Method for compensating the orientation of a crystal face of a single crystal material

Abstract

The application provides a compensation method for a crystal face orientation of a single crystal material, comprising: controlling an end face normal line of a crystal ingot to be collinear with a rotation axis of a rotating platform, performing three rotations, and the i-th rotation comprising: rotating the platform around the rotation axis to a predetermined angle ωi, rotating a ray emitter and a detector, and if a diffraction peak appears in a detector signal, determining an emission axis angle θi corresponding to an incident light vector Vi of the ray emitter; determining a crystal face normal line vector in an initial state based on the three predetermined angles ωi and the corresponding emission axis angles θi; determining a crystal face deviation angle and a deviation azimuth angle according to the initial crystal face normal line vector; and adjusting an inclined posture of the crystal ingot until the deviation angle is adjusted to a target angle. The method can effectively improve the efficiency of the compensation for the crystal face orientation of the single crystal material by replacing the global scanning in the related art with three non-coplanar measurements.

Description

Technical Field

[0001] This invention relates to the field of single-crystal materials, and more specifically to a method for compensating for the crystal orientation of single-crystal materials. Background Technology

[0002] In related technologies, single crystals are solids in which atoms, ions, or molecules are arranged in a strictly periodic manner in three-dimensional space. Their crystal lattice structure is continuous and without grain boundaries. This highly ordered arrangement gives single crystals properties such as homogeneity, anisotropy, symmetry, minimum internal energy, and maximum stability, making them widely used in semiconductor devices, laser technology, photocatalysis, and optical components. The crystal plane deviation angle directly affects the processing stress and material properties of the ingot, while the deviation azimuth angle indicates the direction of the crystal plane deviation. How to quickly and accurately obtain the crystal plane deviation angle and deviation azimuth angle, and thus compensate for the ingot deviation, is a crucial step in the single crystal material production process.

[0003] In related technologies, such as the rotation orientation method and the rocking curve method, the core of both is to find a unique special state that simultaneously satisfies the coplanarity of the crystal plane normal, the emitter axis, and the receiver axis by traversing different angle combinations, thereby determining the crystal plane deviation angle and deviation azimuth angle to compensate for the ingot. Both methods require a certain amount of traversal time and have the problem of low compensation efficiency. Summary of the Invention

[0004] To address the shortcomings of related technologies, this application provides a method for compensating for the crystal orientation of single-crystal materials, which can effectively improve the efficiency of crystal orientation compensation for single-crystal materials.

[0005] In a first aspect, this application provides a method for compensating for the crystal plane orientation of a single-crystal material, the method comprising:

[0006] By controlling the end face normal of the ingot to be collinear with the rotation axis of the rotating stage, the relative angle between the X-ray emitter and the detector is adjusted to 180°-2φ, and the X-ray emitter and the detector can rotate synchronously around the same rotation axis in a first specific plane; where φ is the Bragg angle of the crystal surface to be measured in the ingot.

[0007] Perform three rotation steps, wherein the i-th rotation step includes: rotating the rotating stage around the rotation axis to a predetermined angle ωi, rotating the X-ray emitter and detector, and if the detector signal shows a diffraction peak, determining the emission axis angle θi corresponding to the incident light vector Vi of the X-ray emitter.

[0008] Based on three predetermined angles ωi and the corresponding emission axis angles θi, the crystal plane normal vector of the ingot in the initial state is determined;

[0009] Determine the crystal plane deviation angle and deviation azimuth angle based on the crystal plane normal vector in the initial state;

[0010] Based on the crystal plane deviation angle and deviation azimuth angle, adjust the tilt attitude of the ingot until the crystal plane deviation angle is adjusted to the target angle.

[0011] In one embodiment, the crystal plane normal vector of the ingot in its initial state is determined based on three predetermined angles ωi and the corresponding emission axis angles θi, including:

[0012] Based on the rotation angle ωi of the rotating stage, the crystal plane normal vector Fi corresponding to the i-th rotation is determined through spatial rotation calculation;

[0013] Based on the emission axis angle θi, determine the incident light vector Vi corresponding to the i-th rotation;

[0014] Based on the crystal plane normal vector Fi and the corresponding incident light vector Vi corresponding to the three rotations, a system of equations is established, and the crystal plane normal vector of the ingot in the initial state is determined by the system of equations.

[0015] In one embodiment, a system of equations is established, and the crystal plane normal vector of the ingot in its initial state is determined using the system of equations, including:

[0016] Based on Bragg's law, a system of three equations is established; each equation is expressed as: during the i-th rotation, the angle between the incident light vector Vi and the crystal plane normal vector Fi satisfies the Bragg diffraction condition.

[0017] Solve the system of equations to obtain the numerical solution of the crystal plane normal vector in the initial state.

[0018] In one embodiment, the crystal plane normal vector Fi corresponding to the i-th rotation is obtained by rotating the crystal plane normal vector in the initial state around the Z-axis by an angle ωi.

[0019] The crystal plane normal vector Fi corresponding to the i-th rotation is obtained by the following formula: Fi=Rz(ωi)*F1, where Rz(ωi) represents the rotation operator around the Z-axis and F1 represents the crystal plane normal vector in the initial state.

