A bias circuit of a VCSEL laser and a control method thereof

Abstract

The application discloses a bias circuit of a VCSEL laser and a control method thereof, and relates to the technical field of optical communication, which comprises a laser driver bias circuit, a high-voltage bias circuit and a power supply. The traditional bias circuit is used for stabilizing the working current and output power of the laser, and the high-voltage bias circuit is composed of a gate dynamic bias circuit, a switch tube and a drain dynamic bias circuit. In the gate dynamic bias circuit, a voltage dividing network and a constant current source are arranged to generate a controllable bias voltage, so that the safe conduction and rapid cut-off of the switch tube are realized. In the drain dynamic bias circuit, a voltage dividing branch is arranged to provide a stable bias voltage for the power tube, so that the device voltage is maintained in a safe voltage withstand range under the condition of a high power supply voltage. The auxiliary acceleration branch is used to suppress the charging and discharging delay of the gate parasitic capacitance, the high-speed cut-off and rapid response of the switch tube are realized, and the voltage withstand safety margin and long-term reliability of the VCSEL driving circuit are improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of optical communication technology, and particularly relates to a bias circuit of a VCSEL laser and a control method thereof. BACKGROUND

[0002] In the fields of high-speed optical communication and precise printing detection, vertical cavity surface emitting lasers (VCSEL) are widely used in optical signal output and detection systems due to high modulation rate, low power consumption and good beam quality. A conventional VCSEL driving circuit usually adopts a constant current source combined with an error amplifier structure to stabilize the bias current of the laser and realize modulation output. The circuit maintains the output stable through reference voltage comparison and power tube control mechanism, and combines multi-waveband imaging and high dynamic range fusion technology to coordinate the emission power of the light source and the response characteristics of the optical detection system, so as to meet the application requirements of digital printing quality detection and high-speed optical interconnection. Such bias circuit has simple structure and high linearity, and has become one of the mainstream design schemes of VCSEL driving.

[0003] However, the conventional bias driving method still has two limitations under high power voltage and fast switching conditions: first, the drain-source voltage difference of the power tube is large when the laser is off, which is easy to exceed the rated voltage range of the device, affecting the long-term reliability of the circuit; second, the response speed of the gate is limited due to the charging and discharging rate of the parasitic capacitance of the power tube, resulting in increased switching delay of the switching tube and system response time; such structure is stable under low voltage conditions, but in the high source high voltage scene, the dynamic safety margin of the bias control is insufficient, thereby limiting the high-speed driving of the laser and the improvement of the system integration performance. SUMMARY

[0004] In view of the above existing problems, the present application is proposed.

[0005] Therefore, the present application provides a bias circuit of a VCSEL laser and a control method thereof, which solves the problems of insufficient power tube voltage protection and limited switching response speed of the switching tube under high source voltage in the prior art.

[0006] To solve the above technical problems, the present application provides the following technical solutions:

[0007] In a first aspect, the present application provides a bias circuit of a VCSEL laser, which comprises a laser driver bias circuit, a high-voltage bias circuit and a power supply ;

[0008] The laser driver bias circuit and the high-voltage bias circuit are connected in series between the power supply and the ground.

[0009] The high-voltage bias circuit comprises a gate dynamic bias circuit, a switching tube and a drain dynamic bias circuit;

[0010] the gate of the switch tube is connected with one end of the gate dynamic bias circuit, the drain of the switch tube is connected with one end of the drain dynamic bias circuit, the source of the switch tube is connected with the power supply ;

[0011] the other end of the gate dynamic bias circuit is connected with the power supply , and the other end of the drain dynamic bias circuit is connected with the power supply .

[0012] As a preferred scheme of the bias circuit of the VCSEL laser of the present application, wherein: the laser driver bias circuit comprises an error amplifier, a power tube , a matching resistor , a laser and a modulation circuit.

