage, and use it as the first derivative;

[0145] Based on the first derivative and the conversion coefficient, the first equivalent capacitance is determined using the following formula:

[0146] ;

[0147] Wherein, CGD represents the first equivalent capacitance; qg represents the gate virtual charge; This represents the simulated drain voltage; Denotes the first derivative; Indicates the conversion factor;

[0148] Calculate the derivative of the gate virtual charge with respect to the source simulated voltage, and use it as the second derivative;

[0149] Based on the second derivative, the second equivalent capacitance can be obtained using the following formula:

[0150] ;

[0151] Wherein, CGS represents the second equivalent capacitance; Indicates the simulated source voltage; The function represents the second derivative; round() represents the rounding function.

[0152] Calculate the derivative of the drain virtual charge with respect to the source simulated voltage, and use it as the third derivative;

[0153] Based on the third derivative, the third equivalent capacitance can be obtained using the following formula:

[0154] ;

[0155] Where CDS represents the third equivalent capacitance; qd represents the drain virtual charge; This represents the third derivative.

[0156] Optionally, the device current determination module 304 includes:

[0157] The voltage difference determination unit is used to determine a first voltage difference based on the gate simulation voltage and the source simulation voltage; determine a second voltage difference based on the gate simulation voltage and the drain simulation voltage; and determine a third voltage difference based on the drain simulation voltage and the source simulation voltage.

[0158] The device current determination unit is used to determine the target gate current, target drain current and target source current of the target GaN device based on the first voltage difference, the second voltage difference, the third voltage difference, the first equivalent capacitance, the second equivalent capacitance and the third equivalent capacitance.

[0159] Optional, a device current determination unit, specifically used for:

[0160] The gate-source current is determined based on the first voltage difference and the second equivalent capacitance;

[0161] The gate leakage current is determined based on the second voltage difference and the first equivalent capacitance;

[0162] Determine the drain-source current based on the third voltage difference and the third equivalent capacitance;

[0163] The target gate current of the target GaN device is determined based on the gate-source current and the gate-drain current.

[0164] Determine the target drain current of the target GaN device based on the gate drain current and drain-source current;

[0165] The target source current of the target GaN device is determined based on the gate-source current and drain-source current.

[0166] The GaN device AC simulation device provided in this embodiment of the invention can execute the GaN device AC simulation method provided in any embodiment of the invention, and has the corresponding functional modules and beneficial effects for executing each GaN device AC simulation method.

[0167] According to embodiments of the present invention, the present invention also provides an electronic device, a readable storage medium, and a computer program product.

[0168] Example 4:

[0169] Figure 4 A schematic diagram of an electronic device 10, which can be used to implement embodiments of the present invention, is shown. The electronic device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as personal digital processors, cellular phones, smartphones, wearable devices (e.g., helmets, glasses, watches, etc.), and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely illustrative and are not intended to limit the implementation of the invention described and / or claimed herein.

[0170] like Figure 4 As shown, the electronic device 10 includes at least one processor 11 and a memory, such as a read-only memory (ROM) 12 or a random access memory (RAM) 13, communicatively connected to the at least one processor 11. The memory stores computer programs executable by the at least one processor. The processor 11 can perform various appropriate actions and processes based on the computer program stored in the ROM 12 or loaded into the RAM 13 from storage unit 18. The RAM 13 can also store various programs and data required for the operation of the electronic device 10. The processor 11, ROM 12, and RAM 13 are interconnected via a bus 14. An input / output (I / O) interface 15 is also connected to the bus 14.

[0171] Multiple components in electronic device 10 are connected to I / O interface 15, including: input unit 16, such as keyboard, mouse, etc.; output unit 17, such as various types of displays, speakers, etc.; storage unit 18, such as disk, optical disk, etc.; and communication unit 19, such as network card, modem, wireless transceiver, etc. Communication unit 19 allows electronic device 10 to exchange information / data with other devices through computer networks such as the Internet and / or various telecommunications networks.

[0172] Processor 11 can be a variety of general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of processor 11 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various special-purpose artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. Processor 11 performs the various methods and processes described above, such as GaN device AC simulation methods.

[0173] In some embodiments, the GaN device AC simulation method can be implemented as a computer program tangibly contained in a computer-readable storage medium, such as storage unit 18. In some embodiments, part or all of the computer program can be loaded and / or installed on electronic device 10 via ROM 12 and / or communication unit 19. When the computer program is loaded into RAM 13 and executed by processor 11, one or more steps of the GaN device AC simulation method described above can be performed. Alternatively, in other embodiments, processor 11 can be configured to execute the GaN device AC simulation method by any other suitable means (e.g., by means of firmware).