[0020] In one embodiment, the Bragg diffraction condition is: the dot product of the incident light vector Vi and the crystal plane normal vector Fi is equal to sinφ; wherein the incident light vector Vi and the crystal plane normal vector Fi are both unit vectors.

[0021] In one embodiment, determining the crystal plane deviation angle and deviation azimuth angle based on the crystal plane normal vector in the initial state includes:

[0022] The initial crystal plane normal vector is (x,y,z), and the crystal plane deviation angle is the angle between the initial crystal plane normal vector and the Z-axis direction vector (0,0,1). The crystal plane deviation angle is obtained through the first objective equation: α=arccos(z), where α represents the crystal plane deviation angle.

[0023] The deviation azimuth angle is the angle between the projection vector (x,y,0) of the crystal plane normal vector in the initial state onto the second specific plane and the X-axis direction vector, which is obtained through the second objective equation; the second objective equation is: ρ=atan2d(y,x), where ρ represents the deviation azimuth angle.

[0024] In one embodiment, the rotation angles ω1, ω2, ω3 of the rotating stage are different in the three rotations; the incident light vector Vi is represented as (0, -cosθi, sinθi) in a spatial rectangular coordinate system.

[0025] Secondly, this application also provides a compensation system for the crystal orientation of a single-crystal material. The compensation system is used to implement the compensation method for the crystal orientation of a single-crystal material as described in the first aspect. The compensation system includes:

[0026] A rotating stage is used to support and drive an ingot to rotate about the normal to its end face;

[0027] A radiation emitter, used to emit radiation;

[0028] A detector used to receive X-ray diffraction signals;

[0029] The drive mechanism is used to drive the ray emitter and the detector to rotate synchronously around the X-axis and maintain the relative angle between them at 180°-2φ.

[0030] The control unit, which communicates with the rotating stage, drive mechanism and detector, is configured to: control the rotating stage and drive mechanism to perform rotation steps, and determine the emission axis angle θi corresponding to the appearance of a diffraction peak on the detector;

[0031] The control unit is also configured to: determine the crystal plane normal vector of the ingot in the initial state based on three predetermined angles ωi and the corresponding emission axis angles θi; determine the crystal plane deviation angle and deviation azimuth angle based on the crystal plane normal vector in the initial state; and adjust the tilt attitude of the ingot based on the crystal plane deviation angle and deviation azimuth angle until the crystal plane deviation angle is adjusted to the target angle.

[0032] Thirdly, this application also provides a compensation device for the crystal plane orientation of a single crystal material, the device comprising:

[0033] The control module is used to control the collinearity of the end face normal of the crystal ingot with the rotation axis of the rotating stage, adjust the relative angle between the X-ray emitter and the detector to 180°-2φ, and enable the X-ray emitter and the detector to rotate synchronously around the same axis in a first specific plane; where φ is the Bragg angle of the crystal surface to be measured on the crystal ingot.

[0034] The rotation operation module is used to perform three rotation steps, wherein the i-th rotation step includes: rotating the rotating stage around the rotation axis to a predetermined angle ωi, rotating the X-ray emitter and detector, and if the detector signal shows a diffraction peak, determining the emission axis angle θi corresponding to the incident light vector Vi of the X-ray emitter.

[0035] The calculation module is used to determine the crystal plane normal vector of the ingot in the initial state based on three predetermined angles ωi and the corresponding emission axis angle θi; it is also used to determine the crystal plane deviation angle and deviation azimuth angle based on the crystal plane normal vector in the initial state.

[0036] The adjustment module is used to adjust the tilting attitude of the crystal ingot according to the crystal plane deviation angle and the deviation azimuth angle until the crystal plane deviation angle is adjusted to the target angle.

[0037] Fourthly, this application also provides a computer-readable storage medium having a computer program stored thereon, wherein the computer program, when executed by a processor, implements the method for compensating the crystal plane orientation of a single-crystal material according to the first aspect.

[0038] The above-described compensation method for the crystal orientation of single-crystal materials involves controlling the collinearity of the normal to the end face of the crystal ingot with the rotation axis of the rotating stage, adjusting the relative angle between the X-ray emitter and the detector to 180°-2φ (φ being the Bragg angle of the crystal face to be measured), and ensuring that the X-ray emitter and the detector can rotate synchronously around the same axis in a first specific plane. Then, three rotation measurement steps are performed. In the i-th rotation step, the rotating stage is rotated around the rotation axis to a predetermined angle ωi, and the X-ray emitter and detector are rotated. When the detector receives the incident light signal from the reflected X-ray emitter and a diffraction peak appears, the emission axis angle θi of the corresponding incident light emitted by the X-ray emitter is recorded. Based on the three predetermined angles ωi and the corresponding emission axis angles θi, the crystal face normal vector of the crystal ingot in its initial state is calculated using spatial geometric relationships. The crystal face deviation angle and deviation azimuth angle are calculated based on the normal vector in the initial state. The tilt attitude of the crystal ingot is adjusted based on the crystal face deviation angle and deviation azimuth angle until the crystal face deviation angle is adjusted to the target angle. This method replaces the global scan in related techniques with three non-coplanar measurements, which can effectively improve the efficiency of crystal orientation compensation for single-crystal materials. Attached Figure Description

[0039] Figure 1 This is a flowchart of a method for compensating for the crystal orientation of a single-crystal material in one embodiment;

[0040] Figure 2 This is a schematic diagram illustrating crystal plane deviation in one embodiment of the crystal ingot;

[0041] Figure 3 This is a flowchart illustrating the determination of the crystal plane normal vector of an ingot in its initial state, as described in one embodiment.

