Membrane member, support structure thereof, and liquid ejection head

Abstract

The present disclosure provides a MEMS component, a support structure thereof and a liquid ejection head. The support structure comprises at least two half-via structures and one via. The via penetrates through the front surface and the back surface of the support structure, and is used to provide an electrical interconnection channel between a piezoelectric actuator structure and a driving circuit. The opening of each half-via structure is located on the back surface of the support structure, and each half-via structure comprises a half-via top wall, a first number of half-via side walls and a second number of half-via cavities. The lower end of each half-via side wall is bonded to the piezoelectric actuator structure to form a first sealed cavity containing a movable part of the piezoelectric actuator structure. In the present disclosure, each adjacent first sealed cavity is isolated by the half-via side wall, so that the vibration of the movable part in any first sealed cavity will not affect other first sealed cavities, thereby reducing the cross-talk between different movable parts and improving the reliability of the piezoelectric actuator structure.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the field of MEMS (Micro Electro-Mechanical Systems), and in particular to a MEMS component, a support structure thereof and a liquid ejection head. BACKGROUND

[0002] In the actuator structure of a piezoelectric ejection head of a micro-electro-mechanical system, there is usually a thin film (vibration film) that is deformed by driving the piezoelectric material in the actuator structure through the inverse piezoelectric effect, so as to exert pressure on the ink in the vibration cavity, and then form droplets.

[0003] In a MEMS piezoelectric ejection head, the thin film is usually made of a brittle material, and the thickness is mostly not greater than 5 um, which makes the thin film itself extremely prone to breakage. Therefore, it is necessary to design a support structure to protect the thin film; at the same time, in order to provide electrical energy for the piezoelectric actuator structure, the support structure needs to have the ability of electrical connection, or leave an interface design for electrical connection, and must have a certain reliability. SUMMARY

[0004] The purpose of some embodiments of the present disclosure is to provide a MEMS component, a support structure thereof and a liquid ejection head.

[0005] Some embodiments of the present disclosure solve the above technical problems by the following technical solutions:

[0006] In a first aspect, a support structure of a MEMS component is provided, the MEMS component comprising a piezoelectric actuator structure and a driving circuit for driving the piezoelectric actuator structure to operate;

[0007] The support structure comprises at least two first half-slot structures and a first slot, the first slot being located between the two first half-slot structures;

[0008] The first slot penetrates through the front surface and the back surface of the support structure, and the first slot is used to provide an electrical interconnection channel between the piezoelectric actuator structure and the driving circuit;

[0009] The opening of the first half-slot structure is located on the back surface of the support structure, each first half-slot structure comprises a first half-slot top wall, a first number of first half-slot side walls and a second number of first half-slot cavities;

[0010] The second number is one less than the first number;

[0011] a lower end of each of the first half-slot sidewalls is bonded to the piezoelectric actuator structure to form a first sealed cavity containing a movable part of the piezoelectric actuator structure;

[0012] The MEMS component includes a second number of the first sealed cavities.

[0013] Optionally, a support long edge direction of the support structure is parallel to an actuator short edge direction of the piezoelectric actuator structure.

[0014] A support short edge direction of the support structure is parallel to an actuator long edge direction of the piezoelectric actuator structure.

[0015] Optionally, an end angle of the first through-slot is a rounded angle, and an end angle of the first half-slot structure is a rounded angle.

[0016] And / or, a thickness of the first through-slot is 300um-500um.

[0017] And / or, a thickness of the first half-slot cavity is greater than 0 and less than or equal to 200um.

[0018] And / or, a back surface of the support structure is provided with a glue hole.

[0019] And / or, the first through-slot includes a first channel and a second channel.

[0020] The first channel corresponds to a front surface of the support structure, and the second channel corresponds to a back surface of the support structure.

[0021] The first channel and the second channel are the same size or different sizes.

[0022] And / or, a surface of the support structure is covered with a passivation film.

[0023] And / or, a lower end of each of the first half-slot sidewalls is bonded to the piezoelectric actuator structure through a glue layer.

[0024] In a second aspect, a MEMS component is provided, including a piezoelectric actuator structure and a driving circuit for driving the piezoelectric actuator structure to operate.

[0025] The MEMS component further includes a target support structure, which includes a first support structure.

[0026] The first support structure is the support structure of the above-mentioned MEMS component.

[0027] Optionally, the piezoelectric actuator structure includes a dam and a vibrating membrane layer.

[0028] The vibrating membrane layer comprises a vibrating region and a non-vibrating region.

[0029] The movable part comprises the vibrating region, and the dam is located above the non-vibrating region.

[0030] The lower end of each first half-slot side wall of the first support structure is mutually keyed with the top of the corresponding dam to form a first sealed cavity containing the movable part of the piezoelectric actuator structure.

[0031] Optionally, the piezoelectric actuator structure further comprises a vibrating cavity and a vibrating cavity side wall.

[0032] The vibrating membrane layer covering the vibrating cavity forms the vibrating region, and the vibrating membrane layer covering the vibrating cavity side wall forms the non-vibrating region.

