Novel plastic package full-bridge silicon carbide module and manufacturing method thereof

Abstract

The invention discloses a novel plastic-packaged full-bridge silicon carbide module and a manufacturing method thereof.The novel plastic-packaged full-bridge silicon carbide module comprises a heat dissipation plate, three sets of phase branches are arranged on the heat dissipation plate, each phase branch comprises a ceramic copper-clad substrate, the upper surface of each ceramic copper-clad substrate is a first copper layer, the first copper layer is divided into an output area and a processing area, and the processing area is divided into an output area and a processing area; a source electrode plate and a grid electrode plate are respectively arranged in the output area and the processing area, and the output area, the processing area, the source electrode plate and the grid electrode plate are arranged at intervals; the output area and the processing area are respectively welded and connected with a group of chips, the two groups of chips are symmetrically arranged and are electrically connected with the adjacent source plate or grid plate through bonding wires, the chips on the processing area are electrically connected with the output area through a main loop copper clamp, the chips on the output area are electrically connected with an output copper clamp, the output copper clamp is positioned above the main loop copper clamp, and the main loop copper clamp is electrically connected with the processing area. The epoxy resin plastic packaging layer covers the outside of the phase branch, thereby greatly improving the space utilization rate of the power device, reducing the size of the device, and improving the power density.

Description

Technical Field

[0001] This invention belongs to the field of power module technology, and specifically relates to a novel plastic-encapsulated full-bridge silicon carbide module and its manufacturing method. Background Technology

[0002] An integrated full-bridge module is an electronic module that integrates a full-bridge circuit into a single package. Its structure integrates power switching devices, drive circuits, and related control circuits into a compact package. During operation, it can quickly switch the current direction to convert DC to AC, or regulate the output voltage and current to meet the needs of different loads. It is widely used in fields that require efficient power conversion and motor control, such as electric vehicles, industrial automation equipment, and renewable energy systems. For example, in the low-altitude economic Evto1 field, the integrated full-bridge module can be used for motor drive control to realize the electric propulsion and flight control of Evto1 aircraft.

[0003] Most integrated full-bridge modules on the market are mainly in HPD packaging. Even the smaller miniHPD products have dimensions of 142X80X23MM and a total weight of about 600G. These packaging forms occupy a lot of space and weight, and the overall stray inductance of the module is also very large, which is extremely inconvenient for customers. Therefore, this application provides a new type of plastic-encapsulated full-bridge silicon carbide module and its manufacturing method, which greatly reduces the size and weight of the module and significantly reduces the stray inductance of the module while achieving complete circuit functions. Summary of the Invention

[0004] This invention provides a novel molded full-bridge silicon carbide module and its manufacturing method, aiming to solve the problems mentioned in the background art.

[0005] To solve the above-mentioned technical problems, the present invention adopts the following technical solution: A novel molded full-bridge silicon carbide module includes: a heat sink, with three sets of phase branches spaced apart on the upper surface of the heat sink, each phase branch including: a ceramic copper-clad substrate welded to the heat sink, the upper surface of the ceramic copper-clad substrate being a first copper layer, the first copper layer being divided into two symmetrically arranged output areas and processing areas, each containing a source plate and a gate plate, the output area, processing area, source plate, and gate plate being spaced apart; a set of chips is welded to each of the output area and processing area, the two sets of chips being symmetrically arranged and electrically connected to adjacent source plates or gate plates via bonding wires; the chips in the processing area are electrically connected to the output area via a main circuit copper clip, the chips in the output area are electrically connected to an output copper clip, the output copper clip being located above the main circuit copper clip; and the phase branches are covered with an epoxy resin molding layer.

[0006] Furthermore, the processing area is electrically connected to an emitter signal terminal, and both the source plate and the gate plate are electrically connected to signal terminals.

[0007] Furthermore, a temperature measurement circuit is provided inside the output area, and the temperature measurement circuits are electrically connected to each other. Signal terminals are electrically connected to both ends of the temperature measurement circuits.