[0042] Figure 4 This is a schematic diagram of the crystal plane deviation after the first rotation step in one embodiment;

[0043] Figure 5 This is a schematic diagram of the crystal plane deviation after the second rotation step in one embodiment;

[0044] Figure 6 This is a schematic diagram of the crystal plane deviation after the third rotation step in one embodiment;

[0045] Figure 7 This is a structural diagram of a compensation system for the crystal orientation of a single-crystal material in one embodiment;

[0046] Figure 8 This is a structural diagram of a compensation device for the crystal orientation of a single crystal material in one embodiment. Detailed Implementation

[0047] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0048] It should be noted that the terms "first," "second," and similar terms used in this application specification and claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, "a" or "one," and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. "A plurality" or "several" indicates at least two. Unless otherwise stated, terms such as "front and back," "left and right," "up and down," and similar terms are for illustrative purposes only and are not limited to a single location or spatial orientation. Terms such as "connected" or "linked" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect.

[0049] The singular forms “a,” “the,” and “the” used in this application specification and appended claims may also include one or more, unless the context clearly indicates otherwise.

[0050] This application provides a method for compensating for the crystal plane orientation of single-crystal materials, such as... Figure 1 As shown, the method includes the following steps:

[0051] Step 101: Control the normal of the end face of the crystal ingot to be collinear with the rotation axis of the rotating stage, adjust the relative angle between the X-ray emitter and the detector to 180°-2φ, and enable the X-ray emitter and the detector to rotate synchronously around the same rotation axis in a first specific plane; where φ is the Bragg angle of the crystal surface to be measured on the crystal ingot.

[0052] Specifically, such as Figure 2 As shown, the normal OG of the ingot end face is collinear with the rotation axis (Z-axis) of the rotating stage, ensuring that the rotation axis of the rotating stage is aligned with the geometric axis of the ingot. The relative angle between the X-ray emitter and the detector is pre-adjusted and fixed at 180° - 2φ (where φ is the known Bragg angle of the crystal surface to be measured). The X-ray emitter continuously emits incident light, which is reflected after passing through the crystal surface to be measured.

[0053] Setting the relative angle to 180°-2φ ensures that, under the Bragg condition, the incident light signal after reflection of the diffraction peak can be received by the detector. It should be noted that the ray emitter and detector need to be fixed on a first specific plane so that the ray emitter and detector can rotate synchronously around the same axis (X-axis) within the first specific plane (i.e., the YOZ plane).

[0054] Step 102: Perform three rotation steps, wherein the i-th rotation step includes: rotating the rotating stage around the rotation axis to a predetermined angle ωi, rotating the X-ray emitter and detector, and if the detector signal shows a diffraction peak, determining the emission axis angle θi corresponding to the incident light vector Vi of the X-ray emitter.

[0055] Specifically, the rotating stage is driven to rotate around its rotation axis (Z-axis) to a predetermined angle ωi (i=1, 2, and 3). Here, ω1 is the predetermined angle reached for the first rotation, typically defaulting to an initial state of 0°; ω2 is the predetermined angle reached for the second rotation; and ω3 is the predetermined angle reached for the third rotation. It should be noted that ω2 and ω3 are any two different, non-zero angles.

[0056] Furthermore, with the rotating stage rotated to an angle ωi (i=1, 2, and 3) and the stage stationary, the ray emitter and detector are rotated around the X-axis in the YOZ plane. During rotation, the ray emitter continuously emits incident light, and the detector continuously receives and detects the incident light signal reflected from the crystal surface under test of the ingot. When a diffraction peak appears in the reflected incident light signal, it indicates that the incident light emitted by the ray emitter satisfies the Bragg diffraction condition. At this time, the emission axis angle θi of the incident light corresponding to the diffraction peak point is recorded. Furthermore, the incident light vector Vi of the ray emitter can be determined based on the emission axis angle θi of the incident light.

[0057] Step 103: Based on the three predetermined angles ωi and the corresponding emission axis angles θi, determine the crystal plane normal vector of the ingot in the initial state.

[0058] Specifically, the emission axis angle θi can determine the incident light vector Vi of the X-ray emitter when diffraction occurs. Furthermore, by establishing a projection mapping relationship between the diffraction signal and the crystal plane normal, the measurement data (ωi, θi) can be converted into spatial constraints for the crystal plane normal vector. Using a data fitting algorithm, the spatial vector solution satisfying the spatial constraints is obtained, thus realizing the conversion from diffraction signal to spatial vector.