[0033] Optionally, the target support structure comprises a second support structure.

[0034] The second support structure comprises at least two second half-slot structures and a second slot, and the second slot is located between the two second half-slot structures.

[0035] The second slot penetrates the front and back surfaces of the second support structure, and the second slot is used to provide an electrical interconnection channel between the piezoelectric actuator structure and the driving circuit.

[0036] The opening of the second half-slot structure is located on the back surface of the second support structure, and each second half-slot structure comprises a second half-slot top wall, a second half-slot side wall, and a second half-slot cavity.

[0037] The lower end of the second half-slot side wall is mutually keyed with the top of the dam to form a second sealed cavity containing the movable part of the piezoelectric actuator structure.

[0038] Alternatively, the target support structure comprises a third support structure.

[0039] The third support structure comprises at least two cover plates and a third slot, and the third slot is located between the two cover plates.

[0040] The third slot penetrates the front and back surfaces of the third support structure, and the third slot is used to provide an electrical interconnection channel between the piezoelectric actuator structure and the driving circuit.

[0041] The lower end of the cover plate is mutually keyed with the top of the dam to form a third sealed cavity containing the movable part of the piezoelectric actuator structure.

[0042] Optionally, the dam includes a dam electrode layer, and a first piezoelectric material layer, a dielectric material layer and a lead wire metal layer are sequentially stacked above the dam electrode layer;

[0043] The width of the dam electrode layer is greater than the width of the first piezoelectric material layer, and the dielectric material layer covers the dam electrode layer and the first piezoelectric material layer;

[0044] The width of the bottom of the dielectric material layer is less than or equal to the width of the vibration cavity side wall;

[0045] The width of the lead wire metal layer is less than or equal to the width of the top of the dielectric material layer;

[0046] The dam electrode layer is above the non-vibration region.

[0047] Optionally, the lead wire metal layer of the dam includes a through hole;

[0048] The lead wire metal of the dam is grounded through the through hole.

[0049] In a third aspect, a liquid ejection head is provided, which includes the above-mentioned MEMS component.

[0050] On the basis of common general knowledge in the art, the above-mentioned preferred conditions can be combined arbitrarily, thereby obtaining various preferred examples of the present disclosure.

[0051] The positive progress effect of the present disclosure is that:

[0052] The MEMS component, its support structure and the liquid ejection head of the present disclosure, the support structure includes at least two first half-trench structures and a first trench between the two first half-trench structures; the first trench penetrates the front surface and the back surface of the support structure, and is used to provide an electrical interconnection channel between the piezoelectric actuator structure and the driving circuit; the opening of the first half-trench structure is located on the back surface of the support structure, and each first half-trench structure includes a first half-trench top wall, a first number of first half-trench side walls and a second number of first half-trench cavities; the lower end of each first half-trench side wall is bonded to the movable part of the piezoelectric actuator structure to form a first sealed cavity containing the corresponding movable part; the protection and power supply of the piezoelectric actuator structure are realized, and at the same time, each adjacent first sealed cavity is isolated by the first half-trench side wall, so that the vibration of the movable part in any first sealed cavity will not affect other first sealed cavities, reducing the crosstalk between different movable parts and improving the reliability of the piezoelectric actuator structure. BRIEF DESCRIPTION OF DRAWINGS

[0053] Figure 1A first structural schematic diagram of a support structure of a MEMS component provided in Embodiment 1 of the present disclosure;

[0054] Figure 2 A second structural schematic diagram of a support structure of a MEMS component provided in Embodiment 1 of the present disclosure; Figure 1 A cross-sectional schematic diagram of a portion C-C' in the MEMS component provided in Embodiment 1 of the present disclosure;

[0055] Figure 3 A third structural schematic diagram of a support structure of a MEMS component provided in Embodiment 1 of the present disclosure; Figure 2 A top view schematic diagram of the MEMS component provided in Embodiment 1 of the present disclosure;

[0056] Figure 4 A fourth structural schematic diagram of a support structure of a MEMS component provided in Embodiment 1 of the present disclosure; Figure 1 A cross-sectional schematic diagram of a portion A-A' in the MEMS component provided in Embodiment 1 of the present disclosure;

[0057] Figure 5 A fifth structural schematic diagram of a support structure of a MEMS component provided in Embodiment 1 of the present disclosure; Figure 1 A local enlarged schematic diagram of a portion B in the MEMS component provided in Embodiment 1 of the present disclosure;

[0058] Figure 6 A second structural schematic diagram of a support structure of a MEMS component provided in Embodiment 1 of the present disclosure;

[0059] Figure 7 A schematic diagram of electrical interconnection through a through slot provided in Embodiment 1 of the present disclosure;

[0060] Figure 8 A first structural schematic diagram of a MEMS component provided in Embodiment 2 of the present disclosure;

[0061] Figure 9 A second structural schematic diagram of a MEMS component provided in Embodiment 2 of the present disclosure;

[0062] Figure 10 A third structural schematic diagram of a MEMS component provided in Embodiment 2 of the present disclosure;

[0063] Figure 11 A fourth structural schematic diagram of a MEMS component provided in Embodiment 2 of the present disclosure;

[0064] Figure 12 A fifth structural schematic diagram of a MEMS component provided in Embodiment 2 of the present disclosure;

[0065] Figure 13 A sixth structural schematic diagram of a MEMS component provided in Embodiment 2 of the present disclosure. DETAILED DESCRIPTION

[0066] The present disclosure is further illustrated by the following examples without thereby limiting the present disclosure to the examples.