[0008] Furthermore, the epoxy resin encapsulation layer is provided with a first clearance opening, a second clearance opening, and a third clearance opening. The first clearance opening is used to expose the output area, the second clearance opening is used to expose the emitter signal terminal and the signal terminals on the source plate, the gate plate, and the temperature measurement circuit, and the third clearance opening is used to expose the processing area.

[0009] Furthermore, the ceramic copper-clad substrate includes: a ceramic layer, the upper surface of which is covered with a first copper layer and the lower surface of which is covered with a second copper layer, and the lower surface of the second copper layer is covered with nano-copper solder.

[0010] Furthermore, the main circuit copper clamp is provided with downwardly bent connecting parts on both sides, which are used to electrically connect with the chip and the output area, respectively.

[0011] Furthermore, the output copper clip is horizontally positioned above the main circuit copper clip, and a number of downwardly bent pins are provided on the side of the output copper clip adjacent to the output area, and the pins are electrically connected to the chip respectively.

[0012] Furthermore, the lower surface of the heat sink is provided with a plurality of heat dissipation fins, which are arranged in parallel at intervals and perpendicular to the lower surface of the heat sink.

[0013] Furthermore, this application also provides a novel method for manufacturing a molded full-bridge silicon carbide module, used to manufacture the novel molded full-bridge silicon carbide module as described above, comprising the following steps: Step 1: The ceramic copper-clad substrates in the three phase branches are soldered to the upper surface of the heat sink using diffusion soldering. Step 2: The chip is soldered onto the preset positions of the output and processing areas on the ceramic copper-clad substrate using silver sintering. Step 3: Connect the chip to the corresponding source or gate plate using bonding wires according to the preset circuit; Step 4: Connect the two sides of the main circuit copper clip to the corresponding chip and output area using solder paste or solder pads; Step 5: Connect the output copper clip to the corresponding chip using solder paste or solder pads; Step 6: Solder the thermistor onto the temperature measurement circuit using solder paste or solder pads; Step 7: Solder the emitter signal terminals to the processing area using solder paste, and solder the signal terminals to the corresponding source plate, gate plate, and temperature measurement circuit using solder paste. Step 8: Test each phase branch. After the test is passed, use epoxy resin to encapsulate the three phase branches to form an epoxy resin encapsulation layer. Reserve the first, second and third clearance openings on the epoxy resin encapsulation layer.

[0014] Compared with the prior art, the present invention has the following technical effects: 1. The novel plastic-encapsulated full-bridge silicon carbide module of the present invention, through a reasonable layout structure, sets three sets of phase branches at intervals on the heat sink. This compact layout effectively utilizes space, greatly reduces the size and weight of the module while realizing complete circuit functions, greatly improves the space utilization rate of power devices, reduces device volume, increases power density, and makes the module easier for customers to install and use in different devices.

[0015] 2. The novel plastic-encapsulated full-bridge silicon carbide module of the present invention optimizes the internal structure, such as the connection method and layout of the chip with the source plate, gate plate, main circuit copper clip and output copper clip, so that the current path is more reasonable. The design of the stacked terminals shortens the overall circuit, reduces stray inductance, reduces electromagnetic interference and stray inductance, and improves the electrical performance and stability of the module, so as to better meet the needs of high-efficiency power conversion and motor control.

[0016] 3. The novel encapsulated full-bridge silicon carbide module of this invention uses an epoxy resin encapsulation layer to cover the phase branches, providing physical protection for the internal circuits and chips. This prevents damage from external dust, moisture, mechanical damage, etc., improving the module's environmental adaptability and reliability. Epoxy resin has excellent insulation properties, further enhancing the module's electrical insulation and ensuring safe and stable operation under complex working environments such as high voltage and high current. Compared to potting modules, epoxy resin encapsulation offers higher overall reliability and significantly increases the product's power cycle life.