[0059] Alternatively, by using data (ωi, θi) at three different rotation angles, spatial geometry principles and vector operation techniques are applied to fuse the measured predetermined rotation angle ωi of the stage with the corresponding emission axis angle θi, and the spatial orientation of the crystal plane normal is calculated through coordinate transformation and vector analysis.

[0060] Step 104: Determine the crystal plane deviation angle and deviation azimuth angle based on the crystal plane normal vector in the initial state.

[0061] Specifically, such as Figure 2 As shown, based on the initial state of the crystal plane normal vector F1 and the Z-axis unit vector representing the reference direction, the angle between the two vectors can be calculated to obtain the crystal plane deviation angle α of the crystal plane to be measured relative to the end face of the crystal ingot. The initial state of the crystal plane normal vector F1 in the three-dimensional coordinate system is projected onto the horizontal reference plane (XOY plane) to obtain the projection vector F'. By calculating the angle between the projection vector F' and the X-axis of the reference coordinate system, the deviation azimuth angle ρ can be obtained.

[0062] The crystal plane deviation angle α represents the tilt magnitude between the crystal plane to be measured and the end face of the ingot, and its value reflects the angle at which the crystal plane needs to be corrected. The deviation azimuth angle ρ describes the specific direction of the tilt of the crystal plane to be measured on the horizontal plane, that is, it indicates in which direction the tilt compensation of the ingot should be implemented.

[0063] Step 105: Adjust the tilt of the ingot according to the crystal plane deviation angle and the deviation azimuth angle until the crystal plane deviation angle is adjusted to the target angle.

[0064] Specifically, based on the measured and calculated crystal plane deviation angle and deviation azimuth angle, the crystal plane deviation angle and deviation azimuth angle are converted into control commands for adjusting each spatial coordinate axis through coordinate transformation; further, based on the control commands, the adjustment frame is driven to perform the corresponding tilting action of each coordinate axis, so that the crystal plane normal in the initial state moves closer to the Z-axis direction, until the crystal plane deviation angle is adjusted to the preset target angle, where the target angle can be 0 degrees, 4 degrees or any other target angle.

[0065] In this embodiment, the method controls the collinearity of the ingot end face normal with the rotation axis of the rotating stage, adjusts the relative angle between the X-ray emitter and the detector to 180°-2φ (φ is the Bragg angle of the crystal surface to be measured), and ensures that the X-ray emitter and the detector can rotate synchronously around the same rotation axis in a first specific plane. Then, three rotation measurement steps are performed. In the i-th rotation step, the rotating stage is rotated around the rotation axis to a predetermined angle ωi, and the X-ray emitter and the detector are rotated. When the detector receives the incident light signal from the reflected X-ray emitter emission point and a diffraction peak appears, the emission axis angle θi of the incident light emitted by the corresponding X-ray emitter is recorded. Based on the three predetermined angles ωi and the corresponding emission axis angles θi, the crystal surface normal vector of the ingot in the initial state is calculated and determined through spatial geometric relationships. The crystal surface deviation angle and deviation azimuth angle are calculated based on the normal vector in the initial state. The tilt attitude of the ingot is adjusted based on the crystal surface deviation angle and deviation azimuth angle until the crystal surface deviation angle is adjusted to the target angle. This method replaces the global scan in related techniques with three non-coplanar measurements, achieving rapid and accurate determination and compensation of crystal orientation, thus improving compensation efficiency and calibration accuracy.

[0066] In one embodiment, such as Figure 3 As shown, based on three predetermined angles ωi and the corresponding emission axis angle θi, the crystal plane normal vector of the ingot in its initial state is determined, including the following steps:

[0067] Step 301: Based on the rotation angle ωi of the rotating stage, determine the crystal plane normal vector Fi corresponding to the i-th rotation through spatial rotation calculation.

[0068] It should be noted that for any vector k1 in the spatial coordinate system, the new vector k2 after rotating it around the Z-axis by n degrees is: k2=Rz(n)*k1.

[0069] Where Rz(n) is the rotation operator along the Z-axis, and its calculation formula is as follows:

[0070] .

[0071] Furthermore, such as Figure 4 As shown, in the initial state (rotation angle ω1), the normal vector of the crystal plane to be measured in the ingot is set to F1=(x,y,z). Figure 5 As shown, when the rotating stage rotates the ingot around its rotation axis (Z-axis) to an angle of ω2, the direction of the crystal plane normal vector in space also changes to F2. Based on the above calculation formula, the crystal plane normal vector at angle ω2 is: F2 = Rz(ω2) * F1. Similarly, as... Figure 6As shown, when the rotating stage drives the crystal ingot to rotate around its rotation axis (Z-axis) to an angle of ω3, the direction of the crystal plane normal vector in space also changes to F3. Based on the above calculation formula, the crystal plane normal vector at the angle of ω3 is: F3=Rz(ω3)*F1.

[0072] Step 302: Determine the incident light vector Vi corresponding to the i-th rotation based on the emission axis angle θi.