[0067] The prefix words such as "first", "second" in the embodiments of the present disclosure are only used to distinguish different description objects, and have no limiting effect on the position, order, priority, quantity or content of the described objects. The use of ordinal words such as "first" in the embodiments of the present disclosure does not limit the described objects, and the description of the described objects should be referred to the description in the context of claims or embodiments, and should not be construed as redundant limitation because of the use of such prefix words. In addition, in the description of the present embodiment, unless otherwise stated, the meaning of "a plurality of" is two or more.

[0068] Embodiment 1

[0069] The present embodiment provides a support structure of a MEMS component, the MEMS component comprising a piezoelectric actuator structure and a driving circuit for driving the piezoelectric actuator structure to operate; as shown in the figure, the support structure 1 comprises at least two first half-slot structures 11 and a first through slot 12, the first through slot 12 is located between the two first half-slot structures 11. Figure 1

[0070] The first through slot 12 penetrates the front surface and the back surface of the support structure 1, and the first through slot 12 is used to provide an electrical interconnection channel between the piezoelectric actuator structure and the driving circuit.

[0071] The opening of the first half-slot structure 11 is located on the back surface of the support structure, and each first half-slot structure 11 comprises a first half-slot top wall 111, a first number of first half-slot side walls 112 and a second number of first half-slot cavities 113.

[0072] The lower end of each first half-slot side wall 112 is bonded to the piezoelectric actuator structure 2 to form a first sealed cavity 3 containing the movable part of the piezoelectric actuator structure, that is, the movable part of the piezoelectric actuator structure 2 is located in the corresponding first sealed cavity 3.

[0073] The piezoelectric actuator structure is separated by the first half-slot side wall, so the second number is one less than the first number, that is, the number of first half-slot cavities is one less than the number of first half-slot side walls.

[0074] Wherein, the movable part of the piezoelectric actuator structure includes but is not limited to the vibration area of the vibration membrane layer, the lower electrode, the piezoelectric material, the upper electrode, the dielectric material and the lead wire in the piezoelectric actuator structure. The back surface of the support structure is in close contact with the piezoelectric actuator structure.

[0075] Wherein, the first through slot 12 can also be called a through hole, the number of first sealed cavities 3 is the same as the number of first half-slot cavities 113, which is formed on the basis of the first half-slot cavity 113.

[0076] ​The support structure of the MEMS component of the embodiment comprises at least two first half-tunnel structures and a first tunnel; the first tunnel penetrates the front surface and the back surface of the support structure, and is used to provide an electrical interconnection channel between the piezoelectric actuator structure and the driving circuit; the opening of the first half-tunnel structure is located on the back surface of the support structure, and each first half-tunnel structure comprises a first half-tunnel top wall, a first number of first half-tunnel side walls and a second number of first half-tunnel cavities; the lower end of each first half-tunnel side wall is bonded with the movable part of the piezoelectric actuator structure to form a first sealed cavity containing the corresponding movable part; the protection and power supply of the piezoelectric actuator structure are realized, and meanwhile, each adjacent first sealed cavity is isolated by the first half-tunnel side wall, so that the vibration of the movable part in any first sealed cavity will not affect other first sealed cavities, the crosstalk between different movable parts is reduced, and the reliability of the piezoelectric actuator structure is improved.

[0077] In an optional embodiment, the support long edge direction of the support structure 1 is parallel to the actuator short edge direction of the piezoelectric actuator structure 2.

[0078] The support short edge direction of the support structure 1 is parallel to the actuator long edge direction of the piezoelectric actuator structure 2.

[0079] The piezoelectric actuator structure comprises a vibration cavity, and the movable part of the piezoelectric actuator structure is located on the vibration cavity.

[0080] Specifically, the support long edge direction of the support structure 1 is the length direction of the tunnel, the support short edge direction of the support structure 1 is the width direction of the tunnel, the actuator short edge direction of the piezoelectric actuator structure 2 is the width direction of the vibration membrane layer, the actuator long edge direction of the piezoelectric actuator structure 2 is the length direction of the vibration membrane layer, and the piezoelectric actuator structures are arranged in the actuator short edge direction in sequence to form a piezoelectric actuator array. Figure 2 is a sectional view of the support structure along the support long edge direction, Figure 3 is a sectional view of the support structure along the support short edge direction, Figure 2 is a corresponding top view, the half-tunnel side wall 112 separates the piezoelectric actuator structures 2, the support long edge direction of the support structure 1 is the actuator short edge direction of the piezoelectric actuator structure 2, and the support short edge direction of the support structure 1 is the actuator long edge direction of the piezoelectric actuator structure 2. Figure 3 The piezoelectric actuator array shown comprises three piezoelectric actuator structures 2, Figure 2 comprising three first sealed cavities 3.