[0017] 4. The novel encapsulated full-bridge silicon carbide module of this invention no longer uses conventional pins as signal terminals. Instead, it connects the signal terminals to external devices via laser welding, significantly improving the module's vibration resistance. Conventional pins are typically connected to the circuit board via mechanical methods such as plugging or crimping. This connection method relies on physical contact for signal transmission, and in a vibrating environment, the contact points between the pins and the circuit board are prone to loosening. Due to the displacement and impact forces generated by vibration, the contact resistance between the pins and the circuit board may increase, or even cause intermittent open circuits, thus affecting the stability of the module's signal transmission. Laser welding utilizes a high-energy-density laser beam focused on the welding area, causing the materials to melt and fuse rapidly. The laser beam has extremely high focusing precision, allowing for precise control of the welding position and area, enabling welding of minute areas and reducing the thermal impact on surrounding materials. This high-precision welding method ensures a more accurate and robust connection between the signal terminals and external devices.

[0018] 5. The novel molded full-bridge silicon carbide module of this invention uses nano-copper solder to connect the ceramic copper-clad substrate and the heat sink via diffusion bonding. This tight bond allows heat to be transferred more efficiently from the ceramic copper-clad substrate to the heat sink. Compared to the interface gaps and defects that may exist in traditional soldering methods, the interface thermal resistance formed by nano-copper solder diffusion bonding is smaller, and the heat conduction path is smoother, thereby reducing the overall thermal resistance of the product. Attached Figure Description

[0019] Figure 1 This is an overall isometric view of a novel plastic-encapsulated full-bridge silicon carbide module as described in this invention; Figure 2 This is a schematic diagram of the phase branch structure of a novel plastic-encapsulated full-bridge silicon carbide module according to the present invention; Figure 3 This is a schematic diagram of the output copper clip arrangement of a novel plastic-encapsulated full-bridge silicon carbide module according to the present invention; Figure 4 This is a schematic diagram of the phase branch encapsulation of a novel encapsulated full-bridge silicon carbide module according to the present invention; Figure 5 This is a side view of the phase branch of a novel plastic-encapsulated full-bridge silicon carbide module according to the present invention; Figure 6 This is a circuit diagram of a novel plastic-encapsulated full-bridge silicon carbide module according to the present invention; Figure 7 This is a schematic diagram of the signal terminal arrangement of a novel plastic-encapsulated full-bridge silicon carbide module according to the present invention.

[0020] In the picture: 1. Heat sink; 101. Heat sink fins; 2. Phase branch; 3. Ceramic copper-clad substrate; 301. Ceramic layer; 302. First copper layer; 303. Second copper layer; 304. Nano copper solder; 4. Output area; 5. Processing area; 6. Emitter signal terminal; 7. Source plate; 8. Gate plate; 9. Temperature measurement circuit; 10. Thermistor; 11. Chip; 12. Main circuit copper clip; 13. Bonding wire; 14. Output copper clip; 15. Epoxy resin sealing layer; 1501. First clearance opening; 1502. Second clearance opening; 1503. Third clearance opening. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below in conjunction with specific embodiments of the present application and with reference to the accompanying drawings.

[0022] like Figure 1-5 As shown, a novel molded full-bridge silicon carbide module includes: a heat sink 1, with three sets of phase branches 2 spaced apart on the upper surface of the heat sink 1. Each phase branch 2 includes a ceramic copper-clad substrate 3 welded to the heat sink 1. The upper surface of the ceramic copper-clad substrate 3 is a first copper layer 302, which is divided into two symmetrically arranged output regions 4 and processing regions 5. Source plates 7 and gate plates 8 are respectively disposed inside the output regions 4 and processing regions 5. Both the gate plate and the output region 4 and the processing region 5 are spaced apart; a set of chips 11 are respectively soldered to the output region 4 and the processing region 5. The two sets of chips 11 are symmetrically arranged and electrically connected to the adjacent source plate 7 or gate plate 8 through bonding wires 13. The chip 11 on the processing region 5 is electrically connected to the output region 4 through the main circuit copper clip 12. The chip 11 on the output region 4 is electrically connected to the output copper clip 14. The output copper clip 14 is located above the main circuit copper clip 12. The phase branch 2 is covered with an epoxy resin molding layer 15.