[0073] Specifically, such as Figure 4 As shown, when the rotating stage rotates to a predetermined angle ω1, the emission axis angle of the incident light corresponding to the diffraction peak point is θ1; Figure 5 As shown, when the rotating stage rotates to a predetermined angle ω2, the emission axis angle of the incident light corresponding to the diffraction peak point is θ2; Figure 6 As shown, when the rotating stage is rotated to a predetermined angle ω3, the emission axis angle of the incident light corresponding to the diffraction peak point is θ3.

[0074] During the i-th rotation, since the ray emitter and detector are mounted in the YOZ plane and can rotate synchronously around the X-axis, when the incident light signal detected by the detector after reflection from the crystal surface under test of the ingot shows a diffraction peak, the emission axis angle θi of the incident light at this time is the angle between the direction of the incident light vector Vi and the negative direction of the Y-axis of the coordinate system. Through three-dimensional spatial analytical geometry calculation, the expression of the incident light vector at this time can be obtained: Vi=(0,-cosθi,sinθi).

[0075] Furthermore, it can be obtained that the incident light vector corresponding to the first rotation (predetermined angle ω1) is V1=(0,-cosθ1,sinθ1); the incident light vector corresponding to the second rotation (predetermined angle ω2) is V2=(0,-cosθ2,sinθ2); and the incident light vector corresponding to the third rotation (predetermined angle ω3) is V3=(0,-cosθ3,sinθ3).

[0076] Step 303: Based on the crystal plane normal vector Fi and the corresponding incident light vector Vi corresponding to the three rotations, establish a system of equations, and determine the crystal plane normal vector of the ingot in the initial state through the system of equations.

[0077] Specifically, based on the physical nature of Bragg diffraction, each time the detector detects a diffraction peak in the reflected incident light signal, the angle between the incident light vector Vi and the corresponding crystal plane normal vector Fi satisfies the geometric relationship (90°-φ). That is, the dot product equation of the incident light vector Vi and the corresponding crystal plane normal vector Fi satisfies the following formula:

[0078] Vi·Fi=cos(90°-φ)=sinφ.

[0079] Furthermore, we can obtain the following vector equation: the dot product of the incident light vector V1 after the first rotation and the corresponding crystal plane normal vector F1 satisfies the following equation: V1·F1=sinφ. Similarly, the dot product of the incident light vector V2 after the second rotation and the corresponding crystal plane normal vector F2 satisfies the following equation: V2·Rz(ω2)*F1=sinφ. The dot product of the incident light vector V3 after the third rotation and the corresponding crystal plane normal vector F3 satisfies the following equation: V3·Rz(ω3)*F1=sinφ. It should be noted that both the incident light vector Vi and its corresponding crystal plane normal vector Fi are unit vectors.

[0080] Furthermore, the normal vector in all three vector equations is F1. Solving these three equations simultaneously yields a system of three linear equations in three variables, with three components (x, y, z) of F1. This system of three linear equations is as follows:

[0081] .

[0082] Since the rotation matrix Rz(ωi) and the incident light vector Vi can both be directly calculated from the measured values ​​(ωi,θi), and the system of equations contains three independent equations with exactly three unknowns, the crystal plane normal vector F1=(x,y,z) in the initial state can be solved by numerical calculation.

[0083] In one embodiment, determining the crystal plane deviation angle and deviation azimuth angle based on the crystal plane normal vector in the initial state includes:

[0084] The initial crystal plane normal vector is (x,y,z), and the crystal plane deviation angle is the angle between the initial crystal plane normal vector and the Z-axis direction vector (0,0,1). The crystal plane deviation angle is obtained through the first objective equation: α=arccos(z), where α represents the crystal plane deviation angle.

[0085] The deviation azimuth angle is the angle between the projection vector (x,y,0) of the crystal plane normal vector in the initial state onto the second specific plane and the X-axis direction vector, which is obtained through the second objective equation; the second objective equation is: ρ=atan2d(y,x), where ρ represents the deviation azimuth angle.

[0086] Specifically, the calculation of the crystal plane deviation angle α is based on the spatial geometric relationship between the initial crystal plane normal unit vector F1=(x,y,z) and the Z-axis vector (0,0,1), and its value is determined by the first objective equation α=arccos(z). It should be noted that the derivation of this formula originates from the unit vector dot product operation: cos(α)=F1·(0,0,1)=z, therefore the inverse cosine of the angle is the deviation angle.

[0087] For example, when the measured normal vector F1=(0.1,0.2,0.974) in the initial state is obtained, its z-component 0.974 is extracted and substituted into the first objective equation to calculate the crystal plane deviation angle α=arccos(0.974)≈13.1°. This result indicates that there is a spatial angle of 13.1 degrees between the crystal plane normal and the z-axis in the initial state. It should be noted that the closer the z value is to 1, the smaller the deviation angle (when z=1, α=0° indicates perfect alignment).