[0013] As a preferred scheme of the bias circuit of the VCSEL laser of the present application, wherein: the high-voltage bias circuit is used to maintain the power tube in a safe voltage range

[0014] As a preferred scheme of the bias circuit of the VCSEL laser of the present application, wherein: the gate dynamic bias circuit further comprises, one end of the resistor is connected with the power supply , the other end of the resistor is connected with one end of the resistor , the other end of the resistor is connected with the ground, forming a first voltage dividing circuit, generating a bias voltage , the bias voltage is used as the gate bias voltage of the switch tube and the switch tube ;

[0015] One end of the resistor is connected with the power supply , the other end of the resistor is connected with the drain of the switch tube , the source of the switch tube is connected with the drain of the switch tube , the source of the switch tube is connected with one end of the constant current source , the other end of the constant current source is connected with the ground, the gate of the switch tube is connected with one end of the inverter , one end of the inverter The other end is connected to the control signal DIS, forming a second voltage divider circuit to generate a switching transistor. Gate bias voltage ;

[0016] The resistor One end is connected to the power supply Connection, resistor The other end is connected to the switching transistor Drain connection, switching transistor Source and switch Drain connection, switching transistor The source and constant current source One end is connected to a constant current source. The other end is connected to the ground, and the switching transistor The gate connection control signal DIS constitutes the switching transistor. The conducting circuit generates a switching transistor. Gate bias voltage;

[0017] The switching transistor Source and power supply Connection, switching transistor Drain and switching transistor The gate connection forms a switching transistor. The gate cutoff acceleration circuit generates a switching transistor. The gate cutoff voltage;

[0018] The switching transistor and switching transistor gate and resistor The other end is connected;

[0019] The switching transistor gate and resistor The other end is connected.

[0020] As a preferred embodiment of the bias circuit for the VCSEL laser described in this invention, the drain dynamic bias circuit includes a resistor. and resistance .

[0021] As a preferred embodiment of the bias circuit for the VCSEL laser of the present invention, the drain dynamic bias circuit further includes the resistor. One end is connected to the power supply Connection, resistor The other end is connected to the resistor One end is connected to the resistor. The other end is connected to ground, forming a third voltage divider circuit to generate a bias voltage. Bias voltage As a switch. The drain voltage;

[0022] The switching transistor Drain and resistor The other end is connected;

[0023] The switching transistor drain and power transistor The drain connection.

[0024] Secondly, the present invention provides a control method for the bias circuit of a VCSEL laser, comprising defining a control signal DIS, wherein when DIS is low, the gate dynamic bias circuit turns on the switching transistor. and cut off the switching transistor Obtain the switching transistor Gate bias voltage ;

[0025] By setting a constant current source and resistance Get the value of the switching transistor. Gate-source voltage ;

[0026] When DIS is high, the gate dynamic bias circuit cuts off the switching transistor. , conduction switch tube and turn on the switching transistor. ;

[0027] Through the switching transistor The gate cutoff acceleration circuit for the switching transistor gate parasitic capacitance Charge the switching transistor. Deadline;

[0028] When the switching transistor After termination, disconnect the power transistor. With power supply The connection circuit is converted into a drain dynamic bias circuit to the power transistor. The source provides a bias voltage .

[0029] In a preferred embodiment of the control method for the bias circuit of the VCSEL laser described in this invention, the defined control signal DIS includes defining DIS as a turn-off signal, defining DIS=0 as a low level, and defining the laser... Normal startup, DIS=1 is defined as high level, laser Normal shutdown.

[0030] As a preferred solution of the control method of the bias circuit of the VCSEL laser of the present application, the gate dynamic bias circuit comprises a resistor and a resistor to form a first voltage dividing circuit.

[0031] By setting the resistance ratio of the resistor and the resistor , the bias voltage is obtained.

[0032] The present application has the following advantages: by setting the gate dynamic bias circuit and the drain dynamic bias circuit in the bias circuit of the VCSEL laser, the voltage of the power tube and the switching tube is always in the safe voltage range under high power voltage; by setting the auxiliary acceleration branch to quickly charge the gate parasitic capacitance of the switching tube , the high-speed turn-off of the switching tube and the fast response of the circuit are realized; by setting the voltage dividing protection network in the gate dynamic bias circuit, the gate potential of the internal switching tube and the switching tube is limited, thereby improving the voltage safety margin and long-term reliability of the entire bias control circuit. BRIEF DESCRIPTION OF DRAWINGS

[0033] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiment description. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0034] Fig. 1 is a flow chart of the high-voltage bias circuit of the VCSEL laser.

[0035] Fig. 2 is a bias circuit diagram of a traditional laser driver.

[0036] Fig. 3 is a specific implementation diagram of the high-voltage bias circuit of the VCSEL laser. DETAILED DESCRIPTION

[0037] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific embodiments of the present application will be described in detail below with reference to the drawings.

[0038] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. However, it will be apparent to one skilled in the art that the present application can be practiced without the specific details set forth in this description. In other instances, well-known methods, procedures, components, and circuits have not been described in detail so as not to unnecessarily obscure aspects of the present application.