[0023] The three sets of phase branches 2 are spaced apart on the heat sink 1. This compact layout effectively utilizes space, greatly reduces the size and weight of the module while achieving complete circuit functions, significantly improves the space utilization of power devices, reduces device volume, increases power density, and makes the module easier for customers to install and use in different devices.

[0024] In phase branch 2, the output copper clip 14 is located above the main circuit copper clip 12. The design of the stacked terminals shortens the overall circuit, reduces stray inductance, reduces electromagnetic interference and stray inductance, and improves the electrical performance and stability of the module, which can better meet the needs of high-efficiency power conversion and motor control.

[0025] An epoxy resin encapsulation layer 15 covers the outside of the phase branch 2, providing physical protection for the internal circuitry and chips 11 of the module. This prevents damage from external dust, moisture, mechanical damage, etc., improving the module's environmental adaptability and reliability. Epoxy resin has excellent insulation properties, further enhancing the module's electrical insulation and ensuring safe and stable operation under complex working environments such as high voltage and high current. Compared to potting, epoxy resin encapsulation offers higher overall module reliability and significantly increases the product's power cycle life.

[0026] like Figure 2 As shown, the processing area 5 is electrically connected to the emitter signal terminal 6, and the source plate 7 and the gate plate 8 are each electrically connected to a signal terminal.

[0027] like Figure 2 As shown, a temperature measuring circuit 9 is provided inside the output area 4, and a thermistor 10 is electrically connected between the temperature measuring circuits 9. Signal terminals are electrically connected to both ends of the temperature measuring circuit 9.

[0028] Processing area 5 is powered on and connected to emitter signal terminal 6, enabling accurate transmission of relevant signals from processing area 5, such as emitter current and voltage, to the external control circuit. This is crucial for precise module control. By acquiring the emitter signal in real time, the control circuit can adjust according to the module's actual operating state, ensuring stable and efficient operation under different loads and conditions. The emitter signal reflects the module's internal operating status; when abnormalities occur, such as overcurrent or overvoltage, the emitter signal will change accordingly. By monitoring the signal transmitted through emitter signal terminal 6, the control system can promptly detect faults and take protective measures, such as cutting off power or reducing power, to prevent further damage to the module and improve its reliability and safety.

[0029] The signal terminals on the source plate 7 and gate plate 8 are used to transmit source and gate signals, respectively. In the full-bridge module, the gate signal is used to control the on and off of the power switching devices, while the source signal is used to monitor the operating status of the power switching devices. Through these signal terminals, the external drive circuit can precisely control the switching action of the power switching devices, realizing the conversion of DC to AC and the regulation of output voltage and current. By monitoring and adjusting the source and gate signals, the operating parameters of the power switching devices, such as switching speed and on-resistance, can be optimized, thereby improving the efficiency and performance of the module. For example, adjusting the strength and timing of the gate drive signal according to the source signal can reduce switching losses and improve the power conversion efficiency of the module.

[0030] The temperature monitoring system is comprised of a temperature sensing circuit 9 and a thermistor 10 within the output area 4. The resistance of the thermistor 10 changes with temperature. By measuring the signal across the temperature sensing circuit 9, the temperature information of the output area can be indirectly obtained. Real-time temperature monitoring allows the control system to understand the module's operating temperature promptly, preventing performance degradation or damage due to excessive heat. Temperature significantly impacts module performance; by monitoring and adjusting the temperature in real time, module performance can be optimized. For example, appropriately reducing the module's output power at higher temperatures can reduce power loss and component aging caused by temperature increases, improving module stability and reliability.

[0031] like Figure 4 As shown, the epoxy resin encapsulation layer 15 is provided with a first clearance opening 1501, a second clearance opening 1502 and a third clearance opening 1503. The first clearance opening 1501 is used to expose the output area 4, the second clearance opening 1502 is used to expose the emitter signal terminal 6 and the signal terminals on the source plate 7, the gate plate 8 and the temperature measurement circuit 9, and the third clearance opening 1503 is used to expose the processing area 5.