[0088] The azimuth deviation is the angle between the projection vector F'=(x,y,0) of the initial crystal plane normal vector F1=(x,y,z) onto the XOY horizontal plane and the positive X-axis direction (1,0,0). It is solved using the second objective equation ρ=atan2d(y,x). It should be noted that this four-quadrant arctangent function can automatically determine the quadrant of the vector based on the signs of the projection components x and y, thus outputting the azimuth angle in the range of 0°-360°. For example, if the calculated initial crystal plane normal vector is F1=(0.3,0.4,0.866), substituting it into the second objective equation yields ρ=atan2d(0.4,0.3)≈53.1°, indicating that the azimuth deviation of the crystal plane is 53.1°.

[0089] Furthermore, after solving for the crystal plane deviation angle α and deviation azimuth angle ρ, the tilt attitude of the crystal plane can be uniquely determined, and tilt correction compensation can be performed based on this tilt attitude. For example, the crystal ingot can be rotated ρ degrees in the positive direction according to the right-hand rule around the crystal plane normal, and then the crystal ingot can be rotated α-γ degrees in the reverse direction according to the right-hand rule around the Y-axis to correct the crystal plane deviation angle to γ ​​degrees, where γ is the target angle.

[0090] Based on the same concept, such as Figure 7 As shown, this application also provides a compensation system for the crystal orientation of a single crystal material. The compensation system is used to implement the above-mentioned compensation method for the crystal orientation of a single crystal material. The system includes: a rotating stage 701, a ray emitter 702, a detector 703, a drive mechanism 704, and a control unit 705.

[0091] The rotating stage 701 is used to support and drive the crystal ingot to rotate about the normal of its end face;

[0092] The ray emitter 702 is used to emit rays;

[0093] Detector 703 is used to receive X-ray diffraction signals;

[0094] The drive mechanism 704 is used to drive the ray emitter 702 and the detector to rotate synchronously around the X-axis of 703, and to maintain the relative angle between them at 180°-2φ.

[0095] The control unit 705 communicates with the rotating stage 701, the drive mechanism 704 and the detector 703, and is configured to: control the rotating stage 701 and the drive mechanism 704 to perform rotation steps, and determine the emission axis angle θi corresponding to the appearance of the diffraction peak in the detector 703;

[0096] The control unit 705 is also configured to: determine the crystal plane normal vector of the ingot in the initial state based on three predetermined angles ωi and the corresponding emission axis angles θi; determine the crystal plane deviation angle and deviation azimuth angle based on the crystal plane normal vector in the initial state; and adjust the tilt attitude of the ingot based on the crystal plane deviation angle and deviation azimuth angle until the crystal plane deviation angle is adjusted to the target angle.

[0097] Specifically, the control unit 705 can rotate the rotating stage 701 three times, and the predetermined angle ωi of the rotating stage 701 is different each time. Similarly, the control unit 705 can also rotate the drive mechanism 704. The drive mechanism 704 can drive the ray emitter 702 and the detector 703 to rotate synchronously around the X-axis, and the relative angle between the ray emitter 702 and the detector 703 is 180°-2φ. When the ray emitter 702 and the detector 703 rotate synchronously around the X-axis, the ray emitter 702 continuously emits incident light, and the detector 703 continuously receives and detects the incident light signal reflected by the crystal surface to be tested on the ingot. When the detector 703 detects a diffraction peak in the reflected incident light signal, it records the emission axis angle θi of the incident light at this time. The emission axis angle θi of the incident light recorded by the detector 703 can be transmitted to the control unit 705.

[0098] Based on the same concept, such as Figure 8 As shown, this application also provides a compensation device for the crystal plane orientation of a single crystal material, the device comprising:

[0099] The control module 801 is used to control the end face normal of the crystal ingot to be collinear with the rotation axis of the rotating stage, adjust the relative angle between the X-ray emitter and the detector to 180°-2φ, and enable the X-ray emitter and the detector to rotate synchronously around the same rotation axis in a first specific plane; where φ is the Bragg angle of the crystal surface to be measured in the crystal ingot.

[0100] The rotation operation module 802 is used to perform three rotation steps, wherein the i-th rotation step includes: rotating the rotating stage around the rotation axis to a predetermined angle ωi, rotating the X-ray emitter and detector, and if the detector signal shows a diffraction peak, determining the emission axis angle θi corresponding to the incident light vector Vi of the X-ray emitter.

[0101] The calculation module 803 is used to determine the crystal plane normal vector of the ingot in the initial state based on three predetermined angles ωi and the corresponding emission axis angles θi; it is also used to determine the crystal plane deviation angle and deviation azimuth angle based on the crystal plane normal vector in the initial state.

[0102] The adjustment module 804 is used to adjust the tilting attitude of the crystal ingot according to the crystal plane deviation angle and the deviation azimuth angle until the crystal plane deviation angle is adjusted to the target angle.

[0103] In one embodiment, the calculation module 803 determines the crystal surface normal vector of the ingot in its initial state based on three predetermined angles ωi and the corresponding emission axis angles θi. Specifically, it is used to: determine the crystal surface normal vector Fi corresponding to the i-th rotation through spatial rotation calculation based on the rotation angle ωi of the rotating stage; determine the incident light vector Vi corresponding to the i-th rotation based on the emission axis angle θi; establish a system of equations based on the crystal surface normal vectors Fi and the corresponding incident light vectors Vi corresponding to the three rotations, and determine the crystal surface normal vector of the ingot in its initial state through the system of equations.