[0039] It should also be noted that, as used herein, "the embodiment" refers to a particular embodiment of the application. A plurality of "embodiments" can be a combination of still further embodiments. Furthermore, characteristics described in connection with one embodiment can also be applied to other embodiments. Similarly, features described in connection with one or more of the examples described herein can be applied to any other embodiment, unless otherwise specified.

[0040] Reference will now be made to the drawings, in which Figs. 1-3 For one embodiment of the present application, the embodiment provides a bias circuit of a VCSEL laser and a control method thereof, including the following specific content:

[0041] Laser driver bias circuit, high voltage bias circuit and power supply .

[0042] As shown in Fig. 1 is a bias circuit of a VCSEL laser, specifically an integrated circuit applied to a high power supply voltage condition, including a laser driver bias circuit, a high voltage bias circuit and a power supply .

[0043] Among them, the laser driver bias circuit is composed of a conventional laser driver bias circuit.

[0044] As shown in Fig. 2 is a conventional laser driver bias circuit, which includes an error amplifier, a power tube , a matching resistor , a laser and a modulation circuit.

[0045] The inverting input terminal of the error amplifier is connected to a reference voltage , and the non-inverting input terminal of the error amplifier is connected to the output voltage node, wherein the output voltage node is located between the drain of the power tube and the lower end of the resistor , the output terminal of the error amplifier is connected to the gate of the power tube , for adjusting the conduction degree of the power tube , controlling the output voltage .

[0046] The drain of the power tube is connected to one end of the matching resistor , and the other end of the matching resistor The other end is connected to one end of the modulation circuit, and the other end of the modulation circuit is connected to ground. The matching resistor... The laser anode voltage is provided between the other end and one end of the modulation circuit. Node, laser anode voltage Nodes and Lasers One end is connected to the laser. The other end connects to the earth.

[0047] It should be noted that the error amplifier is used to power the transistor. The missing potentiometer clamp to the reference voltage Obtain the output voltage equal to reference voltage .

[0048] Based on traditional laser driver circuits and according to electrical principles, it is known that current flows through the matching resistor... The current is expressed as:

[0049] ;

[0050] in, This indicates the current through the matching resistor. This represents the bias current of the laser. This represents the bias current of the modulation circuit.

[0051] Based on traditional laser driver circuits and electrical principles, it is known that the power transistor... The drain voltage is expressed as:

[0052] ;

[0053] in, This indicates that the output voltage is controlled. Indicates the anode voltage of the laser. This indicates the matching resistor.

[0054] It should also be noted that the DIS signal is usually issued by the host computer controller and is used for logic control of the laser. The enabled state.

[0055] Define the control signal DIS as the off signal, and define DIS=0 as a low level for the laser. Normal startup, DIS=1 is defined as high level, laser Normal shutdown.

[0056] In a traditional laser driver bias circuit, when DIS=0, the laser... Turn on, laser anode voltage The typical range is 1.8 to 2.7V.

[0057] When DIS=1, the laser Off, reference voltage Forced to 0V, the current in the modulation circuit is 0mA, and the matching resistor... and laser No current in the middle ( <0.5V).

[0058] Furthermore, when the laser When enabled, to improve signal linearity, a relatively large current is often supplied to the modulation circuit and bias current (e.g., =20mA, =10mA); if =2.7V, then the power transistor The drain voltage, for example, is expressed as:

[0059] ;

[0060] Furthermore, to ensure the power transistor Sufficient voltage margin (approximately 200mV) is allowed, and the power supply voltage is usually set relatively high (greater than 4.5V).

[0061] However, traditional laser driver circuits cannot adapt to high source voltages because:

[0062] Under high source voltage conditions, when DIS=1, the laser... closure, = =0, power transistor The drain voltage, for example, is expressed as:

[0063] ;

[0064] power transistor drain and power transistor The voltage drop between the source and the source is represented by an example:

[0065] ;

[0066] Power transistor drain and power transistor The voltage drop between the source and the transistor indicates that, under high source voltage conditions, the power transistor... The voltage drop exceeded the rated withstand voltage of a typical 3.3V CMOS PMOS transistor (approximately 3.6V), causing reliability issues with the PMOS transistor under high source voltage conditions.