[0032] The first clearance opening 1501 exposes the output area 4; the second clearance opening 1502 exposes the emitter signal terminal 6, as well as the signal terminals of the source plate 7, gate plate 8, and temperature measurement circuit 9; and the third clearance opening 1503 exposes the processing area 5. These signal terminals and exposed electrical connection points are key parts for signal transmission and interaction between the module and external circuits. Exposing these signal terminals facilitates their connection with external control circuits, detection equipment, etc., eliminating the need to damage the plastic encapsulation layer to locate and connect signal terminals, simplifying the module's installation and debugging process, and improving production efficiency and ease of use.

[0033] like Figure 5 As shown, the ceramic copper-clad substrate 3 includes: a ceramic layer 301, the upper surface of the ceramic layer 301 is covered with a first copper layer 302, the lower surface is covered with a second copper layer 303, and the lower surface of the second copper layer 303 is covered with nano copper solder 304.

[0034] The ceramic layer 301 possesses excellent electrical insulation properties, effectively isolating the first copper layer 302 and the second copper layer 303 to prevent short circuits between circuits. Simultaneously, it provides a certain withstand voltage, ensuring the module operates safely and reliably under different voltage environments. This insulation characteristic allows the ceramic copper-clad substrate to meet the needs of complex circuit designs and is suitable for applications with high electrical safety requirements. The nano-copper solder 304 covering the lower surface of the second copper layer 303 has unique properties; the nano-copper particles have a large specific surface area and high surface activity, making the soldering process easier. During diffusion soldering, the nano-copper solder 304 can achieve a good connection with the heat sink 1 at lower temperatures and pressures, reducing the thermal impact on the substrate and heat sink 1 during soldering and lowering the generation of thermal stress.

[0035] like Figure 5 As shown, the main circuit copper clip 12 has downwardly bent connecting parts on both sides, which are used to electrically connect to the chip 11 and the output area 4, respectively.

[0036] like Figure 5 As shown, the output copper clip 14 is horizontally positioned above the main circuit copper clip 12. The side of the output copper clip 14 adjacent to the output area 4 is provided with several downward-bent pins, which are electrically connected to the chip 11 respectively.

[0037] The structural design of the main circuit copper clip 12 and the output copper clip 14 helps optimize the current path. Reasonable bends and layout allow current to flow more smoothly in the circuit, reducing the area of ​​the current loop. According to electromagnetic principles, a smaller current loop area can reduce the inductance value, thereby reducing the impact of inductance on circuit performance and improving the circuit's response speed and stability. The output copper clip 14 is horizontally positioned above the main circuit copper clip 12. This layered structural design makes full use of space, resulting in a more compact circuit layout. Within a limited space, more functions and connections can be achieved, making it suitable for space-constrained electronic devices such as miniaturized power modules and integrated circuit boards.

[0038] like Figure 1 As shown, the lower surface of the heat sink 1 is provided with a plurality of heat dissipation fins 101, which are arranged in parallel at intervals and perpendicular to the lower surface of the heat sink 1.

[0039] The design of the heat dissipation fins significantly increases the effective heat dissipation area of ​​the heat sink. Because the fins provide a large additional surface area, more heat can be exchanged with the surrounding air, thus significantly improving heat dissipation efficiency, effectively reducing the operating temperature of the equipment, and ensuring its stable performance. The parallel, spaced heat dissipation fins form numerous channels that guide the airflow into orderly convection as the surrounding air moves.