[0081] The support long side direction of the support structure is parallel to the actuator short side direction of the piezoelectric actuator structure; the support short side direction of the support structure is parallel to the actuator long side direction of the piezoelectric actuator structure, and the first sealed cavity is parallel to the length direction (long side direction) of the actuator in the length direction, so that the first sealed cavity completely covers the movable part of the piezoelectric actuator and effectively protects the movable part.

[0082] In an optional embodiment, the end angle of the first through slot is a rounded angle, and the end angle of the first half through slot structure is a rounded angle.

[0083] The conventional method uses a wet etching technique to etch the through slot, and this method has the advantage of low cost. However, the end angle of the wet etched through slot is relatively sharp, and the support structure is prone to cracking under external force, affecting the production yield and device reliability. In order to ensure the yield, the through slot has a relatively wide sidewall to ensure the structural stability of the support structure. However, this solution will cause the area of the device to increase, reducing the chip output of the device, thereby increasing the cost.

[0084] The end angle of the first through slot and the first half through slot structure of the embodiment is a rounded angle; specifically, the first through slot and the first half through slot structure are made by using a dry etching process. Dry etching has high design pattern freedom, so the first through slot and the first half through slot structure with a rounded end angle can be made. By using the rounded structure, the problem of cracking of the end angle of the support structure under external force can be effectively solved, thereby improving the production yield and the reliability of the device in use, so that the first through slot does not have to be designed with a wide slot wall, thereby reducing the area of the support structure and the actuator structure, i.e. reducing the area of the support wafer structure and the actuator wafer structure, improving the output of the support wafer structure and the actuator wafer structure, and further reducing the manufacturing cost of the device.

[0085] In an optional embodiment, the radius of the rounded angle is 50um-400um.

[0086] In an optional embodiment, the thickness of the first through slot is 300um-500um.

[0087] The thickness t1 of the first through slot satisfies 300um≤t1≤500um, which is a thickness range designed in combination with the stability of an 8-inch wafer production and subsequent packaging process. The thickness of the through slot can also be referred to as the height of the through slot.

[0088] For example, for an 8-inch wafer, if the thickness does not satisfy 400 microns, it is easy to break, therefore, the thickness of the first through slot can be 400um.

[0089] In an optional embodiment, the thickness of the first half through slot cavity is greater than 0 and less than or equal to 200um.

[0090] The thickness t2 of the first half-through slot cavity satisfies 0um < t2≤ 200um.

[0091] For example, the thickness of the first half-through slot cavity is 100um. For the first half-through slot structure, the thickness of the first half-through slot cavity can be as thin as possible as long as the movable part of the actuator structure can be protected. The thickness of the first half-through slot cavity can also be referred to as the height of the first half-through slot cavity.

[0092] If the thickness of the first half-through slot cavity is too thick, the surface thickness of the support structure will be relatively thin, so that the hardness or strength of the support structure will be low, and the support structure cannot effectively protect the actuator structure on the opposite side. Therefore, the thickness of the first half-through slot cavity is limited in the above range, and the thickness t2 of the first half-through slot cavity is less than the thickness t1 of the through slot, as shown in Figure 4 .

[0093] In an optional embodiment, as shown in Figure 1 and Figure 5 , the opposite side of the support structure is provided with a glue hole 13.

[0094] In a specific example, the shape of the glue hole is rectangular.

[0095] The shape and size of the glue hole can be adjusted according to the product design size, and those skilled in the art can flexibly adjust the shape according to the actual situation.

[0096] The glue hole can be arranged at any position, but preferably, the position with a pattern on the piezoelectric actuator structure should be arranged first. Generally, there is an etching pattern below the position where the glue hole is located. The etching pattern is the pattern on the actuator structure corresponding to the position of the glue hole. The shape of the glue hole needs to avoid the pattern at the corresponding position of the actuator structure.

[0097] In an optional embodiment, as shown in Figure 1 and Figure 5 , the end angle of the glue hole is a round angle.

[0098] In an optional embodiment, as shown in Figure 3 , the first through slot 12 includes a first channel 121 and a second channel 122;

[0099] The first channel 121 corresponds to the front side of the support structure 1, and the second channel 122 corresponds to the opposite side of the support structure;

[0100] The size of the first channel 121 and the size of the second channel 122 are the same or different.

[0101] As shown in Figure 6As shown, the first channel 121 corresponds to the front side of the support structure 1, and the second channel 122 corresponds to the back side of the support structure; the width W1 of the first channel 121 is equal to the width W2 of the second channel 122, or the width W1 of the first channel 121 is greater than the width W2 of the second channel 122, or the width W1 of the first channel 121 is less than the width W2 of the second channel 122, which is set according to actual needs. Similarly, the length of the first channel and the length of the second channel can also be set according to actual needs.