[0067] like Fig. 3As shown, to address the reliability issues of PMOS transistors under high source voltage conditions, a high-voltage bias circuit is provided. This high-voltage bias circuit includes a gate dynamic bias circuit and a switching transistor. And the drain dynamic bias circuit.

[0068] The gate dynamic bias circuit includes a switching transistor. Switching transistor Switching transistor Switching transistor Switching transistor ,resistance ,resistance ,resistance ,resistance Constant current source Constant current source and inverter .

[0069] Furthermore, resistance One end is connected to the power supply Connect, the other end of the resistor to the resistor One end is connected to the resistor. The other end is connected to ground, forming the first voltage divider circuit, which generates a bias voltage. Bias voltage As a switch. and switching transistor The gate bias voltage.

[0070] resistance One end is connected to the power supply Connection, resistor The other end is connected to the switching transistor Drain connection, switching transistor Source and switch Drain connection, switching transistor The source and constant current source One end is connected to a constant current source. The other end is connected to the ground, and the switching transistor Gate and inverter One end is connected to the inverter. The other end is connected to the control signal DIS, forming a second voltage divider circuit to generate a switching transistor. Gate bias voltage .

[0071] resistance One end is connected to the power supply Connection, resistor The other end is connected to the switching transistor Drain connection, switching transistor Source and switch Drain connection, switching transistor The source and constant current source One end is connected to a constant current source. The other end is connected to the ground, and the switching transistor The gate connection control signal DIS constitutes the switching transistor. The conducting circuit generates a switching transistor. The gate bias voltage.

[0072] Switching transistor Source and power supply Connection, switching transistor Drain and switching transistor The gate connection forms a switching transistor. The gate cutoff acceleration circuit generates a switching transistor. The gate cutoff voltage.

[0073] Switching transistor and switching transistor gate and resistor The other end is connected.

[0074] Switching transistor gate and resistor The other end is connected.

[0075] Furthermore, the control method for the gate dynamic bias circuit is specifically as follows (A1-A4):

[0076] A1: Define DIS=1 as the switching transistor. The turn-on signal is defined as DIS=0 for the switching transistor. The cutoff signal.

[0077] A2: Define DIS=0 as the switching transistor. The turn-on signal is defined as DIS=1 for the switching transistor. The cutoff signal.

[0078] A3: When DIS=0, the switching transistor In inverter Under the action of the switching transistor, it is turned on. Cut-off, based on the gate dynamic bias circuit, according to electrical principles, the switching transistor... Gate bias voltage , represented as:

[0079] ;

[0080] in, It is a constant current source.

[0081] Based on the gate dynamic bias circuit, and according to electrical principles, the switching transistor Gate-source on-state voltage , represented as:

[0082] ;

[0083] By setting a constant current source and resistance The value of can guarantee the switching transistor Full conduction does not exceed the rated withstand voltage.

[0084] For example, under 3.3V CMOS process conditions, it is possible to set =3.3V.

[0085] A4: When DIS=1, the switching transistor In inverter Cut off under the action of resistance The voltage drop across decreases, and the bias voltage decreases. The voltage increases.

[0086] Considering the switching transistor The size is relatively large, and the switching transistor is large. The gate has a large parasitic capacitance. This leads to bias voltage Slow charging affects the switching transistor. The gate is quickly turned off.

[0087] To accelerate the switching of transistors The gate is turned off, and the DIS signal causes the switching transistor to switch. The switching transistor that turns on and cuts off the auxiliary acceleration is activated. The switch transistor Gate cutoff acceleration circuit.

[0088] Based on switching transistor Gate cutoff acceleration circuit, switching transistor The gate-source bias voltage is set to Switching transistor The gate-source bias voltage is expressed as:

[0089] ;

[0090] For example, under 3.3V CMOS process conditions, it is possible to set ,make Fully conductive with no risk of overvoltage.

[0091] It should be noted that, considering the switching transistor Smaller size, switching transistor It can quickly conduct electricity through the switching transistor. The gate cutoff acceleration circuit for the switching transistor capacitor To enable rapid charging, thereby accelerating the switching of the transistor. The rise in the gate voltage causes the bias voltage to... Quickly reach power Voltage, causing the switching transistor The gate is cut off.

[0092] When the switching transistor After the cutoff, the power transistor Source and power supply The connection circuit is disconnected, and instead, the drain dynamic bias circuit provides the power.

[0093] It should also be noted that the gate dynamic bias circuit itself also has a withstand voltage protection function. The withstand voltage protection function of the gate dynamic bias circuit is provided by a resistor. With resistance The first voltage divider circuit, configured in series, is specifically used to generate a bias voltage. .