[0104] In one embodiment, the calculation module 803 establishes a set of equations and determines the crystal plane normal vector of the ingot in the initial state through the set of equations. Specifically, it is used to: establish a set of equations consisting of three equations based on Bragg's law; wherein each equation is expressed as: at the i-th rotation, the angle between the incident light vector Vi and the crystal plane normal vector Fi satisfies the Bragg diffraction condition; solve the set of equations to obtain the numerical solution of the crystal plane normal vector in the initial state.

[0105] In one embodiment, the calculation module 803 calculates the crystal plane normal vector Fi corresponding to the i-th rotation by rotating the crystal plane normal vector in the initial state around the Z-axis by an angle ωi; wherein, the crystal plane normal vector Fi corresponding to the i-th rotation is obtained by the following calculation formula: Fi=Rz(ωi)*F1, where Rz(ωi) represents the rotation operator around the Z-axis and F1 represents the crystal plane normal vector in the initial state.

[0106] In one embodiment, the calculation module 803 calculates the Bragg diffraction condition as follows: the dot product of the incident light vector Vi and the crystal plane normal vector Fi is equal to sinφ; wherein, the incident light vector Vi and the crystal plane normal vector Fi are both unit vectors.

[0107] In one embodiment, the calculation module 803 determines the crystal plane deviation angle and deviation azimuth angle based on the crystal plane normal vector in the initial state. Specifically, the crystal plane normal vector in the initial state is (x,y,z), and the crystal plane deviation angle is the angle between the crystal plane normal vector in the initial state and the Z-axis direction vector (0,0,1). The crystal plane deviation angle is obtained through a first objective equation. The first objective equation is: α=arccos(z), where α represents the crystal plane deviation angle. The deviation azimuth angle is the angle between the projection vector (x,y,0) of the crystal plane normal vector in the initial state onto a second specific plane and the X-axis direction vector. It is obtained through a second objective equation. The second objective equation is: ρ=atan2d(y,x), where ρ represents the deviation azimuth angle.

[0108] In one embodiment, the rotation angles ω1, ω2, and ω3 of the rotating stage in the three rotations of the rotation operation module 802 are all different; the incident light vector Vi is represented as (0, -cosθi, sinθi) in the spatial rectangular coordinate system.

[0109] Based on the same concept, this application also provides a computer-readable storage medium storing a computer program thereon, which, when executed by a processor, implements the steps of the above-described method for compensating for the crystal orientation of single-crystal materials.

[0110] Computer-readable storage media can be any available medium that a computer can access, or a data storage device such as a server or data center that integrates one or more available media. Available media can be magnetic media (e.g., floppy disks, hard disks, magnetic tapes), optical media (e.g., DVDs), or solid-state drives (SSDs), etc. A computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, all or part of the processes or functions according to embodiments of this application are created.

[0111] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

Claims

1. A method for compensating for the crystal plane orientation of a single-crystal material, characterized in that, The method includes: The normal to the end face of the crystal ingot is controlled to be collinear with the rotation axis of the rotating stage, and the relative angle between the X-ray emitter and the detector is adjusted to 180°-2φ, enabling the X-ray emitter and the detector to rotate synchronously around the same axis in a first specific plane; where φ is the Bragg angle of the crystal surface to be measured on the crystal ingot. Perform three rotation steps, wherein the i-th rotation step includes: rotating the rotating stage around the rotation axis to a predetermined angle ωi, rotating the ray emitter and the detector, and if the signal of the detector shows a diffraction peak, determining the emission axis angle θi corresponding to the incident light vector Vi of the ray emitter; Based on the three predetermined angles ωi and the corresponding emission axis angles θi, the crystal plane normal vector of the ingot in the initial state is determined; Based on the crystal plane normal vector in the initial state, determine the crystal plane deviation angle and deviation azimuth angle; Based on the crystal plane deviation angle and the deviation azimuth angle, adjust the tilt attitude of the crystal ingot until the crystal plane deviation angle is adjusted to the target angle; in, ω1 is the predetermined angle reached during the first rotation, ω2 is the predetermined angle reached during the second rotation, and ω3 is the predetermined angle reached during the third rotation. ω1 is 0°, and ω2 and ω3 are any two non-zero angles. ω1, ω2, and ω3 are all different.

2. The method for compensating for the crystal plane orientation of a single-crystal material according to claim 1, characterized in that, Based on the three predetermined angles ωi and the corresponding emission axis angles θi, the crystal plane normal vector of the ingot in its initial state is determined, including: Based on the rotation angle ωi of the rotating stage, the crystal plane normal vector Fi corresponding to the i-th rotation is determined by spatial rotation calculation; Based on the emission axis angle θi, determine the incident light vector Vi corresponding to the i-th rotation; Based on the crystal plane normal vector Fi and the corresponding incident light vector Vi corresponding to the three rotations, a set of equations is established, and the crystal plane normal vector of the ingot in the initial state is determined by the set of equations.