[0102] For example, the width W1 of the first channel 121 is greater than the width W2 of the second channel 122, and the length L1 of the first channel 121 is greater than the length L2 of the second channel 122, that is, the front side width of the first channel is greater than the back side width, and the front side length is greater than the back side length, forming a design that the front side caliber of the first channel is greater than the back side caliber of the first channel. Since the back side where the first half-channel structure is located needs to be etched first, and then the first channel is etched, Figure 3 The design that the front side length and width of the first channel are greater than the back side length and width of the first channel, as shown, makes the movable part of the actuator structure fall within the first half-channel cavity range of the first half-channel structure on the back side in the subsequent alignment process, regardless of any deviation.

[0103] In an optional embodiment, as shown in Figure 5 As shown, the surface of the support structure is covered with a passivation film 14.

[0104] The passivation film is used to ensure the insulation and chemical resistance of the support structure, and the thickness t3 of the passivation film needs to satisfy 0nm<t3≤2000nm. For example, the material of the passivation film at least includes silicon dioxide, that is, the passivation film at least includes a silicon oxide film.

[0105] In an optional embodiment, the electrical interconnection between the piezoelectric actuator structure and the driving circuit is realized by using a patch method or a wire bonding method.

[0106] As shown in Figure 7 The patch method involves a patch and a soft board (also known as a flexible circuit board), and the electrical interconnection between the piezoelectric actuator structure 2 and the driving circuit is realized by using the first channel 12 in the support structure 1 and through the patch and the soft board. The wire bonding method involves a wire and a soft board, and the electrical interconnection between the piezoelectric actuator structure 2 and the driving circuit is realized by using the first channel 12 in the support structure 1 and through the wire and the soft board.

[0107] In an optional embodiment, as shown in Figure 8 As shown, the lower end of the first half-channel side wall 112 of the support structure 1 is bonded to the piezoelectric actuator structure 2 through a glue layer.

[0108] The bonding process uses an adhesive layer process. This adhesive layer can be a thermosetting epoxy adhesive applied to the bonding interface surface of the support structure for bonding, or a photoresist layer can be formed on the bonding interface surface of the piezoelectric actuator structure using a photolithography process for bonding.

[0109] Example 2

[0110] This embodiment provides a MEMS component, such as... Figure 8 As shown, the MEMS component includes a piezoelectric actuator structure 2 and a drive circuit for driving the piezoelectric actuator structure to operate; the MEMS component also includes a target support structure, which includes a first support structure; the first support structure is the support structure 1 of the MEMS component provided in Embodiment 1.

[0111] Specifically, such as Figure 1 and Figure 9 As shown, the first support structure includes at least two first semi-through slot structures 11 and one first through slot 12, with the first through slot 12 located between the two first semi-through slot structures 11. The first through slot 12 penetrates the front and back of the first support structure and is used to provide an electrical interconnection channel between the piezoelectric actuator structure and the drive circuit. The opening of the first semi-through slot structure 11 is located on the back of the first support structure. Each first semi-through slot structure 11 includes a first semi-through slot top wall 111, a first number of first semi-through slot side walls 112, and a second number of first semi-through slot cavities 113. The lower end of each first semi-through slot side wall 112 is bonded to the piezoelectric actuator structure 2 to form a first sealed cavity 3 containing the movable part of the piezoelectric actuator structure, i.e., the movable part 21 of the piezoelectric actuator structure 2 is located in the corresponding first sealed cavity 3. The MEMS component of this embodiment includes a first support structure, which is the support structure in Embodiment 1. The support structure includes at least two first half-slot structures and one first through slot. The first through slot penetrates the front and back of the support structure and provides an electrical interconnection channel between the piezoelectric actuator structure and the drive circuit. The opening of the first half-slot structure is located on the back of the support structure. Each first half-slot structure includes a first half-slot top wall, a first number of first half-slot side walls, and a second number of first half-slot cavities. The lower end of each first half-slot side wall is bonded to the movable part of the piezoelectric actuator structure to form a first sealed cavity containing the corresponding movable part. This achieves protection and power supply for the piezoelectric actuator structure. At the same time, each adjacent first sealed cavity is isolated by the first half-slot side walls. When the movable part in any one first sealed cavity vibrates, it will not affect other first sealed cavities, reducing crosstalk between different movable parts and improving the reliability of the piezoelectric actuator structure.

[0112] Figure 9 This is a cross-sectional view of the piezoelectric actuator structure along its short side.Figure 10 This is a cross-sectional view of the piezoelectric actuator structure along its long side. The short side of the actuator in the piezoelectric actuator structure is the width direction of the vibrating diaphragm (i.e., the length direction of the through slot), and the long side of the actuator in the piezoelectric actuator structure is the length direction of the vibrating diaphragm (i.e., the width direction of the through slot).

[0113] In an alternative implementation, such as Figure 9 and Figure 10 As shown, the piezoelectric actuator structure 2 includes a dam 22 and a vibrating diaphragm layer 211;

[0114] The vibrating diaphragm layer 211 includes a vibrating region and a non-vibrating region;

[0115] The movable part 21 includes a vibration zone, and the dam 22 is located above the non-vibration zone;

[0116] The lower end of each first semi-channel sidewall 112 of the first support structure is bonded to the top of the corresponding dam 22 to form a first sealed cavity 3 containing the movable part 21 of the piezoelectric actuator structure 2.