[0094] bias voltage , represented as:

[0095] ;

[0096] bias voltage Used for switching transistors and switching transistor The gate bias voltage.

[0097] Switching transistor and switching transistor It serves a protective function, used to prevent the switching transistor from... and switching transistor Overvoltage.

[0098] Switching transistor and switching transistor The drain voltages of the switching transistors are respectively... and switching transistor The gate voltage is limited to a maximum of the bias voltage. .

[0099] By setting the resistor and resistance Adjust the resistance ratio and bias voltage. This ensures that all switching transistors in the gate dynamic bias circuit are within a safe voltage withstand range.

[0100] It should also be noted that the switching transistor is automatically adjusted according to the state of the shutdown signal DIS through the gate dynamic bias circuit. The gate voltage enables a dynamic on-bias voltage to be provided when the laser is turned on, and automatically switches to a high-level off-bias when the laser is turned off, thereby achieving control over the power transistor. With switching transistor Dynamic control and safe switching of operating states; achieved by setting a constant current source. With resistance The auxiliary bias branch formed achieves the control of The rapid charging of the gate parasitic capacitance enables high-speed turn-off and fast response of the switching transistor, improving the modulation speed and real-time performance of the laser drive circuit; by constructing a resistor in the gate dynamic bias circuit... With resistance The first voltage divider circuit, as formed, enables control of the switching transistor. and switching transistor The gate potential is limited, thereby enabling multi-level overvoltage protection of the internal transistors and improving the safety margin of the overall circuit.

[0101] The drain dynamic bias circuit includes resistors and resistance .

[0102] Furthermore, resistance One end is connected to the power supply Connection, resistor The other end is connected to the resistor One end is connected to the resistor. The other end is connected to ground, forming a third voltage divider circuit to generate a bias voltage. Bias voltage As a switch. The drain voltage.

[0103] Switching transistor Drain and resistor The other end is connected.

[0104] Switching transistor drain and power transistor The drain connection.

[0105] Furthermore, the control method for the drain dynamic bias circuit is specifically B1:

[0106] B1: When DIS=1, the switching transistor Cut-off, switching transistor It exhibits a high resistance state.

[0107] To prevent power transistors The source is left floating, and the drain is dynamically biased as a switching transistor. Provide bias voltage .

[0108] bias voltage by resistance and resistance The third voltage dividing circuit is composed of resistance

[0109] bias voltage value, while ensuring that the power tube and the switch tube are within the safe voltage range of each other.

[0110] For example, the bias voltage is set to 0.5 power voltage, and by reasonably setting the resistance and resistance value ratio, different bias voltage values can be set.

[0111] It should be noted that by the drain dynamic bias circuit, a controllable drain bias voltage is established when the switch tube is off, and the power tube still maintains a safe drain-source potential in the off state of the laser, ensuring that both two-stage power transistors are within the safe voltage range in a high-voltage working environment.

[0112] It should be noted that by the high-voltage bias circuit, under the condition of wide power supply voltage, whether the laser is in the on (DIS=0) state or the laser is in the off (DIS=1) state, the high-voltage bias circuit itself and the laser core power tube can provide reliable voltage protection, ensuring that the laser always works in a safe area.

[0113] In summary, by setting the gate dynamic bias circuit and the drain dynamic bias circuit in the bias circuit of the VCSEL laser, the voltage of the power tube and the switch tube is always within the safe voltage range under high power supply voltage; by setting the auxiliary acceleration branch to quickly charge the gate parasitic capacitance of the switch tube , the high-speed turn-off of the switch tube and the fast response of the circuit are realized; by setting the voltage dividing protection network in the gate dynamic bias circuit, the gate potential of the internal switch tube and the switch tube is limited, thereby improving the voltage safety margin and long-term reliability of the entire bias control circuit.

[0114] It should be noted that the above examples are only used to illustrate the technical solutions of the present application but not limit the present application. Although the present application is described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present application can be modified or equivalently replaced, without departing from the spirit and scope of the technical solutions of the present application, which should be covered in the scope of the claims of the present application.