[0174] Various embodiments of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field-programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), application-specific standard products (ASSPs), systems-on-a-chip (SoCs), payload-programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various embodiments may include implementations in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which may be a dedicated or general-purpose programmable processor, capable of receiving data and instructions from a storage system, at least one input device, and at least one output device, and transmitting data and instructions to the storage system, the at least one input device, and the at least one output device.

[0175] Computer programs used to implement the methods of the present invention may be written in any combination of one or more programming languages. These computer programs may be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device, such that when executed by the processor, the computer programs cause the functions / operations specified in the flowcharts and / or block diagrams to be performed. The computer programs may be executed entirely on a machine, partially on a machine, or as a standalone software package, partially on a machine and partially on a remote machine, or entirely on a remote machine or server.

[0176] In the context of this invention, a computer-readable storage medium can be a tangible medium that may contain or store a computer program for use by or in conjunction with an instruction execution system, apparatus, or device. A computer-readable storage medium may include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination thereof. Alternatively, a computer-readable storage medium may be a machine-readable signal medium. More specific examples of machine-readable storage media include electrical connections based on one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fibers, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination thereof.

[0177] To provide interaction with a user, the systems and techniques described herein can be implemented on an electronic device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and pointing device (e.g., a mouse or trackball) through which the user provides input to the electronic device. Other types of devices can also be used to provide interaction with the user; for example, feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including sound input, voice input, or tactile input).

[0178] The systems and technologies described herein can be implemented in computing systems that include backend components (e.g., as data servers), or middleware components (e.g., application servers), or frontend components (e.g., user computers with graphical user interfaces or web browsers through which users can interact with implementations of the systems and technologies described herein), or any combination of such backend, middleware, or frontend components. The components of the system can be interconnected via digital data communication of any form or medium (e.g., communication networks). Examples of communication networks include local area networks (LANs), wide area networks (WANs), blockchain networks, and the Internet.

[0179] A computing system can include clients and servers. Clients and servers are generally located far apart and typically interact through communication networks. The client-server relationship is created by computer programs running on the respective computers and having a client-server relationship with each other. The server can be a cloud server, also known as a cloud computing server or cloud host, which is a hosting product within the cloud computing service system to address the shortcomings of traditional physical hosts and VPS services, such as high management difficulty and weak business scalability.

[0180] It should be understood that the various forms of processes shown above can be used, with steps reordered, added, or deleted. For example, the steps described in this invention can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this invention can be achieved, and this is not limited herein.

[0181] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A method of AC simulation of a GaN device, characterized by, The method comprises: obtaining a gate simulation voltage, a drain simulation voltage and a source simulation voltage of a target GaN device; determining a gate virtual charge and a drain virtual charge of the target GaN device based on a trained charge determination model according to the gate simulation voltage, the drain simulation voltage and the source simulation voltage; the gate virtual charge is a gate charge of the target GaN device obtained by the trained charge determination model; and the drain virtual charge is a drain charge of the target GaN device obtained by the trained charge determination model; determining a first equivalent capacitance, a second equivalent capacitance and a third equivalent capacitance according to the gate virtual charge, the drain virtual charge, the drain simulation voltage, the source simulation voltage and a conversion coefficient; determining a target gate current, a target drain current and a target source current of the target GaN device according to the gate simulation voltage, the drain simulation voltage, the source simulation voltage, the first equivalent capacitance, the second equivalent capacitance and the third equivalent capacitance; updating an original device model corresponding to the target GaN device according to the target gate current, the target drain current and the target source current to obtain a target device model, and performing AC simulation on the target GaN device based on a preset test circuit according to the target device model; wherein determining a first equivalent capacitance, a second equivalent capacitance and a third equivalent capacitance according to the gate virtual charge, the drain virtual charge, the drain simulation voltage, the source simulation voltage and a conversion coefficient comprises: calculating a derivative of the gate virtual charge with respect to the drain simulation voltage as a first derivative; determining the first equivalent capacitance according to the first derivative and the conversion coefficient through the following formula: ； wherein CGD represents a first equivalent capacitance; qg represents a gate virtual charge; represents a drain emulated voltage; represents a first derivative; represents a conversion coefficient; calculating a derivative of the gate virtual charge with respect to the source simulation voltage as a second derivative; determining the second equivalent capacitance according to the second derivative through the following formula: ； where CGS represents the second equivalent capacitance; represents the source emulation voltage; represents the second derivative; round() represents the rounding function; calculating a derivative of the drain virtual charge with respect to the source simulation voltage as a third derivative; determining the third equivalent capacitance according to the third derivative through the following formula: ； where CDS represents a third equivalent capacitance; qd represents a drain virtual charge; represents a third derivative.