[0117] That is, the bottom of the dam 22 is located above the non-vibration area of ​​the vibrating membrane layer, and the top of the dam 22 is bonded to the lower end of the side wall 112 of the semi-through groove to form the first sealed cavity 3.

[0118] Specifically, the piezoelectric actuator structure also includes a vibration cavity 23 and a vibration cavity sidewall 24;

[0119] The vibration diaphragm 211 covering the vibration cavity 23 forms the vibration region, and the vibration diaphragm 211 covering the side wall 24 of the vibration cavity forms the non-vibration region.

[0120] In an alternative implementation, such as Figure 9 and Figure 10 As shown, the width of the dam 22 is less than the width of the sidewall 112 of the semi-through channel.

[0121] The width of the dam is less than the width of the sidewall of the semi-through channel, which can ensure the sealing of the first sealed cavity formed by the bonding of the support structure and the dam.

[0122] In an alternative implementation, such as Figure 11 As shown, the target support structure includes a second support structure;

[0123] The second support structure includes at least two second semi-through groove structures 5 and a second through groove, with the second through groove located between the two second semi-through groove structures 5.

[0124] The second through slot extends through the front and back of the second support structure. The second through slot is used to provide an electrical interconnection channel between the piezoelectric actuator structure 2 and the drive circuit.

[0125] The opening of the second half-through slot structure is located on the opposite side of the second support structure, each second half-through slot structure 5 comprises a second half-through slot top wall 51, a second half-through slot side wall 52 and a second half-through slot cavity 53;

[0126] The lower end of the second half-through slot side wall 52 is bonded with the top of the dam 22 to form a second sealed cavity 6 containing the movable part of the piezoelectric actuator structure.

[0127] As shown in Figure 11 The piezoelectric actuator structure 2 comprises a vibration cavity 23 and a vibration cavity side wall 24, the dam 22 is located above the non-vibration area of the vibration membrane layer 211, the lower end of the second half-through slot side wall 52 is bonded with the top of the dam 22 to form a second sealed cavity 6 containing the movable part of the piezoelectric actuator structure, and each second sealed cavity 6 contains a plurality of movable parts of the piezoelectric actuator structure.

[0128] In an optional embodiment, the end angle of the second through slot is a rounded angle, and the end angle of the second half-through slot structure is a rounded angle; the radius of the rounded angle is 50um-400um; the thickness of the second through slot is 300um-500um; and the thickness of the second half-through slot cavity is 0um-200um.

[0129] The end angle of the second through slot and the second half-through slot structure of the embodiment is a rounded angle, and by using the rounded angle structure, the problem of cracks in the end angle of the support structure under external force can be effectively solved, thereby improving the production yield and the reliability in use of the device, so that the second through slot does not have to be designed with a wider slot wall, thereby reducing the area of the support structure and the actuator structure, i.e. reducing the area of the support wafer structure and the actuator wafer structure, improving the output of the support wafer structure and the actuator wafer structure, and further reducing the manufacturing cost of the device.

[0130] In an optional embodiment, as shown in Figure 12 The target support structure comprises a third support structure;

[0131] The third support structure comprises at least two cover plates 7 and a third through slot, and the third through slot is located between the two cover plates 7;

[0132] The third through slot penetrates the front and back of the third support structure, and the third through slot is used to provide an electrical interconnection channel between the piezoelectric actuator structure 2 and the driving circuit;

[0133] The height of the dam 22 is greater than the height of the remaining area of the movable part excluding the vibration area;

[0134] The lower end of the cover plate 7 is bonded with the top of the dam 22 to form a third sealed cavity 8 containing the movable part of the piezoelectric actuator structure 2.

[0135] Specifically, the movable part of the piezoelectric actuator structure includes, but is not limited to, a vibration region of a diaphragm layer in the piezoelectric actuator structure, a lower electrode, a piezoelectric material, an upper electrode, a dielectric material, and a lead wire. The height of the dam 22 is greater than the height of the remaining region excluding the vibration region in the movable part, that is, the total height of the lower electrode, the piezoelectric material, the upper electrode, the dielectric material, and the lead wire.

[0136] The cover plate 7 in the embodiment forms the third sealed cavities 8 containing the movable parts of the piezoelectric actuator structures 2 by bonding with the dams 22 without etching the cavities. As shown in Figure 12 The piezoelectric actuator structure 2 includes a vibration cavity 23 and a vibration cavity sidewall 24. The dam 22 is located above the non-vibration region of the diaphragm layer 211. The lower end of the cover plate 7 is bonded with the top of the corresponding dam 22 to form the third sealed cavities 8 containing the movable parts of the piezoelectric actuator structures. Each of the third sealed cavities 8 contains a plurality of movable parts of the piezoelectric actuator structures.