[0040] This application also provides a novel method for manufacturing a molded full-bridge silicon carbide module, used to manufacture the novel molded full-bridge silicon carbide module as described above, comprising the following steps: Step 1: The ceramic copper-clad substrate 3 in the three sets of phase branches 2 is soldered to the upper surface of the heat sink 1 by diffusion soldering. Step 2: The chip 11 is soldered to the preset positions of the output area 4 and the processing area 5 on the ceramic copper-clad substrate 3 by silver sintering. Step 3: Connect chip 11 to the corresponding source plate 7 or gate plate 8 via bonding wire 13 according to the preset circuit; Step 4: Connect the two sides of the main circuit copper clip 12 to the corresponding chip 11 and output area 4 using solder paste or solder pads; Step 5: Connect the output copper clip 14 to the corresponding chip 11 using solder paste or solder pads; Step 6: Solder the thermistor 10 onto the temperature measuring circuit 9 using solder paste or solder pads; Step 7: Connect the emitter signal terminal 6 to the processing area 5 by soldering with solder paste, and connect the signal terminal to the corresponding source plate 7, gate plate 8 and temperature measurement circuit 9 by soldering with solder paste. Step 8: Test each phase branch 2. After the test is passed, use epoxy resin to encapsulate the three phase branches 2 respectively to form an epoxy resin encapsulation layer 15. Reserve the first clearance opening 1501, the second clearance opening 1502 and the third clearance opening 1503 on the epoxy resin encapsulation layer 15.

[0041] In the specific use of the silicon carbide module provided in this application, the signal terminals on the module are connected to external devices by laser welding.

[0042] In one specific embodiment, the aforementioned silicon carbide module has the following specific circuit: Figure 6 The circuit diagram shown is provided, and the terminal points corresponding to the silicon carbide module can be referenced. Figure 7 The diagram shows the terminal point locations.

[0043] This application presents a novel molded full-bridge silicon carbide module that eliminates the use of conventional pins as signal terminals. Instead, it connects the signal terminals to external devices via laser welding, significantly improving the module's vibration resistance. Conventional pins typically connect to the circuit board using mechanical methods such as plugging or crimping. This connection method relies on physical contact for signal transmission, and in a vibrating environment, the contact points between the pins and the circuit board are prone to loosening. Displacement and impact forces generated by vibration can increase the contact resistance between the pins and the circuit board, even leading to intermittent open circuits, thus affecting the module's signal transmission stability. Laser welding utilizes a high-energy-density laser beam focused on the welding area, causing the materials to melt and fuse rapidly. The laser beam has extremely high focusing precision, allowing for precise control of the welding position and area, enabling welding in minute areas and reducing the thermal impact on surrounding materials. This high-precision welding method ensures a more accurate and robust connection between the signal terminals and external devices.

[0044] Furthermore, nano-copper solder 304 is used to connect the ceramic copper-clad substrate 3 and the heat sink 1 via diffusion bonding. This tight bond allows heat to be transferred more efficiently from the ceramic copper-clad substrate 3 to the heat sink 1. Compared to the interface gaps and defects that may exist in traditional welding methods, the interface thermal resistance formed by nano-copper solder 304 diffusion bonding is smaller, and the heat conduction path is smoother, thereby reducing the overall thermal resistance of the product.

[0045] The above description is only a preferred embodiment of the present invention. It should be noted that those skilled in the art can make several modifications and improvements without departing from the inventive concept of the present invention, and these all fall within the protection scope of the present invention.

Claims

1. A novel plastic-encapsulated full-bridge silicon carbide module, characterized in that, include: A heat sink (1) has three sets of phase branches (2) spaced apart on its upper surface. Each phase branch (2) includes a ceramic copper-clad substrate (3) welded to the heat sink (1). The upper surface of the ceramic copper-clad substrate (3) is a first copper layer (302). The first copper layer (302) is divided into two symmetrically arranged output areas (4) and processing areas (5). Source plates (7) and gate plates (8) are respectively arranged inside the output areas (4) and processing areas (5). The output areas (4), processing areas (5), source plates (7) and gate plates (8) are spaced apart. The output area (4) and the processing area (5) are respectively welded with a set of chips (11). The two sets of chips (11) are symmetrically arranged and electrically connected to the adjacent source plate (7) or gate plate (8) through bonding wire (13). The chips (11) on the processing area (5) are electrically connected to the output area (4) through the main circuit copper clip (12). The chips (11) on the output area (4) are electrically connected to the output copper clip (14). The output copper clip (14) is located above the main circuit copper clip (12). The phase branch (2) is covered with an epoxy resin molding layer (15).