2. The method of claim 1, wherein, the conversion coefficient is determined according to the drain simulation voltage and the source simulation voltage.

3. The method of claim 1, wherein, determining a target gate current, a target drain current and a target source current of the target GaN device according to the gate simulation voltage, the drain simulation voltage, the source simulation voltage, the first equivalent capacitance, the second equivalent capacitance and the third equivalent capacitance comprises: determining a first voltage difference according to the gate simulation voltage and the source simulation voltage; determining a second voltage difference according to the gate simulation voltage and the drain simulation voltage; determining a third voltage difference according to the drain simulation voltage and the source simulation voltage; determining a target gate current, a target drain current and a target source current of the target GaN device according to the first voltage difference, the second voltage difference, the third voltage difference, the first equivalent capacitance, the second equivalent capacitance and the third equivalent capacitance.

4. The method of claim 3, wherein, The determining the target gate current, the target drain current and the target source current of the target GaN device according to the first voltage difference, the second voltage difference, the third voltage difference, the first equivalent capacitance, the second equivalent capacitance and the third equivalent capacitance comprises: determining a gate-source current according to the first voltage difference and the second equivalent capacitance; determining a gate-drain current according to the second voltage difference and the first equivalent capacitance; determining a drain-source current according to the third voltage difference and the third equivalent capacitance; determining the target gate current of the target GaN device according to the gate-source current and the gate-drain current; determining the target drain current of the target GaN device according to the gate-drain current and the drain-source current; determining the target source current of the target GaN device according to the gate-source current and the drain-source current.

5. An AC simulation device for GaN devices, characterized by, comprise: a device voltage acquisition module, configured to acquire gate simulation voltage, drain simulation voltage and source simulation voltage of a target GaN device; a charge determination module, configured to determine gate virtual charge and drain virtual charge of the target GaN device based on a trained charge determination model according to the gate simulation voltage, the drain simulation voltage and the source simulation voltage; the gate virtual charge is the gate charge of the target GaN device obtained by the trained charge determination model; and the drain virtual charge is the drain charge of the target GaN device obtained by the trained charge determination model; an equivalent capacitance determination module, configured to determine first equivalent capacitance, second equivalent capacitance and third equivalent capacitance according to the gate virtual charge, the drain virtual charge, the drain simulation voltage, the source simulation voltage and a conversion coefficient; a device current determination module, configured to determine target gate current, target drain current and target source current of the target GaN device according to the gate simulation voltage, the drain simulation voltage, the source simulation voltage, the first equivalent capacitance, the second equivalent capacitance and the third equivalent capacitance; a device AC simulation module, configured to update an original device model corresponding to the target GaN device to obtain a target device model according to the target gate current, the target drain current and the target source current, and perform AC simulation on the target GaN device based on a preset test circuit according to the target device model; wherein the equivalent capacitance determination module is specifically configured to: calculate a derivative of the gate virtual charge with respect to the drain simulation voltage as a first derivative; determine the first equivalent capacitance according to the first derivative and a conversion coefficient through the following formula: ； wherein CGD represents a first equivalent capacitance; qg represents a gate virtual charge; represents a drain emulated voltage; represents a first derivative; represents a conversion coefficient; calculate a derivative of the gate virtual charge with respect to the source simulation voltage as a second derivative; obtain the second equivalent capacitance according to the second derivative through the following formula: ； where CGS represents the second equivalent capacitance; represents the source simulation voltage; represents the second derivative; round() represents the rounding function; calculate a derivative of the drain virtual charge with respect to the source simulation voltage as a third derivative; obtain the third equivalent capacitance according to the third derivative through the following formula: ； where CDS represents a third equivalent capacitance; qd represents a drain virtual charge; represents a third derivative.

6. An electronic device, comprising: The electronic device comprises: at least one processor; and a memory connected in communication with the at least one processor; wherein The memory stores a computer program executable by the at least one processor, and the computer program is executed by the at least one processor to enable the at least one processor to perform the GaN device AC simulation method in any one of claims 1-4.

7. A computer-readable storage medium, characterized in that, The computer readable storage medium stores computer instructions for enabling the processor to implement the GaN device AC simulation method in any one of claims 1-4 when executed.

8. A computer program product, characterised in that, The computer program is executed by the processor to implement the GaN device AC simulation method in any one of claims 1-4.

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