Claims

1. A bias circuit for a VCSEL laser, characterized by: including, a laser driver bias circuit, a high voltage bias circuit, and a power supply ; The laser driver bias circuit and the high voltage bias circuit are connected in series to a power supply Between the ground; The high-voltage bias circuit comprises a gate dynamic bias circuit, a switch tube and a drain dynamic bias circuit. The gate of the switch tube is connected with one end of the gate and gate dynamic bias circuit, the drain of the switch tube is connected with one end of the drain and drain dynamic bias circuit, the source of the switch tube is connected with the power supply . The other end of the gate dynamic bias circuit is connected with a power supply The other end of the drain dynamic bias circuit is connected with a power supply Connection; The gate dynamic biasing circuit comprises a switch tube , a switch tube , a switch tube , a switch tube , a switch tube , a resistor , a resistor , a resistor , a resistor , a constant current source , a constant current source , and an inverter ; The gate dynamic bias circuit also includes the resistor. One end is connected to the power supply Connect, the other end of the resistor to the resistor One end is connected to the resistor. The other end is connected to ground, forming the first voltage divider circuit, which generates a bias voltage. Bias voltage As a switch. and switching transistor Gate bias voltage; The resistor One end is connected to the power supply Connection, resistor The other end is connected to the switching transistor Drain connection, switching transistor Source and switch Drain connection, switching transistor The source and constant current source One end is connected to a constant current source. The other end is connected to the ground, and the switching transistor Gate and inverter One end is connected to the inverter. The other end is connected to the control signal DIS, forming a second voltage divider circuit to generate a switching transistor. Gate bias voltage ; the resistance one end is connected with a power supply the other end of the resistance is connected with the drain of a switch tube the source of the switch tube is connected with the drain of the switch tube the source of the switch tube is connected with one end of a constant current source the other end of the constant current source is connected with the ground the gate of the switch tube is connected with a control signal DIS to form the on circuit of the switch tube to generate the gate bias voltage of the switch tube The source of the switch tube is connected with the power supply , the drain of the switch tube is connected with the gate of the switch tube , and the gate of the switch tube is connected with the gate cut-off acceleration circuit to generate the gate cut-off voltage of the switch tube . The switch tube and the gate of the switch tube is connected with the other end of the resistor ​ The switch tube The gate of the switch tube is connected with one end of the resistor The other end of the resistor is connected with the gate of the switch tube The drain dynamic bias circuit includes a resistor and a resistor ; The drain dynamic bias circuit further comprises that one end of the resistor is connected with a power supply , the other end of the resistor is connected with one end of the resistor , the other end of the resistor is connected with the ground, a third voltage dividing circuit is formed to generate a bias voltage , and the bias voltage is taken as the drain voltage of the switch tube ; the switch tube the drain of the switch tube the other end of the resistor The switch tube The drain of the power tube is connected with the drain of the switch tube.

2. The bias circuit for a VCSEL laser as claimed in claim 1, characterized in that: The laser driver bias circuit includes an error amplifier, a power transistor , a matching resistor , a laser , and a modulation circuit.

3. The bias circuit for a VCSEL laser as claimed in claim 2, characterized in that: The high voltage bias circuit is used to maintain the power tube under high power voltage condition in the safe voltage range.

4. A method of controlling a bias circuit of a VCSEL laser based on the bias circuit of a VCSEL laser according to claims 1 to 3, characterized in that The control signal DIS is defined, when DIS is low, the gate dynamic bias circuit turns on the switch tube and turns off the switch tube , the gate bias voltage of the switch tube is obtained ; By setting the value of the constant current source and the resistance , the gate-source voltage of the switch tube is obtained ; When the DIS is at a high level, the gate dynamic biasing circuit turns off the switch tube , turns on the switch tube , and turns on the switch tube ; The switch tube is charged by the gate cut-off acceleration circuit of the switch tube The gate stray capacitance of the switch tube is charged, so that the switch tube is cut off; When the switch tube is turned off, the power tube is cut off . The connection circuit of the power supply is changed to a drain dynamic bias circuit to provide a bias voltage to the source of the power tube 5. A method of controlling a bias circuit of a VCSEL laser based on the bias circuit of a VCSEL laser of claim 4, characterized in that: The definition of the control signal DIS includes that the control signal DIS is a closing signal, DIS=0 is low level, and the laser Normal opening, DIS=1 is high level, and the laser Normal closing.

6. A method of controlling a bias circuit of a VCSEL laser based on the bias circuit of a VCSEL laser of claim 5, characterized in that: The gate dynamic biasing circuit comprises a first voltage divider circuit composed of a resistor and a resistor and a resistor By setting the resistance and the resistance ratio, the bias voltage is obtained.

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