2. The novel molded full-bridge silicon carbide module according to claim 1, characterized in that, The processing area (5) is electrically connected to an emitter signal terminal (6), and the source plate (7) and the gate plate (8) are each electrically connected to a signal terminal.

3. A novel molded full-bridge silicon carbide module according to claim 2, characterized in that, The output area (4) is provided with a temperature measuring circuit (9), and the temperature measuring circuits (9) are electrically connected to each other with a thermistor (10). The two ends of the temperature measuring circuits (9) are respectively electrically connected to signal terminals.

4. A novel plastic-encapsulated full-bridge silicon carbide module according to claim 3, characterized in that, The epoxy resin encapsulation layer (15) is provided with a first clearance opening (1501), a second clearance opening (1502) and a third clearance opening (1503). The first clearance opening (1501) is used to expose the output area (4), the second clearance opening (1502) is used to expose the emitter signal terminal (6) and the signal terminals on the source plate (7), the gate plate (8) and the temperature measurement circuit (9), and the third clearance opening (1503) is used to expose the processing area (5).

5. A novel molded full-bridge silicon carbide module according to claim 1, characterized in that, The ceramic copper-clad substrate (3) includes: a ceramic layer (301), the upper surface of the ceramic layer (301) is covered with a first copper layer (302), the lower surface is covered with a second copper layer (303), and the lower surface of the second copper layer (303) is covered with nano copper solder (304).

6. A novel molded full-bridge silicon carbide module according to claim 1, characterized in that, The main circuit copper clip (12) has downwardly bent connecting parts on both sides, which are used to electrically connect with the chip (11) and the output area (4), respectively.

7. A novel molded full-bridge silicon carbide module according to claim 6, characterized in that, The output copper clip (14) is horizontally positioned above the main circuit copper clip (12). The output copper clip (14) has several downward-bent pins on the side adjacent to the output area (4), and the pins are electrically connected to the chip (11) respectively.

8. A novel molded full-bridge silicon carbide module according to claim 1, characterized in that, The lower surface of the heat sink (1) is provided with a plurality of heat sink fins (101), which are arranged in parallel intervals and perpendicular to the lower surface of the heat sink (1).

9. A method for manufacturing a novel molded full-bridge silicon carbide module, used to manufacture any of the novel molded full-bridge silicon carbide modules as described in claims 4-8, characterized in that, Includes the following steps: Step 1: The ceramic copper-clad substrate (3) in the three sets of phase branches (2) is soldered to the upper surface of the heat sink (1) by diffusion soldering; Step 2: The chip (11) is soldered to the preset positions of the output area (4) and processing area (5) on the ceramic copper-clad substrate (3) by silver sintering; Step 3: Connect the chip (11) to the corresponding source plate (7) or gate plate (8) via bonding wire (13) according to the preset circuit. Step 4: Connect the two sides of the main circuit copper clip (12) to the corresponding chip (11) and output area (4) using solder paste or solder pads; Step 5: Connect the output copper clip (14) to the corresponding chip (11) using solder paste or solder pads; Step 6: Solder the thermistor (10) onto the temperature measuring circuit (9) using solder paste or solder pads; Step 7: Connect the emitter signal terminal (6) to the processing area (5) by soldering with solder paste, and connect the signal terminal to the corresponding source plate (7), gate plate (8) and temperature measurement circuit (9) by soldering with solder paste. Step 8: Test each phase branch (2). After the test is qualified, use epoxy resin to encapsulate the three phase branches (2) respectively to form an epoxy resin encapsulation layer (15). Reserve the first clearance opening (1501), the second clearance opening (1502) and the third clearance opening (1503) on the epoxy resin encapsulation layer (15).

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