[0137] As shown in Figure 13 The piezoelectric actuator structure 2 includes a vibration cavity 23 and a vibration cavity sidewall 24. The dam 22 is located above the non-vibration region of the diaphragm layer 211. The lower end of the cover plate 7 is bonded with the top of the corresponding dam 22 to form the third sealed cavities 8 containing the movable parts of the piezoelectric actuator structures. Each of the third sealed cavities 8 contains a plurality of movable parts of the piezoelectric actuator structures.

[0138] In an optional embodiment, the end angle of the third through slot is a rounded angle, and the end angle of the cover plate is a rounded angle. The radius of the rounded angle is 50um-400um. The thickness of the third through slot is 300um-500um. The thickness of the cover plate is the same as the thickness of the third through slot.

[0139] The end angles of the third through slot and the cover plate in the embodiment are rounded angles. By using the rounded angle structure, the problem of cracks in the end angle of the support structure under external force can be effectively solved, thereby improving the production yield and the reliability in use of the device, so that the third through slot does not need to be designed with a wider slot wall, thereby reducing the area of the support structure and the actuator structure, that is, reducing the area of the support wafer structure and the actuator wafer structure, improving the output of the support wafer structure and the actuator wafer structure, and further reducing the manufacturing cost of the device.

[0140] In an optional embodiment, as shown in Figure 9 and Figure 10 The dam 22 includes a dam electrode layer 221, and a first piezoelectric material layer 222, a dielectric material layer 223, and a lead wire metal layer 224 stacked in sequence above the dam electrode layer 221.

[0141] The width of the dam electrode layer 221 is greater than the width of the first piezoelectric material layer 222, and the dielectric material layer 223 covers the dam electrode layer 221 and the first piezoelectric material layer 222;

[0142] The width of the bottom of the dielectric material layer 223 is less than or equal to the width of the vibration cavity sidewall 24;

[0143] The width of the lead metal layer 224 is less than or equal to the width of the top of the dielectric material layer 223;

[0144] The dam electrode layer is above the non-vibration region.

[0145] The dielectric material layer covers the dam electrode layer and the first piezoelectric material layer, ensuring the insulation of the dam electrode layer; the width of the bottom of the dielectric material layer is less than or equal to the width of the vibration cavity sidewall, so that the vibration region of the diaphragm layer is exposed, avoiding the influence on the deformation performance of the vibration region.

[0146] In an optional embodiment, as shown in FIG. 2, the lead metal layer 224 of the dam 22 includes a through hole 2241; Figure 10

[0147] The lead metal of the dam 22 is grounded through the through hole 2241.

[0148] The through hole ensures that the lead metal of the dam structure is grounded, avoiding the generation of parasitic capacitance and ensuring the performance of the MEMS component.

[0149] In an optional embodiment, the movable part 21 includes a lower electrode layer, a second piezoelectric material layer and an upper electrode layer stacked in sequence above the diaphragm layer 211. The movable part can move up and down along the height direction of the support structure.

[0150] Specifically, the surface of the dam is covered with a passivation film.

[0151] For example, the height (i.e. thickness) of the dam electrode layer of the dam is the same as the height of the lower electrode layer of the movable part, the height of the first piezoelectric material layer of the dam is the same as the height of the second piezoelectric material layer of the movable part, the height of the metal lead layer of the dam is the same as the height of the upper electrode layer of the movable part, and the height of the passivation film of the dam is the same as the height of the passivation film of the support structure, so as to avoid introducing additional process steps and additional costs in the manufacturing process of the MEMS component. Those skilled in the art can adjust these layers according to the characteristics of their own products to meet the needs of the present disclosure.

[0152] ​Specifically, the thickness of each layer is as follows: upper electrode: 15 nm≤t≤100 nm; first piezoelectric material layer: 500 nm≤t≤3000 nm; second piezoelectric material layer: 500 nm≤t≤3000 nm; lower electrode: 80 nm≤t≤300 nm; dielectric material layer: 200 nm≤t≤2000 nm; and lead metal layer: 50 nm≤t≤1000 nm.

[0153] Embodiment 3

[0154] The present embodiment provides a liquid ejection head including the MEMS component in Embodiment 2.

[0155] The liquid ejection head cooperates with a piezoelectric inkjet printing technology to perform inkjet printing, and includes a piezoelectric actuator structure, a driving circuit for driving the piezoelectric actuator structure to operate, and a support structure.

[0156] The liquid ejection head of the present embodiment includes the MEMS component in Embodiment 2, and the MEMS component includes the support structure in Embodiment 1, which at least includes two first half-trench structures and one first through trench. The lower end of the sidewall of each first half-trench is bonded to the movable part of the piezoelectric actuator structure to form a first sealed cavity containing the corresponding movable part. The protection and power supply of the piezoelectric actuator structure are realized. Meanwhile, each adjacent first sealed cavity is isolated by the sidewall of the first half-trench. When the movable part in any first sealed cavity vibrates, it will not affect other first sealed cavities, thereby reducing the crosstalk between different movable parts, improving the reliability of the piezoelectric actuator structure, improving the structural stability of the MEMS component, reducing the manufacturing cost of the liquid ejection head, and improving the stability of the liquid ejection head.