3. The method for compensating for the crystal plane orientation of a single-crystal material according to claim 2, characterized in that, Establish a system of equations, and determine the crystal plane normal vector of the ingot in its initial state using the system of equations, including: Based on Bragg's law, a system of three equations is established; each equation is expressed as: during the i-th rotation, the angle between the incident light vector Vi and the crystal plane normal vector Fi satisfies the Bragg diffraction condition. Solve the system of equations to obtain the numerical solution of the crystal plane normal vector in the initial state.

4. The method for compensating for the crystal plane orientation of a single-crystal material according to claim 2, characterized in that, The crystal plane normal vector Fi corresponding to the i-th rotation is obtained by rotating the crystal plane normal vector in the initial state around the Z-axis by an angle ωi. The crystal plane normal vector Fi corresponding to the i-th rotation is obtained by the following formula: Fi=Rz(ωi)*F1, where Rz(ωi) represents the rotation operator around the Z-axis and F1 represents the crystal plane normal vector in the initial state.

5. The method for compensating for the crystal plane orientation of a single-crystal material according to claim 3, characterized in that, The Bragg diffraction condition is: the dot product of the incident light vector Vi and the crystal plane normal vector Fi is equal to sinφ; wherein, the incident light vector Vi and the crystal plane normal vector Fi are both unit vectors.

6. The method for compensating for the crystal plane orientation of a single-crystal material according to claim 1, characterized in that, Based on the crystal plane normal vector in the initial state, determine the crystal plane deviation angle and deviation azimuth angle, including: The crystal plane normal vector in the initial state is (x,y,z), and the crystal plane deviation angle is the angle between the crystal plane normal vector in the initial state and the Z-axis direction vector (0,0,1). The crystal plane deviation angle is obtained through the first objective equation; the first objective equation is: α=arccos(z), where α represents the crystal plane deviation angle. The deviation azimuth angle is the angle between the projection vector (x,y,0) of the crystal plane normal vector in the initial state onto the second specific plane and the X-axis direction vector, obtained through the second objective equation; the second objective equation is: ρ=atan2d(y,x), where ρ represents the deviation azimuth angle.

7. The method for compensating for the crystal plane orientation of a single-crystal material according to claim 1, characterized in that, The incident light vector Vi is represented as (0, -cosθi, sinθi) in a spatial rectangular coordinate system.

8. A compensation system for the crystal plane orientation of a single-crystal material, said compensation system being used to implement the compensation method for the crystal plane orientation of a single-crystal material as described in any one of claims 1 to 7, characterized in that, The compensation system includes: A rotating stage is used to support and drive an ingot to rotate about the normal to its end face; A radiation emitter, used to emit radiation; A detector used to receive X-ray diffraction signals; A drive mechanism is used to drive the ray emitter and the detector to rotate synchronously around the X-axis and maintain the relative angle between them at 180°-2φ. The control unit, which communicates with the rotating stage, the drive mechanism, and the detector, is configured to: control the rotating stage and the drive mechanism to perform rotation steps, and determine the emission axis angle θi corresponding to when the detector exhibits a diffraction peak; The control unit is further configured to: determine the crystal surface normal vector of the ingot in the initial state based on three predetermined angles ωi and the corresponding emission axis angle θi; determine the crystal surface deviation angle and deviation azimuth angle based on the crystal surface normal vector in the initial state; and adjust the tilting attitude of the ingot based on the crystal surface deviation angle and the deviation azimuth angle until the crystal surface deviation angle is adjusted to the target angle.

9. A compensation device for the crystal plane orientation of a single crystal material, characterized in that, The device includes: The control module is used to control the collinearity of the end face normal of the crystal ingot with the rotation axis of the rotating stage, adjust the relative angle between the X-ray emitter and the detector to 180°-2φ, and enable the X-ray emitter and the detector to rotate synchronously around the same axis in a first specific plane; wherein, φ is the Bragg angle of the crystal surface to be measured of the crystal ingot. The rotation operation module is used to perform three rotation steps, wherein the i-th rotation step includes: rotating the rotating stage around the rotation axis to a predetermined angle ωi, rotating the ray emitter and the detector, and if the signal of the detector shows a diffraction peak, determining the emission axis angle θi corresponding to the incident light vector Vi of the ray emitter. The calculation module is used to determine the crystal plane normal vector of the ingot in the initial state based on the three predetermined angles ωi and the corresponding emission axis angles θi; it is also used to determine the crystal plane deviation angle and deviation azimuth angle according to the crystal plane normal vector in the initial state. The adjustment module is used to adjust the tilting posture of the crystal ingot according to the crystal plane deviation angle and the deviation azimuth angle until the crystal plane deviation angle is adjusted to the target angle; in, ω1 is the predetermined angle reached during the first rotation, ω2 is the predetermined angle reached during the second rotation, and ω3 is the predetermined angle reached during the third rotation. ω1 is 0°, and ω2 and ω3 are any two non-zero angles. ω1, ω2, and ω3 are all different.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 7.

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