[0157] Although the specific embodiments of the present disclosure are described above, those skilled in the art should understand that this is only an example. The protection scope of the present disclosure is defined by the appended claims. Those skilled in the art can make various changes or modifications to these embodiments without departing from the principles and essence of the present disclosure, and these changes and modifications all fall within the protection scope of the present disclosure.

Claims

1. A support structure for a MEMS component, characterized in that, The MEMS component includes a piezoelectric actuator structure and a drive circuit for driving the piezoelectric actuator structure to operate. The support structure includes at least two first semi-through groove structures and one first through groove, wherein the first through groove is located between the two first semi-through groove structures; The first through slot extends through the front and back of the support structure, and the first through slot is used to provide an electrical interconnection channel between the piezoelectric actuator structure and the drive circuit. The opening of the first semi-through groove structure is located on the opposite side of the support structure. Each first semi-through groove structure includes a first semi-through groove top wall, a first number of first semi-through groove side walls and a second number of first semi-through groove cavities. The second quantity is one less than the first quantity; The lower end of each of the first semi-channel sidewalls is bonded to the piezoelectric actuator structure to form a first sealed cavity containing the movable part of the piezoelectric actuator structure. The long side of the support structure is parallel to the short side of the piezoelectric actuator structure. The direction of the short side of the support structure is parallel to the direction of the long side of the piezoelectric actuator structure; The end corners of the first through groove are rounded, and the end corners of the first half through groove structure are rounded. And / or, the thickness of the first through groove is 300um-500um; And / or, the thickness of the first semi-through cavity is greater than 0 and less than or equal to 200 μm; And / or, the reverse side of the support structure is provided with glue-feeding holes; And / or, the first through slot includes a first channel and a second channel; The first channel corresponds to the front side of the support structure, and the second channel corresponds to the back side of the support structure; The dimensions of the first channel and the second channel may be the same or different; And / or, the surface of the support structure is covered with a passivation film; And / or, the lower end of the sidewall of the first semi-channel is bonded to the piezoelectric actuator structure via an adhesive layer.

2. A MEMS component, characterized in that, The MEMS component includes a piezoelectric actuator structure and a drive circuit for driving the piezoelectric actuator structure to operate. The MEMS component further includes a target support structure, which includes a first support structure; The first support structure is the support structure of the MEMS component as described in claim 1.

3. The MEMS component according to claim 2, characterized in that, The piezoelectric actuator structure includes a dam and a vibrating diaphragm layer; The vibrating diaphragm layer includes a vibrating region and a non-vibrating region; The movable part includes the vibration zone, and the dam is located above the non-vibration zone; The lower end of the sidewall of each first semi-channel of the first support structure is bonded to the top of the corresponding dam to form a first sealed cavity containing the movable part of the piezoelectric actuator structure.

4. The MEMS component according to claim 3, characterized in that, The piezoelectric actuator structure also includes a vibration cavity and a vibration cavity sidewall; The vibrating diaphragm layer covering the vibrating cavity forms the vibrating region, and the vibrating diaphragm layer covering the sidewall of the vibrating cavity forms the non-vibrating region.

5. The MEMS component according to claim 4, characterized in that, The target support structure includes a second support structure; The second support structure includes at least two second semi-through slot structures and a second through slot, wherein the second through slot is located between the two second semi-through slot structures; The second through slot extends through the front and back of the second support structure, and the second through slot is used to provide an electrical interconnection channel between the piezoelectric actuator structure and the drive circuit; The opening of the second semi-through groove structure is located on the opposite side of the second support structure. Each second semi-through groove structure includes a second semi-through groove top wall, a second semi-through groove side wall, and a second semi-through groove cavity. The lower end of the sidewall of the second semi-channel is bonded to the top of the dam to form a second sealed cavity containing the movable part of the piezoelectric actuator structure; Alternatively, the target support structure may include a third support structure; The third support structure includes at least two cover plates and a third through groove, wherein the third through groove is located between the two cover plates; The third through slot extends through the front and back of the third support structure, and the third through slot is used to provide an electrical interconnection channel between the piezoelectric actuator structure and the drive circuit. The height of the dam is greater than the height of the remaining area in the movable part excluding the vibration area. The lower end of the cover plate is bonded to the top of the dam to form a third sealed cavity containing the movable part of the piezoelectric actuator structure.

6. The MEMS component according to claim 4 or 5, characterized in that, The dam includes a dam electrode layer, and a first piezoelectric material layer, a dielectric material layer and a lead metal layer stacked sequentially above the dam electrode layer; The width of the dam electrode layer is greater than the width of the first piezoelectric material layer, and the dielectric material layer covers the dam electrode layer and the first piezoelectric material layer; The width of the bottom of the dielectric material layer is less than or equal to the width of the sidewall of the vibration cavity; The width of the lead metal layer is less than or equal to the width of the top of the dielectric material layer; The dam electrode layer is located above the non-vibration zone.

7. The MEMS component according to claim 6, characterized in that, The lead metal layer of the dam includes through holes; The lead metal of the dam is grounded through the through hole.

8. A liquid ejector head, characterized in that, The liquid ejector head includes a MEMS component as described in any one of claims 2-7.

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